Filter

Abstract

A filter (10) according to the present disclosure is provided with a coupling capacitance electrode (17) which is formed in a layer different from a layer in which capacitor electrodes (18, 19C) are formed, is not connected to a resonator (11), and faces a first shield conductor (12A), a part of the coupling capacitance electrode being located between the first shield conductor and a first capacitor electrode, and a part of the coupling capacitance electrode being located between the first shield conductor and the second capacitor electrode. The other part of the coupling capacitor electrode is located between the first shield conductor and the second capacitor electrode.

Description

Technical Field

[0001] This disclosure relates to filters. Background Technology

[0002] A resonator having the following components has been proposed: a stripline line opposite to a shielding conductor formed on one main side of a dielectric substrate; and a via electrode, one end of which is connected to a shielding conductor formed on the other main side of the dielectric substrate, and the other end of which is connected to the stripline line (Japanese Patent Application Publication No. 2020-198482). Summary of the Invention

[0003] Techniques aimed at achieving better filter characteristics.

[0004] The purpose of this invention is to solve the above-mentioned problems.

[0005] A first aspect of the present invention is a filter comprising: a dielectric substrate having a first main surface and a second main surface located opposite to the first main surface; a first shielding electrode formed on the first main surface side of the dielectric substrate; a second shielding electrode formed on the second main surface side of the dielectric substrate; a plurality of resonators, each having a via electrode portion formed between the first shielding conductor and the second shielding conductor and a capacitor electrode connected to the via electrode portion; and a coupling capacitor electrode formed on a layer different from the layer on which the capacitor electrode is formed, and not connected to any of the plurality of resonators, and opposite to the first shielding conductor. The first resonator in the aforementioned resonator includes: a first via electrode portion among the plurality of aforementioned via electrode portions; and a first capacitor electrode connected to the end of the aforementioned first via electrode portion as the aforementioned capacitor electrode. The second resonator in the plurality of aforementioned resonators includes: a second via electrode portion among the plurality of aforementioned via electrode portions; and a second capacitor electrode connected to the end of the aforementioned second via electrode portion and formed in the same layer as the aforementioned first capacitor electrode as the aforementioned capacitor electrode. A portion of the aforementioned coupling capacitor electrode is located between the aforementioned first shielding conductor and the aforementioned first capacitor electrode, and another portion of the aforementioned coupling capacitor electrode is located between the aforementioned first shielding conductor and the aforementioned second capacitor electrode.

[0006] According to the present invention, a filter with a good Q-value (quality factor) can be provided. Attached Figure Description

[0007] Figure 1 This is a perspective view showing the filter according to the first embodiment.

[0008] Figure 2 This is a top view showing the filter according to the first embodiment.

[0009] Figure 3 This is a cross-sectional view showing a portion of the filter according to the first embodiment.

[0010] Figure 4 This is a perspective view showing the filter according to the first embodiment.

[0011] Figure 5 This is a perspective view showing the filter according to the first embodiment.

[0012] Figure 6 This is a top view showing the filter according to the first embodiment.

[0013] Figure 7 This is a perspective view showing the filter according to the first embodiment.

[0014] Figure 8 This is a top view showing the filter according to the first embodiment.

[0015] Figure 9 This is a perspective view showing the filter according to the first embodiment.

[0016] Figure 10 This is a top view showing the filter according to the first embodiment.

[0017] Figure 11 This is a perspective view showing the filter according to the first embodiment.

[0018] Figure 12 This is a top view showing the filter according to the first embodiment.

[0019] Figure 13 This is a perspective view showing the filter according to the first embodiment.

[0020] Figure 14 This is a top view showing the filter according to the first embodiment.

[0021] Figure 15 This is a perspective view showing the filter according to the first embodiment.

[0022] Figure 16 This is a top view showing the filter according to the first embodiment.

[0023] Figure 17 This is a perspective view showing the filter according to the second embodiment.

[0024] Figure 18 This is a top view showing the filter according to the second embodiment.

[0025] Figure 19This is a cross-sectional view showing a portion of the filter involved in the second embodiment.

[0026] Figure 20 This is a perspective view showing the filter according to the second embodiment.

[0027] Figure 21 This is a perspective view showing the filter according to the second embodiment.

[0028] Figure 22 This is a top view showing the filter according to the second embodiment.

[0029] Figure 23 This is a perspective view showing the filter according to the second embodiment.

[0030] Figure 24 This is a top view showing the filter according to the second embodiment.

[0031] Figure 25 This is a perspective view showing the filter according to the second embodiment.

[0032] Figure 26 This is a top view showing the filter according to the second embodiment.

[0033] Figure 27 This is a perspective view showing the filter according to the second embodiment.

[0034] Figure 28 This is a top view showing the filter according to the second embodiment.

[0035] Figure 29 This is a perspective view showing the filter according to the second embodiment.

[0036] Figure 30 This is a top view showing the filter according to the second embodiment. Detailed Implementation

[0037] (First Embodiment) Figure 1 This is a perspective view showing the filter 10 according to the first embodiment. Figure 2 This is a top view showing the filter 10 according to the first embodiment. Figure 3 This is a cross-sectional view showing a portion of the filter 10 according to the first embodiment. Figure 3 The middle shows Figure 2 Part of the section along line III-III. Figure 4 This is a perspective view showing the filter 10 according to the first embodiment. Figure 5 This is a perspective view showing the filter 10 according to the first embodiment. Figure 6This is a top view showing the filter 10 according to the first embodiment. Figure 7 This is a perspective view showing the filter 10 according to the first embodiment. Figure 8 This is a top view showing the filter 10 according to the first embodiment. Figure 9 This is a perspective view showing the filter 10 according to the first embodiment. Figure 10 This is a top view showing the filter 10 according to the first embodiment. Figure 11 This is a perspective view showing the filter 10 according to the first embodiment. Figure 12 This is a top view showing the filter 10 according to the first embodiment. Figure 13 This is a perspective view showing the filter 10 according to the first embodiment. Figure 14 This is a top view showing the filter 10 according to the first embodiment. Figure 15 This is a perspective view showing the filter 10 according to the first embodiment. Figure 16 This is a top view showing the filter 10 according to the first embodiment. For the sake of simplicity, Figures 1 to 16 In this context, some constituent elements are appropriately omitted.

[0038] The filter 10 includes a dielectric substrate 14. The dielectric substrate 14 is formed in a cuboid shape, but is not limited thereto. Although not shown in the figure, the dielectric substrate 14 has multiple stacked ceramic sheets. Thus, the dielectric substrate 14 has multiple layers formed by multiple ceramic sheets. The ceramic sheets are, for example, sheet-like dielectric ceramics.

