Instantaneous ionization effect laser simulation device based on light beam regulation and control
By using multi-wavelength nanosecond-femtosecond laser sources and beam shaping technology, the charge track distribution of lasers in semiconductor devices is controlled, solving the problems of track size deviation and energy distribution mismatch in laser simulation, and realizing high-precision simulation of transient ionization effects.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-20
- Publication Date
- 2026-03-10
AI Technical Summary
In existing technologies, pulsed laser simulations of transient ionization effects suffer from problems such as track size deviation, energy distribution mismatch, and limited spatial resolution, making it difficult to accurately reproduce charge sharing effects and multi-node flipping characteristics, thus affecting the accurate assessment of dose rate damage thresholds.
A multi-wavelength nanosecond-femtosecond laser source is used in conjunction with beam shaping and optical path adjustment to generate flat-top and Bessel beams. Closed-loop feedback control of laser parameters is achieved through a control, testing and monitoring system to regulate the charge track distribution of the laser in semiconductor devices.
It improves the accuracy of laser simulation, enabling precise simulation of dose rate effects and single-event effects, enhancing spatial resolution and realism, and supporting research on devices under radiation environments.
Smart Images
Figure CN121633759A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of radiation effects and radiation hardening technology for semiconductor devices and integrated circuits, specifically to a laser simulation device for transient ionization effects based on beam modulation, which is suitable for radiation performance evaluation and hardening design verification of electronic devices in aerospace, nuclear power and other scenarios. Background Technology
[0002] Transient ionization effects mainly encompass two types of radiation damage: dose rate effects and single-event effects. Dose rate effects refer to the phenomenon where, under high-dose-rate ionizing radiation, electronic devices generate a large number of transient charge carriers within semiconductor devices due to ionization. These charge carriers form transient photocurrents, which are collected and ultimately cause transient interference or even damage to the device's function or performance. Single-event effects refer to the phenomenon where high-energy particles in space bombard sensitive parts of semiconductor devices, generating additional charges through ionization, leading to unpredictable interference or failure. Both types of ionization effects are transient and pose a serious threat to electronic components in irradiated environments. Currently, assessing a device's resistance to transient ionization effects mainly relies on large-scale ground-based simulation experimental facilities such as pulsed accelerators and heavy-ion accelerators. However, these facilities have significant drawbacks, including high experimental costs, poor flexibility, and uncontrollable ionization tracks.
[0003] Pulsed laser simulation of transient ionization effects has become an effective supplement to the above evaluation schemes due to its advantages such as low cost and the ability to inject at specific points. However, the accuracy of the physical simulation using this technology still faces a series of problems, as follows: 1. Inaccurate simulation of single-event effect: The radial intensity of the Gaussian beam generated by pulsed laser decays exponentially, resulting in low central charge concentration and large track width (>2μm), which deviates significantly from the radial charge track (0.1-1μm) generated by heavy ions, making it difficult to accurately reproduce the charge sharing effect and multi-node flipping characteristics.
[0004] 2. Dose rate effect simulation distortion: The energy distribution of the Gaussian beam generated by the pulsed laser is too concentrated. The strong spatial localization of energy deposition produced by it contradicts the uniform ionization characteristics of the transient gamma rays, resulting in a mismatch in the spatial distribution of transient current and affecting the accurate assessment of the dose rate damage threshold.
[0005] 3. Limited single-point focusing capability: Due to the optical diffraction limit, the Gaussian beam diffraction limit results in limited focusing capability. The actual spot size is difficult to be smaller than 10 micrometers, and the focal area is concentrated, which can easily cause thermal effects and interfere with the real ionization damage signal.
[0006] 4. The single-photon absorption mechanism caused by nanosecond lasers has a small absorption coefficient and cannot simulate semiconductor devices with deep sensitive regions and large bandgap widths. Summary of the Invention
[0007] The application aims to provide a laser simulation device based on light beam regulation and transient ionization effect, so as to solve the problems of track size deviation, energy distribution mismatch and limited spatial resolution in laser simulation of high-energy particle induced transient ionization effect, and improve the accuracy of laser simulation.
