Thin film deposition equipment, processing method of semiconductor device and storage medium

Abstract

The invention provides thin film deposition equipment, a processing method of a semiconductor device and a storage medium. The thin film deposition equipment comprises a buffer cavity, the buffer cavity comprises a partition plate, a first heating mechanism and a cooling mechanism, the partition plate is transversely installed in the buffer cavity so as to divide the buffer cavity into a first interlayer and a second interlayer, the first heating mechanism is installed on the first interlayer, and the cooling mechanism is installed on the second interlayer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a thin film deposition apparatus, a method for processing semiconductor devices, and a computer-readable storage medium. Background Technology

[0002] In semiconductor chip manufacturing, wafer coating is a crucial step determining chip performance and quality. Wafer temperature control directly impacts coating uniformity, adhesion, and the stability of subsequent processes. Currently, the core buffer components of widely used cooling transfer platforms typically employ a single-layer design, and the temperature regulation function of the transfer chamber is relatively limited, usually only capable of heating or cooling the wafer. For wafers requiring preheating, additional dedicated preheating equipment is needed. This fails to meet the differentiated temperature requirements before and after coating, increasing equipment costs, extending wafer transfer time, and further hindering production efficiency.

[0003] The structural defects and functional limitations of the aforementioned existing technologies have led to a series of prominent technical problems. On the one hand, the single temperature regulation function of the transmission chamber and the single-layer buffer component structure restrict each other, forcing wafer preheating, coating, cooling, and other processes to be carried out sequentially, making parallel operation impossible. This results in a significant reduction in equipment capacity and makes it difficult to meet the large-scale, high-efficiency production demands of the semiconductor manufacturing industry. On the other hand, the single-layer buffer component structure is highly susceptible to conflicts in loading and unloading paths during wafer scheduling, leading to wafer jamming. This not only interrupts the normal production process but may also cause irreversible damage to the wafers and equipment, increasing production risks and maintenance costs.

[0004] In order to overcome the above-mentioned defects of the existing technology, there is an urgent need in the field for a thin film deposition technology to avoid the waiting time between various process flows and the conflict of wafer scheduling paths, to ensure the smoothness of the wafer transfer process, thereby effectively shortening the overall cycle from the wafer entering the platform to the completion of the process return, and effectively improving production capacity. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a thin film deposition apparatus, a semiconductor device processing method, and a computer-readable storage medium to avoid waiting time and wafer scheduling path conflicts between various process flows, ensure the smoothness of the wafer transfer process, thereby effectively shortening the overall cycle from wafer entering the platform to completing the process return, and significantly improving production capacity.

[0007] Specifically, the thin film deposition apparatus provided according to a first aspect of the present invention includes: a buffer cavity, including a partition, a first heating mechanism and a cooling mechanism, wherein the partition is horizontally installed inside the buffer cavity to divide the buffer cavity into a first partition and a second partition, the first heating mechanism is installed in the first partition, and the cooling mechanism is installed in the second partition.

[0008] Furthermore, in some embodiments of the present invention, the partition is made of heat-insulating material, and / or the thickness of the partition is not less than 50 mm, so as to provide heat insulation for the first partition and the second partition.

[0009] Furthermore, in some embodiments of the present invention, the first partition is located above the second partition, the first heating mechanism is installed on the top wall of the first partition, and the cooling mechanism includes a water-cooled plate installed in the lower part of the second partition.

[0010] The lower part of the first partition is provided with a wafer support for carrying the wafers that are transferred into the first partition.

[0011] Furthermore, in some embodiments of the present invention, the first partition of the buffer cavity is used to receive the first wafer to be processed and to preheat the first wafer to be processed, and the second partition of the buffer cavity is used to receive the second wafer after processing and to cool the second wafer after processing.

[0012] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus is characterized by further comprising: a second heating mechanism, installed on the top wall of the second partition layer, for heating the first wafer input into the second partition layer.

[0013] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus is characterized by further comprising: a controller configured to: in response to a command of a first control mode, firstly convey a first wafer to be processed to the first partition layer; after the first heating mechanism preheats the first wafer, output the first wafer to the rear end of the buffer cavity and convey a second wafer that has been processed to the second partition layer; after the cooling mechanism cools the first wafer, output the second wafer to the front end of the buffer cavity; and in response to a command of a second control mode, convey a third wafer to the first partition layer for heat preservation, so as to preheat the third wafer via the first heating mechanism and the first wafer to be processed via the second partition layer, and cool the processed second wafer.

