Far infrared heating film, preparation method of far infrared heating film and far infrared physiotherapy pad

Abstract

The invention provides a far-infrared heating film, a preparation method of the far-infrared heating film and a far-infrared physiotherapy pad, and relates to the technical field of far-infrared heating, and the far-infrared heating film comprises a first insulating film layer, a second insulating film layer and a nanocrystal heating body. The second insulating film layer is attached to the first insulating film layer. And at least part of the conductor is coated between the first insulating film layer and the second insulating film layer. The nanocrystal heating body and the electric conductor are connected to form an electric loop, and the nanocrystal heating body is wrapped between the first insulating film layer and the second insulating film layer. The electric conductor and the nanocrystal heating body are connected to form the electric loop, the electric loop is arranged between the first insulating film layer and the second insulating film layer, the nanocrystal heating body is adopted as a far infrared ray generating material, compared with graphene, the cost is lower, and the problem that in the prior art, the preparation cost of a far infrared film is high is solved.

Description

Technical Field

[0001] This application relates to the field of far-infrared heating technology, specifically to far-infrared heating films, methods for preparing far-infrared heating films, and far-infrared therapy pads. Background Technology

[0002] Far-infrared rays possess strong penetrating and radiating power, exhibiting significant temperature control and resonance effects. They are easily absorbed by objects and converted into their internal energy. When absorbed by the human body, far-infrared rays cause water molecules to resonate, activating them and strengthening their intermolecular bonds, thereby activating biomolecules such as proteins. Due to the resonance effect of biological cells, far-infrared heat energy can be transferred to deeper layers of the skin, raising the temperature of these deeper tissues, and the resulting warmth radiates outwards. This effect dilates capillaries, promotes blood circulation, strengthens metabolism between tissues, increases tissue regeneration, enhances the body's immunity, and regulates abnormal mental states, thus providing medical and health benefits.

[0003] Currently, there are various far-infrared products on the market, and due to differences in materials, their manufacturing processes and effects vary. In fact, most organisms, plants, and materials in nature produce infrared radiation, only with slight variations in emissivity and intensity. Too low an energy level makes it difficult for the human body to absorb, while too high an energy level can lead to uncontrolled temperature fluctuations. Therefore, far-infrared research focuses more on energy control and matching. Finding ideal materials is therefore no easy task.

[0004] Commonly used materials that generate far-infrared radiation include biochar, carbon fiber, tourmaline, far-infrared ceramics, metal oxides, and silicon carbide. Although these materials can produce far-infrared radiation, they suffer from high production costs. Summary of the Invention

[0005] The purpose of this application is to provide a far-infrared heating film, a method for preparing the far-infrared heating film, and a far-infrared therapy pad, in order to improve the problem of high preparation cost of current far-infrared heating films.

[0006] On one hand, this application provides a far-infrared heating film, comprising: a first insulating film layer, a second insulating film layer, and a nanocrystal heating element. The second insulating film layer is bonded to the first insulating film layer. At least a portion of the conductor is coated between the first insulating film layer and the second insulating film layer. The nanocrystal heating element is connected to the conductor to form an electrical circuit, and the nanocrystal heating element is coated between the first insulating film layer and the second insulating film layer.

[0007] In one embodiment, the number of nanocrystal heating elements is two or more, with at least two nanocrystal heating elements connected in series through the conductor, and / or at least two nanocrystal heating elements connected in parallel through the conductor.

[0008] In one embodiment, the electrical circuit is zigzag-shaped, with at least a portion of the conductor located at the bends in the electrical circuit.

[0009] In one embodiment, the first insulating film layer is provided with a first positioning structure, and the second insulating film layer is provided with a second positioning structure. The first positioning structure and the second positioning structure cooperate to achieve positioning and bonding of the first insulating film layer and the second insulating film layer.

[0010] In one embodiment, both the first positioning structure and the second positioning structure are positioning holes, and multiple first positioning structures and multiple second positioning structures are provided. The multiple first positioning structures are spaced apart on the first insulating film layer, and the multiple second positioning structures are spaced apart on the second insulating film layer. The first positioning structures and the second positioning structures are aligned.

[0011] In one embodiment, a lead hole is formed on the first insulating film layer, and the far-infrared heating film further includes a lead wire, which is electrically connected to the conductor, and passes through the lead hole and out of the first insulating film layer.

