Resonant cavity design method and related device

By constructing and modifying the layout of the resonant cavity, the problem of inconsistency between the cavity frequency design value and the measured value was solved, ensuring high-quality readout operations of qubits in the superconducting quantum chip.

CN121389948APending Publication Date: 2026-01-23ORIGIN QUANTUM COMPUTING TECH (HEFEI) CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202410940354.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-07-15
Publication Date
2026-01-23

AI Technical Summary

Technical Problem

In superconducting quantum chips, the difference between the designed cavity frequency and the measured value of the resonant cavity affects the readout operation of the qubits.

Method used

By constructing a first and second layout, and using electronic design automation software for simulation, the layout is corrected based on the simulation results to match the target attributes, ensuring that the design values ​​of the resonant cavity are consistent with the measured values.

Benefits of technology

The performance and function of the resonant cavity met the design requirements, improving the accuracy and reliability of quantum bit reading.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121389948A_ABST
    Figure CN121389948A_ABST
Patent Text Reader

Abstract

The invention discloses a resonant cavity design method and a related device, and belongs to the field of quantum computing manufacturing. The design method of the resonant cavity comprises the steps that a first layout and a second layout of the resonant cavity are obtained, the second layout is constructed based on the first layout and parameters associated with manufacturing of the resonant cavity, and the second layout and the first layout have differences determined depending on the parameters; the first layout and the second layout are simulated to determine the attribute value of the target attribute of the resonant cavity, and the attribute value is used for evaluating the difference and comprises a first value of the first layout and a second value of the second layout; and correcting the first layout according to a target quantity determined from the parameters according to the first value and the second value. The design method can be used for designing the resonant cavity which meets performance and function requirements and is higher in quality.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of quantum computing, in particular, the field of quantum computing manufacturing, and more particularly, the present application relates to a design method of a resonant cavity and related apparatus. BACKGROUND

[0002] As a key device of a superconducting quantum computer, a superconducting quantum chip is directly related to the performance of a quantum computer in performing quantum computation.

[0003] Currently, a superconducting quantum bit is mostly in the form of transmon or Xmon evolved from transmon. In terms of structure, a quantum bit in the form of Xmon has a cross-capacitance and a Josephson junction (e.g., provided by a superconducting quantum interference device) connected thereto.

[0004] To be coupled with other bits, the quantum bit can be capacitively coupled with each other through one of the arms of the cross-capacitance. And to read the state of the quantum bit, the other arm of the cross-capacitance can also be used. Specifically, a read bus (which can be used for reading multiple quantum bits) and a read resonant cavity are configured, so that the read resonant cavity is coupled with the read bus and the quantum bit at two ends thereof to realize the reading function.

[0005] An important indicator for the read resonant cavity to realize reading is the frequency thereof, which can be referred to as cavity frequency. Therefore, it is very important to ensure that the cavity frequency of the read resonant cavity meets the requirements at both the layout design and device manufacturing stages. SUMMARY

[0006] Examples of the present application provide a design method of a resonant cavity and related apparatus, which can be used to realize a high-quality resonant cavity that meets design requirements and is accurately manufactured, so as to be applied to a superconducting quantum chip to perform high-quality reading operation on a superconducting quantum bit.

[0007] The scheme of the examples of the present application is implemented by the following contents.

[0008] In a first aspect, the design method of the resonant cavity disclosed by the examples of the present application comprises:

[0009] obtaining a first layout and a second layout of the resonant cavity, the second layout being constructed based on the first layout and a parameter associated with the manufacturing of the resonant cavity, the second layout having a difference determined depending on the parameter with the first layout;

[0010] simulating the first layout and the second layout respectively to determine attribute values of target attributes of the resonant cavity, the attribute values being used to evaluate the difference and including a first value of the first layout and a second value of the second layout; and

[0011] The first layout is optionally corrected according to a target quantity determined from the parameter according to the first value and the second value, to obtain a target layout of the resonant cavity.

[0012] According to some examples of the present application, the method of optionally correcting the first layout according to a target quantity determined from the parameter according to the first value and the second value, to obtain a target layout of the resonant cavity, comprises:

[0013] The first layout is optionally corrected according to a difference between the first value and the second value, taking the first value as a reference value, to obtain a target layout of the resonant cavity.

[0014] According to some examples of the present application, the first layout is optionally corrected according to a difference between the first value and the second value, taking the first value as a reference value, to obtain a target layout of the resonant cavity, comprises:

[0015] When the difference between the first value and the second value is not zero, a supplementary quantity of the parameter is determined according to the difference, and the first layout is corrected based on the parameter after being supplemented, and the corrected first layout is taken as the target layout;

[0016] Or, when the difference between the first value and the second value is zero, the first layout does not need to be corrected, and the uncorrected first layout is taken as the target layout.

