Air exhaust panel assembly, and process equipment and process method of semiconductor device

Abstract

The invention discloses an air exhaust panel assembly, and process equipment and a process method of a semiconductor device. The air exhaust panel assembly comprises an air exhaust panel which is located above the air exhaust opening in the reaction cavity and is provided with an air exhaust hole; and the driving motor is connected with the air exhaust panel and is used for adjusting the posture of the air exhaust panel, so that the air exhaust flow resistance is reduced during air exhaust in a deposition process, and the air exhaust flow resistance is increased during air exhaust in a cleaning process. The air suction flow field in the cavity can be changed so as to meet different process requirements, the problem that air pressure distribution in the cavity is eccentric in the air suction process of the cleaning process can be avoided, the cleaning time can be shortened, and the productivity of a machine table can be improved.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, specifically to a vacuum panel assembly, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium. Background Technology

[0002] High-density plasma chemical vapor deposition (HDP CVD) equipment is widely used in semiconductor manufacturing. Compared to other CVD equipment, HDP CVD equipment differs significantly in plasma density, pressure range, deposition rate, and application scenarios. Regarding the pressure range, HDP CVD equipment requires pressure control at the millitor level during deposition, e.g., 1–40 mtorr. Other CVD equipment typically only needs pressure control at the torper level, e.g., less than 10 torr. Therefore, HDP CVD equipment demands higher precision in pressure control during deposition. The pressure used during the cleaning process is similar to that of other equipment during deposition, typically below 10 torr. Therefore, a single evacuation system cannot simultaneously meet the different evacuation requirements of HDP CVD equipment in both deposition and cleaning processes.

[0003] The common practice to address this is to use a bottom extraction system for the deposition process and a side extraction system for the cleaning process. However, side extraction during the cleaning process can lead to an unbalanced gas pressure distribution within the chamber, increasing the cleaning time and reducing machine throughput.

[0004] To address the issue of pressure eccentricity within the side extraction chamber, existing technologies have proposed a solution that adjusts the movement or position of the airflow streamline within the reaction chamber by controlling the duration of the opening and closing phases of the extraction valve. This involves ensuring the cleaning gas is evenly distributed within the chamber during the valve's closed period before opening the valve for extraction, thereby improving the cleaning effect. However, this approach increases the duration of the valve's closed phase during cleaning, which also prolongs the cleaning time and reduces machine productivity.

[0005] In order to solve the above-mentioned problems in the existing technology, there is an urgent need in the field for an improved air extraction technology that can change the airflow field in the cavity to meet different process requirements. This technology can not only avoid the problem of eccentric air pressure distribution in the cavity during the air extraction process of the cleaning process, but also shorten the cleaning time and increase the machine's productivity. Summary of the Invention

[0006] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0007] To overcome the aforementioned deficiencies in the prior art, the present invention provides an air extraction panel assembly, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium, which can change the air extraction field within the cavity to meet different process requirements. This not only avoids the problem of eccentric air pressure distribution within the cavity during the air extraction process of the cleaning process, but also shortens the cleaning time and increases the machine's productivity.

[0008] Specifically, the above-mentioned air extraction panel assembly provided according to the first aspect of the present invention includes: an air extraction panel located above an air extraction port in a reaction chamber, having an air extraction hole thereon; and a drive motor connected to the air extraction panel for adjusting the posture of the air extraction panel to reduce the air extraction resistance during air extraction in the deposition process and increase the air extraction resistance during air extraction in the cleaning process.

[0009] Furthermore, the process apparatus for the semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber having a heating plate inside and an exhaust port at the lower part of the chamber; a vacuum pump connected to the exhaust port for evacuating air during process processing within the chamber; an exhaust panel assembly as provided in the first aspect of the present invention, located above the exhaust port; and a controller configured to: adjust the orientation of the exhaust panel in the exhaust panel assembly to reduce the exhaust flow resistance during exhaust in the deposition process and increase the exhaust flow resistance during exhaust in the cleaning process.

