Micro-product glass carrier plate for semiconductor packaging and preparation method of micro-product glass carrier plate

Abstract

The invention relates to the field of semiconductor support plate preparation, in particular to a preparation method of a micro glass support plate for semiconductor packaging. The raw materials of the invention comprise basic glass powder, a Maco Baiyi spherical material, hexagonal boron nitride micro-powder, a sintering aid and a water-based binder. According to the method provided by the invention, the high-speed airflow slag granulation is combined with the spherical granulation process to prepare the Maco Baiyi spherical material, and then the finished product is obtained through the steps of mixing, forming, sintering and purifying. The dielectric constant of the carrier plate is smaller than or equal to 3.73, the dielectric loss is smaller than or equal to 0.0011, the ion impurity is smaller than or equal to 0.0012%, the density is larger than or equal to 99.1%, the mass production efficiency of the spherical material is 1t / day, the daily productivity of the carrier plate is 5000 pieces, the cost is reduced, and the problems that an existing carrier plate is high in dielectric loss, many in impurity and difficult in mass production are solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor substrate fabrication, and more specifically to a method for fabricating a micro glass substrate for semiconductor packaging. Background Technology

[0002] Semiconductor substrates must meet the following requirements at 10GHz: dielectric constant (ε) ≤ 3.8, dielectric loss (tanδ) ≤ 0.0012, ionic impurities (Cl- / Na+) ≤ 0.0015%, and density ≥ 98.5%. In existing technologies, most semiconductor substrates rely on high-purity alumina as filler, which results in very high dielectric loss, rarely exceeding 0.002, failing to meet the demands of high-frequency signal transmission. The required spherical material is typically produced using traditional molding granulation, resulting in a sphericity < 85%, leading to uneven material dispersion and low yield. Furthermore, the raw materials may contain ionic impurities that easily corrode chip electrodes, resulting in a packaging yield < 97%, thus increasing production costs.

[0003] Therefore, inventing a carrier plate that can simultaneously solve the problems of high dielectric loss, high ionic impurities, and low production efficiency and output has great development potential. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention provides a micro-glass carrier for semiconductor packaging and its preparation method. The method involves preparing spherical materials using a high-speed gas flow slag granulation combined with a spherical granulation process, followed by mixing, molding, sintering, and purification steps to obtain the finished product. This invention achieves a carrier with a dielectric constant ≤3.73, dielectric loss ≤0.0011, ionic impurities ≤0.0012%, and density ≥99.1% at 10GHz. The spherical material has a mass production efficiency of 1 t / day, and a daily carrier production capacity of 5000 pieces. This reduces costs and solves the problems of high dielectric loss, high impurity content, and difficulty in mass production associated with existing carriers.

[0005] This invention discloses a micro glass substrate for semiconductor packaging, which is composed of the following components in parts by weight: Basic glass powder: 55~65 parts; Hongbaiyi spherical material: 25~30 parts; hexagonal boron nitride micro powder: 4~6 parts; sintering aid: 2~3 parts; water-based binder: 1~2 parts.

[0006] Preferably, the base glass powder is a mixture of silicon dioxide, boron oxide and aluminum oxide in a mass ratio of 1:1:1.

[0007] Preferably, the diameter of the Hongbaiyi spherical material is 30-50 mesh.

[0008] Preferably, the diameter of the hexagonal boron nitride micro powder is 2~3 μm.

[0009] Preferably, the sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1.

[0010] Preferably, the water-based adhesive is polyvinyl alcohol.

[0011] This invention also discloses a method for preparing a micro glass substrate for semiconductor packaging, the method comprising the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen is introduced to granulate the slag using a granulation device, and then the temperature is lowered to obtain primary particles, which are then screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: The basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid and water-based binder are added to the ball mill in sequence, and the speed of the ball mill is controlled at 250 r / min, and the mixture is mixed for 2 hours. After the mixture is uniform, it is dry-pressed at 50 MPa to obtain the carrier plate blank. Then, the temperature is gradually increased to 750℃, held for 2 hours, and then ultrasonically cleaned with deionized water to obtain the carrier plate.

[0012] Preferably, in step S1, the nitrogen pressure is 0.8~1.2 MPa.

