Ion beam control device and ion optical device based on a composite electrode structure

Abstract

The application relates to the technical field of optical processing, and provides an ion beam control device based on a composite electrode structure and an ion optical device, which comprises a composite electrode structure and a power supply control module, the composite electrode structure comprises a first electrode assembly, a second electrode assembly and a third electrode assembly which are coaxially arranged in sequence along an ion beam transmission direction, and an insulating gap is arranged between the first electrode assembly, the second electrode assembly and the third electrode assembly; the first electrode assembly is composed of eight arc-shaped electrode plates which are independently and evenly arranged along a circumference, the second electrode assembly is a hollow conductive cylindrical electrode, and the third electrode assembly is composed of eight arc-shaped electrode plates which are independently and evenly arranged along a circumference; and the power supply control module is configured to switch the voltage applied to the composite electrode structure in an ion beam cluster size screening mode and an ion beam focusing and shaping mode, so as to realize the functions of ion beam cluster size screening or ion beam focusing and shaping.

Description

Ion beam control device and ion optics device based on composite electrode structure Technical Field

[0001] This application relates to the field of optical processing technology, and more specifically, to an ion beam control device and an ion optical device based on a composite electrode structure. Background Technology

[0002] With the rapid development of extreme ultraviolet lithography, high-energy lasers, space telescopes and other fields, extremely stringent requirements have been placed on the surface profile accuracy and surface roughness of short-wavelength optical components, requiring the simultaneous achievement of sub-nanometer-level profile accuracy and angstrom-level surface roughness.

[0003] Ion beam polishing, as a non-contact optical processing method, is often used for the final precision polishing of optical materials. The core objective of ion beam polishing is to efficiently remove surface defects, particularly errors in mid-to-high frequency spatial frequencies, requiring the ion beam's Gaussian removal function to have an extremely small full width at half maximum (FWHM). Existing ion sources typically use physical aperture truncation to obtain a small beam diameter and reduce the FWHM. However, this mechanical truncation not only blocks most ions, causing a significant reduction in beam current density and significantly impacting processing efficiency, but also makes it difficult to continuously adjust the aperture in a vacuum environment, thus failing to meet the dynamic requirements of complex surface defects for the removal function size.

[0004] Gas cluster ion beam technology, as a non-contact ultra-smooth processing technique, utilizes its unique lateral sputtering effect to achieve atomic-level material rearrangement, resulting in ultra-smooth processing. In the gas cluster ion beam ultra-smooth processing process, the core objective is to optimize surface roughness without damage. Cluster size is a crucial process parameter, requiring the screening of initially wide-distributed cluster beams to eliminate excessively small or large clusters. Traditional magnetic analyzers are bulky and have low mass resolution, while quadrupole mass analyzers have limited ability to screen large-mass clusters. Rotating electric field screening structures are simple and offer high mass resolution, but existing open multi-pole electrodes suffer from significant edge field interference. This uncontrolled electric field penetration causes the effective flight path of ions to deviate from its physical length, leading to a drift in the screening peak and a discrepancy between the actual screened cluster size and the calculated preset value, making it difficult to meet the requirements of ultra-smooth processing equipment. Summary of the Invention

[0005] The purpose of this application is to provide an ion beam control device and an ion optical device based on a composite electrode structure, which can solve at least one of the technical problems mentioned above. The specific solution is as follows:

[0006] According to the specific embodiments disclosed in this application, this application provides an ion beam control device based on a composite electrode structure, including:

[0007] A composite electrode structure includes a first electrode assembly, a second electrode assembly, and a third electrode assembly arranged coaxially along the ion beam transmission direction, with an insulating gap between the first electrode assembly, the second electrode assembly, and the third electrode assembly; the first electrode assembly consists of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference; the second electrode assembly is a hollow conductive cylindrical electrode; and the third electrode assembly consists of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference.

[0008] The power control module is configured to switch the voltage applied to the composite electrode structure between the ion beam cluster size screening mode and the ion beam focusing and shaping mode to achieve the functions of ion beam cluster size screening or ion beam focusing and shaping.

