Plasma implementation method, system, medium and equipment based on fluidized bed DBD reactor
By designing a fluidized bed DBD reactor, a uniform dielectric barrier discharge zone was constructed using a high-pressure pulse drive module and a cyclone device. This solved the problem of low catalyst utilization in fixed-bed internal catalytic structures, achieved efficient contact between the catalyst and plasma, and improved the efficiency of ammonia synthesis reaction.
Patent Information
- Application Number
- CN202511819127.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-04
- Publication Date
- 2026-02-27
AI Technical Summary
Existing fixed-bed internal catalytic structures suffer from low catalyst utilization, low contact efficiency, and limited gas flow in plasma catalytic ammonia synthesis, making it impossible to dynamically adjust the catalyst exposure area or the plasma interaction position.
A fluidized bed DBD reactor is used, and a high-voltage pulse drive module converts DC power into high-voltage pulses. Combined with a cyclone device, internal electrode and metal sheet external electrode, a uniform dielectric barrier discharge region is constructed to achieve full fluidization of the catalyst and a rotating flow field, thereby improving the contact efficiency between the catalyst and the plasma.
It significantly improves catalyst utilization and reaction efficiency, avoids local high field and micro-arc discharge, and provides an excellent plasma ammonia synthesis reaction environment.
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Figure CN121586142A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of energy conversion technology, and in particular to a plasma realization method, system, medium and equipment based on a fluidized bed DBD reactor. Background Technology
[0002] In recent years, low-temperature plasma technology has emerged in the field of ammonia synthesis due to its advantages such as high efficiency, compatibility with clean energy, and immediate operation. Among these, dielectric barrier discharge plasma, which can generate high-energy electrons under normal pressure and low temperature conditions, thereby exciting the vibrational and fragmentation states of nitrogen molecules, is widely used in non-thermal plasma-driven ammonia synthesis research. In this process, the catalyst's role mainly falls into two categories: Existing plasma-catalyzed coupling pathways mainly include two forms: external catalysis and internal catalysis. External catalysis refers to a catalyst placed outside the discharge zone, where reactants are first activated by the plasma before entering the catalytic bed for conversion. Because the catalyst is not directly in the discharge zone, it cannot fully contact short-lived active species, resulting in a significant reduction in the number of intermediate states actually participating in the catalytic reaction. This leads to the common problems of low activity and poor energy efficiency in external catalysis. In contrast, internal catalysis places the catalyst directly within the discharge zone, allowing plasma-excited active particles to interact with the catalyst surface in a timely manner, which is beneficial for coupling bulk reactions with surface catalysis. The most common existing form of internal catalysis is the fixed-bed internal catalytic structure, where catalyst particles are placed in a packed manner between the electrode and the dielectric. However, fixed-bed structures typically have the following drawbacks: plasma discharges locally in the packed bed, with only the catalyst surface near the discharge microchannels able to fully participate in the reaction, resulting in most of the catalyst being wasted in the "plasma-inaccessible region"; gas flow is restricted in fixed-bed structures, and active species are easily dissipated during transport, leading to low contact efficiency between the plasma and the catalyst; the fixed particle packing state prevents dynamic adjustment of the catalyst exposure area or the plasma interaction position, thus limiting the coupling strength. Summary of the Invention
[0003] Based on this, it is necessary to address the above problems by proposing a plasma realization system, method, medium, and equipment based on a fluidized bed DBD reactor.
[0004] A plasma realization system based on a fluidized bed DBD reactor, the system comprising: a high-voltage pulse drive module and a fluidized bed DBD reactor, wherein the output end of the high-voltage pulse drive module is connected to the fluidized bed DBD reactor.
[0005] The high-voltage pulse drive module is used to convert DC power into high-voltage pulses with preset parameters and output high-voltage pulses to the fluidized bed DBD reactor.
[0006] The fluidized bed DBD reactor includes: a cyclone device, an inner electrode, a metal sheet outer electrode, and a conical reaction chamber.
[0007] The upper part of the cyclone device includes an air inlet, and the lower part includes an air outlet. The air inlet and the air outlet are connected by an oblique channel formed with the radii of the air inlet and the air outlet as a reference. The air inlet of the cyclone device is used to introduce raw material gas and allow the raw material gas to enter the oblique channel.
[0008] The air outlet of the cyclone device is directly opposite the top inlet of the conical reaction chamber, and the central axis of the cyclone device is collinear with the central axis of the conical reaction chamber, so as to allow the raw material gas discharged through the oblique channel of the cyclone device to enter the conical reaction chamber.
