Solar cell IV test calibration method and device, terminal and medium

Abstract

The invention discloses a solar cell IV test calibration method and device, a terminal and a medium, and aims at a solar cell sample with known determined size and main grid number, the number of fine grids or line resistance of the sample is changed, a plurality of variants of the sample are obtained, and the lumped resistance of different variants is calculated. Testing corresponding resistance values of different variants under specific few-probe-row configuration and full-probe-row configuration, and calculating a resistance difference value; performing linear fitting on the resistance difference value and the lumped resistance to obtain a linear calibration factor value of the corresponding sample under the corresponding few-probe-row configuration; on the basis of the specific few-probe-row configuration, for a variant sample to be tested of the sample, IV data after calibration can be obtained by substituting the lumped resistance of the sample to be tested and the calibration factor array into the calibration relational expression for calculation, and the method improves the accuracy of solar cell IV test calibration under the condition of solar cell metallization change.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to a solar cell IV test calibration method, apparatus, terminal and medium. Background Technology

[0002] TOPCon solar cells have demonstrated an average efficiency of over 25% in industrial applications. The main factor affecting the complete replacement of PERC by TOPCon solar cells is cost, with silver consumption being a key component. This is primarily because TOPCon solar cells use silver electrodes on both sides, while PERC cells only use silver electrodes on the front. To ensure a smooth transition from PERC cells to TOPCon, it is necessary to continuously reduce silver consumption without significantly impacting the efficiency of TOPCon cells.

[0003] Traditional solar cell efficiency testing requires the number of probe arrays to match the number of main grids in the cell. This method offers high reliability but consumes a significant amount of silver. To reduce production costs, current solar cell efficiency testing is gradually shifting towards using probe arrays with fewer probe arrays than the number of main grids. The current approach involves comparing test data from a standard cell using a probe array with the same number of main grids as the cell's main grids with data from a probe array using half the number of main grids. A calibration factor is then obtained and applied to the sample under test. However, in practical applications, this method remains prone to inaccurate efficiency results and suffers from low reliability. Summary of the Invention

[0004] This application provides a solar cell IV test calibration method, apparatus, terminal, and medium to solve the technical problem of low reliability in existing solar cell efficiency tests.

[0005] To address the aforementioned technical problems, the first aspect of this application provides a solar cell IV test calibration method, comprising:

[0006] Obtain solar cell samples with known structural parameters:

[0007] Based on the solar cell sample, multiple variants of the solar cell sample are obtained by changing the number of fine grids or the line resistance of the fine grids. The lumped resistance of the fine grids in each variant is calculated, and the lumped resistance is the ratio of the line resistance of the fine grids to the number of fine grids.

[0008] The first resistance of each variant in a specific few-probe-pile configuration and the second resistance in a full-probe-pile configuration are tested respectively, and the resistance difference between the first resistance and the second resistance is calculated.

[0009] Based on the lumped resistance of each variant's fine grid, combined with the resistance difference of multiple variants, with the resistance difference as the dependent variable and the lumped resistance as the independent variable, the lumped resistance and the resistance difference are linearly fitted to obtain the slope and intercept. The slope and the intercept are used as the calibration factor value of the solar cell sample under the specific few probe array configuration.

[0010] The solar cell under test is obtained. Based on the structural parameters of the solar cell under test and the lumped resistance of the fine grid, the target calibration factor value corresponding to the solar cell sample under test is determined. Then, according to the calibration formula and the target calibration factor value, the measured IV data obtained by the solar cell under test under a specific few probe array configuration is corrected.

[0011] Preferably, the structural parameters include: the size of the solar cell and the number of main grids.

[0012] Preferably, the line resistance of the fine grid is specifically: the average resistance of a single fine grid per unit centimeter length.

[0013] Preferably, the lumped resistance specifically includes: front surface lumped resistance and back surface lumped resistance, wherein the front surface lumped resistance is specifically the ratio of the line resistance of the fine gates on the front surface of the variant to the number of fine gates, and the back surface lumped resistance is specifically the ratio of the line resistance of the fine gates on the back surface of the variant to the number of fine gates.

