Semiconductor process apparatus and semiconductor processing method using the same

Abstract

Disclosed are a semiconductor process apparatus and a semiconductor processing method using the same. The disclosed semiconductor process apparatus is used for processing a semiconductor processing object, and may include: a chamber device in which a carrier for loading a substrate including the semiconductor processing object is disposed, and a laser light transmission window member through which laser light can be transmitted is provided at an upper end portion, a pressure regulator that is connected to a gas supply unit for supplying ambient gas and a gas discharge unit for discharging gas, and that is capable of regulating the internal pressure between a relatively low first pressure and a relatively high second pressure; and a laser irradiation module configured to irradiate laser light from outside of the chamber apparatus to the substrate loaded on the carrier through the laser transmission window member. The chamber device may comprise: a chamber body part in which the carrier is disposed; and a chamber guide part which can be opened and closed with respect to the chamber main body part, and which is provided with the laser light transmission window member.

Description

Technical Field

[0001] This invention relates to semiconductor-related equipment and methods, and more specifically, to semiconductor process equipment using lasers and semiconductor processing methods utilizing the same. Background Technology

[0002] Semiconductor devices / electronic devices are typically fabricated through multiple processes, including thin film deposition, photolithography, etching, ion implantation, and heat treatment (i.e., annealing). Heat treatment refers to processes that improve and ensure device characteristics by stabilizing, activating, melting, or removing seam defects within the substrate or the thin film formed on it.

[0003] In semiconductor heat treatment processes, conventional furnaces or buried-blade high-pressure equipment can be used. However, in these cases, it is difficult to control the temperature and precisely heat localized areas, leading to potential damage or degradation of the devices. Furthermore, existing heat treatment equipment presents challenges beyond simply adjusting pressure and using multiple gases; it also makes it difficult to control the reaction through pressure control.

[0004] On the other hand, when fabricating next-generation semiconductor / electronic devices, laser-based thermal processing can prevent device degradation by minimizing thermal load and improve and / or modify physical properties in the desired direction. Furthermore, it allows for precise, rapid, and uniform thermal processing across the entire substrate, making it a highly promising technology. Consequently, there is a particular need to develop semiconductor processing equipment with excellent performance and control characteristics suitable for fabricating next-generation semiconductor / electronic devices. Specifically, there is a need to develop semiconductor processing equipment that not only utilizes lasers as an energy source but also simplifies pressure control, supports various gases, and is applicable to multiple processes, while ensuring both process convenience and reliability, as well as speed and precision. Summary of the Invention

[0005] Technical issues

[0006] The technical objective of this invention is to provide a semiconductor process apparatus that not only uses laser as an energy source, but also allows for easy adjustment of reactivity (reaction rate) through pressure control between low and high pressures and the application of various gases.

[0007] Furthermore, the technical objective of this invention is to provide semiconductor process equipment that can ensure both process convenience and process reliability while simultaneously ensuring speed and precision during the semiconductor process.

[0008] Furthermore, the technical objective of this invention is to provide a semiconductor processing method utilizing the aforementioned semiconductor process equipment.

[0009] The objectives of this invention are not limited to those mentioned above. Those skilled in the art can understand other objectives not mentioned through the following description.

[0010] Technical solution

[0011] An embodiment of the present invention provides a semiconductor processing apparatus for processing semiconductor processing objects. The semiconductor processing apparatus includes: a chamber device having a carrier for loading a substrate including the semiconductor processing object, a laser transmission window member provided at the upper end for transmitting laser light, and connected to a gas supply unit for supplying ambient gas and an exhaust unit for exhausting gas, and capable of adjusting the internal pressure between a relatively low first pressure and a relatively high second pressure; and a laser irradiation module for irradiating laser light, such that the laser light irradiates the substrate loaded on the carrier from outside the chamber device via the laser transmission window member.

[0012] The aforementioned chamber device may include: a chamber body portion, on which the aforementioned carrier is disposed; and a chamber guide portion (lidpart), which is capable of opening and closing relative to the aforementioned chamber body portion and is provided with the aforementioned laser transmission window component.

[0013] The aforementioned chamber guide can be combined with the aforementioned chamber body via a hinge component, allowing the hinge component's shaft to be used as a rotation axis to rotate the chamber guide, thereby opening and closing the chamber guide relative to the aforementioned chamber body.

[0014] The aforementioned chamber guide portion can be completely separated from the aforementioned chamber body portion.

[0015] The aforementioned semiconductor process equipment may further include an air supply unit connected to the aforementioned chamber device to blow gas toward the interior of the aforementioned chamber device.

[0016] The aforementioned semiconductor process equipment may further include a chamber heating component disposed on the outer surface of the aforementioned chamber device for heating the aforementioned chamber device.

[0017] A slot valve that can be opened and closed may also be provided on the side of the aforementioned chamber device, allowing the aforementioned substrate to enter and exit.

[0018] The aforementioned carrier may include a heating element for heating the aforementioned substrate.

[0019] The heating element described above can heat the substrate to a temperature ranging from room temperature to 550°C.

