System for electric vehicle having inverter with t-arrangement power modules

Abstract

A system for an electric vehicle having an inverter with a T-shaped arrangement of power modules. A system includes an inverter for converting DC power from a battery to AC power to drive a motor, where the inverter includes a first power module including: a first switch electrically connected to a positive DC power tab and an AC power tab; a second switch electrically connected to a negative DC power supply tab and the AC power supply tab; and two switches electrically connected to the neutral power supply tab and the AC power supply tab.

Description

Technical Field

[0001] Various embodiments of this disclosure generally relate to systems for inverters having dual-sided cooled power modules, and more specifically, to systems for electric vehicles having three-level inverters with dual-sided cooled power modules arranged in a T-shape. Background Technology

[0002] Inverters (such as those used to drive motors in electric vehicles) are responsible for converting direct current (DC) to alternating current (AC) to drive the motor. In some systems, two-level inverters have a simple structure and relatively low production costs. However, some two-level inverters may produce output voltages with high harmonic levels and relatively low efficiency at higher switching frequencies.

[0003] This disclosure aims to overcome one or more of the aforementioned challenges. Summary of the Invention

[0004] In some aspects, the technology described herein relates to a system comprising: an inverter for converting DC power from a battery into AC power to drive a motor, wherein the inverter comprises: a first power module comprising: a first switch electrically connected to a positive DC power terminal and an AC power terminal; a second switch electrically connected to a negative DC power terminal and the AC power terminal; and two switches electrically connected to a neutral power terminal and the AC power terminal.

[0005] In some respects, the technology described herein relates to a system that further includes: a first heat sink on a first side of the first power module; and a second heat sink on a second side of the first power module.

[0006] In some respects, the technology described herein relates to a system that further includes a capacitor electrically connected to the first power module.

[0007] In some respects, the technology described herein relates to a system that further includes: a second power supply module; and a third power supply module, wherein the first power supply module corresponds to a first phase of the motor, the second power supply module corresponds to a second phase of the motor, and the third power supply module corresponds to a third phase of the motor.

[0008] In some aspects, the technology described herein relates to a system that further includes: a first heat sink; and a second heat sink, wherein the first heat sink is on a first side surface of a first power module, on a first side surface of a second power module, and on a first side surface of a third power module, and wherein the second heat sink is on a second side surface of a first power module, on a second side surface of a second power module, and on a second side surface of a third power module.

[0009] In some respects, the technology described herein relates to a system in which two switches include a third and a fourth switch arranged in series.

[0010] In some respects, the technology described herein relates to a system in which a first switch, a second switch, a third switch, and a fourth switch each comprise two or more semiconductor chips.

[0011] In some respects, the technology described herein relates to a system in which each of two or more semiconductor chips, including a first switch, a second switch, a third switch, and a fourth switch, is arranged with symmetrical gate wiring.

[0012] In some respects, the technology described herein relates to a system in which two or more of the first, second, third, and fourth switches are arranged with the drain facing down.

[0013] In some respects, the technology described herein relates to a system in which two switches are a switch group.

[0014] In some respects, the technology described herein relates to a system in which two or more semiconductor chips in a second, third, and fourth switch are arranged with their drains facing down, and two or more semiconductor chips in a first switch are arranged with their sources facing down.

[0015] In some aspects, the technology described herein relates to a system that further includes: a battery configured to supply DC power to an inverter; and a motor configured to receive AC power from the inverter to drive the motor, wherein the system is provided as a vehicle including the inverter, the battery, and the motor.

[0016] In some aspects, the technology described herein relates to a system including a power module for an inverter, the power module comprising: a first switch electrically connected to a positive DC power terminal and an AC power terminal; a second switch electrically connected to a negative DC power terminal and the AC power terminal; and two switches electrically connected to a neutral power terminal and the AC power terminal.

[0017] In some respects, the technology described herein relates to a system in which two switches include a third switch and a fourth switch, and wherein each of the first, second, third, and fourth switches includes one or more semiconductor chips arranged with symmetrical gate wiring.

[0018] In some respects, the technology described herein relates to a system in which one or more of a first switch, a second switch, a third switch, and a fourth switch are arranged with the drain facing down.

[0019] In some respects, the technology described herein relates to a system in which the power module includes one or more spacers.

[0020] In some respects, the technology described herein relates to a system in which one or more semiconductor chips of a second, third, and fourth switch are arranged with their drains facing down, and one or more semiconductor chips of a first switch are arranged with their sources facing down.

[0021] In some respects, the technology described herein relates to a system that further includes a capacitor electrically connected to the power module.

[0022] In some aspects, the technology described herein relates to a system including a power module comprising: a positive DC power terminal; a negative DC power terminal; a neutral power terminal; an AC power terminal; a first switch electrically connected to the positive DC power terminal and the AC power terminal; a second switch electrically connected to the negative DC power terminal and the AC power terminal; and two switches electrically connected to the neutral power terminal and the AC power terminal.

[0023] In some respects, the technology described herein relates to a system that further includes: a first heat sink; and a second heat sink, wherein the two switches include a third switch and a fourth switch, wherein the first heat sink is on a first surface of the power module, and wherein the second heat sink is on a second surface of the power module.

[0024] Further objects and advantages of the disclosed embodiments will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practice of the disclosed embodiments. The objects and advantages of the disclosed embodiments will be realized and achieved by means of the elements and combinations particularly pointed out in the appended claims.

[0025] It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only, and do not limit the claimed disclosed embodiments. Attached Figure Description

[0026] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate various exemplary embodiments and, together with the description, serve to explain the principles of the disclosed exemplary embodiments.

