Lower electrode and regeneration process and application thereof

Abstract

The invention belongs to the field of LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode) display panels, and relates to a lower electrode and a regeneration process and application thereof. The technical problem that in the prior art, a lower electrode regenerated in a dry etching process and physical vapor deposition, plastic sealing liquid cannot permeate thoroughly, and consequently electrical property is abnormal is solved. The invention provides a lower electrode which comprises a metal base material, a buffer layer, a lower layer, an electrode layer and an upper layer which are sequentially arranged from bottom to top, the total thickness of the buffer layer, the lower layer, the electrode layer and the upper layer is 960-1400 microns, and the cross section of the lower electrode is not colored after the lower electrode is treated by a coloring agent. The lower electrode improves the electrical performance. The invention further provides a regeneration technology of the lower electrode. The regeneration technology comprises the following steps that sand blasting is conducted on the metal base material; carrying out buffer layer meltallizing and lower layer meltallizing; performing plastic packaging, grinding and sand blasting on the lower layer; electrode layer meltallizing, upper layer meltallizing, side surface meltallizing of the metal base material, and grinding and plastic packaging of the upper layer and the side surface; and carrying out sand blasting on the plastic-packaged upper layer. The invention further provides application of the lower electrode.

Description

Technical Field

[0001] This invention belongs to the field of LCD and OLED display panel technology, specifically relating to the lower electrode and its regeneration process and application. Background Technology

[0002] The lower electrode (also known as an electrostatic chuck) is a key component used in dry etching and physical vapor deposition (PVD) equipment for manufacturing LCD and AMOLED panels. It carries and electrostatically holds the glass substrate (or silicon wafer). Currently, commonly used lower electrode structures mainly include: an upper dielectric layer, an electrode layer, a lower dielectric layer, a metal substrate, and a power supply section. The lower electrode is used by applying an electric current (3kV~5kV) to a conductive rod, establishing an electrostatic field on the surface of its dielectric layer, which then uses Coulomb force to adhere and fix the glass substrate to be etched. Therefore, the electrical properties of the lower electrode coating have very high requirements.

[0003] The existing lower electrode regeneration process typically includes the following steps: substrate processing → lower dielectric layer spraying → electrode layer spraying → upper dielectric layer spraying → encapsulation → sandblasting. However, the existing lower electrode manufacturing process has the following problems: 1) The difference in thermal expansion coefficients between the substrate and the lower dielectric layer spraying material leads to coating peeling, bulging, and detachment; 2) After spraying, the coating contains many pores, making it susceptible to moisture absorption. The lower electrode obtained by the above process is prone to electrical abnormalities, mainly manifested as: 1) As storage or usage time increases, the coating absorbs moisture, resulting in lower resistance, higher leakage current, and decreased surface electrostatic adsorption, eventually leading to back cooling gas flow abnormalities and rendering the lower electrode unusable. 2) The insulation layer is prone to breakdown during outgoing inspection. The maximum voltage applied during outgoing inspection is 5 kV, and the withstand voltage of the lower layer must meet the breakdown voltage of at least 5 kV. 3) Resistance and leakage current values ​​exceed standards during outbound inspection: For example, when applying a 500V resistor, the resistance should reach 500MΩ or more, and the leakage current should be less than 30μA.

[0004] For example, Chinese invention patent application publication number CN 113667919A, application date August 23, 2021, entitled "A Regeneration Process for Lower Electrodes in Dry Etching of LCD and AMOLED Devices," discloses the following steps: S11, Disassembly: Disassembling the electrode to be regenerated from the dry etching equipment; S12, Film Removal: Removing the surface portion of the original ceramic coating on the electrode surface; S13, Masking: Masking the back and sides of the electrode with a masking material; S14, Sandblasting: Sandblasting the electrode surface; S15, Coating: Applying a ceramic coating to the electrode surface using a thermal spraying method; S16, Removing Masking Material: Removing the masking material from S13 after coating; S17, Sealing: Sealing the sprayed ceramic coating with a sealing agent; S18, Finishing: Processing the electrode surface to form a protrusion around the perimeter of the electrode surface; S19, Assembly: Reassembling the electrode with the dry etching equipment. The regenerated electrodes produced by this process exhibit electrical anomalies, making it difficult to meet the stability requirements of the dry etching process.

