Component preparation method and system, chip product and equipment

Abstract

The invention discloses a component preparation method and system, a chip product and equipment, and relates to the technical field of micro-nano machining. The method comprises the steps that a first area on the surface of a substrate is etched, the substrate with a groove is formed, and the bottom of the groove is provided with a protruding part; corroding the convex part by adopting a first solution to obtain the substrate with the leveled groove; and evaporating a conductor film layer on the substrate with the leveled groove to obtain the substrate with the first component. In the preparation process of the first component, the convex part on the groove is corroded firstly, and then the conductor film layer is evaporated in the groove based on the leveling treatment, so that the probability that the conductor film layer is broken due to the convex part is reduced, and the preparation stability of the component is effectively improved.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of micro-nano processing, and particularly relate to a component preparation method, system, chip product and device. BACKGROUND

[0002] A Josephson junction is a commonly used quantum bit structure. Taking a superconducting quantum chip as an example, a related technology uses carbon tetrafluoride as an etching gas, adopts a dry etching technology to etch a superconducting thin film on a substrate, forms a groove, and then sequentially constructs a superconductor, an insulator and a superconductor based on the groove to prepare a Josephson junction.

[0003] However, in the dry etching process, the polymer formed by carbon tetrafluoride can make the surface of the groove rough (uneven), and since the scale of the Josephson junction is only 200-300 nanometers, the superconductor is easily broken due to the convex part, so that the prepared Josephson junction is prone to have a broken circuit, thereby causing the preparation stability of the Josephson junction to be not high. SUMMARY

[0004] Embodiments of the present application provide a component preparation method, system, chip product and device. The technical solution is as follows:

[0005] According to an aspect of an embodiment of the present application, a component preparation method is provided, and the method comprises:

[0006] etching a first region of a substrate surface to form a substrate with a groove, the bottom of the groove having a convex part;

[0007] corroding the convex part with a first solution to obtain a substrate with a flattened groove;

[0008] evaporating a conductor film layer on the substrate with the flattened groove to obtain a substrate with a first component.

[0009] According to an aspect of an embodiment of the present application, a component preparation system is provided, and the system comprises: an etching machine, a corrosion machine and an evaporation machine;

[0010] The etching machine is configured to etch a first region of a substrate surface to form a substrate with a groove, the bottom of the groove having a convex part;

[0011] The corrosion machine is configured to corrode the convex part with a first solution to obtain a substrate with a flattened groove;

[0012] The evaporation machine is configured to evaporate a conductor film layer on the substrate with the flattened groove to obtain a substrate with a first component.

[0013] According to an aspect of the embodiments of the present application, a chip product is provided, which comprises the first component prepared by the method.

[0014] According to an aspect of the embodiments of the present application, a device is provided, which comprises the chip product comprising the first component prepared by the method.

[0015] The technical scheme provided by the embodiments of the present application can have the following beneficial effects.

[0016] In the preparation of the first component, after the convex part on the bottom of the groove for preparing the first component is corroded by the first solution to obtain the flattened groove, and then the evaporation of the conductor film layer is performed, the probability of the conductor film layer being broken due to the convex part can be reduced, the influence of the size fluctuation of the convex part on the preparation of the component is effectively reduced, thereby the preparation stability of the component is improved, and the preparation success rate of the component is further improved.

[0017] In addition, as the convex part is eliminated, the contact surface between the substrate (such as the substrate material of the substrate) and the air is also reduced, thereby the TLS (Two Level System) loss of the substrate corresponding to the chip product is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic diagram of a Josephson junction provided by an embodiment of the present application;

[0019] Figure 2 is a schematic diagram of the influence of the convex part on the Josephson junction provided by an embodiment of the present application;

[0020] Figure 3 is a flowchart of a component preparation method provided by an embodiment of the present application;

[0021] Figure 4 is a schematic diagram of a groove before processing provided by an embodiment of the present application;

[0022] Figure 5 is a schematic diagram of a flattened groove provided by an embodiment of the present application;

[0023] Figure 6 is a schematic diagram of a Josephson junction prepared based on the flattened groove provided by an embodiment of the present application;

[0024] Figure 7 is a flowchart of a Josephson junction preparation method provided by an embodiment of the present application;

[0025] Figure 8is a schematic diagram provided by an embodiment of the present application to show the contrast between the pre-processing groove and the post-processing flat groove;

[0026] Figure 9 is a curve diagram provided by an embodiment of the present application to show the relationship between the reflected signal and the phase angle data and the frequency;

[0027] Figure 10 is a schematic diagram of a component preparation system provided by an embodiment of the present application;

[0028] Figure 11 is a schematic diagram of a scheme application scenario provided by an embodiment of the present application. DETAILED DESCRIPTION

[0029] Before introducing the technical scheme of the present application, some terms involved in the present application are explained and described. The following related explanations are optional schemes and can be combined with the technical scheme of the embodiments of the present application in any manner, which all belong to the protection scope of the embodiments of the present application. The embodiments of the present application include at least part of the following contents.

[0030] Superconducting quantum chip: refers to a chip for superconducting quantum computing. The superconducting quantum chip can be prepared based on a superconducting thin film (such as aluminum (Al), niobium (Nb), titanium nitride (TiN), or tantalum) deposited on a substrate such as silicon (Si) or sapphire Al2O3 (aluminum oxide). The first layer of film deposited on the substrate is also commonly referred to as the bottom film of the superconducting quantum chip. If the film layer is aluminum, the chip can be referred to as an aluminum-based superconducting quantum chip, if the film layer is tantalum, the chip can be referred to as a tantalum-based superconducting quantum chip, and so on. In the embodiments of the present application, the substrate and the bottom film are collectively referred to as the substrate.