[0017] According to some examples of the present application, the parameter is a parameter set composed of at least two observation quantities, and the target quantity is at least one of the at least two observation quantities.

[0018] According to some examples of the present application, the target attribute is a single attribute, and is a cavity frequency or a quality factor of the resonant cavity.

[0019] According to some examples of the present application, the target attribute is a plurality of attributes, and is a cavity frequency and a quality factor of the resonant cavity, the first value includes a first cavity frequency and a first quality factor, and the second value includes a second cavity frequency and a second quality factor.

[0020] According to some examples of the present application, the first layout and the second layout are respectively configured with a coupling structure, and the coupling structure includes a read line and a resonant cavity coupled to each other.

[0021] The parameter includes a structure parameter of the coupling structure, and the difference is that the value of the structure parameter of the first layout is different from the value of the structure parameter of the second layout.

[0022] According to some examples of the present application, the structure parameter includes a coupling distance of the read line and the resonant cavity.

[0023] According to some examples of the present application, the readout line and the resonant cavity are coplanar waveguide transmission lines respectively, and the structural parameters include a width and / or a spacing, the width being a width of a center strip of the coplanar waveguide transmission line, and the spacing being a spacing between the center strip and a ground strip of the coplanar waveguide transmission line.

[0024] In a second aspect, examples of the present application disclose a design device of a resonant cavity, comprising:

[0025] an obtaining module, configured to obtain a first layout and a second layout of the resonant cavity, the second layout being constructed based on the first layout and a parameter associated with manufacturing of the resonant cavity, the second layout having a difference with the first layout determined depending on the parameter;

[0026] a simulation module, configured to respectively simulate the first layout and the second layout to determine attribute values of target attributes of the resonant cavity, the attribute values being used to evaluate the difference and including a first value of the first layout and a second value of the second layout; and

[0027] a correction module, configured to optionally correct the first layout based on a target amount determined from the parameter according to the first value and the second value, to obtain a target layout of the resonant cavity.

[0028] In a third aspect, examples of the present application disclose a storage medium. The storage medium stores a computer program, and the computer program is configured to implement the design method of the resonant cavity when executed.

[0029] In a fourth aspect, examples of the present application disclose a computer device, comprising a memory and a processor, the memory storing a computer program, and the processor is configured to run the computer program to implement the design method of the resonant cavity.

[0030] Advantages:

[0031] Due to errors or other factors existing in the manufacturing process of the resonant cavity, there is a difference between the design value and the measured value of the specific performance or functional index of the resonant cavity, which further adversely affects the readout of the superconducting quantum bit state by the readout cavity in the superconducting quantum chip.

[0032] The scheme of examples of the present application considers the difference of the involved parameters in the manufacturing process of the resonant cavity to construct different layouts, and simulates them. Then, according to the simulation results, a target amount that needs to be considered in the design is determined. Therefore, in the design, the specific layout structure is adjusted according to the target amount, so that the resonant cavity after being actually manufactured can have a performance or functional performance more in line with actual needs. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to make the description clearer, the drawings needed to be used in the description will be briefly introduced as follows.

[0034] Figure 1 A structural schematic diagram of a quantum bit and its reading structure (including a resonant cavity and a reading bus) on a quantum chip in the related art;

[0035] Figure 2 A flowchart of a design method of a resonant cavity in an example of the present application;

[0036] Figure 3 A structural schematic diagram of a resonant cavity and a reading line coupled to each other in an example of the present application;

[0037] Figure 4 A flowchart of another design method of a resonant cavity in an example of the present application;

[0038] Figure 5 A principle block diagram of a resonant cavity design device in an example of the present application;

[0039] Figure 6 A principle block diagram of a computer device in an example of the present application.

[0040] Legend of reference signs: 301 - obtaining module; 302 - simulation module; 303 - correction module. DETAILED DESCRIPTION

[0041] A quantum chip based on a superconducting quantum circuit includes superconducting circuit structures such as a quantum bit and a microwave resonant cavity. The quantum bit is a two-level system composed of a capacitor and a Josephson junction with nonlinear inductance characteristics. Capacitors, inductors, and other electrical parameters are designed in different shapes to achieve different goals.

[0042] The shape of a Transmon quantum bit is like a "+" shape. It is composed of a cross-shaped capacitor and a superconducting quantum interference device (squid) connected to the end of one branch of the capacitor.

[0043] The superconducting quantum interference device (squid) includes one or more Josephson junctions. The Josephson junction is a device including two electrodes and a thin insulating barrier layer separating the two electrodes, and the materials of the two electrodes can exhibit superconducting characteristics at their critical temperature or below the critical temperature.

[0044] In the quantum bit system described above, there are various circuit structures with different functions around the quantum bit, such as reading resonant cavities and couplers for coupling between quantum bits.

