Preparation method of adapter plate, adapter plate and chip packaging structure

Abstract

The invention provides a preparation method of an adapter plate, the adapter plate and a chip packaging structure. The preparation method of the adapter plate comprises the steps of forming at least one hole in a first surface of a substrate; depositing a conductive paste on the first surface such that the conductive paste covers the hole, the conductive paste comprising a nanometal; placing the substrate in an electric field or a magnetic field, so that the conductive slurry moves under the action of the electric field or the magnetic field to fill the hole; and performing high-temperature curing treatment on the substrate to obtain the adapter plate. According to the technical scheme, the hole filling quality of the adapter plate can be improved, the cost is reduced, and the production efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of chip packaging technology, specifically a method for preparing an adapter board, the adapter board, and a chip packaging structure. Background Technology

[0002] With the booming development of emerging fields such as smartphones, wearable devices, automotive electronics, and artificial intelligence, integrated circuits are developing towards diversified applications, and 3D packaging technology is gradually becoming an important means to achieve miniaturization, lightweighting, and multifunctionality of electronic products.

[0003] Through-glass via (TGV) interconnect is an advanced three-dimensional integrated circuit technology with advantages such as excellent high-frequency electrical characteristics, low cost, simple process flow, and strong mechanical stability. It has broad application prospects in fields such as radio frequency devices, micro-motor system packaging, and optoelectronic system integration. However, the fabrication of glass transition plates still faces technical challenges. Summary of the Invention

[0004] To address the aforementioned issues, this application provides a method for preparing an adapter board, the adapter board itself, and a chip packaging structure.

[0005] In a first aspect, embodiments of this application provide a method for preparing an adapter plate, comprising: forming at least one hole on a first surface of a substrate; depositing a conductive paste on the first surface such that the conductive paste covers the hole, the conductive paste comprising nano-metals; placing the substrate in an electric field or a magnetic field such that the conductive paste moves under the action of the electric field or magnetic field to fill the hole; and performing a high-temperature curing treatment on the substrate to obtain the adapter plate.

[0006] In conjunction with the first aspect, the conductive paste is magnetic, and the magnetic field includes a first magnetic field. Placing the substrate in an electric or magnetic field, causing the conductive paste to move under the action of the electric or magnetic field to fill the holes, includes: placing the substrate in the first magnetic field, causing the conductive paste to move under the action of the first magnetic field to fill the holes; preferably, the strength of the first magnetic field is greater than or equal to 0.1 T; preferably, the first magnetic field is constructed by a magnet; or, the first magnetic field is constructed by an electromagnetic coil; or, the first magnetic field is constructed by both a magnet and an electromagnetic coil.

[0007] In conjunction with the first aspect, the conductive paste includes magnetic molecules; preferably, the magnetic molecules include at least one of the following: nano-nickel-iron alloy, nano-iron-cobalt alloy, nano-iron-nickel-cobalt alloy, nano-ferric oxide, nano-ferric oxide, nano-cobalt tetraoxoferrate, nano-manganese tetraoxoferrate, and nano-nickel tetraoxoferrate; preferably, the proportion of nano-metals in the conductive paste is greater than or equal to 60% and less than or equal to 80%; preferably, the proportion of magnetic molecules in the conductive paste is greater than or equal to 10% and less than or equal to 25%.

[0008] In conjunction with the first aspect, the nano-metal is a magnetic particle; preferably, before the step of depositing a conductive paste on the first surface, the method for preparing the adapter plate further includes: placing the conductive paste in a second magnetic field, so that the nano-metal in the conductive paste becomes magnetic; or, the method for preparing the adapter plate further includes: placing the nano-metal in a second magnetic field, so that the nano-metal becomes magnetic; and making the magnetic nano-metal into a conductive paste; preferably, the strength of the second magnetic field is greater than or equal to 0.2 T and less than or equal to 0.5 T.

[0009] In conjunction with the first aspect, placing the substrate in an electric or magnetic field, causing the conductive paste to move under the influence of the electric or magnetic field to fill the holes, includes: placing the substrate in an electric field, causing the conductive paste to move under the influence of the electric field to fill the holes; preferably, the strength of the electric field is greater than or equal to 5 × 10⁻⁶. 8 V / m and less than or equal to 6 × 10 8 V / m.