[0008] To achieve the above-mentioned purpose, the application adopts the following technical solutions: A laser simulation device based on light beam regulation and transient ionization effect, comprising: a multi-wavelength nanosecond-femtosecond laser source, a light beam shaping and adjusting optical path, a control and test and monitoring system. The multi-wavelength nanosecond-femtosecond laser source is used to generate laser with pulse width range covering nanosecond to femtosecond and send it to the light beam shaping and adjusting optical path. The light beam shaping and adjusting optical path is used to perform beam splitting processing on the received incident light to obtain a first Gaussian beam and a second Gaussian beam, shape the first Gaussian beam into a flat-top beam, and shape the second Gaussian beam into a Bessel beam; in the process of shaping the above Gaussian beams into flat-top beams and Bessel beams, the laser beam is adjusted and guided to the device to be tested. The control and test and monitoring system comprises a control system, a test system and a monitoring system; the control system comprises a control unit and a laser switch unit controlled by the control unit; the test system comprises a displacement positioning unit for carrying and positioning the device to be tested; a signal acquisition unit cooperates with the displacement positioning unit to acquire the transient electrical response signal of the device to be tested; an observation unit is used to obtain the position information of the device to be tested; the control unit is connected with the signal acquisition unit, the observation unit and the monitoring system to receive the transient electrical response signal, the position information and the laser parameter information; the control unit is configured to: according to the laser parameter information, perform closed-loop feedback control on the laser parameter adjustment unit to stabilize the laser output; based on the transient electrical response signal and the position information, manage and control the control displacement positioning unit and the adjustment of laser parameter setting.
[0009] Further, the multi-wavelength nanosecond-femtosecond laser source is integrated with a parameter adjustment unit and a frequency doubling conversion module; the parameter adjustment unit is used to adjust the wavelength, repetition frequency and pulse width parameters of the laser according to application requirements, and the frequency doubling conversion module is used to convert the wavelength of the laser.
[0010] Further, the light beam shaping and adjusting optical path comprises a common input optical path, a first optical path, a second optical path and a common output optical path. The common input light path comprises a strong attenuation sheet, a half-wave plate, a polarizer, a spatial filter and a beam splitter arranged in sequence; the strong attenuation sheet is used to attenuate the energy of the laser beam to a safe level to protect the subsequent optical elements, the half-wave plate and the polarizer are used in cooperation to further attenuate the energy of the laser beam, the spatial filter is used to filter the laser, and the beam splitter is used to split the laser to obtain a first Gaussian beam and a second Gaussian beam; The first light path comprises a beam expander, a beam homogenizer, a collimator and a first variable attenuator; the first Gaussian beam passes through the beam expander to adjust the beam diameter, the beam homogenizer converts the Gaussian beam into a flat-top beam, the collimator collimates the received incident light into parallel light, and then the energy intensity is adjusted through the first variable attenuator; finally, the beam is transmitted to the common output light path; The second light path comprises a conical lens, a Fourier transform lens, a variable diaphragm and a second variable attenuator; the conical lens receives the second Gaussian beam to generate a ring-shaped beam, the Fourier transform lens converts the beam from the spatial domain into the frequency domain to form a Bessel beam, the variable diaphragm is placed at the spectral plane position to suppress the side lobe of the beam, and the second variable attenuator adjusts the energy intensity; finally, the beam is transmitted to the common output light path; The common output light path comprises a focusing objective lens, which focuses the beam generated by the first light path to be incident onto the surface of the device under test, and recombines the spectrum of the beam generated by the second light path into a Bessel beam with suppressed side lobe to be incident onto the surface of the device under test.
[0011] Further, the control system comprises a computer and a shutter; the computer serves as a control unit, the shutter serves as a laser switch unit, and the computer and the shutter are connected through a communication cable; the computer is also connected to the laser parameter adjustment assembly through a cable.
[0012] Further, the test system comprises a three-dimensional displacement table, a probe table, a signal source, an oscilloscope and a CCD camera; the three-dimensional displacement table serves as a positioning unit, the probe table and the oscilloscope together constitute a signal acquisition unit, and the CCD camera serves as an observation unit; the probe table is fixedly installed on the moving platform of the three-dimensional displacement table and is driven by the three-dimensional displacement table to move in the three-dimensional space; the device under test is placed on the probe table and connected to the probe table; the signal source is connected to the probe table to provide an electrical excitation signal to the device under test; the oscilloscope is connected to the probe table to acquire the transient electrical response signal generated by the device under test under laser irradiation; the CCD camera is disposed towards the probe table through a support, and its video output end is connected to the computer to acquire the position information of the device under test.
[0013] Furthermore, the monitoring system consists of a power and energy meter, a beam analyzer, and a photodetector, both of which are connected to a computer. Specifically, the power and energy meter measures laser power and energy parameters; the beam analyzer measures the beam morphology and energy distribution; and the photodetector detects the wavelength, pulse width, and frequency parameters of the laser pulse in real time.
