Preparation method of FMM and material processing equipment

Abstract

The invention discloses an FMM preparation method and material processing equipment, and relates to the field of semiconductor processing, and the method comprises the steps: carrying out the pretreatment of a strip-shaped metal substrate, removing the surface impurities of the strip-shaped metal substrate, and improving the flatness of the strip-shaped metal substrate; the two sides of the metal base material are thinned, and the thinning amount of the first surface of the metal base material is smaller than that of the second surface of the metal base material; and forming a plurality of evaporation holes penetrating through the first surface and the second surface on the metal substrate, wherein the evaporation holes are gradually expanded from the first surface to the second surface. According to the preparation method of the FMM, the internal stress in the material can be balanced in the metal base material thinning process, and the FMM is not prone to deformation in the preparation process or the evaporation process.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, in particular to a preparation method of FMM and a material processing device. BACKGROUND

[0002] A metal mask (FMM, Fine Metal Mask) is a core material in the production process of a display screen, which mainly functions to realize accurate pattern transfer in the evaporation process.

[0003] The material of the metal mask is a metal material, and the substrate for producing the FMM is usually in a roll shape to save storage space. During the production process, the substrate will undergo multiple rolling processes and be wound and packaged after rolling is completed. Internal stress will be generated in the metal substrate during the entire processing process. In the subsequent evaporation process, the FMM is prone to deformation due to the release of internal stress and cannot be completely attached to the substrate, resulting in abnormal pixel color mixing of the organic light-emitting diode (OLED, Organic Light-Emitting Diode) screen. SUMMARY

[0004] The present application aims to solve one of the technical problems in the related art to some extent. To this end, the present application provides a preparation method of FMM, which can balance the internal stress of the material during the thinning process of the metal substrate, so that the FMM is not prone to deformation during the preparation process or the evaporation process of the FMM.

[0005] In order to achieve the above-mentioned purpose, the present application adopts the following technical solutions: A preparation method of FMM, comprising: preprocessing a metal substrate in a strip shape to remove surface impurities and improve flatness; respectively performing thinning treatment on both sides of the metal substrate, wherein the thinning amount of the first surface of the metal substrate is less than the thinning amount of the second surface; forming a plurality of evaporation holes penetrating through the first surface and the second surface on the metal substrate, the evaporation holes being gradually expanded from the first surface to the second surface.

[0006] The application discloses a preparation method of FMM, which is used for processing and manufacturing a metal base material into FMM. The metal base material can become FMM after pretreatment, thinning treatment and forming of evaporation holes. In the pretreatment process, the metal base material is cleaned and prepared, so that the oil film, metal debris, dust and other impurities on the surface of the metal base material are cleaned, and the concave-convex parts on the surface of the metal base material are flattened, so that the metal base material after the pretreatment is in a clean and flat state, thereby facilitating the subsequent thinning treatment. The thickness of the metal base material after the thinning treatment can meet the requirements of FMM, so that the metal base material can enter the forming step of evaporation holes. The evaporation holes are used for providing a passage for evaporation materials in the FMM evaporation process. The evaporation materials penetrate the metal base material from the second surface to the first surface. According to process requirements, the evaporation holes are provided in a gradually expanding shape (horn shape), and the opening on the second surface is larger than the opening on the first surface, so as to improve the quality of the evaporation process.

[0007] In the prior art, due to the shape of the evaporation holes, the FMM is prone to deformation from the second surface to the first surface, so that the FMM cannot be completely attached to the substrate in the evaporation process, and the pixel color mixing of the OLED screen is abnormal. In the application, the two surfaces of the metal base material are thinned at the same time during the thinning, and the thinning amount of the two surfaces is controlled during the thinning process, so that the thinning amount of the second surface is greater than that of the first surface. During the thinning process, the metal base material can release a part of internal stress. Because the thinning amount of the second surface is greater, the internal stress released by the second surface is more than that of the first surface. The internal stress of the metal base material is balanced. Therefore, after the metal base material is prepared into FMM, the trend of the second surface deforming towards the first surface during the evaporation process of the FMM is weakened or eliminated, so that the FMM can be well attached to the substrate, thereby improving the yield of the screen.

[0008] Optionally, in the thinning treatment, etching solvents are sprayed to the first surface and the second surface respectively to thin the metal base material. The spraying amount of the etching solvent on the first surface is controlled to be less than that on the second surface, so that the thinning amount of the first surface is less than that of the second surface. When the etching solvent contacts the metal base material, the surface material can be removed through a chemical reaction to achieve the purpose of thinning. The removal amount of the surface material of the metal base material is closely related to the spraying amount of the etching solvent. The greater the spraying amount of the etching solvent, the greater the amount of material that can be etched and removed. By adjusting the spraying amount of the etching solvent on the first surface and the second surface respectively, the difference in the thinning amount between the first surface and the second surface can be formed.

[0009] Optionally, in the thinning process, the number of spray heads spraying etching solution to the first surface is less than the number of spray heads spraying etching solution to the second surface. The etching solution is dispersed and sprayed onto the metal substrate by the spray heads. The first surface and the second surface are located on different sides of the metal substrate, so the spray heads are also arranged on both sides. By adjusting the number of spray heads on both sides, the number of spray heads corresponding to the first surface is less than the number of spray heads corresponding to the second surface. In this way, at the same time, the second surface will be in contact with more etching solution than the first surface, so that the second surface has a faster etching rate, and the thinning amount of the second surface is greater than that of the first surface.

[0010] Optionally, at least part of the spray heads spraying etching solution to the first surface are intermittently turned on and off. By this scheme, the total time length of the spray heads spraying etching solution to the first surface is less than the total time length of the spray heads spraying etching solution to the second surface, which can reduce the total amount of etching solution sprayed to the first surface. The second surface will be in contact with more etching solution than the first surface, so that the second surface has a faster etching rate, and the thinning amount of the second surface is greater than that of the first surface. The total time length is the sum of the spraying time length of each spray head.