[0010] In conjunction with the first aspect, the holes include blind holes. After the step of high-temperature curing the substrate, the method for preparing the adapter plate further includes: thinning the second surface of the substrate to make the blind holes become through holes, with the second surface and the first surface being disposed opposite to each other; preferably, placing the substrate in an electric field or magnetic field, so that the conductive paste moves under the action of the electric field or magnetic field to fill the holes, including: placing the substrate in an electric field or magnetic field and placing the substrate under vacuum conditions, so that the conductive paste moves under the action of the electric field or magnetic field to fill the holes; preferably, the vacuum degree of the vacuum conditions is greater than or equal to 5 Torr and less than or equal to 100 Torr.

[0011] In conjunction with the first aspect, the proportion of nano-metals in the conductive paste is greater than or equal to 60% and less than or equal to 80%; preferably, the particle size of the nano-metals is greater than or equal to 1 nm and less than or equal to 100 nm; preferably, the nano-metals include one or more of nano-silver, nano-copper, nano-gold, and aluminum alloys; preferably, the viscosity of the conductive paste is greater than or equal to 30 cps and less than or equal to 5000 cps; preferably, the conductive paste further includes carbon nanotubes, and the proportion of carbon nanotubes in the conductive paste is greater than or equal to 3% and less than or equal to 10%; or, the conductive paste further includes nickel rods, and the proportion of nickel rods in the conductive paste is greater than or equal to 3% and less than or equal to 10%; preferably, depositing the conductive paste on the first surface includes: spraying the conductive paste on the first surface using an inkjet printing process, so that the conductive paste covers the holes; preferably, the substrate is subjected to high-temperature curing treatment, including: moving the substrate to a high-temperature oven and subjecting the substrate to high-temperature curing treatment; preferably, the temperature of the high-temperature curing treatment is greater than or equal to 85°C and less than or equal to 200°C, and the time of the high-temperature curing treatment is greater than or equal to 15 minutes. The time is less than or equal to 30 min; preferably, after the step of high-temperature curing the substrate, the method of preparing the adapter plate further includes: removing residual substances on the substrate; preferably, the residual substances on the substrate are removed by laser or grinding process; preferably, before the step of forming at least one hole on the substrate, the method of preparing the adapter plate further includes: cleaning the substrate; the hole diameter is greater than or equal to 5 µm and less than or equal to 100 µm; preferably, the hole includes a through hole.

[0012] Secondly, this application also provides an adapter plate, including at least one hole filled with a conductive pillar, the conductive pillar being made of nano-metal, and the adapter plate being prepared according to the above method.

[0013] In conjunction with the second aspect, the nanometal includes at least one of: nanosilver, nanocopper, nanometal, and bismuth alloy; preferably, the coefficient of thermal expansion of the nanometal is greater than or equal to 0.4 ppm / K and less than or equal to 13 ppm / K; preferably, the maximum current density of the nanometal is greater than 107 A / cm². 2 Preferably, the material of the conductive pillar further includes magnetic molecules, and the mass ratio of the magnetic molecules to the nano-metal is greater than or equal to 1 / 8 and less than or equal to 5 / 12; preferably, the material of the conductive pillar further includes carbon nanotubes; the mass ratio of carbon nanotubes to the nano-metal is greater than or equal to 3 / 80 and less than or equal to 1 / 6; or, the material of the conductive pillar further includes nickel rods, and the mass ratio of nickel rods to the nano-metal is greater than or equal to 3 / 80 and less than or equal to 1 / 6; preferably, the thickness of the adapter plate is greater than or equal to 100 µm and less than or equal to 500 µm; preferably, the aperture of the hole is greater than or equal to 5 µm and less than or equal to 100 µm; preferably, the hole includes a through hole.

[0014] Thirdly, embodiments of this application also provide a chip packaging structure, including the aforementioned adapter board.

[0015] Through the above technical solution, when preparing the adapter plate, the nano-metal moves directionally under the action of a magnetic field or electric field, guiding the conductive paste to fill the holes, which can avoid the occurrence of central voids, improve the filling quality of the adapter plate, and the conductive paste has a faster filling speed under the action of a magnetic field or electric field, thus improving production efficiency; eliminating the electroplating process can greatly reduce production costs. Attached Figure Description

[0016] Figure 1 This is a schematic flowchart of a method for preparing an adapter plate according to an embodiment of this application.

[0017] Figures 2a to 2f This is a schematic diagram of the fabrication method of the adapter plate provided in one embodiment of this application.

