Uniform gas structure for chamber circumferential gas inlet and semiconductor processing equipment thereof

Abstract

The application discloses a uniform gas distribution structure for circumferential gas inlet of a chamber and a semiconductor processing device. The uniform gas distribution structure is arranged in a semiconductor processing device and used for conveying reaction gas to a reaction chamber of the semiconductor processing device. The uniform gas distribution structure comprises an outer ring flow guide layer and an inner ring uniform gas distribution layer. The outer ring flow guide layer is in gas communication with at least one gas inlet. The inner ring uniform gas distribution layer is arranged with a seamless annular gas outlet in gas communication with the reaction chamber. The application can realize uniform gas distribution in the circumferential direction of the reaction chamber by arranging the uniform gas distribution structure inside the reaction chamber.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a gas uniform structure and its semiconductor processing equipment. Background Technology

[0002] Semiconductor processing equipment requires the input of reactive gases to deposit insulating or metallic thin films. Some semiconductor processing equipment requires side-inlet devices to compensate for or regulate the uniformity of the gas intake. In traditional side-inlet structures, there is an acute angle (typically 30°-60°) between the gas inlet axis and the central axis of the reaction chamber. According to the Navier-Stokes equations and computational fluid dynamics (CFD) simulations, this angle causes the incident gas to generate a Kármán vortex street near the boundary layer on the inner wall of the chamber, forming an asymmetric spiral flow pattern. This turbulent disturbance results in a circumferential concentration gradient standard deviation ΔC > 15%, directly affecting the uniformity of the deposition rate (Uniformity CV > 5%). While existing mechanical structures (such as guide vanes) can partially constrain the airflow direction, rotating airflow is difficult to suppress with simple mechanical structures; a balance must be struck between airflow diffusion and direction control. Simultaneously, traditional solutions struggle to achieve a uniform annular distribution at the outlet end face while maintaining low turbulence. This results in uneven gas distribution in the circumferential direction inside the reaction chamber, thus affecting the uniformity of the deposited film. In addition, the gas flow rates in different radial directions cannot be controlled independently, making it impossible to effectively adjust the processing technology. Summary of the Invention

[0003] The purpose of this invention is to provide a uniform airflow structure 100 that adapts to flow resistance and progressively guides airflow, thereby solving the problems of airflow rotation and uneven distribution caused by lateral air intake. Another purpose of this invention is to provide a semiconductor processing device including the aforementioned uniform airflow structure 100.

[0004] To solve the above-mentioned technical problems, the present invention provides a gas-uniform structure 100 for circumferential gas intake in a chamber, which is disposed in a semiconductor processing device for supplying reaction gas to the reaction chamber of the semiconductor processing device. The gas-uniform structure 100 includes:

[0005] The outer ring guiding layer 10 and the inner ring gas equalization layer 20 are provided. The outer ring guiding layer 10 is connected to at least three gas inlets and is used to guide and diffuse the gas introduced by the gas inlets in an annular manner.

[0006] The inner ring gas uniform layer 20 is provided with a seamless annular gas outlet that communicates with the gas in the reaction chamber.

[0007] The outer ring guiding layer 10 and the inner ring gas equalization layer 20 are in gas communication.

[0008] A plurality of air inlet blocks 30 are provided between the outer ring guide layer 10 and the inner ring gas equalization layer 20, and a plurality of gas flow channels are formed between adjacent air inlet blocks 30. The gas flow channels are used to realize gas communication between the outer ring guide layer 10 and the inner ring gas equalization layer 20.

[0009] In one embodiment, the outer ring guide layer 10 includes a plurality of damping units, each of which can be disposed on the sidewall of the intake block 30.

[0010] In one embodiment, the air inlet is distributed at an angle θ1 with the outer ring guide layer to ensure tangential air intake, wherein 45°<θ1<90°.

[0011] In one embodiment, the inner ring gas uniform layer 20 includes a plurality of gas channels with circumferentially increasing cross-sectional area, the shape of which can be adaptively adjusted according to the shape, position, and tilt angle of the air inlet block 30.

[0012] In one embodiment, the air intake block 30 is a plurality of triangular prisms arranged in an array, and the gas flow channel is formed between adjacent triangular prisms. The cross-sectional area of ​​the gas flow channel increases circumferentially, specifically, the cross-sectional area of ​​the flow channel is triangular.

