Multi-cavity radio frequency control system, semiconductor device process equipment and method

Abstract

The invention discloses a multi-cavity radio frequency control system, and process equipment and method of a semiconductor device. The radio frequency control system comprises a first group of radio frequency regulation and control units which comprise a first radio frequency power supply and a first power divider and are used for providing the same target radio frequency signal for lower electrodes in a plurality of process cavities in a first group; and the second group of radio frequency regulation and control units comprises a second radio frequency power supply and a second power divider and is used for providing the same target radio frequency signal for the lower electrodes in the plurality of process cavities in the second group, and the plurality of process cavities in the first group and the plurality of process cavities in the second group are arranged at intervals. According to the invention, the consistency of radio frequency parameter matching between multiple chambers can be improved, the risk of radio frequency crosstalk between adjacent chambers can be reduced, and directionality of the uniformity of coating in each chamber can be avoided, so that the consistency of the process effect of the multi-chamber semiconductor process is integrally improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a multi-chamber radio frequency control system, a semiconductor device process equipment, a semiconductor device process method, and a computer readable storage medium. BACKGROUND

[0002] In the process of semiconductor, the addition of radio frequency system can reduce the temperature requirement of chamber reaction and improve the reaction rate. Therefore, the radio frequency system is an indispensable subsystem in the semiconductor equipment. The multi-chamber semiconductor process equipment has a natural high efficiency advantage in production efficiency, and is widely used in high-capacity storage, display and other industries.

[0003] At present, the radio frequency system in the multi-chamber semiconductor process equipment is independently set. Each chamber corresponds to a set of independent radio frequency system, including radio frequency power supply, impedance matching device, adjuster, filter device, etc. However, in the existing semiconductor process radio frequency system, the common problem is that if there are multiple chambers in the equipment, a corresponding number of multiple independent radio frequency systems are needed, which will lead to large equipment space occupation and bulky equipment size. In addition, multiple independent radio frequency systems do not exchange data directly within the system, but need to exchange data through communication network between each other. The communication network between multiple stations is complex, the communication link is long, and the nodes are many. Moreover, the power value fluctuates frequently between multiple stations, which will cause a certain lag in the adjustment of the radio frequency system. Therefore, not only is the radio frequency matching difficult between chambers, but the process uniformity is difficult to guarantee, and the large number of radio frequency components also leads to high cost and complex maintenance.

[0004] To solve the above problems, the prior art makes multiple process chambers share a set of radio frequency system. However, when adjacent chambers share the same radio frequency system, crosstalk phenomenon is easy to occur. The adjacent chambers sharing the same radio frequency system will affect each other due to the shared link coupling and spatial electromagnetic coupling. The signal fluctuation of one chamber will be transmitted to the adjacent chamber through the shared link or spatial radiation, thereby disturbing the normal radio frequency state of the adjacent chamber and causing the radio frequency parameters of each other to be disorderly. In addition, sharing the same radio frequency system for any chamber also easily leads to the directional uniformity of the film coating.

[0005] In order to solve the above problems existing in the prior art, there is an urgent need in the field for a multi-chamber radio frequency control technology, which not only can improve the consistency of radio frequency parameter matching between multiple chambers, but also can reduce the risk of radio frequency crosstalk between adjacent chambers, and at the same time can avoid the directional uniformity of the film coating in each chamber, so as to improve the consistency of the process effect of the multi-chamber semiconductor process as a whole. SUMMARY

[0006] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0007] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a multi-chamber radio frequency control system, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium, which not only can improve the consistency of radio frequency parameter matching between multi-chambers, but also can reduce the risk of radio frequency crosstalk between adjacent chambers, and avoid the directionality of the uniformity of the film coating in each chamber, thereby improving the consistency of the process effect of the multi-chamber semiconductor process as a whole.

[0008] Specifically, according to the first aspect of the present application, the above-mentioned multi-chamber radio frequency control system comprises: a first group of radio frequency control units, including a first radio frequency power supply and a first power divider, configured to provide a same target radio frequency signal to the lower electrodes in a plurality of process chambers in a first group; and a second group of radio frequency control units, including a second radio frequency power supply and a second power divider, configured to provide the same target radio frequency signal to the lower electrodes in a plurality of process chambers in a second group, wherein the plurality of process chambers in the first group and the plurality of process chambers in the second group are arranged at intervals.

