Sputtering equipment

Abstract

The invention provides sputtering equipment. The sputtering equipment comprises a cavity body and a containing chamber communicating with the interior of the cavity body. A bearing base, a collimator and a supporting piece are arranged in the chamber main body; the bearing base is used for bearing a wafer; the supporting piece is positioned above the bearing base and is used for supporting the collimator; the sputtering apparatus also includes a transfer arm that can support the collimator and is movable between the chamber body and the accommodation chamber. When the filling process is executed, the collimator is located above the bearing base and used for adjusting the target material particles so that the target material particles can fill the hole structure on the surface of the wafer. After filling of the hole structure is completed, the transmission arm can move the collimator from the chamber body to the accommodating chamber, and at the moment, the collimator is no longer located above the bearing base. And then the coating process can be continued. In the whole process, the wafer is always located in the cavity main body and does not need to move, so that the complex operation in the wafer moving process is avoided, and the production efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to a sputtering apparatus. Background Technology

[0002] Silicon carbide is a high-performance third-generation semiconductor material. Compared with first- and second-generation materials such as silicon and gallium arsenide, silicon carbide has advantages such as a large bandgap, high intrinsic temperature, high breakdown strength, high saturated electron drift velocity, and high bonding energy. It can meet the new requirements of modern electronic technology for harsh conditions such as high temperature, high power, high frequency, and high voltage, and is currently the most promising material in the semiconductor field.

[0003] With the rapid development of silicon carbide MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, the aspect ratio is becoming increasingly larger, placing higher demands on magnetron sputtering hot aluminum filling. The typical hot aluminum filling process temperature is around 450℃. When the temperature is below 450℃, the fluidity of Al is very poor, making it very easy to form voids in the holes, such as... Figure 1 As shown; when the temperature is above 450℃, although complete filling is possible, due to the high solid solubility of silicon atoms in aluminum at high temperatures, spiking easily forms at the aluminum-silicon interface, such as... Figure 2 As shown, either situation will result in device failure and product scrapping.

[0004] Existing technologies use collimators to improve the collimation of sputtered particles, compensating for the poor fluidity of aluminum at low temperatures and reducing void formation. However, using collimators reduces filling efficiency and affects production capacity.

[0005] Therefore, how to improve the production capacity of the hot aluminum chamber is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] This application aims to solve at least one of the technical problems existing in the prior art, and proposes a sputtering device that improves production efficiency.

[0007] To achieve the purpose of this application, a sputtering device is provided, including a chamber body and a receiving chamber communicating with the interior of the chamber body; the chamber body is provided with a support base, a collimator and a support member;

[0008] The support base is used to support the wafer;

[0009] The support member is located above the bearing base and is used to support the collimator;

[0010] The sputtering apparatus also includes a transfer arm for supporting the collimator and movable between the chamber body and the receiving chamber.

[0011] In some embodiments, a fixed shielding component, a movable shielding component, and a moving mechanism are also included;

[0012] The fixed shielding component is fixedly arranged around the bearing base;

[0013] The movable shielding component surrounds the bearing base and is movably disposed within the chamber body, used to cooperate with the fixed shielding component to protect the inner wall of the chamber body during the process;

[0014] The support member is disposed inside the movable shielding member;

[0015] The moving mechanism is connected to the movable shielding component and is used to move the movable shielding component away from or closer to the fixed shielding component.

[0016] The transmission arm is used to move between the chamber body and the receiving chamber when the movable shield moves away from the fixed shield.

[0017] In some embodiments, the moving mechanism includes a moving drive and a moving transmission member, wherein the moving drive drives the movable shield to move via the moving transmission member.

[0018] In some embodiments, the fixed shield is located above the movable shield, and the inner diameter of the top end of the movable shield is larger than the outer diameter of the bottom end of the fixed shield.

[0019] When the movable shielding component works in conjunction with the fixed shielding component to protect the inner wall of the chamber body, the movable shielding component and the fixed shielding component partially overlap in the vertical direction.