[0012] In one embodiment, the thickness of the nanocrystal heating element is 10 μm to 30 μm; And / or, the thickness of the conductor is 10 μm to 30 μm; And / or, the thickness of the first insulating film layer is 25 μm to 50 μm; And / or, the thickness of the second insulating film layer is 25μm to 50μm.

[0013] On the other hand, this application also provides a method for preparing a far-infrared heating film, including the following steps: A first insulating film layer is formed on the first surface of the conductive strip; The conductive strip is die-cut to form multiple conductors; A nanocrystal heating element is welded between multiple conductors, so that the conductors and the nanocrystal heating element form an electrical circuit; A second insulating film layer is formed on the other surface of the conductor.

[0014] In one embodiment, the first insulating film layer has a first positioning hole, and the second insulating layer has a second positioning hole; the step of forming the second insulating film layer on the other surface of the conductor includes: The second insulating film layer is positioned relative to the first insulating film layer through the first positioning hole and the second positioning hole, and the first positioning hole is aligned with the second positioning hole.

[0015] In one embodiment, the step of forming a second insulating film layer on the other surface of the conductor further includes: The first insulating film layer and the second insulating film layer are vacuum hot-pressed to bond them together, thereby removing air bubbles between the first insulating film layer and the second insulating film layer.

[0016] In another aspect, embodiments of this application also provide a far-infrared therapy pad, comprising: a first skin contact layer, a far-infrared therapy structure, and a second skin contact layer stacked together, wherein the far-infrared therapy structure includes the far-infrared heating film as described above.

[0017] According to the far-infrared heating film in the above embodiments, an electrical circuit is formed by connecting a conductor and a nanocrystal heating element, and the circuit is positioned between the first insulating film layer and the second insulating film layer. The nanocrystal heating element is used as the far-infrared emitting material, which is cheaper than graphene and solves the problem of high manufacturing cost of far-infrared films in the prior art. Applying the above-mentioned far-infrared heating film to far-infrared therapy pads can solve the problem of high manufacturing cost of far-infrared therapy pads in the prior art.

[0018] According to the far-infrared heating film preparation method in the above embodiments, multiple conductors are formed by die-cutting the conductive strip. If etching or large-scale punching is used, a large amount of material will be wasted and the processing cost will be higher. However, die-cutting will not waste a large amount of material and can greatly reduce the cost, thus solving the problem of high far-infrared film preparation cost in the prior art. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of a far-infrared heating film provided in an embodiment of this application.

[0020] Figure 2 This is a schematic diagram of the structure of the first insulating film layer and the conductor in a far-infrared heating film provided in an embodiment of this application.

[0021] Figure 3 This is a schematic diagram of the structure of the first insulating film layer, the conductor, and the nanocrystal heating element in a far-infrared heating film provided in an embodiment of this application.

[0022] Figure 4 An infrared radiation spectrum of a far-infrared heating film provided in an embodiment of this application.

[0023] Figure 5A temperature curve of a far-infrared heating film provided in an embodiment of this application.

[0024] Figure 6 This is a schematic diagram of the structure of a far-infrared therapy pad provided in an embodiment of this application.

[0025] Figure 7 This is a cross-sectional view of a far-infrared therapy pad provided in an embodiment of this application.

[0026] Figure 8 This is a flowchart illustrating a method for preparing a far-infrared heating film, as provided in an embodiment of this application.

[0027] Figure 9 This is a flowchart illustrating another method for preparing a far-infrared heating film provided in an embodiment of this application.

[0028] Figure 10 This is a flowchart illustrating another method for preparing a far-infrared heating film provided in an embodiment of this application.

[0029] in: 1. Far-infrared heating film; 10. First insulating film layer; 110. First positioning structure; 20. Second insulating film layer; 30. Conductor; 40. Nanocrystal heating element; 50. Electrical circuit; 60. Lead wire; 2. Far-infrared therapy pad; 210. First skin contact layer; 211. Soft skin-friendly material layer; 212. Soft foam material layer; 220. Second skin contact layer; 230. Controller; 240. Power cord. Detailed Implementation

[0030] The present application will be further described in detail below with reference to specific embodiments and accompanying drawings. Similar elements in different embodiments are referred to by associated similar element reference numerals. In the following embodiments, many details are described to facilitate a better understanding of the present application. However, those skilled in the art will readily recognize that some features may be omitted in different situations, or may be replaced by other elements, materials, or methods. In some cases, certain operations related to the present application are not shown or described in the specification. This is to avoid obscuring the core parts of the present application with excessive description. For those skilled in the art, detailed description of these related operations is not necessary; they can fully understand the related operations based on the description in the specification and general technical knowledge in the art.

