Photoresist stripping liquid as well as preparation method and application thereof

Abstract

The invention belongs to the technical field of photoresist, and particularly relates to photoresist stripping liquid as well as a preparation method and application thereof. The photoresist stripping liquid comprises the following components in percentage by mass: 20%-40% of organic alcohol amine, 10%-30% of organic alcohol ether, 5%-10% of a chitosan derivative, 1%-5% of imidazole silane, 0.5%-2% of a guanidine compound, 0.1%-1% of a polyhydric alcohol type nonionic surfactant and the balance of water, wherein the sum of the mass percentages is 100%; the chitosan derivative, the imidazole silane and the guanidine compound have a synergistic effect, so that the photoresist residue is prevented from being agglomerated in a liquid phase, the after-tack phenomenon of the photoresist is effectively prevented, and the metal substrate is not corroded; the photoresist stripping liquid disclosed by the invention has a good application prospect in the manufacturing process of the display panel.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of photoresist and particularly relates to a photoresist stripping solution and a preparation method and application thereof. BACKGROUND

[0002] In the manufacturing process of a display panel, a photoetching process has been widely used to form certain patterns on a substrate. The photoetching process includes a series of processes: uniformly applying a photoresist to the surface of the substrate, then transferring preset pattern information to the photoresist layer through an exposure process, after the exposure is completed, developing treatment is performed to remove the unexposed (or exposed) photoresist part, and finally a photoresist mask consistent with the target pattern is formed on the substrate. With the photoresist mask as a protective barrier, the conductive metal film, insulating film and other functional layers on the surface of the substrate are subjected to dry or wet etching, so that the functional layers are etched and removed only in the area without photoresist coverage, thereby forming a fine circuit pattern on the substrate; after the circuit pattern transfer is completed, the photoresist layer as a mask has lost its function and needs to be completely removed from the surface of the substrate by a photoresist stripping solution to avoid the impact of residual photoresist on subsequent processes or the performance of the display panel.

[0003] At present, CN120491407A discloses a stripping solution composition and a preparation method and application thereof. The stripping solution composition includes an organic base, a diol ether solvent, a ketal solvent, a nylon acid methyl ester, a protective agent, a β-cyclodextrin derivative and pure water. The organic base includes a steric alcohol amine and a bicyclic guanidine compound. The combination of the steric alcohol amine and the bicyclic guanidine compound is used for photoresist, which can effectively destroy the macromolecular structure of the photoresist. The diol ether solvent, the ketal solvent and the nylon acid methyl ester are matched to provide better dissolution and stripping effect. The β-cyclodextrin derivative can not only wet the photoresist and increase the compatibility of the photoresist decomposition particles, but also can prolong the storage stability of the stripping solution. However, the stripping solution can only remove most of the photoresist, and still has a small amount of dissolved photoresist adsorbed on the surface of the substrate, which cannot be completely removed. In the subsequent water washing process, the dissolved photoresist is quickly diluted, and after losing the dissolved state, it is re-precipitated and sticks back to the surface of the substrate. The sticking of the photoresist will cause the substrate quality to be unqualified, and finally reduce the yield of production.

[0004] Based on the above statement, the application provides a photoresist stripping solution and a preparation method and application thereof. SUMMARY

[0005] The purpose of the application is to provide a photoresist stripping solution and a preparation method and application thereof to solve the problem of photoresist sticking.

[0006] In a first aspect, the application provides a photoresist stripping solution, which adopts the following technical scheme: The photoresist stripping solution comprises, with the sum of the mass percentages being 100%, 20%-40% of an organic alcohol amine, 10%-30% of an organic alcohol ether, 5%-10% of a chitosan derivative, 1%-5% of an imidazole silane, 0.5%-2% of a guanidines compound, 0.1%-1% of a polyhydric alcohol type non-ionic surfactant, and the balance of water.