[0027] Figure 1 An exemplary system infrastructure for a vehicle including a combination of inverters and converters, according to some embodiments, is described.

[0028] Figure 2 A schematic diagram of the electrical power of a three-phase inverter module according to one or more embodiments is depicted.

[0029] Figure 3 An exemplary system infrastructure for an inverter controller according to one or more embodiments is described.

[0030] Figure 4 A power schematic diagram of a T-type three-level power supply module according to one or more embodiments is depicted.

[0031] Figure 5 A power module with a two-chip switch configured with drain-down is described according to one or more embodiments.

[0032] Figure 6 A power module with a four-chip switch arranged in a drain-down configuration is described according to one or more embodiments.

[0033] Figure 7 A power module with a two-chip switch configured with drain-down and source-down is described according to one or more embodiments.

[0034] Figure 8 A power module with a four-chip switch configured with drain-down and source-down according to one or more embodiments is described.

[0035] Figure 9 A power module with a heat sink and a large-capacity capacitor is described according to one or more embodiments. Detailed Implementation

[0036] Both the foregoing general description and the following detailed description are exemplary and interpretive only, and do not limit the claimed features. As used herein, the terms “comprises,” “comprising,” “has,” “having,” “includes,” “including,” or other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed or inherent to such process, method, article, or apparatus. In this disclosure, unless otherwise stated, relative terms (such as, for example, “about,” “substantially,” and “approximately”) are used to indicate possible ±10% variation in the stated values. In this disclosure, unless otherwise stated, any numerical value may include possible ±10% variation in the stated values.

[0037] The terminology used below may be interpreted in its broadest and most reasonable manner, although it is used in conjunction with a detailed description of certain specific instances of this disclosure. Indeed, some terms may even be emphasized below; however, any term intended to be interpreted in any constrained manner will be explicitly and specifically defined in this Detailed Description section. For example, in the context of this disclosure, a switching device may be described as a switching element or device, but may refer to any device used to control the flow of power in a circuit. For example, a switching element may be, for example, a metal-oxide-semiconductor field-effect transistor (MOSFET), a bipolar junction transistor (BJT), an insulated-gate bipolar transistor (IGBT), or a relay, or any combination thereof, but is not limited thereto.

[0038] Various embodiments of this disclosure generally relate to systems for inverters having dual-sided cooled power modules, and more specifically, to systems for electric vehicles having three-level inverters with dual-sided cooled power modules arranged in a T-shape. Inverters (such as those used to drive motors in electric vehicles) are responsible, for example, for converting direct current (DC) to alternating current (AC) to drive the motor. A three-phase inverter may include a bridge having six power device switching elements (e.g., power transistors, such as IGBTs or MOSFETs) controlled by pulse-width modulation (PWM) signals generated by a controller.

[0039] In some systems, two-level inverters are popular due to their low cost and simple structure. However, two-level inverters can produce output voltages with high harmonic levels and relatively low efficiency at higher switching frequencies. Three-level inverter topologies can address some of the problems of two-level inverters, such as high harmonic levels in the output voltage and relatively low efficiency at higher switching frequencies. Compared to two-level inverters, multilevel inverters (such as three-level inverters) can produce output voltage waveforms with lower harmonics to better simulate sinusoidal reference voltages. Furthermore, using multilevel topologies allows for lower dv / dt and electromagnetic interference (EMI) radiation. Therefore, due to the three-level output voltage capability and fewer switching devices, the T-type three-level inverter can be a more suitable (or advantageous) topology among multilevel inverters.

[0040] With the advent of electric vehicles, more efficient driving of three-phase motors is becoming increasingly important. Three-phase motors can be driven using three and a half H-phase switches that switch the motor phase connections between a positive high-voltage DC-current source (HVDC+) and a negative high-voltage DC-current source (HVDC-). The loop inductance associated with the phase switch can be important, and may become even more so as silicon carbide (SiC) devices become more prevalent. Lower loop inductance may be particularly important for fast SiC devices, as it allows for faster switching times while maintaining proper voltage and appropriate current overshoot and ringing.

[0041] Some systems may include a minimal or absent three-level T-type power module for 100kW-250kW power rating inverters used in the automotive market. Some systems may face the thermal performance challenges of three-level single-sided cooled power modules for industrial and / or automotive applications. Some systems may include relatively large commutation loops and complex heatsink assemblies for T-type topologies with a single switch. Due to the relatively high inductance of T-type topologies built with a single switch, some systems may include noise coupling with the power supply.

[0042] For example, some systems may include a stacked arrangement of power modules with a single switch. The DC loop inductance measured in the loop between the positive voltage terminal (e.g., HV+) and the neutral terminal may be approximately 104.4 nH, and the DC loop inductance measured in the loop between the negative voltage terminal (e.g., HV-) and the neutral terminal may be approximately 107.7 nH. The 1MHz loop inductance measured in the loop between the positive voltage terminal (e.g., HV+) and the neutral terminal may be approximately 56.4 nH, and the 1MHz loop inductance measured in the loop between the negative voltage terminal (e.g., HV-) and the neutral terminal may be approximately 57.7 nH. However, these are examples, and embodiments are not limited thereto.

[0043] Some systems may include a parallel arrangement of power modules with a single switch. The DC loop inductance measured in the loop between the positive voltage terminal (e.g., HV+) and the neutral terminal may be approximately 131.8 nH, and the DC loop inductance measured in the loop between the negative voltage terminal (e.g., HV-) and the neutral terminal may be approximately 132.6 nH. The 1MHz loop inductance measured in the loop between the positive voltage terminal (e.g., HV+) and the neutral terminal may be approximately 81.9 nH, and the 1MHz loop inductance measured in the loop between the negative voltage terminal (e.g., HV-) and the neutral terminal may be approximately 82.2 nH.

