Heating device and preparation method of perovskite cell

Abstract

The invention relates to the technical field of photovoltaics and semiconductors, and provides a heating device and a preparation method of a perovskite cell, and the heating device comprises a housing which is provided with a heating cavity; the heating piece is arranged in the heating cavity; and the bearing table is provided with a placing position for placing the substrate, the placing position is located in the heating cavity, the heating piece and the placing position are oppositely arranged, and the heating piece and the bearing table can move relatively so as to adjust the distance between the placing position and the heating piece. By applying the technical scheme of the invention, the problem that the annealing device of the perovskite battery in the related technology cannot meet the use requirement can be solved.

Description

Technical Field

[0001] This invention relates to the fields of photovoltaic and semiconductor technology, specifically to a heating device and a method for preparing perovskite solar cells. Background Technology

[0002] Solar energy is a clean energy source and a major direction for future energy development. A photovoltaic cell is a semiconductor device that can convert solar energy into electrical energy. It works based on the photoelectric effect, that is, when light shines on a semiconductor material, the energy of the photons excites electrons to jump from the valence band to the inverted band, thereby generating automatic electrons and holes, which form an electric current under the action of an endogenous electric field.

[0003] Among related technologies, perovskite solar cells have become a major research direction due to their significantly higher photoelectric conversion efficiency compared to existing crystalline silicon solar cells, and their lower cost. Currently, the perovskite thin film layer in perovskite solar cells is mainly prepared using a wet process. The prepared precursor solution is spin-coated onto a substrate, and rapid spinning ensures uniform solution distribution. The solution is then dried to evaporate, and finally, perovskite crystals are grown through heating and annealing. The heating and annealing of the perovskite thin film layer mainly includes two methods: contact heating and non-contact radiation heating.

[0004] However, contact annealing is only suitable for the preparation of small parts. For large-area products, the uniformity of heating during contact annealing is poor. Radiation annealing generally uses a tunnel furnace or multiple heating cabinets in combination. However, tunnel furnaces have the limitation of large equipment length, and multiple heating cabinets require a large number of devices. Summary of the Invention

[0005] In view of this, the present invention aims to provide a heating device and a method for preparing a perovskite battery, so as to solve the problem that the annealing device of the perovskite battery in the related art cannot meet the usage requirements.

[0006] The present invention provides a heating device, comprising: a housing having a heating cavity; a heating element disposed within the heating cavity; and a support platform having a placement position for placing a substrate, the placement position being located within the heating cavity, the heating element and the placement position being disposed opposite to each other, and the heating element and the support platform being movable relative to each other to adjust the distance between the placement position and the heating element.

[0007] In one embodiment, the heating element is disposed at the top of the heating chamber, the placement position is disposed at the bottom of the heating chamber, and the support platform is capable of moving relative to the heating element in a vertical direction.

[0008] In one embodiment, the support platform includes a column and a support plate, with the placement position disposed on the surface of the support plate, the column disposed on the side of the support plate away from the heating element, and the column being retractable.

[0009] In one embodiment, the heating device further includes a control element, the column includes a column body and a push rod passing through the column body, the push rod is connected to a support plate, and the control element is driven to the column body to move the push rod relative to the column body.

[0010] In one embodiment, the column includes an electric cylinder, a hydraulic cylinder, or a pneumatic cylinder; and / or, the heating element includes an infrared heating element.

[0011] In another aspect, the present invention provides a method for fabricating a perovskite solar cell. The perovskite solar cell is fabricated using a heating device, which includes a housing, a heating element, and a support platform. The housing has a heating cavity, and the support platform has a placement position for placing a substrate. The heating element and the placement position are arranged opposite to each other and are movable relative to each other. The method includes: acquiring a substrate; fabricating a perovskite thin film on the substrate to obtain an intermediate unit; adjusting the distance between the heating element and the placement position to a first preset distance; activating the heating element to raise the temperature at the placement position to the first preset temperature; placing the intermediate unit at the placement position; reducing the distance between the heating element and the placement position to raise the temperature at the placement position; and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance.

[0012] In one embodiment, the step of reducing the distance between the heating element and the placement position to raise the temperature at the placement position, and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance includes: holding the intermediate unit at the placement position for a first preset time; decreasing the distance between the heating element and the placement position sequentially in a preset order, and holding the intermediate unit at the placement position for different second preset times depending on the different distances between the heating element and the placement position; holding the intermediate unit at the placement position for a third preset time when the distance between the heating element and the placement position reaches the second preset distance; and removing the intermediate unit from the placement position.

[0013] In one embodiment, the step of reducing the distance between the heating element and the placement position to raise the temperature at the placement position, and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance includes: reducing the distance between the heating element and the placement position at a preset speed within a fourth preset time; and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches the second preset distance.