[0005] Therefore, there is an urgent need to provide a regeneration process for the lower electrode to improve the electrical performance of the regenerated lower electrode. Summary of the Invention

[0006] 1. The problem to be solved This application addresses the technical problem of incomplete encapsulation solution penetration leading to abnormal electrical properties in regenerated lower electrodes produced by existing dry etching and physical vapor deposition processes. The present application provides a lower electrode that improves electrical performance. It also provides a regeneration process for the lower electrode and its application in the fabrication of semiconductors and display panels.

[0007] 2. Technical Solution To achieve the above objectives, the provided technical solution is as follows: The lower electrode comprises a metal substrate, a buffer layer, a lower layer, an electrode layer, and an upper layer arranged sequentially from bottom to top. The total thickness of the buffer layer, the lower layer, the electrode layer, and the upper layer is 960 μm to 1400 μm. After the lower electrode is colored, its cross-section is not colored.

[0008] The regeneration process of the lower electrode includes the following steps: Sandblasting is performed on the metal substrate; The upper surface of the metal substrate is sequentially sprayed with a buffer layer, followed by the lower layer. The lower layer is encapsulated, ground, and sandblasted to obtain the processed lower layer. Electrode layer spraying, upper layer spraying, and side spraying of the metal substrate are performed sequentially on the upper surface of the processed lower layer. The upper layer and sides are ground and sealed; then the sealed upper layer is sandblasted.

[0009] Preferably, the total spray thickness of the metal buffer layer, the lower layer, the electrode layer, and the upper layer is 960 μm to 1400 μm.

[0010] Preferably, after the upper layer is ground, a dam shape is formed on the outer ring of the upper layer.

[0011] Further, the molding material includes any one of epoxy resin, silicone, or acrylic; the molding steps include preheating before molding, molding, and curing after molding; the preheating temperature is 50 °C~80 °C, and the preheating time is 12 h~16 h; the molding temperature is 40 °C~60 °C, and the molding time is 4 h~5 h; the curing temperature is 40 °C~60 °C, and the curing time is ≥48 h.

[0012] Preferably, the preheating temperature is 50 °C, 60 °C, 70 °C or 80 °C, the preheating time is 12 h, 13 h, 14 h, 15 h or 16 h; the sealing chamber temperature is 40 °C, 50 °C or 60 °C, the sealing time is 4 h, 4.5 h or 5 h; and the curing temperature is 40 °C, 50 °C or 60 °C.

[0013] Furthermore, the sandblasting material includes either silicon carbide or white corundum, the sandblasting distance is 200 mm to 500 mm, the sandblasting pressure is 0.3 MPa to 0.5 MPa, and the roughness Ra after sandblasting is 3 μm to 6 μm.

[0014] Preferably, the sandblasting distance is 200 mm, 300 mm, 400 mm or 500 mm, and the sandblasting pressure is 0.3 MPa, 0.4 MPa or 0.5 MPa.

[0015] Furthermore, the buffer layer is formed by spraying a metal buffer layer onto the surface of a metal substrate. The spraying material used is nickel metal powder, and the thickness of the buffer layer is 30 μm to 50 μm.

[0016] Furthermore, the lower layer is formed by spraying on the upper surface of the metal buffer layer. The spraying material used is one or more of Y2O3, Al2O3, YAG, YAS, YAM, YF3 or YOF. The thickness of the lower layer formed after spraying, encapsulation and grinding is 600 μm to 750 μm.

[0017] Preferably, the thickness of the lower layer formed after grinding is 600 μm, 700 μm or 750 μm.

[0018] Preferably, the grinding reduces the thickness of the lower layer by 100 μm.

[0019] Furthermore, the electrode layer is formed by electroplating on the upper surface of the processed lower layer. The electroplating material used is tungsten metal powder, and the thickness of the electroplated electrode layer is 30 μm to 50 μm.

[0020] Furthermore, the upper layer is formed by spraying the upper layer onto the surface of the electrode layer; when the upper layer is sprayed and the side layer is sprayed, the spraying material used is one or more of Y2O3, Al2O3, YAG, YAS, YAM, YF3 or YOF, the thickness of the upper layer formed by spraying is 300 μm to 550 μm, and the thickness of the side layer formed by spraying is 350 μm to 600 μm.

[0021] Preferably, the thickness of the upper layer formed by the melt spray is 300 μm, 400 μm, 500 μm or 550 μm.

[0022] Preferably, the thickness of the side surface formed by the melt spray is 350 μm, 400 μm, 500 μm or 600 μm.

[0023] Furthermore, the distance of the plasma spray is 90~150mm; the powder feed rate is 10~30 g / min; the speed is 400 mm / s~2000 mm / s; the plasma voltage is 30 V~40 V; and the plasma current is 700 A~900 A.

