Terahertz blade type two-dimensional T / R assembly

The terahertz blade-type two-dimensional T/R module packaged using HTCC/micro-coaxial hybrid technology solves the problems of large size, heavy weight, and low integration of traditional terahertz brick-type phased array T/R modules, realizing half-wavelength arraying and efficient signal processing, and is suitable for terahertz communication and radar systems.

CN121584178APending Publication Date: 2026-02-2710TH RES INST OF CETC
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Patent Information

Application Number
CN202511728207.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-24
Publication Date
2026-02-27

AI Technical Summary

Technical Problem

Traditional terahertz brick-type phased array (T/R) components are large in size, heavy in weight, have low integration, are difficult to achieve half-wavelength arraying, and have high interconnection losses, low frequency conversion efficiency, and serious heat generation.

Method used

The terahertz blade-type two-dimensional T/R module, packaged using a hybrid HTCC/microcoaxial process, achieves chip packaging through HTCC technology, realizes the beamforming network and filter through microcoaxial technology, and combines microstrip line transition and gold-plated air waveguide to achieve low-loss and high-efficiency signal processing. It also achieves two-dimensional half-wavelength integration through blade stacking.

Benefits of technology

It realizes the half-wavelength array function of terahertz T/R components, supports large-angle scanning, and features a thin and light design, high integration, and low power consumption. It is suitable for terahertz communication and radar systems, with an operating frequency of ≤140GHz, noise figure of ≤6dB, phase shift number of 5bit, receive and transmit gain of ≥20dB, single-channel transmit power of ≥15dBm, and a wide range of applications, suitable for terahertz radar, communication terminals and detection systems.

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Abstract

The embodiment of the invention provides a terahertz blade type two-dimensional T / R assembly, and relates to the field of terahertz phased arrays, and the assembly is realized by adopting the following technology: firstly, a multi-layer high-temperature ceramic technology is adopted to realize blade type packaging of a multi-channel T / R assembly, and a single-layer chip is subjected to spreading type packaging on a light and thin HTCC substrate, so that the Terahertz blade type two-dimensional T / R assembly is obtained; the thinning of the terahertz phased array 1 * n multi-channel T / R assembly is realized; secondly, through a bunching network based on a terahertz micro-coaxial process, half-wavelength arrangement in a transverse dimension of 1 * n multi-channel is realized; and finally, the one-dimensional T / R array is expanded into a two-dimensional array through blade type superposition in the thickness direction. According to the invention, a two-dimensional half-wavelength distributed terahertz T / R assembly can be realized, the large-angle scanning capability of a terahertz phased-array antenna can be supported, and the terahertz T / R assembly can be easily connected with an end-on-fire antenna to be expanded into a phased-array complete machine. Meanwhile, the design adopts a modular superposition scheme, is good in maintainability, extensible, replaceable and easy in mass production, and has very strong engineering adaptability.
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Description

Technical Field

[0001] This application relates to the field of terahertz phased array technology, and more specifically, to a terahertz blade-type two-dimensional T / R module. Background Technology

[0002] Terahertz data link phased array T / R modules need to support large-angle scanning capabilities, requiring half-wavelength arraying with an element spacing of approximately 1.05mm (for the 140GHz band). Traditional terahertz brick-type phased array T / R modules are too thick, failing to meet the half-wavelength element spacing requirements of phased array antennas. Therefore, it is necessary to research blade-like brick-type phased array T / R module design schemes, ensuring that the thickness of the T / R module meets the engineering requirement of half-wavelength element spacing and possesses scalability. This technology can effectively support the application and promotion of terahertz phased array technology in radar, communication, electronic countermeasures, guidance, and fuse fields. In particular, it can be applied to swarm UAV equipment. The terahertz phased array T / R module in this design features miniaturization and high integration, suitable for installation and use on small UAV platforms.

[0003] Traditional terahertz brick-type phased array T / R modules employ a metal cavity integrated structure, resulting in large size, heavy weight, and insufficient integration, making it difficult to meet half-wavelength array requirements. Furthermore, traditional terahertz T / R modules suffer from high interconnection losses, low frequency conversion efficiency, and significant heat generation. Therefore, new processes and technologies are needed to achieve low-loss, high-efficiency, and highly integrated terahertz T / R modules. Summary of the Invention

[0004] The embodiments of this application provide a terahertz blade-type two-dimensional T / R component, which solves the problems of large size, heavy weight, low integration, and difficulty in achieving half-wavelength array in current terahertz T / R components.

