Radio frequency front-end module and electronic equipment

Abstract

The invention relates to the technical field of radio frequency, in particular to a radio frequency front-end module and electronic equipment, and the radio frequency front-end module comprises a substrate; the power amplification chip comprises a pre-stage amplification circuit and a post-stage amplification circuit; a first power supply port and a second power supply port; the pre-stage power supply inductor and the post-stage power supply inductor are arranged on the substrate, the first end of the pre-stage power supply inductor is connected with the power supply end of the pre-stage amplification circuit, the second end of the pre-stage power supply inductor is connected with a first power supply port, and the first power supply port is connected with a first power supply inductor arranged on the bearing plate; the first end of the post-stage power supply inductor is connected with the power supply end of the post-stage amplification circuit, the second end of the post-stage power supply inductor is connected with a second power supply port, the second power supply port is connected with a second power supply inductor arranged on the bearing plate, and the inductance value of the pre-stage power supply inductor is larger than that of the first power supply inductor. The inductance value of the post-stage power supply inductor is larger than that of the second power supply inductor. The power supply stability can be improved.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and electronic device. Background Technology

[0002] In the RF front-end module, the power supply terminals of the multi-stage amplifier circuit of the power amplifier chip need to be connected to the power supply port through a power supply inductor to ensure power supply stability and suppress circuit noise.

[0003] In related technologies, the power supply inductor of multi-stage amplifier circuits is prone to forming loops, which can cause electromagnetic coupling interference and disrupt the stability of the power supply voltage. Summary of the Invention

[0004] In view of the above problems, this application provides a radio frequency front-end module and electronic device to improve the technical problem of unstable power supply.

[0005] In a first aspect, embodiments of this application provide a radio frequency front-end module for mounting on a carrier board, comprising: substrate; A power amplifier chip is disposed on the substrate and includes a preamplifier circuit and a postamplifier circuit, wherein the input terminal of the postamplifier circuit is connected to the output terminal of the preamplifier circuit. A first power supply port and a second power supply port are disposed on the substrate; and A pre-amplifier power supply inductor and a post-amplifier power supply inductor are disposed on the substrate. The first end of the pre-amplifier power supply inductor is connected to the power supply terminal of the pre-amplifier circuit, and the second end of the pre-amplifier power supply inductor is connected to the first power supply port. The first power supply port is used to connect to a first power supply inductor disposed on the carrier plate. The first end of the post-amplifier power supply inductor is connected to the power supply terminal of the post-amplifier circuit, and the second end of the post-amplifier power supply inductor is connected to the second power supply port. The second power supply port is used to connect to a second power supply inductor disposed on the carrier plate. The inductance value of the pre-amplifier power supply inductor is greater than the inductance value of the first power supply inductor, and the inductance value of the post-amplifier power supply inductor is greater than the inductance value of the second power supply inductor.

[0006] Optionally, the inductance value of the preceding power supply inductor is equal to or greater than twice the inductance value of the first power supply inductor; The inductance value of the subsequent power supply inductor is equal to or greater than twice the inductance value of the second power supply inductor.

[0007] Optionally, the first power supply port is a battery power supply port, and the second power supply port is a power supply port.

[0008] Optionally, when the power amplifier chip is configured to be in a first power mode, the voltage of the power supply port is V1, and when the power amplifier chip is configured to be in a second power mode, the voltage of the power supply port is V2. When the power amplifier chip is configured in a first power mode, the voltage of the battery power supply port is V3; when the power amplifier chip is configured in a second power mode, the voltage of the battery power supply port is V4. Wherein, the maximum output power of the power amplifier chip in the first power mode is greater than the maximum output power of the power amplifier chip in the second power mode, V1 is greater than V2, and V3 is equal to V4.

[0009] Optionally, the inductance value of the front-end power supply inductor is in the range of [0.5nH, 3nH]; The inductance value of the subsequent power supply inductor is in the range of [0.5nH, 3nH].

[0010] Optionally, the preamplifier circuit is a single-ended amplifier circuit, which includes a first transistor; the postamplifier circuit is a single-ended amplifier circuit, which includes a second transistor; the output terminal of the first transistor is connected to the input terminal of the second transistor. The first transistor and the second transistor are bipolar transistors, with the first terminal of the front-stage power supply inductor connected to the collector of the first transistor and the first terminal of the rear-stage power supply inductor connected to the collector of the second transistor; or, the first transistor and the second transistor are field-effect transistors, with the first terminal of the front-stage power supply inductor connected to the source of the first transistor and the first terminal of the rear-stage power supply inductor connected to the source of the second transistor.

[0011] Optionally, the preamplifier circuit is a single-ended amplifier circuit, and the preamplifier circuit includes a third transistor; The subsequent amplifier circuit is a differential amplifier circuit, which includes a fourth transistor and a fifth transistor. The fourth transistor is configured to amplify a first radio frequency signal, and the fifth transistor is configured to amplify a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of differential signals. The RF front-end module includes two power supply inductors. One power supply inductor has its first end connected to the power supply terminal of the fourth transistor and its second end connected to the second power supply port. The other power supply inductor has its first end connected to the power supply terminal of the fifth transistor and its second end connected to the second power supply port. The inductance values ​​of the two power supply inductors are equal to or greater than the inductance value of the second power supply inductor.

[0012] Optionally, the preamplifier circuit is a differential amplifier circuit, which includes a sixth transistor and a seventh transistor. The sixth transistor is configured to amplify a third radio frequency signal, and the seventh transistor is configured to amplify a fourth radio frequency signal. The third radio frequency signal and the fourth radio frequency signal are a pair of differential signals. The subsequent amplifier circuit is a differential amplifier circuit, which includes an eighth transistor and a ninth transistor. The eighth transistor is configured to amplify the third radio frequency signal, and the ninth transistor is configured to amplify the fourth radio frequency signal. The RF front-end module includes two front-end power supply inductors and two rear-end power supply inductors; one of the front-end power supply inductors has a first end connected to the power supply terminal of the sixth transistor and a second end connected to the first power supply port, and the other front-end power supply inductor has a first end connected to the power supply terminal of the seventh transistor and a second end connected to the first power supply port; one of the rear-end power supply inductors has a first end connected to the power supply terminal of the eighth transistor and a second end connected to the second power supply port, and the other rear-end power supply inductor has a first end connected to the power supply terminal of the ninth transistor and a second end connected to the second power supply port; The inductance values ​​of the two preceding power supply inductors are each equal to or greater than the inductance value of the first power supply inductor; The inductance values ​​of the two subsequent power supply inductors are both equal to or greater than the inductance value of the second power supply inductor.

[0013] Optionally, the radio frequency front-end module includes a first power amplification unit, a second power amplification unit, and a third power amplification unit integrated on the same power amplification chip; the first power amplification unit is configured to amplify radio frequency signals in a first frequency band, the second power amplification unit is configured to amplify radio frequency signals in a second frequency band, and the third power amplification unit is configured to amplify radio frequency signals in a third frequency band. The front-stage power supply inductor includes a first front-stage power supply inductor, a second front-stage power supply inductor, and a third front-stage power supply inductor; the rear-stage power supply inductor includes a first rear-stage power supply inductor, a second rear-stage power supply inductor, and a third rear-stage power supply inductor. The power supply terminal of the preamplifier circuit of the first power amplifier unit is connected to the first preamplifier power supply inductor, and the power supply terminal of the postamplifier circuit of the first power amplifier unit is connected to the first postamplifier power supply inductor. The power supply terminal of the preamplifier circuit of the second power amplifier unit is connected to the second preamplifier power supply inductor, and the power supply terminal of the postamplifier circuit of the second power amplifier unit is connected to the second postamplifier power supply inductor. The power supply terminal of the preamplifier circuit of the third power amplifier unit is connected to the third preamplifier power supply inductor, and the power supply terminal of the postamplifier circuit of the third power amplifier unit is connected to the third postamplifier power supply inductor.

[0014] Optionally, the first pre-stage power supply inductor, the second pre-stage power supply inductor, and the third pre-stage power supply inductor are arranged close to each other, and the first post-stage power supply inductor, the second post-stage power supply inductor, and the third post-stage power supply inductor are arranged close to each other.

[0015] Optionally, the RF front-end module further includes a first output matching circuit, a second output matching circuit, and a third output matching circuit disposed on the substrate. The first output matching circuit is connected to the output terminal of the first power amplifier unit, the second output matching circuit is connected to the output terminal of the second power amplifier unit, and the third output matching circuit is connected to the output terminal of the third power amplifier unit. The first output matching circuit is positioned closer to the output terminal of the first power amplifier unit than the output terminals of the second and third power amplifier units. The second output matching circuit is positioned closer to the output terminal of the second power amplifier unit than the output terminals of the first power amplifier unit and the third power amplifier unit; The third output matching circuit is positioned closer to the output terminal of the third power amplifier unit than the output terminal of the first power amplifier unit and the output terminal of the second power amplifier unit.

[0016] Optionally, the first frequency band is less than the second frequency band, and the second frequency band is less than the third frequency band; wherein, the first output matching circuit includes at least one inductor and at least one capacitor, the second output matching circuit includes a first transformer, at least one inductor and at least one capacitor, and the third output matching circuit includes a second transformer, at least one inductor and at least one capacitor.

