Vacuum adsorption heating disc and semiconductor equipment

Abstract

The invention relates to the technical field of semiconductor equipment, in particular to a vacuum adsorption heating disc and semiconductor equipment. In order to achieve the purpose, the vacuum adsorption heating disc provided by the invention comprises a disc body and a disc handle, wherein a plurality of circles of concentric adsorption grooves and a plurality of radial adsorption grooves are formed in the disc body; a plurality of vertical air exhaust holes are formed in the concentric adsorption grooves or the radial adsorption grooves; the lower portion of each vertical air exhaust hole is connected with a horizontal air exhaust channel, and the horizontal air exhaust channels are arranged in the tray body. A main air suction channel is arranged in the plate handle, and all the horizontal air suction channels intersect at the main air suction channel in the radial direction. According to the invention, through the vertical air suction holes and the horizontal air suction channels arranged along the radial adsorption grooves, the warping of the edge of the wafer caused by too strong central suction force is effectively avoided, the rapid and smooth adsorption of the wafer can be realized in an extremely short time, and a stable and reliable foundation is provided for subsequent heating and process treatment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically, to a vacuum adsorption heating plate and semiconductor equipment. Background Technology

[0002] In semiconductor equipment such as chemical vapor deposition (CVD), the vacuum adsorption heating plate is a core process component. It uses the principle of vacuum adsorption to achieve the adsorption and fixation of wafers and precise temperature control. The quality of the adsorption force on the wafer directly determines the uniformity of thin film deposition and the particle behavior during the process. Therefore, designing a reasonable vacuum adsorption gas flow channel to achieve rapid, stable, and uniform adsorption has become a key aspect of this hardware design.

[0003] However, traditional vacuum adsorption heating pads typically employ a center-extraction scheme, where a single extraction port is located near the center of the pad surface, and negative pressure is transferred to the entire wafer area using a grid of concentric and radial adsorption trenches. This scheme has the following drawbacks: a long flow path exists between the outermost adsorption trenches and the central extraction port, resulting in significant flow resistance, which severely limits the wafer's adsorption speed and uniformity. Especially for wafers with warpage, the edge areas cannot obtain sufficient adsorption force due to excessive flow resistance, easily causing the wafer edges to warp and detach from the pad surface. This further creates differences in thermal contact between the wafer edges and the center, leading to significant temperature differences, ultimately resulting in deterioration of film uniformity and even film detachment, severely reducing wafer yield.

[0004] Therefore, there is an urgent need for a novel vacuum adsorption heating plate design with a new airflow channel to provide rapid, uniform, and powerful adsorption force across the entire wafer adsorption surface, especially in the edge areas, to ensure the requirements of advanced semiconductor manufacturing processes. Summary of the Invention

[0005] The purpose of this invention is to provide a vacuum adsorption heating plate and semiconductor equipment, which solves the technical problems of high flow resistance, uneven adsorption force, and insufficient adsorption force for warped wafer edges in existing center evacuation schemes.

[0006] To achieve the above objectives, the present invention provides a vacuum adsorption heating plate, comprising a plate body and a plate handle:

[0007] The disk body is provided with multiple concentric adsorption grooves and multiple radial adsorption grooves, and the multiple concentric adsorption grooves are connected through the radial adsorption grooves.

[0008] The concentric or radial adsorption grooves are provided with multiple vertical air extraction holes.

[0009] Each vertical air extraction hole is connected to a horizontal air extraction channel below it, and the horizontal air extraction channel is located inside the disc body;

[0010] The handle is provided with a main air extraction channel, and all the horizontal air extraction channels converge radially into the main air extraction channel.

[0011] In some embodiments, the vertical suction hole is located at the intersection of the concentric adsorption grooves and the radial adsorption grooves, except for the innermost and outermost concentric adsorption grooves; and / or

[0012] On the concentric adsorption grooves other than the innermost and outermost rings, it is located at the midpoint of the intersection of two adjacent radial adsorption grooves.

[0013] In some embodiments, the vertical suction hole is disposed on the radial adsorption groove, located at the midpoint between the two intersections formed by the same radial adsorption groove and two adjacent concentric adsorption grooves.

[0014] In some embodiments, the conductance of each of the horizontal suction channels is not less than the sum of the conductances of all vertical suction holes on the corresponding radial adsorption groove or concentric adsorption groove.

[0015] In some embodiments, the conductance of the main extraction duct is not less than the sum of the conductances of all horizontal extraction ducts.

[0016] In some embodiments, the cross-sectional shape of the horizontal air extraction channel is one of a rectangle, a square, or a circle.

