Baffle structure of semiconductor process equipment and semiconductor process equipment

Abstract

The invention provides a baffle structure of semiconductor process equipment and the semiconductor process equipment, and relates to the technical field of semiconductors. The baffle structure comprises a baffle, the baffle is provided with a first channel and a second channel, the first channel is used for conveying cleaning gas, and the second channel is used for conveying process gas; a turbulent flow assembly is arranged in the first channel, and a gap for circulation of the cleaning gas exists between the turbulent flow assembly and the inner wall of the first channel. By increasing the turbulent flow assemblies, the gas flow direction is disturbed, the effective flow area of the first channel for gas flow is reduced, and it is beneficial to restrain part of gas from flowing back through an outlet of the first channel in the technological process.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a baffle structure of a semiconductor process equipment and the semiconductor process equipment. BACKGROUND

[0002] In semiconductor manufacturing, thin film deposition process (such as chemical vapor deposition CVD, plasma enhanced CVD, etc.) is a key step to form a thin film layer, which directly affects the electrical performance and reliability of the device. Process gas needs to be uniformly dispersed to the reaction chamber through the shower plate to ensure the uniformity of the film thickness, composition and surface morphology. However, in the traditional shower plate and baffle design, the flow paths of the process gas and the cleaning gas often cause uneven distribution due to structural defects, leading to process defects.

[0003] The existing baffle usually has process holes and cleaning channels (Clean Channel) for transmitting process gas and cleaning gas respectively. However, the aperture of the cleaning channel is much larger than the process holes on the baffle (for example, the aperture of the cleaning channel is 2-15 times that of the process holes), and when the process gas is input at high pressure, part of the gas flows back into the cleaning pipeline shared by the two chambers through the outlet of the cleaning channel, causing cross contamination of the process gas and the cleaning gas, and leading to differences in process performance between the two chambers (such as uneven film thickness at the edge and center of the wafer). SUMMARY

[0004] Therefore, the present application provides a baffle structure of a semiconductor process equipment and the semiconductor process equipment, which is beneficial to inhibit the backflow of part of the gas through the outlet of the first channel of the baffle during the process.

[0005] In a first aspect, the present application provides a baffle structure of a semiconductor process equipment, comprising a baffle, the baffle being provided with a first channel and a second channel, the first channel being used for transmitting cleaning gas, and the second channel being used for transmitting process gas. A turbulence component is arranged in the first channel, and a gap for the flow of the cleaning gas exists between the turbulence component and the inner wall of the first channel.

[0006] In one embodiment, the turbulence component comprises a columnar body, and a helical groove is arranged on the surface of the columnar body, the helical groove extending from the top to the lower part of the columnar body.

[0007] In one embodiment, the turbulence component comprises an upper end portion and a body portion connected to the upper end portion, the body portion extending downward and forming a plurality of air passage channels.

[0008] In one embodiment, the air passage channels are straight channels distributed axially along the body portion, so that the cleaning gas flows out axially along the first channel.

[0009] In one embodiment, the main body portion comprises a plurality of first partition structures extending downwardly, and the ventilation channels are formed between adjacent first partition structures.

[0010] In one embodiment, the gas outlet end of the ventilation channel is inclined non-axially along the main body portion, so as to change the gas flow direction of the cleaning gas flowing out of the first channel.

[0011] In one embodiment, the main body portion comprises a first main body portion and a second main body portion, the second main body portion is tapered, and the main body portion further comprises a plurality of second partition structures extending downwardly, the second partition structures are integrally connected with the first main body portion and the second main body portion, the large-diameter end of the tapered second main body portion is directed towards the gas outlet side of the first channel, and the ventilation channels are formed between adjacent second partition structures.

[0012] In one embodiment, the turbulence assembly is embedded in the first channel, and the upper end of the turbulence assembly is flush with or higher than the upper surface of the baffle.

