A staggered type shingle structure photovoltaic module performance simulation method

Abstract

The application provides a staggered tile structure photovoltaic module performance simulation method, including the following steps: a plurality of first simulation models corresponding to a plurality of single cell pieces are virtually networked according to the series-parallel connection rule of the staggered tile structure and the inter-piece overlapping degree constraint to obtain a second simulation model of a cell piece group string; a plurality of second simulation models are virtually networked according to the topological structure of the cell piece group string in the photovoltaic module to obtain a third simulation model of the photovoltaic module; the defect state and the normal working state of the photovoltaic module are simulated by adjusting the target parameters of the third simulation model; and the performance indicators corresponding to the defect state and the normal working state of the photovoltaic module are calculated based on the output volt-ampere characteristic simulation parameters of the third simulation model under the corresponding target parameters. The staggered tile structure photovoltaic module performance simulation method provided by the application at least solves the problems of high performance analysis cost and insufficient test precision of the photovoltaic module.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic module performance analysis technology, and in particular to a method for simulating the performance of staggered shingled photovoltaic modules. Background Technology

[0002] Traditional photovoltaic (PV) modules mostly employ solder strip interconnect technology, which has low flexibility in its series-parallel structure and is susceptible to poor soldering and shading, leading to significant power degradation. Since 1990, shingled series technology has improved design flexibility and demonstrated higher power generation efficiency through overlapping cell interconnection. However, existing shingled structures (such as conventional series or simple shingled strings) still suffer from defects such as poor soldering, shading, and cutting losses, thus requiring performance analysis of shingled PV modules.

[0003] In existing technologies, the analysis of solder joint defects in shingled modules mainly relies on microscopic inspection methods such as X-ray flaw detection and infrared thermography to identify interlayer solder joint sites. This is combined with current-voltage characteristic (IV curve) testing to compare the electrical performance differences between normal and abnormal modules, quantifying the series resistance loss caused by solder joint defects. For shading analysis, power attenuation patterns under different shading locations and areas are simulated by artificially shading local areas of the module, supplemented by a hot spot detector to monitor the temperature rise in the shading area. These experimental methods have the following drawbacks: high sample preparation cost, long testing cycle, inability to accurately reproduce the unstable characteristics of actual contact resistance, and the real-world conditions of non-uniform shading. Furthermore, extreme testing conditions can easily cause permanent damage to the modules.

[0004] There is currently no effective solution to the problems of high cost and insufficient testing accuracy in photovoltaic module performance analysis in related technologies. Summary of the Invention

[0005] The present invention provides a method for simulating the performance of a staggered shingled photovoltaic module, which at least solves the problems of high cost and insufficient accuracy in photovoltaic module performance analysis.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] The first aspect of this invention provides a method for simulating the performance of a staggered shingled photovoltaic module, comprising the following steps: virtually networking multiple first simulation models corresponding to multiple individual cells according to the series-parallel connection rules and inter-cell overlap constraints of the staggered shingled structure to obtain a second simulation model of the cell string; wherein the first simulation model is built based on the performance parameters of the corresponding individual cells and the equivalent circuit topology of the photovoltaic cells; virtually networking the multiple second simulation models according to the topology of the cell string in the photovoltaic module to obtain a third simulation model of the photovoltaic module; simulating the defective state and normal operating state of the photovoltaic module by adjusting the target parameters of the third simulation model; wherein the target parameters include the target parameters of the first simulation model and the target parameters of the second simulation model related to the defective state; and calculating the performance indicators of the photovoltaic module corresponding to the defective state and normal operating state based on the current-voltage characteristic simulation parameters output by the third simulation model under the corresponding target parameters.

[0008] Preferably, before virtually networking multiple first simulation models corresponding to multiple individual solar cells according to the series-parallel connection rules of the staggered shingled structure and the overlap constraint between cells, the method includes the following steps: collecting performance parameters of each individual solar cell; wherein, the individual solar cell is a multi-specification slice cut to fit the staggered shingled structure; the performance parameters include the geometric dimension parameters, electrical performance characteristic parameters, and composite current density parameters corresponding to the cutting process of the solar cell; building each first simulation model corresponding to each individual solar cell in the simulation environment based on the equivalent circuit topology of the photovoltaic cell dual diode; optimizing the first model parameters of the first simulation model based on the corresponding performance parameters and the first measured volt-ampere characteristic parameters of the individual solar cell; wherein, the first measured volt-ampere characteristic parameters are the parameters obtained by the individual solar cell through volt-ampere testing.

[0009] Preferably, the process involves virtually networking multiple first simulation models corresponding to multiple individual cells according to the series-parallel connection rules of a staggered shingled structure and the overlap constraints between cells to obtain a second simulation model of a cell string. This includes the following steps: Firstly, in the simulation environment, multiple first simulation models corresponding to multiple individual cells are virtually networked according to the series-parallel connection rules of a staggered shingled structure and the parameter constraints corresponding to the overlap between cells to obtain a second simulation model of a cell string; secondly, based on the performance parameters corresponding to each individual cell and the second measured volt-ampere characteristic parameters of the cell string, the second model parameters of the second simulation model are optimized; wherein the second measured volt-ampere characteristic parameters are cell string parameters derived based on the first measured volt-ampere characteristic parameters.

[0010] Preferably, according to the topology of the cell strings in the photovoltaic module, multiple second simulation models are virtually networked to obtain a third simulation model of the photovoltaic module, including the following steps: Multiple cell string models are networked according to the first topology between the various cell strings in the photovoltaic module; wherein, the first topology includes: a fully series structure and a series-parallel hybrid structure; based on the first topology and the second topology between the cell strings and bypass diodes, an appropriate number of bypass diodes are connected in anti-parallel to the corresponding cell strings to form the third simulation model of the photovoltaic module.

[0011] Preferably, the third simulation model of the photovoltaic module is formed by connecting an appropriate number of bypass diodes in anti-parallel with the corresponding cell strings, including the following steps: when the first topology is a fully series connection, two or three bypass diodes are connected in anti-parallel with the corresponding cell strings to form the third simulation model of the photovoltaic module; when the first topology is a fully parallel connection, two bypass diodes are connected in anti-parallel with the corresponding cell strings to form the third simulation model of the photovoltaic module.

[0012] Preferably, simulating the defective state and normal operating state of a photovoltaic module by adjusting the target parameters of the third simulation model includes the following steps: simulating the normal operating state of the photovoltaic module by adjusting the target parameters of the third simulation model to preset standard values; wherein the target parameters include: the equivalent series resistance of the second simulation model and the photocurrent of the first simulation model; simulating the welding failure state of the photovoltaic module by increasing the equivalent series resistance corresponding to the target cell string; and simulating the reduced irradiance state caused by shading of the photovoltaic module by decreasing the photocurrent corresponding to the target cell.

[0013] Preferably, simulating a welding defect fault state of a photovoltaic module by increasing the equivalent series resistance corresponding to the target cell string includes the following steps: based on simulation requirements, a second simulation model corresponding to the target cell string with welding defect risk is preset in the third simulation model; an additional equivalent series resistance is added to the second simulation model to increase the equivalent series resistance of the target cell string; the resistance value of the additional equivalent series resistance is adjusted according to the severity of the welding defect to match the fault level corresponding to different contact resistances.

[0014] Preferably, by reducing the photocurrent corresponding to the target solar cell to simulate the reduced irradiance state caused by shading of the photovoltaic module, the method includes the following steps: based on simulation requirements, in the second simulation model corresponding to the third simulation model, a first simulation model corresponding to the target solar cell with shading risk is preset, as well as the proportion of shadow coverage area in the target solar cell; based on the proportion of shadow coverage area, combined with the standard irradiance and the irradiance of the shadow area, the reduction ratio of the photocurrent is determined; based on the reduction ratio, the photocurrent of the first simulation model corresponding to the target solar cell is adjusted to simulate the reduced irradiance state caused by shading of the photovoltaic module.

[0015] Preferably, the calculation of the performance indicators of the photovoltaic module under the defective state and normal operating state based on the simulated volt-ampere characteristics output by the third simulation model under the corresponding target parameters includes the following steps: inputting the target parameters corresponding to the normal operating state and defective state into the third simulation model; using the simulated volt-ampere characteristics output by the third simulation model; wherein the simulated volt-ampere characteristics include any one or more of open-circuit voltage, short-circuit current, maximum power point voltage, and maximum power point current; deriving the corresponding performance indicators based on the simulated volt-ampere characteristics; the performance indicators include any one or more of maximum power, fill factor, and power decay rate.

[0016] A second aspect of the present invention provides an electronic device, comprising: a processor, and a memory storing a program, the program including instructions that, when executed by the processor, cause the processor to perform the method described above.