[0031] Furthermore, the features, operations, or characteristics described in the specification can be combined in any suitable manner to form various embodiments, and the operational steps involved in each embodiment can also be rearranged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the specification and drawings are only for clearly describing a particular embodiment and do not imply that they represent the necessary components and / or order.

[0032] The serial numbers assigned to components in this document, such as "first" and "second," are used only to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages).

[0033] Please also refer to Figures 1-3 This application provides a far-infrared heating film 1, which includes a first insulating film layer 10, a second insulating film layer 20, and a nanocrystal heating element 40. The conductor 30 and the nanocrystal heating element 40 are connected to form an electrical circuit 50, and the electrical circuit 50 is sandwiched between the first insulating film layer 10 and the second insulating film layer 20. The nanocrystal heating element 40 can emit far-infrared rays after being powered on.

[0034] In this embodiment, the first insulating film layer 10 and the second insulating film layer 20 are bonded together, and the first insulating film layer 10 and the second insulating film layer 20 are used to cover at least part of the structure of the conductor 30. This can provide electrical insulation protection for the electrical circuit 50, prevent the electrical circuit 50 from overheating due to short circuit. At the same time, the first insulating film layer 10 and the second insulating film layer 20 have properties such as waterproof, dustproof, bending resistant, high temperature resistant (>200℃), high voltage resistant (>500VDC) and anti-aging, so as to provide physical protection for the electrical circuit 50.

[0035] This application does not limit the specific form, structure, and formation method of the first insulating film layer 10 and the second insulating film layer 20. In addition, in this application embodiment, the first insulating film layer 10 can be set to be the same as the second insulating film layer 20. For ease of explanation, the first insulating film layer 10 will be used as an example below.

[0036] For example, in one embodiment, the first insulating film layer 10 can be a high-temperature resistant insulating film, such as a material with good insulation properties and high-temperature resistance, such as polyimide (PI) or polyethylene terephthalate (PET).

[0037] Furthermore, in one embodiment, a roll-shaped insulating film can be used, which is die-cut to form a single sheet structure for use as the first insulating film layer 10. Specifically, the roll-shaped insulating film can be die-cut according to the actual situation so that the size of the first insulating film layer 10 after die-cutting is the required size. This can reduce waste and thus help reduce the cost of the entire far-infrared heating film 1.

[0038] Furthermore, in one embodiment, a lead hole can be provided in the first insulating film layer 10 to facilitate the subsequent connection of the electrical circuit 50 to the lead 60, thereby enabling the electrical circuit 50 to be connected to an external power source. Further, in one embodiment, the far-infrared heating film 1 may also include a lead 60, which can be connected to the conductor 30. The lead 60 passes through the lead hole and exits the first insulating film layer 10, so that the electrical circuit 50 can be connected to an external power source. As mentioned above, in this embodiment, the first insulating film layer 10 and the second insulating film layer 2 cover the conductor 30. It is understood that in another embodiment, the conductor 30 can be extended beyond the first insulating film layer 10 and the second insulating film layer 20 instead of the lead 60. As mentioned above, in this embodiment, the first insulating film layer 10 and the second insulating film layer 2 cover a portion of the structure of the conductor 30. The specific configuration can be adjusted according to actual conditions and is not limited here.

[0039] In this embodiment, the thickness of the first insulating film layer 10 can be set to 25μm to 50μm. This allows the first insulating film layer 10 to effectively provide insulation while reducing the overall size of the far-infrared heating film 1. For example, the first insulating film layer 10 can be 25μm, 30μm, 45μm, or 50μm, etc., and can be set according to actual conditions. It is understood that the thickness of the second insulating film layer 20 can be set to be the same as the thickness of the first insulating film layer 10. For details, please refer to the foregoing content, which will not be repeated here.