[0014] Preferably, the linear fitting relationship between the lumped resistance and the resistance difference is specifically as follows:

[0015]

[0016] In the formula, The resistance difference of the variant of the solar cell sample under a specific few-probe-row configuration and a full-probe-row configuration. For the specific few probe array configuration, the accurate test resistance. For the accurate test resistance under the aforementioned full probe array configuration. The average value of the unit gate line resistance of the sample variant, obtained by testing and calculation. The number of fine grids for the sample variant. The lumped resistance of the front surface. The lumped resistance of the back surface.

[0017] Preferably, the calibration formula is:

[0018]

[0019] in, These are the actual IV test data for the battery under test. The IV data is calibrated, and k0 and c0 are the values ​​of the target calibration factor.

[0020] Meanwhile, a second aspect of this application provides a solar cell IV test calibration apparatus, comprising:

[0021] The battery sample acquisition unit is used to acquire solar cell samples with known structural parameters.

[0022] The lumped resistance calculation unit is used to obtain multiple variants of the solar cell sample by changing the number of fine grids or the line resistance of the fine grids based on the solar cell sample, and to calculate the lumped resistance of the fine grids of each variant. The lumped resistance is the ratio of the line resistance of the fine grids to the number of fine grids.

[0023] The resistance difference calculation unit is used to test the first resistance of each variant in a specific few probe array configuration and the second resistance in a full probe array configuration, and to calculate the resistance difference between the first resistance and the second resistance.

[0024] The calibration factor calculation unit is used to perform linear fitting on the lumped resistance of each variant fine grid, combined with the resistance difference of multiple variants, with the resistance difference as the dependent variable and the lumped resistance as the independent variable, to obtain the slope and intercept, and to use the slope and intercept as the calibration factor value of the solar cell sample under the specific few probe array configuration.

[0025] The measured data calibration unit is used to acquire the solar cell under test, determine the target calibration factor value corresponding to the solar cell sample under test by combining the structural parameters of the solar cell under test and the lumped resistance of the fine grid, and then correct the measured IV data of the solar cell under test obtained under a specific few probe array configuration according to the calibration formula and the target calibration factor value.

[0026] A third aspect of this application provides a solar cell IV test and calibration terminal, including: a memory and a processor;

[0027] The memory is used to store program code corresponding to a solar cell IV test calibration as provided in the first aspect of this application;

[0028] The processor is used to read and execute the program code.

[0029] The fourth aspect of this application provides a computer-readable storage medium storing program code corresponding to a solar cell IV test calibration as provided in the first aspect of this application.

[0030] As can be seen from the above technical solutions, this application has the following advantages:

[0031] The technical solution provided in this application targets solar cell samples with known and fixed dimensions and the number of main grids. By changing the number of fine grids or the line resistance of the samples, multiple variants of the samples are obtained. The lumped resistance of different variants is calculated, and the resistance values ​​of different variants under specific few-probe array configurations and full-probe array configurations are tested and the resistance difference is calculated. The resistance difference and the lumped resistance are linearly fitted to obtain the linear calibration factor value of the corresponding sample under the corresponding few-probe array configuration. Based on the specific few-probe array configuration, for the test variant sample of the sample, the calibrated IV data can be obtained by substituting the lumped resistance of the test sample and the calibration factor array into the calibration relationship formula. This method improves the accuracy of solar cell IV test calibration under the condition of changes in solar cell metallization. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 A comparison diagram of the structure and equivalent circuit of a solar cell under full probe array testing and few probe array testing conditions;

[0034] Figure 2 This is a comparison chart of IV curves measured using a 6-probe array and a 12-probe array based on existing calibration methods.

[0035] Figure 3 A comparison chart showing the CF values ​​for different groups, as well as the differences between total resistance and finger resistance;

[0036] Figure 4 This is a flowchart illustrating an embodiment of a solar cell IV test calibration method provided in this application;

[0037] Figure 5 The graph shows the change in resistance difference when the number of fine grids on the front surface is changed under the condition of testing 12 main grid cells with a 6-probe array.

[0038] Figure 6 This is a graph showing the change in resistance difference when the fine grid resistance on the front surface is changed, under the condition of testing 12 main grid cells with a 6-probe array.

[0039] Figure 7 The graph shows the change in resistance difference when the number of fine grids on the back surface is changed under the condition of testing 12 main grid cells with a 6-probe array.