[0045] The circuit structure therein generally includes a driving control signal line (XY-Control Line, also referred to as xy control line or pulse control signal line) for performing XY rotation operation on the quantum bit. By applying a driving voltage signal in the corresponding circuit, the quantum bit can be excited to transition; and it is associated with the quantum bit through capacitive coupling.

[0046] The circuit structure also includes a structure for performing Z rotation operation on the quantum bit, and can be completed by a control signal line near a superconducting quantum interference device (squid). The control signal line is referred to as a magnetic flux control signal line (Z-Control Line, also referred to as z control signal line, or frequency control signal line, etc.). As described above, the magnetic flux control signal line is arranged near the superconducting quantum interference device (squid), which excites current and inductively couples with the superconducting quantum interference device (squid) through a magnetic field.

[0047] It should be noted that the magnetic flux control signal line and the driving control line can both be used to control the quantum bit, but their control forms and purposes are essentially different.

[0048] Among them, the driving control signal line applies a pulse to the quantum bit in the form of an electric field, which causes the energy level of the quantum bit to transition.

[0049] And the signal transmitted by the magnetic flux control signal line will generate a magnetic field and be applied to the superconducting quantum interference device (squid) region, and the magnetic flux passing through the quantum interference device (squid) region can cause a change in the critical current of the squid. The change in the critical current causes a change in the frequency of the tunable quantum bit, that is, the frequency of the quantum bit can be controlled by the signal transmitted by the magnetic flux control signal line.

[0050] Figure 1 A structural diagram of a quantum bit arranged on a quantum chip in the related art.

[0051] In combination Figure 1 As shown, the structure of the quantum bit often uses a single ground-connected capacitor and a superconducting quantum interference device connected to one end of the capacitor with the other end grounded. And the capacitor is often a cross-shaped parallel plate capacitor.

[0052] Referring to Figure 1 As shown, the cross-shaped capacitor plate C q (bit capacitor) is surrounded by a ground plane (GND), and the cross-shaped capacitor plate C q has a gap (usually an air gap, insulated) between the ground plane (GND).

[0053] One end of the superconducting quantum interference device is connected to the cross-shaped capacitor plate C qThe other end of the (one end of a capacitive arm, such as the first end mentioned later) is connected to the ground plane (GND).

[0054] Since the cross-shaped capacitive plate C q The first end is usually used to connect the superconducting quantum interference device, and the second end is used to couple with the readout resonant cavity. The other two ends of the cross-shaped capacitive plate C q The first end and the second end are usually reserved a certain space for arranging the microwave transmission lines of the drive control signal line, the magnetic flux control signal line, etc. Similarly, the resonant cavity is usually reserved a certain space for arranging the readout signal transmission line coupled with the resonant cavity.

[0055] When performing quantum computing, the frequency of the quantum bit is first adjusted to the working frequency (initial state making) by using the magnetic flux control signal on the magnetic flux control signal line, and then the quantum state of the quantum bit in the initial state is controlled by applying the quantum state control signal through the drive control signal line. Then, the quantum state of the controlled quantum bit is read by transmitting the read input signal through the read bus and acting on the resonant cavity.

[0056] Specifically, the quantum state of the quantum bit can be determined by applying a read probe signal (for example, a microwave signal with a frequency of 4GHz-8GHz) on the read signal transmission line coupled with the resonant cavity, and then analyzing the read feedback signal (a signal in response to the read probe signal) output by the read signal transmission line. The structures such as the magnetic flux control signal line, the drive control signal line and the read signal transmission line can all use microwave transmission line structures, which will not be described here.

[0057] It should be noted that the quantum chip performs quantum computing as follows:

[0058] The waveform instructions generated by compiling the quantum program in the quantum computing task are sent to the signal generation physical device. The signal generation physical device generates corresponding signals, which are sent to the quantum chip to operate corresponding quantum bits. Then, a quantum state read signal is applied to the corresponding quantum bit, and the quantum state information of the quantum bit is determined according to the read feedback signal fed back by the quantum bit based on the quantum state read signal, and finally the quantum computing result is analyzed.

[0059] As discussed above, the readout resonant cavity plays an important role in correctly reading the state of the quantum bit. One important factor for the readout operation of the readout resonant cavity is its frequency, or cavity frequency.

[0060] The frequency of the readout resonant cavity corresponding to the bit needs to be determined in the design stage, so as to better improve the extraction accuracy.

[0061] However, in practice, the applicant found that there was a difference between the design value and the measured value of the cavity frequency of the resonant cavity. In some cases, such error was even larger, so as to affect the normal operation of the quantum bit.