[0018] Figure 3 This is a schematic flowchart of a method for preparing an adapter plate according to another embodiment of this application.

[0019] Figures 4a to 4e This is a schematic diagram of the fabrication method of the adapter plate provided in another embodiment of this application. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0021] In semiconductor device packaging, through-silicon vias (TSVs) and through-glass vias (TGVs) play a crucial role in achieving higher-density interconnects, improving performance, and reducing power consumption, making them key technologies for 3D integration. Compared to TSV structures, TGV structures offer advantages such as lower cost, superior electrical performance, and stronger mechanical stability, making them a hot research topic in the industry. However, one of the technical challenges hindering the application of TGVs is the via-filling technology.

[0022] To address the aforementioned technical problems, this application provides a method for preparing an adapter plate, comprising: forming at least one hole on a first surface of a substrate; depositing a conductive paste on the first surface such that the conductive paste covers the hole, the conductive paste comprising nano-metals; placing the substrate in an electric field or a magnetic field, causing the conductive paste to move under the influence of the electric field or magnetic field to fill the hole; and subjecting the substrate to high-temperature curing to obtain the adapter plate. In this application embodiment, the conductive paste comprises nano-metals, which can move directionally under the influence of a magnetic field or electric field, thereby guiding the conductive paste to fill the hole. This avoids the problem of central voids that easily occur in the copper plating process, improving the hole-filling quality of the adapter plate; furthermore, under the influence of a field, the conductive paste has a faster filling speed, which can reduce costs and improve production efficiency.

[0023] Figure 1 This is a schematic flowchart of a method for preparing an adapter plate according to an embodiment of this application. Figures 2a to 2f This is a schematic diagram of the fabrication method of the adapter plate provided in one embodiment of this application. Figure 1 As shown, the preparation method of this adapter plate includes the following steps.

[0024] Step S110: At least one hole is formed on the first surface 110 of the substrate.

[0025] In the embodiments of this application, the substrate includes at least one selected from glass substrate, silicon substrate, ceramic substrate, polymer substrate, etc. Preferably, the substrate is a glass substrate. Exemplarily, the substrate includes at least one selected from borosilicate glass, aluminoborosilicate glass, quartz glass, alkali-free glass, alkaline glass, etc.

[0026] Optionally, the hole includes a through hole or a blind hole. Figures 2a to 2f The following explanation uses a through hole as an example. Figure 2a As shown, at least one hole 101 is provided on the substrate 10, and the hole 101 is a through hole. In this embodiment, the method for forming the hole includes at least one of the following: laser-induced wet etching, laser ablation, focused discharge, plasma etching, electrochemical discharge machining, and sandblasting. Preferably, the hole is formed on the substrate using laser-induced wet etching. In this embodiment, if the hole diameter is too small, it is not conducive to the filling of the hole with conductive paste. Optionally, the hole diameter is greater than or equal to 5 µm and less than or equal to 100 µm, preferably greater than or equal to 40 µm and less than or equal to 50 µm. Exemplarily, the hole diameter is 5 µm, 10 µm, 20 µm, 30 µm, 40 µm, 50 µm, 60 µm, 70 µm, 80 µm, 90 µm, or 100 µm.

[0027] Optionally, before forming at least one hole on the first surface 110 of the substrate, the method further includes cleaning the substrate. For example, the substrate is ultrasonically cleaned sequentially with ethanol (or acetone) and deionized water for a period of time (e.g., 10 min, 20 min, 30 min, 40 min, 50 min, 60 min, etc.), and the cleaned substrate is then heated and dried.

[0028] Step S120: Deposit conductive paste on the first surface 110 such that the conductive paste covers the hole.

[0029] Optionally, a conductive paste is sprayed onto the first surface 110 using inkjet printing technology, so that the conductive paste covers the holes. For example... Figure 2b As shown, the inkjet printer nozzle 30 sprays conductive paste 20 onto the first surface 110, covering the first surface 110 and the holes 101. In this embodiment, the viscosity of the conductive paste is greater than or equal to 30 cps and less than or equal to 5000 cps. Exemplarily, the viscosity of the conductive paste is 30 cps, 100 cps, 500 cps, 1000 cps, 2000 cps, 3000 cps, 4000 cps, or 5000 cps. If the viscosity of the conductive paste is too low, there is too much solvent, and during high-temperature curing, the conductive paste shrinks excessively, preventing the conductive material from completely filling the holes, resulting in poor filling. If the viscosity of the conductive paste is too high, there is too little solvent, and the conductive paste may not completely fill the holes, also causing poor filling.