[0009] The inner electrode has a hollow cone structure and is electrically connected to the output terminal of the high-voltage pulse drive module. The inner electrode is coaxially disposed inside the conical reaction chamber, and the outer wall of the inner electrode is in close contact with the inner wall of the conical reaction chamber.
[0010] The outer metal electrode is closely attached to the outer surface of the conical reaction chamber, and the outer metal electrode and the inner electrode are arranged in a coaxial nested layout.
[0011] The conical reaction chamber is located between the inner electrode and the outer metal plate electrode. A uniform dielectric barrier discharge region is constructed through the inner electrode and the outer metal plate electrode that is closely attached to the outer surface of the conical reaction chamber. The conical reaction chamber is used to introduce high-voltage pulses and raw material gas that is discharged through the oblique channel of the cyclone device.
[0012] The fluidized bed DBD reactor further includes: an insulating cover, an inner chamber, and an outer chamber; The insulating cover is connected to the output terminal of the high-voltage pulse drive module and is used to seal the inner chamber and the outer chamber. The upper part of the insulating cover includes an air inlet and an air outlet. The air inlet of the insulating cover is connected to the inner chamber and is used to introduce raw material gas. The air outlet of the insulating cover is located on the other side of the insulating cover and is connected to the outer chamber, and is used to discharge the plasma gas after the raw material gas is ionized by discharge.
[0013] The inner chamber covers the air inlet of the cyclone device, which is used to introduce the raw material gas and isolate the raw material gas from the plasma gas after discharge ionization. The upper periphery of the cyclone device is also provided with a product discharge hole, which communicates with the outer chamber. The outer chamber covers the product discharge hole around the periphery of the cyclone device and is used to integrate the plasma gas after the raw material gas is ionized by discharge.
[0014] The top of the inner electrode is fixedly inserted through the center of the reactor's insulating cover to introduce a high-voltage pulse.
[0015] The system also includes: The input terminal of the adjustable pre-regulator and filter circuit module is connected to a DC power supply, and the output terminal is connected to the input terminal of the high-voltage pulse drive module. This module is used to introduce DC power and perform pre-regulation and filtering on the DC power supply.
[0016] The discharge status monitoring module is connected to the output end of the fluidized bed DBD reactor and is used to collect voltage, current, charge-mass characteristics and spectrum data during the discharge process in the uniform dielectric barrier discharge zone to obtain the discharge status.
[0017] The closed-loop control and gas linkage adjustment module is connected to the output of the discharge state monitoring module and is used to adjust the waveform parameters of the high-voltage pulse and the flow rate of the raw material gas according to the discharge state.
[0018] A method for plasma realization based on a fluidized bed DBD reactor, characterized in that it employs the aforementioned system, and the method includes: Convert DC power into high-voltage pulses with preset parameters.
[0019] Voltage, current, charge-mass characteristics, and spectral data are collected during the discharge process in a uniform dielectric barrier discharge region to obtain the discharge state.
[0020] Based on the discharge state, adjust the waveform parameters of the high-voltage pulse and the flow rate of the raw material gas.
[0021] Before converting the DC power supply into a high-voltage pulse with preset parameters, the method further includes: The DC power supply is pre-regulated and filtered to obtain a pre-processed DC power supply.
[0022] Specifically, adjusting the waveform parameters of the high-voltage pulse and the flow rate of the raw material gas according to the discharge state includes: Based on the discharge state, a discharge state curve is generated.
[0023] Determine whether the discharge is in the preset optimal state based on the discharge state curve.
[0024] If the discharge is not in the preset optimal state, adjust the waveform parameters of the high-voltage pulse and the flow rate of the raw material gas.
[0025] A computer-readable storage medium storing a computer program that, when executed by a processor, causes the processor to perform the steps of the method described above.
[0026] A computer device, characterized in that it includes a memory and a processor, the memory storing a computer program, which, when executed by the processor, causes the processor to perform the steps of the method described above.
