Half-bridge power module structure of EMI filter integrated with terminal inductor

Abstract

The invention relates to a half-bridge power module structure of an EMI filter integrated with a terminal inductor, and the structure comprises a DBC insulating substrate which comprises an upper surface metal layer, a middle insulating layer 23 and a lower surface metal layer 24. An upper bridge arm switch tube chip 12, an upper bridge arm diode chip 13, a lower bridge arm switch tube chip 14, a lower bridge arm diode chip 15, a decoupling capacitor 16, a Y capacitor and a power terminal are arranged on the upper surface metal layer; a common mode inductor is arranged above the Y capacitor, the common mode inductor is formed by surrounding a positive terminal 19 of a terminal inductor and a negative terminal 20 of the terminal inductor by an annular ferrite magnetic core 21 of the terminal inductor, and the coupling coefficient of the coupling inductor is adjusted by adjusting the distance between the common mode inductor and the Y capacitor. According to the invention, the filtering effect of the filter is optimized, and a reliable solution is provided for high-frequency application of a wide bandgap semiconductor device.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of power semiconductor devices and electromagnetic compatibility, in particular to a half-bridge power module structure integrated with terminal inductance EMI filter. BACKGROUND

[0002] With the rapid development of wide bandgap semiconductor devices (such as silicon carbide SiC MOSFET), the high-frequency switching characteristics of the devices significantly improve the efficiency and power density of power electronic systems. However, the high-amplitude voltage and current rate generated by fast switching action can be coupled through parasitic parameters in the circuit, causing serious common-mode electromagnetic interference (CM EMI), especially in the high-frequency band of 20-100MHz. This interference not only affects the stability of the system itself, but also causes electromagnetic compatibility problems to the surrounding equipment, which restricts the promotion of wide bandgap devices in high-frequency applications.

[0003] Integrated filters can significantly reduce electromagnetic interference in the high-frequency range. However, due to space limitations, filter parameters are limited, so it is challenging to integrate multiple-stage filters into power modules to further suppress EMI. In addition, the pursuit of higher power density makes components more closely integrated, exacerbating coupling problems, which adversely affect the filtering performance of integrated EMI filters. Therefore, in integrated power modules, it is crucial to reduce the influence of parasitic coupling on filter filtering effect.

[0004] In view of the above problems, there is an urgent need for an EMI suppression scheme that can comprehensively optimize parasitic parameters and adapt to compact layout. SUMMARY

[0005] The purpose of the present application is to provide a half-bridge power module structure integrated with terminal inductance EMI filter, which can significantly improve the insertion loss in the high-frequency band by tightly coupling the terminal common-mode inductance and Y-capacitor, and offsetting the parasitic inductance of the Y-capacitor branch, thus optimizing the filtering effect of the filter and providing a reliable solution for the high-frequency application of wide bandgap semiconductor devices.

[0006] To achieve the above purpose, the present application provides the following scheme:

[0007] A half-bridge power module structure integrated with terminal inductance EMI filter, comprising: a DBC insulating substrate including an upper surface metal layer, an intermediate insulating layer and a lower surface metal layer, the upper surface metal layer being arranged with an upper bridge arm switch tube chip, an upper bridge arm diode chip, a lower bridge arm switch tube chip, a lower bridge arm diode chip, a decoupling capacitor, a Y-capacitor and a power terminal;

[0008] The Y capacitor is provided with a common mode inductor, and the common mode inductor is composed of a ring-shaped ferrite core of a terminal inductor and a positive terminal of the terminal inductor and a negative terminal of the terminal inductor, wherein the coupling coefficient of the coupling inductor is adjusted by adjusting the distance between the common mode inductor and the Y capacitor.

[0009] Optionally, the upper surface metal layer comprises: a positive electrode metal layer, an alternating current electrode metal layer, a negative electrode metal layer, an upper bridge arm switch tube driving signal metal layer, an upper bridge arm switch tube driving signal loop metal layer, a lower bridge arm switch tube driving signal metal layer, a lower bridge arm switch tube driving signal loop metal layer, and a Y capacitor grounding metal layer, wherein the decoupling capacitor is connected between the positive electrode metal layer and the negative electrode metal layer, the Y capacitor comprises a first Y capacitor and a second Y capacitor, the first Y capacitor is connected between the positive electrode metal layer and the Y capacitor grounding metal layer, and the second Y capacitor is connected between the Y capacitor grounding metal layer and the negative electrode metal layer.

