Rotating speed detection method and system

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and provides a rotating speed detection method and system, and the method comprises the steps: providing semiconductor equipment and an optical detection device; acquiring simulation track information of a model surface corresponding to the autorotation seat at different theoretical speed ratios and different angles of entering the autorotation seat; establishing a standard pulse column diagram according to the simulated trajectory information so as to obtain a theoretical corresponding relation among the theoretical column peak number, the theoretical column peak width, the theoretical speed ratio and the angle of entering the autorotation seat; actual measurement detection data are obtained through an optical detection device; obtaining an actual measurement pulse column diagram according to the actual measurement detection data; and obtaining the rotation speed of the rotation seat according to the actually measured pulse column diagram, the theoretical corresponding relation and the rotation speed of the revolution seat. According to the method, the theoretical corresponding relation is established, the detection of the rotation speed of the rotation seat is realized without depending on a driving pulse trigger signal of the revolution seat or carrying out structural modification on the equipment, and the method is suitable for the speed measurement of the rotation seat of various types of semiconductor equipment.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a rotating speed detection method and a detection system. BACKGROUND

[0002] In the manufacturing process of semiconductor and integrated circuit, special equipment is usually adopted to perform each process in the production process. These semiconductor devices are not only various in type and complex in structure, but also need to be accurately monitored in the running process to ensure the stable operation of the semiconductor device. For example, a semiconductor growth device is provided with a rotation seat and a revolution seat. The revolution seat is provided with a revolution groove for carrying the rotation seat. The bottom surface of the revolution groove is provided with a flow guide. By providing driving gas to the flow guide at the bottom surface of the revolution groove, an air cushion can be formed below the rotation seat, thereby lifting the rotation seat and making it rotate, which is beneficial to the uniform mixing of the growth source material in the area near the substrate surface and the uniformity of the temperature difference in the area near the substrate surface, so as to improve the quality and uniformity of the film formation.

[0003] In the semiconductor growth device, the gas mixing uniformity and temperature difference uniformity in the area above the substrate are directly affected by the revolution of the revolution seat and the rotation of the rotation seat, thereby affecting the film formation quality on the substrate surface. Therefore, during the semiconductor growth process, the motion state of the rotation seat and the revolution seat needs to be accurately monitored and controlled to ensure the film formation quality. However, during the film growth on the substrate surface, the rotation seat is driven to rotate by driving gas, and its motion state is affected by many factors such as revolution, pressure, gas flow field distribution, temperature field distribution, etc., which makes it difficult to detect the motion state of the rotation seat and increases the uncertainty of the motion control of the rotation seat, which is not conducive to the good film formation quality on the substrate surface.

[0004] In order to monitor the rotation state of the rotation seat, the prior art generally adopts the following two schemes. The first method calculates the rotating speed of the rotation seat by using the trigger pulse signal of the rotating drive device. This method depends on the trigger pulse signal of the rotating drive device. When the trigger pulse signal is delayed, the rotating speed detection of the rotation seat will be inaccurate. The second method relies on the structure modification of the existing semiconductor device, such as the detection hole opened at the bottom of the chamber and the bottom of the revolution seat, and the detection mark, such as the groove feature pattern, provided on the bottom surface of the rotation seat. The rotating speed of the rotation seat is determined according to the periodic change of the detection mark. However, this method complicates the structure of the semiconductor device and increases the production cost, and is not suitable for semiconductor devices that have not been structurally modified.

[0005] Therefore, there is an urgent need for a new rotating speed detection method to solve the above problems in the prior art. SUMMARY

[0006] The application aims to provide a rotating speed detection method and system, which does not rely on the driving pulse trigger signal of the revolution seat, does not need to modify the structure of the equipment, can detect the rotating speed of the rotation seat during the operation of the semiconductor equipment, and is suitable for the rotation speed detection of various types of rotation seats of semiconductor equipment.

[0007] To achieve the above-mentioned purpose, the rotating speed detection method provided by the application comprises the following steps: S1: providing a semiconductor equipment and an optical detection device, wherein the semiconductor equipment comprises a rotation seat for carrying a substrate, a revolution seat for carrying the rotation seat, a rotating device for driving the revolution seat to revolve, and a gas passage provided on the revolution seat and used for driving the rotation seat to rotate, and the optical detection device is used for emitting a detection light beam to obtain detection data of a substrate area and a substrate outer area on the surface of the revolution seat, wherein the detection data of the substrate area and the substrate outer area have differences to generate a pulse column graph; S2: obtaining simulation track information of a model surface corresponding to the rotation seat under different theoretical rotating speed ratios and different entering rotation seat angles, wherein the theoretical rotating speed ratio is the ratio of the rotating speed of the rotation seat to the rotating speed of the revolution seat; S3: establishing a standard pulse column graph according to the simulation track information, and obtaining a theoretical corresponding relationship among the theoretical column peak number, the theoretical column peak width, the theoretical rotating speed ratio, and the entering rotation seat angle; S4: placing the substrate on the rotation seat, controlling the rotating device to drive the revolution seat to revolve, providing driving gas to the gas passage to drive the rotation seat to rotate, and obtaining actual measurement detection data of the substrate area and the substrate outer area by the optical detection device; S5: obtaining an actual measurement pulse column graph according to the actual measurement detection data; S6: obtaining the rotating speed of the rotation seat according to the actual measurement pulse column graph, the theoretical corresponding relationship, and the rotating speed of the revolution seat in step S4.

[0008] Optionally, the actual measurement detection data comprises any one of reflectivity data, temperature data, or ranging data, and the standard pulse column graph and the actual measurement pulse column graph have a periodic variation trend.

[0009] Optionally, in step S2, a center O is defined as the center of the model corresponding to the rotation seat, a radial line with the center O of the model corresponding to the rotation seat as the starting point is defined as a reference line, an intersection O1 of a simulation detection point corresponding to the detection light beam and the edge of the model corresponding to the rotation seat is defined as the starting point, and an included angle between the connecting line of O and O1 and the reference line is defined as the entering rotation seat angle.

[0010] Optionally, the step of acquiring the simulation trajectory information comprises: establishing a substrate rotation model of the semiconductor device; acquiring the simulation trajectory information based on the substrate rotation model by using a template matching mathematical modeling method.

[0011] Optionally, the substrate rotation model comprises a substrate model, a rotation seat model and an orbit seat model, and the step of acquiring the simulation trajectory information by using the template matching mathematical modeling method in step S2 comprises: S21: providing and controlling a substrate region of a detection simulation point entering a surface of the orbit seat model from a set position, and keeping a relative position of the detection simulation point in the substrate rotation model unchanged; S22: controlling the rotation seat model and the orbit seat model to rotate at a set theoretical speed ratio; S23: acquiring a simulation trajectory curve of the detection simulation point formed on the rotation seat model; S24: changing a value of the theoretical speed ratio and / or a position of the detection simulation point entering the substrate region of the surface of the orbit seat model, and repeating the above steps to obtain simulation trajectory curves under different theoretical speed ratios and different entering rotation seat angles.