[0020] The aforementioned laser transmission window component may contain quartz.

[0021] With the positions of the aforementioned chamber device and the aforementioned carrier fixed, the aforementioned laser irradiation module can be moved and irradiated with the aforementioned laser.

[0022] The aforementioned chamber device may have dimensions that allow the position of the aforementioned carrier inside it to move. With the positions of the aforementioned chamber device and the aforementioned laser irradiation module fixed, the aforementioned carrier can be moved inside the aforementioned chamber device and the aforementioned laser can be irradiated.

[0023] The aforementioned chamber device may also include an openable and closable intermediate slot valve, which is used to divide the process area and the substrate loading and unloading area.

[0024] The laser irradiation module may include a laser scanner and an optical system unit. The laser may be generated by a laser generator and transmitted to the laser scanner through the optical system unit.

[0025] The internal pressure of the aforementioned chamber device can be adjusted between 0.0001 atm and 100 atm.

[0026] The surrounding gas may include inert gas.

[0027] The aforementioned ambient gas may include a reactive gas, which may include at least one of hydrogen (H2), deuterium (D2), ammonia (NH3), fluorine (F), chlorine (Cl), bromine (Br) and iodine (I).

[0028] The aforementioned semiconductor process equipment can anneal the aforementioned substrate using the aforementioned laser.

[0029] The aforementioned semiconductor process equipment can perform a cleaning process on the aforementioned substrate.

[0030] The aforementioned semiconductor process equipment can perform an etching process on the aforementioned substrate.

[0031] The effects of the invention

[0032] The semiconductor process equipment and related technologies / methods implemented in the embodiments of the present invention have the following effects: not only can lasers be used as an energy source, but also the reactivity (reaction rate) can be easily adjusted by pressure control between low and high pressures, and various gases can be applied.

[0033] Furthermore, the semiconductor process equipment and related technologies / methods implemented in the embodiments of the present invention can ensure both process convenience and process reliability while simultaneously ensuring speed and precision during the semiconductor process.

[0034] When using the semiconductor process equipment of the present invention, devices with high integration and excellent performance (e.g., next-generation semiconductor devices) can be easily fabricated.

[0035] However, the effects of the present invention are not limited to the above-described effects, and various extensions can be made without departing from the technical concept of the present invention. Attached Figure Description

[0036] Figure 1 This is a cross-sectional view illustrating a chamber device applicable to semiconductor process equipment according to an embodiment of the present invention.

[0037] Figure 2 This is a cross-sectional view illustrating a chamber device applicable to semiconductor process equipment according to another embodiment of the present invention.

[0038] Figure 3 This is a cross-sectional view illustrating a chamber device applicable to semiconductor process equipment according to another embodiment of the present invention.

[0039] Figure 4 This is a cross-sectional view of a semiconductor process apparatus used to illustrate an embodiment of the present invention.

[0040] Figure 5 This is a cross-sectional view of a semiconductor process apparatus used to illustrate another embodiment of the present invention.

[0041] Figure 6 This is a cross-sectional view of a semiconductor process apparatus used to illustrate another embodiment of the present invention. Detailed Implementation

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0043] The embodiments of the present invention described below are for illustrative purposes only, so that those skilled in the art can further understand the present invention. The scope of the present invention is not limited to the following embodiments, and the following embodiments can be modified into many different implementations.

[0044] In this specification, the terminology used is for illustrative purposes only and is not intended to limit the invention. Unless the context clearly indicates otherwise, singular terms used herein include plural terms. Furthermore, the terms "comprise" and / or "comprising" as used herein are used to specify the presence of mentioned shapes, steps, numbers, operations, components, structural elements, and / or combinations thereof, and do not preclude the presence or additional possibility of more than one other shape, step, number, operation, component, structural element, and / or combination thereof. Moreover, the term "connected" as used herein not only means that components are directly connected, but can also include the concept that other components are indirectly connected between components.

[0045] Furthermore, in this specification, "when a component is located "on" other components" includes not only the case where one component is in contact with another component, but also the case where other components exist between the two components. In this specification, the term "and / or" includes one or more of the corresponding listed items and all combinations thereof. Also, in this specification, terms indicating degree such as "about," "whole," etc., are used to represent a range or approximation of the numerical or degree range of the material, taking into account the inherent permissible errors in the preparation of the substance. The precise or absolute values ​​provided in this application are intended to facilitate understanding and to prevent infringers from improperly using the disclosed content.

[0046] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. To ensure clarity and ease of explanation, the dimensions or thicknesses of areas or components shown in the drawings may be enlarged. Throughout this specification, the same reference numerals denote the same structural elements.

[0047] Figure 1 This is a cross-sectional view illustrating a chamber device 100A applicable to semiconductor process equipment according to an embodiment of the present invention.