[0017] Compared with the prior art, the above-described technical solution of the present invention has the following advantages:

[0018] This invention provides a method for simulating the performance of a staggered shingled photovoltaic module. A first simulation model, constructed based on the equivalent circuit topology of the photovoltaic cell and the performance parameters of individual cells, provides an accurate and reliable foundation for subsequent string and module-level performance simulations. A second simulation model is built by creating a virtual network based on the series-parallel connection rules and inter-cell overlap constraints of the staggered shingled structure. This second simulation model leverages the advantages of the staggered shingled structure itself—optimized current transmission paths between cells and stable current conduction—to possess analytical capabilities against solder joint defects and local shading. It can accurately reproduce the unstable contact resistance caused by solder joint defects and the current distribution patterns under local shading, overcoming the shortcoming of related technologies where experiments struggle to replicate the unique anti-interference characteristics of shingled structures. By integrating multiple second simulation models based on the topology of the cell strings in the photovoltaic module, a complete module-level simulation system is constructed. By adjusting the target parameters of the associated first and second simulation models, various operating conditions such as normal module operation, poor soldering defects, and non-uniform shading can be flexibly simulated. The entire process does not require physical sample preparation or manual operation, solving the problems of high sample preparation cost and long testing cycle. It realizes accurate quantitative analysis of the performance of staggered shingled photovoltaic modules under different states, and significantly improves the accuracy, economy and safety of performance analysis. Attached Figure Description

[0019] To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention, and those skilled in the art can obtain other embodiments based on these drawings without creative effort.

[0020] Figure 1 This is a schematic flowchart illustrating a method for simulating the performance of a staggered shingled photovoltaic module, according to an embodiment of the present invention.

[0021] Figure 2 This is a diagram of the equivalent circuit topology of a photovoltaic cell with dual diodes, according to an embodiment of the present invention.

[0022] Figure 3 This is a schematic diagram of the structure of a conventional battery cell string (sub-string a) according to an embodiment of the present invention.

[0023] Figure 4 This is a schematic diagram of the structure of a shingled battery cell string (sub-string b) according to an embodiment of the present invention.

[0024] Figure 5 This is a schematic diagram of the structure of a staggered shingled solar cell string (sub-string c) according to an embodiment of the present invention.

[0025] Figure 6 This is a topology diagram of a component d composed of conventional battery cell strings, according to an embodiment of the present invention.

[0026] Figure 7 This is a topology diagram of component e, which is composed of shingled battery cell strings, according to an embodiment of the present invention.

[0027] Figure 8 This is a topological diagram of a string f composed of staggered shingled solar cells, according to an embodiment of the present invention.

[0028] Figure 9 This is a topological diagram of a string g composed of staggered shingled solar cells, according to an embodiment of the present invention.

[0029] Figure 10 This is a topological diagram of a string h composed of staggered shingled solar cells, according to an embodiment of the present invention.

[0030] Figure 11 This is a schematic diagram of the structure of substring a in the No.1 occlusion state according to an embodiment of the present invention.

[0031] Figure 12 This is a schematic diagram of the structure of substring b in the No.1 occlusion state according to an embodiment of the present invention.

[0032] Figure 13 This is a schematic diagram of the first structure of substring c in the No.1 occlusion state according to an embodiment of the present invention.

[0033] Figure 14 This is a schematic diagram of the second structure of substring c in the No.1 occlusion state, which is an embodiment of the present invention.

[0034] Figure 15 This is a schematic diagram of the structure of substring a in the No.2 occlusion state of an embodiment of the present invention.

[0035] Figure 16 This is a schematic diagram of the structure of substring b in the No.2 occlusion state according to an embodiment of the present invention.

[0036] Figure 17 This is a schematic diagram of the third structure of substring c in the No.2 occlusion state according to an embodiment of the present invention.

[0037] Figure 18 This is a schematic diagram of the fourth structure of substring c in the No.2 occlusion state according to an embodiment of the present invention.

[0038] Figure 19 This is a schematic diagram of the structure of the electronic device created by this invention. Detailed Implementation

[0039] Embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. While some embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of protection of the present invention.

[0040] Compared to ribbon interconnect technology, shingled series technology offers greater flexibility in the design of series and parallel module structures. The staggered shingled structure first appeared in a 1990 literature report, where the authors conducted IV tests (Current-Voltage Test) on modules with different structures using experimental samples, and found that shingled structure modules have a higher module power generation efficiency advantage.

[0041] However, the shingled structure in related technologies still has the following drawbacks:

[0042] (1) Poor soldering defects: Poor soldering increases the equivalent series resistance and causes power loss. 50% of poor soldering results in a 1.59% power decay per cell and a 0.63% decrease in FF (Fill Factor). At the module level, the power decay is significant when the fully series structure is affected by poor soldering.

[0043] (2) Shading: Local shading leads to a decrease in photocurrent, resulting in severe power attenuation in conventional series structures. Although bypass diodes can alleviate some of the losses, their effect is limited when the number of diodes is insufficient.

[0044] (3) Cutting loss: Laser cutting of solar cells introduces edge recombination current, increases dark saturation current density, and reduces open circuit voltage and fill factor. For small-area solar cells (such as 1 / 5 cells), the perimeter ratio of the cut increases, and the edge loss is more obvious.

[0045] In related technologies, most performance analysis methods for shingled structures are based on experimental means, which have the problems of high cost and insufficient testing accuracy in photovoltaic module performance analysis.

[0046] To address the above problems, embodiments of the present invention provide a method, equipment, medium, and program product for simulating the performance of staggered shingled photovoltaic modules.

[0047] Among them, such as Figure 1 As shown, the embodiment of the present invention provides a method for simulating the performance of a staggered shingled photovoltaic module, which includes the following steps S1 to S4.

[0048] Step S1: The multiple first simulation models corresponding to multiple single cells are virtually networked according to the series and parallel connection rules of the staggered shingled structure and the overlap constraint between cells to obtain the second simulation model of the cell string; wherein, the first simulation model is built based on the performance parameters of the corresponding single cell and the equivalent circuit topology of the photovoltaic cell.

[0049] Step S2: Based on the topology of the cell strings in the photovoltaic module, multiple second simulation models are virtually networked to obtain the third simulation model of the photovoltaic module.

[0050] Step S3: Simulate the defect state and normal operation state of the photovoltaic module by adjusting the target parameters of the third simulation model; wherein, the target parameters include the target parameters of the first simulation model and the target parameters of the second simulation model related to the defect state.

[0051] Step S4: Based on the simulated parameters of the volt-ampere characteristics output by the third simulation model under the corresponding target parameters, calculate the performance indicators of the photovoltaic module under defective and normal operating conditions.

[0052] like Figure 3 As shown, the conventional cell string structure (substring a) uses full-area complete cells, and multiple complete cells are connected in series by solder ribbons. That is, the front electrode of the previous cell and the back electrode of the next cell are electrically connected by solder ribbons.

[0053] like Figure 4 As shown, the shingled solar cell string structure (substring b) uses solar cells cut into uniform shapes and sizes. Figure 4 Taking 10 cut solar cells of 1 / 5 area as an example, conductive adhesive is used to directly connect the front edge of the solar cell to the back edge of the next cell. Figure 4 Taking an overlap area width of 1mm as an example, this achieves solder-free series connection, which eliminates solder strip obstruction, reduces series resistance loss, improves component current output and power density, and increases contact area to reduce hot spot risk.

[0054] like Figure 5 As shown, the staggered shingled structure (sub-string c) is composed of solar cells cut into different areas. Figure 5 (Taking 1 / 2 and 1 / 4 area cut solar cells as examples) The structure consists of staggered and interleaved layers. The connection method is to achieve electrical connection in the staggered and overlapping areas using conductive adhesive. First, cut solar cells of different areas are connected in series to form sub-strings according to the staggered stacking rule. Figure 5 Taking an overlap area width of 1mm as an example, the substrings are then connected in parallel as needed to obtain the complete string.

[0055] Because the staggered shingled structure is formed by overlapping and interleaving cut pieces of different areas, the stress concentration points of the module under external force are dispersed through the staggered and interleaved stacking of cut pieces of different areas, avoiding the linear stress transmission of traditional aligned shingled structures. This reduces stress concentration and improves the mechanical strength of the module (wind resistance, snow pressure resistance). The staggered layout of cut pieces of different areas makes the current transmission path within the string more uniform, adapts to the electrical characteristics of cut pieces of different sizes, reduces local current congestion and mismatch, optimizes current distribution, reduces local heating and hot spot effects, and improves reliability and power generation efficiency under complex operating conditions.

[0056] The series-parallel connection rule of the staggered shingled structure is that the solar cells are first connected in series to form sub-strings in a staggered stacking manner, and then multiple sub-strings are connected in parallel (or the series-parallel combination is adjusted as needed) to ensure that the current is evenly distributed within the string.

[0057] Inter-cell overlap constraint refers to the width / area limitation of the overlapping area of ​​adjacent cells. It is necessary to ensure connection reliability and conductivity, and avoid poor contact due to insufficient overlap or waste of effective light-receiving area due to excessive overlap. Specifically, it is preferable to set the width of the overlapping area to 1mm to balance contact reliability and area utilization.

[0058] The performance parameters of a single solar cell, including short-circuit current (Isc), open-circuit voltage (Voc), fill factor (FF), conversion efficiency (η), series resistance (Rs), parallel resistance (Rsh), dark saturation current (Io), and photocurrent (Iph), reflect the cell's power generation capacity and electrical characteristics.