[0014] In one embodiment, the step of preparing a perovskite thin film on a substrate to obtain an intermediate unit includes: sequentially preparing a bottom electrode, an electron transport layer, and a perovskite light-absorbing layer on the substrate.

[0015] In one embodiment, after the step of removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance, the method further includes: sequentially preparing a hole transport layer and a metal electrode on the perovskite thin film; preparing an encapsulation layer on the substrate and the metal electrode, and covering the encapsulation layer on the side away from the substrate; and curing the encapsulation layer to obtain a perovskite battery.

[0016] The heating device using the technical solution of this invention includes a housing, a heating element, and a support platform. Since the placement position and the heating element are arranged relative to each other, the relative position of the heating element and the placement position can be adjusted by moving the heating element and the support platform relative to each other, thereby adjusting the distance between the placement position and the heating element. After adjusting the placement position and the heating element to a suitable distance, the heating element is activated to create a high-temperature environment inside the heating chamber. A substrate with a perovskite thin film is placed at the placement position on the substrate. By continuously decreasing the distance between the placement position and the heating element, the temperature at the placement position can be continuously increased, achieving a gradual heating of the perovskite thin film at the placement position, thereby achieving the crystallization of the perovskite thin film. Compared to heating methods in related technologies, because the distance between the heating element and the support platform can be adjusted, even large-area perovskite battery products can be prepared, and temperature uniformity can be maintained during the annealing heating process. Moreover, the crystallization of the perovskite thin film can be achieved using only this heating device, eliminating the need for a long tunnel furnace or multiple heating cabinets, reducing the size of the device and the space required for the production plant. Attached Figure Description

[0017] Figure 1 The diagram shown is a schematic diagram of the heating device provided in an embodiment of the present invention.

[0018] Figure 2 The diagram shown is a structural schematic of a heating device provided in an embodiment of the present invention.

[0019] Figure 3 The diagram shown is a structural schematic of a heating device provided in another embodiment of the present invention.

[0020] Figure 4 The diagram shown is a schematic diagram of the perovskite thin film preparation on a substrate in a method for preparing a perovskite battery according to an embodiment of the present invention.

[0021] Figure 5 The diagram shows a hole transport layer and a metal electrode fabricated on a substrate in a method for fabricating a perovskite solar cell according to an embodiment of the present invention.

[0022] Figure 6 The diagram shows a perovskite battery fabrication method according to an embodiment of the present invention, in which an encapsulation layer is prepared on a substrate and a cover plate is applied.

[0023] Figure 7The diagram shows the steps of a method for preparing a perovskite solar cell according to an embodiment of the present invention.

[0024] Figure 8 The diagram shows some steps of the preparation method of the perovskite battery provided in Embodiment 2 of the present invention.

[0025] Figure 9 The diagram shows some steps of the preparation method of the perovskite battery provided in Embodiment 3 of the present invention. Detailed Implementation

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] In related technologies, to achieve large-area industrial-scale fabrication of perovskite solar cells, radiation heating annealing is generally used for perovskite crystallization. Heat is transferred from the high-temperature components of the heating device to the perovskite film via electromagnetic radiation, thereby removing solvents and promoting crystal growth. Currently, tunnel furnaces or multiple drawer-type heating cabinets are mainly used. Tunnel furnaces, due to their large length, require significant production space and have high energy consumption. The method using multiple drawer-type heating cabinets requires a large number of devices, and the number of auxiliary equipment such as pick-up and conveyor systems for transferring data between different devices also increases, leading to higher production costs.

[0028] like Figure 1 As shown, Embodiment 1 of the present invention provides a heating device, which includes a housing 10, a heating element 20, and a support platform 30. The housing 10 has a heating cavity 11, and the heating element 20 is disposed within the heating cavity 11. The support platform 30 has a placement position 31 for placing a substrate 41, which is located within the heating cavity 11. The heating element 20 and the placement position 31 are disposed opposite to each other, and the heating element 20 and the support platform 30 are movable relative to each other to adjust the distance between the placement position 31 and the heating element 20.

[0029] According to the technical solution of this invention, the heating device includes a housing 10, a heating element 20, and a support platform 30. Since the placement position 31 and the heating element 20 are arranged opposite each other, the relative position of the heating element 20 and the placement position 31 can be adjusted by moving the heating element 20 and the support platform 30 relative to each other, thereby adjusting the distance between the placement position 31 and the heating element 20. After adjusting the placement position 31 and the heating element 20 to a suitable distance, the heating element 20 is activated to create a high-temperature environment inside the heating chamber 11. The substrate 41 on which the perovskite thin film is prepared is placed at the placement position 31 of the substrate 41. By continuously reducing the distance between the placement position 31 and the heating element 20, the temperature at the placement position 31 can be continuously increased, achieving a gradual increase in the temperature of the perovskite thin film at the placement position 31, thereby achieving the crystallization of the perovskite thin film. Compared with the heating method in related technologies, since the distance between the heating element 20 and the support platform 30 can be adjusted, even large-area perovskite battery products can be prepared, and the temperature uniformity during the annealing heating process can be maintained. Moreover, the crystallization of perovskite thin films can be achieved using only this heating device, without the need for a long tunnel furnace or multiple heating cabinets, thus reducing the size of the device and the space required for the production plant.