[0030] In this embodiment, the conductive paste includes nano-metals. Optionally, the proportion of nano-metals in the conductive paste (i.e., solid content) is greater than or equal to 60% and less than or equal to 80%. Exemplarily, the proportion of nano-metals in the conductive paste is 60%, 65%, 70%, 75%, or 80%. Within this solid content range, it can be ensured that no pores will appear after the organic solvent evaporates after the conductive paste cures. Optionally, the nano-metals include one or more of nano-silver, nano-copper, nano-gold, and aluminum alloys. In some embodiments, the conductive paste further includes carbon nanotubes, i.e., a mixture of carbon nanotubes and nano-metals is used as the conductive material within the pores. Optionally, the proportion of carbon nanotubes in the conductive paste is greater than or equal to 3% and less than or equal to 10%. Exemplarily, the proportion of carbon nanotubes in the conductive paste is 3%, 4%, 5%, 6%, 7%, 8%, 9%, or 10%. Alternatively, the conductive paste further includes nickel rods, i.e., a mixture of nickel rods and nano-metals is used as the conductive material within the pores. Optionally, the proportion of nickel rods in the conductive paste is 3%, 4%, 5%, 6%, 7%, 8%, 9%, or 10%.

[0031] Step S130: Place the substrate in an electric field or magnetic field, so that the conductive paste moves under the action of the electric field or magnetic field to fill the holes.

[0032] For example, such as Figure 2c As shown, the magnetic field includes a first magnetic field 410. The conductive paste 20 is magnetic. The substrate 10 is placed in the first magnetic field 410, causing the conductive paste 20 to move under the action of the first magnetic field 410 to fill the hole 101. Because the conductive paste is magnetic, under the action of the first magnetic field 410, the magnetic material in the conductive paste is subjected to repulsive or attractive forces, resulting in directional movement (e.g., movement into the hole). Optionally, the strength of the first magnetic field 410 is greater than or equal to 0.1 T. Exemplarily, the strength of the first magnetic field 410 is 0.1 T, 0.2 T, 0.3 T, 0.5 T, 0.7 T, 1 T, etc. For example, in the case of a hole diameter of 20 µm and a substrate thickness of 500 µm, the required strength of the first magnetic field 410 is greater than 0.1 T. It is understandable that the strength of the first magnetic field 410 can be reasonably adjusted for substrates of different thicknesses and holes of different diameters to select the optimal filling speed. In actual design, it is necessary to consider factors such as magnetic pole geometry optimization (e.g., tapered pole heads) and superparamagnetic particle surface modification. In the embodiments of this application, the first magnetic field 410 is constructed by magnets (e.g., neodymium iron boron magnets, samarium cobalt magnets, etc.), and the strength of the magnetic field can be adjusted by the distance between the magnets. Alternatively, the first magnetic field 410 is constructed by an electromagnetic coil, and the strength of the magnetic field can be adjusted by controlling the current flowing through the electromagnetic coil. Alternatively, the first magnetic field 410 is constructed by both magnets and an electromagnetic coil; in this case, the strength of the magnetic field can be adjusted by either the distance between the magnets or by controlling the current flowing through the electromagnetic coil.

[0033] In this embodiment, the conductive paste is magnetic, which may be due to the inclusion of magnetic molecules. That is, magnetic molecules are incorporated into the conductive paste to make it magnetic. Optionally, the magnetic molecules include at least one of nano-nickel-iron alloy, nano-iron-cobalt alloy, nano-iron-nickel-cobalt alloy, nano-ferric oxide, nano-ferric oxide, nano-cobalt tetroxide, nano-cobalt tetroxide, nano-manganese tetroxide, and nano-nickel tetroxide. Optionally, the proportion of magnetic molecules in the conductive paste is greater than or equal to 10% and less than or equal to 25%. Optionally, the proportion of magnetic molecules in the conductive paste is 10%, 15%, 20%, or 25%. This ensures that the conductive paste is magnetic without affecting the conductivity of the nano-metals.

