Wafer level polarization of electro-optic phase modulators

Abstract

A method of manufacturing an integrated electro-optic phase modulator array is described. The method may include providing a first substrate. The first substrate may include an array of interconnects. The method may include arranging an array of electro-optic phase modulators on a surface of a first substrate. Each electro-optic phase modulator may include a polymer optical stack, a semiconductor substrate, an electrical input, an optical input, and / or an optical output. The array of interconnects in each modulator may include electrical interconnects, electrical bypasses, and / or optical interconnects. Electrical interconnects may be connected to respective electrical inputs. The electrical bypass may connect at least one pair of adjacent modulators. Optical interconnects may connect respective optical input terminals and optical output terminals. Each modulator may be connected in series to a respective fuse arranged along an electrical interconnection between a respective electrical input and a voltage source.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of U.S. Provisional Application No. 63 / 527,984, filed July 20, 2023, the entire contents of which are incorporated herein by reference. Background Technology

[0003] The disclosed inventions generally relate to polymer modulators. Polymer modulators have become very popular in current technological developments. Polymer photonics technology with customized cores and claddings offers a number of significant advantages over existing technologies. Among these many advantages, some of the most significant is the ability to enable highly efficient 3-layer modulators with high performance (multi-GHz) and very low voltage operation, allowing for direct drive without the need for drive circuitry. While this technology has been commercialized, it has not been optimized. That is, it has not met low-cost targets or space / size requirements, and a significant amount of time is spent aligning, placing, packaging, and testing the components.

[0004] Much recent work on polymer modulators has focused on Si organic hybrids (SOH), often referred to as Si trench modulators. These modulators are popular due to their short length (approximately 1 mm) and high monolayer r. 33 The coefficient exhibits a very small V π -L product. Due to the fact that only electro-optic (EO) polymers are used in the structure, polarization is efficient and a monolayer r is also achieved in the device. 33 (Values ​​achieved in Teng-Man measurements). This contrasts with a typical 3-layer modulator (cladding / core / cladding), where polarization efficiency is low due to voltage division between the three layers. Typically, dielectric breakdown occurs in the cladding before full polarization can be achieved in the core.

[0005] Wafer-level polarization, which polarizes the entire wafer, improves efficiency in the semiconductor industry. High-efficiency polarization typically utilizes multiple slot modulator devices (e.g., hundreds or thousands of slot modulator devices) to polarize the entire wafer. A high-voltage constant-voltage source providing high voltage can be connected in series with multiple slot modulator devices to power each device for simultaneous polarization.

[0006] When one of the plurality of slot modulator devices shorts, the current in the circuit will travel through the shorted device. At the same time, when one slot modulator device shorts, the other slot modulator devices can no longer have any current passing through them or any voltage drop across them. Since the Joule heating caused by the current is proportional to the square of the current, the increased current will cause high Joule heating on the fuse connected to the shorted device. The fuse connected to the entire circuit can break and open the circuit at the high Joule heating to protect each device in the wafer level polarization. If the fuse connected to the entire circuit breaks and opens the entire circuit, the opening of the entire circuit can cause the other slot modulator devices to also stop working since there is now no current passing through the other slot modulator devices.

[0007] The present invention can include a plurality of fuses connected in parallel. Each fuse in the present invention can be connected in series to a limited number of slot modulator devices (e.g., one slot modulator device). If one fuse connected in series to a shorted slot modulator device breaks, the fuses not connected in series can still function since they can still receive current. When the fuse connected in series to the shorted slot modulator(s) breaks, the current to all the other fuses increases to take up the current that is no longer flowing through the broken fuse. However, because the current from one fuse is distributed over a large number of other fuses, the overall increase on any one fuse does not cause a spike that can break the fuse. Thus, according to one aspect, the present invention not only provides protection for the other devices and the entire circuit, but also keeps the other devices working without stopping when a short occurs. SUMMARY

[0008] Methods and systems for fabricating an integrated electro-optic phase modulator array are described. The method can include providing a first substrate. The first substrate can include an interconnect array. The method can include arranging an array of electro-optic phase modulators on a surface of the first substrate. Each electro-optic phase modulator can include a polymer optical stack, a semiconductor substrate, an electrical input, an optical input, and / or an optical output. The interconnect array in each modulator can include electrical interconnects, electrical bypasses, and / or optical interconnects. The electrical interconnects can be connected to the respective electrical inputs. The electrical bypasses can connect at least a pair of adjacent modulators. The optical interconnects can connect the respective optical inputs and optical outputs. Each modulator can be connected in series to a respective fuse arranged along the electrical interconnects between the respective electrical inputs and a voltage source.

