High-precision grinding wheel thinning device for semiconductor silicon carbide

By designing a high-precision grinding wheel thinning device, the problem of fixing the position of the cooling spray head was solved, achieving uniform coverage and precise control of the coolant, improving the processing quality and safety of silicon carbide workpieces, and ensuring high efficiency and stability in processing.

CN121491871APending Publication Date: 2026-02-10SUZHOU CHAOSHI INTELLIGENT MANUFACTURING SEMICONDUCTOR TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202610016507.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-07
Publication Date
2026-02-10

AI Technical Summary

Technical Problem

In existing high-precision grinding wheel thinning devices for semiconductor silicon carbide, the cooling spray head is fixed in position, resulting in insufficient local cooling in the cutting area, accumulation of cutting heat, and affecting thickness uniformity and thermal deformation of silicon carbide workpieces.

Method used

A high-precision grinding wheel thinning device was designed, comprising a grinding spindle, a liquid equalization structure, a cooling spray structure, a vacuum adsorption structure, a liquid level control structure, a coolant recovery structure, and a magnetic cleaning structure. By uniformly spraying coolant, accurately controlling the liquid level, and efficiently recovering the coolant, combined with the outer-to-inner thinning method of the diamond grinding wheel, the device achieves adaptive adjustment of the coolant and chip management.

Benefits of technology

It achieves uniform coverage and precise control of coolant, avoiding cracks or performance damage in silicon carbide due to high temperature, improving grinding quality and processing safety, reducing coolant waste and debris accumulation, and increasing processing yield and efficiency.

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Abstract

The invention relates to the technical field of semiconductor manufacturing equipment, and discloses a high-precision grinding wheel thinning device for semiconductor silicon carbide. Comprising a main shaft mounting base, a grinding main shaft, a grinding wheel, a cooling spraying structure, a liquid homogenizing structure, an outer protective cover, a grinding table, a vacuum adsorption structure, an auxiliary table, a liquid level height control structure, a cooling liquid recycling structure, a magnetic cleaning structure and a stirring driving structure. The liquid level height control structure rotates and stirs cooling liquid on the grinding table, so that a height difference is formed between the center and the outer side of the cooling liquid, and then the redundant cooling liquid submerges the liquid level height control structure and enters the cooling liquid recovery structure; through cooperation of the liquid homogenizing structure and the cooling spraying structure, it is ensured that cooling liquid uniformly covers the grinding area, the grinding temperature is effectively controlled, and cracks or performance damage caused by high temperature of silicon carbide is avoided.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and in particular to a high-precision grinding wheel thinning device for semiconductor silicon carbide. Background Technology

[0002] Silicon carbide, as a core material for third-generation semiconductors, has outstanding advantages such as high temperature resistance, corrosion resistance, low coefficient of thermal expansion, high specific stiffness, and excellent conductivity. In the manufacturing process of silicon carbide devices, the thinning of the substrate and the device is one of the core processes, and its processing accuracy directly determines the electrical performance, reliability, and service life of the device.

[0003] Currently, the industry is gradually adopting laser-assisted technology and high-precision air spindle technology for thinning silicon carbide substrates and devices. However, during the thinning process, the cooling spray head of the existing high-precision grinding wheel thinning device for semiconductor silicon carbide is fixed in position and not adapted to the grinding wheel cutting trajectory. The cutting fluid spray pressure and flow rate are also fixed, and the cooling intensity cannot be dynamically adjusted according to the cutting load. Therefore, insufficient local cooling in the cutting area is likely to occur, and the accumulation of cutting heat will cause thermal deformation of the silicon carbide workpiece, affecting the thickness uniformity. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of existing technologies, such as insufficient cooling in the cutting area due to the fixed position of the cooling spray head, which leads to thermal deformation of the silicon carbide workpiece and affects the thickness uniformity. Therefore, this invention proposes a high-precision grinding wheel thinning device for semiconductor silicon carbide.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: A high-precision grinding wheel thinning device for semiconductor silicon carbide includes: a spindle mounting base, a grinding spindle, a grinding wheel, a cooling spray structure, a liquid equalization structure, an outer protective cover, a grinding table, a vacuum adsorption structure, an auxiliary table, a liquid level control structure, a coolant recovery structure, a magnetic cleaning structure, and a stirring drive structure. When the grinding spindle rotates, the liquid distribution structure rotates along with it, spreading the coolant evenly and spraying it onto the grinding wheel. The vacuum adsorption structure, auxiliary stage, liquid level control structure and coolant recovery structure are arranged sequentially from the inside to the outside on the grinding stage; The liquid level control structure creates a height difference between the center and the outer side of the coolant by rotating and stirring the coolant on the grinding table, thereby allowing excess coolant to overflow the liquid level control structure and enter the coolant recovery structure. The coolant recovery structure is equipped with an annular baffle on the outside and a filter screen inside it; The magnetic cleaning structure is located inside the coolant recovery structure and is used to clean the filter screen; The stirring drive structure is located in the grinding table and is used to drive the liquid level control structure and the magnetic cleaning structure.

