Dual-coordinated cyclic hexanuclear tin oxide cluster compounds, photoresist compositions and their applications in photolithography

Abstract

This invention relates to a dual-coordinated cyclic hexanuclear tin oxide cluster compound, a photoresist composition, and its application in photolithography, belonging to the fields of photolithography materials and semiconductor manufacturing technology. The composition uses a cyclic hexanuclear tin oxide cluster as the active component, is compatible with common solvents and coating processes, and exhibits excellent thermal stability (significant mass loss only occurs above 260°C), meeting the requirements of coating, pre-baking, and exposure processes. This material demonstrates good film-forming properties, enabling the formation of uniform, low-defect thin films on silicon wafers, suitable for deep ultraviolet (DUV) lithography, electron beam (EB) lithography, and extreme ultraviolet (EUV) lithography. In these platforms, the photoresist composition can achieve high resolution, low line edge roughness (LER), and high-fidelity pattern transfer, exhibiting high etching resistance, meeting the performance and process requirements of advanced microelectronics manufacturing.

Description

Technical Field

[0001] This invention belongs to the field of photolithography materials and semiconductor manufacturing technology, specifically relating to dual-coordinated cyclic hexanuclear tin oxide cluster compounds, photoresist compositions and their applications in photolithography. Background Technology

[0002] As the feature size of integrated circuits continues to shrink, deep ultraviolet (DUV), electron beam (EB), and extreme ultraviolet (EUV, 13.5nm) lithography are gradually becoming the core patterning methods for advanced processes. Photoresist materials need to achieve high resolution, low line edge roughness (LER), and sufficient sensitivity under short wavelength or high-energy electron action, while also taking into account good film formation properties, thermal stability, and etching tolerance to meet the process window requirements of subsequent plasma etching and pattern transfer.

[0003] In the existing technology, the chemical amplified photoresist (CAR) system has mature technology, but it has problems such as limited absorption cross section, increased pattern blurring and random fluctuations caused by acid diffusion, narrow development window and low etching selectivity under short wavelength conditions, which make it difficult to meet the dual requirements of advanced nodes for resolution and manufacturability.

[0004] To overcome the aforementioned shortcomings, inorganic-organic hybrid photoresists, represented by metal-oxide clusters, have emerged in recent years. These materials exhibit high absorption at short wavelengths and can form a dense inorganic network after irradiation, thereby improving etching resistance.

[0005] However, existing metal oxide cluster photoresists still generally face the following technical bottlenecks: First, it is difficult to achieve a balance between the dosage required to achieve insolubility and LER; second, the solubility and rheological stability of some systems are insufficient, which can easily lead to defects such as bridging or collapse on silicon wafers, affecting pattern fidelity; third, the thermal and chemical stability are limited, and the weight loss, outgassing and interface contamination caused by ligand removal or residual halogens are not conducive to the stable operation of pre-baking, development and subsequent etching steps. Summary of the Invention

[0006] To address the aforementioned issues, this invention provides a dual-coordinated cyclic hexanuclear tin oxide cluster photoresist composition. This tin oxide cluster photoresist material exhibits high thermal stability and excellent film-forming properties under conventional spin-coating-pre-baking-exposure-development processes. It can achieve high resolution and low LER at lower doses and maintain a wide development window and high etching selectivity under multi-platform exposure conditions, thereby improving process stability.

[0007] This invention utilizes the high absorption efficiency of tin under EUV and its excellent inorganic network etching resistance to improve the sensitivity of photolithography reactions, reduce the material's dependence on external acid sources, and avoid imaging fluctuations caused by acid diffusion. The dual-coordinated cyclic hexanuclear tin-oxygen clusters have nanoscale molecular dimensions, theoretically enabling lower LER (light erosion resistance). The composition can form uniform, low-defect films on silicon wafers. Rapid network densification and local cross-linking are induced during irradiation, effectively suppressing edge roughness caused by reaction diffusion, thereby achieving high resolution and low LER at lower doses. It is suitable for various photolithography techniques such as electron beam lithography, deep ultraviolet lithography, and extreme ultraviolet lithography. Simultaneously, this material exhibits high etching resistance, with an etching selectivity ratio of 25.7:1.

