Method for optimizing electrostatic discharge performance and thin film transfer device

Abstract

The application provides an electrostatic discharge performance optimization method and a thin film transfer type device. The electrostatic discharge performance optimization method is applied to the thin film transfer type device and includes the following steps: an ESD pulse current is applied to a simulation model of the thin film transfer type device, and an ESD simulation result is obtained; based on the ESD simulation result, an electrostatic discharge vulnerable area is determined; an influence parameter of the thin film transfer type device is adjusted, and the temperature of the electrostatic discharge vulnerable area is adjusted to a value not greater than a preset temperature threshold, so as to optimize the electrostatic discharge performance of the thin film transfer type device; and the preset temperature threshold is equal to the value of the melting point of a functional material in the thin film transfer type device. The electrostatic discharge performance of the thin film transfer type device is optimized by reducing the heat generation of the electrostatic discharge vulnerable area or increasing the heat dissipation of the electrostatic discharge vulnerable area, so that the electrostatic discharge performance of the device is effectively improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chip manufacturing, in particular to an electrostatic discharge performance optimization method and a thin film transfer type device. BACKGROUND

[0002] In the field of chip manufacturing, in order to further improve the characteristics of thin film type functional materials, a thin film transfer process is usually used to transfer the functional thin film to a magnetic substrate, sapphire, glass or other substrates. This process usually uses transfer glue to achieve it, that is, the functional thin film is transferred and bonded to the substrate using glue. In particular, after the functional thin film is prepared into a chip, for some chip designs with special structures, when they are placed in an electrostatic discharge (ESD) environment, these special structure regions are prone to have too high current density and serious heating. The presence of transfer glue makes it difficult for these special structure regions to dissipate excessive heat in time, which can cause the temperature of the region to exceed the melting point of the functional material, and further cause the material in the region to overheat and melt, resulting in damage to the performance of the chip.

[0003] Currently, related technologies mostly use the method of optimizing transfer glue to improve the ESD performance of thin film transfer type chips, but the optimization of transfer glue is difficult, resulting in poor ESD performance optimization effect of thin film transfer type chips. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide an electrostatic discharge performance optimization method and a thin film transfer type device to solve the above problems.

[0005] In a first aspect, the embodiments of the present application provide an electrostatic discharge performance optimization method applied to a thin film transfer type device, the method comprising: applying an ESD pulse current to a simulation model of the thin film transfer type device to obtain an ESD simulation result; determining an electrostatic discharge vulnerable area based on the ESD simulation result; wherein the electrostatic discharge vulnerable area is an area of the thin film transfer type device whose temperature is higher than a preset temperature threshold in the simulation process; wherein the preset temperature threshold is equal to the value of the melting point of the functional material in the thin film transfer type device; adjusting an influence parameter of the thin film transfer type device to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold, so as to optimize the electrostatic discharge performance of the thin film transfer type device; wherein the influence parameter is a parameter that affects the temperature of the electrostatic discharge vulnerable area.

[0006] In the above implementation process, the electrostatic discharge performance of the thin film transfer type device is optimized by reducing the heat generation of the electrostatic discharge vulnerable area or increasing the heat dissipation of the electrostatic discharge vulnerable area, effectively improving the electrostatic discharge performance of the device.

[0007] In an implementation form of the first aspect, the adjusting the influencing parameter of the thin-film transfer type device to adjust the temperature of the electrostatic discharge vulnerable region to a value not greater than the preset temperature threshold comprises:

[0008] adjusting a bending curvature of a functional thin film layer of a local structure region where the electrostatic discharge vulnerable region is located to a preset curvature value to adjust the temperature of the electrostatic discharge vulnerable region to a value not greater than the preset temperature threshold;

[0009] and / or, adjusting a cross-sectional area of an overall structure layer where the electrostatic discharge vulnerable region is located to a first preset area, or adjusting a cross-sectional area of a local structure region where the electrostatic discharge vulnerable region is located to a second preset area to adjust the temperature of the electrostatic discharge vulnerable region to a value not greater than the preset temperature threshold;

[0010] and / or, adding a heat dissipation layer to the overall structure layer where the electrostatic discharge vulnerable region is located, or adding a heat dissipation layer to the local structure region where the electrostatic discharge vulnerable region is located to adjust the temperature of the electrostatic discharge vulnerable region to a value not greater than the preset temperature threshold.

[0011] In the implementation process, by designing the cross-shaped corner as an arc shape, or increasing the cross-sectional area, or adding a heat insulation layer, the current density is reduced or dispersed, so that the temperature of the electrostatic discharge vulnerable region is adjusted to a value not greater than the preset temperature threshold, the electrostatic discharge performance of the thin-film transfer type device is optimized, the electrostatic discharge performance of the thin-film device is effectively improved, and the manufacturing cost is reduced.

[0012] In an implementation form of the first aspect, the thin-film transfer type device comprises a thin-film transfer type Hall element.

[0013] The adjusting the cross-sectional area of the overall structure layer where the electrostatic discharge vulnerable region is located to the first preset area comprises: adjusting an overall thickness of the functional thin film layer to a first preset thickness; and transferring the functional thin film layer after the thickening treatment to a substrate by using transfer glue to prepare the thin-film transfer type Hall element comprising the substrate, a transfer glue layer and the functional thin film layer.

[0014] In the implementation process, by directly increasing the cross-sectional area of the functional thin film, the current density of the electrostatic discharge vulnerable region is reduced, and then the heat generation is reduced, the temperature of the electrostatic discharge vulnerable region is greatly reduced, and then the ESD performance of the thin-film transfer type device is improved.

[0015] In an implementation form of the first aspect, after the transferring the functional thin film layer after the thickening treatment to the substrate by using the transfer glue, the method further comprises:

[0016] Balancing resistance optimization is performed on the size of the Hall function region and the electrode region etched on the functional film layer;

[0017] Electrode evaporation is performed to complete the preparation of the thin film transfer type Hall element.

[0018] In the implementation process, the adverse effects of the film layer thickness increase on the resistance are reduced through balancing resistance optimization, and the success rate of device manufacturing is improved.

[0019] In an implementation form of the first aspect, the thin film transfer type device comprises a thin film transfer type Hall element.

[0020] The cross-sectional area of the local structure region where the electrostatic discharge vulnerable region is located is adjusted to a second preset area, including: adjusting the overall thickness of the functional film layer to a second preset thickness; reserving a third preset area of a protection region around the periphery of the electrostatic discharge vulnerable region on the functional film layer through photoetching development; etching and thinning the remaining region around the periphery of the protection region on the functional film layer to obtain the functional film layer with the local structure region where the electrostatic discharge vulnerable region is located being thickened; and transferring the functional film layer after the thickening treatment to the substrate using transfer glue to prepare the thin film transfer type Hall element comprising the substrate, the transfer glue layer and the functional film layer.