[0009] In some embodiments, in the ion beam cluster size screening mode, eight independently spaced arc-shaped plates of the first electrode assembly are sequentially subjected to multiphase AC voltages with a phase difference of π / 4 to generate a rotating uniform electric field; the second electrode assembly is grounded to construct a zero-field shielding region; eight independently spaced arc-shaped plates of the third electrode assembly are sequentially subjected to multiphase AC voltages with a phase difference of π / 4 to generate a rotating uniform electric field; by controlling the parameters of the frequency and phase of the AC voltages of the eight independently spaced arc-shaped plates of the first and third electrode assemblies, the ion beam cluster size screening is achieved.

[0010] In some embodiments, by controlling the AC voltage frequency of the eight independent arc-shaped plates of the first electrode assembly and the third electrode assembly, the flight time of cluster ions of the target size in the first electrode assembly and the third electrode assembly is the same and equal to one cycle of the AC voltage.

[0011] In some embodiments, in the ion beam focusing and shaping mode, the eight independently spaced arc-shaped plates of the first electrode assembly are shorted at the same potential and grounded; a DC high voltage is applied to the second electrode assembly to construct an electrostatic lens field; the eight independently spaced arc-shaped plates of the third electrode assembly are shorted at the same potential and grounded; the focusing and shaping of the ion beam is achieved by controlling the voltage parameters of the second electrode assembly.

[0012] In some embodiments, the angular interval between the eight independently spaced arc-shaped plates of the first electrode assembly and the third electrode group is 2-8°.

[0013] In some embodiments, the insulation gap is 1-5 mm.

[0014] In some embodiments, the length of the first electrode assembly and the third electrode assembly is 40-100 mm, the inner diameter is 15-25 mm, and the outer diameter is 20-30 mm.

[0015] In some embodiments, the second electrode assembly has a length of 20-60 mm, an inner diameter of 10-40 mm, and an outer diameter of 40-60 mm.

[0016] In some embodiments, the AC voltage amplitude is 2000-6000V.

[0017] This application also provides an ion optical device, including an ion beam control device based on a composite electrode structure as described in any of the above claims.

[0018] Compared with the prior art, the above-disclosed solution in this application has at least one of the following beneficial effects:

[0019] This application provides an ion beam control device based on a composite electrode structure, including a first electrode assembly, a second electrode assembly, and a third electrode assembly arranged coaxially along the ion beam transmission direction. The first and third electrode assemblies consist of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference. The second electrode assembly is a hollow conductive cylindrical electrode. This application has two switching modes. By applying a high voltage to the second electrode assembly and grounding the eight electrode assemblies at both ends, an electric field for an electrostatic lens is constructed. This mode can focus the ion beam, reducing the half-width of the removal function without sacrificing beam intensity, thereby improving the ability to correct surface errors of optical elements and processing efficiency. In the gas ion beam cluster ultra-smooth processing technology, the power control module applies sinusoidal AC voltages to the eight independent electrode plates of the first and third electrode assemblies, and sets the phase difference between adjacent electrode plates to π / 4, thereby synthesizing a rotating uniform electric field within the beam channel to modulate the radial velocity of the cluster ions. By controlling the frequency of the sinusoidal AC voltage and the frequency of the rotating electric field, the flight time of the target-sized cluster is made exactly one cycle, with only the radial velocity of the target-sized cluster changing from zero to zero, i.e., horizontal entry and horizontal exit. Simultaneously, the second electrode assembly is grounded, creating a "zero-field shielding zone," significantly reducing the axial extension of the rotating electric field. Finally, through phase compensation, the second electrode assembly applies a rotating electric field with the opposite phase to that of the first electrode assembly, causing the target-sized cluster to return to the central axis. This segmented screening structure of rotating field modulation-zero-field drift-rotating field demodulation effectively shields the edge field interference present in traditional open structures, achieving high-quality resolution screening of cluster size.

[0020] This application enables in-situ switching between two processes with different functional requirements, using the same device within a single apparatus to control the electrode voltage, thus saving costs. Its applications cover high-end manufacturing and scientific analysis fields that require both beam shaping and precise screening of incident particles. Attached Figure Description

[0021] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the disclosure of this application and, together with the description, serve to explain the principles of the disclosure. It is obvious that the drawings described below are merely some embodiments disclosed in this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings:

[0022] Figure 1 is an overall structural diagram of the composite electrode structure provided in the embodiment of this application;

[0023] Figure 2 is an axial view of the composite electrode structure provided in an embodiment of this application;

[0024] Figure 3 is a radial view of the composite electrode structure provided in an embodiment of this application;

[0025] Figure 4 is a schematic diagram of the electric field at different times when an AC voltage is applied to the composite electrode structure provided in the embodiment of this application;

[0026] Figure 5 is a schematic diagram of the first electrode assembly provided in this application embodiment with voltage applied to the eight arc-shaped plates;

[0027] Figure 6 is a schematic diagram of the voltage applied to the eight arc-shaped plates of the third electrode assembly provided in the embodiment of this application;

[0028] Figure 7 is a simulation diagram of the ion beam cluster screening process under the composite electrode structure screening mode provided in the embodiment of this application.