[0005] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0006] According to a first aspect of the embodiments of this application, a terahertz blade-type two-dimensional T / R component is provided, with an operating frequency of 140GHz, comprising: a multi-layer stacked one-dimensional 1×n T / R component; The one-dimensional 1×n T / R component includes n transmit / receive channels, and implements the combining / power dividing function through a 1-to-n network to combine the received n signals or divide the transmitted signal into n channels, and a filter is set at the common end; Each transmit / receive channel includes: a low-noise amplifier / power amplifier, a phase shifter, and an attenuator; The one-dimensional 1×n T / R component is packaged using a hybrid HTCC / micro coaxial process; The one-dimensional 1×n T / R component integrates a beamforming network and a filter using micro-coaxial technology; The beamforming network is loaded at the front end of the one-dimensional 1×n T / R component, with one end connected to the one-dimensional 1×n T / R component and the other end connected to the antenna array. The antenna array is arranged with a spacing of half a wavelength at the end connected to the antenna.

[0007] In some embodiments of this application, based on the foregoing scheme, the one-dimensional 1×n T / R component includes: A multilayer HTCC substrate, wherein a mounting cavity is formed on the HTCC substrate; The low-noise amplifier / power amplifier, the phase shifter, and the attenuator are disposed in the mounting cavity; The low-noise amplifier / power amplifier, the phase shifter, and the attenuator are connected by a quartz microstrip line and interconnected by gold wire bonding. The mounting cavity is equipped with a metal cover and a metal frame for encapsulating all the devices.

[0008] In some embodiments of this application, based on the aforementioned scheme, an HTCC gold-plated cavity is used to achieve isolation between the transmit and receive channels, an internally gold-plated air waveguide is used to achieve a 1-to-n combining / power dividing network, and the transition between the air waveguide and the quartz microstrip line is in the form of a terahertz probe.

[0009] In some embodiments of this application, based on the aforementioned scheme, each pair of one-dimensional 1×n T / R components is stacked back-to-back to form an array, and multiple arrays are stacked to form the two-dimensional T / R component.

[0010] In some embodiments of this application, based on the foregoing scheme, a metal heat dissipation layer is provided between each array group; The metal heat dissipation layer is made of Alsi.

[0011] In some embodiments of this application, based on the aforementioned scheme, each array group is provided with a J63A DC interface, the intermediate frequency and intrinsic frequency adopt the SSMP interface form, and the radio frequency interface selects the WR6 waveguide port.

[0012] In some embodiments of this application, based on the foregoing scheme, the thickness of the one-dimensional 1×n T / R component is half a wavelength.

[0013] The technical solution of this application has the following beneficial effects: (1) The half-wavelength array function of the terahertz T / R module has been realized, which can support the large-angle scanning function of terahertz phased array. The terahertz data link phased array T / R module integration technology proposed in this project has the advantages of being lightweight, efficient, and scalable. It can be used in terahertz communication and radar systems with a working frequency of ≤140GHz, noise figure of ≤6dB, phase shift number of 5bit, receiving and transmitting gain of ≥20dB, single-channel transmitting power of ≥15dBm, and can support the scanning capability of terahertz phased array antenna of ±45°.

[0014] (2) High integration, small size, light weight, and low power consumption. This invention designs a terahertz blade-type two-dimensional T / R component with a channel spacing of less than λ / 2. It adopts a hybrid HTCC / microcoaxial process, using HTCC process to realize chip packaging and microcoaxial process to realize a thin and light clustering network and filter device. First, a one-dimensional thin and light 1×n scale half-wavelength integration is realized, and then a two-dimensional half-wavelength integrated array is realized through blade-type stacking.

[0015] (3) Wide range of applications. The terahertz blade-type two-dimensional T / R component proposed in this invention has strong engineering adaptability and can be adapted to various terahertz phased array large-angle scanning applications, including terahertz radar, terahertz radiation communication terminals and terahertz detection systems.

