Chip temperature protection method and circuit

Abstract

This invention discloses a chip temperature protection method and circuit, belonging to the field of chip design. To accurately determine whether the chip's operating state has reached a high-temperature threshold and an over-temperature threshold, the chip temperature protection method of this invention includes: generating a temperature-positively correlated current signal, a reference voltage signal, and a first voltage signal; changing the chip temperature and recording the temperature and voltage values ​​when the over-temperature indicator signal flips and the temperature and voltage values ​​when the high-temperature indicator signal flips; adjusting circuit parameters through a second encoded value so that the difference between the high-temperature and over-temperature voltage thresholds equals a target difference; obtaining the current chip temperature value and adjusting the DC component of the first voltage signal through the first encoded value so that its voltage value conforms to a specific formula; the high-temperature indicator signal is used to shut down some modules, and the over-temperature indicator signal is used to shut down the entire chip. This invention, applied in the chip field, has the advantage of a wide chip temperature protection threshold range.

Description

Technical Field

[0001] This invention relates to the field of chip design, and more specifically to a chip temperature protection method and circuit. Background Technology

[0002] In recent years, temperature has become a critical parameter in chip design. With the development of very large-scale integrated circuit (VLSI) technology, the feature size of Complementary Metal Oxide Semiconductor (CMOS) chips has continued to shrink, and integration density has continuously increased. This has led to a significant increase in integrated circuit power density and a corresponding decrease in system reliability. Therefore, the importance of on-chip temperature monitoring is growing daily. Increased temperature has a significant impact on the performance of components in CMOS processes, making the study of the effect of operating temperature changes on component performance of great significance.

[0003] During chip operation, temperature protection mechanisms are crucial. On one hand, when the chip's operating temperature reaches the high-temperature threshold, an indication signal needs to be triggered to control the chip to shut down some non-critical functions, thereby reducing power consumption, improving work efficiency, and achieving a cooling effect. On the other hand, when the chip temperature reaches the over-temperature threshold (greater than the high-temperature threshold), another indication signal needs to be issued to force the chip to shut down, thus preventing damage caused by the chip operating in an over-temperature state.

[0004] However, accurately determining whether the chip's operating state has reached the high temperature threshold and over-temperature threshold has become a pressing technical challenge in the current chip design field, especially in environments with large power or temperature differences. Summary of the Invention

[0005] To alleviate or partially alleviate the above-mentioned technical problems, the solution of the present invention is as follows:

[0006] A chip temperature protection method includes the following steps: generating a temperature-positively correlated current signal and a reference voltage signal; generating a temperature-positively correlated first voltage signal based on the temperature-positively correlated current signal;

[0007] Change the chip temperature and record the first recorded temperature value T1 and the first recorded voltage value V of the first voltage signal when the over-temperature indication signal flips. T1 The second recorded temperature value T2 and the second recorded voltage value V of the first voltage signal are recorded when the high temperature indicator signal flips. T2 ;

[0008] The circuit parameters are adjusted by the second encoded value to achieve the circuit's over-temperature voltage threshold V. ct and the high-temperature voltage threshold V of the circuit htThe voltage difference between them is equal to the target voltage difference ∆V' = (T ctc -T high )× (V T1 -V T2 ) / (T1 -T2), where T high It is the target high temperature threshold, T ctc It is the target over-temperature threshold, V ht It is the voltage threshold that triggers the high temperature indicator signal to flip, V ct It is the voltage threshold that triggers the over-temperature indication signal to flip;

[0009] Get the current temperature value T of the chip c The DC component of the first voltage signal is adjusted by the first encoding value, so that the voltage value of the first voltage signal is consistent with V. t =(T c -T2)×(V T1 -V T2 ) / (T1 -T2) + V T2 equal;

[0010] The high temperature indicator signal is a signal that indicates the shutdown of some functional modules of the chip; the over-temperature indicator signal is a signal that indicates the shutdown of the entire chip.

[0011] Furthermore, the first and second encoded values, which are ultimately applied to the chip, are applied to all chips of the same type produced in the same batch.

[0012] Furthermore, the high-temperature voltage threshold V of the circuit ht and the over-temperature voltage threshold V of the circuit ct It is obtained by voltage division of a reference voltage signal.

[0013] Furthermore, the chip outputs a temperature test signal through a pin, which is the same as the first voltage signal.

[0014] Furthermore, the chip is placed in a high-temperature test chamber, and the temperature of the chip is changed by continuously altering the temperature within the chamber.