[0029] Figure 8 is a schematic diagram of the electric field distribution of the second electrode assembly without grounding under the screening mode of the composite electrode structure provided in the embodiment of this application;

[0030] Figure 9 is a schematic diagram of the electric field distribution of the grounded second electrode assembly in the screening mode of the composite electrode structure provided in the embodiment of this application;

[0031] Figure 10 is a schematic diagram of ion beam focusing under the shaping mode of the composite electrode structure provided in the embodiment of this application;

[0032] Figure 11 is a voltage-beam spot diameter relationship diagram of the composite electrode structure provided in the embodiment of this application under the shaping mode.

[0033] Figure label:

[0034] First electrode assembly 10, second electrode assembly 20, third electrode assembly 30, and insulation gap 40. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments disclosed in this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments disclosed in this application without creative effort are within the scope of protection of this application.

[0036] The terminology used in the embodiments disclosed in this application is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. The singular forms “a,” “said,” and “the” used in the embodiments disclosed in this application and the appended claims are also intended to include the plural forms, and “multiple” generally includes at least two unless the context clearly indicates otherwise.

[0037] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0038] It should be understood that although the terms first, second, third, etc., may be used to describe the embodiments disclosed in this application, these descriptions should not be limited to these terms. These terms are only used to distinguish the descriptions. For example, first may also be referred to as second without departing from the scope of the embodiments disclosed in this application, and similarly, second may also be referred to as first.

[0039] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or device. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or device that includes said element.

[0040] Ion beam polishing is a non-contact optical processing method based on physical sputtering, used for the final precision shaping of optical components. Its main technical characteristics include atomic-level processing accuracy, absence of edge effects, and high determinism of the removal function. However, to achieve high-precision shaping of surface errors, an extremely small removal function half-width is required. Currently, the method of simulating a physical aperture to cut off the beam at the ion source exit leads to a sharp drop in beam density, severely sacrificing processing efficiency, and making it impossible to adjust the beam diameter in real time under vacuum to adapt to error distributions in different regions. Although electrostatic lenses can be used to focus and shape the ion beam, existing lenses are typically single-function and cannot meet other ion beam control requirements.

[0041] Gas cluster ion beam (GCIB) is a surface treatment method that uses clusters of hundreds or thousands of atoms to bombard surfaces. Its main technical features include: significant lateral sputtering effect, the ability to achieve ultra-smooth surfaces, and the absence of deep lattice damage. Cluster size is a crucial process parameter, requiring screening of clusters with a wide initial distribution. Magnetic analyzers are bulky and have low mass resolution, while quadrupole mass analyzers have limited ability to screen large-mass clusters. Rotating electric field screening structures are simple and offer high mass resolution, but existing open multi-electrode systems suffer from significant edge field interference at the ends, causing the effective ion flight path to deviate from theoretical calculations, making it difficult to meet the requirements for high-resolution screening.

[0042] Moreover, current devices all achieve a single function through a single structure, failing to achieve the dual functions of ion beam focusing and shaping as well as a high-resolution rotating electric field screening structure through a single structure. Based on this, this application provides an ion beam control device based on a composite electrode structure, comprising: a composite electrode structure, the composite electrode structure including a first electrode assembly, a second electrode assembly, and a third electrode assembly arranged coaxially along the ion beam transmission direction, with an insulating gap between the first electrode assembly, the second electrode assembly, and the third electrode assembly; the first electrode assembly consists of eight independently spaced arc-shaped plates evenly distributed along the circumference; the second electrode assembly is a hollow conductive cylindrical electrode; and the third electrode assembly consists of eight independently spaced arc-shaped plates evenly distributed along the circumference; and a power control module configured to switch the voltage applied to the composite electrode structure between an ion beam cluster size screening mode and an ion beam focusing and shaping mode to achieve the functions of ion beam cluster size screening or ion beam focusing and shaping.