[0009] In one aspect, a system for simultaneously polarizing a plurality of slot modulator devices from a single high voltage source is described. The system can include a single high voltage input lead, a fuse array including a plurality of fuses connected in parallel to the high voltage input lead, and a wafer including a plurality of slot modulators. Each fuse in the fuse array can have an input end connected in series to the high voltage input lead and an output end connected in series to an output cable. At least one fuse in the fuse array can have a predetermined upper limit of polarization current. If the upper limit is exceeded, the fuse can break. One or more (e.g., each) slot modulator device in the plurality of slot modulators can be connected in series to one of the fuses in the fuse array through the output cable of the fuse.

[0010] In another aspect, the system can include a high voltage input lead, a fuse array including a plurality of fuses connected in parallel to the high voltage input lead, a probe set including a plurality of probes connected in parallel, and a wafer including a plurality of slot modulators. At least one fuse (e.g., each fuse) in the fuse array can have an input end connected in series to the high voltage input lead and an output end connected in series to an output cable. At least one fuse (e.g., each fuse) in the fuse array can have a predetermined upper limit of polarization current. If the upper limit is exceeded, the fuse can break. At least one probe (e.g., each probe) in the probe set can have an input end connected in series to the output cable of a fuse in the fuse array. At least one probe (e.g., each probe) can be connected in series to a slot modulator device. A plurality of slot modulator devices in the plurality of slot modulators can be connected in series to one of the fuses in the fuse array through the probe.

[0011] In some embodiments, a high voltage source can be connected in series to the system. In some embodiments, the fuse array can be located on a carrier printed circuit board (PCB). In some embodiments, the fuse array can be equal to or more than 10,000 fuses. In some embodiments, each fuse can have a dog bone shape in top view. Preferably, the dog bone shape fuse has a blow current or break point between about 500 nA and about 1000 nA. In some embodiments, each fuse can be made of aluminum or gold. In some embodiments, the metal thickness of each fuse can be about 1 pm. In some embodiments, the outer width of each fuse can be about 100 pm. The inner width of each fuse can be between about 2 pm and about 25 pm. The inner length of each fuse can be between about 50 pm and about 200 pm. The overall length of each fuse can be between about 250 pm and about 400 pm.

[0012] In some embodiments, each slot modulator device can be a silicon organic hybrid (SOH) slot modulator.

[0013] Because at least some of the fuses are connected in parallel, when one slot modulator device shorts, the fuse connected in series to the shorted slot modulator device will break due to Joule heating. If the fuse connected in series to the shorted slot modulator device breaks, the remaining fuses connected in parallel can still function because they are still receiving current. When the fuse connected in series to the shorted slot modulator breaks under a constant voltage source, the current to all other fuses connected in parallel remains constant. Thus, the various embodiments herein not only provide protection for other devices and the entire circuit, but also keep the other devices working without stopping. BRIEF DESCRIPTION OF DRAWINGS

[0014] The foregoing summary, as well as the following detailed description of the preferred embodiments of the present application, will be better understood when read in conjunction with the accompanying drawings, in which:

[0015] Figure 1 is a diagram illustrating the creation of an optical output with data by passing an optical input through an optical modulator device (e.g., a Mach-Zehnder interferometer).

[0016] Figure 2A is a partial side cross-sectional view of an integrated electro-optical circuit.

[0017] Figure 2B is a partial cross-sectional view of the integrated electro-optical circuit of Figure 2A

[0018] Figure 3 is a schematic diagram of an embodiment of the system of the present application for polarizing a plurality of slot modulator devices, wherein each fuse in the array of fuses is connected in series to a predetermined probe on a probe card.

[0019] Figure 4 is an enlarged schematic diagram of the array of fuses of Figure 3

[0020] Figure 5 is an enlarged schematic plan view of the dog-bone shaped fuses of Figure 3 and Figure 4

[0021] Figures 6A-6B is a schematic diagram of an alternative embodiment of the system of the present application for polarizing a plurality of slot modulator devices, wherein each fuse in the array of fuses is connected in series to a pre-selected slot modulator device on a wafer. DETAILED DESCRIPTION

[0022] ​​​Electro-Optic (EO) materials enable the interaction between an applied electric field and light passing through them. The electro-optic can change the refractive index seen by the light with minimal loss. The result of having an electro-optic can be the instantaneous and accurate conversion of an electrical signal to an optical signal. Optical signals can be more suitable for long distance transmission: as digital signal speeds now reach the GHz and THz range and corresponding electrical transmission distances shrink to meters and centimeters, becoming an increasingly useful feature.