[0034] Optionally, the conductive paste is magnetic, and the nano-metal can also be magnetic particles. That is, the nano-metal is magnetized to make it weakly magnetic. Optionally, before the step of depositing the conductive paste on the first surface 110 (e.g., before step S120), the conductive paste is placed in a second magnetic field to make the nano-metal in the conductive paste magnetic. Alternatively, before preparing the nano-metal into a conductive paste, the nano-metal is placed in a second magnetic field to make it magnetic; the magnetic nano-metal is then made into a conductive paste. In the embodiments of this application, the strength of the second magnetic field is greater than or equal to 0.2 T and less than or equal to 0.5 T. Exemplarily, the strength of the second magnetic field is 0.2 T, 0.3 T, 0.4 T, or 0.5 T. Under this magnetic field strength, the nano-metal can be magnetized.

[0035] Optionally, such as Figure 2d As shown, the substrate 10 is placed in an electric field 420, causing the conductive paste 20 to move under the action of the electric field 420 to fill the hole 101. After energization, the electric field 420 can create a potential difference, and the conductive particles can move directionally under the action of the potential difference. Optionally, the strength of the electric field 420 is greater than or equal to 5 × 10⁻⁶. 8 V / m and less than or equal to 6 × 10 8 V / m. For example, the strength of the electric field 420 is 5 × 10⁻⁶ V / m. 8 V / m, 5.2×10 8 V / m, 5.4×10 8 V / m, 5.6×10 8 V / m, 5.8×10 8 V / m, 6×10 8 V / m. It is understandable that the intensity of the electric field 420 can be reasonably adjusted for substrates of different thicknesses and holes of different diameters in order to select the optimal filling speed.

[0036] Step S140: The substrate is subjected to high-temperature curing treatment to obtain the adapter board.

[0037] Optionally, the substrate is moved to a high-temperature oven for high-temperature curing, where the conductive paste inside the holes solidifies to form conductive pillars. Optionally, the high-temperature curing temperature is greater than or equal to 85°C and less than or equal to 200°C. For example, the high-temperature curing temperatures are 85°C, 100°C, 130°C, 150°C, 170°C, and 200°C. Optionally, the high-temperature curing time is greater than or equal to 10 minutes and less than or equal to 30 minutes. For example, the high-temperature curing times are 10 minutes, 20 minutes, and 30 minutes.

[0038] Optionally, after high-temperature curing, residues may remain on the substrate. For example, conductive material that has not filled the holes on the first surface 110 of the substrate, or conductive material that has overflowed from the holes on the second surface 120 of the substrate. Therefore, it is necessary to remove the residues from the substrate. Laser or grinding processes can be used to remove the residues. Figure 2e As shown, the substrate is polished using a chemical mechanical polishing tool 40 to remove residual substances, resulting in the following: Figure 2f The adapter plate 100 shown includes conductive posts 201.

[0039] In the embodiments of this application, the nano-metal moves directionally under the action of a magnetic field or electric field, guiding the conductive paste to fill the through holes, which can avoid the formation of central voids, improve the filling quality of the adapter plate, and the conductive paste has a faster filling speed under the action of an electric field or magnetic field, thus improving production efficiency; eliminating the electroplating process can greatly reduce production costs.

[0040] exist Figure 1 In the embodiment shown in Figure 2, the holes on the substrate 10 are through holes. In some embodiments, if the holes on the substrate are blind holes, the technical solution of this application can also be adopted. Specifically, as shown below... Figure 3 As shown.

[0041] Figure 3 This is a schematic flowchart of a method for preparing an adapter plate according to another embodiment of this application. Figures 4a to 4e This is a schematic diagram of the fabrication method of the adapter plate provided in another embodiment of this application. Figure 3 As shown, the method includes the following steps.

[0042] Step S310: At least one hole is formed on the first surface 110 of the substrate.

[0043] Optionally, such as Figure 4a As shown, at least one hole 102 is provided on the substrate 10, and the hole 102 includes a blind hole. For more details on forming holes on the substrate, please refer to [reference needed]. Figure 1 This will not be elaborated upon here.

[0044] Step S320: Deposit conductive paste on the first surface 110 such that the conductive paste covers the hole.

[0045] Optionally, a conductive paste is sprayed onto the first surface 110 using inkjet printing technology, so that the conductive paste covers the holes. For example... Figure 4b As shown, the inkjet printer nozzle 30 sprays conductive paste 20 onto the first surface 110, and the conductive paste 20 covers the first surface 110 and the holes 102. For a more detailed description of step S320, please refer to step S120, which will not be repeated here.

[0046] Step S330: The substrate is placed in an electric field or magnetic field and under vacuum conditions, so that the conductive paste moves under the action of the electric field or magnetic field to fill the hole.