[0031] The superconducting quantum chip is composed of components, such as a read line, a resonant cavity, a bit capacitor, a control line, an air bridge, a Josephson junction, an indium post solder joint, a deep hole, etc. These components can also be prepared from a superconducting thin film by photolithography and other processes.

[0032] Superconducting: refers to a property of a material, below a certain temperature, the resistance of the material with this property suddenly changes to 0, and has perfect diamagnetism.

[0033] Air bridge: a component in a superconducting quantum chip, having a structure similar to an arch bridge.

[0034] Josephson Junction: A component in a superconducting quantum chip, with a sandwich stack structure formed by superconductor-insulator-superconductor, also known as superconducting tunnel junction, the two superconductors are connected by an insulator. Josephson junction is generally composed of two superconductors sandwiched with a very thin barrier layer (thickness ≤ coherence length of Cooper electron pairs), such as S (Superconductor)-I (semiconductor or insulator (Insulator))-S (superconductor) structure, abbreviated as SIS. In Josephson junction, superconducting electrons can pass through the semiconductor or insulator thin film from one side to the other side by tunneling effect.

[0035] TLS (Two Level System) loss: refers to the loss of two-level system in superconducting quantum chip material, due to the interaction between two-level system and microwave in quantum chip, thus shortening the relaxation time of quantum bits.

[0036] Etching: A microfabrication process that selectively removes materials by physical or chemical methods to achieve the designed structure pattern. Etching includes dry etching and wet etching. Dry etching is to etch away the part to be removed on the superconducting film using plasma, and wet etching is to etch away the part to be removed on the material using etching liquid.

[0037] Insitu: Multiple processes are carried out in a single vacuum chamber or multiple interconnected vacuum chambers without being taken to the atmospheric environment.

[0038] Photoresist: A gel-like substance that undergoes chemical changes and solubility differences when exposed to ultraviolet light or electron beam bombardment (i.e. photolithography), so that the desired pattern can be prepared.

[0039] Substrate: refers to the base for evaporating thin films (such as tantalum film) on it, such as the above-mentioned silicon (Si), sapphire, etc.

[0040] In some embodiments, superconducting quantum chips based on silicon substrates are increasingly valued due to their good compatibility with the semiconductor field. Currently, the main processes for etching superconducting films on silicon substrates are wet etching and dry etching. Because wet etching has poor directionality and large processing error, it cannot process fine structures, and currently wet etching has been basically replaced by dry etching.

[0041] For superconducting thin films, commonly used are aluminum film, niobium film and tantalum film. Among them, tantalum film has been widely used in the preparation of superconducting quantum chips due to less TLS loss. In the process of etching tantalum film using dry etching, the etching gas is usually sulfur hexafluoride or carbon tetrafluoride. Since sulfur hexafluoride reacts violently with silicon, it will cause a lot of over-etching, so it is not suitable for etching silicon-based films.

[0042] In contrast, carbon tetrafluoride will form CxFy polymers during etching, which will be adsorbed on the silicon substrate to prevent over-etching of silicon, so carbon tetrafluoride is more suitable for etching superconducting thin films on the silicon substrate. However, it is found that the presence of polymers makes the etched silicon very rough, which will affect the preparation of subsequent components involving the silicon substrate, such as Josephson junctions, resonant cavities (commonly used design in superconducting quantum chips), and any components in the preparation process involving the etched substrate.

[0043] Taking Josephson junction as an example, refer to Figure 1 which shows a schematic diagram of the Josephson junction provided by an embodiment of the present application. The resonant cavity 100 includes a joint 101, a read line 102, a resonant cavity body 103 and a Josephson junction 104. Among them, the joint 101 can be connected to the joint on the chip product and the pin on the sample box by wire bonding. The read line 102 can be used to couple the microwave signal into the quantum bit. The resonant cavity body 103 is usually a two-dimensional resonant cavity composed of coplanar waveguide in superconducting quantum chips. The Josephson junction 104 has the characteristic of nonlinear inductance, which can make the circuit have nonlinear energy level to encode the quantum bit. The Josephson junction 104 is in the form of a sandwiched stacked layer structure of superconductor-insulator-superconductor.

[0044] After etching the groove for preparing the Josephson junction using carbon tetrafluoride, the groove has a silicon substrate as the bottom. Since the polymer formed by carbon tetrafluoride is adsorbed on the silicon substrate, the silicon substrate is etched unevenly, so that the bottom of the groove becomes very rough (uneven), with a protruding part formed by silicon. Since the size of Josephson (such as the thickness of superconductor) is only 200-300 nanometers, the superconductor is easily affected by the protruding part and broken, so that the prepared Josephson junction is prone to have a broken circuit, thereby causing the preparation stability of the Josephson junction to be not high. In addition, the rough groove also increases the contact surface between the silicon substrate and the air, which will bring more TLS loss.

[0045] Refer to Figure 2Figure 1 shows a schematic diagram of the effect of the protruding part on the Josephson junction according to an embodiment of the present application. The substrate includes a substrate 201 (such as a silicon substrate) and a bottom film 202 (such as a superconducting thin film layer in a superconducting quantum chip), the Josephson junction includes a superconductor 203, an insulator 205 and a superconductor 206, the superconductor 203 and the superconductor 206 are superconducting metal thin films (such as aluminum films), and during the process of etching a groove for preparing the Josephson junction on the substrate, the compound formed by the etching gas will be adsorbed on the substrate 201, so that the substrate 201 is etched unevenly, for example, the substrate covered by the polymer is not etched, and the substrate not covered by the polymer is etched, thereby causing the bottom of the groove to have a protruding part 204.