[0007] Preferably, the mass percentage of the organic alcohol amine is 25%-35%; and / or, the mass percentage of the organic alcohol ether is 15%-25%; and / or, the mass percentage of the chitosan derivative is 7%-9%; and / or, the mass percentage of the imidazole silane is 2%-4%; and / or, the mass percentage of the guanidines compound is 1%-1.5%; and / or, the mass percentage of the polyhydric alcohol type non-ionic surfactant is 0.3%-0.8%.

[0008] Preferably, the organic alcohol amine is at least one of ethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, 3-amino-1-propanol, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, diglycolamine, triglycolamine.

[0009] Preferably, the organic alcohol ether is at least one of ethylene glycol methyl ether, ethylene glycol ethyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, propylene glycol ethyl ether, dipropylene glycol ethyl ether.

[0010] Preferably, the chitosan derivative is at least one of hydroxypropyl chitosan, carboxymethyl chitosan, chitosan hydrochloride, chitosan sulfonate, chitosan phosphate, chitosan lactate, chitosan quaternary ammonium salt.

[0011] Preferably, the imidazole silane is at least one of 1-(dimethylisopropylsilane)imidazole, bis(1-imidazolyl)dimethylsilane, 1-(dimethylethylsilyl)imidazole, trimethylsilimidazole.

[0012] Preferably, the guanidines compound is at least one of trimethylguanidine, tetramethylguanidine, N-acetylguanidine, 1-(diaminomethylene)guanidine, 1-(4-aminobutyl)guanidine, p-aminobenzenesulfonylguanidine.

[0013] Preferably, the polyhydric alcohol type non-ionic surfactant is at least one of a fatty alcohol polyoxyethylene ether, a fatty alcohol polyoxypropylene ether, a fatty alcohol polyoxyethylene-polyoxypropylene block compound, an alkylphenol polyoxyethylene ether, an alkylphenol polyoxypropylene ether.

[0014] In a second aspect, the present application provides a preparation method of the photoresist stripping solution, which adopts the following technical scheme: A preparation method of a photoresist stripping solution, comprising the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidine compound and the polyhydric alcohol type non-ionic surfactant are added into water, mixed and dissolved, and filtered to obtain the photoresist stripping solution.

[0015] In a third aspect, the present application provides the application of the photoresist stripping solution or the photoresist stripping solution prepared by the preparation method in a display panel.

[0016] Preferably, the application of the photoresist stripping solution adopts the following technical scheme: The application of the photoresist stripping solution comprises the following steps: S1, heating the photoresist stripping solution in a water bath to 40-60 DEG C, soaking the display panel to be stripped for 1-3 min to obtain a stripped display panel; S2, cleaning the stripped display panel in ultrapure water, and performing nitrogen blowing and drying treatment to complete the stripping treatment of the photoresist of the display panel.

[0017] The present application has the following beneficial effects: (1) In the photoresist stripping solution of the present application, the chitosan derivative forms a high molecular chain after being dissolved, and forms a protective layer on the surface of the photoresist residue particles through the electrostatic adsorption space steric effect, thereby preventing the photoresist residue from agglomerating. The nitrogen atom on the imidazole ring of the imidazole silane has strong alkalinity and coordination ability, and can react with the ester group, epoxy group and other functional groups in the photoresist to destroy the crosslinked structure of the photoresist, so that the photoresist is decomposed into smaller and more easily dispersed fragments, thereby reducing the possibility of agglomeration of the large photoresist residue. The hydrophilicity of the silicon-oxygen chain can improve the dispersion compatibility of the photoresist residue in the aqueous phase, so that the particles wrapped by the chitosan derivative are prevented from agglomerating again due to the hydrophobic effect. The guanidine group of the guanidine compound can form a polar repulsion with the non-polar components in the photoresist, thereby weakening the interaction between them and preventing the photoresist residue from re-adsorbing. The chitosan derivative, the imidazole silane and the guanidine compound synergistically work together to avoid the agglomeration of the photoresist residue in the liquid phase, and effectively prevent the photoresist from re-sticking.