[0020] In some embodiments, a receiving mechanism is further included, which is used to carry the collimator close to the support to place the collimator on the support, or to carry the collimator away from the support.

[0021] In some embodiments, a shielding pressure ring is also included;

[0022] The shielding pressure ring overlaps the inner side of the movable shielding component and is used to overlap the outer edge of the bearing base when the bearing base is located in the process position.

[0023] In some embodiments, the receiving mechanism includes a pin and a lifting mechanism. The shielding ring has a through hole extending along the thickness direction. The pin passes through the through hole. The lifting mechanism is used to drive each pin to move up and down synchronously.

[0024] In some embodiments, the transmission arm includes:

[0025] A support member for supporting the collimator;

[0026] A swing frame includes a swing shaft and a swing arm, one end of which is fixedly connected to the swing shaft and the other end of which is fixedly connected to the support member;

[0027] A swing drive, connected to the swing shaft, is used to drive the swing shaft to rotate, thereby moving the swing arm between the chamber body and the receiving chamber.

[0028] In some embodiments, the carrier includes a support frame and a support portion;

[0029] The support frame has a receiving area for accommodating the collimator and a clearance opening for avoiding the pin. The support portion is connected to the support frame and extends into the receiving area to support the collimator.

[0030] In some embodiments, the ejector pin has a shielding plate with a diameter larger than that of the via, and the shielding plate covers the via during the process.

[0031] This application has the following beneficial effects:

[0032] During the filling process, the collimator is positioned above the support base to adjust the target particles, enabling them to fill the hole structures on the wafer surface. After the hole structures are filled, the transfer arm moves the collimator from the main chamber to the receiving chamber, at which point the collimator is no longer above the support base. The coating process can then proceed. Throughout the entire process, wafer transfer is not required by opening a cavity, avoiding the complex operations involved in wafer transfer and thus improving production efficiency. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the structure in which voids are formed on a wafer;

[0034] Figure 2 This is a schematic diagram of a puncture structure formed on a wafer;

[0035] Figure 3 This is a schematic diagram of the structure of a sputtering device provided in a specific embodiment of this application;

[0036] Figure 4 for Figure 3 A schematic diagram of the structure of the collimator supported by the middle load-bearing component;

[0037] Figure 5 for Figure 3 Top view of the middle shielding ring;

[0038] Figures 6a to 6hThis is a schematic diagram of the technological process.

[0039] in, Figures 1 to 6h The attached figures are labeled as follows:

[0040] 100. Target material; 200. Support base; 300. Collimator; 400. Transfer arm;

[0041] 410. Bearing component; 411. Support frame; 412. Support part; 420. Swing frame; 421. Swing arm; 422. Swing shaft; 430. Swing motor; 500. Fixed shielding component; 610. Movable shielding component; 620. Supporting component; 630. Overlapping ring; 640. Moving transmission component; 650. Moving motor; 700. Shielding pressure ring; 701. Through hole; 800. Receiving mechanism; 810. Ejector pin; 811. Baffle plate; 820. Lifting cylinder; 900. Receiving cavity. Detailed Implementation

[0042] To enable those skilled in the art to better understand the technical solution of this application, the sputtering device provided in this application will be described in detail below with reference to the accompanying drawings.

[0043] Existing technologies typically employ two chambers. A collimator is fixed in one chamber, where the wafer undergoes hole filling. After hole filling, a robotic arm or similar device removes the wafer and transfers it to the other chamber for coating. This wafer transfer process involves multiple operations, including pedestal lifting, chamber isolation valve operation, and robotic arm transfer, which impacts wafer processing efficiency.

[0044] The sputtering apparatus provided in this application includes a chamber body and a receiving chamber communicating with the interior of the chamber body. The chamber body contains a support base 200, a collimator 300, and a support member 620.

