Integrated circuit heat dissipation packaging structure and method

Abstract

The invention relates to the technical field of integrated circuit packaging, and discloses an integrated circuit heat dissipation packaging structure and method. The integrated circuit heat dissipation packaging structure comprises a carrier plate, a heat dissipation device and an electroplating bonding layer. A cathode metal layer is arranged on the surface of one side of the carrier plate. The radiator is arranged on one side of the carrier plate. The heat sink includes a cathode metal portion. And the cathode metal part and the cathode metal layer are opposite and are arranged at an interval. And the electroplating bonding layer is formed between the cathode metal part and the cathode metal layer through an electroplating bonding process so as to connect the radiator and the carrier plate. According to the invention, the thermal stress and the thermal resistance can be reduced, and the packaging reliability and the heat dissipation efficiency can be improved.

Description

Technical Field

[0001] This application relates to the field of integrated circuit packaging technology, and for example to an integrated circuit heat dissipation packaging structure and method. Background Technology

[0002] As chip density and packaging integration in integrated circuits continue to increase, the heat flux density of integrated circuits is significantly increasing, which seriously affects the reliability and lifespan of integrated circuits. Since the integrated circuit substrate is the primary means of heat dissipation for its surface devices, natural surface convection alone cannot meet the heat dissipation requirements.

[0003] In related technologies, heat sinks are connected to the surface of integrated circuit substrates by bonding or welding to dissipate heat.

[0004] In the process of implementing the embodiments of this disclosure, at least the following problems were found in the related art: In related technologies, when the heat sink and the surface of the integrated circuit substrate are connected by adhesive bonding, the thermal conductivity of the thermal grease or adhesive material used for bonding is relatively low, increasing the thermal resistance of the package and affecting the efficiency of heat transfer from the heat source to the heat sink. When the heat sink and the surface of the integrated circuit substrate are connected by soldering, the solder needs to undergo high-temperature reflow, which inevitably introduces thermal stress and thermal interfaces into the integrated circuit substrate after high-temperature reflow. This exposes the packaged devices on the surface of the integrated circuit substrate to the adverse effects of high temperatures, reducing package reliability. In addition, the thermal grease or solder can form voids during the curing process, increasing the thermal resistance of the heat dissipation path and affecting heat dissipation efficiency.

[0005] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0006] To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general commentary, nor is it intended to identify key / important components or describe the scope of protection of these embodiments, but rather as a prelude to the detailed description that follows.

[0007] This disclosure provides an integrated circuit heat dissipation packaging structure and method that can reduce thermal stress and thermal resistance, thereby improving packaging reliability and heat dissipation efficiency.

[0008] In some embodiments, an integrated circuit heat dissipation packaging structure is provided, including: a carrier board, on one side of which a cathode metal layer is disposed; a heat sink disposed on one side of the carrier board, the heat sink including a cathode metal portion, the cathode metal portion and the cathode metal layer being opposite to and spaced apart; and an electroplated bonding layer formed between the cathode metal portion and the cathode metal layer by an electroplating bonding process to connect the heat sink and the carrier board.

[0009] Optionally, the surfaces of the cathode metal portion and the cathode metal layer on opposite sides are both planar and parallel; or, the surface of the cathode metal portion facing the cathode metal layer includes a plurality of strip-shaped protrusions and a plurality of strip-shaped grooves arranged side by side, the strip-shaped protrusions and strip-shaped grooves being alternately arranged and connected; the plane formed by the highest points of the plurality of strip-shaped protrusions and the plane formed by the lowest points of the plurality of strip-shaped grooves are both parallel to the surface of the cathode metal layer facing the cathode metal portion.

[0010] Optionally, the area of ​​the bonding region between the cathode metal portion and the cathode metal layer is 1 cm². 2 Up to 25cm 2 .

[0011] Optionally, the distance between the surfaces of the cathode metal portion and the cathode metal layer on opposite sides is 0.2 mm to 1 mm.

[0012] Optionally, the integrated circuit heat dissipation packaging structure further includes: an electronic device disposed on a carrier plate, wherein the electronic device and the heat sink are respectively located on opposite sides of the carrier plate.

[0013] In some embodiments, an integrated circuit heat dissipation packaging method is also provided for preparing an integrated circuit heat dissipation packaging structure as described above. The packaging method includes: preparing a heat sink having a cathode metal portion; preparing a cathode metal layer on the surface of one side of a carrier board; and connecting the cathode metal portion and the cathode metal layer by an electroplating bonding process.

[0014] Optionally, in the electroplating bonding process, the electroplating bonding solution uses a copper methanesulfonate system or a copper sulfate system.

[0015] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the electroplating bonding solution includes: 200 g / L to 260 g / L of copper methanesulfonate, 60 g / L to 100 g / L of methanesulfonic acid, 30.9 mg / L to 61.7 mg / L of hydrochloric acid, 100 mg / L to 300 mg / L of wetting agent, 2 mg / L to 5 mg / L of accelerator, and 2 mg / L to 6 mg / L of leveling agent; or, the electroplating bonding solution includes: 200 g / L to 260 g / L of copper methanesulfonate, 60 g / L to 100 g / L of methanesulfonic acid, 49.4 mg / L to 98.9 mg / L of sodium chloride, 100 mg / L to 300 mg / L of wetting agent, 2 mg / L to 5 mg / L of accelerator, and 2 mg / L to 6 mg / L of leveling agent.

[0016] Optionally, when the electroplating bonding solution uses a copper sulfate system, the electroplating bonding solution includes: 120 g / L to 180 g / L copper sulfate, 50 g / L to 100 g / L sulfuric acid, 100 mg / L to 300 mg / L wetting agent, 5 mg / L to 10 mg / L accelerator and 2 mg / L to 6 mg / L leveling agent.

[0017] Optionally, the integrated circuit heat dissipation packaging structure includes an electronic device; before the step of connecting the cathode metal portion and the cathode metal layer through an electroplating bonding process, the packaging method further includes: connecting the electronic device to the side of the carrier plate away from the cathode metal layer; insulating and protecting the surfaces of the carrier plate and the electronic device, and exposing the cathode metal layer; or, after the step of connecting the cathode metal portion and the cathode metal layer through an electroplating bonding process, the packaging method further includes: connecting the electronic device to the side of the carrier plate away from the cathode metal layer.

[0018] Optionally, the electroplating bonding process is carried out in an electroplating tank equipped with a jetting device and / or an ultrasonic generator; the jetting device is directed toward the bonding area between the cathode metal part and the cathode metal layer, and the jetting flow rate is 0.6 L / min to 2 L / min; the ultrasonic generator is used to emit ultrasonic waves with a frequency of 50 kHz to 100 kHz.

[0019] Optionally, in the electroplating bonding process, the electroplating bonding temperature is 20°C to 30°C; the electroplating bonding current is a direct current or a pulsed current, with an average current density of 0.5ASD to 2ASD.

[0020] Optionally, before the step of connecting the cathode metal portion and the cathode metal layer through an electroplating bonding process, the packaging method further includes pre-treating the surfaces of the cathode metal portion and the cathode metal layer on opposite sides.

[0021] Optionally, the step of pretreating the surfaces of the cathode metal part and the cathode metal layer on opposite sides includes: sequentially performing pickling, micro-etching and activation on the surfaces of the cathode metal part and the cathode metal layer on opposite sides; or, sequentially performing chemical polishing, cleaning and activation on the surfaces of the cathode metal part and the cathode metal layer on opposite sides.