[0008] This invention aims to address the limitations of photoresist types and the problems of low sensitivity, low resolution, and high line roughness of existing photoresists. This invention provides a photoresist composition based on cyclic tin oxide clusters and its application.

[0009] The photoresist composition provided by this invention is suitable for deep ultraviolet (DUV), electron beam (EB) and extreme ultraviolet (EUV) lithography, and can achieve high resolution and low LER imaging at low exposure doses, with good process compatibility and broad application prospects.

[0010] The technical solution of the present invention is as follows: a cyclic hexanuclear tin oxide cluster compound suitable for the field of photolithography is provided, the general structural formula of which is shown in formula (I).

[0011]

[0012] ( )

[0013] Wherein, R is an independent and identical or different organic group selected from C1-C6. 12 Straight-chain or branched alkyl groups, C3-C 10 cycloalkyl, C6-C 18 Aryl or substituted aryl.

[0014] Some specific cyclic tin oxide cluster compounds have R independently selected from the following structures:

[0015]

[0016] Some specific cyclic tin oxide cluster compounds, wherein R is preferably selected from methyl, ethyl, n-propyl, n-butyl, tert-butyl, octyl, phenyl or benzyl.

[0017] Some specific cyclic tin oxide cluster compounds have the following structures:

[0018]

[0019]

[0020]

[0021] Some specific cyclic tin oxide cluster compounds have the following structures:

[0022]

[0023]

[0024] Some specific cyclic tin oxide cluster compounds have the following structures:

[0025]

[0026]

[0027] A photoresist composition comprising at least one of the above-mentioned compounds.

[0028] A photoresist composition comprising, by weight percentage:

[0029] (1) Solvent: 70~99wt%;

[0030] (2) At least one of the cyclic hexanuclear tin oxide cluster compounds: 1~30 wt%

[0031] (3) Dispersant: 0~1wt%;

[0032] (4) Other additives: 0~2wt%;

[0033] The total percentage of the above components is 100%;

[0034] The solvents include, but are not limited to, one or any mixture of solvents selected from the following: alcohols (methanol, ethanol, isopropanol), esters (propylene glycol methyl ether acetate, butyl acetate, ethyl lactate), ethers (propylene glycol methyl ether, diethylene glycol dimethyl ether), ketones (cyclohexanone, methyl isobutyl ketone), cyclic ethers (tetrahydrofuran), aromatics (toluene, xylene), alkanes (n-hexane, n-heptane, isooctane), and halogenated hydrocarbons (chloroform, dichloromethane, 1,2-dichloroethane). Propylene glycol methyl ether acetate, chloroform, cyclohexanone, and toluene are preferred.

[0035] Optionally, the photoresist composition may further include a dispersant for improving wetting and leveling properties during the coating process, inhibiting local aggregation, and improving film uniformity. The dispersant may be selected from one or more of fluorinated surfactants, siloxane leveling agents, or nonionic surfactants, such as fluorinated polyether surfactants, polyether-modified polysiloxane leveling agents, and polyoxyethylene ether surfactants.

[0036] The other additives include at least photoacids (PAG) and free radical quenchers; optionally, they may also include surfactants, leveling agents, defoamers, chelating / stabilizing agents and basic acid quenchers (such as tertiary amines or nitrogen-containing heterocycles).

[0037] The photoacids include, but are not limited to, thionium salts (triphenylthionium hexafluoroantimonate, tri(p-methylphenyl)thionium hexafluorophosphate, diphenyl(4-isopropylphenyl)thionium trifluoromethanesulfonate), iodonium salts (diphenyliodonium hexafluoroantimonate, 4,4'-dimethyldiphenyliodonium hexafluorophosphate), borates (diphenyliodonium tetra(pentafluorobenzene)borate, triphenylthionium tetra(pentafluorobenzene)borate), and sulfonates (N-hydroxynaphthalimide trifluoromethanesulfonate, o-nitrobenzyl trifluoromethanesulfonate).