[0017] In some embodiments, the number of concentric adsorption grooves is at least 3 rings, and the number of radial adsorption grooves is at least 6.

[0018] In some embodiments, the multiple concentric adsorption grooves are all arranged concentrically with the center of the disk as the center;

[0019] The plurality of radial adsorption grooves are all opened along the diameter direction of the disk body;

[0020] The multiple concentric adsorption grooves are interconnected through radial adsorption grooves.

[0021] In some embodiments, the multi-ring concentric adsorption grooves are uniformly distributed with the center of the disk as the center, and the radius difference between two adjacent concentric adsorption grooves is equal.

[0022] The plurality of radial adsorption grooves are evenly distributed around the center of the disk, and the central angles between two adjacent radial adsorption grooves are equal.

[0023] In some embodiments, the multi-ring concentric adsorption grooves and / or the plurality of radial adsorption grooves are non-uniformly distributed on the adsorption surface of the disk.

[0024] To achieve the above objectives, the present invention provides a semiconductor device including the vacuum adsorption heating plate as described above.

[0025] The present invention provides a vacuum adsorption heating plate and semiconductor device, which enables the wafer to be adsorbed synchronously and evenly in the area between the center and the edge by means of vertical air extraction holes and horizontal air extraction channel structure arranged along the radial adsorption grooves. This effectively avoids wafer edge warping caused by excessive suction at the center and can remove gas that seeps in from the wafer edge in time. It achieves rapid and flat adsorption of the wafer in a very short time, providing a stable and reliable foundation for subsequent heating and processing. Attached Figure Description

[0026] The above and other features, properties and advantages of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always denote the same features, wherein:

[0027] Figure 1 A structural diagram of the adsorption grooves of a vacuum adsorption heating plate according to an embodiment of the present invention is disclosed;

[0028] Figure 2 A partially enlarged view of a vacuum adsorption heating plate according to an embodiment of the present invention is shown;

[0029] Figure 3 A simplified cross-sectional view of a vacuum adsorption heating plate according to an embodiment of the present invention is disclosed;

[0030] Figure 4 A simplified cross-sectional diagram of a typical vacuum adsorption heating plate in the prior art is shown.

[0031] The meanings of the labels in the figures are as follows:

[0032] 10 discs;

[0033] 11 concentric adsorption trenches;

[0034] 12 radial adsorption trenches;

[0035] 13 vertical air extraction holes;

[0036] 14 horizontal air extraction channels;

[0037] 20 handles;

[0038] 21. Main exhaust duct;

[0039] 31 points of pressure to be determined

[0040] 32 center air extraction ports. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention.

[0042] Figure 1 A diagram showing the adsorption groove structure of a vacuum adsorption heating plate according to an embodiment of the present invention is disclosed. Figure 3 A simplified cross-sectional view of a vacuum adsorption heating plate according to an embodiment of the present invention is shown, as follows: Figure 1 and Figure 3 As shown, the vacuum adsorption heating plate proposed in this invention mainly includes a plate body 10 and a plate handle 20:

[0043] The upper surface of the disk 10 is an adsorption surface for supporting the wafer, and multiple concentric adsorption grooves 11 and multiple radial adsorption grooves 12 are processed on the adsorption surface.

[0044] Among them, the multiple concentric adsorption grooves 11 are arranged concentrically with the center of the disk body 10 as the center, and multiple radial adsorption grooves 12 are opened along the diameter direction of the disk body 10. The concentric adsorption grooves 11 are connected through the radial adsorption grooves 12, and finally the concentric adsorption grooves 11 are interconnected.

[0045] One of the core improvements of the vacuum adsorption heating plate proposed in this invention lies in the layout of the vertical air extraction holes and the horizontal air extraction channels.

[0046] In this embodiment, multiple vertical suction holes 13 are provided on the concentric adsorption groove 11 and the radial adsorption groove 12.

[0047] Each vertical air extraction hole 13 is connected to a horizontal air extraction channel 14 below it, and the horizontal air extraction channel 14 is located inside the disc body 10.

[0048] The handle 20 is provided with a main air extraction channel 21, and all horizontal air extraction channels 14 converge radially into the main air extraction channel 21.

[0049] like Figure 3 As shown, one end of the main suction channel 21 extends into the interior of the disk body 10 and communicates with the horizontal suction channel 14, while the other end extends out of the disk handle 20 for connection with an external suction device (such as a vacuum pump). This ultimately forms a complete suction channel consisting of concentric adsorption grooves 11, radial adsorption grooves 12, vertical suction holes 13, horizontal suction channels 14, and the main suction channel 21 connected to the external suction device in sequence, providing a basic structure for vacuum adsorption.

