MEMS detection assembly and electronic atomization device

Abstract

The invention discloses an MEMS detection assembly and an electronic atomization device. The MEMS detection assembly comprises a packaging substrate, a metal shell and an MEMS device. Wherein the metal shell is arranged on the packaging substrate, and an accommodating cavity is formed between the metal shell and the packaging substrate; air holes are formed in the cavity wall of the containing cavity, and the interior of the containing cavity is communicated with the exterior of the containing cavity through the air holes; the MEMS device is arranged on the packaging substrate and is positioned in the accommodating cavity; the MEMS device comprises an MEMS vibrating diaphragm, and the MEMS vibrating diaphragm and a preset cavity wall area of the containing cavity are arranged in a spaced mode so that a capacitor for detection can be formed between the MEMS vibrating diaphragm and the preset cavity wall area.

Description

Technical Field

[0001] This application relates to the field of airflow detection, and more specifically to a MEMS detection component and an electronic atomization device. Background Technology

[0002] Electronic atomizers are widely used in inhaled medical devices and new tobacco products. The microphone, as the core component of an electronic atomizer, significantly impacts the atomization effect and the subjective experience for different users. Currently, the sensors in inhaled electronic atomizers primarily use electret capacitors. However, the thin-film plates of electret capacitors are prone to charge decay, thus shortening their lifespan. Summary of the Invention

[0003] This application is made to address at least one of the aforementioned problems. According to a first aspect of this application, a MEMS detection assembly is provided, comprising: a packaging substrate, a metal housing, and a MEMS device; wherein the metal housing is disposed on the packaging substrate, and a receiving cavity is formed between the metal housing and the packaging substrate; vents are provided on the cavity wall of the receiving cavity, the vents communicating between the interior and exterior of the receiving cavity; the MEMS device is disposed on the packaging substrate and located within the receiving cavity; the MEMS device includes a MEMS diaphragm, the MEMS diaphragm being spaced apart from a predetermined cavity wall region of the receiving cavity to form a detection capacitor between the MEMS diaphragm and the predetermined cavity wall region.

[0004] In one embodiment of this application, the MEMS device further includes: a substrate with an internal cavity, the MEMS diaphragm disposed on the substrate, the substrate disposed on the packaging substrate, and the cavity located between the packaging substrate and the MEMS diaphragm; the preset cavity wall region is located on the metal housing, and the vent includes at least one first vent and at least one second vent; wherein the first vent is disposed on the packaging substrate and communicates with the outside of the cavity and the receiving cavity; the second vent is disposed on the metal housing.

[0005] In one embodiment of this application, the second vent and the preset cavity wall region are located in different regions of the metal housing.

[0006] In one embodiment of this application, the preset cavity wall region is located on the packaging substrate, and the MEMS device is provided with a first pad, which is directly connected to a second pad of the packaging substrate; the vent includes at least one first vent and at least one second vent; wherein the first vent is disposed on the preset cavity wall region, and the second vent is disposed on the metal housing.

[0007] In one embodiment of this application, the vent further includes at least one third vent and at least one fourth vent; wherein the third vent is disposed on the packaging substrate and offset from the MEMS diaphragm, and the total cross-sectional area of ​​all the third vents is greater than the total cross-sectional area of ​​all the first vents; the fourth vent is disposed on the metal housing and offset from the MEMS diaphragm, and the total cross-sectional area of ​​all the fourth vents is greater than the total cross-sectional area of ​​all the second vents.

[0008] In one embodiment of this application, a partition is provided inside the receiving cavity, which divides the receiving cavity into a first chamber and a second chamber; wherein, the MEMS device is located in the first chamber, and the first vent and the second vent are both connected to the outside of the first chamber and the receiving cavity; the third vent and the fourth vent are both connected to the outside of the second chamber and the receiving cavity.

[0009] In one embodiment of this application, the first pore and / or the third pore are formed by metallized through-holes disposed in the packaging substrate.

[0010] In one embodiment of this application, the metal housing includes a top plate and a side plate; wherein the top plate is disposed opposite to the encapsulation substrate; the side plate is connected between the edges of the top plate and the encapsulation substrate; the second vent and the fourth vent are both disposed on the top plate; and when the preset cavity wall region is located on the metal housing, the preset cavity wall region is located on the top plate.

[0011] In one embodiment of this application, the preset cavity wall region is grounded, and a signal processing circuit is disposed on the packaging substrate, the signal processing circuit being electrically connected to the MEMS diaphragm.

[0012] According to a second aspect of this application, an electronic atomization device is also provided, the electronic atomization device comprising: any of the MEMS detection components described above.

[0013] According to the MEMS detection component and electronic atomization device provided in the embodiments of this application, a novel MEMS detection component is provided. The MEMS device only has a MEMS diaphragm, and a preset cavity wall region spaced apart from the MEMS diaphragm is used as a back electrode. A detection capacitor is formed between the MEMS diaphragm and the preset cavity wall region. Compared with electret capacitors, the plates of the detection capacitor are less prone to charge decay, thereby improving the working life of the detection capacitor. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 This is a three-dimensional structural schematic diagram of a MEMS detection component according to an embodiment of this application;

[0016] Figure 2 This is a schematic diagram of the structure of a detection capacitor shown in one embodiment of this application;

[0017] Figures 3-6 This is a schematic diagram of the structure of a MEMS device according to an embodiment of this application;

[0018] Figure 7 and Figure 8 These are schematic diagrams of the top and bottom metal layers of a packaging substrate according to an embodiment of this application.

[0019] Figures 9-11 This is a schematic diagram of the structure of a metal casing according to an embodiment of this application;

[0020] Figures 12-13 This is a schematic diagram of the structure of a MEMS detection component without a partition, as shown in one embodiment of this application;

[0021] Figures 14-17 This is a schematic diagram of the structure of a MEMS detection component with a partition, as shown in one embodiment of this application.

[0022] Figure 18 This is a schematic diagram of the structure of a MEMS detection component with a preset cavity wall region located on a packaging substrate, as shown in an embodiment of this application.

[0023] Figure label:

[0024] 10-Packaging substrate; 11-Top metal layer; 111-Second pad; 112-Solder ring

[0025] 12-Bottom Metal Layer; 121-Ground Pad; 122-Output Pad; 123-Sealing Welding Ring

[0026] 20-Metal casing 21-Top plate 22-Side plate 23-Separator 30-MEMS device

[0027] 31-MEMS diaphragm; 32-substrate; 33-cavity; 34-passivation protective layer; 35-first pad

[0028] 36-Metal lead wire; 40-Receiving cavity; 41-Preset cavity wall region; 42-First chamber

[0029] 43-Second chamber 51-First vent 52-Second vent 53-Third vent 54-Fourth vent Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this application more apparent, exemplary embodiments according to this application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of this application, and not all embodiments of this application. It should be understood that this application is not limited to the exemplary embodiments described herein. Based on the embodiments of this application described herein, all other embodiments obtained by those skilled in the art without inventive effort should fall within the protection scope of this application.

