IZO target material as well as preparation method and application thereof

Abstract

The invention discloses an IZO target material as well as a preparation method and application thereof. The IZO thin film comprises the following components in parts by weight: 75-90 parts of indium oxide; 10 to 25 parts of zinc oxide; 1-5 parts of germanium oxide; and 0.5 to 1.5 parts of silicon oxide. By doping germanium oxide and silicon oxide in a specific amount, the sheet resistance of the IZO thin film prepared from the IZO target material can be reduced, and the crystallization property of the IZO thin film at a high temperature can be inhibited. Due to the fact that glass network bodies GeO2 and SiO2 are added to inhibit crystallization of the IZO thin film at the high temperature, meanwhile, + 4 valence is doped into In2O3, the purpose of n-type doping can be achieved, the carrier concentration of IZO is increased, and the resistivity of the thin film is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor materials technology, and in particular to an IZO target, its preparation method, and its application. Background Technology

[0002] Flexible and wearable electronic devices are attracting significant attention due to their lightweight, versatile geometries, and ability to seamlessly integrate next-generation technologies. Cutting-edge applications in this future of electronics are rapidly emerging, exemplified by smart clothing, electronic skin, and transparent heaters. Flexible transparent conductive electrodes (FTCEs) are indispensable elements in the design and development of flexible electronic devices and systems, playing a crucial role in achieving flexibility and stretchability. To date, transparent conductive oxides, particularly indium tin oxide (ITO), are the most commonly used electrode materials in optoelectronic devices. ITO films are typically deposited on transparent plastic substrates, such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). However, amorphous ITO films exhibit poor conductivity and transparency. Conversely, the inherent rigidity and brittleness of crystalline ITO films, the high-temperature processing required for crystallization, and significant light reflection limit their application in flexible optoelectronic devices.

[0003] To address these issues, researchers focused on amorphous IZO thin films, hoping to simplify the fabrication process of growing amorphous films on flexible substrates using a one-step magnetron sputtering technique. However, this technique is difficult to adapt to the high-temperature heat treatment during manufacturing; above 200°C, the resistivity increases significantly, affecting charge transport. The main reason is the reduction of oxygen vacancies in the film after high-temperature heat treatment, leading to a decrease in carrier concentration.

[0004] Therefore, it is necessary to develop an IZO target that can reduce the sheet resistance of IZO films and suppress the crystallization properties of IZO films at high temperatures. Summary of the Invention

[0005] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the first aspect of the present invention provides an IZO target material, which enables the fabrication of highly flexible transparent conductive films.

[0006] A second aspect of the present invention provides a method for preparing an IZO target.

[0007] A third aspect of the present invention provides an IZO thin film.

[0008] The fourth aspect of this invention provides an application of IZO target material.

[0009] According to a first aspect of the present invention, an IZO target material is provided, comprising the following components in parts by weight: 75-90 parts of indium oxide; 10-25 parts zinc oxide; 1-5 parts of germanium oxide; 0.5 to 1.5 parts of silicon dioxide.

[0010] According to a preferred embodiment of the present invention, the IZO target material comprises the following components in parts by weight: 85-90 parts of indium oxide; 10-15 parts zinc oxide; 1-5 parts of germanium oxide; 0.5 to 1.5 parts of silicon dioxide.

[0011] The IZO target material according to embodiments of the present invention has at least the following beneficial effects: This invention reduces the sheet resistance of IZO films prepared from IZO targets and suppresses the crystallization of IZO films at high temperatures by using specific amounts of germanium oxide and silicon oxide doping. This is because the addition of the glass network GeO2 and SiO2 suppresses the crystallization of IZO films at high temperatures, while the addition of +4 valence dopant into In2O3 achieves the purpose of n-type doping, increasing the carrier concentration of IZO and improving the film resistivity.

[0012] According to a second aspect of the present invention, a method for preparing an IZO target as described in the first aspect of the present invention is provided, comprising the following steps: S1. Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder and dispersant are mixed and ground to obtain a slurry; the slurry and binder are mixed, stirred and spray-granulated to obtain powder; S2. The powder is cold isostatically pressed in a mold to obtain a preform; S3. The preform is sintered and cooled to obtain the IZO target material.

[0013] According to a preferred embodiment of the present invention, in step S2, the forming pressure of the cold isostatic pressing is 200 MPa ~ 250 MPa.

[0014] According to a preferred embodiment of the present invention, in step S2, the holding time of the cold isostatic pressing is 20 min to 40 min.

