Aging test system and method for high-speed dynamic random access memory

Abstract

The application discloses a kind of aging test system and method of high-speed dynamic random access memory, the system includes: test board, for carrying at least one memory chip to be tested;Controller, for generating and outputting test excitation signal in line with corresponding memory technology standard;Power management module, for providing adjustable power supply voltage for the memory chip to be tested according to control instruction;Communication interface, for realizing the data interaction of controller and host computer, and reading the configuration information of the memory chip to be tested;Wherein, test parameter template library associated with multiple memory technology standards and product specifications is pre-stored in controller, and according to the chip configuration information read by communication interface, corresponding test parameter template is automatically matched and loaded, to adapt to different standard memory chip.The application realizes the universalization, adaptive test of single hardware platform to multiple high-speed dynamic random access memory, significantly improves test efficiency and equipment utilization.

Description

Technical Field

[0001] This invention relates to the field of memory testing technology, and in particular to an aging test system and method for high-speed dynamic random access memory. Background Technology

[0002] In the semiconductor memory manufacturing industry, aging testing is a critical process to ensure the long-term reliability of chips. Its principle is to apply accelerated stress, such as high temperature and high voltage, to induce premature failure of chips with potential defects, thus achieving screening before shipment. As market demands for data bandwidth and energy efficiency continue to increase, the technical standards for dynamic random access memory (DRAM) are rapidly iterating. From fourth-generation Double Data Rate Synchronous DRAM (DDR4) and fourth-generation Low Power Double Data Rate Synchronous DRAM (LPDDR4), to fifth-generation Double Data Rate Synchronous DRAM (DDR5), fifth-generation Low Power Double Data Rate Synchronous DRAM (LPDDR5 / 5X), and sixth-generation Graphics Double Data Rate Synchronous DRAM (GDDR6), different standards exhibit significant differences in interface protocols, electrical characteristics, timing parameters, and packaging forms. The core challenge currently facing memory aging testing lies in the system's specialization and rigidity. Mainstream solutions typically involve customized development for a specific standard or model: the physical interfaces of the test board (such as sockets and traces) are designed for a specific package; the logic embedded in the test controller (usually an FPGA or dedicated ASIC) only supports specific communication protocols; and the test programs and parameters (such as voltage, timing, and training algorithms) are also hard-coded for specific chip models. This approach leads to serious technical problems:

[0003] 1. Low equipment utilization and high cost: The production line needs to be equipped with multiple dedicated aging test systems for memory chips of different standards or from different suppliers, resulting in huge equipment investment and low utilization.

[0004] 2. Long new product introduction cycle: The introduction and testing of each new chip requires a long process of hardware board modification, controller logic update, test parameter debugging and verification, which seriously slows down the product launch time and makes it unable to adapt to the rapidly changing market demand. Summary of the Invention

[0005] This invention provides an aging test system and method for high-speed dynamic random access memory to solve the problems of low equipment utilization, insufficient versatility, and long product cycle of existing memory testing solutions.

[0006] Firstly, an aging test system for high-speed dynamic random access memory is provided, comprising:

[0007] A test board is used to carry at least one memory chip under test;

[0008] The controller is used to generate and output test stimulus signals that conform to the corresponding memory technology standards.

[0009] The power management module is electrically connected to the test board and the controller, and is used to provide an adjustable power supply voltage to the memory chip under test according to the control command.

[0010] The communication interface is electrically connected to the test board and the controller respectively, and is used to realize data interaction between the controller and the host computer, as well as to read the configuration information of the memory chip under test;

[0011] The controller has a pre-built library of test parameter templates associated with various memory technology standards and product specifications. Based on the chip configuration information read from the communication interface, it automatically matches and loads the corresponding test parameter templates to adapt to memory chips of different standards.

[0012] As a further improvement to the present invention, it also includes:

[0013] The temperature sensing module is located on the test board near the memory chip under test and is electrically connected to the controller. It is used to monitor the temperature of the memory chip under test in real time and send the data to the controller.

[0014] The power consumption monitoring module is electrically connected to the controller and the test board, respectively, and is used to collect the operating current and voltage of the memory chip under test in real time and send them to the controller.

[0015] The controller also sends control commands to the power management module to adjust power supply parameters based on feedback data from the temperature sensing module and / or power consumption monitoring module.

[0016] As a further improvement to the present invention, the controller is specifically configured as follows:

[0017] During the steady-state aging test, a voltage fine-tuning command is generated to adjust the output voltage based on the deviation between the real-time temperature fed back by the temperature sensing module and the target temperature.

[0018] Meanwhile, based on the power consumption change trend fed back by the power consumption monitoring module, the activity parameters of the test stimulus signal are dynamically adjusted. The activity parameters include the instruction burst ratio or idle clock cycle ratio of the test mode.

[0019] Voltage fine-tuning and activity adjustment work together to control the temperature fluctuation of the memory chip under test within a preset threshold.

[0020] As a further improvement of the present invention, the controller generates voltage fine-tuning instructions specifically configured as follows:

[0021] Based on the deviation between the real-time temperature and the target temperature, the base voltage adjustment amount is output through the first control algorithm;

[0022] Based on the expected power consumption change corresponding to the current test mode, the expected voltage compensation amount is output through the second control algorithm;

[0023] The base voltage adjustment and the expected voltage compensation are combined, limited, and smoothed by filtering to generate a voltage fine-tuning command.