[0048] Reference Figure 1 According to one embodiment of the present invention, a semiconductor process apparatus refers to an apparatus for processing semiconductor processing objects. The semiconductor processing object may include a substrate component or substrate structure or wafer component or wafer structure applied in a semiconductor process. For example, the semiconductor processing object may include a substrate component or wafer component on which semiconductor devices or electronic devices such as transistors, contacts, capacitors, memory cell arrays, pixel arrays, diodes, or driving circuits are formed. The term "semiconductor processing object" can be interpreted broadly.

[0049] Within the chamber device 100A, a susceptor 10 may be configured for loading (placing) the substrate S1, which includes the aforementioned semiconductor processing object. The susceptor 10 may be referred to as a platform. For example, the substrate S1 may be a wafer structure. The substrate S1 may include a semiconductor, an insulator, or a conductor. The substrate S1 may include at least one of a semiconductor, an insulator, and a conductor. Furthermore, the substrate S1 may include a predetermined thin film formed on the wafer or a device portion including the thin film. As a non-limiting example, when the substrate S1 includes a semiconductor wafer, the semiconductor wafer may include at least one of a variety of semiconductor materials composed of silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), etc. The thin film may include at least one of a semiconductor thin film, an insulating thin film, and a conductive thin film. The semiconductor thin film may include amorphous silicon, polycrystalline silicon, and other semiconductor materials. The aforementioned insulating film may comprise silicon oxide, silicon nitride, silicon nitride oxide, or a high-k material with a dielectric constant greater than that of silicon nitride. For example, the aforementioned conductive film may comprise at least one of a metal or a metal compound. As a non-limiting example, the aforementioned device portion may include switching components such as transistors or diodes, or storage nodes, or storage components such as capacitors or resistance-changing layers.

[0050] A laser transmission window component 20 capable of transmitting laser light (laser beam) may be provided at the upper end of the chamber device 100A. The laser transmission window component 20 may be disposed within the upper cover portion of the chamber device 100A. The laser transmission window component 20 may be disposed between the interior and exterior of the chamber device 100A. This allows the laser light to pass through the laser transmission window component 20 from the exterior of the chamber device 100A and irradiate the substrate S1 inside the chamber device 100A. As a non-limiting example, the laser transmission window component 20 may comprise quartz. In this case, the laser transmission window component 20 may comprise a quartz plate, and depending on requirements, may also include a coating formed on at least one side of the quartz plate. However, the material and structure of the laser transmission window component 20 are not limited thereto and may vary depending on the circumstances. For example, the laser transmittance of the laser transmission window component 20 may be approximately 80% or more, or approximately 90% or more.

[0051] The chamber device 100A can be connected to a gas supply unit 30 for supplying ambient gas and an exhaust unit 40 for exhausting gas. The chamber device 100A may have a closed chamber structure, allowing for adjustable internal pressure. The internal pressure of the chamber device 100A can be adjusted between a relatively low first pressure (relatively low pressure) and a relatively high second pressure (relatively high pressure). Therefore, the chamber device 100A can be a device capable of performing both high-pressure and low-pressure processes. As a specific example, the internal pressure of the chamber device 100A can be adjusted between approximately 0.0001 atm and 100 atm. In this case, 0.0001 atm may correspond to the aforementioned first pressure (low pressure), and 100 atm may correspond to the aforementioned second pressure (high pressure). However, the range of the internal pressure is not limited to this and may vary depending on the circumstances.

[0052] According to one embodiment, the ambient gas supplied to the chamber device 100A may include at least one of an inert gas and a reactive gas. For example, the inert gas may include at least one selected from the group consisting of He, Ne, Ar, N2, Kr, Xe, etc. For example, the reactive gas may include at least one selected from the group consisting of H2, D2, NH3, F, Cl, Br, I, etc. The reactive gas may be a toxic gas. When the chamber device 100A is used for laser annealing, in addition to the inert gas, the reactive gas can be used as the ambient gas, and the reaction rate can be easily adjusted by setting high-pressure conditions and low-pressure conditions.

[0053] According to one embodiment, a flow regulator 35 may be disposed between the chamber device 100A and the gas supply unit 30 for regulating the flow rate of the supplied gas. The flow regulator 35 may be a mass flow controller (MFC). Furthermore, according to another embodiment, an exhaust regulating valve 45 may be disposed between the chamber device 100A and the exhaust unit 40 for regulating the exhaust volume. By using the flow regulator 35 and the exhaust regulating valve 45, the process can be precisely controlled during gas supply and exhaust. The internal pressure of the chamber device 100A can be regulated using the exhaust regulating valve 45. On the other hand, the exhaust gas discharged through the exhaust unit 40 can be injected into a designated gas cylinder (bombe), that is, it can be injected into a gas container (e.g., a bottle). The aforementioned gas cylinder may be the same as the gas cylinder initially supplied with gas, or it may be a different gas cylinder.

[0054] According to an embodiment of the present invention, the chamber device 100A may include: a chamber body portion 110a, on which a carrier 10 is disposed; and a chamber guide portion 120a, which is openable and closable relative to the chamber body portion 110a and is provided with a laser transmission window component 20. The chamber body portion 110a may have an open upper portion, and the chamber guide portion 120a may be openable and closable relative to the open upper portion (i.e., opening) of the chamber body portion 110a.