[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. This invention achieves control over photon absorption modes by adjusting the laser wavelength, and combines beam shaping technology and optical path adjustment to reconstruct and control the optical field of laser irradiation. This allows for flexible control of the charge track distribution generated by the laser in semiconductor materials, making it closer to the charge track distribution generated by the two transient ionization effects of dose rate effect and single-event effect. It effectively solves the problems of charge track distribution differences and limited single-point focusing capability in laser simulation of dose rate effect and single-event effect. It enables adjustable parameters such as laser wavelength, energy, and spot size, coaxial focusing for illumination and display, and single-point testing and global irradiation. It realizes integrated automatic control of display imaging, irradiation testing, and monitoring, and achieves multi-functional application integration of laser simulation of dose rate effect and single-event effect. This is of great significance for the study of dose rate effect and single-event effect generated by devices under real radiation. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the system structure for an example embodiment; Figure 2 This is a schematic diagram of the system functions in the embodiment; Figure 3 This is a diagram illustrating the principle of single-photon and two-photon absorption, along with a comparison of the resulting charge tracks. Figure 4 The beam shaping and adjustment optical path diagram for the embodiment is shown, where (a) is the conversion of a Gaussian beam to a flat-top beam and (b) is the conversion of a Gaussian beam to a Bessel beam. Detailed Implementation
[0016] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.
[0017] like Figures 1-2 As shown, this embodiment provides a laser simulation device for transient ionization effects based on beam manipulation, comprising three components: a multi-wavelength nanosecond-femtosecond laser source, a beam shaping and adjustment optical path, and a control, testing, and monitoring system. Among them: Multi-wavelength nanosecond-femtosecond laser sources are used to generate lasers with pulse widths covering the nanosecond to femtosecond range and send them to the beam shaping and modulation optical path. The multi-wavelength nanosecond-femtosecond laser source integrates a laser parameter adjustment unit and a frequency doubling conversion module: the laser parameter adjustment unit can adjust the laser wavelength, repetition frequency, and pulse width parameters according to application requirements; the frequency doubling conversion module can convert the laser wavelength, achieving laser pulse output of different wavelengths. For example... Figure 3 As shown, when the multi-wavelength nanosecond-femtosecond laser source in this embodiment irradiates the semiconductor, different photon absorption modes, such as two-photon / multi-photon absorption, are formed according to the semiconductor's bandgap, thereby exciting charge tracks inside the semiconductor. The two-photon / multi-photon absorption mechanism concentrates the charge tracks at the laser focal point, providing support for precise three-dimensional positioning of the device's sensitive areas. Furthermore, this laser source significantly improves the resolution of laser simulation and enhances its adaptability to devices with different bandgap widths. Through these two aspects—precise positioning support and parameter adaptation optimization—the goal of controlling the distribution of ionization tracks inside the device is ultimately achieved.
[0018] The beam shaping and adjustment optical path is used to split the received incident light into a first Gaussian beam and a second Gaussian beam. The first Gaussian beam is shaped into a flat-top beam, and the second Gaussian beam is shaped into a Bessel beam. During the shaping of the Gaussian beam into the flat-top beam and the Bessel beam, the laser beam is adjusted and guided to the device under test. The specific structure of the beam shaping and adjustment optical path in this embodiment is as follows: The beam shaping and adjustment optical path includes a common input optical path, a first optical path, a second optical path, and a common output optical path. The common input optical path includes a strong attenuator, a half-wave plate, a polarizer, a spatial filter, and a beam splitter arranged sequentially. The first optical path includes a beam expander, a beam homogenizer, a collimator, and a first variable attenuator. The second optical path includes a conical lens, a Fourier transform lens, a variable aperture, and a second variable attenuator. The common output optical path includes a focusing objective lens. Figure 1 As shown, the laser beam output from the multi-wavelength nanosecond-femtosecond laser is attenuated to a safe level by a strong attenuator to protect subsequent optical components. A half-wave plate and polarizer are used together to further attenuate the laser beam energy. A spatial filter filters the laser beam, and a beam splitter splits it into a first Gaussian beam and a second Gaussian beam. The first Gaussian beam enters the first optical path to simulate the dose rate effect of the laser, such as... Figure 4As shown in Figure a, the beam is first expanded by a beam expander, then converted into a flat-top beam by a beam homogenizer, and finally into parallel light by a collimator. The energy is then adjusted using a first variable attenuator and input to a common output optical path. A focusing objective lens focuses the beam onto the device under test. The adjusted laser achieves uniform ionization across the entire irradiated area, ultimately enabling accurate simulation of the dose rate effect. A second Gaussian beam enters the second optical path to simulate the single-event effect of the laser, as shown in Figure a. Figure 4 As shown in Figure b, the Gaussian beam is first converted into a ring beam by a conical lens. The Fourier transform lens converts the beam from the spatial domain to the frequency domain to form a Bessel beam. A variable aperture is placed at the spectral plane to suppress beam sidelobes. The beam is transmitted to the common output optical path by adjusting the energy intensity through a second variable attenuator. The focusing objective recombines the spectrum of the beam generated by the second optical path into a Bessel beam with suppressed sidelobes, which is then incident on the surface of the device under test. By adjusting the laser wavelength and the optical field distribution, the generated charge track distribution can be flexibly controlled, ultimately achieving accurate simulation of the single-event effect.