[0043] This application provides a composite electrode structure that integrates ion beam focusing and shaping with gas cluster screening. By utilizing structural reuse, it can achieve both the beam shaping function of an electrostatic lens and the shielding of edge field interference in a rotating electric field mode, thus enabling high-resolution cluster size screening. It can simultaneously meet the needs of two processes in one device, saving costs and showing broad application prospects in the field of high-end optical manufacturing.

[0044] The optional embodiments disclosed in this application are described in detail below with reference to the accompanying drawings.

[0045] As shown in Figures 1-3, this application provides an ion beam control device based on a composite electrode structure, including a composite electrode structure and a power control module. The power control module is used to apply a switchable voltage to the composite electrode structure to control the ion beam passing through the composite electrode structure. The composite electrode structure includes a first electrode assembly 10, a second electrode assembly 20, and a third electrode assembly 30 arranged coaxially along the ion beam transmission direction, with an insulating gap 40 between the first electrode assembly 10, the second electrode assembly 20, and the third electrode assembly 30. The first electrode assembly 10 consists of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference. The second electrode assembly 20 is a hollow conductive cylindrical electrode, and the third electrode assembly 30 consists of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference. The power control module is configured to switch the voltage applied to the composite electrode structure between an ion beam cluster size screening mode and an ion beam focusing and shaping mode to achieve the functions of ion beam cluster size screening or ion beam focusing and shaping.

[0046] Ion beam cluster size screening refers to the process of separating or selecting ion beam clusters formed by inert gas atoms (such as argon) bound together by van der Waals forces and carrying a single positive charge, based on their mass-to-charge ratio (m / z). Since each cluster carries only one charge, its mass-to-charge ratio is proportional to the number of atoms it contains (i.e., the mass number n). Therefore, this screening can effectively separate cluster ions of specific sizes (e.g., n = 500–2000) to meet the control requirements of sputtering energy and action scale in different precision ion processing techniques (such as ultra-smooth polishing).

[0047] Ion beam focusing and shaping refers to focusing, collimating, or controlling the raw ion beam emitted from an ion source to achieve a specific spatial morphology (such as Gaussian or flat-top) of ion current density distribution across its cross-section. The purpose is to meet the requirements of subsequent ion beam processing techniques (such as shaping, etching, or polishing) for uniform ion incident flux and contour accuracy, thereby improving processing consistency and surface quality.

[0048] The ion beam control device based on the composite electrode structure provided in this application utilizes structural reuse to achieve both beam shaping by electrostatic lenses and shielding of edge field interference in rotating electric field mode, thereby enabling high-resolution cluster size screening.

[0049] In some embodiments, the angular interval between the eight independently spaced arc-shaped plates of the first electrode assembly 10 and the third electrode assembly 30 relative to the axis is 2-8°, so as to ensure that the electric field generated by each electrode can still form a continuous electric field under a phase difference of π / 4.

[0050] In some embodiments, the insulation gap between the first electrode assembly 10, the second electrode assembly 20, and the third electrode assembly 30 is 1-5 mm.

[0051] In some embodiments, the first electrode assembly 10 and the third electrode assembly 30 have the same inner diameter, outer diameter, and length to ensure that the passage time of the ion beam cluster is exactly equal to the voltage cycle. Optionally, the length of the first electrode assembly 10 and the third electrode assembly 30 is 40-100 mm, the inner diameter is 15-25 mm, and the outer diameter is 20-30 mm.

[0052] In some embodiments, the outer diameters of the first electrode assembly 10 and the third electrode assembly 30 are smaller than the outer diameter of the second electrode assembly 20. Optionally, the second electrode assembly 20 has a length of 20-60 mm, an inner diameter of 10-40 mm, and an outer diameter of 40-60 mm.

[0053] In some embodiments, in the ion beam cluster size screening mode, eight independently spaced arc-shaped plates of the first electrode assembly 10 are sequentially subjected to multiphase AC voltages with a phase difference of π / 4 to generate a rotating uniform electric field; the second electrode assembly 20 is grounded to construct a zero-field shielding region; eight independently spaced arc-shaped plates of the third electrode assembly 30 are sequentially subjected to multiphase AC voltages with a phase difference of π / 4 to generate a rotating uniform electric field; by controlling the parameters of the frequency and phase of the AC voltages of the eight independently spaced arc-shaped plates of the first electrode assembly 10 and the third electrode assembly 30, the screening of ion beam cluster size is achieved.