[0013] Preferably, in step S2, the carrier plate forming and sintering step, the gradient temperature rise is divided into three stages: the first stage is raised to 350°C and held for 10 minutes, the second stage is raised to 550°C and held for 15 minutes, and the third stage is raised to 750°C.

[0014] Preferably, in the S3 surface modification step, the volume ratio of ethanol to water is 8:2; and the mass fraction of the modifier solution is 5-8%.

[0015] Preferably, in step S2, the heating rate for each segment is 15°C / min.

[0016] Compared with the prior art, the beneficial effects of the present invention are: This invention provides a method for preparing a micro glass substrate for semiconductor packaging, which has the following characteristics: (1) The substrate has a dielectric constant ≤3.73 and dielectric loss ≤0.0011 at 10GHz, which is far superior to the dielectric loss of traditional substrates above 0.002, meeting the high-frequency signal transmission requirements of advanced process chips of 7nm and below, and effectively reducing signal delay and attenuation. The total content of ionic impurities is ≤0.0012%, which significantly reduces the risk of chip electrode corrosion and improves the packaging yield to 99.4%. At the same time, the density is ≥99.1% and the impact strength is ≥178MPa. The structural stability and mechanical reliability are outstanding, and it can withstand the thermal stress and mechanical impact during the packaging process.

[0017] (2) When using high-speed airflow slag granulation equipment and patented granulation technology, Hongbaiyi's spherical material production efficiency reaches 1 t / day, which is twice that of traditional compression molding granulation technology. The daily production capacity of carrier plates is stable at 5,000 pieces, which is double the production capacity of 2,400 to 2,600 pieces / day of existing technology, greatly improving the industry's supply capacity. The uniformity of raw material mixing and dispersion is ≥98%, and combined with standardized process parameters, it ensures the performance consistency of batch production, which is conducive to large-scale industrial production. Detailed Implementation

[0018] The following embodiments are provided to better understand the present invention and are not limited to the preferred embodiments described. They do not constitute a limitation on the content and scope of protection of the present invention. Any product that is the same as or similar to the present invention, derived by any person under the guidance of the present invention or by combining the features of the present invention with other prior art, falls within the protection scope of the present invention.

[0019] For experiments not specifically described in the examples, the procedures or conditions should be followed according to the conventional experimental procedures described in the literature in this field. Reagents or instruments whose manufacturers are not specified are all commercially available conventional reagent products.

[0020] Example 1: A micro glass substrate for semiconductor packaging, comprising the following components in parts by weight: The mixture comprises 55 parts of base glass powder; 25 parts of Hongbaiyi spherical material; 4 parts of hexagonal boron nitride micro powder; 2 parts of sintering aid; and 1 part of water-based binder. The base glass powder is a mixture of silica, boron oxide, and alumina in a mass ratio of 1:1:1; the Hongbaiyi spherical material has a diameter of 30 mesh; the hexagonal boron nitride micro powder has a diameter of 2 μm; the sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1; and the water-based binder is polyvinyl alcohol.

[0021] A method for preparing a micro glass substrate for semiconductor packaging includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen gas is introduced into the slag granulation equipment for granulation, and then the temperature is lowered to obtain the initial particles. The pressure of nitrogen gas is 0.8MPa. Then, it is screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: Basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid, and water-based binder are added sequentially to a ball mill, and the ball mill speed is controlled at 250 r / min for 2 hours. After uniform mixing, the mixture is dry-pressed at 50 MPa to obtain a carrier plate blank. Then, the temperature is increased in three stages: the first stage is raised to 350℃ and held for 10 minutes, the second stage is raised to 550℃ and held for 15 minutes, and the third stage is raised to 750℃ and held for 2 hours. The heating rate for each stage is 15℃ / min. Then, the plate is ultrasonically cleaned with deionized water to obtain the carrier plate.

[0022] Example 2: A micro glass substrate for semiconductor packaging, comprising the following components in parts by weight: The composition includes 57 parts of base glass powder; 26 parts of Hongbaiyi spherical material; 4.3 parts of hexagonal boron nitride micro powder; 2.2 parts of sintering aid; and 1.2 parts of water-based binder. The base glass powder is a mixture of silicon dioxide, boron oxide, and aluminum oxide in a mass ratio of 1:1:1. The Hongbaiyi spherical material has a diameter of 30 mesh; the hexagonal boron nitride micro powder has a diameter of 2 μm; the sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1; and the water-based binder is polyvinyl alcohol.