[0013] In one embodiment, the air intake block 30 is a plurality of semi-meniscus structures arranged in an array, and adjacent semi-meniscus structures form a gas flow channel. The cross-sectional area of ​​the gas flow channel also increases along the circumference. Specifically, the cross-sectional area of ​​the flow channel is curved.

[0014] In one embodiment, a rotating baffle 80 is provided to precisely adjust the intake resistance.

[0015] In one embodiment, at least three air inlets are provided around the air distribution structure 100.

[0016] In one embodiment, the air distribution structure 100 can be rotated, and its direction and speed are adjustable, such as clockwise or counterclockwise.

[0017] In one embodiment, each air inlet 40 is provided with a pneumatic component and a flow control component. The pneumatic component is used to control the flow of gas entering the gas equalization structure 100, and the flow control component is used to regulate the flow rate of the reaction gas entering the gas tank device.

[0018] In one embodiment, the air distribution structure 100 can be used in conjunction with a grid structure.

[0019] The present invention also provides a semiconductor processing apparatus, the semiconductor processing apparatus comprising a reaction chamber, the reaction chamber comprising a cylindrical reaction chamber sidewall and a top insulating window, and a uniform gas distribution structure 100 for circumferential air intake of the chamber is provided between the reaction chamber sidewall and the top insulating window.

[0020] Compared with existing technologies, the above technical solution has the following beneficial effects:

[0021] 1) The present invention eliminates the structural gap interference of traditional segmented flow guide by setting an outer ring guide layer 10 and an inner ring gas equalization layer 20 inside the reaction chamber, wherein the inner ring gas equalization layer 20 has a seamless annular gas outlet.

[0022] 2) After the intake air is adjusted by the damping unit of the outer ring guide layer 10, the vortex phenomenon is significantly reduced and the rotational component is decomposed into tangential flow.

[0023] 3) After the airflow enters the gas flow channel of the inner ring gas uniform layer 20, the circumferential pressure difference is compensated by gradually increasing the circumferential cross-sectional area of ​​the flow channel to achieve uniform flow velocity.

[0024] 4) The detachable air distribution structure 100 is easy to process, disassemble and maintain. Attached Figure Description

[0025] Appendix Figure 1-2 This is a schematic diagram of an embodiment 100 of a chamber circumferential air intake uniform air structure provided by the present invention.

[0026] Appendix Figure 3 This is a schematic diagram of a second embodiment of the uniform air intake structure 100 for circumferential air intake of a chamber provided by the present invention.

[0027] Appendix Figure 4 This is a schematic diagram of a third embodiment of the uniform air intake structure 100 for circumferential air intake of a chamber provided by the present invention.

[0028] Appendix Figure 5 This is a schematic diagram of a fourth embodiment of a uniform air intake structure 100 for circumferential air intake in a chamber provided by the present invention.

[0029] Appendix Figure 6 It is a simulated gas streamline diagram of a traditional side-intake device.

[0030] Appendix Figure 7 This is a simulated gas streamline diagram of Embodiment 1 of the present invention.

[0031] Appendix Figure 8 This is a gas cloud map of Embodiment 1 of the present invention in a gridless state.

[0032] Appendix Figure 9 This is a gas cloud map of Embodiment 1 of the present invention in the presence of a grid. Detailed Implementation

[0033] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0034] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. This application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. The embodiments of this application will be described in detail below.

[0035] Throughout this application, as used herein, the terms “approximately,” “substantially,” “substantially,” and “about” are used to describe and indicate small variations. When used in conjunction with an event or situation, the terms may refer to examples in which the event or situation occurred precisely and examples in which the event or situation occurred very approximately. For example, when used in conjunction with numerical values, the terms may refer to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the difference between two values ​​is less than or equal to ±10% of the average of the values ​​(e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%), then the two values ​​can be considered "substantially" the same. In this specification, unless specifically specified or limited, relative terms such as "central," "longitudinal," "lateral," "front," "rear," "right," "left," "inner," "outer," "lower," "higher," "horizontal," "vertical," "above," "below," "above," "below," "top," "bottom," and their derivatives (e.g., "horizontally," "downward," "upward," etc.) should be interpreted as referring to the directions described in the discussion or depicted in the figures. These relative terms are used for descriptive convenience only and do not require that this application be constructed or operated in a particular orientation.

