A device characteristic analysis method based on dielectric characteristics of a medium and electrical characteristics of a device

Abstract

This invention discloses a device characteristic analysis method based on dielectric properties and device electrical properties, comprising: obtaining the location of dielectric faults in the device; obtaining the ellipticity parameters of the electronic polarization dielectric properties and the ion polarization dielectric properties of the dielectric material before and after stress application; fitting a first parameter set before and after stress application using a TL optical model, and fitting a second parameter set before and after stress application using a LO-TO oscillation model; determining the change in the average static dielectric constant; obtaining the local effective dielectric constant of the nanoscale cross-section containing crystalline regions of the dielectric material using TEM; determining the thermal conductivity of the dielectric material before and after stress application; and completing device modeling and simulation studies based on the average static dielectric constant, local effective dielectric constant, thermal conductivity, and dielectric defect parameters. This invention can be used to evaluate the impact of dielectric constant decrease and non-uniformity in the peak region of a micrometer-level electric field on the electrical properties of the device.

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