[0030] In perovskite solar cells, a step-by-step annealing process is primarily employed. This process allows for more precise control over the nucleation and crystallization of perovskite. Typically, step-by-step annealing involves multiple stages. The initial annealing stage is performed at a lower temperature. By annealing the perovskite film at a lower temperature, most of the solvent in the precursor solution is slowly removed, reducing perovskite defects caused by rapid solvent evaporation and providing suitable conditions for nucleation, resulting in a large number of uniform crystal nuclei. Subsequent annealing stages are performed at higher temperatures, utilizing the high-temperature environment to promote crystal growth, resulting in more complete and ordered crystal growth. This step-by-step heating and annealing method helps avoid defects caused by excessively rapid crystal growth, reduces thermal stress during subsequent annealing processes, and slows down the crystallization process by appropriately reducing the crystallization driving force during annealing. This increases the grain size, crystallinity, and density of the PVK film while reducing roughness.

[0031] In some embodiments, by changing the distance between the heating element 20 and the placement position 31, the heat radiated by the heating element 20 to the substrate 41 can be changed, thereby adjusting the temperature of the substrate 41. In other embodiments, the output power of the heating element 20 can be changed to change the heat output by the heating element 20, thereby changing the heat radiated to the substrate 41 and adjusting the temperature of the substrate 41. In other embodiments, the temperature of the substrate 41 can be adjusted by changing the distance between the heating element 20 and the placement position 31 in conjunction with adjusting the output power of the heating element 20. Any step-by-step annealing process for heating and annealing the perovskite can be implemented.

[0032] It should be noted that the method of adjusting the temperature of the substrate 41 by changing the distance between the heating element 20 and the placement position 31 requires prior theoretical calculation or simulation to determine the heat radiated to the placement position 31 or the temperature of the placement position 31 under different distance conditions. This is so that in actual operation, the ideal temperature of the placement position 31 can be obtained by adjusting the distance between the heating element 20 and the placement position 31.

[0033] The distance adjustment method between the heating element 20 and the placement position 31 can include various methods. In some embodiments, the distance between the heating element 20 and the placement position 31 can be adjusted in stages. That is, for a certain period of time, the distance between the heating element 20 and the placement position 31 is maintained at a specific size, and for another period of time, the distance between the heating element 20 and the placement position 31 is maintained at another specific size. By gradually decreasing the distance between the heating element 20 and the placement position 31, the temperature at the placement position 31 is adjusted in stages. In other embodiments, the distance between the heating element 20 and the placement position 31 can be decreased slowly at a specific rate, thereby causing the temperature at the placement position 31 to rise slowly.

[0034] In the fabrication process of perovskite solar cells, a precursor solution is first required. This precursor solution typically consists of organic halides, including methylamine iodide and formamidinium iodide, for example, methylamine (MA, CH3NH3). + ), formamidin (FA, HC(NH2)2 + ) or cesium (Cs) + Materials such as lead iodide (PbI2) and lead bromide (PbBr2) are dissolved in organic solvents (such as dimethylformamide and dimethyl sulfoxide) to prepare perovskites. Organic halide salts can adjust the band gap and stability of perovskites, while inorganic halides provide the inorganic framework for the perovskite. The proportions of each component are precisely controlled according to the target perovskite structure and performance requirements.

[0035] In the fabrication of perovskite solar cells, the heating and annealing process after the precursor solution is coated onto the substrate 41 is a crucial step. Since the precursor solution contains solvent, the annealing process evaporates the solvent through heating, thereby improving the quality of the thin film. Furthermore, the high temperature during annealing helps to rearrange the perovskite crystals and improve their stability. By controlling the annealing temperature and time, the crystallinity and morphology of the perovskite layer can be optimized, thus improving the photoelectric conversion efficiency of the perovskite solar cell and enhancing the photoelectric conversion performance of the perovskite layer.

[0036] Before coating, the substrate 41 needs to be cleaned and surface-treated to ensure good adhesion and electrical contact. Common treatment methods include ultrasonic cleaning, ultraviolet ozone treatment, or surface modification.

[0037] The precursor solution can be coated onto the substrate 41 using spin coating, slot coating, or inkjet printing. When using spin coating, the precursor solution is dropped onto the substrate and uniformly distributed by high-speed rotation (usually 1000-5000 rpm).