[0039] The dielectric substrate 14 has a first main surface 14a, a second main surface 14b, and four side surfaces 14c to 14f. Each edge of the first main surface 14a and the second main surface 14b... Figure 1 The X and Y directions are shown. The direction from the first principal surface 14a to the second principal surface 14b is... Figure 1 The Z direction shown is consistent.

[0040] Furthermore, for convenience, in the following explanation, the direction opposite to the X direction is also referred to as the -X direction. For the same reason, the direction opposite to the Y direction is also referred to as the -Y direction. For the same reason, the direction opposite to the Z direction is also referred to as the -Z direction.

[0041] The four sides 14c to 14f are located between the first principal face 14a and the second principal face 14b. The direction from side 14c to side 14d is the same as the X direction. The direction from side 14e to side 14f is the same as the Y direction.

[0042] The dielectric substrate 14 includes a first shielding conductor 12A, a second shielding conductor 12B, a third shielding conductor 12C, a fourth shielding conductor 12D, a fifth shielding conductor 12E, and two input / output terminals 22 (22A, 22B). The third shielding conductor 12C will be described later. Furthermore, when describing each shielding conductor (12A to 12E) without distinguishing between them, the reference numeral 12 is used; when describing each shielding conductor separately, the reference numerals 12A to 12E are used.

[0043] The first shielding conductor 12A and the second shielding conductor 12B are located between the first main surface 14a and the second main surface 14b. The second shielding conductor 12B is located in the Z direction relative to the first shielding conductor 12A. Between the first shielding conductor 12A and the second shielding conductor 12B, a resonator 11, a coupling capacitor electrode 17, etc., described later, are disposed.

[0044] The first shielding conductor 12A and the second shielding conductor 12B are interconnected via a plurality of electrodes 12e to 12h. The plurality of electrodes 12e to 12h extend along the Z direction. Furthermore, the first shielding conductor 12A, the second shielding conductor 12B, and the plurality of electrodes 12e to 12h can be formed using the same conductor material.

[0045] The fourth shielding conductor 12D is formed on the side 14e along the X and Z directions. The fifth shielding conductor 12E is formed on the side 14f along the X and Z directions.

[0046] The fourth shielding conductor 12D and the fifth shielding conductor 12E are each connected to the first shielding conductor 12A and the second shielding conductor 12B.

[0047] A first input / output terminal 22A, one of two input / output terminals 22, is formed on side 14c. A second input / output terminal 22B, the other of the two input / output terminals 22, is formed on side 14d. The center of the first input / output terminal 22A is positioned in the Y direction relative to... Figure 2 The position of center C in the Y direction is consistent with that shown, but not limited to this. Similarly, the position of the center of the second input / output terminal 22B in the Y direction can be consistent with the position of center C in the Y direction, but is not limited to this. In addition, center C is the center of dielectric substrate 14 as viewed from above.

[0048] The dielectric substrate 14 includes a plurality of resonators 11 (11A to 11E). Each of the plurality of resonators 11 includes a structure 16. In other words, the dielectric substrate 14 includes a plurality of structures 16 (16A to 16E).

[0049] Each of the plurality of structures 16 has a via electrode portion 20 and a capacitor electrode 18. In other words, the dielectric substrate 14 has a plurality of via electrode portions 20 (A to E) and a plurality of capacitor electrodes 18 (A to E).

[0050] Via electrode portion 20B is located in the Y direction relative to via electrode portion 20A. Via electrode portion 20C is located in the X direction relative to via electrode portions 20A and 20B. Via electrode portions 20D and 20E are located in the X direction relative to via electrode portion 20C. Via electrode portion 20E is located in the Y direction relative to via electrode portion 20D.

[0051] Preferably, the center of the via electrode portion 20C coincides with the center C of the dielectric substrate 14 when viewed from above. Furthermore, it is preferable that the distance from the center CA of the via electrode portion 20A in the X direction to the center C in the X direction is equal to the distance from the center CE of the via electrode portion 20E in the X direction to the center C in the X direction. Moreover, it is preferable that the distance from the center CB of the via electrode portion 20B in the X direction to the center C in the X direction is equal to the distance from the center CD of the via electrode portion 20D in the X direction to the center C in the X direction.

[0052] The position of center C in the Y direction is between the position of center CA in the Y direction of via electrode 20A and the position of center CE in the Y direction of via electrode 20E (also refer to...). Figure 2 Preferably, the distance from the position of center CA in the Y direction to the position of center C in the Y direction is equal to the distance from the position of center CE in the Y direction to the position of center C in the Y direction.

[0053] If this is done, the center CA of the via electrode portion 20A is offset not only relative to the center (C) of the via electrode portion 20C in the X direction, but also relative to the center C in the Y direction. Therefore, the position of the via electrode portion 20A in the X direction is prevented from separating from the position of the via electrode portion 20C in the X direction, thus increasing the distance from the via electrode portion 20A to the via electrode portion 20C. Similarly, the center CE of the via electrode portion 20E is offset not only relative to the center C in the X direction, but also relative to the center C in the Y direction. Therefore, the position of the via electrode portion 20E in the X direction is prevented from separating from the position of the via electrode portion 20C in the X direction, thus increasing the distance from the via electrode portion 20E to the via electrode portion 20C. In this way, it is not necessary for the via electrode portions 20A and 20E to be significantly separated from the via electrode portion 20C in the X direction, thereby suppressing the size of the dielectric substrate 14 in the X direction.

[0054] The position of the center C of the via electrode 20C in the Y direction is between the position of the center CB of the via electrode 20B in the Y direction and the position of the center CD of the via electrode 20D in the Y direction (also refer to...). Figure 2 Preferably, the distance from the position of center CB in the Y direction to the position of center C in the Y direction is equal to the distance from the position of center CD in the Y direction to the position of center C in the Y direction.

[0055] If this is done, the center CB of the via electrode portion 20B is offset not only relative to the center (C) of the via electrode portion 20C in the X direction, but also relative to the center C in the Y direction. Therefore, the position of the via electrode portion 20B in the X direction is prevented from separating from the position of the via electrode portion 20C in the X direction, thus increasing the distance from the via electrode portion 20B to the via electrode portion 20C. Similarly, the center CD of the via electrode portion 20D is offset not only relative to the center C in the X direction, but also relative to the center C in the Y direction. Therefore, the position of the via electrode portion 20D in the X direction is prevented from separating from the position of the via electrode portion 20C in the X direction, thus increasing the distance from the via electrode portion 20D to the via electrode portion 20C. In this way, it is not necessary for the via electrode portions 20B and 20D to be significantly separated from the via electrode portion 20C in the X direction, thereby suppressing the size of the dielectric substrate 14 in the X direction.