[0015] According to a preferred embodiment of the present invention, in step S3, the sintering step is as follows: First, raise the temperature to 650℃~750℃ and hold for one stage; then raise the temperature to 1300℃~1350℃ and hold for another stage.

[0016] According to a preferred embodiment of the present invention, the heat preservation time is 1 h to 5 h.

[0017] According to a preferred embodiment of the present invention, the heat preservation time II is 8 h to 15 h.

[0018] According to a preferred embodiment of the present invention, the dispersant includes at least one of polyacrylamide, ammonium polymethacrylate, or ammonium citrate.

[0019] According to a preferred embodiment of the present invention, the adhesive comprises at least one of polyvinyl alcohol, polyvinyl butyral, or polyethylene oxide.

[0020] According to a preferred embodiment of the present invention, in step S1, the grinding method is ball milling, and the parameters of the ball milling include: the ball milling medium is water and zirconium beads, the zirconium beads used have a particle size of 1~1.5mm, the ratio of zirconium beads to water is 6:1~5:1, and the ball milling time is 1~1.5 hours.

[0021] According to a preferred embodiment of the present invention, in step S1, the amount of the adhesive is 1% to 2% of the slurry.

[0022] According to a preferred embodiment of the present invention, in step S1, the amount of the dispersant is 0.3% to 0.5% of the total mass, calculated based on the total mass of indium oxide powder, zinc oxide powder, germanium oxide powder, and silicon oxide powder.

[0023] According to a preferred embodiment of the present invention, in step S1, the atomization speed of the spray granulation is 27,000 rpm to 30,000 rpm.

[0024] A third aspect of the present invention provides an IZO thin film prepared from the IZO target material described in the first aspect of the present invention.

[0025] The fourth aspect of the present invention provides the application of the IZO target described in the first aspect of the present invention in the preparation of semiconductor materials.

[0026] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. Detailed Implementation

[0027] The following are specific embodiments of the present invention, and the technical solutions of the present invention will be further described in conjunction with the embodiments, but the present invention is not limited to these embodiments.

[0028] Unless otherwise specified, the reagents, methods and equipment used in this invention are all conventional reagents, methods and equipment in this technical field.

[0029] In some embodiments, the present invention provides an IZO target material comprising the following components in parts by weight: 75-90 parts of indium oxide; 10-25 parts zinc oxide; 1-5 parts of germanium oxide; 0.5 to 1.5 parts of silicon dioxide.

[0030] In this invention, by using specific amounts of germanium oxide and silicon oxide doping, the sheet resistance of IZO thin films prepared from IZO targets can be reduced and the crystallization properties of IZO thin films at high temperatures can be suppressed. This is because the addition of glass networks GeO2 and SiO2 suppresses the crystallization of IZO thin films at high temperatures, while the addition of +4 valence doping into In2O3 can achieve the purpose of n-type doping, increasing the carrier concentration of IZO and improving the film resistivity.

[0031] In some embodiments, the IZO target material comprises the following components in parts by weight: 85-90 parts of indium oxide; 10-15 parts zinc oxide; 1-5 parts of germanium oxide; 0.5 to 1.5 parts of silicon dioxide.

[0032] In some embodiments, the present invention provides a method for preparing an IZO target as described in the first aspect of the present invention, comprising the following steps: S1. Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder and dispersant are mixed and ground to obtain a slurry; the slurry and binder are mixed, stirred and spray-granulated to obtain powder; S2. The powder is cold isostatically pressed in a mold to obtain a preform; S3. The preform is sintered and cooled to obtain the IZO target material.

[0033] In some embodiments, in step S2, the forming pressure of the cold isostatic pressing is 200 MPa to 250 MPa. For example, it includes 200 MPa, 210 MPa, 220 MPa, 230 MPa, 240 MPa, 250 MPa, or a sub-range consisting of any two of the above values.

[0034] In some embodiments, the holding time for cold isostatic pressing in step S2 is 20 min to 40 min. For example, it includes 20 min, 25 min, 30 min, 31 min, 32 min, 33 min, 34 min, 35 min, 36 min, 40 min, or a sub-range consisting of any two of the above values.

[0035] In some embodiments, the sintering step in step S3 is as follows: First, raise the temperature to 650℃~750℃ and hold for one stage; then raise the temperature to 1300℃~1350℃ and hold for another stage.