[0011] Optionally, at least part of the spray heads spraying etching solution to the first surface are intermittently turned on and off. By this scheme, the total time length of the spray heads spraying etching solution to the first surface is less than the total time length of the spray heads spraying etching solution to the second surface, which can reduce the total amount of etching solution sprayed to the first surface. The second surface will be in contact with more etching solution than the first surface, so that the second surface has a faster etching rate, and the thinning amount of the second surface is greater than that of the first surface. The total time length is the sum of the spraying time length of each spray head.

[0012] Optionally, the etching solution sprayed to the first surface and the etching solution sprayed to the second surface have independent supply channels respectively. In the thinning process, the flow rates of the two supply channels are controlled respectively, so that the etching solution spraying amount of the first surface is less than that of the second surface. By this scheme, the total amount of etching solution provided and sprayed to the first surface in unit time is less than the total amount of etching solution provided and sprayed to the second surface. The second surface will be in contact with more etching solution than the first surface, so that the second surface has a faster etching rate, and the thinning amount of the second surface is greater than that of the first surface.

[0013] Optionally, in the thinning process, the first surface and the second surface are respectively sprayed with etching solution to etch and thin the metal base, and the etching solution spraying flow rate of the first surface is controlled to be less than that of the second surface. Through the scheme, the etching solution sprayed to the second surface has a greater flow rate, so that the impact force of the etching solution on the second surface is greater than that on the first surface. The impact force is closely related to the surface material removal amount of the metal base. The greater the impact force, the faster the etching speed. Therefore, the second surface has a faster etching speed than the first surface, so that the thinning amount of the second surface is greater than that of the first surface.

[0014] Optionally, in the thinning process, a pressure towards the second surface is applied to the first surface, and the applied pressure is adjusted according to the change of the flatness of the metal base. The above-mentioned schemes for increasing the etching amount of the second surface all have a characteristic that the impact force of the etching solution on the second surface is greater than that on the first surface, so that the metal base has a tendency to protrude from the second surface towards the first surface during the thinning process, which affects the flatness of the metal base and ultimately affects the etching uniformity on the first surface and the second surface. By applying pressure to the first surface, the bending resistance of the metal base from the second surface to the first surface is enhanced. The size of the pressure can be adjusted according to the flatness of the metal base at any time to maintain the flatness of the metal base during the thinning process, and to ensure the etching uniformity of the first surface and the second surface.

[0015] Optionally, in the thinning process, the first surface and the second surface are respectively sprayed with etching solution to etch and thin the metal base, and the metal base is conveyed in a horizontal direction during the thinning process, and the first surface faces upwards and the second surface faces downwards. In the thinning process, the metal base is thinned by spraying etching solution on the metal base to etch and thin the metal base by chemical means. Through the scheme, the etching solution can be prevented from flowing in a certain direction on the surface of the metal base after contacting the metal base, so as to ensure the etching uniformity of the first surface and the second surface.

[0016] Optionally, in the thinning process, the etching solution spraying flow rate of the edge region of the first surface is controlled to be less than that of the middle region. The first surface is arranged upward, and the metal substrate is in a strip shape. In the width direction of the metal substrate, the middle region of the metal substrate can carry a part of the etching solution, while the etching solution of the edge region overflows from the edge of the first surface and cannot be retained. When the etching solution is sprayed to the first surface, the edge region of the first surface can directly contact the sprayed etching solution, while the middle region of the first surface carries the etching solution and blocks the sprayed etching solution. Therefore, on the first surface, the etching rate of the middle region is slower than that of the edge region, forming a shape of thick middle and thin edges. This easily causes the edges to deform toward the middle part during the production of the FMM or the FMM evaporation process, and the edge part is rolled up. By reducing the etching solution spraying flow rate of the edge region of the first surface, the etching rates of the middle region and the edge region are balanced, the etching amounts of the middle region and the edge region are consistent, or the difference between the etching amounts of the middle region and the edge region is reduced, so that the first surface has good flatness.

[0017] Optionally, the etching solution spraying speed of the edge region of the first surface is controlled to be less than that of the middle region. By reducing the etching solution spraying speed of the edge region of the first surface, the etching solution impact force received by the middle region of the first surface is greater than that received by the edge region, the etching rates of the middle region and the edge region are balanced, the etching amounts of the middle region and the edge region are consistent, or the difference between the etching amounts of the middle region and the edge region is reduced, so that the first surface has good flatness.

[0018] Optionally, the total etching solution spraying time length of the edge region of the first surface is controlled to be less than that of the middle region. By this scheme, the middle region of the first surface can receive more sprayed etching solution, so as to balance the etching rates of the middle region and the edge region, make the etching amounts of the middle region and the edge region consistent, or reduce the difference between the etching amounts of the middle region and the edge region, and ensure that the first surface has good flatness.

[0019] Optionally, the thinning difference between the first surface and the second surface is not less than 10% of the thickness of the metal substrate after thinning, and the thinning amount of the first surface is not less than 2.5 μm.

[0020] The application also provides a material processing device, which comprises a feeding device for conveying a metal substrate in a strip shape, a pretreatment device for removing surface impurities of the metal substrate and improving flatness of the metal substrate, and a thinning device arranged downstream of the pretreatment device and used for spraying etching solution on both sides of the metal substrate to perform a thinning treatment on the metal substrate. The material processing device is used for processing the metal substrate by the above preparation method, so that the thinning amount of the first surface of the metal substrate is less than that of the second surface. The material processing device is used for processing the metal substrate before opening the evaporation hole, so that the thickness of the metal substrate meets the requirements of the FMM. The material processing device performs the pretreatment and thinning treatment on the metal substrate by the above preparation method. The processed metal substrate has the same beneficial effects as the metal substrate processed by the above preparation method. The beneficial effect reasoning process is similar, and thus will not be described here.

[0021] Optionally, the thinning device comprises a first spraying part and a second spraying part arranged oppositely, the first spraying part is used for spraying etching solution on the first surface, and the second spraying part is used for spraying etching solution on the second surface to perform etching thinning on the metal substrate. The first spraying part and the second spraying part each comprise a plurality of spray heads. The number of spray heads for spraying etching solution on the first surface is less than the number of spray heads for spraying etching solution on the second surface.