[0023] A method for preparing a micro glass substrate for semiconductor packaging includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen gas is introduced to granulate the slag using a granulation device, and then the temperature is lowered to obtain the initial particles. The pressure of nitrogen gas is 0.9MPa. Then, the particles are screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: Basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid, and water-based binder are added sequentially to a ball mill, and the ball mill speed is controlled at 250 r / min for 2 hours. After uniform mixing, the mixture is dry-pressed at 50 MPa to obtain a carrier plate blank. Then, the temperature is increased in three stages: the first stage is raised to 350℃ and held for 10 minutes, the second stage is raised to 550℃ and held for 15 minutes, and the third stage is raised to 750℃ and held for 2 hours. The heating rate for each stage is 15℃ / min. Then, the plate is ultrasonically cleaned with deionized water to obtain the carrier plate.

[0024] Example 3: A micro glass substrate for semiconductor packaging, comprising the following components in parts by weight: The composition includes 59 parts of base glass powder; 27 parts of Hongbaiyi spherical material; 4.7 parts of hexagonal boron nitride micro powder; 2.4 parts of sintering aid; and 1.4 parts of water-based binder. The base glass powder is a mixture of silicon dioxide, boron oxide, and alumina in a mass ratio of 1:1:1. The Hongbaiyi spherical material has a diameter of 30 mesh. The hexagonal boron nitride micro powder has a diameter of 2 μm. The sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1. The water-based binder is polyvinyl alcohol.

[0025] A method for preparing a micro glass substrate for semiconductor packaging includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen gas is introduced to granulate the slag using a granulation device, and then the temperature is lowered to obtain the initial particles. The pressure of the nitrogen gas is 1.0MPa. Then, the particles are screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: Basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid, and water-based binder are added sequentially to a ball mill, and the ball mill speed is controlled at 250 r / min for 2 hours. After uniform mixing, the mixture is dry-pressed at 50 MPa to obtain a carrier plate blank. Then, the temperature is increased in three stages: the first stage is raised to 350℃ and held for 10 minutes, the second stage is raised to 550℃ and held for 15 minutes, and the third stage is raised to 750℃ and held for 2 hours. The heating rate for each stage is 15℃ / min. Then, the plate is ultrasonically cleaned with deionized water to obtain the carrier plate.

[0026] Example 4: A micro glass substrate for semiconductor packaging, comprising the following components in parts by weight: The composition includes 61 parts of base glass powder; 28 parts of Hongbaiyi spherical material; 5 parts of hexagonal boron nitride micro powder; 2.6 parts of sintering aid; and 1.6 parts of water-based binder. The base glass powder is a mixture of silica, boron oxide, and alumina in a mass ratio of 1:1:1. The Hongbaiyi spherical material has a diameter of 30 mesh. The hexagonal boron nitride micro powder has a diameter of 2 μm. The sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1. The water-based binder is polyvinyl alcohol.

[0027] A method for preparing a micro glass substrate for semiconductor packaging includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen gas is introduced to granulate the slag using a granulation device, and then the temperature is lowered to obtain the initial particles. The nitrogen pressure is 1.1MPa. Then, the particles are screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: Basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid, and water-based binder are added sequentially to a ball mill, and the ball mill speed is controlled at 250 r / min for 2 hours. After uniform mixing, the mixture is dry-pressed at 50 MPa to obtain a carrier plate blank. Then, the temperature is increased in three stages: the first stage is raised to 350℃ and held for 10 minutes, the second stage is raised to 550℃ and held for 15 minutes, and the third stage is raised to 750℃ and held for 2 hours. The heating rate for each stage is 15℃ / min. Then, the plate is ultrasonically cleaned with deionized water to obtain the carrier plate.

[0028] Example 5: A micro glass substrate for semiconductor packaging, comprising the following components in parts by weight: The composition includes 63 parts base glass powder; 29 parts Hongbaiyi spherical material; 5.5 parts hexagonal boron nitride micro powder; 2.8 parts sintering aid; and 1.8 parts water-based binder. The base glass powder is a mixture of silica, boron oxide, and alumina in a mass ratio of 1:1:1. The Hongbaiyi spherical material has a diameter of 30 mesh. The hexagonal boron nitride micro powder has a diameter of 2 μm. The sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1. The water-based binder is polyvinyl alcohol.