[0062] Therefore, in order to obtain a more accurate quantum bit frequency, avoid the difference between the manufacturing process, design and the cavity frequency of the manufactured quantum chip, in the present application, the applicant proposes a design method of the resonant cavity, through which the cause leading to the difference between the design value and the measured value of the cavity frequency of the resonant cavity is obtained and determined. After determining the cause, when designing the resonant cavity, the process conditions are considered for correction, or the measured data are predicted according to the design drawing, and then the reading signal of the superconducting quantum bit or the possible other operation, or the parameter corresponding to the signal of the operation is adaptively adjusted, so as to obtain the expected adjustment result.

[0063] In an example, referring to Figure 2 , the design method of the resonant cavity comprises:

[0064] Step S101, obtaining a first layout and a second layout of the resonant cavity, the second layout being constructed based on the first layout and parameters associated with the manufacturing of the resonant cavity, the second layout having a difference determined depending on the parameters from the first layout;

[0065] Step S102, respectively simulating the first layout and the second layout to determine attribute values of target attributes of the resonant cavity, the attribute values being used to evaluate the difference and comprising a first value of the first layout and a second value of the second layout; and

[0066] Step S103, optionally correcting the first layout according to a target amount determined from the parameters according to the first value and the second value, to obtain a target layout of the resonant cavity.

[0067] As described above, in the design method of the resonant cavity of the example of the present application, different layouts are constructed, and simulations are performed according to the different layouts, or the simulation results are corrected according to the simulation results, so as to obtain a resonant cavity that meets the design requirements and can be expected to meet the operation requirements of the quantum bit.

[0068] Through the above-mentioned scheme, the resonant cavity designed and manufactured according to the design can achieve the designed and expected effect, and thus the manufactured resonant cavity can exhibit the expected performance and function in the superconducting quantum chip.

[0069] The steps will be described in detail hereinafter.

[0070] For step S101, the first layout and the second layout of the resonant cavity are obtained, the second layout is constructed based on the first layout and a parameter associated with the manufacturing of the resonant cavity, and the second layout has a difference with the first layout determined depending on the parameter.

[0071] The first layout and the second layout of this step can use this EDA (Electronic Design Automation) software, which can be an open source EDA software, or various non-open source commercial EDA software. As a non-limiting example, the EDA software includes but is not limited to Cadence, PADS, AD, Protel, AlTIum Designer, OrCAD, PCAD, etc. For the field of quantum computers, it can be QEDA, namely Quantum Electronic Design Automation.

[0072] The first layout therein can be a basic layout, or described as a reference layout, etc. The first layout can be a layout of various designs, or a layout corresponding to the resonant cavity that has been manufactured. The second layout is a "new" layout obtained after adjustment based on the first layout.

[0073] Therefore, the first layout and the second layout are different. The difference is manifested and determined according to a certain parameter. And the parameter is a parameter associated with the manufacturing of the resonant cavity.

[0074] The "parameter associated with the manufacturing of the resonant cavity" can be a process parameter in the manufacturing process, or a structure parameter corresponding to the entity structure (resonant cavity) that is expected to be achieved in the manufacturing process.

[0075] According to different needs, the second layout can be designed based on the first layout according to one or more (such as at least two) parameters. When multiple parameters are used, in view of the fact that the simulation may have a large complexity, or even be difficult to simulate, therefore, in different examples, the complexity, accuracy and other factors of the simulation can be considered for trade-off and selection.

[0076] In short, the parameter can be a single observation quantity, or the parameter is a parameter set composed of at least two observation quantities. Accordingly, the target quantity determined in step S103 subsequently can also be a single quantity, or multiple quantities. That is, the target quantity is at least one observation quantity in the at least two observation quantities - which will be described again and more specifically explained later.

[0077] In view of the usage scenario of the resonator in the superconducting quantum chip, in some examples, the first layout and the second layout mentioned above are further respectively configured with a coupling structure, and the coupling structure includes a readout line and a resonator coupled to each other. That is, the readout line can be added to the layout.

[0078] Since the state of the quantum state of the superconducting quantum bit is obtained through the (readout) resonator; and as Figure 1 shown, the input of the read signal and the output of the read result can be transmitted through a read bus (which can be simply referred to as a readout line).

[0079] Therefore, when considering the difference between the first layout and the second layout, the relationship between the resonator and the readout line can also be considered.

[0080] Then, the parameter used as one of the bases for constructing the second layout based on the first layout, and used to determine the difference between the first layout and the second layout can include a structural parameter of the coupling structure. Accordingly, the difference between the two layouts determined according to the parameter can be that the value of the structural parameter of the first layout is different from the value of the structural parameter of the second layout.

[0081] As a specific and optional example, the parameter determined by the relationship / association between the resonator and the readout line is, for example, the coupling distance between the two, the structural size, or the combination of the two, etc.

[0082] When the resonator and the readout line are in parallel line coupling mode, the structural parameter includes the coupling distance of the readout line and the resonator determined by the perpendicular distance.