[0040] Figure 8 The graph shows the change in resistance difference when the back surface fine grid resistance is changed under the condition of testing 12 main grid cells with a 6-probe array.

[0041] Figure 9 A comparison of IV curves measured using a 6-probe array and a 12-probe array based on the calibration method of this application;

[0042] Figure 10 This is a schematic diagram of an embodiment of a solar cell IV test and calibration device provided in this application;

[0043] Figure 11 This is a schematic diagram of an embodiment of a solar cell IV test and calibration terminal provided in this application. Detailed Implementation

[0044] To ensure accurate efficiency testing, the number of probe arrays (PAs) in a solar cell must match the number of busbars (BBs). To overcome this error, current methods involve comparing test data from a standard cell using a probe array with the same number of busbars as the standard cell with data from a probe array using half the number of busbars. A calibration factor is then applied to the sample under test. For example, using a 210-size TOPCon solar cell, which typically employs 12 busbars, the side view of the probe-busbar positional relationship during testing with 12 PAs is shown below. Figure 1 As shown in (a), the top view of the structure is as follows: Figure 1 As shown in (b), the equivalent circuit is as follows: Figure 1 As shown in (c); and when using 6 PA tests, the side view structure of the positional relationship between the probe and the main gate is as follows. Figure 1 As shown in (d), the top view of the structure is as follows: Figure 1 As shown in (e), the equivalent circuit is as follows: Figure 1 As shown in (f). The IV curve of the test is as follows. Figure 3 As shown, the open-circuit voltage and short-current density are consistent, with the deviation located near the maximum power point. The IV curve obtained using six PAs needs to be corrected using a calibration factor (CF). Figure 1 (c) and Figure 1 In (d), V 12 I 12 and R 12 The voltage, current, and series resistance are measured using 12 PAs, while V6, I6, and R6 are measured using 6 PAs. An additional series resistance ΔR is introduced. s As a result, an additional series resistance ΔR is introduced. s As R12 The difference between R6 and R6 is represented by dividing R6 into R... 12 and △R s The two parts, then, in R 12 Afterwards, the voltmeter was imaged, see... Figure 1 (f), labeled V '12 Then when I6 = I 12 At that time, V' 12 The value is represented by V. 12 The identifier is represented as:

[0045]

[0046] like Figure 2 As shown, the purpose of introducing CF for correction is to modify the data measured using 6 PAs to the data measured using 12 PAs. Therefore, R12 can be removed here by adding f as the value of CF, and then:

[0047]

[0048] Where f is the CF value related to the series resistance. Typically, the parameters of a standard cell are known. When the series resistance of a reference solar cell obtained using 12 PAs is known, f can be calculated using the R6 value measured by 6 PAs. Then, f is applied to the testing of other cells. That is, the IV data obtained from other cells using 6 PAs, after being corrected by f, yields the IV data tested under 12 PAs, thus achieving the calibration effect.

[0049] However, in practical applications, the aforementioned existing calibration methods are only feasible and reliable if the structure of the battery under test is identical to that of the standard battery. This means that the number, height, and width of the grid lines must be exactly the same. In this case, the battery under test and the standard battery are in mass production. However, for R&D technology improvements and cost reduction processes, there is a high probability that the grid line structure needs to be changed. In this case, the standard battery remains unchanged. If the calibration factor obtained based on the standard battery is still used, errors will occur, resulting in the measured battery efficiency being underestimated or overestimated. This leads to the technical problem of low reliability of calibration results when the grid line structure is changed.

[0050] This application provides a solar cell IV test calibration method, apparatus, terminal, and medium to solve the technical problem of low reliability in existing solar cell efficiency tests.

[0051] To make the invention objectives, features, and advantages of this application more obvious and understandable, the following will combine the accompanying drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described below are only a part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of this application.