[0022] The integrated circuit heat dissipation packaging structure and method provided in this disclosure can achieve the following technical effects: The integrated circuit heat dissipation packaging structure provided in this disclosure includes a cathode metal layer disposed on one side of a carrier substrate, which serves as a cathode in the electroplating bonding process. A heat sink is disposed on one side of the carrier substrate, allowing it to be connected to the substrate to accelerate heat dissipation. The heat sink includes a cathode metal portion, which is disposed opposite to and spaced from the cathode metal layer, such that the surface of the cathode metal portion facing the cathode metal layer can serve as another cathode in the electroplating bonding process. An electroplating bonding layer is formed between the cathode metal portion and the cathode metal layer through an electroplating bonding process to connect the heat sink and the carrier substrate. In other words, two cathodes are connected through an electroplating bonding process to form an electroplating bonding layer, thereby connecting the heat sink and the carrier substrate. This improves the thermal conductivity at the connection between the heat sink and the carrier substrate and reduces the packaging thermal resistance. Furthermore, the electroplating bonding process can be fabricated at low temperatures (e.g., 20°C to 30°C), reducing the probability of internal defects at the connection site and eliminating the thermal interface between the cathode metal portion and the carrier substrate, thus reducing thermal stress and thermal resistance, and improving packaging reliability and heat dissipation efficiency.

[0023] The above general description and the description below are exemplary and illustrative only and are not intended to limit this application. Attached Figure Description

[0024] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein: Figure 1 This is a schematic diagram of the integrated circuit heat dissipation packaging structure provided in the embodiments of this disclosure; Figure 2 This is a schematic diagram of the structure of the cathode metal portion provided in an embodiment of this disclosure; Figure 3 yes Figure 2 The schematic diagram shown in the embodiment illustrates the arrangement relationship between the cathode metal portion and the cathode metal layer. Figure 4 This is a schematic diagram illustrating the fabrication principle of the integrated circuit heat dissipation packaging structure provided in this embodiment. Figure 5 This is a flowchart of an integrated circuit heat dissipation packaging method provided in one embodiment of the present disclosure; Figure 6 This is a flowchart of an integrated circuit heat dissipation packaging method provided in another embodiment of the present disclosure; Figure 7 This is a flowchart of an integrated circuit heat dissipation packaging method provided in yet another embodiment of this disclosure; Figure 8 This is a flowchart of an integrated circuit heat dissipation packaging method provided in yet another embodiment of this disclosure; Figure 9 This is a flowchart of an integrated circuit heat dissipation packaging method provided in yet another embodiment of this disclosure.

[0025] Figure label: 100: Integrated circuit heat dissipation package structure; 101: Carrier board; 102: Heat sink; 1021: Cathode metal part; 1022: Heat dissipation part; 1023: Strip-shaped protrusion; 1024: Strip-shaped groove; 103: Electroplated bonding layer; 104: Electronic device; 105: Cathode metal layer; 200: Electroplating bath; 201: Anode; 300: Jet nozzle; 400: Ultrasonic generator. Detailed Implementation

[0026] To provide a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and are not intended to limit the embodiments of this disclosure. In the following technical description, for ease of explanation, several details are used to provide a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be simplified in their depiction to simplify the drawings.

[0027] The terms "comprising" and "having," and any variations thereof, in the specification, claims, and accompanying drawings of this disclosure, are intended to cover non-exclusive inclusion.

[0028] In this disclosure, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for better description of the embodiments of this disclosure and their implementations, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to require them to be constructed and operated in a specific orientation. Furthermore, some of the aforementioned terms may be used to indicate other meanings besides orientation or positional relationship; for example, the term "upper" may in some cases indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in the embodiments of this disclosure according to the specific circumstances.

[0029] Furthermore, the terms "set up," "connect," and "fix" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0030] Unless otherwise stated, the term "multiple" means two or more.

[0031] In this embodiment of the disclosure, the character " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B means: A or B.

[0032] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.

[0033] It should be noted that, unless otherwise specified, the embodiments and features described in the present disclosure can be combined with each other.

[0034] Combination Figures 1 to 4 As shown, this disclosure provides an integrated circuit heat dissipation packaging structure 100. The integrated circuit heat dissipation packaging structure 100 includes a carrier substrate 101, a heat sink 102, and an electroplated bonding layer 103. A cathode metal layer 105 is disposed on one side of the carrier substrate 101. The heat sink 102 is disposed on one side of the carrier substrate 101. The heat sink 102 includes a cathode metal portion 1021. The cathode metal portion 1021 is disposed opposite to and spaced apart from the cathode metal layer 105. The electroplated bonding layer 103 is formed between the cathode metal portion 1021 and the cathode metal layer 105 through an electroplating bonding process to connect the heat sink 102 and the carrier substrate 101.

[0035] In this embodiment, a cathode metal layer 105 is provided on one side of the carrier plate 101 so that the cathode metal layer 105 serves as a cathode in the electroplating bonding process. The heat sink 102 includes a cathode metal portion 1021, which is disposed opposite to and spaced apart from the cathode metal layer 105, so that the surface of the cathode metal portion 1021 facing the cathode metal layer 105 can serve as another cathode in the electroplating bonding process.

[0036] In this embodiment, the electroplated bonding layer 103 is formed between the cathode metal portion 1021 and the cathode metal layer 105 through an electroplating bonding process to connect the heat sink 102 and the carrier plate 101. That is, the two cathodes are connected by an electroplating bonding process to form the electroplated bonding layer 103, which connects the heat sink 102 and the carrier plate 101, improving the thermal conductivity at the connection point and reducing the thermal resistance of the package. Furthermore, the electroplating bonding process can be performed at low temperatures (e.g., 20°C to 30°C), reducing the probability of internal defects at the connection point and eliminating the thermal interface between the cathode metal portion 1021 and the carrier plate 101, thereby reducing thermal stress and thermal resistance, and improving package reliability and heat dissipation efficiency.

[0037] In this embodiment, the cathode metal portion 1021 of the heat sink 102 is connected to the cathode metal layer 105 of the carrier plate 101 through an electroplated bonding layer 103, so that the electroplated bonding layer 103, the carrier plate 101 and the heat sink 102 form an integral structure, which is compact and has no internal thermal interface, thus reducing thermal resistance.

[0038] In this embodiment, the cathode metal portion 1021 of the heat sink 102 and the cathode metal layer 105 of the carrier 101 are connected by an electroplated bonding layer 103, thereby realizing the integration of a more efficient thermal management structure on the surface of the integrated circuit carrier 101 to form a widely applicable high heat dissipation integrated circuit heat dissipation packaging structure 100.

[0039] In this embodiment, the heat sink 102 is disposed on one side of the carrier plate 101, so that the heat sink 102 can be connected to the carrier plate 101 to accelerate heat dissipation and improve heat dissipation efficiency.

[0040] Optionally, combined Figure 1 As shown, the heat sink 102 also includes a heat dissipation section 1022. The heat dissipation section 1022 is disposed on the cathode metal section 1021. The heat dissipation section 1022 and the carrier plate 101 are respectively located on opposite sides of the cathode metal section 1021.

[0041] In this embodiment, the heat dissipation area is increased by the heat dissipation part 1022, thereby improving the heat dissipation efficiency.

[0042] In practical applications, the heat dissipation unit 1022 can be equipped with a fan or a water cooling system to increase the heat exchange efficiency of the heat dissipation unit 1022.

[0043] Optionally, the heat dissipation part 1022 may be made of materials including but not limited to copper, copper alloy, aluminum, aluminum alloy and stainless steel.

[0044] In this embodiment, the heat dissipation part 1022 is made of a material with high thermal conductivity to accelerate heat dissipation and improve heat dissipation efficiency.

[0045] Optionally, the heat dissipation section 1022 includes multiple heat dissipation fins. All the heat dissipation fins are disposed on the cathode metal section 1021.

