Multi-path gas mixing device and semiconductor process equipment

Abstract

The invention provides a multi-path gas mixing device and semiconductor process equipment, and relates to the technical field of semiconductors. The mixing device comprises a gas mixing block and a gas isolation structure embedded in the gas mixing block, the gas isolation structure comprises a plurality of gas inlet areas isolated from one another, one gas inlet area is used for transmitting one path of gas, and each gas inlet area is provided with a plurality of through holes; the gas mixing block comprises at least one gas inlet hole, and after each path of gas enters the gas mixing block through the at least one gas inlet hole, the gas enters the internal space of the gas isolation structure through the plurality of through holes of the gas inlet area of the respective space to be mixed; and gas can be prevented from flowing back to other gas inlet channels after entering the gas mixing block.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a multi-gas mixing apparatus and semiconductor process equipment. Background Technology

[0002] Semiconductor processes typically have stringent requirements regarding the uniformity of particles and gas mixtures, as well as the density of thin film deposition. Particles refer to tiny solid particles (typically >0.1 μm) generated during the process, which can adhere to the wafer surface, leading to device short circuits, leakage current, or decreased yield. Multi-gas mixing devices, through their internal flow channel design, ensure that various gases (such as liquid sources, specialty gases, etc.) are thoroughly mixed within a confined space before being introduced into the process chamber for thin film deposition, playing a crucial role in process performance.

[0003] In known mixing devices, the inlets of the special gas pipeline and the liquid source pipeline are very close and mix in the same space. If there is an unhealthy gas ratio or the gas in the special gas pipeline cannot enter due to external reasons, the liquid source will backflow into the special gas pipeline, which will lead to a deterioration of the particle defects in the deposited film. Summary of the Invention

[0004] In view of this, this application provides a multi-channel gas mixing device and a semiconductor process equipment. When multiple gases are mixed through the mixing device, it helps to suppress gas backflow and prevent gas from entering other gas pipelines, which could cause deterioration of particle defects in the deposited thin film.

[0005] In a first aspect, this application provides a multi-channel gas mixing device, including a mixing block and a gas isolation structure embedded in the mixing block. The gas isolation structure includes multiple mutually isolated inlet areas, one inlet area for transmitting one channel of gas, and each inlet area is provided with multiple through holes.

[0006] The gas mixing block includes at least one air inlet. After each gas enters the gas mixing block through the at least one air inlet, it enters the internal space of the gas isolation structure through the multiple through holes in the air intake area of ​​its respective space for mixing.

[0007] In some embodiments, the diameter of the internal space gradually changes from top to bottom, with the diameter at the top of the internal space being larger than that at the bottom.

[0008] In some embodiments, each of the air intake regions includes at least one through hole that is evenly distributed from top to bottom.

[0009] In some embodiments, an isolation member is included between two adjacent air intake areas, and the inner wall of the air mixing block is provided with a mating groove corresponding to the isolation member, and the isolation member is fitted into the mating groove.

[0010] In some embodiments, the cross-sectional area between the outer walls of the gas-insulating structure is the same from top to bottom.

[0011] In some embodiments, the gas mixing block includes a plurality of air intake pipes communicating with the plurality of air intake areas, each air intake pipe being used to transmit one gas path, one air intake pipe corresponding to one air intake area, and the distance between two adjacent air intake pipes being 26.8mm-27.2mm.

[0012] In some embodiments, an isolation element is included between two adjacent air intake areas, and the distance between each air intake pipe and the adjacent isolation element is 13.45mm-13.55mm.

[0013] In some embodiments, the intake regions are evenly distributed among the plurality of intake regions.

[0014] In some embodiments, the gas mixing block further includes a transmission channel communicating with the gas outlet of the internal space. The transmission channel is also connected to a cleaning gas channel, through which the cleaning gas and the multiple gases enter the process chamber.

[0015] In a second aspect, this application provides a semiconductor process apparatus, including the mixing apparatus described in the first aspect.