[0018] (2) The components in the photoresist stripping solution of the present application interact with each other, so that the stripping solution can not only effectively remove the photoresist and reduce the photoresist residue, but also does not cause the photoresist to re-stick after stripping, and does not corrode the metal substrate, thereby having a good application prospect in the manufacturing process of the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0019] The present application will be further described below with reference to the accompanying drawings.

[0020] Figure 1OM image of the substrate after stripping with the photoresist stripping solution without the phenomenon of back-sticking; Figure 2 OM image of the substrate after stripping with the photoresist stripping solution with the phenomenon of back-sticking. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0022] Embodiments 1-5 and Comparative Examples 1-4 provide a photoresist stripping solution and a preparation method thereof.

[0023] Embodiment 1 A photoresist stripping solution, with the sum of mass percentages being 100%, comprises the following components: 20% of organic alcohol amine, 30% of organic alcohol ether, 5% of chitosan derivative, 1% of imidazole silane, 0.5% of guanidines compound, 0.1% of polyhydric alcohol type nonionic surfactant, and the rest of water. The organic alcohol amine is diethanolamine; the organic alcohol ether is ethylene glycol ethyl ether; the chitosan derivative is carboxymethyl chitosan; the imidazole silane is 1-(dimethylisopropylsilane) imidazole; the guanidines compound is trimethyl guanidine; and the polyhydric alcohol type nonionic surfactant is fatty alcohol polyoxyethylene ether. A preparation method of a photoresist stripping solution comprises the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidines compound, and the polyhydric alcohol type nonionic surfactant are added into water, mixed and dissolved, and filtered to obtain the photoresist stripping solution.

[0024] Embodiment 2 A photoresist stripping solution, with the sum of mass percentages being 100%, comprises the following components: 25% of organic alcohol amine, 25% of organic alcohol ether, 7% of chitosan derivative, 2% of imidazole silane, 1% of guanidines compound, and 0.3% of polyhydric alcohol type nonionic surfactant. The organic alcohol amine is triethanolamine; the organic alcohol ether is diethylene glycol dimethyl ether; the chitosan derivative is chitosan quaternary ammonium salt; the imidazole silane is bis(1-imidazolyl) dimethyl silane; the guanidines compound is tetramethyl guanidine; and the polyhydric alcohol type nonionic surfactant is fatty alcohol polyoxypropylene ether. A preparation method of a photoresist stripping solution comprises the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidines compound, and the polyhydric alcohol type nonionic surfactant are added into water, mixed and dissolved, and filtered to obtain the photoresist stripping solution.

[0025] Example 3 A photoresist stripping solution, with the sum of mass percentages being 100%, is composed as follows: organic alcohol amine 30%, organic alcohol ether 20%, chitosan derivative 7%, imidazole silane 3%, guanidine compound 1.5%, polyol type nonionic surfactant 0.5%, and the rest is water; The organic alcohol amine is ethanolamine; the organic alcohol ether is ethylene glycol methyl ether; the chitosan derivative is carboxymethyl chitosan; the imidazole silane is 1-(dimethylisopropylsilane) imidazole; the guanidine compound is 1-(4-aminobutyl) guanidine; and the polyol type nonionic surfactant is fatty alcohol polyoxyethylene ether. A preparation method of a photoresist stripping solution, comprising the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidine compound, and the polyol type nonionic surfactant are added into water, mixed and dissolved, and filtered to obtain the photoresist stripping solution.

[0026] Example 4 A photoresist stripping solution, with the sum of mass percentages being 100%, is composed as follows: organic alcohol amine 35%, organic alcohol ether 15%, chitosan derivative 9%, imidazole silane 4%, guanidine compound 1.5%, and polyol type nonionic surfactant 0.8%. The organic alcohol amine is N,N-dimethylethanolamine; the organic alcohol ether is propylene glycol methyl ether; the chitosan derivative is chitosan hydrochloride; the imidazole silane is trimethylsilimidazole; the guanidine compound is p-aminobenzenesulfonyl guanidine; and the polyol type nonionic surfactant is fatty alcohol polyoxyethylene ether. A preparation method of a photoresist stripping solution, comprising the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidine compound, and the polyol type nonionic surfactant are added into water, mixed and dissolved, and filtered to obtain the photoresist stripping solution.

