Dual-phase-change chip heat dissipation device

Abstract

The invention relates to a dual-phase change chip heat dissipation device which comprises a cover plate, a phase change bottom plate and a chip bottom plate which are sequentially arranged from top to bottom, a cooling liquid connector is connected and installed on the cover plate and used for achieving inflow and outflow of cooling liquid, a chip core is installed on the chip bottom plate, and the chip core is tightly attached to the phase change bottom plate; the phase change bottom plate is accommodated in the cover plate, a first phase change space for realizing uniform diffusion of heat is arranged in the phase change bottom plate, and the first phase change space is filled with liquid and is used for absorbing heat from the chip core and then generating phase change to generate steam; a second phase change space is formed by the space between the phase change bottom plate and the cover plate and is used for circulating cooling liquid and taking away steam heat at the top in the first phase change space through phase change. Compared with the prior art, the radiator has the advantages of dual-phase-change heat exchange, high heat dissipating capacity, high heat dissipating efficiency, compact structure and the like.

Description

Technical Field

[0001] This invention relates to the field of chip heat dissipation technology, and in particular to a dual phase change chip heat dissipation device. Background Technology

[0002] With the rapid development of artificial intelligence and chip technology, the power density of chips is growing exponentially. However, chips generate a lot of heat during operation, and the accumulation of heat over a long period of time can cause the chip to overheat, which not only increases the power consumption of the chip but also affects its lifespan. Therefore, research on chip heat dissipation is of paramount importance.

[0003] Currently, chip heat dissipation technologies include liquid cooling and vapor chamber (VC) heat dissipation. Liquid cooling actively removes the heat generated during chip operation by circulating a liquid cooling medium. Liquid cooling is highly efficient and stable, but it is costly and carries the risk of leakage. A vapor chamber is a vacuum cavity with a fine internal structure, usually made of oxygen-free copper and filled with pure water as the working fluid. When heat is conducted from the heat source to the evaporation zone, the coolant in the cavity begins to vaporize after being heated in a low-vacuum environment. It absorbs heat energy and rapidly expands to fill the cavity. When the gaseous working medium comes into contact with the low-temperature area, it condenses and releases heat. The condensate flows back to the heat source through a capillary structure made of sintered copper powder or copper mesh, forming a circulation. VC heat chambers have high thermal conductivity and uniform heat distribution, but they are limited to planar shapes. Summary of the Invention

[0004] The purpose of this invention is to overcome the defects of the prior art and provide a dual phase change chip heat dissipation device that can achieve high-efficiency heat exchange while having a simple and compact structure.

[0005] The objective of this invention can be achieved through the following technical solution: a dual phase change chip heat dissipation device, comprising a cover plate, a phase change base plate and a chip base plate arranged sequentially from top to bottom, wherein a coolant connector is connected and installed on the cover plate to realize the inflow and outflow of coolant, and a chip core is installed on the chip base plate, wherein the chip core is tightly attached to the phase change base plate; The phase change base plate is housed inside the cover plate. The phase change base plate has a first phase change space for achieving uniform heat diffusion. The first phase change space is filled with liquid, which absorbs heat from the chip core and then undergoes a phase change to generate steam. The space between the phase change base plate and the cover plate constitutes a second phase change space, which is used to circulate coolant and undergo phase change to remove the steam heat from the top of the first phase change space.

[0006] The chip core can be in the form of a bare die or with a package. When the chip core is in the form of a bare die, a thermal interface material, such as thermal grease, thermal gel, thermal phase change material or high thermal conductivity metal coating, is applied or sprayed onto the bare die. When the chip core has a package, a thermal interface material or thermal pad is applied to the upper surface of the package.

[0007] In addition, the coolant connector is connected to a coolant conduit to allow coolant to enter and exit. A pair of interfaces are provided on the cover plate for coolant flow. The cover plate and the coolant connector are connected at the interfaces. The connection method is selected from one of thread, welding or snap fastening. The cover plate is also provided with a limiting step to achieve sealing of the second phase change space and positioning of the phase change base plate.