[0021] In the implementation process, by thickening the functional film of the local structure region where the electrostatic discharge vulnerable region is located, the current density can be dispersed, the heat production can be reduced, the temperature of the electrostatic discharge vulnerable region can be greatly reduced, and the ESD performance of the thin film transfer type device can be significantly improved without affecting the electrical performance of the device.

[0022] In an implementation form of the first aspect, the thin film transfer type device comprises a thin film transfer type Hall element.

[0023] The heat dissipation layer is additionally arranged in the local structure region where the electrostatic discharge vulnerable region is located, including: transferring the functional film layer to the substrate using transfer glue; reserving an electrode region on the functional film layer through photoetching development, and reserving a fourth preset area of a protection region around the periphery of the electrostatic discharge vulnerable region on the functional film layer through photoetching development; evaporating metal material on the electrode region, and evaporating a metal material layer with a preset thickness on the protection region and the electrostatic discharge vulnerable region to prepare the thin film transfer type Hall element comprising the substrate, the transfer glue layer and the functional film layer.

[0024] In the implementation process, the heat dissipation layer is in direct contact with the functional film in the ESD vulnerable area, and the current density in the ESD vulnerable area is dispersed by the heat dissipation layer, so that the temperature of the ESD area is greatly reduced, which is beneficial to improve the ESD performance of the thin film transfer type semiconductor device, and does not affect the electrical performance of the device.

[0025] In an implementation form of the first aspect, the thin film transfer type device comprises a thin film transfer type Hall element.

[0026] The heat dissipation layer added to the overall structure layer in the ESD vulnerable area comprises: depositing a passivation layer on the functional film layer, and evaporating a metal layer on the passivation layer; and transferring the functional film layer after the deposition film layer treatment to the substrate by using transfer glue, to prepare the thin film transfer type Hall element comprising the substrate, the transfer glue layer, the metal layer, the passivation layer and the functional film layer.

[0027] In the implementation process, by setting the metal layer and the passivation layer, the heat generated by the functional film layer can be effectively conducted to the metal layer, the heat is dispersed by the metal layer, the temperature of the ESD vulnerable area is greatly reduced, which is beneficial to improve the ESD performance of the thin film transfer type semiconductor device, and does not affect the electrical performance of the device.

[0028] In an implementation form of the first aspect, the thickness of the heat dissipation layer ranges from 100 nm to 3000 nm.

[0029] In the implementation process, the thickness is controlled in the above range, which has the advantages of high efficiency of heat insulation, protection layer, energy saving, wide applicability and customizability, and improves the effectiveness of heat insulation.

[0030] In an implementation form of the first aspect, the method further comprises: evaluating the ESD performance of the thin film transfer type device based on the functional material attribute parameters and the device electrical parameters of the thin film transfer type device.

[0031] In the implementation process, the ESD performance of the thin film transfer type device can be evaluated by the functional material attribute parameters and the device electrical parameters of the thin film transfer type device, compared with the ESD evaluation scheme in the related art, the above scheme can not perform complex ESD test, which is beneficial to reduce the ESD performance test cost of the thin film transfer type device, and improve the ESD performance test accuracy of the thin film transfer type device.

[0032] In a second aspect, the embodiments of the present application provide a thin film transfer type device, which comprises, from bottom to top, a substrate, a transfer adhesive layer and a functional thin film layer; the electrostatic discharge vulnerable area is located on the functional thin film layer; wherein the electrostatic discharge performance of the electrostatic discharge vulnerable area is optimized by the method provided in the first aspect or any one of the possible implementation manners of the first aspect.

[0033] In a third aspect, the embodiments of the present application provide a thin film transfer type device, which comprises, from bottom to top, a substrate, a transfer adhesive layer, a heat dissipation layer and a functional thin film layer; the electrostatic discharge vulnerable area is located on the functional thin film layer; the heat dissipation layer is laid between the transfer adhesive layer and the functional thin film layer, or the heat dissipation layer is wrapped outside the electrostatic discharge vulnerable area; wherein the electrostatic discharge performance of the electrostatic discharge vulnerable area is optimized by the method provided in the first aspect or any one of the possible implementation manners of the first aspect.

[0034] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or can be learned by practice of the application. The objects and other advantages of the present application will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments of the present application. It should be understood that the following drawings only show some of the embodiments of the present application, and therefore should not be considered as limiting the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0036] Figure 1 Flowchart of the electrostatic discharge performance optimization method provided by the embodiments of the present application;

[0037] Figure 2 Structure diagram of the thin film transfer type Hall element provided by the embodiments of the present application;

[0038] Figure 3 ESD pulse current diagram when the thin film transfer type Hall element is simulated by ESD provided by the embodiments of the present application;

[0039] Figure 4 ESD simulation result diagram of the thin film transfer type Hall element provided by the embodiments of the present application; wherein, Figure 4 (a) is a current density simulation result diagram when the thin film transfer type Hall element is simulated by ESD; Figure 4(b) Temperature simulation result schematic diagram when ESD simulation is performed on the thin film transfer type Hall element;

[0040] Figure 5 A structure schematic diagram of the thin film transfer type Hall element optimized from the device geometry for the embodiments of the present application is provided;

[0041] Figure 6 A structure schematic diagram of the thin film transfer type Hall element optimized from the device geometry for the embodiments of the present application is provided; Figure 5 A ESD simulation result schematic diagram of the thin film transfer type Hall element is shown;

[0042] Figure 7 A structure schematic diagram of the thin film transfer type Hall element after the local structure area where the electrostatic discharge vulnerable area is located is thickened for the embodiments of the present application is provided;

[0043] Figure 8 A ESD simulation result schematic diagram of the thin film transfer type Hall element after the functional film layer of the overall structure layer where the electrostatic discharge vulnerable area is located is thickened for the embodiments of the present application is provided;

[0044] Figure 9 A ESD simulation result schematic diagram of the thin film transfer type Hall element after the functional film layer of the local structure area where the electrostatic discharge vulnerable area is located is thickened for the embodiments of the present application is provided;

[0045] Figure 10 A structure schematic diagram of the thin film transfer type Hall element after a heat dissipation layer is added to the local structure area where the electrostatic discharge vulnerable area is located for the embodiments of the present application is provided;

[0046] Figure 11 A ESD simulation result schematic diagram of the thin film transfer type Hall element after a heat dissipation layer is added to the local structure area where the electrostatic discharge vulnerable area is located for the embodiments of the present application is provided;

[0047] Figure 12 A cross-sectional structure schematic diagram of the thin film transfer type Hall element after the functional film layer of the overall structure layer where the electrostatic discharge vulnerable area is located is thickened for the embodiments of the present application is provided;

[0048] Figure 13 A cross-sectional structure schematic diagram of the thin film transfer type Hall element after a heat dissipation layer is added to the overall structure layer where the electrostatic discharge vulnerable area is located for the embodiments of the present application is provided;

[0049] Figure 14 A simplified circuit schematic diagram of the electrostatic discharge circuit in the HBM mode for the embodiments of the present application is provided;

[0050] Figure 15 A electrostatic discharge curve schematic diagram in the HBM mode for the embodiments of the present application is provided.