[0006] As a further embodiment of the present invention, the grinding spindle is mounted on the spindle mounting base and driven by the spindle mounting base, the grinding wheel is mounted on the grinding wheel frame at the output end of the grinding spindle, the liquid equalization structure includes a liquid equalization hood and a connecting frame, the liquid equalization hood is fixedly mounted on the grinding spindle through the connecting frame, the cooling spray structure is mounted on the spindle mounting base with its spray head facing the inner wall of the liquid equalization hood, and the outer protective cover is mounted on the spindle mounting base and is located outside the grinding wheel.

[0007] As a further embodiment of the present invention, both the grinding wheel holder and the grinding wheel are provided with flow holes for the flow of coolant, and the positions of the flow holes on both are corresponding.

[0008] As a further aspect of the present invention, the inner wall of the liquid equalization hood is provided with a liquid collection tank and a plurality of guide tanks from top to bottom. When the liquid equalization hood rotates, the coolant flows into the plurality of guide tanks in sequence through the liquid collection tank.

[0009] As a further embodiment of the present invention, the bottom of the outer cover is lower than the top of the grinding wheel to block the coolant splashing from the top of the grinding wheel. The bottom of the outer cover is provided with a guide ring facing the bottom of the grinding wheel to guide the coolant to flow to the bottom of the grinding wheel.

[0010] As a further embodiment of the present invention, the area of ​​the vacuum adsorption zone at the top of the vacuum adsorption structure is smaller than the area of ​​the silicon carbide wafer, and a sealing ring is provided on the auxiliary stage to cooperate with the vacuum adsorption structure to adsorb the silicon carbide wafer.

[0011] As a further embodiment of the present invention, the liquid level control structure is composed of multiple high bumps and multiple low bumps arranged alternately to form a stirring blade-like structure, with both the high bumps being lower on the inside and higher on the outside.

[0012] As a further embodiment of the present invention, the magnetic cleaning structure is composed of multiple inner magnetic plates with opposite magnetic directions spliced ​​together. Each inner magnetic plate has a flexible vertical plate at its top. When the magnetic cleaning structure rotates inside the coolant recovery structure, the flexible vertical plate stirs the coolant and cleans the filter screen at the same time.

[0013] As a further embodiment of the present invention, the stirring drive structure includes an outer magnetic ring, a connecting toothed ring, a connecting gear, and a stirring drive motor. The outer magnetic ring is composed of multiple outer magnetic plates with opposite magnetic directions and corresponds to the magnetic cleaning structure. The connecting toothed ring is located inside the outer magnetic ring and is fixedly connected to the liquid level control structure. The connecting gear is located inside the connecting toothed ring and meshes with it. The output end of the stirring drive motor is fixedly connected to the connecting gear.

[0014] As a further embodiment of the present invention, the grinding spindle is an air spindle, the grinding wheel is a diamond grinding wheel, and the grinding spindle drives the grinding wheel to thin the silicon carbide wafer from the outside to the inside.