[0009] In addition, according to the second aspect of the present application, the above-mentioned semiconductor device processing equipment comprises: a plurality of process chambers, which are divided into a first group and a second group, and the plurality of process chambers in the first group and the plurality of process chambers in the second group are arranged at intervals; and the above-mentioned multi-chamber radio frequency control system provided by the first aspect of the present application, configured to provide a target radio frequency signal to each of the process chambers for plasma processing.

[0010] Further, the above semiconductor device processing method according to the third aspect of the present application is implemented by using the above semiconductor device processing apparatus according to the second aspect of the present application, and the semiconductor device processing method comprises the following steps: dividing the process cavities in the semiconductor device processing apparatus into a first group and a second group according to a grouping rule, wherein the process cavities in the first group are arranged apart from the process cavities in the second group; connecting a first group of radio frequency regulating units to the process cavities in the first group and providing the same target radio frequency signal to the lower electrodes in the process cavities in the first group; connecting a second group of radio frequency regulating units to the process cavities in the second group and providing the same target radio frequency signal to the lower electrodes in the process cavities in the second group; and performing plasma processing in each of the process cavities in the first group and the second group based on the target radio frequency signal.

[0011] Further, the fourth aspect of the present application also provides a computer readable storage medium having computer instructions stored thereon. The computer instructions are executed by a processor to implement the above semiconductor device processing method according to the third aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0012] The above features and advantages of the present application will be better understood through reading the detailed description of the embodiments of the present application in conjunction with the following drawings, in which: the components are not necessarily drawn to scale, and components of similar or identical nature or function can have the same or similar reference labels.

[0013] Figure 1 A structural schematic diagram of a semiconductor device processing apparatus according to some embodiments of the present application is shown.

[0014] Figure 2 A structural schematic diagram of a multi-chamber radio frequency control system according to some embodiments of the present application is shown.

[0015] Figure 3 A structural schematic diagram of a multi-chamber radio frequency control system according to some other embodiments of the present application is shown.

[0016] Figure 4 A structural schematic diagram of radio frequency hardware in a chamber according to some embodiments of the present application is shown.

[0017] Figure 5 A flowchart of a semiconductor device processing method according to some embodiments of the present application is shown.

[0018] REFERENCE SIGNS:

[0019] 100 semiconductor device processing apparatus;

[0020] 110 first chamber;

[0021] 120 second chamber;

[0022] 130 third chamber;

[0023] 140 fourth chamber;

[0024] 150 fifth chamber;

[0025] 160 sixth chamber;

[0026] 170, 301 first group;

[0027] 180, 302 second group;

[0028] 200 radio frequency control system;

[0029] 210 first group of radio frequency control units;

[0030] 211 first radio frequency power supply;

[0031] 212 first power divider;

[0032] 213 first impedance matcher;

[0033] 214 first lower electrode adjuster;

[0034] 215~227, 411 upper electrode adjuster;

[0035] 220 second group of radio frequency control units;

[0036] 221 second radio frequency power supply;

[0037] 222 second power divider;

[0038] 223 second impedance matcher;

[0039] 224 second lower electrode adjuster;

[0040] 310, 320 process chamber;

[0041] 410 shower plate;

[0042] 420 heating disc;

[0043] 421 lower electrode adjuster;

[0044] S510~S540 steps. DETAILED DESCRIPTION

[0045] The advantages and features of the present application will become apparent from the following description of the embodiments of the present application, taken in conjunction with the accompanying drawings. Although the description of the present application will be in the context of its preferred embodiments, the present application can be carried out in a variety of ways and should not be limited to those explicitly set forth herein. Rather, the present application can be practiced in a variety of embodiments and should not be limited to only those explicitly set forth herein. Like reference numerals are used to indicate like elements throughout the following description. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present application. It will be evident to one skilled in the art, however, that the present application can be practiced without some or all of these specific details. In other instances, well known processes and techniques have not been described in detail in order to avoid unnecessarily obscuring the present application. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. It is further understood that the use of relational terms such as first, second and third, and the like, are used solely to distinguish one from another entity without necessarily implying a sequence or order.