[0036] Additionally, quantities, ratios, and other numerical values ​​are sometimes presented in range format throughout this document. It should be understood that this range format is for convenience and brevity and should be interpreted flexibly, encompassing not only numerical values ​​explicitly specified as range limits but also all individual numerical values ​​or subranges covered within the range, as if each numerical value and subrange were explicitly specified. Furthermore, for ease of description, terms such as "first," "second," "third," etc., may be used herein to distinguish different components of a figure or a series of figures. "First," "second," "third," etc., are not intended to describe the corresponding components.

[0037] In the embodiments of this application, unless otherwise specified or limited, the terms “set,” “connect,” “couple,” “fix,” and similar terms are used extensively, and those skilled in the art can understand the above terms as appropriate, such as fixed connection, detachable connection, or integrated connection; it can also be a mechanical connection or an electrical connection; it can also be a direct link or an indirect link through an intermediary structure; or it can be internal communication between two components.

[0038] The present invention provides a gas uniform structure 100 for circumferential air intake in a chamber, which is disposed in the reaction chamber of a semiconductor processing device to provide reaction gas from the side wall of the reaction chamber.

[0039] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] Please refer to the attached document. Figure 1 and 2 , attached Figure 1 and 2 This is a schematic diagram of the gas uniform structure 100 provided in Embodiment 1 of the present invention.

[0041] In Embodiment 1, the gas uniform structure 100 provided in this embodiment of the invention includes an outer ring guiding layer 10 and an inner ring gas uniform layer 20. The outer ring guiding layer 10 is connected to at least three gas inlets and is used to guide and diffuse the gas introduced by the gas inlets in an annular manner. The inner ring gas uniform layer 20 is provided with a seamless annular gas outlet and is connected to the gas in the reaction chamber.

[0042] Compared with the prior art, the gas uniformity structure 100 provided in this application embodiment has a circumferentially seamless annular gas outlet, which greatly increases the gas uniformity of the gas outlet.

[0043] Furthermore, the outer ring guiding layer 10 and the inner ring gas uniform layer 20 are in gas communication; a plurality of air inlet blocks 30 are provided between the outer ring guiding layer 10 and the inner ring gas uniform layer 20, and a plurality of gas flow channels are formed between adjacent air inlet blocks 30 to realize gas communication between the outer ring guiding layer 10 and the inner ring gas uniform layer 20, and the gas flow channels at the outlet end are merged into a continuous ring, thereby realizing the uniform diffusion and distribution of the reaction gas from the outer ring guiding layer 10 to the inner ring gas uniform layer 20.

[0044] Furthermore, the outer ring guide layer 10 includes multiple damping units for guiding the reactant gas from the gas supply device into the gas equalization structure 100. Each damping unit can be disposed on the side wall of the inlet block 30, wherein the end of the damping unit near the outer ring guide layer 10 is the inlet 40, and the end near the inner ring gas equalization layer 20 is the outlet. Therefore, the installation angle of the inlet block 30 can be adjusted to change the gas inlet direction, thereby decomposing the rotational component into tangential flow and reducing gas velocity loss. In practical applications, by adjusting the overall structural parameters of the damping unit (e.g., inlet diameter, inner wall roughness, inlet block tilt angle, at least one of these), the resistance of the damping unit can be adjusted to different values, thereby suppressing the rotational momentum of the reactant gas to varying degrees. For example, the multiple inlets are distributed at an angle θ1 with the outer ring guide layer to ensure tangential air intake, where 45° < θ1 < 90°. Figure 1-2 As shown, the air intake block 30 is composed of multiple arrayed triangular prisms, with adjacent prisms forming the gas flow channel. The end of the gas flow channel near the outer ring guide layer 10 is the air intake 40, and the end near the inner ring uniform gas layer 20 is the air outlet. The cross-sectional area of ​​the gas flow channel increases inwards circumferentially; specifically, the channel cross-sectional area is triangular, with an included angle of θ2, where 5° < θ2 < 20°. Furthermore, to ensure uniform air intake, the width and number of air intakes are adjusted to satisfy the formula W / D < 1 / 150, where W is the width of a single air intake and D is the outer ring diameter. At this point, the pressure difference between the air intake and the air outlet is ΔP, where ΔP ∝ 1 / N. 2 *A 2 , where N 2 A is the square of the number of air intakes. 2 It is the square of the air intake area, i.e., ΔP and N 2 A 2 The product is inversely proportional. In the embodiments of the present invention, the intake function can be realized when ΔP>0 is satisfied.