[0027] The embodiments of the present invention have the following beneficial effects: This invention converts DC power into high-voltage pulses with preset parameters using a high-voltage pulse drive module. The output of this module connects to a fluidized bed DBD reactor, which includes a cyclone device, an inner electrode, a metal sheet outer electrode, and a conical reaction chamber. The cyclone device is coaxially arranged with the conical reaction chamber, its outlet facing the top inlet of the chamber. The inner electrode is coaxially positioned inside the conical reaction chamber, its outer wall parallel to the inner wall. The metal sheet outer electrode is tightly attached to the outer surface of the chamber, forming a coaxial nested arrangement with the inner electrode. The conical reaction chamber is located between the two electrodes. A uniform dielectric barrier discharge region is created by applying high-voltage pulses, while a rotating airflow from the cyclone device is introduced. This integrated design of the cyclone device and the conical reaction chamber achieves a triple effect: a stable rotating flow field, a uniform electric field distribution, and thorough catalyst fluidization. This structure significantly improves the contact efficiency between the catalyst and plasma within the conical reaction chamber, avoiding localized high fields and micro-arc discharges, resulting in more stable discharge, more efficient reaction, and higher catalyst utilization, providing an excellent reaction environment for plasma ammonia synthesis. Attached Figure Description
[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0029] in: Figure 1 A schematic diagram of an embodiment of a plasma realization system based on a fluidized bed DBD reactor provided by the present invention; Figure 2 This is a schematic diagram of the structure of an embodiment of the fluidized bed DBD reactor provided by the present invention; Figure 3 A schematic diagram of an embodiment of the cyclone device provided for the invention; Figure 4 A schematic diagram of another embodiment of the cyclone device provided for the invention; Figure 5 A schematic diagram of another embodiment of a plasma realization system based on a fluidized bed DBD reactor provided by the present invention; Figure 6A schematic flowchart of an embodiment of a plasma realization method based on a fluidized bed DBD reactor provided by the present invention; Figure 7 A schematic diagram of the structure of an embodiment of the device provided by the present invention; Figure 8 A schematic diagram of the structure of an embodiment of the medium provided by the present invention. Detailed Implementation
[0030] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0031] like Figure 1 As shown, Figure 1 This is a schematic diagram of an embodiment of a plasma realization system based on a fluidized bed DBD reactor provided by the present invention. The plasma realization system 10 based on a fluidized bed DBD reactor includes: a high-voltage pulse drive module 11 and a fluidized bed DBD reactor 12, with the output end of the high-voltage pulse drive module connected to the fluidized bed DBD reactor. The high-voltage pulse drive module 11 is used to convert DC power into high-voltage pulses with preset parameters and output high-voltage pulses to the fluidized bed DBD reactor.
[0032] For example, the output of the high-voltage pulse drive module 11 is connected to the fluidized bed DBD reactor 12. A high-voltage pulse drive circuit converts the DC power supply into a high-voltage pulse signal that meets the discharge requirements, providing driving force for the medium barrier discharge in the fluidized bed DBD reactor.
[0033] The fluidized bed DBD reactor 12 includes: a cyclone device, an internal electrode, a metal sheet external electrode, and a conical reaction chamber. The cyclone device has an inlet at the top and an outlet at the bottom, connected by an oblique channel formed with their radii as a reference. The inlet of the cyclone device is used to introduce feed gas into the oblique channel. The outlet of the cyclone device is directly opposite the top inlet of the conical reaction chamber, and the central axis of the cyclone device is collinear with the central axis of the conical reaction chamber, allowing the feed gas discharged through the oblique channel of the cyclone device to enter the conical reaction chamber. The internal electrode has a hollow cone structure and is driven by a high-voltage pulse. The output terminals of the modules are electrically connected. The inner electrode is coaxially arranged inside the conical reaction chamber, and the outer wall of the inner electrode is in close contact with the inner wall of the conical reaction chamber. The outer metal electrode is in close contact with the outer surface of the conical reaction chamber, and the outer metal electrode and the inner electrode are arranged in a coaxial nested layout. The conical reaction chamber is located between the inner electrode and the outer metal electrode. A uniform dielectric barrier discharge region is constructed through the inner electrode and the outer metal electrode in close contact with the outer surface of the conical reaction chamber. The conical reaction chamber is used to introduce high-voltage pulses and raw material gas discharged through the oblique channel of the cyclone device.
[0034] For example, in conjunction with reference Figure 2 , Figure 3 and Figure 4 , Figure 2 This is a schematic diagram of the structure of an embodiment of the fluidized bed DBD reactor provided by the present invention. Figure 3 A schematic diagram of one embodiment of the cyclone device provided for the invention. Figure 4 A schematic diagram of another embodiment of the cyclone device provided for the invention. The fluidized bed DBD reactor 12 includes: a cyclone device, an inner electrode, a metal sheet outer electrode, and a conical reaction chamber. The cyclone device consists of eight oblique channels. The upper part of the cyclone device includes eight air inlets A1-A8, and the lower part includes eight air outlets B1-B8. The air inlets A1-A8 are used for the intake of raw material gas, and the air outlets B1-B8 are used for the raw material gas to enter the conical reaction chamber. The center of the air inlet A1 is directly opposite the center of the air outlet B2. The two are connected by an oblique through-structure based on the radii of the air inlets and outlets, thereby forming a cyclone channel for generating a rotating airflow.