[0016] The gas mixing device proposed in this application introduces a gas isolation structure to isolate the gas inlet of each gas before mixing into an independent space. This allows each gas to enter the mixing block and then enter the internal space of the gas isolation structure through multiple through holes in its own space for mixing. This helps to suppress gas backflow and prevent gas from entering other gas pipelines, which could cause deterioration of the particle defect performance of the deposited film. Attached Figure Description

[0017] The accompanying drawings are included to provide a further understanding of this application; they are incorporated into and constitute a part of this application. The drawings illustrate embodiments of this application and, together with this specification, serve to explain the principles of this application. In the drawings:

[0018] Figure 1 This is a schematic diagram of an existing multi-channel gas mixing device;

[0019] Figure 2 This is a view of a multi-channel gas mixing device provided in an embodiment of this application;

[0020] Figure 3This is a top view of a multi-channel gas mixing device provided in an embodiment of this application;

[0021] Figure 4 This is a schematic diagram of a gas isolation structure provided in an embodiment of this application;

[0022] Figure 5 This is a partial cross-sectional view of a multi-channel gas mixing device provided in an embodiment of this application.

[0023] The reference numerals in the figure are as follows:

[0024] 10. Special gas pipelines;

[0025] 11. Liquid source piping;

[0026] 20. Mixed gas blocks;

[0027] 21. Gas-isolated structure;

[0028] 210. Air intake area;

[0029] 211. Air intake area;

[0030] 212. Air intake area;

[0031] 213. Through hole;

[0032] 200. Air intake port;

[0033] 201. Intake pipe;

[0034] 202. Intake pipe;

[0035] 203. Transmission channel;

[0036] 204. Clean the gas passage;

[0037] 205. Mating groove;

[0038] 214. Isolation components;

[0039] 206. Rubber ring groove. Detailed Implementation

[0040] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this application. For those skilled in the art, these drawings can be applied to other similar scenarios without creative effort. Unless obvious from the context or otherwise specified, the same reference numerals in the drawings represent the same structures or operations.

[0041] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0042] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of this application. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0043] In the description of this application, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this application; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0044] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0045] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, these terms have no special meaning and therefore should not be construed as limiting the scope of protection of this application. In addition, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application's specification may have been chosen by the applicant according to his or her judgment, and their detailed meanings are explained in the relevant sections of this description. Moreover, this application should be understood not only through the actual terms used, but also through the meaning implied by each term.

[0046] It should be understood that when a component is referred to as "on another component," "connected to another component," "coupled to another component," or "in contact with another component," it can be directly on, connected to, coupled to, or in contact with that other component, or there may be an inserting component. In contrast, when a component is referred to as "directly on another component," "directly connected to," "directly coupled to," or "directly in contact with" another component, there is no inserting component.

[0047] As mentioned above, in currently known mixing devices, the inlets of the multiple gas pipelines are very close together, such as... Figure 1 The mixing device shown includes a special gas pipeline 10 and a liquid source pipeline 11. The special gas and the liquid source flow through the special gas pipeline 10 and the liquid source pipeline 11 respectively and then mix in the same space. If there is an unhealthy gas ratio or if the gas in the special gas pipeline 10 cannot be introduced due to external reasons, the liquid source will backflow into the special gas pipeline, which will lead to the deterioration of the particle defect performance of the deposited film.

[0048] In semiconductor thin film deposition processes, "specialty gas" refers to the gaseous core raw material that directly participates in the chemical reaction of the thin film, such as ozone. ,oxygen ,water vapor ,hydrogen Formic acid Etc. Liquid sources are volatile liquid chemicals (such as organometallic compounds and inorganic esters), for example, tetraethyl orthosilicate (TEOS), etc.

[0049] To alleviate the above problems, one embodiment of this application proposes a multi-channel gas mixing device.