[0046] In this embodiment, the heat dissipation fins are generally thin and long plate-like structures, which can form a large surface area and enhance natural convection heat transfer with the surrounding environment. Moreover, the heat dissipation fins can also save space and operate quietly while accelerating heat dissipation.

[0047] Optionally, multiple heat dissipation fins are arranged in parallel on the cathode metal part 1021 to improve heat exchange uniformity.

[0048] Optionally, the heat dissipation section 1022 includes multiple heat dissipation pillars. All of the multiple heat dissipation pillars are disposed on the cathode metal section 1021.

[0049] In this embodiment, multiple heat dissipation columns are used to increase the heat exchange area and improve the heat exchange efficiency.

[0050] Optionally, multiple heat dissipation columns are evenly distributed in the cathode metal portion 1021 to improve heat transfer uniformity.

[0051] Optionally, the carrier plate 101 may be made of one or more of resin, ceramic, glass and silicon.

[0052] Optionally, the electroplated bonding layer 103 is made of copper, copper alloy, or copper-based composite material to improve thermal conductivity and reduce thermal resistance.

[0053] Optionally, the cathode metal portion 1021 may be made of copper, gold, or silver to serve as the cathode for the electroplating bonding process.

[0054] Optionally, the cathode metal layer 105 may be made of copper, gold, or silver to serve as the cathode for the electroplating bonding process.

[0055] Optionally, the cathode metal portion 1021 and the cathode metal layer 105 may be made of the same or different materials.

[0056] For example, both the cathode metal portion 1021 and the cathode metal layer 105 are made of copper.

[0057] For example, the cathode metal portion 1021 is made of copper, and the cathode metal layer 105 is made of gold.

[0058] It is understood that the carrier board 101 in this embodiment may be an integrated circuit carrier board in related technologies.

[0059] Combination Figure 1 and Figure 4 As shown, in some embodiments, the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are both planar and parallel.

[0060] In this embodiment, the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are both planar. That is, when the cathode metal portion 1021 and the cathode metal layer 105 are positioned opposite each other and spaced apart, the surface of the cathode metal portion 1021 facing the cathode metal layer 105 is planar, and the surface of the cathode metal layer 105 facing the cathode metal portion 1021 is planar. The surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are parallel; that is, the surface of the cathode metal portion 1021 facing the cathode metal layer 105 is parallel to the surface of the cathode metal layer 105 facing the cathode metal portion 1021.

[0061] In this embodiment, since the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are both planar and parallel, the flow field and electric field during the electroplating bonding process are more regular and easier to control by adjusting bonding process parameters (such as electroplating bonding current or electroplating bonding solution composition) to improve bonding quality.

[0062] Combination Figure 2 and Figure 3 As shown, in some embodiments, the surface of the cathode metal portion 1021 facing the cathode metal layer 105 includes a plurality of strip-shaped protrusions 1023 and a plurality of strip-shaped grooves 1024 arranged side by side. The strip-shaped protrusions 1023 and strip-shaped grooves 1024 are arranged alternately and connected. The plane formed by the highest points of the plurality of strip-shaped protrusions 1023 (e.g., Figure 3 The plane formed by the dashed line P1 and the lowest point of multiple strip grooves 1024 (as shown in the image) Figure 3 The dashed line P2 in the figure is parallel to the surface of the cathode metal layer 105 facing the cathode metal part 1021.

[0063] In this embodiment, the surface of the cathode metal portion 1021 facing the cathode metal layer 105 includes a plurality of strip-shaped protrusions 1023 and a plurality of strip-shaped grooves 1024 arranged side by side. The strip-shaped protrusions 1023 and strip-shaped grooves 1024 are alternately arranged and connected, forming a periodically changing surface structure on the surface of the cathode metal portion 1021. The plane formed by the highest points of the plurality of strip-shaped protrusions 1023 is parallel to the surface of the cathode metal layer 105 facing the cathode metal portion 1021. Similarly, the plane formed by the lowest points of the plurality of strip-shaped grooves 1024 is parallel to the surface of the cathode metal layer 105 facing the cathode metal portion 1021. This makes the flow field and electric field during the electroplating bonding process more regular and easier to control by adjusting bonding process parameters (e.g., electroplating bonding current or electroplating bonding solution), thereby improving the bonding quality.

[0064] Optionally, adjacent strip protrusions 1023 and strip grooves 1024, and strip grooves 1024 and strip protrusions 1023 are smoothly connected to improve the uniformity of the surface of the cathode metal portion 1021.

[0065] Optionally, combined Figure 2 As shown, when the cathode metal portion 1021 has a cuboid structure, the strip-shaped protrusion 1023 and the strip-shaped groove 1024 are perpendicular to the long side of the cathode metal portion 1021. The strip-shaped protrusion 1023 and the strip-shaped groove 1024 are parallel to the short side of the cathode metal portion 1021, and the lengths of the strip-shaped protrusion 1023 and the strip-shaped groove 1024 are equal to the lengths of the short side of the cathode metal portion 1021.

[0066] In some embodiments, the area of ​​the bonding region between the cathode metal portion 1021 and the cathode metal layer 105 is 1 cm². 2 Up to 25cm 2 .

[0067] In this embodiment, the area of ​​the bonding region between the cathode metal portion 1021 and the cathode metal layer 105 is 1 cm². 2 Up to 25cm 2 This enables surface-to-surface bonding connections with large bonding areas, achieving high-quality connections between the heat sink 102 and the carrier plate 101 while expanding the applicability of the electroplating bonding process.

[0068] Combination Figure 4 As shown, in some embodiments, the spacing between the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides (e.g.) Figure 4 a) in the figure is 0.2 mm to 1 mm.

[0069] In this embodiment, the distance between the opposing surfaces of the cathode metal portion 1021 and the cathode metal layer 105 is 0.2 mm to 1 mm to achieve a spaced arrangement between the cathode metal portion 1021 and the cathode metal layer 105. By maintaining a distance and placing them parallel during the electroplating bonding process, a large-area surface-to-surface bonding connection is achieved, improving the quality of the connection between the cathode metal portion 1021 and the cathode metal layer 105.

[0070] Combination Figure 1 and Figure 4 As shown, in some embodiments, the integrated circuit heat dissipation package structure 100 further includes an electronic device 104. The electronic device 104 is disposed on the carrier plate 101, and the electronic device 104 and the heat sink 102 are respectively located on opposite sides of the carrier plate 101.

[0071] In this embodiment, the electronic device 104 and the heat sink 102 are located on opposite sides of the carrier plate 101, so that the heat sink 102 can dissipate heat from the electronic device 104 on the surface of the carrier plate 101, thereby improving the heat dissipation effect.

[0072] Optionally, a metal wiring layer is provided on the surface of the carrier plate 101 away from the cathode metal layer 105. That is, the metal wiring layer and the cathode metal layer 105 are respectively provided on opposite sides of the carrier plate 101. The metal wiring layer is used to connect with the electronic device 104 to realize the transmission of power and signals.

[0073] Optionally, the electronic device 104 is a chip or electronic component.

[0074] In related technologies, electroplating bonding processes are generally used for point bonding and line bonding. While surface-to-surface bonding is also used inside chips, the bonding area is usually smaller than or equal to the chip size. Therefore, the number of ions required for bonding is limited, ion mass transfer resistance is low, and it is easy to maintain a stable ion concentration during bonding. However, surface-to-surface bonding with a large bonding area is difficult to achieve. In surface-to-surface bonding with a large bonding area, ions within the bonding region are replenished by mass transfer from the bulk solution to the interior, and the ion mass transfer resistance increases significantly with increasing bonding area. The ion mass transfer resistance gradually increases from the edge to the center of the bonding region, causing the bonding environment to gradually deteriorate during the bonding process. At the center of the bonding region, the consumed solution ions cannot be replenished in time, making it difficult to maintain a constant ion concentration within the bonding region. Under the same bonding process parameters, bonding regions with lower ion concentrations have weaker polarization due to ion reduction, which makes the electroplated bonding layer prone to problems such as porosity and severe stress, and easily forms bonding defects such as voids and slits, or even fails to bond (no bonding layer).

