Substrate processing apparatus

By providing gas permeation prevention protrusions and vent holes on the guide ring of the substrate processing apparatus, the problem of localized plasma caused by the gap between the clamping ring and the guide ring is solved, thereby achieving uniformity in substrate processing and protection of components.

CN121621049APending Publication Date: 2026-03-06PSK HLDG INC
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Patent Information

Application Number
CN202480049534.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-07-28
Filing Date
2024-07-01
Publication Date
2026-03-06

AI Technical Summary

Technical Problem

During substrate processing, the gap between the clamping ring and the guide ring causes gas infiltration, generating localized plasma, which damages the substrate and internal components of the cavity, and leads to uneven processing.

Method used

By setting gas permeation prevention protrusions and vent holes on the guide ring, gas permeation into the gap between the clamping ring and the guide ring is prevented, and the permeated gas is discharged, thus blocking the generation of local plasma.

Benefits of technology

It effectively prevents damage to the substrate and internal components of the cavity caused by localized plasma, ensuring the uniformity and reliability of substrate processing.

✦ Generated by Eureka AI based on patent content.

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Abstract

Disclosed is a substrate processing apparatus which can prevent damage to a substrate and components inside a chamber due to local plasma by preventing gas from permeating into a gap between a clamp ring and a guide ring, and can make processing of the substrate uniform. A substrate processing apparatus according to an embodiment of the present invention may comprise: a support part configured to support a substrate; a clamp ring that prevents bending deformation of the substrate in a processing process of the substrate by applying a load to an outer peripheral region of the substrate; and a guide ring provided on a peripheral portion of the support portion to guide the substrate and the clamp ring. The guide ring includes: a guide ring body having a ring shape corresponding to the clamp ring; and a gas permeation prevention protrusion part which is formed by protruding upward from the outer peripheral edge part of the guide ring body so as to prevent gas from permeating into a gap between the guide ring and the clamp ring when the substrate is warped.
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Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that can prevent damage to the substrate and internal components of the cavity caused by localized plasma by preventing gas from penetrating into the gap between the clamping ring and the guide ring.

[0002] This invention was derived from research conducted as part of the Small and Medium Enterprises Technology Innovation Development Project of the Ministry of Small and Medium Enterprises of Korea (Project No.: 1425167087, Specific Project No.: S3300781, Research Project Title: Plasma Processing Device for Fan-Out Semiconductor Packaging, Supervising Agency: PSK Holdings Co., Ltd., Research Period: June 24, 2022 to December 31, 2022). Background Technology

[0003] Typically, semiconductor integrated circuits are very small and thin silicon chips, but they are composed of various electronic components. A semiconductor chip undergoes various manufacturing processes before leaving the factory, including photolithography, etching, deposition, reflow soldering, and packaging. As various materials are deposited on semiconductor substrates such as wafers, warpage may occur due to factors such as differing thermal expansion efficiencies. This warpage varies depending on the wafer material (e.g., silicon, glass).

[0004] As mentioned above, when plasma processing is performed on a wafer that is bent or deformed, localized plasma is generated on the lower surface of the wafer, which may damage the wafer and components. To prevent this, the wafer can be bent or deformed by placing a clamping ring, called a window clamp, at the periphery of the wafer and applying a clamping load to the periphery of the wafer through the clamping ring.

[0005] The cavity used for plasma processing contains a chuck for placing the substrate and a guide ring mounted on the edge of the chuck for guiding the substrate. When warping occurs on a rigid substrate, even pressing the substrate with the load of the clamping ring may not completely suppress the warping. Therefore, if a gap is created between the contact surfaces of the clamping ring and the guide ring, gas can permeate into the gap between the clamping ring and the guide ring, generating localized plasma on the underside of the substrate, thereby damaging the substrate and components inside the cavity. Furthermore, localized plasma is a major cause of uneven processing at the edge areas of the substrate. Summary of the Invention

[0006] The problem the invention aims to solve The present invention provides a substrate processing apparatus that prevents damage to the substrate and internal components of the cavity caused by localized plasma by preventing gas from penetrating into the gap between the clamping ring and the guide ring, and enables uniform substrate processing.

[0007] In addition, the present invention provides a substrate processing apparatus that discharges gas that has permeated into the gap between the clamping ring and the guide ring through an exhaust hole provided in the guide ring, thereby preventing localized plasma caused by gas permeation.

[0008] In addition, the present invention provides a substrate processing apparatus that prevents the substrate from being damaged by localized plasma generated by gas infiltration by preventing gas that permeates into the gap between the clamping ring and the guide ring from being transmitted to the substrate side.

[0009] means for solving problems According to an embodiment of the present invention, a substrate processing apparatus may include: a support portion configured to support a substrate; a clamping ring for preventing the substrate from bending or deforming during the substrate processing by applying a load to the outer peripheral region of the substrate; and a guide ring disposed at the periphery of the support portion to guide the substrate and the clamping ring.

[0010] The guide ring may include: a guide ring body having a ring shape corresponding to the clamping ring; and a gas permeation prevention protrusion formed from the outer periphery of the guide ring body upward to prevent gas from permeating into the gap between the guide ring and the clamping ring when the substrate warps.

[0011] The guide ring may further include: a substrate support portion disposed on the inner side of the guide ring body to support the outer periphery of the substrate; a clamping ring guide portion disposed on the upper surface of the guide ring body located outside the substrate support portion with a shape corresponding to the bottom surface of the clamping ring to align the position of the clamping ring; and a clamping ring outer periphery support portion disposed on the upper region side of the guide ring body in a manner that protrudes outward in a radial direction from the outer side of the guide ring body to support the outer periphery of the clamping ring.