[0022] Optionally, part of the spray heads of the first spraying part are controlled to remain closed, so that the number of spray heads for spraying etching solution by the first spraying part is less than the number of spray heads for spraying etching solution by the second spraying part.

[0023] Optionally, at least part of the spray heads of the first spraying part are controlled to be intermittently started and stopped, so that the total spraying time of the first spraying part is less than the total spraying time of the second spraying part.

[0024] Optionally, the thinning device comprises a first spraying part and a second spraying part arranged oppositely, the first spraying part is used for spraying etching solution on the first surface, and the second spraying part is used for spraying etching solution on the second surface to perform etching thinning on the metal substrate. The flow rate of etching solution sprayed by the first spraying part is less than the flow rate of etching solution sprayed by the second spraying part.

[0025] Optionally, the first spraying part further comprises a plurality of pressure rollers arranged at intervals along the conveying direction of the metal substrate. The pressure rollers apply pressure to the first surface to maintain the flatness of the metal substrate. The pressure applied by the pressure rollers is adjusted according to the change of the flatness of the metal substrate.

[0026] Optionally, the first spraying part and the second spraying part are arranged in an up-down interval, the metal substrate is conveyed in a horizontal direction, and the first surface faces upward and the second surface faces downward, the plurality of nozzles of the first spraying part are divided into a plurality of groups of interval spraying groups in the conveying direction of the metal substrate, each of the spraying groups comprises an outside nozzle and an inside nozzle, the spraying area of the outside nozzle covers the edge area of the first surface, the spraying area of the inside nozzle covers the middle area of the first surface, and the etching solvent spraying flow of the outside nozzle is less than that of the inside nozzle.

[0027] Optionally, the etching solvent spraying speed of the outside nozzle is less than that of the inside nozzle.

[0028] Optionally, the outside nozzle is intermittently started.

[0029] The features and advantages of the present application will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings. The best mode or means for carrying out the present application will be described in detail in conjunction with the accompanying drawings, but the present application is not limited to the technical solutions. In addition, the features, elements and components appearing in each of the following text and drawings are multiple, and different symbols or numbers are marked for the convenience of representation, but all represent the same or similar structure or function of the components. BRIEF DESCRIPTION OF DRAWINGS

[0030] The present application will be further described below in conjunction with the accompanying drawings: Figure 1 The flow chart of the preparation method of the FMM of the present application.

[0031] Figure 2 The structural schematic diagram of the material processing equipment of the present application.

[0032] Figure 3 The partial structural schematic diagram of the thinning device in the present application.

[0033] Figure 4 The cross-sectional view of the metal substrate in the thinning stage in the present application.

[0034] Figure 5 The nozzle distribution schematic diagram of the first spraying part in the present application.

[0035] Figure 6 The nozzle distribution schematic diagram of another first spraying part in the present application.

[0036] Figure 7 The structural schematic diagram of the feeding device in the present application.

[0037] Figure 8 The structural schematic diagram of the deviation rectifying device in the present application.

[0038] Figure 9 Flatness of the FMM processed by the prior art for the metal base after processing.

[0039] Figure 10 Flatness of the FMM processed by the prior art for the metal base after processing.

[0040] Figure 11 Flatness of the FMM processed by the prior art for the metal base after processing.

[0041] Reference signs: Metal base 100, first surface 110, second surface 120; Preprocessing device 200; Thinning device 300, first spraying part 310, second spraying part 320, spray head 330, spraying group 331, outer side spray head 3331, inner side spray head 3332, pressure roller 340; First winding mechanism 400, second winding mechanism 410, tension sensor 420, deviation correction sensor 430, support roller 431, support slide rail 432, deviation correction controller 433. DETAILED DESCRIPTION

[0042] The embodiments of the present application are described below in detail, examples of which are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. Based on the embodiments in the embodiments, it is intended to explain the present application, and cannot be understood as a limitation of the present application.

[0043] In the present specification, "one embodiment" or "an example" or "an example" means that a specific feature, structure or characteristic described in connection with the embodiment itself can be included in at least one embodiment of the present disclosure. The appearance of the phrase "in one embodiment" at various places in the specification does not necessarily mean the same embodiment.

[0044] Reference Figures 1 to 11 The present application discloses a preparation method of FMM and a material processing device.

[0045] The preparation method of FMM includes the following steps: S10, preprocessing, removing impurities on the surface of the metal base 100 and improving the flatness thereof; S20, thinning treatment, respectively thinning both sides of the metal base 100, wherein the thinning amount of the first surface 110 of the metal base 100 is less than that of the second surface 120; S30, forming evaporation holes, forming a plurality of evaporation holes penetrating through the first surface 110 and the second surface 120 on the metal base material 100, the evaporation holes are divergent from the first surface 110 to the second surface 120.

[0046] The preparation method of the FMM is used to process the metal base material 100, and the metal base material 100 is prepared into the FMM. After the pretreatment, the thinning treatment, and the formation of the evaporation hole, the metal base material 100 can become the FMM. In step S10, the metal base material 100 is cleaned and prepared, so that the oil film, metal debris, dust and other impurities on the surface are cleaned, and the concave and convex parts on the surface are flattened, so that the metal base material 100 after the pretreatment is in a clean and flat state, so as to facilitate the subsequent thinning treatment. After step S20, the thickness of the metal base material 100 can meet the requirements of the FMM, so that step S30 of forming evaporation holes can be entered. The evaporation hole is used for the evaporation material to pass through during the FMM evaporation process, and the evaporation material penetrates through the metal base material 100 from the second surface 120 to the first surface 110. According to the process requirements, the evaporation hole is set to be divergent, and the opening on the second surface 120 is larger than the opening on the first surface 110, so as to improve the quality of the evaporation process. The formation of the evaporation hole involves gluing, exposure, development, etching, and degumming. After the evaporation hole is formed, subsequent auxiliary processes such as cleaning and quality inspection are carried out, and finally a qualified FMM is formed.