[0031] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with this application.

[0032] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art.

[0033] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, confirm the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0034] To fully understand this application, a detailed structure will be presented in the following description to illustrate the technical solution proposed in this application. Optional embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0035] Electronic atomizers are widely used in inhaled medical devices and new tobacco products. The microphone, as the core component of an electronic atomizer, significantly impacts the atomization effect and the subjective experience of different users. The airflow sensor, a core component of inhaled electronic atomizers, is crucial for detecting inhaled airflow. The airflow sensor not only affects the working state of the electronic atomizer but also greatly influences the user's subjective experience. Therefore, the airflow sensor is essential for the stability and reliability of electronic atomizer operation. Most airflow sensors used for detecting the output airflow in electronic atomizers are capacitive. They utilize the displacement of the movable plates of a detection capacitor caused by airflow impact, resulting in a change in the capacitor's capacitance. This change in capacitance reflects the change in airflow, thus achieving airflow detection. Specifically, the change in potential generated by the change in the distance between the capacitor plates generates a sensitivity to changes in airflow impact, thereby achieving the airflow detection function. Currently, there are two main types of products based on this principle, briefly described below:

[0036] 1. Electret capacitor

[0037] Electret capacitors play a crucial role in the transmission of airflow and sound signals. The sensing capacitor used in electret microphones is an electret capacitor, which comprises a polarizable electret film plate and a rigid back plate. These two plates together constitute the sensing capacitor. Under the influence of a polarization voltage, the electret film plate acquires a charge Q. Simultaneously, under external pressure, according to the definition of static capacitance, C = εS / 4πkd, the distance between the plates of the sensing capacitor changes, resulting in a potential change. This potential change reflects the change in the capacitance value of the sensing capacitor, thus characterizing the magnitude of the external pressure signal.

[0038] 2. MEMS capacitors

[0039] MEMS capacitors, as discrete semiconductor devices manufactured based on microelectromechanical systems (MEMS), offer significant advantages in performance and stability, and their structure is similar to that of electret capacitors. The difference lies in the fact that, to ensure stable operation, MEMS capacitors utilize an additional charge pump circuit to power one of their plates, while the other plate serves as the signal output plate. In other words, MEMS capacitors, as small and highly consistent MEMS devices, are excellent for sensing airflow changes, and due to size limitations, their performance has significant room for improvement compared to electret capacitors.

[0040] The main drawbacks of the related technologies are as follows:

[0041] 1. Poor thermal stability: Currently, mainstream electret capacitors use thin films of electret materials as movable plates, which are easily affected by temperature, resulting in severe attenuation of the charge on the surface of the thin film electrode of the electret capacitor, thus affecting the working life of the electret capacitor.

[0042] 2. Poor reliability: The electret capacitor lacks anti-adhesion treatment for the thin-film electrode, making it impossible to prevent accidental triggering of the e-cigarette's self-starting under circumstances such as drops or vibrations. This results in significant operational risks for the e-cigarette. For example, the electret capacitor is susceptible to interference from signal sources other than the trigger signal. In environments such as vibration, drops, or low pressure, the e-cigarette may be accidentally triggered to continue operating, directly impacting its operational status and posing a risk of short circuits, fires, and other serious consequences, thus leading to poor reliability.

[0043] 3. Poor consistency: Electret capacitors are assembled using mechanical equipment, resulting in significant differences in product consistency, thus leading to poor consistency between different electret capacitors.

[0044] To address at least some of the technical problems in the aforementioned related technologies, this application proposes the following embodiments.

[0045] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0046] First, let me introduce the application scenario of the MEMS detection component illustrated in this application. This MEMS detection component is used in an electronic atomization device to detect changes in air pressure in the airflow.

[0047] refer to Figure 1 , Figure 2 and Figure 3 This application provides a MEMS detection component, which includes: a packaging substrate 10, a metal housing 20, and a MEMS device 30; wherein, the metal housing 20 is disposed on the packaging substrate 10, and a receiving cavity 40 is formed between the metal housing 20 and the packaging substrate 10; the cavity wall of the receiving cavity 40 is provided with vents, and the vents connect the interior and exterior of the receiving cavity 40; the MEMS device 30 is disposed on the packaging substrate 10 and located within the receiving cavity 40; the MEMS device 30 includes a MEMS diaphragm 31, which is spaced apart from a predetermined cavity wall region 41 of the receiving cavity 40 to form a detection capacitor between the MEMS diaphragm 31 and the predetermined cavity wall region 41.

[0048] In the above-described scheme, a novel MEMS detection component is provided. The MEMS device 30 only has a MEMS diaphragm 31 and does not have a back electrode. Instead, a preset cavity wall region 41, which is directly opposite to and spaced apart from the MEMS diaphragm 31, serves as the back electrode. A detection capacitor is formed between the MEMS diaphragm 31 and the preset cavity wall region 41. Compared to electret capacitors, the plates of the detection capacitor are less prone to charge decay, thereby improving the working life of the detection capacitor. Furthermore, MEMS capacitors in related technologies are based on microelectromechanical systems (MEMS) manufacturing processes, which are complex and costly. Compared to related technologies that use MEMS capacitors, this application eliminates the back electrode in the MEMS capacitor, simplifying the structure of the MEMS device 30 and thus reducing costs. The various structures described above will be described in detail below with reference to the accompanying drawings.

[0049] When setting up the packaging substrate 10, any circuit board can be used as the packaging substrate 10. For example, the circuit board can be, but is not limited to, a PCB circuit board. (See reference...) Figure 1 , Figure 7 and Figure 8 The packaging substrate 10 has at least one metal layer, each metal layer has metal traces, and metallized vias are provided between different metal layers for electrical connection. For example, the packaging substrate 10 includes a top metal layer 11 and a bottom metal layer 12, wherein a MEMS device 30 is disposed on and electrically connected to the top metal layer 11.