[0044] One or more embodiments may include: one or more chips forming switches Q1, Q5, and Q9, electrically connected to the positive DC power supply terminal; one or more chips forming switches Q2, Q6, and Q10, electrically connected to the negative DC power supply terminal; and one or more chips forming switches Q3-Q4, Q7-Q8, and Q11-Q12, electrically connected to the neutral power supply terminal. One or more embodiments may include gate leads with the same geometry for all phases, which may enhance the balance of current distribution to provide better electrical performance.

[0045] Figure 1 Exemplary system infrastructure for a vehicle including a combined inverter and converter, according to one or more embodiments, is described. Alternatively, the inverter may be an inverter without a converter. Within the context of this disclosure, both an inverter without a converter and a combined inverter and converter can be referred to as an inverter. Figure 1 As shown, the electric vehicle 100 may include an inverter 110, a motor 190, and a battery 195. The inverter 110 may include components for receiving electrical power from an external source and outputting electrical power to charge the battery 195 of the electric vehicle 100. For example, the inverter 110 may convert DC power from the battery 195 in the electric vehicle 100 into AC power to drive the motor 190 of the electric vehicle 100 (e.g., to rotate it), but the embodiments are not limited thereto. For example, the inverter 110 may be bidirectional and may convert DC power to AC power or vice versa, such as during regenerative braking. The inverter 110 may be a three-phase inverter, a single-phase inverter, or a multi-phase inverter.

[0046] Figure 2 A schematic diagram of the electrical power of a three-phase inverter module according to one or more embodiments is depicted. Figure 1 and Figure 2As shown, inverter 110 can be connected to battery 195 and motor 190. Battery 195 can be any power supply device, and motor 190 can be any load. Inverter 110 may include a first three-phase switch group 210, a second three-phase switch group 220, and a third three-phase switch group 225. The first phase U may be associated with ΦA and includes switches Q1, Q2, Q3, Q4, and neutral power terminal N; the second phase V may be associated with ΦB and includes switches Q5, Q6, Q7, Q8, and neutral power terminal N; and the third phase W may be associated with ΦC and includes switches Q9, Q10, Q11, Q12, and neutral power terminal N. The first three-phase switch group 210 may include a first-phase switch Q1, a second-phase switch Q5, and a third-phase switch Q9. The second three-phase switch group 220 may include a first-phase switch Q2, a second-phase switch Q6, and a third-phase switch Q10. The third three-phase switch group 225 may include first-phase switches Q3 and Q4, second-phase switches Q7 and Q8, and third-phase switches Q11 and Q12. For example, switches Q1-Q12 may be metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, and / or gallium nitride (GaN) transistors, but the embodiments are not limited thereto. Switches Q1-Q12 may each include multiple chips arranged in parallel, but the embodiments are not limited thereto. Although... Figure 2 The code describes a switch as a single switch, but each switch can be one or more switches. For example, switches Q3 and Q4 can be a group of switches (such as...). Figure 2 (as depicted), which includes two switches (such as) Figure 4 (As depicted).

[0047] The first three-phase switch group 210, the second three-phase switch group 220, and the third three-phase switch group 225 can be controlled by the inverter controller 300. Figure 3 The PWM signal generated (shown in the diagram) drives the motor 190 to convert the DC power delivered via the input terminal group 285 at capacitor 230 into three-phase AC power at the outputs U, V, and W via the output terminal group 295. Additionally, although... Figure 1 and Figure 2 A three-phase inverter is shown, but this disclosure is not limited thereto and may include single-phase or multi-phase inverters.

[0048] Figure 3 An exemplary system infrastructure for an inverter controller according to one or more embodiments is described.

[0049] The inverter controller 300 may include a set of instructions that can be executed to cause the inverter controller 300 to perform any one or more of the methods or computer-based functions disclosed herein. The inverter controller 300 may operate as a stand-alone device or may be connected to other computer systems or peripheral devices, for example, via a network.

[0050] In networked deployments, the inverter controller 300 can operate as a server, or as a client in a server-client user network environment, or as a peer-to-peer (or distributed) computer system in a peer-to-peer (or distributed) network environment. The inverter controller 300 can also be implemented as or integrated into various devices, such as personal computers (PCs), tablet PCs, set-top boxes (STBs), personal digital assistants (PDAs), mobile devices, handheld computers, laptop computers, desktop computers, communication equipment, cordless phones, landline phones, control systems, cameras, scanners, fax machines, printers, pagers, personal trusted devices, network devices, network routers, switches or bridges, or any other machine capable of executing a set of instructions (sequentially or otherwise) specifying the actions to be taken by that machine. In a particular implementation, the inverter controller 300 may be implemented using electronic devices that provide voice, video, or data communication. Furthermore, while the inverter controller 300 is presented as a single system, the term "system" should also be understood to include any collection of systems or subsystems that individually or jointly execute one or more sets of instructions to perform one or more computer functions.

[0051] like Figure 3 As shown, the inverter controller 300 may include a processor 302, such as a central processing unit (CPU), a graphics processing unit (GPU), or both. The processor 302 can be a component in a variety of systems. For example, the processor 302 may be part of a standard inverter. The processor 302 may be one or more general-purpose processors, digital signal processors, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), servers, networks, digital circuits, analog circuits, combinations thereof, or other devices now known or later developed for analyzing and processing data. The processor 302 may implement software programs, such as manually generated (i.e., programmed) code.