[0047] In the prior art, due to the shape of the evaporation hole, the FMM is prone to deformation from the second surface 120 to the first surface 110, which causes the FMM to fail to completely conform to the substrate during the evaporation process, resulting in abnormal pixel color mixing of the OLED screen. In this application, the metal base material 100 is thinned while the two surfaces of the metal base material 100 are thinned, and the thinning amount of the two surfaces is controlled during the thinning process, so that the thinning amount of the second surface 120 is greater than that of the first surface 110. The metal base material 100 can release a part of the internal stress during the thinning process. Because the thinning amount of the second surface 120 is greater, the internal stress released by the second surface 120 is more than that of the first surface 110, so that the internal stress of the metal base material 100 is balanced. Therefore, after the metal base material 100 is prepared into the FMM, the FMM is subjected to the evaporation process, and the tendency of the second surface 120 to deform towards the first surface 110 will be weakened or eliminated, so that the FMM can conform well to the substrate to improve the yield of the screen, and the utilization rate of the metal base material 100 can be improved, the material loss can be reduced, and the cost can be reduced.

[0048] The material processing equipment is used for processing the metal substrate 100 in steps S10 and S20, and comprises a feeding device, a pretreatment device 200 and a thinning device 300 arranged downstream of the pretreatment device 200. The steps S10 and S20 are respectively performed by the pretreatment device 200 and the thinning device 300, the pretreatment device 200 is used for pretreating the metal substrate 100 to be processed, and the thinning device 300 is used for thinning the thickness of the pretreated metal substrate 100. In the thinning stage of the metal substrate 100, the thinning device 300 can spray etching solvent to the metal substrate 100 to chemically reduce the thickness of the metal substrate 100 to meet the requirements of FMM production.

[0049] Of course, the thinning device can also thin the metal substrate by mechanical processing, and the application preferably uses chemical thinning.

[0050] The strip-shaped metal substrate 100 is wound into a roll, and the feeding device has the functions of unwinding, pinch feeding and winding the metal substrate 100, and comprises a first roll mechanism 400 and a second roll mechanism 410, the first roll mechanism 400 is used for unwinding the metal substrate 100, and the second roll mechanism 410 is used for winding the metal substrate 100, the metal substrate 100 gradually moves from the first roll mechanism 400 to the second roll mechanism 410 under unwinding and winding, and the metal substrate 100 is conveyed by the feeding device on the pretreatment device 200 and the thinning device 300.

[0051] The step S10 comprises a plurality of processing steps, including flattening, alkali washing, water washing, air drying and the like, which are all completed by the pretreatment device 200. The first roll mechanism 400 and the second roll mechanism 410 are respectively arranged on the two sides of the pretreatment device 200, and the roll on the first roll mechanism 400 is unwound, undergoes the above-mentioned processing steps and is wound to the second roll mechanism 410.

[0052] The first roll mechanism 400 and the second roll mechanism 410 are also respectively arranged on the two sides of the thinning device 300, and the roll on the second roll mechanism 410 on the side of the pretreatment device 200 can be transferred to the first roll mechanism 400 on the side of the thinning device 300, so that the metal substrate roll can be continuously unwound, pass through the thinning device 300 and be subjected to thinning treatment, and then be wound to the second roll mechanism 410 on the other side of the thinning device 300.

[0053] The thinning device 300 comprises a first spraying part 310 and a second spraying part 320, which are oppositely arranged and can spray etching solvent towards each other, and a certain interval is maintained between the two to form a gap, so that the metal substrate 100 can pass through the position between the first spraying part 310 and the second spraying part 320, and the etching solvent can be sprayed onto the two surfaces of the metal substrate 100 which need to be thinned, and the two surfaces can be simultaneously etched and thinned.

[0054] Before the metal base 100 is conveyed, the metal base 100 is detected to determine the internal stress direction, and then the orientation of the metal base 100 is adjusted according to the internal stress direction, so that one surface of the metal base 100 faces the first spraying part 310 and is defined as the first surface 110, and the other surface of the metal base 100 faces the second spraying part 320 and is defined as the second surface 120. In the thinning stage, the etching efficiency of the second surface 120 is improved, so that the etching speed of the second surface 120 is faster than the etching speed of the first surface 110, and finally the thinning amount of the second surface 120 is greater than the thinning amount of the first surface 110.

[0055] Among them, the judgment of the internal stress direction generally has two kinds: one is to directly judge according to the source of the raw material; the other is to intercept a section of the raw material, and then to perform FMM production after the two sides are thinned by equal amount, and then to perform evaporation process, and finally to judge according to the deformation direction.

[0056] Based on the above scheme, in an embodiment of the present application, the first spraying part 310 and the second spraying part 320 are arranged in an upper and lower interval, the metal base 100 is conveyed in a horizontal direction, and the first surface 110 faces upward and the second surface 120 faces downward. Such arrangement can avoid the etching solvent from flowing in a certain direction after contacting the metal base 100, so as to ensure the uniform etching of the first surface 110 and the second surface 120.

[0057] It should be noted that the uniform etching here does not mean that the etching amounts of the first surface 110 and the second surface 120 are the same, but means that the etching amount of the first surface 110 is uniform to avoid the first surface 110 from having undulations, and the etching amount of the second surface 120 is uniform to avoid the second surface 120 from having undulations, so that the processed metal base 100 has good flatness.

[0058] Based on the above embodiment, in an embodiment of the present application, in step S20, the etching solvent spraying amount of the first surface 110 is controlled to be less than the etching solvent spraying amount of the second surface 120, so that the thinning amount of the first surface 110 is less than the thinning amount of the second surface 120.

[0059] The etching solvent spraying amount refers to the total amount of etching solvent sprayed in a unit of time.

[0060] The etching solvent can remove the surface material of the metal substrate 100 by chemical reaction when it is in contact with the metal substrate 100, and the amount of surface material removed from the metal substrate 100 is closely related to the spraying amount of the etching solvent. The greater the spraying amount of the etching solvent, the more etching solvent is in contact with the surface of the metal substrate 100 per unit time, the faster the chemical reaction rate, and the greater the amount of material that can be etched and removed. By adjusting the spraying amount of the etching solvent sprayed onto the first surface 110 and the second surface 120 respectively, the difference in the thinning amount between the first surface 110 and the second surface 120 can be formed, so as to achieve the purpose of balancing the internal stress of the material.