[0010] Optionally, the upper bridge arm switch tube chip is anti-parallelly connected to the upper bridge arm diode chip, and the lower bridge arm switch tube chip is anti-parallelly connected to the lower bridge arm diode chip, wherein the upper bridge arm switch tube chip and the lower bridge arm switch tube chip are driven by Kelvin driving.

[0011] The power drain of the upper bridge arm switch tube chip is connected to the positive electrode metal layer through welding, the power source is connected to the alternating current electrode metal layer through a bonding wire, the gate is connected to the upper bridge arm switch tube driving signal metal layer through a bonding wire, and the source is connected to the upper bridge arm switch tube driving signal loop metal layer through a bonding wire.

[0012] The power drain of the lower bridge arm switch tube chip is connected to the alternating current electrode metal layer through welding, the power source is connected to the negative electrode metal layer through a bonding wire, the gate is connected to the lower bridge arm switch tube driving signal metal layer through a bonding wire, and the source is connected to the lower bridge arm switch tube driving signal loop metal layer through a bonding wire.

[0013] The bottom electrode of the upper bridge arm diode chip is connected to the positive electrode metal layer through welding, and the top electrode is connected to the alternating current electrode metal layer through a bonding wire; and the bottom electrode of the lower bridge arm diode chip is connected to the alternating current electrode metal layer through welding, and the top electrode is connected to the negative electrode metal layer through a bonding wire.

[0014] Optionally, the main power loop formed by the upper bridge arm switch tube chip, the upper bridge arm diode chip, the lower bridge arm switch tube chip, and the lower bridge arm diode chip is close to the driving loop formed by the upper bridge arm switch tube driving signal metal layer, the upper bridge arm switch tube driving signal loop metal layer, the lower bridge arm switch tube driving signal metal layer, and the lower bridge arm switch tube driving signal loop metal layer.

[0015] Optionally, the power terminal comprises a positive terminal, a negative terminal and an alternating current electrode terminal; one end of the positive terminal is connected with the positive metal layer, and the other end is used as an input or output; one end of the negative terminal is connected with the negative metal layer, and the other end is used as an input or output; one end of the alternating current electrode terminal is connected with the alternating current electrode metal layer, and the other end is used as an input.

[0016] Optionally, one end of the positive terminal of the terminal inductor and the negative terminal of the terminal inductor is connected with the positive metal layer and the negative metal layer respectively, and the other end is used as an input.

[0017] Optionally, the positive terminal, the positive terminal of the terminal inductor, the positive metal layer, the upper bridge arm switch tube chip, the alternating current electrode metal layer, the lower bridge arm diode chip, the negative metal layer, the negative terminal of the terminal inductor and the negative terminal constitute one commutation loop of the half-bridge branch; the positive terminal, the positive terminal of the terminal inductor, the positive metal layer, the upper bridge arm diode chip, the alternating current electrode metal layer, the lower bridge arm switch tube chip, the negative metal layer, the negative terminal of the terminal inductor and the negative terminal constitute another commutation loop of the half-bridge branch.

[0018] Optionally, the middle insulating layer of the DBC insulating substrate is an AlN insulating material, and the upper surface metal layer and the lower surface metal layer are high-conductivity materials.

[0019] The application has the following beneficial effects:

[0020] (1) The integrated EMI filter scheme provided by the application uses a flat ring-shaped ferrite magnetic core to surround the input terminal to form a common mode inductor, places the common mode above a Y capacitor, adjusts the coupling coefficient of the coupling inductors of the two branches by adjusting the distance between the lower terminal of the common mode inductor and the Y capacitor, thereby reducing the overall parasitic inductance of the Y capacitor branch, and greatly improving the filtering effect of the EMI filter;

[0021] (2) The power module of the integrated EMI filter provided by the application sets the common mode inductor and the Y capacitor on the same DBC substrate, wherein the common mode inductor is composed of an input terminal and a flat ring-shaped ferrite magnetic core, has a very small volume, and improves the overall integration. Integrating the common mode EMI filter inside the power module reduces the parasitic inductance caused by the interconnection of the common mode EMI filter and the power module, and improves the high-frequency characteristics of the common mode filter;

[0022] (3) The power module of the integrated EMI filter provided by the application adopts a Kelvin connection mode for the upper bridge arm drive metal layer and the lower bridge arm drive metal layer, effectively reduces the common source inductance, thereby reducing the coupling effect between the drive circuit and the power circuit, and improving the stability of the drive;

[0023] (4) The power module of the integrated EMI filter provided by the application adopts a compact layout and a main power loop sequential arrangement mode, the main power loop formed by the upper and lower bridge arm switch tube chips and the anti-parallel diodes thereof is close to the drive loop formed by the upper and lower bridge arm drive metal layers, the length of the bonding wire is shortened, and the parasitic inductance caused by the lead wire is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description only constitute some embodiments of the application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0025] Figure 1 It is a whole structure schematic diagram of the integrated EMI filter's half-bridge type power module structure with terminal inductor of the embodiment of the application.