[0024] The first control algorithm is an adaptive proportional-integral algorithm with dead zone, and the second control algorithm is a feedforward compensation algorithm based on the test mode spectrum.

[0025] As a further improvement of the present invention, the controller is also configured to:

[0026] During the aging test, based on the feedback data from the temperature sensing module and the power consumption monitoring module, at least one dynamic parameter in the loaded test parameter template is optimized, and the optimization result is updated to the test parameter template library.

[0027] As a further improvement of the present invention, the templates in the test parameter template library consist of multiple independently configurable parameter modules;

[0028] During automatic matching, the controller selects and combines corresponding sub-modules from the timing parameter module, voltage parameter module, and initialization training algorithm module according to the chip configuration information to form a complete test parameter template.

[0029] Secondly, an aging test method for high-speed dynamic random access memory is provided, which is applied to an aging test system for one of the aforementioned high-speed dynamic random access memories; the method includes:

[0030] Parameter initialization: Install the memory chip under test on the test board. After the system is powered on, read the configuration information of the memory chip under test through the communication interface, and automatically match and load the corresponding test parameter template based on the configuration information by the controller.

[0031] Preheating phase: Based on the test parameter template, the controller controls the power management module to output the first voltage value and outputs a test signal with the first clock frequency, so that the chip temperature rises to the first target temperature range;

[0032] Aging stage: The controller controls the power management module to adjust the output voltage to the stress voltage value and increases the test clock frequency to the second frequency, entering the steady-state aging test stage;

[0033] Cooling phase: After the steady-state aging test is completed, the controller controls the power management module to reduce the voltage at a preset rate and simultaneously reduce the test frequency until the temperature of the memory chip under test drops below the second target temperature;

[0034] Data output: The system automatically generates a test report that includes temperature-time curves, power consumption-time curves, and signal integrity indicators.

[0035] As a further improvement of the present invention, the steady-state aging test stage further includes:

[0036] The controller generates a voltage fine-tuning command to adjust the output voltage based on the deviation between the real-time temperature fed back by the temperature sensing module and the target temperature.

[0037] Meanwhile, the controller dynamically adjusts the activity parameters of the test stimulus signal based on the power consumption change trend fed back by the power consumption monitoring module. The activity parameters include the instruction burst ratio or idle clock cycle ratio of the test mode.

[0038] By combining voltage fine-tuning and activity adjustment, the temperature fluctuation of the memory chip under test can be controlled within a preset threshold.

[0039] As a further improvement of the present invention, the controller generates voltage fine-tuning instructions specifically including:

[0040] Based on the deviation between the real-time temperature and the target temperature, the base voltage adjustment amount is output through the first control algorithm;

[0041] Based on the expected power consumption change corresponding to the current test mode, the expected voltage compensation amount is output through the second control algorithm;

[0042] The base voltage regulation and the expected voltage compensation are integrated, limited, and smoothed by filtering to generate a voltage fine-tuning command. The first control algorithm is an adaptive proportional-integral algorithm with dead zone, and the second control algorithm is a feedforward compensation algorithm based on the test mode spectrum.

[0043] As a further improvement of the present invention, the method also includes:

[0044] During the aging test, the controller optimizes at least one dynamic parameter in the loaded test parameter template based on feedback data from the temperature sensing module and the power consumption monitoring module.

[0045] If the controller reads the same configuration information in subsequent tests, it will prioritize calling the optimized parameters to update the test parameter template library.

[0046] The aforementioned high-speed dynamic random access memory (DRAM) aging test system and method integrates a programmable controller and a structured parameter template library, and establishes an automatic matching and loading mechanism. This allows a single hardware platform to adapt to memory chips of different technical standards and manufacturer specifications, such as DDR, LPDDR, and GDDR. This "one platform, multiple chips" approach significantly improves the equipment's versatility and utilization, and substantially reduces the repetitive equipment investment costs caused by standard iterations and product diversification. Secondly, the automated chip identification and parameter loading process shortens the traditional new product introduction and debugging process, which used to take days or even weeks, to minutes, greatly accelerating product launch and production line changeover response times. Finally, the digital parameter template library serves as a reliable carrier of standardized test knowledge, changing the fragmented management model that relied on individual engineer experience and laying a solid foundation for consistent, traceable, and continuously optimized test processes. This "configurable controller + structured parameter template library" architecture solves the problem of the fixed specialization of traditional memory aging test systems, achieving a leap in the versatility and intelligence of test capabilities. Attached Figure Description

[0047] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a schematic diagram of an aging test system for a high-speed dynamic random access memory according to an embodiment of the present invention.

[0049] Figure 2 This is a flowchart illustrating an aging test method for a high-speed dynamic random access memory according to an embodiment of the present invention. Detailed Implementation

[0050] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0051] Please see Figure 1 As shown, Figure 1This is a schematic diagram of the aging test system for a high-speed dynamic random access memory (DRAM) provided in an embodiment of the present invention. The aging test system for the DRAM includes: a test board 100, a controller 200, a power management module 300, and a communication interface 400.