[0040] Since the first insulating film layer 10 and the second insulating film layer 20 need to be bonded together, in order to avoid the electrical circuit 50 being exposed due to misalignment of the first insulating film layer 10 and the second insulating film layer 20, in one embodiment, a first positioning structure 110 is provided on the first insulating film layer 10, and a second positioning structure (not shown in the figure) is provided on the second insulating film layer 20. The first positioning structure 110 and the second positioning structure can cooperate with each other and are used to achieve the positioning and bonding of the first insulating film layer 10 and the second insulating film layer 20.

[0041] It should be noted that the embodiments of this application do not limit the specific form and structure of the first positioning structure 110 and the second positioning structure. For example, in one embodiment, the first positioning structure 110 and the second positioning structure can be provided in the form of protrusions and grooves. When the first insulating film layer 10 and the second insulating film layer 20 are attached, the protrusions can be aligned with the grooves to achieve precise positioning and attachment of the first insulating film layer 10 and the second insulating film layer 20.

[0042] Furthermore, in this embodiment, the first positioning structure 110 and the second positioning structure can be configured as positioning holes. When the first insulating film layer 10 and the second insulating film layer 20 are bonded together, the positioning holes on the first insulating film layer 10 can be aligned with the positioning holes on the second insulating film layer 20 to achieve precise positioning and bonding of the first insulating film layer 10 and the second insulating film layer 20. In this embodiment, using positioning holes to assist positioning not only achieves a positioning effect but also provides ventilation, avoiding or reducing the problem of heat accumulation caused by the conductor 30 and the nanocrystal heating element 40, leading to localized overheating and damage to the far-infrared heating film 1.

[0043] It is understood that the embodiments of this application do not limit the number of the first positioning structure 110 and the second positioning structure, as long as the number of the first positioning structure 110 and the second positioning structure matches. The specific number can be set according to the actual situation and is not limited here. Furthermore, the embodiments of this application do not limit the specific placement position of the first positioning structure 110 and the second positioning structure. Taking the first positioning structure 110 as a positioning hole as an example, in this embodiment, the first positioning structure 110 can be uniformly placed on the first insulating film layer 10 and away from the position of the electrical circuit 50. Furthermore, in one embodiment, the other areas of the first insulating film layer 10, except for the area covering the electrical circuit 50, can be hollowed out to serve as the first positioning structure 110. This can not only increase the ventilation area of ​​the positioning hole, but also reduce the material used in the first insulating film layer 10, thereby helping to reduce costs.

[0044] Furthermore, as mentioned above, the first positioning structure 110 and the second positioning structure can be configured as positioning holes. In one specific embodiment, multiple first positioning structures 110 and multiple second positioning structures can be provided. Multiple first positioning structures 110 are spaced apart on the first insulating film layer 10, and multiple second positioning structures are spaced apart on the second insulating film layer 30. The first positioning structures and the second positioning structures are aligned. That is, in this embodiment, multiple positioning holes are provided on both the first insulating film layer 10 and the second insulating film layer 20, and the number of positioning holes on the first insulating film layer 10 corresponds to the number of positioning holes on the second insulating film layer 20. This allows the first insulating film layer 10 and the second insulating film layer 20 to be bonded together by aligning the positioning holes on the first insulating film layer 10 and the positioning holes on the second insulating film layer 20.

[0045] The embodiments of this application do not limit the specific form, structure and formation method of the conductor 30. For example, in one embodiment, the conductor 30 can be made of a material with excellent conductivity and bending resistance and high ductility, such as copper, platinum, etc. The specific material can be selected according to the actual situation.

[0046] Furthermore, in one embodiment, a roll of conductive strip can be used, which is then die-cut into a block structure for use as the conductor 30. Specifically, in this embodiment, an insulating film can be first applied to the surface of the roll of conductive strip, and then the roll of conductive strip can be die-cut according to the designed pattern using die-cutting technology. After removing excess waste, a conductor 30 of the preset shape is obtained. Compared with the traditional method of forming the conductor 30 by etching or large-scale punching, the die-cutting technology used in this embodiment can reduce material waste, thereby helping to reduce costs.

[0047] The embodiments of this application do not limit the specific shape of the conductor 30. For example, it can be a block structure, such as a long strip or a square strip. The conductor 30 can be set as a plurality of conductors and arranged at intervals. The interval between adjacent conductors 30 can be used to connect the nanocrystal heating element 40.

[0048] In this embodiment, the thickness of the conductor 30 can be set to 10μm to 30μm, which can also reduce the size of the entire far-infrared heating film 1. For example, the first insulating film layer 10 can be 10μm, 15μm, 20μm or 30μm, etc., and can be set according to the actual situation.