[0027] Example 5 A photoresist stripping solution, with the sum of mass percentages being 100%, is composed as follows: organic alcohol amine 40%, organic alcohol ether 10%, chitosan derivative 10%, imidazole silane 5%, guanidine compound 2%, and polyol type nonionic surfactant 1%, and the rest is water. The organic alcohol amine is triethanolamine; the organic alcohol ether is diethylene glycol monoethyl ether; the chitosan derivative is carboxymethyl chitosan; the imidazole silane is 1-(dimethylisopropylsilane) imidazole; the guanidine compound is N-acetylguanidine; and the polyol type nonionic surfactant is alkylphenol polyoxyethylene ether. A preparation method of a photoresist stripping solution, comprising the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidines compound and the polyhydric alcohol type nonionic surfactant are added into water, mixed, dissolved, filtered, and a photoresist stripping liquid is obtained.

[0028] Comparative Example 1 Comparative Example 1 is the same as Example 1 except that the chitosan derivative is replaced by an equal amount of imidazole silane, and the preparation is as follows: A photoresist stripping liquid, with the sum of mass percentages being 100%, comprises the following components: 20% of organic alcohol amine, 30% of organic alcohol ether, 6% of chitosan derivative, 0.5% of guanidines compound, 0.1% of polyhydric alcohol type nonionic surfactant, and the balance being water. The organic alcohol amine is diethanolamine; the organic alcohol ether is ethylene glycol ethyl ether; the chitosan derivative is carboxymethyl chitosan; the guanidines compound is trimethyl guanidine; and the polyhydric alcohol type nonionic surfactant is fatty alcohol polyoxyethylene ether. A preparation method of a photoresist stripping liquid, comprising the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the guanidines compound and the polyhydric alcohol type nonionic surfactant are added into water, mixed, dissolved, filtered, and a photoresist stripping liquid is obtained.

[0029] Comparative Example 2 Comparative Example 2 is the same as Example 1 except that the chitosan derivative is replaced by an equal amount of guanidines compound, and the preparation is as follows: A photoresist stripping liquid, with the sum of mass percentages being 100%, comprises the following components: 20% of organic alcohol amine, 30% of organic alcohol ether, 5.5% of chitosan derivative, 1% of imidazole silane, 0.1% of polyhydric alcohol type nonionic surfactant, and the balance being water. The organic alcohol amine is diethanolamine; the organic alcohol ether is ethylene glycol ethyl ether; the chitosan derivative is carboxymethyl chitosan; the imidazole silane is 1-(dimethyl isopropyl silane) imidazole; and the polyhydric alcohol type nonionic surfactant is fatty alcohol polyoxyethylene ether. A preparation method of a photoresist stripping liquid, comprising the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the guanidines compound and the polyhydric alcohol type nonionic surfactant are added into water, mixed, dissolved, filtered, and a photoresist stripping liquid is obtained.

[0030] Comparative Example 3 Comparative Example 3 is the same as Example 1 except that the chitosan derivative is replaced by an equal amount of guanidines compound, and the preparation is as follows: A photoresist stripping solution, which is composed of, with the sum of mass percentages being 100%, organic alcohol amine 20%, organic alcohol ether 30%, imidazole silane 1%, guanidines compound 5.5%, polyol type nonionic surfactant 0.1%, and the rest being water; wherein the organic alcohol amine is diethanolamine; the organic alcohol ether is ethylene glycol ethyl ether; the imidazole silane is 1-(dimethylisopropylsilane) imidazole; the guanidines compound is trimethylguanidine; and the polyol type nonionic surfactant is fatty alcohol polyoxyethylene ether; A preparation method of a photoresist stripping solution, comprising the following steps: adding organic alcohol amine, organic alcohol ether, imidazole silane, guanidines compound, and polyol type nonionic surfactant into water, mixing and dissolving, and filtering to obtain the photoresist stripping solution.