[0061] The first spraying part 310 and the second spraying part 320 each include a plurality of spray heads 330, and the etching solvent is dispersed and uniformly sprayed onto the metal substrate 100 through the spray heads 330, so as to avoid that the metal substrate 100 locally contacts too much etching solvent and forms undulations on the first surface 110 and the second surface 120. The spraying amount of the etching solvent on the first surface 110 is controlled to be less than the spraying amount of the etching solvent on the second surface 120, and actually the spraying amount of the etching solvent of the first spraying part 310 is less than the spraying amount of the etching solvent of the second spraying part 320, so that the etching solvent contacted by the first surface 110 is less than the etching solvent contacted by the second surface 120.

[0062] Based on the above embodiments, in one embodiment of the present application, a plurality of adjustment modes for controlling the spraying amount of the etching solvent of the first spraying part 310 and the second spraying part 320 are specifically disclosed.

[0063] Scheme one: The number of spray heads of the first spraying part 310 is less than the number of spray heads of the second spraying part 320. Through the disclosed mode of scheme one, at the same time, the second surface 120 will contact more etching solvent than the first surface 110, so that the second surface 120 has a faster etching rate, and the thinning amount of the second surface 120 is greater than the thinning amount of the first surface 110.

[0064] Scheme two: Control part of the spray heads 330 of the first spraying part 310 to remain closed, so that the number of spray heads 330 of the first spraying part 310 for spraying the etching solvent is less than the number of spray heads 330 of the second spraying part 320 for spraying the etching solvent. Through the disclosed mode of scheme two, the etching solvent sprayed by the first spraying part 310 can be reduced, and the second surface 120 will contact more etching solvent than the first surface 110, so that the second surface 120 has a faster etching rate, and the thinning amount of the second surface 120 is greater than the thinning amount of the first surface 110.

[0065] Scheme three: controlling the at least part of the nozzles 330 of the first spraying part 310 to intermittently start and stop, so that the total spraying time of the first spraying part 310 is less than the total spraying time of the second spraying part 320. By the way disclosed in scheme three, the total amount of etching solvent sprayed by the first spraying part 310 can be reduced, and the second surface 120 will be in contact with more etching solvent than the first surface 110, so that the second surface 120 has a faster etching rate, and the thinning amount of the second surface 120 is greater than that of the first surface 110. The total spraying time is the sum of the spraying time of each nozzle 330.

[0066] Schemes one to three can be implemented alone or in combination.

[0067] Unlike the above embodiments, in another embodiment of the present application, the first spraying part 310 and the second spraying part 320 have independent etching solvent supply channels, and in step S20, the etching solvent supply channel of the first spraying part 310 is controlled to have a smaller solvent flow than the etching solvent supply channel of the second spraying part 320. By this scheme, the total amount of etching solvent provided to the first spraying part 310 per unit time is less than the total amount of etching solvent provided to the second spraying part 320, and the second surface 120 will be in contact with more etching solvent than the first surface 110, so that the second surface 120 has a faster etching rate, and the thinning amount of the second surface 120 is greater than that of the first surface 110.

[0068] The scheme disclosed in this embodiment, although different from the scheme for achieving different thinning amounts in the above embodiments, can also be implemented together with the schemes disclosed in the above embodiments.

[0069] Unlike the above embodiments, in another embodiment of the present application, in step S20, the etching solvent spraying flow rate of the first surface is controlled to be less than that of the second surface.

[0070] The etching solvent flow rate sprayed by the first spraying part 310 is less than that sprayed by the second spraying part 320, so that the thinning speed of the first surface 110 is slower than that of the second surface 120.

[0071] By this scheme, the etching solvent sprayed by the second spraying part 320 has a greater flow rate, so that the impact force of the etching solvent sprayed by the second spraying part 320 on the second surface 120 is greater than that of the etching solvent sprayed by the first spraying part 310 on the first surface 110, and the impact force is closely related to the amount of surface material removed from the metal substrate 100. The greater the impact force, the faster the etching speed. In this way, the second surface 120 has a faster etching speed than the first surface 110, so that the thinning amount of the second surface 120 is greater than that of the first surface 110.

[0072] Specifically, the embodiment discloses two implementation solutions.

[0073] Solution one: the spray head 330 of the second spraying part 320 is a pressurized spray head. Through the solution one, under the same etching solvent supply flow, the etching solvent sprayed by the pressurized spray head has higher flow rate and impact force, thereby significantly improving the etching speed of the second surface 120, and making the thinning amount of the second surface 120 greater than that of the first surface 110.

[0074] Solution two: the distance between the spray head 330 of the first spraying part 310 and the metal substrate 100 is greater than the distance between the spray head 330 of the second spraying part 320 and the metal substrate 100. Through the solution two, because the distance between the spray head 330 of the second spraying part 320 and the metal substrate 100 is smaller, the impact force of the etching solvent sprayed by the spray head 330 of the second spraying part 320 to the second surface 120 is greater than the impact force of the etching solvent sprayed by the spray head 330 of the first spraying part 310 to the first surface 110, and the etching speed of the second surface 120 is faster than that of the first surface 110, thereby making the thinning amount of the second surface 120 greater than that of the first surface 110.

[0075] The solution one and the solution two can be implemented independently or jointly.

[0076] The solution disclosed in the embodiment can be implemented independently or jointly with the solution disclosed in the above embodiment.

[0077] In the above several embodiments, a plurality of means for realizing that the thinning amount of the first surface 110 is less than that of the second surface 120 are disclosed, whether the etching solvent spraying amount of the second spraying part 320 is increased or the etching solvent spraying speed of the second spraying part 320 is increased, the force borne by the second surface 120 will be greater than that borne by the first surface 110, which will cause the second surface 120 to have a tendency of protruding towards the first surface 110 during the thinning process, thereby affecting the flatness of the metal substrate 100, and finally affecting the etching uniformity on the first surface 110 and the second surface 120. Based on the above embodiment, in an embodiment of the present application, in step S20, a pressure towards the second surface 120 is applied to the first surface 110, and the pressure size is adjusted according to the change of the flatness of the metal substrate 100. By applying the pressure to the first surface 110, the bending resistance of the metal substrate 100 from the second surface 120 to the first surface 110 is enhanced, and the pressure size can be adjusted at any time according to the flatness of the metal substrate 100, so as to maintain the flatness of the metal substrate 100 during the thinning process, and ensure the etching uniformity of the first surface 110 and the second surface 120.