[0059] The equivalent circuit topology of a photovoltaic cell is a model that uses circuit elements to simulate the working characteristics of a photovoltaic cell. Common models include a single diode model (composed of a photocurrent source, a diode, a series resistor, and a parallel resistor) and a double diode model (adding a diode to account for composite current). Specifically, it includes a current source (simulating photocurrent), a diode (simulating the forward characteristics of a PN junction), a series resistor (simulating material / contact resistance), and a parallel resistor (simulating leakage current).

[0060] The process of constructing the first simulation model of a single cell is as follows: Based on the performance parameters of the single cell, select the equivalent circuit topology of a single diode / dual diode, substitute the parameters into the circuit equation (such as the IV relationship formula of the single diode model), establish a mathematical model and transform it into a circuit model in the simulation software. This model can accurately simulate the volt-ampere characteristics of a single cell under different illumination and temperature, providing an accurate unit model for string and component-level simulation and improving the overall simulation accuracy.

[0061] The process of constructing the second simulation model is as follows: First, obtain the first simulation model of each single cell. Then, according to the series and parallel connection rules of staggered shingled cells, virtually connect the cells in a staggered stacking manner (satisfying the overlap constraint between cells and ensuring that the conductive connection in the overlapping area meets the design) to form a single cell string. If the string contains multiple sub-strings, then virtually connect the sub-strings in parallel to finally obtain the second simulation model of the cell string.

[0062] Step S1 provided in the embodiment of the present invention obtains a second simulation model of the cell string by networking the first simulation model of the single cell according to the series and parallel connection rules of staggered shingled structure and the overlap constraint. This can accurately reflect the electrical connection characteristics and current distribution of the staggered shingled structure, providing an accurate string unit model for subsequent module-level simulation, improving the realism and reliability of module performance simulation, and laying the foundation for defect state research and design optimization.

[0063] The topology of cell strings in photovoltaic modules includes the series and parallel combination of multiple cell strings. Specifically, in staggered shingled structures, multiple sets of staggered sub-strings containing cut pieces of different areas (such as sub-strings composed of 1 / 2 or 1 / 4 area pieces) are first connected in series, and then the sub-strings after multiple series connections are connected in parallel, or multiple sets of staggered sub-strings are directly connected in parallel to form a complete module electrical topology.

[0064] To realistically simulate the fault tolerance and hot spot suppression performance of photovoltaic modules, bypass diodes can be added to the cell strings. The technical effect is that when a cell string experiences current mismatch due to shading or a fault, the bypass diode conducts, providing a shunt path for the faulty substring, preventing the substring from becoming a load and being reverse-broken down and generating heat, thereby suppressing the hot spot effect, protecting the module and maintaining the overall output power.

[0065] The preferred connection method between the bypass diode and the corresponding cell string is as follows: A bypass diode is connected in reverse parallel to the corresponding cell string (substring), that is, the positive terminal of the diode is connected to the negative output terminal of the substring, and the negative terminal is connected to the positive output terminal of the substring, so as to realize independent bypass protection when a single substring fails.

[0066] The construction process of the third simulation model of photovoltaic module is as follows: According to the topology of the cell string in the photovoltaic module, when multiple second simulation models are virtually networked, firstly, according to the series and parallel connection rules of the module topology, multiple sets of second simulation models are virtually connected in series / parallel. Then, the simulation model of the bypass diode is connected in reverse parallel to the output terminal of the corresponding second simulation model according to the preferred connection method. Finally, all sub-strings and bypass diode models are connected through electrical nodes to form a complete third simulation model of photovoltaic module.

[0067] Step S2 of this invention involves virtually networking multiple battery cell strings according to the component topology and introducing a bypass diode model to construct a third simulation model that closely resembles the electrical characteristics of a real component. This model can accurately reflect the electrical interaction between sub-strings, fault tolerance mechanisms, and hot spot suppression effects, providing a highly reliable component-level simulation carrier for subsequent simulations of defective and normal operating states, thereby improving the realism and engineering practicality of the overall performance simulation.

[0068] The target parameters of the first simulation model related to defects include the photocurrent and dark saturation current parameters of a single cell, which reflect the deterioration of the electrical performance or physical damage of the single cell.

[0069] The target parameters of the second simulation model related to defects include equivalent series resistance, substring current mismatch, contact resistance anomaly, and bypass diode conduction threshold offset, which reflect string-level defects such as cell connection failures, current imbalances, or bypass diode failures within the string.

[0070] The defective state of a photovoltaic module refers to an abnormal operating state in which the performance of the cells, strings, or connecting components within the module deteriorates, is physically damaged, or is subject to external interference, resulting in a decrease in power generation performance and a reduction in reliability. This includes poor welding fault states and shading states.

[0071] The normal state of a photovoltaic module refers to a stable working state in which all components of the module are in their designed rated operating conditions, there are no welding defects or shading, and the electrical performance and mechanical structure meet the design standards.

[0072] When adjusting the target parameters of the third simulation model to simulate the normal and defective states of photovoltaic modules, the normal state requires setting the parameters such as photocurrent and parallel resistance of all first simulation models to the rated values ​​under uniform illumination. At the same time, the parameters such as the equivalent series resistance and sub-string current mismatch of the second simulation model are adjusted to the rated range with no connection loss, and the bypass diode is kept in the off state.

[0073] When simulating welding defects, the parameters of the first simulation model are kept unchanged, while the equivalent series resistance of the second simulation model is increased and the abnormal value of the contact resistance is increased in a targeted manner, so as to reproduce the transmission loss caused by poor soldering of the solder strip and poor contact of the conductive adhesive.

[0074] When simulating the shading defect state, the photocurrent of the first simulation model of the single cell in the corresponding area is reduced according to the shading range and intensity, while the other parameters of the first simulation model are kept at the rated value. Then, the substring current mismatch of the second simulation model is finely adjusted to reproduce the current imbalance caused by shading. Finally, through the above different parameter adjustment strategies, high-fidelity simulations of the normal state of the component, the welding failure state, and the shading state are realized in the third simulation model respectively.

[0075] Step S3 of this invention, by adjusting the defect parameters of individual cells and strings in a layered manner and combining the dynamic response of bypass diodes, achieves high-fidelity simulation of normal and defective states of photovoltaic modules. It can accurately reproduce the current-voltage characteristics and hot spot suppression mechanism under fault conditions, providing a reliable simulation basis for the analysis of the impact of defects on module performance and the verification of fault diagnosis algorithms, and improving the accuracy and efficiency of module performance evaluation under defect scenarios.

[0076] The process of the third simulation model outputting the volt-ampere characteristic simulation parameters under the corresponding target parameters is as follows: Based on the established component-level third simulation model, the set target parameters are input, and the corresponding output current values ​​under different voltage conditions are solved through simulation calculations to generate complete volt-ampere (IV) characteristic curves, and key volt-ampere characteristic simulation parameters such as open-circuit voltage, short-circuit current, and maximum power point voltage and current are extracted.

[0077] The process of calculating photovoltaic module performance indicators based on current-voltage characteristic simulation parameters is as follows: The open-circuit voltage (Voc), short-circuit current (Isc), maximum power point voltage (Vm), and maximum power point current (Im) are extracted from the output current-voltage characteristic simulation parameters, and the fill factor is calculated using the formula. Maximum power The core performance indicators, such as conversion efficiency, were statistically analyzed under normal conditions, welding defects, and shadowing defects to complete the quantitative calculation of performance indicators under different working conditions.

[0078] Step S4 provided in the embodiment of the present invention calculates the performance index of the volt-ampere characteristic parameters output by the third simulation model, which can accurately quantify and compare the difference in power generation performance between the normal state of the photovoltaic module and the defective state such as poor welding and shading. It clarifies the degree of influence of different defects on the core indicators such as module power and efficiency, and provides data support for defect impact assessment, design optimization and fault diagnosis of staggered shingled photovoltaic modules, thereby enhancing the engineering application value of the performance simulation method.

[0079] In summary, the performance simulation method for staggered shingled photovoltaic modules provided by the embodiments of the present invention provides an accurate and reliable basis for subsequent string and module-level performance simulation by using the equivalent circuit topology of photovoltaic cells and the performance parameters of individual cells.

[0080] By constructing a virtual network based on the series and parallel connection rules and inter-cell overlap constraints of the staggered shingled structure, a second simulation model is built. This model combines the advantages of the staggered shingled structure itself, such as optimizing the current transmission path between cells and ensuring the stability of current conduction. As a result, the second simulation model has the ability to analyze and resist solder joint defects and local shading. It can accurately reproduce the unstable contact resistance caused by solder joint defects and the current distribution law under local shading, thus making up for the shortcoming of experimental replication of the unique anti-interference characteristics of shingled structures in related technologies.

[0081] By integrating multiple second simulation models based on the topology of the cell strings in the photovoltaic module, a complete module-level simulation system is constructed. By adjusting the target parameters of the associated first and second simulation models, various operating conditions such as normal module operation, poor soldering defects, and non-uniform shading can be flexibly simulated. The entire process does not require physical sample preparation or manual operation, solving the problems of high sample preparation cost and long testing cycle. It realizes accurate quantitative analysis of the performance of staggered shingled photovoltaic modules under different states, and significantly improves the accuracy, economy and safety of performance analysis.