[0045] To further ensure uniform air intake, at least three air intake ends are provided around the air-uniforming structure 100. Each air intake end is equipped with a pneumatic component and a flow control component. The pneumatic component controls the on / off state of the gas entering the air-uniforming structure 100, and the flow control component regulates the flow rate of the reaction gas entering the air-uniforming structure 100. Therefore, the on / off state of the gas in the radial angle of the air intake end, as well as the gas flow rate and velocity, can be adjusted by the pneumatic component and the flow control component. In some embodiments, the air-uniforming structure 100 can also be rotated, with adjustable direction and speed, such as clockwise or counterclockwise.

[0046] Please refer to the attached document. Figure 3 , attached Figure 3 This is a schematic diagram of the gas uniform structure 100 provided in Embodiment 2 of the present invention.

[0047] In Embodiment 2, the gas distribution structure 100 provided by the present invention is an improvement based on Embodiment 1. Except for the structure of the damping unit, which differs from that in Embodiment 1, the rest of the structure is the same.

[0048] The outer ring guide layer 10 includes multiple damping units for guiding the reactant gas from the gas supply device into the gas equalization structure 100. Each damping unit can be disposed on the side wall of the inlet block 30, wherein the end of the damping unit near the outer ring guide layer 10 is the inlet 40, and the end near the inner ring gas equalization layer 20 is the outlet. In practical applications, by adjusting the overall structural parameters of the damping unit (e.g., at least one of the inlet 40 diameter, outlet diameter, inner wall roughness, and inlet block 30 tilt angle), the resistance of the damping unit can be adjusted to different values, thereby suppressing the rotational momentum of the reactant gas to varying degrees and achieving tangential flow. Figure 3 As shown, the air intake block 30 is a series of semi-lunar structures arranged in an array. Adjacent semi-lunar structures form gas flow channels. The cross-sectional area of ​​the gas flow channels also increases circumferentially. Specifically, the cross-sectional area of ​​the flow channels is curved. Compared with the technical solution with a triangular cross-sectional area, the wall of the semi-lunar structure has an arc shape, which can further reduce gas velocity loss and reduce the collision between gas and the wall. Similarly, the air outlet flow channel is integrated into a continuous ring, eliminating the structural gap interference of traditional segmented flow guide.

[0049] The structure of the gas flow channel can be set according to the shape of the air inlet block 30. The shape of the gas flow channel includes triangular prism, semi-crescent, gradually increasing spiral, etc., as long as the cross-sectional area of ​​the flow channel increases circumferentially. Preferably, it is set as a triangular prism flow channel to facilitate processing.

[0050] Please refer to the attached document. Figure 4 , attached Figure 4 This is a schematic diagram of the gas uniform structure 100 in Embodiment 3 of the present invention.

[0051] The gas-uniform structure 100 can be a single, integral, annular flow-guiding structure, meaning it is a single, non-removable unit. However, in Embodiment 3 of the present invention, the gas-uniform structure 100 can also be detachable, such as... Figure 4 As shown, the gas uniformity structure 100 can be divided into three parts: an annular cover plate 50, an air inlet block unit 60, and an annular base plate 70. The air inlet block unit 60 includes several air inlet blocks 30, which are disposed between the annular cover plate 50 and the annular base plate 70. Compared with other embodiments, this embodiment facilitates the processing, disassembly, and maintenance of the gas uniformity structure 100. In particular, the air inlet block unit 60 can be replaced with air inlet blocks 30 of different shapes according to actual application needs, and the number of air inlet blocks 30 can be adjusted arbitrarily to adjust the width of the air inlet 40 and the tilt angle of the damping unit, thereby changing the air inlet parameters (such as angle, flow rate, and flow rate) to meet the gas uniformity requirements under various application scenarios. At the same time, the air inlet blocks 30 at different positions in the reaction chamber will suffer varying degrees of damage after long-term corrosion. When the gas uniformity structure 100 is detachable, the air inlet blocks 30 with higher damage can be replaced in time, extending the overall service life without replacing the entire gas uniformity structure 100, saving costs and time.