[0013] In one embodiment, the baffle structure further comprises a limiting structure arranged on the upper surface of the baffle and arranged circumferentially around the first channel, so as to cooperate with the upper end of the turbulence assembly to limit the rotation of the turbulence assembly.

[0014] In one embodiment, the lower end surface of the turbulence assembly is flush with or lower than the lower surface of the baffle.

[0015] In one embodiment, the spiral groove is used to change the gas flow direction of the cleaning gas, and the angle between the gas flow direction of the cleaning gas at the outlet end of the first channel and the vertical direction is 0°-72°.

[0016] In a second aspect, the present application provides a semiconductor process equipment comprising the baffle structure of the first aspect; The spray structure comprises a gas distribution assembly and a spray assembly, the spray assembly comprises a first spray plate and a second spray plate, the baffle structure is arranged between the first spray plate and the second spray plate, and the baffle structure forms an upper process cavity with the first spray plate. The gas distribution assembly is located above the spray assembly and has a cleaning gas channel and a process gas channel, the process gas channel is communicated through the second channel on the baffle structure and the plurality of hole flow channels on the second spray plate, and the cleaning gas channel is communicated through the second process cavity and the second channel on the baffle structure and the plurality of hole flow channels on the second spray plate.

[0017] The baffle structure provided in the application increases the spoiler assembly to interfere with the gas flow and reduce the effective flow area of the first channel for gas flow, which is beneficial to inhibit the backflow of part of the gas through the first channel outlet during the process. BRIEF DESCRIPTION OF DRAWINGS

[0018] The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the principle of the application. In the drawings: Figure 1 is a structural schematic diagram of a semiconductor process equipment; Figure 2 is a whole schematic diagram of a baffle structure of a semiconductor process equipment provided by the embodiment of the application; Figure 3 is a top view of a baffle structure of a semiconductor process equipment provided by the embodiment of the application; Figure 4 is a partial enlarged view of F in Figure 3 Figure 5 is a schematic diagram of a first spoiler assembly provided by the embodiment of the application; Figure 6 is a schematic diagram of a second spoiler assembly provided by the embodiment of the application; Figure 7 is a schematic diagram of a third spoiler assembly provided by the embodiment of the application; Figure 8 is a schematic diagram of the third spoiler assembly changing the gas distribution range provided by the embodiment of the application.

[0019] The reference signs in the drawings are as follows: 20, baffle structure; 200, baffle; 201, first channel; 202, second channel; 203, spoiler assembly; 204, limiting structure; 2010, upper end; 2011, first separation structure; 2012, first main body part; 2013, second main body part; 2014, second separation structure; 2015, helical groove. DETAILED DESCRIPTION

[0020] ​In order to illustrate the technical solutions of the embodiments of the present application more clearly, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description only show some examples or embodiments of the present application, and those skilled in the art can further apply the present application to other similar situations without any creative effort, based on the drawings. The same reference signs in the drawings represent the same structure or operation, unless otherwise clear from the context or otherwise indicated.

[0021] As shown in the present application and claims, unless the context clearly indicates otherwise, the words "one", "an", "a", and / or "the" do not mean "only one", but can include a plurality or "one or more" unless the context clearly indicates otherwise. Generally, the terms "comprising" and "including" only indicate the inclusion of the steps and elements explicitly identified in the context, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0022] Unless specifically stated otherwise, the relative arrangement of components and steps, numerical expressions, and numerical values set forth in the embodiments described herein are not intended to limit the scope of the present application. It should be understood that the dimensions of the various parts shown in the drawings are not necessarily to scale for the sake of convenience in description. The techniques, methods, and devices known to those skilled in the relevant art can not be discussed in detail, but should be considered as part of the authorized description, if appropriate. In all examples shown and discussed herein, any specific value should be interpreted as merely exemplary, and not as a limitation. Therefore, other examples of the exemplary embodiments can have different values. It should be noted that similar reference signs and letters represent similar items in the following drawings, and therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0023] In the description of the present application, it should be understood that the orientation words such as "front, back, up, down, left, right", "horizontal, vertical, perpendicular, horizontal", and "top, bottom" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise stated, these orientation words do not indicate or imply that the devices or elements referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be understood as limiting the scope of protection of the present application. The orientation words "inner, outer" refer to the inner and outer relative to the contour of the components themselves.