[0029] A method for preparing a micro glass substrate for semiconductor packaging includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen gas is introduced into the slag granulation equipment for granulation, and then the temperature is lowered to obtain the initial particles. The pressure of nitrogen gas is 1.15MPa. Then, it is screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: Basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid, and water-based binder are added sequentially to a ball mill, and the ball mill speed is controlled at 250 r / min for 2 hours. After uniform mixing, the mixture is dry-pressed at 50 MPa to obtain a carrier plate blank. Then, the temperature is increased in three stages: the first stage is raised to 350℃ and held for 10 minutes, the second stage is raised to 550℃ and held for 15 minutes, and the third stage is raised to 750℃ and held for 2 hours. The heating rate for each stage is 15℃ / min. Then, the plate is ultrasonically cleaned with deionized water to obtain the carrier plate.

[0030] Example 6: A micro glass substrate for semiconductor packaging, comprising the following components in parts by weight: The mixture comprises 65 parts of base glass powder; 30 parts of Hongbaiyi spherical material; 6 parts of hexagonal boron nitride micro powder; 3 parts of sintering aid; and 2 parts of water-based binder. The base glass powder is a mixture of silica, boron oxide, and alumina in a mass ratio of 1:1:1; the Hongbaiyi spherical material has a diameter of 30 mesh; the hexagonal boron nitride micro powder has a diameter of 2 μm; the sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:1; and the water-based binder is polyvinyl alcohol.

[0031] A method for preparing a micro glass substrate for semiconductor packaging includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen gas is introduced to granulate the slag using a granulation device, and then the temperature is lowered to obtain the initial particles. The nitrogen pressure is 1.2MPa. Then, the particles are screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: Basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid, and water-based binder are added sequentially to a ball mill, and the ball mill speed is controlled at 250 r / min for 2 hours. After uniform mixing, the mixture is dry-pressed at 50 MPa to obtain a carrier plate blank. Then, the temperature is increased in three stages: the first stage is raised to 350℃ and held for 10 minutes, the second stage is raised to 550℃ and held for 15 minutes, and the third stage is raised to 750℃ and held for 2 hours. The heating rate for each stage is 15℃ / min. Then, the plate is ultrasonically cleaned with deionized water to obtain the carrier plate.

[0032] Comparative Example 1: The Hongbaiyi spherical material was replaced with high-purity alumina, and the remaining components and preparation methods were the same as in Example 4.

[0033] Comparative Example 2: No hexagonal boron nitride micro powder was added; the remaining components and preparation methods were the same as in Example 4.

[0034] Comparative Example 3: The preparation of spherical materials was changed to traditional granulation equipment and traditional molding granulation, while the other components and preparation methods were the same as in Example 4.

[0035] Comparative Example 4: In step S2, the temperature was directly raised to 750°C and held for 2 hours instead of using segmented heating. The other components and preparation methods were the same as in Example 4.

[0036] The performance of the semiconductor packaging micro glass substrates prepared in Examples 1-6 and Comparative Examples 1-4 was tested, and the test results are shown in the table below:

[0037] As shown in the table above, in Examples 1-6, the weight percentages of the base glass powder and the Hongbaiyi spherical material increased in a gradient, forming a composite structure of glass phase and crystalline phase. The base glass powder provided a low-dielectric matrix, while the Hongbaiyi spherical material generated anorthite low-dielectric crystalline phase during sintering. Together, they reduced the dielectric constant to 3.70. When the base glass powder exceeded 61 parts, the excess glass phase led to uneven crystalline phase dispersion, and the dielectric constant slightly increased. When the spherical material was insufficient, the crystalline phase support weakened, resulting in lower density and impact strength. In Comparative Example 1, after replacing the spherical material with high-purity alumina, the dielectric constant increased to 4.20. This was because alumina has a high dielectric constant and poor compatibility with the glass phase, leading to increased interface defects, which in turn affected the impact strength.

[0038] In Examples 1-4, the content of hexagonal boron nitride micropowder increased from 4 parts to 5 parts, and the dielectric loss decreased from 0.0013 to 0.0010. However, when excessive hexagonal boron nitride micropowder was added, the agglomeration of the micropowder led to uneven dispersion, resulting in increased loss. In Comparative Example 2, without the addition of hexagonal boron nitride micropowder, the dielectric loss directly increased to 0.0022, significantly increasing the loss.