[0052] Inverter controller 300 may include memory 304 communicatable via bus 308. Memory 304 may be main memory, static memory, or dynamic memory. Memory 304 may include, but is not limited to, computer-readable storage media, such as various types of volatile and non-volatile storage media, including but not limited to random access memory, read-only memory, programmable read-only memory, electrically programmable read-only memory, electrically erasable read-only memory, flash memory, magnetic tape or disk, optical media, etc. In one embodiment, memory 304 includes a cache or random access memory for processor 302. In alternative embodiments, memory 304 is decoupled from processor 302, such as processor cache memory, system memory, or other memory. Memory 304 may be an external storage device or database for storing data. Examples include hard disk drives, optical discs (“CDs”), digital video discs (“DVDs”), memory cards, memory sticks, floppy disks, universal serial bus (“USB”) storage devices, or any other device operable for storing data. Memory 304 is operable to store instructions executable by processor 302. The functions, actions, or tasks shown in the figures or described herein can be performed by processor 302, which executes instructions stored in memory 304. These functions, actions, or tasks are independent of a specific type of instruction set, storage medium, processor, or processing strategy, and can be performed by software, hardware, integrated circuits, firmware, microcode, etc., operating individually or in combination. Similarly, processing strategies may include multiprocessing, multitasking, parallel processing, etc.

[0053] As shown in the figure, the inverter controller 300 may further include a display 310, such as a liquid crystal display (LCD), an organic light-emitting diode (OLED), a flat panel display, a solid-state display, a cathode ray tube (CRT), a projector, a printer, or other display device now known or later developed for outputting defined information. The display 310 may serve as an interface for a user to view the operation of the processor 302, or specifically as an interface with software stored in the memory 304 or the drive unit 306.

[0054] Alternatively or concurrently, the inverter controller 300 may include an input device 312 configured to allow a user to interact with any component of the inverter controller 300. The input device 312 may be a numeric keypad, keyboard, or cursor control device (such as a mouse or joystick), touchscreen display, remote control, or any other device operable to interact with the inverter controller 300.

[0055] The inverter controller 300 may also, or alternatively, include a drive unit 306 implemented as a disk or optical disc drive. The drive unit 306 may include a computer-readable medium 322 in which instructions 324 (e.g., one or more sets of instructions) (e.g., software) may be embedded. Further, the instructions 324 may embody one or more of the methods or logic described herein. The instructions 324 may reside wholly or partially within memory 304 and / or processor 302 during execution by the inverter controller 300. Memory 304 and processor 302 may also include the computer-readable medium described above.

[0056] In some systems, computer-readable medium 322 includes instructions 324 or receives and executes instructions 324 in response to a propagated signal, enabling devices connected to network 370 to transmit voice, video, audio, images, or any other data via network 370. Further, instructions 324 may be transmitted or received via communication port or interface 320 through network 370 and / or using bus 308. Communication port or interface 320 may be part of processor 302 or may be a separate component. Communication port or interface 320 may be formed in software or may be a physical connector in hardware. Communication port or interface 320 may be configured to connect to network 370, external media, display 310, or any other component in inverter controller 300, or a combination thereof. Connection to network 370 may be a physical connection (such as a wired Ethernet connection) or may be established wirelessly, as described below. Similarly, additional connections to other components of inverter controller 300 may be physical connections or may be established wirelessly. Network 370 may alternatively be directly connected to bus 308.

[0057] Although computer-readable medium 322 is shown as a single medium, the term "computer-readable medium" can include a single medium or multiple media (such as a centralized or distributed database and / or associated caches and servers) storing one or more sets of instructions. The term "computer-readable medium" can also include any medium capable of storing, encoding, or carrying a set of instructions for execution by a processor or causing a computer system to perform any one or more of the methods or operations disclosed herein. Computer-readable medium 322 can be non-transitory and can be tangible.

[0058] Computer-readable medium 322 may include solid-state memory, such as a memory card, or other package housing one or more non-volatile read-only memories. Computer-readable medium 322 may be random access memory or other volatile rewritable memory. Alternatively or additionally, computer-readable medium 322 may include magneto-optical or optical media, such as magnetic disks or magnetic tapes, or other storage devices for capturing carrier signals (such as signals transmitted via a transmission medium). Digital file attachments to emails or other self-contained information archives or archive sets can be considered as distribution media as tangible storage media. Therefore, this disclosure is to be construed as including any one or more computer-readable media or distribution media in which data or instructions can be stored, as well as other equivalents and successor media.

[0059] In alternative embodiments, specialized hardware implementations (such as application-specific integrated circuits, programmable logic arrays, and other hardware devices) may be configured to implement one or more of the methods described herein. Applications that may include various implementations of the apparatus and systems can broadly encompass a wide range of electronic and computer systems. One or more implementations described herein may use two or more specific interconnected hardware modules or devices having associated control and data signals that can be transferred between or through modules, or as part of an application-specific integrated circuit, to implement functionality. Therefore, this system encompasses software, firmware, and hardware implementations.

[0060] Inverter controller 300 can be connected to network 370. Network 370 may define one or more networks, including wired or wireless networks. Wireless networks may be cellular telephone networks, 802.11, 802.16, 802.20, or WiMAX networks. Further, such networks may include public networks (such as the Internet), private networks (such as intranets), or combinations thereof, and may utilize a variety of networking protocols now available or developed later, including but not limited to TCP / IP-based networking protocols. Network 370 may include wide area networks (WANs) (such as the Internet), local area networks (LANs), campus area networks, metropolitan area networks, direct connections (such as via a universal serial bus (USB) port), or any other network that allows data communication. Network 370 may be configured to couple one computing device to another to enable data communication between the devices. Typically, network 370 may be able to use any form of machine-readable medium to transfer information from one device to another. Network 370 may include communication methods through which its information can travel between computing devices. Network 370 may be divided into subnetworks. A subnet may allow access to all other components in other components connected to it, or a subnet may restrict access between components. Network 370 may be considered a public or private network connection and may include, for example, a virtual private network or encryption or other security mechanisms employed on the public Internet.