[0075] Combination Figure 5 As shown in the embodiments of this disclosure, an integrated circuit heat dissipation packaging method is also provided for fabricating the integrated circuit heat dissipation packaging structure 100 as described above. The packaging method includes: S501. Prepare a heat sink with a cathode metal part.

[0076] In this embodiment, the heat sink 102 has a cathode metal portion 1021, and the surface of the cathode metal portion 1021 provides a cathode for the electroplating bonding process.

[0077] S502. Prepare a cathode metal layer on one side of the carrier plate.

[0078] In this embodiment, a cathode metal layer 105 is prepared on one side of the surface of the carrier plate 101, and the cathode metal layer 105 provides a cathode for the electroplating bonding process.

[0079] Optionally, the cathode metal layer 105 is prepared on one side of the carrier plate 101 by magnetron sputtering.

[0080] Optionally, the cathode metal layer 105 is prepared on one side of the carrier plate 101 by chemical plating.

[0081] S503. The cathode metal part and the cathode metal layer are connected by an electroplating bonding process.

[0082] In this embodiment, the cathode metal portion 1021 and the cathode metal layer 105 are connected by an electroplating bonding process, achieving a large-area surface-to-surface bonding connection and connecting the heat sink 102 and the carrier plate 101 to complete the fabrication of the integrated circuit heat dissipation packaging structure 100. Specifically, the carrier plate 101, the electroplated bonding layer 103, and the heat sink 102 form an integrated structure, realizing the fabrication of an integrated integrated circuit heat dissipation packaging structure 100.

[0083] In this embodiment, the integrated circuit heat dissipation packaging structure 100 is fabricated using an integrated circuit heat dissipation packaging method. This method is simple, reliable, and can be fabricated at low temperatures, eliminating the thermal interface and reducing the probability of internal defects at the connection points. This achieves a highly reliable and thermally conductive connection between the cathode metal portion 1021 of the heat sink 102 and the cathode metal layer 105 of the carrier plate 101. This further reduces thermal stress and thermal resistance, improving packaging reliability and heat dissipation efficiency.

[0084] In some embodiments, the electroplating bonding solution in the electroplating bonding process is a copper methanesulfonate system or a copper sulfate system.

[0085] In this embodiment, the copper methanesulfonate system or copper sulfate system is used as the electroplating bonding solution to provide a copper source for the electroplating bonding process, so as to ensure the smooth progress of the electroplating bonding process.

[0086] In some embodiments, when the electroplating bonding solution uses a copper methanesulfonate system, the electroplating bonding solution comprises: 200 g / L to 260 g / L of copper methanesulfonate, 60 g / L to 100 g / L of methanesulfonic acid, 30.9 mg / L to 61.7 mg / L of hydrochloric acid, 100 mg / L to 300 mg / L of wetting agent, 2 mg / L to 5 mg / L of accelerator, and 2 mg / L to 6 mg / L of leveling agent.

[0087] In this embodiment, chloride ions are provided to the electroplating bonding solution using hydrochloric acid at concentrations ranging from 30.9 mg / L to 61.7 mg / L to increase the electroplating rate and improve the quality of the electroplated bonding layer 103.

[0088] In this embodiment, for the copper methanesulfonate system, a stable copper source is provided by using 200 g / L to 260 g / L of copper methanesulfonate, 60 g / L to 100 g / L of methanesulfonic acid, and 30.9 mg / L to 61.7 mg / L of hydrochloric acid. Specific adsorption is achieved within the bonding region using 100 mg / L to 300 mg / L of wetting agent, 2 mg / L to 6 mg / L of leveling agent, and 2 mg / L to 5 mg / L of accelerator. Specifically, the wetting agent improves the wetting effect of the electroplating bonding solution within the micro-bonding region, promoting mass transfer of the accelerator and leveling agent into the interior of the bonding region. The leveling agent strongly adsorbs onto the cathode surface at the edge of the bonding region (high charge density, strong solution convection), forming a coating that inhibits the contact and charge transfer between copper ions and the cathode surface, thus significantly suppressing copper reduction. There is competitive adsorption between accelerators and leveling agents. Accelerators are mainly adsorbed at the center of the bonding region (low charge density, weak solution convection), while copper ions (such as...) are adsorbed... Figure 4 In the diagram, the arrows with a "+" sign indicate the movement of copper ions. With the assistance of an accelerator, the rate at which copper ions gain electrons increases, promoting the reduction process and improving the quality of the electroplated bonding layer 103.

[0089] In this embodiment, the synergistic effect of wetting agents, accelerators, and leveling agents increases the wettability of the bonding solution on the bonding region, reducing the resistance to mass transfer from the solution to the center of the bonding region. This increases the solution's sensitivity to changes in convection intensity within the bonding region, promoting copper deposition in the center of the bonding region (where convection intensity is low) and inhibiting copper deposition in the edges (where convection intensity is high). This effectively avoids the problem of edge-priority bonding in related technologies, where internal bonding is impossible, reducing or even eliminating bonding defects. Furthermore, it improves the copper layer crystallization process, avoiding the porosity problem of the electroplated bonding layer 103 caused by low polarization intensity in related technologies, thus improving the quality of the electroplated bonding layer 103.

[0090] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of copper methanesulfonate in the electroplating bonding solution is 200 g / L, 210 g / L, 220 g / L, 230 g / L, 240 g / L, 250 g / L, or 260 g / L.

[0091] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of methanesulfonic acid in the electroplating bonding solution is 60 g / L, 70 g / L, 80 g / L, 90 g / L, or 100 g / L.

[0092] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of hydrochloric acid in the electroplating bonding solution is 30.9 mg / L, 45 mg / L, 50 mg / L, 55 mg / L or 61.7 mg / L.

[0093] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of the wetting agent in the electroplating bonding solution is 100 mg / L, 150 mg / L, 200 mg / L, 250 mg / L, or 300 mg / L.

[0094] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of the accelerator in the electroplating bonding solution is 2 mg / L, 3 mg / L, 4 mg / L, or 5 mg / L.

[0095] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of the leveling agent in the electroplating bonding solution is 2 mg / L, 3 mg / L, 4 mg / L, 5 mg / L, or 6 mg / L.

[0096] In some embodiments, when the electroplating bonding solution uses a copper methanesulfonate system, the electroplating bonding solution comprises: 200 g / L to 260 g / L of copper methanesulfonate, 60 g / L to 100 g / L of methanesulfonic acid, 49.4 mg / L to 98.9 mg / L of sodium chloride, 100 mg / L to 300 mg / L of wetting agent, 2 mg / L to 5 mg / L of accelerator, and 2 mg / L to 6 mg / L of leveling agent.

[0097] In this embodiment, sodium chloride at concentrations ranging from 49.4 mg / L to 98.9 mg / L is used to provide chloride ions to the electroplating bonding solution, thereby increasing the electroplating rate and improving the quality of the electroplated bonding layer 103.