[0045] A target material 100 can be installed inside the main body of the chamber, such as Figure 3 As shown, the target 100 is positioned above the support base 200. The support base 200 is used to support the wafer, and the target 100 is used to sputter target particles onto the wafer on the support base 200. A support member 620 is located between the target 100 and the support base 200 and is used to support the collimator 300. During the processing, the target 100 sputters target particles onto the wafer on the support base 200 under ion bombardment. The collimator 300 is used to adjust the hole structure of the target particles filling the wafer surface during the fill process.

[0046] For example, the wafer fabrication process may include a filling process and a coating process. During the filling process, a collimator 300 is located between the target 100 and the support base 200. The collimator 300 has a through-hole that corresponds to the location of a hole structure on the wafer. Target particles can pass through the collimator and fall into the hole structure on the wafer, thereby completing the filling of the hole structure on the wafer surface.

[0047] Optionally, the receiving cavity 900 is disposed adjacent to the chamber body, and the receiving cavity 900 is used to receive the collimator 300 that is moved out from between the target 100 and the support base 200.

[0048] The sputtering apparatus also includes a transfer arm 400, which can support the collimator 300 and can move between the chamber body and the receiving cavity 900.

[0049] During the fill process, the transfer arm 400 moves the collimator 300 between the target 100 and the support base 200. After the fill process is complete, ions can stop bombarding the target 100, and the transfer arm 400 moves the collimator 300 out from between the target 100 and the support base 200, into the receiving cavity 900. The removed collimator 300 remains inside the cavity, so the cavity does not need to be opened during the entire processing. Subsequently, ions continue to bombard the target 100. Due to the absence of the collimator 300's obstruction, target particles can uniformly cover the wafer surface, completing the wafer surface coating. This process does not require opening the main chamber, saving the time consumed by opening and closing the isolation valve.

[0050] After the coating process is completed, the wafer inside the chamber is replaced, and the filling process is repeated. Before the filling process, the transfer arm 400 moves the collimator 300 between the target 100 and the support base 200, and then the filling process can be performed.

[0051] Optional, such as Figure 3 As shown, the receiving cavity 900 is arranged adjacent to the main chamber, and its internal space is sufficient to accommodate the collimator 300 and the movable collimator 300. Figure 3 In the specific embodiment shown, the height of the receiving cavity 900 is greater than the height of the collimator 300, but much smaller than the overall height of the cavity body. Compared to the prior art that uses two cavities to process wafers, the entire cavity provided in this embodiment occupies less space, thereby reducing the size of the sputtering equipment. Of course, users can also set the size of the receiving cavity 900 as needed, and this is not limited here.

[0052] In this embodiment, after the filling process is completed, the transfer arm 400 can move the collimator 300 out from between the target 100 and the support base 200, and then continue the coating process. Throughout the entire processing, the wafer does not need to be replaced in the cavity, avoiding processes such as opening and closing isolation valves and robotic wafer transfer, thus saving processing time. The technical solution of this application can increase production capacity by approximately 30%.

[0053] In some embodiments, the transmission arm 400 includes a carrier 410, a swing frame 420, and a swing drive. The carrier 410 is used to carry the collimator 300; the swing frame 420 includes a swing shaft 422 and a swing arm 421, one end of the swing arm 421 is fixedly connected to the swing shaft 422, and the other end is fixedly connected to the carrier 410; the swing drive is connected to the swing shaft 422 and is used to drive the swing shaft 422 to rotate, so as to move the collimator 300 out of the target 100 and the support base 200.