[0026] Figure 2 It is a plane schematic diagram of the DBC substrate in the half-bridge type power module structure of the embodiment of the application.

[0027] Figure 3 It is a device position schematic diagram in the half-bridge type power module structure of the embodiment of the application.

[0028] Figure 4 It is a bonding wire position schematic diagram in the half-bridge type power module structure of the embodiment of the application.

[0029] Figure 5 It is a module structure schematic diagram after removing the terminal inductor in the half-bridge type power module structure of the embodiment of the application.

[0030] Figure 6 It is an integrated EMI filter schematic diagram with terminal inductor in the half-bridge type power module structure of the embodiment of the application.

[0031] Figure 7 It is a whole structure schematic diagram of the DBC lower layer insulating substrate and copper layer in the half-bridge type power module structure of the embodiment of the application.

[0032] Figure 8 It is a half-bridge circuit topology schematic diagram corresponding to the structure provided by the embodiment of the application.

[0033] Figure 9 It is a half-bridge circuit topology schematic diagram with the integrated EMI filter corresponding to the structure provided by the embodiment of the application.

[0034] Wherein: 1 - positive electrode metal layer, 2 - alternating current electrode metal layer, 3 - negative electrode metal layer, 4 - upper bridge arm switch tube driving signal metal layer, 5 - upper bridge arm switch tube driving signal loop metal layer, 6 - lower bridge arm switch tube driving signal metal layer, 7 - lower bridge arm switch tube driving signal loop metal layer, 8 - Y capacitor grounding point metal layer, 9 - positive electrode terminal, 10 - negative electrode terminal, 11 - alternating current electrode terminal, 12 - upper bridge arm switch tube chip, 13 - upper bridge arm diode chip, 14 - lower bridge arm switch tube chip, 15 - lower bridge arm diode chip, 16 - decoupling capacitor, 17 - first Y capacitor, 18 - second Y capacitor, 19 - positive electrode terminal of terminal inductor, 20 - negative electrode terminal of terminal inductor, 21 - annular ferrite magnetic core of terminal inductor, 22 - bonding wire, 22a-22p - bonding wires a-p, 23 - middle insulating layer, 24 - lower surface metal layer. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0036] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0037] In view of the technical bottlenecks that the existing SiC power module has insufficient common mode electromagnetic interference (CM EMI) suppression and it is difficult to comprehensively optimize the parasitic parameters in the high-frequency switching scenario, the present embodiment proposes a half-bridge type power module structure integrated with a terminal inductor EMI filter, which comprises: a DBC insulating substrate comprising an upper surface metal layer, a middle insulating layer 23 and a lower surface metal layer 24, the upper surface metal layer being arranged with an upper bridge arm switch tube chip 12, an upper bridge arm diode chip 13, a lower bridge arm switch tube chip 14, a lower bridge arm diode chip 15, a decoupling capacitor 16, a Y capacitor and a power terminal;

[0038] A common mode inductor is arranged above the Y capacitor, and the common mode inductor is composed of an annular ferrite magnetic core 21 of a terminal inductor, a positive electrode terminal 19 of the terminal inductor and a negative electrode terminal 20 of the terminal inductor, wherein the coupling coefficient of the coupling inductor is adjusted by adjusting the distance between the common mode inductor and the Y capacitor.

[0039] Specifically, the embodiment significantly reduces high-frequency EMI noise by innovative structure and electromagnetic coupling optimization. Specifically, the annular ferrite core 21 of the terminal inductor is arranged around the terminal as a common-mode inductor, and the multi-layer ceramic capacitor (MLCC) with a capacitance of 10nF is coupled by compact layout to realize parasitic inductance coupling, and the coupling coefficient is optimized by finite element simulation, so as to offset the parasitic inductance of the Y capacitor branch, make the equivalent inductance close to zero, and enhance the filtering effect in the frequency band of 20-100 MHz. In the filter structure design, the common-mode inductor is placed above the Y capacitor, and the coupling coefficient is adjusted by adjusting the distance between the lower part of the power terminal and the Y capacitor. In addition, the power module integrates the EMI filter circuit, which is directly embedded in the DBC substrate to shorten the connection path and avoid introducing additional parasitic parameters by external leads; the driving signal adopts Kelvin connection mode to improve the stability of the switching signal.