[0010] Furthermore, according to a third aspect of the present invention, a method for manufacturing a semiconductor device is provided, implemented using the process equipment for the semiconductor device as described in the second aspect of the present invention. The method includes the following steps: introducing a deposition gas into a reaction chamber to perform a deposition process; adjusting the orientation of a suction panel during the deposition process to reduce the suction flow resistance during gas extraction; introducing a cleaning gas into the reaction chamber to perform a cleaning process; and adjusting the orientation of the suction panel during the cleaning process to increase the suction flow resistance during gas extraction.

[0011] Furthermore, according to a fourth aspect of the present invention, a computer-readable storage medium is provided having computer instructions stored thereon. When the computer instructions are executed by a processor, a process method for implementing the semiconductor device described above according to the third aspect of the present invention is implemented. Attached Figure Description

[0012] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0013] Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown.

[0014] Figure 2A A front structural schematic diagram of an air extraction panel assembly provided according to some embodiments of the present invention is shown.

[0015] Figure 2B An exploded schematic diagram of an air extraction panel assembly provided according to some embodiments of the present invention is shown.

[0016] Figure 3A A schematic diagram of the posture of the extraction panel during the extraction of gas in a deposition process according to some embodiments of the present invention is shown.

[0017] Figure 3B A schematic diagram of the posture of the air extraction panel during air extraction in a cleaning process provided according to some embodiments of the present invention is shown.

[0018] Figure 4 A flowchart of a process method for a semiconductor device provided according to some embodiments of the present invention is shown.

[0019] Figure 5A The diagram shows the airflow velocity distribution cloud map during the evacuation of the reaction chamber for the cleaning process in the prior art.

[0020] Figure 5B A cloud map showing the airflow velocity distribution during the evacuation of a cleaning process within a reaction chamber, provided according to some embodiments of the present invention, is shown.

[0021] Figure 6A This diagram shows the airflow distribution cloud map during the evacuation of the reaction chamber for the cleaning process in the prior art.

[0022] Figure 6B An airflow distribution cloud map is shown during the evacuation of a cleaning process within a reaction chamber, according to some embodiments of the present invention.

[0023] Figure label:

[0024] 100 process equipment;

[0025] 110 reaction chamber;

[0026] 120 heating plate;

[0027] 130 air extraction port;

[0028] 131 Bottom air extraction port;

[0029] 132 Side air extraction port;

[0030] 140 molecular pump;

[0031] 141 Valve Box;

[0032] 150 dry pump;

[0033] 151 pre-piping assembly;

[0034] 200 extraction panel assembly;

[0035] 210 fume extraction panel;

[0036] 211 air extraction port;

[0037] 212 baffle structure;

[0038] 220 drive motor;

[0039] 230 fixed bracket;

[0040] 241 First suction plate;

[0041] 242 Second suction plate;

[0042] 310 and 320 gas streamlines;

[0043] Steps S410~S440. Detailed Implementation

[0044] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0045] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0046] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0047] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0048] As mentioned above, side-drafting during the cleaning process can lead to an eccentric distribution of gas pressure within the chamber, thereby increasing the cleaning process time and reducing machine productivity. To address this eccentric gas pressure issue, existing technologies have proposed a solution that adjusts the movement or position of the airflow streamline within the reaction chamber by controlling the duration of the opening and closing phases of the extraction valve. This involves ensuring the cleaning gas is evenly distributed within the chamber during the valve's closed period before opening the valve for extraction, thus improving the cleaning effect. However, this solution increases the duration of the valve's closed phase during cleaning, which also prolongs the cleaning time and reduces machine productivity.

[0049] To address the aforementioned problems in the prior art, this invention provides an air extraction panel assembly, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium. These components can alter the air extraction field within the cavity to meet different process requirements. This not only avoids the problem of eccentric air pressure distribution within the cavity during the air extraction process of the cleaning process but also shortens the cleaning time and increases machine productivity.

[0050] In some non-limiting embodiments, the vacuum panel assembly provided in the first aspect of the present invention can be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention, and used to implement the process method of the semiconductor device provided in the third aspect of the present invention.