[0012] The gas permeation prevention protrusion can be configured to protrude upward from the outer peripheral support of the clamping ring and wrap around the outer side of the clamping ring in a ring shape.

[0013] The outer peripheral support portion of the clamping ring may have an inclined outer surface of the guide ring, which is formed by protruding obliquely from the upper surface of the clamping ring guide portion.

[0014] The outer inclined surface of the guide ring can be formed to correspond to the inclined guide surface provided on the outer peripheral portion of the clamping ring.

[0015] The substrate processing apparatus according to an embodiment of the present invention may further include an exhaust port formed through the guide ring and communicating with a pumping port, so as to discharge the permeated gas flowing between the clamping ring and the guide ring through the pumping port.

[0016] The substrate processing apparatus according to an embodiment of the present invention may further include an annular sealing member disposed on the contact surface between the clamping ring and the guide ring to block the permeation gas flowing into the space between the clamping ring and the guide ring from being transmitted to the substrate.

[0017] The substrate processing apparatus according to an embodiment of the present invention may further include a substrate clamping device configured to apply pressure to the periphery of the substrate by means of the clamping ring.

[0018] The substrate clamping device may include: a clamping ring driving part for lifting and lowering the clamping ring; and a damping part for dispersing the load applied to the substrate by the clamping ring due to the lowering drive of the clamping ring driving part.

[0019] The damping part may include: a clamping guide part, which is combined with the clamping ring driving part and is raised and lowered by the clamping ring driving part, and a damping groove is provided at the upper end of the clamping guide part; a damping member, which is combined with the clamping guide part and driven integrally, and the damping member is disposed inside the damping groove; and a damping guide part, which is inserted into the damping groove and disposed at the lower part of the damping member, and when the clamping ring driving part is driven to descend, the damping guide part applies pressure to the clamping ring by dispersing the pressure applied by the damping member.

[0020] The damping guide portion may include: a sliding portion having a first inner diameter; and an engaging portion having a second inner diameter larger than the first inner diameter to form a step with the sliding portion.

[0021] The damping component may include: a damping shaft having a length in the vertical direction, the lower end of the damping shaft being fixedly connected to the clamp guide portion; a pressure-applying body being connected to the upper end of the damping shaft and sliding along the inner circumferential surface of the damping guide portion, the pressure-applying body having a stepped portion that matches the engaging portion; and a spring being configured to wrap around the outer circumferential surface of the damping shaft and disposed between the pressure-applying body and the bottom surface of the damping groove to buffer the lifting and lowering of the pressure-applying body.

[0022] The guide ring may include a guide protrusion that is spaced apart from the inner circumferential surface of the guide ring and protrudes from the upper surface of the guide ring.

[0023] A guide groove may be provided on the lower surface of the clamping ring, and the guide groove can contact the upper surface of the guide protrusion.

[0024] The gas permeation prevention protrusion can be formed from the upper surface of the guide ring, protruding upwards at a height higher than the guide protrusion.

[0025] The clamping ring may include: a ring-shaped clamping ring body; and a connecting piece that protrudes from the outer peripheral surface of the clamping ring body in a radial direction.

[0026] The connecting piece may be provided with an insertion hole, and the damping guide part can be inserted into the insertion hole.

[0027] The connecting piece can be configured to be disposed between the upper surface of the clamp guide and the engaging portion of the damping guide, such that the clamping ring applies a distributed load to the substrate.

[0028] Invention Effects According to an embodiment of the present invention, a substrate processing apparatus is provided, which can prevent damage to the substrate and internal components of the cavity caused by localized plasma by preventing gas penetration through the gap between the clamping ring and the guide ring, and can make the substrate processing uniform.

[0029] Furthermore, according to an embodiment of the present invention, the gas that has permeated into the gap between the clamping ring and the guide ring is discharged, and the permeated gas cannot be transmitted to the substrate side, thereby preventing the generation of local plasma and damage to the substrate caused by gas permeation.

[0030] Furthermore, the effects achievable by the present invention are not limited to those mentioned above. Those skilled in the art should clearly understand from the following description other effects not mentioned above. Attached Figure Description

[0031] Figure 1This is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 2 This is a cross-sectional view of the clamping ring constituting a substrate processing apparatus according to an embodiment of the present invention.

[0033] Figure 3 This is a perspective view of the guide ring constituting a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 4 This is a cross-sectional view of the guide ring constituting a substrate processing apparatus according to an embodiment of the present invention.

[0035] Figure 5 yes Figure 1 The enlarged view of part "A" is a diagram used to illustrate the function of the guide ring according to an embodiment of the present invention.

[0036] Figure 6 and Figure 7 This is a cross-sectional view of the guide ring constituting a substrate processing apparatus according to another embodiment of the present invention.

[0037] Figure 8 This is a perspective view of a substrate clamping device constituting a substrate processing apparatus according to an embodiment of the present invention.

[0038] Figure 9 This is a cross-sectional view of a substrate clamping device constituting a substrate processing apparatus according to an embodiment of the present invention.

[0039] Figure 10 yes Figure 9 An enlarged view of section "B" shown.

[0040] Figure 11 This is a cross-sectional view of a substrate processing apparatus including a substrate clamping device according to an embodiment of the present invention.

[0041] Figure 12 It is shown Figure 11 A cross-sectional view of the first embodiment shown in section "C".

[0042] Figure 13 It is shown Figure 11 A cross-sectional view of the second embodiment shown in section "C".