[0008] Furthermore, the phase change base plate has a second phase change surface on the side facing the cover plate, and a boss on the side facing the chip base plate. The first phase change space has a first phase change surface at the bottom corresponding to the inner side of the boss. The first phase change space has a support column to accelerate the efficiency of the condensed liquid flowing back. The first phase change surface is provided with microrib structure and / or support column and / or recess; The second phase change surface is provided with a heat exchange bottom surface and / or a micro-rib structure and / or a recess.

[0009] Among them, the microrib structure is selected from one or more of the microrib structure or microrib column structure, the shape of the microrib unit of the microrib structure is selected from one of the linear, sine wave, cosine wave, tangent wave, triangular wave, rectangular wave or trapezoidal wave, and the microrib structure adopts one of the linear arrangement of microrib units or the mirror symmetrical arrangement of microrib units. The cross-sectional shape of the microribbed column structure is selected from one or more of the following: circular, elliptical, triangular, rectangular, parallelogram, trapezoidal, or polygonal.

[0010] Furthermore, the area of ​​the protrusion is S1, the area of ​​the chip core is S2, and the range of values ​​for S1 and S2 is 0 < S2 < S1. The height of the protrusion is H3, and the value of H3 is in the range of H3≥0. When H3 equals 0, the side of the phase change substrate facing the chip substrate is a smooth and flat surface. Among them, H3 greater than 0 is the preferred setting.

[0011] Furthermore, the axial shape of the support column is selected from one or more of a straight column, a trapezoidal column, or a stepped column, wherein the proportion of the trapezoidal column shape to the straight column shape is V2, and the value of V2 is in the range of 0≤V2≤100%. When V2 equals 0, the axial shape of the support column is a straight column; when V2 equals 100%, the axial shape of the support column is a trapezoidal column; and when V2 is greater than 0 and less than 100%, the axial shape of the support column is a stepped column.

[0012] Specifically, the trapezoidal column shape can be located at any position of the straight column shape, i.e., the top, middle or bottom, and the stepped column can be more easily inserted between the micro-rib structures on the first phase change surface. The cross-sectional shape of the support column is selected from one or more of the following: circular, elliptical, triangular, rectangular, trapezoidal, star-shaped, crescent-shaped, parallelogram, or polygonal.

[0013] Furthermore, the structural treatment of the support column is selected from one or more of the following: surface capillary structure, integral capillary structure, or surface groove engraving. The surface capillary structure treatment involves laying a layer of capillary structure on the surface of the support column. The overall capillary structure treatment involves the support column being composed of pure capillary structures. The surface groove treatment involves carving uniformly distributed grooves of the same depth vertically or spirally downward along the axial direction on the surface of the support column. These grooves are used to guide the liquid to flow downward along the axial direction of the support column.

[0014] Furthermore, the inner wall of the first phase change space is uniformly covered with a capillary surface, and a condensation groove is provided at the top of the first phase change space to accelerate the condensation of steam into liquid. The condensed liquid flows down the inclined surface of the condensation groove and is absorbed by the capillary surface. The surface of the condensation groove is hydrophobically treated.

[0015] The processing method for the capillary surface is selected from one of copper mesh weaving, copper powder sintering, or metal foam.

[0016] Furthermore, when the second phase change surface is provided with a microrib structure, the distance between the top of the microrib structure and the cover plate is D1, and the value range of D1 is D1≥0; When D1 is greater than 0, pool boiling heat exchange occurs in the second phase change space; when D1 is equal to 0, flow boiling heat exchange occurs in the second phase change space.

[0017] Among them, D1 equals 0, which is the preferred setting.