[0036] In some embodiments, the heat preservation time I is 1 h to 5 h. For example, it includes 1 h, 2 h, 3 h, 4 h, 5 h, or a sub-range consisting of any two of the above values.

[0037] In some embodiments, the heat preservation time II is 8 h to 15 h. For example, it includes 8 h, 9 h, 10 h, 11 h, 12 h, 13 h, 14 h, 15 h, or a sub-range consisting of any two of the above values.

[0038] In some embodiments, the dispersant includes at least one of polyacrylamide, ammonium polymethacrylate, or ammonium citrate.

[0039] In some embodiments, the adhesive comprises at least one of polyvinyl alcohol, polyvinyl butyral, or polyethylene oxide.

[0040] In some embodiments, in step S1, the grinding method is ball milling, and the parameters of the ball milling include: the ball milling medium is water and zirconium beads, the zirconium beads used have a particle size of 1~1.5mm, the ratio of zirconium beads to water is 6:1~5:1, and the ball milling time is 1~1.5 hours.

[0041] In some embodiments, in step S1, the amount of the adhesive is 1% to 2% of the slurry.

[0042] In some embodiments, in step S1, the amount of the dispersant is 0.3% to 0.5% of the total mass of indium oxide powder, zinc oxide powder, germanium oxide powder, and silicon oxide powder.

[0043] In some embodiments, in step S1, the atomization speed of the spray granulation is 27,000 rpm to 30,000 rpm.

[0044] In some embodiments, the present invention provides an IZO thin film prepared from the IZO target material described in the first aspect of the present invention.

[0045] Therefore, the IZO thin film of the present invention has the characteristics of high flexibility, low resistance and high conductivity.

[0046] In some embodiments, the present invention provides the application of the IZO target described in the first aspect of the present invention in the preparation of semiconductor materials.

[0047] In the embodiments and comparative examples of the present invention, some of the raw materials are as follows: Indium oxide powder, zinc oxide powder, germanium oxide powder, and silicon oxide powder must have a purity of ≥99.99%. Preparation of indium oxide powder: Indium oxide powder was prepared using a chemical precipitation method. The specific surface area of ​​the powder was measured, and the measured specific surface area value was within 12 m². 2 / g to 20m 2 Between / g.

[0048] Zinc oxide powder was purchased from Shanghai Maclean Biochemical Technology Co., Ltd., product number 768612.

[0049] Germanium oxide powder and silicon oxide powder were purchased from Shanghai McLean Biochemical Technology Co., Ltd., with product numbers 768542 and S817562, respectively.

[0050] Example 1 This example provides an IZO target material, the raw materials for which are composed of the following components by mass fraction: 90 parts indium oxide powder, 10 parts zinc oxide powder, 1 part germanium oxide, and 0.5 parts silicon oxide. The preparation method is as follows: 1) Mixing: Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder, and 0.5% dispersant polyacrylamide are mixed and poured into a grinding mill to obtain a slurry. The amount of pure water added is the same as the weight of the powder, and the zirconium beads used have a particle size of 1 mm. 2% binder polyvinyl alcohol is added to the slurry, and after stirring for 2 hours, it can be spray-granulated into powder. The drying temperature is 120℃, and the atomization speed is 27000 rpm. 2) Molding: The above mixed powder is filled into a φ101.6mm circular mold, sealed, and cold isostatically pressed for 30 minutes and 200MPa.

[0051] 3) Sintering: The pressed preform is placed in a sintering furnace and kept under normal pressure. The temperature is increased to 750℃ at a rate of 1.5℃ / min and held for 3 hours to complete the degreasing process; then the temperature is increased to 1400℃ at a rate of 0.5℃ / min and held for 10 hours to complete the sintering process; subsequently, the temperature is decreased at a rate of 0.8℃ / min until it reaches 600℃, the program is turned off, and the furnace is cooled to room temperature to obtain the IZO target material.

[0052] 4) Processing: The target material after being taken out of the furnace is machined by rough grinding with 400-grit and 800-grit grinding wheels respectively to make the surface of the target material smooth. Finally, it is fixed to a copper back plate of the same size with an indium layer to complete the bonding process.