[0012] Optionally, the orbit seat model carries M rotation seat models arranged in a circumferential direction, and the M rotation seat models are respectively denoted as a first rotation seat model to an Mth rotation seat model, where M is a positive integer greater than 1, and the step of acquiring the simulation trajectory curve in step S23 comprises: S231: acquiring a coordinate set of the detection simulation point on the ith rotation seat model in a jth orbit period of the ith rotation seat model to obtain a corresponding simulation trajectory curve changing with time, where i is a positive integer not greater than M, j is a positive integer not greater than K, and K is a preset period number; S232: performing coordinate transformation on the simulation trajectory curve on the ith rotation seat model to obtain simulation trajectory curves of the detection simulation point on each of the rotation seat models in the jth orbit period.

[0013] Optionally, after step S232 is performed, the following step is further performed: S233: traversing the value of j, and repeatedly performing steps S231 to S232 to obtain simulation trajectory curves of the detection simulation point on each of the rotation seat models in a first orbit period to a Kth orbit period.

[0014] Optionally, the step of establishing a standard pulse columnar graph comprises: The simulated detection values corresponding to the substrate area on the surface of the self-rotating seat model in the simulated trajectory curve are set as a first standard logic value, and the simulated detection values corresponding to the substrate outer area on the self-rotating seat model are set as a second standard logic value lower than the first standard logic value, so as to generate the standard column chart.

[0015] Optionally, the measured detection data is reflectivity data, the number of substrates carried on the self-rotating seat is at least 2, there is a substrate spacing between two adjacent substrates on the same self-rotating seat, at least one column peak in the measured pulse column chart has inflection point data, after step S4 is executed, the substrate spacing and the spot diameter of the detection light beam are obtained, and it is judged that the spot diameter is greater than the substrate spacing, and step S5 further includes data processing on the measured pulse column chart.

[0016] Optionally, the measured detection data is temperature data, the number of substrates carried on the self-rotating seat is at least 2, there is a substrate spacing between two adjacent substrates on the same self-rotating seat, after step S4 is executed, the measured pulse column chart is processed by derivation to obtain a derived pulse column chart in which the peak top values are all greater than 0, when at least one column peak in the derived pulse column chart has inflection point data, the substrate spacing and the spot diameter of the detection light beam are obtained, and it is judged that the spot diameter is greater than the substrate spacing, and step S5 further includes data processing on the measured pulse column chart.

[0017] Optionally, in step S5, the step of performing data processing on the measured pulse column chart includes: judging the validity of the inflection point data to determine whether to assign the inflection point data as the peak top value of the column peak region where the inflection point data is located or to assign the inflection point data as the peak bottom value of the column peak region where the inflection point data is located to perform peak splitting on the column peak region.

[0018] Optionally, the peak top value and the peak bottom value in the column peak region where the inflection point data is located have an extreme value difference, and the step of judging the validity of the inflection point data includes: if the difference between the peak top value and the inflection point data is not more than 10% of the extreme value difference, the inflection point data is assigned as the peak top value; if the difference between the peak top value and the inflection point data is greater than 10% of the extreme value difference, the inflection point data is assigned as the peak bottom value.

[0019] Optionally, the measured pulse column chart comprises a group of pulse column peaks corresponding to each of the rotation seats in one revolution period, and the group of pulse column peaks comprises at least one column peak. In step S6, the step of obtaining the rotation speed of the rotation seat according to the measured pulse column chart, the theoretical corresponding relationship and the rotation speed of the revolution seat in step S4 comprises: S61: obtaining a column peak width data set composed of the number of column peaks in a group of pulse column peaks corresponding to the rotation seat and the width of each column peak; S62: obtaining at least one theoretical rotation speed ratio corresponding to the number of column peaks in the theoretical corresponding relationship according to the number of column peaks, and a theoretical column peak width data set corresponding to each of the theoretical rotation speed ratios; S63: comparing the difference between the column peak width data set and each of the theoretical column peak width data sets, and selecting the theoretical rotation speed ratio corresponding to the theoretical column peak width data set with the smallest difference as a target rotation speed ratio; S64: obtaining the rotation speed of the rotation seat according to the target rotation speed ratio and the rotation speed of the revolution seat in step S4.

[0020] Another aspect of the present application also provides a detection system for executing any one of the rotation speed detection methods in the above embodiments, and the detection system comprises: An optical detection device for emitting a detection beam to scan a substrate area and a substrate outer area on the surface of the revolution seat of the semiconductor device, wherein the optical detection device has a difference between the detection data obtained by scanning the substrate area and the detection data obtained by scanning the substrate outer area to generate a pulse column chart; A master control device communicatively connected to the optical detection device, and pre-storing a theoretical corresponding relationship of theoretical column peak numbers and theoretical column peak widths of each standard pulse column chart under different theoretical rotation speed ratios and different entering angles of the rotation seat.

[0021] Compared with the prior art, the rotation speed detection method and the detection system provided by the present application have at least the following beneficial effects: The motion track of the detection beam of the optical detection device in the substrate region and the substrate outer region is related to the rotation speed of the rotation seat, the rotation speed of the revolution seat and the angle of the detection beam entering the rotation seat, and the detection data of the substrate region and the substrate outer region obtained by the optical detection device has difference to generate the pulse column graph. The theoretical corresponding relationship between the theoretical column peak number, the theoretical column peak width, the theoretical speed ratio and the entering rotation seat angle is obtained through the simulation track information under different theoretical speed ratios and different entering rotation seat angles, and the corresponding standard pulse column graph, which can provide theoretical reference data for the motion state detection of the rotation seat. The whole process is simple and fast, without the need to modify the structure of the semiconductor equipment, saving the production cost, at the same time, getting rid of the dependence on the driving pulse trigger signal detection of the semiconductor equipment, avoiding the influence of signal delay, improving the stability and reliability of the whole detection process. The detection system provided in the application is used to execute the above-mentioned speed detection method, and therefore has the same beneficial effects. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0023] Figure 1 A flowchart of a speed detection method provided by the present application is shown.

[0024] Figure 2 A schematic structural diagram of a semiconductor equipment and a detection system in a speed detection method provided by the present application is shown.

[0025] Figure 3 A top view structural schematic diagram of a revolution seat in a speed detection method provided by the present application is shown.

[0026] Figure 4 A structural schematic diagram of a surface gas channel of a revolution seat in a speed detection method provided by the present application is shown.