[0024] Preferably, the spraying distance is 90 mm, 100 mm, 110 mm, 120 mm, 130 mm, 140 mm or 150 mm; the powder feed rate is 10 g / min, 20 g / min or 30 g / min; the speed is 400 mm / s, 600 mm / s, 800 mm / s, 1000 mm / s, 1200 mm / s, 1400 mm / s, 1600 mm / s, 1800 mm / s or 2000 mm / s; the plasma voltage is 30 V, 35 V or 40 V; and the plasma current is 700 A, 800 A or 900 A.

[0025] The application of the lower electrode involves using the lower electrode or the lower electrode prepared by the regeneration process in the fabrication of semiconductors and display panels.

[0026] 3. Beneficial effects Compared with existing known technologies, the technical solution provided by this invention has the following beneficial effects: (1) The lower electrode of the present invention comprises a metal substrate, a buffer layer, a lower layer, an electrode layer, and an upper layer arranged sequentially from bottom to top. The total thickness of the buffer layer, the lower layer, the electrode layer, and the upper layer is 960 μm to 1400 μm. After the lower electrode is treated with a coloring agent, its cross-section is not colored. The electrical performance of the lower electrode is improved. The lower layer plays a core role in the function of the lower electrode. The resistance of the lower layer is 13.5 GΩ and the leakage current is 38.1 nA, indicating that the lower layer of the lower electrode has high insulation and extremely low leakage current. At the same time, it also reflects that the encapsulating liquid has penetrated thoroughly, avoiding the instability of the resistance value caused by moisture seeping into the lower layer during long-term storage. Thus, while ensuring that the lower electrode meets the agreed service life, it prevents the occurrence of electrical breakdown and BC failure caused by unstable resistance value.

[0027] (2) The regeneration process of the lower electrode of the present invention involves molding, grinding, and sandblasting the lower layer after the lower layer is sprayed to obtain the processed lower layer; after the upper layer and side layer are sprayed, the upper layer and side layer are ground and molded again. At the end of the process of producing the lower electrode, a molding liquid is used to mold the surface coating. The purpose is to allow the molding liquid to penetrate into the pores of the coating, fill and harden it, which can effectively improve the electrical properties of the coating and prevent moisture in the air from penetrating into the coating. However, in the existing regeneration process, only the upper layer is molded. The coating thickness to be molded is 960 μm to 1400 μm. During molding, it can only be applied by brushing or soaking on the surface of the coating. After standing for a period of time, the molding liquid cannot penetrate the entire coating. This application ensures that the molding liquid completely penetrates into the pores of the coating through two molding processes, thereby improving the electrical performance of the lower electrode; improving the stability of molding; reducing the contamination of the coating before molding; verifying the service life of the lower electrode; and judging the molding effect through timely detection.

[0028] (3) The application of the lower electrode of the present invention involves using the lower electrode or the lower electrode prepared by the regeneration process in the preparation of semiconductors and display panels. This can save costs, with the regeneration cost being only 20-40% of that of new parts; and ensure process stability and product yield. Attached Figure Description

[0029] Figure 1 This is a process flow diagram of the regeneration process of the lower electrode in this application; Figure 2 This is a cross-sectional view of the colorant test piece obtained from the regeneration process in Example 1; Figure 3 This is a test diagram of the lower layer resistance in Example 1; Figure 4 The process flow diagram for regenerating the lower electrode in Comparative Example 1 is shown. Figure 5 This is a cross-sectional view of the colorant test results of the specimens obtained from the regeneration process in Comparative Example 1. Figure 6 This is a test diagram of the lower layer resistance in Comparative Example 1; Figure 7 This is a plastic seal image of the specimen from Comparative Example 2; Figure 8 This is a cross-sectional view of the colorant test piece obtained by the regeneration process in Comparative Example 3; Figure 9 This is a test diagram of the lower layer resistance in Comparative Example 3; Figure 10 SEM images of specimens obtained from the regeneration processes of Comparative Example 1(a), Comparative Example 3(b), and Example 1(c). Detailed Implementation

[0030] To further understand the content of this invention, the invention will be described in detail with reference to the embodiments.

[0031] The present application will be further described below with reference to specific embodiments.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0033] Unless otherwise specified in the examples, the procedures should be performed under standard conditions or conditions recommended by the manufacturer. Reagents or instruments whose manufacturers are not specified are all commercially available products.

