Semiconductor equipment punch forming process method

Abstract

The invention relates to the technical field of punch forming, in particular to a semiconductor equipment punch forming process method which comprises the following steps: performing gradient temperature pretreatment on a metal blank to improve the grain uniformity and the phase change completeness and reduce the pretreatment period and the punch cracking rate; the multistage progressive stamping die set is adopted to execute differential stamping, so that the service life of the die is prolonged, and the product flatness is improved; axial ultrasonic vibration is synchronously applied in the stamping process, so that the stamping energy consumption and the die wear rate are reduced, and the product size stability is improved; residual stress distribution of a stamping area is monitored in real time through an embedded stress sensor, a dynamic compensation mechanism is triggered when it is detected that the stress concentration coefficient exceeds 1.8, and the stress monitoring precision and the compensation response speed are improved; and in-situ annealing treatment is carried out in an inert gas environment after stamping is completed, so that the grain size uniformity is improved, and the heat treatment deformation is reduced.

Description

Technical Field

[0001] This invention relates to the field of stamping technology, and more particularly to a stamping process for semiconductor equipment. Background Technology

[0002] Semiconductor equipment stamping is a forming method that uses a stamping press and dies to apply external force to semiconductor materials, causing them to undergo plastic deformation or separation, thereby obtaining workpieces of the desired shape and size. Stamping is mainly used to manufacture components in semiconductor equipment. However, the stamping process encounters problems such as material deformation, insufficient precision, low efficiency, and die wear.

[0003] In view of this, we propose a semiconductor device stamping process to solve the existing problems. Summary of the Invention

[0004] The purpose of this invention is to provide a stamping process method for semiconductor devices to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor equipment stamping process method, comprising:

[0006] S1: Gradient temperature pretreatment of metal billet;

[0007] S2: Differential stamping is performed using a multi-stage progressive stamping die set;

[0008] S3: Axial ultrasonic vibration is applied synchronously during the stamping process;

[0009] S4: Real-time monitoring of residual stress distribution in the stamping area via embedded stress sensors; triggering a dynamic compensation mechanism when the stress concentration factor exceeds 1.8.

[0010] S5: After stamping, perform in-situ annealing in an inert gas environment.

[0011] Furthermore, the operating steps of S1 include:

[0012] A1. Electromagnetic-infrared composite heating stage: In a vacuum environment, alternating electromagnetic field and short-wave infrared synergistic heating are used to heat the billet to the target temperature at a rate of 80-120℃ / s.

[0013] A2. Multi-field coupling insulation stage: Apply axial static magnetic field and radial ultrasonic waves at the target temperature;

[0014] A3. Directional phase change cooling stage: A microchannel array spray system is used to implement cooling in a zoned and controllable manner;

[0015] A4. In-situ tempering stage: When cooled to 20-50℃ below Ms point, pulsed laser scanning is started to achieve non-equilibrium tissue control.

[0016] Furthermore, the partitioned controllable method described in A3 is divided into a core area and a surface area. Liquid nitrogen is used for cooling in the core area, while nanoparticles are used to enhance the cooling of the heat exchange fluid in the surface area.

[0017] Furthermore, the operation steps of S2 include:

[0018] B1. Fractal cooling and synergistic stamping: A temperature difference control system is set up between adjacent stamping stations to keep the upstream mold at 200-250℃ and the downstream mold at 80-120℃, forming a gradient temperature field.

[0019] B2. Electromagnetic rheodynamic edge pressing control: An independent electromagnetic rheodynamic edge pressing ring is configured at each work station to generate an edge pressing force distribution with a gradient of 5-50MPa in real time.

[0020] B3. Piezoelectric micro-strain compensation: Apply reverse micro-strain at the end of the stamping stroke by embedding a piezoelectric ceramic array into the mold cavity;

[0021] B4. Cross-station material rheology monitoring: A distributed fiber optic grating sensor array is used to monitor the material flow status between stages in real time. When the flow velocity difference between adjacent stations exceeds 15%, a coordinated speed regulation mechanism is triggered.

[0022] Furthermore, the operation steps of S3 include:

[0023] C1. Frequency sweeping-standing wave composite vibration mode: linear frequency sweeping vibration is used in the initial stage of stamping, and it is switched to fixed frequency standing wave vibration when the stamping depth reaches 50%.

[0024] C2. Pulse energy gradient control: Divide a single stamping process into three energy intervals;

[0025] C3. Dynamic impedance matching: By monitoring the impact force signal in real time, when the impact force change rate dF / dt > 10kN / ms, the vibration amplitude is automatically increased by 20-30%.