[0056] The position of the center CA of the via electrode 20A in the Y direction is, for example, equal to the position of the center CD of the via electrode 20D in the Y direction, but is not limited thereto. Similarly, the position of the center CB of the via electrode 20B in the Y direction is, for example, equal to the position of the center CE of the via electrode 20E in the Y direction, but is not limited thereto.

[0057] Furthermore, the distance from the position of the center CA in the X direction to the position of the first input / output terminal 22A in the X direction is smaller than the distance from the position of the center CB in the X direction to the position of the first input / output terminal 22A in the X direction, but is not limited thereto. The distance from the position of the center CA in the Y direction to the position of the first input / output terminal 22A in the Y direction is, for example, equal to the distance from the position of the center CB in the Y direction to the position of the first input / output terminal 22A in the Y direction, but is not limited thereto.

[0058] Furthermore, the distance from the position of the center CD in the X direction to the position of the second input / output terminal 22B in the X direction is greater than the distance from the position of the center CE in the X direction to the position of the second input / output terminal 22B in the X direction, but is not limited thereto. The distance from the position of the center CD in the Y direction to the position of the second input / output terminal 22B in the Y direction is, for example, equal to the distance from the position of the center CE in the Y direction to the position of the second input / output terminal 22B in the Y direction, but is not limited thereto.

[0059] Each of the plurality of via electrode portions 20 is composed of a plurality of via electrodes 24. Each of the plurality of via electrodes 24 is embedded in a via formed in the dielectric substrate 14. Although not shown in the figure, the via is formed along the Z direction.

[0060] Multiple via electrodes 24 constituting the same via electrode section 20 are arranged along an imaginary circle 26 when viewed from above (see also reference). Figure 2 Therefore, each of the plurality of via electrode portions 20 can operate as a single electrode formed in a cylindrical shape. Each of the plurality of via electrodes 24 has a relatively small diameter. Therefore, compared with the case of forming cylindrical via electrodes with the same diameter as the imaginary circle 26, the amount of material embedded in the aforementioned via holes can be suppressed. In addition, the manufacturing process of the filter 10 can be simplified.

[0061] Each of the aforementioned via electrodes 24 has one end (upper end) in the Z direction and another end (lower end) in the -Z direction. The upper end can be connected to the second shielding conductor 12B. The lower end is connected to the aforementioned capacitor electrode 18.

[0062] The capacitor electrode 18 is a strip-shaped line formed within the dielectric substrate 14. As described above, a plurality of capacitor electrodes 18 (18A to 18E) are provided within the dielectric substrate 14. The plurality of capacitor electrodes 18 are formed on the same layer. In other words, the plurality of capacitor electrodes 18 are formed on the same ceramic sheet. There is one or more ceramic sheets between the capacitor electrode 18 and the first shielding conductor 12A. In addition, there is also one or more ceramic sheets between the capacitor electrode 18 and the second shielding conductor 12B.

[0063] Furthermore, electrode patterns 18f and 18g are also formed on the layer where capacitor electrodes 18 are formed. Electrode pattern 18g is located in the Y direction relative to electrode pattern 18f. Electrode pattern 18f is connected to the fourth shielding conductor 12D. Electrode pattern 18f is connected to the fifth shielding conductor 12E. A plurality of capacitor electrodes 18 are located between electrode pattern 18f and electrode pattern 18g.

[0064] Multiple capacitor electrodes 18 are connected to the lower ends of mutually different via electrode portions 20. Capacitor electrode 18A is connected to the lower end of via electrode portion 20A. Capacitor electrode 18B is connected to the lower end of via electrode portion 20B. Capacitor electrode 18C is connected to the lower end of via electrode portion 20C. Capacitor electrode 18D is connected to the lower end of via electrode portion 20D. Capacitor electrode 18E is connected to the lower end of via electrode portion 20E.

[0065] Preferably, the plurality of capacitor electrodes 18 are formed in a point-symmetrical manner with respect to center C. More specifically, capacitor electrodes 18A and 18E are preferably formed in a point-symmetrical manner with respect to center C. Additionally, capacitor electrodes 18B and 18D are preferably formed in a point-symmetrical manner with respect to center C. Furthermore, the center of capacitor electrode 18C coincides with center C. The shape of capacitor electrode 18C is preferably point-symmetrical with respect to center C. By forming the plurality of capacitor electrodes 18 in a point-symmetrical manner, good frequency determination can be obtained. As described above, center C is the center of the dielectric substrate 14 as viewed from above.

[0066] like Figure 5 , Figure 6 As shown, the dielectric substrate 14 also has a plurality of coupling capacitor electrodes 17 (17AB, 17AC, 17BC, 17DC, 17EC, 17ED).

[0067] Each of the plurality of coupling capacitor electrodes 17 is an electrode (planar electrode) formed within the dielectric substrate 14. The plurality of coupling capacitor electrodes 17 are formed on the same layer. In other words, the plurality of coupling capacitor electrodes 17 are formed on the same ceramic sheet.

[0068] Multiple coupling capacitor electrodes 17 are formed in a different layer than the layer in which capacitor electrodes 18 are formed. More specifically, the layer in which the multiple coupling capacitor electrodes 17 are formed is located between the layer in which the first shielding conductor 12A is formed and the layer in which the multiple capacitor electrodes 18 are formed (see also...). Figure 3 Between the coupling capacitor electrode 17 and the capacitor electrode 18, there is one or more ceramic plates. The multiple coupling capacitor electrodes 17 are not connected to any of the multiple resonators 11, but are opposite to the first shielding conductor 12A.

[0069] The coupling capacitor electrode 17AB includes partial patterns 17AB1 and 17AB2. Partial patterns 17AB1 and 17AB2 are interconnected. At least a portion of partial pattern 17AB1 overlaps with at least a portion of capacitor electrode 18A when viewed from above. At least a portion of partial pattern 17AB2 overlaps with at least a portion of capacitor electrode 18B when viewed from above.

[0070] Capacitor electrode 18A is capacitively coupled to coupling capacitor electrode 17AB, and capacitor electrode 18B is capacitively coupled to coupling capacitor electrode 17AB. Thus, capacitive coupling structure 21 (21AB) is formed.

[0071] like Figure 6 As shown, the coupling capacitor electrode 17AC includes partial patterns 17AC1 and 17AC2. Partial patterns 17AC1 and 17AC2 are interconnected. At least a portion of partial pattern 17AC1 overlaps with at least a portion of capacitor electrode 18A when viewed from above. At least a portion of partial pattern 17AC2 overlaps with at least a portion of capacitor electrode 18C when viewed from above.