[0016] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0017] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings: Figure 1 A schematic diagram of the structure of a terahertz blade-type two-dimensional T / R component according to an embodiment of this application is shown; Figure 2 A back-to-back package cross-sectional view of a 2×n one-dimensional 1×n T / R assembly according to an embodiment of this application is shown. Detailed Implementation

[0018] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0019] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0020] The character " / " generally indicates that the objects before and after it are in an "or" relationship.

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0022] The following detailed description of some embodiments of this application will be provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0023] See Figure 1 The diagram shows a structural schematic of a terahertz blade-type two-dimensional T / R component according to an embodiment of this application.

[0024] like Figure 1 As shown, a terahertz blade-type two-dimensional T / R module is demonstrated, comprising: a multi-layer stacked one-dimensional 1×n T / R module; The one-dimensional 1×n T / R component includes n transmit / receive channels, and implements the combining / power dividing function through a 1-to-n network to combine the received n signals or divide the transmitted signal into n channels, and a filter is set at the common end; Each transmit / receive channel includes: a low-noise amplifier / power amplifier, a phase shifter, and an attenuator; The one-dimensional 1×n T / R component is packaged using a hybrid HTCC / micro coaxial process; The one-dimensional 1×n T / R component integrates a beamforming network and a filter using micro-coaxial technology; The beamforming network is loaded at the front end of the one-dimensional 1×n T / R component, with one end connected to the one-dimensional 1×n T / R component and the other end connected to the antenna array. The antenna array is arranged with a spacing of half a wavelength at the end connected to the antenna.

[0025] It should be noted that the entire array adopts a lightweight brick-like architecture, and uses a hybrid process of HTCC and micro coaxial to achieve multi-channel packaging and integration of T / R components, which mainly realizes the amplification, amplitude and phase control and filtering of signals from the antenna.

[0026] Taking a 1×n scale T / R component as an example, the chip is packaged using HTCC technology and the clustering network is realized using micro coaxial technology. First, the integration of a thin and lightweight 2×n scale half-wavelength T / R component is realized back to back. Then, a two-dimensional half-wavelength integrated array is realized through blade-like stacking.

[0027] It should be noted that in this embodiment, the amplifier section (low-noise amplifier / power amplifier) ​​mainly realizes the function of final stage power amplification output or front stage low-noise reception. The phase shifter and attenuator realize the amplitude and phase adjustment of the radio frequency signal to ensure the antenna beam scanning function is realized. The filter function is to suppress spurious harmonic interference and reduce self-excitation problems caused by component coupling. The combiner / power divider realizes the power synthesis / distribution of radio frequency signal.

[0028] It should be noted that, in this embodiment, to address the issues of circuit complexity and high power consumption inherent in existing terahertz phased array (T / R) module intermediate frequency (IF) phase shifting technology, a radio frequency (RF) phase shifting method based on a phase shifter is proposed. This reduces the need for local oscillator networks and mixers introduced by IF phase shifting, thereby lowering the circuit complexity and power consumption of the T / R module. The phase shifting technology achieves dynamic phase control of the millimeter-wave signal through an active vector synthesis module. A DA converter transforms the digital phase control signal into an analog signal, which then drives the phase shifting chip to modulate the phase, achieving a phase difference step accuracy of up to 5.625°. Furthermore, the phase can be statically / dynamically calibrated, and phase deviations are corrected using a digital compensation algorithm based on a preset phase error table (such as antenna element position errors and device parasitic effects). Each antenna element integrates an independent transmit / receive channel, supporting fully digital phase control.

[0029] In some feasible embodiments, based on the foregoing scheme, the one-dimensional 1×n T / R component includes: A multilayer HTCC substrate, wherein a mounting cavity is formed on the HTCC substrate; The low-noise amplifier / power amplifier, the phase shifter, and the attenuator are disposed in the mounting cavity; The low-noise amplifier / power amplifier, the phase shifter, and the attenuator are connected by a quartz microstrip line and interconnected by gold wire bonding. The mounting cavity is equipped with a metal cover and a metal frame for encapsulating all the devices.