[0027] Figure 5 A flowchart of a mathematical modeling method for obtaining simulation track information in a speed detection method provided by the present application is shown.

[0028] Figure 6 A flowchart of obtaining simulation track curves in a speed detection method provided by the present application is shown.

[0029] Figure 7Fig. 1 shows a structural schematic diagram of a simulated trajectory curve of a surface of a rotation seat at different theoretical rotation speed ratios in a rotation speed detection method provided by the present application.

[0030] Figure 8 Fig. 2 shows a flowchart of obtaining a rotation speed of a rotation seat according to a measured pulse column chart, a theoretical corresponding relationship and a rotation speed of a revolution seat in a rotation speed detection method provided by the present application.

[0031] Figure 9 Fig. 3 shows a measured pulse column chart of reflectivity in a revolution period in a rotation speed detection method provided by the present application.

[0032] Figure 10 Fig. 4 shows a structural schematic diagram of a simulated trajectory curve of a surface of a rotation seat model in a rotation speed detection method provided by the present application.

[0033] Figure 11 Fig. 5 shows a standard pulse column chart corresponding to the simulated trajectory curve shown in Fig. 4. Figure 10

[0034] Fig. 6 shows a schematic diagram of reference signs: 11, rotation seat; 12, revolution seat; 121, gas passage; 13, substrate; 21, optical detection device; 22, main control device; 31, reference line; 32, simulated trajectory curve. DETAILED DESCRIPTION

[0035] In order to make the technical purposes, technical solutions and technical effects of the present application clearer, the technical solutions of the present application will be described clearly and completely in combination with embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0036] Therefore, the detailed description of the embodiments of the present application below is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0037] ​In the description of the present application, it should be noted that the description referring to the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in connection with the implementation or example are included in at least one implementation or example of the present application. In the present description, the exemplary description of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more implementations or examples in a suitable manner.

[0038] The present application provides a rotating speed detection method for real-time monitoring the motion state of a rotation seat in a semiconductor device. With reference to Figure 1 , the rotating speed detection method comprises steps S1 to S6, specifically comprising: S1: providing a semiconductor device and an optical detection device 21, the semiconductor device comprising a rotation seat 11 for carrying a substrate, a revolution seat 12 for carrying the rotation seat 11, a rotating device for driving the revolution of the revolution seat 12, and a gas passage 121 provided on the revolution seat 12 and used for driving the rotation of the rotation seat 11, and the optical detection device 21 is used for emitting a detection light beam to obtain detection data of a substrate area on the surface of the revolution seat 12 and an area outside the substrate, the detection data between the substrate area and the area outside the substrate having a difference to generate a pulse column graph; S2: obtaining simulation trajectory information of a model surface corresponding to the rotation seat 11 at different theoretical rotation speed ratios and different entering rotation seat angles, the theoretical rotation speed ratio being the ratio of the rotation speed of the rotation seat 11 to the rotating speed of the revolution seat 12; S3: establishing a standard pulse column graph according to the simulation trajectory information, and obtaining a theoretical corresponding relationship between the theoretical column peak number, the theoretical column peak width, the theoretical rotation speed ratio and the entering rotation seat angle; S4: placing the substrate 13 on the rotation seat 11, controlling the rotating device to drive the revolution of the revolution seat 12, providing driving gas to the gas passage 121 to drive the rotation of the rotation seat 11, and obtaining the measured detection data of the substrate area and the area outside the substrate by the optical detection device 21; S5: obtaining a measured pulse column graph according to the measured detection data; S6: obtaining the rotation speed of the rotation seat according to the measured pulse column graph, the theoretical corresponding relationship and the rotating speed of the revolution seat.

[0039] In the rotation speed detection method of the embodiment, by obtaining the simulation track information under different theoretical rotation speed ratios and different entering self-rotation seat angles, and drawing the corresponding standard pulse column chart, each motion state of the substrate rotation model has a specific standard pulse column chart, so that the theoretical corresponding relationship between the theoretical column peak number and the theoretical column peak width in the standard pulse column chart and the theoretical rotation speed ratio and the entering self-rotation seat angle can be established, so that each specific theoretical rotation speed ratio and entering self-rotation seat angle has a unique corresponding theoretical column peak number and theoretical column peak width, which provides sufficient theoretical reference data for subsequent motion state detection of the self-rotation seat, and ensures that the motion state detection of the self-rotation seat can be realized; and in the method, the theoretical rotation speed ratio and the entering self-rotation seat angle are adjusted, without detecting the rotation speed of the self-rotation seat and the revolution seat one by one, so that the data operation amount in the process of obtaining the simulation track information can be significantly reduced while ensuring the subsequent motion state detection of the self-rotation seat, and the work efficiency is effectively improved.

[0040] Therefore, by using the rotation speed detection method of the application, the self-rotation speed of the self-rotation seat 11 is detected, and the method does not need to modify the structure of the semiconductor equipment, saves the production cost, and at the same time, avoids the influence of signal delay, improves the stability of the whole detection process and the reliability of the detection result, so that the method can be applied to the self-rotation speed detection of various types of semiconductor equipment.

[0041] In step S1, referring to Figure 2 and Figure 3 , the semiconductor equipment is provided with the self-rotation seat 11 and the revolution seat 12, the self-rotation seat 11 is located on the revolution seat 12, one or more self-rotation seats 11 can be arranged on the revolution seat 12, and one or more substrates 13 are placed on each self-rotation seat 11, when the semiconductor equipment works, the revolution seat 12 and the self-rotation seat 11 rotate, so that the self-rotation seat 11 rotates on the revolution seat 12 and revolves around the rotation axis of the revolution seat 12 to drive the substrate 13 to rotate.

[0042] In an optional embodiment, the semiconductor equipment can be configured to perform a preset process on the substrate 13, the preset process can be an epitaxial film growth process or other suitable process, the semiconductor equipment can be a semiconductor growth equipment, for example, a CVD (Chemical Vapor Deposition) equipment, or other suitable type of semiconductor equipment, and the semiconductor equipment has a process chamber for the preset process, and the self-rotation seat 11 and the revolution seat 12 are located in the process chamber.

[0043] In an optional embodiment, referring to Figure 3 and Figure 4The upper surface of the revolution seat 12 is provided with a plurality of revolution grooves, the bottom surface of the revolution groove is provided with a gas passage 121, the rotation seat 11 is placed in the revolution groove, and the rotation seat 11 can be lifted by providing driving gas to the gas passage 121 of the bottom surface of the revolution groove, and the rotation seat 11 can rotate, and the rotation device can drive the revolution seat 12 to revolve, and the rotation seat 11 can revolve around the rotation axis of the revolution seat 12. When the substrate 13 is subjected to a predetermined process, for example, a thin film growth process on the surface of the substrate 13, the rotation seat 11 simultaneously rotates and revolves, which can facilitate the mixing of the growth source material in the process chamber near the surface of the substrate 13, and can facilitate the uniformity of the temperature difference near the surface of the substrate 13, thereby improving the film quality of the surface of the substrate 13.