[0040] Specifically, the common-mode inductor is placed above the Y capacitor, and the two are arranged closely to realize parasitic inductance coupling.

[0041] Further, the upper surface metal layer includes: a positive electrode metal layer 1, an alternating current electrode metal layer 2, a negative electrode metal layer 3, an upper bridge arm switch tube driving signal metal layer 4, an upper bridge arm switch tube driving signal loop metal layer 5, a lower bridge arm switch tube driving signal metal layer 6, a lower bridge arm switch tube driving signal loop metal layer 7, and a Y capacitor ground metal layer 8. The decoupling capacitor 16 is connected between the positive electrode metal layer 1 and the negative electrode metal layer 3. The Y capacitor includes a first Y capacitor 17 and a second Y capacitor 18. The first Y capacitor 17 is connected between the positive electrode metal layer 1 and the Y capacitor ground metal layer 8. The second Y capacitor 18 is connected between the Y capacitor ground metal layer 8 and the negative electrode metal layer 3.

[0042] Further, the upper bridge arm switch tube chip 12 is anti-parallelly connected with the upper bridge arm diode chip 13, and the lower bridge arm switch tube chip 14 is anti-parallelly connected with the lower bridge arm diode chip 15. The upper bridge arm switch tube chip 12 and the lower bridge arm switch tube chip 14 are driven in a Kelvin mode.

[0043] The power drain of the upper bridge arm switch tube chip 12 is connected to the positive electrode metal layer 1 by welding, the power source is connected to the alternating current electrode metal layer 2 by a bonding wire 22, the gate is connected to the upper bridge arm switch tube driving signal metal layer 4 by a bonding wire 22, and the source is connected to the upper bridge arm switch tube driving signal loop metal layer 5 by a bonding wire 22.

[0044] The power drain of the lower bridge arm switch tube chip 14 is connected to the alternating current electrode metal layer 2 by welding, the power source is connected to the negative electrode metal layer 3 by a bonding wire 22, the gate is connected to the lower bridge arm switch tube driving signal metal layer 6 by a bonding wire 22, and the source is connected to the lower bridge arm switch tube driving signal loop metal layer 7 by a bonding wire 22.

[0045] The bottom electrode of the upper bridge arm diode chip 13 is connected to the positive electrode metal layer 1 by soldering, and the top electrode is connected to the AC electrode metal layer 2 by bonding wire 22; the bottom electrode of the lower bridge arm diode chip 15 is connected to the AC electrode metal layer 2 by soldering, and the top electrode is connected to the negative electrode metal layer 3 by bonding wire 22.

[0046] Specifically, the drivers of the upper bridge arm switching transistor chip 12 and the lower bridge arm switching transistor chip 14 both adopt Kelvin connection to reduce the common source inductance.

[0047] Furthermore, the main power circuit composed of the upper bridge arm switch chip 12, the upper bridge arm diode chip 13, the lower bridge arm switch chip 14, and the lower bridge arm diode chip 15 is close to the drive circuit composed of the upper bridge arm switch drive signal metal layer 4, the upper bridge arm switch drive signal circuit metal layer 5, the lower bridge arm switch drive signal metal layer 6, and the lower bridge arm switch drive signal circuit metal layer 7.

[0048] Furthermore, the power terminals include a positive terminal 9, a negative terminal 10, and an AC electrode terminal 11; one end of the positive terminal 9 is connected to the positive electrode metal layer 1, and the other end serves as an input or output; one end of the negative terminal 10 is connected to the negative electrode metal layer 3, and the other end serves as an input or output; one end of the AC electrode terminal 11 is connected to the AC electrode metal layer 2, and the other end serves as an input.

[0049] Furthermore, one end of the positive terminal 19 and the negative terminal 20 of the terminal inductor are connected to the positive metal layer 1 and the negative metal layer 3 respectively, and the other end serves as the input.