[0052] Test board 100 is used to support at least one memory chip under test (DUT). As the physical carrier of the system, test board 100's main function is to provide mechanical support, electrical connection, and signal transmission channels for the DUT. To achieve versatility, test board 100 is designed following the principle of "basic platform + replaceable interface." The basic motherboard uses high-performance PCB materials (such as low-loss FR4 or Rogers materials) and completes the layout and routing of common circuits such as controller 200, power management, and communication interface 400. A standard, high-density connector array or pad area is designed in the area connecting the DUT. For different package types (such as BGA, FBGA, and LPDDR PoP packages), corresponding adapter boards are designed. One end of this adapter board matches the standard interface of the motherboard, while the other end is designed with sockets or pads corresponding one-to-one with the pins of the specific DUT package. By replacing different adapter boards, memory chips with different physical forms can be adapted without changing the motherboard design. Furthermore, the test board 100 uses a high-frequency board as the substrate, with a dielectric constant controlled within the range of 3.0 to 4.0 and a board thickness of 1.0 to 2.0 mm. The signal layer and reference layer use copper foil of different thicknesses, with the signal layer copper foil thickness ranging from 0.5 to 2.0 oz and the reference layer copper foil thickness from 0.2 to 1.0 oz. The length of high-speed signal traces is controlled within the range of 30 to 150 mm, and the radius of curvature of the traces is not less than three times the trace width to ensure signal integrity.

[0053] The controller 200 is used to generate and output test stimulus signals conforming to the corresponding memory technology standards. The controller 200 is the control core and "protocol adapter" of the entire system. In a preferred embodiment, the controller 200 consists of a high-performance field-programmable gate array (FPGA) and its peripheral circuitry, such as Xilinx's Kintex UltraScale series. The FPGA's programmable I / O units can support multiple voltage standards from 1.0V to 1.8V, allowing it to connect to memories with different supply voltages at physical levels. More importantly, the logic functions within the FPGA can be reconfigured by loading different hardware description languages ​​(HDLs). The system maintains a template library containing templates implementing the physical layer (PHY) and memory controller (MC) functions of different standards such as DDR4, LPDDR4 / 4X, LPDDR5, and GDDR6. Once the test target is determined, the corresponding template is loaded onto the FPGA, transforming it into a dedicated test engine for that standard.

[0054] The power management module 300 is electrically connected to both the test board 100 and the controller 200, and is used to provide an adjustable power supply voltage to the memory chip under test (MDT) according to control commands. The power management module 300 is responsible for providing a precise, stable, and programmable power supply to the MDT, and typically includes a multi-channel digital programmable DC power supply. Each channel should have a wide output voltage range (e.g., 0.5V to 2.0V), high precision (millivolt-level adjustment), fast transient response, and programmable slew rate control. The module receives commands from the controller 200 via a digital interface (e.g., PMBus, I2C) and adjusts the output of each voltage rail (e.g., VDD, VDDQ, VPP) in real time.

[0055] The communication interface 400 is electrically connected to the test board 100 and the controller 200, respectively, and is used to realize data interaction between the controller 200 and the host computer, as well as to read the configuration information of the memory chip under test. The communication interface 400 serves as a bridge for information interaction between the system and the external environment and the memory chip under test itself. It typically includes two types of channels: (1) System communication channel: such as Gigabit Ethernet, PCIe or USB interface, used to connect to the host computer (industrial control PC). The host computer is responsible for sending test tasks to the controller 200, transmitting or updating test parameter templates, and receiving test reports and process data; (2) Chip access channel: such as I2C, SPI or MDIO interface conforming to JEDEC standard. This channel is directly connected to the corresponding pin of the memory chip under test and is used to read the configuration information of the memory chip under test during the test initialization phase. For DRAM chips, this is usually done by accessing its mode register to obtain key identity identifiers such as Manufacturer ID, Device ID, density, and speed level. For memory modules (such as DIMM), it is done by reading the configuration data stored in the serial presence detection chip on it.

[0056] It should be noted that the controller 200 has a pre-built library of test parameter templates associated with various memory technology standards and product specifications, and automatically matches and loads the corresponding test parameter templates based on the chip configuration information read from the communication interface 400 to adapt to memory chips of different standards.

[0057] Specifically, the test parameter template library is a structured database stored in the controller 200's associated non-volatile memory (such as Flash), or it can be dynamically loaded by a host computer via a network. Each test parameter template in the library is a complete data structure that uniquely corresponds to a specific model or specification of memory chip and encapsulates all the knowledge required to perform aging tests on that chip. A complete template contains at least the following information groups:

[0058] (1) Identification and matching key: such as JEDEC vendor ID, equipment identifier, part number, density and speed class;

[0059] (2) Electrical parameter set: including standard operating voltage, recommended aging stress voltage, power-on and power-off sequence requirements, maximum allowable current, etc. for each voltage domain (VDD, VDDQ, VPP);

[0060] (3) Timing parameter set: Key timing parameters extracted from the JEDEC specification, such as tCK, tRCD, tRP, tRAS, tWR, etc., as well as parameters used for internal timing calculations of the controller 200;

[0061] (4) Initialization and Training Sequence: This section describes the detailed process and parameters from power-on reset to the completion of all necessary steps, including ZQ calibration, mode register configuration, write leveling, and read DQS gate training. This part is usually written in a script or state machine description language.

[0062] (5) Definition of basic test process: Basic settings for each stage of aging test (preheating, steady state, cooling), such as target temperature, duration, basic test clock frequency, etc.