[0015] Furthermore, both the first and second encoded values ​​are generated through digital encoding circuits.

[0016] Furthermore, the circuit is a temperature judgment and correction circuit; the temperature judgment and correction circuit outputs a high temperature indication signal, an over-temperature indication signal, and a temperature test signal.

[0017] Furthermore, the temperature judgment and correction circuit receives a reference voltage signal and a first voltage signal.

[0018] Furthermore, both the reference voltage signal and the first voltage signal are generated by the temperature detection and correction circuit.

[0019] Furthermore, the circuit parameters are adjusted using the second encoding value before the DC component of the first voltage signal is adjusted using the first encoding value.

[0020] On the other hand, a chip temperature protection circuit of the present invention includes a temperature detection and correction circuit, and a temperature judgment and correction circuit. In the first branch of the temperature detection and correction circuit, one end of a current source is connected to VDD, and the other end is connected to the first terminal of a first resistor. The second terminal of the first resistor is grounded, and the connection node between the current source and the first resistor serves as the output node of the first branch. In the second branch of the temperature detection and correction circuit, a reference voltage is connected to the first terminal of a first adjustable element, and the second terminal of the first adjustable element is connected to the first terminal of a second resistor. The second terminal of the second resistor is grounded, and the connection node between the first adjustable element and the second resistor serves as the output node of the second branch. The first adjustable element is controlled by a first encoded value. An adder converts the output voltage of the first branch... The voltage signals output by the output nodes of the first and second branches are used as inputs. In the temperature judgment and correction circuit, the output voltage of the adder is simultaneously input to the positive input terminals of the first and second comparators. The reference voltage is connected to the first terminal of the second adjustable element, the second terminal of the second adjustable element is connected to the first terminal of the third resistor and leads out to the first node, the second terminal of the third resistor is connected to the first terminal of the fourth resistor and leads out to the second node, the second terminal of the fourth resistor is grounded, and the second adjustable element is controlled by the second coded value. The negative input terminal of the first comparator is connected to the first node, and the output voltage of the first comparator is an over-temperature indication signal. The negative input terminal of the second comparator is connected to the second node, and the output voltage of the second comparator is a high-temperature indication signal.

[0021] The technical solution of this invention has one or more of the following beneficial technical effects:

[0022] (1) This invention can be applied to the adjustment of chip temperature protection in various processes, and the selection of target values ​​is more flexible.

[0023] (2) The temperature chamber test was specially introduced to make up for the adjustment deviation of the target voltage value affected by the ambient temperature during the normal temperature adjustment test.

[0024] (3) Use V bg V generated by the voltage divider of This method can effectively avoid adjusting V. ptat The voltage-temperature curve V of At that time, the nonlinear temperature coefficient is caused by the resistance.

[0025] (4) Provide accurate high temperature and over-temperature protection detection and protection schemes. When applied to multiple threshold levels for high temperature detection and over-temperature detection, only two adjustments are needed to achieve the accuracy of all threshold levels, greatly reducing the number of adjustments and adjustment time.

[0026] Furthermore, other beneficial effects of the present invention will be mentioned in the specific embodiments. Attached Figure Description

[0027] Figure 1 This is a schematic block diagram of the high temperature and over-temperature detection circuit of the present invention;

[0028] Figure 2 It is a graph showing the relationship between the voltage value of the first voltage signal and the temperature.

[0029] Figure 3 The target high temperature threshold and the target over-temperature threshold are in V ptat A schematic diagram of the -T relationship;

[0030] Figure 4 This is a circuit diagram of the temperature protection circuit for the chip of this invention. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0032] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with substantially the same function and effect. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order.

[0033] Terminology Explanation:

[0034] Over-temperature threshold: After a period of operation, the chip temperature gradually rises due to heat accumulation. Once the chip temperature reaches this over-temperature threshold, the chip must be shut down; otherwise, there is a risk of burning out the chip. When the chip temperature exceeds the over-temperature threshold, it is usually indicated by an over-temperature indicator signal.

[0035] High-temperature threshold: This is the temperature at which the chip can still operate but has not yet reached the point where it must be shut down. When the chip temperature exceeds the high-temperature threshold, it is usually indicated by a high-temperature indicator signal. The high-temperature threshold is generally lower than the over-temperature threshold; the two are relative concepts.

[0036] The over-temperature indicator signal is a signal that indicates the entire chip should be shut down.

[0037] The high temperature indicator signal is a signal that indicates the shutdown of certain functional modules of the chip.