[0034] As used herein, the term “about” is used to provide for the flexibility and imprecision associated with a given term, measure, or value. Those skilled in the art can readily determine the degree of flexibility for a particular variable. As used herein, the term “at least one of…” is intended to be synonymous with “one or more of…”. For example, “at least one of A, B, and C” explicitly includes only A, only B, only C, and combinations thereof. Concentration, amount, and other numerical data may be presented in range format herein. It should be understood that such range format is used solely for convenience and brevity and should be flexibly interpreted to include not only the values ​​explicitly stated as the limits of the range, but also all individual values ​​or subranges encompassed within the range, as if each value and subrange were explicitly stated. For example, a range of values ​​from about 1 to about 4.5 should be interpreted to include not only the explicitly stated limits of 1 to 4.5, but also individual numbers (such as 2, 3, 4) and subranges (such as 1 to 3, 2 to 4, etc.). The same principle applies to ranges that describe only a single value, such as "less than about 4.5," which should be interpreted to include all the values ​​and ranges described above. Furthermore, this interpretation should apply regardless of the breadth of the range or characteristic described.

[0035] Example 1 In this embodiment, the regeneration process of the lower electrode has a total spray thickness of 1250 μm for the metal buffer layer, lower layer, electrode layer, and upper layer. The process flow is as follows: Figure 1 As shown, it includes the following steps: S1. Upon arrival, inspect the coating, peel off the coating, and sandblast the coating. Replace the power supply rod: Select a matching power supply rod according to the mounting holes on the metal substrate and bond it with special glue. The curing time is 6 h to 8 h and the curing temperature is 25 ℃ to 30 ℃.

[0036] S2. Sandblast the metal substrate to achieve a roughness Ra of 3 μm to 6 μm. The sandblasting material is white alumina, the sandblasting distance is 400 mm, and the sandblasting pressure is 0.4 MPa. In some implementations, the blasting distance is 200 mm to 500 mm, and the blasting pressure is 0.3 MPa to 0.5 MPa.

[0037] Sandblasting is a crucial pretreatment step before melt spraying. By creating a uniform surface roughness through sandblasting, it significantly enhances the adhesion of the coating. If the roughness is too low, the coating adhesion will be poor, easily leading to coating peeling. This process is usually performed by robotic arms or robots in a sandblasting booth to ensure uniform and controllable roughness.

[0038] S3. Buffer layer spraying: A metal buffer layer is formed on the surface of the metal substrate by plasma spraying. The spraying material used is nickel metal powder, the thickness of the buffer layer is 50 μm, and the resulting metal buffer layer is a nickel layer (Ni). The specific plasma spraying parameters are as follows: spraying distance: 120 mm; powder feed rate: 20 g / min; robot oscillation speed: 1000 mm / s; plasma voltage: 35 V; plasma current: 800 A; In some embodiments, the spraying distance is 90 mm to 150 mm; the powder feed rate is 10 g / min to 30 g / min; the speed is 400 mm / s to 2000 mm / s; the plasma voltage is 30 V to 40 V; and the plasma current is 700 A to 900 A.

[0039] During the spraying process, pay attention to the uniformity of powder feeding and the appearance of the coating, and turn on the cooling air at the spray gun to prevent the temperature of the lower electrode itself from getting too high (below 50 °C).

[0040] Because of the difference in thermal expansion coefficients between the metal substrate (aluminum base material) and the lower layer of sprayed material, the nickel layer acts as a buffer between the aluminum base material and the subsequent sprayed coating, preventing coating peeling, bulging, and detachment caused by the difference in thermal expansion coefficients.

[0041] S4. Lower layer spraying: The lower layer is formed by plasma spraying on the upper surface of the metal buffer layer; the spraying material used is Al2O3 powder, and the thickness of the lower layer is 700 μm. In some embodiments, the spraying material used is one or more of Y2O3, YAG, YAS, YAM, YF3 or YOF.

[0042] The specific plasma spraying parameters are as follows: spraying distance: 120 mm; powder feed rate: 20 g / min; robot oscillation speed: 1000 mm / s; plasma voltage: 35 V; plasma current: 800 A; During the spraying process, pay attention to the uniformity of powder feeding and the appearance of the coating, and turn on the cooling air at the spray gun to prevent the temperature of the lower electrode itself from getting too high (below 50°C).