[0098] In this embodiment, a stable copper source is provided by using 200 g / L to 260 g / L of copper methanesulfonate, 60 g / L to 100 g / L of methanesulfonic acid, and 49.4 mg / L to 98.9 mg / L of sodium chloride. Through the synergistic effect of wetting agents, accelerators, and leveling agents, the wettability of the bonding solution on the bonding region is increased, reducing the resistance to mass transfer from the solution to the center of the bonding region. The sensitivity of the solution to changes in convection intensity within the bonding region is increased, promoting copper deposition in the low-convection region at the center of the bonding region and inhibiting copper deposition in the high-convection region at the edges of the bonding region. This effectively avoids the problem of edge-prioritized bonding in related technologies, where further bonding is impossible in the interior, reducing or even eliminating bonding defects. The crystallization process of the copper layer is improved, avoiding the problem of loose electroplated bonding layer 103 caused by low polarization intensity in related technologies, thus improving the quality of the electroplated bonding layer 103.

[0099] Optionally, when the electroplating bonding solution uses a copper methanesulfonate system, the mass concentration of sodium chloride in the electroplating bonding solution is 49.4 mg / L, 60 mg / L, 75 mg / L, 90 mg / L, or 98.9 mg / L.

[0100] In some embodiments, when the electroplating bonding solution uses a copper sulfate system, the electroplating bonding solution includes: 120 g / L to 180 g / L copper sulfate, 50 g / L to 100 g / L sulfuric acid, 100 mg / L to 300 mg / L wetting agent, 5 mg / L to 10 mg / L accelerator, and 2 mg / L to 6 mg / L leveling agent.

[0101] In this embodiment, a stable copper source is provided in the copper sulfate system using 120 g / L to 180 g / L copper sulfate and 50 g / L to 100 g / L sulfuric acid. Specific adsorption is achieved within the bonding region using 100 mg / L to 300 mg / L wetting agent, 5 mg / L to 10 mg / L accelerator, and 2 mg / L to 6 mg / L leveling agent. Specifically, the wetting agent improves the wetting effect of the bonding solution within the small bonding region, promoting mass transfer of the accelerator and leveling agent into the bonding region. The leveling agent strongly adsorbs on the cathode surface at the edge of the bonding region (high charge density, strong solution convection), forming a cover and inhibiting the contact and charge transfer between copper ions and the cathode surface, thus significantly suppressing copper reduction. There is competitive adsorption between the accelerator and leveling agent; the accelerator mainly adsorbs in the center of the bonding region (low charge density, weak solution convection), while copper ions (such as...) adsorb in the center of the bonding region. Figure 4 In the diagram, the arrows with "+" signs indicate the movement of copper ions. With the assistance of the accelerator, the rate at which copper ions gain electrons increases, promoting the reduction process and improving the quality of the electroplated bonding layer 103.

[0102] Optionally, when the electroplating bonding solution uses a copper sulfate system, the mass concentration of copper sulfate in the electroplating bonding solution is 120 g / L, 130 g / L, 140 g / L, 150 g / L, 160 g / L, 170 g / L, or 180 g / L.

[0103] Optionally, when the electroplating bonding solution uses a copper sulfate system, the mass concentration of sulfuric acid in the electroplating bonding solution is 50 g / L, 60 g / L, 70 g / L, 80 g / L, 90 g / L, or 100 g / L.

[0104] Optionally, when the electroplating bonding solution uses a copper sulfate system, the mass concentration of the wetting agent in the electroplating bonding solution is 100 mg / L, 150 mg / L, 200 mg / L, 250 mg / L, or 300 mg / L.

[0105] Optionally, when the electroplating bonding solution uses a copper sulfate system, the mass concentration of the accelerator in the electroplating bonding solution is 5 mg / L, 6 mg / L, 7 mg / L, 8 mg / L, 9 mg / L, or 10 mg / L.

[0106] Optionally, when the electroplating bonding solution uses a copper sulfate system, the mass concentration of the leveling agent in the electroplating bonding solution is 2 mg / L, 3 mg / L, 4 mg / L, 5 mg / L, or 6 mg / L.

[0107] Optionally, the wetting agent is polyethylene glycol (HO(CH2CH2O)). n H, molecular weight 2000-12000).

[0108] Optionally, the wetting agent is polypropylene glycol (H(C3H6O)). n OH, molecular weight 200-2000).

[0109] Optionally, the wetting agent is a block polyether (EO-PO, EO-PO-EO) composed of ethylene oxide and propylene oxide.

[0110] Optionally, the wetting agent is a mixture of polyethylene glycol (molecular weight 2000-12000) and polypropylene glycol (molecular weight 200-2000).

[0111] Alternatively, the accelerator may be a sodium salt containing a sulfonic acid group.

[0112] Optionally, the accelerator is sodium 2,3-dimercaptopropanesulfonate (C3H7NaO3S3).

[0113] Optionally, the accelerator may be sodium 3-mercapto-1-propanesulfonate (C3H7NaO3S2).

[0114] Optionally, the leveling agent may be a quaternary ammonium salt leveling agent.

[0115] Optionally, the leveling agent is dodecyltrimethylammonium chloride (C 15 H 34 ClN).

[0116] Optionally, the leveling agent is hexadecyltrimethylammonium chloride (C... 19 H 42 ClN).

[0117] For example, when the electroplating bonding solution uses a copper methanesulfonate system, the accelerator is 4 mg / L sodium 3-mercapto-1-propanesulfonate, the wetting agent is 100 mg / L polyethylene glycol 6000, and the leveling agent is 5 mg / L hexadecyltrimethylammonium chloride. In this example, the other components and amounts in the electroplating bonding solution can be set as needed.

[0118] In this example, the concentration of copper ions is relatively high in the copper methanesulfonate system. This results in a stronger edge effect under the same electroplating bonding current. Therefore, by using 4 mg / L sodium 3-mercapto-1-propanesulfonate, 100 mg / L polyethylene glycol 6000, and 5 mg / L hexadecyltrimethylammonium chloride, the electroplating bonding solution exhibits a stronger inhibitory effect on the copper layer bonding process at the edges of the bonding region.

[0119] Specifically, the wetting agent polyethylene glycol 6000 promotes mass transfer of the accelerator and leveling agent into the bonding region. The leveling agent, hexadecyltrimethylammonium chloride, has a large molecular weight and strongly adsorbs onto the cathode surface at the edge of the bonding region, forming a coating that inhibits the contact and charge transfer process between copper ions and the cathode surface, thus significantly suppressing copper reduction. There is competitive adsorption between the accelerator sodium 3-mercapto-1-propanesulfonate and the leveling agent hexadecyltrimethylammonium chloride. The accelerator sodium 3-mercapto-1-propanesulfonate mainly adsorbs in the center of the bonding region. With the assistance of the accelerator sodium 3-mercapto-1-propanesulfonate, the rate at which copper ions gain electrons is accelerated, promoting the reduction process.

[0120] For example, when the electroplating bonding solution uses a copper sulfate system, the accelerator is 5 mg / L sodium 2,3-dimercaptopropanesulfonate, and the wetting agent is a mixture of 100 mg / L polyethylene glycol 8000 and 100 mg / L polypropylene glycol 200. The leveling agent is 5 mg / L dodecyltrimethylammonium chloride. In this example, the other components and amounts in the electroplating bonding solution can be set as needed.

[0121] In this example, the copper ion concentration was low in the copper sulfate system. The concentration and molecular weight of the wetting agent were increased by using a mixture of 100 mg / L polyethylene glycol 8000 and 100 mg / L polypropylene glycol 200 to improve the wetting effect of the solution on the bonded regions. The copper ion reduction process was accelerated by using a slightly smaller molecular weight leveling agent, dodecyltrimethylammonium chloride, and a more stable accelerator, sodium 2,3-dimercaptopropanesulfonate.