[0083] Alternatively, when the readout line and the resonator are respectively designed and manufactured in the structure of a coplanar waveguide transmission line, the structural parameter can include the width and / or the spacing. And corresponding to the example of the coplanar waveguide, the width is the width of the center band of the coplanar waveguide transmission line, and the spacing is the spacing between the center band and the ground band of the coplanar waveguide transmission line.

[0084] Further, when the readout line and the resonator are respectively coplanar waveguide transmission lines, and the parameter used to measure the difference between the two is the coupling distance in the structural parameter, based on the parallel line coupling mode, the width of the ground plane of the adjacent part of the two coplanar waveguide transmission lines can be, as Figure 3 shown.

[0085] After determining the first layout and the second layout of the resonator in the above-mentioned manner, the two layouts can be simulated to perform the above-mentioned step S102 of the examples of the present application.

[0086] Step S102, respectively simulate the first layout and the second layout to determine attribute values of target attributes of the resonant cavity, the attribute values being used to evaluate the difference and including a first value of the first layout and a second value of the second layout.

[0087] Various simulation software can be used in this step, and include but are not limited to CST, HFSS, Maxwell, Q3D, Sonnect or Comsol, etc. The simulation software can model the layout and perform corresponding simulation according to corresponding parameter settings. The specific simulation method varies according to different simulation software, and can be obtained according to the corresponding operation instruction document. To avoid redundancy, detailed discussion is not made in this application.

[0088] After simulation, the corresponding results can be obtained, such as the attribute values of the target attributes mentioned in step S102. For example, when the frequency of the resonant cavity, i.e. the cavity frequency, is desired to be investigated, the target attribute mentioned can be the cavity frequency of the resonant cavity. In other examples, when the quality factor of the resonant cavity is concerned, the target attribute mentioned can be the quality factor of the resonant cavity.

[0089] The above is described with the target attribute being a single attribute, in other examples of the present application, the target attribute can be two or more attributes. That is, the target attribute is a collection of at least one attribute. For example, the target attribute is a plurality of attributes (such as at least two) and is the cavity frequency and the quality factor of the resonant cavity.

[0090] Based on the corresponding relationship between the target attribute and the attribute value, the first value in the simulation result of the first layout can be any one or both of the first cavity frequency and the first quality factor; the second value in the simulation result of the second layout includes any one or both of the second cavity frequency and the second quality factor.

[0091] It is worth pointing out that different simulation software may be needed for different target attributes, or different simulation function modules or simulation methods are used with the same simulation software.

[0092] After the attribute values of the target attributes are obtained by simulation, i.e. the first value of the first layout and the second value of the second layout, the target quantity is determined according to these values, and then the layout is adjusted according to the functional or performance requirements according to the target quantity. That is, the operation of step S103, "correcting the first layout according to the target quantity determined from the parameters according to the first value and the second value to obtain the target layout of the resonant cavity".

[0093] For example, when the cavity frequency is taken as the factor, i.e., the target attribute is determined as the cavity frequency. Correspondingly, the parameter that can be used to measure the difference between the two layouts can be determined as the structural size related to the resonant cavity itself, such as the distance between the resonant cavity in the form of a coplanar waveguide and the center conductor of the read line, or can also be the coupling distance.

[0094] Therefore, the parameter can be the coupling distance, and the target attribute can be the cavity frequency. Therefore, by setting the coupling distance in the first layout and the second layout as different values, the cavity frequencies of the resonant cavities in the two layouts are obtained through simulation, respectively.

[0095] If the two frequency values are the same, it indicates that the parameter (coupling distance) does not affect the cavity frequency of the resonant cavity. Therefore, when designing the resonant cavity, the coupling distance can be appropriately adjusted according to the needs of other layout wiring.

[0096] If the two frequency values are different, it indicates that the parameter (coupling distance) affects the cavity frequency of the resonant cavity. Therefore, when designing the resonant cavity, in order to meet the required cavity frequency, it can be necessary to ensure a specific coupling distance value.

[0097] And based on this, according to the cavity frequency of the resonant cavity in the first layout with the first coupling distance (the first simulation value), the cavity frequency of the resonant cavity in the second layout with the second coupling distance (the second simulation value). When the expected value of the frequency of the resonant cavity is A value, then the difference between the first simulation value and the A value, and the difference between the second simulation value and the A value can be considered to determine which value is closer to the A value.

[0098] For example, if the first simulation value is closer to the A value, then the coupling distance can be set to a value closer to the first coupling distance. Conversely, if the second simulation value is closer to the A value, then the coupling distance can be set to a value closer to the second coupling distance.

[0099] In short, the scheme of the examples of the present application can determine which factor affects the cavity frequency of the resonant cavity. Then when designing the layout of the resonant cavity, the design is made for this factor.