[0046] In the description of the present application, it is necessary to note that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0047] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the section and the related drawings. Such relative terms are only for the convenience of description, and do not mean that the device described thereby should be manufactured or operated in a specific orientation, and therefore should not be understood as a limitation of the present application.

[0048] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first components, regions, layers and / or parts discussed below can be referred to as the second components, regions, layers and / or parts without departing from some embodiments of the present application.

[0049] As described above, but the existing problem of the radio frequency system of the semiconductor process is that the equipment occupies a large space and the equipment is bulky. In addition, not only is the radio frequency matching difficult between chambers, but the process uniformity is difficult to guarantee, and a large number of radio frequency components also lead to high cost and complex maintenance. For this reason, in the prior art, a plurality of process chambers share a set of radio frequency systems. However, when adjacent chambers share the same radio frequency system, crosstalk phenomenon is prone to occur. In addition, sharing the same radio frequency system for any chamber also easily leads to the directionality of the uniformity of the film coating.

[0050] In order to solve the above problems in the prior art, the application provides a multi-chamber radio frequency control system, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium, which can not only improve the consistency of radio frequency parameter matching between multi-chambers, but also reduce the risk of radio frequency crosstalk between adjacent chambers, and avoid the directionality of the uniformity of film coating in each chamber, thereby improving the consistency of the process effect of multi-chamber semiconductor process as a whole.

[0051] In some non-limiting embodiments, the above-mentioned multi-chamber radio frequency control system provided by the first aspect of the application can be configured in the above-mentioned semiconductor device processing equipment provided by the second aspect of the application, and used to implement the above-mentioned semiconductor device processing method provided by the third aspect of the application.

[0052] Specifically, in some non-limiting embodiments, the above-mentioned computer readable storage medium provided by the fourth aspect of the application has computer instructions stored thereon. When the computer instructions are executed by a processor, the semiconductor device processing method provided by the third aspect of the application can be implemented.

[0053] The working principle of the above-mentioned multi-chamber radio frequency control system will be described below in combination with some embodiments of semiconductor device processing equipment and its processing method. Those skilled in the art can understand that the embodiments of semiconductor device processing equipment and its processing method are only some non-limiting embodiments provided by the application, which are intended to clearly demonstrate the main idea of the application and provide some specific solutions for the public to implement, rather than to limit all working modes or all functions of the multi-chamber radio frequency control system. Similarly, the multi-chamber radio frequency control system is also only a non-limiting embodiment provided by the application, which does not limit all working modes or all functions of the semiconductor device processing equipment, and the implementation subject and execution order of each step in the semiconductor device processing method.

[0054] Please refer to Figure 1 , Figure 1 Fig. 1 shows a structural schematic diagram of a semiconductor device processing equipment according to some embodiments of the application.

[0055] As Figure 1As shown, in some embodiments of the present application, the semiconductor device processing equipment 100 can include a plurality of process chambers and a multi-chamber RF control system. Each process chamber can include a shower plate and a heating plate. The wafer is supported on the heating plate. The wafer can be processed in the space between the shower plate and the heating plate. Further, the shower plate can be provided with an upper electrode, and the heating plate can be provided with a lower electrode. After the RF power is connected, an electric field can be formed between the two electrodes, so that the process gas in the chamber is ionized to generate plasma, so as to perform plasma process in the process space of the two chambers. Optionally, the plasma process includes but is not limited to plasma deposition process, plasma etching process. Correspondingly, the process gas can be selected from deposition gas (such as SiH4) or etching gas (CF4) and the like.

[0056] The plurality of process chambers can be divided into a first group 170 and a second group 180. The plurality of process chambers in the first group 170 and the plurality of process chambers in the second group 180 can be arranged at intervals. The multi-chamber RF control system can be used to provide target RF signals to each process chamber for corresponding plasma process.