[0038] The free radical quenchers include hydroquinone, p-methoxyphenol, di-tert-butylcresol, benzothiazide, p-benzoquinone, etc.

[0039] The application of photoresist compositions for preparing patterned photoresist films is specifically as follows:

[0040] (1) Coat the above photoresist composition onto the substrate surface;

[0041] (2) Drying;

[0042] (3) Perform irradiation exposure, wherein the exposure is selected from deep ultraviolet light, extreme ultraviolet light or electron beam;

[0043] (4) Develop and dry in developer to obtain patterned photoresist film.

[0044] The drying in step (2) is to let it stand at room temperature or dry it at a temperature of 50-120℃ for 30-180 s; the drying in step (4) is to blow it with nitrogen or air or dry it at a temperature of 50-120℃ for 30-180 s.

[0045] The developing solution is selected from esters, ketones, alcohols or mixtures thereof, including but not limited to ethyl acetate, methyl isobutyl ketone, isopropanol, acetone, toluene, cyclohexanone, and methyl acetate; the developing time is 5-180s and the developing temperature is 15-30℃.

[0046] The photoresist film thickness is 20-300 nm, preferably 30-50 nm; the spin coating speed is 500-8000 rpm.

[0047] The substrate is selected from silicon wafers, thermally oxidized silicon, silicon nitride, quartz, sapphire, and glass.

[0048] Applications of the cyclic hexanuclear tin oxide cluster compound and the photoresist composition in the field of photolithography.

[0049] Applications of the photoresist composition in semiconductor device manufacturing, micro / nano fabrication, microelectromechanical systems, and micro-optical element fabrication.

[0050] The present invention has the following beneficial effects:

[0051] 1. This invention uses carboxylic acid (COO) - This involves the O / S synergistic dual coordination of ligands and sulfur (S) with Sn. Compared to the monocoordination system of carboxylic acids, this dual coordination structure can significantly enhance the coordination binding strength between the ligand and the tin oxide cluster framework, reduce ligand exchange and structural fluctuations, thereby improving the structural and process stability of the material during formulation, coating and heat treatment, and has a wider range of process applicability.

[0052] 2. The dual coordination structure of the present invention improves the coordination saturation of the cluster and tends to enhance the structural constraint and stability of the skeleton, restrict the conformational freedom of molecules / ligands and reduce their migration probability, thereby helping to reduce the random fluctuations of the edge of the pattern after exposure and improve the stability of the line boundary and the fidelity of the pattern.

[0053] 3. Based on retaining the Sn-O skeleton irradiation response, this invention introduces potential additional reaction channels brought about by Sn-S interaction, making the exposure-induced network generation more complete and the solubility transition steeper, thus making it more conducive to optimizing the resolution-line roughness-sensitivity (RLS) tradeoff.

[0054] 4. The O / S dual coordination strategy of the present invention has better adaptability to different developing systems and process parameter changes, which can broaden the range of selectable developing solutions and process conditions, reduce dependence on a single narrow process window, and facilitate compatibility with existing process systems.

[0055] 5. Since the material of this invention is mainly composed of the Sn-O framework of tin oxide clusters and has a relatively high content of inorganic components, it is not easily eroded by rapid etching during plasma etching. At the same time, the O / S dual coordination structure makes it easier for the material to form a denser and more fully cross-linked network structure after exposure, thereby further improving the resistance of the pattern to plasma etching and enabling the pattern to maintain its original linewidth size and clear and complete boundaries during the etching transfer process.

[0056] 6. While maintaining the O / S dual coordination framework, the solubility, film-forming properties, and sensitivity of the material can be systematically adjusted by regulating the R groups, which facilitates the construction of scalable material systems and enables targeted optimization of formulation and process windows for different application requirements. Attached Figure Description

[0057] Figure 1 The product of Example 1 1 H NMR spectrum.

[0058] Figure 2 The product of Example 2 1 H NMR spectrum.

[0059] Figure 3 The product of Example 3 1 H NMR spectrum.