[0044] In step S1, the optical detection device 21 is used to scan the substrate area and the substrate outer area on the surface of the revolution seat 12 with the outgoing detection beam, and the detection beam intersects with the surface of the substrate 13, the rotation seat 11 and the revolution seat 12 to form a plurality of detection points, and then the actual detection data at each detection point is detected.

[0045] The optical detection device 21 can be a reflectivity measurement device, an optical temperature measurement device, an optical distance measurement device or other suitable measurement device, and the specific implementation of each is a conventional technical means in the art. The detection beam can be light of a specific wavelength range, and the detection data can include one or more of temperature data, reflectivity data, distance data and other suitable types of data.

[0046] During the scanning of the surface of the revolution seat 12 with the detection beam, there is a difference between the detection data obtained by scanning the substrate area on the surface of the revolution seat 12 and the detection data obtained by scanning the outer area on the surface of the revolution seat 12. The "difference" can be understood as a logical difference between the detection data obtained by scanning the substrate area and the detection data obtained by scanning the outer area on the surface of the revolution seat 12. For example, the reflectivity of each detection point in the substrate area is significantly higher than the reflectivity of each detection point in the substrate outer area. For example, the temperature of each detection point in the substrate area is significantly lower than the temperature of each detection point in the substrate outer area. For example, the distance of each detection point in the substrate area is significantly smaller than the distance of each detection point in the substrate outer area.

[0047] It should be noted that the above examples are only used to facilitate understanding of the scheme of the present application, and are not a limitation on the protection scope of the present application. The physical quantity detected by the optical detection device 21 can also be other physical quantities that satisfy the above difference.

[0048] In step S2, the step of obtaining the simulation trajectory information comprises: establishing a substrate rotation model of the semiconductor device; and obtaining the simulation trajectory information based on the substrate rotation model by using a template matching mathematical modeling method. The template matching mathematical modeling method is a conventional technical means.

[0049] Specifically, the established substrate rotation model has a structure size that is proportional to or reduced in proportion to the semiconductor device, and includes a substrate model that is proportional to or reduced in proportion to the substrate, a rotation seat model that is proportional to or reduced in proportion to the rotation seat, and a revolution seat model that is proportional to or reduced in proportion to the revolution seat. The substrate model, the rotation seat model, and the revolution seat model in the substrate rotation model correspond to the substrate 13, the rotation seat 11, and the revolution seat 12 in the semiconductor device, respectively. One or more rotation seat models can be arranged on the revolution seat model, and one or more substrate models can be arranged on the rotation seat model. The rotation seat model can rotate and revolve with the revolution seat model.

[0050] In this embodiment, the model corresponding to the rotation seat 11 is the rotation seat model. Referring to Figure 3 , the center O of the rotation seat model is defined as the center of the rotation seat model. The intersection point O1 of the detection simulation point corresponding to the detection beam and the starting point of the edge of the rotation seat model is detected with respect to the reference line that is any radial line starting from the center O of the rotation seat model. The included angle between the line connecting O and O1 and the reference line is the entering rotation seat angle. The detection simulation point can be understood as a detection point of the detection beam or a simulation beam or a virtual beam on the surface of the rotation seat model and the revolution seat model, which is used to simulate the detection point of the detection beam on the surface of the revolution seat 12.

[0051] In an optional embodiment, the simulation trajectory information comprises a simulation trajectory curve. Referring to Figure 5 , in step S2, the step of obtaining the simulation trajectory information by using the template matching mathematical modeling method comprises steps S21 to S24, which are described as follows.

[0052] S21: The detection simulation point is provided and controlled to enter the substrate area on the surface of the revolution seat model from the set position, and the relative position of the detection simulation point in the substrate rotation model is kept unchanged. By controlling the position of the detection simulation point entering the substrate area on the surface of the revolution seat model, the detection beam can be simulated to enter the substrate area on the surface of the revolution seat 12 at the set entering rotation seat angle. In this detection process, the relative position of the detection simulation point in the space where the substrate rotation model is located is kept unchanged, so that the relative position of the detection simulation point on the surface of the rotation seat model changes with the revolution and rotation of the rotation seat model.

[0053] S22: The rotation seat model and the revolution seat model are controlled to rotate at the set theoretical speed ratio.

[0054] S23: Obtain a simulation trajectory curve formed by the detection simulation point on the rotation seat model. As the revolution seat model and the rotation seat model continue to rotate, the relative position of the detection simulation point in the space where the substrate rotation model is located remains unchanged, so that the detection simulation point forms a simulation trajectory curve on the surface of the rotation seat model.

[0055] S24: Change the value of the theoretical speed ratio and / or the position of the detection simulation point entering the substrate area on the surface of the revolution seat model, and repeat the above steps to obtain simulation trajectory curves under different theoretical speed ratios and different entering rotation seat angles. By controlling the detection simulation point to enter the substrate area on the surface of the revolution seat model at different set positions, the detection beam is simulated to enter the substrate area at different entering rotation seat angles, and the rotation seat model and the revolution seat model are controlled to rotate at different set theoretical speed ratios, so that the rotation seat and the revolution seat are simulated to rotate at different theoretical speed ratios, and the simulation trajectory information of the detection beam on the surface of the rotation seat 11 under various motion states is obtained.

[0056] In an optional embodiment, the revolution seat model carries M rotation seat models, and the M rotation seat models are arranged along the circumference of the revolution seat model in sequence. The M rotation seat models are respectively referred to as the first to the Mth rotation seat models, and M is a positive integer greater than 1. Referring to Figure 6 In step S23, the step of obtaining the simulation trajectory curve includes steps S231 to S232, which are described as follows.

[0057] S231: In the jth revolution period of the ith rotation seat model, obtain a coordinate set of the detection simulation point on the ith rotation seat model to obtain a corresponding simulation trajectory curve varying with time; wherein i is a positive integer not greater than M, j is a positive integer not greater than K, and K is a preset period number. The value of the parameter K can be set according to actual needs, and the value of M corresponds to the number of rotation seats 11 on the revolution seat 12 in the semiconductor device.

[0058] S232: Perform coordinate transformation on the simulation trajectory curve on the ith rotation seat model to obtain a simulation trajectory curve of the detection simulation point on each rotation seat model in the jth revolution period. Due to the difference in the rotation state and position between different rotation seats 11 placed on the same revolution seat 12, the simulation trajectory graph on other rotation seat models can be obtained by using coordinate transformation, so as to reduce the data operation amount and improve the efficiency of data modeling simulation.