[0014] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus further includes: a first valve disposed at the transfer port of the first partition layer for controlling the opening and closing of the first partition layer; and a second valve disposed at the transfer port of the second partition layer for controlling the opening and closing of the second partition layer.

[0015] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus further includes: a first transfer cavity, the first end of which is connected to the rear end of the buffer cavity, and the second end of which is connected to a first process cavity, for obtaining a first wafer to be processed from a first partition of the buffer cavity, and transferring a second wafer that has been processed to a second partition of the buffer cavity.

[0016] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus is characterized by further comprising: a second transfer cavity, the first end of which is connected to a load latching cavity, the second end of which is connected to the front end of the buffer cavity, and the third end of which is connected to a second process cavity, for at least transferring the first wafer to be processed to the first partition of the buffer cavity, and obtaining the processed second wafer from the second partition of the buffer cavity.

[0017] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus further includes: a cryogenic trapping pump connected to the first transfer chamber and / or the second transfer chamber, for trapping gas molecules in the corresponding transfer chamber to maintain a vacuum state in the corresponding transfer chamber.

[0018] Furthermore, the semiconductor device processing method provided by the second aspect of the present invention includes the following steps: firstly, a first wafer to be processed is fed into a first partition of a buffer cavity in a thin film deposition apparatus as described in any one of the first aspects of the present invention; after the first heating mechanism preheats the first wafer, the preheated first wafer is output to the rear end of the buffer cavity, and a second wafer that has been processed is fed into a second partition; after the cooling mechanism cools the first wafer, the second wafer is output to the front end of the buffer cavity. Furthermore, a computer-readable storage medium provided by the third aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, the semiconductor device processing method as described in the second aspect of the present invention is implemented. Attached Figure Description

[0019] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0020] Figure 1 A schematic diagram of the structure of a buffer cavity provided according to some embodiments of the present invention is shown.

[0021] Figure 2 A schematic diagram of the structure of a first heating mechanism provided according to some embodiments of the present invention is shown.

[0022] Figure 3 A schematic diagram of a cooling mechanism provided according to some embodiments of the present invention is shown.

[0023] Figure 4 A schematic diagram of the transmission cavity provided according to some embodiments of the present invention is shown.

[0024] Figure 5 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0025] Figure 6A A simulation diagram of the buffer cavity execution process in the prior art is shown.

[0026] Figure 6B A simulation diagram of a buffer chamber execution process provided according to some embodiments of the present invention is shown.

[0027] Figure label:

[0028] 10 Buffer Chamber

[0029] 101 partition

[0030] 102 First heating mechanism

[0031] 103 Second heating mechanism

[0032] 104 Cooling Mechanism

[0033] 105 wafer support

[0034] 20 First transmission cavity

[0035] 21 Second transmission cavity

[0036] 30 Cryogenic Collection Pump

[0037] 40 First Valve

[0038] 41 Second valve Detailed Implementation

[0039] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0040] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0041] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0042] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0043] As mentioned above, wafer coating is a crucial step in semiconductor chip manufacturing, determining chip performance and quality. Wafer temperature control directly impacts coating uniformity, adhesion, and the stability of subsequent processes. Currently, the core buffer components of widely used cooling transfer platforms typically employ a single-layer design, and the temperature regulation function of the transfer chamber is relatively limited, usually only capable of heating or cooling the wafer. For wafers requiring preheating, additional dedicated preheating equipment is needed. This fails to meet the differentiated temperature requirements before and after coating, increasing equipment costs, extending wafer transfer time, and further hindering production efficiency.

[0044] The structural defects and functional limitations of the aforementioned prior art have led to a series of prominent technical problems. On the one hand, the single temperature regulation function of the transmission chamber and the single-layer buffer component structure restrict each other, forcing wafer preheating, coating, cooling, and other processes to be carried out sequentially rather than in parallel. This results in a significant reduction in equipment capacity and makes it difficult to meet the large-scale, high-efficiency production demands of the semiconductor manufacturing industry. On the other hand, the single-layer buffer component structure is highly susceptible to conflicts in loading and unloading paths during wafer scheduling, which can lead to wafer jamming. This not only interrupts the normal production process but may also cause irreversible damage to the wafers and equipment, increasing production risks and maintenance costs.

[0045] To overcome the aforementioned deficiencies in prior art, this invention provides a thin film deposition apparatus, a semiconductor device processing method, and a computer-readable storage medium to avoid waiting time and wafer scheduling path conflicts between various process flows, ensuring the smoothness of the wafer transfer process, thereby effectively shortening the overall cycle from wafer entering the platform to completing the process return, and significantly improving production capacity.