[0023] EO polymers can outperform traditional electro-optic materials (e.g., lithium niobate, indium phosphide, and silicon) in speed and sensitivity to electric fields. EO polymers are hyperpolarizable, meaning that their electron clouds are easily pulled into different shapes by an applied electric field, changing their optical properties (e.g., refractive index).

[0024] EO polymers can be polarized to become electro-optic by the application of a strong electric field as well as heat. The heated EO polymer can be soft, which allows the chromophore molecules suspended in the host polymer to align in the same direction via the polarization. Cooling the polarized material after the molecules are in place can trap them in their active state, even after the polarization field is removed.

[0025] Nonlinear optical (NLO) chromophores provide the EO activity in a polarized electro-optic polymer device. Electro-optic polymers have been studied for many years as an alternative to inorganic materials such as lithium niobate in electro-optic devices. Electro-optic devices can include, for example, external modulators for telecommunications, data communications, RF photonics, and optical interconnects, among others. Polymer electro-optic materials have shown great potential in a wide range of core applications for next-generation systems and devices, including electro-optic modulators, optical switches, phased-array radars, satellite and fiber-optic telecommunications, cable television (CATV), optical gyroscopes for applications in aviation and missile guidance, electronic countermeasures (ECM) systems, backplane interconnects for high-speed computing, ultrafast analog-to-digital conversion, landmine detection, radio frequency photonics, spatial light modulation, and all-optical (optical-to-optical) signal processing.

[0026] Many NLO molecules (chromophores) have been synthesized that exhibit high molecular electro-optic properties. The product of the molecular dipole moment (μ) and hyperpolarizability (β) is often used as a measure of molecular electro-optic performance, as the dipole is involved in the material processing. See Dalton et al., “New Class of High Hyperpolarizability Organic Chromophores and Process for Synthesizing the Same,” WO 00 / 09613.

[0027] Hyperpolarizable organic chromophores are generally formed as molecules having the structure D-pi-A, where D is an electron donor structure, A is an electron acceptor structure having a relatively higher electron affinity than the electron donor structure D, and pi is a pi-orbital conjugated bridge that freely allows the flow of electrons between the donor D and the acceptor A. Due to the difference in electron affinity between the donor D and the acceptor A, the molecule is generally linear and nominally polar. Such molecules can be polarized into alignment by the application of an electric polarization field during manufacture, with the acceptor A portion being attracted toward the positive potential and the donor D portion being attracted toward the negative potential. The molecules can then be locked into the desired alignment by cross-linking or freezing a polymer matrix in which the chromophores are embedded. Alternatively, the chromophores can be covalently bonded or otherwise substantially fixed in their polarized position.

[0028] The acceptor is an atom or group of atoms having a low reduction potential, where the atom or group of atoms can accept an electron from the donor through a pi-bridge. The acceptor (A) has a higher electron affinity than the donor (D), and thus, at least in the absence of an external electric field, the chromophore is generally polarized in the ground state with relatively more electron density on the acceptor (D). Typically, the acceptor group contains at least one electronegative heteroatom as part of a pi-bond (double or triple bond) such that a resonance structure can be drawn that moves an electron pair of the pi-bond to the heteroatom and concomitantly reduces the multiplicity of the pi-bond (i.e., a double bond is formally converted to a single bond or a triple bond is formally converted to a double bond), thereby imparting a formal negative charge to the heteroatom. The heteroatom can be part of a heterocycle. Example acceptor groups include, but are not limited to, -NO2, -CN, -CHO, COR, CO2R, -PO(OR)3, -SOR, -SO2R, and -SO3R, where R is an alkyl, aryl, or heteroaryl group. The total number of heteroatoms and carbons in the acceptor group is approximately 30, and the acceptor group can also be substituted with alkyl, aryl, and / or heteroaryl groups.

[0029] Suitable electron accepting groups "A" (also referred to in the literature as electron withdrawing groups) for use in the nonlinear optical chromophores that can be used in accordance with various embodiments of the present application include those described in published U.S. Patent Applications: US 2007 / 0260062; US 2007 / 0260063; US 2008 / 0009620; US 2008 / 0139812; US 2009 / 0005561; US 2012 / 0267583 Al (collectively referred to as "Prior Publications"), each of which is incorporated herein by reference in its entirety; and U.S. Patent Nos.: 6,584,266; 6,393,190; 6,448,416; 6,44,830; 6,514,434; 5,044,725; 4,795,664; 5,247,042; 5,196,509; 4,810,338; 4,936,645; 4,767,169; 5,326,661; 5,187,234; 5,170,461; 5,133,037; 5,106,211; and 5,006,285; each of which is also incorporated herein by reference in its entirety.