[0043] Figure 14 It is shown Figure 11 A cross-sectional view of the third embodiment shown in section "C".

[0044] Figure 15 This is a configuration diagram of the control system constituting the substrate processing apparatus according to an embodiment of the present invention. Detailed Implementation

[0045] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as limited to the following embodiments. These embodiments are provided to provide a more complete explanation of the present invention to those skilled in the art. Therefore, the shapes of elements in the drawings are exaggerated for emphasis and clearer illustration. The invention is described in detail below with reference to the preferred embodiments and accompanying drawings to clearly define the structure of the invention as a solution to the problem to be solved by the present invention. Regarding the assignment of reference numerals to the constituent elements in the drawings, the same reference numerals may be assigned to the same constituent elements even if they exist in different drawings, and it is stated in advance that, when describing the current drawings, constituent elements of other drawings may be referenced as necessary.

[0046] According to an embodiment of the present invention, the substrate processing apparatus prevents gas from penetrating into the gap between the clamping ring and the guide ring, which is provided to prevent warping (bending deformation) of the substrate, by improving the shape of the guide ring. This prevents damage to the substrate and components inside the cavity caused by localized plasma, and ensures processing uniformity in the edge region of the substrate. To this end, the guide ring of the substrate processing apparatus according to an embodiment of the present invention includes: a ring-shaped guide ring body; and a gas penetration prevention protrusion that protrudes upward along the outer periphery of the guide ring body and surrounds the outer periphery of the clamping ring.

[0047] Figure 1 This is a schematic cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention. (Refer to...) Figure 1 According to an embodiment of the present invention, the substrate processing apparatus 100 is an apparatus for performing a process for processing a substrate 10. The substrate processing apparatus 100 can be various types of apparatus for performing processes on the substrate 10. The substrate processing apparatus 100 can be an apparatus for performing processes such as plasma processing, packaging, reflow, etching, deposition, photolithography, or thermal processing. The substrate 10 processed by the substrate processing apparatus 100 can be a semiconductor wafer, a mask, a glass substrate, or a liquid crystal display (LCD) panel, but is not limited thereto.

[0048] The substrate processing apparatus 100 according to an embodiment of the present invention may include a support portion 110, a processing portion 120, and a guide ring 200 disposed within a chamber 100a. The chamber 100a has a processing space for processing a substrate 10. Depending on the type of substrate processing process performed in the substrate processing apparatus 100, various components required for processing the substrate 10 may be disposed within the chamber 100a.

[0049] For example, if the substrate processing apparatus 100 is an apparatus that uses plasma to process the substrate 10, it may be provided with: a configuration for providing process gas for generating plasma into the processing space of the cavity 100a; a configuration for converting process gas into plasma (e.g., a high-frequency generator); and a component for discharging process gas and plasma from inside the processing space.

[0050] The support portion 110 is configured to support the substrate 10. As an example, the support portion 110 may include a support chuck such as an electrostatic chuck for supporting the bottom surface (lower surface) of the substrate 10, but is not limited thereto. The support portion 110 may be insulated by an insulator 112. An exhaust ring 113 for uniformly discharging process gases may be provided inside the cavity 100a. The process gases within the cavity 100a may be discharged from the exhaust ring 113 via a pumping port (not shown) located at the lower part of the exhaust ring 113.

[0051] The processing unit 120 is configured to perform the aforementioned substrate processing process on the substrate 10. For example, it may include: a high-frequency generator for generating and controlling plasma; a high-frequency controller; a heater for heating the substrate 10, etc. Although not shown, a plurality of lift pins may be provided on the support unit 110. Although not shown, a plurality of lift pins may be provided on the support unit 110. As is well known, the lift pins are devices for raising and lowering the substrate 10. They are configured to be able to transfer the substrate 10 and the clamping ring 20 from the end effector hand and lower the substrate 10 and the clamping ring 20 onto the support unit 110, and to raise the processed substrate 10 and the clamping ring 20 from the support unit 110 and transfer them to the end effector hand. The substrate 10 and the clamping ring 20 are moved into the cavity 100a via the inlet 100b by the end effector hand of the substrate handling robot for performing the substrate processing process. Alternatively, the clamping ring 20 may not be moved into the end effector hand along with the substrate, and may also be configured to be movable within the cavity 100a.

[0052] When the substrate 10 and clamping ring 20 are lifted by multiple lifting pins, the substrate 10 and clamping ring 20 are removed from the cavity 100a by the end effector hand. Afterwards, a new substrate for subsequent processing is reinserted into the cavity 100a by the end effector hand, thus enabling the substrate processing process to be repeated. To enable the multiple lifting pins to perform lifting actions, multiple lifting slots (not shown) can be provided in the support portion 110. The lifting pins can perform lifting operations through the lifting slots provided in the support portion 110.

[0053] The upper end of the lifting pin can be raised or lowered between a height below and above the upper surface of the support 110. The lifting pin can be driven to rise or fall by a drive unit (not shown). The drive unit may include: a drive motor for driving the raising and lowering of multiple lifting pins; a drive cylinder for driving the raising and lowering by the drive motor, etc. The drive unit can be implemented to drive multiple lifting pins in a coordinated manner, or to drive each of the multiple lifting pins individually.

[0054] A guide ring 200 may be provided around the support portion 110. The guide ring 200 can control the flow of process gas on the substrate 10 in a manner that enables uniform process processing of the substrate 10, while guiding the configuration and alignment of the substrate 10 and the clamping ring 20. The guide ring 200 is provided in the outer peripheral region of the support portion 110 and can be designed to have a shape corresponding to the bottom surface and outer surface of the clamping ring 20.