[0082] Furthermore, the method provided in this embodiment of the invention includes the following steps before step S1: collecting performance parameters of each individual cell; wherein, the individual cell is a multi-specification slice cut to fit a staggered shingled structure; the performance parameters include the geometric dimensions of the cell, electrical performance characteristics, and composite current density parameters corresponding to the cutting process; based on the equivalent circuit topology of the photovoltaic cell dual diode, building each first simulation model corresponding to each individual cell in a simulation environment; optimizing the first model parameters of the first simulation model based on the corresponding performance parameters and the first measured current-voltage characteristic parameters of the corresponding individual cell; wherein, the first measured current-voltage characteristic parameters are parameters obtained by the individual cell through current-voltage testing.

[0083] Single-cell cells, using full-area cells (e.g., 15.8cm×15.8cm cells) as the substrate, are laser-cut into multi-specification slices suitable for staggered shingled structures. Common cutting areas are 1 / 2 (e.g., 15.8cm×7.9cm), 1 / 4 (e.g., 7.9cm×7.9cm), and 1 / 5 (e.g., 15.8cm×3.16cm). During adaptation, slices of different areas are staggered and interleaved according to the staggered shingled series and parallel connection rules, ensuring that the overlap between slices meets the constraints (e.g., the overlap area width between slices is 1mm) for conductive adhesive connection. By mixing series and parallel connections to form sub-strings, the requirements for stress dispersion due to structural misalignment are met, and the electrical characteristics of different slices are adapted to achieve current matching.

[0084] Geometric parameters, including the length, width, and effective light-receiving area of ​​the solar cell, as well as the cutting surface area (Ap), laser cutting edge perimeter (Lp), and front surface metallization area (Am), reflect the physical morphology of the slice, the light-receiving range, and the structural characteristics brought about by the cutting process.

[0085] Electrical performance characteristics parameters, including photocurrent, equivalent series resistance, equivalent parallel resistance, dark saturation current, open-circuit voltage, short-circuit current, maximum power point voltage, maximum power point current, maximum power, fill factor, thermal voltage, and diode ideality factor, comprehensively characterize the power generation capacity and electrical operating characteristics of the wafer.

[0086] The recombination current density parameters corresponding to the cutting process, including diffusion current-related parameters (including surface recombination current, metal contact recombination current, and cut edge recombination current) and depletion region recombination current-related parameters (including intrinsic recombination current in the depletion region and depletion region recombination current in the cut edge), accurately reflect the impact of laser cutting on carrier recombination in solar cells.

[0087] like Figure 2 As shown, the equivalent circuit topology of a photovoltaic cell with two diodes consists of a photocurrent source (Iph) and two parallel diodes (corresponding to the diffusion current I, respectively). D1 Composite current I D2 The equivalent series resistance (Rs), equivalent parallel resistance (Rsh), and output terminals (Vout, Iout) of a photovoltaic cell are combined. Compared with the single diode model, the dual-diode equivalent circuit topology of a photovoltaic cell can more accurately fit the measured IV curve, effectively consider the edge recombination loss caused by cutting, comprehensively characterize the nonlinear electrical characteristics of the cell, and improve the accuracy of single cell simulation.

[0088] The simulation environment refers to the software platform and module tools used to build and run simulation models. It can be constructed using MATLAB / Simulink software in conjunction with the Simscape Electrical module database, providing support for the construction of equivalent circuit models, parameter iterative calculations, and IV characteristic simulations.

[0089] The first measured current-voltage characteristic parameters were obtained by performing IV tests on single cells (including normal and poorly soldered states) under standard irradiance (Gref) and standard temperature conditions. The output current under different voltages was collected by the test equipment to generate measured IV curves, from which key characteristic parameters such as open circuit voltage (Voc), short circuit current (Isc), maximum power point voltage (Vm), maximum power point current (Im), maximum power (Pm), and fill factor (FF) were extracted.

[0090] The process of optimizing the first model parameters of the first simulation model is as follows: taking the equivalent circuit formula of dual diodes as the core, the geometric dimensions, electrical performance, composite current density and other parameters of a single cell are substituted into the first simulation model. Combined with the measured volt-ampere characteristic parameters, the first model parameters in the model are adjusted through an iterative algorithm so that the fitting degree between the simulated output IV curve and the measured curve meets the first preset requirement, thereby eliminating the performance deviation between the theoretical model and the actual cell and achieving accurate calibration of the model parameters.

[0091] The preferred formula for the equivalent circuit of a dual diode is:

[0092] .

[0093] In the formula, This refers to the external output current of the battery cell; This is the photocurrent, which is usually approximately equal to the short-circuit current Isc; This is the first dark saturation current, corresponding to the diffusion current mechanism, caused by the diffusion recombination behavior of carriers in the semiconductor base region and emitter region. The second dark saturation current corresponds to the depletion region recombination current mechanism, and the edge recombination loss caused by laser cutting will increase its value. This refers to the output voltage of the solar cell; This is the equivalent series resistance; For the first diode ideality factor, corresponding to The diffusion current characteristic is set to 1; For the ideality factor of the second diode, corresponding to The depletion region recombination current characteristic is set to 2; Thermoelectric voltage; It is the equivalent parallel resistance.

[0094] , , , , , , These are all the first model parameters of the first simulation model.

[0095] The preferred first requirement is that the error between the simulated IV curve and the measured IV curve does not exceed 6%, ensuring that the model fit meets the engineering application requirements for performance simulation of staggered shingled structures and can support subsequent horizontal performance comparison analysis under different defect scenarios.

[0096] The method provided in the embodiments of this invention collects the geometric dimensions, electrical properties, and cutting-related composite current density parameters of multi-specification cut slices adapted to staggered shingled structures. Based on the dual-diode equivalent circuit, an initial model is built in MATLAB / Simulink. Then, the model parameters are optimized by combining measured volt-ampere characteristic parameters. This constructs a high-fidelity single-cell simulation model that closely matches the actual cutting loss and electrical characteristics. This provides an accurate and reliable unit foundation for subsequent staggered shingled string networking, module defect simulation, and performance evaluation, ensuring the authenticity and engineering applicability of the overall simulation method.

[0097] Furthermore, step S1 in the method provided by the present invention preferably includes the following steps: taking multiple first simulation models corresponding to multiple single cells, and forming a virtual topology network in a simulation environment according to the series and parallel connection rules of the staggered shingled structure and the parameter constraints corresponding to the overlap between cells, to obtain a second simulation model of the cell string; optimizing the second model parameters of the second simulation model based on the performance parameters corresponding to each single cell and the second measured volt-ampere characteristic parameters of the cell string corresponding to the cell string; wherein, the second measured volt-ampere characteristic parameters are the cell string parameters derived based on the first measured volt-ampere characteristic parameters.

[0098] Specifically, the second model parameters of the second simulation model include the string equivalent series resistance, string equivalent parallel resistance, string total photogenerated current, string total dark saturation current, substring current mismatch, inter-chip contact resistance, bypass diode conduction threshold, total open-circuit voltage, total short-circuit current and other equivalent parameters characterizing the string electrical characteristics, and string-level composite current density equivalent parameters corresponding to the cutting process.

[0099] The second measured volt-ampere characteristic parameters include the total open-circuit voltage, total short-circuit current, total maximum power, total maximum power point voltage, total maximum power point current, and total fill factor of the cell string. During derivation, the individual cell electrical parameters are first adjusted according to the staggered shingled series-parallel connection rules and the cutting specifications of the cells (e.g., 1 / 2, 1 / 4, 1 / 5 area). For the series connection, the open-circuit voltages of the individual cells are summed, and the short-circuit current is minimized. For the parallel connection, the short-circuit currents of the individual cells are summed, and the open-circuit voltage is minimized. Then, combining the first measured volt-ampere characteristic parameters of each individual cell, the string-level equivalent parameters are derived using a mathematical model for silicon solar cell engineering based on a dual-diode equivalent circuit (considering the recombination loss at the cutting edge and the inter-cell contact loss), thus obtaining the second measured volt-ampere characteristic parameters.

[0100] The process of optimizing the second model parameters of the second simulation model is as follows: In the MATLAB / Simulink simulation environment, based on the string model derived from the staggered shingled string topology and the dual diode equivalent circuit, the geometric dimensions, composite current density, and other performance parameters of each individual cell, as well as the derived second measured volt-ampere characteristic parameters, are substituted. The least squares iterative algorithm is used to optimize in steps. First, the equivalent series resistance of the string and the inter-cell contact resistance are calibrated. Then, the sub-string current mismatch and the total dark saturation current are adjusted so that the string IV curve output by the second simulation model gradually matches the derived second measured IV curve until the second preset requirement is met, thus achieving accurate calibration of the string-level model.

[0101] The second preset requirement is that the error between the string current-voltage characteristic curve output by the second simulation model and the derived second measured current-voltage characteristic curve does not exceed 6%, of which the error in total maximum power and fill factor does not exceed 5%. This ensures that the string model can accurately reflect the series and parallel electrical characteristics, cutting losses and inter-cell connection effects of the staggered shingled structure, and meet the engineering accuracy requirements for subsequent component-level defect simulation and performance analysis.