[0100] In some specific examples, the method for optionally correcting the first layout according to the target amount determined from the parameter based on the first value and the second value to obtain the target layout of the resonant cavity comprises: taking the first value as a reference value, and optionally correcting the first layout according to the difference between the first value and the second value to obtain the target layout of the resonant cavity; as Figure 4 shown.

[0101] In the above steps, since there are different cases for the difference between the first value and the second value, corresponding operations can be performed according to the corresponding cases in different cases.

[0102] For example, when the difference between the first value and the second value is not zero, a compensation amount of the target amount is determined according to the difference, and the first layout is modified based on the compensated target amount, and the modified first layout is taken as the target layout.

[0103] For example, when the difference between the first value and the second value is zero, the first layout does not need to be modified, and the unmodified first layout is taken as the target layout.

[0104] Alternatively, when the difference between the first value and the second value is zero, the first layout and the second layout can be simulated again, and a new target attribute is selected to obtain a new attribute value. Then, it is determined whether the target amount needs to be compensated according to the new attribute value, and the first layout is adjusted when compensation is needed, or the first layout is not adjusted when compensation is not needed.

[0105] Alternatively, when the difference between the first value and the second value is zero, a new second layout is constructed based on the first layout with new parameters. Then, the first layout and the second layout are simulated, and a new target attribute or the original target attribute is selected to obtain a corresponding attribute value. Then, it is determined whether the target amount needs to be compensated according to the attribute value, and the first layout is adjusted when compensation is needed, or the first layout is not adjusted when compensation is not needed.

[0106] As a specific example, when the cavity frequency is selected as the target attribute of the resonant cavity (in the form of a coplanar waveguide). The resonant cavity to be actually used is set by the first layout and is manufactured. The second layout is constructed according to the parameter associated with the manufacture of the resonant cavity, i.e., the center conductor width; that is, the center conductor widths of the resonant cavities in the first layout and the second layout are different, so the first layout and the second layout have differences determined by the width of the center conductor (other parameters are the same).

[0107] Then, the first layout and the second layout are simulated to obtain their respective cavity frequency values corresponding to the cavity frequency attribute, which are respectively denoted as the first frequency value corresponding to the first layout and the second frequency value corresponding to the second layout.

[0108] Assuming that the first frequency value and the second frequency value are the same, it indicates that the width of the center conductor does not affect the cavity frequency of the resonant cavity. Therefore, according to the first frequency value and the second frequency value, it can be determined that the width of the center conductor in the parameter can be taken as the target amount, and the resonant cavity can be designed using the first layout, or the width of the center conductor in the first layout is modified to form the layout of the resonant cavity. That is, in this example, by determining the target amount, the resonant cavity can still obtain the same cavity frequency performance when a different target amount is selected.

[0109] On the other hand, assuming that the first frequency value and the second frequency value are different, it is shown that the width of the center strip affects the cavity frequency of the resonant cavity. Therefore, according to the first frequency value and the second frequency value, the width of the center strip in the parameter can be determined as a target quantity, and in order to obtain a new cavity frequency value, the width of the center strip of the resonant cavity in the first layout can be changed to form a layout of the resonant cavity.

[0110] That is, in such an example, by determining the target quantity, when a different target quantity is selected, a resonant cavity with a specified different cavity frequency performance can be obtained. And when the cavity frequency of the resonant cavity manufactured according to different layouts deviates from the expected value, the target quantity determined by the foregoing method can be selected to correct the problem that the cavity frequency does not meet the design caused by the process. That is, when the design value of the cavity frequency according to the design layout deviates from the measured value, the difference between the design value and the measured value can be compensated by designing a different center strip width.

[0111] Through the implementation of the above scheme, the applicant finds that for the planar module, when the resonant cavity and the read bus increase according to the single side etching distance (that is, the width of the center strip decreases, and the gap width between the ground plane and the center strip is expressed), the cavity frequency decreases obviously, so it can be determined that the frequency of the resonant cavity is sensitive to the etching distance.

[0112] In addition, if the coupling distance of the resonant cavity and the read line is kept unchanged, the size of the read line (the width of the center strip and the gap between the two sides and the ground plane) is changed, and the size of the resonant cavity is kept unchanged, the quality factor can be changed greatly (such as from 6148 to 5467) while ensuring that the cavity frequency fluctuates little (such as from 7.4774 GHz to 7.4424 GHz).

[0113] Figure 5 The structure schematic diagram of the design device of the resonant cavity provided by an embodiment of the present application is shown. The design device of the resonant cavity comprises:

[0114] The obtaining module 301 obtains a first layout and a second layout of the resonant cavity, the second layout is constructed based on the first layout and a parameter associated with the manufacturing of the resonant cavity, and the second layout has a difference determined depending on the parameter with the first layout;

[0115] The simulation module 302 is configured to simulate the first layout and the second layout respectively to determine attribute values of target attributes of the resonant cavity, the attribute values are used to evaluate the difference and include a first value of the first layout and a second value of the second layout; and

[0116] The correction module 303 is configured to optionally correct the first layout according to a target quantity determined from the parameter according to the first value and the second value to obtain a target layout of the resonant cavity.