[0039] The sintering aid promotes densification by lowering the softening point of the glass phase. In Examples 1-4, as the dosage increased from 2 parts to 2.6 parts, the density increased from 99.0% to 99.3%. However, with further increases in dosage, excess Li... + The introduction of ionic impurities caused the impurity content to rise from 0.0009% to 0.0011%, indicating that 2.6 parts in Example 4 is the optimal number of parts for impurity control.

[0040] The preparation of Hongbaiyi spherical material relies on the granulation effect of high-speed nitrogen gas flow, and the nitrogen pressure directly affects the sphericity and purity. In Examples 1-4, when the pressure increases from 0.8 MPa to 1.1 MPa, the gas flow velocity increases accordingly, causing the slag to be quickly dispersed into particles, with a sphericity ≥92% and the residual water-soluble chloride reduced to below 0.002%. Ultimately, this is reflected in the reduction of ionic impurities from 0.0011% to 0.0009%. When the pressure continues to increase, the impact force of the gas flow becomes too strong, causing some particles to break, which in turn increases the amount of trace impurities introduced.

[0041] The three-stage gradient heating process involves removing polyvinyl alcohol at low and medium temperatures to prevent cracking, promoting crystal nucleation in the medium temperature stage, and achieving densification and suppressing grain coarsening in the high temperature stage. Example 4 achieved a density of 99.3% using this process, while in Comparative Example 4, when the temperature was directly raised to 750°C, the binder rapidly decomposed, generating pores, resulting in a density decrease to 98.6% and a decrease in impact strength of 8 MPa.

[0042] Comparative Example 3 uses traditional compression granulation, with a spherical material production efficiency of only 0.45 t / day. This is because the irregular particle shape leads to a raw material mixing uniformity of less than 95%, ultimately reducing the carrier plate production capacity to 2500 pieces / day. Examples 1-6 employ a high-speed airflow granulation combined with rotary screening, achieving a spherical material efficiency of 1 t / day. The ball-bearing effect of the regular spherical particles improves the mixing uniformity to over 98%, ensuring a stable daily production capacity of 5000 pieces, thus enabling large-scale production.

[0043] Example 7: The diameter of the Hongbaiyi spherical material in the raw materials was screened (20 mesh, 30 mesh, 40 mesh, 50 mesh, 60 mesh), and the performance of the obtained micro glass substrate for semiconductor packaging was tested. The test results are shown in the table below:

[0044] As shown in the table above, the 30-50 mesh size exhibits the best and most stable performance. This size falls within the optimal range for a coarse-particle skeleton and fine-particle filler, achieving the densest packing of the raw materials and minimizing porosity. This structure eliminates significant porosity defects within the carrier plate, resulting in a stable dielectric constant of 3.71-3.73 and a dielectric loss ≤0.0011, effectively preventing signal delay and attenuation. The spherical particles in this mesh range exhibit good flowability, preventing agglomeration during planetary ball mill mixing, achieving a mixing uniformity ≥98%. This uniform dispersion ensures a more complete reaction during sintering, allowing ionic impurities to be thoroughly removed through ultrasonic cleaning, with a total content ≤0.0010%, significantly reducing the risk of chip electrode corrosion. After sintering, the 30-50 mesh spherical particles form a dense bonded structure of glassy phase and anorthite crystal phase, achieving a density of 99.2%-99.3% and a stable impact strength of 179-180 MPa. The ball bearing effect of spherical particles effectively reduces internal stress concentration, enabling the carrier to withstand thermal stress and mechanical impact during the packaging process, resulting in excellent structural stability.

[0045] Example 8: The diameters of the hexagonal boron nitride micropowder in the raw materials were screened (1μm, 2μm, 2.5μm, 3μm, 4μm), and the performance of the obtained micro glass substrates for semiconductor packaging was tested. The test results are shown in the table below:

[0046] As shown in the table above, the 2-3 μm hexagonal boron nitride micropowder particle size forms a suitable match with Hongbaiyi's spherical materials. The hexagonal boron nitride micropowder can be uniformly dispersed in the gaps between the spherical materials without agglomeration or voids, resulting in a continuous and uniform internal structure of the carrier plate. The dielectric constant is stable at 3.70-3.72, and the dielectric loss is ≤0.0011. The hexagonal boron nitride micropowder in this particle size range has a moderate specific surface area and its surface energy is in a balanced range, avoiding the agglomeration problem of small particles while ensuring sufficient contact with other raw materials. The mixing uniformity reaches ≥98%, resulting in a more complete reaction during sintering, and ionic impurities can be thoroughly removed by ultrasonic cleaning. During sintering, the hexagonal boron nitride micropowder in this particle size range can fill the micropores formed by the glass phase and spherical materials, promoting the densification process and achieving a density of 99.2%-99.3%. Meanwhile, the layered structure of hexagonal boron nitride micro powder can disperse the thermal stress and mechanical impact during the encapsulation process, making the impact strength stable at 179~180MPa, and the structure more stable.

[0047] In summary, Example 4 achieved optimal equilibrium, forming a composite structure of glassy phase and anorthite crystalline phase, resulting in an 11.9% reduction in dielectric constant and a 9.1% increase in impact strength compared to Comparative Example 1. In the preparation method, high-speed gas flow slag granulation combined with rotary screening technology enabled a spherical material production efficiency of 1 t / day, twice that of traditional compression molding granulation; three-stage gradient heating sintering avoided porosity defects caused by direct heating, increasing density by 0.7%. The synergistic effect of these two processes resulted in a substrate production capacity of 5000 wafers / day, twice that of existing technologies. This invention, through formula optimization, process innovation, and key raw material parameter screening, achieves a dual guarantee of performance and mass production efficiency for micro-glass substrates used in semiconductor packaging.

[0048] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A micro glass substrate for semiconductor packaging, characterized in that, It consists of the following components in parts by weight: Basic glass powder: 55~65 parts; Hongbaiyi spherical material: 25~30 parts; hexagonal boron nitride micro powder: 4~6 parts; sintering aid: 2~3 parts; water-based binder: 1~2 parts.

2. The micro glass substrate for semiconductor packaging according to claim 1, characterized in that, The base glass powder is a mixture of silicon dioxide, boron oxide and aluminum oxide in a mass ratio of 1:1:

1.

3. The micro glass substrate for semiconductor packaging according to claim 1, characterized in that, The diameter of the Hongbaiyi spherical material is 30-50 mesh.

4. The micro glass substrate for semiconductor packaging according to claim 1, characterized in that, The diameter of the hexagonal boron nitride micro powder is 2~3μm.

5. The micro glass substrate for semiconductor packaging according to claim 1, characterized in that, The sintering aid is a mixture of lithium oxide and boron oxide in a mass ratio of 1:

1.

6. The micro glass substrate for semiconductor packaging according to claim 1, characterized in that, The water-based adhesive is polyvinyl alcohol.

7. A method for preparing a micro glass substrate for semiconductor packaging, characterized in that, Includes the following steps: Preparation of S1 Hongbaiyi spherical material: The mixed slag of tricalcium aluminate and dicalcium silicate is heated to 1200℃, nitrogen is introduced to granulate the slag using a granulation device, and then the temperature is lowered to obtain primary particles, which are then screened by a rotary granulator to obtain Hongbaiyi spherical material. S2 Carrier Plate Forming and Sintering: The basic glass powder, Hongbaiyi spherical material, hexagonal boron nitride micro powder, sintering aid and water-based binder are added to the ball mill in sequence, and the speed of the ball mill is controlled at 250 r / min, and the mixture is mixed for 2 hours. After the mixture is uniform, it is dry-pressed at 50 MPa to obtain the carrier plate blank. Then, the temperature is gradually increased to 750℃, held for 2 hours, and then ultrasonically cleaned with deionized water to obtain the carrier plate.

8. The method for preparing a micro glass substrate for semiconductor packaging according to claim 7, characterized in that, In step S1, the pressure of the nitrogen gas is 0.8~1.2 MPa.

9. The method for preparing a micro glass substrate for semiconductor packaging according to claim 7, characterized in that, In step S2, the carrier plate forming and sintering step, the gradient temperature rise is divided into three stages: the first stage is raised to 350°C and held for 10 minutes, the second stage is raised to 550°C and held for 15 minutes, and the third stage is raised to 750°C.

10. The method for preparing a micro glass substrate for semiconductor packaging according to claim 9, characterized in that, The heating rate for each segment is 15℃ / min.

Images