[0051] The numbers in the diagram are as follows:

[0052] 10-Substrate; 20-Transfer adhesive layer; 30-Functional thin film layer; 41-Metal layer; 42-Passivation layer. Detailed Implementation

[0053] The technical solutions of the embodiments of this application will now be described with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0054] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. The terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one…" does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. The terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0055] Before introducing the embodiments of this application, a brief introduction to the technical concepts involved in this application will be given first.

[0056] ESD (Electro Static Discharge): Static electricity discharge, refers to the transfer of static electricity between objects with different static potentials. In the electronics industry, ESD is one of the main causes of damage to electronic equipment. Electronic equipment damage caused by ESD may affect the normal operation of chips, circuit boards and electronic components and other equipment, so ESD protection is very important. In order to prevent ESD from damaging electronic equipment, a series of protective measures need to be taken. First, the generation and accumulation of static electricity need to be controlled, such as by using anti-static materials, maintaining the humidity of the working environment, grounding, etc. Second, effective ESD protection measures need to be taken, such as using anti-static packaging, anti-static workbench, anti-static gloves, etc. In addition, ESD testing and evaluation of electronic equipment need to be carried out to ensure that it can withstand the effects of static electricity discharge.

[0057] Thin film transfer type component: A special electronic component whose manufacturing process involves transferring thin film materials from one substrate to another. This transfer usually refers to the release of thin film materials from the original substrate and transfer to the target substrate. The manufacturing process of thin film transfer type components usually includes the following steps: (1) Preparation of the substrate: Select the substrate material used to support and transport the thin film, such as silicon wafer, glass or other suitable substrate. (2) Thin film deposition: Deposit the required thin film material on the substrate, which can be achieved by various physical or chemical vapor deposition techniques, such as sputtering, chemical vapor deposition or physical vapor deposition, etc. (3) Preparation of release layer: Prepare a release layer below the thin film material, which plays a key role in the subsequent transfer process. Common release layer materials include polymers, oxides or other easily removable media. (4) Construction of support layer (glue layer): Build a support layer for supporting the thin film above the release layer. The support layer can be made of the same or different material as the thin film and has sufficient mechanical strength to maintain the structural integrity of the thin film. (5) Peeling and transferring of thin film: Peel the thin film from the original substrate by physical or chemical methods, and transfer it to the target substrate with the help of the support layer. This step is the key link in the entire process, and the conditions of peeling and transferring need to be precisely controlled to ensure the integrity and stability of the thin film. (6) Post-processing and structure adjustment: After the thin film is transferred to the target substrate, some post-processing and structure adjustment may be needed to optimize the performance and stability of the component, which may include patterning, doping, heat treatment, etc. of the thin film.

[0058] In the field of chip manufacturing, to further enhance the properties of thin-film functional materials, thin-film transfer processes are commonly used to transfer functional thin films onto other substrates such as magnetic substrates, sapphire, and glass. This process typically uses transfer adhesives, i.e., adhesives are used to transfer and bond the functional thin film to the substrate. Since the functional thin film is in direct contact with the transfer adhesive, and most transfer adhesives have a high coefficient of thermal expansion and low thermal conductivity, this significantly impacts the heat dissipation performance of the thin film material. Especially after the functional thin film is fabricated into a chip, for some chip designs with special structures (such as corners, steps, sharp corners, etc.), when placed in an electrostatic discharge (ESD) environment, these special structural areas are prone to excessively high current density and severe heat generation. The presence of the transfer adhesive makes it difficult for the component to dissipate excessive heat in time, causing the temperature in this area to exceed the melting point of the functional material, leading to overheating and melting, and ultimately damaging chip performance. Therefore, for thin-film transfer chips, the presence of transfer adhesives significantly weakens their ESD performance.

[0059] Based on this, embodiments of this application provide a method for optimizing electrostatic discharge performance. This method optimizes the electrostatic discharge performance of thin-film transfer devices by reducing heat generation in electrostatic discharge-prone areas or increasing heat dissipation in these areas, thereby effectively improving the electrostatic discharge performance of the devices.

[0060] Please see Figure 1 , Figure 1 A flowchart of an electrostatic discharge performance optimization method provided in this application embodiment, the method being applied to thin-film transfer devices, may include:

[0061] Step S110: Apply an ESD pulse current to the simulation model of the thin-film transfer device and obtain the ESD simulation results.

[0062] by Figure 2 Taking the cross-shaped thin-film transfer Hall element shown as an example, it will be as follows... Figure 3 The ESD pulse current curve shown is injected into the simulation model of the thin-film transfer Hall element, which simulates the actual process of ESD affecting the Hall element. This allows for the identification of the specific regions in the thin-film transfer Hall element most susceptible to ESD damage. The ESD simulation results of the thin-film transfer Hall element are as follows: Figure 4 As shown, by Figure 4 (a) It can be seen that during ESD simulation, the current density at the cross corner of the component can reach the highest level. ;Depend on Figure 4(b) It can be seen that the temperature at the cross corner of the element in the ESD simulation can reach 719.5°C. Through actual simulation verification, the area most prone to damage of the thin film transfer type Hall element in ESD is the cross corner of the element, because the current density at the cross corner is too high when ESD occurs, resulting in too high temperature at the cross corner. When the temperature exceeds the melting point of the functional layer material, the functional layer at the cross corner will overheat and melt, causing the chip performance to be damaged.

[0063] Step S120: determining the electrostatic discharge vulnerable area based on the ESD simulation result; wherein the electrostatic discharge vulnerable area is an area of the thin film transfer type device whose temperature is higher than a preset temperature threshold in the simulation process; wherein the preset temperature threshold is equal to the value of the melting point of the functional material in the thin film transfer type device.