[0030] Donors include atoms or groups of atoms having a low oxidation potential, wherein the atom or group of atoms can donate an electron to the acceptor "A" through a Π-bridge. The donor (D) has a lower electron affinity than the acceptor (A), and thus, at least in the absence of an external electric field, the chromophore is generally polarized with a relatively lower electron density on the donor (D). Typically, the donor group contains at least one heteroatom having a lone pair of electrons that can conjugate with a p-orbital of an atom directly attached to the heteroatom, such that a resonance structure can be drawn that moves the lone pair of electrons into a bond with the p-orbital of the atom directly attached to the heteroatom to formally increase the multiplicity of the bond between the heteroatom and the atom directly attached to the heteroatom (i.e., a single bond is formally converted into a double bond, or a double bond is formally converted into a triple bond), whereby the heteroatom acquires a formal positive charge. The p-orbital of the atom directly attached to the heteroatom can be empty or part of a multiple bond of another atom other than the heteroatom. The heteroatom can be a substituent of an atom having a pi bond, or can be in a heterocycle. Exemplary donor groups include, but are not limited to, R2N— and R n X 1 —, wherein R is an alkyl, aryl, or heteroaryl group, X 1 is O, S, P, Se, or Te, and n is 1 or 2. The total number of heteroatoms and carbons in the donor group can be about 30, and the donor group can also be substituted with alkyl, aryl, or heteroaryl groups.

[0031] Suitable electron-donating groups "D" for use in the nonlinear optical chromophores that can be used in accordance with various embodiments of the present application include those described in published U.S. Patent Applications: US 2007 / 0260062; US 2007 / 0260063; US 2008 / 0009620; US 2008 / 0139812; US 2009 / 0005561; US 2012 / 0267583 Al (collectively, the "Prior Publications"), each incorporated by reference in its entirety; and U.S. Patent Nos.: 6,584,266; 6,393,190; 6,448,416; 6,44,830; 6,514,434; 5,044,725; 4,795,664; 5,247,042; 5,196,509; 4,810,338; 4,936,645; 4,767,169; 5,326,661; 5,187,234; 5,170,461; 5,133,037; 5,106,211; and 5,006,285; and U.S. Patent Application No. 17 / 358,960, filed June 25, 2021; each also incorporated by reference in its entirety.

[0032] A "Pi-bridge" includes an orbital through which an electron can delocalize from an electron donor (defined above) to an atom or group of atoms of an electron acceptor (defined above). Typically, the orbital will be a p orbital on a carbon atom such as those found in double (sp 2 ) or triple (sp) bonded carbon atoms in alkenes, alkynes, neutral or charged aromatic rings, and neutral or charged heteroaromatic ring systems. In addition, the orbital can be a p orbital on an atom such as boron or nitrogen. In addition, the orbital can be a p, d, or f organometallic orbital or a hybrid organometallic orbital. The atoms in the bridge that contain the orbitals through which the electrons delocalize are referred to herein as "key atoms". The number of key atoms in the bridge can be a number from 1 to about 30. The key atoms can be substituted with organic or inorganic groups. The choice of substituents can be for the purpose of improving the solubility of the chromophore in a polymer matrix, enhancing the stability of the chromophore, or for other purposes.

[0033] After polarization, an electric modulation field can be applied through the volume of the chromophore. For example, if a relatively negative electric potential is applied at the negative end of the polarized chromophore and a relatively positive electric potential is applied at the positive end, the chromophore will at least partially become non-polar. If a relatively positive electric potential is applied at the negative end and a relatively negative electric potential is applied at the positive end, the chromophore will temporarily hyperpolarize in response to the applied modulation field. In general, organic chromophores respond very quickly to the electric pulses that form the electric modulation field, and also quickly return to their previous polarity when the pulses are removed.

[0034] The regions of the polarizable superpolarizable organic chromophore generally have a variable refractive index for light. The refractive index is a function of the degree of polarization of the molecule. Thus, light passing through the active region will propagate at one rate in the first modulation state and at another rate in the second modulation state. This property, along with the relatively high sensitivity to changes in the state of the electric field and fast response times, makes the superpolarizable organic chromophore an excellent basis for constructing very high speed optical modulators, phase shifters, and the like.