[0046] For the protruding part 204 with small relief (i.e. small height), the superconductor 203 / superconductor 206 is less affected during evaporation, and a better connection can still be achieved without affecting the operation of the Josephson junction, while for the protruding part 204 with large relief (i.e. large height), the superconductor 203 / superconductor 206 is greatly affected during evaporation, and there is a certain probability of open circuit, thereby causing the Josephson junction to fail, for example, the superconductor 206 is affected by the protruding part 204 corresponding to the region 207 and is open-circuited.

[0047] For the related technology for obtaining a groove with small roughness, the following disadvantages are summarized:

[0048] 1. By optimizing the etching parameters, a groove with small roughness is obtained, for example, by controlling the gas flow, pressure, power and other parameters to obtain a groove with small roughness, but the improvement of this method is limited.

[0049] 2. By applying a bias to the sample (i.e. the above substrate) during the etching process using carbon tetrafluoride, the polymer is quickly removed, but this method significantly increases the over-etching degree of the silicon substrate.

[0050] 3. By adding an end-point detection function to the equipment, that is, after the superconducting thin film is etched, the equipment will detect the spectrum of the silicon substrate at this time, and the etching is stopped. However, this function requires the silicon to have a large enough exposed area, and for smaller samples or samples with smaller pattern areas, this method cannot be used.

[0051] The technical solution provided by the embodiments of the present application does not need to optimize the etching parameters, does not need to apply a bias, and does not need to add an end-point detection function, but only by the first solution can the protruding part on the groove be effectively removed, thereby stably preparing the component and improving the preparation success rate of the component.

[0052] The technical scheme provided in the embodiments of the present application can be applied to any scene in which a conductor thin film needs to be evaporated on an etched substrate, such as a Josephson junction preparation scene on a chip product (such as a superconducting quantum chip, a quantum chip, or the like), a resonant cavity preparation scene, and the like, and the embodiments of the present application do not limit this.

[0053] In the following, the technical scheme provided in the present application will be introduced and described through method embodiments, and the content not described in the embodiments of the present application can refer to the above embodiments, which will not be described here again.

[0054] Please refer to Figure 3 which shows a flowchart of a component preparation method provided in an embodiment of the present application. The method can include steps 301 to 303.

[0055] Step 301, etching a first region of a substrate surface to form a substrate with a groove, the bottom of the groove having a protruding portion.

[0056] The substrate in the embodiments of the present application can refer to a substrate evaporated with a bottom layer film, such as a silicon substrate evaporated with a superconducting thin film. The substrate can refer to a substrate of a chip product to be prepared, and the chip product can be a semi-finished product in the preparation process of a final finished chip, such as a semi-finished product to be prepared as a first component.

[0057] The substrate can be at least one of the following: a sapphire substrate, a silicon substrate. The bottom layer film can be at least one of the following: an aluminum film, a tantalum film, a niobium film. The bottom layer film can be used to prepare a bottom layer circuit, which can be composed of at least one of the following: a coplanar waveguide, a read line, a resonant cavity, a bit capacitor, a control line, an air bridge, a Josephson junction, an indium post solder joint, a deep hole. Alternatively, the bottom layer circuit can be prepared by means of photolithography-development-deposition. Or, the above-mentioned bottom layer circuit can also be prepared by means of film plating-photolithography-etching. Or, the above-mentioned bottom layer circuit can also be prepared by means of nanoimprinting, and the embodiments of the present application do not limit this.

[0058] The substrate surface can refer to the surface of the bottom layer film, such as the surface of the superconducting thin film. The first region refers to the region occupied by the groove to be prepared on the substrate. The area of the first region can be the same as the area of the groove, and the position of the first region coincides with the position of the groove.

[0059] The above-mentioned groove is used to prepare a first component, that is, the first component can be referred to as a sunken component. The first component is not limited in the embodiments of the present application, which can be, for example, a Josephson junction, a resonant cavity, and any component that needs to be evaporated on an etched substrate.

[0060] The depth of the groove can be determined according to the size of the first component. For example, the depth of the groove can be determined according to the thickness of the first component. For example, when the first component is a Josephson junction, the depth of the groove can be determined according to the thickness of the superconductor of the Josephson junction, i.e., the depth of the groove is the same as the thickness of the superconductor of the Josephson junction.

[0061] In one example, the groove is inverted trapezoidal, i.e., the size of the upper opening is larger than the size of the lower opening. The groove can be composed of two parts, one part is the bottom film on the substrate, and the other part is the substrate, i.e., the bottom film in the first region is completely etched, and part of the material on the substrate in the first region is etched, thereby forming the groove.

[0062] In one example, a dry etching process can be used to etch the first region of the substrate surface to form a substrate with a groove.

[0063] For example, a photoresist is used to uniformly coat the substrate and perform photolithography on the first region to define the first region, and then carbon tetrafluoride is used as an etching gas to etch the first region. After the bottom film in the first region is completely etched, the substrate in the first region is also etched, thereby obtaining the groove.

[0064] The polymer formed by the reaction of the etching gas used in the dry etching process and the substrate material is adsorbed on the exposed substrate on the substrate surface, and the area of the substrate covered by the polymer is not etched to form a raised portion, i.e., the raised portion is composed of the substrate material.

[0065] For example, the polymer formed by the reaction of carbon tetrafluoride and the silicon substrate is adsorbed on the exposed silicon substrate on the substrate surface, and the area of the silicon substrate covered by the polymer is not etched to form a raised portion, i.e., the raised portion is composed of silicon. The raised portion is higher than the bottom surface of the groove, and the area of the substrate not covered by the polymer is etched by the etching gas, thereby making the raised portion more obvious.