[0051] Specifically, in some non-limiting embodiments, the computer-readable storage medium described above in the fourth aspect of the present invention stores a computer program product thereon. The computer program product includes computer instructions. A processor may be connected to the memory and configured to execute the computer instructions included in the computer program product to implement a process method for a semiconductor device as provided in the third aspect of the present invention.

[0052] The working principle of the above-described vacuum panel assembly will be described below with reference to embodiments of semiconductor device process equipment and methods. Those skilled in the art will understand that these embodiments of semiconductor device process equipment and methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating modes or functions of the vacuum panel assembly. Similarly, the vacuum panel assembly is also only one non-limiting implementation provided by the present invention, and does not limit all operating modes or functions of the semiconductor device process equipment, or the implementing entities and execution order of the steps in the semiconductor device process methods.

[0053] Please refer to Figure 1 , Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown.

[0054] like Figure 1 As shown, in some embodiments of the present invention, the semiconductor device process equipment 100 mainly includes a reaction chamber 110, a vacuum pump, a vacuum extraction panel assembly 200, and a controller. The reaction chamber 110 is equipped with a heating plate for supporting the wafer for processing. Optionally, the processing may include, but is not limited to, deposition, etching, and cleaning processes. A vacuum extraction port 130 is located at the bottom of the reaction chamber 110. The vacuum extraction port 130 can be connected to an external vacuum pump for evacuating air during processing within the chamber. For example, during deposition and etching processes, the vacuum pump can evacuate the reaction chamber 110 to the corresponding target pressure requirements. Furthermore, during chamber cleaning processes, the vacuum pump can also extract and vent the byproducts of the cleaning reaction within the reaction chamber 110.

[0055] Furthermore, in some optional embodiments, the process performed within the reaction chamber 110 can be an HDPCVD process. To meet its specific application requirements, the corresponding semiconductor device process equipment 100 can adopt a dual exhaust pipe structure.

[0056] Specifically, such as Figure 1 As shown, a bottom evacuation port 131 and a side evacuation port 132 may be included below the reaction chamber 110. The bottom evacuation port 131 can be connected to a molecular pump 140. Compared to other deposition processes, HDP CVD processes typically require a first vacuum level in the millitor (mtorr) range due to the low deposition pressure. However, dry pumps based on mechanically compressed air cannot achieve this high vacuum level. To address this, a magnetically levitated molecular pump 140 can be used to evacuate the chamber, utilizing a high-speed rotor to impact the transport gas, thereby raising the pressure within the reaction chamber 110 to a first vacuum level in the millitor range during the deposition process. In this embodiment, the molecular pump 240 can enhance the vacuum level within the chamber during the deposition process.

[0057] Furthermore, a valve box 141, such as a pendulum valve, may be included in the connecting pipeline between the bottom vent 131 and the molecular pump 140. Since the molecular pump 140 has an upper limit on its venting pressure, if the pressure inside the reaction chamber 110 exceeds 0.13 torr, the excessive pressure will impact the blades of the magnetically levitated molecular pump 140, causing it to stop working. Therefore, in this embodiment, the valve box 141 can determine whether it is in an open or closed state based on the type of process being performed, thereby protecting the molecular pump 140.

[0058] Continue as Figure 1 As shown, the side vent 132 can be connected to the dry pump 150 via the pre-piping assembly 151. Because the pressure level during the chamber cleaning process is close to the pressure level required for other normal deposition processes, the deposition and cleaning processes in the HDPCVD process equipment 100 cannot be pressure-controlled using the same pump set.

[0059] Specifically, during the HDP CVD deposition process, the process equipment 100 can employ bottom evacuation. In this case, valve box 141 is open, and the molecular pump 140 evacuates the reaction chamber 110 to a first vacuum level of millitorr for HDP CVD deposition. After the deposition process, during the chamber cleaning process, the pressure inside the process equipment 100 needs to be increased. At this time, valve box 141 can be closed to protect the magnetically levitated molecular pump 140. Then, through the forepump assembly 151 and the dry pump 150, side evacuation is used to evacuate the pressure inside the reaction chamber 110 to a second vacuum level of Torr.