[0038] The perovskite crystal structure is typically of the ABX3 type, where the A-site is usually an organic cation, such as a methylamine ion (CH3NH3). + ) or cesium ions (Cs + The B site is usually a metal cation, such as lead (Pb). 2+ ) or tin (Sn 2+ The X-position is usually occupied by a halide anion, such as iodine (I). - ), bromine (Br - ) or chlorine (Cl - In the crystal structure described above, the boron ion is located at the center of the cubic unit cell and is surrounded by six x ions to form an octahedral coordination. The atom is located at the corner of the unit cell and is surrounded by twelve x ions. The commonly used materials for the perovskite layer are CH3NH3PbI3 (MAPbI3) or CsPbI3, which are responsible for absorbing photons and generating electron-hole pairs.

[0039] Of course, the A-site, B-site, and X-site of perovskite materials can be iteratively replaced, and the family of materials that synthesize this crystal structure are collectively referred to as perovskite materials.

[0040] like Figure 1 As shown, the heating element 20 is disposed at the top of the heating chamber 11, and the placement position 31 is disposed at the bottom of the heating chamber 11. The support platform 30 can move vertically relative to the heating element 20. With the above arrangement, the distance between the two can be adjusted by moving the support platform 30 vertically relative to the heating element 20, which has the advantages of easy arrangement and simple structure.

[0041] like Figure 3 As shown, in some embodiments, the heating element 20 can be configured to be movable in a vertical direction. In other embodiments, the support platform 30 can be configured to be movable in a vertical direction. Or, as... Figure 2 As shown, in other embodiments, both the heating element 20 and the support platform 30 can be configured to be movable in the vertical direction.

[0042] Generally, regardless of whether the heating element 20 or the support platform 30 is moved, a driving component is required to move either the heating element 20 or the support platform 30. The driving components for the heating element 20 and the support platform 30 can be of the same type, or they can be different types. It should be noted that since the heating element 20 is located inside the heating cavity 11, the driving component can be located outside the housing 10 and a transmission structure can be used to move the heating element 20, thus avoiding damage to the driving component from the high-temperature environment.

[0043] Specifically, the heating element 20 can employ either infrared heating or indirect heating. Infrared heating is based on the infrared portion of electromagnetic waves, utilizing infrared radiation energy to directly heat the object. Based on the wavelength range of electromagnetic waves, infrared heating can be categorized into near-infrared, mid-infrared, far-infrared, and extreme far-infrared.

[0044] Heating in a sealed cavity is an annealing method that transfers heat through a sealed cavity. This slows down the heat transfer rate, resulting in a more uniform heat distribution and thus improving the crystallinity of perovskite films.

[0045] In other embodiments, the relative positions of the heating element 20 and the support platform 30 can be adaptively adjusted according to the actual structure of the heating cavity 11. For example, the heating element 20 can be arranged on the side of the heating cavity 11. Of course, in order to facilitate the placement and removal of the substrate 41, the support platform 30 is generally located at the bottom of the heating cavity 11, with the placement position 31 facing upwards.

[0046] like Figure 1 As shown, the support platform 30 includes a column 32 and a support plate 33. A placement position 31 is disposed on the surface of the support plate 33, and the column 32 is disposed on the side of the support plate 33 away from the heating element 20. The column 32 is retractable. The support platform 30 with the above structure utilizes the support plate 33 to provide the placement position 31 for supporting the substrate 41, and uses the column 32 to move the support plate 33. It has the advantages of simple structure and ease of installation.

[0047] In some embodiments, the column 32 can be arranged outside the housing 10 and extended into the heating chamber 11 via a transmission structure to avoid damage to the column 32 caused by the high-temperature environment. In other embodiments, if the selected column 32 can operate in a high-temperature environment, the column 32 can also be arranged inside the heating chamber 11.

[0048] To ensure more stable support for the support plate 33 by the columns 32, multiple columns 32 can be installed on the side of the support plate 33 away from the heating element 20. These multiple columns 32 can simultaneously support and adjust the height of the support plate 33. Of course, to guarantee stability during height adjustment, the multiple columns 32 should be controlled by the same control unit.

[0049] Of course, using the column 32 to support the cable entry of the bearing plate 33 is only the most basic structure of the bearing platform 30. To make the connection between the column 32 and the bearing plate 33 more stable, reinforcing ribs or reinforcing plates can be set between the column 32 and the bearing plate 33.

[0050] In some embodiments, when the heating element 20 moves, the heating element 20 can also be supported by a column 32, and the movement of the heating element 20 can be achieved by the telescopic arrangement of the column 32.

[0051] In one embodiment, the heating device further includes a control component. The column 32 includes a column body 321 and a push rod 322 passing through the column body 321. The push rod 322 is connected to the support plate 33. The control component is driven by the column 32 to move the push rod 322 relative to the column body 321. By controlling the column 32 through the control component, the push rod 322 of the column 32 can move relative to the column body 321, enabling automated adjustment of the support platform 30 and improving production efficiency.

[0052] In some embodiments, the column 32 includes an electric cylinder that drives the column 32 to extend and retract by means of electrical energy, which has the advantages of easy material sourcing and low cost.