[0117] Figure 6 A structural diagram of a computer device provided by an embodiment of the present application is shown, which includes a memory and a processor. The memory stores a computer program, and the processor implements the steps of the design method of the resonant cavity in any of the above embodiments when executing the computer program.

[0118] The embodiment of the present application further provides a computer readable storage medium, which stores a computer program. The computer program is executed by a computer to enable the computer to perform the functions of the computer system for solving the combination optimization problem in any of the above embodiments.

[0119] The embodiment of the present application further provides a computer program product comprising instructions which, when executed by a computer, cause the computer to perform the design method.

[0120] It can be understood that the specific examples in the present application are only to help those skilled in the art better understand the embodiments of the present application, and not to limit the scope of the present application.

[0121] It can be understood that in various embodiments of the present application, the size of the serial number of each process does not mean the order of execution, and the execution order of each process should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0122] It can be understood that the various embodiments described in the present application can be implemented alone or in combination, and the embodiments of the present application do not limit this.

[0123] Unless otherwise specified, all technical and scientific terms used in the embodiments of the present application have the same meanings as those commonly understood by those skilled in the art of the present application. The terms used in the present application are only for the purpose of describing the specific embodiments of the present application, and are not intended to limit the scope of the present application.

[0124] The term "and / or" used in the present application includes any and all combinations of one or more related listed items. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0125] It can be understood that the processor of the embodiments of the present application can be an integrated circuit chip with signal processing capability. In the implementation process, each step of the above method embodiments can be completed by integrated logic circuits or instructions in the form of software in the processor.

[0126] The above processor can be a general processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component.

[0127] The methods, steps and logic blocks in the embodiments of the present application can be implemented or performed by a general processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component.

[0128] The steps of the method disclosed in combination with the embodiments of the present application can be directly embodied as a hardware code processor to perform, or be performed by a combination of hardware and software modules in the code processor. The software module can be located in a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, or other mature storage medium in the art. The storage medium is located in the storage, and the processor reads information in the storage and combines the hardware to complete the steps of the above method.

[0129] It can be understood that the memory in the embodiments of the present application can be a volatile memory or a non-volatile memory, or can include both volatile and non-volatile memories. The non-volatile memory can be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM) or a flash memory. The volatile memory can be a random access memory (RAM). It should be noted that the memory of the system and method described herein is intended to include but not limited to these and any other suitable type of memory.

[0130] Those of ordinary skill in the art can realize that the units and algorithm steps of the examples described in combination with the embodiments disclosed herein can be realized in electronic hardware, or a combination of computer software and electronic hardware. Whether the functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present application.

[0131] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system, device and unit described above can refer to the corresponding process in the foregoing method embodiments, which will not be repeated here.

[0132] In several embodiments provided in the present application, it should be understood that the disclosed system, device and method can be implemented in other ways. For example, the device embodiments described above are merely schematic, for example, the division of units is only a logical function division, and actual implementation can have another division manner, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed.

[0133] In addition, the coupling or direct coupling or communication connection between the units or devices shown or discussed can be indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0134] The units described as separate components can or can not be physically separate, and the components shown as units can or can not be physical units, that is, they can be located in one place, or can be distributed on a plurality of network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment scheme.

[0135] In addition, the functional units in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit.

[0136] If the functions are realized in the form of software function units and sold or used as independent products, they can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the present application or the essential part or part of the technical solutions of the present application can be embodied in the form of software product, and the computer software product is stored in a storage medium, including a plurality of instructions for making a computer device (which can be a personal computer, a server, or a network device, etc.) execute all or part of the steps of the method of each embodiment of the present application. The foregoing storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), magnetic disk or optical disk and various program code storage media.

[0137] The above detailed description of the application, features and effects of the application is based on the embodiments shown in the drawings, and the above is only the preferred embodiment of the application, but the application is not limited to the embodiments shown in the drawings. Any changes or modifications made in accordance with the concept of the application, or equivalent embodiments with equivalent changes, are still within the scope of the application.