[0122] Combination Figure 1 and Figure 4 As shown, in some embodiments, the integrated circuit thermal packaging structure 100 includes an electronic device 104. Prior to the step of bonding the cathode metal portion 1021 to the cathode metal layer 105 via an electroplating bonding process, the packaging method further includes: attaching the electronic device 104 to the side of the carrier plate 101 away from the cathode metal layer 105. The surfaces of the carrier plate 101 and the electronic device 104 are insulated and protected, exposing the cathode metal layer 105.

[0123] In this embodiment, before bonding the cathode metal portion 1021 to the cathode metal layer 105 via electroplating bonding, the electronic device 104 is connected to the side of the carrier plate 101 away from the cathode metal layer 105. This allows the electronic device 104 to be mounted on the carrier plate 101, with the electronic device 104 and the cathode metal layer 105 located on opposite sides of the carrier plate 101. The surfaces of the carrier plate 101 and the electronic device 104 are insulated to protect both, ensuring good electrical performance of the electronic device 104. The cathode metal layer 105 is exposed; that is, while insulating the surfaces of the carrier plate 101 and the electronic device 104, the cathode metal layer 105 is retained to facilitate a smooth connection between the cathode metal portion 1021 and the cathode metal layer 105.

[0124] Alternatively, the electronic device 104 can be mounted on the carrier plate 101 by soldering.

[0125] Optionally, the surfaces of the carrier 101 and the electronic device 104 can be insulated and protected using either physical or chemical methods. The physical method involves coating the surfaces of the carrier 101 and the electronic device 104 with an acid-resistant photoresist, which can be completely removed after the electroplating bonding process. The chemical method involves coating the surfaces of the carrier 101 and the electronic device 104 with an insulating varnish, which is generally retained after the electroplating bonding process.

[0126] Combination Figure 6 As shown in the embodiments of this disclosure, an integrated circuit heat dissipation packaging method is also provided for fabricating the integrated circuit heat dissipation packaging structure 100 as described above. The packaging method includes: S601. Prepare a heat sink with a cathode metal part.

[0127] S602. Prepare a cathode metal layer on one side of the carrier plate.

[0128] S603. Connect the electronic device to the side of the carrier plate away from the cathode metal layer.

[0129] In this embodiment, the electronic device 104 is connected to the side of the carrier plate 101 away from the cathode metal layer 105 to realize the installation of the electronic device 104, so as to realize the heat dissipation of the electronic device 104 through the carrier plate 101 and the heat sink 102.

[0130] S604. Insulate and protect the surface of the carrier board and electronic device, and expose the cathode metal layer.

[0131] In this embodiment, the carrier plate 101 and the electronic device 104 are protected by insulating the surfaces of the carrier plate 101 and the electronic device 104. The exposed cathode metal layer 105 facilitates the connection between the cathode metal portion 1021 and the cathode metal layer 105.

[0132] S605. The cathode metal part and the cathode metal layer are connected by an electroplating bonding process.

[0133] This embodiment is applicable to situations where electronic devices 104 (chips or electronic components) have been soldered onto the integrated circuit substrate 101, and is used to protect the soldered electronic devices 104 during the electroplating bonding process.

[0134] Specifically, the cathode metal layer 105 is first fabricated on the carrier plate 101, and then the electronic device 104 is disposed on the carrier plate 101. Next, the surfaces of the carrier plate 101 and the electronic device 104 are insulated and protected, while retaining the cathode metal layer 105. Finally, the cathode metal portion 1021 and the cathode metal layer 105 are connected by an electroplating bonding process to realize the fabrication of the integrated circuit heat dissipation package structure 100. There is no thermal interface between the heat sink 102 and the carrier plate 101, and no additional thermal stress is introduced, which can minimize the thermal resistance of the electronic device 104 and improve heat dissipation capacity.

[0135] In some embodiments, the integrated circuit heat dissipation package structure 100 includes an electronic device 104. After the step of bonding the cathode metal portion 1021 to the cathode metal layer 105 by electroplating bonding process, the packaging method further includes: connecting the electronic device 104 to the side of the carrier plate 101 away from the cathode metal layer 105.

[0136] In this embodiment, after bonding the cathode metal portion 1021 and the cathode metal layer 105 through an electroplating bonding process, the electronic device 104 is connected to the side of the carrier plate 101 away from the cathode metal layer 105 to realize the installation of the electronic device 104 and complete the fabrication of the integrated circuit heat dissipation packaging structure 100.

[0137] Combination Figure 7 As shown in the embodiments of this disclosure, an integrated circuit heat dissipation packaging method is also provided for fabricating the integrated circuit heat dissipation packaging structure 100 as described above. The packaging method includes: S701. Prepare a heat sink with a cathode metal part.

[0138] S702. Prepare a cathode metal layer on one side of the carrier plate.

[0139] S703. The cathode metal part and the cathode metal layer are connected by an electroplating bonding process.

[0140] S704. Connect the electronic device to the side of the carrier plate away from the cathode metal layer.

[0141] This embodiment applies to the case where the heat sink 102 is connected to the carrier board 101 before the electronic device 104 is mounted on the carrier board 101. Specifically, the heat sink 102 is connected to the carrier board 101 first. Then, the electronic device 104 is mounted on the carrier board 101, thereby realizing the fabrication of the integrated circuit heat dissipation package structure 100.

[0142] In this embodiment, there is no thermal interface between the heat sink 102 and the carrier plate 101, and no additional thermal stress is introduced, which can minimize the thermal resistance of the electronic device 104 and improve the heat dissipation capacity.

[0143] In some embodiments, before the step of bonding the cathode metal portion 1021 and the cathode metal layer 105 by electroplating bonding process, the packaging method further includes: pre-treating the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides.

[0144] In this embodiment, the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are pretreated to remove surface impurities and oxide layers, thereby improving the surface activity of the cathode metal portion 1021 and the cathode metal layer 105.

[0145] When insulating the surfaces of the carrier 101 and the electronic device 104, insulating protective material (photoresist or insulating varnish) remains on the surface of the cathode metal layer 105 after the insulating protective material is applied. By pre-treating the surface of the cathode metal layer 105, the residual insulating protective material can be removed, thereby improving surface activity.

[0146] Combination Figure 8 As shown in the embodiments of this disclosure, an integrated circuit heat dissipation packaging method is also provided for fabricating the integrated circuit heat dissipation packaging structure 100 as described above. The packaging method includes: S801. Prepare a heat sink with a cathode metal part.

[0147] S802. Prepare a cathode metal layer on one side of the carrier plate.

[0148] S803. Connect the electronic device to the side of the carrier plate away from the cathode metal layer.

[0149] S804. Insulate and protect the surface of the carrier board and electronic device, and expose the cathode metal layer.

[0150] S805. Pretreatment is performed on the surfaces of the cathode metal part and the opposite side of the cathode metal layer.

[0151] In this embodiment, impurities and oxide layers on the opposite surfaces of the cathode metal portion 1021 and the cathode metal layer 105 are removed, and the insulating protective material remaining on the surface of the cathode metal layer 105 is removed, thereby improving the surface activity of the cathode metal portion 1021 and the cathode metal layer 105.

[0152] S806. The cathode metal part and the cathode metal layer are connected by an electroplating bonding process.

[0153] Combination Figure 9 As shown in the embodiments of this disclosure, an integrated circuit heat dissipation packaging method is also provided for fabricating the integrated circuit heat dissipation packaging structure 100 as described above. The packaging method includes: S901. Prepare a heat sink with a cathode metal part.

[0154] S902. Prepare a cathode metal layer on one side of the carrier plate.

[0155] S903. The surfaces of the cathode metal part and the opposite side of the cathode metal layer are pretreated.