[0050] Furthermore, the positive terminal 9, the positive terminal 19 of the terminal inductor, the positive metal layer 1, the upper bridge arm switching transistor chip 12, the AC electrode metal layer 2, the lower bridge arm diode chip 15, the negative metal layer 3, the negative terminal 20 of the terminal inductor, and the negative terminal 10 constitute one commutation circuit of the half-bridge branch; the positive terminal 9, the positive terminal 19 of the terminal inductor, the positive metal layer (1), the upper bridge arm diode chip (13), the AC electrode metal layer 2, the lower bridge arm switching transistor chip (14), the negative metal layer 3, the negative terminal 20 of the terminal inductor, and the negative terminal 10 constitute another commutation circuit of the half-bridge branch.

[0051] Furthermore, the intermediate insulating layer 23 of the DBC insulating substrate is made of AlN insulating material, and the upper and lower surface metal layers 24 are made of highly conductive materials.

[0052] The following is combined with Figures 1 to 7 Further explanation of this implementation:

[0053] like Figure 1As shown, a half-bridge power module structure integrating an EMI filter with terminal inductors includes a DBC insulating substrate, a switching transistor chip and a diode chip, terminals, a decoupling capacitor, a Y capacitor, and a terminal inductor. The DBC insulating substrate includes an upper surface metal layer, a middle insulating layer 23, and a lower surface metal layer 24. The common-mode inductor is composed of a toroidal ferrite core 21 of the terminal inductor surrounding the first positive terminal 19 and the first negative terminal 20 of the terminal inductor. The common-mode inductor is placed above the Y capacitor, and the two are closely arranged to achieve parasitic inductive coupling.

[0054] The upper surface metal layer of the substrate on the DBC, such as Figure 2 The structure includes: positive electrode metal layer 1, AC electrode metal layer 2, negative electrode metal layer 3, upper bridge arm switch drive signal metal layer 4, upper bridge arm switch drive signal circuit metal layer 5, lower bridge arm switch drive signal metal layer 6, lower bridge arm switch drive signal circuit metal layer 7, and Y capacitor grounding metal layer 8; the lower surface metal layer does not participate in the electrical circuit configuration.

[0055] The positions of the internal chips, decoupling capacitors, and Y capacitors in the integrated filter are shown in the figure. The upper bridge arm switching transistor chip 12 and the upper bridge arm diode chip 13 are placed in the positive metal layer 1, the lower bridge arm switching transistor chip 14 and the lower bridge arm diode chip 15 are placed in the AC electrode metal layer, the decoupling capacitor 16 is connected between the positive and negative metal layers, the Y capacitor 17 is connected between the positive metal layer and the Y capacitor ground metal layer, and the Y capacitor 18 is connected between the Y capacitor ground metal layer and the negative metal layer.

[0056] The upper bridge arm switching transistor chip 12 and its anti-parallel upper bridge arm diode chip 13 are arranged horizontally at intervals. The power drain and source of the upper bridge arm switching transistor chip 12 are respectively connected to the positive electrode metal layer 1 and the AC electrode metal layer 2.

[0057] The upper arm switching transistor chip 12 is driven by Kelvin, and its gate and source are connected to the upper arm switching transistor drive signal metal layer 4 and the upper arm switching transistor drive signal loop metal layer 5, respectively.

[0058] The lower bridge arm switching transistor chip 14 and its anti-parallel lower bridge arm diode chip 15 are arranged horizontally at intervals. The power drain and source of the lower bridge arm switching transistor chip 14 are connected to the AC electrode metal layer 2 and the negative electrode metal layer 3, respectively.

[0059] The lower bridge arm switching transistor chip 14 is driven by Kelvin, and its gate and source are connected to the lower bridge arm switching transistor drive signal metal layer 6 and the lower bridge arm switching transistor drive signal loop metal layer 7, respectively.

[0060] The toroidal ferrite core 21 of the terminal inductor surrounds the positive terminal 19 and the negative terminal 20 of the terminal inductor to form a terminal common mode inductor. One end of the positive terminal 19 and the negative terminal 20 of the terminal inductor are connected to the positive metal layer 1 and the negative metal layer 3 respectively, and the other end is used as the input.

[0061] The first Y capacitor 17 is connected to the positive electrode metal layer 1 and the Y capacitor grounding point metal layer.

[0062] The second Y capacitor 18 is connected to the Y capacitor grounding metal layer and the negative electrode metal layer 3.

[0063] Decoupling capacitor 16 is connected to positive metal layer 1 and negative metal layer 3.