[0050] See Figure 2 The multi-gas mixing device includes a mixing block 20 and a gas isolation structure 21 embedded in the mixing block 20. The gas isolation structure 21 includes multiple mutually isolated air intake areas. Figure 3 and Figure 4 As shown, the gas isolation structure 21 includes three mutually isolated air intake areas: air intake area 210, air intake area 211 and air intake area 212. Each air intake area is used to transmit one gas path, and each air intake area is provided with multiple through holes 213.

[0051] See also Figure 3 The mixing block 20 includes at least one air inlet 200. Each gas stream enters the mixing block 20 through its corresponding air inlet 200 and then enters the internal space of the gas isolation structure 21 through multiple through-holes in its respective air intake area for mixing. By using the above-mentioned multi-gas mixing device, the inlet space of each gas stream can be isolated, and flow resistance can be introduced through multiple through-holes in each air intake area to constrain the flow trajectory of each gas stream and prevent backflow of each gas stream into the pipelines of other gas streams.

[0052] For example, assuming the multiplexed gases include TEOS and O3, see [link to previous section] Figure 3 The gas isolation structure 21 separates the TEOS inlet and the O3 inlet into two independent spaces. After entering the mixing block 20, TEOS enters the internal space of the gas isolation structure 21 through multiple through-holes in the intake area 211, while O3 enters the internal space of the gas isolation structure 21 through multiple through-holes in the intake area 210. When the gas ratio is unhealthy or O3 is not introduced, TEOS will flow directly to the bottom of the gas isolation structure 21 after entering the internal space due to flow resistance, instead of flowing into the O3 pipeline, thus preventing TEOS from flowing back into the O3 pipeline.

[0053] In some embodiments, see Figure 4In the gas isolation structure 21, each air intake area is evenly distributed. Each air intake area has multiple through holes 213 arranged at intervals from top to bottom. The diameter of each through hole 213 is 0.95mm-1.05mm. An isolation element 214 is included between two adjacent air intake areas to isolate the inlet space of each gas path.

[0054] In some embodiments, the diameter of the internal space of the gas isolation structure 21 gradually changes from top to bottom, with the diameter at the top of the internal space being larger than that at the bottom, resembling an hourglass shape (e.g., Figure 4 (As shown). After multiple gas streams enter the internal space of the gas isolation structure, the hourglass-shaped structure allows for more uniform gas mixing and further suppresses backflow. Furthermore, the gas isolation structure is relatively easy to manufacture and implement, simple and efficient, and can effectively control the gas flow, thus suppressing backflow.

[0055] In some embodiments, both the outer contour and the inner contour of the gas isolation structure 21 can be hourglass-shaped. Alternatively, in other embodiments, the inner contour of the gas isolation structure 21 is hourglass-shaped, but the outer contour is another regular shape, such as a cylinder. See also Figure 2 and Figure 4 Although the internal space of the gas isolation structure 21 has an hourglass shape, its outer contour is cylindrical, and the cross-sectional area between its outer walls is the same from top to bottom. Compared to structures where both the inner and outer contours are hourglass-shaped (i.e., the outer contour contracts and expands synchronously with the internal flow channel), this gas isolation structure, with a cylindrical outer contour and an hourglass-shaped interior, allows for comprehensive adaptation from structural design to practical application. It offers advantages in five dimensions: processing feasibility, assembly compatibility, flow field stability, strength and reliability, and cost control. The following analysis will elaborate on these advantages in conjunction with structural characteristics and gas mixing principles:

[0056] 1. Processing and manufacturing difficulties are greatly reduced.