[0054] By controlling the AC voltage frequency of the eight independent arc-shaped plates of the first electrode assembly 10 and the third electrode assembly 30, the ion beam has the same flight time in the first electrode assembly 10 and the third electrode assembly 30, which is equal to one cycle of the AC voltage.

[0055] Figure 4 shows the distribution of equipotential lines in the cross section at different phase times (t1 and t2) of the octet electric field system, as shown in A and B. Observing the direction of the equipotential lines in the central region, it can be seen that the main direction of the electric field vector in A (i.e., the normal direction of the equipotential line gradient) roughly unfolds along [lower right to upper left]; while in B, this characteristic direction undergoes a significant clockwise deflection, pointing towards [lower left to upper right]. The equipotential lines are spaced at the same distance, proving that the generated electric field is uniform. This spatial phase shift of the equipotential line distribution with time intuitively confirms that under the excitation of an AC voltage of π / 4, a uniform rotating electric field vector that rotates continuously with time is formed in the central region. The trajectory of the ion within it is derived as follows.

[0056] The first electrode assembly 10 is subjected to a sinusoidal alternating voltage. As shown in Figure 5, the following relationship is satisfied:

[0057]

[0058] The third electrode assembly 30 is synchronously applied with a sinusoidal AC voltage. As shown in Figure 6, the following relationship is satisfied:

[0059]

[0060] in, Indicates voltage amplitude. Indicates voltage frequency. Indicates phase difference;

[0061]

[0062]

[0063] T is the AC voltage period, L is the length of the arc-shaped electrode, Vacc is the accelerating voltage before the ion beam enters the composite electrode structure, m / z is the mass-to-nucleus ratio of the target cluster size to be screened, d is the distance from the exit of the first electrode assembly to the inlet of the third electrode assembly, and θ is the phase compensation of the third electrode assembly. To control the frequency of the rotating electric field.

[0064] By controlling the frequency of the sinusoidal AC voltage Controlling the frequency of the rotating electric field The flight time of the target-sized cluster is exactly one period T.

[0065] A rectangular coordinate system is constructed based on the composite electrode structure, with the z-direction as the axial direction and the x and y directions as the radial directions. The equations of motion in the x, y, and z directions are:

[0066]

[0067] Where m is the mass of the ion beam cluster, q is the charge of the ion beam, and E is the electric field. Integrating the equation of motion, we can obtain that the trajectory of the ion is similar to a cycloid in the xy plane:

[0068]

[0069] Since the mass-to-nucleus ratio of the target-size cluster has a flight time of exactly one period in the rotating electric field, the formula... All are equal to 0, that is, the velocity components in the x and y directions are 0, which can satisfy the condition that the target screening cluster flies out from the inlet of the second electrode assembly along the parallel axis in the z direction, enters the zero field drift region to make horizontal linear motion, enters the third electrode assembly and after phase compensation, it is exactly one cycle of the reverse voltage applied, that is, the phase difference is π, so that the target screening cluster returns to the axis center.

[0070] The screening simulation process is shown in Figure 7. The green line represents the target size cluster, the red line represents the central axis, and the blue line represents clusters of other sizes. It can be seen that only the clusters near the target size of the green line returned to the center of the axis, thus achieving the screening of the target size cluster.

[0071] Meanwhile, since the second electrode assembly 20 is grounded, a "zero-field shielding zone" is constructed, which significantly reduces the axial extension of the rotating electric field and greatly reduces the influence of the edge field on the ion trajectory. As shown in Figure 8, when the second electrode assembly 20 is not grounded, the first electrode assembly 10 and the third electrode assembly 30 will extend axially and influence each other. Ions will not move horizontally in the zero-field drift zone and will not be affected by the electric field. As shown in Figure 9, when the second electrode assembly 20 is grounded, a shielding electrode is formed, which can weaken the mutual influence between the first electrode assembly 10 and the third electrode assembly 30, weaken the axial extension of the edge field, and enable the ion beam to fly in a straight line without the interference of the electric field in the zero-field shielding zone.