[0030] like Figure 2As shown, each layer of one-dimensional 1×n T / R components uses multi-layer HTCC technology to achieve thin and light packaging of multi-channel T / R components. A cavity is cut out on the multi-layer HTCC substrate to package chips such as low-noise amplifiers / power amplifiers, phase shifters and attenuators. Quartz microstrip lines are set between the devices and the components, and they are bonded and interconnected by gold jumper wires. Then, the cavity is sealed by a metal cover plate and frame.

[0031] It should be noted that, in this embodiment, to improve electromagnetic interference and isolation issues in microwave circuits, an equivalent shielding structure and a ground plane layer can be added to the HTCC multilayer substrate. This reduces electromagnetic interference between devices and crosstalk between the transmitting and receiving branches in the assembly, thereby improving the overall reliability of the integrated circuit. Furthermore, using a high-temperature ceramic composite dielectric material with high dielectric constant and low loss tangent enables high-reliability, low-loss interconnection, high integration, high reliability, and low-cost performance in HTCC multilayer printed circuit boards.

[0032] In some feasible embodiments, based on the aforementioned scheme, an HTCC gold-plated cavity is used to achieve isolation between the transmit and receive channels, an internally gold-plated air waveguide is used to achieve a 1-to-n combining / power dividing network, and the transition between the air waveguide and the quartz microstrip line is in the form of a terahertz probe.

[0033] In some feasible embodiments, based on the aforementioned scheme, two layers of one-dimensional 1×n T / R components are stacked back-to-back to form an array, and multiple arrays are stacked to constitute the two-dimensional T / R component.

[0034] For example, in actual processing, a method of integrating a single-layer one-dimensional 1×n T / R component back-to-back into a 2×8 array is adopted, and then the 2×8 array is used to integrate T / R arrays of any required size. The thickness of a single-layer substrate is about 1.1mm.

[0035] In some feasible embodiments, based on the aforementioned scheme, a metal heat dissipation layer is provided between each array group; The metal heat dissipation layer is made of Alsi.

[0036] It should be noted that the metal heat dissipation layer can achieve grounding and heat dissipation functions, and the metal heat dissipation layer adopts an irregular structure, partially protruding, and is integrated with the HTCC substrate to increase the volume of the heat dissipation layer and reduce its thermal resistance; the HTCC substrate also uses a thermally conductive material to achieve insulation and heat dissipation.

[0037] For example, such as Figure 2 As shown, the upper 1×n T / R component and the lower 1×n T / R component belong to two adjacent arrays, and a heat dissipation metal layer is set between the upper and lower 1×n T / R components.

[0038] In some feasible embodiments, based on the aforementioned scheme, each array group is equipped with a J63A DC interface, the intermediate frequency and intrinsic frequency adopt the SSMP interface form, and the RF interface selects the WR6 waveguide port.

[0039] In some feasible embodiments, based on the foregoing scheme, the thickness of the one-dimensional 1×n T / R component is half a wavelength.

[0040] Understandably, in this application, a blade-packaged integration of a 1×n one-dimensional 1×n T / R component is achieved. By widening the width direction, the chip can be single-layered and installed, making the thickness of the 1×n one-dimensional 1×n T / R component half a wavelength. Furthermore, the array is expanded through blade stacking, transforming the one-dimensional array into a two-dimensional array. The 1×n one-dimensional 1×n T / R component maintains a half-wavelength array in the width direction by integrating a one-dimensional focusing network. Ultimately, a two-dimensional terahertz T / R array with a half-wavelength array is realized.

[0041] It should be noted that in this embodiment, a hybrid HTCC / microcoaxial process is used to realize the multi-channel HTCC / microcoaxial hybrid packaging of the terahertz T / R component. Based on low-loss chip interconnection, low-loss multi-channel ceramic integration of terahertz is achieved. The chip is packaged using the HTCC process, and the focusing network and filter are realized using the microcoaxial process.

[0042] The dominant mode propagated by microcoaxial transmission lines is quasi-TEM, which is easily matched with the dominant mode of microstrip line transmission. Furthermore, because the internal dielectric of microcoaxial transmission lines is air, the transmission loss of array antenna interconnects can be effectively reduced. Microcoaxial transmission lines fabricated using silicon-based photolithography possess the technical characteristics of high precision, small size, low loss, low mutual coupling, and high Q value, achieving excellent performance such as low loss, high isolation, ultra-wideband, and high power capacity, resulting in improvements in size, weight, and power capacity. The low insertion loss and wide bandwidth of microcoaxial structures provide a basis for realizing low-loss focusing networks for terahertz waves, which, combined with HTCC technology, can complete multi-channel HTCC / microcoaxial hybrid packaging of terahertz T / R components.