[0035] EO polymer materials, as well as other ancillary materials, can be brought together and demonstrated in high speed optical modulators. Generally, the EO polymer material is spin-coated onto a silicon wafer, and standard microfabrication techniques are used to deposit and pattern metal electrodes and optical waveguides. Generally, an electro-optic modulator can include a polymer optical stack, a semiconductor substrate, an electrical input, an optical input, and / or an optical output. For example, one known optical modulator device is a Mach-Zehnder interferometer as shown in Figure 1 The optical input through the Mach-Zehnder interferometer without data can be converted to an optical output with data. The optical output is changed by changing the relative phase between the two arms. One common trick to double the effect for the same available drive voltage is to drive the two arms in opposite directions (push-pull mode). Polymers have an interesting advantage over most other electro-optic materials that are crystalline. The direction of electro-optic activity of a polymer is completely determined by the direction of the applied polarization field. By polarizing the two arms of the Mach-Zehnder in opposite directions, the resulting device automatically has push-pull operation with a single applied signal.

[0036] A plurality of electro-optic modulators can form an integrated electro-optic modulator array, which can include, for example, an interconnect array. For each modulator, the interconnect array can include an electrical interconnect, an electrical bypass, and / or an optical interconnect. The electrical interconnect can be connected to one or more electrical inputs. The electrical bypass can connect at least a pair of adjacent modulators. In an example, the optical interconnect can be connected to an optical input and an optical output.

[0037] Figure 2A and Figure 2B are respective side cross-sectional and cross-sectional views of an integrated polymer electro-optic semiconductor circuit 101 according to an embodiment. The semiconductor substrate 102 includes at least one doped layer 104 that is patterned across the semiconductor substrate to form part of a semiconductor device. At least one conductor layer 106 is patterned over the semiconductor substrate. A planarization layer 108 is disposed at least partially coplanar with the at least one conductor layer 106. A polymer optical stack 110 is disposed over the planarization layer 108.

[0038] At least one via 112 can extend at least partially through the polymer optical stack 110. The at least one via can be operatively coupled to a corresponding location on the at least one patterned conductor layer 106. A top conductor layer 114 is disposed above the polymer optical stack and is in electrical continuity with the at least one via 112.

[0039] As an alternative to the via 112, other conductors can be substituted to electrically couple the top conductor layer to at least one location on the at least one patterned conductor layer 106. For example, the at least one conductor can be formed entirely from vias, wire bonds, conductive bumps, and / or anisotropic conductive regions or by a combination of these.

[0040] The top conductor layer 114 may, for example, be formed to include a metal layer or a conductive polymer. The top conductor can be electroplated to increase its thickness. The top conductor layer can include at least one high speed electrode 116 formed as a pattern in the top conductor layer 114, the high speed electrode 116 being operatively coupled to receive a signal from the at least one via 112 or other conductive structure from a corresponding location on the at least one patterned conductor layer 106. Thus, the at least one via 112 or other conductive structure is configured to transmit an electrical signal from semiconductor circuitry formed on the semiconductor substrate 102 to the at least one high speed electrode 116 through or around the polymer optical stack 110.

[0041] According to an embodiment, the at least one patterned conductor layer 106 is configured to form a ground electrode 118 parallel to the at least one high speed electrode 116. An active region 120 of the polymer optical stack 110 is positioned to receive a modulated signal from the high speed electrode 116 and the ground electrode 118. The active region 120 includes a polarized region containing at least one super-hypolarizable organic chromophore.

[0042] The polymer optical stack 110 is configured to support the active region 120 as well as to receive and direct light 122 to and from the active region. The polymer optical stack 110 can include at least one bottom cladding layer 124 and at least one top cladding layer 126 disposed below and above, respectively, an electro-optic layer 128. The bottom cladding layer 124 and the top cladding layer 126 are optionally configured in cooperation with the planarization layer 108 to direct the inserted light 122 along a plane of the electro-optic layer 128. Light directing structures 130 are formed in the polymer optical stack 110 to direct the light 122 along one or more light propagation paths through the electro-optic layer 128 and / or a non-active core structure (not shown). In Figure 2A and Figure 2B In an embodiment of the above, the directing structures 130 are formed as trench waveguides including etched paths in the at least one bottom cladding layer 124.

[0043] The integrated polymer electro-optical semiconductor circuit 101 includes a semiconductor circuit formed from a complex of the doped layer pattern 104 and at least one patterned conductor layer 106. According to embodiments, the semiconductor circuit is configured to be driven with a series of modulated electrical pulses to the electrodes 116, 118 when in operation. As a result, a resulting modulated electric field is applied across the active area 120 and causes modulated hyperpolarization of the embedded polarized organic chromophores therein. The complex of the electrodes 116, 118, the active area 120, and the light directing structure 130. The modulated hyperpolarization can thus modulate the rate of light passing through the polarized active area 120 of the polymer optical stack 110. Repeatedly modulating the rate of transmitted light produces a phase-modulated light signal emerging from the active area. Such active areas 120 can be combined with splitters, combiners (not shown), and other active areas to produce optical amplitude modulators, such as in the form of Mach-Zehnder optical modulators.