[0052] First, a detailed description of an embodiment of a solar cell IV test calibration method provided by this application is as follows:

[0053] Please refer to Figure 4 , a solar cell IV test calibration method provided by this embodiment includes:

[0054] Step 101: Obtain a solar cell sample with known structural parameters;

[0055] Step 102: Based on the solar cell sample, by changing the number of fine grids or the sheet resistance of the fine grids of the solar cell sample, obtain multiple variants of the solar cell sample, and calculate the lumped resistance of the fine grids of each variant;

[0056] Among them, the lumped resistance is the ratio of the sheet resistance of the fine grid to the number of fine grids;

[0057] Step 103: Test the first resistance of each variant under a specific few-probe row configuration and the second resistance under a full-probe row configuration respectively, and calculate the resistance difference between the first resistance and the second resistance;

[0058] Among them, the test conditions of this embodiment are preferably: under the standard test conditions of a temperature of 25°C, a power of 0.1 W / cm2, and a spectrum of AM1.5. It should be noted that first, based on a sufficient number of various solar cell samples, different types of solar cell samples mean that at least one of the size, number of main grids, and fine grid line structure of two battery samples is different. By testing these solar cell samples under different probe row configurations, resistance test data, so as to obtain the first resistance test data measured by these solar cell samples under the few-probe row configuration and the second resistance test data of the solar cell samples under the full-probe row configuration. It can be understood that assuming the number of main grids of the solar cell is m and the number of test probe arrays is n, the few-probe row configuration mentioned in this embodiment refers to the test condition where n < m, and the first resistance test data obtained under this test condition is denoted as R n , the full-probe row configuration refers to the test condition where n = m, and the second resistance test data obtained under this test condition is denoted as R m .

[0059] The configuration of the few probe arrays determines the value of the lumped resistance. Specifically, if the few probe arrays are only used on the front surface of the solar cell, and the back surface is configured with all probe arrays or directly uses a conductive metal platform, then... That is, the lumped resistance only includes the lumped resistance of the front surface; if the probe array is only used on the back of the solar cell and the front surface is configured with a full probe array, then That is, the lumped resistance only includes the lumped resistance of the back surface; if the probe array is configured on both the front and back surfaces, the lumped resistance is the sum of the lumped resistances of the front and back surfaces, i.e. .

[0060] Based on the obtained resistance test data R m and R n Calculate the first resistance test data R respectively. n With the second resistance test data R m resistance difference .

[0061] Step 104: Based on the lumped resistance of each variant's fine grid, combined with the resistance difference of multiple variants, with the resistance difference as the dependent variable and the lumped resistance as the independent variable, linearly fit the lumped resistance and the resistance difference to obtain the slope and intercept. Use the slope and intercept as the calibration factor value of the solar cell sample under a specific few probe array configuration.

[0062] It should be noted that the lumped parameter of the fine gate line mentioned in this embodiment can be the ratio of the line resistance of the fine gate line to the number of fine gates. Since the resistance of the metal gate line (finger) is very small relative to the emitter (emitter), the current transmission at the emitter always flows directly to the metal, that is, the resistance generated by the emitter remains unchanged at 12PA and 6PA. As for the main gate, due to the use of a large number of probes and the small spacing between each probe, the resistance it experiences is very small and can be ignored. Finally, it can be seen that the resistance difference at 6PA and 12PA mainly comes from the resistance difference on the fine gate, that is, the resistance difference under n=m probe array and n<m probe array tests is mainly determined by the lumped resistance of the fine gate. The lumped resistance of the fine gate is closely related to the number of fine gates and the line resistance of a single fine gate, that is, the following relationship can be obtained:

[0063]

[0064] in, The line resistance of a single fine gate line. This represents the number of fine grid lines.

[0065] set up / = With △R as the ordinate, and Using the x-axis as the horizontal axis, a scatter plot is drawn. Based on the distribution of the scatter points, it can be determined that the relationship between the lumped parameters of the fine grid lines and the resistance difference is a linear correlation in one variable, which can be further expressed as follows:

[0066]

[0067] More specifically, the lumped resistance includes: front surface lumped resistance and back surface lumped resistance, wherein the front surface lumped resistance is specifically the ratio of the line resistance of the fine gates on the front surface of the variant to the number of fine gates, and the back surface lumped resistance is specifically the ratio of the line resistance of the fine gates on the back surface of the variant to the number of fine gates.