[0060] Continue as Figure 1 As shown, within the reaction chamber 110, the extraction panel assembly 200 can be positioned above the extraction port 130. Furthermore, the controller in the process equipment 100 can be configured to adjust the orientation of the extraction panel in the extraction panel assembly 200, reducing the extraction flow resistance during deposition process extraction and increasing the extraction flow resistance during cleaning process extraction. The extraction panel assembly 200 can achieve a dynamic seal with the valve box 141 below the chamber via a rubber ring.

[0061] Specifically, please combine Figure 2A and Figure 2B A shared understanding. Figure 2A A front structural schematic diagram of an air extraction panel assembly provided according to some embodiments of the present invention is shown. Figure 2B An exploded schematic diagram of an air extraction panel assembly provided according to some embodiments of the present invention is shown.

[0062] like Figure 2A and Figure 2B As shown, in some embodiments, the suction panel assembly 200 may include a suction panel 210 and a drive motor 220. The suction panel 210 may be located above the suction port 130 in the reaction chamber 110, and has a suction hole 211 thereon. The drive motor 220 may be connected to the suction panel 210 via a fixing bracket 230. The drive motor 220 may be used to adjust the posture of the suction panel 210.

[0063] Furthermore, when different processes are carried out in the reaction chamber 110 of the process equipment 100, a control signal can be sent to the drive motor 220 through the controller of the host computer to drive the drive motor 220 to rotate, thereby causing the exhaust panel 210 to rotate together. Through the rotatable exhaust panel 210, the exhaust air resistance is reduced during the deposition process and increased during the cleaning process.

[0064] Please refer to Figure 3A , Figure 3A A schematic diagram of the posture of the extraction panel during the extraction of gas in a deposition process according to some embodiments of the present invention is shown.

[0065] like Figure 3A As shown, in some embodiments, during the HDP CVD deposition process, bottom evacuation is used in the reaction chamber 110. The valve box 141 is opened, and the gas in the reaction chamber 110 is rapidly discharged via the molecular pump 140, achieving a high initial vacuum level within the chamber. By using bottom evacuation during the deposition process, gas eccentricity during evacuation is avoided, thus improving the compositional consistency and thickness uniformity of the deposited film.

[0066] However, during bottom evacuation, since the deposition process is underway, adding an evacuation panel 210 between the heating plate 120 and the evacuation port 130 increases flow resistance and affects the deposition rate. Therefore, during the deposition process, it is necessary to minimize the evacuation flow resistance caused by adding the evacuation panel 210.

[0067] In this regard, such as Figure 3A As shown, the drive motor 220 can drive the suction panel 210 to rotate to a first angle to reduce the angle α between the gas streamline 310 and the suction panel 210 during suction, thereby reducing the suction flow resistance during the deposition process. During the deposition process, reducing the suction flow resistance allows the chamber to reach and stabilize at the target pressure more quickly, thus extending the residence time of the deposition gas on the wafer surface and reducing reaction source waste. Furthermore, high flow resistance leads to large pressure fluctuations within the chamber, easily causing localized pressure unevenness. Therefore, reducing the suction flow resistance during the deposition process can stabilize the pressure within the chamber, ensuring the uniformity of the gas concentration and ultimately improving deposition efficiency.

[0068] Since the bottom vent 131 is located inside the vent 130, and the vent 130 is located below the vent panel 210, the gas streamline 310 during the venting process typically flows perpendicularly towards the vent 130. Here, "gas streamline" refers to a curve describing the gas distribution and flow direction within the cavity. Optionally, the first angle can be greater than 0° and less than or equal to 90°. Furthermore, the closer the first angle is to 90°, the smaller the angle α between the gas streamline 310 and the vent panel 210, and the smaller the gas flow resistance of the vent panel 210 during the deposition process.