[0061] According to various embodiments of this disclosure, the methods described herein can be implemented by software programs executable by a computer system. Further, in exemplary non-limiting embodiments, the implementation may include distributed processing, component or object distributed processing, and parallel processing. Alternatively, virtual computer system processing may be configured to implement one or more of the methods or functionalities described herein.

[0062] Although this specification describes components and functions that may be implemented in specific implementations with reference to particular standards and protocols, this disclosure is not limited to such standards and protocols. For example, standards for transmission over the Internet and other packet-switched networks (e.g., TCP / IP, UDP / IP, HTML, HTTP) represent examples of prior art. Such standards are periodically superseded by faster or more efficient equivalents with substantially the same functionality. Therefore, alternative standards and protocols with the same or similar functionality as those disclosed herein are considered their equivalents.

[0063] It will be understood that, in one embodiment, the operation of the method in question is performed by a suitable processor (or processors) of a processing (i.e., computer) system that executes instructions (computer-readable code) stored in a storage device. It will also be understood that this disclosure is not limited to any particular specific implementation or programming technique, and that any suitable technique used to implement the functionality described herein may be used to implement this disclosure. This disclosure is not limited to any particular programming language or operating system.

[0064] Figure 4A power schematic diagram of a T-type three-level power supply module according to one or more embodiments is depicted. The power supply module 400 may include a first switch 431, a second switch 441, a third switch 451, and a fourth switch 452. The power supply module 400 may include a positive DC power terminal 410, a negative DC power terminal 420, a neutral power terminal 415, and a phase terminal 425. The first switch 431 may be electrically connected to the positive DC power terminal 410 and the phase terminal 425. The second switch 441 may be electrically connected to the negative DC power terminal 420 and the phase terminal 425. The third switch 451 may be electrically connected to the fourth switch 452 and the phase terminal 425. The fourth switch 452 may be electrically connected to the neutral power terminal 415 and the third switch 451. The two switches may be arranged in series between the neutral power terminal 415 and the phase terminal 425. For example, the third switch 451 may be electrically connected (or arranged) in series with the fourth switch 452. The third switch 451 may be arranged between the phase terminal 425 and the fourth switch 452. The fourth switch 452 can be arranged between the neutral power terminal 415 and the third switch 451. The first switch 431, the second switch 441 and the third switch 451 can be electrically connected to the phase terminal 425, so that the first switch 431, the second switch 441, the third switch 451 and the fourth switch 452 are arranged in a T-shape.

[0065] The first switch 431, the second switch 441, the third switch 451, and the fourth switch 452 may each include one or more semiconductor chips, or two or more semiconductor chips. For example, the first switch 431, the second switch 441, the third switch 451, and the fourth switch 452 may each include one, two, or four semiconductor chips, but the embodiments are not limited thereto. For example, the semiconductor chips may include transistors, and each transistor may include one or more metal-oxide-semiconductor field-effect transistors (MOSFETs), but the embodiments are not limited thereto. Each transistor may include a source, a drain, and a gate. For example, the third switch 451 may be arranged opposite the fourth switch 452 in a common-source arrangement, such that the source of the transistor in the third switch 451 can be electrically connected to the source of the transistor in the fourth switch 452, but the embodiments are not limited thereto. For example, the third switch 451 may be arranged opposite the fourth switch 452 in a common-drain arrangement, such that the drain of the transistor in the third switch 451 can be electrically connected to the drain of the transistor in the fourth switch 452. The first switch 431 may be arranged in the same direction as the second switch 441, but the embodiments are not limited thereto.

[0066] The power module 400 can be configured to operate such that when current flows in the loop between the neutral power terminal 415 and the positive DC power terminal 410, the third switch 451 is in the on state (or activated), and the second switch 441 is in the off state (or inactive), while the first switch 431 and the fourth switch 452 alternately switch between the on state and the off state, but the embodiments are not limited thereto.

[0067] The power module 400 can be configured to operate such that when current flows in the loop between the negative DC power terminal 420 and the neutral power terminal 415, the fourth switch is in the ON state (or activated), and the first switch 431 is in the OFF state (or inactive), while the second switch 441 and the third switch 451 alternately switch between the ON and OFF states, but the embodiments are not limited thereto.

[0068] refer to Figure 2 The first switch 431 can be associated with any one of the switches Q1, Q5 and Q9; the second switch 441 can be associated with any one of the switches Q2, Q6 and Q10; the third switch 451 can be associated with any one of the switches Q3, Q7 and Q11; the fourth switch 452 can be associated with any one of the switches Q4, Q8 and Q12, and the neutral power terminal 415 can be associated with the neutral power terminal N.

[0069] Figure 5 A power module with two chip switches arranged with drain-down configuration is depicted according to one or more embodiments. The power module 500 may include a first switch 531, a second switch 541, a third switch 551, a fourth switch 552, a positive DC power connector 510, a negative DC power connector 520, a neutral power connector 515, and an AC power connector 525. The first switch 531 is electrically connected to the positive DC power connector 510 and the AC power connector 525. The second switch 541 is electrically connected to the negative DC power connector 520 and the AC power connector 525. The third switch 551 is electrically connected to the fourth switch 552 and the AC power connector 525. The fourth switch 552 is electrically connected to the neutral power connector 515 and the third switch 551.