[0038] Figure 1 This is a schematic block diagram of the high-temperature and over-temperature detection circuit of the present invention. Typically, a single chip includes a startup circuit and a reference voltage circuit; in some embodiments, the reference voltage circuit may be part of the startup circuit. Specific implementations of these circuits are common practice in the art, and will not be elaborated upon here.

[0039] For example, a reference voltage signal (the voltage value is denoted as V) can be output through a reference voltage circuit. bg The starting circuit outputs a current signal that is positively correlated with temperature (the current value is denoted as I). ptat In particular, the technique of generating current signals that are highly linearly correlated with temperature changes through circuits is a well-known technique in the field and will not be elaborated here.

[0040] Furthermore, the present invention also includes a temperature detection and correction circuit and a temperature judgment and correction circuit.

[0041] The temperature detection and correction circuit receives the reference voltage signal, a temperature-correlated current signal, and a first encoded value. The temperature detection and correction circuit also outputs the reference voltage signal and the first voltage signal (the voltage value is denoted as V). ptat ), to the temperature judgment and correction circuit.

[0042] The temperature judgment and correction circuit receives the second, third, and fourth encoded values ​​and outputs a high temperature indication signal and an over-temperature indication signal.

[0043] Furthermore, the temperature judgment and correction circuit also outputs a temperature test signal, which can be the same as or equivalent to the first voltage signal.

[0044] Furthermore, the first encoded value is used to adjust the DC component of the first voltage signal.

[0045] Furthermore, the second encoded value is used to adjust the circuit parameters so that the high-temperature voltage threshold V of the circuit is... ht and the circuit's over-temperature voltage threshold V ct The voltage difference between them is equal to the target voltage difference ∆V'. The third coded value is used by the application to select the required high-temperature detection threshold level. The fourth coded value is used by the application to select the required over-temperature detection threshold level.

[0046] The working principle and further technical details of the above-described concept of the present invention will be described in detail below to explain why the present invention can achieve a precise temperature protection solution.

[0047] Figure 2 The graph shows the relationship between the voltage value of the first voltage signal and the temperature, denoted as V. ptat The -T relationship diagram here particularly shows the temperature and voltage information recorded during the high-temperature test.

[0048] Since a temperature-dependent current signal can be generated through the circuit, the voltage value V of the first voltage signal obtained thereby is... ptat There is also a linear relationship between V and the temperature value T. Specifically, this can be expressed by the formula V. ptat =k×T+V dc It is expressed as follows, where k is the slope, T is the temperature value, and V is the temperature value. ptat It is the voltage value of the first voltage signal, V. dc It is also a voltage value, belonging to the DC component of the first voltage signal. When the temperature value is a certain value T... c At this time, the voltage value of the first voltage signal is equal to V. t V t =k×T c + V dc .

[0049] The first encoded value in this invention can be obtained through a digital encoded value circuit and output to the temperature detection and correction circuit. The first encoded value in this invention is used to adjust the V... dc That is, the first encoded value is used to adjust the bias voltage value or DC voltage value of the first voltage signal. In other words, the first encoded value of the present invention can be shifted vertically. Figure 2 The straight line shown in the image.

[0050] The temperature judgment and correction circuit outputs a high temperature indication signal (when the voltage value of the first voltage signal V...). ptat Exceeding the high temperature voltage threshold V ht (when) and over-temperature indication signal (when the voltage value V of the first voltage signal) ptat Exceeding the over-temperature voltage threshold V ct (Time), and the temperature test signal that can be further output is an analog signal. Where V ht It is the voltage threshold that triggers the high temperature indicator signal to flip, V ct It is the voltage threshold that triggers the over-temperature indication signal to flip.

[0051] The temperature test signal is a signal that reflects the first voltage signal; in one embodiment, it may be the first voltage signal itself.

[0052] Furthermore, the temperature test signal is routed to a pin on the chip, which can output the information of the first voltage signal for subsequent processing. For example, the first recorded voltage value V can be obtained later in a high-temperature test chamber. T1 Second recorded voltage value V T2 .

[0053] Place the chip in a high-temperature test chamber and gradually increase the temperature. Then record the second recorded temperature value T2 when the chip first shows the high-temperature indicator signal flipping, and the second recorded voltage value V representing the temperature test signal. T2 The system records the first recorded temperature value T1 and the first recorded voltage value V representing the temperature test signal when the over-temperature indication signal first flips. T1 Based on the various voltage and temperature values ​​obtained in the above steps, V can be determined. ptat The slope k in the -T relationship graph is (V T1 -V T2 ) / (T1 -T2)= ∆V / ∆T, where ∆V= V T1 -V T2 ∆T = T1 - T2, T1 is greater than T2, V T1 Greater than V T2 .