[0057] Preferably, as shown in the embodiment, Figure 1 The semiconductor device processing equipment 100 can include 6 process chambers. The 6-chamber machine can achieve an optimal balance in productivity, flexibility and cost efficiency. Compared with the machine with a low number of chambers (such as 2 or 4), the 6-chamber machine can not only meet the medium-scale production demand, but also integrate multiple steps of process, so that the workpiece does not need to be transported across the equipment, thereby reducing the pollution and environmental fluctuation and improving the product yield. Compared with the machine with a large number of chambers (such as 8 or 12), the cost of the 6-chamber machine is relatively low, and therefore the 6-chamber machine can be applied to cost-sensitive application scenarios.

[0058] Continuing as shown in Figure 1 For the 6 process chambers in the semiconductor device processing equipment 100, the first chamber 110, the third chamber 130 and the fifth chamber 150, which are arranged at intervals of 1 chamber, can be divided into the first group 170, and the remaining second chamber 120, the fourth chamber 140 and the sixth chamber 160, which are arranged at intervals, can be divided into the second group 180.

[0059] In some alternative embodiments, the first chamber 110 and the fourth chamber 140, which are arranged at intervals of 2 chambers, can be divided into a group, the second chamber 120 and the fifth chamber 150 can be divided into a group, and the third chamber 130 and the sixth chamber 160 can be divided into a group.

[0060] Further, it is understood in conjunction with Figure 2 that Figure 2 A structure diagram of a multi-chamber RF control system according to some embodiments of the present application is shown.

[0061] like Figure 2 As shown, in some embodiments, the multi-chamber RF control system 200 may include a first group of RF control units 210 and a second group of RF control units 220. The first group of RF control units 210 may include a first RF power supply 211 and a first power divider 212, used to provide the same target RF signal to the lower electrodes of multiple process chambers within the first group 170. Here, "same target RF signal" refers to target RF signals that are of the same origin, synchronous, and have the same characteristics. Multiple process chambers (first chamber 110, third chamber 130, and fifth chamber 150) within the first group 170 share the same RF power supply, which can eliminate individual differences between multiple RF power supplies from the source, thereby unifying the plasma state and process conditions of each chamber and helping to improve the consistency of process effects in each chamber.

[0062] Similarly, the second group of RF control units 220 may include a second RF power supply 221 and a second power divider 222, for providing the same target RF signal to the lower electrodes in multiple process cavities within the second group 180. The multiple process cavities in the first group 170 and the multiple process cavities in the second group 180 are spaced apart from each other. The target RF signal provided by the second group of RF control units 220 is adjusted to be substantially consistent with the target RF signal provided by the first group of RF control units 210.

[0063] Optionally, such as Figure 2 As shown, each group of RF control units also includes an impedance matching device. For example, a first impedance matching device 213 is disposed between the first RF power supply 211 and the first power divider 212 to match the output impedance of the first RF power supply 211 with the input impedance of the first power divider 212. Similarly, a second impedance matching device 223 can be configured in the same position in the second group of RF control units 220. In this embodiment, the impedance matching device can eliminate the impedance mismatch between the RF power supply and the power divider, ensuring that RF energy is efficiently and without reflection transmitted to the power divider.

[0064] In the above embodiments, a single RF power supply distributes the same RF signal evenly to multiple process cavities (e.g., three) via a power divider. Since the RF signals of all cavities within the same group originate from the same oscillation source and the same power amplification link, the frequency stability, power accuracy, and phase consistency of the signals received by each cavity within the same group can be synchronized. Furthermore, because the cavities sharing the same RF signal are spaced apart, shared link coupling and spatial electromagnetic coupling are reduced, thus significantly reducing the risk of RF crosstalk between adjacent cavities.

[0065] Furthermore, if adjacent chambers are grouped together, the symmetrical arrangement of the physical field during thin film deposition will cause directional variations in coating uniformity. Specifically, with Figure 1 For example, if the first chamber 110, the second chamber 120, and the third chamber 130 located on the same side are divided into a first group, sharing the first group of radio frequency control units, and the fourth chamber 140, the fifth chamber 150, and the sixth chamber 160 located on the other side are divided into a second group, sharing the second group of radio frequency control units, then due to the mirror symmetry of the physical fields in the left and right regions, the energy and density of charged particles (such as deposited ions) in the plasma will form gradient boundaries along the left and right directions. For example, the particle energy in the left region (first group) is higher, while the particle energy in the right region (second group) is lower, or the peak position of the particle distribution in the left and right regions shifts along the left and right directions. The energy and density of the deposited particles directly determine the coating thickness and compactness. The difference in particle characteristics between the left and right regions will cause the coating results (thickness, composition) of the three chambers on the left to tend to be consistent, and the three chambers on the right to also tend to be consistent, but the coating parameters in the left and right chambers will show regular deviations, ultimately resulting in a clear directionality in the coating uniformity along the left and right directions.