[0064] In addition, when determining the electrostatic discharge vulnerable area, the geometric structure of the element can also be considered. According to experience, due to the concentration effect of the current path, high current density and serious heating are prone to occur in areas with bending structures such as corners, steps and sharp corners, and the bending structure area will usually become the electrostatic discharge vulnerable area.

[0065] Step S130: adjusting the impact parameter of the thin film transfer type device to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold, so as to optimize the electrostatic discharge performance of the thin film transfer type device; wherein the impact parameter is a parameter that affects the temperature of the electrostatic discharge vulnerable area.

[0066] The following describes several possible impact parameters of the thin film transfer type device. The impact parameter can include:

[0067] (1) Thickness of functional film: The thickness of the functional film or the area of the cross section of the functional film directly affects the current density. Generally, the thinner the film, the higher the current density per unit area, and the higher the risk of local overheating.

[0068] (2) Conductivity of functional film: The conductivity (resistivity) of the functional film determines the distribution of the current in the film. Poorly conductive materials will cause the current to concentrate in certain areas, increasing the local current density and the risk of local overheating.

[0069] (3) Thermal conductivity of transfer glue: When the thermal conductivity of the transfer glue is poor, the heat generated by the functional film cannot be dissipated in time, causing the local temperature to rise.

[0070] (4) Thickness of transfer glue: The thickness of the transfer glue affects the heat conduction efficiency. A thicker glue layer will increase the thermal resistance, making it difficult for heat to dissipate.

[0071] (5) Geometric structure design: The geometric structure (e.g., corner, step, etc.) of the device can cause current density concentration. For example, the current density at the corner is usually higher, and the temperature at the corner is also prone to rise when receiving an ESD impact. The corner area is prone to become an electrostatic discharge vulnerable area.

[0072] (6) Material properties of functional film: The material properties (e.g., melting point, heat resistance temperature) of the functional film determine the tolerance of the functional film under high current density. Generally, the lower the melting point of the material, the lower the maximum temperature it can withstand, and the more prone it is to be damaged by overheating.

[0073] (7) Design of heat dissipation structure: The design of the heat dissipation structure directly affects the conduction and dissipation of heat.

[0074] (8) Manufacturing process: The manufacturing process (e.g., photolithography, etching, thin film transfer, etc.) can affect the thickness uniformity, geometric shape, and material properties of the functional film. Inaccurate process can cause abnormal local current density, thereby increasing the risk of device overheating damage.

[0075] Based on the above influencing parameters, the ESD performance of the thin film transfer type device can be optimized from the following aspects:

[0076] Optionally, the step S130 comprises:

[0077] adjusting the bending radius of the functional film layer in the local structure area where the electrostatic discharge vulnerable area is located to a preset radius value, so as to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold;

[0078] and / or, adjusting the cross-sectional area of the entire structure layer where the electrostatic discharge vulnerable area is located to a first preset area, or adjusting the cross-sectional area of the local structure area where the electrostatic discharge vulnerable area is located to a second preset area, so as to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold;

[0079] and / or, adding a heat dissipation layer to the entire structure layer where the electrostatic discharge vulnerable area is located, or adding a heat dissipation layer to the local structure area where the electrostatic discharge vulnerable area is located, so as to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold. For example, in this embodiment:

[0080] For example, the thin film transfer type Hall element shown in the figure can be optimized from the device geometric structure, the functional film layer thickness, and the heat dissipation structure design to optimize the ESD performance of the thin film transfer type Hall element. Specifically: Figure 2

[0081] (1) Optimize the ESD performance from the device geometric angle: ​

[0082] As shown in Figure 5 , by optimizing the layout of the Hall element, the functional film in the element cross corner region can be prepared in a circular arc shape. After modifying the sharp cross corner region to a circular arc shape, the current path becomes smoother and the current distribution is more uniform. The circular arc design can disperse the current and avoid the current from concentrating in a certain point, thereby reducing the local current density and reducing the accumulation of local heat. Uniform current distribution makes the heat distribution more uniform, thereby reducing the local temperature and reducing the risk of thermal damage.

[0083] After ESD simulation of the element shown in Figure 5 , the ESD simulation results obtained are shown in Figure 6 , the actual simulation verifies that by designing the cross corner region as a circular arc, the current density can be effectively dispersed, and the heat generation is reduced. Compared with the unoptimized one, the temperature of the optimized corner region is only 375.1°C, and the temperature at the corner of the element is greatly reduced.

[0084] Exemplarily, the radius of the above-mentioned circular arc can be determined by ESD simulation and experiment, which can optimize the ESD performance of the Hall element while not affecting the electrical performance of the Hall element. For example, in a certain scenario, it has been verified by experiment that the radius of the circular arc of the functional film layer in the cross corner region of the thin film transfer type Hall element can be controlled in the range of 10~50 , which can improve the ESD performance of the Hall element while not affecting its electrical performance.

[0085] (2) Optimize ESD performance from the perspective of functional film layer thickness:

[0086] From the perspective of film layer thickness, the way to reduce the temperature of the electrostatic discharge vulnerable area is to directly increase the cross-sectional area of the local structure region where the electrostatic discharge vulnerable area is located, or directly increase the cross-sectional area of the entire structure layer where the electrostatic discharge vulnerable area is located, that is, by increasing the film thickness of the local structure region where the electrostatic discharge vulnerable area is located or the entire structure layer where the electrostatic discharge vulnerable area is located, thereby directly reducing the temperature of the electrostatic discharge vulnerable area, so that the temperature of the electrostatic discharge vulnerable area of the element in the ESD environment is greatly reduced, and the ESD performance of the thin film transfer type device is improved.

[0087] The structure of thickening the film thickness of the electrostatic discharge vulnerable area is shown in Figure 7 , and the arc-shaped region in Figure 7 is the thickened region. The thin film transfer type Hall element after the entire structure layer thickening and the local structure region thickening is respectively subjected to ESD simulation, and the simulation results are respectively shown in Figure 8 and Figure 9As shown, actual simulations verify that adjusting the cross-sectional area of ​​the functional thin film layer in the structural layer where the electrostatic discharge (ESD) vulnerable region is located can effectively reduce the temperature of the ESD vulnerable region in an ESD environment. Figure 8 It can be seen that after increasing the thickness of the functional thin film in the overall structural layer where the electrostatic discharge-prone areas are located, the temperature in the corner region can reach a maximum of 234.3℃. From Figure 9 It can be seen that by increasing the thickness of the functional thin film layer in the local structural region where the electrostatic discharge-prone area is located, the temperature in the corner region can reach up to 422.4℃. Compared with the unoptimized version, the temperature of the optimized component at the corner is significantly reduced.