[0054] like Figure 3 As shown, the collimator 300 is positioned perpendicular to the axis of the chamber body. The swing shaft 422 extends axially along the chamber body, the swing arm 421 is perpendicular to the swing shaft 422, and the support member 410 is located at the end of the swing arm 421 away from the swing shaft 422, with the plane of the support member 410 also perpendicular to the swing shaft 422. The swing drive can specifically be a swing motor 430, which drives the swing shaft 422 to rotate, thereby causing the swing arm 421 to rotate around the swing shaft 422. During this process, the swing arm 421 can drive the support member 410 to swing between the target 100 and the support base 200, supporting the collimator 300 located between the target 100 and the support base 200. Subsequently, the target 100 and the support base 200 drive the swing shaft 422 to rotate, causing the swing arm 421 to swing towards the receiving cavity 900, thereby moving the collimator 300 into the receiving cavity 900. Conversely, before the filling process, the transfer arm 400 can move the collimator 300 from the receiving cavity 900 to between the target 100 and the support base 200 by swinging the swing arm 421. Of course, the structure of the transfer arm 400 is not limited to this. For example, the user can set a telescopic mechanism such as a cylinder to drive the support frame to move, thereby moving the collimator 300.

[0055] In some embodiments, the sputtering apparatus further includes a receiving mechanism 800 for receiving the collimator 300 when it moves between the target 100 and the support base 200, and when the collimator 300 is removed from between the target 100 and the support base 200.

[0056] Optional, such as Figure 3As shown, the receiving mechanism 800 is vertically and flexibly positioned within the cavity. After the collimator 300 moves between the target 100 and the support base 200, the receiving mechanism 800 can rise to receive the collimator 300. Subsequently, the support frame 411 can move away from between the target 100 and the support base 200 to avoid affecting the normal progress of the coating process. After the filling process is completed, the collimator 300 needs to be moved out from between the target 100 and the support base 200. At this time, the collimator 300 is supported by the receiving mechanism 800 in the main body of the cavity, and the transfer arm 400 moves the support member 410 below the collimator 300. Then, the receiving mechanism 800 descends, placing the collimator 300 on the support member 410, and the transfer arm 400 can move the collimator 300 out from between the target 100 and the support base 200.

[0057] In some embodiments, the sputtering apparatus further includes a fixed shield 500, a movable shield 610, and a moving mechanism. The fixed shield 500 is fixedly disposed around the support base 200. The movable shield 610 is disposed around the support base 200 and is movably disposed within the chamber body to cooperate with the fixed shield 500 in protecting the inner wall of the chamber body during the process. A support member 620 is disposed inside the movable shield 610 to support the collimator 300 when filling the hole structure of the wafer. The moving mechanism is connected to the movable shield 610 and is used to move the movable shield 610 away from or towards the fixed shield 500. A transfer arm 400 is used to move between the chamber body and the receiving chamber when the movable shield moves away from the fixed shield 500.

[0058] like Figure 3 As shown, both the fixed shield 500 and the movable shield 610 are arranged around the target 100. During the processing, the target 100 and the support base 200 are located inside the fixed shield 500 and the movable shield 610. The fixed shield 500 and the movable shield 610 can cooperate with each other to prevent the target particles from contacting the inner wall of the chamber body, thus protecting the inner wall of the chamber body.

[0059] Additionally, during the filling process, the collimator 300 is located inside the shielding component. Specifically, the support 620 is located inside the movable shielding component 610, and the support 620 can be used to support the collimator 300 during the filling process. After the filling process is completed, the collimator needs to be removed. At this time, the moving mechanism needs to move the movable shielding component 610 away from the fixed shielding component 500, so that a separation opening is formed between the movable shielding component 610 and the fixed shielding component 500. When the movable shielding component 610 moves downward, the receiving mechanism 800 receives and supports the collimator 300, so that the position of the collimator 300 corresponds to the separation opening. Subsequently, the transfer arm 400 catches the collimator 300 on the receiving mechanism 800 and moves the collimator 300 out of the separation opening. Then, the moving mechanism drives the movable shielding component 610 upward, so that it cooperates with the fixed shielding component 500, and the coating process continues.

[0060] After the coating process is completed, the wafer is replaced in the main chamber, and the filling process is repeated. Before the filling process, the moving mechanism needs to move the movable shield 610 away from the fixed shield 500, so that a separation port is formed between them again. The transfer arm 400 moves the collimator 300 from the separation port into the inside of the shield, and the receiving mechanism 800 receives the collimator 300 on the transfer arm 400. Then the transfer arm 400 moves out of the separation port. The moving mechanism then moves the movable shield 610 towards the fixed shield 500, so that the support 620 receives the collimator 300 on the receiving mechanism 800, and the movable shield 610 cooperates with the fixed shield 500 to protect the inner wall of the main chamber.