[0064] Figure 5 The module structure after removing the terminal inductors is shown, including: upper bridge arm switching transistor chips 12 and their anti-parallel diode chips arranged horizontally at intervals, positive electrode metal layer 1, AC electrode metal layer 2, upper bridge arm switching transistor drive signal metal layer 4, upper bridge arm switching transistor drive signal circuit metal layer 5, lower bridge arm switching transistor chips and their anti-parallel diode chips arranged horizontally at intervals, negative electrode metal layer 3, lower bridge arm switching transistor drive signal metal layer 6, lower bridge arm switching transistor drive signal circuit metal layer 7, positive terminal 9, negative terminal 10, AC electrode terminal 11, terminal common mode inductor, first Y capacitor 17, Y capacitor grounding point metal layer 8, second Y capacitor 18, and decoupling capacitor 16;

[0065] The bottom drain electrode and positive metal layer 1 of the upper bridge arm switching transistor chip 12 are connected by welding, and the top source electrode and AC electrode metal layer are connected by bonding wire.

[0066] The top gate and source of the upper arm switch chip 12 are connected to the upper arm switch drive signal metal layer 4 and the upper arm switch drive signal circuit metal layer 5 respectively via bonding wire 22.

[0067] The bottom electrode of the upper bridge arm switching transistor chip 12 is connected to the positive electrode metal layer by welding, and the top electrode is connected to the AC electrode metal layer 2 by bonding wire.

[0068] The bottom drain electrode and AC electrode metal layer 2 of the lower bridge arm switching transistor chip 14 are connected by welding, and the top source electrode and negative electrode metal layer are connected by bonding wire.

[0069] The top gate and source of the lower bridge arm switch chip 14 are connected to the lower bridge arm switch drive signal metal layer 6 and the lower bridge arm switch drive signal circuit metal layer 7 respectively via bonding wires.

[0070] The bottom electrode of the lower bridge arm switching transistor chip 14 is connected to the AC electrode metal layer in parallel with the lower bridge arm diode chip 15 by welding, and the top electrode is connected to the negative electrode metal layer by bonding wire.

[0071] One electrode of the first Y capacitor 17 is connected to the positive metal layer 1, and the other electrode is connected to the Y capacitor grounding metal layer 8.

[0072] One electrode of the second Y capacitor 18 is connected to the Y capacitor grounding metal layer 8, and the other electrode is connected to the negative electrode metal layer 3.

[0073] One electrode of the decoupling capacitor 16 is connected to the positive metal layer 1, and the other electrode is connected to the negative metal layer 3.

[0074] like As shown, the metal layers inside the module are connected to the chip via bonding wires 22. The bottom drain electrode of the upper bridge arm switch chip 12 is soldered to the positive metal layer 1, and the top gate electrode and source electrode are connected to the corresponding upper bridge arm switch drive signal metal layer 4 and upper bridge arm switch drive signal circuit metal layer 5 via bonding wires 22g and 22h, respectively. The source electrode is connected to the AC electrode metal layer 2 via bonding wires 22d-22f. The bottom electrode of the upper bridge arm diode chip 13 is soldered to the positive metal layer 1, and the top electrode is connected to the AC electrode metal layer 2 via bonding wires 22a-22c. Similarly, the bottom drain electrode of the lower bridge arm switch chip 14 is soldered to the AC electrode metal layer 2, and the top electrode is connected to the AC electrode metal layer 2 via bonding wires 22a-22c. The gate and source electrodes are connected to the lower bridge arm switch drive signal metal layer 6 and the lower bridge arm switch drive signal circuit metal layer 7 via bonding lines 22i and 22j, respectively. The source electrodes are connected to the negative electrode pad 3 via bonding line 22k-m. The bottom electrode of the lower bridge arm diode chip 15 is connected to the AC electrode metal layer 2 by soldering, and the top electrode is connected to the negative electrode metal layer 3 via bonding line 22n-p. The drive signal connection circuits of the upper bridge arm switch chip 12 and the lower bridge arm switch chip 14 of the power switch implement the Kelvin connection method, decoupling the drive circuit from the power circuit, effectively reducing the common source inductance, and enhancing the stability of the system.

[0075] like As shown, the power terminals are connected to the metal layers by soldering. The positive terminal 9 is connected to the positive metal layer 1 by soldering, the negative terminal 10 is connected to the negative metal layer 3 by soldering, and the AC electrode terminal 11 is connected to the AC electrode metal layer 2 by soldering.