[0054] In one embodiment, the temperature test signal here is the same as the first voltage signal, and the second recorded voltage value V representing the temperature test signal is used. T2 This refers to the second recorded voltage value of the first voltage signal, which represents the first recorded voltage value V of the temperature test signal. T1 It is the first recorded voltage value of the first voltage signal.

[0055] In the temperature judgment and correction circuit, the high-temperature voltage threshold (denoted as V) can be obtained using a reference voltage signal. ht ) and over-temperature voltage threshold (denoted as V) ct For example, this can be achieved through voltage division. Specifically, V... ht =k h ×V bg / k2,V ct =k c ×V bg / k2, where V ht It is the high-temperature voltage threshold, V ct It is the over-temperature voltage threshold, k h and k c It is a circuit-related fixed constant, V bg k1 is the voltage value of the reference voltage signal, and k2 is a coefficient value, which can also be adjusted in the circuit design through the second encoding value.

[0056] For chips with different process angles and processes, the value of the slope k is usually different. However, for chips with the same process angle and process, if the circuit that generates the current signal that is positively correlated with temperature is the same, then the slope k is basically constant and is almost unaffected by changes in temperature and power supply voltage.

[0057] For users, to prevent the chip from burning out due to overheating, a target overheating threshold T can be set. ctc To prevent the chip from overheating and causing temperature management malfunction, a target high-temperature threshold T can be set for the chip. high These target settings are intended to ensure that the chip reaches the set target high temperature threshold T. high and target over-temperature threshold T ctc This triggers corresponding actions, such as shutting down individual chip functional modules or shutting down the entire chip. Target high temperature threshold T high and target over-temperature threshold T ctc It is known or can be known, for example, the user determines the above threshold through a configuration window or configuration file.

[0058] Figure 3 The target high temperature threshold and the target over-temperature threshold are in V ptat A schematic diagram of the -T relationship.

[0059] For the temperature set by the user, there exists and a target temperature difference ∆T'=T can be obtained. ctc -T high T high It is the target high temperature threshold, T ctc It is the target over-temperature threshold.

[0060] For temperature detection and correction circuits, the high-temperature voltage threshold V ht and over-temperature voltage threshold V ct There must be a voltage difference V between them. ct -V ht However, this voltage difference may not be equal to the target voltage difference ∆V'. Therefore, this invention corrects it using a second encoded value, where the target voltage difference ∆V' = k × ∆T' = (k c - k h )×V bg / k2, where k and ∆T' are known, therefore the target voltage difference ∆V' is also known, and can be achieved by adjusting the coefficient value k2 through the second encoding value. Expanding, we can see that ∆V' = (T ctc -T high )× (V T1 -V T2 ) / (T1 -T2).

[0061] In other words, the present invention adjusts the circuit parameters by using a second encoded value to set the circuit's over-temperature voltage threshold V. ct and the high-temperature voltage threshold V of the circuit ht The voltage difference between them is adjusted to the target voltage difference value ∆V'. At this point, if the voltage value V of the first voltage signal... ptat Exceeding the high temperature voltage threshold V ht If the temperature judgment and correction circuit outputs a high-temperature indication signal, and this signal is correct, then the subsequent over-temperature indication signal will also be correct, and vice versa. In other words, this invention can ensure the correctness of the high-temperature-over-temperature window width by using the second encoding value.

[0062] In subsequent steps, it will be ensured that the over-temperature indication signal or high-temperature indication signal is output correctly, i.e., within the target over-temperature threshold T. ctc Or the target high temperature threshold T high If the system can correctly output over-temperature or high-temperature indication signals, and assuming the high-temperature-over-temperature window width is correct as described above, then if one indication signal is correct, it means the other indication signal is also correct.

[0063] According to the formula V mentioned above t =k×T c + V dc , will T c =T2、V t =V T2 Substituting into the formula, we get V dc = V T2 -k×T2. Here, T2 and V... T2 All values ​​are obtained from tests, and k can also be calculated using the aforementioned method, i.e., V. dc = V T2 -(∆V / ∆T)×T2= V T2 -((V T1 -V T2 ) / (T1 -T2))×T2.

[0064] V dc Substitute V t =k×T c + V dc You can get V t =k×T c + V T2 -k×T2= k× (T c -T2)+ V T2 =(T c -T2)×(V T1 -V T2 ) / (T1 -T2) + V T2Thus, the desired voltage value V of the first voltage signal has been obtained. t .