[0053] Example 2 This example provides an IZO target material, the raw materials for which are composed of the following components by mass fraction: 90 parts indium oxide powder, 10 parts zinc oxide powder, 1 part germanium oxide, and 1.5 parts silicon oxide. The preparation steps of this IZO target material are as follows: 1) Mixing: Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder, and 0.4% dispersant polyacrylamide are mixed and poured into a grinding mill to obtain a slurry. The amount of pure water added is consistent with the weight of the powder, and the zirconium beads used have a particle size of 1 mm. 1.5% binder polyvinyl alcohol is added to the slurry, and after stirring for 1.5 hours, it can be spray-granulated into powder. The drying temperature is 120℃, and the atomization speed is 27000 rpm. 2) Molding: The above mixed powder is filled into a φ101.6mm circular mold, sealed, and cold isostatically pressed for 30 minutes and 220MPa.

[0054] 3) Sintering: The pressed preform is placed in a sintering furnace and kept under normal pressure. The temperature is increased to 700℃ at a rate of 1.5℃ / min and held for 3 hours to complete the degreasing process; then the temperature is increased to 1400℃ at a rate of 0.5℃ / min and held for 10 hours to complete the sintering process; subsequently, the temperature is decreased at a rate of 0.8℃ / min until it reaches 600℃, the program is turned off, and the furnace is cooled to room temperature to obtain the IZO target material.

[0055] 4) Processing: The target material after being taken out of the furnace is machined by rough grinding with 400-grit and 800-grit grinding wheels respectively to make the surface of the target material smooth. Finally, it is fixed to a copper back plate of the same size with an indium layer to complete the bonding process.

[0056] Example 3 This example provides an IZO target material, the raw materials for which are composed of the following components in mass fraction: 90 parts indium oxide powder, 10 parts zinc oxide powder, 3 parts germanium oxide, and 0.5 parts silicon oxide.

[0057] The preparation steps for the IZO target are as follows: 1) Mixing: Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder, and 0.3% dispersant polyacrylamide are mixed and poured into a grinding mill to obtain a slurry. The amount of pure water added is the same as the weight of the powder, and the zirconium beads used have a particle size of 1 mm. 1% binder polyvinyl alcohol is added to the slurry, and after stirring for 1 hour, it can be spray-granulated into powder. The drying temperature is 120℃, and the atomization speed is 27000 rpm. 2) Molding: The above mixed powder is filled into a φ101.6mm circular mold, sealed, and cold isostatically pressed for 30 minutes and 250MPa.

[0058] 3) Sintering: The pressed preform is placed in a sintering furnace and kept under normal pressure. The temperature is increased to 650℃ at a rate of 1.5℃ / min and held for 3 hours to complete the degreasing process; then the temperature is increased to 1380℃ at a rate of 0.5℃ / min and held for 10 hours to complete the sintering process; subsequently, the temperature is decreased at a rate of 0.8℃ / min until it reaches 600℃, the program is turned off, and the furnace is cooled to room temperature to obtain the IZO target material.

[0059] 4) Processing: The target material after being taken out of the furnace is machined by rough grinding with 400-grit and 800-grit grinding wheels respectively to make the surface of the target material smooth. Finally, it is fixed to a copper back plate of the same size with an indium layer to complete the bonding process.

[0060] Example 4 This example provides an IZO target material, the raw materials for which are composed of the following components in mass fraction: 90 parts indium oxide powder, 10 parts zinc oxide powder, 3 parts germanium oxide, and 1.5 parts silicon oxide.

[0061] The preparation steps for the IZO target are as follows: 1) Mixing: Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder, and 0.3% dispersant polyacrylamide are mixed and poured into a grinding mill to obtain a slurry. The amount of pure water added is the same as the weight of the powder, and the zirconium beads used have a particle size of 1 mm. 1% binder polyvinyl alcohol is added to the slurry, and after stirring for 1 hour, it can be spray-granulated into powder. The drying temperature is 120℃, and the atomization speed is 27000 rpm. 2) Molding: The above mixed powder is filled into a φ101.6mm circular mold, sealed, and cold isostatically pressed for 30 minutes and 250MPa.

[0062] 3) Sintering: The pressed preform is placed in a sintering furnace and kept under normal pressure. The temperature is increased to 650℃ at a rate of 1.5℃ / min and held for 3 hours to complete the degreasing process; then the temperature is increased to 1380℃ at a rate of 0.5℃ / min and held for 10 hours to complete the sintering process; subsequently, the temperature is decreased at a rate of 0.8℃ / min until it reaches 600℃, the program is turned off, and the furnace is cooled to room temperature to obtain the IZO target material.