[0063] The automatic matching and loading process is as follows: After the system is powered on and the memory chip under test is installed, the controller 200 automatically reads the configuration information (identity identifier) ​​of the memory chip under test through the chip access channel (such as I2C) of the communication interface 400. Subsequently, the matching engine running within the controller 200 (which can be a soft-core processor or fixed logic within the FPGA) compares this identifier with the "matching key" of all templates in the template library. When a matching template is found, the matching engine immediately triggers the loading process: sending the electrical parameters in the template to the power management module 300 for pre-configuration; loading the timing parameters and initialization sequence into the corresponding configuration registers and state machine of the controller 200; and loading the test process definition into the test scheduling unit. The entire process requires no manual intervention and can be completed within seconds, transforming a general-purpose hardware platform into a dedicated test system for the current memory chip under test.

[0064] This embodiment of the high-speed dynamic random access memory (DRAM) aging test system integrates a programmable controller 200 and a structured parameter template library, and establishes an automatic matching and loading mechanism. This allows a single hardware platform to adapt to memory chips of different technical standards and manufacturer specifications, such as DDR, LPDDR, and GDDR. This "one platform, multiple chips" approach significantly improves the equipment's versatility and utilization, and substantially reduces the repetitive equipment investment costs caused by standard iterations and product diversification. Secondly, the automated chip identification and parameter loading process shortens the traditional new product introduction and debugging process, which used to take days or even weeks, to minutes, greatly accelerating product launch and production line changeover response times. Finally, the digital parameter template library serves as a reliable carrier of standardized test knowledge, changing the fragmented management model that relied on individual engineer experience and laying a solid foundation for consistent, traceable, and continuously optimized test processes. This "configurable controller + structured parameter template library" architecture solves the problem of the fixed specialization of traditional memory aging test systems, achieving a leap in the versatility and intelligence of test capabilities.

[0065] Furthermore, the aging test system for the high-speed dynamic random access memory also includes a temperature sensing module 500 and a power consumption monitoring module 600. The temperature sensing module 500 is located on the test board 100 near the memory chip under test and is electrically connected to the controller 200. It is used to monitor the temperature of the memory chip under test in real time and send the data to the controller 200. The power consumption monitoring module 600 is electrically connected to both the controller 200 and the test board 100. It is used to collect the operating current and voltage of the memory chip under test in real time and send the data to the controller 200. The controller 200 also sends control commands to the power management module 300 to adjust the power supply parameters based on the feedback data from the temperature sensing module 500 and / or the power consumption monitoring module 600.

[0066] The core task of the temperature sensing module 500 is to sense the junction temperature of the memory chip under test (MDT) as accurately as possible. To this end, a high-precision, low-thermal-response-time digital temperature sensor (such as TI's TMP117) is used. The sensor is mounted close to the back of the test board 100, corresponding to the center of the MDT package, and is connected to the PCB pads or a dedicated thermal test point via high-performance thermal grease or phase-change material to minimize thermal resistance. The sensor transmits temperature data to the controller 200 in real time via a digital interface such as I2C at a frequency of at least 1Hz (preferably 10Hz). The power consumption monitoring module 600 is used to measure the dynamic power consumption of the MDT in real time, a key indicator reflecting the chip's operating status and thermal load. This module connects milliohm-level precision sampling resistors in series on each of the main power supply paths of the MDT (such as VDD input and VDDQ input). A high-side current-sensing amplifier (such as ADI's LTC2947 or INA230) is used to simultaneously measure the voltage drop across the sampling resistors (reflecting the current) and the voltage of the power supply rails. The integrated ADC converts these analog quantities into digital values ​​and sends them to the controller 200 via the I2C / SPI interface. This module not only provides average power consumption but also captures transient power consumption changes caused by test mode switching.

[0067] Specifically, the controller 200 internally operates a control loop: it uses data reported by the temperature sensing module 500 and / or the power consumption monitoring module 600 as a process variable (PV), compares it with the setpoint (SP) (such as target temperature, expected power consumption range) from the loaded template, and obtains the deviation. Then, the controller 200 calculates the adjustment amount that needs to be made to the manipulated variable (MV) (i.e., adjusting the output voltage of the power management module 300) according to the built-in control algorithm, and generates a corresponding digital instruction to send to the power management module 300. By cyclically executing this process, the system can automatically resist internal and external disturbances (such as changes in ambient temperature, chip process deviations), stabilizing the actual state of the memory chip under test near the setpoint.

[0068] Furthermore, the controller 200 is specifically configured to: during the steady-state aging test phase, generate a voltage fine-tuning command to adjust the output voltage based on the deviation between the real-time temperature fed back by the temperature sensing module 500 and the target temperature; simultaneously, dynamically adjust the activity parameter of the test excitation signal based on the power consumption change trend fed back by the power consumption monitoring module 600, the activity parameter including the command burst ratio or idle clock cycle ratio of the test mode; the voltage fine-tuning and activity adjustment work together to control the temperature fluctuation of the memory chip under test within a preset threshold.

[0069] Specifically, this embodiment proposes a dual-loop cooperative control strategy to solve the hysteresis and overshoot problems of traditional single temperature feedback control:

[0070] First loop: Voltage fine-tuning based on temperature deviation (main control loop). This is a typical negative feedback closed loop. Controller 200 continuously calculates the real-time temperature reported by the temperature sensor. The target temperature set by the template Deviation between This deviation is processed by a control algorithm (such as a proportional-integral algorithm) to generate a voltage adjustment command. The data is sent to the power management module 300, which directly affects the chip's static and dynamic power consumption by fine-tuning core voltages such as VDDQ, thereby regulating its heat generation and bringing the temperature back to the target value. This circuit is responsible for eliminating steady-state deviations and is the foundation of temperature control.