[0070] refer to Figure 4First switch 431 can be associated with first switch 531, second switch 441 can be associated with second switch 541, third switch 451 can be associated with third switch 551, fourth switch 452 can be associated with fourth switch 552, positive DC power terminal 410 can be associated with positive DC power connector 510, negative DC power terminal 420 can be associated with negative DC power connector 520, neutral power terminal 415 can be associated with neutral power connector 515, and phase terminal 425 can be associated with AC power connector 525. For simplicity, a power schematic diagram of the power module 400 (see, for example, [reference]). Figure 4 Electrical connection between the power supply module 500 and the power module 500. Figure 5 (Not shown in the image) may contain many similarities, which will not be discussed further.

[0071] The first switch 531, the second switch 541, the third switch 551, and the fourth switch 552 may each include one or more semiconductor chips. For example, the first switch 531, the second switch 541, the third switch 551, and the fourth switch 552 may each include two semiconductor chips, but the embodiments are not limited thereto. Each semiconductor chip may include one or more transistors. Each transistor may include a source, a drain, and a gate.

[0072] The power module 500 may include one or more control pins ( Figure 5 (Not shown in the diagram), these control pins are electrically connected to a semiconductor chip in each of the first switch 531, the second switch 541, the third switch 551, and the fourth switch 552. For example, one or more control pins may be electrically connected to the gate of one or more transistors in each of the semiconductor chips of the first switch 531, the second switch 541, the third switch 551, and the fourth switch 552.

[0073] The semiconductor chips in the first switch 531 can be arranged in a symmetrical gate wiring arrangement. For example, the gates of one or more transistors in each semiconductor chip of the first switch 531 can be electrically connected to a first control pin in one or more control pins, such that the gates of one or more transistors in each semiconductor chip of the first switch 531 can simultaneously (or substantially simultaneously) receive control signals from the first control pin. For example, the symmetrical gate wiring arrangement may include wiring the gate control signals in a separate metal layer.

[0074] The semiconductor chips in the second switch 541 can be arranged in a symmetrical gate wiring arrangement. For example, the gates of one or more transistors in each semiconductor chip of the second switch 541 can be electrically connected to a second control pin in one or more control pins, such that the gates of one or more transistors in each semiconductor chip of the second switch 541 can simultaneously (or substantially simultaneously) receive control signals from the second control pin, but the embodiment is not limited thereto. For example, the gates of one or more transistors in each semiconductor chip of the second switch 541 can be electrically connected to the first control pin.

[0075] The semiconductor chips in the third switch 551 can be arranged in a symmetrical gate wiring arrangement. For example, the gates of one or more transistors in each semiconductor chip of the third switch 551 can be electrically connected to a third control pin among one or more control pins, such that the gates of one or more transistors in each semiconductor chip of the third switch 551 can simultaneously (or substantially simultaneously) receive control signals from the third control pin, but the embodiments are not limited thereto. For example, the gates of one or more transistors in each semiconductor chip of the third switch 551 can be electrically connected to the first control pin or the second control pin.

[0076] The semiconductor chips in the fourth switch 552 can be arranged in a symmetrical gate wiring arrangement. For example, the gates of one or more transistors in each semiconductor chip of the fourth switch 552 can be electrically connected to a fourth control pin among one or more pins, such that the gates of one or more transistors in each semiconductor chip of the fourth switch 552 can simultaneously (or substantially simultaneously) receive control signals from the fourth control pin, but the embodiments are not limited thereto. For example, the gates of one or more transistors in each semiconductor chip of the fourth switch 552 can be electrically connected to a first control pin, a second control pin, or a third control pin.

[0077] The first switch 531, the second switch 541, the third switch 551, and the fourth switch 552 may include semiconductor chips arranged with their drains facing downwards. For example, the drains of the transistors in each of the semiconductor chips in the first switch 531, the second switch 541, the third switch 551, and the fourth switch 552 may be physically oriented in the same direction.

[0078] The power module 500 may include one or more spacers 545 disposed between the drain, gate, and / or source layers of a semiconductor chip in one or more of the first switch 531, the second switch 541, the third switch 551, and the fourth switch 552. The one or more spacers 545 may include a conductive material.

[0079] The power module 500 may have a symmetrical arrangement with respect to the first switch 531, the second switch 541, the third switch 551, the fourth switch 552, the positive DC power connector 510, the negative DC power connector 520, the neutral power connector 515, and the AC power connector 525. For example, the first power loop 570 between the positive DC power connector 510 and the neutral power connector 515 may be symmetrical with respect to the second power loop 580 between the negative DC power connector 520 and the neutral power connector 515.

[0080] The DC loop inductance measured in the first power loop 570 can be approximately 12.9 nH, and the DC loop inductance measured in the second power loop 580 can be approximately 12.9 nH. The 1MHz loop inductance measured in the first power loop 570 can be approximately 6.1 nH, and the 1MHz loop inductance measured in the second power loop 580 can be approximately 6.1 nH. However, this is an example, and the embodiment is not limited thereto.

[0081] Figure 6 A power module with four chip switches arranged in a drain-down configuration is depicted according to one or more embodiments. Power module 600 may include a first switch 631, a second switch 641, a third switch 651, a fourth switch 652, a positive DC power connector 610, a negative DC power connector 620, a neutral power connector 615, and an AC power connector 625. For simplicity, power module 600 and power module 500 (see, for example, see...) Figure 5 There may be many similarities, which will not be discussed further. For the sake of brevity, only the differences between power module 500 and power module 600 will be described.