[0065] In this invention, if the measured current temperature value of the chip is T c (At a normal temperature) only, the temperature detection and correction circuit can be adjusted by changing the first encoded value. By adjusting the bias voltage or DC component of the first voltage signal, the voltage value of the first voltage signal can be made equal to the desired value V. t In one embodiment, the voltage value of the temperature test signal output from the chip's pins is equal to V. t .

[0066] By using the above method, first ensure the correct width of the high-temperature-over-temperature window, and then ensure that it is within a specific temperature T. c At that time, the voltage value of the obtained first voltage signal is adjusted to the desired value V. t This ensures that the entire chip can withstand the target high temperature threshold T. high and target over-temperature threshold T ctc This triggers the corresponding action. Furthermore, if the high-temperature detection threshold corresponding to the third coded value is adjusted according to application requirements, and the temperature threshold is changed to another temperature point, the accuracy of the high-temperature threshold reversal can still be guaranteed. Similarly, if the over-temperature detection threshold corresponding to the fourth coded value is adjusted according to application requirements, and the temperature threshold is changed to another temperature point, the accuracy of the over-temperature threshold reversal can still be guaranteed.

[0067] Furthermore, the first and second encoded values, which are ultimately applied to the chip, are applied to all chips of the same type produced in the same batch.

[0068] In this invention, both the first encoded value and the second encoded value are generated by a digital encoding circuit.

[0069] As an example of the aforementioned chip temperature protection method Figure 4 This is a circuit diagram of the chip temperature protection circuit of the present invention, which includes a temperature detection and correction circuit, as well as a temperature judgment and correction circuit.

[0070] In the temperature detection and correction circuit, the current source (current magnitude I) ptat One end of the current source is connected to the device's operating voltage (Voltage Drain-to-Drain, VDD), and the other end is connected to the first terminal of the first resistor, with the second terminal of the first resistor grounded. The connection point between the current source and the first resistor serves as the output node of this first branch, and its output voltage is V. pt .

[0071] Reference voltage (voltage magnitude is V) bgA first adjustable element (e.g., a resistor, controlled by a first coded value code1) is connected to its first terminal. The second terminal of the first adjustable element is connected to the first terminal of the second resistor, and the second terminal of the second resistor is grounded. The connection point between the first adjustable element and the second resistor serves as the output node of this second branch, and its output voltage is V. of .

[0072] Then, the voltage signals (V) output by the output nodes of the first branch and the second branch are respectively... pt and V of The input is given to an adder, and the output voltage of the adder is V. ptat .

[0073] In the temperature detection and correction circuit, the adder's output voltage (voltage value is V) ptat The inputs are simultaneously fed into the positive inputs of both comparators.

[0074] In addition, there is a second adjustable element (such as a resistor) controlled by the second coded value code2. The reference voltage is connected to the first terminal of the second adjustable element, and the second terminal of the second adjustable element is connected to the first terminal of the third resistor and leads out to the first node (the magnitude of the output voltage is V). ctc The second terminal of the third resistor is connected to the first terminal of the fourth resistor, and a second node is drawn out (the output voltage is V). high The second terminal of the fourth resistor is grounded.

[0075] The negative input of the first comparator is connected to the first node, and the output voltage of the first comparator is V_CRITICAL.

[0076] The negative input of the second comparator is connected to the second node. The output voltage of the second comparator is V_HIGH.

[0077] In summary, the temperature protection circuit of this chip achieves the functions of temperature detection and corresponding logic output through the process of "temperature detection and voltage correction" and "threshold comparison and judgment". For a more detailed explanation of the chip temperature protection circuit's operation, please refer to the previous section on chip temperature protection methods; it will not be repeated here.

[0078] In the chip temperature protection circuit of this invention, the following condition is met: V pt =k×T+V of1 Where k is a coefficient value, T is a temperature value, and V is a constant. of1 A bias voltage value, and assuming V of1 =V dc -V of And V ptat =V pt +V of =k×T+V of1+V of = k×T+V dc In other words, the voltage value V of the adder's output voltage in this example. ptat With appendix Figure 3 The function description is consistent with the theoretically expected goal. It is worth mentioning that this invention is not limited to this circuit structure and is not construed as such.

[0079] To better illustrate the present invention, numerous specific details have been provided in the detailed embodiments described above. Those skilled in the art should understand that the present invention can be practiced even without certain specific details. In some instances, methods, means, elements, and circuits well-known to those skilled in the art have not been described in detail in order to highlight the main points of the present invention.