[0055] Figure 2 This is a cross-sectional view of the clamping ring constituting a substrate processing apparatus according to an embodiment of the present invention. (Refer to...) Figure 1 and Figure 2 The clamping ring 20 according to one embodiment will be described. The clamping ring 20 can be designed to apply a load to the periphery of the substrate 10. The bending deformation (warping) of the substrate 10 mainly occurs in the outer peripheral region (edge ​​region) of the substrate 10 during the substrate processing process. Therefore, the clamping ring 20 can be set in a ring shape to apply pressure to the outer peripheral region of the substrate 10 in order to suppress the warping of the substrate 10.

[0056] Therefore, the inner diameter of the clamping ring 20 can be designed to be close to the outer diameter of the substrate 10, and can be formed into a ring shape extending radially outward from the inner diameter of the clamping ring 20. That is, the inner periphery of the clamping ring 20 can have a smaller size than the outer periphery of the substrate 10, and the outer periphery of the clamping ring 20 can have a size greater than or equal to the outer periphery of the substrate 10. The clamping ring 20 can be configured to be concentric with the center of the substrate 10. In one embodiment, although the clamping ring 20 can be designed as a circular ring, the shape of the clamping ring 20 can be deformed into a rectangular ring or other shapes depending on the shape of the substrate 10.

[0057] The center portion of the clamping ring 20 can be configured as an annular shape with an opening to supply process gas to the substrate 10. An inclined opening surface 24 can be formed on the inner surface of the clamping ring body 21 of the clamping ring 20 to facilitate the smooth supply of process gas to the upper surface of the substrate 10. A pressure ring 22, protruding from the clamping ring body 21, can be provided on the inner side of the bottom portion of the clamping ring 20, and this pressure ring 22 is used to apply pressure to the upper surface of the substrate 10. The bottom surface 22a of the pressure ring 22 can be supported on the upper surface of the outer periphery of the substrate 10. Therefore, pressure can be applied to the outer peripheral region of the substrate 10 by the load of the clamping ring 20.

[0058] A bottom protrusion 23 may be provided on the bottom surface of the clamping ring body 21, extending radially outward toward the outside of the pressure ring 22. The bottom protrusion 23 may be formed protruding from the bottom surface of the clamping ring 20. The bottom protrusion 23 may include: an inner inclined surface 23a, inclinedly disposed from the bottom surface 22a of the pressure ring 22; an outer inclined surface 23b, inclinedly disposed from the bottom surface 21a of the clamping ring body 21; and a bottom surface 23c, which is a flat surface between the inner inclined surface 23a and the outer inclined surface 23b. The width T1 in the vertical direction between the bottom surface 22a of the pressure ring 22 and the bottom surface 23c of the bottom protrusion 23 (i.e., the vertical protrusion thickness of the bottom protrusion 23) may be designed to be the same as the thickness of the substrate 10, so that a portion of the outer periphery of the substrate 10, which has not warped, can be supported on the upper surface of the guide ring 200. In order to achieve stable alignment of the clamping ring 20, an inclined guide surface 25 can be formed between the bottom surface 21a and the outer surface 21b of the clamping ring body 21.

[0059] Figure 3 This is a perspective view of the guide ring constituting a substrate processing apparatus according to an embodiment of the present invention. Figure 4 This is a cross-sectional view of the guide ring constituting a substrate processing apparatus according to an embodiment of the present invention. (Refer to...) Figures 1 to 4 The guide ring 200 may include: a guide ring body 210 having a ring shape corresponding to the clamping ring 20; a substrate support portion 220 disposed on the inner side of the guide ring body 210 to support the outer periphery of the substrate 10; a clamping ring guide portion 230 disposed on the upper surface of the guide ring body 210 located outside the substrate support portion 220 with a shape corresponding to the bottom surface of the clamping ring 20 to align the position of the clamping ring 20; a clamping ring outer periphery support portion 240 disposed on the upper region side of the guide ring body 210 in a manner that protrudes outward in the radial direction from the outer side 212 of the guide ring body 210 to support the outer periphery of the clamping ring 20; and a gas permeation prevention protrusion 250 configured to protrude upward from the clamping ring outer periphery support portion 240 and wrap around the outer side 21b of the clamping ring 20.

[0060] The upper surface 222 of the substrate support 220 can be designed to have the same height as the upper surface of the support 110. The clamping ring guide 230 can have a guide surface 232 that protrudes obliquely from the upper surface 222 of the substrate support 220. The guide surface 232 can be formed at the same angle as the outer oblique surface 23b of the clamping ring 20. The guide surface 232 can guide the position of the bottom protrusion 23 of the clamping ring 20. Based on the upper surface 222 of the substrate support 220, the clamping ring guide 230 can be formed to protrude with the same thickness as the bottom protrusion 23 of the clamping ring 20.

[0061] The clamping ring outer peripheral support portion 240 may have a guide ring outer inclined surface 242, which is formed by obliquely protruding from the upper surface of the clamping ring guide portion 230. The guide ring outer inclined surface 242 may be formed in a shape corresponding to the inclined guide surface 25 provided on the outer peripheral portion of the clamping ring 20. The guide ring outer inclined surface 242 can serve to align the position of the clamping ring 20 by guiding the inclined guide surface 25 of the clamping ring 20. The gas permeation prevention protrusion 250 may be configured to protrude upward along the outer peripheral edge of the guide ring body 210 and wrap around the outer peripheral edge of the clamping ring 20. In the case where the peripheral edge of the substrate 10 is warped, the upper surface of the gas permeation prevention protrusion 250 may be configured to be positioned higher than the lowermost end of the outer surface 21b of the clamping ring 20.