[0043] S5. The lower layer is encapsulated, ground, and sandblasted to obtain the processed lower layer. (1) Specific steps for sealing the lower layer: Masking: Apply tape around the lower electrode to act as a barrier and prevent the sealing liquid from dripping from the side; Molding fluid material: Epoxy resin is selected based on the environment in which the lower electrode is used at the client's location; Preheating before molding: The lower electrode needs to be preheated before molding at 60 °C for 14 hours; the resistance value should be measured to be ≥1MΩ before molding and the measurement data should be saved. Sealing: Sealing temperature: Sealing is carried out in a sealing chamber. The sealing chamber temperature is set to 60°C in advance according to the selected sealing liquid material; Sealing time: The sealing liquid is applied to the surface of the lower layer, and the sealing time is 4 hours; Sealing liquid level: 1 cm; Curing after sealing: After the sealing time is reached, wipe off the excess sealing liquid from the surface and cure in an oven at 50 °C for 48 h.

[0044] In some embodiments, the preheating temperature is 50 °C to 80 °C, the preheating time is 12 h to 16 h, the sealing chamber temperature is 40 °C to 60 °C, the sealing time is 4 h to 5 h, and the curing temperature is 40 °C to 60 °C.

[0045] (2) Grind the lower layer after plastic sealing; Because the surface of the lower layer is rough, it cannot be completely removed by wiping after plastic sealing, which will affect the adhesion with the subsequent melt-sprayed coating. Therefore, it is necessary to grind the lower layer by 100 μm to reduce the coating thickness. After grinding, the lower layer thickness is 600 μm. After grinding, it is soaked in pure water for 4 hours, high pressure cleaned, and dried at 60°C for 8 hours. (3) Measure the resistance: After drying, measure the resistance and compare it with the resistance value measured before sealing. The resistance value that can be measured in GΩ units when sealing is normal is ≥1GΩ. If the resistance value reaches GΩ, proceed to the next step normally. If the resistance value is in MΩ, it means that the encapsulation effect is NG. It is necessary to check the parts that are not completely encapsulated or to encapsulate the parts separately and then perform local measurements until the resistance value reaches GΩ. (4) Sandblast the lower layer after grinding; Because the surface roughness of the coating after surface grinding is lower than the required data, sandblasting is required to roughen the surface to achieve a surface roughness of Ra 3 μm~6 μm. The sandblasting material is white alumina, the sandblasting distance is 400 mm, and the sandblasting pressure is 0.4 MPa.

[0046] S6. Electrode layer spraying: The electrode layer is formed by plasma spraying on the upper surface of the processed lower layer. The spraying material is tungsten metal powder, and the thickness of the electrode layer formed by spraying is 50 μm. The specific spraying parameters are as follows: spraying distance: 120 mm; powder feed rate: 20 g / min; robot oscillation speed: 1000 mm / s; plasma voltage: 35 V; plasma current: 800 A.

[0047] S7. Upper layer spraying: The upper layer is formed by plasma spraying on the upper surface of the electrode layer; the spraying material used is Al2O3 powder, and the thickness of the upper layer is 550 μm. S8. Side spraying: Plasma spraying is used to spray the side of the aluminum base material; the spraying material is Al2O3 powder, and the thickness of the side formed by the spraying is 600 μm. The specific spraying parameters are as follows: spraying distance: 120 mm; powder feed rate: 20 g / min; robot oscillation speed: 1000 mm / s; plasma voltage: 35V; plasma current: 800A.

[0048] The purpose of side spraying is to insulate the sides of the aluminum substrate. In actual dry etching environments, conductors are not allowed, as the presence of conductors can easily cause breakdown and short circuits.

[0049] S9. Perform final grinding and molding on the top layer and sides; (1) Perform final grinding on the upper layer and sides; The upper layer and sides are rough and fine ground using a CNC machining center. At the same time, a dam shape is formed on the outer ring of the upper layer for subsequent tight bonding with the glass panel.

[0050] (2) The top layer and sides are then sealed with plastic after final grinding; Masking: Apply tape to the areas of the lower electrode that do not require sealing to prevent sealing liquid from dripping; Molding fluid material: Epoxy resin is selected based on the environment in which the lower electrode is used at the client's location; Drying before molding: The lower electrode needs to be preheated before molding at 60 °C for 14 hours; Measure the resistance and save the measurement data before molding; Sealing temperature: Sealing is carried out in a sealing chamber. The sealing chamber temperature is set to 60°C in advance, depending on the selected sealing liquid material. Molding time: The molding liquid is applied to the surface of the upper layer and the side of the aluminum substrate, and the molding time is 5 hours; Plastic sealant level: 1 cm; After the sealing time is reached, wipe off any excess sealing liquid from the surface and then harden the product in an oven at 50 °C for 48 hours.