[0068] The linear fitting relationship between the lumped resistance and the resistance difference is as follows:

[0069]

[0070] In the formula, The resistance difference for a variant of a solar cell sample under a specific few-probe array configuration versus a full-probe array configuration. For accurate testing of resistors in specific few-probe-pair configurations. For accurate testing of resistance under full probe array configuration. The average value of the unit gate line resistance for the sample variant is obtained from testing and calculation. The number of fine grids for the sample variant. The lumped resistance of the front surface. The lumped resistance of the back surface.

[0071] Then, based on the fitted curve, the values ​​of the calibration factors—slope k and intercept c—are determined for n probe arrays and m main grids. Following the same process, linear fitting is performed on the lumped parameters of the fine grid lines and the resistance difference for different solar cell sample structures and probe array configurations, i.e., different (m, n) combinations. This yields the k and c values ​​for different variants of the solar cell structure in specific (m, n) solar cell test configuration combinations, which serve as calibration factor values ​​for relevant technicians. These values, combined with the constructed calibration formula, are used for calibrating solar cell IV data.

[0072] It is understandable that if the solar cell samples obtained in step 101 have multiple different structural parameters, the k and c values ​​corresponding to each type of structural parameter solar cell sample can be calculated sequentially according to the above processing procedure.

[0073] Step 105: Obtain the solar cell under test. Combine the structural parameters of the solar cell under test and the lumped resistance of the fine grid to determine the target calibration factor value corresponding to the solar cell sample under test. Then, according to the calibration formula and the target calibration factor value, correct the measured IV data of the solar cell under test obtained under a specific few probe array configuration.

[0074] It should be noted that, based on the calibration relationship established in the preceding steps, during the actual solar cell IV test calibration phase, the solar cell under test is acquired. Then, according to the cell structure of the solar cell under test and the probe array data configured for the actual test, i.e., the m and n values, the target calibration factor corresponding to the solar cell under test is determined, that is, the calibration factor corresponding to the solar cell under test in this test is determined, and the line resistance of the fine grid lines of the solar cell under test is obtained. and the number of fine grid lines Line resistance Substituting the number of fine grid lines and the target calibration factor into the calibration formula, the resistance difference ΔR is obtained by solving the calibration formula. Then, based on the measured IV data V... n and I n ,according to The relationship can be used to obtain IV data under m probe arrays, which means that IV data under n=m probe arrays can be obtained, thus completing the correction of efficiency test when the number of probe arrays is less than the number of gates.

[0075] The above is a detailed description of a basic embodiment of a solar cell IV test calibration method provided in this application. Based on the above basic embodiment, the following further technical contents may also be included:

[0076] It should be noted that solar cells come in various sizes, such as 182, 210, and others, and different sizes correspond to different k values. Furthermore, the k value is closely related to the number of probes (n). Once the cell size and the number of probes (n) are determined, k is fixed. Since the calibration formula is obtained under ideal assumptions, the parameter c represents the error compared to real-world conditions. Figure 3 As shown, the error represented by parameter c is around 5%, which is negligible. Regarding how to determine the calibration factors k and c for testing with an n-probe array under different battery sizes and different numbers of main grids m, the reference examples provided in this embodiment include:

[0077] Based on the different numbers of grid lines printed on the front surface, there are a groups of different numbers, where a ≥ 3. Calculate R for each group. l,lump , to obtain R l,lump1 R l,lump2 ... R l,lumpa .

[0078] The resistance R corresponding to different numbers of gate lines was tested using n probe arrays and m probe arrays, respectively. n and R m Thus, their difference ΔR = R n -R m There are a groups in total, therefore we get a triangles R, namely triangles R1, R2, ..., R1. a ;

[0079] Then, using △R as the ordinate and R as the coordinate... l,lump Use the x-axis to plot a scatter plot;

[0080] A linear fit is performed on it to obtain the slope k and intercept c, thus obtaining the first set of fitting parameters;

[0081] Then, continue changing the front surface fine grid line resistance, the number of back surface fine grids, and the back surface fine grid resistance, repeating the previous steps to obtain a series of k and c values. Assuming a 6-probe array is used to test 12 main grid cells, the change in resistance difference when the number of front surface fine grids is changed is as follows: Figure 5 As shown, the change in resistance difference when the fine grid resistance on the front surface is changed is as follows: Figure 6 As shown, the change in resistance difference when the number of fine grids on the back surface is changed is as follows: Figure 7 As shown, the change in resistance difference when the fine grid resistance on the back surface is changed is as follows: Figure 8 As shown.