[0053] Electric cylinders are actuators that use electrodes to drive lead screws or gears to achieve linear motion. The power source for electric cylinders is electrical energy, and their control components are primarily electrode controllers, such as servo drivers or stepper drivers.

[0054] In some embodiments, the column 32 includes a hydraulic cylinder. Driving the column 32 to extend or retract via hydraulic drive offers advantages such as easy material sourcing and low cost.

[0055] Hydraulic cylinders are actuators that rely on hydraulic oil as their power source. The control elements of hydraulic cylinders are mainly hydraulic valves, such as solenoid directional valves or proportional control valves. The aforementioned hydraulic valves usually integrate solenoid valves to control the flow direction and pressure of hydraulic oil.

[0056] In some embodiments, the column 32 includes a cylinder. Driving the column 32 to extend or retract via compressed gas offers advantages such as easy material sourcing and low cost.

[0057] The cylinder is an actuator that uses compressed air as its power source. It mainly controls the flow of air and its direction through a solenoid valve, thereby driving the cylinder push rod 322 to move. By switching the solenoid valve, the cylinder can extend, retract, or stop.

[0058] Therefore, different control components should be selected according to the different forms of the column 32.

[0059] like Figure 7 As shown in Embodiment 2 of the present invention, a method for preparing a perovskite battery is provided. The perovskite battery is prepared using a heating device, and the method for preparing the perovskite battery includes the following steps.

[0060] like Figure 4 As shown, a substrate 41 is obtained, and a perovskite thin film is prepared on the substrate 41 to obtain an intermediate unit. Through the above steps, a perovskite thin film is prepared, which can provide raw materials for the formation of the perovskite layer.

[0061] Adjust the distance between the heating element and the placement position to a first preset distance, start the heating element to bring the temperature at the placement position to the first preset temperature, and then place the intermediate unit at the placement position. By using the above steps, by adjusting the distance between the heating element and the placement position to the first preset distance, the temperature at the placement position can reach the first preset temperature after the heating element is started. This allows the perovskite to remove the solvent from the precursor solution at a lower temperature, providing suitable conditions for perovskite nucleation.

[0062] The distance between the heating element and the placement position is reduced to raise the temperature at the placement position. When the distance between the heating element and the placement position reaches a second preset distance, the intermediate unit is removed from the placement position. By adopting the above steps, reducing the distance between the heating element and the placement position increases the heat radiated from the heating element to the placement position, thereby raising the temperature at the placement position. Under a higher temperature environment, the perovskite crystal nuclei grow, and the crystal growth process is more complete and orderly. Furthermore, when the distance between the heating element and the placement position reaches the second preset distance, the temperature at the placement position rises to the second preset temperature, and the crystallization process of the perovskite is completed. At this point, the intermediate unit, after crystallization, can be removed from the placement position.

[0063] It should be noted that in the preparation method provided in this embodiment, the output power of the heating element remains unchanged throughout. The only difference is that the distance between the heating element and the placement position is initially set to a first preset distance to ensure the temperature at the placement position reaches a first preset temperature. During subsequent annealing, the distance between the heating element and the placement position is reduced to increase the temperature at the placement position. Furthermore, when the distance between the heating element and the placement position reaches a second preset distance, and the temperature at the placement position reaches a second preset temperature, the annealing process of the perovskite is considered complete.

[0064] The preparation method provided in this embodiment requires prior calculation of the distance between the heating element and the placement position, and the temperature at the placement position, in order to determine that the temperature at the placement position can reach a specific temperature at a certain distance. Alternatively, the distance between the heating element and the placement position, and the temperature at the placement position, can be simulated.

[0065] Of course, for perovskite solar cells made of different materials, parameters such as preset distance and preset temperature need to be adjusted accordingly to achieve the best results.

[0066] Regarding the selection of the final termination condition, the distance between the heated element and the placement position can be used as the termination criterion, or the temperature at the placement position can be used as the termination criterion. Of course, a combination of the two methods can also be used as the determination criterion.

[0067] like Figure 8 As shown, in Embodiment 2, the step of reducing the distance between the heating element and the placement position to raise the temperature at the placement position, and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance, includes the following steps.

[0068] The intermediate unit is held in place for a first preset time. By using the above steps, the intermediate unit can be annealed at a first preset temperature to evaporate the solvent in the precursor solution.

[0069] The distance between the heating element and the substrate 41 is decreased sequentially according to a preset order, and the intermediate unit is held at the placement position for different second preset times depending on the different distances between the heating element and the placement position. By using the above steps, the heat radiated by the heating element to the placement position can be increased sequentially according to the set order, thereby raising the temperature at the placement position sequentially according to the set order, and holding the intermediate unit for different second preset times under different temperature conditions, so as to achieve step-by-step annealing of the intermediate unit.