[0018] Furthermore, when the second phase change surface is provided with a heat exchange bottom surface and / or a micro-rib structure, a capillary structure layer is covered on the heat exchange bottom surface and the micro-rib structure. The thickness of the capillary structure layer covering the heat exchange bottom surface is L2, and the value of L2 is L2≥0. When L2 equals 0, the heat exchange bottom surface is a smooth metal surface. L2 is greater than 0, which is the preferred setting. The volume ratio of the capillary layer covering the microrib structure to the covered microrib structure is V1, where V1 ranges from 0 to 100%. When V1 equals 0, the outer layer of the microrib structure is a smooth metal surface; when V1 equals 100%, the microrib structure is a pure capillary structure.

[0019] Furthermore, when the second phase change surface is provided with a concave hole, the depth of the concave hole on the second phase change surface is H2, and the value range of H2 is 0≤H2<C1+L2, where C1 is the wall thickness of the phase change base plate, and the value range of C1 is C1>0.

[0020] It can be seen that when H2 equals 0, the second phase change surface has no concave holes, and when H2 does not equal 0, the second phase change surface has concave holes. When L2 equals 0, the concave hole is directly laid on the smooth metal surface, that is, 0 < H2 < C1; When L2 is greater than 0, H2 is selected from one of the following three cases: 0 < H2 < L2, H2 = L2, L2 < H2 < L2 + C1.

[0021] Furthermore, when the first phase change surface is provided with a concave hole, the depth of the concave hole on the first phase change surface is set to H1, and the value range of H1 is 0≤H1<C1+L1, where L1 is the thickness of the capillary surface, and the value range of L1 is L1>0.

[0022] It can be seen that when H1 equals 0, there are no pores on the first phase transition surface. When H1 is not equal to 0, H1 is selected from one of the following three cases: 0 < H1 < L1, H1 = L1, L1 < H1 < L1 + C1.

[0023] The working principle of this invention to achieve dual phase transition (first phase transition and second deformation) is as follows: the first phase transition occurs in the first phase transition space. The liquid inside the first phase transition space absorbs heat from the chip core on the first phase transition surface and undergoes a phase transition to produce steam. The steam carries heat and fills the entire first phase transition space and moves upward to the top, where it condenses into liquid. Under the action of surface tension, the condensed liquid flows back to the first phase transition surface along the support column and capillary surface. The second phase change occurs in the second phase change space. The coolant enters the second phase change space through a coolant connector on one side. The coolant flows continuously on the second phase change surface and undergoes a phase change to remove the heat from the steam at the top of the first phase change space. Then the coolant flows out through the coolant connector on the other side. The dual phase change cycle, achieved through the first and second phase change surfaces, achieves efficient heat dissipation.

[0024] Compared with the prior art, the present invention has the following advantages: This invention comprises a cover plate, a phase-change substrate, and a chip substrate arranged sequentially from top to bottom. The chip core on the chip substrate is tightly fitted to the phase-change substrate, which is housed within the cover plate. The phase-change substrate contains a first phase-change space for uniform heat diffusion, filled with liquid that absorbs heat from the chip core and undergoes a phase change to generate steam. The space between the phase-change substrate and the cover plate constitutes a second phase-change space, through which coolant flows and undergoes a phase change to remove heat from the steam at the top of the first phase-change space. This dual phase change achieves high-efficiency heat exchange, offering advantages such as high heat dissipation and a simple, compact structure.

[0025] The present invention provides a second phase change surface on the side of the phase change base plate facing the cover plate, and a boss on the side of the phase change base plate facing the chip base plate. The first phase change surface is provided at the bottom corresponding to the inner side of the boss in the first phase change space. After the liquid on the first phase change surface undergoes phase change and heats up, it carries away the heat of the chip core. The heat in the phase change base plate is rapidly diffused to the entire first phase change space. Subsequently, the coolant on the second phase change surface undergoes phase change and continuously flows to carry away the heat of the phase change base plate, thereby achieving efficient dual phase change heat transfer.