[0088] For example, the thickness and area of ​​the thickening can be determined through ESD simulation and experiments. For instance, when thickening a local structural region where electrostatic discharge is likely to cause damage, the area of ​​the thickened region can be controlled between 150 and 1500 mm. This improves the ESD performance of Hall elements without affecting their electrical performance.

[0089] (3) Optimize ESD performance from the perspective of heat dissipation structure design:

[0090] From the perspective of heat dissipation structure design, another way to reduce the temperature of the electrostatic discharge (ESD) vulnerable area is to add one or more heat dissipation layers to the bottom of the overall structure layer where the ESD vulnerable area is located during the thin film transfer process, or to add one or more heat dissipation layers to the local structure area where the ESD vulnerable area is located. In this way, the heat dissipation layer is in direct contact with the functional thin film of the ESD vulnerable area, and the heat generated by the functional thin film can be effectively conducted to the heat dissipation layer. The heat can be dispersed by the heat dissipation layer, and the temperature of the ESD vulnerable area will be significantly reduced, which can improve the ESD performance of thin film transfer devices.

[0091] The structure of a thin-film transfer Hall element with a heat dissipation layer added to the local structural region where electrostatic discharge is easily damaged is as follows: Figure 10 As shown, Figure 10 The arc-shaped region in the figure represents the added heat dissipation layer. The ESD simulation results of the thin-film transfer Hall element after adding a heat dissipation layer to the local structural region where electrostatic discharge (ESD) damage is present as follows: Figure 11 As shown, actual simulations verify that adding a heat dissipation layer to the local structural region where the electrostatic discharge (ESD) vulnerability area is located, or adding a heat dissipation layer to the overall structural layer where the ESD vulnerability area is located, allows the heat dissipation layer to directly contact the functional thin film, thus dispersing the heat generated in the ESD vulnerability area. After adding a heat dissipation layer to the local structural region where the ESD vulnerability area is located, the highest temperature in the corner area can reach 557.8℃. Compared with the unoptimized version, the temperature of the optimized component at the corner is significantly reduced.

[0092] Exemplarily, the area or thickness of the heat dissipation layer can be determined through ESD simulation and experiment, and then the area or thickness of the heat dissipation layer is controlled within a reasonable range, so as to improve the ESD performance of the thin film transfer type Hall element while not affecting the electrical performance of the element.

[0093] The above scheme realizes the reduction or dispersion of the current density by designing the cross corner as an arc shape, or increasing the cross-sectional area, or increasing the heat insulation layer, so as to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold, optimize the electrostatic discharge performance of the thin film transfer type device, and effectively improve the electrostatic discharge performance of the thin film device and reduce the manufacturing cost.

[0094] The scheme of adjusting the cross-sectional area of the overall structure layer where the electrostatic discharge vulnerable area is located to a first preset area is introduced as follows:

[0095] Optionally, the above thin film transfer type device includes a thin film transfer type Hall element.

[0096] The step S130 of adjusting the cross-sectional area of the overall structure layer where the electrostatic discharge vulnerable area is located to a first preset area includes:

[0097] Step S131-1: adjusting the overall thickness of the functional thin film layer to a first preset thickness.

[0098] Step S131-2: transferring the functional thin film layer after the thickening treatment to the substrate by using transfer glue to prepare a thin film transfer type Hall element including a bottom, a transfer glue layer and a functional thin film layer.

[0099] Exemplarily, the structure of the thin film transfer type Hall element can include a Hall layer, an insulating layer, a conductive electrode, a substrate and a protective layer. The Hall layer is the core part of the Hall element and is made of semiconductor material. When a magnetic field is applied in the direction perpendicular to the current, a Hall voltage will be generated when the current passes through the Hall layer. The conductive electrode provides a current path to enable the current to flow through the Hall layer. The thickness and material of the Hall layer will affect the sensitivity and linearity of the element. Figure 12 As shown in the figure, the thickness of the functional thin film layer 30 is thickened by optimizing the overall structure of the chip. The functional thin film layer 30 after thickening is transferred to the substrate 10 by transfer glue to form a multi-layer thin film type device with the substrate 10, the transfer glue layer 20 and the functional thin film layer 30 vertically distributed from bottom to top. This method needs to control the thickness of the functional thin film, which can be increased by 10% to 50% based on the original thickness, and then the thin film transfer is performed. Through this method, the ESD performance of the thin film transfer type Hall element can be improved from 2000V to 4000V.

[0100] The above solution reduces the temperature of the electrostatic discharge (ESD) vulnerable area by directly increasing the cross-sectional area of ​​the functional thin film. The temperature of the ESD vulnerable area will be significantly reduced, thereby improving the ESD performance of the thin film transfer device.

[0101] Optionally, after step S131-2, step S130 may further include:

[0102] Step S131-3: Optimize the resistance of the Hall functional region and electrode region etched on the functional thin film layer 30.

[0103] Step S131-4: Perform electrode evaporation to complete the fabrication of the thin-film transfer Hall element.

[0104] The aforementioned balanced resistance optimization refers to the process of adjusting other parameters to keep the chip's resistance within the design requirements while modifying the chip structure (such as increasing the thickness of the functional thin film layer or changing the geometry) to improve the ESD performance of the components.

[0105] For example, increased film thickness directly affects device resistance. For chips with specific resistance requirements, it's necessary to simultaneously optimize the photomask layout of the functional areas and adjust their dimensions to balance resistance. To balance resistance, the photomask layout of the functional areas needs optimization, adjusting their dimensions before electrode deposition to meet the specific resistance requirements. Based on the resistance requirements, specialized design software can be used to design the Hall effect functional area layout, which typically involves precise control of line width, spacing, and layout to achieve the desired resistance value. Suitable photoresist can be selected, and steps such as coating, pre-baking, exposure, and development can be performed to ensure accurate replication of the Hall effect functional area. The dimensions of the Hall effect functional area, such as line width and spacing, can be adjusted as needed to balance resistance. Based on the device's resistance requirements and process conditions, suitable metal materials are selected for deposition; for example, gold, silver, and copper are commonly used electrode materials. After deposition, necessary post-processing, such as annealing, can be performed to improve adhesion and performance.

[0106] The above solution reduces the adverse effects of increased film thickness on resistance by optimizing the balance resistor, thereby improving the success rate of device manufacturing.