[0050] For example, refer to Figure 1 , Figure 7 and Figure 8The packaging substrate 10 has a top metal layer 11 (TOP layer) and a bottom metal layer 12 (BOTTOM layer). The top metal layer 11 is used for fixing and protecting the MEMS device 30, and for transmitting signals to the bottom metal layer 12. The bottom metal layer 12 is used for signal transmission and for soldering and mounting the MEMS detection components. Exemplarily, the top metal layer 11 also has a first pad 35 for electrical connection or fixing. Preferably, the material of the first pad 35 is nickel-palladium-gold or nickel-gold. For example, the first pad 35 includes a nickel metal layer, a palladium-gold layer, and a copper foil, wherein the thickness of the nickel metal layer is 4–10 μm, and the thickness of the palladium-gold layer is 0.07–0.18 μm. The nickel metal layer and palladium-gold layer are deposited on the copper foil, and the copper foil thickness is greater than 20 μm. Furthermore, the first pad 35 is connected to the metallized via of the packaging substrate 10. Electrical contact between the top metal layer 11 and the bottom metal layer 12 can be achieved through this metallized via. The material of the metallized via can be copper, with a thickness of 12 μm or more. The plating can be deposited using electroplating or electroless nickel-palladium-gold deposition. The diameter of the metallized via can be, but is not limited to, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, or 0.6 mm. For example, an insulating layer is provided on the top metal layer 11. This insulating layer protects the electrical structures on the circuit board, preventing electrical failures and short circuits. This insulating layer is typically made of green epoxy or acrylic resin, but can also be made of polyimide or other insulating materials.

[0051] The metal casing 20 can be made from any metal material. The metal casing 20 is disposed on the packaging substrate 10, as shown in the reference diagram. Figure 1 , Figure 9 , Figure 10 , Figure 11 and Figure 12 The opening of the metal housing 20 is fastened to the encapsulation substrate 10, thereby forming a receiving cavity 40 between the metal housing 20 and the encapsulation substrate 10. Exemplarily, the metal housing 20 has a top plate 21 disposed substantially parallel to the encapsulation substrate 10, and side plates 22 connecting the edge of the top plate 21 and the edge of the encapsulation substrate 10. Exemplarily, the top plate 21 may be rectangular in shape, the encapsulation substrate 10 may also be rectangular in shape, and there are four side plates 22, each side plate 22 connecting one edge of the top plate 21 and the encapsulation substrate 10.

[0052] For example, refer to Figure 1 , Figure 9 , Figure 10 , Figure 11 and Figure 12The metal housing 20 can be a shielding structure, and its material can include metals such as copper, iron, and aluminum. In a preferred embodiment, the metal housing 20 can be made of Kovar alloy, a high-strength, corrosion-resistant metal alloy typically composed of elements such as aluminum, titanium, and magnesium. It possesses excellent mechanical properties and high-temperature, high-pressure stability, making it an ideal material for manufacturing high-strength and conductive electronic devices in the electronics industry. Therefore, the excellent mechanical properties and high-temperature, high-pressure stability of Kovar alloy can be utilized to improve the performance of MEMS detection components.

[0053] For example, refer to Figure 1 and Figure 7 When forming a receiving cavity 40 between the packaging substrate 10 and the metal housing 20, a welding ring 112 can be provided at the edge of the packaging substrate 10. The thickness of the metal housing 20 can be determined by the width of the welding ring 112 of the packaging substrate 10. For example, the thickness of the metal housing 20 is 0.08–0.13 mm, and the width of the welding ring 112 can also be 0.08–0.13 mm, thereby achieving a welding connection between the edge of the metal housing 20 and the edge of the packaging substrate 10. In a more preferred embodiment, refer to… Figure 1 and Figure 7 The metal housing 20 may also have a flange structure at its edge, which can increase the welding strength between the metal housing 20 and the packaging substrate 10. The solderability of the metal housing 20 is determined by the plating material of the metal housing 20. For example, the plating material can be, but is not limited to, copper, iron, aluminum, or Kovar alloy. A nickel or gold plating layer can be formed on the surface of the metal housing 20, wherein the nickel plating layer thickness can be 3-8 μm, and the gold plating layer thickness can be 0.05-0.10 μm. Of course, in other embodiments, the metal housing 20 and the packaging substrate 10 can be bonded together using an adhesive material to form a receiving cavity 40. Specifically, the metal housing 20 is fixed to the packaging substrate 10 by an adhesive material, and the entire device manufacturing process is relatively simple.

[0054] refer to Figure 1 Furthermore, vents are provided on the cavity wall of the receiving cavity 40, connecting the interior and exterior of the receiving cavity 40. This allows the airflow to be measured to enter the receiving cavity 40, causing the MEMS diaphragm 31 to elastically deform according to the air pressure of the airflow, thereby changing the capacitance value of the detection capacitor and reflecting the pressure change of the airflow. The vents can be located on the packaging substrate 10 or on the metal housing 20.

[0055] When setting up MEMS device 30, refer to Figures 1-6 , Figure 15The MEMS device 30 is disposed on the packaging substrate 10 and located within the receiving cavity 40. The MEMS device 30 includes a MEMS diaphragm 31, which is spaced apart from a predetermined cavity wall region 41 of the receiving cavity 40 to form a detection capacitor between the MEMS diaphragm 31 and the predetermined cavity wall region 41. For example, the MEMS diaphragm 31 and the predetermined cavity wall region 41 are directly opposite each other and spaced apart, i.e., the MEMS diaphragm 31 and the predetermined cavity wall region 41 are substantially parallel to each other to form the detection capacitor.

[0056] Regarding the location of the preset cavity wall region 41, the preset cavity wall region 41 can be located on the metal housing 20, on the packaging substrate 10, or even partially on the metal housing 20 and partially on the packaging substrate 10. Specifically, the MEMS device 30 only has a MEMS diaphragm 31 and does not have a back electrode plate. Instead, the preset cavity wall region 41, which is directly opposite to and spaced apart from the MEMS diaphragm 31, serves as the back electrode plate structure. A detection capacitor is formed between the MEMS diaphragm 31 and the preset cavity wall region 41. Therefore, compared with the related technology that uses a MEMS capacitor, the embodiment of this application eliminates the back electrode plate in the MEMS capacitor, simplifies the structure of the MEMS device 30, and reduces costs. Moreover, compared with electret capacitors, the plates of the detection capacitor are less prone to charge decay, thereby improving the working life of the detection capacitor.

[0057] For example, see references to Figures 3-6 The schematic diagram of the MEMS device 30 shown can be described in the following specific process flow:

[0058] (1) Provide a wafer and clean it to remove the protective layer of Al2O3 and glycerol mixture adhering to the wafer surface. The cleaning process can include any of the following methods: dry cleaning, wet cleaning, RCA cleaning, dilution chemical cleaning, IMEC cleaning, ultrasonic cleaning, vapor phase cleaning, plasma cleaning, etc.

[0059] (2) The wafer is oxidized to form a protective film on the wafer surface, which protects the wafer from chemical impurities, prevents leakage current from entering the circuit, prevents diffusion during ion implantation, and also prevents the wafer from slipping during etching. Preferably, this process can be carried out at a high temperature of 800-1200℃ to form a uniform silicon oxide film.