[0072] For example, the amplitude V of the rotating electric field voltage applied to the first electrode assembly 10 and the third electrode assembly 30 in this application is 2000-6000V, and the screening frequency is... 160kHz-300kHz, can filter size range Ar 300 -Ar 1500 Ar 300 This represents a cluster of 300 Ar atoms, Ar 1500 This represents a cluster of 1500 Ar atoms.

[0073] In some embodiments, in the ion beam focusing and shaping mode, the eight independently spaced arc-shaped plates of the first electrode assembly 10 are short-circuited and grounded at the same potential; a DC high voltage is applied to the second electrode assembly 20 to construct an electrostatic lens field; the eight independently spaced arc-shaped plates of the third electrode assembly 30 are short-circuited and grounded at the same potential; the focusing and shaping of the ion beam is achieved by controlling the voltage parameters of the second electrode assembly 20.

[0074] All eight independent plates of the first electrode assembly 10 and the third electrode assembly 30 are short-circuited to ground. The second electrode assembly 20 is connected to a high voltage to obtain the electric field structure of the electrostatic lens. By controlling the voltage of the second electrode assembly 20, the size and position of the converging beam spot can be controlled. For example, the voltage of the second electrode assembly 20 is 300V-500V.

[0075] As shown in Figure 10, when DC voltages of 330V, 350V, 380V, 400V, and 440V are applied to the second electrode assembly 20, the position or focal length of the focused spot (minimum spot) of the ion beam is different. The higher the voltage, the closer the focused spot is to the exit end of the third electrode assembly 30.

[0076] As shown in Figure 11, it can be seen that at a distance of 30mm from the outlet end of the third electrode assembly 30 (as shown by the dashed line MN in Figure 10), the beam spot diameter changes significantly with the voltage; the higher the voltage, the smaller the beam spot diameter.

[0077] This application utilizes a central cylindrical electrode to achieve the dual functionality of "edge field shielding" and "lens center electrode." In cluster size screening mode, the cylindrical electrode is grounded to construct a "zero-field drift region," significantly reducing the axial extension of the rotating electric field and eliminating the deflection of ion trajectories by the edge electric field, ensuring that ions maintain linear motion within the "zero-field drift region," consistent with theoretical model calculations. In ion beam focusing and shaping mode, the cylindrical electrode is connected to a high voltage, directly serving as the central high-voltage electrode of the electrostatic lens, thus satisfying the requirements of two physical fields through a single structure.

[0078] This application transforms the octagonal structure used to generate a rotating electric field into a "quasi-cylindrical electrode" for an electrostatic lens through potential control. In cluster-size mode, the cylindrical octagonal structure is used to generate a uniform rotating electric field; in ion beam focusing and shaping mode, all eight independent plates are grounded, making them electrically equivalent to the external cylindrical electrodes required for an electrostatic lens, thus constructing a standard electrostatic lens field without the need for additional components.

[0079] Based on the electrostatic lens field formed by the aforementioned reuse structure, this application's electrode structure can continuously change the half-width of the ion beam removal function by adjusting the voltage of the intermediate cylindrical electrode, thus solving the problem of large beam loss and inability to change the beam diameter in real time caused by the traditional physical aperture method.

[0080] Compared to the open-type rotating electric field structure in the prior art, this application utilizes the shielding effect of the central cylinder to ensure that cluster ions strictly follow a linear trajectory during the drift segment. This not only guarantees a high degree of agreement between the screening process and the theoretical calculation model, but also leverages the high-quality resolution of the device in screening mode to meet the process parameter control of cluster size in the gas ion beam ultra-smooth processing technology.

[0081] This application also provides an ion optical device, including an ion beam control device based on a composite electrode structure as described in any of the above claims.

[0082] Ion optics are installed at the ion source emitter to control the characteristics of the ion beam. Their main function is to control the emission aperture, spatial distribution, divergence angle, and initial energy dispersion of the ion beam, thereby optimizing the beam quality and meeting the requirements of subsequent transmission and processing technologies for ion beam collimation, focusing ability, and current uniformity.

[0083] This application adopts an axially distributed octagonal-cylindrical composite electrode structure, which realizes dual-mode in-situ reuse of ion beam focusing and shaping and gas ion beam cluster size screening within a single structure. This solves the problem of simultaneously meeting the functional requirements of two different processes in the same processing equipment, and improves the overall integrity and integration of the ion beam processing equipment.