[0055] According to one embodiment, the chamber guide 120a can be connected to the chamber body 110a via a hinge component (not shown), allowing the chamber guide 120a to be opened and closed relative to the chamber body 110a by using the axis of the hinge component as a rotation axis. Multiple fastening units (not shown) may also be provided to fasten the chamber guide 120a and the chamber body 110a together when the chamber guide 120a is closed to the chamber body 110a. As a non-limiting example, the multiple fastening units may be fastened with bolts. Furthermore, a sealing component (not shown) may be provided to ensure airtightness between the chamber guide 120a and the chamber body 110a.

[0056] With the chamber guide 120a open relative to the chamber body 110a, the operation of moving the substrate S1 between the inside and outside of the chamber device 100A or other prescribed operations related to the chamber device 100A can be performed. By rotating the chamber guide 120a using the aforementioned hinge member, the opening and closing process of the chamber guide 120a can be simplified, as can the management of the chamber device 100A.

[0057] According to one embodiment, an air supply unit 50 may be included, connected to the chamber device 100A. The air supply unit 50 can perform the function of blowing a predetermined gas into the interior of the chamber device 100A. The air supply unit 50 can be used to assist in the internal pressure regulation of the chamber device 100A, or, when venting, it can facilitate the discharge of residual gas or residue. Furthermore, the air supply unit 50 can also be used to appropriately create the internal gas atmosphere of the chamber device 100A.

[0058] The carrier 10 may include a heating element for heating the substrate S1. The carrier 10 may be a substrate heater or include a substrate heater. The heating element can heat the substrate S1 to a temperature ranging from room temperature (approximately 25°C) to approximately 550°C. However, the heating temperature of the substrate S1 by the heating element is not limited to this and may vary depending on the circumstances. The carrier 10 can fix the substrate S1 to its upper surface by using a negative pressure adsorption method, an electrostatic method, or a combination thereof. However, the embodiments of the present invention are not limited to this, and at least a portion of the carrier 10 may be made of a metallic material.

[0059] Figure 2 This is a cross-sectional view illustrating a chamber device 100B applicable to semiconductor process equipment according to another embodiment of the present invention.

[0060] Reference Figure 2 The chamber device 100B of this embodiment may include: a chamber body portion 110b, on which a carrier 10 is disposed; and a chamber guide portion 120b, which is openable and closable relative to the chamber body portion 110b and is provided with a laser transmission window component 20. The chamber body portion 110b may have an open upper portion structure, and the chamber guide portion 120b may be openable and closable relative to the open upper portion (i.e., opening) of the chamber body portion 110b. According to this embodiment, the chamber guide portion 120b can be completely separated relative to the chamber body portion 110b. In this case, the chamber guide portion 120b can be separated from the chamber body portion 110b by moving the chamber guide portion 120b in the upper direction of the chamber body portion 110b. A plurality of fastening units (not shown) may also be provided to fasten the chamber guide portion 120b and the chamber body portion 110b when the chamber guide portion 120b is closed to the chamber body portion 110b. As a non-limiting example, the aforementioned multiple fastening units can be fastened using bolts. Furthermore, a sealing component (not shown) may be provided to ensure airtightness between the chamber guide 120b and the chamber body 110b. With the chamber guide 120b open, operations such as moving the substrate S1 between the inside and outside of the chamber device 100B or performing other prescribed operations related to the chamber device 100B can be performed.

[0061] exist Figure 2 In addition to the structures of the chamber guide portion 120b and the chamber body portion 110b, the remaining structures can be integrated with... Figure 1 The descriptions are identical or similar. Therefore, to the extent that they do not contradict each other, Figure 1 The content of the explanation can also be applied to Figure 2 Examples of implementations.

[0062] Figure 3 This is a cross-sectional view illustrating a chamber device 100A' applicable to semiconductor process equipment according to another embodiment of the present invention.

[0063] Reference Figure 3 The chamber device 100A' of this embodiment may further include a chamber heating component 60 disposed on its outer surface. The chamber heating component 60 may be a heater for heating the chamber device 100A'. The chamber heating component 60 may cover at least a portion of the outer surface of the chamber body portion 110a and at least a portion of the outer surface of the chamber guide portion 120a. The internal temperature of the chamber device 100A' can be further easily adjusted by the chamber heating component 60. The chamber heating component 60 may be a heating jacket. While the chamber heating component 60 is shown being applied to… Figure 1 The case of chamber device 100A is similar, but it can also be applied to the same situation. Figure 2 The chamber device 100B.

[0064] exist Figures 1 to 3 In this process, the chamber dimensions of chamber devices 100A, 100B, and 100A' can be enlarged as needed to allow for the repositioning of the carrier 10 within the chamber devices 100A, 100B, and 100A'.

[0065] Figure 4 This is a cross-sectional view of a semiconductor process apparatus used to illustrate an embodiment of the present invention.