[0019] The control, testing, and monitoring system includes a control system, a testing system, and a monitoring system. The control system includes a computer and a shutter. The computer is connected to the shutter via a cable, controlling its opening and closing state to control whether laser output is enabled. The control computer is also connected to a parameter adjustment unit to regulate the laser's power, frequency, and pulse width parameters. The testing system includes a three-dimensional displacement stage, a probe station, a signal source, an oscilloscope, and a CCD camera. The probe station is fixed to the moving platform of the three-dimensional displacement stage and is driven by the stage to move in three-dimensional space. The device under test (DUT) is placed on the probe station and connected to it via probes. The signal source is connected to the probe station to provide electrical excitation signals to the DUT. The oscilloscope, connected to the probe station, acquires the transient electrical response signals generated by the DUT under laser irradiation. The CCD camera is positioned facing the probe station via a bracket, and its video output is connected to the computer via a cable to acquire real-time position images of the DUT. The monitoring system includes a power and energy meter, a beam analyzer, and a photodetector. A power and energy meter measures the energy or power parameters of the laser, a beam analyzer measures the spot morphology and energy distribution, and a photodetector monitors the pulse width, wavelength, and frequency parameters of the laser pulse in real time and sends the data to a computer. The computer is configured to: receive and process response signals from an oscilloscope to analyze the pulse width and amplitude; simultaneously receive laser parameter data from the monitoring system; and generate control commands accordingly to perform closed-loop feedback control of the shutter and laser adjustment components.
[0020] In summary, the transient ionization effect laser simulation device provided in this embodiment, through a multi-wavelength nanosecond-femtosecond laser source and in conjunction with beam shaping and optical path adjustment, enables the laser incident on the test object to achieve optical field reconstruction and energy control. This not only meets the needs of different semiconductor materials and devices but also achieves multifunctional application integration for simulating both dose rate effects and single-event effects. Furthermore, because the multi-wavelength nanosecond-femtosecond laser source integrates parameter adjustment and frequency doubling modules, the charge track distribution generated by the laser on the semiconductor surface and within the semiconductor can be further controlled by adjusting the laser parameters. Based on this, the difference in charge deposition track profiles formed in the semiconductor during laser-simulated dose rate effects and single-event effects can be reduced, ultimately generating charge tracks that more closely resemble transient ionizing radiation effects (especially those induced by single-event effects). This process effectively improves the three-dimensional spatial resolution and physical realism of the laser simulation, which is of great significance for studying the transient ionization effects of devices under real radiation environments.
[0021] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A laser simulation device based on the instantaneous ionization effect of beam regulation, comprising: The multi-wavelength nanosecond-femtosecond laser source, beam shaping and adjusting optical path, control and test and monitoring system are characterized in that: The multi-wavelength nanosecond-femtosecond laser source is used for generating laser with pulse width range covering nanosecond to femtosecond order and sending to the beam shaping and adjusting optical path; The beam shaping and adjusting optical path is used for performing beam splitting processing on the received incident light to obtain a first Gaussian beam and a second Gaussian beam, shaping the first Gaussian beam into a flat-top beam, and shaping the second Gaussian beam into a Bessel beam; in the process of shaping the above Gaussian beams into the flat-top beam and the Bessel beam, the laser beam is expanded or focused for processing and then guided to a device to be tested; The control and test and monitoring system includes a control system, a test system and a monitoring system; the control system includes a control unit and a laser switch unit controlled by the control unit; the test system includes a displacement positioning unit for carrying and positioning a device to be tested; a signal acquisition unit cooperates with the displacement positioning unit to acquire a transient electrical response signal of the device to be tested; an observation unit is used to obtain position information of the device to be tested; the control unit is connected with the signal acquisition unit, the observation unit and the monitoring system to receive the transient electrical response signal, the position information and laser parameter information; the control unit is configured to: according to the laser parameter information, perform closed-loop feedback control on a laser parameter adjusting unit to stabilize laser output; based on the transient electrical response signal and the position information, manage and control the control displacement positioning unit and adjust laser parameter setting.