[0026] This invention designs support columns within the first phase change space to further accelerate the return of condensed liquid. Uniformly distributed condensation grooves are set at the top of the first phase change space, with hydrophobic surfaces. These grooves effectively accelerate the condensation of vapor into liquid, allowing the condensed liquid to flow down the inclined surface of the grooves and be absorbed by capillary action. Furthermore, protrusions on the phase change base plate accurately locate the heat center. This integrated design of the phase change base plate combines the advantages of a heat spreader (high thermal conductivity, uniform heat distribution) and a cooling plate (high heat dissipation efficiency, stable operation), reducing the thermal intermediaries in the heat transfer process and further increasing chip heat dissipation efficiency. It also features a simple structure and saves space. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of a heat dissipation device for a dual phase change chip. Figure 2 This is a schematic diagram of the coolant connector structure; Figure 3 This is a schematic diagram of the upper surface of the cover plate; Figure 4 This is a schematic diagram of the lower surface of the cover plate; Figure 5 This is a schematic diagram of the internal structure of the phase change substrate; Figure 6 This is a partial schematic diagram of the second phase transition surface; Figure 7 This is a partial schematic diagram of the first phase transition surface; Figure 8 This is a schematic diagram of the condensation groove structure; Figure 9 Schematic diagram of micro-ribbed column structure and concave hole; Figure 10 This is a schematic diagram of the microrib structure; Figure 11 This is a schematic diagram showing the distance between the top of the microrib structure and the cover plate; Figure 12 A schematic diagram of the concave hole structure on the second phase change surface; Figure 13 A schematic diagram of the concave hole structure on the surface of the first phase transition; Figure 14 This is a schematic diagram of the shape of the supporting column; Figure 15 This is a top view of the first phase transition surface; Figure 16 This is a schematic diagram of the lower surface of the phase change substrate; Figure 17 This is a schematic diagram of the upper surface of the chip substrate; Figure 18 This is a schematic diagram showing the height of the boss; Figure 19 This is a cross-sectional view of the heat dissipation device assembly for a dual phase change chip. Explanation of markings in the diagram: 1. Coolant connector; 2. Cover plate; 201. Interface; 202. Second phase change space; 203. Limiting step; 3. Phase change base plate; 301. Second phase change surface; 302. Micro-rib structure; 303. Heat exchange bottom surface; 304. Recessed hole; 305. First phase change space; 306. Support column; 307. Boss; 308. First phase change surface; 309. Capillary structure layer; 310. Capillary surface; 311. Condensation groove; 4. Chip baseboard; 401. Chip core. Detailed Implementation

[0028] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0029] Example This embodiment provides a dual phase-change chip heat dissipation device, such as... Figure 1 As shown, it includes a coolant connector 1, a cover plate 2, a phase change base plate 3, and a chip base plate 4 arranged from top to bottom.

[0030] like Figure 2 As shown, the two coolant connectors 1 are connected to the cover plate 2 respectively, and are used to connect the coolant conduit and realize the inflow and outflow of coolant.

[0031] like Figure 3 and Figure 4 As shown, a pair of interfaces 201 are provided on the cover plate 2 for the flow of coolant. The connection method between the cover plate 2 and the coolant connector 1 at the interface 201 is selected from one of thread, welding or snap fastening. The phase change base plate 3 is located inside the cover plate 2. The space between the cover plate 2 and the phase change base plate 3 is the second phase change space 202. The second phase change space 202 is the space for coolant flow and phase change heat transfer. The cover plate 3 is provided with a limiting step 203 to achieve the sealing of the second phase change space 202 and the positioning of the phase change base plate 3.

[0032] The chip base plate 4 has a chip core 401 in the central area. The chip base plate 4 is tightly connected to the cover plate 2. The chip core 401 is tightly attached to the phase change base plate 3. The chip core 401 can be in the form of a bare die or with a package shell.

