Apparatus for manufacturing display device, method for manufacturing display device, and electronic device

Abstract

Disclosed are an apparatus for manufacturing a display device, a method for manufacturing a display device, and an electronic device. The apparatus for manufacturing a display device includes: a platform; the processing laser unit is used for generating first laser towards the platform; the flatness sensing unit is used for generating second laser towards the platform; the common optical system is arranged in an optical path of the first laser and the second laser; and a thickness sensing unit generating a third laser light toward the stage, where the common optical system includes an objective lens through which both the first laser light and the second laser light pass.

Description

[0001] This application claims priority to and all benefits derived therefrom of Korean Patent Application No. 10-2024-0120900, filed on September 5, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] Embodiments of this disclosure relate to apparatus for manufacturing a display device, methods for manufacturing a display device, and electronic devices. Background Technology

[0003] With the development of an information-oriented society, display devices for displaying images are being used more widely in various fields. Display devices can be flat panel displays such as liquid crystal displays, field emission displays, and light-emitting displays.

[0004] Display devices include a display area for displaying images and a non-display area disposed around the display area (e.g., configured to surround the display area). Recently, the width of the non-display area has been gradually reduced to increase the immersive experience within the display area and enhance the aesthetics of the display device.

[0005] In the manufacturing process of a display device, the display device can be formed by cutting the mother substrate along multiple display units formed on a mother substrate that includes multiple display units.

[0006] The non-display area may include a first non-display area in which lines and circuits for driving the display area are disposed, and a second non-display area corresponding to the margin of the cutting process in the manufacturing process. Due to limitations on reducing the lines and circuits in the first non-display area, methods for reducing the width of the second non-display area are being investigated.

[0007] Laser processing equipment can be used to cut mother substrates. A laser processing equipment is a device that uses a laser beam to perform processes such as cutting, patterning, and welding of materials. The laser beam used in laser processing has the characteristics of strong directionality and high density. In particular, high-power lasers can be used to process display panels because they do not affect the surrounding environment and enable precise processing. Summary of the Invention

[0008] Embodiments of this disclosure provide apparatus for manufacturing display devices and methods for manufacturing display devices capable of real-time correction of laser focal length.

[0009] Embodiments of this disclosure also provide equipment and methods for manufacturing display devices that can improve the mass production quality and yield of display devices.

[0010] However, the embodiments of this disclosure are not limited to those set forth herein. The above and other embodiments of this disclosure will become more apparent to those skilled in the art from the following detailed description of this disclosure.

[0011] According to embodiments of the present disclosure, an apparatus for manufacturing a display device includes: a platform; a processing laser unit that generates a first laser toward the platform; a flatness sensing unit that generates a second laser toward the platform; a common optical system disposed in the optical paths of the first and second lasers; and a thickness sensing unit that generates a third laser toward the platform, wherein the common optical system includes an objective lens through which both the first and second lasers pass.

[0012] In an embodiment, the common optical system may further include a beam splitter that transmits a portion of each of the first laser and the second laser and reflects another portion of each of the first laser and the second laser. A processing laser unit may be disposed on one side of the first surface of the beam splitter, and a flatness sensing unit may be disposed on one side of a second surface of the beam splitter that is different from the first surface of the beam splitter.

[0013] In an embodiment, the direction along which the first laser is incident on the beam splitter may be different from the direction along which the second laser is incident on the beam splitter.

[0014] In one embodiment, the objective lens may be disposed on a third surface of the beam splitter, which is different from the first and second surfaces of the beam splitter.

[0015] In an embodiment, the beam splitter can cause a first laser and a second laser incident from different directions to be emitted in the same direction.

[0016] In an embodiment, the common optical system may further include a beam collector that absorbs at least a portion of the first laser and the second laser, and the beam collector is disposed on a side of a fourth surface of the beam splitter that is different from the first to third surfaces of the beam splitter.

[0017] In an embodiment, the beam splitter may include a prism or a semi-reflective mirror.

[0018] In one embodiment, the common optical system may further include an objective lens driver that provides driving force to the objective lens.

[0019] In one embodiment, the objective lens driver can move the objective lens to adjust the focal position of the first laser and the second laser.

[0020] In an embodiment, the separation distance between the focal position of the first laser and the focal position of the second laser can be equal to or less than approximately 50 micrometers (μm).

[0021] In one embodiment, the focal point of the second laser may be located on the top surface of the platform.

[0022] In an embodiment, the focal point of the third laser can be located on the top and bottom surfaces of the target object.

[0023] In one embodiment, the flatness sensing unit may include an autofocus sensor.

[0024] In one embodiment, the thickness sensing unit may include a confocal sensor.

[0025] In this embodiment, the wavelength of the first laser may be greater than the wavelength of the second laser.

[0026] According to embodiments of the present disclosure, a method for manufacturing a display device includes: measuring the thickness of a mother substrate by irradiating the top and bottom surfaces of a mother substrate with a first sensing laser; measuring the flatness of the mother substrate by irradiating the bottom surface of the mother substrate with a second sensing laser; correcting the focal position of a processing laser by adjusting the position of an optical system based on the measured thickness and the measured flatness of the mother substrate; and forming a cutting line by irradiating the mother substrate with a processing laser, wherein the flatness measurement, the correction of the focal position of the processing laser, and the formation of the cutting line are performed simultaneously.