[0076] Integrated EMI filters with terminal inductors, such as , As shown. The positive terminal 19 of the terminal inductor is connected to the positive metal layer 1 by soldering, and the negative terminal 20 of the terminal inductor is connected to the negative metal layer 3 by soldering. The positive terminal 19 and the negative terminal 20 of the terminal inductor pass through the toroidal ferrite core 21 of the terminal inductor to form a terminal common-mode inductor for an integrated common-mode filter. The first Y capacitor 17 and the second Y capacitor 18 are placed below the positive terminal 19 and the negative terminal 20 of the terminal inductor, respectively, to achieve a coupling effect. Adjusting the distance between the lower part of the terminal and the Y capacitor changes the coupling coefficient of the parasitic inductance of the common-mode inductor branch and the Y capacitor branch, reducing the total parasitic inductance of the Y capacitor branch, thereby effectively enhancing the filtering effect of the EMI filter.

[0077] like The diagram shows the intermediate insulating layer 23 and the lower surface metal layer 24. Neither of them participates in the electrical circuit connection. The lower surface metal layer is used to connect the heat dissipation module.

[0078] Figure 9 This is a schematic diagram of the half-bridge circuit topology with integrated EMI filter corresponding to the packaging structure provided in this embodiment. The structure of the half-bridge circuit is similar to... Figures 1 to 8 Correspondingly, a terminal inductor is formed by the upper positive metal layer 1 of the DBC, the upper bridge arm switch drive signal metal layer 4, the upper bridge arm switch drive signal circuit metal layer 5, the lower bridge arm switch drive signal metal layer 6, the lower bridge arm switch drive signal circuit metal layer 7, the AC electrode metal layer 2, the negative metal layer 3, the upper bridge arm switch chip 12 and the upper bridge arm diode chip 13, the lower bridge arm switch chip 14 and the lower bridge arm diode chip 15, the decoupling capacitor 16, the first Y capacitor 17, the second Y capacitor 18, the positive terminal 19 of the terminal inductor, the negative terminal 20 of the terminal inductor, the toroidal ferrite core 21 of the terminal inductor, and the electrical connections between them.

[0079] This embodiment employs a flat, toroidal ferrite core surrounding the input terminals to form a common-mode inductor. This common-mode inductor is placed above the Y capacitor in a compact layout to achieve parasitic inductive coupling. Finite element simulation is used to optimize the coupling coefficient, thereby offsetting the total parasitic inductance of the Y capacitor branch and significantly enhancing the filtering effect in the 20-100 MHz frequency band. By integrating the common-mode inductor and Y capacitor onto the same DBC substrate, the common-mode EMI filter is highly integrated within the power module, minimizing its size and significantly reducing the parasitic inductance introduced by the interconnection between the filter and the module, thus improving the high-frequency characteristics of the common-mode filter. Using a Kelvin connection between the upper and lower bridge arm drive metal layers effectively reduces common-source inductance, lowers the coupling effect between the drive circuit and the power circuit, and improves drive stability. Simultaneously, the compact layout and sequential arrangement of the main power circuit shorten the bonding wire length, reducing the parasitic inductance introduced by the leads.

[0080] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and improvements made to the technical solutions of the present invention by those skilled in the art without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A half-bridge power module structure integrating an EMI filter with terminal inductors, characterized in that, include: The DBC insulating substrate includes an upper surface metal layer, an intermediate insulating layer (23) and a lower surface metal layer (24). The upper surface metal layer is arranged with an upper bridge arm switch chip (12), an upper bridge arm diode chip (13), a lower bridge arm switch chip (14), a lower bridge arm diode chip (15), a decoupling capacitor (16), a Y capacitor, and power terminals. A common-mode inductor is placed above the Y capacitor. The common-mode inductor is composed of a toroidal ferrite core (21) of a terminal inductor surrounding the positive terminal (19) and the negative terminal (20) of the terminal inductor. The coupling coefficient of the coupling inductor is adjusted by adjusting the distance between the common-mode inductor and the Y capacitor.

2. The half-bridge power module structure with integrated terminal inductor for EMI filters according to claim 1, characterized in that, The upper surface metal layer includes: a positive electrode metal layer (1), an AC electrode metal layer (2), a negative electrode metal layer (3), an upper bridge arm switch drive signal metal layer (4), an upper bridge arm switch drive signal circuit metal layer (5), a lower bridge arm switch drive signal metal layer (6), a lower bridge arm switch drive signal circuit metal layer (7), and a Y capacitor grounding metal layer (8). The decoupling capacitor (16) is connected between the positive electrode metal layer (1) and the negative electrode metal layer (3). The Y capacitor includes a first Y capacitor (17) and a second Y capacitor (18). The first Y capacitor (17) is connected between the positive electrode metal layer (1) and the Y capacitor grounding point metal layer (8), and the second Y capacitor (18) is connected between the Y capacitor grounding point metal layer (8) and the negative electrode metal layer (3).