[0061] Optional, such as Figure 3 As shown, the inner diameter of the top of the movable shield 610 can be larger than the outer diameter of the bottom of the fixed shield 500. Therefore, the movable shield 610 can move upwards and fit around the outer periphery of the fixed shield. During the process, the target particles are sputtered downwards, and the movable shield 610, fitted around the outer periphery of the fixed shield 500, can prevent the target particles from passing through the gap between the movable shield 610 and the fixed shield 500 and falling onto the inner wall of the chamber body.

[0062] In some embodiments, the moving mechanism includes a moving drive and a moving transmission member 640, wherein the moving drive drives the movable shield 610 to move via the moving transmission member 640.

[0063] Optionally, the motion drive can be a motion motor 650, and the motion transmission component 640 can be a lead screw assembly. The motion transmission component 640 includes a moving nut and a moving lead screw. The moving lead screw is fixedly connected to the shaft of the motion motor 650, and the moving nut is fixedly connected to the movable shield 610. The motion motor 650 drives the moving lead screw to rotate, which in turn pushes the movable shield 610 to rise or fall via the moving nut. Of course, the motion mechanism can also use other methods to drive the movable shield 610 to rise or fall, such as a moving cylinder, etc., which are not limited here.

[0064] It should be noted that, Figure 3 In the specific embodiment shown, the movable shield 610 is connected to a moving mechanism. The user may also configure two or more moving mechanisms to drive the movable shield 610 up and down. Each moving mechanism is evenly distributed along the circumference of the movable shield 610 and operates synchronously when driving the movable shield 610 up and down. Two or more moving mechanisms can make the force on the movable shield 610 more even and the lifting process more stable.

[0065] In some embodiments, the sputtering apparatus further includes a carrier base 200 and a shielding ring 700. The carrier base 200 is used to carry the wafer, and the shielding ring 700 overlaps the inner side of the movable shield 610 to overlap the outer edge of the carrier base 200 during filling and coating processes.

[0066] During the filling and coating processes, the support base 200 needs to be raised to the process position. The lower end of the movable shield 610 has an overlapping ring 630 extending radially inward, and the outer edge of the shielding pressure ring 700 can overlap the overlapping ring 630. Figure 6b As shown, after the support base 200 rises to the process position, the inner ring of the shielding pressure ring 700 overlaps with the outer edge of the support base 200. A closed space is formed between the support base 200, the shielding pressure ring 700, the movable shielding component 610, the fixed shielding component 500, and the top of the chamber body. The target particle sputtering process takes place within this closed space, which can prevent the target particles from contacting the inner wall of the chamber body and protect the inner wall of the chamber body.

[0067] In some embodiments, the receiving mechanism 800 includes a pin 810 and a lifting mechanism. The shielding ring 700 has a through hole 701 extending along the thickness direction. The pin 810 passes through the through hole 701. The lifting mechanism is used to drive each pin 810 to rise and fall synchronously.

[0068] like Figure 3As shown, the ejector pin 810 passes through the through hole 701 on the shielding pressure ring 700 and enters the inner side of the movable shield 610. The lifting mechanism can specifically be a lifting cylinder 820, whose piston is connected to the ejector pin 810, used to drive the ejector pin 810 to rise and fall, thereby enabling the ejector pin 810 to support the collimator 300. Of course, the lifting mechanism can also adopt an electric cylinder, hydraulic cylinder, lead screw, etc., and is not limited here. The number of supporting mechanisms 800 is usually two or more, and each supporting mechanism 800 is evenly distributed along the circumference of the collimator 300, thereby stably supporting the collimator 300. Figure 5 In the specific embodiment shown, there are three receiving mechanisms 800. Users can also set the number of receiving mechanisms 800 as needed, which is not limited here.