[0066] In this regard, in the embodiments provided by the present invention, the field coupling directionality caused by adjacent chambers within the same group can be broken through the spaced grouping. The field distributions of the two staggered layouts can complement each other and cancel each other out, dispersing path differences and coupling interference, thereby eliminating directional deviations in coating uniformity.

[0067] Specifically, after being grouped at intervals (e.g., the first chamber 110, the third chamber 130, and the fifth chamber 150 form the first group, and the second chamber 120, the fourth chamber 140, and the sixth chamber 160 form the second group), the chambers within the same group are separated by the chambers in the other group. Adjacent chambers belong to different RF systems, which physically cuts off the strong coupling path along a single direction within the same group. The RF field radiation and reflection signals of the chambers within the same group are isolated and buffered by the intermediate chambers in different groups, thereby reducing the formation of a field strength gradient along a fixed direction (e.g., horizontally) and making the field distribution more dispersed and uniform. In addition, if the RF field of the first group has a slight distribution deviation due to path differences, for example, the RF field strength of the first chamber 110 is slightly higher, the staggered layout of the second group will cause its deviation direction to be offset from that of the first group, for example, the RF field strength of the second chamber 120 is slightly lower. Overall, the field distribution deviations of the two sets of chambers, when superimposed, do not form a regular deviation in a single direction (such as the previous horizontal gradient), but instead present a uniformly dispersed state, which can ultimately eliminate the directionality of coating uniformity.

[0068] Furthermore, in the above embodiments, in order to reduce the device size, the number of process cavities controlled by a set of radio frequency control units can be increased as much as possible. Theoretically speaking, for Figure 1In the illustrated 6-chamber embodiment, the optimal solution is that a set of RF regulation units directly control 6 process chambers. However, it is technically difficult to operate, and the current technical level cannot meet the demand for such high integration of equipment. Moreover, for more chamber (such as 8-chamber, 12-chamber) machine equipment, the integration difficulty is higher. In view of the practicability of the scheme, in some preferred embodiments of the present application, all chambers in a plurality of process chambers spaced apart by 1 chamber can be divided into a first group 170, and the remaining chambers can be divided into a second group 180, and a set of RF regulation units is provided for each group. Within a reasonable range of technical difficulty, the number of process chambers controlled by a set of RF regulation units can be as large as possible.

[0069] For comparison, as shown in the 6-chamber embodiment, Figure 1 In some optional embodiments, non-adjacent chambers can be divided into two groups, and the chambers in the same group are spaced apart by 2 chambers. For example, the first chamber 110 and the fourth chamber 140 are divided into a group, the second chamber 120 and the fifth chamber 150 are divided into a group, and the third chamber 130 and the sixth chamber 160 are divided into a group. Compared with the above-mentioned three-grouping embodiment, the process equipment 100 needs to increase the placement area of the additional RF regulation unit, which will cause the production rate per unit area to decrease.

[0070] In another optional embodiment, as shown in the 8-chamber process chamber equipment 300, Figure 3 According to the above-mentioned preferred grouping rule, all process chambers can be divided into two groups. All process chambers 310 spaced apart by 1 chamber are divided into a first group 301, and all process chambers 320 spaced apart by 1 chamber are divided into a second group 302, thereby further improving the production rate per unit area and improving the consistency of RF parameter matching between multiple chambers.

[0071] In the above-mentioned embodiment, the power divider can be used to distribute power. The principle is to use a microstrip branch line to build a branch network, and use a quarter-wave microstrip transmission line for impedance matching, so that the impedance of 3 ports is equal to 50 ohms. While branching, the energy transmission is most efficient. As shown in Figure 2 The first power divider 212 and the second power divider 222 can be used for communication between the two groups of RF regulation units. By interacting data in real time, the power distribution between different groups can be matched, thereby improving the RF parameter distribution accuracy between different groups. Further, the power distribution can affect the process result, so that by adjusting the deviation value of the distribution of each process chamber in multiple groups, the process deposition rate can be improved, and the uniformity difference of the film thickness between chambers can be reduced.