[0015] Compared with the prior art, the beneficial effects of the present invention are: In this application, the combination of the liquid distribution structure and the cooling spray structure ensures that the coolant evenly covers the grinding area, effectively controls the grinding temperature, and avoids cracks or performance damage to silicon carbide due to high temperature. The speed at which the liquid distribution structure spreads the coolant follows the rotation speed of the grinding spindle. That is, the faster the grinding wheel rotates (the faster the grinding wheel temperature rises), the faster the liquid distribution structure spreads the coolant (the faster the coolant cools down), thereby achieving adaptive adjustment of the coolant cooling rate. In this application, the linkage between the liquid level control structure and the coolant recovery structure enables precise liquid level control and efficient recovery of coolant, reducing coolant waste. Combined with the thinning method from the outside to the inside, it prevents debris in the coolant from flowing into the unthinned area, reducing the accumulation of debris in the grinding area, avoiding scratches on the machined surface by debris, and further improving grinding quality and processing safety. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the overall structure of a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention. Figure 2 This is a schematic diagram of a grinding wheel for a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention; Figure 3 This is a schematic diagram of the liquid equalization structure position of a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention. Figure 4 This is a schematic cross-sectional view of the liquid homogenization structure of a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention. Figure 5 This is a schematic diagram of a grinding table for a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention; Figure 6 This is a schematic diagram showing the position of the stirring drive structure of a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention. Figure 7 This is a schematic diagram of the magnetic cleaning structure of a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention; Figure 8 This is a schematic diagram showing the positional relationship between the outer magnetic ring and the inner magnetic plate of a high-precision grinding wheel thinning device for semiconductor silicon carbide proposed in this invention.

[0017] In the diagram: 10. Spindle mounting base; 20. Grinding spindle; 21. Grinding wheel holder; 30. Grinding wheel; 31. Flow hole; 40. Cooling spray structure; 50. Liquid distribution structure; 51. Liquid distribution cover; 52. Connecting frame; 53. Liquid collection tank; 54. Guide groove; 60. Outer protective cover; 61. Guide ring; 70. Grinding table; 80. Vacuum adsorption structure; 90. Auxiliary table; 91. Sealing ring; 100. Liquid level control structure; 101. High bump; 102. Low bump; 110. Coolant recovery structure; 111. Ring baffle; 112. Filter screen; 120. Magnetic cleaning structure; 121. Inner magnetic plate; 122. Flexible vertical plate; 130. Stirring drive structure; 131. Outer magnetic ring; 132. Connecting gear ring; 133. Connecting gear; 134. Stirring drive motor. Detailed Implementation

[0018] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0019] like Figure 1 As shown, a high-precision grinding wheel thinning device for semiconductor silicon carbide includes: a spindle mounting base 10, a grinding spindle 20, a grinding wheel 30, a cooling spray structure 40, a liquid equalization structure 50, an outer protective cover 60, a grinding table 70, a vacuum adsorption structure 80, an auxiliary table 90, a liquid level control structure 100, a coolant recovery structure 110, a magnetic cleaning structure 120, and a stirring drive structure 130. When the grinding spindle 20 rotates, the liquid distribution structure 50 rotates along with it, spreading the coolant evenly and spraying it onto the grinding wheel 30. Vacuum adsorption structure 80, auxiliary stage 90, liquid level control structure 100 and coolant recovery structure 110 are arranged sequentially from the inside to the outside on grinding table 70. The liquid level control structure 100 rotates and stirs the coolant on the grinding table 70 to create a height difference between the center and the outer side of the coolant, thereby allowing excess coolant to submerge the liquid level control structure 100 and enter the coolant recovery structure 110. The coolant recovery structure 110 is provided with an annular baffle 111 on its outer side and a filter screen 112 inside it. The magnetic cleaning structure 120 is located inside the coolant recovery structure 110 and is used to clean the filter screen 112. The stirring drive structure 130 is disposed in the grinding table 70 and is used to drive the liquid level control structure 100 and the magnetic cleaning structure 120.