[0107] The following describes a scheme to adjust the cross-sectional area of ​​the local structural region where the electrostatic discharge-prone area is located to a second preset area:

[0108] Optionally, the above-mentioned thin-film transfer device includes: a thin-film transfer Hall element;

[0109] The above step S130 adjusts the cross-sectional area of ​​the local structural region where the electrostatic discharge-prone area is located to the second preset area, including:

[0110] Step S132-1: adjust the overall thickness of the functional film layer to a second preset thickness;

[0111] Step S132-2: reserve a third preset area of a protection region around the electrostatic discharge vulnerable region on the functional film layer by photoetching and developing;

[0112] Step S132-3: etch and thin the remaining area around the protection region on the functional film layer to obtain a functional film layer with the local structure area where the electrostatic discharge vulnerable region is located being thickened;

[0113] Step S132-4: transfer the functional film layer after thickening treatment to the substrate by using transfer adhesive to prepare a thin film transfer type Hall element including a bottom, a transfer adhesive layer and a functional film layer.

[0114] For example, as shown in the thin film transfer type Hall element after thickening the local structure area where the electrostatic discharge vulnerable region is located, Figure 7 Figure 7 The arc-shaped area in the above figure is the area after the local structure area where the electrostatic discharge vulnerable region is located is thickened alone. This method needs to control the film thickness, and after the film thickness is increased by 10% to 50% based on the original thickness, the film transfer is performed. In order to not affect the electrical performance of the device, two-step photoetching and two-step etching are needed to realize the individual thickening of the functional film of the ESD vulnerable region. After the film transfer and conventional pattern preparation are completed, further photoetching and etching are performed. The film at the remaining functional pattern position is etched and thinned to the original film thickness. After etching and thinning are completed, electrode evaporation is performed to form the substrate 10, the transfer adhesive layer 20 and the functional film layer 30 vertically distributed in multiple layers from bottom to top. Through this method, the ESD performance of the thin film transfer type Hall element can be improved from 2000V to 4000V.

[0115] For example, the ESD vulnerable region can also be protected during photoetching and etching, and the third preset area of the protection region can be controlled to be 150 to 1500 .

[0116] The above scheme can disperse the current density, reduce heat generation, and significantly reduce the temperature of the electrostatic discharge vulnerable region by thickening the functional film of the electrostatic discharge vulnerable region, which can significantly improve the ESD performance of the thin film transfer type device without affecting the electrical performance of the device.

[0117] The following describes a scheme of adding a heat dissipation layer in the local structure area where the electrostatic discharge vulnerable region is located:

[0118] Optionally, the above thin film transfer type device includes a thin film transfer type Hall element;​

[0119] Step S130 above involves adding a heat dissipation layer to the local structural region where the electrostatic discharge-prone area is located, including:

[0120] Step S133-1: Transfer the functional thin film layer 30 onto the substrate 10 using transfer adhesive;

[0121] Step S133-2: The electrode area is reserved on the functional thin film layer 30 by photolithography, and a fourth preset area of ​​protection area is reserved around the periphery of the electrostatic discharge-prone area on the functional thin film layer 30 by photolithography.

[0122] Step S133-3: Deposit metal material into the electrode area, and deposit a metal material layer of a predetermined thickness into the protective area and the area susceptible to electrostatic discharge damage, in order to prepare a thin film transfer type Hall element including a base 10, a transfer adhesive layer 20 and a functional thin film layer 30.

[0123] For example, such as Figure 10 As shown, by optimizing the chip layout, the ESD-sensitive areas are individually covered with a heat dissipation layer. The metal deposition photolithography pattern is optimized, and after thin film transfer and pattern fabrication, the ESD-sensitive areas are covered with a heat dissipation layer during the electrode evaporation step, forming a multilayer thin-film device with the substrate 10, transfer adhesive layer 20, and functional thin film layer 30 vertically distributed from bottom to top. The thickness of the heat dissipation layer can be controlled at 500 nm, and the area of ​​the heat dissipation layer can be controlled at 1000 nm. In this way, the ESD performance of thin-film transfer Hall elements can be increased from 2000V to 4000V.

[0124] For example, the fourth preset area of ​​the aforementioned protected region can be controlled within the range of 150 to 1500. .

[0125] In this way, the heat dissipation layer is in direct contact with the functional thin film in the electrostatic discharge (ESD) vulnerable area. The current density in the ESD vulnerable area is dispersed by the heat dissipation layer, which significantly reduces the temperature of the ESD region. This is beneficial to improving the ESD performance of thin-film transfer semiconductor devices without affecting the device's electrical performance.

[0126] The following describes a solution for adding a heat dissipation layer to the overall structural layer in areas prone to electrostatic discharge damage:

[0127] Please see Figure 13 Optionally, thin-film transfer devices include: thin-film transfer Hall elements;

[0128] Step S130 above involves adding a heat dissipation layer to the overall structural layer where the electrostatic discharge-prone area is located, including:

[0129] Step S134-1: depositing a passivation layer 42 on the functional thin film layer 30, and evaporating a metal layer 41 on the passivation layer 42;

[0130] Step S134-2: transferring the functional thin film layer 30 after the deposition film layer treatment to the substrate by using the transfer adhesive to prepare a thin film transfer type Hall element including the bottom 10, the transfer adhesive layer 20, the metal layer 41, the passivation layer 42, and the functional thin film layer 30.

[0131] For example, the metal layer 41 and the passivation layer 42 can jointly constitute a heat dissipation layer. By optimizing the overall structure of the chip, the passivation layer 42 and the metal layer 41 are added at the bottom of the functional thin film layer 30. The passivation layer 42 can be used for insulation protection of the functional thin film layer 30 from the bottom metal layer 41, and the passivation layer 42 can be used to improve the heat dissipation of the functional thin film. In this way, the passivation layer 42 of SiNx, SiO2, etc. is grown on the surface of the functional thin film by using the vapor deposition method before the thin film transfer, and the thickness of the passivation layer 42 can be controlled to be 100-3000 nm. Then, the metal layer 41 of Cu, Au, etc. is evaporated on the surface of the passivation layer 42 by using the electron beam evaporation method, and the thickness of the metal layer 41 can be controlled to be 100-3000 nm. After completion, the thin film transfer, pattern preparation, and electrode evaporation are performed to form a multi-layer thin film type device with the substrate 10, the transfer adhesive layer 20, the metal layer 41, the passivation layer 42, and the functional thin film layer 30 vertically distributed from bottom to top. By this method, the ESD performance of the thin film transfer type Hall element can be improved from 2000V to 4000V.

[0132] The above scheme sets the metal layer 41 and the passivation layer 42, so that the heat generated by the functional thin film layer 30 can be effectively conducted to the metal layer 41, the heat is dispersed by the metal layer 41, and the temperature of the electrostatic discharge vulnerable area is greatly reduced, which is beneficial to improve the electrostatic discharge performance of the thin film transfer type semiconductor device, while not affecting the electrical performance of the device.