[0050] In this embodiment, multiple vertical suction holes 13 are machined on the concentric adsorption grooves 11 and radial adsorption grooves 12. The distribution of these vertical suction holes 13 is optimized: they are not located on the innermost and outermost concentric adsorption grooves 11.

[0051] Figure 2 for Figure 1 The enlarged view of the dashed box area in the vacuum adsorption heating plate shown is as follows: Figure 1 black solid dots and Figure 2 As shown by the black hollow dots, these vertical air extraction holes 13 can be selectively located in the following positions:

[0052] At the intersections of the concentric adsorption trenches 11 (excluding the innermost and outermost rings) with the radial adsorption trenches 12; and / or

[0053] On the concentric adsorption grooves 11 other than the innermost and outermost rings, located at the midpoint of the intersection of two adjacent radial adsorption grooves 12; and / or

[0054] On the radial adsorption groove 12, it is located at the midpoint between the two intersections formed by the same radial adsorption groove 12 and the two adjacent concentric adsorption grooves 11.

[0055] It should be noted that, Figure 1 The solid black dots in the image are for illustrative purposes only and do not represent the actual content. Figure 1 Only these vertical air extraction holes are arranged in the middle.

[0056] The above-mentioned vertical air extraction hole layout design effectively avoids the problem of excessive suction at the center of the wafer, which would cause the edge to lift, due to the placement of holes in the innermost ring. It also avoids the problem of more obvious air leakage at the back edge of the wafer due to the placement of holes in the outermost ring.

[0057] like Figure 3 As shown, vertical suction holes 13 are machined inside each radial adsorption groove 12 or concentric adsorption groove 11. The upper part of each vertical suction hole 13 is connected to the radial adsorption groove 12 or concentric adsorption groove 11 on the disk surface, and the lower part is connected to the horizontal suction channel 14 machined inside the disk body 10.

[0058] The cross-sectional shape of the horizontal exhaust channel 14 can be designed as a rectangle, square or circle according to process requirements. Its specific shape is not limited, but its design must meet a key flow conduction relationship: the flow conduction of each horizontal exhaust channel 14 is not less than the sum of the flow conduction of all vertical exhaust holes 13 on the corresponding radial adsorption groove 12 or concentric adsorption groove 11 connected above it.

[0059] A main suction duct 21 is provided on the handle 20. All horizontal suction ducts 14 converge radially below the center of the disk body and connect downwards to the main suction duct 21. The design of the main suction duct 21 must also meet the key flow conduction relationship: the flow conduction of the main suction duct 21 is not less than the sum of the flow conductions of all horizontal suction ducts 14.

[0060] Through the hierarchical flow channel design of the vertical air extraction port 13, the horizontal air extraction channel 14 and the main air extraction channel 21, and the flow conduction of each channel has been carefully optimized, the flow conduction of the entire air extraction system is maximized, thereby effectively achieving a fast and uniform vacuuming effect.

[0061] The specific configuration schemes for concentric adsorption trenches and radial adsorption trenches will be further elaborated below.

[0062] exist Figure 1 and Figure 2 In this embodiment, m concentric adsorption grooves 11 and n radial adsorption grooves 12 are machined on the adsorption surface of the disk 10. The number m of the concentric adsorption grooves 11 is set to at least 3, and the number n of the radial adsorption grooves 12 is set to at least 6. This configuration is a preferred solution that achieves the best balance between processing complexity and adsorption uniformity after fluid dynamics simulation and experimental verification.

[0063] In a preferred embodiment, the multiple concentric adsorption trenches 11 are uniformly distributed with the center of the disk 10 as the center, meaning the radius difference between adjacent concentric adsorption trenches 11 is equal. Correspondingly, the multiple radial adsorption trenches 12 are also uniformly distributed with the center of the disk 10 as the center, meaning the central angle between adjacent radial adsorption trenches 12 is equal. This symmetrical arrangement helps to form a stable and isotropic vacuum adsorption force field beneath the wafer.

[0064] However, the scope of protection of this invention is not limited thereto. In other embodiments, the multi-ring concentric adsorption trenches 11 and / or the plurality of radial adsorption trenches 12 may also employ a non-uniform distribution strategy to achieve specific adsorption performance. For example, to specifically enhance adsorption on easily warped wafer edge regions, the concentric adsorption trenches 11 near the periphery of the disk 10 can be arranged more densely; or, to meet the airflow field requirements of a specific process chamber, denser radial adsorption trenches 12 can be set in a specific azimuth angle region. The central angles between two adjacent radial adsorption trenches 12 in different regions can be the same or different.