[0069] In some preferred embodiments, such as Figure 3A As shown, the suction panel 210 can be rotated to 90° via the drive motor 220. At this time, when bottom suction is performed inside the reaction chamber 110, the angle α between the suction panel 210 and the gas flow line 310 is 0°, and the two are parallel, thereby minimizing the suction flow resistance and thus improving the deposition rate.

[0070] Please refer to Figure 3B , Figure 3B A schematic diagram of the posture of the air extraction panel during air extraction in a cleaning process provided according to some embodiments of the present invention is shown.

[0071] like Figure 3BAs shown, in some embodiments, after the HDP CVD deposition process is completed, a chamber cleaning process can be performed to remove the deposited film on non-target areas within the chamber. The deposition and cleaning processes can be performed alternately. For example, a cleaning process can be performed after a preset number of deposition cycles. During the chamber cleaning process, the reaction chamber 110 is evacuated using a side-assisted evacuation method. The valve box 141 is closed, and the gas in the reaction chamber 110 is discharged via the dry pump 150, achieving the lower second vacuum level required for cleaning. By using side-assisted evacuation during the cleaning process, damage to the molecular pump 140 due to excessively high gas pressure within the chamber can be avoided.

[0072] like Figure 3B As shown, the drive motor 220 can drive the suction panel 210 to rotate to a second angle, thereby increasing the angle α between the gas streamline 320 and the suction panel 210 during suction, thus improving the suction flow resistance during the deposition process. During the cleaning process, by increasing the suction flow resistance, the residence time of the cleaning gas in the reaction chamber 110 can be extended, which helps the cleaning gas diffuse to all areas within the chamber. For example, the cleaning gas has sufficient time to diffuse to the lower surface of the heating plate 120 for cleaning. Therefore, this embodiment can reduce the probability of eccentric gas pressure distribution within the chamber during the suction process of the cleaning process. Furthermore, since the dry pump 150 and the suction panel 210 continuously maintain suction action within the chamber during the cleaning process, this embodiment can also shorten the cleaning time, thereby increasing machine productivity.

[0073] Similarly, since the side exhaust port 132 is located inside the exhaust port 130, and the exhaust port 130 is located below the exhaust panel 210, the gas streamline 320 during the exhaust process typically flows perpendicularly towards the side exhaust port 132. Here, "gas streamline" refers to a curve describing the gas distribution and flow direction within the cavity. Optionally, the second angle can be greater than or equal to 0° and less than 90°. Furthermore, the closer the second angle is to 0°, the larger the angle α between the gas streamline 320 and the exhaust panel 210, and the greater the gas flow resistance of the exhaust panel 210 during the deposition process.

[0074] In some preferred embodiments, such as Figure 3B As shown, the suction panel 210 can be rotated to 0° via the drive motor 220. At this time, when the reaction chamber 110 is performing side suction, the angle α between the suction panel 210 and the gas flow line 320 is 0°, and the two are perpendicular, which can maximize the suction flow resistance, thereby prolonging the residence time of the clean gas in the chamber and improving the uniformity of the airflow distribution in the chamber.

[0075] In the embodiments provided by the present invention, the controller in the host computer can drive the suction panel 210 to different postures according to different process steps, thereby ensuring that the purpose of adjusting the pressure distribution inside the cavity is achieved during the cleaning process without affecting the exhaust speed during the deposition process. In other words, the suction panel assembly 200 provided by the present invention can both increase the deposition rate during the deposition process and improve the uniformity of the flow field inside the cavity during the cleaning process. Moreover, compared with other driving methods, the motor driving method in the above embodiments has the characteristics of precise control, high efficiency and energy saving, safety and reliability, and strong adaptability.

[0076] Continue back Figure 2A As shown, in some embodiments, the extraction holes 211 can be distributed in the edge region of the extraction panel 210, while a baffle structure 212 can be provided in the middle region. By providing extraction holes 211 in the edge region of the extraction panel 210, the uniformity of side extraction can be improved. By providing a baffle structure 212 in the middle region of the extraction panel 210, some airflow can be blocked from being quickly extracted during the cleaning process, thereby extending its residence time in the cavity. In contrast, the traditional hollow extraction ring structure would cause most of the gas to flow out from the middle, failing to extend the residence time of the cleaning gas in the cavity, thus reducing the cleaning effect in the cavity.