[0017] Optionally, at least one inductor of the first output matching circuit includes a first inductor, a second inductor, and a third inductor, and at least one capacitor of the first output matching circuit includes a first capacitor, a second capacitor, and a third capacitor. The first terminal of the first capacitor is connected to the output terminal of the first power amplifier unit. The second terminal of the first capacitor is connected to the first terminal of the first inductor. The second terminal of the first inductor is configured to be grounded. The first terminal of the second inductor is connected to the first terminal of the first capacitor. The second terminal of the second inductor is connected to the first terminal of the second capacitor. The second terminal of the second capacitor is connected to the signal output port of the substrate. The first terminal of the third capacitor is connected to the second terminal of the second inductor. The second terminal of the third capacitor is configured to be grounded. The first terminal of the third inductor is connected to the second terminal of the second capacitor. The second terminal of the third inductor is configured to be grounded.

[0018] Optionally, at least one inductor of the second output matching circuit includes a fourth inductor and a fifth inductor, at least one capacitor of the second output matching circuit includes a fourth capacitor, a fifth capacitor and a sixth capacitor, and the first transformer includes a first primary winding and a first secondary winding coupled to each other. The first terminal of the fourth capacitor is connected to the output terminal of the second power amplifier unit. The second terminal of the fourth capacitor is connected to the first terminal of the fourth inductor, and the second terminal of the fourth inductor is grounded. The first terminal of the fifth capacitor is connected to the first terminal of the fourth capacitor. The second terminal of the fifth capacitor is connected to the first terminal of the first primary winding, and the second terminal of the first primary winding is grounded. The first terminal of the first primary winding is connected to the first terminal of the fifth inductor, and the second terminal of the first primary winding is grounded. The second terminal of the fifth inductor is connected to the signal output port of the substrate. The first terminal of the sixth capacitor is connected to the second terminal of the fifth inductor, and the second terminal of the sixth capacitor is grounded.

[0019] Optionally, at least one inductor of the third output matching circuit includes a sixth inductor and a seventh inductor, at least one capacitor of the third output matching circuit includes a seventh capacitor, an eighth capacitor and a ninth capacitor, and the second transformer includes a second primary winding and a second secondary winding coupled to each other. The first terminal of the seventh capacitor is connected to the output terminal of the third power amplifier unit. The second terminal of the seventh capacitor is connected to the first terminal of the sixth inductor, and the second terminal of the sixth inductor is grounded. The first terminal of the eighth capacitor is connected to the first terminal of the seventh capacitor. The second terminal of the eighth capacitor is connected to the first terminal of the second primary winding, and the second terminal of the second primary winding is grounded. The first terminal of the second secondary winding is connected to the first terminal of the seventh inductor, and the second terminal of the second secondary winding is grounded. The second terminal of the seventh inductor is connected to the signal output port of the substrate. The first terminal of the ninth capacitor is connected to the second terminal of the seventh inductor, and the second terminal of the ninth capacitor is grounded.

[0020] Optionally, the RF front-end module further includes a substrate signal input port and a substrate signal output port disposed on the substrate, and the power amplifier chip further includes a chip signal input port and a chip signal output port. The substrate signal input port is connected to the chip signal input port, the chip signal input port is connected to the input terminal of the preamplifier circuit, the output terminal of the postamplifier circuit is connected to the chip signal output port, and the chip signal output port is connected to the substrate signal output port. The pre-stage power supply inductor is positioned closer to the substrate signal input port and the chip signal input port than the substrate signal output port and the chip signal output port; The power supply inductor is positioned closer to the signal output port of the substrate and the signal output port of the chip than the signal input port of the substrate and the signal input port of the chip.

[0021] The RF front-end module provided in this application embodiment has its power supply terminals for the pre-amplifier circuit and the post-amplifier circuit of the power amplifier chip connected to the first power supply port and the second power supply port on the substrate via the pre-amplifier inductor and the post-amplifier inductor, respectively. The pre-amplifier inductor and the post-amplifier inductor can independently provide stable power supply voltages to the pre-amplifier circuit and the post-amplifier circuit, effectively preventing the formation of loops between them, ensuring power supply voltage stability, and reducing harmonic interference. Furthermore, the inductance value of the pre-amplifier inductor on the substrate is greater than the inductance value of the first power supply inductor on the carrier plate, and the inductance value of the post-amplifier inductor on the substrate is greater than the inductance value of the second power supply inductor on the carrier plate. This not only facilitates adjusting the inductance values ​​of the first and second power supply inductors outside the module to achieve flexible impedance adjustment according to actual conditions, but also reduces the impact of adjusting the inductance values ​​of the first and second power supply inductors outside the RF front-end module on the RF front-end module's performance, avoiding large fluctuations in the overall performance of the RF front-end module, thereby improving the stability of the RF front-end module.

[0022] Secondly, embodiments of this application provide a radio frequency front-end module, including: substrate; A power amplifier chip is disposed on the substrate and includes a preamplifier circuit and a postamplifier circuit, wherein the input terminal of the postamplifier circuit is connected to the output terminal of the preamplifier circuit. A first power supply port and a second power supply port are disposed on the substrate; and A pre-amplifier power supply inductor and a post-amplifier power supply inductor are disposed on the substrate. The first end of the pre-amplifier power supply inductor is connected to the power supply terminal of the pre-amplifier circuit, and the second end of the pre-amplifier power supply inductor is connected to the first power supply port. The first end of the post-amplifier power supply inductor is connected to the power supply terminal of the post-amplifier circuit, and the second end of the post-amplifier power supply inductor is connected to the second power supply port. The first power supply port is a battery power supply port, and the second power supply port is a power supply port. When the power amplifier chip is configured in a first power mode, the voltage of the power supply port is V1; when the power amplifier chip is configured in a second power mode, the voltage of the power supply port is V2. When the power amplifier chip is configured in a first power mode, the voltage of the battery power supply port is V3; when the power amplifier chip is configured in a second power mode, the voltage of the battery power supply port is V4. Wherein, the maximum output power of the power amplifier chip in the first power mode is greater than the maximum output power of the power amplifier chip in the second power mode, V1 is greater than V2, and V3 is equal to V4.

[0023] Optionally, the radio frequency front-end module further includes a control chip disposed on the substrate, and the voltage of the battery power supply port is associated with the control voltage output by the control chip.

[0024] Optionally, the substrate is disposed on a carrier plate; The first power supply port is used to connect to the first power supply inductor disposed on the carrier plate, and the inductance value of the front-stage power supply inductor is greater than the inductance value of the first power supply inductor; The second power supply port is used to connect to the second power supply inductor disposed on the carrier plate, and the inductance value of the subsequent power supply inductor is greater than the inductance value of the second power supply inductor.

[0025] The RF front-end module provided in this application embodiment has its power supply terminals for the pre-amplifier circuit and the post-amplifier circuit of the power amplifier chip connected to the first power supply port and the second power supply port on the substrate via the pre-amplifier power supply inductor and the post-amplifier power supply inductor, respectively. The pre-amplifier power supply inductor and the post-amplifier power supply inductor can independently provide stable power supply voltages for the pre-amplifier circuit and the post-amplifier circuit, which can effectively prevent the pre-amplifier power supply inductor and the post-amplifier power supply inductor from forming a loop, ensuring the stability of the power supply voltage and reducing harmonic interference. Furthermore, since the power supply voltage output from the battery power supply port is usually related to the control voltage of other chips (e.g., control chips) in the RF front-end module, it is not easy to change. In order to adapt to different operating modes, the power amplifier chip often needs a wide range of adjustable power supply voltage. Therefore, the embodiments of this application adjust the voltage of the power supply port according to the power mode of the power amplifier chip without changing the voltage of the battery power supply port. In the first power mode with higher maximum output power, a higher power supply port voltage is used for power supply, and in the second power mode with lower maximum output power, a lower power supply port voltage is used for power supply. This not only meets the power supply requirements of different power modes, but also ensures that other performance of the RF front-end module is not affected, further improving the working stability of the RF front-end module.

[0026] Thirdly, embodiments of this application provide an electronic device, including: Support plate; A first power supply inductor and a second power supply inductor are disposed on the carrier plate; and An RF front-end module includes a substrate disposed on a carrier board, and a power amplifier chip, a first power supply port, a second power supply port, a third power supply inductor, and a fourth power supply inductor disposed on the substrate. The power amplifier chip includes a pre-amplifier circuit and a post-amplifier circuit. The input terminal of the post-amplifier circuit is connected to the output terminal of the pre-amplifier circuit. The first terminal of the third power supply inductor is connected to the power supply terminal of the pre-amplifier circuit, and the second terminal of the third power supply inductor is connected to the first power supply port. The first power supply port is connected to the first power supply inductor. The first terminal of the fourth power supply inductor is connected to the power supply terminal of the post-amplifier circuit, and the second terminal of the fourth power supply inductor is connected to the second power supply port. The second power supply port is connected to the second power supply inductor. The inductance value of the third power supply inductor is greater than the inductance value of the first power supply inductor, and the inductance value of the fourth power supply inductor is greater than the inductance value of the second power supply inductor.