[0026] C4. Phase transition synergistic control: Local laser irradiation points are arranged at the vibration node positions to induce dislocation recombination.

[0027] Furthermore, the three energy ranges described in C2 are divided into a contact range, a forming range, and a demolding range; in the contact range, the vibration amplitude is 3-5 μm and the duty cycle is 30-50%; in the forming range, the vibration amplitude is 8-12 μm and a continuous wave mode is used; in the demolding range, the vibration amplitude is 15-20 μm and a pulse train mode is used with a pulse interval of 0.5-2 ms.

[0028] Furthermore, the operation steps of S4 include:

[0029] D1. Flexible array stress sensing: Integrating a flexible sensor array on the surface of the mold cavity;

[0030] D2. Digital twin reconstruction of stress field: Construct a three-dimensional stress field in real time based on sensor data, calculate the stress concentration factor, and trigger compensation when the stress concentration factor is ≥1.8;

[0031] D3. Electromagnetic-mechanical coordinated compensation: Executes graded response;

[0032] D4. Entropy stability assessment: After compensation, the information entropy of the stress field is calculated. When the information entropy of the stress field is ≥4.5, it is considered qualified.

[0033] Furthermore, the flexible sensor array described in D1 includes a quantum dot strain sensing layer, a magnetostrictive stress sensing layer, and a temperature self-compensation unit; the graded response described in D3 is divided into first-level compensation, second-level compensation, and third-level compensation. In the first-level compensation, a transverse alternating magnetic field is applied; in the second-level compensation, the piezoelectric micro-motion array on the mold surface is activated; and in the third-level compensation, laser shock wave irradiation is used.

[0034] Furthermore, the operating steps of S5 include:

[0035] E1. Plasma activation heating: Radio frequency glow discharge is used to generate ionized inert gas plasma, which causes the surface of the workpiece to jump to the target temperature at a rate of 300-500℃ / s.

[0036] E2, Multiphase field coupling insulation: Simultaneously apply axial electrostatic field, radial alternating magnetic field, and longitudinal ultrasonic wave at the target temperature;

[0037] E3, Quantum Dot Catalytic Slow Cooling: Three-stage stepped cooling.

[0038] Furthermore, in E3, for the first stage: when the temperature drops from 800 to 600°C, an inert gas flow carrying CdSe / ZnS quantum dots is introduced, with a cooling rate of 80-120°C / min; for the second stage: when the temperature drops from 600 to 400°C, a pulsed laser array is applied, with a cooling rate of 25-40°C / min; for the third stage: when the temperature drops from 400 to 200°C, a piezoelectric micro-vibration platform is activated, with a cooling rate of 5-15°C / min.

[0039] Compared with the prior art, the beneficial effects of the present invention are:

[0040] This invention employs gradient temperature pretreatment of metal billets, improving grain uniformity and phase transformation completeness while reducing pretreatment cycle and stamping crack rate. Differential stamping is performed using a multi-stage progressive stamping die set, improving die life and product flatness. Simultaneous axial ultrasonic vibration during stamping reduces stamping energy consumption and die wear, improving product dimensional stability. Residual stress distribution in the stamping area is monitored in real-time using an embedded stress sensor; a dynamic compensation mechanism is triggered when the stress concentration factor exceeds 1.8, improving stress monitoring accuracy and compensation response speed. In-situ annealing in an inert gas environment after stamping improves grain size uniformity and reduces heat treatment deformation. Attached Figure Description

[0041] Figure 1 This is a flowchart illustrating a semiconductor device stamping process according to the present invention.

[0042] Figure 2 This is a flowchart illustrating the gradient temperature pretreatment process for metal billets according to the present invention.

[0043] Figure 3 This is a flowchart illustrating the process of differential stamping using a multi-stage progressive stamping die set according to the present invention.

[0044] Figure 4 This is a flowchart illustrating the process of synchronously applying axial ultrasonic vibration during the stamping process of the present invention.

[0045] Figure 5 This is a flowchart illustrating the real-time monitoring of residual stress distribution in the stamping area and the triggering of a dynamic compensation mechanism according to the present invention.