[0070] When the distance between the heating element and the placement position reaches a second preset distance, the intermediate unit is held at the placement position for a third preset time. Through the above steps, when the distance between the heating element and the placement position reaches the second preset distance, and the intermediate unit is held at the placement position for a third preset time, it can be determined that the growth of the perovskite crystal has ended and the annealing process of the intermediate unit is completed.

[0071] The phrase "decreasing the distance between the heating element and the substrate 41 in a preset order" refers to gradually decreasing the distance between the heating element and the placement position. For example, the distance between the heating element and the placement position is decreased in the following order: L1, L2, L3, L4, L5, Ln, where L1 is the first preset distance and Ln is the second preset distance. Therefore, L1>L2>L3>L4>L5…>Ln.

[0072] It should be noted that the intermediate unit is held at the placement position for a second preset time depending on the different distances between the heating element and the placement position. This means that for each distance value between the heating element and the placement position, the intermediate unit is held at the placement position for the second preset time. For example, when the distance between the heating element and the placement position is L1, the intermediate unit is held at the placement position for a time T1; when the distance is L2, the intermediate unit is held at the placement position for a time T2; when the distance is L3, the intermediate unit is held at the placement position for a time T3; and when the distance is Ln, the intermediate unit is held at the placement position for a time Tn.

[0073] For each distance value between the heating element and the placement position, the intermediate unit can remain at the placement position for the same or different times. That is, T1, T2, T3, ... Tn can be the same or different. The specific situation is determined according to actual needs.

[0074] By employing the above steps, the distance between the heating element and the placement position can be adjusted stepwise, thereby allowing for stepwise temperature adjustments at the placement position. This enables annealing of the intermediate unit at different temperature levels, achieving stepwise annealing of the intermediate unit. In the initial stage, at a lower temperature level, most of the solvent in the precursor solution is slowly removed, reducing defects caused by rapid solvent evaporation and providing suitable conditions for nucleation. In subsequent gradually increasing temperature levels, crystal growth is promoted, preventing excessively rapid crystal growth and defects, reducing thermal stress during subsequent annealing, and slowing down the crystallization process by appropriately reducing the crystallization driving force during annealing. This increases the grain size, crystallinity, and density of the PVK film, while reducing roughness.

[0075] Remove the intermediate unit from its placement position. After the intermediate unit has undergone annealing, remove it from its placement position to proceed to the next step, completing the fabrication process of the perovskite solar cell.

[0076] like Figure 4 As shown, the step of preparing a perovskite thin film on substrate 41 to obtain an intermediate unit includes the following steps.

[0077] A bottom electrode 42, an electron transport layer 43, and a perovskite light-absorbing layer 44 are sequentially fabricated on a substrate 41. By employing the above steps, the bottom electrode 42 allows light to be introduced into the perovskite light-absorbing layer 44, and the generated current is collected. The electron transport layer 43 collects the electrons generated after light absorption. After annealing the perovskite light-absorbing layer 44, a crystallized perovskite layer is obtained.

[0078] The bottom electrode 42 is a crucial component of the photovoltaic module, formed on the substrate 41 through a patterned process. It typically employs materials with high light transmittance and good conductivity, such as fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO). These materials effectively guide light into the perovskite light-absorbing layer 44 and collect the generated current. Alternatively, the bottom electrode 42 can also be a flexible electrode, such as polyimide (PI), polyethylene terephthalate (PET), or polyethylene naphthalate (PEN). These materials are commonly used as flexible substrates for fabricating transparent conductive electrodes or other functional thin-film electrodes. In flexible transparent conductive electrodes, the flexible substrate can be combined with a metal mesh or conductive material to form a high-performance electrode structure.

[0079] The electron transport layer 43 is located between the substrate 41 and the perovskite light-absorbing layer 44, and its main function is to transport electrons. Commonly used materials for the electron transport layer 43 include titanium dioxide (TiO2), aluminum oxide (Al2O3), and zinc oxide (ZnO). These materials have good electron mobility and stability, and can transport electrons generated in the perovskite light-absorbing layer 44 to the bottom electrode 42. Generally, the electron transport layer 43 is usually prepared by vapor deposition, but atomic layer deposition (ALD) technology can also be used.

[0080] Perovskite crystals typically have an ABX3 type structure, where the A-site is usually an organic cation, such as a methylamine ion (CH3NH3). + ) or cesium ions (Cs + The B site is usually a metal cation, such as lead (Pb). 2+ ) or tin (Sn 2+ The X-position is usually occupied by a halide anion, such as iodine (I). - ), bromine (Br - ) or chlorine (Cl - In the crystal structure described above, the boron ion is located at the center of the cubic unit cell and is surrounded by six x ions to form an octahedral coordination. The atom is located at the corner of the unit cell and is surrounded by twelve x ions. The commonly used materials for the perovskite layer are CH3NH3PbI3 (MAPbI3) or CsPbI3, which are responsible for absorbing photons and generating electron-hole pairs.