[0071] The second loop: Activity adjustment based on power consumption trends (feedforward and fast suppression loop). The controller 200 analyzes the data stream reported by the power consumption monitoring module 600 in real time, determining the chip's power consumption trend by calculating the moving average, slope, or deviation from the expected value of short-term (e.g., the past 100 milliseconds) power consumption. Once a rapid increase in power consumption is detected (possibly caused by switching to a high-activity test mode), indicating a risk of overheating, the controller 200 immediately and dynamically adjusts the activity parameters of the test stimulus signals it is generating. The specific implementation of the activity parameters: In the test mode sequence generated by the controller 200, not every clock cycle is filled with valid read / write commands. Through programming, the instruction burst ratio can be controlled (e.g., changing 8 consecutive write commands followed by 2 no-operations to 6 write commands followed by 4 no-operations), or a certain number of idle clock cycles can be directly inserted, increasing the proportion of idle cycles and thus reducing the activity. Reducing the activity can rapidly decrease the switching activity of the chip's internal logic units within a few clock cycles (microseconds), thereby instantly reducing dynamic power consumption and temperature rise rate. This adjustment is software-level, instantaneous, and does not change the applied voltage or the base clock frequency, meaning it does not reduce the intensity of electrical stress applied to the chip, but can quickly smooth out thermal fluctuations.

[0072] During the steady-state aging phase, the first loop handles the slow drift caused by environmental changes and chip aging, while the second loop, with its extremely fast response speed, is specifically designed to offset the rapid, periodic power consumption / temperature fluctuations caused by mode switching within the test program. Working in parallel and collaboratively, this coordinated strategy allows for strict control over the temperature fluctuation range of the memory chip under test during the aging process, significantly improving the consistency of test conditions.

[0073] Furthermore, the controller 200 generates voltage fine-tuning instructions specifically as follows: based on the deviation between the real-time temperature and the target temperature, it outputs a basic voltage adjustment amount through a first control algorithm; based on the expected power consumption change corresponding to the currently running test mode, it outputs an expected voltage compensation amount through a second control algorithm; and it performs comprehensive, amplitude-limiting, and smoothing filtering on the basic voltage adjustment amount and the expected voltage compensation amount to generate voltage fine-tuning instructions; wherein, the first control algorithm is an adaptive proportional-integral algorithm with dead zone, and the second control algorithm is a feedforward compensation algorithm based on the test mode spectrum.

[0074] Specifically, this embodiment discloses a composite control algorithm that integrates feedback, feedforward, and safety processing. The execution flow of this algorithm includes three core steps, ultimately generating precise and safe voltage fine-tuning commands:

[0075] 1. Base voltage regulation calculation (adaptive feedback control): An adaptive proportional-integral algorithm with dead zone is used as the first control algorithm. Dead zone: A small temperature deviation tolerance range is set, such as [-0.2℃, +0.2℃]. When When the temperature deviation is within this range, the algorithm output is zero, avoiding unnecessary frequent actions of the controller 200 caused by sensor noise or minor disturbances, thus enhancing system stability. Adaptive: The proportional gain Kp and integral gain Ki of the PI controller 200 are dynamically adjusted according to the magnitude of the deviation. When When the temperature is relatively high (>1℃), a larger Kp is used to obtain a strong corrective effect and quickly reduce the deviation; when When the voltage is low, switch to a smaller Kp and a moderate Ki for fine-tuning to eliminate steady-state error and prevent overshoot. This adaptive mechanism optimizes the dynamic response. The output of this step is the base voltage regulation. .

[0076] 2. Calculation of Expected Voltage Compensation (Model Feedforward Control): A feedforward compensation algorithm based on the test mode spectrum is used as the second control algorithm. The system establishes a simplified power consumption characteristic model for each available test mode (e.g., all 0s, all 1s, checkerboard, pseudo-random code PRBS31). This model includes the expected power consumption increment of executing this mode relative to the baseline mode. When the trial scheduling logic determines that a switch from mode A to mode B is imminent, the feedforward compensator is activated before the switch occurs, based on... Based on the system's equivalent thermal parameters, a desired voltage compensation amount is calculated. For example, if a switch to a high-power mode is imminent, a small negative voltage adjustment command is issued in advance to "pre-compensate" for the upcoming temperature rise. This greatly reduces the regulation burden on the feedback loop and decreases hysteresis and overshoot.

[0077] 3. Instruction synthesis and security limiting: Add the two quantities mentioned above: The initial instructions received must be processed securely:

[0078] Limit: Ensure The voltage adjustment should not exceed the maximum safe adjustment amount per step (e.g., ±5mV) to prevent excessive voltage jumps caused by algorithm calculation errors or interference.

[0079] Smoothing filter (ramp control): for A first-order low-pass filter is applied, or the voltage is directly converted into a ramp command executed at a specific slew rate (e.g., 0.1mV / ms). This ensures that the voltage fine-tuning command ultimately sent to the power management module 300 drives the output voltage to change smoothly and continuously, completely eliminating voltage steps and fundamentally preventing potential damage to the chip from electrical stress shocks. This is a crucial guarantee for the high safety of this solution.

[0080] Furthermore, the controller 200 is also configured to: during the aging test, optimize at least one dynamic parameter in the loaded test parameter template based on the feedback data from the temperature sensing module 500 and the power consumption monitoring module 600, and update the optimization result to the test parameter template library.