[0059] Further, also referring to Figure 6After the step S232 is executed, the method further comprises a step S233 of traversing the value of j and repeatedly executing the steps S231 and S232 to obtain the simulation trajectory curves of the detection simulation points on the respective rotation seat models in the first to Kth revolution periods. Through the steps S231 to S233, the simulation trajectory curves of the detection simulation points on the respective rotation seat models after K revolution periods at the current set theoretical rotation speed ratio and the entering rotation seat angle can be obtained.

[0060] With reference to Figure 7 , Figure 7 Fig. 6 shows the simulation trajectory curves of the detection light beams on the surface of the rotation seat model when the rotation speed of the revolution seat model is 1 rpm and the rotation speed ω of the rotation seat model is 0 rpm, 1 rpm, 2 rpm, 3 rpm to 17 rpm respectively, Figure 7 The abscissa and the ordinate in Fig. 6 are both dimension information with the unit of mm. Since the surface of the rotation seat model is provided with a plurality of substrate models, the simulation trajectory curves are distributed on the surface of the rotation seat model and part of them are located on the surface of the substrate model. It is found through simulation verification that each set theoretical rotation speed ratio and entering rotation seat angle corresponds to a unique simulation trajectory curve.

[0061] In the step S3, the step of establishing the standard pulse column chart according to the simulation trajectory information comprises: setting each simulation detection value in the simulation trajectory curve corresponding to the substrate region on the surface of the rotation seat model as a first standard logic value and setting each simulation detection value corresponding to the region outside the substrate on the rotation seat model as a second standard logic value to generate the standard pulse column chart; wherein the ordinate in the standard column chart is used to represent the simulation detection value of each detection simulation point, the abscissa is the simulation time, the second standard logic value is lower than the first standard logic value, and the standard pulse column chart has a periodic change trend with time.

[0062] The standard pulse column chart comprises a theoretical pulse column peak group corresponding to each rotation seat model in any revolution period, the theoretical pulse column peak group comprises at least one theoretical column peak, and for any set theoretical rotation speed ratio and entering rotation seat angle, there are a plurality of theoretical pulse column peak groups in different revolution periods. The step of obtaining the theoretical corresponding relationship in the step S3 comprises: obtaining the theoretical column peak number and the theoretical column peak width corresponding to each theoretical pulse column peak group; and establishing a mapping relationship between the theoretical column peak number and the theoretical column peak width and the corresponding theoretical rotation speed ratio and entering rotation seat angle; wherein the plurality of theoretical column peak widths in the theoretical pulse column peak group form a theoretical column peak width data group.

[0063] In step S4, the substrate 13 is placed on the revolution seat 11, the revolution device drives the revolution of the revolution seat 12, the driving gas is provided to the gas channel to drive the revolution of the revolution seat 11, the optical detection device 21 emits the detection light beam to the substrate area on the surface of the revolution seat 12, and the position of the optical detection device 21 is kept unchanged. The real-time detection data is obtained by the optical detection device 21 as the measured detection data. Then, step S5 is performed to obtain the measured pulse column chart according to the measured detection data.

[0064] In step S5, the measured pulse column chart with the periodic change trend over time is formed with the time as the horizontal coordinate and the measured detection data of each detection point as the vertical coordinate. The measured pulse column chart has a plurality of column peaks.

[0065] In an optional embodiment, the measured detection data is the reflectivity data, the number of the substrates carried on the revolution seat 11 is at least two, the adjacent two substrates on the same revolution seat 11 have a substrate spacing, at least one column peak in the pulse column chart has the inflection point data, and after the measured detection data is obtained in step S4, the method further comprises: obtaining the substrate spacing and the spot diameter of the detection light beam; and when the spot diameter is greater than the substrate spacing, the step S5 further comprises: performing data processing on the measured pulse column chart.

[0066] In an optional embodiment, the measured detection data is the temperature data, the number of the substrates carried on the revolution seat 11 is at least two, the adjacent two substrates on the same revolution seat 11 have a substrate spacing, and after the measured detection data is obtained in step S4, the method further comprises: performing derivation processing on the measured pulse column chart to obtain a derived pulse column chart, the derived pulse column chart has a plurality of column peaks; when at least one column peak in the derived pulse column chart has the inflection point data, the substrate spacing and the spot diameter of the detection light beam are obtained, and it is determined that the spot diameter is greater than the substrate spacing, the step S5 further comprises: performing data processing on the measured pulse column chart.

[0067] In the step of performing derivation processing on the measured pulse column chart, the derivation processing is performed on the measured pulse column chart and the absolute value calculation is performed to obtain the derived pulse column chart with the peak top value greater than 0.

[0068] In the embodiment, the step of performing data processing on the measured pulse column chart comprises: performing validity judgment on the inflection point data to determine whether to assign the inflection point data as the peak top value of the column peak area where the inflection point data is located or to assign the inflection point data as the peak bottom value of the column peak area where the inflection point data is located to perform peak splitting on the column peak area where the inflection point data is located.

[0069] Wherein, when the measured detection data is reflectivity data, the inflection point data is the reflectivity detection data corresponding to the inflection point in the measured pulse column chart; when the measured detection data is temperature data, the inflection point data is the temperature detection data corresponding to the inflection point in the derivative pulse column chart of the measured pulse column chart.

[0070] In an optional embodiment, the peak top value and the peak bottom value in the column peak region where the inflection point data is located have an extreme difference, and the step of performing validity judgment on the inflection point data comprises: when the difference between the peak top value and the inflection point data is not more than a preset percentage of the extreme difference, assigning the inflection point data to the peak top value; when the difference between the peak top value and the inflection point data is greater than the preset percentage of the extreme difference, assigning the inflection point data to the peak bottom value. The preset percentage can be 8%, 10%, 12% or other appropriate values, and the specific value can be set according to actual needs.

[0071] The present application finds that when the distance between the two adjacent substrates 13 on the rotation seat 11 is large, the rotation speed of the rotation seat 11 with high accuracy can be obtained by using the measured pulse column chart, the theoretical corresponding relationship and the rotation speed of the revolution seat 12; when the distance between the substrates is small, the spot diameter is larger than the substrate spacing, and the inflection point burr phenomenon easily occurs in the obtained pulse column chart, resulting in a large distortion risk of the subsequent obtained rotation speed of the rotation seat 11. By performing validity judgment on the inflection point data to determine whether the column peak region where the inflection point data is located needs to be peak separated, the accuracy of the rotation speed detection of the rotation seat 11 is improved.