[0046] Figure 6 This is a flowchart illustrating the in-situ annealing process in an inert gas environment according to the present invention. Detailed Implementation

[0047] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0048] Example 1

[0049] like Figure 1 As shown, a semiconductor device stamping process method includes:

[0050] S1: Gradient temperature pretreatment of metal billet;

[0051] S2: Differential stamping is performed using a multi-stage progressive stamping die set;

[0052] S3: Axial ultrasonic vibration is applied synchronously during the stamping process;

[0053] S4: Real-time monitoring of residual stress distribution in the stamping area via embedded stress sensors; triggering a dynamic compensation mechanism when the stress concentration factor exceeds 1.8.

[0054] S5: After stamping, perform in-situ annealing in an inert gas environment.

[0055] like Figure 2 As shown, the operation steps of S1 include:

[0056] A1. Electromagnetic-infrared composite heating stage: In a vacuum environment, alternating electromagnetic field and short-wave infrared synergistic heating are used to heat the billet to the target temperature at a rate of 80-120℃ / s.

[0057] A2. Multi-field coupling insulation stage: Apply axial static magnetic field and radial ultrasonic waves at the target temperature;

[0058] A3. Directional phase change cooling stage: A microchannel array spray system is used to implement cooling in a zoned and controllable manner. The zoned and controllable manner is divided into a core zone and a surface zone. Liquid nitrogen is atomized for cooling in the core zone, and nanoparticle-enhanced heat exchange fluid is used for cooling in the surface zone.

[0059] A4. In-situ tempering stage: When cooled to 20-50℃ below Ms point, pulsed laser scanning is started to achieve non-equilibrium tissue control.

[0060] In A1, the pressure of the vacuum environment is ≤10. -3 Pa, the frequency of the alternating electromagnetic field is 50-100kHz, the short-wave infrared wavelength is 1.2-1.8μm, the target temperature T1=AC3+(50-80)℃, and AC3 is the temperature at which the material is fully austenitized.

[0061] In A2, the axial static magnetic field strength is 0.5-1.2T, the radial ultrasonic frequency is 20-30kHz, and the holding time is t=K·D, where K=0.8-1.2s / mm and D is the characteristic dimension of the billet.

[0062] In A3, the cooling rate of atomized liquid nitrogen is ≥100℃ / s, the cooling rate of nanoparticle-enhanced heat exchange fluid is 30-50℃ / s, and the nanoparticle-enhanced heat exchange fluid contains Al2O3 / TiO2 nanoparticles at a concentration of 5-8 vol%.

[0063] In A4, the power density of pulsed laser scanning is 15-25 J / cm². 2 The overlap rate of the light spots is considered to be 40-60%.

[0064] like Figure 3 As shown, the operation steps of S2 include:

[0065] B1. Fractal cooling and synergistic stamping: A temperature difference control system is set up between adjacent stamping stations to keep the upstream mold at 200-250℃ and the downstream mold at 80-120℃, forming a gradient temperature field.

[0066] B2. Electromagnetic rheodynamic edge pressing control: An independent electromagnetic rheodynamic edge pressing ring is configured at each work station to generate an edge pressing force distribution with a gradient of 5-50MPa in real time.

[0067] B3. Piezoelectric micro-strain compensation: Apply reverse micro-strain at the end of the stamping stroke by embedding a piezoelectric ceramic array into the mold cavity;

[0068] B4. Cross-station material rheology monitoring: A distributed fiber optic grating sensor array is used to monitor the material flow status between stages in real time. When the flow velocity difference between adjacent stations exceeds 15%, a coordinated speed regulation mechanism is triggered.

[0069] In B2, the excitation current of the independent electromagnetic rheostat pressure-side coil is adjustable from 0.5 to 2.0 A.

[0070] In B3, the piezoelectric ceramic array has a resolution of ±0.1 μm, an amplitude of 0.5–3 μm for the reverse microstrain, and a frequency of 1–5 kHz.

[0071] like Figure 4 As shown, the operation steps of S3 include:

[0072] C1. Frequency sweeping-standing wave composite vibration mode: linear frequency sweeping vibration is used in the initial stage of stamping, and it is switched to fixed frequency standing wave vibration when the stamping depth reaches 50%.

[0073] C2. Pulse Energy Gradient Control: The single stamping process is divided into three energy intervals: contact interval, forming interval, and demolding interval. In the contact interval, the vibration amplitude is 3-5 μm, and the duty cycle is 30-50%. In the forming interval, the vibration amplitude is 8-12 μm, using a continuous wave mode. In the demolding interval, the vibration amplitude is 15-20 μm, using a pulse train mode, and the pulse interval is 0.5-2 ms.

[0074] C3. Dynamic impedance matching: By monitoring the impact force signal in real time, when the impact force change rate dF / dt > 10kN / ms, the vibration amplitude is automatically increased by 20-30%.