[0066] For example, referring to Figure 4 For a substrate with a substrate 401 and a bottom film 402, a dry etching process is used to etch the first region of the substrate surface to form a substrate with a groove. The side surface of the groove is composed of the substrate 401 and the bottom film 402, the bottom of the groove is composed of the etched substrate 401, and the bottom of the groove has a raised portion 403 composed of the substrate material. It should be noted that the raised portion 403 is adaptively enlarged in the embodiments of the present application to visualize the influence of the raised portion 403 on the conductor film layer.

[0067] In step 302, the raised portion is corroded by a first solution to obtain a substrate with a flattened groove.

[0068] The flattened recess refers to the recess after the flattening treatment. The first solution can react with the substrate material to achieve corrosion of the protruding part, and then the protruding part is dissolved to obtain the flattened recess. Alternatively, the flattened recess can refer to a recess whose protruding part has a height less than a height threshold, which can be determined based on the size of the first component to ensure that the surface of the first component does not have a short circuit due to the protruding part. For example, the surface of the flattened recess is approximately flat, and the first solution is used for flattening treatment of the surface of the recess, and the flattening treatment refers to the process of dissolving the protruding part.

[0069] The embodiments of the present application do not limit the first solution, which can be set and selected according to actual use requirements. For example, the protruding part is formed by the substrate material of the substrate, and any solution that can react with the substrate material, react slowly with the oxide layer of the substrate material, and does not damage the bottom film can be used as the first solution.

[0070] For example, in the case of a silicon substrate, the first solution can be tetramethylammonium hydroxide, abbreviated as TMAH. TMAH is a white crystal with strong alkalinity and is easily soluble in water and organic solvents to obtain the first solution. TMAH is stable at a temperature not exceeding the decomposition point and is easy to remove without pollution.

[0071] TMAH has strong oxidizing properties, and TMAH solution can selectively etch silicon. For example, in anisotropic etching, the etching rate depends on the atomic density and interface density on the crystal surface, that is, for different crystal surfaces, the etching rate of the TMAH solution is different.

[0072] In one example, the substrate with the recess can be placed in the first solution for immersion to corrode the protruding part and obtain a substrate with a flattened recess. Since the first solution does not corrode the bottom film, the immersion of the substrate in the first solution will not damage the bottom film (bottom circuit). In addition, since the reaction between the first solution and the oxide layer of the substrate material is slow, controlling the immersion time of the substrate in the first solution within an appropriate range can also prevent the first solution from damaging the bottom film.

[0073] Due to the influence of the crystal surface, the etching rate between the first solution and the protruding part is greater than the etching rate between the first solution and the other parts of the bottom, so that the protruding part can be quickly corroded and dissolved, while the other parts of the bottom are slowly corroded, thereby reducing the height difference between the protruding part and the other parts of the bottom, and making the surface of the recess tend to be flat and smooth, and the conductor film evaporated thereon is less likely to be short-circuited, thereby effectively improving the success rate of component preparation.

[0074] In one example, since the protrusion is formed from the substrate material of the substrate, and the reaction between the first solution and the oxide layer of the substrate material is slow (e.g., the reaction rate between TMAH and silicon dioxide is one-thousandth that between TMAH and silicon), the second solution can be used to remove the oxide layer on the surface of the substrate with grooves before immersing the substrate with grooves in the first solution, thereby increasing the corrosion rate of the protrusion.

[0075] The second solution is used to remove the oxide layer on the surface of the groove. For example, the second solution can be used to clean the groove to remove the oxide layer on its surface without removing all the oxide layer on the substrate surface. In a feasible example, the second solution can also be used only to clean the raised portions to remove the oxide layer on their surfaces. After the oxide layer on the raised portions is removed, the first solution can quickly corrode the raised portions, thereby improving the processing efficiency of the groove.

[0076] The embodiments of this application do not limit the second solution, which can be set and selected according to actual usage requirements. For example, when the substrate material is silicon, the second solution can be hydrofluoric acid, which reacts with the oxide layer (i.e., silicon dioxide) to remove the oxide layer. For instance, a 2% concentration of hydrofluoric acid can be used to clean the groove for 2 minutes to obtain a groove with the surface oxide layer removed.

[0077] Optionally, within a first time period after removing the oxide layer on the surface of the groove, the raised portion is etched with a first solution to obtain a substrate with a leveled groove, in order to prevent the surface of the groove from being oxidized again, thereby affecting the corrosion rate of the raised portion.

[0078] In one example, the first duration is less than or equal to 2 minutes. For example, after the oxide layer on the surface of the groove is removed, the substrate with the groove can be immediately (e.g., within 1 minute) immersed in the first solution.

[0079] In one example, the substrate with grooves is immersed in the first solution for a period of 1 to 3 minutes, which can prevent the substrate in the first region from being over-etched and the oxide layer on the substrate surface outside the first region from being over-etched while the protrusions are etched away.

[0080] For example, the substrate with the groove can be removed after immersing it in the first solution for 2 minutes. Alternatively, the first solution can be placed in a container, such as a glass container, which is not easily corroded by the first solution.

[0081] Optionally, the temperature of the first solution also affects the etching efficiency of the protruding part. For example, the higher the temperature of the first solution, the faster the etching efficiency of the protruding part is under the same soaking time. By controlling the temperature of the first solution within a proper range, the removal efficiency of the protruding part can be improved.

[0082] For example, the temperature of the first solution is between 60 degrees Celsius and 80 degrees Celsius. Optionally, the temperature of the first solution can be maintained between 60 degrees Celsius and 80 degrees Celsius by a hot plate. The hot plate can be used for heating.

[0083] For example, the temperature of the first solution can be adjusted to 80 degrees Celsius by a hot plate before the substrate is soaked in the first solution, and the temperature of the first solution can be controlled at 80 degrees Celsius by the hot plate during the process of soaking the substrate in the first solution.