[0020] like Figure 2 and Figure 3As shown, the grinding spindle 20 is mounted on the spindle mounting base 10 and driven by the spindle mounting base 10. The grinding wheel 30 is mounted on the grinding wheel frame 21 at the output end of the grinding spindle 20. The liquid distribution structure 50 includes a liquid distribution cover 51 and a connecting frame 52. The liquid distribution cover 51 is fixedly mounted on the grinding spindle 20 through the connecting frame 52. The cooling spray structure 40 is mounted on the spindle mounting base 10, and its spray head faces the inner wall of the liquid distribution cover 51. The outer protective cover 60 is mounted on the spindle mounting base 10 and is located outside the grinding wheel 30. The liquid distribution structure 50 is fixed to the grinding spindle 20 via the connecting bracket 52, enabling synchronous rotation of the liquid distribution structure 50 and the grinding spindle 20. This eliminates the need for additional drive components, simplifying the structural design and reducing the equipment failure rate. The cooling spray structure 40 sprays coolant towards the inner wall of the liquid distribution cover 51. The coolant first adheres to the inner wall of the liquid distribution cover 51 and is then flung towards the grinding wheel 30 as the liquid distribution cover 51 rotates. Compared to direct spraying, this results in a more uniform distribution of coolant, avoiding situations where there is too much or too little coolant in certain areas. The outer protective cover 60 is located outside the grinding wheel 30, effectively blocking debris and splashed coolant generated during grinding. This prevents debris from contaminating the processing environment and damaging other parts of the equipment, while also preventing coolant from splashing and wasting it, thus improving the cleanliness of the processing environment and the safety of the equipment.

[0021] like Figure 4 As shown, both the grinding wheel holder 21 and the grinding wheel 30 are provided with flow holes 31 for the flow of coolant, and the positions of the flow holes 31 on both are corresponding. The flow holes 31 corresponding to the grinding wheel 21 and the grinding wheel 30 form an internal flow channel for the coolant. During grinding, the coolant not only covers the surface of the grinding wheel 30 from the outside, but also enters the interior of the grinding wheel 30 through the flow holes 31 and then penetrates to the grinding contact surface, achieving double-sided cooling of the grinding area. This synergistic internal and external cooling method can more efficiently remove the heat generated during grinding, further reducing the grinding temperature and minimizing deformation and cracks in the silicon carbide wafer caused by thermal stress. At the same time, the flow of coolant in the flow holes 31 can also lubricate the connection between the grinding wheel 21 and the grinding wheel 30, reducing frictional wear between components and extending their service life. In addition, the flow of coolant in the flow holes 31 can also remove fine debris adhering to the interior, preventing debris accumulation from affecting coolant flow and grinding accuracy.

[0022] like Figure 4 As shown, the inner wall of the liquid distribution cover 51 is provided with a liquid collection tank 53 and multiple guide tanks 54 from top to bottom. When the liquid distribution cover 51 rotates, the coolant flows into the multiple guide tanks 54 through the liquid collection tank 53. The liquid collection groove 53 on the inner wall of the liquid distribution cover 51 can collect the coolant sprayed from the cooling spray structure 40, preventing the coolant from sliding directly down the inner wall of the liquid distribution cover 51 and causing uneven distribution. The multiple guide grooves 54 can evenly distribute the coolant in the collection groove 53, allowing the coolant to flow smoothly along the guide grooves 54 and finally be evenly sprayed onto different areas of the grinding wheel 30. This structure combining collection and distribution further improves the uniformity of coolant distribution, ensuring that the entire grinding surface of the grinding wheel 30 is fully and evenly cooled and lubricated, effectively improving the consistency of grinding quality. At the same time, the guide grooves 54 can also guide the coolant, controlling the flow speed and spray direction of the coolant (achieved by adjusting the speed of the grinding spindle 20), so that the coolant can act precisely on the grinding contact surface, reducing the ineffective consumption of coolant and improving cooling efficiency.

[0023] like Figure 2 As shown, the bottom of the outer cover 60 is lower than the top of the grinding wheel 30 to block the coolant splashing from the top of the grinding wheel 30. The bottom of the outer cover 60 is provided with a guide ring 61 facing the bottom of the grinding wheel 30 to guide the coolant to flow to the bottom of the grinding wheel 30. The bottom of the outer protective cover 60 is lower than the top of the grinding wheel 30, which can completely block the coolant splashed from the top of the grinding wheel 30 when it rotates at high speed, further improving the splash protection effect and preventing coolant from splashing onto other precision parts of the equipment or the machining environment. The guide ring 61 at the bottom faces the bottom of the grinding wheel 30, which can concentrate and guide the coolant adhering to the inner wall of the outer protective cover 60, so that the coolant flows precisely to... The grinding area at the bottom of the grinding wheel 30 allows for the secondary use of coolant, improving its utilization rate. Simultaneously, the guided coolant can provide targeted cooling and lubrication to the contact area between the bottom of the grinding wheel 30 and the silicon carbide wafer, further optimizing the cooling effect, reducing frictional resistance during grinding, and improving the smoothness and precision of grinding. In addition, the guide ring 61 can reduce the disorderly flow of coolant inside the equipment, facilitating subsequent coolant recovery.