[0075] C4. Phase transition synergistic control: Local laser irradiation points are arranged at the vibration node positions to induce dislocation recombination.

[0076] In C1, the frequency of the linear sweep oscillation changes continuously between 18-25kHz, and the frequency accuracy of the fixed-frequency standing wave oscillation is ±0.1%.

[0077] In C3, the sampling rate of the real-time monitoring punch force signal is ≥10kHz.

[0078] In C4, the power density at the local laser irradiation point is 80-120 W / cm². 2 .

[0079] like Figure 5 As shown, the operation steps of S4 include:

[0080] D1. Flexible array stress sensing: A flexible sensor array is integrated on the surface of the mold cavity. The flexible sensor array includes a quantum dot strain sensing layer, a magnetostrictive stress sensing layer, and a temperature self-compensation unit.

[0081] D2. Digital twin reconstruction of stress field: Construct a three-dimensional stress field in real time based on sensor data, calculate the stress concentration factor, and trigger compensation when the stress concentration factor is ≥1.8;

[0082] D3. Electromagnetic-mechanical coordinated compensation: Perform graded response, which is divided into first-level compensation, second-level compensation and third-level compensation. In the first-level compensation, a transverse alternating magnetic field is applied. In the second-level compensation, the piezoelectric micro-motion array on the mold surface is activated. In the third-level compensation, laser shock wave irradiation is used.

[0083] D4. Entropy stability assessment: After compensation, the information entropy of the stress field is calculated. When the information entropy of the stress field is ≥4.5, it is considered qualified.

[0084] In D1, the density of the flexible sensor array is ≥100 points / cm². 2 The quantum dot strain sensing layer adopts a CdSe / ZnS core-shell structure with a strain resolution ≤5με; the magnetostrictive stress sensing layer adopts an Fe-Ga alloy with a response frequency band of DC-50kHz; and the temperature self-compensation unit adopts a Pt100 thin film with an accuracy of ±0.1℃.

[0085] In D2, the stress concentration factor

[0086] In D3, the intensity of the transverse alternating magnetic field is 0.5-1.5T, and the frequency is 10-100Hz; the amplitude of the piezoelectric micro-motion array is 0.5-5μm, and the phase difference is 90°; the wavelength of the laser shock wave irradiation is 1064nm, and the power density is 2-5GW / cm². 2 The pulse width is 10-20 ns.

[0087] In D4, the stress field information entropy H = ∑(p i ·lnp i ).

[0088] like Figure 6 As shown, the operation steps of S5 include:

[0089] E1. Plasma activation heating: Radio frequency glow discharge is used to generate ionized inert gas plasma, which causes the surface of the workpiece to jump to the target temperature at a rate of 300-500℃ / s.

[0090] E2, Multiphase field coupling insulation: Simultaneously apply axial electrostatic field, radial alternating magnetic field, and longitudinal ultrasonic wave at the target temperature;

[0091] E3. Quantum dot catalytic slow cooling: Three-stage stepped cooling; For the first stage: when cooling from 800 to 600℃, an inert gas flow carrying CdSe / ZnS quantum dots is introduced, with a cooling rate of 80-120℃ / min; For the second stage: when cooling from 600 to 400℃, a pulsed laser array is applied, with a cooling rate of 25-40℃ / min; For the third stage: when cooling from 400 to 200℃, a piezoelectric micro-vibration platform is activated, with a cooling rate of 5-15℃ / min.

[0092] In E1, the frequency of the radio frequency glow discharge is 13.56MHz, and the target temperature is T. s =0.85T m ±10℃, T m The melting point of the material.

[0093] In E2, the voltage per unit length of the axial electrostatic field is 10-30 kV / cm; the intensity of the radial alternating magnetic field is 0.5-1.8 T, and the frequency is 1-10 Hz; the frequency of the longitudinal ultrasonic wave is 28 kHz, and the amplitude is 2-5 μm.

[0094] In E3, the concentration of the inert gas stream carrying CdSe / ZnS quantum dots was 10. 12 -10 13 Particles / m 3 The pulsed laser array has a wavelength of 532 nm and an energy density of 0.5-1.5 J / cm². 2 The amplitude of the piezoelectric micro-vibration platform is 0.1-0.5μm, and the frequency is 100-500Hz.