[0078] Specifically, as Figure 3As shown, the first spray section 310 also includes a plurality of pressure rollers 340 arranged at intervals along the conveying direction of the metal substrate 100, and the pressure rollers 340 apply pressure to the first surface 110.

[0079] The pressure roller 340 applies pressure to the first surface 110, thereby enhancing the rigidity of the metal substrate 100 in the direct contact area between the first surface 110 and the pressure roller 340, as well as the surrounding area, thereby enhancing the bending resistance of the metal substrate 100 from the second surface 120 to the first surface 110.

[0080] The pressure roller 340 is a long strip roller arranged along the width direction of the metal substrate 100. Its length is not less than the width of the metal substrate 100, and both sides of the metal substrate 100 are in contact with the same pressure roller 340, so as to avoid the pressure roller 340 only applying pressure to a part of the metal substrate 100 in the width direction, which would cause undulations in the width direction.

[0081] The pressure roller 340 is a driven roller, or it can be an active roller whose rotation speed is adjusted according to the conveying speed of the metal substrate 100.

[0082] The number of pressure rollers 340 is set to multiple, and the force applied by each pressure roller 340 to the first surface 110 can be adjusted individually.

[0083] Because the metal substrate 100 is strip-shaped and the first surface 110 faces upwards, a pooling effect (such as...) will occur during the etching process. Figure 4 (As shown) — In its width direction, the central region of the metal substrate 100 can hold a portion of the etching solvent, while the etching solvent in the edge region overflows from the edge of the first surface 110 and cannot remain. When the nozzle 330 sprays the etching solvent toward the first surface 110, the edge region of the first surface 110 can directly contact the sprayed etching solvent, while the central region of the first surface 110, because it carries the etching solvent, will block the sprayed etching solvent. Therefore, on the first surface 110, the etching rate in the central region is slower than the etching rate in the edge region, ultimately forming a shape that is thick in the middle and thin at both sides. Figure 4 This shape is clearly visible, which easily leads to deformation of both sides towards the middle during the production of the FMM or during the evaporation process, forming a shape where the edges curl upwards. Based on the above embodiments, in one embodiment of the present invention, in step S20, the etching solvent spray flow rate of the edge region of the first surface 110 is controlled to be less than that of the middle region. By reducing the etching solvent spray flow rate of the edge region of the first surface, the etching rates of the middle region and the edge region are balanced, so that the etching amounts of the two are consistent or the difference between them is reduced, ensuring that the first surface has better flatness.

[0084] Specifically, such as Figure 5As shown, the plurality of spray heads 330 of the first spraying part 310 are divided into a plurality of groups of spraying groups 331 arranged at intervals along the conveying direction of the metal substrate 100, each spraying group 331 includes a plurality of spray heads 330, which can be divided into outer spray heads 3331 and inner spray heads 3332 according to their setting positions. In the width direction of the metal substrate 100, the outer spray heads 3331 are arranged on both sides of the inner spray heads 3332, the spraying area of the inner spray heads 3332 covers the middle region of the first surface 110, and the spraying area of the outer spray heads 3331 covers the edge region on both sides of the middle region of the first surface 110, and the etching solvent spraying flow of the outer spray heads 3331 is less than that of the inner spray heads 3332.

[0085] By making the etching solvent spraying flow of the outer spray heads 3331 less than that of the inner spray heads 3332, the etching rate of the edge region of the first surface 110 is reduced, and the etching rates of the middle region and the edge region of the first surface 110 are comparable.

[0086] Although the etching solvent accumulated in the middle region can also continuously react with the middle region of the first surface 110, as the reaction time increases, the concentration of the etching solvent will also decrease; the edge region of the first surface 110 has a higher reaction rate due to the continuous flow of etching solvent, and experiments have shown that about 80% of the material is removed by the flowing etching solvent during the thinning process.

[0087] The present embodiment discloses four implementation schemes.

[0088] Scheme one: the etching solvent spraying speed of the outer spray heads 3331 is less than that of the inner spray heads 3332. By the way disclosed by scheme one, the etching solvent spraying speed of the outer spray heads 3331 is reduced, so that the etching solvent impact force on the middle region of the first surface 110 is greater than that on the edge region, and the etching rates of the middle region and the edge region are balanced.

[0089] Scheme two: the outer spray heads 3331 are intermittently started. By the way disclosed by scheme two, the outer spray heads 3331 are intermittently started, the etching time of the edge region of the first surface 110 is reduced, the etching amount of the edge region of the first surface 110 is reduced, and the etching rates of the middle region and the edge region are balanced.

[0090] Scheme three: as Figure 6As shown, the density of the outer side nozzles 3331 is reduced. Specifically, each group of nozzles 331 includes two rows of inner side nozzles 3332 and one row of outer side nozzles 3331, which are located between the two rows of inner side nozzles 3332, or three rows of inner side nozzles 3332 and two rows of outer side nozzles 3331, etc., under the premise of ensuring the uniformity of the etching solution sprayed by the nozzles 330. Through the mode disclosed in Scheme Three, the amount of spraying in the edge region of the first surface 110 can be reduced, the etching speed in the edge region can be slowed down, and the etching rates in the middle region and the edge region can be balanced.

[0091] Scheme Four: Reduce the spraying flow of the outer side nozzles 3331. The purpose of Scheme Four is the same as that of Scheme Three, i.e., to reduce the amount of spraying in the edge region of the first surface 110, slow down the etching speed in the edge region, and balance the etching rates in the middle region and the edge region.

[0092] Schemes One to Four can be implemented individually or jointly.

[0093] Based on the above embodiments, in one embodiment of the present application, the difference in the thinning amount of the first surface 110 and the second surface 120 is not less than 10% of the thickness of the metal substrate 100 after thinning, and the thinning amount of the first surface 110 is not less than 2.5 μm.