[0082] The first switch 631, the second switch 641, the third switch 651, and the fourth switch 652 may each include one or more semiconductor chips. For example, the first switch 631, the second switch 641, the third switch 651, and the fourth switch 652 may each include four semiconductor chips, but the embodiments are not limited thereto. Each semiconductor chip may include one or more transistors. Each transistor may include a source, a drain, and a gate.

[0083] The power module 600 may include one or more spacers 645 disposed between the drain, gate, and / or source layers of a semiconductor chip in one or more of the first switch 631, the second switch 641, the third switch 651, and the fourth switch 652. The one or more spacers 645 may include a conductive material.

[0084] The DC loop inductance measured in the first power loop 670 can be approximately 17.3 nH, and the DC loop inductance measured in the second power loop 680 can be approximately 16.3 nH. The 1MHz loop inductance measured in the first power loop 670 can be approximately 5.1 nH, and the 1MHz loop inductance measured in the second power loop 680 can be approximately 5.0 nH. However, the embodiment is not limited thereto. For example, the first power loop 670 and the second power loop 680 can be arranged to have symmetrical loop inductances and / or have the same inductance.

[0085] Figure 7 A power module with two-chip switches configured with drain-down and source-down orientations is depicted according to one or more embodiments. Power module 700 may include a first switch 731, a second switch 741, a third switch 751, a fourth switch 752, a positive DC power connector 710, a negative DC power connector 720, a neutral power connector 715, and an AC power connector 725. For simplicity, power module 700 and power module 500 (see, for example, see...) Figure 5 There may be many similarities, which will not be discussed further. For the sake of brevity, only the differences between power module 500 and power module 700 will be described.

[0086] The first switch 731, the second switch 741, the third switch 751, and the fourth switch 752 may each include two semiconductor chips arranged with their drains facing down and their sources facing down. For example, the transistors in the semiconductor chips of the second switch 741, the third switch 751, and the fourth switch 752 may physically have drains facing a first direction, and the transistors in the semiconductor chip of the first switch 731 may physically have sources facing a first direction, but the embodiment is not limited thereto. The transistors in the semiconductor chips of the second switch 741, the third switch 751, and the fourth switch 752 may physically have sources facing a second direction, and the transistors in the semiconductor chip of the first switch 731 may physically have drains facing a second direction, but the embodiment is not limited thereto. The first direction may be opposite to the second direction. The power module 700 may not include spacers (e.g., one or more spacers 545), but the embodiment is not limited thereto.

[0087] The DC loop inductance measured in the first power loop 770 is approximately 13.0 nH, and the DC loop inductance measured in the second power loop 780 is also approximately 13.0 nH. The 1MHz loop inductance measured in the first power loop 770 is approximately 6.2 nH, and the 1MHz loop inductance measured in the second power loop 780 is also approximately 6.2 nH.

[0088] Figure 8 A power module with a four-chip switch configured with drain-down and source-down characteristics is depicted according to one or more embodiments. Power module 800 may include a first switch 831, a second switch 841, a third switch 851, a fourth switch 852, a positive DC power connector 810, a negative DC power connector 820, a neutral power connector 815, and an AC power connector 825. For simplicity, power module 800 and power module 600 (see, for example, see...) Figure 6 There may be many similarities, which will not be discussed further. For the sake of brevity, only the differences between power module 600 and power module 800 will be described.

[0089] The first switch 831, the second switch 841, the third switch 851, and the fourth switch 852 may each include four semiconductor chips arranged with their drains and sources facing downwards. For example, the transistors in the semiconductor chips of the second switch 841, the third switch 851, and the fourth switch 852 may physically have drains facing a first direction, and the transistors in the semiconductor chip of the first switch 831 may physically have sources facing a first direction, but the embodiment is not limited thereto. The transistors in the semiconductor chips of the second switch 841, the third switch 851, and the fourth switch 852 may physically have sources facing a second direction, and the transistors in the semiconductor chip of the first switch 831 may physically have drains facing a second direction, but the embodiment is not limited thereto. The first direction may be opposite to the second direction. The power module 800 may not include spacers (e.g., one or more spacers 645), but the embodiment is not limited thereto.

[0090] The DC loop inductance measured in the first power loop 870 is approximately 16.1 nH, and the DC loop inductance measured in the second power loop 880 is approximately 16.4 nH. The 1MHz loop inductance measured in the first power loop 870 is approximately 5.2 nH, and the 1MHz loop inductance measured in the second power loop 880 is approximately 5.2 nH.

[0091] Figure 9 A side view of a power module according to one or more embodiments is depicted. The power module device 900 includes a power module 910 and a large-capacity capacitor 930. Figure 9 The power module 910 may include one or more of power modules 500, 600, 700, or 800. For example, power module 910 may include three power modules for a three-phase system. Figure 9 (Not shown in the image). For example, see reference. Figure 2The power module 910 may include a first power module corresponding to ΦA, a second power module corresponding to ΦB, and a third power module corresponding to ΦC.

[0092] The power module assembly 900 may include one or more heat sinks on the power module 910. The one or more heat sinks may include a first heat sink 920 and a second heat sink 925. The first heat sink 920 may be disposed on the power module 910 such that it is disposed on (e.g., directly disposed on, or in contact with) a first side surface 921 of the power module 910. The second heat sink 925 may be disposed on the power module 910 such that it is disposed on (e.g., directly disposed on, or in contact with) a second side surface 926 of the power module 910. The first side surface 921 of the power module 910 may be a top side surface, and the second side surface 926 of the power module 910 may be a bottom side surface.