[0024] like Figure 5 As shown, the area of ​​the vacuum adsorption zone at the top of the vacuum adsorption structure 80 is smaller than the area of ​​the silicon carbide wafer. A sealing ring 91 is provided on the auxiliary stage 90 to cooperate with the vacuum adsorption structure 80 to adsorb the silicon carbide wafer. The sealing ring 91 on the auxiliary stage 90 cooperates with the vacuum adsorption structure 80 to enhance the sealing of the vacuum adsorption area, reduce vacuum leakage, and ensure that the vacuum adsorption structure 80 can generate sufficient adsorption force to firmly fix the silicon carbide wafer, preventing the silicon carbide wafer from shifting or shaking during processing and ensuring grinding accuracy.

[0025] like Figure 5 and Figure 7As shown, the liquid level control structure 100 is composed of multiple high bumps 101 and multiple low bumps 102 arranged alternately to form a stirring blade-like structure. Both the high bumps 101 and the low bumps 102 are lower on the inside and higher on the outside. The low bumps 102 can be set as a telescopic structure, which can retract when necessary, so that the coolant can flow more easily into the coolant recovery structure 110. The alternating high and low bumps 102 create a stirring-like structure that evenly agitates the coolant on the grinding table 70 during rotation, preventing localized coolant stagnation. Both the high and low bumps 102 employ an inner-low, outer-high design, driving the coolant outwards during rotation and creating a stable height difference between the center and outer edges. This ensures excess coolant smoothly flows over the liquid level control structure into the coolant recovery structure 110, achieving precise and stable coolant level control. This design guarantees sufficient coolant for lubrication in the grinding area while preventing excessive coolant buildup on the grinding table 70, which could hinder silicon carbide wafer thinning. Furthermore, the agitation action moves coolant from the center outwards, preventing debris from flowing into un-thinned areas and ensuring even dispersion of debris for subsequent magnetic cleaning by the magnetic cleaning structure 120 and filter screen, thus improving coolant efficiency. Recycling effect.

[0026] like Figure 7 and Figure 8 As shown, the magnetic cleaning structure 120 is composed of multiple inner magnetic plates 121 with opposite magnetic directions. Each inner magnetic plate 121 has a flexible vertical plate 122 at its top. When the magnetic cleaning structure 120 rotates inside the coolant recovery structure 110, the flexible vertical plate 122 stirs the coolant and cleans the filter screen 112 at the same time. When the magnetic cleaning structure 120 rotates, the flexible vertical plate 122 at the top of the inner magnetic plate 121 can agitate the coolant, allowing debris in the coolant to be fully exposed to the magnetic field, thus improving adsorption efficiency. On the other hand, when the flexible vertical plate comes into contact with the filter screen, it can effectively remove debris attached to the filter screen, prevent the filter screen from clogging, ensure the smoothness of the coolant recovery channel, and at the same time, the flexible material will not damage the filter screen, extend the service life of the filter screen, and reduce equipment maintenance costs.

[0027] like Figure 6 and Figure 8As shown, the stirring drive structure 130 includes an outer magnetic ring 131, a connecting gear ring 132, a connecting gear 133, and a stirring drive motor 134. The outer magnetic ring 131 is composed of multiple outer magnetic plates with opposite magnetic directions and corresponds to the magnetic cleaning structure 120. The connecting gear ring 132 is located inside the outer magnetic ring 131 and is fixedly connected to the liquid level control structure 100. The connecting gear 133 is located inside the connecting gear ring 132 and meshes with the connecting gear ring 132. The output end of the stirring drive motor 134 is fixedly connected to the connecting gear 133. The stirring drive structure 130 employs a combination of magnetic coupling and wheel transmission. The outer magnetic ring 131 and the magnetic cleaning structure 120 achieve non-contact transmission through the magnetic field, eliminating the need for sealing holes, thus improving the equipment's sealing performance and preventing coolant leakage. The meshing transmission between the connecting ring and the connecting wheel provides a stable and precise driving force for the liquid level control structure, ensuring stable rotational speed and consequently guaranteeing accurate coolant level control. A single stirring drive motor 134 simultaneously drives both the magnetic cleaning structure 120 and the liquid level control structure, achieving single-power-source multi-component drive. This simplifies the equipment structure, reduces energy consumption and equipment failure rate, and facilitates synchronized control of the movement speed of each component, improving the coordination of the various structural actions. The outer magnetic ring 131 is composed of multiple outer magnetic plates with opposite magnetic directions, forming a matching magnetic field with the magnetic cleaning structure 120, enhancing magnetic transmission efficiency and stability.