[0024] For purposes of the description hereinafter, the terms "upper", "lower", "right", "left", "rear", "front", "vertical", "horizontal", and derivatives thereof (e.g., "vertical ly", "horizontal ly", etc.) can refer to the relative positions of an apparatus or feature as shown in the drawings, and shall not be construed as limiting the present application to any particular spatial orientation. Furthermore, the terms "first", "second", third", etc. can be used herein to describe various components, but such components should not be limited by these terms. Such terms can be used interchangeably with appropriate spatial terms and / or other descriptive terms to describe the same components.

[0025] In addition, it should be noted that terminology from the field of the application is used in the present application in order to more particularly describe certain aspects of the application. However, such terminology is used in a non-limiting fashion. Furthermore, the use of "first", "second", etc. to describe a component having a particular property is only intended to distinguish between components having the particular property, and is not intended to limit the scope of the present application. Unless specifically set forth herein, none of the aspects of the present application are directed to the particular features described herein.

[0026] It will be understood that when a component, e.g., a layer, film, region, or substrate, is referred to as being "on" or "connected to" another component, it can be directly on or connected to the other component or intervening components can be present. In contrast, when a component, e.g., a layer, film, region, or substrate, is referred to as being "directly on" or "directly connected to" another component, there are no intervening components present.

[0027] As described above, in the spray plate structure of the prior known semiconductor process equipment, the baffle plate design is usually provided with process holes and cleaning channels for transmitting process gas and cleaning gas respectively. As shown in Figure 1As shown, the process gas enters the reaction chamber from the process channel, first passing through baffles and spray plates. The gas is then dispersed through porous channels, resulting in a more uniform distribution within the chamber and preventing most of the gas from directly entering the reaction chamber from the center. The cleaning channel is located in the middle radius of the spray plate, with an aperture much larger than the process holes on the baffle (e.g., the cleaning channel aperture is 2-15 times that of the process holes). During the process, some gas may flow back through the cleaning channel outlet into the cleaning channel connecting the two chambers. This backflow of process gas can easily lead to differences in the process performance between the two chambers. Furthermore, in subsequent process flows, when the process gas is shut off but radio frequency remains in the reaction chamber, the vacuum pump draws the process gas from the cleaning channel back into the reaction chamber, causing deposition and resulting in excessive film thickness in localized areas.

[0028] To alleviate at least one of the above problems, one embodiment of this application proposes a baffle structure for semiconductor process equipment.

[0029] See Figure 2 One embodiment of this application proposes a baffle structure 20 for a semiconductor process apparatus, including a baffle 200. The baffle 200 has a first channel 201 and a second channel 202. The first channel 201 is used to transport cleaning gas, and the second channel 202 is used to transport process gas. The aperture of the first channel 201 is much larger than the aperture of the second channel 202, for example, the aperture of the first channel 201 is 2-15 times the aperture of the second channel 202. The second channel 202 is at least one fluid channel disposed in the central region of the baffle 200, and its number can be specifically set according to requirements, for example... Figure 2 The six first channels 201 in the embodiment may be of other numbers in other embodiments, and this application does not specifically limit them.

[0030] Further, see also Figure 3 and Figure 4 A flow-deflecting component 203 is provided within the first channel 201, and a gap exists between the flow-deflecting component 203 and the inner wall of the first channel 201 for the flow of clean gas. By adding the flow-deflecting component 203, the gas flow direction is disrupted, and the effective flow area of ​​the first channel 201 for gas flow is reduced, which helps to suppress the backflow of some gas through the outlet of the first channel 201 during the process. Furthermore, in some embodiments, the flow-deflecting component 203 is embedded in the first channel 201 as a separate, detachable part, requiring minimal modification to the original baffle structure, and offering the following advantages: I. High structural compatibility, no need to redesign the original structure: Minimize the scope of modification: Only an independent turbulence component needs to be added inside the existing first channel 201 of the baffle. There is no need to adjust the main structure of the baffle (such as thickness, hole distribution or material), and the original assembly relationship between the spray plate and the baffle is retained.