[0156] In this embodiment, impurities and oxide layers on the opposite surfaces of the cathode metal portion 1021 and the cathode metal layer 105 are removed to improve the surface activity of the cathode metal portion 1021 and the cathode metal layer 105.

[0157] S904. The cathode metal part and the cathode metal layer are connected by an electroplating bonding process.

[0158] S905. Connect the electronic device to the side of the carrier plate away from the cathode metal layer.

[0159] In some embodiments, the step of pretreating the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides includes: sequentially performing pickling, micro-etching and activation on the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides.

[0160] In this embodiment, the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are sequentially acid-washed, micro-etched, and activated. Specifically, the surface of the cathode metal portion 1021 facing the cathode metal layer 105 is sequentially acid-washed, micro-etched, and activated, and the surface of the cathode metal layer 105 facing the cathode metal portion 1021 is also sequentially acid-washed, micro-etched, and activated. This removes surface impurities and oxide layers, improving the surface activity of the cathode metal portion 1021 and the cathode metal layer 105.

[0161] Optionally, pickling is performed using an H2SO4 solution with a mass fraction of 1% to 5%. The weak acid removes the oxide layer and impurities from the surfaces of the cathode metal portion 1021 and the cathode metal layer 105, providing a clean surface for subsequent processing.

[0162] Optionally, the micro-etching uses a mixed solution of 5% to 10% H2SO4 and 40 g / L to 60 g / L Na2S2O8. The acidic solution with a certain oxidizing property enhances the activity and adhesion of the cathode metal portion 1021 and the cathode metal layer 105.

[0163] Optionally, activation is performed using an H2SO4 solution with a mass fraction of 10% to 12%. Improving the wettability of the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 through a weak acid helps to enhance the effectiveness of the electroplating bonding process.

[0164] In some embodiments, the step of pre-treating the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides includes: sequentially performing chemical polishing, cleaning, and activation on the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides.

[0165] In this embodiment, the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides are sequentially chemically polished, cleaned, and activated. Specifically, the surface of the cathode metal portion 1021 facing the cathode metal layer 105 is sequentially chemically polished, cleaned, and activated, and the surface of the cathode metal layer 105 facing the cathode metal portion 1021 is also sequentially chemically polished, cleaned, and activated. This removes surface impurities and oxide layers, improving the surface activity of the cathode metal portion 1021 and the cathode metal layer 105.

[0166] Optionally, chemical polishing uses 20% to 30% nitric acid, 50% sulfuric acid, 0.2% to 0.5% hydrochloric acid, and 1% to 3% brightener by mass fraction. This improves the surface finish of the cathode metal portion 1021 and the cathode metal layer 105 on opposite sides, removes surface impurities, oxide layers, and other defects, and provides a higher quality substrate for subsequent processes.

[0167] It's understandable that the specific type of brightener is not limited; it can be selected according to need. For example, sodium citrate (C6H5Na3O7) or saccharin (C7H5NO3S).

[0168] Optionally, the cleaning process involves ultrasonic cleaning with deionized water 3 to 5 times to improve the cleanliness of the surfaces on opposite sides of the cathode metal part 1021 and the cathode metal layer 105, thereby improving adhesion.

[0169] Optionally, activation is performed using an H2SO4 solution with a mass fraction of 10% to 12%. Improving the wettability of the surfaces of the cathode metal portion 1021 and the cathode metal layer 105 through a weak acid helps to enhance the effectiveness of the electroplating bonding process.

[0170] Combination Figure 4As shown, in some embodiments, the electroplating bonding process is performed within an electroplating tank 200. The electroplating tank 200 is equipped with a jetting device. The jetting direction of the jetting device is directed towards the bonding region between the cathode metal portion 1021 and the cathode metal layer 105. The jetting flow rate is 0.6 L / min to 2 L / min.

[0171] In this embodiment, the electroplating tank 200 contains an electroplating bonding solution to ensure the smooth progress of the electroplating bonding process.

[0172] In this embodiment, the jet direction of the jet device (e.g.) Figure 4 The jet direction is directed toward the bonding region between the cathode metal part 1021 and the cathode metal layer 105, which strengthens the convection intensity of the solution at the center of the bonding region and creates a difference in convection intensity between the edge of the bonding region and the center of the bonding region, thereby enhancing the effects of the wetting agent, accelerator and leveling agent.

[0173] In this embodiment, the jet flow rate is 0.6 L / min to 2 L / min, which can promote the mass transfer of copper ions and improve the adsorption stability of wetting agents, accelerators and leveling agents.

[0174] Optionally, the jetting direction of the jetting device is parallel to the surfaces on the opposite sides of the cathode metal portion 1021 and the cathode metal layer 105, so as to increase the convection intensity of the solution at the center of the enhanced bonding region and create a difference in convection intensity between the edge of the bonding region and the center of the bonding region.

[0175] In practical applications, the jet nozzle 300 of the jet device can be inserted into the electroplating tank 200 to achieve jetting.

[0176] Combination Figure 4 As shown, in some embodiments, the electroplating bonding process is performed within an electroplating tank 200. An ultrasonic generator 400 is installed within the electroplating tank 200. The ultrasonic generator 400 is used to emit ultrasonic waves with a frequency of 50 kHz to 100 kHz.

[0177] In this embodiment, the ultrasonic generator 400 is placed in the electroplating bonding solution to generate ultrasonic effects on the solution. Figure 4 In the diagram, the dashed arrows around the ultrasonic generator 400 indicate the direction of the ultrasonic action. By propagating ultrasonic waves in the electroplating bonding solution, mass transfer from the solution to the center of the bonding region can be improved. The ultrasonic frequency is between 50 kHz and 100 kHz, which can promote copper ion mass transfer and also improve the adsorption stability of wetting agents, accelerators, and leveling agents.

[0178] Optionally, the distance between the ultrasonic generator 400 and the cathode metal part 1021 and the cathode metal layer 105 is greater than or equal to 1 cm to improve the ultrasonic effect.

[0179] Combination Figure 4 As shown, in some embodiments, the electroplating bonding process is performed within an electroplating tank 200. The electroplating tank 200 is equipped with a jetting device and an ultrasonic generator 400. The jetting device directs the jet towards the bonding region between the cathode metal portion 1021 and the cathode metal layer 105, and the jet flow rate is 0.6 L / min to 2 L / min. The ultrasonic generator 400 emits ultrasonic waves at a frequency of 50 kHz to 100 kHz.

[0180] In this embodiment, a combination of jet processing and ultrasound is used for assisted processing to further enhance the convection intensity of the solution at the center of the bonding region. This promotes the mass transfer of copper ions into the bonding region and the adsorption of wetting agents, accelerators, and leveling agents, reducing electroplating bonding defects. Furthermore, it creates a difference in convection intensity between the edge and center of the bonding region, enhancing the synergistic effect of wetting agents, accelerators, and leveling agents, and improving their adsorption stability.

[0181] Combination Figure 4 As shown, optionally, the electroplating tank 200 includes a cathode clamp and an anode 201. The cathode clamp is used to fix the carrier plate 101 and the heat sink 102 so that the cathode metal portion 1021 is parallel to and spaced apart from the cathode metal layer 105.

[0182] In this embodiment, the cathode fixture and the anode 201 are connected to the negative and positive terminals of the electroplating power supply, respectively, to ensure the smooth progress of the electroplating bonding process.

[0183] Alternatively, the anode 201 may be made of phosphor bronze.

[0184] In this embodiment, phosphor bronze is soluble and can maintain a stable copper ion concentration in the solution. Maintaining a consistent solution environment over a longer process time helps form a uniform electroplated bonding layer 103, improving bonding quality. Phosphor bronze promotes the replenishment of copper ions within the bonding region, effectively preventing void defects and avoiding a decrease in copper ion concentration in the bonding region, thereby improving the quality of the electroplated bonding layer 103.