[0069] Optional, such as Figure 4 As shown, the carrier 410 includes a support frame 411 and a support portion 412. The support frame 411 has a receiving area for accommodating the collimator 300 and a clearance opening for accommodating the pin 810. The support portion 412 is connected to the support frame 411 and extends into the receiving area to support the collimator 300.

[0070] Figure 4 In the specific embodiment shown, the support frame 411 is arc-shaped. Users can also set the support frame 411 to a rectangle or other shapes; this is not limited here. The radius of the arc of the support frame 411 is larger than the radius of the collimator 300. The inner side of the arc-shaped support frame 411 is a receiving area, and one side of the support frame 411 has a clearance opening. The width of the clearance opening is greater than or equal to the distance between the two ejector pins 810, so that the ejector pins 810 can leave the receiving area through the clearance opening. Specifically, after the ejector pins 810 pass upward through the receiving opening and receive the collimator 300, the transmission arm 400 swings towards the receiving cavity 900, and the ejector pins 810 separate from the support frame 411 at the clearance opening.

[0071] For example, there are three support parts 412, all of which are disposed inside the support frame 411 and extend radially toward the center of the support frame 411. The ends of the three support parts 412 furthest from the support frame 411 are located on a circumference whose diameter is smaller than the diameter of the collimator 300. The central angle between the two support parts 412 on either side of the clearance opening and the corresponding center angle of the support frame 411 is greater than 180°. Therefore, after the collimator 300 enters the receiving area, the three support parts 412 support the collimator 300, preventing it from tipping over. Of course, the number and distribution of the support parts 412 can be set according to user needs, as long as they can support the collimator 300; no limitation is made here.

[0072] In some embodiments, the ejector pin 810 has a shield 811, the diameter of which is larger than the diameter of the via 701, and the shield 811 covers the via 701 during the process.

[0073] When the receiving mechanism 800 supports the collimator 300, the blocking plate 811 contacts the collimator 300, thus supporting it. The blocking plate 811 has a relatively large diameter, which increases its contact area with the collimator 300, thereby improving the stability of the support. During the processing, the lifting cylinder 820 drives the ejector pin 810 to descend until the blocking plate 811 is in contact with the shielding pressure ring 700. Figure 5 As shown, the diameter of the shielding plate 811 is larger than the diameter of the via 701. Therefore, when the shielding plate 811 is attached to the shielding ring 700, it can completely cover the via 701, preventing sputtering particles generated during the process from passing through the via 701 and adhering to the inner wall of the chamber body, thereby better protecting the inner wall of the chamber body.

[0074] For example, such as Figure 6a As shown, before the filling process, the collimator 300 is placed on the support 620, and the carrier base 200 is located at the lower part of the chamber body. The wafer is placed onto the carrier base 200 by a robotic arm or other device. Figure 6b As shown, once the process begins, the support base 200 is raised to the process position, and then the filling process can be carried out through the collimator 300. Figure 6c As shown, after the hole structure on the wafer surface is filled, the support base 200 first descends to its initial position. Once the support base 200 reaches the designated position, as... Figure 6d As shown, the moving motor 650 drives the movable shield 610 and the shielding pressure ring 700 downwards, separating the movable shield 610 from the fixed shield 500. The width of the separation port between the movable shield 610 and the fixed shield 500 is greater than the height of the collimator 300, ensuring that the collimator 300 moves out of this separation port. The lifting cylinder 820 drives the ejector pin 810 upwards, lifting the collimator 300. Then, the swing motor 430, through the swing frame 420, drives the carrier 410 from the separation port into the space between the target 100 and the carrier base 200, receiving the collimator 300. Figure 6e As shown, after the swing arm receives the collimator 300, it swings outward to move the collimator 300 into the receiving cavity 900. The moving motor 650 drives the movable shield 610 and the shielding pressure ring 700 upward to a position that mates with the fixed shield 500. The lifting cylinder 820 drives the ejector pin 810 downward until it just covers the shielding pressure ring 700. Then, the support base 200 rises to the process position to begin the coating process without the collimator 300 until the process is completed. After the process is completed, as shown... Figure 6fAs shown, the process of moving the movable shield 610 downwards is repeated to separate the movable shield 610 from the fixed shield 500. Then, as... Figure 6g As shown, the ejector pin 810 moves upward, cooperating with the transfer arm 400 to move the collimator 300 between the target 100 and the support base 200. Figure 6h As shown, the movable shield 610 moves upward to support the collimator 300 and cooperates with the fixed shield 500 to protect the inner wall of the chamber body. The ejector pin 810 moves downward to cover the through hole 701 of the shielding ring 700, and the next wafer is ready to be fed into the wafer for processing.