[0066] Reference Figure 4 The semiconductor process equipment of this embodiment can be an apparatus for processing semiconductor processing objects. The semiconductor process equipment is equipped with a carrier 10 for loading a substrate S1 including the semiconductor processing object, and a laser transmission window member 20 capable of transmitting laser L1 is provided at its upper end. It is connected to a gas supply section 30 for supplying ambient gas and an exhaust section 40 for exhausting gas. It may include a chamber device 100A capable of adjusting the internal pressure between a relatively low first pressure and a relatively high second pressure. The chamber device 100A may have the same characteristics as the referenced... Figures 1 to 3 The descriptions are identical or similar in structure. As an example, Figure 1 The chamber device 100A can be applied to Figure 3 Examples of implementations.

[0067] Furthermore, the aforementioned semiconductor process equipment may include a laser irradiation module 200A for irradiating laser L1, such that laser L1 irradiates the substrate S1 mounted on the carrier 10 from outside the chamber device 100A via a laser transmission window component 20. The laser irradiation module 200A may include a laser scanner 210a and an optical system unit 220a. Laser L1 may be generated by a laser generator 150 and transmitted to the laser scanner 210a via the optical system unit 220a, and may irradiate the substrate S1 from the laser scanner 210a. The optical system unit 220a may include an optical device that can be referred to as a "laser head," through which laser L1 may be transmitted to the laser scanner 210a.

[0068] As a non-limiting example, the laser generator 150 can be a diode laser generator, a carbon dioxide (CO2) laser generator, an Nd:YAG laser generator, or a fiber laser generator. In this case, for example, the laser generated by the laser generator 150 can have a wavelength of approximately 0.01 μm to 11 μm, and the type of laser generator 150 can be appropriately selected according to the desired wavelength range. For example, the laser scanner 210a may include a polygon mirror inside, which can reflect the laser introduced by the polygon mirror at various angles. The polygon mirror can rotate at a predetermined speed, and the laser irradiation position can change with the rotation of the polygon mirror. As described above, when the laser irradiation position is adjusted by rotating the polygon mirror, the scanning speed can be significantly increased. As a non-limiting example, the laser scanner 210a can scan semiconductor processing objects (wafers) with diameters of 150 mm, 200 mm, 300 mm, or 450 mm.

[0069] According to this embodiment, with the positions of the chamber device 100A and the carrier 10 fixed, the semiconductor process equipment can irradiate the laser L1 while moving the laser irradiation module 200A. In other words, the laser scanner 210a can move along the X-axis and / or Y-axis, and can perform a process of irradiating the laser L1 towards all areas (the entire effective area) of the substrate S1 while moving the laser scanner 210a along the X-axis and / or Y-axis. The laser scanner 210a can move along the X-axis, Y-axis, and Z-axis.

[0070] On the other hand, the positions of the chamber device 100A and the carrier 10 can be fixed. With the position of the chamber device 100A fixed, it is not only easy to connect gas pipelines, etc., but also a significant advantage in terms of equipment stability can be obtained.

[0071] According to one embodiment, a slot valve 70 that can be opened and closed may also be provided on the side (side surface) of the chamber device 100A, allowing the substrate S1 to enter and exit. The slot valve 70 can be a type of valve. The substrate S1 can be loaded onto the carrier 10 or removed from the carrier 10 by opening the slot valve 70. The position and size of the slot valve 70 can be appropriately selected.

[0072] According to one embodiment, a chamber device 100A and a laser irradiation module 200A can be configured within a defined process module 1000. The chamber device 100A can be fixedly disposed in a defined portion of the process module 1000. An orifice valve 70 can be configured to open and close via a defined wall surface of the process module 1000. Furthermore, an interface module 2000 adjacent to the process module 1000 and at least one loading port 3000 adjacent to the interface module 2000 can also be configured. The interface module 2000 can be located between the process module 1000 and the loading module 3000. The interface module 2000 can be an equipment front-end module (EFEM), and the loading port 3000 can be a load port module (LPM). As the loading port 3000 moves between the chamber device 100A of the process module 1000, a substrate S1, including a semiconductor processing object, can be loaded and unloaded. Although not shown in the figure, a robot arm for moving the substrate S1 may also be provided.

[0073] The semiconductor process equipment of this embodiment of the invention can anneal the substrate S1 using a laser L1. Therefore, the semiconductor process equipment described above can be a laser annealing equipment. In this case, the semiconductor processing method using the above-described semiconductor process equipment, i.e., the laser annealing method, may include the following steps: preparing a semiconductor device section (a substrate structure), providing a transistor in the semiconductor device section, the transistor including a semiconductor and a dielectric forming a bonding interface with the semiconductor; and performing laser annealing by irradiating the semiconductor device section with a laser under a pressure condition higher than 1 atm using at least one gas atmosphere selected from D2 (deuterium), H2 (hydrogen), and NH3 (ammonia) to at least passivate the interface charges between the semiconductor and the dielectric. The pressure adjustment can be a condition greater than 1 atm and less than 100 atm, and the laser annealing can be performed on the substrate on which the transistor is formed by adjusting the temperature within the range of room temperature to 550°C. The semiconductor includes the channel of the transistor, and the dielectric may include the gate dielectric layer of the transistor.