[0062] Figure 5 yes Figure 1 The enlarged view of part "A" is a diagram used to illustrate the function of the guide ring according to an embodiment of the present invention. Figure 5 The diagram illustrates a warped state of substrate 10. The clamping ring 20 can alleviate warping of substrate 10 by applying a load to its periphery. When substrate 10 warps excessively, the load from the clamping ring 20 alone is insufficient to completely suppress warping. While using a heavier clamping ring 20 could completely prevent warping, it could also cause damage such as substrate 10 breakage. Therefore, using a clamping ring 20 with excessive load capacity may be limiting.

[0063] According to an embodiment of the present invention, even if the clamping ring 20 is lifted from the upper surface of the guide ring body 210 and the clamping ring guide portion 230 of the guide ring 200 due to the warping of the substrate 10, the gas permeation prevention protrusion 250 will still cover the outer side surface 21b of the clamping ring 20, thereby preventing process gas from flowing into the gap space 30 between the clamping ring 20 and the guide ring 200. Therefore, it is possible to prevent process gas from flowing into the gap space 30 between the clamping ring 20 and the guide ring 200 and generating localized plasma, and to prevent substrate damage caused by localized plasma.

[0064] Therefore, the inner surface of the gas permeation prevention protrusion 250 can be set to have the same size as the outer diameter of the clamping ring 20 within an allowable error (e.g., hundreds of μm to 1 mm). Based on the upper surface of the clamping ring guide 230, the protrusion height of the gas permeation prevention protrusion 250 can be designed to take into account the warping of the substrate 10, and can be designed to be a height of several mm to several cm (e.g., 1 mm to 10 cm).

[0065] Furthermore, according to an embodiment of the present invention, an outer inclined surface 242 of the guide ring is provided on the outer peripheral support portion 240 of the clamping ring. This minimizes the space between the clamping ring 20 and the guide ring 200, reduces the amount of gas permeation between the clamping ring 20 and the guide ring 200, and minimizes localized plasma caused by the stagnation of permeating gas. The edge portion of the upper end face of the gas permeation prevention protrusion 250 is chamfered, thereby preventing the guide ring 200 from breaking when the clamping ring 20 is placed. The edge portion of the clamping ring 20 is formed as an inclined surface, allowing it to slide on the outer inclined surface 242 of the guide ring, thus enabling the clamping ring 20 to be placed concentrically with the center of the chuck of the support portion 110. Additionally, the clamping ring 20 can be placed on the chuck without being jammed by the guide surface 232 of the guide ring 200. The substrate processing apparatus according to an embodiment of the present invention can improve localized plasma without changing the etching amount and uniformity.

[0066] Figure 6 and Figure 7 This is a cross-sectional view of a guide ring constituting a substrate processing apparatus according to another embodiment of the present invention. (Refer to...) Figure 6 and Figure 7 The guide ring 200 may be provided with an exhaust hole 260 to discharge the gas flowing between the clamping ring 20 and the guide ring 200, and an annular sealing member 270 may be provided at the part of the bottom protrusion 23 of the clamping ring 20 that contacts the clamping ring guide portion 230 of the guide ring 200.

[0067] The vent 260 extends from the upper surface of the clamping ring guide 230 toward the outer side 212 of the guide ring body 210. The permeation gas 40 flowing between the clamping ring 20 and the guide ring 200 can be drawn in by a pumping port provided in the cavity and discharged through the vent 260.

[0068] The annular sealing member 270 can be disposed on the contact surface between the clamping ring 20 and the guide ring 200 by a sealing member engaging groove 23d disposed on the bottom surface of the clamping ring 20 and a sealing member engaging groove 224 disposed on the upper surface of the guide ring 200. The annular sealing member 270 can be configured as an elastic O-ring or the like.

[0069] Even if the clamping ring 20 is lifted due to the warping of the substrate 10, the annular sealing member 270 can block the permeation gas 40 flowing into the space 30 between the clamping ring 20 and the guide ring 200 from being transmitted to the substrate 10 side, thereby preventing the substrate 10 from being damaged by localized plasma.

[0070] Figure 8 This is a perspective view of a substrate clamping device constituting a substrate processing apparatus according to an embodiment of the present invention. Figure 9 This is a cross-sectional view of a substrate clamping device constituting a substrate processing apparatus according to an embodiment of the present invention. Figure 10 yes Figure 9 An enlarged view of section "B" shown. (Refer to...) Figures 8 to 10 The substrate clamping device can prevent warpage of substrates 1 and 10 by applying pressure to the peripheral area of ​​substrates 1 and 10. The substrate clamping device may include a clamping ring 2000, a clamping ring drive unit 3000, and a damping unit 4000.

[0071] Support portions 110 and 1000 are configured to support substrates 1 and 10. Support portions 110 and 1000 may include a guide ring 1100. The guide ring 1100 has an annular shape and provides guidance for placing the substrate 1. Specifically, the guide ring 1100 may include guide protrusions 1110, which protrude from the upper surface of the guide ring 1100. Multiple guide protrusions 1110 may be provided at predetermined intervals (angles) along the peripheral direction of the guide ring 1100.

[0072] Substrates 1 and 10 can be placed on guide ring 1100. Specifically, the outer peripheral regions of substrates 1 and 10 can be placed in a first region S1, which is a region close to the inner peripheral surface of guide ring 1100 with reference to guide protrusion 1110. Therefore, substrates 1 and 10 can be stably supported in the correct position, and uniform pressure can be applied to the peripheral regions of substrates 1 and 10 along the peripheral direction by clamping ring 2000.