[0049] This application does not limit the specific form, structure, and formation method of the nanocrystal heating element 40. For example, in this embodiment, the nanocrystal heating element 40 can be configured to deposit a far-infrared radiation crystal coating material on the surface of a metal strip, and the nanocrystal heating element 40 can radiate far-infrared rays of 4μm to 14μm outward under thermal action. The metal strip can be made of stainless steel, copper, or other metals with good conductivity, etc., and can be set according to the actual situation.

[0050] Furthermore, in one embodiment, a roll-shaped ultrathin nanocrystal heating element 40 can be used, which is cut into a block shape by a device to be used as the nanocrystal heating element 40.

[0051] In this embodiment, the nanocrystal heating element 40 can be welded to the conductor 30 to form an electrical circuit 50. For example, laser welding, ultrasonic welding, or resistance welding can be used, and the specific configuration can be determined according to actual conditions. This application does not limit the specific structure and form of the electrical circuit 50. For example, in one embodiment, the electrical circuit 50 can be configured in a reciprocating bending shape, and at least part of the conductor 30 is located at the bend of the electrical circuit 50. This can avoid or reduce the problem of the far-infrared heating film 1 being bent or rubbed during use, which could damage the nanocrystal heating element 40 and thus affect the normal use of the entire far-infrared heating film 1.

[0052] Furthermore, in this embodiment, there are two or more nanocrystal heating elements 40, with at least two nanocrystal heating elements 40 connected in series via a conductor 30 or at least two nanocrystal heating elements 40 connected in parallel via a conductor 30. This can also avoid or reduce the problem of heat concentration within the far-infrared heating film 1, while reducing the amount of nanocrystal heating elements 40 used, thereby helping to reduce costs. Moreover, by interleaving the nanocrystal heating elements 40 in series or in parallel with the conductor 30, the far-infrared radiation becomes more uniform.

[0053] In this embodiment, the thickness of the nanocrystal heating element 40 can be set to 10μm to 30μm, which can also reduce the size of the entire far-infrared heating film 1. For example, the nanocrystal heating element 40 can be 10μm, 15μm, 20μm or 30μm, etc., and can be set according to the actual situation.

[0054] Please see Figure 4 In one specific embodiment, this application provides a far-infrared heating film 1 with dimensions of 255mm*225mm*0.15mm, a resistance of 9.3Ω, and an input voltage of DC12V. Figure 4 The horizontal axis represents wavelength, and the vertical axis represents energy. The infrared radiation detection results are shown in the table below:

[0055] It is evident that the far-infrared heating film 1 provided in this application embodiment can meet the detection requirements.

[0056] Please also see Figure 5 In the graph, the horizontal axis represents time, the vertical axis represents temperature, curves 1 and 2 represent two monitoring points on the far-infrared heating film 1, and curves 3 and 4 represent the indoor environment. The temperature test results are shown in the table below:

[0057] It is evident that the far-infrared heating film 1 provided in this embodiment has a fast heating rate.

[0058] In summary, the far-infrared heating film 1 in the above embodiments forms an electrical circuit 50 by connecting the conductor 30 and the nanocrystal heating element 40, and sets it between the first insulating film layer 10 and the second insulating film layer 20. The nanocrystal heating element 40 is used as the far-infrared emitting material, which is lower in cost than graphene and solves the problem of high manufacturing cost of far-infrared films in the prior art.

[0059] Please also refer to Figure 6 and Figure 7 This application embodiment also provides a far-infrared therapy pad 2, which includes a first skin contact layer 210, a far-infrared therapy structure, and a second skin contact layer 220 stacked together. The far-infrared therapy structure includes a far-infrared heating film 1 as described above.

[0060] In this embodiment, the first skin contact layer 210 and the second skin contact layer 220 can be configured with the same structure, which facilitates production assembly.

[0061] Taking the first skin contact layer 210 as an example, the embodiments of this application do not limit the specific form of the first skin contact layer 210. For example, in one embodiment, the first skin contact layer 210 can be made of a foam material with low hardness, high resilience, flexibility and low absorption of far-infrared rays, such as soft silicone rubber foam, soft high-resilience polyurethane foam, etc. The specific form can be set according to the situation.