[0081] Specifically, during the aging test, the system not only controls the process but also acts as a comprehensive data logger. It continuously collects and correlates the following data: the template identifier used, the actual applied voltage / frequency curve, the high-resolution real-time temperature / power consumption curve, the bit error rate statistics under specific test modes, and the final pass / fail result.

[0082] After the test is completed or a certain number of cycles have been run, the optimization engine built into the controller 200 or the host computer is triggered. This engine analyzes massive amounts of data to optimize the "dynamic parameters" in the template. These parameters are usually not directly obtainable from the chip datasheet; their optimal values ​​depend on the specific usage environment, chip process batch, and test board 100 characteristics. For example:

[0083] Optimal aging stress voltage: Within the maximum voltage range allowed by JEDEC specifications, find the voltage point that can most effectively induce early failure without excessively damaging the chip.

[0084] Board-level timing margin calibration value: To compensate for the slight delay differences introduced by the 100 PCB traces of a specific test board, the standard timing parameters are fine-tuned.

[0085] Optimal preheating / cooling curve parameters: Find the voltage change rate that can reach the target temperature in the shortest time without overshoot, or the safest cooling rate.

[0086] The optimization engine can employ various strategies, ranging from simple heuristics (such as "if a batch of chips still experiences early returns after aging at voltage V1, then try V1+δV the next time similar chips are tested") to complex machine learning models (such as using Bayesian optimization to find the point in the parameter space that maximizes the defect detection rate or minimizes the test time). A key step is that once a new set of parameters is validated (e.g., proven to improve yield or shorten test time through comparative testing), the optimization engine generates a parameter optimization record. This record includes the chip identifier, the name of the optimized parameter, the optimized value, and the validation context. This record is saved and linked to the corresponding original template in the central test parameter template library. The next time the system detects a chip with the same identifier, the matching loading mechanism can prioritize loading or recommend using this locally optimized "enhanced" parameter. Thus, the system forms a positive cycle of "test-learn-optimize-apply," allowing the testing strategy to continuously improve itself with accumulated testing experience.

[0087] Furthermore, the templates in the test parameter template library consist of multiple independently configurable parameter modules; during automatic matching, the controller 200 selects corresponding sub-modules from the timing parameter module, voltage parameter module, and initialization training algorithm module according to the chip configuration information to form a complete test parameter template.

[0088] Specifically, this embodiment proposes a structural optimization scheme for the test parameter template library, namely modular design, to further improve the system's flexibility, coverage, and maintenance efficiency. Under this scheme, a complete test parameter template is no longer a single entity, but rather composed of multiple independently configurable and reusable parameter modules combined like building blocks. Typical module divisions include:

[0089] Timing Parameters Module: Contains all parameters related to clock cycle and delay.

[0090] Voltage parameter module: contains all supply voltages and power-on / off timing parameters.

[0091] Initialize training algorithm module: Contains initialization and training process code for specific standards (such as LPDDR5) or vendors.

[0092] Basic identity module: contains identification information such as manufacturer ID, density, and speed level.

[0093] Each module can be referenced by multiple different templates. This design brings two core advantages:

[0094] (1) Intelligent Combination Matching (for chips that are not fully matched): When the system reads the configuration information of a new chip and cannot find a completely identical template in the library, the matching engine can start the "fuzzy matching" or "combination matching" mode. For example, for a new model "LPDDR5 16Gb 5500Mbps chip from manufacturer C", there may not be a completely identical template in the library. However, the engine can find the following separately: "LPDDR5 general attribute module from manufacturer C" (containing manufacturer-specific training techniques), "16Gb LPDDR5 general timing module", "5500Mbps speed level voltage module", and "LPDDR5 standard initialization process module". The engine automatically and intelligently combines these modules to temporarily build a usable test template, thereby greatly expanding the system's testing capabilities for unknown or unpre-recorded chips and enhancing robustness.

[0095] (2) Efficient maintenance and knowledge reuse: When a certain type of knowledge needs to be updated (for example, JEDEC released an update patch for LPDDR5, which modified some training processes), only the corresponding sub-module in the initialization training algorithm module needs to be updated. All templates that reference this module will automatically take effect the next time they are loaded, greatly reducing the maintenance workload. At the same time, a fully verified and optimized voltage parameter module can be shared by all chip templates of different capacities using the same process node, realizing efficient reuse of test knowledge.

[0096] Please see Figure 2 As shown, Figure 2 This is a flowchart illustrating an aging test method for a high-speed dynamic random access memory (DRAM) provided in an embodiment of the present invention. This aging test method is applied to an aging test system for a DRAM according to one of the above embodiments. The aging test method includes:

[0097] Step S1: Parameter initialization: Install the memory chip under test on the test board. After the system is powered on, read the configuration information of the memory chip under test through the communication interface, and automatically match and load the corresponding test parameter template based on the configuration information.

[0098] Specifically, after the memory chip under test is installed and powered on, the controller actively reads the pre-programmed ID (such as the vendor code and device code in the mode register) inside the chip via protocols such as I2C / SPI. Then, the controller compares the read ID string with the index in the local test parameter template library. Upon successful matching, the controller performs a loading operation: sending the voltage parameters from the template to the power management module's register; loading the timing parameters and training algorithm code into its own configuration space; and setting the target parameters for each stage. The entire process is completed automatically without manual intervention, achieving seamless switching from general-purpose hardware to a dedicated testing environment.