[0073] The clamping ring 2000 can apply a load to the outer peripheral area of ​​the substrates 1 and 10, thereby preventing the substrates 1 and 10 from bending or deforming during the substrate processing. The clamping ring 2000 may include a clamping ring body 2100 and a connecting piece 2200. The clamping ring body 2100 is annular in shape, and a guide groove 2110 may be provided on the lower surface of the clamping ring body 2100. The guide groove 2110 is formed in a shape corresponding to the guide protrusion 1110, and can be formed in a manner that corresponds to the upper surface of the guide protrusion 1110. Therefore, the clamping ring 2000 matches the guide ring 1100, thereby suppressing the misalignment of the clamping ring 2000 and improving the efficiency of the substrate processing.

[0074] In addition, in the clamping ring body 2100, the thickness T1 of the first region S1 near the inner peripheral surface with reference to the guide protrusion 1110 is formed to be thinner than the thickness T2 of the second region S2 near the outer peripheral surface in the vertical direction, thereby allowing the substrates 1 and 10 to be placed between the guide ring 1100 and the clamping ring 2000.

[0075] For example, the thickness T1 in the vertical direction of the first region S1 of the clamping ring 2000 can be formed to be less than the thickness T2 in the vertical direction of the second region S2 by an amount less than the thickness of the substrate 1. Therefore, the peripheral region of the substrate 1 can be accurately positioned in the first region S1 of the guide ring 1100, thereby being pressed by the clamping ring without misalignment.

[0076] The connecting piece 2200 protrudes radially from the outer peripheral surface of the clamping ring body 2100, and an insertion hole may be provided in the connecting piece 2200. The connecting piece 2200 may be configured to prevent gas permeation from the outer side of the guide ring 1100, thus preventing interference with the protrusion. The number of connecting pieces 2200 may be the same as the number of damping portions 4000. In the illustrated embodiment, four connecting pieces 2200 are provided on the outer peripheral surface of the clamping ring body 2100, but the number of connecting pieces 2200 can be varied. The damping portion 4000 is inserted into the insertion hole, thereby dispersing the pressure applied to the substrates 1 and 10 by the clamping ring 2000. This will be described in detail later.

[0077] The drive unit 3000 can raise and lower the clamping ring 2000. Specifically, the clamping ring drive unit 3000 may include at least three drive frames 3100 and an actuator 3200, and the actuator 3200 can bring the drive frames 3100 in and out. When the drive frame 3100 is brought in by the actuator 3200, the clamping ring 2000 descends, thereby bringing the lower surface of the inner diameter portion of the clamping ring 2000 into contact with the upper surface of the substrates 1 and 10; when the drive frame 3100 is brought out by the actuator 3200, the clamping ring 2000 rises, thereby separating the lower surface of the inner diameter portion of the clamping ring 2000 from the upper surface of the substrates 1 and 10 and the guide ring 1100.

[0078] In the outer peripheral portion of the guide ring 1100, a gas permeation prevention protrusion 1150 may be provided in the outer peripheral support portion 1140 of the clamping ring. When a space is created between the clamping ring 2000 and the guide ring 1100 due to warping of the substrates 1 and 10, the gas permeation prevention protrusion 1150 can prevent gas from permeating into the gap between the clamping ring 2000 and the guide ring 1100 by covering the outer surface of the clamping ring 2000. The gas permeation prevention protrusion 1150 can be formed by protruding from the upper surface of the guide ring 1100 towards the upper part above the height of the guide protrusion 1110.

[0079] Figure 11 This is a cross-sectional view of a substrate processing apparatus including a substrate clamping device according to an embodiment of the present invention. Figure 12 It is shown Figure 11 The diagram shows a cross-sectional view of the first embodiment of section "C". According to the first embodiment of the invention, the damping portion 4000 can distribute the load applied to the substrates 1 and 10 by the clamping ring 2000 due to the descent of the drive portion 3000. The damping portion 4000 may include a clamp guide portion 4100, a damping member 4200, and a damping guide portion 4300.

[0080] The clamp guide 4100 can be coupled to the clamping ring drive 3000 and raised or lowered via the clamping ring drive 3000. When the clamp guide 4100 rises via the clamping ring drive 3000, the lower surface of the clamping ring 2000 is supported and rises by the clamp guide 4100. When the clamp guide 4100 descends, the clamping ring 2000 can be positioned on the upper part of the clamp guide 4100. A damping groove 4101 can be formed at the upper end of the clamp guide 4100. The damping groove 4101 can have an open shape on its upper surface.

[0081] The damping member 4200 is integrated with and driven integrally with the clamp guide 4100. The damping member 4200 can be disposed inside the damping groove 4101. The damping member 4200 can be made of an elastic material or a non-elastic material. When the damping member 4200 is made of an elastic material, the load applied to the substrate 1 can be distributed by the buffering effect of the damping member 4200.

[0082] The damping member 4200 may include a damping shaft 4210 and a pressure-applying body 4220. The damping shaft 4210 has a length in the vertical direction, and its lower end can be fixedly coupled to the clamp guide 4100. The pressure-applying body 4220 is coupled to the upper end of the damping shaft 4210 and can slide along the inner circumferential surface of the damping guide 4300. Specifically, the pressure-applying body 4220 may include a stepped portion 4221 and a pressure-applying body 4222. A detailed description of this will be given later along with the description of the damping guide 4300.