[0133] Optionally, the thickness range of the heat dissipation layer includes a thickness range of 100 nm to 3000 nm.

[0134] For example, the thickness of the heat dissipation layer added at the bottom of the functional thin film layer 30 as a whole or added separately at the electrostatic discharge vulnerable area (i.e. the heat dissipation layer composed of the metal layer 41 and the passivation layer 42) can be controlled to be any thickness value within the range of 100 nm to 3000 nm. Thinner films generally have higher current density because they can transmit current faster. However, too thin films can affect the mechanical stability and reliability of the device. Therefore, the thickness is controlled within the above range, which has the advantages of high heat insulation, protective layer, energy saving, wide applicability, and customizability, etc., and improves the effectiveness of heat insulation.

[0135] It can be understood that after the electrostatic discharge performance of the thin film transfer type device is optimized, the electrostatic discharge performance of the thin film transfer type device can also be evaluated to determine whether the electrostatic discharge performance of the thin film transfer type device is effectively optimized. In the related art, the scheme for evaluating the ESD performance of the component device generally needs to use expensive ESD test equipment, and the test process is relatively complex. Generally, the ESD performance of the component is evaluated by the following steps: first, a basic performance test is needed, then a destructive test is directly performed on it using an ESD device, after completion, the basic performance test is repeated, and by comparing the performance change and the morphology damage of the component before and after the test, the ESD performance of the component is evaluated. In addition, due to the complicated chip process, the finally manufactured component device generally has batch differences, and even the basic performance of each component also has differences, which will cause the ESD performance of the component to fluctuate. Therefore, the ESD performance evaluation scheme in the related art has high cost, long time consumption, and low accuracy. Based on this, the embodiments of the present application provide the following scheme:

[0136] Optionally, the electrostatic discharge performance optimization method further includes: evaluating the electrostatic discharge performance of the thin film transfer type device based on the functional material attribute parameters and the device electrical parameters of the thin film transfer type device.

[0137] Optionally, the functional material attribute parameters can include the melting point of the functional material, the mass of the functional material, the specific heat capacity of the functional material, etc., and the device electrical parameters can include the resistance of the device, etc.

[0138] It can be understood that the ESD performance test can be divided into four types: human body discharge mode (HBM: Human-Body Model), machine discharge mode (Machine Model), component charging mode (CDM: Charge-Device Model), and electric field induction mode (FIM: Field-Induced Model). The following describes a calculation method for the highest ESD level that the thin film transfer type device can withstand in the HBM mode:

[0139]

[0140] wherein, is the melting point of the functional material; is the ambient temperature; is the mass of the functional material; is the specific heat capacity of the functional material; is the functional material and environmental contact surface area of the thin film transfer type device; is the resistance of the thin film transfer type device; is the pulse current flow time; and The first and second approximate coefficients of the electrostatic discharge circuit, respectively.

[0141] The derivation process of the above formula is as follows:

[0142] The electrostatic discharge circuit in HBM mode can be simplified as an RLC circuit as shown in Figure 14 The discharge curve of the RLC circuit is usually a pulse curve as shown in Figure 15 The peak pulse current under 2KV can reach several milliamperes, and the pulse current curve can be approximated as:

[0143]

[0144]

[0145]

[0146] wherein, is the pulse current; is the ESD level; , and are the ESD resistance, ESD capacitance and ESD inductance, respectively; according to the MIL-STD-883C method 3015.7 standard, , ;

[0147] The heat generated when the pulse current flows through the thin film transfer type device is:

[0148]

[0149] wherein, is the pulse current ; is the device resistance of the thin film transfer type device; is the duration of the pulse current flow, usually only a few tens of nanoseconds;

[0150] In addition, for the bare chip ESD test, the convection heat dissipation of the device and the external environment can also be considered:

[0151]

[0152] wherein, the air convection heat transfer coefficient can be taken as 5 W / (m²·K); is the temperature of the device functional material;

[0153] The residual heat of the device functional material is:

[0154]

[0155] ​The relationship between heat and temperature for functional materials is as follows:

[0156]

[0157] in, For the quality of functional materials; Specific heat capacity of functional materials; To address the initial problems of the device, the embodiments of this application assume... ;

[0158] Therefore, we can conclude that:

[0159]

[0160] Assuming the highest temperature a functional material can withstand is its melting point , that is ,So:

[0161]

[0162] From the above The calculation formula shows that the ESD level that a thin-film transferable device can withstand is mainly related to the quality, specific heat capacity, and contact area of ​​the functional thin film layer. Among the optimization methods mentioned above, the optimization method of thickening the functional thin film in the overall structural layer where the electrostatic discharge (ESD) vulnerable area is located, and the optimization method of thickening the functional thin film in the local structural region where the ESD vulnerable area is located, mainly optimizes the quality of the functional thin film layer. Adding a heat dissipation layer to the overall structural layer where the ESD vulnerable area is located, and adding a heat dissipation layer to the local structural region where the ESD vulnerable area is located, optimizes the specific heat capacity and contact area. Therefore, through the above... The calculation formula also shows that the optimization methods introduced in the above embodiments are effective ESD performance optimization methods.

[0163] The above scheme introduces an ESD performance evaluation scheme in the HBM environment. It is understood that the calculation principle of the ESD evaluation scheme in other environments is similar to that of the ESD performance evaluation scheme in the HBM environment, and the embodiments of this application will not be repeated.

[0164] The above-mentioned scheme can evaluate the ESD performance of thin-film transfer devices by using the functional material properties and electrical parameters of the devices. Compared with the ESD evaluation schemes in related technologies, the above-mentioned scheme can avoid complex ESD testing, which helps to reduce the cost of ESD performance testing of thin-film transfer devices and improve the accuracy of ESD performance testing of thin-film transfer devices.

[0165] Based on the same inventive concept, the embodiment of the present application further provides a thin film transfer type device, which comprises, from bottom to top, a substrate 10, a transfer adhesive layer 20 and a functional thin film layer 30; an electrostatic discharge vulnerable area is located on the functional thin film layer 30; wherein the electrostatic discharge performance of the electrostatic discharge vulnerable area is optimized by using the electrostatic discharge performance optimization method.

[0166] Based on the same inventive concept, the embodiment of the present application further provides a thin film transfer type device, which comprises, from bottom to top, a substrate 10, a transfer adhesive layer 20, a heat dissipation layer and a functional thin film layer 30; an electrostatic discharge vulnerable area is located on the functional thin film layer 30; the heat dissipation layer is laid between the transfer adhesive layer 20 and the functional thin film layer 30 or the heat dissipation layer is wrapped outside the electrostatic discharge vulnerable area.