[0084] This application utilizes a central conductive cylindrical electrode to achieve dual functionality of zero-field shielding and a high-voltage electrode at the center of the lens. In focusing mode, the central electrode is connected to a high voltage to construct the electric field structure of the electrostatic lens, thereby achieving the convergence and shaping of the ion beam. In cluster size screening mode, the central electrode is grounded to form a zero-field drift region, effectively isolating the axial extension of the rotating electric field and eliminating the influence of the edge field, further improving the quality resolution of cluster size screening and the space utilization of the electrode structure.

[0085] This application achieves functional reuse of the octagonal structure between the rotating electric field and the lens quasi-cylindrical electrode through a potential control strategy. In screening mode, a multiphase AC voltage is applied to synthesize a uniform rotating electric field, and in focusing mode, an axisymmetric electrostatic field is constructed by equipotential short-circuiting grounding. The physical field requirements of both types can be met without introducing additional components, further improving the structural compactness and geometric symmetry of the electric field distribution.

[0086] The electrode structure provided in this application combines ion beam focusing and shaping capabilities with quality resolution and screening capabilities, and can be widely used in high-end analytical instruments and ultra-precision surface processing.

[0087] Finally, it should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the systems or apparatus disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.

[0088] The above embodiments are only used to illustrate the technical solutions disclosed in this application, and are not intended to limit them. Although the disclosure of this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments disclosed in this application.

Claims

1. An ion beam control device based on a composite electrode structure, characterized in that: include: A composite electrode structure includes a first electrode assembly, a second electrode assembly, and a third electrode assembly arranged coaxially along the ion beam transmission direction, with an insulating gap between the first, second, and third electrode assemblies. The first electrode assembly consists of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference. The second electrode assembly is a hollow conductive cylindrical electrode, and the third electrode assembly consists of eight independently spaced arc-shaped electrode plates evenly distributed along the circumference. A power control module is configured to switch the voltage applied to the composite electrode structure between an ion beam cluster size screening mode and an ion beam focusing and shaping mode to achieve the functions of ion beam cluster size screening or ion beam focusing and shaping.

2. The ion beam control device according to claim 1, characterized in that, In the ion beam cluster size screening mode, the eight independently spaced arc-shaped plates of the first electrode assembly are sequentially subjected to multiphase AC voltages with a phase difference of π / 4 to generate a rotating uniform electric field; the second electrode assembly is grounded to construct a zero-field shielding region; the eight independently spaced arc-shaped plates of the third electrode assembly are sequentially subjected to multiphase AC voltages with a phase difference of π / 4 to generate a rotating uniform electric field; by controlling the parameters of the frequency and phase of the AC voltages of the eight independently spaced arc-shaped plates of the first and third electrode assemblies, the ion beam cluster size screening is achieved.

3. The ion beam control device according to claim 2, characterized in that, By controlling the AC voltage frequency of the eight independent arc-shaped plates of the first electrode assembly and the third electrode assembly, the flight time of cluster ions of the target size is the same in the first electrode assembly and the third electrode assembly and is equal to one cycle of the AC voltage.

4. The ion beam control device according to claim 1, characterized in that, In the ion beam focusing and shaping mode, the eight independently spaced arc-shaped plates of the first electrode assembly are shorted at the same potential and grounded; a DC high voltage is applied to the second electrode assembly to construct an electrostatic lens field; the eight independently spaced arc-shaped plates of the third electrode assembly are shorted at the same potential and grounded; the focusing and shaping of the ion beam is achieved by controlling the voltage parameters of the second electrode assembly.

5. The ion beam control device according to claim 1, characterized in that, The angular interval between the eight independently spaced arc-shaped plates of the first electrode assembly and the third electrode assembly is 2-8°.

6. The ion beam control device according to claim 1, characterized in that, The insulation gap is 1-5mm.

7. The ion beam control device according to claim 1, characterized in that, The length of the first electrode assembly and the third electrode assembly is 40-100mm, the inner diameter is 15-25mm, and the outer diameter is 20-30mm.

8. The ion beam control device according to claim 1, characterized in that, The second electrode assembly has a length of 20-60 mm, an inner diameter of 10-40 mm, and an outer diameter of 40-60 mm.

9. The ion beam control device according to claim 2, characterized in that, The AC voltage amplitude is 2000-6000V.

10. An ion optical device, characterized in that, Including the ion beam control device based on a composite electrode structure as described in any one of claims 1-9.

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