[0094] wherein the difference in the thinning amount is the difference between the thinning amount of the first surface 110 and the thinning amount of the second surface 120; and 2.5 μm is the minimum thinning amount of the first surface 110.

[0095] For example, the thinning amount of the first surface 110 can be set to 1 / 2, 1 / 3, etc. of the thinning amount of the second surface 120.

[0096] Table 1.0

[0097] As shown in Table 1.0 above, the flatness of the finished product in the width direction is shown when the thinning amounts of the two surfaces are the same. Ah is the thinning amount of the first surface, Bh is the thinning amount of the second surface, and the finished product is FMM.

[0098] Table 2.0

[0099] As shown in Table 2.0 above, the flatness of the finished product is shown when the thinning amount of the first surface is 1 / 2 of the thinning amount of the second surface.

[0100] Table 3.0

[0101] As shown in Table 3.0 above, the flatness of the finished product is shown when the thinning amount of the first surface is 1 / 3 of the thinning amount of the second surface.

[0102] Comparing the data in Table 2.0 and Table 3.0 with the data in Table 1.0, it can be seen that the flatness of the metal substrate has been significantly improved after the improvement. The above tables can be referred to simultaneously with the accompanying Figure 9 to the accompanying Figure 11 .

[0103] Based on the above embodiments, in one embodiment of the present application, as shown in Figure 7 , the first winding mechanism 400 and the second winding mechanism 410 are also provided with a tension sensor 420 to detect the tension of the metal substrate 100 in real time, and the feeding device adjusts the tension of the metal substrate 100 according to the detection result to ensure that the tension of the metal substrate 100 is uniform.

[0104] The pressure roller 340 can also adjust the pressure applied to the first surface 110 according to the detection data of the tension sensor 420.

[0105] Based on the above embodiments, in one embodiment of the present application, as shown in Figure 8 , a plurality of deviation correction devices are arranged at intervals on the conveying path of the metal substrate 100, and the deviation correction device comprises a deviation correction sensor 430 for detecting the center position of the passing metal substrate 100. During the preparation of the FMM, the feeding device adjusts the position of the metal substrate 100 according to the detection signal of the deviation correction sensor 430.

[0106] The deviation correction device further comprises a support roller 431 and a support slide rail 432 for adjusting the height of the support roller 431, and the support slide rail 432 is arranged at both ends of the support roller 431 and can adjust the height position of both ends of the support roller 431. After the metal substrate 100 passes around the support roller 431, it passes through the deviation correction sensor 430, and a signal interaction is established between the deviation correction sensor 430 and a deviation correction controller 433 on the side of the support roller 431. The deviation correction controller 433 controls the two support slide rails 432 respectively according to the signal data of the deviation correction sensor 430 to adjust the height position of both ends of the support roller 431 to correct the conveying deviation of the metal substrate 100.

[0107] Based on the above embodiments, in one embodiment of the present application, in step S10, the pretreatment comprises a plurality of processes, which are, in sequence, an alkali washing process, a water washing process and a drying process. Correspondingly, a plurality of processing areas are provided on the pretreatment device 200, which are, in sequence along the conveying direction of the metal substrate 100, an alkali washing area, a water washing area and a drying area. The metal substrate 100 needs to be flattened before being subjected to alkali washing.

[0108] As shown in Figure 2 , Figure 2 The upper part of the drawing is a schematic diagram of the pretreatment device 200, and three areas are shown in the drawing. From left to right in the drawing, they are, in sequence, alkali washing, water washing and drying.

[0109] The metal substrate 100 is conveyed by the feeding device, and sequentially passes through unwinding, alkali washing, water washing, and air drying, and is then wound into a roll. The metal substrate 100 is adjusted by the deviation correction sensor 430 during the pretreatment process.

[0110] As can be seen from Figure 2 , the alkali washing, water washing, and air drying are each provided with upper and lower parts, and the first surface 110 and the second surface 120 are processed respectively.

[0111] In step S20, the thinning process also includes multiple processing steps, which are sequentially a thinning step, a water washing step, and an air drying step. Correspondingly, multiple processing areas are provided on the thinning device 300, which are sequentially a thinning area, a water washing area, and an air drying area along the conveying direction of the metal substrate 100.

[0112] As shown in Figure 2 , Figure 2 , the lower part of the drawing is a schematic diagram of the thinning device 300, which shows the three steps from left to right, which are thinning, water washing, and air drying.

[0113] As can be seen from Figure 2 , in addition to thinning, the water washing and air drying are each provided with upper and lower parts, and the first surface 110 and the second surface 120 are processed respectively.

[0114] In summary of all the above embodiments, the present application can use various means to adjust the etching rates of the first surface 110 and the second surface 120 of the metal substrate 100, and combine the tension sensor 420 and the deviation correction sensor 430 on the feeding device to process the thicker metal substrate raw material into a metal substrate product with a thinner first surface 110 than a second surface 120. The processed metal substrate 100 has a higher flatness or a shape with slightly downward bending on both sides.

[0115] Note that "slightly downward bending on both sides" is based on the second surface 120 being on the bottom and the first surface 110 being on the top. When the two sides (width direction) are slightly downward bending, there is a slight upward bending deformation on both sides due to internal stress release during the processing FMM or FMM evaporation process. In this way, the metal substrate 100 can be slightly deformed during the processing FMM, thereby improving the flatness of the metal substrate 100.

[0116] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. Those skilled in the art should understand that the present application includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modification that does not deviate from the functional and structural principles of the present application shall be included in the scope of the claims.

Claims

1. A method for preparing an FMM, characterized in that, include: The strip-shaped metal substrate (100) is pretreated to remove surface impurities and improve its flatness; Thinning treatment is performed on both sides of the metal substrate (100), wherein the thinning amount of the first surface (110) of the metal substrate (100) is less than the thinning amount of the second surface (120); Multiple vapor deposition holes are formed on the metal substrate (100) that penetrate the first surface (110) and the second surface (120), and the vapor deposition holes gradually expand from the first surface (110) to the second surface (120).