[0063] 4) Processing: The target material after being taken out of the furnace is machined by rough grinding with 400-grit and 800-grit grinding wheels respectively to make the surface of the target material smooth. Finally, it is fixed to a copper back plate of the same size with an indium layer to complete the bonding process.

[0064] Example 5 This example provides an IZO target material, the raw materials for which are composed of the following components in mass fraction: 90 parts indium oxide powder, 10 parts zinc oxide powder, 5 parts germanium oxide, and 0.5 parts silicon oxide.

[0065] The preparation steps for the IZO target are as follows: 1) Mixing: Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder, and 0.3% dispersant polyacrylamide are mixed and poured into a grinding mill to obtain a slurry. The amount of pure water added is the same as the weight of the powder, and the zirconium beads used have a particle size of 1 mm. 1% binder polyvinyl alcohol is added to the slurry, and after stirring for 1 hour, it can be spray-granulated into powder. The drying temperature is 120℃, and the atomization speed is 27000 rpm. 2) Molding: The above mixed powder is filled into a φ101.6mm circular mold, sealed, and cold isostatically pressed for 30 minutes and 250MPa.

[0066] 3) Sintering: The pressed preform is placed in a sintering furnace and kept under normal pressure. The temperature is increased to 650℃ at a rate of 1.5℃ / min and held for 3 hours to complete the degreasing process; then the temperature is increased to 1250℃ at a rate of 0.5℃ / min and held for 10 hours to complete the sintering process; subsequently, the temperature is decreased at a rate of 0.8℃ / min until it reaches 600℃, the program is turned off, and the furnace is cooled to room temperature to obtain the IZO target material.

[0067] 4) Processing: The target material after being taken out of the furnace is machined by rough grinding with 400-grit and 800-grit grinding wheels respectively to make the surface of the target material smooth. Finally, it is fixed to a copper back plate of the same size with an indium layer to complete the bonding process.

[0068] Example 6 This example provides an IZO target material, the raw materials for which are composed of the following components in mass fraction: 90 parts indium oxide powder, 10 parts zinc oxide powder, 5 parts germanium oxide, and 1.5 parts silicon oxide.

[0069] The preparation steps for the IZO target are as follows: 1) Mixing: Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder, and 0.3% dispersant polyacrylamide are mixed and poured into a grinding mill to obtain a slurry. The amount of pure water added is the same as the weight of the powder, and the zirconium beads used have a particle size of 1 mm. 1% binder polyvinyl alcohol is added to the slurry, and after stirring for 1 hour, it can be spray-granulated into powder. The drying temperature is 120℃, and the atomization speed is 27000 rpm. 2) Molding: The above mixed powder is filled into a φ101.6mm circular mold, sealed, and cold isostatically pressed for 30 minutes and 250MPa.

[0070] 3) Sintering: The pressed preform is placed in a sintering furnace and kept under normal pressure. The temperature is increased to 650℃ at a rate of 1.5℃ / min and held for 3 hours to complete the degreasing process; then the temperature is increased to 1250℃ at a rate of 0.5℃ / min and held for 10 hours to complete the sintering process; subsequently, the temperature is decreased at a rate of 0.8℃ / min until it reaches 600℃, the program is turned off, and the furnace is cooled to room temperature to obtain the IZO target material.

[0071] 4) Processing: The target material after being taken out of the furnace is machined by rough grinding with 400-grit and 800-grit grinding wheels respectively to make the surface of the target material smooth. Finally, it is fixed to a copper back plate of the same size with an indium layer to complete the bonding process.

[0072] Comparative Example 1 This example provides an IZO target material, which is prepared in the same way as in Example 1. The difference is that the raw materials for preparing this IZO target material are composed of the following components in terms of mass fraction: 90 parts of indium oxide powder, 10 parts of zinc oxide powder, and 1.5 parts of silicon oxide.

[0073] Comparative Example 2 This example provides an IZO target material, which is prepared in the same way as in Example 1. The difference is that the raw materials for preparing the IZO target material are composed of the following components in terms of mass fraction: 90 parts of indium oxide powder, 10 parts of zinc oxide powder, and 5 parts of germanium oxide.

[0074] Comparative Example 3 This example provides an IZO target material, which is prepared in the same way as in Example 1. The difference is that the raw materials for preparing this IZO target material are composed of the following components in mass fraction: 90 parts of indium oxide powder and 10 parts of zinc oxide powder.