[0065] Figure 1An example of non-uniform distribution is shown: within the innermost concentric adsorption trenches 11 in the central region of disk 10, the radial adsorption trenches 12 are relatively sparsely distributed, with a central angle of 90° between adjacent trenches; while in other areas of the concentric adsorption trenches 11, the radial adsorption trenches 12 are more densely distributed, with a central angle of 45° between adjacent trenches. This gradient density design from the center to the edge allows for regional fine-tuning of the adsorption intensity, thereby better adapting to wafers with different warpage characteristics and improving process tolerance and stability.

[0066] To more clearly demonstrate the technical advantages of the present invention, a quantitative comparison is made below between the traditional center-extraction scheme and the edge-extraction (distributed extraction) scheme of the vacuum adsorption heating plate in this embodiment.

[0067] The core basis for the evaluation is the gas pressure within the outermost concentric adsorption trenches under both schemes. The lower the pressure at this point, the greater the pressure difference between the upper and lower surfaces of the wafer, and the stronger the adsorption capacity for warped wafers.

[0068] In a 5 Torr process environment, the gas flow is in a viscous flow state, and its conductivity is calculated using the following formula:

[0069] ;

[0070] Where D is the equivalent channel diameter, η is the gas viscosity, and L is the channel length. This represents the average pressure.

[0071] The formula for calculating gas leakage is:

[0072] ;

[0073] Where Q is the leakage amount, Let be the air pressure at the pressure point to be determined. This is the air pressure at the vent.

[0074] Figure 4 A simplified cross-sectional diagram of a typical vacuum adsorption heating plate in the prior art is shown, such as... Figure 4 As shown, in a typical vacuum adsorption heating plate with a central evacuation scheme, the distance L = 130 mm from the pressure point (outermost groove) 31 to the central evacuation port 32 of the heating plate. The equivalent adsorption groove cross-sectional diameter D = 2 mm. Assume the pressure P at the central evacuation port 32 is... 下游 =1 torr, N2 viscosity at room temperature η=180μPa·s, average pressure taken as... =3torr (corresponding to 3×133 Pa), the calculated conductivity is:

[0075]

[0076] Assuming a gas leakage rate Q = 0.01 torr.L / s, the pressure at the point to be determined (outermost groove) is 31. .

[0077] Due to the low conductivity and high flow resistance of the adsorption trench, the pressure at the pressure point 31 (2.5 Torr) is 150% higher than the pressure at the central vent 32 (1 Torr), reflecting a serious lack of adsorption force in this area.

[0078] In comparison, such as Figure 3 As shown, in the edge extraction scheme of the present invention, since the vertical extraction holes 13 are distributed on the entire disk surface, the gas at the outermost concentric adsorption groove 11 only needs to flow to the nearest vertical extraction hole 13, and the distance L' from the pressure point to be determined (outermost groove) to the vertical extraction hole 13 is 17.5mm.

[0079] Under the condition that all other parameters remain unchanged, that is, the equivalent adsorption trench cross-sectional diameter D = 2 mm. Assume the pressure P at the vertical extraction hole 13. 下游 =1 torr, N2 viscosity at room temperature η=180μPa·s, average pressure taken as =3torr, and its conductivity is calculated as follows:

[0080]

[0081] Assuming a gas leakage rate Q = 0.01 torr.L / s, then the pressure at the pressure point to be determined (outermost groove) is... .

[0082] Due to the significantly improved conductivity, the outermost pressure (1.2 Torr) is only about 20% higher than the pressure of the vertical evacuation port 13 (1 Torr), indicating that the edge evacuation scheme of the present invention can effectively adsorb the edges of warped wafers.

[0083] In summary, the edge evacuation scheme of the vacuum adsorption heating plate proposed in this invention can maintain a lower air pressure at the outermost adsorption groove, thus significantly outperforming the traditional center evacuation scheme in adsorbing warped wafers.

[0084] This embodiment provides a semiconductor device, particularly a thin film deposition device, such as a chemical vapor deposition device or an atomic layer deposition device. The device integrates a vacuum adsorption heating plate, as described above, as its core component for wafer support and temperature control. Due to the use of the aforementioned vacuum adsorption heating plate with distributed vertical venting holes and a hierarchical flow channel design, this semiconductor device can achieve rapid, stable, and uniform adsorption and fixation of high-warpage wafers.

[0085] During the process, the wafer and the disk surface are closely bonded, ensuring excellent heat conduction efficiency and temperature field uniformity, thereby significantly improving the uniformity of film thickness and properties. This effectively suppresses problems such as particle contamination, abnormal film stress, and even peeling caused by wafer warping or poor adsorption, ultimately greatly improving process yield and product reliability.