[0072] In addition, due to the complex environment of the process chamber in the semiconductor equipment, the temperature has a greater impact, and the temperature data has more sharp peaks than the reflectivity data, and the pulse square wave characteristic is less significant. At this time, if the inflection point in the measured pulse column chart is directly used, it may lead to that effective temperature control cannot be achieved, that is, it is impossible to control the consistency of the temperature in each region of the process chamber. Based on the control requirements of the temperature in the field: within a certain temperature fluctuation range, the stability is required, wherein the temperature fluctuation range can be set according to the process requirements, therefore, the change trend of the derivative pulse column chart obtained by performing derivative processing on the measured pulse column chart can be used as the change trend of the temperature, and the point of sudden change of the change trend can be regarded as the inflection point.

[0073] In the present embodiment, the measured pulse column chart comprises a pulse column peak group corresponding to each rotation seat 11 in any revolution period, and the pulse column peak group comprises at least one column peak. In step S6, referring to Figure 8 , the step of obtaining the rotation speed of the rotation seat 11 according to the measured pulse column chart, the theoretical corresponding relationship and the rotation speed of the revolution seat 12 in step S4 comprises steps S61 to S65, which are described as follows.

[0074] S61: obtaining a column peak width data set composed of the number of column peaks in a pulse column peak group corresponding to the spin seat 11 and the width of each column peak; specifically, counting the number of column peaks in the corresponding pulse column peak group as the number of column peaks; obtaining the width of each column peak in the corresponding pulse column peak group as the column peak width to form the column peak width data set.

[0075] S62: obtaining at least one theoretical rotational speed ratio corresponding to the same number of column peaks in the theoretical corresponding relationship according to the number of column peaks, and the theoretical column peak width data set corresponding to each theoretical rotational speed ratio; specifically, obtaining at least one theoretical rotational speed ratio corresponding to the same number of column peaks in the theoretical corresponding relationship according to the number of column peaks, wherein at least one theoretical column peak width data set corresponding to the same theoretical rotational speed ratio, and then obtaining the corresponding theoretical column peak width data set according to the obtained several theoretical rotational speed ratios.

[0076] S63: comparing the difference between the column peak width data set and each theoretical column peak width data set, and selecting the theoretical rotational speed ratio corresponding to the theoretical column peak width data set with the smallest difference as the target rotational speed ratio. Specifically, calculating the difference between the average column peak width and each theoretical column peak width, and selecting the theoretical rotational speed ratio corresponding to the theoretical column peak width with the smallest adiabatic value as the target rotational speed ratio.

[0077] S64: obtaining the spin speed of the spin seat according to the target rotational speed ratio and the rotational speed of the revolution seat in step S4; wherein the rotational speed of the revolution seat can be obtained according to the control parameters of the rotating device.

[0078] In the rotational speed detection method of the embodiment, the rotational speed ratio of the semiconductor equipment and the entering angle of the detection beam into the spin seat are taken as variables, and the theoretical rotational speed ratio and the position of the detection simulation point entering the substrate region on the surface of the revolution seat model are taken as variables to obtain all possible trajectory patterns on the surface of the spin seat 11 to form simulation trajectory information. The whole operation process does not need to simulate and calculate the rotational speed of the spin seat 11 and the revolution seat 12 one by one, and by introducing the parameter "entering angle of the spin seat", the simulation trajectory information can provide sufficient theoretical reference data for the subsequent motion state detection of the spin seat 11, while reducing the data operation amount and improving the work efficiency. Moreover, when detecting the motion state of the spin seat 11, the column peak number and the column peak width data set can obtain the spin seat speed with high accuracy, the whole process is simple and fast, without the need to modify the structure of the semiconductor equipment, saving the production cost, at the same time, getting rid of the dependence on the detection of the driving pulse trigger signal of the semiconductor equipment, avoiding the influence of signal delay, improving the stability and reliability of the whole detection process, so that the method can be applied to the motion state detection of the spin workpiece of various types of semiconductor equipment.

[0079] Another aspect of the present application also provides a detection system for performing any of the rotational speed detection methods of the present application, referring to Figure 2 , the detection system comprises an optical detection device 21 and a master control device 22, the optical detection device 21 is arranged on the semiconductor equipment and is used to emit a detection beam to scan the substrate area and the substrate outer area on the surface of the revolving seat 12 to generate actual measurement detection data, and the detection data obtained by scanning the substrate area on the surface of the revolving seat 12 is different from the detection data obtained by scanning the substrate outer area on the surface of the revolving seat 12 to generate a pulse column chart. The master control device 22 is communicatively connected to the optical detection device 21, and different theoretical rotational speed ratios and different entering rotation seat angles are pre-stored in the master control device 22. The theoretical corresponding relationship between the theoretical column peak number and the theoretical column peak width of each standard pulse column chart. The master control device 22 can also be used to control the normal operation of the semiconductor equipment; optionally, the detection system can also include a model construction module for establishing a substrate rotation model to obtain simulation trajectory information.

[0080] In practical applications, the rotational speed detection method of the present application can accurately detect the rotation speed of the rotation seat 11 during rotation, and the revolution speed can be obtained by measuring the rotational speed of the revolving seat 12, and then the real-time motion state of the rotation seat 11 during the entire rotation process is obtained. By comparing the preset process parameters, the time point of the motion abnormality is obtained. Taking the thin film growth process as an example, when the semiconductor equipment is used for the next process, the running parameters of the semiconductor equipment at the abnormal time point can be adjusted to prevent the thin film quality problem caused by the motion abnormality of the rotation seat 11. Therefore, the rotational speed detection method and the detection system of the present application can provide good guidance for the next process to improve the processing quality of the subsequent process.

[0081] In the rotational speed detection method of the present embodiment, referring to Figure 2 , the semiconductor equipment is taken as an example of a semiconductor growth equipment for growing an epitaxial film on the surface of the substrate 13. An optical detection device 21 is arranged on the semiconductor equipment, which is a reflectivity measurement device and can emit a detection beam to the substrate area and the substrate outer area on the surface of the revolving seat 12 and receive a reflection signal of the detection beam to form detection data. The detection beam is light of a specific wavelength range, such as laser. The reflection signal can be light intensity information, for example.

[0082] After emitting the detection beam, the detection beam is incident on the epitaxial film on the surface of the substrate 13, and one reflection and one refraction occur at the medium / epitaxial film interface. The once-refracted light continues to undergo secondary reflection at the substrate / epitaxial film interface. After the epitaxial film starts to grow, the reflectivity and the refractivity will change with the increase of the optical thickness of the epitaxial film.