[0102] The method provided by the embodiments of this invention, by combining a first simulation model of multi-specification cut single cells adapted to staggered shingled structures with overlap constraints and mixed-series parallel connection rules for networking, and deriving the equivalent parameters of the string based on the measured parameters of single cells, optimizes the parameters of the second model step by step. This enables the second simulation model to realistically reproduce the topological characteristics, cutting losses, inter-cell contact constraints, and electrical performance of staggered shingled strings. It effectively integrates the subtle characteristic differences at the single cell level with the macroscopic electrical response at the string level, improving the accuracy and reliability of string-level simulation. This lays a high-quality string unit foundation for subsequent component-level model building, defect state (poor welding, shadow occlusion) simulation, and performance evaluation, ensuring the engineering practicality of the overall simulation method and the accuracy of defect analysis.

[0103] Furthermore, step S2 in the method provided by the present invention preferably includes the following steps: connecting multiple cell string models in a network according to a first topology between the various cell strings in the photovoltaic module; wherein, the first topology includes: a fully series structure and a series-parallel hybrid structure; based on the first topology and a second topology between the cell strings and bypass diodes, connecting an appropriate number of bypass diodes to the corresponding cell strings in anti-parallel to form a third simulation model of the photovoltaic module.

[0104] Specifically, when networking multiple cell string models based on the first topology of the cell strings in the photovoltaic module (full series structure, series-parallel hybrid structure), it is necessary to first match the rated voltage and current parameters of each cell string to ensure that the overall electrical characteristics of the module after networking meet the design requirements.

[0105] The fully series structure allows for flexible adjustment of the number of series strings based on the target output voltage of the components. The hybrid series-parallel structure can balance the output voltage and current by adjusting the number of parallel branches in the series strings. It also adapts to the hybrid series-parallel characteristics of staggered shingled structures. When networking, it is necessary to ensure the electrical consistency of the node connections between strings. The networking sequence can be optimized according to the principle of string current balancing or voltage matching to avoid performance mismatch between strings.

[0106] When configuring bypass diodes based on the first and second topologies, the number of bypass diodes to be adapted needs to be determined in conjunction with the component protection level, the range of string fault impact, and the topology type. The connection method is anti-parallel connection to achieve the fault bypass function.

[0107] In the fully series structure, bypass diodes can be configured in groups according to the number of strings. In the series-parallel hybrid structure, bypass diodes can be configured independently for a single parallel branch or each series sub-string. Alternatively, they can be configured centrally by region according to the defect protection accuracy requirements. This ensures that when any cell string fails, the corresponding bypass diode can be turned on in time to isolate the faulty string, while not affecting the normal operation of other strings.

[0108] The above steps in the method provided by the embodiments of this invention, by combining the fully series and series-parallel hybrid topologies of the modules, network the cell string model with an appropriate number of bypass diodes according to the anti-parallel rule, and construct a third simulation model that fully reflects the electrical connection characteristics and fault tolerance mechanism of the photovoltaic module. It not only covers the flexible adaptability of different topologies, but also restores the hot spot suppression and fault protection functions of the module through the precise configuration of bypass diodes. This makes the third simulation model have a structure and performance characteristics close to those of the real module, providing a highly reliable simulation carrier for subsequent simulation of the module output characteristics under normal and defective conditions, and improving the comprehensiveness and engineering practicality of module-level performance simulation.

[0109] Furthermore, the method provided in the embodiments of the present invention, which connects an appropriate number of bypass diodes to the corresponding cell strings in antiparallel to form a third simulation model of the photovoltaic module, preferably includes the following steps: when the first topology is a fully series connection, connecting 2 or 3 bypass diodes to the corresponding cell strings in antiparallel to form a third simulation model of the photovoltaic module; when the first topology is a fully parallel connection, connecting 2 bypass diodes to the corresponding cell strings in antiparallel to form a third simulation model of the photovoltaic module.

[0110] Specifically, since faults in a fully series structure can easily propagate to the entire module, configuring two or three diodes can refine the protection unit and reduce power loss caused by faults. In a fully parallel structure, faults are relatively limited to local branches, and two diodes can achieve effective protection. The core function of bypass diodes—"normal cutoff and fault conduction"—is realistically reproduced. Performance simulations accurately replicate the current conduction and module protection processes when poor soldering or shading causes hot spots, making the simulation results closer to the actual fault response characteristics of the module and improving the accuracy of defect impact analysis.

[0111] Furthermore, such as Figure 8 As shown, the staggered shingled structure (sub-string c) is connected in series, that is, six sub-strings c, which are composed of 1 / 2 and 1 / 4 area cut solar cells connected in series and parallel, are connected in series. Then, two bypass diodes are connected in anti-parallel to the two ends of the two groups of sub-strings formed by the first three sub-strings c and the last three sub-strings c, respectively, to form component f. The fault protection range and cost are balanced by the grouped bypass design, which is adapted to the electrical characteristics of the fully series structure.

[0112] like Figure 9 As shown, the staggered shingled structure (sub-string c) is connected in series, that is, six sub-strings c, which are composed of 1 / 2 and 1 / 4 area cut solar cells connected in series and parallel, are connected in series in sequence. Then, three bypass diodes are connected in anti-parallel to the two ends of each group of two sub-strings c to form the module g. Compared with the configuration of two diodes, the bypass protection unit is refined, which further reduces the impact of single sub-string failure on the overall performance of the module.

[0113] like Figure 10 As shown, the staggered shingled structure (sub-string c) is connected in a series-parallel hybrid configuration. First, multiple sub-strings c are connected in series to form three series branches. Then, the three series branches are connected in parallel. Finally, two bypass diodes are connected in anti-parallel to the two ends of two of the core series branches to form component e. This component adapts to the current distribution characteristics of the series-parallel hybrid structure. Bypass diodes isolate faulty branches and ensure normal power generation of the remaining branches.

[0114] The method provided by the embodiments of the present invention adapts to fully series, fully parallel, and series-parallel hybrid topologies, and specifically configures the number and connection method of bypass diodes to construct a third simulation model that fully restores the electrical topology and fault protection mechanism of staggered shingled modules. It accurately reproduces the hot spot suppression, power loss, and bypass diode response process under defective conditions, providing a high-fidelity simulation carrier for module performance simulation and defect impact analysis, and ensuring the reliability and engineering reference value of subsequent performance evaluation.

[0115] In addition, to conduct comparative analysis of subsequent photovoltaic module performance simulation, two typical control groups were added, with the following topologies: conventional cell string structure (substring a) full series topology and shingled cell string structure (substring b) multi-string parallel topology.

[0116] Specifically, such as Figure 6 As shown, the conventional battery cell string structure (substring a) is a fully serial topology, that is, six substrings a, each consisting of four full-area battery cells connected in series, are connected in series. Then, three bypass diodes are connected in anti-parallel to the two ends of each group of two substrings a (the positive terminal of the diode is connected to the negative output terminal of the corresponding substring group, and the negative terminal is connected to the positive output terminal of the corresponding substring group), forming component d.

[0117] like Figure 7 As shown, the shingled cell string structure (substring b) is connected in parallel with multiple strings. That is, the 12 substrings b, which are composed of 10 cells cut into 1 / 5 area in series, are divided into 2 groups, with 6 substrings b in each group connected in parallel. Then, two bypass diodes are connected in anti-parallel to the common output terminal of each group of parallel substrings b to form component e.

[0118] Based on the topology of these two control groups, corresponding photovoltaic module simulation models can be constructed. Subsequently, the simulation data of these two sets of simulation models will be compared and analyzed with the third simulation model of the staggered shingled structure photovoltaic module, providing a unified basis for comparison in subsequent performance research of photovoltaic modules with different structures.

[0119] Furthermore, step S3 in the method provided by the present invention preferably includes the following steps: simulating the normal working state of a photovoltaic module by adjusting the target parameters of the third simulation model to preset standard values; wherein, the target parameters include: the equivalent series resistance of the second simulation model and the photocurrent of the first simulation model; simulating the welding failure state of the photovoltaic module by increasing the equivalent series resistance corresponding to the target cell string; and simulating the reduced irradiance state caused by shading of the photovoltaic module by decreasing the photocurrent corresponding to the target cell.

[0120] Specifically, the preset standard values ​​need to match the cutting characteristics of each individual cell in the module, the inter-cell connection constraints, and the string topology requirements to ensure that the overall performance is consistent with the design expectations.

[0121] By locating the target cell string based on simulated demand, a second simulation model is introduced, which is a quantitative parameter of equivalent resistive loss related to welding defects. The value of this parameter is adjusted according to the severity of the defect to simulate the welding defect state of the photovoltaic module.

[0122] By locating the first simulation model corresponding to the target solar cell based on the simulated demand, and combining the quantification factors of the shadow effect (such as the shading range and intensity) and the difference in irradiance between the standard and the shaded area, the adjustment coefficient of the photocurrent is determined, and then the photocurrent parameters of the target solar cell are adjusted to simulate the state of reduced irradiance of the photovoltaic module due to shading.