[0031] Advantages of inheritance: The new and old versions of the baffle can share the same mold and assembly process, requiring only the insertion of the baffle component in the first channel 201, reducing the cost of production line modification. For example, the new baffle component can be fixed to the original through hole of the first channel by limiting structures such as grooves, bosses or buckles, without the need to re-mold.

[0032] II. High flexibility in maintenance and upgrades

[0033] Modular replacement: If the aerodynamic components are damaged, they can be directly disassembled and replaced without replacing the entire baffle, thus reducing maintenance costs.

[0034] Adjustable process parameters: By replacing different aerodynamic components (such as adjusting...) Figure 5 and Figure 6 The distribution density of the through-hole structure in the turbulence-disrupting component, or adjustment Figure 7 The pitch in the turbulence assembly adjusts the effective flow area between the turbulence assembly and the inner wall of the first channel for clean gas to flow, which can be adapted to different process requirements (such as the different gas flow requirements of PECVD and ALD).

[0035] III. Cost-benefit balance

[0036] Short development cycle: No need to redesign the baffle structure, only to verify the compatibility of the newly added turbulence components, shortening the product iteration cycle.

[0037] Production costs are controllable: Utilize existing processing capabilities to avoid material waste caused by structural changes (such as the need for more metal material to thicken the baffle as a whole).

[0038] IV. Technology Verification and Risk Mitigation

[0039] Incremental improvement: Reduce technical risks by optimizing local areas (adding a spoiler component within the first channel 201) rather than making a systemic overhaul. For example, the effect of adding the spoiler component can be tested on a small-batch production line first, and then gradually rolled out.

[0040] Simplified compatibility testing: The functional difference between the new and old versions of the baffle is only reflected in the turbulence component in the first channel 201. Other interfaces (such as gas inlet and fixed structure) remain the same, which facilitates verification and user acceptance.

[0041] In some embodiments, see continue to see Figure 3 and Figure 4 The aerodynamic component 203 is embedded within the first channel 201, and the upper end of the aerodynamic component 203 is flush with or higher than the upper surface of the baffle 200. For example... Figure 4 As shown, the baffle structure 20 also includes a limiting structure 204, which is disposed on the upper surface of the baffle 200 and circumferentially arranged around the first channel 201, for use with the upper end of the turbulence component (e.g., Figure 4The upper end of the cross-shaped flange structure is used to restrict the rotation of the aerodynamic components.

[0042] In some embodiments, the turbulence assembly includes an upper end portion and a body portion connected to the upper end portion, the body portion extending downward and forming a plurality of ventilation channels.

[0043] As a first feasible approach, the ventilation channel is a straight channel distributed axially along the main body, allowing clean gas to flow out axially along the first channel. The main body includes multiple downwardly extending first partition structures, with ventilation channels formed between adjacent first partition structures. For example... Figure 5 The shown turbulence assembly 203 includes an upper end 2010 and a main body connected to the upper end 2010. The main body includes four downwardly extending first partition structures 2011, and a ventilation channel is formed between two adjacent first partition structures 2011.