[0060] Figure 4 The product of Example 2 13 C10 NMR spectrum.

[0061] Figure 5 This is a crystal structure diagram of the product of Example 1.

[0062] Figure 6 This is a crystal structure diagram of the product of Example 2.

[0063] Figure 7 The image shows the thermal analysis spectrum of the product from Example 1.

[0064] Figure 8 The image shows the thermal analysis spectrum of the product from Example 2.

[0065] Figure 9 Powder X-ray diffraction (PXRD) spectra of the product of Example 2: experimental spectrum and simulated spectrum generated based on single crystal structure.

[0066] Figure 10 This is a topographic image of the photoresist film in Example 8 under AFM.

[0067] Figure 11 This is a thickness measurement diagram of the photoresist film in Example 10 under AFM.

[0068] Figure 12 This is a SEM image of the patterned photoresist film after electron beam exposure and development in Example 12.

[0069] Figure 13 This is the AFM image of the patterned photoresist film after development in Example 12.

[0070] Figure 14 This is a contrast curve diagram of Example 12.

[0071] Figure 15 This is a SEM image of the patterned photoresist film after MIBK development in Example 13.

[0072] Figure 16 This is a SEM image of the patterned photoresist film after development with toluene in Example 13.

[0073] Figure 17 This is an optical microscope image of the patterned photoresist film after development in Example 14.

[0074] Figure 18 This is the AFM image of the patterned photoresist film after development in Example 15.

[0075] Figure 19 This is the AFM image before etching in Example 17.

[0076] Figure 20 This is the AFM image after etching in Example 17. Detailed Implementation

[0077] The present invention will be further described below with reference to specific implementation methods. All raw materials used in the embodiments are commercially available. It should be understood that the following embodiments are merely illustrative and explanatory of the present invention and should not be construed as limiting the scope of protection of the present invention. All technologies implemented based on the above content of the present invention are covered within the scope of protection intended by the present invention.

[0078] Example 1

[0079]

[0080] 2 mmol (308.37 mg) of o-mercaptobenzoic acid and 4 mmol (272.20 mg) of sodium ethoxide were dissolved in 100 mL of anhydrous ethanol. The reaction was carried out under nitrogen protection, and the temperature was adjusted to 45 °C and maintained for 30 minutes. At this point, the solution was yellow and transparent. Subsequently, 2 mmol (439.36 mg) of dimethyltin dichloride was dissolved in 20 mL of anhydrous ethanol and added to the reaction system. The reaction was continued at 45 °C for 12 hours. At the end of the reaction, the solution became a white emulsion. After the reaction was complete, the solution was filtered, and the filtrate was collected and distilled under reduced pressure. A white solid was obtained, which was dried in a vacuum oven for 24 h to obtain 550 mg of crude product. The product was washed with 50 mL of diethyl ether for 2 h and dried in a vacuum oven for 24 h to obtain 460 mg of product, named Sn-1.

[0081] Example 2

[0082]

[0083] 2 mmol (308.37 mg) of o-mercaptobenzoic acid and 4 mmol (272.20 mg) of sodium ethoxide were dissolved in 20 mL of anhydrous ethanol. The reaction was carried out under nitrogen protection, and the temperature was adjusted to 45 °C and maintained for 30 minutes. At this point, the solution was yellow and transparent. Subsequently, 2 mmol (607.68 mg) of dibutyltin dichloride was dissolved in 20 mL of anhydrous ethanol and added to the reaction system. The reaction was continued at 45 °C for 12 hours. At the end of the reaction, the solution became a white emulsion. After the reaction was complete, the solution was filtered, and the filtrate was collected and distilled under reduced pressure. A white solid was obtained, which was dried in a vacuum oven for 24 h to give 680 mg of crude product. The product was washed with 50 mL of diethyl ether for 2 h and dried in a vacuum oven for 24 h to give 608 mg of product, named Sn-2.