[0075] Comparative Example 4 This example provides an IZO target material, which is prepared in the same way as in Example 1. The difference is that the raw materials for preparing the IZO target material are composed of the following components in terms of mass fraction: 90 parts of indium oxide powder, 10 parts of zinc oxide powder, and 1 part of germanium oxide.

[0076] Comparative Example 5 This example provides an IZO target material, which is prepared in the same way as in Example 1. The difference is that the raw materials for preparing this IZO target material are composed of the following components in terms of mass fraction: 90 parts of indium oxide powder, 10 parts of zinc oxide powder, and 0.5 parts of silicon oxide.

[0077] Performance testing The phase composition of the IZO target was analyzed using an X-ray diffractometer, and the resistivity of the target was measured using a resistivity meter.

[0078] Preparation of IZO sputtering targets: The cleaned PET substrate is loaded into the magnetron sputtering chamber and pumped to 2×10⁻⁶. -6 Torr high vacuum levels were used to pre-sputter the above targets (IZO targets of Examples 1-6 and Comparative Examples 1-4) for 10 min in a pure argon atmosphere to remove surface contamination. Subsequently, a DC power of 160 W was applied to the targets, and thin film deposition was performed under conditions of argon flow rate of 20 sccm, oxygen flow rate of 0.3 sccm, and working pressure of 1 mTorr, resulting in a film thickness of 200 nm. Annealing was then performed at 300 °C. The crystallinity of the film was analyzed using X-ray diffraction, and the bending properties of the film were tested as follows: The film deposited on PET was cut into 70 mm × 15 mm rectangles and subjected to 5000 cycles of bending tests with a bending radius of 8 mm. The resistance values ​​before and after bending were recorded (R after bending test, R0 after bending test, and the difference between the two was recorded as ΔR). The results are shown in Table 1.

[0079] Table 1

[0080] As can be seen from the data in Table 1, this invention overcomes the defects of single doping (such as GeO2 causing excessively low sintering temperature and poor solid solution of SiO2) by precisely controlling the ratio of the two dopants, significantly reducing the resistivity of the target material. Furthermore, GeO2 and SiO2, as glass network forgers, work together to effectively suppress the crystallization tendency of the IZO film at high temperatures. The higher melting point of SiO2 provides a stable framework, while GeO2 also participates in network formation. This allows the film to remain amorphous after treatment at higher temperatures (above 200°C), thus avoiding rigidity and brittleness caused by crystallization and maintaining the flexibility of the film.

[0081] The present invention has been described in detail above with reference to the embodiments of the present invention. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. An IZO sputtering target, characterized in that, Includes the following components, calculated in parts by weight: 75-90 parts of indium oxide; 10-25 parts zinc oxide; 1-5 parts of germanium oxide; 0.5 to 1.5 parts of silicon dioxide.

2. The IZO target material according to claim 1, characterized in that, Includes the following components, calculated in parts by weight: 85-90 parts of indium oxide; 10-15 parts zinc oxide; 1-5 parts of germanium oxide; 0.5 to 1.5 parts of silicon dioxide.

3. A method for preparing the IZO target material as described in claim 1 or 2, characterized in that, Includes the following steps: S1. Indium oxide powder, zinc oxide powder, germanium oxide powder, silicon oxide powder and dispersant are mixed and ground to obtain a slurry; the slurry and binder are mixed, stirred and spray-granulated to obtain powder; S2. The powder is cold isostatically pressed in a mold to obtain a preform; S3. The preform is sintered and cooled to obtain the IZO target material.

4. The preparation method according to claim 3, characterized in that, In step S2, the forming pressure of the cold isostatic pressing is 200 MPa ~ 250 MPa.

5. The preparation method according to claim 3, characterized in that, In step S2, the holding time for cold isostatic pressing is 20 min to 40 min.

6. The preparation method according to claim 3, characterized in that, In step S3, the sintering process is as follows: First, raise the temperature to 650℃~750℃ and hold for one stage; then raise the temperature to 1300℃~1350℃ and hold for another stage.

7. The preparation method according to claim 3, characterized in that, The dispersant includes at least one of polyacrylamide, ammonium polymethacrylate, or ammonium citrate.

8. The preparation method according to claim 3, characterized in that, The adhesive includes at least one of polyvinyl alcohol, polyvinyl butyral, or polyethylene oxide.

9. An IZO thin film, characterized in that, It is prepared from the IZO target material described in claim 1 or 2.

10. The application of the IZO target as described in claim 1 or 2 in the preparation of semiconductor materials.

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