[0027] Optionally, the electronic device further includes: A first decoupling capacitor is disposed on the carrier plate, a first terminal of the first decoupling capacitor is connected to a second terminal of the first power supply inductor, and the second terminal of the first decoupling capacitor is configured to be grounded; and A second decoupling capacitor is disposed on the carrier plate. The first end of the second decoupling capacitor is connected to the second end of the second power supply inductor, and the second end of the second decoupling capacitor is configured to be grounded.

[0028] The electronic device provided in this application embodiment has its power supply terminals for the pre-amplifier circuit and the post-amplifier circuit of the power amplifier chip connected to the first power supply port and the second power supply port on the substrate via a third power supply inductor and a fourth power supply inductor, respectively. The third power supply inductor and the fourth power supply inductor can independently provide stable power supply voltages to the pre-amplifier circuit and the post-amplifier circuit, effectively preventing the third power supply inductor and the fourth power supply inductor from forming a loop, ensuring the stability of the power supply voltage, and reducing harmonic interference. Moreover, the inductance value of the third power supply inductor on the substrate is greater than the inductance value of the first power supply inductor on the carrier plate, and the inductance value of the fourth power supply inductor on the substrate is greater than the inductance value of the second power supply inductor on the carrier plate. This not only facilitates the adjustment of the inductance values ​​of the first power supply inductor and the second power supply inductor according to actual conditions to achieve flexible impedance adjustment, but also reduces the impact of adjusting the inductance values ​​of the first power supply inductor and the second power supply inductor outside the RF front-end module on the performance of the RF front-end module, avoiding large fluctuations in the overall performance of the RF front-end module, thereby improving the stability of the RF front-end module.

[0029] These or other aspects of this application will become more apparent in the following description of the embodiments. Attached Figure Description

[0030] Figure 1 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0031] Figure 2 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0032] Figure 3 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0033] Figure 4 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0034] Figure 5 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0035] Figure 6 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0036] Figure 7 A circuit diagram of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0037] Figure 8 A circuit diagram of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0038] Figure 9 A circuit diagram of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0039] Figure 10 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0040] Figure 11 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 2 of this application is shown.

[0041] Figure 12 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 2 of this application is shown.

[0042] Figure 13 A schematic diagram of the structure of the electronic device provided in Embodiment 3 of this application is shown.

[0043] Figure 14 A schematic diagram of the structure of the electronic device provided in Embodiment 3 of this application is shown. Detailed Implementation

[0044] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0045] To enable those skilled in the art to better understand the solutions of this application, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0046] In the embodiments of this application, it should be noted that, in this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0047] Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0048] In the description of the embodiments of this application, the words "example" or "for example" are used to indicate exemplification, illustration, or description. Any embodiment or design described as "example" or "for example" in the embodiments of this application is not to be construed as being more preferred or having more advantages than another embodiment or design. The use of the words "example" or "for example" is intended to present relative concepts in a clear manner.

[0049] Furthermore, in the embodiments of this application, "multiple" refers to two or more. Therefore, in the embodiments of this application, "multiple" can also be understood as "at least two". "At least one" can be understood as one or more, such as one, two, or more. For example, including at least one means including one, two, or more, and is not limited to which ones are included. For example, including at least one of A, B, and C, then it could include A, B, C, A and B, A and C, B and C, or A and B and C.

[0050] It should be noted that in the embodiments of this application, "and / or" describes the relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after it are in an "or" relationship.

[0051] It should be noted that in the embodiments of this application, "connection" can be understood as electrical connection. The connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components.

[0052] Please refer to Figure 1This application provides an RF front-end module 100, which is mounted on a carrier board 200. The RF front-end module 100 includes a substrate 110, a power amplifier chip 120, a first power supply port 130, a second power supply port 140, a pre-stage power supply inductor L1, and a post-stage power supply inductor L2. The power amplifier chip 120, the first power supply port 130, the second power supply port 140, the pre-stage power supply inductor L1, and the post-stage power supply inductor L2 are all mounted on the substrate 110. The power amplifier chip 120 includes a pre-stage amplifier circuit 121 and a post-stage amplifier circuit 122. The input terminal of the post-stage amplifier circuit 122 is connected to the output terminal of the pre-stage amplifier circuit 121. The first end of the preamplifier power supply inductor L1 is connected to the power supply terminal of the preamplifier circuit 121, and the second end of the preamplifier power supply inductor L1 is connected to the first power supply port 130. The first power supply port 130 is used to connect the first power supply inductor L3, which is mounted on the carrier plate 200. The first end of the power supply inductor L2 is connected to the power supply terminal of the power supply circuit 122, and the second end of the power supply inductor L2 is connected to the second power supply port 140, which is used to connect the second power supply inductor L4, which is mounted on the carrier plate 200. The inductance value of the preamplifier power supply inductor L1 is greater than that of the first power supply inductor L3, and the inductance value of the power supply inductor L2 is greater than that of the second power supply inductor L4.

[0053] In this embodiment, the power supply terminals of the preamplifier circuit 121 and the postamplifier circuit 122 of the power amplifier chip 120 are respectively connected to the first power supply port 130 and the second power supply port 140 on the substrate 110 via the preamplifier power supply inductor L1 and the postamplifier power supply inductor L2. The preamplifier power supply inductor L1 and the postamplifier power supply inductor L2 can independently provide stable power supply voltages to the preamplifier circuit 121 and the postamplifier circuit 122, which can effectively prevent the preamplifier power supply inductor L1 and the postamplifier power supply inductor L2 from forming a loop, ensuring the stability of the power supply voltage and reducing harmonic interference. Furthermore, the inductance value of the front-end power supply inductor L1 located on the substrate 110 is greater than the inductance value of the first power supply inductor L3 located on the carrier plate 200, and the inductance value of the rear-end power supply inductor L2 located on the substrate 110 is greater than the inductance value of the second power supply inductor L4 located on the carrier plate 200. This not only facilitates the adjustment of the inductance values ​​of the first power supply inductor L3 and the second power supply inductor L4 according to actual conditions to achieve flexible impedance adjustment, but also reduces the impact of adjusting the inductance values ​​of the first power supply inductor L3 and the second power supply inductor L4 outside the RF front-end module 100 on the performance of the RF front-end module 100, avoids large fluctuations in the overall performance of the RF front-end module 100, and improves the stability of the RF front-end module 100.

[0054] In some embodiments, the subsequent amplifier circuit 122 and the preceding amplifier circuit 121 can be directly connected, or they can be indirectly connected. For example, the preceding amplifier circuit 121 can be a first-stage amplifier circuit, and the subsequent amplifier circuit 122 can be a second-stage amplifier circuit; alternatively, the preceding amplifier circuit 121 can be a first-stage amplifier circuit, and the subsequent amplifier circuit 122 can be a third-stage amplifier circuit; or, the preceding amplifier circuit 121 can be a second-stage amplifier circuit, and the subsequent amplifier circuit 122 can be a third-stage amplifier circuit, as long as the subsequent amplifier circuit 122 is positioned after the preceding amplifier circuit 121.

[0055] In some implementations, the inductance value of the front-stage power supply inductor L1 is equal to or greater than twice the inductance value of the first power supply inductor L3, and the inductance value of the rear-stage power supply inductor L2 is equal to or greater than twice the inductance value of the second power supply inductor L4. For example, the inductance value of the front-stage power supply inductor L1 can be more than twice but less than three times the inductance value of the first power supply inductor L3; or, the inductance value of the front-stage power supply inductor L1 can be more than three times but less than four times the inductance value of the first power supply inductor L3; or, the inductance value of the front-stage power supply inductor L1 can be more than four times but less than five times the inductance value of the first power supply inductor L3, and so on. The inductance value of the power supply inductor L2 can be more than two and less than three times the inductance value of the second power supply inductor L4; or, the inductance value of the power supply inductor L2 can be more than three and less than four times the inductance value of the second power supply inductor L4; or, the inductance value of the power supply inductor L2 can be more than four and less than five times the inductance value of the second power supply inductor L4; or, the inductance value of the power supply inductor L2 can be more than five times the inductance value of the second power supply inductor L4, and so on. In some examples, the inductance value of the power supply inductor L1 can be, but is not limited to, 2 times, 2.1 times, 2.2 times, 2.5 times, 2.7 times, 3 times, 3.2 times, 3.5 times, 3.9 times, 4 times, 4.3 times, 4.5 times, 4.7 times, 5 times, or 6 times the inductance value of the first power supply inductor L3, etc. The inductance value of the power supply inductor L2 can be, but is not limited to, 2 times, 2.1 times, 2.2 times, 2.5 times, 2.7 times, 3 times, 3.2 times, 3.5 times, 3.9 times, 4 times, 4.3 times, 4.5 times, 4.7 times, 5 times, or 6 times that of the second power supply inductor L4.

[0056] In this embodiment, the inductance value of the front-end power supply inductor L1 differs significantly from that of the first power supply inductor L3, and the inductance value of the rear-end power supply inductor L2 differs significantly from that of the second power supply inductor L4. This not only provides a stable power supply voltage to the front-end amplifier circuit 121 and the rear-end amplifier circuit 122 through the front-end power supply inductors L1 and L2 with larger inductance values ​​on the substrate 110, ensuring the stability of the power amplifier chip 120, but also facilitates the adjustment of the inductance values ​​of the first power supply inductors L3 and L4 outside the RF front-end module 100 according to actual conditions to achieve flexible impedance adjustment. Furthermore, it can reduce the impact of adjusting the inductance values ​​of the first power supply inductors L3 and L4 outside the RF front-end module 100 on the performance of the RF front-end module 100, avoid large fluctuations in the overall performance of the RF front-end module 100, and thus improve the stability of the RF front-end module 100.