[0185] Optionally, the anode 201 may be made of platinum. Platinum is insoluble.

[0186] In some embodiments, the electroplating bonding process is carried out at a temperature of 20°C to 30°C. The electroplating bonding current is a direct current or a pulsed current, with an average current density of 0.5 ASD to 2 ASD.

[0187] In this embodiment, the cathode metal layer 105 and the cathode metal portion 1021 constitute a dual cathode. The dual cathodes are connected using an electroplating bonding process at a temperature of 20°C to 30°C, without introducing additional thermal stress. This minimizes the thermal resistance of the electronic device 104, improves heat dissipation capacity, and enhances packaging reliability and heat dissipation efficiency.

[0188] In this embodiment, the electroplating bonding temperature is 20°C to 30°C. That is, the cathode metal portion 1021 of the heat sink 102 is connected to the cathode metal layer 105 of the carrier plate 101 in a low-temperature environment, and the integrated circuit heat dissipation packaging structure 100 is fabricated in a low-temperature environment. This gives the integrated circuit heat dissipation packaging structure 100 the advantages of low thermal stress, low thermal resistance, compact structure, high reliability, and high heat dissipation efficiency.

[0189] In this embodiment, the electroplating bonding current is a direct current or a pulsed current, with an average current density of 0.5 ASD to 2 ASD. By adjusting the electroplating bonding current, the quality and performance of the electroplated bonding layer 103 can be controlled, thereby controlling the encapsulation stress and the thermal conductivity of the electroplated bonding layer 103, and improving encapsulation reliability.

[0190] Optionally, the electroplating bonding temperature is 20°C, 21°C, 22°C, 23°C, 24°C, 25°C, 26°C, 27°C, 28°C, 29°C, or 30°C.

[0191] Optionally, the average current density is 0.5ASD, 1ASD, 1.5ASD, or 2ASD.

[0192] The foregoing description and accompanying drawings fully illustrate embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the order of operation may vary. Parts and features of some embodiments may be included or substituted for parts and features of other embodiments. Embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from its scope. The scope of the present disclosure is limited only by the appended claims.

Claims

1. An integrated circuit heat dissipation packaging structure, characterized in that, include: A carrier plate, with a cathode metal layer disposed on one side of the carrier plate; A heat sink is disposed on one side of a carrier plate. The heat sink includes a cathode metal part, which is disposed opposite to and spaced apart from the cathode metal layer. An electroplated bonding layer is formed between the cathode metal part and the cathode metal layer through an electroplating bonding process to connect the heat sink and the carrier plate.

2. The integrated circuit heat dissipation packaging structure according to claim 1, characterized in that, The surfaces of the cathode metal portion and the cathode metal layer on opposite sides are both planar and parallel; or, The surface of the cathode metal part facing the cathode metal layer includes multiple strip-shaped protrusions and multiple strip-shaped grooves arranged side by side. The strip-shaped protrusions and strip-shaped grooves are arranged alternately and connected. The plane formed by the highest points of the multiple strip-shaped protrusions and the plane formed by the lowest points of the multiple strip-shaped grooves are both parallel to the surface of the cathode metal layer facing the cathode metal part.

3. The integrated circuit heat dissipation packaging structure according to claim 1 or 2, characterized in that, The bonding area between the cathode metal portion and the cathode metal layer is 1 cm². 2 Up to 25cm 2 .

4. The integrated circuit heat dissipation packaging structure according to claim 1 or 2, characterized in that, The distance between the surfaces of the cathode metal part and the cathode metal layer on opposite sides is 0.2 mm to 1 mm.

5. The integrated circuit heat dissipation packaging structure according to claim 1 or 2, characterized in that, Also includes: An electronic device is mounted on a carrier plate, with the electronic device and a heat sink located on opposite sides of the carrier plate, respectively.

6. A method for heat dissipation packaging of an integrated circuit, used to prepare an integrated circuit heat dissipation packaging structure as described in any one of claims 1 to 5, characterized in that, Encapsulation methods include: Prepare a heat sink with a cathode metal section; A cathode metal layer is prepared on one side of the carrier plate. The cathode metal part and the cathode metal layer are connected by an electroplating bonding process.

7. The packaging method according to claim 6, characterized in that, In the electroplating bonding process, the electroplating bonding solution uses a copper methanesulfonate system or a copper sulfate system.

8. The packaging method according to claim 7, characterized in that, When the electroplating bonding solution uses a copper methanesulfonate system... The electroplating bonding solution comprises: 200 g / L to 260 g / L copper methanesulfonate, 60 g / L to 100 g / L methanesulfonic acid, 30.9 mg / L to 61.7 mg / L hydrochloric acid, 100 mg / L to 300 mg / L wetting agent, 2 mg / L to 5 mg / L accelerator, and 2 mg / L to 6 mg / L leveling agent; or, The electroplating bonding solution comprises: 200 g / L to 260 g / L copper methanesulfonate, 60 g / L to 100 g / L methanesulfonic acid, 49.4 mg / L to 98.9 mg / L sodium chloride, 100 mg / L to 300 mg / L wetting agent, 2 mg / L to 5 mg / L accelerator, and 2 mg / L to 6 mg / L leveling agent.

9. The packaging method according to claim 7, characterized in that, When the electroplating bonding solution uses a copper sulfate system, the electroplating bonding solution includes: 120 g / L to 180 g / L copper sulfate, 50 g / L to 100 g / L sulfuric acid, 100 mg / L to 300 mg / L wetting agent, 5 mg / L to 10 mg / L accelerator and 2 mg / L to 6 mg / L leveling agent.

10. The packaging method according to any one of claims 6 to 9, characterized in that, Integrated circuit thermal packaging structures include electronic devices; Before the step of connecting the cathode metal portion and the cathode metal layer via electroplating bonding, the packaging method further includes: connecting the electronic device to the side of the carrier board away from the cathode metal layer; insulating and protecting the surfaces of the carrier board and the electronic device, exposing the cathode metal layer; or, After the step of connecting the cathode metal portion and the cathode metal layer through an electroplating bonding process, the packaging method further includes: connecting the electronic device to the side of the carrier plate away from the cathode metal layer.

11. The packaging method according to any one of claims 6 to 9, characterized in that, The electroplating bonding process is carried out in an electroplating tank, which is equipped with a jetting device and / or an ultrasonic generator. The jetting direction of the jetting device is toward the bonding region between the cathode metal part and the cathode metal layer, and the jetting flow rate is 0.6 L / min to 2 L / min; An ultrasonic generator is used to emit ultrasonic waves with frequencies ranging from 50 kHz to 100 kHz.

12. The packaging method according to any one of claims 6 to 9, characterized in that, In the electroplating bonding process, the electroplating bonding temperature is 20℃ to 30℃; the electroplating bonding current is direct current or pulse current, with an average current density of 0.5ASD to 2ASD.

13. The packaging method according to any one of claims 6 to 9, characterized in that, Before the step of connecting the cathode metal portion and the cathode metal layer via electroplating bonding process, the packaging method further includes: The surfaces of the cathode metal part and the opposite side of the cathode metal layer are pretreated.

14. The packaging method according to claim 13, characterized in that, The steps of pretreating both the cathode metal portion and the surfaces on opposite sides of the cathode metal layer include: The surfaces of both the cathode metal portion and the opposite sides of the cathode metal layer are sequentially subjected to pickling, micro-etching, and activation; or, The surfaces of the cathode metal part and the opposite side of the cathode metal layer are chemically polished, cleaned and activated in sequence.

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