[0084] Optionally, the concentration of the first solution also affects the etching efficiency of the protruding part. For example, the faster the etching efficiency of the protruding part, the slower the etching efficiency of the protruding part is with the increase of the concentration of the first solution. By controlling the concentration of the first solution within a proper range, the removal efficiency of the protruding part can be improved.

[0085] For example, the concentration of the first solution is between 24% and 26%. For example, the first solution with a concentration of 25% can be prepared by using TMAH, that is, the protruding part is etched by the first solution with a concentration of 25%.

[0086] For example, referring to Figure 4 and 5 In the case that the material of the substrate 401 is silicon, a TMAH solution with a concentration of 25% and a temperature of 80 degrees Celsius can be used to soak the substrate with a groove for 1 minute, so that the protruding part 403 on the bottom of the groove is dissolved, and a groove with a smooth surface, that is, a flattened groove, is obtained.

[0087] In step 303, a conductor film layer is evaporated on the substrate with the flattened groove, and a substrate with a first component is obtained.

[0088] In the embodiments of the present application, the first component is constructed based on the groove, and a preparation area corresponding to the first component includes a first area. For example, the preparation area corresponding to the first component is larger than the first area, and the preparation area refers to the area occupied by the first component on the substrate.

[0089] Evaporating a conductor film layer on the substrate with the flattened groove can refer to evaporating a conductor film layer on the above preparation area to obtain a substrate with a first component. For example, the first component is constructed by a conductor film layer, and all or part of the conductor film layer is located in the groove. The shape, size, and position of the conductor film layer can be determined according to the first component.

[0090] The material of the conductor film is not limited in the embodiments of the present application. For example, the conductor film can be a metal film, such as an aluminum film, a tantalum film, etc. For example, when the first component is a Josephson junction, the material of the conductor film can be aluminum.

[0091] In one example, the first component includes a Josephson junction, and the conductor film includes a first metal film layer and a second metal film layer. The step 303 can further include the following contents:

[0092] 1. Evaporating the first metal film layer in a second region of the substrate surface with the flattened recess.

[0093] The second region is used to prepare the superconductor of the Josephson junction, such as the superconductor at the bottom of the structure corresponding to the Josephson junction. The first metal film layer can form the superconductor of the Josephson junction. The material of the first metal film layer can be aluminum. The length and thickness of the first metal film layer can be determined based on the size of the Josephson junction.

[0094] For example, referring to Figure 6 The aluminum film can be deposited in the second region in the film plating chamber by the electron beam evaporation method to form the first metal film layer 404. Since the protruding part at the bottom of the recess is eliminated, the first metal film layer 404 has a low probability of being disconnected, which is beneficial to improve the success rate of preparing the Josephson junction. Part of the first metal film layer 404 is located in the recess, and another part of the first metal film layer 404 is located outside the recess, such as on the bottom film 402.

[0095] 2. Preparing an insulator in a third region on the first metal film layer.

[0096] The third region is used to prepare the insulator of the Josephson junction. The third region includes one end of the first metal film layer located in the recess. Optionally, the insulator can be directly deposited in the third region. The first metal film layer in the third region can be directly oxidized to form an oxide layer, which is the insulator. The preparation method of the insulator is not limited in the embodiments of the present application.

[0097] For example, referring to Figure 6 The substrate can be transferred into an oxidation chamber, and oxygen is introduced to oxidize the first metal film layer in the third region to obtain the insulator 405 (such as aluminum oxide). The regions outside the third region can be shielded by photoresist to prevent oxidation. The insulator 405 can also be formed by the inclined angle film plating process in the third region.

[0098] 3. Evaporating the second metal film layer in a fourth region of the substrate surface with the flattened recess to obtain a substrate with a Josephson junction.

[0099] The Josephson junction is composed of a first metal film layer, an insulating layer and a second metal film layer. The second metal film layer is made of the same material as the first metal film layer.

[0100] The fourth region is used to prepare a superconductor of the Josephson junction, such as a superconductor located at the upper part of a structure corresponding to the Josephson junction. The second metal film layer can form another superconductor of the Josephson junction. The length, thickness and the like of the second metal film layer can be determined based on the size of the Josephson junction.

[0101] Optionally, the third region is an overlapping region between the fourth region and the second region, and the third region is located in the flattened groove, that is, the second metal film layer covers the insulating layer at one end in the groove, and the second metal film layer covers the bottom film at the other end out of the groove.

[0102] Reference Figure 6 The method of electron beam evaporation can be used to deposit an aluminum film in the fourth region in a film plating chamber to form the second metal film layer 406. Since the protruding part at the bottom of the groove is eliminated, the second metal film layer 406 has a low probability of being disconnected, which is conducive to improving the success rate of preparation of the Josephson junction. Part of the second metal film layer 406 is located in the groove, and the other part of the second metal film layer 406 is located outside the groove, such as on the bottom film 402, so as to form a superconductor-insulator-superconductor structure and obtain a substrate with a Josephson junction.

[0103] In summary, the technical scheme provided by the embodiments of the present application can reduce the probability of disconnection of the conductor film layer due to the protruding part after the protruding part at the bottom of the groove for preparing the first component is etched by using the first solution to obtain the flattened groove and then the evaporation of the conductor film layer is performed. The influence of the size fluctuation of the protruding part on the preparation of the component is effectively reduced, which is conducive to improving the preparation stability of the component and further improving the success rate of preparation of the component.

[0104] In addition, as the protruding part is eliminated, the contact surface between the substrate (such as the substrate material of the substrate) and the air is also reduced, which is conducive to reducing the TLS (Two Level System) loss of the chip product corresponding to the substrate.

[0105] In some embodiments, the technical scheme provided by the embodiments of the present application is described by taking the preparation of the Josephson junction on the superconducting quantum chip as an example, and reference is made to Figure 7 The embodiments of the present application can also include the following contents:

[0106] 1. Clean the oxide layer on the substrate with hydrofluoric acid.