[0033] In specific applications, when the chip core 401 is in the form of a bare die, a thermal interface material, such as thermal grease, thermal gel, thermal phase change material, or a high thermal conductivity metal coating, is applied or sprayed onto the bare die to improve the heat exchange efficiency between the chip core 401 and the phase change base plate 3. When the chip core 401 has a package shell, a thermal interface material or thermal pad is applied to the upper surface of the package shell to achieve a tight fit between the upper surface of the package shell and the phase change base plate 3, further ensuring the stability of the heat exchange process.

[0034] like Figure 5 As shown, the phase change base plate 3 has a second phase change surface 301 (used to realize phase change heat transfer) on the side facing the cover plate 2, and a first phase change space 305 is provided inside the phase change base plate 3 to realize uniform heat diffusion. The phase change base plate 3 has a boss 307 on the side facing the chip base plate 4. In specific applications, a first phase change surface 308 (for achieving local phase change heat transfer) is provided inside the first phase change space 305 on the inner side of the boss 307. A capillary surface 310 (the processing method of the capillary surface is selected from copper mesh weaving, copper powder sintering or metal foam) is uniformly covered on the inner wall of the first phase change space 305. A support column 306 is also provided in the first phase change space 305 to accelerate the efficiency of the condensed liquid flow back.

[0035] like Figure 6 As shown, the second phase change surface 301 is provided with a heat exchange bottom surface 303 and / or a micro-rib structure 302 and / or a concave hole 304. like Figure 7 As shown, the first phase change surface 308 is provided with a microrib structure 302 and / or a support column 306 and / or a recess 304.

[0036] like Figure 8 As shown, the top of the first phase change space 305 is provided with uniformly distributed condensation grooves 311. The surface of the condensation grooves 311 is hydrophobically treated. When the steam in the first phase change space 305 rises to the top, it turns into liquid after contacting the condensation grooves 311. The surface of the condensation grooves 311, which is hydrophobically treated and has a certain slope, accelerates the flow of the liquid. The liquid flows to the lowest point of the condensation grooves 311 and is carried away by the capillary surface 310. like Figure 9 and Figure 10 As shown, the microrib structure 302 is selected from one or more of the microrib structure or microrib column structure. In specific applications, the shape of the microrib unit of the microrib structure is selected from one of the following: linear, sine wave, cosine wave, tangent wave, triangular wave, rectangular wave or trapezoidal wave. The microrib structure adopts one of the following: the microrib unit is arranged linearly in sequence or the microrib unit is arranged in a mirror symmetric manner. In addition, the cross-sectional shape of the microribbed column structure is selected from one or more of the following: circular, elliptical, triangular, rectangular, parallelogram, trapezoidal, or polygonal.

[0037] like Figure 11 As shown, the distance between the top of the microrib structure 302 on the second phase change surface 301 and the cover plate 2 is set as D1, and the value range of D1 is D1≥0. In specific applications, when D1 is greater than 0, pool boiling heat exchange occurs in the second phase change space 202, and when D1 is equal to 0, flow boiling heat exchange occurs in the second phase change space 202. Here, D1 equal to 0 is the preferred implementation method.

[0038] Furthermore, when a micro-rib structure 302 and / or a heat exchange bottom surface 303 are provided on the second phase change surface 301, a capillary structure layer 309 can be designed to cover the micro-rib structure 302 and the heat exchange bottom surface 303. In specific applications, the volume ratio of the capillary structure on the micro-rib structure 302 covering the capillary structure layer 309 is set as V1. The value range of V1 is 0≤V1≤100%. When V1 equals 0, it indicates that the outer layer of the micro-rib structure 302 is a smooth metal surface. When V1 equals 100%, the surface micro-rib structure 302 is a pure capillary structure.

[0039] like Figure 12As shown, in specific applications, the thickness of the capillary layer 309 covering the heat exchange bottom surface 303 is set to L2. The value range of L2 is L2≥0. When L2 equals 0, the heat exchange bottom surface 303 is a smooth metal surface. It should be noted that L2 greater than 0 is a preferred implementation method to enhance heat exchange efficiency.