[0077] In this embodiment, by combining the suction port 211 and the baffle structure 212 in the suction panel 210, the uniformity of suction can be improved and the eccentricity of the gas pressure in the cavity can be reduced during continuous side suction. Therefore, the defect of the prior art, which requires continuously closing the valve to improve the uniformity of the distribution of clean gas in the cavity, resulting in a decrease in the cleaning rate, can be overcome.

[0078] like Figure 2B As shown, in some embodiments, the extraction panel 210 can be composed of several detachable extraction plates joined together with screws. For example, in... Figure 2B In the illustrated embodiment, the extraction panel 210 can be formed by splicing a first extraction plate 241 and a second extraction plate 242. Furthermore, the extraction plates can include various different specifications. Moreover, extraction plates of different specifications can have extraction holes with different aperture sizes and / or pore densities. By selecting extraction plates of different specifications to splice the extraction panel 210, the uniformity of extraction for process gases with different flow rates can be adjusted.

[0079] like Figure 2B As shown, optionally, the first suction plate 241 and the second suction plate 242 can be symmetrical suction plates of the same specification with the same pore size and pore density. The axis of symmetry of the first suction plate 241 and the second suction plate 242 is the center of the side suction port 132.

[0080] In the embodiments provided by the present invention, by modularly splicing the exhaust panel 210, it is not only easy to disassemble and replace, but also allows for the modification of exhaust panels of different specifications according to the cleaning speed requirements of the machine. By combining exhaust holes 211 with different hole diameters and / or hole densities, the exhaust requirements of different processes can be quickly and conveniently adapted.

[0081] Furthermore, in some other embodiments of the present invention described above, by combining the modular air extraction plate design with the air extraction panel 210 driven by the drive motor 220, the specifications of the air extraction plate can be changed according to the air extraction requirements of different cleaning processes, thereby achieving the purpose of regulating the uniformity of airflow at different flow rates within the cavity.

[0082] This concludes the basic introduction to the main structure of the above-mentioned vacuum panel assembly and semiconductor device process equipment provided by one aspect of the present invention. Next, the working principle of the above-mentioned vacuum panel assembly will be specifically explained in conjunction with the semiconductor device process method provided by another aspect of the present invention.

[0083] Please refer to Figure 4 , Figure 4 A flowchart of a process method for a semiconductor device provided according to some embodiments of the present invention is shown.

[0084] like Figure 4 As shown, in some embodiments of the present invention, the semiconductor device manufacturing process can be implemented via the aforementioned semiconductor device manufacturing equipment 100. The semiconductor device manufacturing process may include steps S410 to S440. First, step S410 may be performed: a deposition gas is introduced into the reaction chamber to perform a deposition process.

[0085] In some alternative embodiments, the deposition process may include high-density plasma chemical vapor deposition (HDP CVD). HDP CVD is an advanced thin-film deposition technology primarily used for depositing insulating dielectric films in semiconductor manufacturing, and is particularly adept at filling high aspect ratio structures.

[0086] Then, step S420 can be performed: during the deposition process, adjust the orientation of the extraction panel to reduce the air resistance during the extraction process.

[0087] Specifically, such as Figure 3A As shown, in some embodiments, during the HDP CVD deposition process, bottom evacuation can be used to evacuate the reaction chamber 110. The controller controls the drive motor 220 to rotate the evacuation panel 210 to a first angle, thereby reducing the angle α between the gas flow line 310 and the evacuation panel 210 during evacuation, thus reducing the air resistance during the deposition process.

[0088] Preferably, the suction panel 210 can be rotated to 90° via the drive motor 220 so that when bottom suction is performed in the cavity, the suction panel 210 and the gas flow line 310 are parallel to each other, thereby minimizing the suction flow resistance and improving the deposition rate.