[0123] The method provided by the embodiments of this invention achieves flexible and high-fidelity simulation of photovoltaic modules under normal working conditions, welding failure conditions, and reduced irradiance due to shading by targeted and quantitative adjustments to core parameters. This not only conforms to the topological characteristics and performance laws of staggered shingled structures but also maintains the universality and adaptability of the simulation scheme. It provides a comprehensive and reliable simulation basis for subsequent calculation of module performance indicators, analysis of performance differences under different conditions, and assessment of the impact of defects, ensuring the accuracy of subsequent performance research and its engineering reference value.

[0124] Furthermore, the method described above in the embodiments of the present invention, which simulates the welding failure state of a photovoltaic module by increasing the equivalent series resistance corresponding to the target cell string, preferably includes the following steps: based on simulation requirements, a second simulation model corresponding to the target cell string with welding failure risk is preset in the third simulation model; an additional equivalent series resistance is added to the second simulation model to increase the equivalent series resistance of the target cell string; the resistance value of the additional equivalent series resistance is adjusted according to the severity of the welding failure to match the failure level corresponding to different contact resistances.

[0125] Specifically, the process of pre-setting target cell strings includes: based on the string topology characteristics of staggered shingled structures (such as mixed series and parallel, full series) and inter-cell connection constraints (1mm overlap area, conductive adhesive contact characteristics), selecting target cell strings prone to welding defects in the third simulation model (prioritizing strings with dense inter-cell contact points, large operating current, or topological critical nodes), and locating their corresponding second simulation model to ensure that the selection of target strings conforms to the high incidence of welding defects in actual engineering.

[0126] An additional equivalent series resistance is added, that is, an equivalent resistive parameter corresponding to poor soldering is added to the second simulation model of the target string, namely, an additional equivalent series resistance. The essence of the equivalent series resistance is a quantitative characterization of the losses caused by poor soldering, such as increased contact resistance and failure of conductive adhesive. Its connection position corresponds one-to-one with the inter-chip connection nodes and conductive adhesive contact areas of the string to ensure consistency with the physical mechanism of actual faults.

[0127] The process of adjusting the resistance value to match the fault level is as follows: Based on the power attenuation law corresponding to different degrees of poor soldering (e.g., low power attenuation rate for slight poor soldering, high attenuation rate for severe poor soldering), a mapping relationship is established between the additional equivalent series resistance value and the severity of the soldering defect. Slight faults (e.g., local contact failure) correspond to smaller resistance values ​​(e.g., 10mΩ-50mΩ), moderate faults (e.g., partial conductive adhesive failure) correspond to medium resistance values ​​(e.g., 50mΩ-100mΩ), and severe faults (e.g., inter-chip connection breakpoints) correspond to larger resistance values ​​(e.g., above 100mΩ). By adjusting the resistance value, the string electrical response under different fault levels can be accurately reproduced.

[0128] The method provided by the embodiments of this invention targets specific cell strings with high rates of welding defects in staggered shingled structures, introduces additional equivalent series resistance to quantify fault losses, and flexibly adjusts the resistance value according to the severity of the fault. This achieves high-fidelity simulation of welding defect faults, accurately reproducing the electrical responses of the module under different fault levels, such as power attenuation and fill factor reduction. It also conforms to the topology and connection characteristics of staggered shingled structures, effectively reflecting the resistance of different string structures to welding defects. This provides reliable data support for module topology optimization, fault diagnosis, and performance evaluation, ensuring the engineering reference value of the simulation results.

[0129] Furthermore, the method provided in the embodiments of the present invention, which simulates the reduced irradiance state caused by shading of photovoltaic modules by reducing the photocurrent corresponding to the target solar cell, preferably includes the following steps: based on simulation requirements, in the second simulation model corresponding to the third simulation model, a first simulation model corresponding to the target solar cell with shading risk is preset, as well as the proportion of shadow coverage area in the target solar cell; based on the proportion of shadow coverage area, combined with the standard irradiance and the irradiance of the shadow area, the reduction ratio of the photocurrent is determined; based on the reduction ratio, the photocurrent of the first simulation model corresponding to the target solar cell is adjusted to simulate the reduced irradiance state caused by shading of photovoltaic modules.

[0130] Specifically, the process of presetting the target solar cell and the proportion of shadow coverage area is as follows: combining the cutting specifications of the solar cells in the staggered shingled structure (such as 1 / 2, 1 / 4, 1 / 5 area), the string topology layout (mixed series and parallel, all series) and the high-occurrence shading scenarios in actual applications, the target solar cells that are easily affected by shadows (such as solar cells at the edge of the module or at key positions in the light-receiving path) are located in the second simulation model corresponding to the third simulation model, and the corresponding first simulation model is determined; at the same time, the preset shadow coverage area proportion is quantified to cover different scenarios such as partial shading (such as 50% area shading) and large area shading (such as 100% area shading) to ensure consistency with the actual shading form.

[0131] The process of determining the reduction ratio of photocurrent is as follows: Based on the linear correlation between photocurrent and irradiance, the difference between the standard irradiance (Gref) and the actual irradiance (G) of the shaded area is used for weighted calculation, combined with a preset shaded coverage area ratio. For partial shading scenarios, an area averaging method is used to determine the equivalent irradiance of the target solar cell (i.e., the irradiance of the corresponding area is weighted and summed according to the area ratio of the shaded and unshaded areas). Then, the reduction ratio of photocurrent is derived using the formula Iph=G / Gref×Iph,ref. Here, Iph is the photocurrent of the target solar cell after shading, and Iph,ref is the reference photocurrent of the target solar cell under standard irradiance, ensuring a unique and accurate mapping relationship between the reduction ratio, irradiance attenuation, and shading area.

[0132] The process of adjusting the photocurrent of the target solar cell is as follows: In the first simulation model corresponding to the target solar cell, the photocurrent parameters are precisely adjusted according to the derived reduction ratio. During the adjustment process, other electrical performance parameters (such as equivalent series resistance and dark saturation current) are kept unchanged, focusing only on the impact of reduced irradiance on photoelectric conversion. At the same time, the photoelectric conversion logic is consistent with the dual-diode equivalent circuit model, ensuring that the overall electrical characteristics of the string after adjustment meet the series-parallel constraints of the staggered shingled structure.

[0133] The method provided in the embodiments of this invention achieves high-fidelity simulation of the state of reduced irradiance caused by shadow shading by accurately locating the target solar cell, quantifying the shadow coverage ratio, and deriving the adjustment ratio based on the correlation between irradiance and photocurrent. It not only accurately reproduces the core electrical responses of the module, such as power attenuation and current mismatch, under different degrees of shading, but also conforms to the cutting characteristics and string topology of staggered shingled structures. It can effectively reflect the resistance of different structures to shadow shading, providing reliable data support for module topology optimization, anti-shading design, and performance evaluation, and ensuring the engineering reference value of the simulation results.

[0134] Furthermore, step S4 in the method provided by the present invention preferably includes the following steps: inputting the target parameters corresponding to the normal working state and the defective state into the third simulation model; using the voltage-current characteristic simulation parameters output by the third simulation model; wherein, the voltage-current characteristic simulation parameters include any one or more of open-circuit voltage, short-circuit current, maximum power point voltage, and maximum power point current; deriving the corresponding performance indicators based on the voltage-current characteristic simulation parameters; the performance indicators include any one or more of maximum power, fill factor, and power attenuation rate.

[0135] Specifically, the target parameters for normal operation are the standard values ​​adapted to the component topology (all-series, series-parallel hybrid) and the design rated operating conditions, with core parameters including single-cell photocurrent and string equivalent series resistance. The target parameter for poor welding defects is the increased target string equivalent series resistance (quantifying increased contact resistance and other losses). The target parameter for shading defects is the target cell photocurrent adjusted according to the shading ratio (derived based on the linear correlation between irradiance and photocurrent). The input process must conform to the dual-diode equivalent circuit logic and component topology constraints of the third simulation model to ensure that the parameters are consistent with the electrical characteristics and physical mechanisms of the model.

[0136] After receiving the target parameters, the third simulation model uses iterative algorithms and circuit simulation calculations in the MATLAB / Simulink environment to output simulated parameters reflecting the volt-ampere characteristics of the component's electrical response. These parameters include open-circuit voltage (the terminal voltage of the component when there is no load), short-circuit current (the output current of the component when it is short-circuited), maximum power point voltage (the terminal voltage of the component when it outputs maximum power), and maximum power point current (the output current of the component when it outputs maximum power). Any one or more of these outputs can be selected according to the simulation requirements. The parameter output process accurately reproduces the nonlinear IV characteristics of the component under different states, consistent with the core parameter dimensions of actual IV testing, providing direct data support for the derivation of subsequent performance indicators.

[0137] Based on the output voltage-current characteristic simulation parameters, the derivation is completed using the core calculation formulas for photovoltaic module performance indicators. Specifically, maximum power is obtained by multiplying the maximum power point voltage and the maximum power point current; the fill factor is calculated as the ratio of maximum power to the product of open-circuit voltage and short-circuit current, reflecting the module's power conversion efficiency; and the power degradation rate is calculated as the ratio of the difference between the maximum power in the defective state and the maximum power in the normal state to the maximum power in the normal state, quantifying the impact of defects on the module's power generation capacity. Any one or more performance indicators can be derived according to the analysis requirements, and the results intuitively reflect the module's power generation performance and the degree of defect impact under different states, aligning with the core logic of performance comparison and defect assessment in the document.