Claims

1. A method of designing a resonator cavity, characterized by, The method comprises: obtaining a first layout and a second layout of a resonant cavity, the second layout being constructed based on the first layout and a parameter associated with manufacturing of the resonant cavity, the second layout having a difference with the first layout determined depending on the parameter; simulating the first layout and the second layout respectively to determine attribute values of target attributes of the resonant cavity, the attribute values being used to evaluate the difference and comprising a first value of the first layout and a second value of the second layout; and correcting the first layout based on a target amount determined from the parameter according to the first value and the second value to obtain a target layout of the resonant cavity. The method of correcting the first layout based on the target amount determined from the parameter according to the first value and the second value to obtain the target layout of the resonant cavity comprises:

2. The method of designing a resonator cavity according to claim 1, wherein, taking the first value as a reference value, and correcting the first layout based on a difference between the first value and the second value to obtain the target layout of the resonant cavity. The method of correcting the first layout based on the target amount determined from the parameter according to the first value and the second value to obtain the target layout of the resonant cavity comprises:

3. The method of designing a resonator cavity of claim 2, wherein, when the difference between the first value and the second value is not zero, determining a compensation amount of the target amount according to the difference, and correcting the first layout based on the compensated target amount, and taking the corrected first layout as the target layout; or when the difference between the first value and the second value is zero, the first layout does not need to be corrected, and the uncorrected first layout is taken as the target layout. The parameter is a parameter set composed of at least two observation amounts, and the target amount is at least one observation amount in the at least two observation amounts. Or, the target attribute is a single attribute, and is a cavity frequency or a quality factor of the resonant cavity.

4. The method of designing a resonator cavity of claim 1, wherein, Or, the target attribute is multiple attributes, and is a cavity frequency and a quality factor of the resonant cavity, the first value comprises a first cavity frequency and a first quality factor, and the second value comprises a second cavity frequency and a second quality factor. The first layout and the second layout are respectively provided with a coupling structure, and the coupling structure comprises a read line and the resonant cavity coupled to each other. The parameter comprises a structure parameter of the coupling structure, and the difference is that a value of the structure parameter of the first layout is different from a value of the structure parameter of the second layout.

5. The method of designing a resonator cavity of claim 1, wherein, The structure parameter comprises a coupling distance of the read line and the resonant cavity. The read line and the resonant cavity are respectively coplanar waveguide transmission lines, the structure parameter comprises a width and / or a spacing, the width is a width of a central strip of the coplanar waveguide transmission line, and the spacing is a spacing between the central strip and a ground strip of the coplanar waveguide transmission line.

6. The method of designing a resonator cavity of claim 5, wherein, The method comprises:

7. The method of designing a resonator cavity according to claim 5 or 6, characterized in that, obtaining a first layout and a second layout of a resonant cavity, the second layout being constructed based on the first layout and a parameter associated with manufacturing of the resonant cavity, the second layout having a difference with the first layout determined depending on the parameter; 8. A design apparatus of a resonator cavity, characterized by comprising: simulating the first layout and the second layout respectively to determine attribute values of target attributes of the resonant cavity, the attribute values being used to evaluate the difference and comprising a first value of the first layout and a second value of the second layout; and correcting the first layout based on a target amount determined from the parameter according to the first value and the second value to obtain a target layout of the resonant cavity. The method of correcting the first layout based on the target amount determined from the parameter according to the first value and the second value to obtain the target layout of the resonant cavity comprises: taking the first value as a reference value, and correcting the first layout based on a difference between the first value and the second value to obtain the target layout of the resonant cavity. The method of correcting the first layout based on the target amount determined from the parameter according to the first value and the second value to obtain the target layout of the resonant cavity comprises: when the difference between the first value and the second value is not zero, determining a compensation amount of the target amount according to the difference, and correcting the first layout based on the compensated target amount, and taking the corrected first layout as the target layout; or when the difference between the first value and the second value is zero, the first layout does not need to be corrected, and the uncorrected first layout is taken as the target layout. The parameter is a parameter set composed of at least two observation amounts, and the target amount is at least one observation amount in the at least two observation amounts. Or, the target attribute is a single attribute, and is a cavity frequency or a quality factor of the resonant cavity. Or, the target attribute is multiple attributes, and is a cavity frequency and a quality factor of the resonant cavity, the first value comprises a first cavity frequency and a first quality factor, and the second value comprises a second cavity frequency and a second quality factor. The first layout and the second layout are respectively provided with a coupling structure, and the coupling structure comprises a read line and the resonant cavity coupled to each other. The parameter comprises a structure parameter of the coupling structure, and the difference is that a value of the structure parameter of the first layout is different from a value of the structure parameter of the second layout. The structure parameter comprises a coupling distance of the read line and the resonant cavity. The read line and the resonant cavity are respectively coplanar waveguide transmission lines, the structure parameter comprises a width and / or a spacing, the width is a width of a central strip of the coplanar waveguide transmission line, and the spacing is a spacing between the central strip and a ground strip of the coplanar waveguide transmission line.

9. A storage medium, characterized by The storage medium stores a computer program, and the computer program is configured to implement the design method of the resonant cavity in any one of claims 1 to 7 when executed. 10.A computer device, comprising a memory and a processor, and characterized in that, The memory stores a computer program, and the processor is configured to run the computer program to implement the design method of the resonant cavity in any one of claims 1 to 7.