[0084] Example 3

[0085]

[0086] 2 mmol (308.37 mg) of o-mercaptobenzoic acid and 4 mmol (272.20 mg) of sodium ethoxide were dissolved in 20 mL of anhydrous ethanol. The reaction was carried out under nitrogen protection, and the temperature was adjusted to 45 °C and maintained for 30 minutes. At this point, the solution was yellow and transparent. Subsequently, 2 mmol (687.64 mg) of diphenyltin dichloride was dissolved in 20 mL of anhydrous ethanol and added to the reaction system. The reaction was continued at 45 °C for 12 hours. At the end of the reaction, the solution became a white emulsion. After the reaction was complete, the solution was filtered, and the filtrate was collected and distilled under reduced pressure. A white solid was obtained, which was dried in a vacuum oven for 24 h to obtain 50 mg of crude product. The product was washed with 50 mL of diethyl ether for 2 h and dried in a vacuum oven for 24 h to obtain 45 mg of product, named Sn-3.

[0087] Example 4

[0088] Thermal analysis was performed on the products Sn-1 and Sn-2.

[0089] Thermogravimetric analysis (TGA, Mettler-Toledo TGA / SDTA851e, Switzerland): under argon atmosphere, at 10 °C·min -1 From 50℃ to 600℃; TGA curves are shown below. Figure 7 and Figure 8 The results showed that the sample did not experience significant weight loss before reaching approximately 260°C, indicating that the cyclic hexanuclear tin oxide cluster possesses good thermal stability.

[0090] Example 5

[0091] Preparation of photoresist film: 10 mg of Sn-1 compound was dissolved in 1.0 mL of chloroform, mixed well, and then filtered through a polytetrafluoroethylene (PTFE) filter membrane with a pore size of 0.22 μm to obtain a photoresist composition solution. A silicon wafer substrate was placed on a spin coater, and 50 μL of the photoresist composition solution was dropped onto the substrate surface, and the coating was applied at 5000 r·min. -1 Spin-coating was performed for 30 seconds. The coated substrate was then pre-baked on a hot plate at 100°C for 1 minute to dry, yielding a photoresist film. This photoresist film was used for subsequent irradiation exposure and development testing.

[0092] Example 6

[0093] Preparation of photoresist film: 10 mg of Sn-2 compound was dissolved in 1.0 mL of chloroform, mixed well, and then filtered through a polytetrafluoroethylene (PTFE) filter membrane with a pore size of 0.22 μm to obtain a photoresist composition solution. A silicon wafer substrate was placed on a spin coater, and 50 μL of the photoresist composition solution was dropped onto the substrate surface, and the coating was applied at 5000 r·min. -1 Spin-coating was performed for 30 seconds. The coated substrate was then pre-baked on a hot plate at 100°C for 1 minute to dry, yielding a photoresist film. This photoresist film was used for subsequent irradiation exposure and development testing.

[0094] Example 7

[0095] Preparation of photoresist film: 10 mg of Sn-3 compound was dissolved in 1.0 mL of chloroform, mixed well, and then filtered through a polytetrafluoroethylene (PTFE) filter membrane with a pore size of 0.22 μm to obtain a photoresist composition solution. A silicon wafer substrate was placed on a spin coater, and 50 μL of the photoresist composition solution was dropped onto the substrate surface, and the coating was applied at 5000 r·min. -1 Spin-coating was performed for 30 seconds. The coated substrate was then pre-baked on a hot plate at 100°C for 1 minute to dry, yielding a photoresist film. This photoresist film was used for subsequent irradiation exposure and development testing.

[0096] Example 8

[0097] To evaluate the surface quality of the photoresist film obtained by spin coating in Example 6, the surface morphology of the film was acquired using an atomic force microscope (AFM, Bruker Dimension Icon, USA) in tapping mode, with a scanning area of ​​10 μm × 10 μm. The results are as follows: Figure 10 As shown: the film surface is uniform, with no obvious particles or pinholes, and the root mean square roughness (Rq) is 0.238 nm, indicating that its surface is smooth and meets the requirements of subsequent exposure and development processes.