[0051] Electrical testing after hardening: Measure the resistance and leakage current of the lower layer, such as... Figure 3 As shown, the resistance is 13.5 GΩ and the leakage current is 38.1 nA.

[0052] During testing, the electrical data (resistance / leakage current) remained relatively stable, thus preventing breakdown of the lower layer during final outgoing inspection. When the plastic seal is normal, a resistance value in GΩ units can be measured, and the leakage current value is less than 30 μA.

[0053] S10. Sandblasting treatment of the upper layer after plastic sealing; The roughness Ra after sandblasting is 3 μm~6 μm, the sandblasting material is white alumina, the sandblasting distance is 400 mm, and the sandblasting pressure is 0.4 MPa. In this embodiment, the regeneration process involves two encapsulation processes, with a separate encapsulation of the lower layer. This ensures complete penetration of the encapsulating liquid into the lower layer, resulting in a measurable resistance value exceeding 1 GΩ. Furthermore, because the encapsulating liquid fills all the voids within the lower layer, moisture cannot penetrate, leading to a stable resistance value. During outgoing inspection, a resistance value exceeding 1 GΩ can also be measured. From the completion of encapsulation to outgoing inspection, storage, and machine use, the resistance and leakage current data remain stable within the service life range. If the lower electrode is not subjected to any external impacts during use, its service life can be appropriately extended. Comparative Example 1 The regeneration process of the lower electrode in this comparative example only involves one molding process on the upper layer. The total melt spraying thickness of the metal buffer layer, lower layer, electrode layer, and upper layer is 1250 μm. The process flow is as follows: Figure 4 As shown, it includes the following steps: Step 1: Incoming inspection, coating peeling, sandblasting; Replace the power supply rod: Select the matching power supply rod according to the assembly hole on the base material and bond it with special glue. The curing time is 6~8 hours and the curing temperature is 25~30℃.

[0054] Step 2: Sandblast the metal substrate to achieve a roughness Ra of 3 μm to 6 μm. The sandblasting material is white alumina, the sandblasting distance is 400 mm, and the sandblasting pressure is 0.4 MPa.

[0055] Step 3, buffer layer spraying: A metal buffer layer is formed on the surface of the metal substrate by plasma spraying. The spraying material used is nickel metal powder, the thickness of the buffer layer is 50 μm, and the resulting metal buffer layer is a nickel layer (Ni). The specific plasma spraying parameters are as follows: spraying distance: 90 mm; powder feed rate: 10 g / min; robot oscillation speed: 400 mm / s; plasma voltage: 30 V; plasma current: 700 A; During the spraying process, pay attention to the uniformity of powder feeding and the appearance of the coating, and turn on the cooling air at the spray gun to prevent the temperature of the lower electrode itself from getting too high (below 50°C).

[0056] Step 4, lower layer spraying: The lower layer is formed by plasma spraying on the upper surface of the metal buffer layer; the spraying material used is Al2O3 powder, and the thickness of the lower layer is 600 μm; The specific plasma spraying parameters are as follows: spraying distance: 120 mm; powder feed rate: 20 g / min; robot oscillation speed: 1000 mm / s; plasma voltage: 30 V; plasma current: 800 A; During the spraying process, pay attention to the uniformity of powder feeding and the appearance of the coating, and turn on the cooling air at the spray gun to prevent the temperature of the lower electrode itself from getting too high (below 50°C).

[0057] Step 5, Electrode layer spraying: The electrode layer is formed by plasma spraying on the upper surface of the processed lower layer; the spraying material is tungsten metal powder, and the thickness of the electrode layer formed by spraying is 50 μm; The specific spraying parameters are as follows: spraying distance: 120 mm; powder feeding rate: 20 g / min; robot swing speed: 1000 mm / s; plasma voltage: 30 V; plasma current: 800 A.

[0058] Step 6, upper layer spraying: The upper layer is formed by plasma spraying on the upper surface of the electrode layer; the spraying material used is Al2O3 powder, and the thickness of the upper layer is 550 μm; The specific spraying parameters are as follows: spraying distance: 120 mm; powder feeding rate: 20 g / min; robot swing speed: 1000 mm / s; plasma voltage: 30 V; plasma current: 800 A.

[0059] Step 7, side spraying: Plasma spraying is used to spray the side of the aluminum base material; the spraying material is Al2O3 powder, and the thickness of the side formed by the spraying is 600 μm; The specific spraying parameters are as follows: spraying distance: 120 mm; powder feeding rate: 20 g / min; robot swing speed: 1000 mm / s; plasma voltage: 30 V; plasma current: 800 A.