[0099] Step S2: Preheating stage: Based on the test parameter template, the controller controls the power management module to output the first voltage value and outputs a test signal with the first clock frequency, so that the chip temperature rises to the first target temperature range.

[0100] Specifically, based on the parameters of the "preheating strategy" module in the loading template, the controller instructs the power management module to boost the voltage to the "first voltage value" (typically the chip's normal operating voltage) at a programmable slew rate (e.g., 0.05 V / s). Simultaneously, the controller begins outputting a low-frequency "first clock frequency" test signal (e.g., 1 / 4 of the core frequency) and runs a simple initialization test mode. The chip's own power consumption slowly heats it, causing its junction temperature to rise uniformly to the "first target temperature range" (e.g., 85℃ ± 5℃). The voltage ramp-up rate and starting frequency defined in the template are verified safe values.

[0101] Step S3: Aging stage: The controller controls the power management module to adjust the output voltage to the stress voltage value and increase the test clock frequency to the second frequency, entering the steady-state aging test stage.

[0102] Specifically, once the temperature reaches the preheating target and stabilizes, the controller instructs the power supply to increase the voltage to a higher "stress voltage value" (e.g., 1.1-1.2 times the normal operating voltage) and increase the test clock frequency to a "second frequency" (i.e., the nominal maximum or near the maximum frequency). Afterward, the system begins to run a high-intensity, complex test mode sequence for an extended period (e.g., 24-48 hours).

[0103] Step S4: Cooling stage: After the steady-state aging test is completed, the controller controls the power management module to reduce the voltage at a preset rate and simultaneously reduce the test frequency until the temperature of the memory chip under test drops below the second target temperature.

[0104] Specifically, after the aging time reaches the template set value, the controller instructs the power supply to slowly reduce the voltage at a preset safe rate (e.g., 0.1V / min), and simultaneously linearly reduce the test clock frequency. During this process, the chip gradually cools under low load until the temperature drops below the "second target temperature" (usually a safe temperature close to room temperature, such as 55°C). This "ramp-down" voltage / frequency reduction method is a key technical feature that ensures the safety of the chip and test board.

[0105] Step S5: Data Output: The system automatically generates a test report containing temperature-time curves, power consumption-time curves, and signal integrity indicators.

[0106] Specifically, throughout the testing process, the controller and host computer continuously collect and timestamp all sensor data, control command logs, and test response results. After the test, the software automatically integrates this data to generate a test report in a standard format (such as PDF or structured database entries). The report not only includes summary conclusions, but more importantly, it includes traceable temperature-time curves, power consumption-time curves, and signal integrity metrics (such as eye diagram width and bit error rate statistics) obtained through analysis of the read and write data.

[0107] The aging test method for high-speed dynamic random access memory in this embodiment achieves a fundamental transformation of aging testing from the traditional model of manual intervention and experience-driven approaches to a highly automated, process-oriented, and traceable modern testing model through a standardized and fully automated closed-loop process of "automatic parameter matching and initialization, multi-stage programmed stress application, and automatic data acquisition and report generation throughout the entire process." This method ensures a high degree of consistency and repeatability when different batches and different operators perform tests, significantly improving testing efficiency and result reliability, and laying a data foundation for the accumulation and intelligent analysis of test knowledge.

[0108] Furthermore, the steady-state aging test phase also includes:

[0109] 1. The controller generates a voltage fine-tuning command to adjust the output voltage based on the deviation between the real-time temperature fed back by the temperature sensing module and the target temperature.

[0110] 2. At the same time, the controller dynamically adjusts the activity parameters of the test excitation signal based on the power consumption change trend fed back by the power consumption monitoring module. The activity parameters include the instruction burst ratio or idle clock cycle ratio of the test mode.

[0111] 3. By combining voltage fine-tuning and activity adjustment, the temperature fluctuation of the memory chip under test can be controlled within a preset threshold.

[0112] For details on the above steps, please refer to the embodiment of the aging test system for high-speed dynamic random access memory described above, which will not be repeated here.

[0113] Furthermore, the controller generates voltage fine-tuning commands specifically including:

[0114] 1. Based on the deviation between the real-time temperature and the target temperature, the basic voltage adjustment amount is output through the first control algorithm.

[0115] 2. Based on the expected power consumption change corresponding to the current test mode, the expected voltage compensation amount is output through the second control algorithm.

[0116] 3. The base voltage regulation and expected voltage compensation are integrated, limited, and smoothed by filtering to generate voltage fine-tuning commands. The first control algorithm is an adaptive proportional-integral algorithm with dead zone, and the second control algorithm is a feedforward compensation algorithm based on the test mode spectrum.

[0117] For details on the above steps, please refer to the embodiment of the aging test system for high-speed dynamic random access memory described above, which will not be repeated here.

[0118] Furthermore, the aging test method for this high-speed dynamic random access memory also includes:

[0119] During the aging test, the controller optimizes at least one dynamic parameter in the loaded test parameter template based on feedback data from the temperature sensing module and the power consumption monitoring module.

[0120] If the controller reads the same configuration information in subsequent tests, it will prioritize calling the optimized parameters to update the test parameter template library.

[0121] For details on the above steps, please refer to the embodiment of the aging test system for high-speed dynamic random access memory described above, which will not be repeated here.