[0044] As a second feasible approach, the outlet end of the ventilation channel is inclined along the non-axial direction of the main body to change the gas flow direction of the clean gas flowing out of the first channel, so that the outflowing gas is distributed along a preset angle, such as 0°-72°. In this case, the main body includes a first main body and a second main body, the second main body being conical. The main body also includes multiple downwardly extending second partition structures, which are integrally connected to the first and second main bodies. The large-diameter end of the cone faces the outlet side of the first channel, and a ventilation channel is formed between adjacent second partition structures. For example... Figure 6 The shown turbulence assembly 203 includes an upper end 2010 and a main body integrally connected to the upper end 2010. The main body includes a first main body 2012, a second main body 2013, and four downwardly extending second partition structures 2014. A ventilation channel is formed between adjacent second partition structures 2014. The second main body 2013 is conical, and the diameter of the cone increases from top to bottom, which can expand the gas distribution range of the outflowing clean gas.

[0045] As a third feasible approach, the aerodynamic component is spiral-shaped, comprising an upper end and a columnar body 2014 connected to the upper end and extending downwards. The surface of the columnar body 2014 is provided with spiral grooves, which extend from the top to the bottom of the columnar body. For example... Figure 7 The illustrated flow-disrupting component 203 includes an upper end 2010 and a columnar body 2014 connected to the upper end 2010 and extending downwards. The surface of the columnar body 2014 is provided with a spiral groove 2015 extending from the top to the bottom of the columnar body. By changing the pitch of the spiral groove, the gas distribution range is altered. Compared to the previous two feasible methods, the spiral groove design, in addition to reducing the effective flow area of ​​the first channel 201 for gas flow and increasing the flow resistance of backflowing gas to suppress backflow, can also change the gas flow direction at the outlet end of the first channel, for example...Figure 8 As shown, the angle α between the gas flow direction at the outlet of the first channel and the vertical direction (which can also be understood as the axis of the first channel) is 0°-72°, which expands the outlet gas distribution range and has the following advantages: 1. Improve the uniformity of spray plate cleaning By expanding the gas distribution range, the cleaning intensity of each area (from center to edge) of the spray plate under the baffle tends to be consistent, reducing material wear or coating peeling caused by local high-speed airflow impact on the spray plate and extending its service life.

[0046] II. Reduce the probability of reflux

[0047] When the spiral-shaped turbulence component causes the backflowing gas to flow upward, it needs to spiral upward under the action of the spiral groove, which requires overcoming greater flow resistance and reducing the probability of backflow.

[0048] In some embodiments, the lower end face of the spoiler component is flush with or slightly lower than the lower surface of the baffle (e.g., 0.05 mm lower than the lower surface of the baffle).

[0049] Another embodiment of this application proposes a semiconductor process equipment that can be applied to multiple fields such as vacuum bonding in the panel industry, semiconductor chip packaging, microelectronic integrated circuits, precision optical component manufacturing, and solar photovoltaic production. The semiconductor process equipment includes the aforementioned baffle structure and spray structure. The spray structure includes a gas distribution component and a spray component. The spray component includes a first spray plate and a second spray plate. The baffle structure is disposed between the first and second spray plates, forming a process cavity on the baffle with the first spray plate. For example... Figure 1 As shown, the first spray plate can be Figure 1 The upper spray plate in the middle, the second spray plate can be Figure 1 The spray plate in the middle.

[0050] The gas distribution unit is located above the spray unit and has a clean gas passage (such as...). Figure 1 Clean gas passages and process gas passages (such as...) Figure 1 The process gas channel passes through a second channel on the baffle structure (such as...). Figure 1 The porous flow channel in the first spray plate and the porous flow channel on the second spray plate are connected. The cleaning gas channel is connected to the porous flow channel on the second spray plate through the first channel on the baffle structure. By adding a flow-disrupting component in the baffle of the semiconductor process equipment, the gas flow direction is interfered with, and the effective flow area of ​​the first channel for gas flow is reduced, which helps to suppress the backflow of some gas through the outlet of the first channel during the process.

[0051] In some embodiments, the semiconductor process equipment further includes a reaction chamber, a second spray plate is located inside the reaction chamber, and the reaction chamber is also connected to a vacuum suction channel. By introducing the above-mentioned turbulence-inducing components into the baffle structure, process gas backflow is suppressed, which helps to alleviate the following problem: In subsequent process flows, when the process gas is shut off but radio frequency remains in the reaction chamber, vacuum pump suction causes the process gas in the cleaning channel to flow back into the reaction chamber, resulting in deposition and causing excessive film thickness in local areas.