[0057] The hourglass shape, both inside and out, presents two major processing challenges: the contraction / expansion of the outer contour requires complex surface machining (such as five-axis milling and grinding), and the coaxiality and symmetry of the inner and outer surfaces must be guaranteed (otherwise, it will lead to eccentric flow channels and uneven air mixing). In addition, if air inlet holes need to be opened on the contraction / expansion outer surface, it is difficult to control the consistency of hole position angle and depth (the surface positioning reference is unstable, and the drilling is prone to tilting, resulting in deviation of the angle between the air inlet channel and the internal flow channel). The outer cylindrical + inner hourglass structure perfectly avoids the above problems. The outer cylindrical surface is a regular body of revolution, and the machining can be completed with ordinary turning, and the accuracy is easy to guarantee (cylindricity and coaxiality can be achieved with conventional tooling). In addition, the cylindrical surface serves as a flat positioning reference, and conventional equipment such as drilling machines and CNC milling machines can be used when opening air inlet holes. The hole position distribution (such as uniform circumferential arrangement), hole diameter accuracy, and the angle between the hole and the internal flow channel can all be precisely controlled. It is even possible to batch drill holes and then finish machine the inner hourglass-shaped flow channel, increasing production efficiency by more than 30%.

[0058] 2. Enhanced assembly and system compatibility

[0059] The aforementioned mixing devices in industrial equipment typically require docking with components such as pipes, cavities, and flanges. Cylindrical surfaces offer a standardized docking form: they can be directly fixed to upstream and downstream pipes using conventional connection methods such as threads, flanges, and clamps, eliminating the need for custom-designed irregular connectors (internal and external hourglass structures require specially designed joints to accommodate their contraction / expansion profiles, resulting in high processing costs and poor versatility). The uniform radial dimensions of the cylindrical outer contour allow for precise estimation of installation space, facilitating layout in compact equipment (the contraction section of internal and external hourglass structures may interfere with surrounding components, while the expansion section wastes space). Furthermore, if temperature and pressure sensors need to be integrated, the cylindrical surface can be directly drilled to install sensor probes without the need for additional mounting brackets (installing sensors on irregular curved surfaces can easily lead to sealing failure).

[0060] 3. Flow field stability and mixing efficiency are easier to optimize.

[0061] The core of gas mixing is the shearing and mixing of the primary fluid (internal hourglass-shaped channel) and the secondary fluid (entering through the cylindrical through-hole). The outer cylindrical structure has a significant advantage in flow field control.

[0062] The secondary fluid intake is more uniform: multiple through holes (such as 12-24) can be evenly opened around the cylindrical surface. The secondary fluid enters the internal hourglass-shaped flow channel vertically or obliquely from all sides, forming an "annular air intake curtain". The contact area with the main fluid (accelerated along the axial direction through the throat) is larger, the shearing is more complete, and the uniformity of air mixing is improved (the outer surface of the inner and outer hourglass-shaped structure is curved, and the through holes can only be distributed along the curved surface. The air intake direction is prone to be biased towards the flow channel expansion side, resulting in local over-intake and local under-intake).

[0063] The main fluid flow field is more stable: the outer cylindrical structure has no contraction / expansion on the wall surface, and the boundary layer of the inner hourglass-shaped flow channel is not easily disturbed by the external structure (the outer curved surface of the inner and outer hourglass-shaped structures will cause uneven thickness of the flow channel wall, which is prone to thermal deformation / stress deformation under high temperature or high pressure, thereby destroying the contraction-expansion flow field of the main body, resulting in airflow separation and eddy current loss).

[0064] Lower pressure loss: The intake path of the cylindrical through-hole is short and straight, and the secondary fluid flow resistance is small (the through-hole of the inner and outer hourglass structure needs to pass through the curved wall, and the channel may be tilted or bent, which leads to an increase in secondary fluid pressure loss, requiring additional increase in intake pressure to compensate).

[0065] 4. Higher strength and reliability, lower maintenance costs

[0066] Structural strength: The radial force of the cylindrical surface is uniform, and it has a stronger resistance to internal and external pressure (for example, in high-pressure mixed gas scenarios, the cylindrical wall can be thickened to improve its compressive strength, and it is easy to process; the contraction section of the inner and outer hourglass-shaped structure has a thinner wall and the expansion section has a thicker wall, resulting in uneven stress distribution. Stress concentration is likely to occur at the junction of the throat and the expansion section, which may lead to cracking after long-term use).