[0057] In some implementations, the first power supply port 130 is a battery power supply port (Vbatt port), and the second power supply port 140 is a power supply port (VCC port). The battery power supply port (Vbatt port) can provide a stable DC voltage, while the power supply port (VCC port) can flexibly adjust the output voltage / current according to actual needs. The output current range of the power supply port (VCC port) can range from μA to kA, thereby improving power supply efficiency and stability.

[0058] In one implementation, when the power amplifier chip 120 is configured in a first power mode, the voltage at the power supply port is V1. When the power amplifier chip 120 is configured in a second power mode, the voltage at the power supply port is V2. When the power amplifier chip 120 is configured in the first power mode, the voltage at the battery supply port is V3. When the power amplifier chip 120 is configured in the second power mode, the voltage at the battery supply port is V4. Wherein, the maximum output power of the power amplifier chip 120 in the first power mode is greater than the maximum output power of the power amplifier chip 120 in the second power mode, V1 is greater than V2, and V3 is equal to V4. Since the power supply voltage output from the battery power supply port is usually related to the control voltage of other chips (e.g., control chips) in the RF front-end module 100, it is not easy to change. However, the power amplifier chip 120 often requires a wide range of adjustable power supply voltage to adapt to different operating modes. Therefore, the RF front-end module 100 provided in this embodiment can also adjust the voltage of the power supply port according to the power mode of the power amplifier chip 120 without changing the voltage of the battery power supply port. In the first power mode with higher maximum output power, a higher power supply port voltage is used for power supply, and in the second power mode with lower maximum output power, a lower power supply port voltage is used for power supply. This not only meets the power supply requirements of different power modes, but also ensures that other performance of the RF front-end module 100 is not affected, further improving the working stability of the RF front-end module 100.

[0059] It should be noted that in other embodiments, the first power supply port can also be a power supply port (VCC port), and the second power supply port can also be a battery power supply port (Vbatt port). These can be set according to the actual situation, and will not be elaborated here.

[0060] In some implementations, the inductance value of the pre-amplifier power supply inductor L1 ranges from [0.5nH to 3nH]. This not only filters and decouples the power supply path of the pre-amplifier circuit 121 and performs impedance matching to ensure power supply stability, but also ensures the performance of the pre-amplifier power supply inductor L1 while avoiding excessive area occupation of the substrate 110 due to its large size. As an example, the inductance value range of the pre-amplifier power supply inductor L1 can be, but is not limited to, [0.5nH, 1nH], [1nH, 2nH], [1.5nH, 2.5nH], or [2nH, 3nH], etc. For example, the inductance value of the pre-amplifier power supply inductor L1 can be, but is not limited to, 0.5nH, 0.6nH, 0.8nH, 0.9nH, 1nH, 1.2nH, 1.5nH, 1.8nH, 2nH, 2.2nH, 2.5nH, 2.7nH, 2.8nH, or 3nH, etc.

[0061] In some implementations, the inductance value of the power supply inductor L2 ranges from [0.5nH to 3nH]. This not only filters and decouples the power supply path of the subsequent amplifier circuit 122 and performs impedance matching to ensure power supply stability, but also ensures the performance of the power supply inductor L2 while avoiding excessive area occupation of the substrate 110 due to its large size. As an example, the inductance value range of the power supply inductor L2 can be, but is not limited to, [0.5nH, 1nH], [1nH, 2nH], [1.5nH, 2.5nH], or [2nH, 3nH], etc. For example, the inductance value of the power supply inductor L2 can be, but is not limited to, 0.5nH, 0.6nH, 0.8nH, 0.9nH, 1nH, 1.2nH, 1.5nH, 1.8nH, 2nH, 2.2nH, 2.5nH, 2.7nH, 2.8nH, or 3nH, etc.

[0062] In some implementation methods, please refer to Figure 2 The preamplifier circuit 121 is a single-ended amplifier circuit, and it includes a first transistor 1211. The post-amplifier circuit 122 is also a single-ended amplifier circuit, and it includes a second transistor 1221. The output terminal of the first transistor 1211 is connected to the input terminal of the second transistor 1221. In this embodiment, both the preamplifier circuit 121 and the post-amplifier circuit 122 are single-ended amplifier circuits, which effectively simplifies the circuit structure, reduces the number of devices and the layout area on the substrate 110, and is more conducive to the miniaturization of the RF front-end module 100.

[0063] In one implementation, the first transistor 1211 and the second transistor 1221 are bipolar transistors. The first terminal of the front-stage power supply inductor L1 is connected to the collector of the first transistor 1211, and the first terminal of the rear-stage power supply inductor L2 is connected to the collector of the second transistor 1221. As an example, the first transistor 1211 and the second transistor 1221 can be bipolar junction transistors (BJTs) or heterojunction bipolar transistors (HBTs).

[0064] In one implementation, the first transistor 1211 and the second transistor 1221 are field-effect transistors. The first terminal of the front-stage power supply inductor L1 is connected to the source of the first transistor 1211, and the first terminal of the rear-stage power supply inductor L2 is connected to the source of the second transistor 1221. As an example, the first transistor 1211 and the second transistor 1221 can be metal-oxide-semiconductor (MOS) field-effect transistors.

[0065] In some implementation methods, please refer to Figure 3 The preamplifier circuit 121 is a single-ended amplifier circuit, and includes a third transistor 1212. The post-amplifier circuit 122 is a differential amplifier circuit, and includes a fourth transistor 1222 and a fifth transistor 1223. The fourth transistor 1222 is configured to amplify a first RF signal, and the fifth transistor 1223 is configured to amplify a second RF signal. The first RF signal and the second RF signal are a pair of differential signals. The RF front-end module 100 includes two post-amplifier power supply inductors, including post-amplifier power supply inductor L. 21 and the power supply inductor L 22 The power supply inductor L of the later stage 21 The first terminal is connected to the power supply terminal of the fourth transistor 1222, and the subsequent power supply inductor L 21 The second end is connected to the second power supply port 140, and the subsequent power supply inductor L 22 The first terminal is connected to the power supply terminal of the fifth transistor 1223, and the subsequent power supply inductor L 22 The second end is connected to the second power supply port 140. The downstream power supply inductor L... 21 The inductance value of the first stage is equal to or greater than the inductance value of the second power supply inductor L4, and the subsequent power supply inductor L... 22 The inductance value is equal to or greater than the inductance value of the second power supply inductor L4.

[0066] In this embodiment, the preamplifier circuit 121 is a single-ended amplifier circuit, which has a simple structure and few components, reducing signal amplification losses and layout complexity, and is suitable for single-ended input signal scenarios. The post-amplifier circuit 122 is a differential amplifier circuit, which can suppress common-mode interference, improve the signal-to-noise ratio of the amplified signal, reduce the impact of noise on subsequent circuits, and improve power amplification performance. Furthermore, the post-amplifier power supply inductor L... 21 and the power supply inductor L 22 Independent power supply paths are provided for the fourth transistor 1222 and the fifth transistor 1223 of the subsequent amplifier circuit 122, respectively, to avoid cross-interference between the power supply paths of the fourth transistor 1222 and the fifth transistor 1223, thus ensuring the symmetry of differential signal amplification. Meanwhile, the subsequent power supply inductor L... 21 and the power supply inductor L 22 The inductance values ​​of all inductors are not less than the second power supply inductor L4, which can be supplied through the subsequent power supply inductor L4 of the substrate 110. 21 and the power supply inductor L 22 It provides a stable power supply voltage for each corresponding transistor, and also allows the second power supply inductor L4 on the carrier board 200 to have a more balanced impact on the power supply of the two transistors when adjusted, reducing the differential signal imbalance caused by power supply fluctuations and improving the working stability of the RF front-end module 100.

[0067] In some implementation methods, please refer to Figure 4 The preamplifier circuit 121 is a differential amplifier circuit, including a sixth transistor 1213 and a seventh transistor 1214. The sixth transistor 1213 is configured to amplify the third RF signal, and the seventh transistor 1214 is configured to amplify the fourth RF signal. The third and fourth RF signals are a pair of differential signals. The postamplifier circuit 122 is a differential amplifier circuit, including an eighth transistor 1224 and a ninth transistor 1225. The eighth transistor 1224 is configured to amplify the third RF signal, and the ninth transistor 1225 is configured to amplify the fourth RF signal. The RF front-end module 100 includes two preamplifier power supply inductors and two postamplifier power supply inductors. The two preamplifier power supply inductors include preamplifier power supply inductor L. 11 and the pre-amplifier power supply inductor L 12 The two power supply inductors include power supply inductor L. 23 and the power supply inductor L 24 Pre-amplifier power supply inductor L 11 The first terminal is connected to the power supply terminal of the sixth transistor 1213, and the pre-amplifier power supply inductor L 11 The second end is connected to the first power supply port 130. The pre-amplifier power supply inductor L... 12 The first terminal is connected to the power supply terminal of the seventh transistor 1214, and the pre-amplifier power supply inductor L 12 The second end is connected to the first power supply port 130. The subsequent power supply inductor L... 23 The first terminal is connected to the power supply terminal of the eighth transistor 1224, and the subsequent power supply inductor L 23 The second end is connected to the second power supply port 140. The subsequent power supply inductor L... 24 The first terminal is connected to the power supply terminal of the ninth transistor 1225, and the subsequent power supply inductor L... 24 The second end is connected to the second power supply port 140. The pre-amplifier power supply inductor L... 11 The inductance value is equal to or greater than the inductance value of the first power supply inductor L3, and the front-end power supply inductor L... 12 The inductance value is equal to or greater than the inductance value of the first power supply inductor L3. The subsequent power supply inductor L... 23 The inductance value of the first stage is equal to or greater than the inductance value of the second power supply inductor L4, and the subsequent power supply inductor L... 24 The inductance value is equal to or greater than the inductance value of the second power supply inductor L4.