[0046] In some non-limiting embodiments, the semiconductor device fabrication method provided in the second aspect of the present invention can be implemented based on the thin film deposition apparatus provided in the first aspect of the present invention. Specifically, the thin film deposition apparatus is equipped with a memory and a controller. The memory includes, but is not limited to, the computer-readable storage medium described in the third aspect of the present invention, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the semiconductor device fabrication method provided in the second aspect of the present invention.

[0047] Please refer to the details. Figure 1 , Figure 1 A schematic diagram of the structure of a buffer cavity provided according to some embodiments of the present invention is shown.

[0048] like Figure 1 As shown, the buffer cavity 10 includes a partition 101, a first heating mechanism 102, and a cooling mechanism 104. The partition 101 is installed laterally inside the buffer cavity 10 to divide the buffer cavity 10 into a first partition and a second partition. The first heating mechanism 102 is installed in the first partition, and the cooling mechanism 104 is installed in the second partition.

[0049] Here, the buffer cavity 10 can be used to allow the preheating process before wafer coating and the cooling process after coating to be carried out in parallel on the same transfer platform, such as titanium nitride process, sub-atmospheric pressure chemical vapor deposition (SACVD) process, and local oxidation lock (LOK) process, so as to avoid the waiting time between each process and the conflict of wafer scheduling path, improve the convenience and efficiency of wafer scheduling, thereby effectively shortening the overall cycle from the wafer entering the platform to the completion of the process return, and effectively improving production capacity.

[0050] In some embodiments, the partition 101 is made of heat-insulating material, and / or the thickness of the partition 101 is not less than 50 mm, to insulate the first partition and the second partition. Here, the heat-insulating material can be 6061-T6.

[0051] Please refer to the reference. Figures 1-3 , Figure 2 A schematic diagram of the structure of a first heating mechanism provided according to some embodiments of the present invention is shown. Figure 3 A schematic diagram of a cooling mechanism provided according to some embodiments of the present invention is shown.

[0052] like Figures 1-3As shown, the first partition is located above the second partition, and the first heating mechanism 102 is installed on the top wall of the first partition. Here, the cooling mechanism 104 includes a water-cooled plate, which is installed in the lower part of the second partition. A wafer support 105 is provided in the lower part of the first partition for carrying the wafers transferred into the first partition.

[0053] In some embodiments, the first partition of the buffer cavity 10 can be used to receive the first wafer to be processed and to preheat the first wafer to be processed. The second partition of the buffer cavity 10 can be used to receive the second wafer after processing and to cool the second wafer after processing.

[0054] In addition, the thin film deposition apparatus also includes a second heating mechanism 103. This second heating mechanism 103 can be mounted on the top wall of the second partition layer for heating the first wafer fed into the second partition layer.

[0055] In some embodiments, the thin film deposition apparatus further includes a controller. The controller is configured to:

[0056] In response to the command of the first control mode, a first wafer to be processed is first conveyed to the first partition. After the first heating mechanism preheats the first wafer, the first wafer is output to the rear end of the buffer cavity, and a second wafer that has been processed is conveyed to the second partition. After the cooling mechanism cools the first wafer, the second wafer is output to the front end of the buffer cavity. In response to the command of the second control mode, a third wafer is conveyed to the first partition to keep the third wafer warm via the first heating mechanism, and the first wafer to be processed is preheated via the second partition, and the second wafer that has been processed is cooled.

[0057] Specifically, the first control mode is a flow mode in which the first and second wafers are alternately preheated and cooled. In this mode, after responding to the first control mode command, the controller first feeds the first wafer to be processed into the first partition of the equipment to complete the preheating process. After the preheating process is completed, the controller further controls the equipment to output the preheated first wafer to the back end, providing the temperature conditions for the first wafer to enter the subsequent first process chambers such as thin film deposition. Simultaneously or continuing the preheating process, the controller retrieves the processed and cooled second wafer from the back end of the equipment. After performing cooling on the second wafer, it is output to the front end. Thus, this first control mode can sequentially execute a closed-loop process: front end input of the wafer to be processed, first partition preheating, back end feeding of the wafer to be processed, back end retrieval of the wafer to be cooled, cooling process, and front end output of the cooled wafer. This mode, through the alternating flow of multiple wafers and the tightly linked step-by-step process, is suitable for continuous batch wafer processing scenarios, achieving efficient coordination between preheating of the wafer to be processed and cooling of the wafer after processing, thereby improving the overall processing efficiency of the thin film deposition equipment.