[0031] Comparative Example 4 A photoresist stripping solution, which is composed of, with the sum of mass percentages being 100%, organic base (2-amino-2-methyl-1-propanol 15%, 1,5-diazabicyclo[4.3.0]non-5-ene 5%) 20%, glycol ether solvent (diethylene glycol monobutyl ether) 45%, ketal solvent (acetone glycerol) 25%, nylon acid methyl ester 3%, protective agent (octyl hydroxyethyl imidazoline 1%, 1-amino-1-deoxy-β-D-galactose 0.5%) 1.5%, β-cyclodextrin derivative (hydroxyethyl-β-cyclodextrin) 0.5%, and the rest being water; A preparation method of a photoresist stripping solution, comprising the following steps: First, the organic base, glycol ether solvent, ketal solvent, nylon acid methyl ester, β-cyclodextrin derivative, and pure water are uniformly mixed, and then the protective agent is added and uniformly mixed, and filtered to obtain the photoresist stripping solution.

[0032] Performance test (1) Stripping performance of the photoresist stripping solution The photoresist stripping solutions prepared by the examples 1-5 and the comparative examples 1-4 of the present application are heated to 60℃ in a water bath, and then a copper-plated substrate containing positive photoresist is soaked in the photoresist stripping solution, and after 2 minutes of stripping, a stripped substrate is obtained. The stripped substrate is washed in ultrapure water for 1 minute, and then nitrogen blowing drying treatment is performed, so that the stripping treatment of the photoresist of the display panel is completed. An optical microscope (OM) is used to observe the plane of the display panel, and whether the photoresist is re-stuck is checked. A scanning electron microscope (SEM) is used to measure the thickness change of the photoresist film layer, and the corrosion of the metal layer is evaluated. The specific results are shown in Table 1. wherein the re-stick evaluation: o: no re-stick phenomenon; Δ: re-stick phenomenon. The corrosion evaluation: A: the metal layer is not corroded (the film layer thickness change ≤ 50 Å); B: the metal layer has slight corrosion (50 Å < film layer thickness change ≤ 100 Å); C: the metal layer is corroded (the film layer thickness change > 100 Å).

[0033] The OM images of the substrates after stripping by the photoresist stripping solution are shown in Table 1. Figure 1 、 2 The OM image of the substrate after stripping by the photoresist stripping solution without re-sticking phenomenon is shown in Figure 1. Figure 1 The OM image of the substrate after stripping by the photoresist stripping solution with re-sticking phenomenon is shown in Figure 2. Figure 2 The OM image of the substrate after stripping by the photoresist stripping solution with re-sticking phenomenon is shown in Figure 2.

[0034] Table 1

[0035] As shown in Table 1, the photoresist stripping solutions prepared in Examples 1-5 can effectively prevent the re-sticking of photoresist residues and have no corrosion to the substrate, which are obviously superior to Comparative Examples 1-4. By comparing Example 1 with Comparative Examples 1-4, it can be fully illustrated that the synergistic effect among the chitosan derivative, the imidazole silane and the guanidium compound in the photoresist stripping solution of the present application greatly improves the phenomenon of re-sticking of photoresist to the substrate; by comparing Example 1 with Comparative Example 1, it can be known that the imidazole silane can significantly improve the corrosion resistance of the photoresist stripping solution to the substrate; by comparing Example 1 with Comparative Example 4, it can be known that the photoresist stripping solution of the present application has obvious advantages over the existing photoresist stripping solution, and the interaction among the components can well prevent the occurrence of the re-sticking phenomenon of photoresist.

[0036] (2) Stability of the photoresist stripping solution The photoresist stripping solutions prepared in Examples 1-5 and Comparative Examples 1-4 were placed in the open air, and the changes were observed at 60°C for 8h, 16h and 24h, respectively. Whether the crystal precipitation occurred in the photoresist stripping solution was observed, and the results were evaluated as "■" when no crystal precipitation occurred and "×" when crystal precipitation occurred, and the results were recorded in Table 2 below.