[0068] In this embodiment, both the preamplifier circuit 121 and the postamplifier circuit 122 are differential amplifier circuits, which can further enhance the suppression of common-mode interference and improve the signal-to-noise ratio and amplification purity of the RF signal. The two preamplifier power supply inductors and the two postamplifier power supply inductors provide independent power supply paths for their respective transistors, avoiding power supply cross-interference between transistors and ensuring the symmetry and consistency of differential signal amplification. Furthermore, the inductance values ​​of the two preamplifier power supply inductors are not less than the inductance value of the first power supply inductor L3, and the inductance values ​​of the two postamplifier power supply inductors are not less than the inductance value of the second power supply inductor L4. This allows for filtering and decoupling through the two preamplifier power supply inductors and the two postamplifier power supply inductors on the substrate 110, stabilizing the power supply voltage of their respective transistors. It also ensures a more balanced impact of the first power supply inductor L3 and the second power supply inductor L4 on the carrier board 200 during adjustment, reducing differential signal imbalance caused by power supply fluctuations and improving the operational stability of the RF front-end module 100.

[0069] In some implementation methods, please refer to Figure 5 The RF front-end module 100 includes a first power amplifier unit 120a, a second power amplifier unit 120b, and a third power amplifier unit 120c integrated on the same power amplifier chip 120. The first power amplifier unit 120a is configured to amplify RF signals in a first frequency band, the second power amplifier unit 120b is configured to amplify RF signals in a second frequency band, and the third power amplifier unit 120c is configured to amplify RF signals in a third frequency band. The pre-amplifier power supply inductor includes a first pre-amplifier power supply inductor L. 13 Second pre-stage power supply inductor L 14 and the third pre-stage power supply inductor L 15 The power supply inductors for the later stages include the first power supply inductor L. 25 Second power supply inductor L 26 and the third power supply inductor L 27 The power supply terminal of the preamplifier circuit 121 of the first power amplifier unit 120a is connected to the first preamplifier power supply inductor L. 13 The power supply terminal of the subsequent amplifier circuit 122 of the first power amplifier unit 120a is connected to the first subsequent power supply inductor L. 25 Connection. The power supply terminal of the preamplifier circuit 121 of the second power amplifier unit 120b is connected to the second preamplifier power supply inductor L. 14 The connection is made between the power supply terminal of the power amplifier circuit 122 of the second power amplifier unit 120b and the power supply inductor L of the second power amplifier unit 120b. 26 Connection. The power supply terminal of the preamplifier circuit 121 of the third power amplifier unit 120c is connected to the third preamplifier power supply inductor L. 15The connection is made between the power supply terminal of the power amplifier circuit 122 of the third power amplifier unit 120c and the power supply inductor L of the third power amplifier unit. 27 connect.

[0070] In this embodiment, a multi-band power amplifier unit is integrated on the same power amplifier chip 120. This not only enables simultaneous amplification of multi-band radio frequency signals but also improves the integration and reduces the size of the radio frequency front-end module 100. Furthermore, each power amplifier unit has independent pre-stage and post-stage power supply inductors. The inductance values ​​of the corresponding power supply inductors can be set according to the frequency characteristics of different frequency band signals, thereby ensuring the filtering and impedance matching effects of each power supply path. This avoids crosstalk between frequency bands caused by sharing pre-stage and / or post-stage power supply inductors, ensuring the purity of amplified signals from different frequency bands and improving the operational reliability of the radio frequency front-end module 100 in multi-band application scenarios.

[0071] As one implementation method, please refer to Figure 5 First pre-stage power supply inductor L 13 Second pre-stage power supply inductor L 14 and the third pre-stage power supply inductor L 15 Nearby setting, first stage power supply inductor L 25 Second power supply inductor L 26 and the third power supply inductor L 27 The proximity arrangement means that the pre-amplifier circuit 121 of all power amplifier units is located close to each other, and the power supply inductor of the post-amplifier circuit 122 of all power amplifier units is located close to each other. This not only eliminates feedback coupling between input and output signals, but also optimizes the layout of the substrate 110 and saves space.

[0072] As one implementation method, please refer to Figure 6The RF front-end module 100 also includes a first output matching circuit 150, a second output matching circuit 160, and a third output matching circuit 170. The first output matching circuit 150, the second output matching circuit 160, and the third output matching circuit 170 are disposed on the substrate 110. The first output matching circuit 150 is connected to the output terminal of the first power amplifier unit 120a, the second output matching circuit 160 is connected to the output terminal of the second power amplifier unit 120b, and the third output matching circuit 170 is connected to the output terminal of the third power amplifier unit 120c. Specifically, the first output matching circuit 150 is positioned near the output terminal of the first power amplifier unit 120a relative to the output terminals of the second power amplifier unit 120b and the third power amplifier unit 120c; the second output matching circuit 160 is positioned near the output terminal of the second power amplifier unit 120b relative to the output terminals of the first power amplifier unit 120a and the third power amplifier unit 120c; and the third output matching circuit 170 is positioned near the output terminal of the third power amplifier unit 120c relative to the output terminals of the first power amplifier unit 120a and the second power amplifier unit 120b.

[0073] In this embodiment, the output matching circuits are closer to the output terminals of other power amplifier units than their corresponding output terminals. This shortens the transmission path of the radio frequency signal, reduces insertion loss and parasitic parameters during signal transmission, and improves signal transmission efficiency. Furthermore, the distance between the output matching circuits and the output terminals of other power amplifier units effectively reduces electromagnetic coupling and cross-interference between amplified signals of different frequency bands, preventing crosstalk between frequency bands from affecting their respective amplification performance.

[0074] In one implementation, the first frequency band is lower than the second frequency band, and the second frequency band is lower than the third frequency band. For example, the first frequency band is a low-frequency band, the second frequency band is a mid-frequency band, and the third frequency band is a high-frequency band. The first output matching circuit 150 includes at least one inductor and at least one capacitor; the second output matching circuit 160 includes a first transformer 161, at least one inductor, and at least one capacitor; and the third output matching circuit 170 includes a second transformer 171, at least one inductor, and at least one capacitor.

[0075] In this embodiment, since low-frequency signals have lower transmission losses, basic impedance matching requirements can be met simply by combining inductors and capacitors, resulting in a simple structure and reduced space requirements. However, mid-frequency and high-frequency signals have higher requirements for bandwidth, impedance transformation ratio, and signal isolation. Transformers can perform efficient impedance matching and signal isolation, enabling flexible impedance adjustment over a wide bandwidth, and are better suited to the transmission characteristics of mid-frequency and high-frequency signals.

[0076] As an example, please refer to Figure 7 At least one inductor of the first output matching circuit 150 includes a first inductor L. 51 Second inductor L 52 and the third inductor L 53 At least one capacitor in the first output matching circuit 150 includes a first capacitor C. 11 Second capacitor C 12 and the third capacitor C 13 First capacitor C 11 The first terminal is connected to the output terminal of the first power amplifier unit 120a, and the first capacitor C 11 The second end is connected to the first inductor L 51 The first terminal, the first inductor L 51 The second terminal is configured to be grounded, and the second inductor L 52 The first terminal is connected to the first capacitor C 11 The first terminal, the second inductor L 52 The second terminal is connected to the second capacitor C. 12 The first terminal, the second capacitor C 12 The second end is connected to the signal output port 190 of the substrate, and the third capacitor C 13 The first end is connected to the second inductor L 52 The second terminal, the third capacitor C 13 The second terminal is configured to be grounded, and the third inductor L 53 The first terminal is connected to the second capacitor C 12 The second terminal, the third inductor L 53 The second terminal is configured to be grounded.

[0077] As an example, please refer to Figure 8 At least one inductor in the second output matching circuit 160 includes a fourth inductor L. 61 and the fifth inductor L 62 At least one capacitor in the second output matching circuit 160 includes a fourth capacitor C. 21 Fifth capacitor C 22 and the sixth capacitor C 23 The first transformer 161 includes a first primary winding and a second secondary winding that are coupled to each other. The fourth capacitor C 21 The first terminal is connected to the output terminal of the second power amplifier unit 120b, and the fourth capacitor C 21 The second terminal is connected to the fourth inductor L 61 The first terminal, the fourth inductor L 61 The second terminal is configured to be grounded, and the fifth capacitor C 22 The first terminal is connected to the fourth capacitor C. 21 The first terminal, the fifth capacitor C 22The second end is connected to the first end of the first primary winding, and the second end of the first primary winding is configured to be grounded. The first end of the first primary winding is connected to the fifth inductor L. 62 The first terminal, the second terminal of the primary winding is configured to be grounded, and the fifth inductor L 62 The second end is connected to the signal output port 190 of the substrate, and the sixth capacitor C 23 The first terminal is connected to the fifth inductor L 62 The second terminal, the sixth capacitor C 23 The second terminal is configured to be grounded.