[0047] Because the vias are blind vias, air needs to be expelled during filling to allow for better filling of the conductive paste. Therefore, the substrate needs to be placed under vacuum conditions and in an electric or magnetic field, causing the conductive paste to move under the influence of the field to fill the vias. For example, in... Figure 4c In this example, using a magnetic field, the substrate 10 is placed under vacuum conditions and within a first magnetic field 410. The conductive paste 20 moves under the influence of the first magnetic field 410 to fill the hole 102. Optionally, the vacuum level is greater than or equal to 5 Torr and less than or equal to 100 Torr. Exemplarily, the vacuum level is 5 Torr, 10 Torr, 20 Torr, 30 Torr, 40 Torr, 50 Torr, 60 Torr, 70 Torr, 80 Torr, 90 Torr, or 100 Torr. It is understood that vacuum conditions can further assist the movement of the conductive paste and accelerate the filling rate. In some cases, the conductive paste can fill the hole even without vacuuming; this embodiment also applies to situations where vacuuming is not required.

[0048] Step S340: Perform high-temperature curing treatment on the substrate.

[0049] Optionally, the step of high-temperature curing the substrate can be referred to Figure 1 The description in the text will not be repeated here.

[0050] In step S350, the second surface 120 of the substrate is thinned to obtain the adapter plate.

[0051] Optionally, the method for preparing the adapter plate further includes: thinning the second surface 120 of the substrate 10 to convert the blind hole 102 into a through hole. Since there is residual cured material on the substrate, the method for preparing the adapter plate further includes: removing the residual material from the substrate. Figure 4d As shown, the first surface 110 and / or the second surface 120 of the substrate 10 are polished using a chemical mechanical polishing tool 40. The substrate 10 can be thinned first and then the residual material removed; alternatively, the residual material can be removed first, and then the substrate 10 can be thinned to obtain the desired result. Figure 4e The adapter plate 100 shown includes conductive posts 201. This application does not limit the scope of the embodiments.

[0052] In the embodiments of this application, the nano-metal moves directionally under the action of a magnetic field or electric field, guiding the conductive paste to fill the blind holes, which can avoid the formation of central voids, improve the filling quality of the adapter plate, and the conductive paste has a faster filling speed under the action of the field, thus improving production efficiency; eliminating the electroplating process can greatly reduce production costs; in addition, placing the substrate under vacuum conditions can remove the gas in the holes, accelerate the filling speed of the conductive paste, and further improve production efficiency.

[0053] This application also provides a method for preparing an adapter plate, which is prepared according to the method described above. Figure 2f or Figure 4e As shown, the adapter plate 100 includes at least one hole filled with a conductive post 201. The material of the conductive post 201 includes a nano-metal. Optionally, the nano-metal includes at least one of nano-silver, nano-copper, nano-metals, and bismuth alloys.

[0054] Optionally, the coefficient of thermal expansion of the nanometal is greater than or equal to 0.4 ppm / K and less than or equal to 13 ppm / K, preferably greater than or equal to 0.4 ppm / K and less than or equal to 5 ppm / K. For example, the coefficient of thermal expansion of the nanometal is 0.4 ppm / K, 1 ppm / K, 3 ppm / K, 5 ppm / K, 10 ppm / K, 13 ppm / K, etc. In practical applications of the adapter board, the coefficient of thermal expansion of the nanometal is well matched with that of silicon (typically 2.5 ppm / K), which can effectively reduce the impact of thermal stress on the adapter board and chip connection, and improve the stability and reliability of the chip packaging structure under different temperature environments. At the same time, the good conductivity of the nanometal can also ensure the efficiency and stability of the adapter board when transmitting electrical signals, reducing losses and interference during signal transmission.

[0055] Optionally, the maximum current density of the nanometal is greater than 107 A / cm. 2 For example, the maximum current density of nanometals is 110 A / cm². 2 120 A / cm 2 140 A / cm 2 150 A / cm 2 200A / cm 2 The maximum current density of nanometals is greater than that of copper (typically less than 100 A / cm). 2 This can reduce electromigration and stress migration during long-term use.

[0056] In this embodiment, the thickness of the adapter plate is greater than or equal to 100 µm and less than or equal to 500 µm. Exemplarily, the thickness of the adapter plate is 100 µm, 200 µm, 300 µm, 400 µm, or 500 µm. Optionally, the hole includes a through hole. Optionally, the diameter of the hole is greater than or equal to 5 µm and less than or equal to 100 µm. Exemplarily, the diameter of the hole is 5 µm, 10 µm, 20 µm, 30 µm, 40 µm, 50 µm, 60 µm, 70 µm, 80 µm, 90 µm, or 100 µm.