[0072] Capacitor electrode 18A is capacitively coupled to coupling capacitor electrode 17AC, and capacitor electrode 18C is capacitively coupled to coupling capacitor electrode 17AC. Thus, capacitive coupling structure 21 (21AC) is formed.

[0073] like Figure 6 As shown, the coupling capacitor electrode 17BC includes partial patterns 17BC1 and 17BC2. Partial patterns 17BC1 and 17BC2 are interconnected. At least a portion of partial pattern 17BC1 overlaps with at least a portion of capacitor electrode 18B when viewed from above. At least a portion of partial pattern 17BC2 overlaps with at least a portion of capacitor electrode 18C when viewed from above.

[0074] Capacitor electrode 18B is capacitively coupled to coupling capacitor electrode 17BC, and capacitor electrode 18C is capacitively coupled to coupling capacitor electrode 17BC. Thus, capacitive coupling structure 21 (21BC) is formed.

[0075] like Figure 6 As shown, the coupling capacitor electrode 17DC includes partial patterns 17DC1 and 17DC2. Partial patterns 17DC1 and 17DC2 are interconnected. At least a portion of partial pattern 17DC1 overlaps with at least a portion of capacitor electrode 18D in a top view. At least a portion of partial pattern 17DC2 overlaps with at least a portion of capacitor electrode 18C in a top view.

[0076] Capacitor electrode 18D is capacitively coupled to coupling capacitor electrode 17DC, and capacitor electrode 18C is capacitively coupled to coupling capacitor electrode 17DC. Thus, capacitive coupling structure 21 (21DC) is formed.

[0077] like Figure 6As shown, the coupling capacitor electrode 17EC includes partial patterns 17EC1 and 17EC2. Partial patterns 17EC1 and 17EC2 are interconnected. At least a portion of partial pattern 17EC1 overlaps with at least a portion of capacitor electrode 18E when viewed from above. At least a portion of partial pattern 17EC2 overlaps with at least a portion of capacitor electrode 18C when viewed from above.

[0078] Capacitor electrode 18E is capacitively coupled to coupling capacitor electrode 17EC, and capacitor electrode 18C is capacitively coupled to coupling capacitor electrode 17EC. Thus, capacitive coupling structure 21 (21EC) is formed.

[0079] like Figure 6 As shown, the coupling capacitor electrode 17ED includes partial patterns 17ED1 and 17ED2. Partial patterns 17ED1 and 17ED2 are interconnected. At least a portion of partial pattern 17ED1 overlaps with at least a portion of capacitor electrode 18E when viewed from above. At least a portion of partial pattern 17ED2 overlaps with at least a portion of capacitor electrode 18D when viewed from above.

[0080] Capacitor electrode 18E is capacitively coupled to coupling capacitor electrode 17ED, and capacitor electrode 18D is capacitively coupled to coupling capacitor electrode 17ED. Thus, capacitive coupling structure 21 (21ED) is formed.

[0081] Thus, according to this embodiment, the coupling capacitor electrode 17 is located between the layer where the capacitor electrode 18 is formed and the layer where the first shielding conductor 12A is formed. Therefore, according to this embodiment, the distance in the Z direction between the coupling capacitor electrode 17 and the capacitor electrode 18 can be set sufficiently small. Therefore, according to this embodiment, a good Q value can be obtained.

[0082] Furthermore, the plurality of coupling capacitor electrodes 17 are preferably formed in a point-symmetrical manner with the center C as the center of symmetry. More specifically, coupling capacitor electrodes 17AB and 17ED are preferably formed in a point-symmetrical manner with the center C as the center of symmetry. Additionally, coupling capacitor electrodes 17AC and 17EC are preferably formed in a point-symmetrical manner with the center C as the center of symmetry. Furthermore, coupling capacitor electrodes 17BC and 17DC are preferably formed in a point-symmetrical manner with the center C as the center of symmetry. By forming these coupling capacitor electrodes 17 in a point-symmetrical manner, better frequency determination can be obtained. As described above, the center C is the center of the dielectric substrate 14 as viewed from above.

[0083] As described above, a third shielding conductor 12C is provided on the dielectric substrate 14. The layer on which the third shielding conductor 12C is formed is located in the Z direction relative to the layer on which the capacitor electrode 18 is formed (see also...). Figure 7 , Figure 8 In other words, the layer with capacitor electrode 18 is located between the layer with third shielding conductor 12C and the layer with coupling capacitor electrode 17. The third shielding conductor 12C is not connected to any of the via electrode portions 20.

[0084] The third shielding conductor 12C is electrically connected to the first shielding conductor 12A via the fourth shielding conductor 12D and the fifth shielding conductor 12E. The potential of the third shielding conductor 12C is equal to the potential of the first shielding conductor 12A.

[0085] like Figure 8 As shown, at least a portion (overlapping portion 23) of the plurality of capacitor electrodes 18 is opposite to the third shielding conductor 12C. More specifically, at least a portion of capacitor electrode 18A is opposite to the third shielding conductor 12C. At least a portion of capacitor electrode 18B is opposite to the third shielding conductor 12C. At least a portion of capacitor electrode 18D is opposite to the third shielding conductor 12C. At least a portion of capacitor electrode 18E is opposite to the third shielding conductor 12C. Capacitor electrode 18C is not opposite to the third shielding conductor 12C, but may be opposite to it.

[0086] In this embodiment, the coupling capacitor electrode 17 is located between the capacitor electrode 18 and the first shielding conductor 12A. Therefore, the area of ​​the portions of the capacitor electrode 18 and the first shielding conductor 12A that are not separated by the coupling capacitor electrode 17 and face each other is smaller. However, in this embodiment, a third shielding conductor 12C is provided, which overlaps with a portion of the capacitor electrode 18 when viewed from above. The third shielding conductor 12C is electrically connected to the first shielding conductor 12A via a fourth shielding conductor 12D and a fifth shielding conductor 12E. Therefore, according to this embodiment, the electrostatic capacitance between the capacitor electrode 18 and the shielding conductor 12 can be sufficiently ensured.

[0087] like Figure 9 , Figure 10 As shown, the dielectric substrate 14 also has a plurality of coupling capacitor patterns 72 (72A to 72E).

[0088] Each of the plurality of coupling capacitor patterns 72 is a conductor pattern. The plurality of coupling capacitor patterns 72 are formed on the same layer. In other words, the plurality of coupling capacitor patterns 72 are formed on the same ceramic sheet. The layer on which the plurality of coupling capacitor patterns 72 are formed is located in the Z direction relative to the layer on which the third shielding conductor 12C is formed (see also...). Figure 3 There is one or more ceramic sheets between the coupling capacitor pattern 72 and the third shielding conductor 12C.