[0167] Exemplarily, since the principle of solving problems of the thin film transfer type device in the embodiment of the present application is similar to the foregoing embodiment of the electrostatic discharge performance optimization method, the implementation of the thin film transfer type device in the present embodiment can refer to the description in the foregoing embodiment of the electrostatic discharge performance optimization method, and the repeated parts will not be described herein.

[0168] The above merely provides the embodiments of the present application and is not used for limiting the protection scope of the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for optimizing electrostatic discharge performance, characterized in that, Applied to thin-film transfer devices, the method includes: An ESD pulse current is applied to the simulation model of the thin-film transfer device to obtain ESD simulation results; Based on the ESD simulation results, regions susceptible to electrostatic discharge damage are identified; wherein, the regions susceptible to electrostatic discharge damage are those where the temperature of the thin-film transfer device exceeds a preset temperature threshold during the simulation process; wherein, the preset temperature threshold is equal to the melting point of the functional material in the thin-film transfer device. The influence parameters of the thin-film transfer device are adjusted to adjust the temperature of the electrostatic discharge vulnerable area to a value not exceeding the preset temperature threshold, so as to optimize the electrostatic discharge performance of the thin-film transfer device; wherein, the influence parameters are parameters that affect the temperature of the electrostatic discharge vulnerable area. The step of adjusting the influence parameters of the thin-film transfer device to adjust the temperature of the electrostatic discharge-prone region to a value not exceeding the preset temperature threshold includes: The curvature of the functional thin film layer in the local structural region where the electrostatic discharge-prone area is located is adjusted to a preset curvature value, so as to adjust the temperature of the electrostatic discharge-prone area to a value not greater than the preset temperature threshold. And / or, adjust the cross-sectional area of ​​the overall structural layer where the electrostatic discharge vulnerable area is located to a first preset area, or adjust the cross-sectional area of ​​the local structural area where the electrostatic discharge vulnerable area is located to a second preset area, so as to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold. And / or, a heat dissipation layer is added to the overall structural layer where the electrostatic discharge vulnerable area is located, or a heat dissipation layer is added to the local structural area where the electrostatic discharge vulnerable area is located, so as to adjust the temperature of the electrostatic discharge vulnerable area to a value not greater than the preset temperature threshold.

2. The electrostatic discharge performance optimization method according to claim 1, characterized in that, The thin-film transfer device includes: a thin-film transfer Hall element; Adjusting the cross-sectional area of ​​the overall structural layer containing the electrostatic discharge-prone area to a first preset area includes: Adjust the overall thickness of the functional thin film layer to a first preset thickness; The thickened functional thin film layer is transferred onto a substrate using transfer adhesive to prepare the thin film transfer type Hall element comprising the substrate, the transfer adhesive layer, and the functional thin film layer.

3. The electrostatic discharge performance optimization method according to claim 2, characterized in that, After transferring the thickened functional film layer onto the substrate using transfer adhesive, the method further includes: The dimensions of the Hall functional region and electrode region etched on the functional thin film layer are optimized by balancing the resistance. Electrode evaporation is performed to complete the fabrication of the thin-film transfer Hall element.

4. The electrostatic discharge performance optimization method according to claim 1, characterized in that, The thin-film transfer device includes: a thin-film transfer Hall element; Adjusting the cross-sectional area of ​​the local structural region where the electrostatic discharge-prone area is located to a second preset area includes: Adjust the overall thickness of the functional thin film layer to a second preset thickness; A third, predetermined protective area is reserved around the periphery of the electrostatic discharge-prone area on the functional thin film layer by photolithography. The remaining area surrounding the protected area on the functional thin film layer is etched and thinned to obtain a functional thin film layer in which the local structural area where the electrostatic discharge vulnerable area is located is thickened. The thickened functional thin film layer is transferred onto a substrate using transfer adhesive to prepare the thin film transfer type Hall element comprising the substrate, the transfer adhesive layer, and the functional thin film layer.

5. The electrostatic discharge performance optimization method according to claim 1, characterized in that, The thin-film transfer device includes: a thin-film transfer Hall element; The addition of a heat dissipation layer to the local structural region where the electrostatic discharge-prone area is located includes: The functional thin film layer is transferred onto the substrate using transfer adhesive; Electrode areas are reserved on the functional thin film layer by photolithography, and a fourth predetermined area of ​​protective region is reserved around the periphery of the electrostatic discharge-prone area on the functional thin film layer by photolithography. Metal material is vapor-deposited into the electrode area, and a metal material layer of a predetermined thickness is vapor-deposited into the protective area and the electrostatic discharge-prone area to prepare a thin-film transfer Hall element comprising a base, a transfer adhesive layer and a functional thin film layer.

6. The electrostatic discharge performance optimization method according to claim 1, characterized in that, The thin-film transfer device includes: a thin-film transfer Hall element; The addition of a heat dissipation layer to the overall structural layer in the area susceptible to electrostatic discharge damage includes: A passivation layer is deposited on the functional thin film layer, and a metal layer is evaporated on the passivation layer; The functional thin film layer, after deposition treatment, is transferred onto a substrate using transfer adhesive to prepare a thin film transfer type Hall element comprising the substrate, a transfer adhesive layer, the metal layer, the passivation layer, and the functional thin film layer.

7. The electrostatic discharge performance optimization method according to claim 5 or 6, characterized in that, The thickness of the heat dissipation layer ranges from 100 nm to 3000 nm.

8. The method for optimizing electrostatic discharge performance according to any one of claims 1 to 6, characterized in that, The method further includes: The electrostatic discharge performance of the thin-film transfer device is evaluated based on its functional material properties and electrical parameters.

9. A thin-film transfer device, characterized in that, The device comprises: a substrate, a transfer adhesive layer, and a functional thin film layer disposed from bottom to top; the electrostatic discharge vulnerable region is located on the functional thin film layer; wherein the electrostatic discharge performance of the electrostatic discharge vulnerable region is optimized using any one of claims 1 to 8.

10. A thin-film transfer device, characterized in that, The device comprises, from bottom to top, a substrate, a transfer adhesive layer, a heat dissipation layer, and a functional thin film layer; the electrostatic discharge vulnerable area is located on the functional thin film layer; the heat dissipation layer is disposed between the transfer adhesive layer and the functional thin film layer, or the heat dissipation layer is wrapped around the outside of the electrostatic discharge vulnerable area; wherein the electrostatic discharge performance of the electrostatic discharge vulnerable area is optimized using any one of claims 1 to 8.

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