[0044] The combination of at least one electro-optical active area 120, at least two electrodes 116, 118, and corresponding light directing structures 124, 126, 130 can be considered an electro-optical device 132, 134. A dual-channel electro-optical device 134 can be formed from one ground electrode 118 and a corresponding pair of active areas 120 and high-speed electrodes 116a, 116b. The two channels of the dual-channel electro-optical device 134 can be cooperatively operated (such as in a push-pull manner) to form a Mach-Zehnder optical modulator.

[0045] An additional device can be formed using an electrode or resistor 136 that is not configured for high-speed operation. The operation of one such illustrated device is described below in connection with the description of the optical phase biasing device.

[0046] Wafer-level polarization is used to polarize one or more entire wafers in parallel with a plurality of slot modulator devices. Wafer-level polarization for each entire wafer can be performed at a high voltage. The high voltage can result in a corresponding high current in the wafer-level polarization. The high voltage current in the wafer-level polarization can be a current between about 10 nA and about 100 nA. For example, a single high voltage source can provide the high voltage current for the wafer-level polarization. The single high voltage source can also generate the single high voltage current. However, if a short occurs in one device during the wafer-level polarization, the high voltage current can increase dramatically to a very high level (e.g., 90 µA). In this situation, the high voltage current can damage other devices and the entire circuit.

[0047] Fuses can be used to protect equipment and the entire circuit. When a short occurs in a constant volume circuit, current can travel through the shorted equipment. At the same time, when one tank modulator equipment shorts, other tank modulator equipment can no longer have any current passing through it or can not have any voltage drop across it. Since Joule heating caused by current is proportional to the square of the current, the increased current traveling through the shorted equipment can cause high Joule heating on any fuses or equipment connected in series with the shorted equipment. If no fuses are available in the circuit, other equipment connected in parallel with the shorted equipment can stop working due to no voltage drop across the other equipment. However, if other fuses are available in the circuit, the fuse associated with the shorted equipment will break due to Joule heating, thereby disconnecting the shorted equipment from the system and maintaining the voltage drop across the other equipment. This can protect the circuit and other equipment in the circuit.

[0048] Various embodiments of wafer-level polarization that polarize each entire wafer include a system that polarizes multiple tank modulator devices substantially simultaneously from a single high voltage current. As shown in Figure 3 In an exemplary embodiment, system 10 can include a fuse array 30, a probe card 40, and a wafer 50 including multiple tank modulators 52. Tank modulators 52 can be fabricated on wafer 50. Fuse array 30 can include multiple individual fuses 32 connected in parallel, where each fuse 32 is adapted to be connected in series to high voltage source 20 and tank modulators 52.

[0049] As shown in Figure 3 , Figure 4 and Figure 5 Each fuse 32 has an input end 31 and an output end 33. Input end 31 can be connected to an input cable 24 that is connected to input leads 22 adapted to receive current from high voltage source 20. Output end 33 is connected to an output cable 34 that is connected in series to a probe set 44. Optionally, output cables 34 can be merged into a cable bundle 36, but output cables 34 remain as individual cables within cable bundle 36, i.e., output cables 34 operate in parallel with respect to each other.

[0050] Probe set 44 includes probe card 40 and multiple probes 42, where each probe 42 can be adapted to be connected in series to a tank modulator 52 on wafer 50.

[0051] Optionally, as Figure 4As shown, the system may further include a carrier printed circuit board (PCB) 60, a plurality of spring-loaded clips 62 connected to the output cable extension 34A, and one or more array alignment stops 64. In this embodiment, the fuse array 30 may be adapted to be reversibly attached to the carrier PCB 60, i.e., the fuse array 30 is arranged on a card 66 that can be inserted into and removed from the PCB 60. In a preferred embodiment, the output cable 34 for each fuse is oriented on the card 66 to align and connect with the spring-loaded clip 62 attached to the output cable extension 34A, which is then connected in series to the probe card 40 or the slot modulator 52. The array alignment stops 64 guide the placement of the fuse array cards 66 to orient the fuse array 30 on the carrier PCB 60. In a preferred embodiment, the spring-loaded clips are spring-loaded beryllium copper clips.