[0074] As an example, by performing the heat treatment process through the aforementioned laser annealing, the elements of the gas can form Si-D bonds or Si-H bonds at and around the interface between the semiconductor (channel) and the dielectric (gate dielectric layer), thereby deactivating (i.e., passivating) the interface charges generated based on dangling bonds. In this case, in addition to the interface charges, fixed charges present around the interface can also be deactivated (passivated) through a similar principle. Therefore, by improving the interface characteristics between the semiconductor (channel) and the dielectric (gate dielectric layer) and the physical properties of the dielectric (gate dielectric layer), the performance, stability, and reliability of the transistor device can be improved.

[0075] In particular, when deuterium is used in the aforementioned gas atmosphere, the stability and reliability of transistor devices can be significantly improved because the bond energy between deuterium and semiconductors such as silicon is higher than that of hydrogen. For example, since breaking Si-D bonds requires more energy than breaking Si-H bonds, using deuterium is more effective in reducing the trap energy levels at the bonding interface and performing passivation processes. Based on this, it is preferable that the aforementioned laser annealing be performed in a D2 (deuterium) gas atmosphere. The laser annealing can be performed in a 100% D2 (deuterium) gas atmosphere, or in a gas atmosphere comprising about 10% or more, or about 40% or more, of D2 (deuterium). However, in addition to D2 (deuterium) gas, other gases, such as H2 (hydrogen) gas or NH3 (ammonia) gas, may be used depending on the circumstances.

[0076] In the aforementioned laser annealing, the pressure formed within the chamber device can be greater than 1 atm. For example, the pressure can be greater than 1 atm and less than 100 atm. During the laser annealing process, by creating relatively high pressure conditions, the elements of the aforementioned gas (passivation gas) can be further effectively bonded to semiconductor elements such as silicon. That is, by using relatively high pressure conditions, the elements of the aforementioned gas (passivation gas) and semiconductor elements such as silicon can be further effectively bonded to the interface between the semiconductor (channel) and the dielectric (gate dielectric layer) and the surrounding area.

[0077] When using the semiconductor process equipment of the present invention, not only can the pressure of the chamber device be easily controlled, but also a variety of ambient gases can be easily applied. Furthermore, since the temperature can be easily controlled, the reaction rate (reactivity) can be easily controlled and the annealing characteristics can be improved during the application of the laser annealing method.

[0078] The aforementioned laser annealing can raise the temperature of the surface portion of the semiconductor device to approximately 600°C to 2000°C. Because of the use of laser L1, the temperature of the surface portion of the semiconductor device can be raised to a considerably high temperature in a short time, allowing for efficient and easy execution of the aforementioned passivation heat treatment process. In particular, the instantaneous heating generated by laser irradiation and the promotion of element penetration and bonding under pressure conditions enable efficient and effective execution of processes for deactivating interface charges and fixed charges in a short time.

[0079] Furthermore, under low-pressure conditions, the semiconductor process equipment of this embodiment can also be applied to laser annealing, which uses laser-based activation energy to initiate reactions while suppressing reactivity. Moreover, under high or low pressure conditions, apart from inert gases (He, Ne, Ar, N2, Kr, Xe, etc.), the semiconductor process equipment of this embodiment can easily use reactive gases (H2, D2, NH3, F, Cl, Br, I, etc.) as ambient gases, thus making it effectively applicable to a variety of fields.

[0080] When the substrate S1 comprises a semiconductor film (semiconductor thin film) or an insulating film (insulator thin film), annealing using laser L1 can also alter the crystallinity, physical properties, or film quality of the aforementioned semiconductor film or insulating film. As a non-limiting example, annealing using laser L1 can be used for the crystallization of amorphous silicon, removal of defects such as seams within thin films, activation of doped regions, or stabilization of wafers and thin films. Furthermore, annealing using laser L1 can be used for a variety of other purposes.

[0081] In existing semiconductor heat treatment processes, conventional furnaces or buried-blade high-pressure equipment can be used. However, in these cases, it is difficult to control the temperature and precisely heat localized areas, leading to potential device damage or degradation. Furthermore, existing heat treatment equipment presents challenges beyond pressure regulation and the application of multiple gases; it also makes it difficult to control the reaction through pressure control. However, according to embodiments of the present invention, laser light can be used as an energy source, and reactivity (reaction rate) can be easily adjusted through pressure control between low and high pressures. This enables the application of various gases in semiconductor processing equipment and semiconductor processing methods. Moreover, according to embodiments of the present invention, semiconductor processing equipment and semiconductor processing methods that ensure both process convenience and reliability while maintaining speed and precision can be realized.

[0082] Additionally, besides the laser annealing process described above, the semiconductor process equipment of the embodiment can also be used for the cleaning process or the etching process of the substrate S1. Furthermore, the semiconductor process equipment described above can be applied to various semiconductor process fields.