[0075] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of this application, and this application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this application, and these modifications and improvements are also considered to be within the scope of protection of this application.

Claims

1. A sputtering apparatus characterized by comprising: The sputtering device comprises a chamber body and a containing chamber in communication with the chamber body; a bearing base, a collimator and a support are arranged in the chamber body; The bearing base is used for bearing a wafer; The support is located above the bearing base and is used for supporting the collimator; The sputtering device further comprises a transmission arm, which is used for supporting the collimator and can move between the chamber body and the containing chamber.

2. The sputtering apparatus according to claim 1, wherein Further comprising a fixed shield, a movable shield and a moving mechanism; The fixed shield is fixedly arranged around the bearing base; The movable shield is movably arranged in the chamber body around the bearing base and is used for protecting the inner wall of the chamber body together with the fixed shield during a process; The support is arranged inside the movable shield; The moving mechanism is connected with the movable shield and is used for driving the movable shield away from or close to the fixed shield; The transmission arm is used for moving between the chamber body and the containing chamber when the movable shield is away from the fixed shield.

3. The sputtering apparatus according to claim 2, wherein The moving mechanism comprises a moving drive and a moving transmission member, and the moving drive drives the movable shield to move through the moving transmission member.

4. The sputtering device according to claim 2, wherein The fixed shield is located above the movable shield, and the inner diameter of the top end of the movable shield is greater than the outer diameter of the bottom end of the fixed shield; When the movable shield protects the inner wall of the chamber body together with the fixed shield, the movable shield and the fixed shield partially overlap in the vertical direction.

5. The sputtering apparatus according to any one of claims 1 to 4, wherein Further comprising a receiving mechanism, which is used for bearing the collimator close to the support to place the collimator on the support or bearing the collimator away from the support.

6. The sputtering apparatus according to claim 5, wherein Further comprising a shielding compression ring; The shielding compression ring is lapped inside the movable shield and is used for lapping the outer edge of the bearing base when the bearing base is located at a process position.

7. The sputtering apparatus according to claim 6, wherein The receiving mechanism comprises a thimble and a lifting mechanism, the shielding compression ring has a through hole penetrating in the thickness direction, the thimble is arranged in the through hole, and the lifting mechanism is used for driving the thimbles to synchronously lift.

8. The sputtering apparatus according to claim 7, wherein The transmission arm comprises: A bearing member used for bearing the collimator; A swing frame comprising a swing shaft and a swing arm, one end of the swing arm is fixedly connected with the swing shaft, and the other end is fixedly connected with the bearing member; A swing drive connected with the swing shaft and used for driving the swing shaft to rotate to drive the swing arm to move between the chamber body and the containing chamber.

9. The sputtering apparatus according to claim 8, wherein The bearing member comprises a support frame and a support part; The support frame has a containing area used for containing the collimator and an avoiding opening used for avoiding the thimble, and the support part is connected with the support frame and extends to the containing area to support the collimator.

10. The sputtering apparatus according to claim 9, wherein The thimble has a shielding sheet, the diameter of the shielding sheet is greater than the diameter of the through hole, and the shielding sheet covers the through hole during a process.

Images