[0098] Example 9

[0099] To evaluate the quality of the spin-coated photoresist films in Examples 5 and 7, the same method as in Example 8 was used for testing, and the root mean square roughness (Rq) of the films was 0.331 nm and 0.550 nm, respectively.

[0100] Example 10

[0101] The thickness of the photoresist film was determined using the scratch-AFM step method: First, a clean scratch was made on the film surface with a sharp blade, exposing a portion of the silicon substrate; then, the morphology at the scratch crossing point was captured using atomic force microscopy (AFM, Bruker Dimension Icon), and the step height was extracted; this value is the film thickness. The AFM step measurement in Example 6 is as follows... Figure 11 As shown, the film thickness was measured to be approximately 41.9 nm. To avoid debris affecting the measurement, nitrogen gas can be gently blown through the scratch and samples can be taken from areas without debris buildup.

[0102] Example 11

[0103] Photoresist sensitivity testing: The sensitivity of the photoresist film in Example 6 was evaluated using electron beam lithography (EBL, Raith ELPHY Quantum, Germany). Surface exposure was performed at 2 kV voltage according to a 7×7 dose matrix: the initial dose was 50 μC cm⁻¹. -2 At 50 μC cm -2 The dosage is increased in steps, with a maximum dose of 2450 μC cm⁻¹. -2 .

[0104] Example 12

[0105] The sample exposed in Example 11 was developed by immersing it in toluene for 1 min, then drying it with nitrogen to obtain a patterned photoresist film. The film was then observed and imaged using a scanning electron microscope (SEM), as shown below. Figure 12 The remaining film thickness in the exposed area was measured using atomic force microscopy (AFM). Figure 13 Using the unexposed film thickness h0 as a baseline, the normalized residual thickness is calculated, and a dose-normalized residual thickness (contrast) curve is plotted accordingly, as shown below. Figure 14 The threshold dose D0 was obtained as 133.44 µC cm⁻¹. -2 With sensitivity parameters such as contrast ratio γ=1.30.

[0106] Example 13

[0107] Patterning tests were performed on the photoresist film of Example 6 using electron beam (EB) lithography (Raith ELPHY Quantum, Germany) at 30 kV. After exposure, different developers were used for development. MIBK development: when the exposure dose was 30 nC·cm⁻¹ -1 When the period is 80 nm, after development in MIBK for 1 min, a lithographic line with a linewidth (CD) of 29 nm and an LER of 5.5 nm is obtained. Figure 15 Toluene development: when the exposure dose is 43 nC·cm⁻¹ -1 When the period is 100 nm, after development in toluene for 1 min, a lithographic line with a linewidth (CD) of 24 nm and an LER of 3.7 nm is obtained. Figure 16 The above results show that the photoresist can achieve sub-30 nm linewidth patterns under different developing solutions and exhibits low LER imaging characteristics.

[0108] Example 14

[0109] The photoresist film of Example 6 was exposed using deep ultraviolet light (254 nm) to transfer the pattern on the mask onto the silicon wafer. After development with MIBK for 1 min, as shown... Figure 17 As shown, this indicates that the photoresist has good pattern transfer capability and process adaptability under DUV conditions.

[0110] Example 15

[0111] The photoresist film of Example 6 was subjected to EUV exposure on the soft X-ray interference lithography beamline of the Shanghai Synchrotron Radiation Facility (SSRF). The dose was 200 mJ / cm². -2 When the period is 60 nm, after 1 min of MIBK development, the linewidth is approximately 30 nm. Figure 18 As shown, this demonstrates that the material exhibits pattern transfer capability and good process adaptability under EUV conditions.

[0112] Example 16

[0113] The etch resistance of the dose matrix obtained in Example 11 was tested. The photoresist was etched using an HSE200S instrument with SF6 as the etching gas, a chamber pressure of 0.015 Torr, and a power of 1400 W.

[0114] Example 17

[0115] AFM testing was performed on the photolithographic patterns before and after etching in Example 16. The AFM image before etching is shown below. Figure 19 As shown, the height difference is 34.6 nm; the AFM pattern after etching is shown below. Figure 20As shown, the height difference is 889 nm. The calculated etching selectivity ratio is 25.7:1 (889 / 34.6=25.7), indicating that the O / S dual-coordinate photoresist of this invention has excellent etching resistance.