[0089] Multiple coupling capacitor patterns 72 are connected to different via electrode portions 20. Coupling capacitor pattern 72A is connected to via electrode portion 20A. Coupling capacitor pattern 72B is connected to via electrode portion 20B. Coupling capacitor pattern 72C is connected to via electrode portion 20C. Coupling capacitor pattern 72D is connected to via electrode portion 20D. Coupling capacitor pattern 72E is connected to via electrode portion 20E.

[0090] Adjacent coupling capacitor patterns 72 are capacitively coupled. Adjacent coupling capacitor patterns 72 form a capacitive coupling structure 71. In other words, multiple coupling capacitor patterns 72 form multiple capacitive coupling structures 71 (71AB, 71AC, 71BC, 71DC, 71EC, 71ED). More specifically, coupling capacitor patterns 72A and 72B form capacitive coupling structure 71AB. Coupling capacitor patterns 72A and 72C form capacitive coupling structure 71AC. Coupling capacitor patterns 72B and 72C form capacitive coupling structure 71BC. Coupling capacitor patterns 72D and 72C form capacitive coupling structure 71DC. Coupling capacitor patterns 72E and 72C form capacitive coupling structure 71EC. Coupling capacitor patterns 72E and 72D form capacitive coupling structure 71ED.

[0091] These coupling capacitor patterns 72 are preferably formed point-symmetrically with respect to center C. More specifically, coupling capacitor patterns 72A and 72E are preferably formed point-symmetrically with respect to center C. Additionally, coupling capacitor patterns 72B and 72D are preferably formed point-symmetrically with respect to center C. Furthermore, the center of coupling capacitor pattern 72C coincides with center C. The shape of coupling capacitor pattern 72C is preferably point-symmetrical with respect to center C. By arranging multiple coupling capacitor patterns 72 point-symmetrically, good frequency determination can be obtained. As described above, center C is the center of the dielectric substrate 14 as viewed from above.

[0092] Additionally, in the following description, the distance in the Z direction between the coupling capacitor pattern 72 and the capacitor electrode 18 is also referred to as the first distance D1 (see also [reference]). Figure 3 The distance in the Z direction between the first shielding conductor 12A and the capacitor electrode 18 is also referred to as the second distance D2. Preferably, the first distance D1 is less than or equal to the second distance D2. More preferably, the first distance D1 is less than or equal to the second distance D2. By setting the distance between the coupling capacitor pattern 72 and the capacitor electrode 18 to be relatively small, a good Q value can be obtained.

[0093] like Figure 11 , Figure 12 As shown, the dielectric substrate 14 also has multiple coupling capacitor patterns 74 (74A, 74B, 74D, 74E).

[0094] Each of the plurality of coupling capacitor patterns 74 is a conductor pattern. The plurality of coupling capacitor patterns 74 are formed on the same layer. In other words, the plurality of coupling capacitor patterns 74 are formed on the same ceramic sheet. The layer on which the coupling capacitor patterns 74 are formed is located in the Z direction relative to the layer on which the coupling capacitor patterns 72 are formed (see also...). Figure 3 Between coupling capacitor pattern 74 and coupling capacitor pattern 72, there is one or more ceramic sheets.

[0095] Coupling capacitor patterns 74B and 74D are not connected to any of the via electrode portions 20. In contrast, coupling capacitor pattern 74A is connected to via electrode portion 20A. Additionally, coupling capacitor pattern 74E is connected to via electrode portion 20E.

[0096] Adjacent coupling capacitor patterns 74 are capacitively coupled to form a capacitive coupling structure 73. In other words, multiple coupling capacitor patterns 74 form multiple capacitive coupling structures 73 (73AB, 73BE, 73DA, 73ED). More specifically, coupling capacitor pattern 74A and coupling capacitor pattern 74B form capacitive coupling structure 73AB. Coupling capacitor pattern 74B and coupling capacitor pattern 74E form capacitive coupling structure 73BE. Coupling capacitor pattern 74D and coupling capacitor pattern 74A form capacitive coupling structure 73DA. Coupling capacitor pattern 74E and coupling capacitor pattern 74D form capacitive coupling structure 73ED.

[0097] Furthermore, preferably, the plurality of coupling capacitor patterns 74 are formed symmetrically with respect to center C. More specifically, coupling capacitor patterns 74A and 74E are preferably formed symmetrically with respect to center C. Additionally, coupling capacitor patterns 74B and 74D are preferably formed symmetrically with respect to center C. By symmetrically arranging the plurality of coupling capacitor patterns 74, good frequency determination can be obtained. As described above, center C is the center of the dielectric substrate 14 as viewed from above.

[0098] like Figure 13 , Figure 14 As shown, the dielectric substrate 14 also has two input / output patterns 80 (80A, 80B).

[0099] Each of the two input / output patterns 80 is a conductor pattern. The two input / output patterns 80 are formed on the same layer. In other words, the two input / output patterns 80 are formed on the same ceramic sheet.

[0100] Input / output pattern 80A connects the first input / output terminal 22A to the via electrode 20A. Conversely, input / output pattern 80B connects the second input / output terminal 22B to the via electrode 20E.

[0101] The layer with two input / output patterns 80 is located in the Z direction relative to the layer with the coupling capacitor pattern 74. Between the input / output patterns 80 and the coupling capacitor pattern 74, there is one or more ceramic sheets. By appropriately setting the position of the two input / output patterns 80 in the Z direction, the external Q can be appropriately adjusted.

[0102] like Figure 15 , Figure 16 As shown, the dielectric substrate 14 also has a coupling capacitor pattern 76.

[0103] The coupling capacitor pattern 76 is a conductive pattern formed within the dielectric substrate 14. The layer on which the coupling capacitor pattern 76 is formed is located in the Z direction relative to the layer on which the two input / output patterns 80 are formed. The coupling capacitor pattern 76 is connected to the via electrode portion 20B and the via electrode portion 20D.

[0104] Preferably, the coupling capacitor pattern 76 is formed symmetrically with respect to center C. By forming the coupling capacitor pattern 76 symmetrically with respect to center C, good frequency determination can be obtained. As described above, center C is the center of the dielectric substrate 14 when viewed from above.

[0105] (Second Implementation) In the second embodiment, descriptions that are repeated in the first embodiment are appropriately omitted. Furthermore, components identical to those described in the first embodiment are labeled with the same symbols.