[0060] Alternatively, any process, such as thermal oxidation, plasma enhanced chemical vapor deposition (PECVD), or electrochemical anodizing, can be used to form a silicon dioxide protective film.

[0061] (3) Polycrystalline silicon thin film deposition and ion implantation: A polycrystalline silicon thin film structure is formed using LPCVD (Low Pressure Chemical Vapor Deposition) technology. Optionally, a graphene film can be deposited on the surface of the polycrystalline silicon thin film structure.

[0062] (4) Polysilicon etching is performed to form a MEMS diaphragm 31. The MEMS diaphragm 31 serves as an effective active electrode area for the capacitor, and metallization pre-reserved contact points are also formed on the MEMS diaphragm 31. During the polysilicon etching process, the shape of the MEMS diaphragm 31 can be arbitrary. Optionally, an opening venting structure can also be formed on the MEMS diaphragm 31 to adjust the sensitivity of the detection capacitor.

[0063] (5) A passivation protective layer 34 is deposited. The material of the passivation protective layer 34 can be silicon nitride or silicon dioxide and other non-conductive materials. As a passivation protective layer 34, it is used for insulation protection.

[0064] (6) Electrode pads are etched based on the metallized reserved contact points to form the first pad 35. The first pad 35, connected to the metallized reserved contact points, is the I / O interface between the MEMS diaphragm 31 and the outside world. The MEMS device 30 has one or more first pads 35, one of which is connected to the metallized reserved contact points to lead out the sensing signals of the MEMS diaphragm 31; the other one or more first pads 35 are used to fix or ground the MEMS device 30.

[0065] (7) Thinning: Based on the MEMS diaphragm 31 formed above, the thickness of the wafer is reduced to more than 500 μm;

[0066] (8) ICP lithography and etching to form a substrate 32 with an internal cavity 33.

[0067] refer to Figures 3-6The substrate 32 can be, but is not limited to, a silicon substrate 32 or a silicon carbide substrate 32, meaning the substrate 32 material can be silicon, silicon carbide, or other materials. The overall thickness of the MEMS device 30 is generally greater than 500 μm; optionally, the thickness of the MEMS device 30 can be 500 μm, 550 μm, or 600 μm. The MEMS diaphragm 31 can be made of conductive materials such as polycrystalline silicon or graphene. The MEMS diaphragm 31 adopts a thin-film structure, and its thin-film structure can have any thickness value such as 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, or 0.6 μm. For example, a passivation protection layer 34 can also be provided on the MEMS diaphragm 31. The material of the passivation protection layer 34 can be silicon nitride or silicon dioxide, and optionally, the thickness of the passivation protection layer 34 can be any thickness such as 0.3 μm, 0.35 μm, or 0.4 μm. Of course, the passivation protection layer 34 can also be a natural oxide layer of silicon dioxide for insulating protection. The cross-sectional shape of the pad can be any graphic metallization shape, such as, but not limited to, a circle, a square, or an octagon. When the cross-sectional shape of the pad is circular, the diameter of the circular pad can be no less than 60 μm to ensure a stable and reliable electrical connection or fixation with the package substrate 10.

[0068] The following examples illustrate the structural configuration when the preset cavity wall region 41 is located on the metal housing 20 and the structural configuration when it is located on the packaging substrate 10.

[0069] In one example, reference Figure 1 , Figure 13 , Figures 15-17 The preset cavity wall region 41 is located on the metal housing 20. In this embodiment, the MEMS device 30 disposed on the packaging substrate 10 is a single-layer film structure consisting only of a MEMS diaphragm 31, with the metal housing 20 disposed above it. The area on the metal housing 20 directly opposite the MEMS diaphragm 31 is defined as the preset cavity wall region 41. The preset cavity wall region 41 and the MEMS diaphragm 31 constitute the detection capacitor of the detection capacitor portion. Under pressure, the single-layer MEMS diaphragm 31 undergoes elastic deformation, causing a change in the capacitance value of the detection capacitor, which acts as a movable capacitor. The subsequent detection circuit can determine and output the change in the static capacitance value (the capacitance value of the detection capacitor when the MEMS diaphragm 31 has not deformed). The capacitance value of the detection capacitor in a static state can be adjusted by controlling the height between the MEMS diaphragm 31 and the metal housing 20, and the size of the MEMS diaphragm 31. For example, the height between the MEMS diaphragm 31 and the metal housing 20 can be controlled at the micrometer level, and the size of the MEMS diaphragm 31 can be set to be extremely small, thereby allowing the MEMS device 30 to be designed to be extremely small.

[0070] Since the MEMS device 30 only has a single-layer film structure MEMS diaphragm 31, there is no need to fabricate a back electrode plate in the MEMS device 30, resulting in a simpler structural design. For example, a preset cavity wall region 41 can be grounded to provide a stable zero potential. For example, the preset cavity wall region 41 can be grounded in parallel with the non-preset cavity wall region of the metal housing 20. For example, the metal housing 20 and the packaging substrate 10 are connected by a solder ring 112. In this case, the grounding wire of the top metal layer 11 of the packaging substrate 10 can be electrically connected to the grounding pad 121 of the bottom metal layer 12 through a metallized via inside the packaging substrate 10, thereby enabling the grounding wire of the top metal layer 11 of the packaging substrate 10 to be grounded when the grounding pad 121 of the packaging substrate 10 is grounded. The MEMS diaphragm 31 can be electrically connected to the second pad 111 on the packaging substrate 10 via the first pad 35 on the MEMS device 30 and the bonding metal lead 36. Furthermore, the MEMS diaphragm 31 is also connected to the output pad 122 on the bottom metal layer 12 via other traces and metallized vias on the packaging substrate 10 to transmit the capacitance signal of the detection capacitor. The above design is simple, reducing the design difficulty of the MEMS device 30 and fully utilizing the component resources of the MEMS detection assembly. The metal housing 20 is reused, providing not only shielding and protective support for the internal MEMS device 30 but also serving as a plate component of the detection capacitor. This simplifies the structure of the detection capacitor and makes it easy to implement.

[0071] For example, refer to Figure 1 , Figures 3-6 , Figure 13 and Figure 15 The MEMS device 30 may further include: a substrate 32 with an internal cavity 33, a MEMS diaphragm 31 disposed on the substrate 32, the substrate 32 disposed on the packaging substrate 10, and the cavity 33 located between the packaging substrate 10 and the MEMS diaphragm 31. The substrate 32 serves as a carrier for supporting the MEMS diaphragm 31 during semiconductor fabrication. For example, the substrate 32 has an internal cavity 33, and the edge of the MEMS diaphragm 31 is disposed on the surface of the substrate 32 and suspended in the cavity 33, thereby enabling elastic deformation. In this case, a preset cavity wall region 41 may be located on the metal housing 20. For example, the preset cavity wall region 41 may be located on the top plate 21 of the metal housing 20, thereby increasing the area of ​​the MEMS diaphragm 31 and the preset cavity wall region 41. Furthermore, by controlling the thickness of the substrate 32 and the distance between the top plate 21 and the packaging substrate 10, the distance between the MEMS diaphragm 31 and the preset cavity wall region 41 can be controlled to adjust the capacitance value of the detection capacitor when the MEMS diaphragm 31 is substantially undeformed.