[0052] A single input lead 22 is adapted to receive current from a high-voltage source 20. A single high-voltage source 20 may include one or more input cables. Examples of known high-voltage sources include, but are not limited to, modular high-voltage power supplies, rack-mount and benchtop high-voltage power supplies, integrated, dedicated high-voltage power supplies, three-output high-voltage power supplies, four-output high-voltage power supplies, single-output high-voltage power supplies, single-output programmable bipolar high-voltage power supplies, single-output unipolar high-voltage power supplies, or source-measurement units (SMUs).

[0053] Embodiments may include a fuse array comprising multiple fuses 32 connected in parallel. In an exemplary embodiment, each fuse 32 is made of a material with good resistive characteristics and may be a single metal, alloy, aluminum, gold, copper, silver, platinum, palladium, tungsten, titanium, or a combination thereof. Each fuse 32 has a predetermined upper limit for polarization current. The upper limit for polarization current will generally be ten to twenty times the expected polarization current. Each fuse has a length, width, and thickness. The length, width, and thickness of the fuse will affect the resistance of the fuse and the upper limit for polarization current. The fuse material, shape, and size can be selected to determine the resistance / temperature at which the fuse will break.

[0054] In a preferred embodiment, such as Figure 5 As shown, when viewed from a top view, fuse 32 has a dog-bone shape. A dog-bone shape refers to a shape resembling a dog's bone, typically having two relatively large ends connected by a straight and relatively narrow middle section. An exemplary dog-bone shaped fuse would have a polarization current upper limit in the range of approximately 500 nA to approximately 1000 nA and an outer width w of approximately 100 µm. o The internal width w is between approximately 2µm and approximately 25µm. i The internal length l is between approximately 50µm and approximately 200µm. ia full length, / , of between about 250 pm and about 400 pm, and a thickness, t, of the dog bone fuse of about 1 pm. For another example, an exemplary dog bone shaped fuse can have a polarization current upper limit as low as about 150 nA. For another example, an exemplary dog bone shaped fuse can have a polarization current upper limit as high as in a range of about 5000 nA to about 100000 nA. Further, a maximum current of the system can for example have a range of about 5 pA to about 10 pA.

[0055] Various embodiments can also include a wafer 50 adapted to support a plurality of slot modulator devices 52. One or more (e.g., each) modulator device can be used to modulate a light beam across the entire wafer, although other applications are known in the art and the present invention can be used for any such application. For example, each slot modulator can include, but is not limited to, one of a polymer modulator or a laser modulator. Preferably, each slot modulator device 52 is connected in series to one fuse 32 in the fuse array 30 through the output cable 34, 34A of the fuse.

[0056] Because the fuses 32 are connected in parallel, when one slot modulator device 52 shorts out, the fuse 32 connected in series to the shorted slot modulator device 52 can break due to Joule heating. If the fuse connected in series to the shorted slot modulator device breaks, the remaining fuses can still function because they are still receiving current and still have a voltage drop. When the fuse connected in series to the shorted slot modulator breaks, the current to all other fuses in parallel can remain stable. The voltage drop can not be removed from any other slot modulator device connected in parallel. Thus, the present invention not only provides protection for parallel connected circuits and other devices, but also keeps the other devices working without stopping.

[0057] In some of the various embodiments mentioned above, the fuse array is attached to a carrier PCB. The carrier PCB improves efficiency related to switching in and out of the fuse array for each polarization run.

[0058] In some of the various embodiments mentioned above, the fuse array will include at least 10,000 fuses connected in parallel. The length and width of the fuse array can have a range of between about 5 cm and about 20 cm.

[0059] In some embodiments, each slot modulator device is a silicon organic hybrid (SOH) slot modulator. Polarizing an entire wafer under a single high voltage source using SOH slot modulators can be efficient in manufacturing.

[0060] In some embodiments, the output cable 34 from the fuse 32 can be directly connected in series to the pre-selected slot modulator 52, thereby eliminating the probe set 44. For example, in a first embodiment, as shown in FIG. 1, a system for polarizing a plurality of slot modulator devices 52 can include one fuse array 30 containing a plurality of fuses 32. Each fuse 32 in the fuse array 30 is connected in series to a pre-selected slot modulator device 52 on the wafer 50 without a plurality of probes in a probe set. In a second embodiment, as shown in FIG. 2, a system for polarizing a plurality of slot modulator devices 52 can include two or more fuse arrays 30. Each fuse array 30 can include a plurality of fuses 32 connected in parallel. The two or more fuse arrays 30 can be connected in parallel, in series, or a combination of both, to each other. Each fuse 32 in the fuse array 30 is connected in series to a pre-selected slot modulator device 52 on the wafer 50 without a plurality of probes in a probe set. Figure 6A Figure 6B

[0061] The present invention can provide a solution to overcome the problem of the entire slot modulator device wafer failing because of a single modulator device or fuse shorting on the wafer. The present invention can include a plurality of fuses connected in parallel, where each fuse is connected in series to one slot modulator device. If one slot modulator device shorts, the fuse connected in series to the shorted slot modulator device can break due to Joule heating, but the remaining slot modulator devices connected in parallel can still function because they are still receiving current and voltage drop. Additionally, when one fuse connected in series to a shorted slot modulator breaks, the current flowing to all other fuses connected in parallel can remain stable. Thus, the present invention not only provides protection for other devices and the entire circuit, but also keeps other devices working without stopping.