[0106] Figure 17 This is a perspective view showing the filter 10 according to the second embodiment. Figure 18 This is a top view showing the filter 10 according to the second embodiment. Figure 19 This is a cross-sectional view showing a portion of the filter 10 according to the second embodiment. Figure 19 The middle shows Figure 18 Part of the XIX-XIX line profile. Figure 20 This is a perspective view showing the filter 10 according to the second embodiment. Figure 21 This is a perspective view showing the filter 10 according to the second embodiment. Figure 22 This is a top view showing the filter 10 according to the second embodiment. Figure 23 This is a perspective view showing the filter 10 according to the second embodiment. Figure 24 This is a top view showing the filter 10 according to the second embodiment. Figure 25This is a perspective view showing the filter 10 according to the second embodiment. Figure 26 This is a top view showing the filter 10 according to the second embodiment. Figure 27 This is a perspective view showing the filter 10 according to the second embodiment. Figure 28 This is a top view showing the filter 10 according to the second embodiment. Figure 29 This is a perspective view showing the filter 10 according to the second embodiment. Figure 30 This is a top view showing the filter 10 according to the second embodiment. For the sake of simplicity, in Figures 17 to 30 In this context, some constituent elements are appropriately omitted.

[0107] like Figures 17 to 21 As shown, the filter 10 includes a dielectric substrate 14. The dielectric substrate 14 includes a first shielding conductor 12A, a second shielding conductor 12B, a fourth shielding conductor 12D, a fifth shielding conductor 12E, a first input / output terminal 22A, and a second input / output terminal 22B. Additionally, the dielectric substrate 14 includes multiple electrodes 12e to 12f, multiple resonators 11 (11A to 11E), multiple coupling capacitor electrodes 17 (17AB, 17ED), and multiple coupling capacitor patterns 72 (72A, 72B, 72D, 72E).

[0108] Although omitted in this embodiment, the dielectric substrate 14 may also include a third shielding conductor 12C (see the first embodiment).

[0109] Each of the plurality of resonators 11 has a via electrode portion 20 and a capacitor electrode 18. In other words, the dielectric substrate 14 has a plurality of via electrode portions 20 (20A, 20B, 20C2, 20D, 20E), a plurality of capacitor electrodes 18 (18A, 18B, 18D, 18E), and a capacitor electrode 19C.

[0110] Multiple capacitor electrodes 18 are formed on the same layer (ceramic sheet). A layer with multiple coupling capacitor electrodes 17 is located between the layer with the capacitor electrodes 18 and the layer with the first shielding conductor 12A. Furthermore, electrode patterns 18f and 18g are formed on the layer with the capacitor electrodes 18. Electrode pattern 18f is connected to the fourth shielding conductor 12D. Electrode pattern 18g is connected to the fifth shielding conductor 12E.

[0111] like Figure 22As shown, the coupling capacitor electrode 17AB includes partial patterns 17AB1 and 17AB2. Partial patterns 17AB1 and 17AB2 are interconnected. At least a portion of partial pattern 17AB1 overlaps with at least a portion of capacitor electrode 18A when viewed from above. At least a portion of partial pattern 17AB2 overlaps with at least a portion of capacitor electrode 18B when viewed from above.

[0112] The coupling capacitor electrode 17ED includes partial patterns 17ED1 and 17ED2. Partial patterns 17ED1 and 17ED2 are interconnected. At least a portion of partial pattern 17ED1 overlaps with at least a portion of capacitor electrode 18E when viewed from above. At least a portion of partial pattern 17ED2 overlaps with at least a portion of capacitor electrode 18D when viewed from above.

[0113] The capacitor electrode 19C is formed in a different layer than the layer in which the capacitor electrode 18 is formed. More specifically, the layer in which the capacitor electrode 19C is formed is located in the Z direction relative to the layer in which the capacitor electrode 18 is formed (see also...). Figure 19 , Figure 23 ).

[0114] like Figure 23 , Figure 24 As shown, capacitor electrode 19C is formed, for example, on the same layer as the plurality of coupling capacitor patterns 72. Capacitor electrode 19C is capacitively coupled to the plurality of coupling capacitor patterns 72.

[0115] Capacitor electrode 19C is connected to via electrode section 20C2. Furthermore, a plurality of coupling capacitor patterns 60, described later, are connected to the lower end of via electrode section 20C2. A more detailed description of via electrode section 20C2 will follow.

[0116] Preferably, the capacitor electrode 19C is formed symmetrically with respect to center C. Center C is the center of the dielectric substrate 14 when viewed from above. By forming the capacitor electrode 19C symmetrically with respect to center C, good frequency determination can be obtained.

[0117] Each of the plurality of coupling capacitor patterns 60 (60AD, 60EB) is a conductor pattern formed within the dielectric substrate 14. The layer in which the plurality of coupling capacitor patterns 60 are formed is located between the layer in which capacitor electrodes 18 are formed and the layer in which capacitor electrodes 19C are formed (see also...). Figure 19 Furthermore, the coupling capacitor pattern 60EB is located in the Y direction relative to the coupling capacitor pattern 60AD (see also...). Figure 21 , Figure 22 ).

[0118] The coupling capacitor pattern 60AD, which is one of a plurality of coupling capacitor patterns 60, includes partial pattern 60AD1 and partial pattern 60AD2. Partial pattern 60AD1 and partial pattern 60AD2 are interconnected.

[0119] At least a portion of the partial pattern 60AD1 is opposite to at least a portion of the capacitor electrode 18A. Thus, the capacitor electrode 18A is capacitively coupled to the coupling capacitor pattern 60AD. Additionally, at least a portion of the partial pattern 60AD2 is opposite to at least a portion of the capacitor electrode 18D. Thus, the capacitor electrode 18D is capacitively coupled to the coupling capacitor pattern 60AD.

[0120] The coupling capacitor pattern 60EB, which is one of a plurality of coupling capacitor patterns 60, includes partial pattern 60EB1 and partial pattern 60EB2. Partial pattern 60EB1 and partial pattern 60EB2 are interconnected.

[0121] At least a portion of pattern 60EB1 is opposite to at least a portion of capacitor electrode 18E. Thus, capacitor electrode 18E is capacitively coupled to coupling capacitor pattern 60EB. Additionally, at least a portion of pattern 60EB2 is opposite to at least a portion of capacitor electrode 18B. Thus, capacitor electrode 18B is capacitively coupled to coupling capacitor pattern 60EB.

[0122] Furthermore, preferably, the plurality of coupling capacitor patterns 60 are formed point-symmetrically with the center C as the center of symmetry. More specifically, the coupling capacitor patterns 60AD and 60EB are preferably formed point-symmetrically with the center C as the center of symmetry. By forming the plurality of coupling capacitor patterns 60 point-symmetrically, good frequency determination can be obtained. In addition, as described above, the center C is the center of the dielectric substrate 14 when viewed from above.

[0123] The via electrode portion 20C2 is formed in a through hole (not shown) formed along the Z direction. The via electrode portion 20C2 has a first electrode portion 20Ca and a second electrode portion 20Cb.