[0072] For example, refer to Figure 9 , Figure 12 , Figure 14 and Figure 16 The vents at this time may include at least one first vent 51 and at least one second vent 52. Each first vent 51 is disposed on the packaging substrate 10, and each first vent 51 connects the cavity 33 and the outside of the receiving cavity 40. That is, each first vent 51 is disposed on the packaging substrate 10 in a region opposite to the MEMS diaphragm 31, so that the airflow to be measured can enter one side of the packaging substrate 10 through the first vent 51, or the airflow in the cavity 33 can be discharged from the first vent 51. For example, the number of first vents 51 can be any number, such as 1, 2, or 3. For example, each second vent 52 is disposed on the metal housing 20, that is, the second vent 52 is located on the other side of the MEMS diaphragm 31, so that the airflow to be measured from the top plate 21 side of the metal housing 20 can flow in through the second vent 52, or the airflow in the receiving cavity 40 can flow out through the second vent 52. For example, the number of second vents 52 can be any number, such as 1, 2, or 3. The first vent 51 and the second vent 52 are used to allow airflow into the receiving cavity 40 so that the MEMS diaphragm 31 can detect the air pressure difference on both sides of the MEMS diaphragm 31. The deformation of the MEMS diaphragm 31 is not caused by the impact of the airflow entering from the first vent 51 and the second vent 52, but by the bending of the MEMS diaphragm 31 due to the air pressure difference on both sides of the MEMS diaphragm 31, which changes the capacitance value of the detection capacitor. The air pressure difference on both sides of the MEMS diaphragm 31 is detected by the change in capacitance value.

[0073] For example, refer to Figure 1The second vent 52 and the preset cavity wall region 41 are located in different areas of the metal housing 20. Specifically, the second vent 52 is not provided on the preset cavity wall region 41, thus forming a detection capacitor structure with a larger effective area. Traditional MEMS capacitors, due to the use of porous backplate structures, typically have a small effective area for detection, with capacitance values ​​usually ranging from 0.8 to 1 pF. This significantly impacts the accuracy of capacitance detection, occasionally resulting in trigger failures and affecting user experience. In this embodiment, the metal housing 20 is used as the backplate structure for the detection capacitor, resulting in a larger effective area and a capacitance increase of over 50% compared to traditional structures, which is more beneficial for signal detection. Addressing the issue of low detection accuracy in the extremely small size of traditional MEMS capacitors, this application achieves a large capacitor design in a small size through the above design, providing an feasible solution for miniaturized design of pressure-capacitance change detection. Furthermore, in a more preferred embodiment, the air vents on the metal housing 20 are located in an area outside the preset cavity wall area 41, which can ensure a larger effective area for the capacitor, thereby forming a detection capacitor structure with a larger effective area. This is beneficial for accurate trigger signal detection, thereby alleviating the problem of accidental triggering of the e-atomizer caused by external environmental factors such as drops and vibrations. It can also improve the failure problem caused by the occasional inability to trigger the e-atomizer due to the small capacitance value of the detection capacitor.

[0074] For example, refer to Figure 1 , Figures 3-6The MEMS device 30 is provided with a first pad 35. When the preset cavity wall region 41 is located on the metal housing 20, the first pad 35 can be electrically connected to the second pad 111 on the packaging substrate 10 through the metal lead 36. For example, the number of first pads 35 can be one or more. One first pad 35 is electrically connected to the MEMS diaphragm 31 to transmit the signal from the MEMS diaphragm 31. The other first pads 35 can be used to fix the MEMS device 30. For example, the MEMS device 30 is provided with four first pads 35. One of the four first pads 35 is connected to the MEMS diaphragm 31 to transmit the signal from the MEMS diaphragm 31, completing the airflow detection function. The extra three first pads 35 are compatible pads, designed not only as spare pads for connecting to the MEMS diaphragm 31, but also for fixing the MEMS device 30 to the packaging substrate 10, combining both utility and fixing functions. For example, the first pad 35 is disposed on the passivation protection layer 34 and is separated from the package substrate 10 by the substrate 32 and the cavity 33. Thus, wire bonding can be used to electrically connect the first pad 35 and the second pad 111 on the package substrate 10 using metal leads 36, so as to extract the electrode signal of the MEMS diaphragm 31 of the detection capacitor.

[0075] It should be noted that the premise of this application is a MEMS device 30 with only a single-layer MEMS diaphragm 31 structure manufactured based on microelectromechanical systems. The function of the MEMS device 30 is to provide a movable electrode (MEMS diaphragm 31) for detecting airflow signals. The structure of the MEMS device 30 may include a substrate 32, a MEMS diaphragm 31, a passivation protective layer 34, a first pad 35 for electrical contact or fixation, etc.

[0076] Of course, it should be understood that the preset cavity wall region 41 is not limited to the manner shown above, which is only provided on the metal housing 20.

[0077] In another example, refer to Figure 18 Alternatively, the preset cavity wall region 41 can be located on the packaging substrate 10. In this case, a metal layer can be provided in the preset cavity wall region 41 of the packaging substrate 10, thereby improving the reliability and stability of the preset cavity wall region 41 as the back electrode of the detection capacitor.

[0078] For example, refer to Figure 18The preset cavity wall region 41 is located on the packaging substrate 10. In this embodiment, the MEMS device 30 is a single-layer film structure consisting only of a MEMS diaphragm 31, with the packaging substrate 10 positioned below it. The area on the packaging substrate 10 directly opposite the MEMS diaphragm 31 is defined as the preset cavity wall region 41. The preset cavity wall region 41 and the MEMS diaphragm 31 together constitute a detection capacitor, serving as the detection capacitor portion. Under pressure, the single-layer MEMS diaphragm 31 undergoes elastic deformation, causing a change in the capacitance value of the detection capacitor, which is a movable capacitor. The subsequent detection circuit can determine and output the change in the static capacitance value (the capacitance value of the detection capacitor when the MEMS diaphragm 31 has not deformed). The capacitance value of the detection capacitor in a static state can be adjusted by controlling the height between the MEMS diaphragm 31 and the packaging substrate 10, and by controlling the size of the MEMS diaphragm 31. For example, the height between the MEMS diaphragm 31 and the packaging substrate 10 can be controlled at the micrometer level, and the size of the MEMS diaphragm 31 can be set to an extremely small size, thereby allowing the MEMS device 30 to be designed to be extremely small.