[0093] The first heat sink 920 and the second heat sink 925 may be disposed on a combination of one or more power modules. For example, the first heat sink 920 may be disposed on a power module assembly including a combination of two or more of any one of power modules 500, 600, 700 and / or 800, such that the first heat sink 920 may be disposed on (e.g., directly disposed on or in contact with) a first side surface (e.g., top side surface) of two or more of power modules 500, 600, 700 and / or 800.

[0094] The first heat sink 920 and the second heat sink 925 may be disposed on a combination of one or more power modules. For example, the second heat sink 925 may be disposed on a power module assembly including a combination of two or more of any one of power modules 500, 600, 700 and / or 800, such that the second heat sink 925 may be disposed on (e.g., directly disposed on or in contact with) the second side surface (e.g., bottom surface) of two or more of power modules 500, 600, 700 and / or 800.

[0095] The power module 910 can be electrically connected to the large-capacity capacitor 930. The large-capacity capacitor 930 can be arranged in a top-to-bottom mounting arrangement, such that the power module 910 is disposed on the top side surface of the large-capacity capacitor, but the embodiments are not limited thereto.

[0096] According to one or more embodiments, an inverter including a power module with switches arranged in a T-shape can reduce parasitic inductance, which can enable higher switching speeds when the complete commutation circuit is combined with large-capacity capacitors having similarly low parasitic inductance. According to one or more embodiments, the reduced parasitic inductance enables electromagnetic compatibility (EMC) compliance with minimal or less effort. According to one or more embodiments, an inverter including a power module with switches arranged in a T-shape can be advantageous because such an inverter can reduce the number of power switches per module. According to one or more embodiments, an inverter including a power module with a T-shape can be dual-sided cooled, which can benefit the operation and reliability of the power module.

[0097] Other embodiments of this disclosure will be apparent to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. The specification and examples are intended to be illustrative only, and the true scope and spirit of the invention are indicated by the following claims.

Claims

1. A system comprising: An inverter for converting DC power from a battery into AC power to drive a motor, wherein the inverter includes: A first power supply module, the first power supply module comprising: A first switch, which is electrically connected to the positive DC power supply terminal and the AC power supply terminal; A second switch, the second switch being electrically connected to the negative DC power terminal and the AC power terminal; and Two switches are electrically connected to the neutral power terminal and the AC power terminal.

2. The system according to claim 1, further comprising: The first heat sink is located on the first side of the first power module; as well as The second heat sink is located on the second side of the first power module.

3. The system of claim 1, further comprising a capacitor electrically connected to the first power module.

4. The system according to claim 1, further comprising: Second power supply module; as well as Third power module, The first power module corresponds to the first phase of the motor, the second power module corresponds to the second phase of the motor, and the third power module corresponds to the third phase of the motor.

5. The system according to claim 4, further comprising: First radiator; as well as Second radiator, The first heat sink is located on the first side surface of the first power module, on the first side surface of the second power module, and on the first side surface of the third power module. The second heat sink is located on the second side surface of the first power module, on the second side surface of the second power module, and on the second side surface of the third power module.

6. The system of claim 1, wherein the two switches include a third switch and a fourth switch arranged in series.

7. The system of claim 6, wherein each of the first switch, the second switch, the third switch and the fourth switch comprises two or more semiconductor chips.

8. The system of claim 7, wherein each of the two or more semiconductor chips in the first switch, the second switch, the third switch and the fourth switch is arranged with symmetrical gate wiring.

9. The system of claim 7, wherein two or more of the semiconductor chips in the first switch, the second switch, the third switch and the fourth switch are arranged with the drain facing downwards.

10. The system according to claim 1, wherein the two switches constitute a switch group.

11. The system according to claim 7, wherein: The two or more semiconductor chips in the second switch, the third switch, and the fourth switch are arranged with the drain facing downwards, and The two or more semiconductor chips in the first switch are arranged with the source facing downwards.

12. The system according to claim 1, further comprising: The battery is configured to supply the DC power to the inverter; as well as The motor is configured to receive AC power from the inverter to drive the motor. The system is provided as a vehicle comprising the inverter, the battery, and the motor.

13. A system including a power supply module for an inverter, the power supply module comprising: A first switch, which is electrically connected to the positive DC power supply terminal and the AC power supply terminal; The second switch is electrically connected to the negative DC power supply terminal and the AC power supply terminal. as well as Two switches are electrically connected to the neutral power terminal and the AC power terminal.

14. The system of claim 13, wherein the two switches comprise a third switch and a fourth switch, and The first switch, the second switch, the third switch, and the fourth switch each include one or more semiconductor chips arranged with symmetrical gate wiring.

15. The system of claim 14, wherein one or more of the semiconductor chips in the first switch, the second switch, the third switch, and the fourth switch are arranged with the drain facing down.

16. The system of claim 14, wherein the power module includes one or more spacers.

17. The system according to claim 14, wherein: One or more semiconductor chips in the second switch, the third switch, and the fourth switch are arranged with the drain facing downwards, and The one or more semiconductor chips in the first switch are arranged with the source facing down.

18. The system of claim 13, further comprising a capacitor electrically connected to the power supply module.

19. A system including a power supply module, the power supply module comprising: Positive DC power supply connector; Negative DC power supply connector; Neutral power supply connector; AC power connector; A first switch is electrically connected to the positive DC power supply terminal and the AC power supply terminal. The second switch is electrically connected to the negative DC power terminal and the AC power terminal. as well as Two switches are electrically connected to the neutral power terminal and the AC power terminal.

20. The system of claim 19, further comprising: First radiator; as well as Second radiator, The two switches mentioned above include a third switch and a fourth switch. The first heat sink is located on the first surface of the power module, and The second heat sink is located on the second surface of the power module.

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