[0060] Step 8: Perform final grinding and molding on the top layer and sides; (1) Perform final grinding on the upper layer and sides; The upper layer and sides are rough and fine ground using a CNC machining center. At the same time, a dam shape is formed on the outer ring of the upper layer for subsequent tight bonding with the glass panel.

[0061] (2) The top layer and sides are then sealed with plastic after final grinding; Masking: Apply tape to the areas of the lower electrode that do not require sealing to prevent sealing liquid from dripping; Molding fluid material: Epoxy resin is selected based on the environment in which the lower electrode is used at the client's location; Drying before molding: The lower electrode needs to be preheated before molding at 60 °C for 14 hours; Measure the resistance and save the measurement data before molding; Sealing temperature: Sealing is carried out in a sealing chamber. The sealing chamber temperature is set to 60°C in advance, depending on the selected sealing liquid material. Molding time: The molding liquid is applied to the surface of the upper layer and the side of the aluminum substrate, and the molding time is 3 hours; Plastic sealant level: 1 cm; After the sealing time is reached, wipe off any excess sealing liquid from the surface and then harden the product in an oven at 50 °C for 48 hours.

[0062] Electrical testing after hardening: Measure the resistance and leakage current of the lower layer, such as... Figure 6 As shown, the resistance is 48.8 MΩ and the leakage current is 10.5 μA.

[0063] Step 9: Sandblast the upper layer after plastic sealing; The roughness Ra after sandblasting is 3 μm~6 μm, the sandblasting material is white alumina, the sandblasting distance is 400 mm, and the sandblasting pressure is 0.4 MPa. This comparative example only performs one molding process on the upper layer, meaning the molding is done at the end of the process. In the earlier stages of the process, masking tape is applied to the coating surface, and the MCT equipment is exposed to cutting fluid for an extended period. These factors all affect the penetration of the molding fluid into the coating. Because the molding fluid did not completely penetrate the lower layer, the measured resistance value of the lower layer was 48.8 MΩ, which did not reach the GΩ resistance value. If there is an electrical abnormality after molding, the electrode must be reworked for the entire process. All previous processing steps are considered invalid operations, resulting in a double waste of resources and time.

[0064] Comparative Example 2 The regeneration process of the lower electrode in this comparative example only involves one molding of the upper layer, which is basically the same as that in Comparative Example 1, except that: The sealing time was 7 hours. Due to the long sealing time, the sealing liquid solidified, making it impossible to remove the test piece. Figure 7 As shown.

[0065] Comparative Example 3 The regeneration process of the lower electrode in this comparative example only involves one molding process on the upper layer, which is basically the same as that in Comparative Example 1. The difference is that the molding time is 4 h to 5 h.

[0066] Electrical testing after hardening: Measure the resistance and leakage current of the lower layer, such as... Figure 9 As shown, the resistance is 2.05 GΩ and the leakage current is 251 nA.

[0067] This comparative example also only performed one molding process on the upper layer. Although the resistivity of the sample obtained from the regeneration process was measured to be GΩ, the cross-section of the colorant test (such as...) showed... Figure 4 It is obvious that the sealing liquid has not fully penetrated. As time goes by, it gradually absorbs moisture, and the resistance value will gradually decrease, while the leakage current will increase.

[0068] Coloration tests were performed on the specimens obtained from the regeneration processes of Example 1, Comparative Example 1, and Comparative Example 3: The regenerated test specimens from Examples 1, 1, and 3 were cut open and directly immersed in a colorant (NUCLEAR PICO Color Check P2, a Korean brand from Nuclear Pico). After immersion at room temperature for 10 minutes, they were dried at 50 °C for 30 minutes. The cross-sections of the specimens were then observed. Figure 2 , Figure 5 , Figure 8 As shown.

[0069] Figure 2 The test piece obtained by the regeneration process in Example 1 did not change color in the cross section because both the lower and upper layers were encapsulated in this example. The encapsulating liquid completely penetrated from the upper layer to the lower layer and filled the gaps in the coating, so the colorant could not penetrate. Figure 5 and Figure 8 For the test pieces obtained from the regeneration processes of Comparative Examples 1 and 3, the lower layer of the cross-section appears red. This is because in the regeneration processes of the dry-etched electrodes in Comparative Examples 1 and 3, only the upper layer was encapsulated once, and the encapsulating liquid did not penetrate into the lower layer. Therefore, there are voids in the coating in this area, allowing the colorant to penetrate into the coating interior. The areas where the encapsulating liquid did not penetrate appear red. Figure 5 The lower layer has 300 μm of red color, indicating that the plastic sealant has penetrated to a thickness of 925 μm, and the non-penetrated thickness is 300 μm. Figure 8 The lower layer has 250 μm of red color, indicating that the plastic sealant has penetrated to a thickness of 1000 μm, and the non-penetrated thickness is 250 μm. Electron microscopy was performed on the specimens obtained from the regeneration processes of Example 1, Comparative Example 1, and Comparative Example 3. Figure 10 As shown, the SEM image displays the results of Example 1 ( Figure 10 c) The sealing liquid has completely filled the internal pores of the specimen, compared to Example 1 ( Figure 10 a) and Comparative Example 3 ( Figure 10 In b), the sealing liquid only partially fills the surface of the sample, while the unfilled areas retain their original porous morphology.