[0035] The inner electrode has a hollow cone structure and is electrically connected to the output terminal of the high-voltage pulse drive module. The inner electrode is coaxially positioned inside the conical reaction chamber, with its outer wall in close contact with the inner wall to create an internal electrode field. The outer metal electrode is in close contact with the outer surface of the conical reaction chamber, and the outer and inner electrodes are arranged coaxially to create an external electrode field and prevent micro-discharge on the outer surface.
[0036] The conical reaction chamber is located between the inner electrode and the outer metal plate electrode. A uniform dielectric barrier discharge region is constructed through the inner electrode and the outer metal plate electrode that is closely attached to the outer surface of the conical reaction chamber. The conical reaction chamber is used to introduce high-voltage pulses and raw material gases that are discharged through the oblique channel of the cyclone device.
[0037] Among them, the channel velocity of the eight oblique channels has a non-zero component in the tangential direction, so that the gas has a non-zero tangential velocity component when it enters the reaction chamber. The raw material gas carries tangential momentum into the conical reaction chamber, forming a stable rotating flow field to drive the catalyst particles to suspend.
[0038] Within the conical reaction chamber, the raw material gas introduced by the cyclone device forms a rotating flow field. The rotating flow field and the electrofluid effect work together to drive the suspension and dispersion of catalyst particles. The suspended catalyst particles act as catalysts for the ionization reaction. Together with the stable electric field constructed by the internal electrode and the external electrode of the metal sheet, a high-voltage pulse is applied by the high-voltage pulse drive module. This induces dielectric barrier discharge in the uniform dielectric barrier discharge region formed in the conical reaction chamber, ionizing the raw material gas and ultimately obtaining plasma gas after the raw material gas has been ionized by the discharge.
[0039] As described above, this invention converts DC power into high-voltage pulses with preset parameters using a high-voltage pulse drive module. The output of this module is connected to a fluidized bed DBD reactor, which includes a cyclone device, an inner electrode, a metal sheet outer electrode, and a conical reaction chamber. The cyclone device and the conical reaction chamber are coaxially arranged, with its outlet facing the top inlet of the chamber. The inner electrode is coaxially positioned inside the conical reaction chamber, with its outer wall parallel to the inner wall. The metal sheet outer electrode is tightly attached to the outer surface of the chamber, forming a coaxial nested arrangement with the inner electrode. The conical reaction chamber is located between the two electrodes. A uniform dielectric barrier discharge region is constructed by applying high-voltage pulses, while a rotating airflow from the cyclone device is simultaneously introduced. This integrated design of the cyclone device and the conical reaction chamber achieves a triple effect: a stable rotating flow field, a uniform electric field distribution, and thorough catalyst fluidization. This structure significantly improves the contact efficiency between the catalyst and plasma within the conical reaction chamber, avoids local high field and micro-arc discharge, makes the discharge more stable, the reaction more efficient, and the catalyst utilization rate higher, providing an excellent reaction environment for plasma ammonia synthesis.
[0040] Continue reading Figure 2 , Figure 3 and Figure 4The fluidized bed DBD reactor also includes: an insulating cover, an inner chamber, and an outer chamber. The insulating cover is connected to the output end of the high-voltage pulse drive module and is used to seal the inner and outer chambers. The upper part of the insulating cover includes an inlet and an outlet. The inlet of the insulating cover communicates with the inner chamber for introducing the feed gas. The outlet of the insulating cover is located on the other side of the insulating cover and communicates with the outer chamber for discharging the plasma gas after the feed gas has been ionized by discharge. Furthermore, the top of the inner electrode is fixedly inserted through the center of the reactor's insulating cover for introducing high-voltage pulses.