[0040] When the second phase change surface 301 is provided with a recessed hole 304, the wall thickness of the phase change base plate 3 is set to C1, and the value range of C1 is C1 > 0. The depth of the recessed hole 304 on the second phase change surface 301 is set to H2, and the value range of H2 is 0 ≤ H2 < C1 + L2. When H2 equals 0, it indicates that the second phase change surface 301 has no recessed hole 304. When H2 is not equal to 0, it indicates that the second phase change surface 301 is provided with a recessed hole 304. In practical applications, when L2 equals 0, the concave hole 304 is directly laid on the smooth metal surface, and the value range of H2 is 0 < H2 < C1. When L2 is greater than 0, the value range of H2 is selected from one of the following three cases: 0 < H2 < L2, H2 = L2, L2 < H2 < L2 + C1. The position of the bottom surface of the concave hole 304 changes with the change of the value range of H2.

[0041] like Figure 13 As shown, when the first phase change surface 308 is provided with a concave hole 304, the thickness of the capillary surface 310 is set to L1, and the value range of L1 is L1>0. The depth of the concave hole 304 on the first phase change surface 308 is set to H1, and the value range of H1 is 0≤H1<C1+L1. When H1 equals 0, it indicates that the first phase change surface does not have a concave hole 304. When H1 is not equal to 0, H1 is selected from one of the following three cases: 0 < H1 < L1, H1 = L1, L1 < H1 < L1 + C1. The position of the bottom surface of the concave hole 304 changes with the range of H1. In specific applications, the cross-sectional shape of the concave hole 304 can be selected from one or more of a parallelogram, trapezoid, or triangle.

[0042] like Figure 14 As shown, the axial shape of the support column 306 can be selected from one or more of a straight column, a trapezoidal column, or a stepped column; wherein, the proportion of the trapezoidal column shape to the straight column shape is set as V2, and the value of V2 is in the range of 0≤V2≤100%. When V2 equals 0, the axial shape of the support column 306 is a straight column; when V2 equals 100%, the axial shape of the support column 306 is a trapezoidal column, which is used to accelerate the flow of liquid; when V2 is greater than 0 and less than 100%, the axial shape of the support column 306 is a stepped column. In practical applications, the trapezoidal column shape can be located at any position of the straight column shape, i.e., the top, middle or bottom. The stepped column can more easily adjust the radial dimension of the support column 306, so as to reliably insert between the microrib structures 302 on the first phase change surface 308. In addition, the cross-sectional shape of the support column 306 is selected from one or more of the following: circular, elliptical, triangular, rectangular, trapezoidal, star-shaped, crescent-shaped, parallelogram-shaped, or polygonal. The structural treatment of the support column 306 can be selected from one or more of the following: surface capillary structure, integral capillary structure, or surface groove engraving. Specifically, the surface capillary structure treatment involves laying a layer of capillary structure on the surface of the support column 306, and the overall capillary structure treatment involves the support column 306 being composed entirely of pure capillary structure. The surface groove treatment involves engraving uniformly distributed grooves of the same depth vertically or spirally downward along the axial direction on the surface of the support column 306. The grooves are used to guide the liquid to flow downward along the axial direction of the support column.

[0043] like Figure 15 As shown ( Figure 15 The left image shows a schematic diagram of the microrib structure 302 using a microrib column structure, and the right image shows a schematic diagram of the microrib structure using a microrib sheet structure. The microrib structures 302 are regularly arranged on the first phase change surface 308, and a small number of support columns 306 are orderly interspersed between the microrib structures 302. The concave holes 304 are evenly distributed in the gaps between the microrib structures 302 and the support columns 306.