[0072] In addition, in the above embodiments, the process directionality can be improved by connecting the radio frequency regulation units to the lower electrodes in each process cavity, and using the radio frequency downward introduction mode. The electric field generated after the radio frequency is applied can accurately pull the plasma ions to vertically bombard the wafer surface, thereby improving the film compactness of the deposition process or the pattern precision of the etching process. Moreover, the radio frequency energy directly acts on the lower side of the wafer, the plasma energy transmission is more concentrated and controllable, and the bombardment damage to the workpiece such as a thin wafer or a sensitive substrate is smaller. The radio frequency upward introduction mode via the shower plate can cause the plasma to spread widely, which is easy to cause damage to the wafer edge.

[0073] Further, in some embodiments, the first radio frequency power supply 211 or the second radio frequency power supply 221 can select a high frequency power supply and / or a low frequency power supply according to different process requirements. For a process scene that requires high plasma density, low ion bombardment energy, process uniformity and low damage, a high frequency power supply can be preferred as the radio frequency power supply. For a process scene that requires strong ion bombardment energy, thick layer processing, or needs to change the physical properties of the material surface, a low frequency power supply can be preferred as the radio frequency power supply. For a process scene that needs to balance high plasma density (to ensure process uniformity) and strong ion bombardment energy (to ensure reaction depth / effect), a high frequency power supply and a low frequency power supply can be preferred as the radio frequency power supply.

[0074] Next, refer to Figure 4 , Figure 4 a structural schematic diagram of radio frequency hardware in a cavity according to some embodiments of the present application is shown.

[0075] It can be understood in combination with Figure 2 and Figure 4 that in some embodiments, a lower electrode adjuster 421 can be included in each process cavity in each group. The input end of each lower electrode adjuster corresponding in the same group can be connected to the same power distributor. For example, the input end of the first lower electrode adjuster 214 can be connected to the first power distributor 212, and the output end can be connected to the heating disc in each process cavity in the first group as the lower electrode, for synchronously adjusting the impedance matching parameters of the multiple process cavities in each group, thereby maximally synchronously improving the radiation power required by the process in each process cavity in the group. The configuration of the second lower electrode adjuster 224 in the second radio frequency regulation unit 220 is the same as that of the above-mentioned first lower electrode adjuster 214 in the first radio frequency regulation unit 210.

[0076] Further, as shown in Figure 4 , in some preferred embodiments, each process cavity in the group can have an upper electrode adjuster 411. The upper electrode adjuster 411 can be connected to the shower plate 410 as the upper electrode, for separately adjusting the capacitive reactance characteristics and potential of the upper electrode in each process cavity. In combination with Figure 2It is understood that the upper electrode adjusters 215, 216, and 217 are respectively installed in the multiple process chambers of the first group. The upper electrode adjusters 225, 226, and 227 are respectively installed in the multiple process chambers of the second group.

[0077] Specifically, such as Figure 4 As shown, the spray plate 410 is connected to the upper electrode adjuster 411. A capacitor and an inductor can be connected in series in the grounding circuit of the spray plate 410 to form an adjustable LC network. The spacing between the capacitor plates, the number of inductor turns, and the position of the inductor in the magnetic core can be adjusted by a servo motor / stepper motor, thereby changing the capacitive reactance characteristics of the upper electrode and making the capacitive reactance of the spray plate circuit conjugate-matched with the RF source impedance, reducing signal reflection.