[0116] Comparative Example 1

[0117] A tin-oxygen cluster photolithography material (referred to as Comparative Material 1) coordinating only oxygen atoms with Sn was used to prepare the photolithography pattern. AFM tests were performed on the samples before and after etching under the same etching conditions as in Example 17. The AFM test results showed that the height difference before etching was 15.1 nm; the height difference after etching was 25.8 nm, thus yielding an etching selectivity ratio of 1.71:1 (25.8 / 15.1=1.71) relative to silicon. The structural formula of Comparative Material 1 is as follows:

[0118]

[0119] Comparative Material 1

[0120] As shown in Example 17 and Comparative Example 1, under the same etching conditions, the etching selectivity ratio of the O / S dual coordination system of the present invention is 25.7:1, significantly higher than the 1.71:1 of the O-only coordination system, representing an improvement of approximately 15 times. This indicates that introducing S into the coordination process is beneficial for improving the material's resistance to plasma etching. The reasons for this may be twofold: firstly, the O / S synergistic dual coordination enhances the coordination strength and structural constraint between the ligand and the tin-oxygen cluster framework, resulting in a denser and more fully cross-linked network structure after exposure, making it less susceptible to rapid destruction during etching; secondly, S participation in the coordination process may promote the enrichment of inorganic components after exposure and enhance the densification of the film layer, thereby reducing the plasma erosion rate of the film layer. Based on these effects, the material of the present invention is more conducive to maintaining pattern dimensions and clear, intact boundaries during the etching transfer process.

Claims

1. The application of dual-coordinated cyclic hexanuclear tin-oxygen cluster compounds, characterized in that, The compound is used in the field of photolithography, and the general structural formula of the compound is shown in (I): ； Where R represents independent and identical or different C1-C 12 Straight-chain or branched alkyl, phenyl or benzyl.

2. The application according to claim 1, characterized in that, The compound has the following structure: 、 、 、 、 。 3. A photoresist composition, characterized in that, The composition comprises the following components in weight percentage: Solvent: 70~99%; Compound (I) according to claim 1: 1~30%; Dispersant: 0~1%; Other additives: 0~2%; The total percentage of the above components is 100%; The other additives are selected from one or more of the following: photoacids, free radical quenchers, surfactants, leveling agents, defoamers, chelating agents, stabilizers, and alkaline acid quenchers.

4. The photoresist composition according to claim 3, characterized in that, The solvent is selected from one or any mixture of methanol, ethanol, isopropanol, propylene glycol methyl ether acetate, butyl acetate, ethyl lactate, propylene glycol methyl ether, diethylene glycol dimethyl ether, cyclohexanone, methyl isobutyl ketone, tetrahydrofuran, dimethoxyethane, toluene, xylene, n-hexane, n-heptane, isooctane, chloroform, dichloromethane, and 1,2-dichloroethane.

5. The application of the photoresist composition as described in claim 3 or 4, characterized in that, The photoresist composition is used to form a patterned photoresist film, and the specific method is as follows: (1) Coating the photoresist composition onto the substrate surface; (2) Drying; (3) Perform irradiation exposure, wherein the exposure is selected from deep ultraviolet light, extreme ultraviolet light or electron beam; (4) Develop and dry in developer to obtain patterned photoresist film.

6. The application of the photoresist composition according to claim 5, characterized in that: The drying in step (2) involves standing at room temperature or drying at a temperature of 50-120℃ for 30-180 seconds.

7. The application of the photoresist composition according to claim 5, characterized in that: The drying in step (4) is done by blowing with nitrogen or air or drying at a temperature of 50-120°C for 30-180 seconds.

8. The application of the photoresist composition according to claim 5, characterized in that: The developing solution is selected from ethyl acetate, methyl isobutyl ketone, isopropanol, acetone, toluene, cyclohexanone, and methyl acetate; the developing time is 5-180 s and the developing temperature is 15-30℃.

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