[0062] Furthermore, in one embodiment, the first skin contact layer 210 may include a soft, skin-friendly material layer 211 and a soft foam material layer 212. The soft foam material layer 212 may be made of soft silicone rubber foam, soft high-resilience polyurethane foam, etc., while the soft, skin-friendly material layer 211 may be made of fabric. This allows the user to directly contact the skin during use, avoiding skin discomfort and enhancing the tactile experience. Specific details can be configured according to actual conditions and are not limited here.

[0063] The second skin contact layer 220 can be referred to in the relevant description of the first skin contact layer 210 mentioned above, and will not be repeated here.

[0064] In this embodiment, the far-infrared therapy pad 2 may further include a controller 230, which is electrically connected to the lead wire 60 in the far-infrared heating film 1. The controller 230 can be used to control the electrical circuit, for example, the controller 230 can control the heating power of the far-infrared heating film 1 according to actual needs. For example, in one embodiment, the controller may have 10 temperature control levels and 3 timer levels to adapt to different usage scenarios.

[0065] In addition, in this embodiment, the far-infrared therapy pad 2 may also include a power cord 240, which is connected to the controller 230 and is used to connect to an external power source to power the infrared heating film 1. This embodiment does not impose specific restrictions on the power supply form. For example, it can be powered by DC 5V~20V or AC 220V to meet different usage scenarios. The specific settings can be made according to the actual situation.

[0066] It should be noted that the embodiments of this application do not limit the specific form of the infrared therapy pad. For example, it can be a lumbar support pad, a seat cushion, a knee pad, a neck support pad, a uterine warming pad, a thermal vest, a hand and foot care pad, etc. The specific form can be set according to the actual situation.

[0067] Since the far-infrared therapy pad 2 in the above embodiments uses the far-infrared heating film 1 mentioned above, the far-infrared therapy pad 2 in the above embodiments can solve the problem of high manufacturing cost of far-infrared therapy pad 2 in the prior art.

[0068] Please see Figure 8 This application also provides a method for preparing a far-infrared heating film, comprising the following steps: S100: A first insulating film layer is formed on the first surface of the conductive strip.

[0069] The embodiments of this application do not limit the above-described forming method. For example, an insulating film can be pasted on the surface of the conductive strip to form the first insulating film layer.

[0070] S200: Die-cut the conductive strip to form multiple conductors.

[0071] Compared to traditional methods of forming conductors by etching or large-area punching, the die-cutting technology used in this application reduces material waste and thus helps to reduce costs.

[0072] Furthermore, in this embodiment, multiple conductors can be arranged at intervals, and positions for nanocrystal heating elements are reserved between adjacent conductors.

[0073] S300: A nanocrystal heating element is welded between multiple conductors, so that the conductors and the nanocrystal heating element form an electrical circuit.

[0074] In this embodiment, the far-infrared radiation is made more uniform by interleaving the nanocrystal heating element and the conductor in series or parallel.

[0075] In addition, it should be noted that the welding points between the nanocrystal heating element and the conductor must be firm and meet reliability requirements, and must be free of burrs to avoid the possibility of the electrical circuit breaking due to welding problems at a certain point.

[0076] S400: A second insulating film layer is formed on the other surface of the conductor.

[0077] It is understood that there are no restrictions on the formation method of the second insulating film layer. For example, in this embodiment, the second insulating film layer can also be formed by pasting.

[0078] In one embodiment, the first insulating film layer may have a first positioning hole, and the second insulating film layer may have a second positioning hole. (See also...) Figure 9 In step S400: the step of forming a second insulating film layer on another surface of the conductor, the following may be included: Step S410: Position the second insulating film layer and the first insulating film layer through the first positioning hole and the second positioning hole, and align the first positioning hole and the second positioning hole.

[0079] Using the first positioning hole and the second positioning hole to align the first insulating film layer and the second insulating film layer not only facilitates positioning but also improves the air permeability of the entire far-infrared heating film.

[0080] In addition, please see Figure 10 After step S400: forming a second insulating film layer on another surface of the conductor, the following may be included: Step S500: Vacuum hot pressing is performed on the first insulating film layer and the second insulating film layer to make the first insulating film layer and the second insulating film layer adhere together, so as to remove the air bubbles between the first insulating film layer and the second insulating film layer.