2. The laser simulation device based on the instantaneous ionization effect of beam control according to claim 1, characterized in that, The multi-wavelength nanosecond-femtosecond laser source is integrated with a parameter adjusting unit and a frequency doubling conversion module; the parameter adjusting unit is used for adjusting wavelength, repetition frequency and pulse width parameters of the laser according to application requirements, and the frequency doubling conversion module is used for converting the wavelength of the laser.
3. The laser simulation device based on the instantaneous ionization effect of beam control according to claim 1, characterized in that, The beam shaping and adjusting optical path includes a common input optical path, a first optical path, a second optical path and a common output optical path; The common input optical path includes a strong attenuation sheet, a half-wave plate, a polarizer, a spatial filter and a beam splitter arranged in sequence; the strong attenuation sheet is used to attenuate the energy of the laser beam to a safe level to protect subsequent optical elements, the half-wave plate and the polarizer are used in cooperation to further attenuate the energy of the laser beam, the spatial filter performs filtering processing on the laser, and the beam splitter performs beam splitting processing on the laser to obtain a first Gaussian beam and a second Gaussian beam; The first optical path includes a beam expander, a beam homogenizer, a collimator and a first variable attenuator; the first Gaussian beam passes through the beam expander to adjust the beam diameter, the beam homogenizer converts the Gaussian beam into a flat-top beam, the collimator calibrates the received incident light into parallel light, and then the energy intensity is adjusted through the first variable attenuator; finally, the beam is transmitted to the common output optical path; The second optical path includes a conical lens, a Fourier transform lens, a variable diaphragm and a second variable attenuator; the conical lens receives the second Gaussian beam to generate a ring-shaped beam, the Fourier transform lens converts the beam from spatial domain to frequency domain to form a Bessel beam, the variable diaphragm is placed on the spectral plane position to suppress the beam side lobe, and the second variable attenuator adjusts the energy intensity; finally, the beam is transmitted to the common output optical path. The common output light path comprises a focusing objective, which focuses the light beam generated by the first light path to the surface of the device to be measured and recombines the spectrum of the light beam generated by the second light path into a Bessel light beam with suppressed sidelobes to be incident on the surface of the device to be measured.
4. The laser simulation device based on the instantaneous ionization effect of beam control according to claim 1, characterized in that, The control system is composed of a computer and a shutter; wherein the computer serves as a control unit, the shutter serves as a laser switch unit, and the computer and the shutter are connected through a communication cable; meanwhile, the computer is also connected with the laser parameter adjusting assembly through a cable.
5. The laser simulation device based on the instantaneous ionization effect of beam control according to claim 4, characterized in that, The test system comprises a three-dimensional displacement table, a probe table, a signal source, an oscilloscope and a CCD camera; wherein the three-dimensional displacement table serves as a positioning unit, the probe table and the oscilloscope jointly constitute a signal acquisition unit, and the CCD camera serves as an observation unit; the probe table is fixedly installed on a moving platform of the three-dimensional displacement table and is driven by the three-dimensional displacement table to move in a three-dimensional space; the device to be tested is placed on the probe table and connected with the probe table; the signal source is connected with the probe table and is used to provide an electric excitation signal to the device to be tested; the oscilloscope is connected with the probe table and is used to acquire a transient electrical response signal generated by the device to be tested under laser irradiation; the CCD camera is disposed towards the probe table through a support, a video output end of the CCD camera is connected with a computer, and the CCD camera is used to acquire position information of the device to be tested.
6. The laser simulation device based on the instantaneous ionization effect of beam control according to claim 5, characterized in that, The monitoring system is composed of a power and energy meter, a light beam analyzer and a photoelectric detector, and the light beam analyzer and the photoelectric detector are connected with a computer; wherein the power and energy meter is used to measure laser power and energy parameters; the light beam analyzer is used to measure spot morphology and energy distribution; and the photoelectric detector is used to detect wavelength, pulse width and frequency parameters of laser pulses in real time.