[0095] The working principle of a semiconductor device stamping process based on Embodiment 1 is as follows:

[0096] In S1, the control logic of the partitioned gradient cooling technology is as follows: when the temperature drops to the Ms point, the thickness is monitored. If the monitored thickness is ≤5mm, full-section liquid nitrogen cooling is activated. If the monitored thickness is >5mm, the partitioned spray algorithm is activated, and feedback from the 3D deformation sensor is used to dynamically adjust the nozzle angle ±10°.

[0097] In S2, differential stamping includes a preforming stage, a precision stamping stage, and a shaping stage. The control logic of the precision stamping stage is as follows: a fiber optic grating monitors the material flow rate. Let the flow rate difference be Δv. If Δv > 15%, the low-speed side pressure is increased by 10-20%. If Δv < -15%, piezoelectric compensation is activated by 0.5-3 μm. If -15% < Δv < 15%, the parameters are maintained. In the nanoscale closed-loop control of the shaping stage, Δh = K. p ·e(t)+K i ∫e(t)dt, where e(t) is the difference between the measured thickness and the target value, and the proportionality coefficient K p =0.8μm / %, integral coefficient K i =0.05μm / %·s. The decision-making process of the online quality monitoring system is as follows: after data acquisition, defect judgment is performed. If the thickness exceeds the tolerance, piezoelectric compensation is activated. If strain is concentrated, the edge clamping force distribution is adjusted. If the grains are abnormal, the temperature parameters are modified.

[0098] In S3, the vibration system architecture includes an ultrasonic generator, a phase-adjustable power supply, a piezoelectric ceramic stack, a composite amplitude transformer, a mold working surface, and workpiece material. The dynamic adjustment algorithm for the coordinated control of the vibration waveform is as follows: K p 0.05 μm·ms / N, K i It is 0.12 μm / N·s, F set For the set force value, F act This represents the actual force value. The electromechanical coupling implementation steps include pre-resonance matching, impulse-vibration synchronization control, and thermal deformation compensation.

[0099] In S4, for the array topology design, a 5×5 quantum dot array is used for the stamping center area, an 8-channel FBG chain is used for the flange edge, and a combination of magnetostriction and piezoelectricity is used for the R-corner region. The hierarchical triggering logic of the dynamic multi-level compensation mechanism is: if 1.8≤K t If K < 2.2, then magnetic field dislocation unlocking is performed; if 2.2 ≤ K t If K < 2.8, then piezoelectric lattice reconstruction is performed. t If the strength is ≥2.8, laser shock peening is performed. The closed-loop control equation is: K p =0.5T / unit K t K i =0.1T·s -1 / unit K t .

[0100] In the S5, the in-situ annealing system architecture includes a vacuum locking chamber, a plasma activation zone, a multi-physics annealing chamber, a stepped slow cooling module, a quality inspection station, and an intelligent sorting outlet. In the three-stage deoxygenation system, the mechanical pump pre-evacuates to 10... -2At a temperature of Pa, molecular sieve adsorption is performed. When the residual oxygen content is ≤100ppm, titanium sublimation trap is used. When the final oxygen content is ≤0.1ppm, the process chamber is used. The temperature control curve is as follows: T0 is the room temperature.

[0101] The above specific embodiments are merely several preferred embodiments of the present invention. Based on the technical solutions of the present invention and the relevant teachings of the above embodiments, those skilled in the art can make various alternative improvements and combinations to the above specific embodiments.

Claims

1. A stamping process for semiconductor equipment, characterized in that, include: S1: Gradient temperature pretreatment of metal billet; S2: Differential stamping is performed using a multi-stage progressive stamping die set; S3: Axial ultrasonic vibration is applied synchronously during the stamping process; S4: Real-time monitoring of residual stress distribution in the stamping area via embedded stress sensors; triggering a dynamic compensation mechanism when the stress concentration factor exceeds 1.

8. S5: After stamping, perform in-situ annealing in an inert gas environment.

2. The semiconductor device stamping process method according to claim 1, characterized in that, The operating steps for S1 include: A1. Electromagnetic-infrared composite heating stage: In a vacuum environment, alternating electromagnetic field and short-wave infrared synergistic heating are used to heat the billet to the target temperature at a rate of 80-120℃ / s. A2. Multi-field coupling insulation stage: Apply axial static magnetic field and radial ultrasonic waves at the target temperature; A3. Directional phase change cooling stage: A microchannel array spray system is used to implement cooling in a zoned and controllable manner; A4. In-situ tempering stage: When cooled to 20-50℃ below Ms point, pulsed laser scanning is started to achieve non-equilibrium tissue control.