[0089] Next, valve box 141 is opened, and molecular pump 140 can pump the cavity to a first vacuum level of millitor, which meets the requirements of HDP CVD process. By using bottom evacuation during the deposition process, the problem of gas eccentricity during evacuation is avoided, thus improving the compositional consistency and thickness uniformity of the deposited film.

[0090] Furthermore, in some optional embodiments, after several of the above deposition processes are completed, a chamber cleaning process can be performed to remove the deposited film on non-target areas within the chamber.

[0091] like Figure 4 As shown, the next step can be step S430: introduce cleaning gas into the reaction chamber to perform a cleaning process.

[0092] In some alternative embodiments, the cleaning gas can be a fluorine-containing gas. Fluorine radicals are generated through plasma activation, which react with the cavity wall deposits (mainly silicides) to produce volatile products (such as SiF4) that are then discharged. Additionally, chlorine-containing or inert gases may be used to assist cleaning in special scenarios.

[0093] Then, step S440 can be performed: During the cleaning process, adjust the orientation of the air extraction panel to increase the air extraction resistance during the cleaning process.

[0094] Specifically, such as Figure 3B As shown, in some embodiments, during the chamber deposition process, the reaction chamber 110 can be evacuated by side evacuation. The controller controls the drive motor 220 to rotate the evacuation panel 210 to a second angle, thereby increasing the angle α between the gas flow line 320 and the evacuation panel 210 during evacuation, thus improving the airflow resistance during the deposition process.

[0095] Preferably, the suction panel 210 can be rotated to 0° via the drive motor 220. At this time, when the reaction chamber 110 is evacuated from the side, the angle α between the suction panel 210 and the gas flow line 320 is 0°, and the two are perpendicular, which can maximize the suction resistance and extend the residence time of the clean gas in the chamber, thereby improving the uniformity of the airflow distribution in the chamber.

[0096] Subsequently, the dry pump 150 can evacuate the cavity to a second vacuum level, meeting the requirements of the chamber cleaning process. By using side evacuation during the cleaning process, the bottom molecular pump 140 can be protected from damage. Furthermore, by rotating the evacuation panel 210 to 0°, not only can the probability of uneven pressure distribution within the cavity during the cleaning process be reduced, but the cleaning time can also be shortened, thereby increasing the machine's productivity.

[0097] Next, please refer to Figure 5A and Figure 5B , Figure 5A The diagram shows the airflow velocity distribution cloud map during the evacuation of the reaction chamber for the cleaning process in the prior art. Figure 5B A cloud map showing the airflow velocity distribution during the evacuation of a cleaning process within a reaction chamber, provided according to some embodiments of the present invention, is shown.

[0098] exist Figure 5A In the illustrated embodiment, the physical center coordinates within the reaction chamber are (0 mm, 251.6 mm, -30 mm). In the prior art, in a reaction chamber without the extraction panel assembly 200, during the cleaning process extraction, the coordinates of the minimum airflow velocity within the chamber are (-5.05 mm, 251.6 mm, -31.6 mm), and the difference between these coordinates and the center of the chamber is... The values ​​are (-5.05mm, 0mm, -1.6mm). And... Figure 5B In the illustrated embodiment, after adding the air extraction panel assembly 200 to the reaction chamber, during the air extraction process of the cleaning process, the coordinates of the minimum airflow velocity in the chamber are (-0.845mm, 251.6mm, -31mm), and the coordinate difference between this and the center of the chamber is... The values ​​are (-0.845mm, 0mm, -1mm).

[0099] pass Figure 5A and Figure 5B Using the provided coordinates of the minimum gas velocity as a criterion, it can be determined that within the reaction chamber 110, including the extraction panel assembly 200 provided by this invention, the center of the region with the lowest gas velocity (i.e., the center of the gas cloud map) is closer to the physical center of the chamber, meaning it is closer to the physical center of the chamber. This indicates that the gas deviation within the chamber is lower, and the airflow distribution is more balanced.