[0078] As an example, please refer to Figure 9 At least one inductor in the third output matching circuit 170 includes a sixth inductor L. 71 and the seventh inductor L 72 At least one capacitor in the third output matching circuit 170 includes a seventh capacitor C. 31 Eighth capacitor C 32 and the ninth capacitor C 33 The second transformer 171 includes a second primary winding and a second secondary winding that are coupled together. The seventh capacitor C... 31 The first terminal is connected to the output terminal of the third power amplifier unit 120c, and the seventh capacitor C 31 The second terminal is connected to the sixth inductor L 71 The first terminal, the sixth inductor L 71 The second terminal is configured to be grounded, and the eighth capacitor C 32 The first terminal is connected to the seventh capacitor C. 31 The first terminal, the eighth capacitor C 32 The second terminal is connected to the first terminal of the second primary winding, the second terminal of the second primary winding is configured to be grounded, and the first terminal of the second primary winding is connected to the seventh inductor L. 72 The first terminal, the second terminal of the second winding is configured to be grounded, and the seventh inductor L 72 The second end is connected to the signal output port 190 of the substrate, and the ninth capacitor C 33 The first terminal is connected to the seventh inductor L 72 The second terminal, the ninth capacitor C 33 The second terminal is configured to be grounded.

[0079] In some implementation methods, please refer to Figure 10The RF front-end module 100 also includes a substrate signal input port 180 and a substrate signal output port 190, which are disposed on the substrate 110. The power amplifier chip 120 also includes a chip signal input port 123 and a chip signal output port 124. The substrate signal input port 180 is connected to the chip signal input port 123, the chip signal input port 123 is connected to the input terminal of the preamplifier circuit 121, the output terminal of the postamplifier circuit 122 is connected to the chip signal output port 124, and the chip signal output port 124 is connected to the substrate signal output port 190. The preamplifier power supply inductor L1 is positioned closer to the substrate signal input port 180 and the chip signal input port 123 than the substrate signal input port 190 and the chip signal output port 124, and the postamplifier power supply inductor L2 is positioned closer to the substrate signal input port 190 and the chip signal output port 124 than the substrate signal input port 180 and the chip signal input port 123. In other words, the front-stage power supply inductor L1 is close to the signal input terminal and far from the signal output terminal, while the rear-stage power supply inductor L2 is close to the signal output terminal and far from the signal input terminal, thereby effectively avoiding the coupling between the input and output signals.

[0080] Please refer to Figure 11 Embodiment 2 of this application provides an RF front-end module 300, including a substrate 310, a power amplifier chip 320, a first power supply port 330, a second power supply port 340, and a front-end power supply inductor L. 81 and the power supply inductor L 82 Power amplifier chip 320, first power supply port 330, second power supply port 340, pre-amplifier power supply inductor L 81 and the power supply inductor L 82 The power amplifier chip 320, disposed on substrate 310, includes a preamplifier circuit 321 and a power amplifier circuit 322. The input terminal of the power amplifier circuit 322 is connected to the output terminal of the preamplifier circuit 321. The preamplifier power supply inductor L... 81 The first terminal is connected to the power supply terminal of the preamplifier circuit 321, and the preamplifier power supply inductor L 81 The second end is connected to the first power supply port 330, and the subsequent power supply inductor L 82 The first terminal is connected to the power supply terminal of the subsequent amplifier circuit 322, and the power supply inductor L of the subsequent stage... 82The second end is connected to the second power supply port 340. The first power supply port 330 is a battery power supply port (Vbatt port), and the second power supply port 340 is a power supply port (VCC port). When the power amplifier chip 320 is configured in the first power mode, the voltage of the power supply port is V1. When the power amplifier chip 320 is configured in the second power mode, the voltage of the power supply port is V2. When the power amplifier chip 320 is configured in the first power mode, the voltage of the battery power supply port is V3. When the power amplifier chip 320 is configured in the second power mode, the voltage of the battery power supply port is V4. The maximum output power of the power amplifier chip 320 in the first power mode is greater than the maximum output power of the power amplifier chip 320 in the second power mode, V1 is greater than V2, and V3 is equal to V4.

[0081] In this embodiment, the power supply terminals of the preamplifier circuit 321 and the power amplifier circuit 322 of the power amplifier chip 320 are respectively connected to the preamplifier power supply inductor L. 81 Power supply inductor L 82 The front-end power supply inductor L is connected to the first power supply port 330 and the second power supply port 340 on the substrate 310. 81 Power supply inductor L 82 It can independently provide stable power supply voltages for the preamplifier circuit 321 and the power amplifier circuit 322, which can effectively avoid the preamplifier power supply inductor L 81 and the power supply inductor L 82 A loop is formed to ensure the stability of the power supply voltage and reduce harmonic interference. Furthermore, since the power supply voltage output from the battery power supply port is usually related to the control voltage of other chips (e.g., control chips) in the RF front-end module 300, it is not easily changed. The power amplifier chip 320 often requires a wide adjustable power supply voltage range to adapt to different operating modes. Therefore, the RF front-end module 300 provided in this embodiment can also adjust the voltage of the power supply port according to the power mode of the power amplifier chip 320 without changing the voltage of the battery power supply port. A higher power supply port voltage is used in the first power mode with higher maximum output power, and a lower power supply port voltage is used in the second power mode with lower maximum output power. This not only meets the power supply requirements of different power modes but also ensures that other performance characteristics of the RF front-end module 300 are not affected, further improving the operational stability of the RF front-end module 300.

[0082] In some embodiments, the RF front-end module 300 further includes a control chip disposed on the substrate 310, wherein the voltage of the battery power supply port is correlated with the control voltage output by the control chip. For example, the correlation can be that the voltage of the battery power supply port is the same as the control voltage output by the control chip, or that the voltage of the battery power supply port changes with the control voltage output by the control chip. For instance, the voltage of the battery power supply port may change positively correlated with the control voltage output by the control chip, or change proportionally, etc.

[0083] In some implementation methods, please refer to Figure 12 The substrate 310 is disposed on the carrier plate 400. The first power supply port 330 is used to connect the first power supply inductor L. 83 First power supply inductor L 83 The front-end power supply inductor L is mounted on the support plate 400. 81 The inductance value is greater than that of the first power supply inductor L. 83 The inductance value. The second power supply port 340 is used to connect the second power supply inductor L. 84 Second power supply inductor L 84 The power supply inductor L is mounted on the support plate 400. 82 The inductance value is greater than that of the second power supply inductor L. 84 The inductance value.

[0084] In this embodiment, the front-end power supply inductor L located on the substrate 310 81 The inductance value is greater than that of the first power supply inductor L located on the carrier plate 400. 83 The inductance value is located on the substrate 310, where the power supply inductor L is located. 82 The inductance value is greater than that of the second power supply inductor L located on the carrier plate 400. 84 The inductance value can be adjusted not only according to the actual situation, but also the first power supply inductor L. 83 Second power supply inductor L 84 The inductance value is adjusted to avoid voltage fluctuations caused by impedance mismatch, and it can also reduce the first power supply inductor L outside the RF front-end module 300. 83 Second power supply inductor L 84 The impact of adjusting the inductance value on the performance of the RF front-end module 300 is investigated to avoid large fluctuations in the performance of the RF front-end module 300 and improve its stability.

[0085] Please refer to Figure 13 Embodiment 3 of this application provides an electronic device 1000, including a carrier board 500 and a first power supply inductor L. 91 Second power supply inductor L 92 And RF front-end module 600, first power supply inductor L 91 Second power supply inductor L92 The RF front-end module 600 is mounted on the carrier plate 500. The RF front-end module 600 includes a substrate 610, a power amplifier chip 620, a first power supply port 630, a second power supply port 640, and a third power supply inductor L. 93 and the fourth power supply inductor L 94 The substrate 610 is disposed on the carrier plate 500, and includes a power amplifier chip 620, a first power supply port 630, a second power supply port 640, and a third power supply inductor L. 93 and the fourth power supply inductor L 94 The power amplifier chip 620 is disposed on substrate 610. It includes a pre-amplifier circuit 621 and a post-amplifier circuit 622, with the input terminal of the post-amplifier circuit 622 connected to the output terminal of the pre-amplifier circuit 621. A third power supply inductor L... 93 The first terminal is connected to the power supply terminal of the preamplifier circuit 621, and the third power supply inductor L... 93 The second end is connected to the first power supply port 630, and the first power supply port 630 is connected to the first power supply inductor L. 91 The first terminal is connected to the first power supply inductor L. 91 The second terminal is configured to connect to the first power supply. The fourth power supply inductor L 94 The first terminal is connected to the power supply terminal of the subsequent amplifier circuit 622, and the fourth power supply inductor L 94 The second end is connected to the second power supply port 640, and the second power supply port 640 is connected to the second power supply inductor L. 92 The first end is connected to the second power supply inductor L. 92 The second terminal is configured to connect to the second power supply. The third power supply inductor L... 93 The inductance value is greater than that of the first power supply inductor L. 91 The inductance value, the fourth power supply inductor L 94 The inductance value is greater than that of the second power supply inductor L. 92 The inductance value. As an example, the first power supply can be the original input power supply (such as a battery or external adapter), and the second power supply can be a regulated power supply converted by a power management integrated circuit (PMIC).