[0081] Of course, the A-site, B-site, and X-site of perovskite materials can be iteratively replaced, and the family of materials that synthesize this crystal structure are collectively referred to as perovskite materials.

[0082] In this process, the surface of the perovskite light-absorbing layer 44, which utilizes perovskite, is typically provided with a passivation layer. This passivation layer fills defects on the surface and at grain boundaries of the perovskite material, reduces electron-hole recombination, and thus improves the open-circuit voltage of the photovoltaic module. The passivation layer is usually made of organic halide salts (OAl, PRAAl, etc.), lead oxide salts, or similar materials.

[0083] After the step of removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches the second preset distance, the method for preparing a perovskite solar cell further includes the following steps.

[0084] like Figure 5 As shown, a hole transport layer 45 and a metal electrode 46 are sequentially fabricated on a perovskite thin film. The hole transport layer 45 collects holes generated in the perovskite light-absorbing layer 44 and blocks the back-transmission of electrons. The metal electrode 46 collects current.

[0085] The hole transport layer 45 efficiently transports holes generated in the perovskite light-absorbing layer 44 to the metal electrode 46 and blocks the reverse transport of electrons, reducing electron-hole recombination and improving the photoelectric conversion efficiency of the photovoltaic module. Commonly used materials for the hole transport layer 45 include organic small molecule materials such as Spiro-OMeTAD, polymer materials such as PTAA, and p-type inorganic oxides.

[0086] Metal electrode 46 is the last layer of the perovskite functional layer, primarily serving to collect current. Commonly used materials for metal electrode 46 include gold (Au), silver (Ag), and copper (Cu). These materials possess good conductivity and stability, enabling them to effectively collect and dissipate the current generated by the photovoltaic module.

[0087] It should be noted that the specific positions of the electron transport layer 43 and the hole transport layer 45 may be interchanged in different types of photovoltaic cells.

[0088] like Figure 6 As shown, an encapsulation layer 47 is fabricated on the substrate 41 and the metal electrode 46, and a cover plate 48 is placed on the side of the encapsulation layer 47 away from the substrate 41. By using the above steps, the perovskite functional layer can be encapsulated by the encapsulation layer 47 to prevent water and oxygen corrosion. The cover plate 48 provides protection for the encapsulation layer 47 and the perovskite functional layer, preventing impact from rainwater and external debris such as stones, as well as heat shock or chemical corrosion.

[0089] Based on the different types of substrates 41, photovoltaic modules can be divided into single-glass modules and double-glass modules. In single-glass modules, the substrate 41 is made of a polymer organic backsheet printed with aluminum paste, typically made of materials such as polyethylene terephthalate (PET), polyvinylidene fluoride (PVF), polyvinylidene fluoride (PVDF), and polyethylene (PE). Sunlight can only enter the interior of the single-glass module through the cover plate 48, therefore, the power generation efficiency of single-glass modules is relatively low. In double-glass modules, both the substrate 41 and the cover plate 48 are generally made of tempered glass, allowing sunlight to enter the interior of the module from both sides, resulting in a higher power generation efficiency compared to single-glass modules.

[0090] Generally, the encapsulation layer 47 includes an inner encapsulation layer 47 and a border encapsulation layer 47 corresponding to the perovskite functional layer. The inner encapsulation layer 47 plays a major role in encapsulating the perovskite functional layer, and commonly used materials include EVA (ethylene-vinyl acetate copolymer), POE (polyolefin elastomer), or PVB (polyvinyl butyral), which have good light transmittance and adhesion. The border encapsulation layer 47 surrounds the periphery of the perovskite functional layer and the inner encapsulation layer 47, and is connected to the substrate 41 and the cover plate 48, respectively. In some embodiments, the outer encapsulation layer 47 can be made of materials such as silicone or modified silicone. For example, butyl rubber, a one-component adhesive made from butyl rubber (IIR) as the base material by adding modifiers such as polyisobutylene (PIB).

[0091] The encapsulation layer 47 is cured to obtain a perovskite solar cell. By using the above steps to cure the encapsulation layer 47, the connection between the substrate 41 and the cover plate 48, as well as the connection between the perovskite functional layer and the cover plate 48, can be made tighter, thereby preventing water and oxygen intrusion.

[0092] like Figure 9 As shown, Embodiment 3 of the present invention provides a method for preparing a perovskite battery. The difference between Embodiment 3 and Embodiment 2 is that in Embodiment 3, the distance between the heating element and the placement position is reduced so that the temperature at the placement position increases. When the distance between the heating element and the placement position reaches a second preset distance, the step of removing the intermediate unit from the placement position includes the following steps.

[0093] The distance between the heating element and the placement position is reduced at a preset speed within a fourth preset time.