[0080] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A chip temperature protection method, characterized in that, Includes the following steps: Generate a current signal and a reference voltage signal that are positively correlated with temperature; A first voltage signal positively correlated with temperature is generated based on the temperature-positive current signal; Change the chip temperature and record the first recorded temperature value T1 and the first recorded voltage value V of the first voltage signal when the over-temperature indication signal flips. T1 The second recorded temperature value T2 and the second recorded voltage value V of the first voltage signal are recorded when the high temperature indicator signal flips. T2 ; The circuit parameters are adjusted by the second encoded value to achieve the circuit's over-temperature voltage threshold V. ct and the high-temperature voltage threshold V of the circuit ht The voltage difference between them is equal to the target voltage difference ∆V' = (T ctc -T high )×(V T1 -V T2 ) / (T1-T2), where T high It is the target high temperature threshold, T ctc It is the target over-temperature threshold, V ht It is the voltage threshold that triggers the high temperature indicator signal to flip, V ct It is the voltage threshold that triggers the over-temperature indication signal to flip; Get the current temperature value T of the chip c The DC component of the first voltage signal is adjusted by the first encoding value, so that the voltage value of the first voltage signal is consistent with V. t =(T c -T2)×(V T1 -V T2 ) / (T1-T2)+V T2 equal; The high temperature indicator signal is a signal that indicates the shutdown of some functional modules of the chip; the over-temperature indicator signal is a signal that indicates the shutdown of the entire chip.

2. The chip temperature protection method according to claim 1, characterized in that: The first and second encoded values, which will ultimately be applied to the chip, will be applied to all chips of the same type produced in the same batch.

3. The chip temperature protection method according to claim 1, characterized in that: The high-temperature voltage threshold V of the circuit ht and the over-temperature voltage threshold V of the circuit ct It is obtained by voltage division of a reference voltage signal.

4. The chip temperature protection method according to claim 1, characterized in that: The chip outputs a temperature test signal through its pins, and the temperature test signal is the same as the first voltage signal.

5. The chip temperature protection method according to claim 1, characterized in that: The chip is placed in a high-temperature test chamber, and the temperature of the chip is changed by continuously changing the temperature in the high-temperature test chamber.

6. The chip temperature protection method according to claim 4, characterized in that: The circuit described is a temperature detection and correction circuit; The temperature judgment and correction circuit outputs a high temperature indication signal, an over-temperature indication signal, and a temperature test signal.

7. The chip temperature protection method according to claim 6, characterized in that: The temperature judgment and correction circuit receives a reference voltage signal and a first voltage signal.

8. The chip temperature protection method according to claim 7, characterized in that: Both the reference voltage signal and the first voltage signal are generated by the temperature detection and correction circuit.

9. The chip temperature protection method according to claim 8, characterized in that: The circuit parameters are adjusted using the second encoded value before the DC component of the first voltage signal is adjusted using the first encoded value.

10. A chip temperature protection circuit for implementing the chip temperature protection method of claim 1, comprising a temperature detection and correction circuit, and a temperature judgment and correction circuit, characterized in that: In the first branch of the temperature detection and correction circuit, one end of the current source is connected to VDD, and the other end is connected to the first end of the first resistor. The second end of the first resistor is grounded. The connection node between the current source and the first resistor serves as the output node of the first branch. In the second branch of the temperature detection and correction circuit, the reference voltage is connected to the first terminal of the first adjustable element, the second terminal of the first adjustable element is connected to the first terminal of the second resistor, the second terminal of the second resistor is grounded, and the connection node of the first adjustable element and the second resistor serves as the output node of the second branch. The first adjustable element is controlled by the first coded value. The adder takes the voltage signals output from the output nodes of the first branch and the second branch, respectively, as its input. In the temperature judgment and correction circuit, the output voltage of the adder is simultaneously input to the positive input terminal of the first comparator and the positive input terminal of the second comparator. The reference voltage is connected to the first terminal of the second adjustable element, the second terminal of the second adjustable element is connected to the first terminal of the third resistor and leads out to the first node, the second terminal of the third resistor is connected to the first terminal of the fourth resistor and leads out to the second node, the second terminal of the fourth resistor is grounded, and the second adjustable element is controlled by the second coded value. The negative input of the first comparator is connected to the first node, and the output voltage of the first comparator is an over-temperature indication signal; the negative input of the second comparator is connected to the second node, and the output voltage of the second comparator is a high-temperature indication signal.

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