[0041] For example, the fluidized bed DBD reactor further includes: an insulating cover, an inner chamber, and an outer chamber; the insulating cover is connected to the output end of the high-voltage pulse drive module and is used to seal the inner chamber and the outer chamber. The upper part of the insulating cover includes an air inlet and an air outlet. The inner chamber and the outer chamber are assembled with the insulating cover as the installation reference, and the inner chamber and the outer chamber are independent of each other and do not communicate with each other, respectively forming a raw material gas inlet channel and a reaction product outlet channel. The upper part of the insulating cover is provided with an installation structure adapted to the inner chamber, and the inner chamber is connected to the air inlet provided on the insulating cover, so that the raw material gas enters the inner chamber through the air inlet and is introduced into the reaction area of the subsequent conical reaction chamber through the air inlet of the cyclone device. The other side of the insulating cover is provided with an installation structure adapted to the outer chamber, and the outer chamber is connected to the air outlet provided on the insulating cover, so that the reaction product enters the outer chamber through the product outlet and is discharged from the reactor through the air outlet.
[0042] Furthermore, the top of the inner electrode is fixedly inserted through the center of the reactor's insulating cover to introduce a high-voltage pulse, thereby achieving high-voltage electrical isolation and overall sealing of the reaction chamber while simultaneously assembling and positioning the inner and outer chambers.
[0043] Continue reading Figure 2 , Figure 3 and Figure 4 The inner chamber is covered by the air inlet of the cyclone device, which is used to introduce the raw material gas and isolate the raw material gas from the plasma gas after discharge ionization. The upper periphery of the cyclone device is also provided with a product discharge hole (outer chamber air hole), which is connected to the outer chamber. The outer chamber covers the product discharge hole around the periphery of the cyclone device and is used to integrate the plasma gas after discharge ionization of the raw material gas.
[0044] For example, the inner chamber covers eight air inlets at the top of the cyclone device, introducing the raw material gas and isolating it from the plasma gas after discharge ionization. After entering the inner chamber through the air inlets, the raw material gas is then guided into the reaction area of the subsequent conical reaction chamber through the air inlets of the cyclone device. A gas flow rate of Q is set at the air inlet, and a single-channel cross-sectional area of A is set. ch The average speed of a single channel is set to V. in The angle between the channel and the axis is set to α(Relative to the radial / axial direction); the effective radius is set to r (the position where the airflow effectively transfers angular momentum after entering the chamber); the tangential velocity component is denoted as v. Therefore, the non-zero component of the channel velocity in the tangential direction of the single-oblique channel is: ; When this component is non-zero, the gas enters the chamber carrying tangential momentum; Therefore, the angular momentum input to the cavity per unit time by a single channel is: ; Where Q is the flow rate of the raw material gas, and V in The average velocity of the inclined channel, α Let be the angle between the oblique channel and the central axis, n be the total number of oblique channels in the cyclone device, and r be the radius of action. ρ g For gas density, l ch It is angular momentum.
[0045] The total angular momentum input from the eight oblique channels is n. l ch The value is usually non-zero, thus establishing and maintaining a rotating flow field within the chamber until it reaches equilibrium through viscous dissipation or outlet friction. The rotating flow field drives the catalyst particles in the conical reaction chamber to suspend; the suspended catalyst particles act as catalysts for the ionization reaction, and the high-voltage pulse triggers a dielectric barrier discharge in the uniform dielectric barrier discharge region formed between the inner electrode and the outer electrode of the metal sheet, causing the raw material gas to be ionized by the discharge to form plasma gas.
[0046] The upper periphery of the cyclone device is also provided with product discharge holes, which communicate with the outer chamber. The outer chamber covers the 12 product discharge holes on the upper periphery of the cyclone device, which are used to collect and export the plasma gas after the raw material gas is ionized by discharge.
[0047] like Figure 5 As shown, Figure 5 This is a schematic diagram of another embodiment of a plasma realization system based on a fluidized bed DBD reactor provided by the present invention. The plasma realization system 10 based on a fluidized bed DBD reactor further includes: a pre-stabilized voltage and filter circuit module 13, a discharge state monitoring module 14, and a closed-loop control and gas linkage regulation module 15. The input terminal of the adjustable pre-regulator and filter circuit module 13 is connected to a DC power supply, and the output terminal is connected to the input terminal of the high-voltage pulse drive module 11. It is used to introduce DC power supply and perform pre-regulation and filtering on the DC power supply.
[0048] The discharge status monitoring module 14 is connected to the output end of the fluidized bed DBD reactor 12 and is used to collect voltage, current, charge-mass characteristics and spectrum data during the discharge process in the uniform dielectric barrier discharge zone to obtain the discharge status.
[0049] The closed-loop control and gas linkage adjustment module 15 is connected to the output of the discharge status monitoring module and is used to adjust the waveform parameters of the high-voltage pulse and the flow rate of the raw material gas according to the discharge status.