[0028] like Figure 1 As shown, the grinding spindle 20 is an air spindle, and the grinding wheel 30 is a diamond grinding wheel. The grinding spindle 20 drives the grinding wheel 30 to thin the silicon carbide wafer from the outside to the inside. Air spindles are characterized by high precision, high speed, and low vibration, ensuring the smooth operation of grinding spindles for up to 20 seconds. The stability and coaxiality during operation reduce the impact of spindle vibration on grinding accuracy, meeting the high-precision thinning requirements of semiconductor silicon carbide. Diamond grinding wheels have the advantages of high hardness and high wear resistance, which can effectively cope with the grinding of high-hardness materials such as silicon carbide, extend the service life of grinding wheel 30, reduce the replacement frequency of grinding wheel 30, and improve processing efficiency. The grinding spindle 20 drives the grinding wheel 30 to thin the silicon carbide sheet from the outside to the inside, which can make the grinding force gradually and evenly distributed, avoiding the edge of the silicon carbide sheet from cracking due to excessive edge force in the early stage of processing. At the same time, it is easy to discharge the grinding debris to the outside, reduce the accumulation of debris in the grinding area, avoid the debris from scratching the processed surface, and further improve the grinding quality and processing safety.

[0029] The beneficial effects of this application are: This application achieves high precision, high stability, and high cleanliness in silicon carbide thinning processing through the synergistic cooperation of various structures. The cooperation between the liquid distribution structure 50 and the cooling spray structure 40 ensures that the coolant evenly covers the grinding area, effectively controls the grinding temperature, and avoids cracks or performance damage to silicon carbide due to high temperature. The speed at which the liquid distribution structure 50 spreads the coolant follows the rotation speed of the grinding spindle 20. That is, the faster the grinding wheel 30 rotates (the faster the temperature of the grinding wheel 30 rises), the faster the liquid distribution structure 50 spreads the coolant (the faster the coolant cools down), thereby achieving adaptive adjustment of the coolant cooling rate. The linkage between the liquid level control structure and the coolant recovery structure 110 enables precise liquid level control and efficient recovery of coolant, reducing coolant waste. Combined with the thinning method from the outside to the inside, it prevents debris in the coolant from flowing into the unthinned area, reducing the accumulation of debris in the grinding area, avoiding scratches on the machined surface by debris, and further improving grinding quality and processing safety. The magnetic cleaning structure 120 ensures the cleanliness of the coolant circulation system, preventing impurities from affecting grinding accuracy and wheel life; the vacuum adsorption structure 80 and the auxiliary stage 90 work together to ensure the silicon carbide wafer is firmly clamped, preventing displacement during processing; the stirring drive structure 130 provides stable power for liquid level control and cleaning functions. The overall structure is reasonably laid out, and the actions of each component are highly coordinated, which greatly improves the yield and processing efficiency of silicon carbide wafer thinning and reduces processing costs.

[0030] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed invention.