[0086] In this embodiment, the power supply terminals of the preamplifier circuit 621 and the power amplifier circuit 622 of the power amplifier chip 620 are respectively connected to the third power supply inductor L. 93 Fourth power supply inductor L 94 The third power supply inductor L is correspondingly connected to the first power supply port 630, the second power supply port 640, and the third power supply inductor L on the substrate 610. 93 Fourth power supply inductor L 94It can independently provide stable power supply voltages for the preamplifier circuit 621 and the power amplifier circuit 622, effectively avoiding the need for a third power supply inductor L. 93 and the fourth power supply inductor L 94 This forms a loop, ensuring the stability of the power supply voltage and reducing harmonic interference. Furthermore, the third power supply inductor L is located on the substrate 610. 93 The inductance value is greater than that of the first power supply inductor L located on the carrier plate 500. 91 The inductance value is located on the fourth power supply inductor L on the substrate 610. 94 The inductance value is greater than that of the second power supply inductor L located on the carrier plate 500. 92 The inductance value not only facilitates adjustment of the first power supply inductor L according to actual conditions, but also... 91 Second power supply inductor L 92 The inductance value is adjusted to allow for flexible impedance adjustment, and the first power supply inductance L outside the substrate 610 can be reduced. 91 Second power supply inductor L 92 The impact of adjusting the inductance value on the performance of the RF front-end module 600 is investigated to avoid large fluctuations in the overall performance of the RF front-end module 600, thereby improving the stability of the RF front-end module 600.

[0087] As an example, the carrier board 500 can be a circuit board such as a PCB (Printed Circuit Board), or a test board, etc. The electronic device 1000 can be a mobile terminal, a watch, or a test instrument, etc.

[0088] In some implementation methods, please refer to Figure 14 The electronic device 1000 also includes a first decoupling capacitor C. 41 Second decoupling capacitor C 42 The first decoupling capacitor C 41 Second decoupling capacitor C 42 The first decoupling capacitor C is mounted on the carrier plate 500. 41 The first terminal is connected to the first power supply inductor L 91 The second terminal, the first decoupling capacitor C 41 The second terminal is configured to be grounded, and the second decoupling capacitor C 42 The first terminal is connected to the second power supply inductor L 92 The second terminal, the second decoupling capacitor C 42 The second terminal is configured to be grounded.

[0089] In this embodiment, the first decoupling capacitor C 41 and the first power supply inductor L 91 This is combined to form a filter circuit and a second decoupling capacitor C. 42 Second power supply inductor L 92Together, they form a filter circuit that effectively filters out harmonics in the power supply path, reducing the impact of power supply fluctuations on the power amplifier chip 620. Furthermore, the first decoupling capacitor C... 41 Second decoupling capacitor C 42 Located on the carrier board 500, it shortens the path of the filter circuit and improves the filtering efficiency.

[0090] The above description is merely an embodiment of this application. It should be noted that those skilled in the art can make improvements without departing from the inventive concept of this application, but these improvements all fall within the protection scope of this application.

Claims

1. A radio frequency front-end module, characterized in that, For mounting on the support plate, including: substrate; A power amplifier chip is disposed on the substrate and includes a preamplifier circuit and a postamplifier circuit, wherein the input terminal of the postamplifier circuit is connected to the output terminal of the preamplifier circuit. A first power supply port and a second power supply port are disposed on the substrate; and A pre-amplifier power supply inductor and a post-amplifier power supply inductor are disposed on the substrate. The first end of the pre-amplifier power supply inductor is connected to the power supply terminal of the pre-amplifier circuit, and the second end of the pre-amplifier power supply inductor is connected to the first power supply port. The first power supply port is used to connect to a first power supply inductor disposed on the carrier plate. The first end of the post-amplifier power supply inductor is connected to the power supply terminal of the post-amplifier circuit, and the second end of the post-amplifier power supply inductor is connected to the second power supply port. The second power supply port is used to connect to a second power supply inductor disposed on the carrier plate. The inductance value of the pre-amplifier power supply inductor is greater than the inductance value of the first power supply inductor, and the inductance value of the post-amplifier power supply inductor is greater than the inductance value of the second power supply inductor.

2. The radio frequency front-end module as described in claim 1, characterized in that, The inductance value of the preceding power supply inductor is equal to or greater than twice the inductance value of the first power supply inductor; The inductance value of the subsequent power supply inductor is equal to or greater than twice the inductance value of the second power supply inductor.

3. The radio frequency front-end module as described in claim 1, characterized in that, The first power supply port is a battery power supply port, and the second power supply port is a power supply port.

4. The radio frequency front-end module as described in claim 3, characterized in that, When the power amplifier chip is configured in a first power mode, the voltage of the power supply port is V1; when the power amplifier chip is configured in a second power mode, the voltage of the power supply port is V2. When the power amplifier chip is configured in a first power mode, the voltage of the battery power supply port is V3; when the power amplifier chip is configured in a second power mode, the voltage of the battery power supply port is V4. Wherein, the maximum output power of the power amplifier chip in the first power mode is greater than the maximum output power of the power amplifier chip in the second power mode, V1 is greater than V2, and V3 is equal to V4.

5. The radio frequency front-end module as described in claim 1, characterized in that, The inductance value of the pre-stage power supply inductor is in the range of [0.5nH, 3nH]; The inductance value of the subsequent power supply inductor is in the range of [0.5nH, 3nH].

6. The radio frequency front-end module as described in claim 1, characterized in that, The preamplifier circuit is a single-ended amplifier circuit, and the preamplifier circuit includes a first transistor. The postamplifier circuit is a single-ended amplifier circuit, and the postamplifier circuit includes a second transistor. The output terminal of the first transistor is connected to the input terminal of the second transistor. The first transistor and the second transistor are bipolar transistors, with the first terminal of the front-stage power supply inductor connected to the collector of the first transistor and the first terminal of the rear-stage power supply inductor connected to the collector of the second transistor; or, the first transistor and the second transistor are field-effect transistors, with the first terminal of the front-stage power supply inductor connected to the source of the first transistor and the first terminal of the rear-stage power supply inductor connected to the source of the second transistor.

7. The radio frequency front-end module as described in claim 1, characterized in that, The preamplifier circuit is a single-ended amplifier circuit, and the preamplifier circuit includes a third transistor; The subsequent amplifier circuit is a differential amplifier circuit, which includes a fourth transistor and a fifth transistor. The fourth transistor is configured to amplify a first radio frequency signal, and the fifth transistor is configured to amplify a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of differential signals. The RF front-end module includes two power supply inductors. One power supply inductor has its first end connected to the power supply terminal of the fourth transistor and its second end connected to the second power supply port. The other power supply inductor has its first end connected to the power supply terminal of the fifth transistor and its second end connected to the second power supply port. The inductance values ​​of the two power supply inductors are equal to or greater than the inductance value of the second power supply inductor.

8. The radio frequency front-end module as described in claim 1, characterized in that, The preamplifier circuit is a differential amplifier circuit, which includes a sixth transistor and a seventh transistor. The sixth transistor is configured to amplify a third radio frequency signal, and the seventh transistor is configured to amplify a fourth radio frequency signal. The third radio frequency signal and the fourth radio frequency signal are a pair of differential signals. The subsequent amplifier circuit is a differential amplifier circuit, which includes an eighth transistor and a ninth transistor. The eighth transistor is configured to amplify the third radio frequency signal, and the ninth transistor is configured to amplify the fourth radio frequency signal. The RF front-end module includes two front-end power supply inductors and two rear-end power supply inductors; one of the front-end power supply inductors has a first end connected to the power supply terminal of the sixth transistor and a second end connected to the first power supply port, and the other front-end power supply inductor has a first end connected to the power supply terminal of the seventh transistor and a second end connected to the first power supply port; one of the rear-end power supply inductors has a first end connected to the power supply terminal of the eighth transistor and a second end connected to the second power supply port, and the other rear-end power supply inductor has a first end connected to the power supply terminal of the ninth transistor and a second end connected to the second power supply port; The inductance values ​​of the two preceding power supply inductors are each equal to or greater than the inductance value of the first power supply inductor; The inductance values ​​of the two subsequent power supply inductors are both equal to or greater than the inductance value of the second power supply inductor.

9. The radio frequency front-end module as described in claim 1, characterized in that, The radio frequency front-end module includes a first power amplification unit, a second power amplification unit, and a third power amplification unit integrated on the same power amplification chip; the first power amplification unit is configured to amplify radio frequency signals in a first frequency band, the second power amplification unit is configured to amplify radio frequency signals in a second frequency band, and the third power amplification unit is configured to amplify radio frequency signals in a third frequency band. The front-stage power supply inductor includes a first front-stage power supply inductor, a second front-stage power supply inductor, and a third front-stage power supply inductor; the rear-stage power supply inductor includes a first rear-stage power supply inductor, a second rear-stage power supply inductor, and a third rear-stage power supply inductor. The power supply terminal of the preamplifier circuit of the first power amplifier unit is connected to the first preamplifier power supply inductor, and the power supply terminal of the postamplifier circuit of the first power amplifier unit is connected to the first postamplifier power supply inductor. The power supply terminal of the preamplifier circuit of the second power amplifier unit is connected to the second preamplifier power supply inductor, and the power supply terminal of the postamplifier circuit of the second power amplifier unit is connected to the second postamplifier power supply inductor. The power supply terminal of the preamplifier circuit of the third power amplifier unit is connected to the third preamplifier power supply inductor, and the power supply terminal of the postamplifier circuit of the third power amplifier unit is connected to the third postamplifier power supply inductor.

