CVD (Chemical Vapor Deposition) system and method for low-pressure pulse type gas supply deposition of silicon carbide coating

By using a CVD system that alternates between low-pressure pulsed gas supply and inert gas purging, the problems of boundary layer enrichment and coating inhomogeneity in silicon carbide coatings were solved, achieving efficient silicon carbide coating deposition and improving precursor utilization and coating quality.

CN121472818APending Publication Date: 2026-02-06ADVANCED FOR MATERIALS & EQUIP CO LTD
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Patent Information

Application Number
CN202511748057.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-26
Publication Date
2026-02-06

AI Technical Summary

Technical Problem

Existing technologies for silicon carbide coatings suffer from problems such as boundary layer enrichment, numerous particle defects, low precursor utilization, and poor coating uniformity. In particular, the poor coating quality is caused by reactant retention and uneven airflow distribution at high temperatures.

Method used

The CVD system employs alternating low-pressure pulse gas supply and inert gas purging. A low-pressure environment is maintained through a vacuum buffer chamber. Combined with an atmosphere switching module and control unit, the system achieves periodic pulse gas supply and purging, ensuring dynamic refresh and stable control of the reaction atmosphere.

Benefits of technology

It significantly improves the utilization rate of precursor gases, reduces particle defects, enhances the uniformity and density of the coating, reduces energy consumption and raw material consumption, and improves deposition rate and coating quality stability.

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Abstract

The invention discloses a CVD (Chemical Vapor Deposition) system and method for depositing a silicon carbide coating through low-pressure pulse type gas supply. The system comprises a furnace body, a gas distribution disc, a gas supply loop, an atmosphere switching module, a vacuum buffer cavity and a control unit, the vacuum buffer cavity is used for controlling the furnace cavity pressure of the furnace body to be maintained in a low-pressure environment of 50-200 Pa, and the control system is used for controlling precursor gas supply and inert gas purging to be periodically switched. And thus, periodic stable refreshing of the boundary layer reaction atmosphere is realized. According to the method, through alternate operation of pulse gas supply and purging, dynamic refreshing of the reaction atmosphere is achieved, a boundary layer is effectively thinned, gas retention is eliminated, the effective flux of the reaction gas reaching the surface of a matrix is improved, and then the compactness, uniformity and surface quality of the silicon carbide coating are remarkably improved. Therefore, the problems of boundary layer enrichment, raw material waste, uneven coating and the like in the traditional continuous gas inlet CVD process are solved.
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