[0082] Then, the obtained k and c values ​​are summarized and the average value k is calculated. ave and c ave The details are shown in Table 1 below:

[0083] Table 1 Summary of k and c values

[0084]

[0085] The average value k obtained ave and c ave It can be used as the final calibration factor value for the current (m, n) combination.

[0086] Obtain the line resistance of the battery under test and N f , using k ave and c ave Substitute Calculate the resistance difference of the battery under test.

[0087] according to IV data from m probe arrays are obtained to complete the calibration. The comparison results of calibration according to the technical solution of this application are as follows: Figure 9 As shown.

[0088] The above is a detailed description of a further embodiment of a solar cell IV test calibration method provided in this application. The following is a detailed description of an embodiment of a solar cell IV test calibration device provided in this application.

[0089] Please see Figure 10 This embodiment provides a solar cell IV test calibration device, comprising:

[0090] Battery sample acquisition unit 201 is used to acquire solar cell samples with known structural parameters.

[0091] The lumped resistance calculation unit 202 is used to calculate the lumped resistance of the fine grids of each solar cell sample by changing the number of fine grids or the line resistance of the fine grids based on the solar cell sample. The lumped resistance is the ratio of the line resistance of the fine grids to the number of fine grids.

[0092] The resistance difference calculation unit 203 is used to test the first resistance of each variant in a specific few probe array configuration and the second resistance in a full probe array configuration, and to calculate the resistance difference between the first resistance and the second resistance.

[0093] The calibration factor calculation unit 204 is used to perform linear fitting of the lumped resistance of each variant fine grid, combined with the resistance difference of multiple variants, with the resistance difference as the dependent variable and the lumped resistance as the independent variable, to obtain the slope and intercept, and use the slope and intercept as the calibration factor value of the solar cell sample under a specific few probe array configuration.

[0094] The measured data calibration unit 205 is used to acquire the solar cell under test, determine the target calibration factor value corresponding to the solar cell sample under test by combining the structural parameters of the solar cell under test and the lumped resistance of the fine grid, and then correct the measured IV data of the solar cell under test obtained under a specific few probe array configuration according to the calibration formula and the target calibration factor value.

[0095] In addition to the above-described embodiments of the solar cell IV test and calibration device, this application also provides a detailed description of an embodiment of a solar cell IV test and calibration terminal and a computer-readable storage medium, as follows:

[0096] like Figure 11 As shown, this application provides an embodiment of a solar cell IV test and calibration terminal. The type of terminal includes, but is not limited to, personal computers, industrial computers, servers, and embedded intelligent devices. The main components of the terminal include: a memory 33 and a processor 31. The memory 33 and the processor 31 can be connected via a communication bus 34.

[0097] Memory 33 is used to store program code corresponding to a solar cell IV test calibration as provided in the foregoing embodiments;

[0098] Processor 31 is used to read and execute program code.

[0099] This application provides an embodiment of a computer-readable storage medium, which stores program code corresponding to a solar cell IV test calibration as provided in the foregoing embodiments.

[0100] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the terminals, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0101] In the several embodiments provided in this application, it should be understood that the disclosed terminals, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between devices or units through some interfaces, and may be electrical, mechanical, or other forms.

[0102] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0103] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0104] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0105] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0106] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0107] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A solar cell IV test calibration method, characterized in that, include: Obtain solar cell samples with known structural parameters: Based on the solar cell sample, multiple variants of the solar cell sample are obtained by changing the number of fine grids or the line resistance of the fine grids. The lumped resistance of the fine grids in each variant is calculated, and the lumped resistance is the ratio of the line resistance of the fine grids to the number of fine grids. The first resistance of each variant in a specific few-probe-pile configuration and the second resistance in a full-probe-pile configuration are tested respectively, and the resistance difference between the first resistance and the second resistance is calculated. Based on the lumped resistance of each variant's fine grid, combined with the resistance difference of multiple variants, with the resistance difference as the dependent variable and the lumped resistance as the independent variable, the lumped resistance and the resistance difference are linearly fitted to obtain the slope and intercept. The slope and the intercept are used as the calibration factor value of the solar cell sample under the specific few probe array configuration. The solar cell under test is obtained. Based on the structural parameters of the solar cell under test and the lumped resistance of the fine grid, the target calibration factor value corresponding to the solar cell sample under test is determined. Then, according to the calibration formula and the target calibration factor value, the measured IV data obtained by the solar cell under test under a specific few probe array configuration is corrected.