[0122] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. An aging test system for a high-speed dynamic random access memory, characterized in that, include: A test board is used to carry at least one memory chip under test; The controller is used to generate and output test stimulus signals that conform to the corresponding memory technology standards. The power management module is electrically connected to the test board and the controller, respectively, and is used to provide an adjustable power supply voltage to the memory chip under test according to the control command. The communication interface is electrically connected to the test board and the controller, respectively, and is used to realize data interaction between the controller and the host computer, and to read the configuration information of the memory chip under test; The controller has a pre-installed library of test parameter templates associated with various memory technology standards and product specifications. Based on the chip configuration information read from the communication interface, it automatically matches and loads the corresponding test parameter templates to adapt to memory chips of different standards. Also includes: A temperature sensing module is disposed on the test board near the memory chip under test and is electrically connected to the controller. It is used to monitor the temperature of the memory chip under test in real time and send the data to the controller. The power consumption monitoring module is electrically connected to the controller and the test board respectively, and is used to collect the operating current and voltage of the memory chip under test in real time and send them to the controller. The controller also sends the control command to the power management module to adjust the power supply parameters based on the feedback data from the temperature sensing module and / or the power consumption monitoring module. The controller is specifically configured to: during the steady-state aging test phase, generate a voltage fine-tuning command to adjust the output voltage based on the deviation between the real-time temperature fed back by the temperature sensing module and the target temperature; simultaneously, dynamically adjust the activity parameter of the test excitation signal based on the power consumption change trend fed back by the power consumption monitoring module, wherein the activity parameter includes the command burst ratio or idle clock cycle ratio of the test mode; the voltage fine-tuning and activity adjustment work together to control the temperature fluctuation of the memory chip under test within a preset threshold.

2. The aging test system for high-speed dynamic random access memory according to claim 1, characterized in that, The controller generates voltage fine-tuning commands specifically as follows: Based on the deviation between the real-time temperature and the target temperature, the base voltage adjustment amount is output through the first control algorithm; Based on the expected power consumption change corresponding to the current test mode, the expected voltage compensation amount is output through the second control algorithm; The base voltage adjustment amount and the expected voltage compensation amount are combined, limited, and smoothed by filtering to generate the voltage fine-tuning command. The first control algorithm is an adaptive proportional-integral algorithm with dead zone, and the second control algorithm is a feedforward compensation algorithm based on the test mode map.

3. The aging test system for high-speed dynamic random access memory according to claim 1, characterized in that, The controller is also configured to: During the aging test, based on the feedback data from the temperature sensing module and the power consumption monitoring module, at least one dynamic parameter in the loaded test parameter template is optimized, and the optimization result is updated to the test parameter template library.

4. The aging test system for high-speed dynamic random access memory according to claim 1, characterized in that, The templates in the test parameter template library consist of multiple independently configurable parameter modules; During automatic matching, the controller selects corresponding sub-modules from the timing parameter module, voltage parameter module, and initialization training algorithm module according to the chip configuration information and combines them to form a complete test parameter template.

5. An aging test method for a high-speed dynamic random access memory, characterized in that, It is applied to the aging test system of the high-speed dynamic random access memory as described in any one of claims 1-4; the method includes: Parameter initialization: The memory chip under test is installed on the test board. After the system is powered on, the configuration information of the memory chip under test is read through the communication interface, and the controller automatically matches and loads the corresponding test parameter template based on the configuration information. Preheating phase: The controller, based on the test parameter template, controls the power management module to output a first voltage value and a test signal with a first clock frequency, so that the chip temperature rises to the first target temperature range; Aging stage: The controller controls the power management module to adjust the output voltage to the stress voltage value and increase the test clock frequency to the second frequency, entering the steady-state aging test stage; Cooling phase: After the steady-state aging test is completed, the controller controls the power management module to reduce the voltage at a preset rate and simultaneously reduce the test frequency until the temperature of the memory chip under test drops below the second target temperature; Data output: The system automatically generates a test report that includes temperature-time curves, power consumption-time curves, and signal integrity indicators.

6. The aging test method for high-speed dynamic random access memory according to claim 5, characterized in that, The steady-state aging test phase also includes: The controller generates a voltage fine-tuning command to adjust the output voltage based on the deviation between the real-time temperature fed back by the temperature sensing module and the target temperature. Meanwhile, the controller dynamically adjusts the activity parameter of the test stimulus signal based on the power consumption change trend fed back by the power consumption monitoring module. The activity parameter includes the instruction burst ratio or idle clock cycle ratio of the test mode. By combining voltage fine-tuning and activity adjustment, the temperature fluctuation of the memory chip under test can be controlled within a preset threshold.

7. The aging test method for high-speed dynamic random access memory according to claim 6, characterized in that, The controller generates voltage fine-tuning commands specifically including: Based on the deviation between the real-time temperature and the target temperature, the base voltage adjustment amount is output through the first control algorithm; Based on the expected power consumption change corresponding to the current test mode, the expected voltage compensation amount is output through the second control algorithm; The base voltage adjustment amount and the expected voltage compensation amount are combined, limited, and smoothed by filtering to generate the voltage fine-tuning command. The first control algorithm is an adaptive proportional-integral algorithm with dead zone, and the second control algorithm is a feedforward compensation algorithm based on the test mode spectrum.

8. The aging test method for high-speed dynamic random access memory according to claim 5, characterized in that, The method further includes: During the aging test, the controller optimizes at least one dynamic parameter in the loaded test parameter template based on feedback data from the temperature sensing module and the power consumption monitoring module. If the controller reads the same configuration information in subsequent tests, it will prioritize calling the optimized parameters to update the test parameter template library.

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