[0078] In the prior art, after the heating plate 420 introduces a radio frequency (RF) signal, the spray plate 410 is typically directly grounded, with its potential equal to that of the surrounding cavity. In this case, the cavity will induce a parasitic plasma field with the heating plate 420, diverting energy and thus reducing the energy required for the process area between the heating plate 420 and the spray plate 410. Even if the impedance of the heating plate 420 is adjusted, the problem persists if the RF signal is introduced from the spray plate 410. To address this, in the embodiment provided by this invention, by adding an upper electrode adjuster 411, the capacitive reactance characteristics of the spray plate 410 can be altered, creating a potential difference between the spray plate 410 and the surrounding cavity components. For example, reducing the capacitance characteristics of the spray plate 410 can concentrate the electric field between the spray plate 410 and the heating plate 420, thereby weakening the potential between the heating plate 420 and the cavity components, making it insufficient to generate a plasma field, and thus suppressing parasitic plasma. In other words, by adopting the impedance adjustment method of dual regulators, while the heating plate 420 has a lower electrode regulator 421, the impedance adjustment of the spray plate 410 is added, which can solve the problem of plasma field parasitism and poor power distribution between the spray plate 410 and the heating plate 420, so that the RF power can be effectively concentrated in the wafer process area, improving process performance and power conversion efficiency.

[0079] Furthermore, the input power, phase, and impedance of each process cavity within a group can be adjusted using other RF hardware to further improve the uniformity of the plasma field generated in each cavity, thereby enhancing the uniformity and repeatability of the deposited process film thickness. For example, the input power and impedance can be adjusted by changing the capacitance and inductance using a servo motor. Phase adjustment can be achieved by changing the equivalent line length through adjustments to the capacitor array, redundant capacitors, and inductors, thus adjusting the phase angle.

[0080] In the above embodiments, by independently installing the upper electrode adjuster 411 and the lower electrode adjuster 421 in each process cavity, they are brought as close as possible to the end of use, thereby reducing the impact of radio frequency interference on their performance.

[0081] So far, the first aspect of the present application provides the above-mentioned multi-chamber RF control system, and the second aspect provides the above-mentioned semiconductor device processing equipment. In the above-mentioned multi-chamber RF control system 200, the centralized control of the RF of the multiple chambers in each group is realized by the group control mode. The energy of the target RF signal in each group is accurately distributed to the multiple process chambers in the group by the power distributor according to the preset proportion, so as to realize the parameter distribution balance. Each group of RF regulation and control units control the multiple chambers in the group and dynamically adjust the power distribution of the chambers, so as to ensure the uniformity of the RF power, phase and other parameters. Finally, the uniformity and distribution accuracy of the RF parameter distribution among the multiple chambers can be improved.

[0082] In addition, since the multi-chamber RF control system 200 can control multiple chambers at the same time, the number of RF components can be reduced, thereby improving the integration and space utilization rate of the equipment, reducing the demand for external space, and saving costs.

[0083] Next, please refer to Figure 5 , Figure 5 a flowchart of a semiconductor device processing method according to some embodiments of the present application is shown.

[0084] As Figure 5 shown, in some embodiments of the present application, the semiconductor device processing method can include steps S510-S540. First, step S510 can be performed to divide the process chambers in the process equipment into a first group and a second group according to a grouping rule. The grouping rule is to divide all process chambers spaced by a plurality of chambers into the first group, and to divide all process chambers spaced by a plurality of chambers into the second group, so that the multiple process chambers in the first group and the multiple process chambers in the second group are arranged alternately.

[0085] Then, step S520 can be performed to connect the first group of RF regulation and control units to the multiple process chambers in the first group, and to provide the same target RF signal to the lower electrodes in the multiple process chambers in the first group. Subsequently, step S530 can be performed to connect the second group of RF regulation and control units to the multiple process chambers in the second group, and to provide the same target RF signal to the lower electrodes in the multiple process chambers in the second group. Finally, step S540 can be performed to perform plasma processing in each process chamber in the first group and the second group based on the target RF signal.

[0086] Further, as Figure 4As shown, in some embodiments, each process cavity in the group has an upper electrode adjuster connected to the shower plate as the upper electrode, and a lower electrode adjuster connected to the heating disc as the lower electrode. When performing the above step S540, the reactance characteristic and the potential of the upper electrode in each process cavity can be adjusted respectively via the upper electrode adjusters, so that the electric field is concentrated between the shower plate and the heating disc, thereby reducing the parasitic plasma field between the shower plate 410 and the heating disc 420, so that the RF power can be effectively concentrated in the process area of the wafer, thereby improving the process performance and power conversion efficiency.