[0052] The basic concepts have been described above. This description is provided to enable any person skilled in the art to practice the various aspects described herein. However, it should be understood that the scope of protection of this application should be determined by the appended claims and should not be limited to the specific structures and components of the embodiments explained above.

[0053] Obviously, the above disclosure is merely an example and does not constitute a limitation of this application for those skilled in the art. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0054] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0055] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0056] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0057] Although this application has been described with reference to specific embodiments, those skilled in the art should recognize that the above embodiments are only used to illustrate this application, and various equivalent changes or substitutions can be made without departing from the spirit of this application. Therefore, any changes or modifications to the above embodiments within the essential spirit of this application will fall within the scope of the claims of this application.

Claims

1. A baffle structure for semiconductor process equipment, characterized in that, The system includes a baffle, which has a first channel and a second channel, wherein the first channel is used to transmit clean gas and the second channel is used to transmit process gas. A flow-dispersing component is provided in the first channel, and there is a gap between the flow-dispersing component and the inner wall of the first channel for the clean gas to flow through.

2. The baffle structure as described in claim 1, characterized in that, The turbulence component includes a columnar body with a spiral groove on its surface, the spiral groove extending from the top to the bottom of the columnar body.

3. The baffle structure as described in claim 1, characterized in that, The turbulence component includes an upper end and a main body connected to the upper end, the main body extending downward and forming multiple ventilation channels.

4. The baffle structure as described in claim 3, characterized in that, The ventilation channel is a straight channel distributed along the axial direction of the main body, allowing the clean gas to flow out axially along the first channel.

5. The baffle structure as described in claim 4, characterized in that, The main body includes a plurality of downwardly extending first partition structures, and the ventilation channel is formed between adjacent first partition structures.

6. The baffle structure as described in claim 3, characterized in that, The outlet end of the ventilation channel is inclined along the non-axial direction of the main body to change the flow direction of the clean gas flowing out of the first channel.

7. The baffle structure as described in claim 6, characterized in that, The main body includes a first main body and a second main body. The second main body is conical. The main body also includes a plurality of downwardly extending second partition structures. The second partition structures are connected to the first main body and the second main body. The large-diameter end of the cone faces the air outlet side of the first channel. The ventilation channel is formed between adjacent second partition structures.

8. The baffle structure as described in claim 1, characterized in that, The flow-dispersing component is embedded in the first channel, and the upper end of the flow-dispersing component is flush with or higher than the upper surface of the baffle; and / or The lower end face of the turbulence component is flush with or lower than the lower surface of the baffle.

9. The baffle structure as described in any one of claims 1-8, characterized in that, The baffle structure also includes a limiting structure disposed on the upper surface of the baffle and arranged circumferentially around the first channel, used to cooperate with the upper end of the turbulence component to limit the rotation of the turbulence component.

10. The baffle structure as described in claim 2, characterized in that, The spiral groove is used to change the gas flow direction of the cleaning gas, and the angle between the gas flow direction of the cleaning gas at the outlet end of the first channel and the vertical direction is 0°-72°.

11. A semiconductor process apparatus, characterized in that, include: The baffle structure as described in any one of claims 1-10; A spray structure, comprising a gas distribution component and a spray component, wherein the spray component comprises a first spray plate and a second spray plate, and a baffle structure is disposed between the first spray plate and the second spray plate, wherein the baffle structure and the first spray plate form a process cavity on the baffle. The gas distribution component is located above the spray component and has a clean gas channel and a process gas channel. The process gas channel is connected to the porous flow channel on the second spray plate through the second channel on the baffle structure, and the clean gas channel is connected to the porous flow channel on the second spray plate through the first channel on the baffle structure.

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