[0086] The vacuum adsorption heating plate and semiconductor device provided by this invention have the following beneficial effects:

[0087] 1) By rationally setting the vertical air extraction holes in areas other than the innermost and outermost concentric adsorption trenches, and combining them with an independently set horizontal air extraction channel structure, the problem of wafer edge warping caused by excessive suction in the central area is effectively avoided, the phenomenon of edge leakage is prevented from aggravating, and the modularity and efficiency of the air extraction system are ensured, so as to achieve uniform, stable adsorption and rapid fixation of the wafer.

[0088] 2) By establishing a scientific flow conduction matching relationship, the flow conduction of the horizontal air extraction channel is not less than the sum of the flow conduction of all the vertical air extraction holes above it, and the flow conduction of the main air extraction channel is not less than the sum of the flow conduction of all the horizontal air extraction channels, thereby maximizing the flow conduction capacity of the entire air extraction system and significantly improving the air extraction efficiency.

[0089] 3) Concentric adsorption trenches and radial adsorption trenches can be uniformly or non-uniformly distributed according to actual needs, and vertical air extraction holes can also be flexibly arranged. The structure can be optimized and adjusted for different wafer warpage characteristics and process requirements. At the same time, the cross-sectional shape of the horizontal air extraction channel can be flexibly selected in various forms, so as to ensure performance while making the processing difficulty controllable.

[0090] As indicated in this invention and the claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0091] In the description of this invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0092] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0093] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0094] The above embodiments are provided for those skilled in the art to implement or use the present invention. Those skilled in the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope that conforms to the innovative features mentioned in the claims.

Claims

1. A vacuum adsorption heating plate, characterized in that, Includes the disc body and the disc handle: The disk body is provided with multiple concentric adsorption grooves and multiple radial adsorption grooves, and the multiple concentric adsorption grooves are connected through the radial adsorption grooves. The concentric or radial adsorption grooves are provided with multiple vertical air extraction holes. Each vertical air extraction hole is connected to a horizontal air extraction channel below it, and the horizontal air extraction channel is located inside the disc body; The handle is provided with a main air extraction channel, and all the horizontal air extraction channels converge radially into the main air extraction channel.

2. The vacuum adsorption heating plate according to claim 1, characterized in that, The vertical suction holes are located at the intersections of the concentric adsorption grooves and the radial adsorption grooves, except for the innermost and outermost concentric adsorption grooves; and / or On the concentric adsorption grooves other than the innermost and outermost rings, it is located at the midpoint of the intersection of two adjacent radial adsorption grooves.

3. The vacuum adsorption heating plate according to claim 1, characterized in that, The vertical air extraction hole is located on the radial adsorption groove, at the midpoint between the two intersections formed by the same radial adsorption groove and two adjacent concentric adsorption grooves.

4. The vacuum adsorption heating plate according to claim 1, characterized in that, The conductance of each horizontal suction channel is not less than the sum of the conductances of all vertical suction holes on the corresponding radial adsorption groove or concentric adsorption groove.

5. The vacuum adsorption heating plate according to claim 1, characterized in that, The conductance of the main extraction duct is not less than the sum of the conductances of all horizontal extraction ducts.

6. The vacuum adsorption heating plate according to claim 1, characterized in that, The cross-sectional shape of the horizontal air extraction duct is one of rectangle, square or circle.

7. The vacuum adsorption heating plate according to claim 1, characterized in that, The number of concentric adsorption grooves is at least 3 rings, and the number of radial adsorption grooves is at least 6.

8. The vacuum adsorption heating plate according to claim 1, characterized in that, The multiple concentric adsorption grooves are all arranged concentrically with the center of the disk as the center; The plurality of radial adsorption grooves are all opened along the diameter direction of the disk body; The multiple concentric adsorption grooves are interconnected through radial adsorption grooves.

9. The vacuum adsorption heating plate according to claim 1, characterized in that, The multiple concentric adsorption grooves are evenly distributed around the center of the disk, and the radius difference between two adjacent concentric adsorption grooves is equal. The plurality of radial adsorption grooves are evenly distributed around the center of the disk, and the central angles between two adjacent radial adsorption grooves are equal.

10. The vacuum adsorption heating plate according to claim 1, characterized in that, The multiple concentric adsorption grooves and / or the multiple radial adsorption grooves are non-uniformly distributed on the adsorption surface of the disk.

11. A semiconductor device, characterized in that, Includes the vacuum adsorption heating plate as described in any one of claims 1 to 10.

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