[0083] In Figure 2Taking the semiconductor device shown as an example, the orbital seat 12 is provided with five rotating seats 11 arranged in sequence around its axis in the circumferential direction. Each rotating seat 11 is provided with three substrates 13 arranged in sequence around its axis in the circumferential direction. The optical detection device 21 emits a detection beam to the substrate area on the surface of the rotating seat 11 and receives the corresponding reflected signal. The voltage signal information is obtained by performing conventional data processing on the reflected signal.

[0084] Figure 9 The curve showing the change in reflectance over time is presented, with the vertical axis representing relative intensity to characterize reflectance and the horizontal axis representing relative time to characterize time. Figure 9 It is evident that during the manufacturing process, although the exposed surfaces of the spinner 11 and orbiter 12 are also covered with a thin film, their compositional materials differ from those of the substrate 13. Considering heat transfer and mechanical properties, their light absorption is far superior to that of the epitaxial film, and their reflectivity is significantly weaker. Therefore, the detection data obtained by scanning the substrate area using reflectivity testing shows a significant difference between the data obtained by scanning the area outside the substrate.

[0085] In step S3 of this embodiment, the step of establishing a standard bar chart involves a first standard logic value and a second standard logic value having opposite logical high-low relationships. Specifically, the first standard logic value is logical high and the second standard logic value is logical low. For example, the first standard logic value is 1 and the second standard logic value is 0.

[0086] In the rotational speed detection method of this embodiment, taking a self-rotating seat model as an example, in a specific embodiment, in the mathematical modeling method using template matching, the rotational speed of the self-rotating seat model is assigned a value of 6 rpm, and the rotational speed of the orbital seat model is assigned a value of 1 rpm. The resulting simulated trajectory curve 32 in the self-rotating seat model is shown below. Figure 10 The red curve indicates that the detection simulation point enters the spinner model from point O1. A vertical radial line, defined as baseline 31, is taken as the starting point from the center O of the spinner model. The entry angle is the angle between baseline 31 and the line connecting baseline 31 and OO1. The simulated detection values ​​of the simulated trajectory curves in the region where the substrate model is located on the spinner model are assigned logic high, and the values ​​in other regions are assigned logic low. This yields the standard pulse histogram corresponding to the simulated trajectory information of the spinner model, as shown below. Figure 11 As shown, the standard pulse histogram shows that the number of standard peaks is 4 and the width of each standard peak is as follows: Figure 11The numbers marked on each column peak are 16, 46, 46 and 17 respectively. The way to obtain the simulation trajectory curve on the other revolution seat model is as follows: according to the relative positions between each substrate model on the other revolution seat model and each substrate model on the revolution seat model, combined with the revolution speed of the revolution seat model and the revolution speed of the revolution seat model, the coordinate transformation is obtained, and the specific implementation manner is conventional in the art.

[0087] In one specific embodiment, in the obtained measured pulse column chart, for example Figure 9 The number of column peaks in the pulse column peak group corresponding to the fourth block area from the left of the revolution seat is 5, and the column peak widths from left to right are 21, 22, 26, 29 and 27 in turn, which form a column peak width data group. In the theoretical corresponding relationship, each theoretical revolution speed ratio and each entering revolution seat angle correspond to a theoretical column peak number and a theoretical column peak width data group composed of the theoretical column peak widths corresponding to each theoretical column peak. Among them, in a theoretical column peak width data group with a theoretical column peak number of 5, the theoretical column peak widths are 24, 27, 29, 28 and 25 respectively, and the ratio of the theoretical revolution speed to the revolution speed is 10:1. Therefore, according to the ratio of the theoretical revolution speed to the revolution speed and the revolution speed in step S4, the revolution speed can be obtained.

[0088] Due to the difference in the entering revolution seat angle, there may be the same theoretical column peak number corresponding to different ratios of the theoretical revolution speed to the revolution speed. In this case, the measured column peak width data group and the different theoretical column peak width data groups under each ratio of the theoretical revolution speed to the revolution speed are compared respectively, and the ratio of the theoretical revolution speed to the revolution speed corresponding to the theoretical column peak width data group with the smallest difference is selected as the basis for calculating the revolution speed of the revolution seat.

[0089] In one specific embodiment, for example Figure 9The number of the column peaks in the group of the column peaks corresponding to the self-rotation seat of the fourth block area from left is 5, and the widths of the column peaks from left to right are 21, 22, 26, 29 and 27. In the theoretical corresponding relationship, in the group of the theoretical column peak widths corresponding to the number of the theoretical column peaks being 5, the widths of the theoretical column peaks are 24, 27, 29, 28 and 25 respectively, and the ratio of the theoretical self-rotation speed to the revolution speed is 10:1; and in another group of the theoretical column peak widths corresponding to the number of the theoretical column peaks being 5, the widths of the theoretical column peaks are 9, 28, 11, 44 and 7 respectively, and the ratio of the theoretical self-rotation speed to the revolution speed is 8:1. Obviously, the difference between the group of the widths of the theoretical column peaks being 24, 27, 29, 28 and 25 and the widths of the measured column peaks is smaller than that between 9, 28, 11, 44 and 7, and therefore, the self-rotation speed can be obtained according to the ratio of the theoretical self-rotation speed to the revolution speed being 10:1 and the revolution speed in step S4.

[0090] The above embodiments only illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify, change or combine the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical thought of the present application should be covered by the claims of the present application.

Claims

1. A method for detecting rotational speed, characterized in that, include: S1: Provide a semiconductor device and an optical detection apparatus, wherein the semiconductor device includes a spin seat for supporting a substrate, a revolving seat for supporting the spin seat, a rotating device for driving the revolving seat to revolve, and a gas channel disposed on the revolving seat and used to drive the spin seat to rotate; the optical detection apparatus is used to emit a detection beam to obtain detection data of a substrate area and an outer area on the surface of the revolving seat, wherein there is a difference between the detection data of the substrate area and the outer area to generate a pulse histogram; S2: Obtain the simulated trajectory information of the model surface corresponding to the rotator under different theoretical speed ratios and different entry angles of the rotator, wherein the theoretical speed ratio is the ratio of the rotation speed of the rotator to the rotation speed of the orbital seat; S3: Establish a standard pulse histogram based on the simulated trajectory information to obtain the theoretical correspondence between the theoretical number of peaks, the theoretical peak width, the theoretical rotational speed ratio, and the angle of entry into the spindle. S4: Place the substrate on the rotating seat, control the rotating device to drive the orbital seat to revolve, provide driving gas to the gas channel to drive the rotating seat to rotate, and obtain measured detection data of the substrate area and the area outside the substrate through the optical detection device; S5: Obtain a measured pulse histogram based on the measured detection data; S6: The rotation speed of the self-rotating seat is obtained based on the measured pulse histogram, the theoretical correspondence, and the rotational speed of the orbital seat in step S4.