[0079] Since the MEMS device 30 only has a single-layer film structure MEMS diaphragm 31, there is no need to fabricate a back electrode plate in the MEMS device 30, and the structural design is relatively simple. For example, the preset cavity wall region 41 on the packaging substrate 10 is grounded. At this time, the preset cavity wall region 41 can be electrically connected to the grounding line of the top metal layer 11 of the packaging substrate 10, and the grounding line of the top metal layer 11 of the packaging substrate 10 can be electrically connected to the grounding pad 121 of the bottom metal layer 12 through the metallized through-hole inside the packaging substrate 10. Thus, when the grounding pad 121 of the packaging substrate 10 is grounded, the grounding line of the top metal layer 11 of the packaging substrate 10 can be grounded, thereby realizing the grounding of the preset cavity wall region 41 on the packaging substrate 10. The MEMS diaphragm 31 can be electrically connected to the second pad 111 on the packaging substrate 10 via the first pad 35 on the MEMS device 30 through direct contact connection, and can be connected to the output pad 122 on the bottom metal layer 12 through other traces and metallized holes of the packaging substrate 10 to transmit the capacitance value signal of the detection capacitor.

[0080] For example, refer to Figures 3-6The MEMS device 30 has a first pad 35, which can be directly connected to the second pad 111 of the packaging substrate 10 via solder balls. It can be seen that the cavity 33 in the MEMS device 30 is located between the MEMS diaphragm 31 and the top plate 21 of the metal housing 20; that is, the cavity 33 is not located between the MEMS diaphragm 31 and the packaging substrate 10. For example, there can be one or more first pads 35. One first pad 35 is electrically connected to the MEMS diaphragm 31 to transmit the signal from the MEMS diaphragm 31. The other first pads 35 can be used to fix the MEMS device 30. For example, the MEMS device 30 has four first pads 35, one of which is connected to the MEMS diaphragm 31 to extract the signal from the MEMS diaphragm 31, completing the airflow detection function. The three extra first pads 35 are compatible pads, designed not only as spare pads for connecting to the MEMS diaphragm 31, but also for fixing the MEMS device 30 to the packaging substrate 10, thus combining utility and fixation functions. For example, the first pads 35 are disposed on the passivation protection layer 34. The initial capacitance value of the sensing capacitor can be controlled by controlling the bump height of the first pads 35 and the second pads 111, thereby controlling the distance between the MEMS diaphragm 31 and the preset cavity wall region 41 of the packaging substrate 10 without deformation. At this time, the first pads 35 are directly connected to the second pads 111 of the packaging substrate 10, that is, the first pads 35 and the second pads 111 are directly connected in a non-wire bonding manner. This method ensures good contact strength between the first pads 35 and the second pads 111, and also improves the flatness of the entire MEMS device 30. Various methods can be used for direct contact connection; two methods are exemplarily described below.

[0081] For example, a direct contact connection can be achieved using a BGA (Ball Grid Array) method. In this case, both the first pad 35 and the second pad 111 can be multiple solder balls arranged in an array. Alternatively, the first pad 35 and the second pad 111 can be arranged in a low-density solder ball array. Electrical connection between the first pad 35 on the MEMS device 30 and the package substrate 10 or external interconnects is then achieved through ball placement. In this case, the capacitance value of the detection capacitor can be controlled by adjusting the BGA ball placement height, resulting in better signal consistency.

[0082] For example, the direct contact connection can also employ a Cu-Cu interconnect method. In this case, both the first pad 35 and the second pad 111 can be made of copper bumps, and the direct contact connection between the first pad 35 and the second pad 111 is achieved through a low-temperature bonding method based on thermocompression bonding. In this case, the capacitance value of the detection capacitor can be controlled by adjusting the height of the copper-copper bonding bumps, resulting in better signal consistency.

[0083] The main advantages of the direct contact connection method shown above are: its signal transmission characteristics are good, which can greatly reduce the signal transmission distance; in addition, this process has a special advantage in controlling the spacing between the MEMS diaphragm 31 and the packaging substrate 10, thus making the consistency control of the product more precise.

[0084] For example, refer to Figure 18 The vents at this time can also include at least one first vent 51 and at least one second vent 52. The first vent 51 is disposed on the preset cavity wall region 41, meaning the first vent 51 is still positioned opposite the MEMS diaphragm 31. For example, there can be one first vent 51, and its cross-sectional area is small, used for external pressure detection. The small diameter of the first vent 51 also helps increase the effective area of ​​the detection capacitor and reduce signal loss. The second vents 52 are all disposed on the metal housing 20. For example, the second vent 52 can be disposed directly above the MEMS diaphragm 31.

[0085] The above embodiments describe the structural configurations when the preset cavity wall region 41 is located on the metal housing 20 and when the preset cavity wall region 41 is located on the packaging substrate 10, respectively. It should be noted that the preset cavity wall region 41 can also be partially located on the metal housing 20 and partially located on the packaging substrate 10. Furthermore, it should be noted that the following embodiments are equally applicable to both the structural configurations when the preset cavity wall region 41 is located on the metal housing 20 and when the preset cavity wall region 41 is located on the packaging substrate 10.

[0086] For example, refer to Figure 12 , Figure 14 , Figure 16 and Figure 18 The vents may further include at least one third vent 53 and at least one fourth vent 54. Each third vent 53 is disposed on the packaging substrate 10 and staggered from the MEMS diaphragm 31, and the total cross-sectional area of ​​all third vents 53 is greater than the total cross-sectional area of ​​all first vents 51; each fourth vent 54 is disposed on the metal housing 20 and staggered from the MEMS diaphragm 31, and the total cross-sectional area of ​​all fourth vents 54 is greater than the total cross-sectional area of ​​all second vents 52.

[0087] In this embodiment, by providing a third air hole 53 and a fourth air hole 54, both of which are staggered from the MEMS diaphragm 31, and by ensuring that the total cross-sectional area of ​​all the third air holes 53 is greater than the total cross-sectional area of ​​all the first air holes 51, and the total cross-sectional area of ​​all the fourth air holes 54 is greater than the total cross-sectional area of ​​all the second air holes 52, the airflow to be measured can be diverted when passing through the MEMS detection component. For example, a smaller amount of airflow will flow through the MEMS diaphragm 31 to detect changes in air pressure, while more airflow will flow through the receiving cavity 40 via the larger total cross-sectional area of ​​the third air holes 53 and the fourth air holes 54.