[0044] like Figure 16 , 17 As shown, the boss 307 is used to concentrate the liquid in the first phase change space onto the first phase change surface 308. The boss 307 is in close contact with the chip core 401, which is conducive to concentrated heat exchange. The area of ​​the boss 307 is set as S1, and the area of ​​the chip core 401 is set as S2. The range of values ​​for S1 and S2 is 0 < S2 < S1. like Figure 18 As shown, the height of the boss 307 is set to H3, and the value range of H3 is H3≥0. When H3 equals 0, it indicates that the side of the phase change base plate 3 facing the chip base plate 4 is a smooth and flat surface. It should be noted that H3 greater than 0 is a preferred choice that is beneficial to increasing heat exchange efficiency.

[0045] like Figure 19As shown, the application principle of the present invention to achieve dual phase change heat dissipation is as follows: the first phase change occurs in the first phase change space 305. The first phase change space 305 is filled with liquid. The liquid absorbs heat from the chip core 401 on the first phase change surface 308 and undergoes a phase change to generate steam. The steam carries heat and fills the entire first phase change space 305 and moves upward to the top, where it condenses into liquid. Under the action of surface tension, the liquid flows back to the first phase change surface 308 along the support column 306 and the capillary surface 310. The second phase change occurs in the second phase change space 202. The coolant enters the second phase change space 202 through the coolant connector 1 on one side. The coolant in the second phase change space 202 flows continuously on the second phase change surface 301 and undergoes a phase change, taking away the heat of the steam at the top of the first phase change space 305. Then the coolant flows out through the coolant connector 1 on the other side. The first phase change surface 308 and the second phase change surface 301 undergo a dual phase change and cycle repeatedly to achieve efficient heat dissipation.

[0046] The above description of the embodiments is provided to enable those skilled in the art to understand and use the invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the above embodiments, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the invention should be within the protection scope of the present invention.

Claims

1. A dual phase-change chip heat dissipation device, characterized in that, It includes a cover plate (2), a phase change base plate (3) and a chip base plate (4) arranged from top to bottom. A coolant connector (1) is connected and installed on the cover plate (2) to realize the inflow and outflow of coolant. A chip core (401) is installed on the chip base plate (4). The chip core (401) is closely attached to the phase change base plate (3). The phase change base plate (3) is housed inside the cover plate (2). The phase change base plate (3) is provided with a first phase change space (305) for achieving uniform heat diffusion. The first phase change space (305) is filled with liquid, which absorbs heat from the chip core (401) and then undergoes a phase change to generate steam. The space between the phase change base plate (3) and the cover plate (2) constitutes a second phase change space (202), which is used to circulate coolant and undergo phase change to remove the steam heat from the top of the first phase change space (305).

2. The dual phase-change chip heat dissipation device according to claim 1, characterized in that, The phase change base plate (3) has a second phase change surface (301) on the side facing the cover plate (2), and a boss (307) on the side facing the chip base plate (4). The first phase change space (305) has a first phase change surface (308) at the bottom corresponding to the inside of the boss (307). The first phase change space (305) has a support column (306) to accelerate the efficiency of the condensed liquid flow back. The first phase change surface (308) is provided with micro rib structure (302) and / or support column (306) and / or recess (304). The second phase change surface (301) is provided with a heat exchange bottom surface (303) and / or a micro-rib structure (302) and / or a concave hole (304). Among them, the micro rib structure (302) is selected from one or more of the micro rib structure or micro rib column structure, the shape of the micro rib unit of the micro rib structure is selected from one of the linear, sine wave, cosine wave, tangent wave, triangular wave, rectangular wave or trapezoidal wave, and the micro rib structure adopts one of the linear arrangement of micro rib units or the mirror symmetrical arrangement of micro rib units; The cross-sectional shape of the microribbed column structure is selected from one or more of the following: circular, elliptical, triangular, rectangular, parallelogram, trapezoidal, or polygonal.