[0083] The damping guide 4300 can be inserted into the damping groove 4101 and disposed at the lower part of the damping member 4200. It can be configured to distribute the pressure applied by the damping member 4200 to the clamping ring 2000 during the descent drive of the clamping ring drive 3000. Specifically, the damping guide 4300 may include a sliding part 4310 and a engaging part 4320. The sliding part 4310 has a cylindrical shape with an opening at its upper part and can be formed with a first inner diameter D1. In this case, the first inner diameter D1 can be designed to be the same as the diameter of the damping groove 4101. Therefore, the sliding part 4310 can be inserted into the damping groove 4101 and move up and down together with it as the clamping guide 4100 moves. A connecting hole can be formed on the lower surface of the sliding part 4310, into which the damping shaft 4210 is inserted.

[0084] The engaging portion 4320 is formed on the upper part of the sliding portion 4310 and may have a second inner diameter D2 larger than the first inner diameter D1, thereby forming a step with the sliding portion 4310. The engaging portion 4320 may be formed to match the stepped portion 4221 of the pressure-applying body 4220, thereby applying pressure to the damping guide portion 4300 when the clamp guide portion 4100, which is fixedly connected to the damping member 4200, descends. In other words, when the clamp guide portion 4100 descends, the damping member 4200 may be driven to descend together with the clamp guide portion 4100. The damping guide portion 4300 is disposed between the clamp guide portion 4100 and the pressure-applying body 4220 and may match the stepped portion 4221 of the pressure-applying body 4220 and be driven to descend together with it.

[0085] At this time, the connecting piece 2200 can be disposed between the engaging portion 4320 of the clamp guide portion 4100 and the damping guide portion 4300, and the damping guide portion 4300 can be inserted into the insertion hole provided in the connecting piece 2200. Therefore, the load applied to the substrates 1 and 10 by the clamping ring 2000 due to the descent of the clamping ring drive portion 3000 can be dispersed by the damping portion 4000. In addition, the outer peripheral surface of the damping guide portion 4300 has a shape corresponding to the inner peripheral surface of the clamp guide portion 4100, so that the damping guide portion 4300 can slide stably downward along the inner peripheral surface of the clamp guide portion 4100 when the clamp guide portion 4100 is lowered.

[0086] Figure 13 It is shown Figure 11 A cross-sectional view of the second embodiment shown in section "C". (Compared to...) Figure 12 Compared to the damping member 4200 of the first embodiment of the present invention shown, the damping member 4200 of the second embodiment of the present invention differs in the structure of the spring 4230. Therefore, only the different configurations will be described below, and the description of repeated reference numerals for the same configuration will be omitted.

[0087] The damping member 4200 may also include a spring 4230. The spring 4230 may be disposed between the pressure-applying body 4220 and the bottom surface of the damping groove 4101, thereby buffering the rise and fall of the pressure-applying body 4220. For example, when the damping guide 4300 applies a load to the substrate 1 as the damping member 4200 descends, the spring 4230 will be compressed, thereby buffering the load applied to the substrates 1 and 10. Alternatively, the spring 4230 may be configured to surround the outer peripheral surface of the damping shaft 4210, but is not limited thereto.

[0088] Figure 14 It is shown Figure 11 A cross-sectional view of the third embodiment shown in section "C". (Compared to...) Figure 12 Compared to the damping portion 4000 of the second embodiment of the present invention shown, the damping portion 4000 of the second embodiment of the present invention differs in the structure of the clamp guide portion 4100 and the damping member 4200. Therefore, only the different configurations will be described below, and the description of repeated reference numerals for the same configuration will be omitted.

[0089] The clamp guide 4100 has a loading / unloading groove 4102 at the lower part of the damping groove 4101, and the inner circumferential surface of the loading / unloading groove 4102 may have a threaded portion 4110. A threaded engagement portion 4211 that can threadedly engage with the threaded portion 4110 may be provided on the outer circumferential surface of the damping shaft 4210. Therefore, the damping member 4200 can be detachably attached to the clamp guide 4100.

[0090] For example, a clamping ring 2000 is disposed on the upper part of the clamp guide 4100, and the insertion hole formed in the connecting piece 2200 is configured to communicate with the damping groove 4101 of the clamp guide 4100. A damping member 4200 and a damping guide 4300 are disposed inside the damping groove 4101. The damping guide 4300 can be inserted into the damping groove 4101 and slide.

[0091] At this time, the threaded portion 4211 and the threaded engagement portion 4110 can be threaded together. The threaded portion 4211 is formed on the outer peripheral surface of the damping shaft 4210 of the damping guide portion 4300, and the threaded engagement portion 4110 is formed in the loading and unloading groove 4102 provided at the lower end of the damping groove 4101. Therefore, the clamping ring 2000, the clamping guide portion 4100, and the damping member 4200 can be engaged and disengaged from each other, thereby facilitating maintenance and repair.

[0092] Figure 15 This is a configuration diagram of a control system constituting a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus may further include a measuring unit 5000 and a control unit 6000. The measuring unit 5000 can measure the pressure applied by the clamping ring drive unit 3000. The measuring unit 5000 may be a pressure sensor that directly measures the pressure applied to the substrates 1 and 10. For example, similar to that used in touch panels, if the pressure is applied, the pressure position and pressure can be detected.

[0093] The control unit 6000 can control the driving force of the clamping ring drive unit 3000 based on the applied pressure measured by the measuring unit 5000. When the measured applied pressure is greater than a preset value, the drive frame 3100 is pulled out; when the measured applied pressure is less than the preset value, the drive frame 3100 is pulled in. The preset value is an applied pressure value set to prevent bending deformation of the substrates 1 and 10 during the substrate processing process based on the physical properties of the substrate, and it can be determined by a corresponding table, etc.