[0088] In some embodiments, reference Figure 10 , Figure 11 , Figures 14-17 Furthermore, a partition 23 can be provided within the receiving cavity 40, dividing the receiving cavity 40 into a first chamber 42 and a second chamber 43. The MEMS device 30 is located within the first chamber 42, and both the first vent 51 and the second vent 52 connect the first chamber 42 to the outside of the receiving cavity 40. The third vent 53 and the fourth vent 54 connect the second chamber 43 to the outside of the receiving cavity 40. By providing the partition 23 within the receiving cavity 40, dividing it into two independent first chambers 42 and second chambers 43, the airflow flowing through the first chamber 42 will not enter the second chamber 43.

[0089] For example, refer to Figure 10 and Figure 11 The partition 23 can be integrally manufactured with the metal housing 20, or it can be connected to the metal housing 20 through welding, bonding, or other processes. The partition 23 and the metal housing 20 form two independent chambers, namely the first chamber 42 and the second chamber 43. The first chamber 42 serves as the receiving chamber 40 of the MEMS device 30, and the second chamber 43 serves as the airflow inlet chamber. The advantage of this design is that it can divert external airflow and channel it into the separate first chamber 42 and second chamber 43, reducing the impact of impurities (such as aerosols and moisture) in the external airflow on the operating state of the MEMS device 30 without affecting pressure detection. This is because, in related technologies, after the atomized airflow enters the oral cavity, part of it is released into the air. A large amount of atomized gas is trapped in the inhalable air region of the MEMS detection component, which is equivalent to a low-concentration atomized airflow, meaning that the external airflow entering the MEMS detection component contains impurities. In the above embodiments of this application, by splitting the intake airflow of the MEMS detection component and the test airflow for sensor pressure detection, the pressure detection function can be better realized, while avoiding the potential failure effects of impurities such as aerosols and water vapor carried in the intake airflow on the MEMS device 30.

[0090] It should be noted that the first chamber 42 and the externally connected second vent 52 are used for pressure balance on both sides of the MEMS diaphragm 31 under differential pressure conditions. For example, there can be one or more second vents 52; preferably, there are multiple second vents 52, which can employ a selectable micropore array structure. Above the second chamber 43, which serves as the airflow inlet chamber, is a fourth vent 54 serving as an airflow channel. This fourth vent 54 is used as the source of atomized airflow, superimposed on the aerosol mixture inhaled into the human body. There can be one or multiple fourth vents 54, used to enhance the subjective experience of inhaling the atomized material. For example, when the first pad 35 and the second pad 111 are bonded together by metal leads 36, all metal leads 36 can be placed within the first chamber 42, and the second pad 111 can also be placed within the first chamber 42, so that the partition 23 does not affect the routing of the metal leads 36.

[0091] Of course, in other embodiments, refer to Figure 12 and Figure 13 Therefore, it is not necessary to install the aforementioned partition 23 inside the receiving cavity 40. In this case, the third vent 53 and the fourth vent 54 can be placed at one end of the receiving cavity 40, while the MEMS device 30 can be placed at the other end of the receiving cavity 40. The distance between the third vent 53 and the fourth vent 54 and the MEMS device 30 should be increased as much as possible to prevent the intake airflow from affecting the working state of the MEMS device 30.

[0092] For example, refer to Figure 7 and Figure 8The first vent 51 and / or the third vent 53 are formed by metallized vias provided in the packaging substrate 10. The metallized vias on the packaging substrate 10 can be used to electrically connect the top metal layer 11 and the bottom metal layer 12 on the packaging substrate 10, thereby achieving the dual functions of airflow and electrical connection through a single structure. Specifically, only some or all of the first vent 51 may be formed by metallized vias provided in the packaging substrate 10, while all of the third vent 53 may be formed by non-metallized vias provided in the packaging substrate 10. Alternatively, only some or all of the third vent 53 may be formed by metallized vias provided in the packaging substrate 10, while all of the first vent 51 may be formed by non-metallized vias provided in the packaging substrate 10. Alternatively, only some or all of the first vent 51 may be formed by metallized vias provided in the packaging substrate 10, and only some or all of the third vent 53 may be formed by metallized vias provided in the packaging substrate 10. For example, the metallized vias in the packaging substrate 10 do not require resin or ink plugging, thus serving as the first vent 51 or the third vent 53. When the metallized vias in the packaging substrate 10 are used as the first vent 51, their function, besides providing electrical contact, is to regulate the air pressure across the MEMS thin film, i.e., to sense the pressure difference generated on the upper and lower sides of the thin film structure, thereby altering the sensitivity of the MEMS sensing component. For example, one or more metallized vias can be provided on the packaging substrate 10, each serving as either the first vent 51 or the third vent 53. By reusing the metallized vias in the vents of the packaging substrate 10, the device design is extremely simplified. For example, there is one second vent 52, and the second vent 52 has a sealing weld ring 123 on the bottom metal layer 12.

[0093] For example, refer to Figure 1 The metal casing 20 may include a top plate 21 and a side plate 22; wherein the top plate 21 is disposed opposite to the encapsulation substrate 10; and the side plate 22 is connected between the edges of the top plate 21 and the encapsulation substrate 10. (Reference) Figure 9 At this time, the second vent 52 and the fourth vent 54 can both be set on the top plate 21, which makes it easier to set the MEMS detection component on the atomization channel of the electronic atomization device.

[0094] For example, refer to Figure 2 The pre-defined cavity wall region 41 is grounded, and a signal processing circuit is provided on the packaging substrate 10, which is electrically connected to the MEMS diaphragm 31. The signal processing circuit analyzes and detects changes in the capacitance value of the capacitor based on the signal received from the MEMS diaphragm 31, and then determines the pressure difference across the MEMS diaphragm 31 based on the capacitance change. For example, the bottom metal layer 12 also has an output pad 122 for transmitting signals generated by the signal processing circuit or the MEMS diaphragm 31.

[0095] The various embodiments described above provide a simplified MEMS device 30 including a MEMS diaphragm 31. This MEMS device 30 can be used in airflow sensor applications, reducing the cost of the MEMS device 30 while providing a device-level integration solution, and simultaneously meeting or exceeding the performance requirements of current electret capacitors. In some of the above embodiments, the detection capacitor composed of the MEMS diaphragm 31 and the preset cavity wall region 41 can achieve performance equal to or exceeding that of electret capacitors, combining the advantages of small size and high consistency, while avoiding the poor reliability problem of electret variable capacitors. It can be seen that this application achieves the same functionality and value as existing solutions, simplifies the process of existing MEMS detection chips and simplifies the implementation of capacitance detection, and significantly reduces device costs without affecting detection function and accuracy.

[0096] The implementation methods mentioned in the above embodiments have the following main advantages:

[0097] (1) The design structure is simple. This design structure not only reduces the design difficulty of MEMS device 30, but also makes full use of the component resources of MEMS detection component and reuses metal shell 20. The metal shell 20 not only has the function of shielding and protecting the internal MEMS device 30, but also serves as a plate component of detection capacitor, making the detection capacitor structure simple and easy to implement.