[0070] The embodiments described above are merely preferred embodiments of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications, improvements, and substitutions without departing from the concept of the present invention, and these all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A lower electrode characterized by: The electrode includes a metal substrate, a buffer layer, a lower layer, an electrode layer and an upper layer arranged in sequence from bottom to top, the total thickness of the buffer layer, the lower layer, the electrode layer and the upper layer is 960 μm-1400 μm; the cross section of the lower electrode is not colored after coloring treatment.

2. Process for the regeneration of a lower electrode, characterized in that: The electrode comprises the following steps: The metal substrate is subjected to sand blasting treatment; The upper surface of the metal substrate is subjected to buffer layer melting, lower layer melting in sequence; The lower layer is subjected to plastic packaging, grinding and sand blasting treatment to obtain a processed lower layer; The upper surface of the processed lower layer is subjected to electrode layer melting, upper layer melting in sequence, and the side surface of the metal substrate is subjected to melting; The upper layer and the side surface are subjected to grinding and plastic packaging, and the plastic packaged upper layer is subjected to sand blasting treatment.

3. The regeneration process of a lower electrode according to claim 2, characterized in that: The plastic packaging material comprises any one of epoxy resin, silicone or acrylic; the plastic packaging steps comprise preheating before plastic packaging, plastic packaging and hardening after plastic packaging; the preheating temperature is 50 °C-80 °C, and the preheating time is 12 h-16 h; the plastic packaging temperature is 40 °C-60 °C, and the plastic packaging time is 4 h-5 h; the hardening temperature is 40 °C-60 °C, and the hardening time is ≥48 h.

4. The regeneration process of the lower electrode according to claim 2, characterized in that: The sand blasting material comprises any one of silicon carbide or white corundum, the sand blasting distance is 200 mm-500 mm, the sand blasting pressure is 0.3 Mpa-0.5 Mpa, and the roughness Ra of the sand blasted surface is 3 μm-6 μm.

5. The process for regenerating a lower electrode according to claim 2, wherein: The buffer layer melting is performed on the upper surface of the metal substrate to form a metal buffer layer, and the melting material is nickel metal powder, and the thickness of the buffer layer is 30 μm-50 μm.

6. The process for regenerating lower electrode according to claim 2, wherein: The lower layer melting is performed on the upper surface of the metal buffer layer to form a lower layer, and the melting material is one or more of Y2O3, Al2O3, YAG, YAS, YAM, YF3 or YOF, and the thickness of the lower layer formed after melting, plastic packaging and grinding is 600 μm-750 μm.

7. The process for regenerating lower electrode according to claim 2, wherein: The electrode layer melting is performed on the upper surface of the processed lower layer to form an electrode layer, and the melting material is tungsten metal powder, and the thickness of the electrode layer formed by melting is 30 μm-50 μm.

8. The process for regenerating lower electrode according to claim 2, wherein: The upper layer melting is performed on the upper surface of the electrode layer to form an upper layer; the melting material for the upper layer melting and the side surface melting is one or more of Y2O3, Al2O3, YAG, YAS, YAM, YF3 or YOF, the thickness of the upper layer formed by melting is 300 μm-550 μm, and the thickness of the side surface formed by melting is 350 μm-600 μm.

9. Process for the regeneration of a lower electrode according to any one of claims 2-8, characterized in that: The melting distance is 90 mm-150 mm, the powder feeding amount is 10 g / min-30 g / min, the speed is 400 mm / s-2000 mm / s, the plasma voltage is 30 V-40 V, and the plasma current is 700 V-900 V. The lower electrode of claim 1 or the lower electrode prepared by the regeneration process of any one of claims 2-9 is applied to the preparation of semiconductor and display panels.

10. Use of a lower electrode, characterized in that: ​

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