[0094] By employing the above steps, by reducing the distance between the heating element and the placement position at a preset speed and within a fourth preset time, a slow change in the distance between the heating element and the placement position can be achieved, thereby causing a slow change in the temperature at the placement position, achieving a slow heating of the substrate 41, and thus annealing the perovskite film under suitable temperature rise conditions.

[0095] When the distance between the heating element and the placement position reaches the second preset distance, the intermediate unit is removed from the placement position. By using the above steps, when the distance between the heating element and the placement position reaches the second preset distance, it can be determined that the annealing process of the perovskite film is completed, and the intermediate unit can be removed from the placement position.

[0096] It should be noted that the fourth preset time in Embodiment 3 is not related to the preset times in Embodiment 2. Embodiments 2 and 3 provide different annealing processes, and the specific preset distance and preset time values ​​need to be determined according to the actual situation.

[0097] Except for the structure described above, the preparation method of Example 3 is the same as that of Example 2. The repeated parts will not be described again.

[0098] Since the principle of solving the problem in the perovskite battery preparation method embodiment is similar to that in the heating device embodiment described above, the implementation of the perovskite battery preparation method embodiment can refer to the implementation of the heating device embodiment described above, and the repeated parts will not be described again.

[0099] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0100] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0101] In the description of this invention, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is generally based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this invention and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this invention; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0102] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0103] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this invention.

[0104] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A heating device, characterized in that, include: The casing has a heating chamber; A heating element is disposed within the heating chamber; The support platform has a placement position for placing a substrate, the placement position being located within the heating cavity, the heating element and the placement position being disposed opposite each other, and the heating element and the support platform being movable relative to each other to adjust the distance between the placement position and the heating element.

2. The heating device according to claim 1, characterized in that, The heating element is disposed at the top of the heating chamber, the placement position is disposed at the bottom of the heating chamber, and the support platform is capable of moving vertically relative to the heating element.

3. The heating device according to claim 1, characterized in that, The support platform includes a column and a support plate. The placement position is disposed on the surface of the support plate. The column is disposed on the side of the support plate away from the heating element. The column is telescopically oriented.

4. The heating device according to claim 3, characterized in that, The heating device further includes a control component. The column includes a column body and a push rod passing through the column body. The push rod is connected to the support plate. The control component is driven to the column body to move the push rod relative to the column body.

5. The heating device according to claim 3, characterized in that, The column includes an electric cylinder, a hydraulic cylinder, or a pneumatic cylinder; and / or, The heating element includes an infrared heating element.

6. A method for fabricating a perovskite solar cell, wherein the perovskite solar cell is fabricated using a heating device, the heating device comprising a housing, a heating element, and a support platform, the housing having a heating cavity, the support platform having a placement position for placing a substrate, the heating element and the placement position being disposed opposite to each other, and the heating element and the support platform being movable relative to each other, characterized in that, include: Obtain a substrate and prepare a perovskite thin film on the substrate to obtain an intermediate unit; Adjust the distance between the heating element and the substrate to a first preset distance, activate the heating element to bring the temperature at the placement position to the first preset temperature, and place the intermediate unit at the placement position; The distance between the heating element and the placement position is reduced to increase the temperature at the placement position. When the distance between the heating element and the placement position reaches a second preset distance, the intermediate unit is removed from the placement position.

7. The method for preparing a perovskite solar cell according to claim 6, characterized in that, The step of reducing the distance between the heating element and the placement position to raise the temperature at the placement position, and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance, includes: The intermediate unit is held at the placement position for a first preset time; The distance between the heating element and the placement position is decreased sequentially according to a preset order, and the intermediate unit is held at the placement position for different second preset times according to different distances between the heating element and the placement position. When the distance between the heating element and the placement position reaches a second preset distance, the intermediate unit is held at the placement position for a third preset time; Remove the intermediate unit from the placement position.

8. The method for preparing a perovskite solar cell according to claim 6, characterized in that, The step of reducing the distance between the heating element and the placement position to raise the temperature at the placement position, and removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance, includes: The distance between the heating element and the placement position is reduced at a preset speed within a fourth preset time period; When the distance between the heating element and the placement position reaches a second preset distance, the intermediate unit is removed from the placement position.

9. The method for preparing a perovskite solar cell according to claim 6, characterized in that, The step of preparing a perovskite thin film on the substrate to obtain an intermediate unit includes: A bottom electrode, an electron transport layer, and a perovskite light-absorbing layer are sequentially fabricated on the substrate.

10. The method for preparing a perovskite solar cell according to claim 6, characterized in that, After the step of removing the intermediate unit from the placement position when the distance between the heating element and the placement position reaches a second preset distance, the method further includes: A hole transport layer and a metal electrode are sequentially fabricated on the perovskite thin film; An encapsulation layer is formed on the substrate and the metal electrode, and a cover plate is placed on the side of the encapsulation layer away from the substrate. The encapsulation layer is cured to obtain a perovskite solar cell.

Images