[0067] Wear resistance and cleaning: The wear of the internal hourglass-shaped flow channel is mainly concentrated in the throat. The external cylindrical structure can be hardened separately for the internal flow channel (such as by spraying a ceramic coating), while the external cylindrical surface is not easily worn. The outer curved surface of the inner and outer hourglass-shaped structures is prone to dust and dirt accumulation, and is difficult to clean (the curved grooves are prone to trapping dirt).

[0068] Maintenance and replacement: The standardized design of the outer cylindrical structure allows for quick disassembly and replacement, while the irregular contours of the inner and outer hourglass structures require precise matching with the equipment, necessitating recalibration and positioning during maintenance, which takes longer.

[0069] 5. Superior cost control (significant advantages in mass production scenarios)

[0070] Raw materials: Cylindrical blanks (such as round steel bars and seamless steel pipes) are readily available and have a high utilization rate (they can be directly machined after cutting, with little waste); Inner and outer hourglass-shaped structures require custom-made irregular blanks, resulting in a high material waste rate (for example, casting blanks require the making of special molds, and machining blanks require the removal of a large amount of excess material).

[0071] Processing cost: Conventional turning and drilling equipment can meet production needs, without the need for high-end five-axis machining centers (internal and external hourglass-shaped structures require five-axis machining, which takes a long time and costs 2-3 times that of cylindrical structures).

[0072] After-sales cost: The structure is simple and the failure rate is low. When repairing, only the through hole seal or the internal flow channel bushing needs to be replaced. There is no need to replace the whole structure (if the outer curved surface or the internal flow channel of the inner and outer hourglass structure is damaged, the whole structure needs to be scrapped and replaced).

[0073] In some embodiments, see Figure 3 The mixing block 20 includes multiple intake pipes connected to multiple intake areas, such as... Figure 3 The intake pipes 201 and 202 are included. Each intake pipe is used to transmit one gas path, and one intake pipe corresponds to one intake area. The distance between two adjacent intake pipes is 26.8mm-27.2mm. Figure 3 The d1 value is 26.8mm-27.2mm. Each adjacent intake area is separated by an isolator 214, and the distance between each intake pipe and the adjacent isolator 214 is 13.45mm-13.55mm. Figure 3 The diameter d2 is 13.45mm-13.55mm.

[0074] In known processes, the entry of clean gas into the aforementioned multiple gas pipelines can lead to pipeline corrosion, affecting their service life. In this application embodiment, as a feasible approach, see [reference needed]. Figure 2 The mixing block 20 is equipped with a transmission channel 203 that communicates with the outlet end of the internal space of the gas isolation structure 21. The transmission channel 203 is also connected to the clean gas channel 204. Both clean gas and multiple gases can enter the process chamber through the transmission channel 203. After adding the gas isolation structure 21, the backflow of clean gas into the pipelines of the multiple gases can be prevented by the flow resistance, thus preventing corrosion of the pipelines, extending the pipeline life and improving process performance.

[0075] In some embodiments, see Figure 4 and Figure 5 Each of the two adjacent air intake areas includes an isolation element 214. The inner wall of the mixing block 20 is provided with a mating groove 205 corresponding to the isolation element 214. The isolation element 214 is fitted into the corresponding mating groove 205. The isolation element 214 and the mating groove 205 cooperate with each other to limit the isolation element 214.

[0076] Furthermore, in some embodiments, see also [link to previous document]. Figure 5 The mixing device may also include a top cover 30, and the gas mixing block 20 may also include a rubber ring groove 206. The top cover 30 is sealed with the rubber ring groove 206 and contacts the upper end face of the gas isolation structure 21, further restricting the degree of freedom of the gas isolation structure 21.

[0077] Another embodiment of this application also proposes a semiconductor process apparatus that can be applied to multiple fields such as vacuum bonding in the panel industry, semiconductor chip packaging, microelectronic integrated circuits, precision optical component manufacturing, and solar photovoltaic production. The semiconductor process apparatus includes a process chamber and the aforementioned multi-gas mixing device.