[0083] Figure 5 This is a cross-sectional view of a semiconductor process apparatus used to illustrate another embodiment of the present invention.

[0084] Reference Figure 5 The semiconductor process equipment of this embodiment may include a chamber device 100C. The chamber device 100C has a reference Figures 1 to 3 The similar structure described may have an enlarged dimension (enlarged dimension) that allows the carrier 10 to move within its interior. In other words, the chamber device 100C may have an internal space that expands horizontally, within which the carrier 10, on which the substrate S1 is disposed, can move horizontally. The inner diameter of the chamber device 100C may be approximately twice or more the diameter of the carrier 10. The chamber device 100C may include: a chamber body portion 110c, on which the carrier 10 is disposed; and a chamber guide portion 120c, which is openable and closable relative to the chamber body portion 110c and is provided with a laser transmission window component 20. The remaining structure of the chamber device 100C may be similar to... Figure 1 The descriptions are identical or similar. Therefore, to the extent that they do not contradict each other, Figure 1 The content of the explanation can also be applied to Figure 5 Examples of implementations.

[0085] Furthermore, the aforementioned semiconductor process equipment may include a laser irradiation module 200B for irradiating laser L1, such that laser L1 irradiates the substrate S1 mounted on the carrier 10 from outside the chamber device 100C via a laser transmission window component 20. The laser irradiation module 200B may include a laser scanner 210b and an optical system unit 220b. Laser L1 may be generated from a laser generator 150 and transmitted to the laser scanner 210b via the optical system unit 220b, and may irradiate the substrate S1 from the laser scanner 210b.

[0086] Additionally, the chamber device 100C of this embodiment may also include a position moving member 80 for moving the position of the carrier 10. As a non-limiting example, the position moving member 80 may include a bellows structure. However, the specific structure of the position moving member 80 is not limited to a bellows structure and various modifications are possible. The carrier 10 may move horizontally within the chamber device 100C. The carrier 10 may move along the X-axis and / or Y-axis.

[0087] According to an embodiment of the present invention, with the positions of the chamber device 100C and the laser irradiation module 200B fixed, the aforementioned semiconductor process equipment can irradiate the laser L1 while moving the carrier 10 inside the chamber device 100C. In other words, the carrier 10 can move along the X-axis and / or Y-axis, enabling the execution of a process in which the laser L1 is irradiated toward all areas (the entire effective area) of the substrate S1 while moving the carrier 10 along the X-axis and / or Y-axis. On the other hand, the positions of the laser irradiation module 200B and the chamber device 100C can be fixed. When the position of the chamber device 100C is fixed, it is not only easier to connect gas lines, etc., but also provides significant advantages in terms of equipment stability.

[0088] Figure 6 This is a cross-sectional view of a semiconductor process apparatus used to illustrate another embodiment of the present invention.

[0089] Reference Figure 6 In this embodiment, the chamber device 100C' of the semiconductor process equipment may further include an openable and closable intermediate slot valve 90 for dividing the process area R1 and the substrate loading / unloading area R2. The interior of the chamber device 100C' can be physically / spatially separated into the process area R1 and the substrate loading / unloading area R2 by the intermediate slot valve 90. In addition to the additional feature of the intermediate slot valve 90, the chamber device 100C' can be combined with... Figure 5 The chamber device 100C is the same as or similar to that of the chamber device 100C. Furthermore, in addition to the feature of including an intermediate orifice valve 90, the chamber device 100C' also includes... Figure 6 Semiconductor process equipment can be combined with Figure 5 The semiconductor process equipment is the same as or similar to that shown in the figure. The dimensions of the process area R1 are for illustrative purposes only and may be larger than those shown in the figure.

[0090] After opening the intermediate orifice valve 90 and moving the carrier 10 to the process area R1, the intermediate orifice valve 90 is closed. Then, after a gas atmosphere and pressure conditions are formed within the process area R1, the process of moving the carrier 10 and irradiating the entire effective area of ​​the substrate S1 with laser L1 can be performed. Although not in Figure 6 As shown, however, a position moving component (second position moving component) may also be provided for moving the position of the carrier 10 within the process area R1. The positions of the laser irradiation module 200B and the chamber device 100C can be fixed.

[0091] like Figure 6 As shown, when the intermediate orifice valve 90 is used to divide the process area R1 and the substrate loading / unloading area R2, the effects of significantly reducing gas consumption and shortening process time can be achieved.

[0092] exist Figures 4 to 6 In the embodiments described, although the application of a chamber device with a specific structure is primarily illustrated, however, as shown in reference... Figures 1 to 3 As described in the description, the above-mentioned chamber device can be adapted in various ways.

[0093] The semiconductor process equipment described in the above embodiments performs laser scanning using a raster scan method, or alternatively, a vector scan method. Furthermore, the semiconductor process equipment described in the above embodiments can anneal the substrate S1 using laser L1. Alternatively, the semiconductor process equipment described in the above embodiments can perform cleaning or etching processes on the substrate S1. In addition, the semiconductor process equipment described in the above embodiments can be applied to various process fields.