[0057] In some embodiments, if a magnetic field environment is used during the fabrication of the adapter plate, magnetic molecules may be added to the conductive paste. After high-temperature curing, the magnetic molecules remain within the pores. In the embodiments of this application, the material of the conductive pillars further includes magnetic molecules, and the mass ratio of magnetic molecules to nano-metal is greater than or equal to 1 / 8 and less than or equal to 5 / 12. Exemplarily, the mass ratio of magnetic molecules to nano-metal is 1 / 8, 1 / 4, 1 / 3, or 5 / 12.

[0058] In some embodiments, when preparing the conductive paste, both nano-metals and carbon nanotubes can be used simultaneously. After high-temperature curing, the pores are filled with both nano-metals and carbon nanotubes, meaning the material of the conductive pillars also includes carbon nanotubes. The mass ratio of carbon nanotubes to nano-metals is greater than or equal to 3 / 80 and less than or equal to 1 / 6. Exemplarily, the mass ratio of carbon nanotubes to nano-metals is 3 / 80, 1 / 20, 1 / 10, 1 / 8, or 1 / 6. Alternatively, when preparing the conductive paste, both nickel rods and nano-metals can be used simultaneously. After high-temperature curing, the pores are filled with both nickel rods and nano-metals, meaning the material of the conductive pillars also includes nickel rods. The mass ratio of nickel rods to nano-metals is greater than or equal to 3 / 80 and less than or equal to 1 / 6. Exemplarily, the mass ratio of nickel rods to nano-metals is 3 / 80, 1 / 20, 1 / 10, 1 / 8, or 1 / 6.

[0059] This application also provides a chip packaging structure, which includes the aforementioned adapter board.

[0060] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0061] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0062] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0063] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0064] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

[0065] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A method for preparing an adapter plate, characterized in that, include: At least one hole is formed on the first surface of the substrate; A conductive paste is deposited on the first surface such that the conductive paste covers the pores, the conductive paste comprising nano-metals; The substrate is placed in an electric field or a magnetic field, causing the conductive paste to move under the influence of the electric field or magnetic field to fill the holes; The substrate is subjected to high-temperature curing to obtain the adapter board.

2. The method for preparing the adapter plate according to claim 1, characterized in that, The conductive paste is magnetic, the magnetic field includes a first magnetic field, and the step of placing the substrate in an electric or magnetic field, causing the conductive paste to move under the action of the electric or magnetic field to fill the holes, includes: The substrate is placed in the first magnetic field, causing the conductive paste to move under the action of the first magnetic field to fill the hole; Preferably, the strength of the first magnetic field is greater than or equal to 0.1 T; Preferably, the first magnetic field is constructed by a magnet; or, the first magnetic field is constructed by an electromagnetic coil; or, the first magnetic field is constructed by both a magnet and an electromagnetic coil.

3. The method for preparing the adapter plate according to claim 2, characterized in that, The conductive paste comprises magnetic molecules; Preferably, the magnetic molecules include at least one of the following: nano-nickel-iron alloy, nano-iron-cobalt alloy, nano-iron-nickel-cobalt alloy, nano-ferric oxide, nano-ferric oxide, nano-cobalt tetraoxonate, nano-manganese tetraoxonate, and nano-nickel tetraoxonate. Preferably, the proportion of the nano-metal in the conductive paste is greater than or equal to 60% and less than or equal to 80%; Preferably, the magnetic molecules account for more than or equal to 10% and less than or equal to 25% of the conductive paste.

4. The method for preparing the adapter plate according to claim 2, characterized in that, The nano-metal is a magnetic particle; Preferably, before the step of depositing the conductive paste on the first surface, the method for preparing the adapter plate further includes: placing the conductive paste in a second magnetic field, so that the nano-metal in the conductive paste becomes magnetic; or, the method for preparing the adapter plate further includes: placing the nano-metal in a second magnetic field, so that the nano-metal becomes magnetic; and making the magnetic nano-metal into the conductive paste; Preferably, the strength of the second magnetic field is greater than or equal to 0.2 T and less than or equal to 0.5 T.