[0058] The second control mode is a multi-wafer parallel integrated insulation, preheating, and cooling mode. In this mode, after responding to the second control mode command, the controller simultaneously performs differentiated temperature management processes on wafers in three different states and coordinates the use of the equipment's first and second partitions. Specifically, the controller can transport the third wafer, which is to be insulated first, to the first partition, where its insulation function maintains the temperature stability of the third wafer. Simultaneously, the second partition preheats the first wafer to be processed, completing the temperature pretreatment before processing. Furthermore, a cooling process can be simultaneously performed on the processed second wafer, achieving rapid cooling of the wafer after processing for subsequent wafer retrieval or storage. This second control mode, characterized by multi-task parallelism and differentiated multi-partition collaboration, is suitable for complex processing scenarios with higher wafer temperature control requirements. It can simultaneously meet the temperature management needs of wafers in different states, effectively improving the process compatibility and space utilization of the thin film deposition equipment.

[0059] Please continue to refer to this. Figure 1 The thin film deposition apparatus also includes a first valve 40 and a second valve 41. The first valve 40 is located at the wafer transfer port of the first partition layer and is used to control the opening and closing of the first partition layer. The second valve 41 is located at the wafer transfer port of the second partition layer and is used to control the opening and closing of the second partition layer.

[0060] Please refer to Figure 4 , Figure 4 A schematic diagram of the transmission cavity provided according to some embodiments of the present invention is shown.

[0061] like Figure 4 As shown, the thin film deposition apparatus also includes a first transfer cavity 20 and / or a second transfer cavity 21.

[0062] In some embodiments, the first end of the first transfer cavity 20 is connected to the rear end of the buffer cavity 10, and its second end is connected to the first process cavity, for obtaining the first wafer to be processed from the first partition of the buffer cavity 10 and transferring the processed second wafer to the second partition of the buffer cavity 10.

[0063] In some embodiments, the first end of the second transmission cavity 21 is connected to the load latch cavity, the second end is connected to the front end of the buffer cavity 10, and the third end is connected to the second process cavity, at least for transmitting the first wafer to be processed to the first partition of the buffer cavity 10, and obtaining the second wafer that has been processed from the second partition of the buffer cavity 10.

[0064] Furthermore, the thin film deposition apparatus also includes a cryogenic trapping pump 30. This cryogenic trapping pump 30 is connected to the first transfer chamber 20 and / or the second transfer chamber 21, and is used to trap gas molecules in the corresponding transfer chamber to maintain a vacuum state in the corresponding transfer chamber.

[0065] Here, the cryogenic trapping pump 30 structure serves as a key vacuum guarantee and impurity removal component within the process chamber of the thin film deposition equipment. It can accurately and efficiently capture and remove various residual gas molecules within the chamber, including reaction byproduct gases that may be generated during the deposition process, impurity gases such as water vapor, oxygen, and nitrogen that have seeped into the environment, as well as raw material gases that have not participated in the deposition reaction. This effectively ensures the stability and reliability of the metal film in terms of core quality indicators such as purity, density, uniformity, and microstructure integrity.

[0066] The working principle of the above-described thin film deposition equipment will be described below with reference to embodiments of semiconductor device fabrication methods. Those skilled in the art will understand that these embodiments of semiconductor device fabrication methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating methods of the thin film deposition equipment. Similarly, the thin film deposition equipment is also merely a non-limiting implementation of the present invention and does not constitute a limitation on the subject or order of execution of the steps in these semiconductor device fabrication methods.

[0067] Please refer to Figure 5 , Figure 5 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0068] like Figure 5 As shown, the thin film deposition equipment can first transport a first wafer to be processed to the first partition of the buffer cavity 10. After the first heating mechanism preheats the first wafer, the preheated first wafer is output to the rear end of the buffer cavity. Then, a second wafer that has been processed is transported to the second partition. After the cooling mechanism cools the first wafer, the second wafer is output to the front end of the buffer cavity 10.

[0069] Please refer to Figures 6A-6B , Figure 6A A simulation diagram of the buffer cavity execution process in the prior art is shown. Figure 6B A simulation diagram of a buffer chamber execution process provided according to some embodiments of the present invention is shown.