2. The solar cell IV test calibration method according to claim 1, characterized in that, The structural parameters include the size of the solar cell and the number of main grids.

3. The solar cell IV test calibration method according to claim 1, characterized in that, The line resistance of the fine grid is specifically defined as the average resistance of a single fine grid per unit length.

4. The solar cell IV test calibration method according to claim 1, characterized in that, The lumped resistance specifically includes: front surface lumped resistance and back surface lumped resistance, wherein the front surface lumped resistance is specifically the ratio of the line resistance of the fine gates on the front surface of the variant to the number of fine gates, and the back surface lumped resistance is specifically the ratio of the line resistance of the fine gates on the back surface of the variant to the number of fine gates.

5. The solar cell IV test calibration method according to claim 4, characterized in that, The linear fitting relationship between the lumped resistance and the resistance difference is specifically as follows: In the formula, The resistance difference of the variant of the solar cell sample under a specific few-probe-row configuration and a full-probe-row configuration. For the specific few probe array configuration, the accurate test resistance. For the accurate test resistance under the aforementioned full probe array configuration. The average value of the unit gate line resistance of the sample variant, obtained by testing and calculation. The number of fine grids for the sample variant. The lumped resistance of the front surface. The lumped resistance of the back surface.

6. The solar cell IV test calibration method according to claim 5, characterized in that, The calibration relationship is as follows: in, These are the actual IV test data for the battery under test. The IV data is calibrated, and k0 and c0 are the values ​​of the target calibration factor.

7. A solar cell IV test calibration device, characterized in that, include: The battery sample acquisition unit is used to acquire solar cell samples with known structural parameters. The lumped resistance calculation unit is used to obtain multiple variants of the solar cell sample by changing the number of fine grids or the line resistance of the fine grids based on the solar cell sample, and to calculate the lumped resistance of the fine grids of each variant. The lumped resistance is the ratio of the line resistance of the fine grids to the number of fine grids. The resistance difference calculation unit is used to test the first resistance of each variant in a specific few probe array configuration and the second resistance in a full probe array configuration, and to calculate the resistance difference between the first resistance and the second resistance. The calibration factor calculation unit is used to perform linear fitting on the lumped resistance of each variant fine grid, combined with the resistance difference of multiple variants, with the resistance difference as the dependent variable and the lumped resistance as the independent variable, to obtain the slope and intercept, and to use the slope and intercept as the calibration factor value of the solar cell sample under the specific few probe array configuration. The measured data calibration unit is used to acquire the solar cell under test, determine the target calibration factor value corresponding to the solar cell sample under test by combining the structural parameters of the solar cell under test and the lumped resistance of the fine grid, and then correct the measured IV data of the solar cell under test obtained under a specific few probe array configuration according to the calibration formula and the target calibration factor value.

8. A solar cell IV test and calibration device according to claim 7, characterized in that, The linear fitting relationship between the lumped resistance and the resistance difference is specifically as follows: In the formula, The resistance difference of the variant of the solar cell sample under a specific few-probe-row configuration and a full-probe-row configuration. For the specific few probe array configuration, the accurate test resistance. For the accurate test resistance under the aforementioned full probe array configuration. The average value of the unit gate line resistance of the sample variant, obtained by testing and calculation. The number of fine grids for the sample variant. The lumped resistance of the front surface. The lumped resistance of the back surface; The calibration relationship is as follows: in, These are the actual IV test data for the battery under test. The IV data is calibrated, and k0 and c0 are the values ​​of the target calibration factor.

9. A solar cell IV test and calibration terminal, characterized in that, include: Memory and processor; The memory is used to store program code corresponding to a solar cell IV test calibration as described in any one of claims 1 to 6; The processor is used to read and execute the program code.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium contains program code corresponding to a solar cell IV test calibration as described in any one of claims 1 to 6.

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