[0107] The substrate can be a silicon substrate used for preparing a superconducting quantum chip. The substrate can be cleaned with 2% hydrofluoric acid for 2 minutes to remove the oxide layer on the substrate, such as the oxide layer formed by silicon dioxide.

[0108] Alternatively, the oxide layer on the substrate can also be removed by ion milling or the like.

[0109] 2. Forming a superconducting thin film (i.e., the bottom layer film) on the substrate.

[0110] Alternatively, the superconducting tantalum film can be grown on the substrate by magnetron sputtering. For example, a pure alpha-phase tantalum film can be formed on the substrate by using a magnetron sputtering device, which is a device prepared by using a magnetron sputtering technique.

[0111] 3. Etching the bottom layer structure, which includes a groove for preparing a Josephson junction.

[0112] Alternatively, a pattern for preparing a bottom layer circuit can be photoetched on the superconducting thin film, and then the tantalum film in the exposed area can be etched and removed by using carbon tetrafluoride, and then the photoresist on the substrate can be removed, thereby obtaining the bottom layer structure of the superconducting quantum chip, such as the bottom layer structure which can include a transmission line, a resonant cavity, a capacitor, and the like on the superconducting quantum chip, and a groove for preparing a Josephson junction.

[0113] Due to the influence of the compound formed by carbon tetrafluoride, a protruding part exists on the bottom of the groove.

[0114] 4. Removing the oxide layer on the surface of the groove.

[0115] Since the reaction speed between TMAH and silicon dioxide is one thousandth of the reaction speed between TMAH and silicon, the oxide layer on the surface of the groove needs to be removed first to improve the removal efficiency of the protruding part.

[0116] Alternatively, the oxide layer on the surface of the groove can be removed by using 2% hydrofluoric acid to clean the groove for 2 minutes.

[0117] Alternatively, the oxide layer on the surface of the groove can also be removed by ion milling or the like.

[0118] 5. Placing the substrate into the TMAH solution for soaking.

[0119] Alternatively, after the oxide layer on the surface of the groove is removed, the substrate is quickly (e.g., within 1 minute) placed into the TMAH solution for processing, so as to prevent the surface of the groove from being oxidized again and thereby affecting the removal efficiency of the protruding part. For example, the substrate can be placed into a TMAH solution with a concentration of 25% and a temperature of 80 degrees Celsius for soaking for 1 minute, thereby removing the protruding part on the bottom of the groove and obtaining a groove with a surface that is approximately flat (i.e., the groove after the flattening treatment).

[0120] For example, referring to Figure 8 , for the pre-processing groove 801, the surface of the groove is in a rough gully morphology, that is, has protruding parts. Compared with the pre-processing groove 801, the surface of the post-processing groove 802 is changed from the originally rough gully morphology to an approximately flat and smooth plain morphology. Thus, the situation that the Josephson junction may be broken is effectively solved, thereby improving the success rate of preparation of the Josephson junction. In addition, from Figure 8 , it can be seen that the TMAH solution has no effect on the tantalum film.

[0121] For example, referring to Figure 9 , in order to verify the reduction of TLS loss after the groove is smoothed, the present application measures the quality factor (Q value) of a single photon of a two-dimensional resonant cavity at low temperature. Curve 901 is a relationship curve between frequency and reflection signal corresponding to the pre-processing groove, curve 902 is a relationship curve between frequency and phase angle corresponding to the pre-processing groove, curve 903 is a relationship curve between frequency and reflection signal corresponding to the post-processing groove, and curve 904 is a relationship curve between frequency and phase angle corresponding to the post-processing groove.

[0122] The resonant cavity Q value corresponding to curve 901 and curve 902 is about 2.3*106, and the resonant cavity Q value corresponding to curve 903 and curve 904 is about 2.1*107. It can be obviously seen that the Q value of the resonant cavity corresponding to the post-processing groove is increased by more than 9 times compared with the pre-processing groove.

[0123] Therefore, the post-processing groove can effectively improve the success rate of preparation of the Josephson junction, and can effectively reduce the contact area of the substrate and the air, thereby reducing the TLS loss of the superconducting quantum chip, and can also improve the quality factor of the resonant cavity, so that the resonant cavity single photon Q value reaches more than 20 million, thereby effectively improving the performance of the superconducting quantum chip.

[0124] 6. Preparing a Josephson junction based on the post-processing groove.

[0125] Optionally, an electron beam evaporation process and an inclined angle film plating process are used to prepare a Josephson junction based on the post-processing groove, so as to complete the preparation of the superconducting quantum chip.

[0126] Exemplarily, in the process of preparing the Josephson junction, first, an electron beam evaporation process is used to deposit a first superconductor on the post-processing groove by using aluminum, then an insulator is prepared on the first superconductor by using an inclined angle film plating process, and finally, a second superconductor is prepared by plating an aluminum film in a film plating chamber again, so as to form a superconductor-insulator-superconductor structure and obtain the Josephson junction.

[0127] In conclusion, the technical scheme provided by the embodiment of the present application can reduce the probability of the fracture of the metal film layer due to the protruding part after the protruding part on the bottom of the groove for preparing the Josephson junction is removed by using the TMAH solution and then the evaporation of the metal film layer is performed, effectively reduces the influence of the size fluctuation of the protruding part on the preparation of the Josephson junction, and thus is beneficial to improving the preparation stability of the Josephson junction and further improving the success rate of the preparation of the Josephson junction.

[0128] In addition, as the protruding part is eliminated, the contact area between the substrate (such as the substrate material of the substrate) and the air is also reduced, thereby being beneficial to reducing the TLS (Two Level System) loss of the chip product corresponding to the substrate.