[0138] The method provided by the embodiments of this invention, by inputting the target parameters of normal working state and defect state (poor welding, shadow occlusion) into a third simulation model that matches the topological characteristics of staggered shingled structure and the equivalent circuit logic of dual diodes, outputs the core current-voltage characteristic simulation parameters and derives key performance indicators such as maximum power and fill factor. This not only accurately quantifies the power generation capacity and defect impact of the components under different states, but also provides standardized and high-fidelity quantitative data support for the horizontal comparison of the performance of components with different structures, topology optimization design, and fault impact assessment, ensuring the engineering practicality and reliability of the simulation analysis results.

[0139] Furthermore, the following is a specific example of using the method of this invention to analyze the impact of poor solder joints on the IV performance of different components. A resistor is connected in series in the substring to simulate the poor solder joint phenomenon during the battery stringing process. To emphasize the impact of poor solder joints, the additional series resistor is set to 100 mΩ, which is larger than the measured impact of poor solder joint defects. The performance comparison between the substring sample containing poor solder joint defects and the normal sample is shown in Table 1.

[0140] Table 1. Simulated IV performance of normal substrings and soldered substrings.

[0141]

[0142] As shown in Table 1, comparing the three normally welded substrings, substring a has the largest effective light-receiving area, and therefore the highest Pm value. Substring c, being connected in a shingled configuration, has a 4 mm wide area covered by another cell, resulting in a loss of some effective light-receiving area, and its Pm value is somewhat lower than the former. However, due to the reduction in Rs, the FF is improved. Substring b has half the number of cells as the other two types of substrings, but its power is still less than half the power of the other two types of substrings. This is because more cell areas are overlapped and covered, and because the ratio of the cut perimeter to the area is larger, the edge recombination effect caused by the cut loss is more obvious, leading to a decrease in FF.

[0143] Analyzing the IV data of the poorly soldered substrings a and b, the poorly soldered substring b shows a smaller attenuation rate compared to the normal substring b. This is because the operating current of substring b is 5 times smaller than that of substring a. The smaller the original operating current at the point of poor soldering, the smaller the power loss. The same pattern can also be observed in the IV performance data of different poorly soldered areas of substring c.

[0144] Substring c has a similar operating current to substring a, but substring c has a mixed series-parallel structure, which results in a significantly smaller power loss due to solder joint defects compared to substring a. In subsequent component simulations, the solder joint defects in substring c are assumed to occur at the contact points of the half-cells, and these defective solder joints with greater impact are used as simulation data for defective substrings.

[0145] according to Figures 6 to 10 The component structure shown connects normal substrings. One of the substrings is then changed to a defective substring. Substituting this into the data in Table 1 yields the component simulation data in Table 2.

[0146] Table 2 Simulated IV Performance of Normal Components and Components with Solder Failures

[0147]

[0148] As shown in Table 2, Pm is the maximum value in the table under normal conditions for component d. However, the poor solder joint has a significant impact on substring a, resulting in a large decrease in Pm and FF for component d and component g, even though their substring arrangements are similar.

[0149] Components f and g have the same substring arrangement, differing only in the number of diodes. Therefore, under normal conditions, the number of bypass diodes has virtually no impact on the module's IV performance. However, after replacing the substring with the defective solder joint, module g, with more bypass diodes, exhibits lower maximum power decay and a higher flyback factor (FF).

[0150] Components e and h have similar substring arrangements. Although there are only two bypass diodes, they can act on a single substring through a parallel structure. While substring b is more resistant to solder joint defects than substring c, and component h itself has a higher flyback distance (FF) than component e under normal conditions, the FF of component h, which contains solder joint defects, is still higher than that of component e, which also contains solder joint defects.

[0151] Furthermore, to analyze the impact of shading on the IV performance of photovoltaic modules, this invention provides two shading scenarios. The first shading scenario (No. 1 shading) refers to shading of 158 mm... 2 ×79 mm 2 The area of ​​radiation received was changed to 100W / cm2; the second type of shading (No.2 shading) doubled the shading area compared to No.1 shading.

[0152] like Figures 11 to 14 As shown, substring a occludes half of a single battery cell, substring b occludes half of five adjacent cut battery cells, and substring c needs to be discussed in two cases: the shadow is close to the center line of the substring and covers half of the area of ​​a single battery cell, and the shadow is close to the edge of the substring and covers half of the area of ​​a single battery cell. For both cases, the irradiance is averaged over area, assuming the irradiance received by the single battery cell is 550 W / cm², ensuring consistent simulation logic for both occlusion distribution scenarios.

[0153] like Figures 15 to 18 As shown, substring a occludes the entire area of ​​a single complete cell, substring b occludes the entire area of ​​five adjacent cut cell segments, and substring c needs to be discussed in two cases: the shadow is close to the center line and the shadow is close to the edge. Both cases involve the occlusion area doubling. The reduction ratio of photocurrent is determined by combining the shadow coverage area ratio with the standard irradiance and the irradiance of the shadow area, thereby simulating the irradiance reduction state.

[0154] Table 3 shows the simulated IV performance of substrings under different shading conditions. As can be seen from Table 3, substrings a and b are both in a fully tandem configuration, which has the advantage of lower manufacturing cost. However, if any cell in the series is shaded by a certain area ratio, the power of the entire substring will decrease proportionally. Substring c, manufactured using a mixed series-parallel configuration, has better resistance to localized shading. Comparing No.1 and No.2, when the localized shading area is reduced by half, substring c shows less power attenuation than the conventional tandem substring. The two shading distributions of substring c affect the results, but the difference is small. Subsequent component simulations will use the distribution with significant attenuation as the data for the defective substring.

[0155] Table 3. Substring Simulated IV Performance under Different Occlusion Conditions

[0156]

[0157] Substituting the data in Table 3 into the corresponding third simulation model for simulation, the changes in the simulated IV performance of the component under different occlusion conditions are shown in Table 4.

[0158] Table 4. Simulated IV Performance of Components under Different Shading Conditions

[0159]

[0160] As shown in Table 4, the Pm attenuation of module d is similar under both shading conditions. This is because the bypass diodes prevent the defective substring from participating in power generation at the maximum power point and do not contribute to power loss as internal resistance, thus not affecting the power output of the normal substring. However, for modules f and g under shading condition No. 1, the power attenuation is the same because the substring's own power attenuation is relatively small, and the bypass diodes do not function at the module's maximum power point. Under shading condition No. 2, the number of bypass diodes affects the power output of the normal substring; module f, with only two bypass diodes, experiences greater power attenuation than modules d and g, which have three bypass diodes.

[0161] Compared to the fully cascaded structure of components d, f, and g, components e and h, as a series-parallel structure, can effectively reduce the impact of defective substrings on Pm. Component h exhibits less attenuation under small-area local occlusion, but is less effective than component e under large-area occlusion.

[0162] The performance simulation analysis above shows that solder joint defects increase the equivalent series resistance inside the module. A smaller sub-string operating current can reduce the power loss due to series resistance. While module h exhibits the best resistance to solder joint defects and shading, its larger number of parallel sub-strings results in a higher operating current, increasing the array's transmission resistance loss. Reducing the area of ​​individual cells can be considered as an optimization approach. However, it's important to note that reducing cell area increases edge recombination losses. Further research is needed to improve the edge passivation effect of cells to achieve a balanced optimization scheme between internal resistance loss and edge recombination loss.

[0163] Increasing the number of cells connected in parallel can effectively reduce the impact of shading on the overall module. From the perspective of staggered shingled sub-string design, one can consider increasing the width of the sub-strings to allow more cells to be connected in parallel, or increasing the number of bypass diodes to allow more cells to generate electricity normally. However, the increased manufacturing cost needs to be considered as a limitation on the structural design.

[0164] Embodiments of the present invention also provide a non-transitory machine-readable medium storing a computer program, wherein the computer program, when executed by a computer's processor, is used to cause the computer to perform a method according to an embodiment of the present invention.

[0165] Embodiments of the present invention also provide a computer program product, including a computer program, wherein the computer program, when executed by a computer's processor, is used to cause the computer to perform the method of an embodiment of the present invention.

[0166] An embodiment of the present invention also provides an electronic device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program executable by the at least one processor, which, when executed by the at least one processor, causes the electronic device to perform the method of the embodiment of the present invention.

[0167] refer to Figure 19 The present invention will now describe a structural block diagram of an electronic device that can serve as an embodiment of the present invention, serving as an example of a hardware device applicable to various aspects of the present invention. The electronic device is intended to represent various forms of digital electronic computer devices, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present invention described and / or claimed herein.

[0168] like Figure 19 As shown, the electronic device includes a computing unit 801, which can perform various appropriate actions and processes based on a computer program stored in ROM (Read-Only Memory) 802 or loaded from storage unit 808 into RAM (Random Access Memory) 803. RAM 803 can also store various programs and data required for the operation of the electronic device. The computing unit 801, ROM 802, and RAM 803 are interconnected via bus 804. An I / O interface (Input / Output Interface) 805 is also connected to bus 804.