[0087] In summary, the present application provides a multi-chamber RF control system, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium, which not only improves the consistency of RF parameter matching between multi-chambers, but also reduces the risk of RF crosstalk between adjacent chambers, and avoids the directional uniformity of the coating in each chamber, thereby improving the consistency of the process effect of multi-chamber semiconductor process as a whole.

[0088] Although the above-described methods are illustrated and described as a series of acts for simplicity, it is understood and appreciated that the methods are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that set of acts and other acts not depicted and described herein but which are understood by those skilled in the art. For example, the acts performed during the process of the method can be performed in an order other than that specifically disclosed herein or can be performed concurrently.

[0089] Those skilled in the art will further appreciate that the steps of a method or algorithm described in connection with the embodiments disclosed herein can be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module can reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium can be integral to the processor. The processor and the storage medium can reside in an ASIC. The ASIC can reside in a user terminal. In the alternative, the processor and the storage medium can reside as discrete components in a user terminal.

[0090] In one or more exemplary embodiments, the functions described can be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions can be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage media can be any available media that can be accessed by a computer. By way of example, and not limitation, such computer-readable media can comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Also, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. Disk and disc, as used herein, includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0091] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A multi-chamber radio frequency control system, characterized by, comprising: a first group of RF control units, including a first RF power source and a first power divider, for providing a same target RF signal to lower electrodes in a plurality of process chambers in a first group; and a second group of RF control units, including a second RF power source and a second power divider, for providing the same target RF signal to lower electrodes in a plurality of process chambers in a second group, wherein the plurality of process chambers in the first group are arranged apart from the plurality of process chambers in the second group. The plurality of process chambers in the first group are arranged apart from the plurality of process chambers in the second group by one chamber.

2. The radio frequency control system of claim 1, wherein, Each process chamber in the group includes a lower electrode adjuster, an input of each corresponding lower electrode adjuster in the same group is connected to the same power divider, and an output of each corresponding lower electrode adjuster is connected to a heating plate in each process chamber in the group as the lower electrode, for synchronously adjusting impedance matching parameters of the plurality of process chambers in each group.

3. The radio frequency control system of claim 1, wherein, Each process chamber in the group has an upper electrode adjuster connected to a shower plate as the upper electrode, for adjusting a capacitive reactance characteristic and an electric potential of the upper electrode in each process chamber.

4. The radio frequency control system of claim 3, wherein, Each group of RF control units further includes an impedance matcher arranged between the RF power source and the power divider, for matching an output impedance of the RF power source to an input impedance of the power divider.

5. The radio frequency control system of claim 1, wherein, The first RF power source or the second RF power source includes a high frequency power source and a low frequency power source.

6. The radio frequency control system of claim 1, wherein, comprising:

7. A process apparatus for a semiconductor device, characterized by comprising: a plurality of process chambers, divided into a first group and a second group, wherein the plurality of process chambers in the first group are arranged apart from the plurality of process chambers in the second group; and a multi-chamber RF control system according to any one of claims 1-6, for providing a target RF signal to each process chamber for plasma process treatment. A process equipment using a semiconductor device according to any one of claims 7, the process method comprising the steps of: dividing process chambers in the process equipment into a first group and a second group according to a grouping rule, wherein the plurality of process chambers in the first group are arranged apart from the plurality of process chambers in the second group; 8. A process method for a semiconductor device, characterized by, connecting a first group of RF control units to the plurality of process chambers in the first group, and providing a same target RF signal to lower electrodes in the plurality of process chambers in the first group; connecting a second group of RF control units to the plurality of process chambers in the second group, and providing the same target RF signal to lower electrodes in the plurality of process chambers in the second group; and performing plasma process treatment in each process chamber in the first group and the second group based on the target RF signal. Each process chamber in the group has an upper electrode adjuster connected to a shower plate as the upper electrode, and a lower electrode adjuster connected to a heating plate as the lower electrode, the step of performing plasma process treatment in each process chamber in the first group and the second group based on the target RF signal includes:

9. The process of claim 8, wherein, ​ ​ The capacitance and potential of the upper electrode in each process cavity are adjusted by the upper electrode adjuster, so that the electric field is concentrated between the shower plate and the heating disc.

10. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions, when executed by a processor, implement a process method for a semiconductor device as claimed in claim 8 or 9.

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