[0050] For example, the input terminal of the adjustable pre-regulator and filter circuit module 13 is connected to a DC power supply, and the output terminal is connected to the input terminal of the high-voltage pulse drive module 11. In the adjustable pre-regulator and filter circuit module 13, the DC power supply input is pre-regulated to provide a stable DC bus voltage. At the same time, the voltage ripple and grid interference are suppressed by the inductor-capacitor filter array, providing a stable and low-noise input power supply for the subsequent high-voltage pulse drive.
[0051] The discharge status monitoring module 14 is connected to the output terminal of the fluidized bed DBD reactor 12. The discharge status monitoring module 14 collects voltage, current, charge-mass characteristics, and spectrum data during the discharge process in the uniform dielectric barrier discharge region to obtain the discharge status.
[0052] The closed-loop control and gas linkage adjustment module 15 is connected to the output of the discharge state monitoring module. In the closed-loop control and gas linkage adjustment module 15, a discharge state curve is generated according to the discharge state. The discharge state curve is used to determine whether the discharge is in the preset optimal state. If the discharge is not in the preset optimal state, the waveform parameters of the high-voltage pulse and the flow rate of the raw material gas are adjusted.
[0053] As described above, this invention provides a stable, adjustable, and safe high-voltage drive for fluidized bed DBD discharge through multi-level coordinated control. The system monitors electrical parameters in real time and adjusts pulse parameters and gas flow rate in a closed loop to maintain optimal energy input during the discharge process, significantly improving discharge stability, energy utilization, and reaction controllability.
[0054] like Figure 6 As shown, Figure 6 This is a schematic flowchart illustrating an embodiment of a plasma realization method based on a fluidized bed DBD reactor provided by the present invention. The plasma realization method based on a fluidized bed DBD reactor, employing the above-described system, includes the following steps: S101: Converts DC power supply into a high-voltage pulse with preset parameters.
[0055] S102: Collect voltage, charge, instantaneous current amplitude, and temperature values during the discharge process in the uniform dielectric barrier discharge region.
[0056] S103: Obtain the charge-voltage curve based on the voltage and charge values, and determine the area under the curve based on the charge-voltage curve.
[0057] S104: Adjust the waveform parameters of the high-voltage pulse based on the comparison between the curve area and the target curve area, and the comparison between the instantaneous current amplitude and the target current amplitude.
[0058] S105: If the temperature value is determined to be greater than the target temperature value, the flow rate of the raw material gas will be increased according to the preset rules.
[0059] For example, the raw material gas enters the conical reaction chamber through the oblique channel of the cyclone device. The oblique channel's structural design generates tangential momentum, forming a rotating flow field. This rotating flow field suspends the catalyst particles within the conical reaction chamber, which then act as catalysts for the ionization reaction. The high-voltage pulse drive module 11 converts the DC power supply into a high-voltage pulse with preset parameters, initiating a dielectric barrier discharge in the uniform dielectric barrier discharge region between the inner electrode and the outer electrode of the metal sheet. The raw material gas is ionized in this region to form plasma gas, thus achieving plasma conversion of the raw material gas.
[0060] Furthermore, voltage, charge, instantaneous current amplitude, and temperature values are collected during the discharge process in the uniform dielectric barrier discharge region. A charge-voltage curve is obtained based on the voltage and charge values, and the area under the curve is determined from the charge-voltage curve.
[0061] The curve area and instantaneous current amplitude are used as the main feedback quantities, and preset target curve area, preset target current amplitude, and upper and lower tolerance thresholds are set (target curve area A: tolerance of ±5%; target current amplitude I: tolerance of ±10%). When the feedback quantity does not meet the set tolerance range, it is adjusted in an orderly manner according to the following rules: The waveform parameters of the high-voltage pulse include: peak voltage, pulse frequency, and duty cycle / pulse width. Specifically, the peak voltage adjustment range is 8.0–10.0 kV; single step size is ±0.2–0.5 kV. The pulse frequency f adjustment range is 3–6 kHz; single step size is ±0.2–0.5 kHz. The duty cycle / pulse width D adjustment range is 1–50%; single step size is ±1–3%.
[0062] Furthermore, if the curve area is less than or equal to the preset tolerance (5%) of the target curve area, the peak voltage is increased by 0.2kV first. Furthermore, the pulse frequency and duty cycle / pulse width are increased according to the above-set adjustment range. If the instantaneous current amplitude is greater than the preset tolerance (10%) of the target current amplitude I, the peak voltage will be immediately reduced by 0.5kV.