[0052] In the above embodiments, in addition to facilitating the replacement of the severely corroded air intake block 30, the air intake block 30 can also be replaced with a target material to facilitate the treatment of the target material in subsequent processes.

[0053] Please refer to the attached document. Figure 5 , attached Figure 5 This is a schematic diagram of the gas-uniform structure 100 according to Embodiment 4 of the present invention. In this embodiment, the gas-uniform structure 100 provided by the present invention is an improvement based on Embodiment 1 described above.

[0054] The gas distribution structure 100 guides the reaction gas at the inlet end through the outer ring guide layer 10. Multiple inlets 40 are circumferentially formed on the outer wall of the outer ring guide layer 10. Rotary baffles 80 are rotatably connected to each of the multiple inlets 40, allowing for more precise adjustment of the inlet resistance. Users can adjust the gas inlet direction and flow rate by rotating the installation angle of the rotary baffles 80, thereby adjusting the gas transmission direction, changing the gas path direction, altering the gas direction, and adjusting the gas distribution within the reaction chamber to meet actual process requirements. Simultaneously, there is no need to redesign or modify parts and the overall structure, or to re-produce and install the gas. Simply rotating the rotary baffles 80 allows for rapid adjustment of the gas inlet direction and flow rate according to different gas types, making it convenient to use, cost-effective, and improving work efficiency. Furthermore, it facilitates multiple adjustments and uses, allowing for adjustments to the gas path direction based on each process condition, ensuring optimal results for every process operation.

[0055] Furthermore, in order to ensure that the rotating baffle 80 is in close contact with the outer ring guide layer 10, the shape of the rotating baffle 80 can be adjusted, including but not limited to an arc shape.

[0056] Appendix Figure 6 This is a simulation diagram of the gas velocity distribution in a traditional side-intake device. (Attached) Figure 7 This is a simulation diagram of the gas velocity distribution in Embodiment 1 of the present invention.

[0057] Reference Appendix Figure 6 In traditional side-inlet devices, there are at least three inlet ends. The gas inlet axis forms an acute angle (usually 30°-60°) with the central axis of the reaction chamber. This angle causes the incident gas to generate a Karman vortex street near the boundary layer on the inner wall of the chamber, forming an asymmetric spiral flow pattern. This turbulent disturbance results in a relatively large standard deviation of the concentration gradient of the reactant gas in the circumferential direction. At the same time, the gas velocity varies significantly at different circumferential positions in the chamber, with some areas having faster velocities and others having slower velocities. Alternatively, the gas pressure may be unevenly distributed in the circumferential direction, causing local pressures to be too high or too low. Therefore, the gas distribution is more concentrated in the outer ring area and less distributed at the outlet end face. This causes non-uniformity in the circumferential direction inside the reaction chamber, thus affecting the subsequent process effect.

[0058] Reference Appendix Figure 7In Embodiment 1 of the present invention, the side air intake device also has at least three air intake ends. At the same time, a gas equalization structure 100 is set inside the reaction chamber. The gas equalization structure 100 includes an outer ring guide layer 10 and an inner ring gas equalization layer 20. The outer ring guide layer 10 and the inner ring gas equalization layer 20 have connected gas flow channels, so that after the reaction gas is regulated by the damping unit of the outer ring guide layer 10, the rotational component of the gas is decomposed, the eddy current phenomenon in the outer ring region is significantly reduced, and the gas becomes tangential flow. After the reaction gas enters several arrayed gas flow channels with gradually increasing cross-sectional area, the circumferential pressure difference is compensated, and the reaction gas actively flows from the outer ring guide layer 10 to the inner ring gas equalization layer 20 region, thereby forming a seamless annular outlet at the outlet end face, realizing circumferential diffusion of the gas. Compared with the comparative example, the standard deviation of the concentration gradient of the reaction gas in the circumferential direction is smaller in this embodiment, realizing the homogenization of gas distribution in the 360° circumferential direction.