[0043] Moreover, the micro-coaxial process makes it easy to implement some end-fire antennas, which can be integrated with the beamforming network. This avoids the problem of antenna and T / R components and antenna interface docking, and achieves low-loss interconnection.

[0044] Because LC filters have poor rectangular coefficients and out-of-band rejection performance, and cavity filters are too large and difficult to integrate in a thinner form, filters based on microcoaxial technology are used. Microcoaxial filters have high Q values, high rectangular coefficients, and strong out-of-band rejection. Multilayer microcoaxial technology can be used to realize high-order filters, thereby achieving better out-of-band rejection capabilities. Among existing terahertz filters, the lowest loss and high isolation can be achieved.

[0045] Furthermore, the micro coaxial filter is easy to assemble, exhibits extremely high consistency in mass production, and supports SMT mounting and wire bonding packaging. During assembly, the filter is mounted on the structural component by applying silver paste around its perimeter. Its interface is easily connected to coplanar striplines, and it is mounted on the substrate using surface mounting or bonding methods.

[0046] Other embodiments of this application will readily conceive of by those skilled in the art upon consideration of the specification and practice of the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. It should be understood that this application is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A terahertz blade-type two-dimensional T / R module, operating at a frequency of 140 GHz, characterized in that, include: A multi-layered, stacked one-dimensional 1×n T / R component; The one-dimensional 1×n T / R component includes n transmit / receive channels, and implements the combining / power dividing function through a 1-to-n network to combine the received n signals or divide the transmitted signal into n channels, and a filter is set at the common end; Each transmit / receive channel includes: a low-noise amplifier / power amplifier, a phase shifter, and an attenuator; The one-dimensional 1×n T / R component is packaged using a hybrid HTCC / micro coaxial process; The one-dimensional 1×n T / R component integrates a beamforming network and a filter using micro-coaxial technology; The beamforming network is loaded at the front end of the one-dimensional 1×n T / R component, with one end connected to the one-dimensional 1×n T / R component and the other end connected to the antenna array. The antenna array is arranged with a spacing of half a wavelength at the end connected to the antenna.

2. The terahertz blade-type two-dimensional T / R assembly according to claim 1, characterized in that, The one-dimensional 1×n T / R component includes: A multilayer HTCC substrate, wherein a mounting cavity is formed on the HTCC substrate; The low-noise amplifier / power amplifier, the phase shifter, and the attenuator are disposed in the mounting cavity; The low-noise amplifier / power amplifier, the phase shifter, and the attenuator are connected by a quartz microstrip line and interconnected by gold wire bonding. The mounting cavity is equipped with a metal cover and a metal frame for encapsulating all the devices.

3. The terahertz blade-type two-dimensional T / R assembly according to claim 2, characterized in that, HTCC gold-plated cavity is used to achieve isolation between the transmit and receive channels. Internally gold-plated air waveguide is used to realize the 1-to-n combining / power dividing network. The transition between the air waveguide and the quartz microstrip line is in the form of a terahertz probe.

4. The terahertz blade-type two-dimensional T / R assembly according to claim 1, characterized in that, Each pair of one-dimensional 1×n T / R components is stacked back-to-back to form an array, and multiple arrays are stacked to form the two-dimensional T / R component.

5. The terahertz blade-type two-dimensional T / R assembly according to claim 4, characterized in that, A metal heat dissipation layer is provided between each array group; The metal heat dissipation layer is made of Alsi and adopts an outward convex structure to reduce thermal resistance, and is integrated with the HTCC substrate.

6. The terahertz blade-type two-dimensional T / R assembly according to claim 4, characterized in that, Each array is equipped with a J63A DC interface, the intermediate frequency and intrinsic frequency use SSMP interface, and the RF interface uses the WR6 waveguide port.

7. The terahertz blade-type two-dimensional T / R assembly according to claim 4, characterized in that, The thickness of the one-dimensional 1×n T / R component is half a wavelength.