Claims

1. A high-precision grinding wheel thinning device for semiconductor silicon carbide, characterized in that, include: Spindle mounting base (10), grinding spindle (20), grinding wheel (30), cooling spray structure (40), liquid equalization structure (50), outer protective cover (60), grinding table (70), vacuum adsorption structure (80), auxiliary table (90), liquid level control structure (100), coolant recovery structure (110), magnetic cleaning structure (120) and stirring drive structure (130); When the grinding spindle (20) rotates, the liquid equalization structure (50) rotates along with it, so as to evenly distribute the coolant and spray it onto the grinding wheel (30). The vacuum adsorption structure (80), auxiliary platform (90), liquid level control structure (100) and coolant recovery structure (110) are arranged sequentially from the inside to the outside on the grinding table (70); The liquid level control structure (100) rotates and stirs the coolant on the grinding table (70), creating a height difference between the center and the outer side of the coolant, thereby allowing excess coolant to pass over the liquid level control structure (100) and enter the coolant recovery structure (110); The coolant recovery structure (110) is provided with an annular baffle (111) on its outer side and a filter screen (112) inside its interior. The magnetic cleaning structure (120) is disposed inside the coolant recovery structure (110) and is used to clean the filter screen (112). The stirring drive structure (130) is disposed in the grinding table (70) and is used to drive the liquid level control structure (100) and the magnetic cleaning structure (120).

2. The high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 1, characterized in that, The grinding spindle (20) is mounted on the spindle mounting base (10) and driven by the spindle mounting base (10). The grinding wheel (30) is mounted on the grinding wheel frame (21) at the output end of the grinding spindle (20). The liquid distribution structure (50) includes a liquid distribution cover (51) and a connecting frame (52). The liquid distribution cover (51) is fixedly mounted on the grinding spindle (20) through the connecting frame (52). The cooling spray structure (40) is mounted on the spindle mounting base (10) with its spray head facing the inner wall of the liquid distribution cover (51). The outer protective cover (60) is mounted on the spindle mounting base (10) and is located outside the grinding wheel (30).

3. The high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 2, characterized in that, Both the grinding wheel holder (21) and the grinding wheel (30) are provided with flow holes (31) for the flow of coolant, and the positions of the flow holes (31) are corresponding.

4. The high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 2, characterized in that, The inner wall of the liquid distribution cover (51) is provided with a liquid collection tank (53) and a plurality of guide tanks (54) from top to bottom. When the liquid distribution cover (51) rotates, the coolant flows into the plurality of guide tanks (54) through the liquid collection tank (53).

5. A high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 1, characterized in that, The bottom of the outer cover (60) is lower than the top of the grinding wheel (30) to block the coolant splashing from the top of the grinding wheel (30). The bottom of the outer cover (60) is provided with a guide ring (61) facing the bottom of the grinding wheel (30) to guide the coolant to flow to the bottom of the grinding wheel (30).

6. The high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 1, characterized in that, The vacuum adsorption area at the top of the vacuum adsorption structure (80) is smaller than the area of ​​the silicon carbide wafer. A sealing ring (91) is provided on the auxiliary stage (90) to cooperate with the vacuum adsorption structure (80) to adsorb the silicon carbide wafer.

7. The high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 1, characterized in that, The liquid level control structure (100) is composed of multiple high bumps (101) and multiple low bumps (102) arranged alternately to form a stirring blade-like structure, wherein the high bumps (101) and low bumps (102) are both lower on the inside and higher on the outside.

8. A high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 1, characterized in that, The magnetic cleaning structure (120) is composed of multiple inner magnetic plates (121) with opposite magnetic directions. Each inner magnetic plate (121) has a flexible vertical plate (122) at its top. When the magnetic cleaning structure (120) rotates inside the coolant recovery structure (110), the flexible vertical plate (122) stirs the coolant and cleans the filter screen (112).

9. A high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 8, characterized in that, The stirring drive structure (130) includes an outer magnetic ring (131), a connecting gear ring (132), a connecting gear (133), and a stirring drive motor (134). The outer magnetic ring (131) is composed of multiple outer magnetic plates with opposite magnetic directions and corresponds to the magnetic cleaning structure (120). The connecting gear ring (132) is located inside the outer magnetic ring (131) and is fixedly connected to the liquid level control structure (100). The connecting gear (133) is located inside the connecting gear ring (132) and meshes with the connecting gear ring (132). The output end of the stirring drive motor (134) is fixedly connected to the connecting gear (133).

10. A high-precision grinding wheel thinning device for semiconductor silicon carbide according to claim 1, characterized in that, The grinding spindle (20) is an air spindle, the grinding wheel (30) is a diamond wheel, and the grinding spindle (20) drives the grinding wheel (30) to thin the silicon carbide wafer from the outside to the inside.