2. The rotational speed detection method according to claim 1, characterized in that, The measured data includes any one of reflectivity data, temperature data, or distance measurement data, and the standard pulse histogram and the measured pulse histogram show a periodic variation trend.

3. The rotational speed detection method according to claim 1, characterized in that, In step S2, center O is defined as the center of the model corresponding to the spinner. A radial line with center O of the model corresponding to the spinner as the starting point is used as the reference line. The starting intersection point of the detection simulation point corresponding to the detection beam and the edge of the model corresponding to the spinner is O1. The angle between the line connecting O and O1 and the reference line is the angle of entering the spinner.

4. The rotational speed detection method according to claim 1, characterized in that, Step S2, the step of obtaining the simulated trajectory information includes: Establish a substrate rotation model for the semiconductor device; Based on the substrate rotation model, the simulated trajectory information is obtained using a template matching mathematical modeling method.

5. The rotational speed detection method according to claim 4, characterized in that, The substrate rotation model includes a substrate model, a self-rotating model, and a revolution-oriented model. Step S2, which involves using a template-matching mathematical modeling method to obtain the simulated trajectory information, includes: S21: Provide and control the detection simulation point to enter the substrate area on the surface of the orbital seat model from a set position, and keep the relative position of the detection simulation point in the substrate rotation model unchanged; S22: Control the self-rotating model and the orbiting model to rotate at a set theoretical speed ratio; S23: Obtain the simulated trajectory curve formed by the detection simulation point on the self-rotating model; S24: Change the value of the theoretical speed ratio and / or the position of the detection simulation point entering the substrate area of ​​the orbital model surface, and repeat the above steps to obtain the simulation trajectory curves under different theoretical speed ratios and different entry angles of the orbital model.

6. The rotational speed detection method according to claim 5, characterized in that, The orbital model carries M circumferentially arranged self-rotating models, denoted as the 1st to the Mth self-rotating models, where M is a positive integer greater than 1. Step S23, the step of obtaining the simulated trajectory curve, includes: S231: During the j-th revolution period of the i-th rotational model, obtain the coordinate set of the detection simulation point on the i-th rotational model to obtain the corresponding simulation trajectory curve that changes with time; where i is a positive integer not exceeding M, j is a positive integer not exceeding K, and K is a preset number of periods. S232: Perform coordinate transformation on the simulated trajectory curve on the i-th rotating seat model to obtain the simulated trajectory curve of the detection simulation point on each of the rotating seat models during the j-th revolution period.

7. The rotational speed detection method according to claim 5, characterized in that, After step S232 is completed, the following steps are also performed: S233: Iterate through the values ​​of j and repeat steps S231 to S232 to obtain the simulated trajectory curves of the detection simulation point on each of the self-rotating models during the first to the Kth revolution periods.

8. The rotational speed detection method according to claim 5, characterized in that, The steps to create a standard pulse histogram include: The simulated detection values ​​corresponding to the substrate area on the surface of the self-rotating model in the simulated trajectory curve are set as first standard logic values, and the simulated detection values ​​corresponding to the outer substrate area on the self-rotating model are set as second standard logic values ​​lower than the first standard logic values, so as to generate the standard bar chart.

9. The rotational speed detection method according to claim 1, characterized in that, The measured detection data is reflectivity data. The number of substrates carried on the spinner is at least 2. There is a substrate spacing between two adjacent substrates on the same spinner. At least one bar peak in the measured pulse histogram has inflection point data. After step S4 is completed, the substrate spacing and the spot diameter of the detection beam are obtained, and it is determined that the spot diameter is greater than the substrate spacing. Step S5 also includes data processing of the measured pulse histogram.

10. The rotational speed detection method according to claim 1, characterized in that, The measured detection data is temperature data. The number of substrates carried on the rotating seat is at least 2. There is a substrate spacing between two adjacent substrates on the same rotating seat. After step S4 is completed, the measured pulse histogram is differentiated to obtain a differentiated pulse histogram with peak values ​​all greater than 0. When at least one peak of the differentiated pulse histogram has inflection point data, the substrate spacing and the spot diameter of the detection beam are obtained, and it is determined that the spot diameter is greater than the substrate spacing. Step S5 also includes data processing of the measured pulse histogram.

11. The rotational speed detection method according to claim 9 or 10, characterized in that, Step S5, the step of performing data processing on the measured pulse histogram, includes: The validity of the inflection point data is determined to decide whether to assign the inflection point data as the peak value of the columnar peak region or to assign the inflection point data as the bottom value of the columnar peak region to divide the columnar peak region into peaks.

12. The rotational speed detection method according to claim 11, characterized in that, The peak value and the peak value in the bar-shaped peak region where the inflection point data is located have an extreme value difference. The steps for determining the validity of the inflection point data include: If the difference between the peak value and the inflection point data does not exceed 10% of the extreme value difference, then the inflection point data is assigned the peak value. If the difference between the peak value and the inflection point data is greater than 10% of the extreme value difference, then the inflection point data is assigned the peak bottom value.

13. The rotational speed detection method according to claim 1, characterized in that, The measured pulse histogram includes pulse histogram peak groups corresponding to each of the rotating seats under one revolution period. Each pulse histogram peak group includes at least one histogram peak. In step S6, the step of obtaining the rotation speed of the rotating seat based on the measured pulse histogram, the theoretical correspondence, and the rotation speed of the revolution seat in step S4 includes: S61: Obtain the number of columnar peaks in the pulse columnar peak group corresponding to the self-rotating seat, and the columnar peak width data group composed of the widths of each columnar peak; S62: Based on the number of columnar peaks in the theoretical correspondence, obtain at least one theoretical speed ratio corresponding to the same number of columnar peaks, and a theoretical columnar peak width data group corresponding to each theoretical speed ratio; S63: Compare the differences between the column peak width data group and each of the theoretical column peak width data groups, and select the theoretical speed ratio corresponding to the theoretical column peak width data group with the smallest difference as the target speed ratio; S64: The rotational speed of the oscillator is obtained based on the target rotational speed ratio and the rotational speed of the orbital seat in step S4.

14. A detection system, characterized in that, For performing the rotational speed detection method according to any one of claims 1 to 13, the detection system comprises: An optical inspection device is used to emit a detection beam to scan the substrate area and the area outside the substrate on the surface of the orbital mount of a semiconductor device. The detection data obtained by the optical inspection device from scanning the substrate area and the detection data obtained from scanning the area outside the substrate have differences to generate a pulse histogram. The communication is connected to the main control device of the optical detection device, which has pre-stored the theoretical correspondence between the number of theoretical peaks and the theoretical peak width of each standard pulse histogram under different theoretical rotation speed ratios and different entry angles of the spindle.

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