[0094] The above detailed description is an example of the present invention. Furthermore, the above content describes preferred embodiments of the present invention. The present invention can be used in various combinations, modifications, and environments. That is, changes or modifications can be made to the concept and scope of the invention disclosed in this specification, to the equivalent scope of the written disclosure, and / or to the scope of technology or knowledge in the art. The written embodiments illustrate the optimal state for implementing the technical idea of ​​the present invention, and various required modifications can be made to the specific application field and use of the invention. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Furthermore, the appended claims should be interpreted as including other embodiments.

Claims

1. A substrate processing apparatus characterized by comprising: Comprising: a support portion configured to support a substrate; a clamping ring configured to prevent the substrate from being deformed by bending during a process of the substrate by applying a load to an outer peripheral region of the substrate; and a guide ring provided to a peripheral portion of the support portion to guide the substrate and the clamping ring, the guide ring comprising: a guide ring body having a ring shape corresponding to the clamping ring; and a gas permeation prevention protrusion portion protruding upward from an outer peripheral portion of the guide ring body to prevent gas from permeating into a gap between the guide ring and the clamping ring when the substrate is warped.

2. The substrate processing apparatus according to claim 1, wherein the guide ring further comprises: a substrate support portion provided to an inner side surface of the guide ring body to support an outer peripheral side of the substrate; a clamping ring guide portion provided to an upper surface of the guide ring body on an outer side of the substrate support portion in a shape corresponding to a bottom surface of the clamping ring to align a position of the clamping ring; and a clamping ring outer peripheral support portion provided to an upper region side of the guide ring body in a manner protruding outward in a radial direction from an outer side surface of the guide ring body to support an outer peripheral portion of the clamping ring, the gas permeation prevention protrusion portion is provided to protrude upward from the clamping ring outer peripheral support portion and wrap an outer side surface of the clamping ring in a ring shape.

3. The substrate processing apparatus according to claim 2, wherein the clamping ring outer peripheral support portion has a guide ring outer side inclined surface protruding obliquely from an upper surface of the clamping ring guide portion, the guide ring outer side inclined surface is formed in a shape corresponding to an inclined guide surface provided to the outer peripheral portion of the clamping ring.

4. The substrate processing apparatus according to claim 1, further comprising an exhaust hole formed through the guide ring and communicating with a pumping port to exhaust permeated gas flowing into a gap between the clamping ring and the guide ring via the pumping port.

5. The substrate processing apparatus according to claim 1, further comprising a ring-shaped sealing member provided to a contact surface between the clamping ring and the guide ring to block permeated gas flowing into a gap between the clamping ring and the guide ring from being transmitted to the substrate.

6. The substrate processing apparatus according to claim 1, further comprising a substrate clamping device configured to press the clamping ring against a peripheral portion of the substrate, the substrate clamping device comprising: a clamping ring driving portion configured to lift and lower the clamping ring; and a damping portion configured to disperse a load applied to the substrate by the clamping ring due to lowering of the clamping ring by the clamping ring driving portion.

7. The substrate processing apparatus according to claim 6, wherein the damping portion comprises: a jig guide portion combined with the clamping ring driving portion and lifted and lowered by the clamping ring driving portion, the jig guide portion having a damping groove provided to an upper end portion thereof; a damping member combined with and integrally driven with the jig guide portion, the damping member being provided to an inside of the damping groove; and ​ ​ ​ ​ ​ A damping guide portion is inserted into the damping groove and provided at a lower portion of the damping member, and when the clamping ring driving portion is driven to descend, the damping guide portion exerts pressure on the clamping ring by dispersing the pressure of the damping member.

8. The substrate processing apparatus according to claim 7, wherein The damping guide portion includes: a sliding portion having a first inner diameter; and a fitting portion having a second inner diameter larger than the first inner diameter to form a step with the sliding portion.

9. The substrate processing apparatus according to claim 8, wherein The damping member includes: a damping shaft having a length in the up-down direction, a lower end of the damping shaft being fixedly coupled to the clamp guide portion; a pressure-exerting body coupled to an upper end of the damping shaft and sliding along an inner circumferential surface of the damping guide portion, a stepped portion being formed in the pressure-exerting body to fit with the fitting portion; and a spring disposed to wrap an outer circumferential surface of the damping shaft and arranged between the pressure-exerting body and a bottom surface of the damping groove to cushion the pressure-exerting body from rising and falling.

10. The substrate processing apparatus according to claim 8, wherein The guide ring includes a guide protrusion spaced apart from an inner circumferential surface of the guide ring and protruding from an upper surface of the guide ring, a guide groove is provided at a lower surface of the clamping ring, the guide groove being capable of being in surface contact with an upper surface of the guide protrusion, the gas permeation prevention protruding portion is formed to protrude from the upper surface of the guide ring to an upper portion higher than a height of the guide protrusion.

11. The substrate processing apparatus according to claim 10, wherein The clamping ring includes: a circular ring-shaped clamping ring body; and a connecting piece protruding in a radial direction from an outer circumferential surface of the clamping ring body, an insertion hole is provided at the connecting piece, the damping guide portion being capable of being inserted into the insertion hole.

12. The substrate processing apparatus according to claim 11, wherein The connecting piece is arranged between the upper surface of the clamp guide portion and the fitting portion of the damping guide portion, such that the clamping ring exerts the dispersed load on the substrate.