[0059] Appendix Figure 8 This is a gas cloud image of Embodiment 1 of the present invention in a gridless state. (Attached) Figure 9 This is a gas cloud map of Embodiment 1 of the present invention in the presence of a grid.

[0060] Reference Appendix Figure 8 In one embodiment of the present invention, a traditional exhaust structure is combined above the uniform gas structure. During exhaust operation, the gas distribution varies significantly, with the gas concentrated in the central area and dispersed in the peripheral area. The coefficient of variation (CV) is 22.6%, indicating that the fluid distribution within the chamber is extremely uneven during exhaust, which affects subsequent process performance. To ensure high circumferential gas uniformity during simultaneous intake and exhaust operations, the present invention also proposes a grid structure. By adjusting a series of parameters of the grid structure, such as aperture and aperture position, uniform exhaust can be achieved. (See attached...) Figure 9 It can be seen that the gas uniformity structure paired with the grille has a CV (coefficient of variation) of 7.1% in the exhaust state, which can maintain a high gas circumferential uniformity and will not disrupt the uniform gas distribution below the gas uniformity structure, which is beneficial to the subsequent process.

[0061] The present invention also provides a semiconductor processing apparatus, the semiconductor processing apparatus comprising a reaction chamber, the reaction chamber comprising a cylindrical reaction chamber sidewall and a top insulating window, wherein a uniform gas distribution structure 100 for circumferential air intake of the chamber is provided between the reaction chamber sidewall and the top insulating window, and in order to ensure uniform exhaust, the uniform gas distribution structure 100 can be used in conjunction with a grid structure, the specific parameters of the grid structure (e.g., number of holes, hole diameter, hole position, etc.) can be adaptively adjusted according to actual needs.

[0062] This invention sets up an outer ring guide layer 10 and an inner ring gas equalization layer 20 inside the reaction chamber. After the intake air is damped and adjusted by the outer ring guide layer 10, the rotational component is decomposed into tangential flow. With the gradual increase of the flow channel of the inner ring gas equalization layer 20, the flow channel at the outlet end merges into a continuous ring, and a uniform gas distribution is achieved in the 360° circumferential direction in the reaction chamber, eliminating the structural gap interference of traditional segmented guide flow.

[0063] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas-uniform structure for circumferential gas intake in a chamber, disposed within a semiconductor processing device, for supplying reactive gas to the reaction chamber of the semiconductor processing device, characterized in that, The gas-uniform structure includes: An outer ring guide layer, wherein the outer ring guide layer is in communication with at least three air inlets; An inner ring gas equalization layer is provided with a seamless annular gas outlet that communicates with the gas in the reaction chamber. Multiple air inlet blocks are provided between the outer ring guide layer and the inner ring uniform air layer. Multiple damping units are provided on the sidewalls of the multiple air inlet blocks. The end near the outer ring guide layer is the air inlet, and the end near the inner ring uniform air layer is the air outlet. Multiple gas flow channels are formed between adjacent air intake blocks, and the cross-sectional area of ​​the gas flow channels increases circumferentially.

2. The gas-uniform structure as described in claim 1, characterized in that, The air inlet is distributed at an angle θ1 to the circumferential tangent of the outer ring guide layer to ensure tangential air intake, where 45°<θ1<90°.

3. The gas-uniform structure as described in claim 1, characterized in that, The pressure difference between the inside and outside of the air inlet and the air outlet is ΔP, where ΔP>0.

4. The gas-uniform structure as described in claim 1, characterized in that, The outer ring guide layer is also equipped with a rotating baffle to adjust the intake resistance.

5. The gas-uniform structure as described in claim 1, characterized in that, The gas distribution structure can be either an integral, non-removable or detachable design.

6. The gas-uniform structure according to any one of claims 1-5, characterized in that, The air-uniform structure is used in conjunction with the grid structure.

7. The gas-uniform structure as described in claim 1, characterized in that, The shape of the gas flow channel includes any one of the following: incremental spiral, triangular prism, or crescent shape.

8. The gas-uniform structure as described in claim 1, characterized in that, The gas-uniform structure is rotated.

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