[0063] Furthermore, the flow rate adjustment range of the raw material gas is set to 0.5L–5 L / min (which can be adjusted according to actual needs or equipment scale); single step size: ±5–10%.
[0064] When the temperature value is determined to be greater than the preset target temperature value, increase the airflow by 10–20% to enhance cooling and turbulence to improve flow field uniformity.
[0065] like Figure 7 As shown, Figure 7 This is a schematic diagram of an embodiment of the device provided by the present invention. The device 20 includes a memory 21 and a processor 22. The memory 21 stores a computer program, and the processor 22 executes the computer program during operation to achieve, for example... Figure 5 and Figure 6 The method shown.
[0066] The specific technical details of the plasma realization method based on a fluidized bed DBD reactor implemented by the above-mentioned device 20 when executing a computer program have been discussed in detail in the above method steps, and therefore will not be repeated here.
[0067] like Figure 8 As shown, Figure 8 This is a schematic diagram of the structure of an embodiment of the medium provided by the present invention. The medium 30 stores at least one computer program 31, which is executed by the processor 22 to perform the following... Figure 5 and Figure 6 The method shown is detailed above and will not be repeated here. In one embodiment, the medium 30 can be a storage chip, hard disk, portable hard disk, USB flash drive, optical disk, or other read / write storage device, or even a server, etc.
[0068] Furthermore, the processes depicted in the accompanying drawings do not necessarily have to be performed in the specific or sequential order shown to achieve the desired result. In some implementations, multitasking and parallel processing are possible or may be advantageous.
[0069] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the embodiments of apparatus, devices, and non-volatile computer-readable storage media are basically similar to the method embodiments, and therefore described more simply; relevant parts can be referred to the descriptions of the method embodiments.
[0070] The apparatus, device, non-volatile computer-readable storage medium and method provided in the embodiments of this specification are corresponding. Therefore, the apparatus, device and non-volatile computer storage medium also have similar beneficial technical effects as the corresponding method. Since the beneficial technical effects of the method have been described in detail above, the beneficial technical effects of the corresponding apparatus, device and non-volatile computer storage medium will not be repeated here.
[0071] The systems, devices, modules, or units described in the above embodiments can be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, a computer can be, for example, a personal computer, laptop computer, cellular phone, camera phone, smartphone, personal digital assistant, media player, navigation device, email device, game console, tablet computer, wearable device, or any combination of these devices.
[0072] For ease of description, the above apparatus is described by dividing it into various functional units. Of course, in implementing this specification, the functions of each unit can be implemented in one or more software and / or hardware components. Those skilled in the art will understand that the embodiments of this specification can be provided as methods, systems, or computer program products. Therefore, the embodiments of this specification can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, the embodiments of this specification can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
[0073] This specification is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this specification. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create a machine for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.
[0074] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1One or more processes and / or boxes Figure 1 The function specified in one or more boxes.
[0075] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.
[0076] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.
[0077] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.
[0078] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information by any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.
[0079] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0080] This specification can be described in the general context of computer-executable instructions that are executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. This specification can also be practiced in distributed computing environments, where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.
[0081] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.
[0082] The above description discloses only preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.
Claims
1. A fluidized bed DBD reactor based plasma implementation system characterized in that, The system comprises: a high-voltage pulse driving module and a fluidized bed DBD reactor, wherein the output end of the high-voltage pulse driving module is connected to the fluidized bed DBD reactor. The high-voltage pulse driving module is used for converting a direct current power supply into a high-voltage pulse with preset parameters and outputting the high-voltage pulse to the fluidized bed DBD reactor. The fluidized bed DBD reactor comprises: a cyclone device, an inner electrode, a metal sheet outer electrode and a conical reaction chamber. The upper part of the cyclone device comprises an air inlet hole, and the lower part comprises an air outlet hole, wherein the air inlet hole and the air outlet hole are connected through a slanting channel formed based on the radii of the air inlet hole and the air outlet hole; the air inlet hole of the cyclone device is used for introducing raw gas so that the raw gas enters the slanting channel. The air outlet hole of the cyclone device is opposite to the top entrance of the conical reaction chamber, and the central axis of the cyclone device is collinear with the central axis of the conical reaction chamber, so as to make the raw gas discharged through the slanting channel of the cyclone device enter the conical reaction chamber. The inner electrode is a hollow cone structure, is electrically connected between the output end of the high-voltage pulse driving module, is coaxially arranged inside the conical reaction chamber, and is tightly attached to the inner wall of the conical reaction chamber. The metal sheet outer electrode is tightly attached to the outer surface of the conical reaction chamber, and is coaxially nested with the inner electrode. The conical reaction chamber is located between the inner electrode and the metal sheet outer electrode, and a uniform dielectric barrier discharge zone is formed by the inner electrode and the metal sheet outer electrode tightly attached to the outer surface of the conical reaction chamber; the conical reaction chamber is used for introducing the high-voltage pulse and the raw gas discharged through the slanting channel of the cyclone device.