5. The method for preparing the adapter plate according to claim 1, characterized in that, The step of placing the substrate in an electric or magnetic field, causing the conductive paste to move under the influence of the electric or magnetic field to fill the holes, includes: The substrate is placed in the electric field, causing the conductive paste to move under the action of the electric field to fill the holes; Preferably, the strength of the electric field is greater than or equal to 5 × 10⁻⁶. 8 V / m and less than or equal to 6 × 10 8 V / m.

6. The method for preparing the adapter plate according to claim 1, characterized in that, The hole includes a blind hole. After the step of performing high-temperature curing treatment on the substrate, the method for preparing the adapter plate further includes: thinning the second surface of the substrate to make the blind hole a through hole, and the second surface and the first surface are disposed opposite to each other. Preferably, placing the substrate in an electric or magnetic field, causing the conductive paste to move under the influence of the electric or magnetic field to fill the hole, includes: placing the substrate in the electric or magnetic field and placing the substrate under vacuum conditions, causing the conductive paste to move under the influence of the electric or magnetic field to fill the hole; Preferably, the vacuum condition has a vacuum level greater than or equal to 5 Torr and less than or equal to 100 Torr.

7. The method for preparing the adapter plate according to claim 1, characterized in that, The proportion of the nano-metal in the conductive paste is greater than or equal to 60% and less than or equal to 80%; Preferably, the particle size of the nano-metal is greater than or equal to 1 nm and less than or equal to 100 nm; Preferably, the nano-metal includes one or more of the following: nano-silver, nano-copper, nano-gold, and aluminum alloy; Preferably, the viscosity of the conductive paste is greater than or equal to 30 cps and less than or equal to 5000 cps; Preferably, the conductive paste further includes carbon nanotubes, wherein the carbon nanotubes account for more than or equal to 3% and less than or equal to 10% of the conductive paste; or, the conductive paste further includes nickel rods, wherein the nickel rods account for more than or equal to 3% and less than or equal to 10% of the conductive paste. Preferably, depositing conductive paste on the first surface includes: spraying conductive paste onto the first surface using an inkjet printing process, such that the conductive paste covers the hole; Preferably, the high-temperature curing treatment of the substrate includes: moving the substrate into a high-temperature oven and performing a high-temperature curing treatment on the substrate; Preferably, the temperature of the high-temperature curing treatment is greater than or equal to 85°C and less than or equal to 200°C, and the time of the high-temperature curing treatment is greater than or equal to 15 min and less than or equal to 30 min. Preferably, after the step of performing high-temperature curing on the substrate, the method for preparing the adapter plate further includes: removing residual substances from the substrate; Preferably, the residual material on the substrate is removed using a laser or grinding process; Preferably, before the step of forming at least one hole on the first surface of the substrate, the method for preparing the adapter plate further includes cleaning the substrate; The diameter of the hole is greater than or equal to 5 µm and less than or equal to 100 µm; Preferably, the hole includes a through hole.

8. An adapter board, characterized in that, The adapter plate includes at least one hole filled with a conductive pillar, the conductive pillar being made of a nanomaterial, and the adapter plate is prepared according to any one of claims 1 to 7.

9. The adapter board according to claim 8, characterized in that, The nanometals include at least one of the following: nanosilver, nanocopper, nanometals, and bismuth alloys; Preferably, the coefficient of thermal expansion of the nano-metal is greater than or equal to 0.4 ppm / K and less than or equal to 13 ppm / K; Preferably, the maximum current density of the nanometal is greater than 107 A / cm. 2 ; Preferably, the material of the conductive pillar further includes magnetic molecules, and the mass ratio of the magnetic molecules to the nano-metal is greater than or equal to 1 / 8 and less than or equal to 5 / 12; Preferably, the material of the conductive pillar further includes carbon nanotubes or nickel rods; the mass ratio of the carbon nanotubes to the nano-metal is greater than or equal to 3 / 80 and less than or equal to 1 / 6; or, the material of the conductive pillar further includes nickel rods, the mass ratio of the nickel rods to the nano-metal is greater than or equal to 3 / 80 and less than or equal to 1 / 6. Preferably, the thickness of the adapter plate is greater than or equal to 100 µm and less than or equal to 500 µm; Preferably, the diameter of the hole is greater than or equal to 5 µm and less than or equal to 100 µm; Preferably, the hole includes a through hole.

10. A chip packaging structure, characterized in that, Includes the adapter plate as described in claim 8 or 9.

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