[0081] It is understandable that since the conductor and the nanocrystal heating element will generate heat after being energized, if there are air bubbles between the first insulating film layer and the second insulating film layer, the air bubbles between the first insulating film layer and the second insulating film layer may expand due to heat, thereby creating a safety hazard. Therefore, in this embodiment, it is necessary to remove the air bubbles between the first insulating film layer and the second insulating film layer.

[0082] In summary, the far-infrared heating film preparation method in the above embodiments forms multiple conductors by die-cutting the conductive strip. If etching or large-scale punching is used, it will result in a large amount of material waste and higher processing costs. However, die-cutting does not waste a large amount of material and can greatly reduce costs, thus solving the problem of high far-infrared film preparation costs in the prior art.

[0083] The above examples illustrate this application only to aid understanding and are not intended to limit its scope. Those skilled in the art to which this application pertains can make various simple deductions, modifications, or substitutions based on the ideas presented.

Claims

1. A far infrared heat generating film, characterized by, The far-infrared heating film comprises: a first insulating film layer and a second insulating film layer, the second insulating film layer being attached to the first insulating film layer; a conductive body, at least part of the conductive body being covered between the first insulating film layer and the second insulating film layer; and a nano-crystal heating body, the nano-crystal heating body being connected with the conductive body to form an electric circuit, the nano-crystal heating body being covered between the first insulating film layer and the second insulating film layer.

2. The far infrared heat generating film according to claim 1, wherein The number of the nano-crystal heating bodies is two or more, at least two of the nano-crystal heating bodies being connected in series through the conductive body, and / or, at least two of the nano-crystal heating bodies being connected in parallel through the conductive body.

3. The far infrared heat generating film according to claim 1, wherein The electric circuit is in a reciprocating bending shape, and at least part of the conductive body is located at a bending position of the electric circuit.

4. The far infrared heat generating film according to claim 1, wherein The first insulating film layer is provided with a first positioning structure, the second insulating film layer is provided with a second positioning structure, the first positioning structure is matched with the second positioning structure, and the first insulating film layer and the second insulating film layer are positioned and attached.

5. The far infrared heat generating film according to claim 4, wherein The first positioning structure and the second positioning structure are both positioning holes, and a plurality of the first positioning structures and a plurality of the second positioning structures are provided, the first positioning structures are arranged at intervals on the first insulating film layer, the second positioning structures are arranged at intervals on the second insulating film layer, and the first positioning structures and the second positioning structures are aligned.

6. The far infrared heat generating film according to claim 1, wherein The first insulating film layer is provided with a lead hole, and the far-infrared heating film further comprises a lead, the lead being electrically connected to the conductive body, the lead passing through the lead hole and out of the first insulating film layer.

7. The far infrared heat generating film according to any one of claims 1 to 6, wherein The thickness of the nano-crystal heating body is 10 μm to 30 μm; and / or, the thickness of the conductive body is 10 μm to 30 μm; and / or, the thickness of the first insulating film layer is 25 μm to 50 μm; and / or, the thickness of the second insulating film layer is 25 μm to 50 μm.

8. A method of manufacturing a far infrared heat generating film, characterized by, The method comprises the following steps: forming a first insulating film layer on a first surface of a conductive strip; die-cutting the conductive strip to form a plurality of conductive bodies; welding a nano-crystal heating body between the plurality of conductive bodies, so that the conductive bodies and the nano-crystal heating body form an electric circuit; forming a second insulating film layer on another surface of the conductive body.

9. The method for preparing the far-infrared heating film as described in claim 8, characterized in that, The first insulating film layer has a first positioning hole, and the second insulating film layer has a second positioning hole; and the step of forming a second insulating film layer on another surface of the conductive body comprises: positioning the second insulating film layer and the first insulating film layer through the first positioning hole and the second positioning hole, and aligning the first positioning hole and the second positioning hole.

10. The method for preparing the far-infrared heating film as described in claim 8, characterized in that, After the step of forming a second insulating film layer on another surface of the conductive body, the method further comprises: vacuum heat-pressing the first insulating film layer and the second insulating film layer, and attaching the first insulating film layer and the second insulating film layer, so as to discharge air bubbles between the first insulating film layer and the second insulating film layer.

11. A far infrared physiotherapy pad characterized by, The far infrared physiotherapy pad comprises a first skin contact layer, a far infrared physiotherapy structure and a second skin contact layer which are stacked, and the far infrared physiotherapy structure comprises the far infrared heating film according to any one of claims 1-7.

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