2. The fluidized bed DBD reactor based plasma implementation system of claim 4, wherein, The fluidized bed DBD reactor further comprises: an insulating cover, an inner chamber and an outer chamber. The insulating cover is connected to the output end of the high-voltage pulse driving module, is used for sealing the inner chamber and the outer chamber, and comprises an air inlet hole and an air outlet hole in the upper part; the air inlet hole of the insulating cover is communicated with the inner chamber, is used for introducing raw gas; and the air outlet hole of the insulating cover is arranged on the other side of the insulating cover, is communicated with the outer chamber, and is used for discharging plasma gas after the raw gas is discharged and ionized.
3. The fluidized bed DBD reactor based plasma implementation system of claim 2, wherein, The inner chamber covers the air inlet hole of the cyclone device, is used for introducing the raw gas, and isolates the raw gas from the plasma gas after the raw gas is discharged and ionized. The upper periphery of the cyclone device is further provided with a product discharge hole, which is communicated with the outer chamber; and the outer chamber covers the product discharge hole of the periphery of the cyclone device, and is used for integrating the plasma gas after the raw gas is discharged and ionized.
4. The fluidized bed DBD reactor based plasma implementation system of claim 2, wherein, The top end of the inner electrode is fixedly penetrated through the central position of the reactor insulating cover, and is used for introducing the high-voltage pulse.
5. The fluidized bed DBD reactor based plasma implementation system of claim 1, wherein, The system further comprises: A regulating pre-stabilization and filtering circuit module is connected to the input end of the direct current power supply and the output end of the high-voltage pulse driving module, is used for introducing the direct current power supply, and performs pre-stabilization and filtering processing on the direct current power supply; A discharge state monitoring module is connected to the output end of the fluidized bed DBD reactor, is used for collecting voltage, current, charge-mass characteristic and frequency spectrum data in the discharge process of the uniform dielectric barrier discharge zone, and obtaining the discharge state. A closed-loop control and gas linkage adjustment module is connected to the output end of the discharge state monitoring module, and is used to adjust the waveform parameters of the high-voltage pulse and the gas flow of the raw material gas according to the discharge state.
6. A method of plasma realization based on fluidized bed DBD reactor characterized by, The method comprises the following steps of: Converting the direct current power supply into a high-voltage pulse with preset parameters; Collecting voltage values, charge values, instantaneous current amplitude values and temperature values during the discharge process of the uniform dielectric barrier discharge area; Obtaining a charge-voltage curve according to the voltage values and the charge values, and determining a curve area according to the charge-voltage curve; Adjusting the waveform parameters of the high-voltage pulse according to the comparison between the curve area and a target curve area and the comparison between the instantaneous current amplitude values and a target current amplitude value; Determining that the temperature value is greater than a target temperature value, and then increasing the gas flow of the raw material gas according to a preset rule.
7. The fluidized bed DBD reactor based plasma implementation method according to claim 6, characterized in that, Before the step of converting the direct current power supply into a high-voltage pulse with preset parameters, the method further comprises the following steps of: Pre-stabilizing and filtering the direct current power supply to obtain a pre-processed direct current power supply.
8. The fluidized bed DBD reactor based plasma implementation method according to claim 1, wherein, The step of adjusting the waveform parameters of the high-voltage pulse according to the comparison between the curve area and a target curve area and the comparison between the instantaneous current amplitude values and a target current amplitude value specifically comprises the following steps of: If the curve area is less than or equal to a preset tolerance of the target curve area, then increasing the peak voltage according to a preset rule; If the instantaneous current amplitude value is greater than a preset tolerance of the target current amplitude value, then decreasing the peak voltage according to a preset rule. 9.A computer readable storage medium storing a computer program, wherein the computer program is executed by a processor to make the processor perform the steps of the method according to any one of claims 5 to 8.
10. A computer device, comprising: A device comprising a memory and a processor, wherein the memory stores a computer program, and the computer program is executed by the processor to make the processor perform the steps of the method according to any one of claims 5 to 8.