3. The semiconductor device stamping process method according to claim 2, characterized in that: The partitioned controllable method described in A3 is divided into a core area and a surface area. Liquid nitrogen is used for cooling in the core area, while nanoparticles are used to enhance the cooling of the heat exchange fluid in the surface area.

4. The semiconductor device stamping process method according to claim 1, characterized in that, The operation steps of S2 include: B1. Fractal cooling and synergistic stamping: A temperature difference control system is set up between adjacent stamping stations to keep the upstream mold at 200-250℃ and the downstream mold at 80-120℃, forming a gradient temperature field. B2. Electromagnetic rheodynamic edge pressing control: An independent electromagnetic rheodynamic edge pressing ring is configured at each work station to generate an edge pressing force distribution with a gradient of 5-50MPa in real time. B3. Piezoelectric micro-strain compensation: Apply reverse micro-strain at the end of the stamping stroke by embedding a piezoelectric ceramic array into the mold cavity; B4. Cross-station material rheology monitoring: A distributed fiber optic grating sensor array is used to monitor the material flow status between stages in real time. When the flow velocity difference between adjacent stations exceeds 15%, a coordinated speed regulation mechanism is triggered.

5. The semiconductor device stamping process method according to claim 1, characterized in that, The operating steps for S3 include: C1. Frequency sweeping-standing wave composite vibration mode: linear frequency sweeping vibration is used in the initial stage of stamping, and it is switched to fixed frequency standing wave vibration when the stamping depth reaches 50%. C2. Pulse energy gradient control: Divide a single stamping process into three energy intervals; C3. Dynamic impedance matching: By monitoring the impact force signal in real time, when the impact force change rate dF / dt > 10kN / ms, the vibration amplitude is automatically increased by 20-30%. C4. Phase transition synergistic control: Local laser irradiation points are arranged at the vibration node positions to induce dislocation recombination.

6. The semiconductor device stamping process method according to claim 5, characterized in that: The three energy ranges described in C2 are divided into a contact range, a forming range, and a demolding range. In the contact range, the vibration amplitude is 3-5 μm and the duty cycle is 30-50%. In the forming range, the vibration amplitude is 8-12 μm and a continuous wave mode is used. In the demolding range, the vibration amplitude is 15-20 μm and a pulse train mode is used with a pulse interval of 0.5-2 ms.

7. The semiconductor device stamping process method according to claim 1, characterized in that, The operating steps for S4 include: D1. Flexible array stress sensing: Integrating a flexible sensor array on the surface of the mold cavity; D2. Digital twin reconstruction of stress field: Construct a three-dimensional stress field in real time based on sensor data, calculate the stress concentration factor, and trigger compensation when the stress concentration factor is ≥1.8; D3. Electromagnetic-mechanical coordinated compensation: Executes graded response; D4. Entropy stability assessment: After compensation, the information entropy of the stress field is calculated. When the information entropy of the stress field is ≥4.5, it is considered qualified.

8. The semiconductor device stamping process method according to claim 7, characterized in that: The flexible sensor array described in D1 includes a quantum dot strain sensing layer, a magnetostrictive stress sensing layer, and a temperature self-compensation unit; the graded response described in D3 is divided into first-level compensation, second-level compensation, and third-level compensation. In the first-level compensation, a transverse alternating magnetic field is applied; in the second-level compensation, the piezoelectric micro-motion array on the mold surface is activated; and in the third-level compensation, laser shock wave irradiation is used.

9. A semiconductor device stamping process method according to claim 1, characterized in that, The operating steps for S5 include: E1. Plasma activation heating: Radio frequency glow discharge is used to generate ionized inert gas plasma, which causes the surface of the workpiece to jump to the target temperature at a rate of 300-500℃ / s. E2, Multiphase field coupling insulation: Simultaneously apply axial electrostatic field, radial alternating magnetic field, and longitudinal ultrasonic wave at the target temperature; E3, Quantum Dot Catalytic Slow Cooling: Three-stage stepped cooling.

10. A semiconductor device stamping process method according to claim 9, characterized in that: In E3, for the first stage: when the temperature drops from 800 to 600°C, an inert gas flow carrying CdSe / ZnS quantum dots is introduced, with a cooling rate of 80-120°C / min; for the second stage: when the temperature drops from 600 to 400°C, a pulsed laser array is applied, with a cooling rate of 25-40°C / min; for the third stage: when the temperature drops from 400 to 200°C, a piezoelectric micro-vibration platform is activated, with a cooling rate of 5-15°C / min.

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