3. The dual phase-change chip heat dissipation device according to claim 2, characterized in that, The area of ​​the protrusion (307) is S1, and the area of ​​the chip core (401) is S2. The range of values ​​for S1 and S2 is 0 < S2 < S1. The height of the boss (307) is H3, and the value range of H3 is H3≥0. When H3 equals 0, the side of the phase change base plate (3) facing the chip base plate (4) is a smooth and flat surface. H3 greater than 0 is the preferred setting.

4. The dual phase-change chip heat dissipation device according to claim 2, characterized in that, The axial shape of the support column (306) is selected from one or more of a straight column, a trapezoidal column, or a stepped column. The proportion of the trapezoidal column shape to the straight column shape is V2, and the value of V2 is 0≤V2≤100%. When V2 equals 0, the axial shape of the support column (306) is a straight column. When V2 equals 100%, the axial shape of the support column (306) is a trapezoidal column. When V2 is greater than 0 and less than 100%, the axial shape of the support column (306) is a stepped column.

5. A dual phase-change chip heat dissipation device according to claim 4, characterized in that, The structural treatment of the support column (306) is selected from one or more of the following: surface capillary structure, integral capillary structure, or surface groove engraving. The surface capillary structure treatment method is to lay a capillary structure on the surface of the support column (306). The overall capillary structure treatment method is that the support column (306) is composed of pure capillary structure. The surface groove treatment method is to carve uniformly distributed grooves of the same depth vertically or spirally downward along the axial direction on the surface of the support column (306). The grooves are used to guide the liquid to flow downward along the axial direction of the support column.

6. The dual phase-change chip heat dissipation device according to claim 2, characterized in that, The inner wall of the first phase change space (305) is uniformly covered with a capillary surface (310), and a condensation groove (311) is provided on the top of the first phase change space (305) to accelerate the condensation of steam into liquid. The condensed liquid flows down the inclined surface of the condensation groove (311) and is absorbed by the capillary surface (310). The surface of the condensation groove (311) is hydrophobically treated.

7. A dual phase-change chip heat dissipation device according to claim 2, characterized in that, When the second phase change surface (301) is provided with a micro-rib structure (302), the distance between the top of the micro-rib structure (302) and the cover plate (2) is D1, and the value range of D1 is D1≥0; When D1 is greater than 0, pool boiling heat exchange occurs in the second phase change space (202), and when D1 is equal to 0, flow boiling heat exchange occurs in the second phase change space (202).

8. A dual phase-change chip heat dissipation device according to claim 2, characterized in that, When the second phase change surface (301) is provided with a heat exchange bottom surface (303) and / or a micro-rib structure (302), a capillary structure layer (309) is covered on the heat exchange bottom surface (303) and the micro-rib structure (302). The thickness of the capillary structure layer (309) covering the heat exchange bottom surface (303) is L2, and the value of L2 is L2≥0. When L2 equals 0, the heat exchange bottom surface (303) is a smooth metal surface. L2 being greater than 0 is the preferred setting. The volume ratio of the capillary layer (309) covering the microrib structure (302) to the covered microrib structure (302) is V1, and the value of V1 is 0≤V1≤100%; When V1 equals 0, the outer layer of the microrib structure (302) is a smooth metal surface; when V1 equals 100%, the microrib structure (302) is a pure capillary structure.

9. A dual phase-change chip heat dissipation device according to claim 2, characterized in that, When the second phase change surface (301) is provided with a concave hole (304), the depth of the concave hole (304) on the second phase change surface (301) is H2, and the value range of H2 is 0≤H2<C1+L2, where C1 is the wall thickness of the phase change base plate (3), and the value range of C1 is C1>0.

10. A dual phase-change chip heat dissipation device according to claim 6, characterized in that, When the first phase change surface (308) is provided with a concave hole (304), the depth of the concave hole (304) on the first phase change surface (308) is set to H1, and the value range of H1 is 0≤H1<C1+L1, where L1 is the thickness of the capillary surface (310), and the value range of L1 is L1>0.

Images