[0124] The second electrode portion 20Cb is located in the Y direction relative to the first electrode portion 20Ca. As a result, the distance from the first electrode portion 20Ca to the fourth shielding conductor 12D is shortened, and the distance from the second electrode portion 20Cb to the fifth shielding conductor 12E is also shortened. Consequently, the coupling capacitance between the first electrode portion 20Ca and the fourth shielding conductor 12D, and the coupling capacitance between the second electrode portion 20Cb and the fifth shielding conductor 12E, can be increased.

[0125] The lower end (in the Z direction) of the first electrode section 20Ca is connected to the aforementioned coupling capacitor pattern 60AD (see also...). Figure 21 , Figure 22 The lower end of the second electrode portion 20Cb in the Z-direction is connected to the aforementioned coupling capacitor pattern 60EB. Furthermore, the upper end of the first electrode portion 20Ca and the upper end of the second electrode portion 20Cb in the Z-direction can be connected to the second shielding conductor 12B (see also...). Figure 19 ).

[0126] Each of the first electrode section 20Ca and the second electrode section 20Cb is composed of multiple via electrodes 24. For example... Figure 24 As shown, the plurality of via electrodes 24 constituting the first part electrode portion 20Ca are arranged along an imaginary arc 27a. Conversely, the plurality of via electrodes 24 constituting the second part electrode portion 20Cb are arranged along an imaginary arc 27b. The curvature of the imaginary arc 27a and the curvature of the imaginary arc 27b are, for example, equal to the curvature of the imaginary circle 26 described in the first embodiment, but are not limited thereto. The first part electrode portion 20Ca and the second part electrode portion 20Cb are formed symmetrically with the center C of the dielectric substrate 14 as the center of symmetry when viewed from above, but are not limited thereto. The via electrode portion 20C2 may also be formed by a plurality of via electrodes 24 arranged along the imaginary circle 26, similar to other via electrode portions 20A, via electrode portions 20B, etc.

[0127] like Figures 25 to 30 As shown, the dielectric substrate 14 also includes multiple coupling capacitor patterns 74 (74A, 74B, 74D, 74E), two input / output patterns 80 (80A, 80B), and a coupling capacitor pattern 76. The layer with the coupling capacitor pattern 74 is located in the Z direction relative to the layer with the coupling capacitor pattern 60 (see also...). Figure 19 The layer with the input / output pattern 80 is located in the Z direction relative to the layer with the coupling capacitor pattern 74. The layer with the coupling capacitor pattern 76 is located in the Z direction relative to the layer with the input / output pattern 80.

[0128] According to this embodiment, similarly to the first embodiment, the coupling capacitor electrode 17 is located between the layer where the capacitor electrode 18 is formed and the layer where the first shielding conductor 12A is formed. Therefore, according to this embodiment, the distance in the Z direction between the coupling capacitor electrode 17 and the capacitor electrode 18 can be set sufficiently small. Therefore, according to this embodiment, a good Q value can be obtained.

[0129] Furthermore, by keeping the distance between the layer with the coupling capacitor pattern 72 and the layer with the capacitor electrode 18 short, a good Q value can be obtained. In this respect, according to this embodiment, the layer with the coupling capacitor electrode 17 is located between the layer with the capacitor electrode 18 and the layer with the first shielding conductor 12A. Therefore, the coupling capacitor electrode 17 does not prevent the distance between the layer with the coupling capacitor pattern 72 and the layer with the capacitor electrode 18A from being kept short.

[0130] Furthermore, by setting the distance between the layer where the capacitor electrode 19C is formed and the layer where the capacitor electrode 18 is formed to be short, a good Q value can be obtained. In this regard, according to this embodiment, the capacitor electrode 19C is also formed in the layer where the coupling capacitor pattern 72 is formed. As described above, the coupling capacitor electrode 17 does not prevent the distance between the layer where the coupling capacitor pattern 72 is formed and the layer where the capacitor electrode 18 is formed from being short. Therefore, according to this embodiment, a better Q value can be obtained.

[0131] The following notes are also disclosed regarding the above-described embodiments.

[0132] (Note 1) The filter (10) disclosed herein comprises: a dielectric substrate (14) having a first main surface (14a) and a second main surface (14b) located opposite to the first main surface; a first shielding conductor (12A) formed on the first main surface side of the dielectric substrate; a second shielding conductor (12B) formed on the second main surface side of the dielectric substrate; a plurality of resonators (11), each having a via electrode portion (20) formed between the first shielding conductor and the second shielding conductor and a capacitor electrode (18, 19C) connected to the via electrode portion; and a coupling capacitor electrode (17) formed on a layer different from the layer on which the capacitor electrode is formed, and not connected to any of the plurality of resonators, and opposite to the first shielding conductor, and the plurality of front The first resonator (11A) of the resonators includes: a first via electrode portion (20A) among the plurality of aforementioned via electrode portions; and a first capacitor electrode (18A) connected to the end of the aforementioned first via electrode portion as the aforementioned capacitor electrode. The second resonator (11B) of the plurality of aforementioned resonators includes: a second via electrode portion (20B) among the plurality of aforementioned via electrode portions; and a second capacitor electrode (18B) connected to the end of the aforementioned second via electrode portion and formed in the same layer as the aforementioned first capacitor electrode as the aforementioned capacitor electrode. A portion (17AB1) of the aforementioned coupling capacitor electrode is located between the aforementioned first shielding conductor and the aforementioned first capacitor electrode, and another portion (17AB2) of the aforementioned coupling capacitor electrode is located between the aforementioned first shielding conductor and the aforementioned second capacitor electrode. As a result, a good Q value can be obtained.

[0133] (Note 2) Alternatively, in the filter described in Appendix 1, the third resonator (11C) among the plurality of aforementioned resonators may include: a third via electrode portion (20C) among the plurality of aforementioned via electrode portions; and a third capacitor electrode (18C) connected to the end of the aforementioned third via electrode portion as the aforementioned capacitor electrode. A portion of the first coupling capacitor electrode (17) among the plurality of aforementioned coupling capacitor electrodes is located between the aforementioned first shielding conductor and the aforementioned first capacitor electrode, and another portion of the aforementioned first coupling capacitor electrode is located between the aforementioned first shielding conductor and the aforementioned second capacitor electrode. A portion (17BC1) of the second coupling capacitor electrode (17) among the plurality of aforementioned coupling capacitor electrodes is located between the aforementioned first shielding conductor and the aforementioned second capacitor electrode, and another portion (17BC2) of the aforementioned second coupling capacitor electrode is located between the aforementioned first shielding conductor and the aforementioned third capacitor electrode. As a result, a good Q value can be obtained.