[0070] like Figures 6A-6B As shown, the wafer that has completed the corresponding process in the process chamber is transferred to the buffer chamber 10 via the transfer chamber. The high vacuum environment is maintained by the cryogenic trapping pump 30 in the buffer chamber 10, and the wafer is cooled by the cooling mechanism 104. Compared with the traditional form without the cooling mechanism 104 and the cryogenic trapping pump 30, the time for the wafer to cool from 400°C to 80°C is shortened from 364s to 37s.

[0071] In summary, the thin film deposition equipment, semiconductor device processing method, and computer-readable storage medium provided by this invention can be used to avoid waiting time and wafer scheduling path conflicts between various process flows, ensure the smoothness of the wafer transfer process, thereby effectively shortening the overall cycle from wafer entering the platform to completing the process return, and significantly improving production capacity.

[0072] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0073] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition apparatus, characterized in that, include: The buffer cavity includes a partition, a first heating mechanism, and a cooling mechanism. The partition is installed laterally inside the buffer cavity to divide the buffer cavity into a first partition and a second partition. The first heating mechanism is installed in the first partition, and the cooling mechanism is installed in the second partition.

2. The thin film deposition apparatus as described in claim 1, characterized in that, The partition is made of heat-insulating material, and / or the partition thickness is not less than 50mm, to insulate the first partition and the second partition.

3. The thin film deposition apparatus as described in claim 1, characterized in that, The first partition is located above the second partition, the first heating mechanism is installed on the top wall of the first partition, and the cooling mechanism includes a water-cooled plate installed in the lower part of the second partition. The lower part of the first partition is provided with a wafer support for carrying the wafers that are transferred into the first partition.

4. The thin film deposition apparatus as described in claim 1, characterized in that, The first partition of the buffer cavity is used to receive the first wafer to be processed and to preheat the first wafer to be processed. The second partition of the buffer cavity is used to receive the processed second wafer and to cool the processed second wafer.

5. The thin film deposition apparatus as described in claim 1, characterized in that, Also includes: The second heating mechanism is installed on the top wall of the second partition and is used to heat the first wafer that is input into the second partition.

6. The thin film deposition apparatus as described in claim 5, characterized in that, Also includes: The controller is configured to: in response to a command of a first control mode, first feed a first wafer to be processed to the first partition; after the first heating mechanism preheats the first wafer, output the first wafer to the rear end of the buffer cavity; and feed a second wafer that has been processed to the second partition; after the cooling mechanism cools the first wafer, output the second wafer to the front end of the buffer cavity; and In response to the command of the second control mode, the third wafer is transported to the first partition to keep the third wafer warm via the first heating mechanism, and the first wafer to be processed is preheated via the second partition, and the second wafer to be processed is cooled.

7. The thin film deposition apparatus as described in claim 1, characterized in that, Also includes: The first valve is located at the transfer port of the first partition and is used to control the opening and closing of the first partition. as well as The second valve is located at the transfer port of the second partition and is used to control the opening and closing of the second partition.

8. The thin film deposition apparatus as described in claim 1, characterized in that, Also includes: A first transfer cavity, with its first end connected to the rear end of the buffer cavity and its second end connected to the first process cavity, is used to obtain a first wafer to be processed from the first partition of the buffer cavity and transfer a second wafer that has been processed to the second partition of the buffer cavity.

9. The thin film deposition apparatus as described in claim 8, characterized in that, Also includes: The second transmission cavity has a first end connected to the load latch cavity, a second end connected to the front end of the buffer cavity, and a third end connected to the second process cavity. It is used at least to transmit the first wafer to be processed to the first partition of the buffer cavity and to obtain the second wafer that has been processed from the second partition of the buffer cavity.

10. The thin film deposition apparatus as described in claim 9, characterized in that, Also includes: A cryogenic trapping pump, connected to the first transfer chamber and / or the second transfer chamber, is used to trap gas molecules in the corresponding transfer chamber to maintain a vacuum state in the corresponding transfer chamber.

11. A method for fabricating a semiconductor device, characterized in that, Includes the following steps: First, a first wafer to be processed is fed into the first partition of the buffer cavity in the thin film deposition apparatus as described in any one of claims 1 to 10. After the first heating mechanism preheats the first wafer, the preheated first wafer is then output to the rear end of the buffer cavity. The processed second wafer is conveyed to the second partition layer. After the first wafer is cooled by the cooling mechanism, the second wafer is output to the front end of the buffer cavity.

12. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the semiconductor device fabrication method as described in claim 11 is implemented.

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