3. The half-bridge power module structure with integrated terminal inductor for EMI filters according to claim 2, characterized in that, The upper bridge arm switching transistor chip (12) is connected in antiparallel to the upper bridge arm diode chip (13), and the lower bridge arm switching transistor chip (14) is connected in antiparallel to the lower bridge arm diode chip (15). The upper bridge arm switching transistor chip (12) and the lower bridge arm switching transistor chip (14) are driven by Kelvin. The power drain of the upper bridge arm switch chip (12) is connected to the positive electrode metal layer (1) by soldering, the power source is connected to the AC electrode metal layer (2) by bonding wire (22), the gate is connected to the upper bridge arm switch drive signal metal layer (4) by bonding wire (22), and the source is connected to the upper bridge arm switch drive signal circuit metal layer (5) by bonding wire (22). The power drain of the lower bridge arm switch chip (14) is connected to the AC electrode metal layer (2) by soldering, the power source is connected to the negative electrode metal layer (3) by bonding wire (22), the gate is connected to the lower bridge arm switch drive signal metal layer (6) by bonding wire (22), and the source is connected to the lower bridge arm switch drive signal circuit metal layer (7) by bonding wire (22). The bottom electrode of the upper bridge arm diode chip (13) is connected to the positive electrode metal layer (1) by welding, and the top electrode is connected to the AC electrode metal layer (2) by bonding wire (22); the bottom electrode of the lower bridge arm diode chip (15) is connected to the AC electrode metal layer (2) by welding, and the top electrode is connected to the negative electrode metal layer (3) by bonding wire (22).

4. The half-bridge power module structure with integrated terminal inductor for EMI filter according to claim 3, characterized in that, The main power circuit formed by the upper bridge arm switch chip (12), the upper bridge arm diode chip (13), the lower bridge arm switch chip (14), and the lower bridge arm diode chip (15) is close to the drive circuit formed by the upper bridge arm switch drive signal metal layer (4), the upper bridge arm switch drive signal circuit metal layer (5), the lower bridge arm switch drive signal metal layer (6), and the lower bridge arm switch drive signal circuit metal layer (7).

5. The half-bridge power module structure with integrated terminal inductor for an EMI filter according to claim 2, characterized in that, The power terminals include a positive terminal (9), a negative terminal (10), and an AC electrode terminal (11); one end of the positive terminal (9) is connected to the positive electrode metal layer (1), and the other end serves as an input or output; one end of the negative terminal (10) is connected to the negative electrode metal layer (3), and the other end serves as an input or output; one end of the AC electrode terminal (11) is connected to the AC electrode metal layer (2), and the other end serves as an input.

6. The half-bridge power module structure with integrated terminal inductor for an EMI filter according to claim 5, characterized in that, The positive terminal (19) and negative terminal (20) of the terminal inductor are connected at one end to the positive metal layer (1) and the negative metal layer (3) respectively, and the other end serves as the input.

7. The half-bridge power module structure with integrated terminal inductor for an EMI filter according to claim 6, characterized in that, The positive terminal (9), the positive terminal (19) of the terminal inductor, the positive metal layer (1), the upper bridge arm switch chip (12), the AC electrode metal layer (2), the lower bridge arm diode chip (15), the negative metal layer (3), the negative terminal (20) of the terminal inductor, and the negative terminal (10) constitute one commutation circuit of the half-bridge branch; the positive terminal (9), the positive terminal (19) of the terminal inductor, the positive metal layer (1), the upper bridge arm diode chip (13), the AC electrode metal layer (2), the lower bridge arm switch chip (14), the negative metal layer (3), the negative terminal (20) of the terminal inductor, and the negative terminal (10) constitute another commutation circuit of the half-bridge branch.

8. The half-bridge power module structure with integrated terminal inductor for an EMI filter according to claim 1, characterized in that, The intermediate insulating layer (23) of the DBC insulating substrate is made of AlN insulating material, and the upper surface metal layer and the lower surface metal layer (24) are made of high-conductivity materials.

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