[0037] Table 2

[0038] As shown in Table 2, the stripping solutions prepared in Examples 1-5 are obviously superior to Comparative Examples 1-4, and no crystal precipitation occurs within 24h at the stripping temperature (60°C), which fully illustrates that the stripping solution of the present application is stable in performance. By comparing Example 1 with Comparative Examples 1-3, it can be fully illustrated that the lack of any component among the chitosan derivative, the imidazole silane and the guanidium compound in the photoresist stripping solution of the present application will destroy the stability of the stripping solution, so that the stripping solution cannot exhibit good stripping effect. In addition, by comparing Example 1 with Comparative Example 4, it can be illustrated that the stability of the existing stripping solution is not as good as that of the photoresist stripping solution of the present application.

[0039] It should be noted that the above disclosed embodiments only embody the technical solutions of the present application, and are not used to limit the protection scope of the present application. Although the present application is described in detail with reference to the preferred embodiments, any person skilled in the art should understand that modifications or various changes, equivalent replacements within the scope of the technical solutions of the present application can be made, and should belong to the protection scope of the present application.

Claims

1. A photoresist stripping solution, characterized by, The composition is as follows: 20%-40% of organic alcohol amine, 10%-30% of organic alcohol ether, 5%-10% of chitosan derivative, 1%-5% of imidazole silane, 0.5%-2% of guanidines compound, 0.1%-1% of polyol type nonionic surfactant, and the balance is water.

2. The photoresist stripping solution of claim 1, wherein The mass percentage of the organic alcohol amine is 25%-35%; and / or, the mass percentage of the organic alcohol ether is 15%-25%; and / or, the mass percentage of the chitosan derivative is 7%-9%; and / or, the mass percentage of the imidazole silane is 2%-4%; and / or, the mass percentage of the guanidines compound is 1%-1.5%; and / or, the mass percentage of the polyol type nonionic surfactant is 0.3%-0.8%.

3. The photoresist stripping solution of claim 1, wherein The organic alcohol amine is at least one of ethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, 3-amino-1-propanol, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, diglycolamine, triglycolamine.

4. The photoresist stripping solution of claim 1, wherein The organic alcohol ether is at least one of ethylene glycol methyl ether, ethylene glycol ethyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, propylene glycol ethyl ether, dipropylene glycol ethyl ether.

5. The photoresist stripping solution of claim 1, wherein The chitosan derivative is at least one of hydroxypropyl chitosan, carboxymethyl chitosan, chitosan hydrochloride, chitosan sulfonate, chitosan phosphate, chitosan lactate, chitosan quaternary ammonium salt.

6. The photoresist stripping solution of claim 1, wherein The imidazole silane is at least one of 1-(dimethylisopropylsilane)imidazole, bis(1-imidazolyl)dimethylsilane, 1-(dimethylethylsilyl)imidazole, trimethylsilimidazole.

7. The photoresist stripping solution of claim 1, wherein The guanidines compound is at least one of trimethylguanidine, tetramethylguanidine, N-acetylguanidine, 1-(diaminomethylene)guanidine, 1-(4-aminobutyl)guanidine, p-aminobenzenesulfonylguanidine.

8. The photoresist stripping solution of claim 1, wherein The polyol type nonionic surfactant is at least one of fatty alcohol polyoxyethylene ether, fatty alcohol polyoxypropylene ether, fatty alcohol polyoxyethylene-polyoxypropylene block compound, alkylphenol polyoxyethylene ether, alkylphenol polyoxypropylene ether.

9. A method for producing the photoresist stripping solution according to any one of claims 1 to 8, characterized by, The method comprises the following steps: The organic alcohol amine, the organic alcohol ether, the chitosan derivative, the imidazole silane, the guanidines compound, and the polyol type nonionic surfactant are added into water, mixed and dissolved, and filtered to obtain the photoresist stripping liquid.

10. Application of the photoresist stripping liquid of any one of claims 1-8 or prepared by the preparation method of claim 9 in a display panel.

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