2. The method for preparing FMM according to claim 1, characterized in that, In the thinning process, etching solvent is sprayed onto the first surface (110) and the second surface (120) respectively to etch and thin the metal substrate (100). The amount of etching solvent sprayed onto the first surface (110) is controlled to be less than the amount of etching solvent sprayed onto the second surface (120) so that the thinning amount of the first surface (110) is less than the thinning amount of the second surface (120).

3. The method for preparing FMM according to claim 2, characterized in that, In the thinning process, the number of nozzles (330) spraying etching solvent onto the first surface (110) is less than the number of nozzles (330) spraying etching solvent onto the second surface (120). And / or, keep some nozzles (330) that spray etching solvent onto the first surface (110) closed; And / or, control the intermittent start and stop of at least a portion of the nozzles (330) that spray etching solvent onto the first surface (110).

4. The method for preparing FMM according to claim 2, characterized in that, The etching solvent sprayed onto the first surface (110) and the etching solvent sprayed onto the second surface (120) each have independent supply channels. In the thinning process, the solvent flow rate of the two supply channels is controlled so that the amount of etching solvent sprayed onto the first surface (110) is less than the amount of etching solvent sprayed onto the second surface (120).

5. The method for preparing FMM according to claim 1, characterized in that, In the thinning process, etching solvent is sprayed onto the first surface (110) and the second surface (120) respectively to etch and thin the metal substrate (100), and the spray flow rate of the etching solvent on the first surface (110) is controlled to be less than the spray flow rate of the etching solvent on the second surface (120).

6. The method for preparing FMM according to any one of claims 2 to 5, characterized in that, In the thinning process, pressure is applied to the first surface (110) toward the second surface (120), and the applied pressure is adjusted according to the change in the flatness of the metal substrate (100).

7. The method for preparing FMM according to any one of claims 1 to 5, characterized in that, In the thinning process, etching solvent is sprayed onto the first surface (110) and the second surface (120) respectively to etch and thin the metal substrate (100). The metal substrate (100) is conveyed in the horizontal direction during the thinning process, with the first surface (110) facing upward and the second surface (120) facing downward.

8. The method for preparing FMM according to claim 7, characterized in that, In the thinning process, the etching solvent spray flow rate in the edge region of the first surface (110) is controlled to be less than the etching solvent spray flow rate in the middle region; And / or, control the etching solvent spraying rate of the edge region of the first surface (110) to be less than the etching solvent spraying rate of the middle region; And / or, control the total duration of etching solvent spraying in the edge region of the first surface (110) to be less than the total duration of etching solvent spraying in the middle region.

9. The method for preparing an FMM according to any one of claims 1 to 5, wherein the difference in thinning between the first surface (110) and the second surface (120) is not less than 10% of the thickness of the metal substrate (100) after thinning, and the thinning amount of the first surface (110) is not less than 2.5 μm.

10. A material processing device, characterized in that, The equipment includes a feeding device, a pretreatment device (200), and a thinning device (300) located downstream of the pretreatment device (200). The feeding device is used to convey a strip-shaped metal substrate (100). The pretreatment device (200) is used to remove surface impurities from the metal substrate (100) and improve its flatness. The thinning device (300) is used to spray etching solvent on both sides of the metal substrate (100) to perform thinning treatment on the metal substrate (100). The material processing equipment uses the preparation method described in any one of claims 1 to 9 to process the metal substrate (100) so that the thinning amount of the first surface (110) of the metal substrate (100) is less than the thinning amount of the second surface (120).

11. The material processing equipment according to claim 10, characterized in that, The thinning device (300) includes a first spray section (310) and a second spray section (320) arranged opposite to each other. The first spray section (310) is used to spray an etching solvent onto the first surface (110), and the second spray section (320) is used to spray an etching solvent onto the second surface (120) to etch and thin the metal substrate (100). Both the first spray section (310) and the second spray section (320) include a plurality of nozzles (330). The number of nozzles (330) spraying the etching solvent onto the first surface (110) is less than the number of nozzles (330) spraying the etching solvent onto the second surface (120). And / or, control some of the nozzles (330) of the first spray section (310) to remain closed, so that the number of nozzles (330) of the first spray section (310) spraying etching solvent is less than the number of nozzles (330) of the second spray section (320) spraying etching solvent. And / or, control at least some of the nozzles (330) of the first spray section (310) to start and stop intermittently, so that the total spraying time of the first spray section (310) is less than the total spraying time of the second spray section (320).

12. The material processing equipment according to claim 10, characterized in that, The thinning device (300) includes a first spray section (310) and a second spray section (320) disposed opposite to each other. The first spray section (310) is used to spray an etching solvent onto the first surface (110), and the second spray section (320) is used to spray an etching solvent onto the second surface (120) to etch and thin the metal substrate (100). The flow rate of the etching solvent sprayed by the first spray section (310) is less than the flow rate of the etching solvent sprayed by the second spray section (320).

13. The material processing equipment according to claim 11 or 12, characterized in that, The first spray section (310) further includes a plurality of pressure rollers (340) arranged at intervals along the conveying direction of the metal substrate (100). The pressure rollers (340) apply pressure to the first surface (110) to maintain the flatness of the metal substrate (100). The pressure applied by the pressure rollers (340) is adjusted according to the change in the flatness of the metal substrate (100).

14. The material processing equipment according to claim 11 or 12, characterized in that, The first spray section (310) and the second spray section (320) are arranged vertically at intervals. The metal substrate (100) is conveyed in the horizontal direction with the first surface (110) facing upward and the second surface (120) facing downward. The multiple nozzles (330) of the first spray section (310) are divided into multiple groups of spray groups (331) arranged at intervals along the conveying direction of the metal substrate (100). Each spray group (331) includes an outer nozzle (3331) and an inner nozzle (3332). The spray area of ​​the outer nozzle (3331) covers the edge area of ​​the first surface (110), and the spray area of ​​the inner nozzle (3332) covers the middle area of ​​the first surface (110). The etching solvent spray flow rate of the outer nozzle (3331) is less than that of the inner nozzle (3332). And / or, the etching solvent spraying rate of the outer nozzle (3331) is less than the etching solvent spraying rate of the inner nozzle (3332); And / or, the outer nozzle (3331) is activated intermittently.

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