[0129] Figure 10 A schematic diagram of a component preparation system provided by an embodiment of the present application is shown, which can be implemented as a production line device. As shown in the figure, the component preparation system includes an etching machine 1001, an etching machine 1002 and an evaporation machine 1003. Figure 10

[0130] The etching machine 1001 is used to etch the first area of the substrate surface to form a substrate with a groove, and the bottom of the groove has a protruding part.

[0131] The etching machine 1002 is used to etch the protruding part by using a first solution to obtain a substrate with a flattened groove.

[0132] The evaporation machine 1003 is used to evaporate a conductor film layer on the substrate with the flattened groove to obtain a substrate with a first component.

[0133] In some embodiments, the etching machine 1002 is also used to soak the substrate with the groove in the first solution to etch the protruding part to obtain the substrate with the flattened groove.

[0134] In some embodiments, the soaking time of the substrate with the groove in the first solution is between 1 minute and 3 minutes.

[0135] In some embodiments, the temperature of the first solution is between 60 degrees Celsius and 80 degrees Celsius.

[0136] In some embodiments, the concentration of the first solution is between 24% and 26%.

[0137] In some embodiments, the protruding part is formed by the substrate material of the substrate, and in the case that the substrate material is silicon, the first solution is tetramethylammonium hydroxide. ​

[0138] In some embodiments, the etching machine 1002 is further configured to remove an oxide layer on the substrate surface with the grooves using a second solution, the oxide layer being formed by oxidation of a substrate material of the substrate.

[0139] In some embodiments, the etching machine 1002 is further configured to perform the step of etching the raised portions using the first solution to obtain a substrate with flattened grooves within a first time period after the removal of the oxide layer, the first time period being less than or equal to 2 minutes.

[0140] In some embodiments, the first component includes a Josephson junction, and the conductor film layer includes a first metal film layer and a second metal film layer; the evaporation machine 1003 is further configured to:

[0141] evaporate the first metal film layer on a second region of the substrate surface with the flattened grooves;

[0142] prepare an insulator on a third region of the first metal film layer;

[0143] evaporate the second metal film layer on a fourth region of the substrate surface with the flattened grooves to obtain a substrate with the Josephson junction, wherein the Josephson junction is formed by the first metal film layer, the insulator, and the second metal film layer, the third region is an overlapping region between the fourth region and the second region, and the third region is located in the flattened grooves.

[0144] In some embodiments, the etching machine 1001 is further configured to etch the first region of the substrate surface using a dry etching process to form the substrate with the grooves; wherein an etching gas used in the dry etching process reacts with a polymer formed by a substrate material of the substrate to be adsorbed on an exposed substrate of the substrate surface, and a region of the substrate covered by the polymer is not etched to form the raised portions.

[0145] Optionally, the production line apparatus further includes a processor electrically connected to the etching machine 1001, the etching machine 1002, and the evaporation machine 1003, respectively, to control the etching machine 1001, the etching machine 1002, and the evaporation machine 1003, etc.

[0146] Optionally, the production line apparatus further includes a power supply to supply power to the processor, the etching machine 1001, the etching machine 1002, and the evaporation machine 1003, etc.

[0147] Optionally, the machines are spatially connected by a conveyor belt, or the movement of the preparation between the machines is completed based on a mechanical arm.

[0148] Optionally, the production line device further comprises a memory, which can be used to store at least one computer instruction, and the processor executes the at least one computer instruction to make the production line device execute the above component preparation method.

[0149] In some embodiments, a computer readable storage medium is also provided, and the computer readable storage medium stores at least one computer instruction. The at least one computer instruction is executed by a processor in a production line device to make the production line device execute the above component preparation method.

[0150] In some embodiments, a computer program product is also provided, and the computer program product comprises computer instructions stored in a computer readable storage medium. A processor of a production line device reads the computer instructions from the computer readable storage medium, and the processor executes the computer instructions to make the production line device execute the above component preparation method.

[0151] In some embodiments, a chip product is also provided, and the chip product comprises a first component prepared by using the above method.

[0152] Optionally, the chip product is used to prepare a superconducting quantum chip, or the chip product is a superconducting quantum chip.

[0153] In some embodiments, an apparatus is also provided, and the apparatus comprises a chip product comprising a first component prepared by using the above method.

[0154] To sum up, the technical scheme provided by the embodiments of the present application can reduce the probability of breaking of the conductor film layer due to the protruding part during the evaporation of the conductor film layer after the protruding part on the bottom of the groove for preparing the first component is corroded by using the first solution to obtain the flattened groove, effectively reduce the influence of the size fluctuation of the protruding part on the preparation of the component, thereby facilitating to improve the preparation stability of the component, and further facilitating to improve the preparation success rate of the component.

[0155] In addition, with the elimination of the protruding part, the contact area between the substrate (such as the substrate material of the substrate) and the air is also reduced, thereby facilitating to reduce the TLS (Two Level System) loss of the substrate corresponding to the chip product.

[0156] For reference Figure 11 , which shows a schematic diagram of a scheme application scenario provided by an embodiment of the present application. As Figure 11 shown, the application scenario can be a superconducting quantum computing platform, and the application scenario comprises a quantum computing device 1101, a dilution refrigerator 1102, a control device 1103, and a computer 1104.

[0157] The quantum computing device 1101 is a circuit acting on physical qubits, and the quantum computing device 1101 can be implemented into a quantum chip, such as a superconducting quantum chip near absolute zero. The quantum chip can be prepared by the scheme shown in the above embodiments of the present application. The dilution refrigerator 1102 is used to provide an absolute zero degree environment for the superconducting quantum chip.