[0100] In addition, you can refer to further Figure 6A and Figure 6B . Figure 6A This diagram shows the airflow distribution cloud map during the evacuation of the reaction chamber for the cleaning process in the prior art. Figure 6B An airflow distribution cloud map is shown during the evacuation of a cleaning process within a reaction chamber, according to some embodiments of the present invention.

[0101] Combination Figure 6A and Figure 6B As shown, by comparing the airflow distribution at the same location, it can be determined that the gas distribution uniformity is better in the reaction chamber 110 provided by the present invention, which includes the air extraction panel assembly 200, while in the prior art, the airflow distribution is more biased towards the foreline outlet side in the reaction chamber without the air extraction panel assembly 200.

[0102] In summary, the present invention provides an air extraction panel assembly, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium, which can change the air extraction field in the cavity to meet different process requirements. It can not only avoid the problem of eccentric air pressure distribution in the cavity during the air extraction process of the cleaning process, but also shorten the cleaning time and improve the machine's productivity.

[0103] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0104] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps are described above in a generalized manner in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0105] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or performed using a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternatives, it may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration.

[0106] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0107] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0108] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vacuum panel assembly, characterized in that, include: The air extraction panel is located above the air extraction port inside the reaction chamber and has an air extraction hole on it. as well as A drive motor is connected to the extraction panel to adjust the posture of the extraction panel, so that it reduces the air resistance during the deposition process and increases the air resistance during the cleaning process.

2. The air extraction panel assembly as claimed in claim 1, characterized in that, The drive motor drives the extraction panel to rotate to a first angle during the deposition process, so as to reduce the angle between the gas streamline and the extraction panel during extraction.

3. The air extraction panel assembly as described in claim 2, characterized in that, The first angle is greater than 0° and less than or equal to 90°.

4. The air extraction panel assembly as claimed in claim 1, characterized in that, The drive motor drives the extraction panel to rotate to a second angle during the cleaning process, thereby increasing the angle between the gas flow line and the extraction panel during extraction.

5. The air extraction panel assembly as claimed in claim 4, characterized in that, The second angle is greater than or equal to 0° and less than 90°.

6. The air extraction panel assembly as claimed in claim 1, characterized in that, The air extraction holes are distributed along the edge of the air extraction panel, while a baffle structure is provided in the middle area.

7. The air extraction panel assembly as claimed in claim 1, characterized in that, The air extraction panel is composed of several detachable air extraction plates, wherein the air extraction plates have air extraction holes with different aperture sizes and / or hole densities.

8. A semiconductor device manufacturing apparatus, characterized in that, include: The reaction chamber is equipped with a heating plate inside and an exhaust port is located at the bottom of the chamber. A vacuum pump, connected to the extraction port, is used to extract air during process handling within the cavity; The air extraction panel assembly as described in any one of claims 1 to 7 is located above the air extraction port; as well as The controller is configured to adjust the orientation of the extraction panel in the extraction panel assembly to reduce the extraction flow resistance during extraction in the deposition process and increase the extraction flow resistance during extraction in the cleaning process.

9. The process equipment as described in claim 8, characterized in that, The cavity includes a bottom evacuation port and a side evacuation port at the bottom. The bottom evacuation port is connected to a molecular pump and is used to pump the pressure in the reaction cavity to a first vacuum level of millitor during the deposition process. The side evacuation port is connected to a dry pump and is used to pump the pressure in the reaction cavity to a second vacuum level of Torr during the cleaning process.

10. A process method for a semiconductor device, characterized in that, The process method is implemented using the process equipment of the semiconductor device as described in claim 8 or 9, and includes the following steps: Deposition gas is introduced into the reaction chamber to carry out the deposition process; During the deposition process, the orientation of the extraction panel is adjusted to reduce the air resistance during extraction. A cleaning gas is introduced into the reaction chamber to perform a cleaning process; and During the cleaning process, the orientation of the air extraction panel is adjusted to increase the air resistance during air extraction.

11. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the process method of the semiconductor device as described in claim 10 is implemented.

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