[0094] According to the embodiments of the present invention described above, lasers can be used as an energy source, and reactivity (reaction rate) can be easily adjusted by pressure control between low and high pressures, enabling semiconductor process equipment and semiconductor processing methods that can utilize various gases. Furthermore, according to embodiments of the present invention, semiconductor process equipment and related technologies / methods that ensure both process convenience and process reliability while maintaining speed and precision can be realized. When utilizing the semiconductor process equipment described in the embodiments of the present invention, devices with high integration and excellent performance (e.g., next-generation semiconductor devices) can be easily fabricated.

[0095] This specification discloses preferred embodiments of the present invention. Although specific terminology is used, it is for general purposes only to facilitate the explanation and understanding of the technical content of the invention and is not intended to limit the scope of the invention. In addition to the embodiments disclosed herein, other modifications based on the technical concept of the invention can be implemented by those skilled in the art. It should be understood that those skilled in the art can make modifications to the references without departing from the technical concept of the invention. Figures 1 to 6 The semiconductor process apparatus and semiconductor processing method described herein can be subjected to various substitutions, modifications, and variations. Therefore, the scope of the present invention is not limited to the embodiments described herein, but should be defined based on the technical concept described in the claims.

[0096] Industrial availability

[0097] The embodiments of the present invention can be applied to semiconductor-related equipment and methods. The embodiments of the present invention can be applied to semiconductor process equipment using lasers and semiconductor processing methods utilizing them.

Claims

1. A semiconductor processing apparatus for processing semiconductor processing objects, characterized in that, include: The chamber assembly includes a carrier for loading a substrate comprising the aforementioned semiconductor processing object, a laser transmission window member at its upper end capable of transmitting laser light, and is connected to a gas supply unit for supplying ambient gas and an exhaust unit for exhausting gas. It is capable of adjusting the internal pressure between a relatively low first pressure and a relatively high second pressure. A laser irradiation module is used to irradiate a laser, such that the laser light is irradiated from the outside of the cavity device through the laser transmission window component onto the substrate mounted on the carrier.

2. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned chamber device includes: The chamber body is equipped with the aforementioned carrier; and The chamber guide section is capable of opening and closing relative to the chamber body section and is provided with the laser transmission window component.

3. The semiconductor process equipment according to claim 2, characterized in that, The aforementioned chamber guide is connected to the aforementioned chamber body via a hinge component. The hinge component's shaft is used as a rotation axis to rotate the chamber guide, thereby opening and closing the chamber guide relative to the chamber body.

4. The semiconductor process equipment according to claim 2, characterized in that, The aforementioned chamber guide portion can be completely separated from the aforementioned chamber body portion.

5. The semiconductor process equipment according to claim 1, characterized in that, It also includes an air supply unit connected to the aforementioned chamber device to blow gas toward the interior of the aforementioned chamber device.

6. The semiconductor process equipment according to claim 1, characterized in that, It also includes a chamber heating component disposed on the outer surface of the chamber device for heating the chamber device.

7. The semiconductor process equipment according to claim 1, characterized in that, A closable orifice valve is also provided on the side of the aforementioned chamber device, allowing the aforementioned substrate to enter and exit.

8. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned carrier includes a heating section for heating the aforementioned substrate.

9. The semiconductor process equipment according to claim 8, characterized in that, The heating element heats the substrate to a temperature ranging from room temperature to 550°C.

10. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned laser transmission window component contains quartz.

11. The semiconductor process equipment according to claim 1, characterized in that, With the positions of the aforementioned chamber device and the aforementioned carrier fixed, the aforementioned laser irradiation module is moved and irradiated with the aforementioned laser.

12. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned chamber device has dimensions that allow the position of the aforementioned carrier within it to move. With the positions of the aforementioned chamber device and the aforementioned laser irradiation module fixed, the aforementioned carrier is moved inside the aforementioned chamber device and irradiated with the aforementioned laser.

13. The semiconductor process equipment according to claim 12, characterized in that, The aforementioned chamber device also includes an openable and closable intermediate orifice valve inside, which is used to divide the process area and the substrate loading and unloading area.

14. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned laser irradiation module includes a laser scanner and an optical system unit. The laser is generated by the laser generator and transmitted to the laser scanner through the optical system unit.

15. The semiconductor process equipment according to claim 1, characterized in that, The internal pressure of the aforementioned chamber device is adjustable between 0.0001 atm and 100 atm.

16. The semiconductor process equipment according to claim 1, characterized in that, The surrounding gases mentioned above include inert gases.

17. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned surrounding gases include reactive gases. The aforementioned reactant gases include at least one of hydrogen, deuterium, ammonia, fluorine, chlorine, bromine, and iodine.

18. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned semiconductor process equipment uses the aforementioned laser to anneal the aforementioned substrate.

19. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned semiconductor process equipment performs a cleaning process on the aforementioned substrate.

20. The semiconductor process equipment according to claim 1, characterized in that, The aforementioned semiconductor process equipment performs an etching process on the aforementioned substrate.

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