[0062] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the presently disclosed subject matter belongs. Representative methods, devices and materials are described herein but, unless otherwise indicated, are not intended to be limiting.

[0063] The terms "a," "an," and "the" mean "one or more" when used in the subject specification including the claims.

[0064] Unless otherwise indicated, all numbers expressing quantities of components, properties such as physical characteristics, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about." Accordingly, unless otherwise indicated, the numerical parameters set forth in the specification and claims are approximations. Thus, it should be understood that the numerical parameters set forth in the specification and claims are approximations. Variations can occur when the subject matter is practiced or is used in different environments.​​

[0065] As used herein, the term“about” when used in reference to a value or physical dimension or quantity, weight, time, volume, concentration, or percentage can encompass variations relative to the specified value, in some embodiments ±20%, in some embodiments ±10%, in some embodiments ±5%, in some embodiments ±1%, in some embodiments ±0.5%, and in some embodiments ±0.1%, as long as such variations are appropriate in the context of the application being disclosed.

[0066] It should be understood that various changes and modifications to the application described herein can be made by those skilled in the art upon reading the foregoing description having regard to the foregoing description. For example, the materials specified herein can be substituted with materials known in the art without departing from the scope of the application.

Claims

1. A method for manufacturing an integrated electro-optic phase modulator array, wherein the method comprises: A first substrate is provided, wherein the first substrate includes an interconnect array; An array of electro-optic phase modulators is arranged on the surface of the first substrate. Each modulator includes: Polymer optical stacking, Semiconductor substrate, Electrical input terminal, Optical input end, and Optical output end; and For each modulator, the interconnect array includes: Electrical interconnects, wherein the electrical interconnects are connected to corresponding electrical input terminals, An electrical bypass, wherein the electrical bypass connects at least one pair of adjacent modulators, and Optical interconnects, wherein the optical interconnects connect corresponding optical input terminals and optical output terminals; and Each modulator is connected in series with a corresponding fuse arranged along the electrical interconnect between the respective electrical input terminal and the voltage source.

2. The method of claim 1, wherein each modulator is a silicon-organic hybrid (SOH) trench modulator.

3. The method of claim 1, wherein the active region of the polymer optical stack comprises at least one hyperpolarizable organic chromophore.

4. The method of claim 3, wherein the at least one hyperpolarizable organic chromophore comprises general formula (I): D-Π-A(I) Where D represents an organic electron-donating group; A represents an organic electron-accepting group with a greater electron affinity than D; and Π represents a Π-bridge between A and D.

5. The method of claim 3, wherein the at least one hyperpolarizable organic chromophore is polarized to alignment.

6. The method of claim 1, wherein the method further comprises: A second substrate is provided, wherein the second substrate includes a carrier printed circuit board (PCB); A fuse array is deployed on the carrier PCB, wherein the fuse array includes a plurality of fuses arranged along the electrical interconnect, and wherein each fuse in the fuse array arranged along the electrical interconnect has an input terminal connected in series to a voltage input lead and an output terminal connected in series to an output cable, and wherein each fuse in the fuse array has a predetermined polarization current limit, which will cause each fuse to break if the limit is exceeded.

7. The method of claim 6, wherein the fuse array is connected in series with the voltage source.

8. The method of claim 7, wherein the voltage source is a constant voltage source having a high voltage.

9. The method of claim 6, wherein the fuse array comprises 10,000 or more fuses.

10. The method of claim 1, wherein the fuse arranged along the electrical interconnect has a top view in the shape of a dog bone and has a fusing current between approximately 500 nA and approximately 1000 nA.

11. The method of claim 1, wherein the fuse arranged along the electrical interconnect is made of aluminum or gold.

12. The method of claim 6, wherein the method further comprises: A probe set is provided, wherein the probe set comprises a plurality of probes connected in parallel; as well as Each probe is connected in series between each fuse arranged along the electrical interconnect and each corresponding electrical input terminal of each modulator.

13. The method of claim 1, further comprising: Polarize the wafer having the manufactured integrated electro-optic phase modulator array.

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