[0098] (2) A detection capacitor structure with a larger effective area is formed. Traditional MEMS chips mostly use porous backplate structures, resulting in a small effective area for the detection capacitor, typically with a capacitance value of 0.8 to 1 pF, which significantly affects the accuracy of capacitance detection. In some embodiments of this application, a metal shell 20 is used as the backplate structure for the detection capacitor, resulting in a larger effective area for the capacitor. Specifically, the capacitance is increased by more than 50% compared to the traditional structure, which is more conducive to signal detection. This addresses the problem of low detection accuracy of traditional MEMS chips with extremely small dimensions. Through the above design, this application achieves the design of a large capacitor in a small size, providing a feasible solution for the miniaturized design of pressure-capacitance change detection. In a more preferred embodiment, the air holes on the metal shell 20 are located outside the preset cavity wall area 41, ensuring a larger effective area for the capacitor, which is beneficial for accurate trigger signal detection. This alleviates the problem of accidental triggering of the e-atomizer caused by external environmental factors such as drops and vibrations; it also improves the failure problem caused by the occasional inability to trigger the e-atomizer due to the small capacitance value of the detection capacitor.

[0099] (3) The device formation process is simpler, and the MEMS device 30 is more economical to manufacture. In the implementation scheme based on the metal lead 36 welding process, only a single lead welding is required, which greatly improves the cost and efficiency. The non-lead welding process is simpler and more efficient to implement through copper-copper bonding, BGA or other methods for direct contact connection.

[0100] (4) Higher reliability: By separating the intake airflow of the MEMS detection component and the test airflow for sensor pressure detection, the pressure detection function can be better realized, while avoiding potential failure effects of impurities such as aerosols and water vapor carried in the intake airflow on the MEMS device 30. In specific implementation, some of the above embodiments divide the cavity 40 into a first chamber 42 and a second chamber 43 by setting a partition 23 inside the cavity 40. The first chamber 42 is used to accommodate the MEMS device 30, and the second chamber 43 serves as an airflow channel for the transmission of intake airflow and airflow pressure detection, respectively.

[0101] (5) Extremely small size: By controlling the height between the MEMS diaphragm 31 and the metal housing 20 or the packaging substrate 10 to be at the micrometer level, the size of the MEMS diaphragm 31 is set to be extremely small, so that the size of the MEMS device 30 can be designed to be extremely small.

[0102] (6) In some embodiments, the pores on the packaging substrate 10 are reused metallized vias, which makes the device design extremely simple.

[0103] Additionally, this application embodiment also provides an electronic atomization device, which includes any of the aforementioned MEMS detection components. For example, the electronic atomization device can be, but is not limited to, an inhalation-type electronic atomizer; for example, an inhalation-type electronic atomizer can be, but is not limited to, an electronic cigarette. For example, the MEMS detection component can be, but is not limited to, a gas flow sensor, a pressure sensor, or a sensor that uses changes in the capacitance of a capacitor to detect gas flow and pressure.

[0104] This application has been described through the above embodiments. However, it should be understood that the above embodiments are for illustrative purposes only and are not intended to limit this application to the scope of the described embodiments. Furthermore, those skilled in the art will understand that this application is not limited to the above embodiments, and many more variations and modifications can be made based on the teachings of this application, all of which fall within the scope of protection claimed in this application. The scope of protection of this application is defined by the appended claims and their equivalents.

Claims

1. A MEMS detection component, characterized in that, include: Packaging substrate; A metal housing is disposed on the packaging substrate, and a receiving cavity is formed between the metal housing and the packaging substrate; the cavity wall is provided with vent holes, and the vent holes communicate with the interior and exterior of the receiving cavity; A MEMS device is disposed on the packaging substrate and located within the receiving cavity; the MEMS device includes a MEMS diaphragm, which is spaced apart from a predetermined cavity wall region of the receiving cavity to form a detection capacitor between the MEMS diaphragm and the predetermined cavity wall region.

2. The MEMS detection component as described in claim 1, characterized in that, The MEMS device further includes: a substrate with an internal cavity, the MEMS diaphragm being disposed on the substrate, the substrate being disposed on the packaging substrate, and the cavity being located between the packaging substrate and the MEMS diaphragm; The preset cavity wall region is located on the metal housing, and the vent includes at least one first vent and at least one second vent; wherein, the first vent is disposed on the packaging substrate and communicates with the outside of the cavity and the receiving cavity; the second vent is disposed on the metal housing.

3. The MEMS detection component as described in claim 2, characterized in that, The second vent and the preset cavity wall region are located in different areas of the metal shell.

4. The MEMS detection component as described in claim 1, characterized in that, The preset cavity wall region is located on the packaging substrate, and the MEMS device is provided with a first pad, which is directly connected to a second pad on the packaging substrate. The vent includes at least one first vent and at least one second vent; wherein the first vent is disposed on the preset cavity wall region and the second vent is disposed on the metal shell.

5. The MEMS detection component as described in any one of claims 2 to 4, characterized in that, The pores also include at least one third pore and at least one fourth pore; The third vent is disposed on the packaging substrate and is offset from the MEMS diaphragm, and the total cross-sectional area of ​​all the third vents is greater than the total cross-sectional area of ​​all the first vents. The fourth vent is disposed on the metal housing and is offset from the MEMS diaphragm. The total cross-sectional area of ​​all the fourth vents is greater than the total cross-sectional area of ​​all the second vents.

6. The MEMS detection component as described in claim 5, characterized in that, The receiving cavity is provided with a partition, which divides the receiving cavity into a first chamber and a second chamber. The MEMS device is located in the first cavity, and both the first vent and the second vent are connected to the outside of the first cavity and the receiving cavity. Both the third and fourth air vents are connected to the outside of the second chamber and the receiving cavity.

7. The MEMS detection component as described in claim 5, characterized in that, The first pore and / or the third pore are formed by metallized through-holes disposed in the packaging substrate.

8. The MEMS detection component as described in claim 5, characterized in that, The metal casing includes: The top plate is disposed opposite to the packaging substrate; Side plate, connected between the edges of the top plate and the encapsulation substrate; The second vent and the fourth vent are both disposed on the top plate; and when the preset cavity wall region is located on the metal shell, the preset cavity wall region is located on the top plate.

9. The MEMS detection component as described in claim 1, characterized in that, The preset cavity wall area is grounded, and a signal processing circuit is provided on the packaging substrate. The signal processing circuit is electrically connected to the MEMS diaphragm.

10. An electronic atomizing device, characterized in that, include: The MEMS detection component as described in any one of claims 1 to 9.

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