[0078] It should be noted that the number of mutually isolated air intake areas in a gas isolation structure can be ≥2. Figure 4 The gas isolation structure is evenly divided into 3 air intake areas, which is just one example. The number can also be other, mainly depending on the number of multiple gas streams.

[0079] Furthermore, the through holes arranged at intervals from top to bottom in each air intake area can be of equal diameter and equal intervals, or of different diameters and / or different intervals. For example, the diameter of each through hole in each air intake area is designed to change in a gradient from top to bottom. If the diameter gradually increases from top to bottom, the flow resistance of the smaller holes at the top is high and the flow resistance of the larger holes at the bottom is low. Gas preferentially flows downward through the low flow resistance path, inhibiting its backflow into other gas pipelines.

[0080] Alternatively, the distribution density of each through hole in each air intake area can be designed to vary from top to bottom in a gradient manner, with the upper part having a higher distribution density (i.e., hole spacing) than the lower part. This gradient distribution can result in a higher gas flow rate in the lower part, causing the gas to converge towards the bottom and inhibiting backflow into other gas pipelines.

[0081] The basic concepts have been described above. This description is provided to enable any person skilled in the art to practice the various aspects described herein. However, it should be understood that the scope of protection of this application should be determined by the appended claims and should not be limited to the specific structures and components of the embodiments explained above.

[0082] Obviously, the above disclosure is merely an example and does not constitute a limitation of this application for those skilled in the art. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0083] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0084] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0085] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0086] Although this application has been described with reference to specific embodiments, those skilled in the art should recognize that the above embodiments are only used to illustrate this application, and various equivalent changes or substitutions can be made without departing from the spirit of this application. Therefore, any changes or modifications to the above embodiments within the essential spirit of this application will fall within the scope of the claims of this application.

Claims

1. A mixing device for multipath gas, characterized by, The gas mixing block comprises a gas mixing block and a gas isolation structure embedded in the gas mixing block, the gas isolation structure comprises a plurality of gas inlet areas isolated from each other, one gas inlet area is used for transmitting one way of gas, each gas inlet area is provided with a plurality of through holes; The gas mixing block comprises at least one gas inlet hole, each way of gas enters the gas mixing block through the at least one gas inlet hole, and then enters the internal space of the gas isolation structure through the plurality of through holes of the gas inlet area in the respective space for mixing.

2. The mixing device of claim 1, wherein, The caliber size of the internal space from top to bottom is gradually changed, and the caliber size of the top of the internal space is larger than that of the bottom.

3. The mixing device of claim 1, wherein, Each of the gas inlet areas comprises at least one through hole uniformly distributed from top to bottom.

4. The mixing device of claim 1, wherein, Adjacent two gas inlet areas comprise a partition, and the inner wall of the gas mixing block is provided with a matching groove corresponding to the partition, and the partition is embedded in the matching groove.

5. The mixing device of claim 1, wherein, The cross-sectional area between the outer walls of the gas isolation structure is the same from top to bottom.

6. The mixing device of claim 1, wherein The gas mixing block comprises a plurality of gas inlet pipes in communication with the plurality of gas inlet areas, each gas inlet pipe is used for transmitting one way of gas, one gas inlet pipe corresponds to one gas inlet area, and the distance between adjacent two gas inlet pipes is 26.8mm-27.2mm.

7. The mixing device of claim 6, wherein Adjacent two gas inlet areas comprise a partition, and the distance between each gas inlet pipe and the adjacent partition is 13.45mm-13.55mm.

8. The mixing device of claim 3, wherein, The plurality of gas inlet areas are uniformly distributed.

9. The mixing device of claim 1, wherein, The gas mixing block further comprises a transmission channel in communication with the gas outlet end of the internal space, and the transmission channel is also communicated with a cleaning gas channel, and the cleaning gas and the plurality of ways of gas enter the process chamber through the transmission channel.

10. A semiconductor process apparatus, characterized by, It comprises: A process chamber and a mixing device according to any one of claims 1-9.

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