10. The radio frequency front-end module as described in claim 9, characterized in that, The first, second, and third pre-stage power supply inductors are arranged close to each other, as are the first, second, and third post-stage power supply inductors.

11. The radio frequency front-end module as described in claim 9, characterized in that, The radio frequency front-end module further includes a first output matching circuit, a second output matching circuit, and a third output matching circuit disposed on the substrate. The first output matching circuit is connected to the output terminal of the first power amplifier unit, the second output matching circuit is connected to the output terminal of the second power amplifier unit, and the third output matching circuit is connected to the output terminal of the third power amplifier unit. The first output matching circuit is positioned closer to the output terminal of the first power amplifier unit than the output terminals of the second and third power amplifier units. The second output matching circuit is positioned closer to the output terminal of the second power amplifier unit than the output terminals of the first power amplifier unit and the third power amplifier unit; The third output matching circuit is positioned closer to the output terminal of the third power amplifier unit than the output terminal of the first power amplifier unit and the output terminal of the second power amplifier unit.

12. The radio frequency front-end module as described in claim 9, characterized in that, The first frequency band is less than the second frequency band, and the second frequency band is less than the third frequency band; wherein, the first output matching circuit includes at least one inductor and at least one capacitor, the second output matching circuit includes a first transformer, at least one inductor and at least one capacitor, and the third output matching circuit includes a second transformer, at least one inductor and at least one capacitor.

13. The radio frequency front-end module as described in claim 12, characterized in that, The first output matching circuit includes at least one inductor, a second inductor, and a third inductor, and the first output matching circuit includes at least one capacitor, a first capacitor, and a third capacitor. The first terminal of the first capacitor is connected to the output terminal of the first power amplifier unit. The second terminal of the first capacitor is connected to the first terminal of the first inductor. The second terminal of the first inductor is configured to be grounded. The first terminal of the second inductor is connected to the first terminal of the first capacitor. The second terminal of the second inductor is connected to the first terminal of the second capacitor. The second terminal of the second capacitor is connected to the signal output port of the substrate. The first terminal of the third capacitor is connected to the second terminal of the second inductor. The second terminal of the third capacitor is configured to be grounded. The first terminal of the third inductor is connected to the second terminal of the second capacitor. The second terminal of the third inductor is configured to be grounded.

14. The radio frequency front-end module as described in claim 12, characterized in that, The second output matching circuit includes at least one inductor, including a fourth inductor and a fifth inductor; the second output matching circuit includes at least one capacitor, including a fourth capacitor, a fifth capacitor, and a sixth capacitor; and the first transformer includes a first primary winding and a first secondary winding coupled to each other. The first terminal of the fourth capacitor is connected to the output terminal of the second power amplifier unit. The second terminal of the fourth capacitor is connected to the first terminal of the fourth inductor, and the second terminal of the fourth inductor is grounded. The first terminal of the fifth capacitor is connected to the first terminal of the fourth capacitor. The second terminal of the fifth capacitor is connected to the first terminal of the first primary winding, and the second terminal of the first primary winding is grounded. The first terminal of the first primary winding is connected to the first terminal of the fifth inductor, and the second terminal of the first primary winding is grounded. The second terminal of the fifth inductor is connected to the signal output port of the substrate. The first terminal of the sixth capacitor is connected to the second terminal of the fifth inductor, and the second terminal of the sixth capacitor is grounded.

15. The radio frequency front-end module as described in claim 12, characterized in that, The third output matching circuit includes at least one inductor, including a sixth inductor and a seventh inductor; the third output matching circuit includes at least one capacitor, including a seventh capacitor, an eighth capacitor, and a ninth capacitor; and the second transformer includes a second primary winding and a second secondary winding that are coupled to each other. The first terminal of the seventh capacitor is connected to the output terminal of the third power amplifier unit. The second terminal of the seventh capacitor is connected to the first terminal of the sixth inductor, and the second terminal of the sixth inductor is grounded. The first terminal of the eighth capacitor is connected to the first terminal of the seventh capacitor. The second terminal of the eighth capacitor is connected to the first terminal of the second primary winding, and the second terminal of the second primary winding is grounded. The first terminal of the second secondary winding is connected to the first terminal of the seventh inductor, and the second terminal of the second secondary winding is grounded. The second terminal of the seventh inductor is connected to the signal output port of the substrate. The first terminal of the ninth capacitor is connected to the second terminal of the seventh inductor, and the second terminal of the ninth capacitor is grounded.

16. The radio frequency front-end module as described in claim 1, characterized in that, The radio frequency front-end module further includes a substrate signal input port and a substrate signal output port disposed on the substrate. The power amplifier chip further includes a chip signal input port and a chip signal output port. The substrate signal input port is connected to the chip signal input port. The chip signal input port is connected to the input terminal of the preamplifier circuit. The output terminal of the postamplifier circuit is connected to the chip signal output port. The chip signal output port is connected to the substrate signal output port. The pre-stage power supply inductor is positioned closer to the substrate signal input port and the chip signal input port than the substrate signal output port and the chip signal output port; The power supply inductor is positioned closer to the signal output port of the substrate and the signal output port of the chip than the signal input port of the substrate and the signal input port of the chip.

17. A radio frequency front-end module, characterized in that, include: substrate; A power amplifier chip is disposed on the substrate and includes a preamplifier circuit and a postamplifier circuit, wherein the input terminal of the postamplifier circuit is connected to the output terminal of the preamplifier circuit. A first power supply port and a second power supply port are disposed on the substrate; and A pre-amplifier power supply inductor and a post-amplifier power supply inductor are disposed on the substrate. The first end of the pre-amplifier power supply inductor is connected to the power supply terminal of the pre-amplifier circuit, and the second end of the pre-amplifier power supply inductor is connected to the first power supply port. The first end of the post-amplifier power supply inductor is connected to the power supply terminal of the post-amplifier circuit, and the second end of the post-amplifier power supply inductor is connected to the second power supply port. The first power supply port is a battery power supply port, and the second power supply port is a power supply port. When the power amplifier chip is configured in a first power mode, the voltage of the power supply port is V1; when the power amplifier chip is configured in a second power mode, the voltage of the power supply port is V2. When the power amplifier chip is configured in a first power mode, the voltage of the battery power supply port is V3; when the power amplifier chip is configured in a second power mode, the voltage of the battery power supply port is V4. Wherein, the maximum output power of the power amplifier chip in the first power mode is greater than the maximum output power of the power amplifier chip in the second power mode, V1 is greater than V2, and V3 is equal to V4.

18. The radio frequency front-end module as described in claim 17, characterized in that, The radio frequency front-end module also includes a control chip disposed on the substrate, and the voltage of the battery power supply port is associated with the control voltage output by the control chip.

19. The radio frequency front-end module as described in claim 17, characterized in that, The substrate is disposed on the carrier plate; The first power supply port is used to connect to the first power supply inductor disposed on the carrier plate, and the inductance value of the front-stage power supply inductor is greater than the inductance value of the first power supply inductor; The second power supply port is used to connect to the second power supply inductor disposed on the carrier plate, and the inductance value of the subsequent power supply inductor is greater than the inductance value of the second power supply inductor.

20. An electronic device, characterized in that, include: Support plate; The first power supply inductor and the second power supply inductor are disposed on the carrier plate; and An RF front-end module includes a substrate disposed on a carrier board, and a power amplifier chip, a first power supply port, a second power supply port, a third power supply inductor, and a fourth power supply inductor disposed on the substrate. The power amplifier chip includes a pre-amplifier circuit and a post-amplifier circuit. The input terminal of the post-amplifier circuit is connected to the output terminal of the pre-amplifier circuit. The first terminal of the third power supply inductor is connected to the power supply terminal of the pre-amplifier circuit, and the second terminal of the third power supply inductor is connected to the first power supply port. The first power supply port is connected to the first power supply inductor. The first terminal of the fourth power supply inductor is connected to the power supply terminal of the post-amplifier circuit, and the second terminal of the fourth power supply inductor is connected to the second power supply port. The second power supply port is connected to the second power supply inductor. The inductance value of the third power supply inductor is greater than the inductance value of the first power supply inductor, and the inductance value of the fourth power supply inductor is greater than the inductance value of the second power supply inductor.

21. The electronic device as claimed in claim 20, characterized in that, The electronic device also includes: A first decoupling capacitor is disposed on the carrier plate, a first terminal of the first decoupling capacitor is connected to a second terminal of the first power supply inductor, and the second terminal of the first decoupling capacitor is configured to be grounded; and A second decoupling capacitor is disposed on the carrier plate. The first end of the second decoupling capacitor is connected to the second end of the second power supply inductor, and the second end of the second decoupling capacitor is configured to be grounded.

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