[0158] The control device 1103 is used to control the quantum computing device 1101, and the computer 1104 is used to control the control device 1103. For example, a well-written quantum program is compiled into instructions by software in the computer 1104 and sent to the control device 1103 (such as an electronic / microwave control system), and the control device 1103 converts the above instructions into electronic / microwave control signals and inputs them to the dilution refrigerator 1102 to control the superconducting qubits at a temperature less than 10 mK. The reading process is reversed, and the read waveform is delivered to the quantum computing device 1101.

[0159] It should be noted that the embodiments of the present application can display a prompt interface, a pop-up window or output voice prompt information before collecting the relevant data of the user and during the process of collecting the relevant data of the user. The prompt interface, the pop-up window or the voice prompt information is used to prompt the user that the relevant data of the user is currently being collected, so that the present application only starts to perform the related steps of obtaining the relevant data of the user after obtaining the confirmation operation of the user to the prompt interface or the pop-up window, otherwise (i.e. without obtaining the confirmation operation of the user to the prompt interface or the pop-up window), ending the related steps of obtaining the relevant data of the user, i.e. not obtaining the relevant data of the user. In other words, all the user data collected by the present application is strictly processed according to the requirements of the relevant national laws and regulations, and the informed consent or separate consent of the personal information subject is collected under the condition of the consent and authorization of the user, and the subsequent data use and processing behavior is carried out within the authorization range of the laws and regulations and the personal information subject, and the collection, use and processing of the relevant user data need to comply with the relevant laws and regulations and standards of the relevant countries and regions. For example, the soaking time, the first time, the concentration and the temperature involved in the present application are obtained under sufficient authorization.

[0160] It should be understood that "multiple" mentioned herein refers to two or more than two. The "and / or" describes the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B can represent the following three cases: A exists alone, A and B exist together, and B exists alone. The character " / " generally represents that the associated objects before and after it are in an "or" relationship. In addition, the step numbers described herein only exemplarily show a possible execution order between steps, and in some other embodiments, the above steps can also be executed in a non-numbered order, such as two different numbered steps being executed at the same time, or two different numbered steps being executed in an order opposite to that shown in the figure, and the embodiments of the present application are not limited in this regard.

[0161] The above only describes exemplary embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method of manufacturing a component, characterized by, The method comprises: etching a first region of a substrate surface to form a substrate with a groove, the bottom of the groove having a protruding portion; corroding the protruding portion with a first solution to obtain a substrate with a flattened groove; evaporating a conductor film layer on the substrate with the flattened groove to obtain a substrate with a first component.

2. The method of claim 1, wherein, The corroding the protruding portion with a first solution to obtain a substrate with a flattened groove comprises: immersing the substrate with the groove in the first solution to corrode the protruding portion to obtain the substrate with the flattened groove.

3. The method of claim 2, wherein, The immersion time of the substrate with the groove in the first solution is between 1 minute and 3 minutes.

4. The method according to any one of claims 1 to 3, characterized in that, The temperature of the first solution is between 60 degrees Celsius and 80 degrees Celsius.

5. The method according to any one of claims 1 to 4, characterized in that, The concentration of the first solution is between 24% and 26%.

6. The method according to any one of claims 1 to 5, characterized in that, The protruding portion is formed by a substrate material of the substrate, and in the case that the substrate material is silicon, the first solution is tetramethylammonium hydroxide.

7. The method according to any one of claims 1 to 6, characterized in that, The corroding the protruding portion with a first solution to obtain a substrate with a flattened groove further comprises: removing an oxide layer on the surface of the substrate with the groove with a second solution, the oxide layer being formed by oxidation of a substrate material of the substrate.

8. The method of claim 7, wherein, The corroding the protruding portion with a first solution to obtain a substrate with a flattened groove comprises: corroding the protruding portion with the first solution within a first time period after the removal of the oxide layer to obtain the substrate with the flattened groove, the first time period being less than or equal to 2 minutes.

9. The method according to any one of claims 1 to 8, characterized in that, The first component comprises a Josephson junction, and the conductor film layer comprises a first metal film layer and a second metal film layer. The evaporating a conductor film layer on the substrate with the flattened groove to obtain a substrate with a first component comprises: evaporating the first metal film layer on a second region of the surface of the substrate with the flattened groove; preparing an insulator on a third region of the first metal film layer; evaporating the second metal film layer on a fourth region of the surface of the substrate with the flattened groove to obtain the substrate with the Josephson junction, wherein the Josephson junction is formed by the first metal film layer, the insulator, and the second metal film layer, the third region is an overlapping region between the fourth region and the second region, and the third region is located in the flattened groove.

10. The method according to any one of claims 1 to 9, characterized in that, The etching a first region of a substrate surface to form a substrate with a groove comprises: etching the first region of the substrate surface to form the substrate with the groove by using a dry etching process; wherein a polymer formed by a reaction between an etching gas used in the dry etching process and a substrate material of the substrate is adsorbed on a substrate exposed on the surface of the substrate, and a region of the substrate covered by the polymer is not etched to form the protruding portion.

11. A component preparation system, characterized by comprising: The system comprises an etching machine, a corroding machine, and an evaporating machine. The etching machine is configured to etch a first region of a substrate surface to form a substrate with a groove, the bottom of the groove having a protruding portion. The etching machine is used for etching the protruding part by using a first solution to obtain a substrate with a flattened recess. The evaporation machine is used for evaporating a conductor film layer on the substrate with the flattened recess to obtain a substrate with a first component.

12. A chip product, characterized by The chip product comprises the first component obtained by using the method according to any one of claims 1 to 10.

13. The chip product according to claim 12, characterized by The chip product is used for manufacturing a superconducting quantum chip, or the chip product is the superconducting quantum chip.

14. An apparatus, comprising: The device comprises a chip product, and the chip product comprises the first component obtained by using the method according to any one of claims 1 to 10.

Images