[0169] Multiple components in the electronic device are connected to I / O interface 805, including: input unit 806, output unit 807, storage unit 808, and communication unit 809. Input unit 806 can be any type of device capable of inputting information into the electronic device. Input unit 806 can receive input digital or character information and generate key signal inputs related to user settings and / or function control of the electronic device. Output unit 807 can be any type of device capable of presenting information and may include, but is not limited to, a display, speaker, video / audio output terminal, vibrator, and / or printer. Storage unit 808 may include, but is not limited to, disks and optical discs. Communication unit 809 allows the electronic device to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks, and may include, but is not limited to, modems, network cards, infrared communication devices, and / or wireless communication transceivers, such as Bluetooth devices, WiFi devices, WiMax devices, cellular communication devices, and / or the like.

[0170] The computing unit 801 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 801 include, but are not limited to, a CPU (Central Processing Unit), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing units, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 801 performs the various methods and processes described above. For example, in some embodiments, the method embodiments of the present invention can be implemented as a computer program tangibly contained in a machine-readable medium, such as storage unit 808. In some embodiments, part or all of the computer program can be loaded and / or installed on an electronic device via ROM 802 and / or communication unit 809. In some embodiments, the computing unit 801 can be configured to perform the methods described above by any other suitable means (e.g., by means of firmware).

[0171] Computer programs for implementing the methods of embodiments of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be performed. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0172] In the context of embodiments of this invention, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable signal medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, or infrared systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0173] It should be noted that the term "comprising" and its variations used in the embodiments of this invention are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The modifications of "one" and "a plurality" mentioned in the embodiments of this invention are illustrative and not restrictive, and those skilled in the art should understand that unless explicitly indicated otherwise in the context, they should be understood as "one or more".

[0174] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in the embodiments of this invention are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions, and corresponding operation entry points are provided for users to choose to authorize or refuse.

[0175] The steps described in the method embodiments provided by the present invention can be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of protection of the present invention is not limited in this respect.

[0176] The term "embodiment" in this specification refers to a specific feature, structure, or characteristic described in connection with an embodiment that may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily imply the same embodiment, nor does it imply independence or alternativeity from other embodiments. The various embodiments in this specification are described in a related manner, with reference to each other for similar or identical parts. In particular, for apparatus, device, and system embodiments, since they are substantially similar to method embodiments, the description is relatively simple, and relevant details are referred to in the description of the method embodiments.

[0177] The above-described embodiments are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of protection. It should be noted that those skilled in the art can make various modifications and improvements without departing from the inventive concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the appended claims.

Claims

1. A method for simulating the performance of a staggered shingled photovoltaic module, characterized in that, Includes the following steps: The performance parameters of each individual cell are collected; wherein, the individual cell is a multi-specification slice cut into shape and adapted to a staggered shingled structure; the performance parameters include the geometric dimensions of the cell, electrical performance characteristics, and composite current density parameters corresponding to the cutting process. Based on the equivalent circuit topology of a photovoltaic cell with dual diodes, a first simulation model corresponding to each of the individual cells is built in a simulation environment. Based on the performance parameters and the first measured current-voltage characteristic parameters of the single cell, the first model parameters of the first simulation model are optimized; wherein, the first measured current-voltage characteristic parameters are the parameters obtained by the single cell through current-voltage testing; Multiple first simulation models corresponding to multiple individual cells are virtually networked according to the series and parallel connection rules of staggered shingled structure and the overlap constraint between cells to obtain a second simulation model of cell string; wherein, the first simulation model is built based on the performance parameters of the corresponding individual cells and the equivalent circuit topology of photovoltaic cells; Based on the topology of the battery cell string in the photovoltaic module, multiple second simulation models are virtually networked to obtain a third simulation model of the photovoltaic module; By adjusting the target parameters of the third simulation model, the defect state and normal operation state of the photovoltaic module are simulated; wherein, the target parameters include the target parameters of the first simulation model and the target parameters of the second simulation model, which are related to the defect state; Based on the simulated current-voltage characteristics output by the third simulation model under the corresponding target parameters, the performance indicators of the photovoltaic module under the defective state and normal operating state are calculated.

2. The performance simulation method for staggered shingled photovoltaic modules according to claim 1, characterized in that, Multiple first simulation models corresponding to multiple individual cells are virtually networked according to the series-parallel connection rules of staggered shingled structures and the overlap constraints between cells to obtain a second simulation model of the cell string, including the following steps: Multiple first simulation models corresponding to multiple single cells are virtually networked in the simulation environment according to the series and parallel connection rules of staggered shingled structure and the parameter constraints corresponding to the overlap between cells, to obtain the second simulation model of cell string. Based on the performance parameters corresponding to each individual cell and the second measured volt-ampere characteristic parameters of the cell string, the second model parameters of the second simulation model are optimized; wherein, the second measured volt-ampere characteristic parameters are cell string parameters derived based on each of the first measured volt-ampere characteristic parameters.

3. The performance simulation method for staggered shingled photovoltaic modules according to claim 1, characterized in that, Based on the topology of the solar cell strings in the photovoltaic module, multiple second simulation models are virtually networked to obtain a third simulation model of the photovoltaic module, including the following steps: Based on the first topology among the various cell strings in the photovoltaic module, multiple cell string models are networked together; wherein, the first topology includes: a fully series structure and a series-parallel hybrid structure; Based on the first topology and the second topology between the cell string and the bypass diode, an appropriate number of bypass diodes are connected in antiparallel to the corresponding cell string to form the third simulation model of the photovoltaic module.

4. The performance simulation method for staggered shingled photovoltaic modules according to claim 3, characterized in that, The third simulation model of the photovoltaic module is formed by connecting an appropriate number of bypass diodes in anti-parallel with the corresponding solar cell strings, including the following steps: When the first topology is a fully series connection, two or three bypass diodes are connected in antiparallel to the corresponding battery cell strings to form the third simulation model of the photovoltaic module. When the first topology is a fully parallel connection, the two bypass diodes are connected in antiparallel to the corresponding cell strings to form the third simulation model of the photovoltaic module.

5. The performance simulation method for staggered shingled photovoltaic modules according to claim 1, characterized in that, By adjusting the target parameters of the third simulation model, the defect state and normal operating state of the photovoltaic module are simulated, including the following steps: The normal operating state of a photovoltaic module is simulated by adjusting the target parameters of the third simulation model to preset standard values; wherein, the target parameters include: the equivalent series resistance of the second simulation model and the photocurrent of the first simulation model; By increasing the equivalent series resistance corresponding to the target cell string, the welding failure state of the photovoltaic module is simulated. By reducing the photocurrent corresponding to the target solar cell, the reduced irradiance caused by the shading of the photovoltaic module is simulated.

6. The performance simulation method for staggered shingled photovoltaic modules according to claim 5, characterized in that, By increasing the equivalent series resistance corresponding to the target cell string, a welding defect fault state of the photovoltaic module is simulated, including the following steps: Based on simulation requirements, a second simulation model corresponding to the target battery cell string with welding defects is preset in the third simulation model. An additional equivalent series resistance is added to the second simulation model to increase the equivalent series resistance of the target battery cell string; Adjust the value of the additional equivalent series resistor according to the severity of the welding defect to match the fault level corresponding to different contact resistances.

7. The performance simulation method for staggered shingled photovoltaic modules according to claim 5, characterized in that, By reducing the photocurrent corresponding to the target solar cell, simulating the reduced irradiance caused by shading of photovoltaic modules, the following steps are included: Based on simulation requirements, in the second simulation model corresponding to the third simulation model, a first simulation model corresponding to the target battery cell with the risk of shadow occlusion is preset, as well as the proportion of shadow coverage area in the target battery cell; Based on the percentage of the shaded area, combined with the standard irradiance and the irradiance of the shaded area, the reduction ratio of the photocurrent is determined. Based on the reduction ratio, the photocurrent of the first simulation model corresponding to the target cell is adjusted to simulate the irradiance reduction state caused by the shading of the photovoltaic module.

8. The performance simulation method for staggered shingled photovoltaic modules according to claim 1, characterized in that, Based on the simulated parameters of the volt-ampere characteristics output by the third simulation model under the corresponding target parameters, the performance indicators of the photovoltaic module under the defect state and normal operation state are calculated, including the following steps; The target parameters corresponding to the normal working state and the defective state are input into the third simulation model; The simulated parameters of the volt-ampere characteristics output by the third simulation model; wherein, the simulated parameters of the volt-ampere characteristics include any one or more of the following: open circuit voltage, short circuit current, maximum power point voltage, and maximum power point current; Based on the simulated parameters of the current-voltage characteristics, the corresponding performance indicators are derived; the performance indicators include any one or more of the following: maximum power, fill factor, and power attenuation rate.

9. An electronic device, comprising: A processor and a memory storing a program, characterized in that the program includes instructions that, when executed by the processor, cause the processor to perform the method according to any one of claims 1 to 8.

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