[0134] (Note 3) The filter described in Note 1 may also include: a first coupling capacitor pattern (72A) connected to the aforementioned first via electrode portion; and a second coupling capacitor pattern (72B) connected to the aforementioned second via electrode portion, formed on the same layer as the aforementioned first coupling capacitor pattern, and capacitively coupled to the aforementioned first coupling capacitor pattern. This allows for the attainment of a good Q value.

[0135] (Note 4) Alternatively, in the filter described in Appendix 3, the first distance (D1), which is the distance between the aforementioned first coupling capacitor pattern and the aforementioned first capacitor electrode, may be less than twice the second distance (D2), which is the distance between the aforementioned first shielding conductor and the aforementioned first capacitor electrode. By setting the first distance to be shorter, a better Q value can be obtained. The coupling capacitor electrode does not prevent the first distance from being set to be shorter.

[0136] (Note 5) Alternatively, in the filter described in Appendix 4, the aforementioned first distance can be less than or equal to the aforementioned second distance. This allows for the acquisition of a good Q value.

[0137] (Note 6) Alternatively, in any of the filters described in Appendices 1 to 5, a third shielding conductor (12C) may be formed between the first and second shielding conductors, with the layer containing the capacitor electrode located between the layer containing the third shielding conductor and the layer containing the coupling capacitor electrode, and a portion of the capacitor electrode facing a portion of the third shielding conductor. This allows for a coupling capacitance corresponding to the area of ​​the overlap between the third shielding conductor and the capacitor electrode.

[0138] (Note 7) Alternatively, in the filter described in Appendix 1, the third resonator (11C) among the plurality of aforementioned resonators may include: a third via electrode portion (20C2) among the plurality of aforementioned via electrode portions; and a third capacitor electrode (19C) connected to the aforementioned third via electrode portion and formed on a layer different from the aforementioned second capacitor electrode, serving as the aforementioned capacitor electrode. The filter may also include a third coupling capacitor pattern (60EB) connected to the aforementioned third via electrode portion and capacitively coupled to the aforementioned second capacitor electrode. This allows for the attainment of a good Q value.

[0139] (Note 8) The filter described in Note 7 may also include: a second coupling capacitor pattern (72B), which is connected to the aforementioned second via electrode portion and formed on the same layer as the aforementioned third capacitor electrode, and is capacitively coupled to the aforementioned third capacitor electrode; and a first coupling capacitor pattern (72A), which is connected to the aforementioned first via electrode portion and formed on the same layer as the aforementioned second coupling capacitor pattern, and is capacitively coupled to the aforementioned second coupling capacitor pattern. Therefore, a good Q value can be obtained.

[0140] Furthermore, the present invention is not limited to the above disclosure, and various configurations can be adopted without departing from the spirit of this disclosure.

Claims

1. A filter (10) comprising: The dielectric substrate (14) has a first main surface (14a) and a second main surface (14b) located on the opposite side of the first main surface. A first shielding conductor (12A) is formed on the first main surface side of the dielectric substrate; A second shielding conductor (12B) is formed on the second main surface side of the dielectric substrate; Multiple resonators (11) each have a via electrode portion (20) formed between the first shielding conductor and the second shielding conductor, and capacitor electrodes (18, 19C) connected to the via electrode portion; and The coupling capacitor electrode (17) is formed on a different layer than the layer on which the capacitor electrode is formed, and is not connected to any of the plurality of resonators, and is opposite to the first shielding conductor. The first resonator (11A) of the plurality of resonators includes: a first via electrode portion (20A) of the plurality of via electrode portions; and a first capacitor electrode (18A) connected to the end of the first via electrode portion as the capacitor electrode. The second resonator (11B) of the plurality of resonators includes: a second via electrode portion (20B) of the plurality of via electrode portions; and a second capacitor electrode (18B) connected to the end of the second via electrode portion and formed on the same layer as the first capacitor electrode as the capacitor electrode. One part (17AB1) of the coupling capacitor electrode is located between the first shielding conductor and the first capacitor electrode, and the other part (17AB2) of the coupling capacitor electrode is located between the first shielding conductor and the second capacitor electrode.

2. The filter according to claim 1, wherein, The third resonator (11C) among the plurality of resonators includes: a third via electrode portion (20C) among the plurality of via electrode portions; and a third capacitor electrode (18C) connected to the end of the third via electrode portion as a capacitor electrode. A portion of the first coupling capacitor electrode (17) of the plurality of coupling capacitor electrodes is located between the first shielding conductor and the first capacitor electrode, and another portion of the first coupling capacitor electrode is located between the first shielding conductor and the second capacitor electrode. A portion (17BC1) of the second coupling capacitor electrode (17) of the plurality of coupling capacitor electrodes is located between the first shielding conductor and the second capacitor electrode, and another portion (17BC2) of the second coupling capacitor electrode is located between the first shielding conductor and the third capacitor electrode.

3. The filter according to claim 1 further comprises: The first coupling capacitor pattern (72A) is connected to the first via electrode portion; and The second coupling capacitor pattern (72B) is connected to the second via electrode portion and is formed on the same layer as the first coupling capacitor pattern, and is capacitively coupled to the first coupling capacitor pattern.

4. The filter according to claim 3, wherein, The first distance (D1), which is the distance between the first coupling capacitor pattern and the first capacitor electrode, is less than twice the second distance (D2), which is the distance between the first shielding conductor and the first capacitor electrode.

5. The filter according to claim 4, wherein, The first distance is less than or equal to the second distance.

6. The filter according to any one of claims 1 to 5 further comprises a third shielding conductor (12C) formed between the first shielding conductor and the second shielding conductor. The layer on which the capacitor electrode is formed is located between the layer on which the third shielding conductor is formed and the layer on which the coupling capacitor electrode is formed. A portion of the capacitor electrode is opposite to a portion of the third shielding conductor.

7. The filter according to claim 1, wherein, The third resonator (11C) among the plurality of resonators includes: a third via electrode portion (20C2) among the plurality of via electrode portions; and a third capacitor electrode (19C) connected to the third via electrode portion and formed on a layer different from the second capacitor electrode as the capacitor electrode. The filter also includes a third coupling capacitor pattern (60EB) that is connected to the third via electrode and capacitively coupled to the second capacitor electrode.

8. The filter according to claim 7, further comprising: A second coupling capacitor pattern (72B) is connected to the second via electrode portion and is formed on the same layer as the third capacitor electrode, and is capacitively coupled to the third capacitor electrode; and The first coupling capacitor pattern (72A) is connected to the first via electrode portion and is formed on the same layer as the second coupling capacitor pattern, and is capacitively coupled to the second coupling capacitor pattern.

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