[0027] In one embodiment, both the second sensing laser and the processing laser can pass through the optical system.

[0028] In an embodiment, the flatness measurement and the correction of the focal position of the processing laser may include adjusting the position of the optical system by real-time tracking of the curvature of the bottom surface of the mother substrate with a second sensing laser, and the focal position of the processing laser is adjusted together with the position of the optical system.

[0029] In this embodiment, the focal position of the processing laser can be synchronized with the focal position of the second sensing laser via an optical system.

[0030] In one embodiment, the position of the optical system can be corrected based on the change in the focal position of the second sensing laser, and the focal position of the processing laser is corrected together with the correction of the position of the optical system.

[0031] In the apparatus and method for manufacturing a display device according to embodiments of the present disclosure, the laser focal length can be corrected in real time.

[0032] In the apparatus and method for manufacturing a display device according to embodiments of the present disclosure, it is possible to improve the mass production quality and output of the display device.

[0033] It should be noted that the effects of this disclosure are not limited to those described above, and other effects of this disclosure will be apparent to those skilled in the art from the following description. Attached Figure Description

[0034] The above and other features of the embodiments of this disclosure will become more apparent from the detailed description of the embodiments with reference to the accompanying drawings, in which:

[0035] Figure 1 This is a perspective view showing a display device according to an embodiment;

[0036] Figure 2 This is a plan view illustrating the display panel and driver IC according to an embodiment;

[0037] Figure 3 It is along Figure 1 Cross-sectional views of lines XA-XA' and XB-XB';

[0038] Figure 4 It shows the bent state. Figure 3 A cross-sectional view of the display device;

[0039] Figure 5 This is a cross-sectional view illustrating an example of the display area of ​​a display panel according to an embodiment;

[0040] Figure 6 yes Figure 2 A magnified view of region A;

[0041] Figure 7 It shows along Figure 6 A cross-sectional view of an example display panel taken by line XC-XC';

[0042] Figure 8 It shows along Figure 6 A cross-sectional view of another example of a display panel, taken by line XC-XC';

[0043] Figure 9 yes Figure 7 A magnified view of region C;

[0044] Figure 10 yes Figure 2 A magnified view of region B;

[0045] Figure 11 It is along Figure 10 A cross-sectional view taken from line XD-XD';

[0046] Figure 12 yes Figure 11 A magnified view of region D;

[0047] Figure 13 This is a flowchart illustrating a method for manufacturing a display device according to an embodiment;

[0048] Figure 14 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S100;

[0049] Figure 15 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S200;

[0050] Figure 16 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S300;

[0051] Figure 17 and Figure 18 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S400;

[0052] Figure 19 It is shown Figure 13 A cross-sectional view of the orifice dam and the area inserted therebetween in process S100;

[0053] Figure 20 It is shown Figure 13 A cross-sectional view of the orifice dam and the area inserted therebetween in process S200;

[0054] Figure 21 It is shown Figure 13 A cross-sectional view of the orifice dam and the area inserted therebetween in process S300;

[0055] Figure 22 and Figure 23 It is shown Figure 13 A cross-sectional view of the orifice dam and the area inserted therebetween in process S400;

[0056] Figure 24 This is a cross-sectional view showing an apparatus for manufacturing a display device according to an embodiment;

[0057] Figure 25 This is a cross-sectional view illustrating the operating state of the thickness sensing unit according to an embodiment;

[0058] Figure 26 This is a cross-sectional view illustrating a thickness sensing method of a thickness sensing unit according to an embodiment;

[0059] Figure 27 This is a cross-sectional view illustrating the operating state of the flatness sensing unit according to an embodiment;

[0060] Figure 28 This is a cross-sectional view illustrating the operating state of the processing laser unit according to an embodiment;

[0061] Figure 29This is a cross-sectional view illustrating the operating state of the flatness sensing unit and the processing laser unit according to an embodiment;

[0062] Figure 30 This is a cross-sectional view illustrating the travel paths of the sensing laser of the flatness sensing unit and the processing laser of the processing laser unit according to an embodiment; and

[0063] Figure 31 This is a cross-sectional view illustrating a flatness sensing method of a flatness sensing unit according to an embodiment. Detailed Implementation

[0064] The invention will now be described more fully with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout refer to the same elements.

[0065] It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on that other layer or substrate, or an intervening layer may also exist therein. Conversely, when an element is referred to as being "directly on" another element, there is no intervening element.

[0066] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or part from another. Therefore, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part without departing from the teachings herein.

[0067] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both the singular and the plural unless the context clearly indicates otherwise. Thus, a reference to an element “a” in the claims (followed by a reference to the element “the”) includes one element and multiple elements. For example, “element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” should not be construed as limited to “a.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will be further understood that, when used in this specification, the terms “comprising” or “including” and / or variations thereof indicate the presence of stated features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or groups thereof.

[0068] Furthermore, relative terms such as “below” or “bottom” and “above” or “top” may be used herein to describe the relationship between one element and another as illustrated in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the drawings, the relative terms are intended to encompass different orientations of the device. For example, if the device in one of the drawings is flipped, the element described as being “below” the other element will then be oriented “above” that other element. Thus, depending on the specific orientation of the drawing, the term “below” can therefore encompass both “below” and “above” orientations. Similarly, if the device in one of the drawings is flipped, the element described as being “below” or “under” the other element will then be oriented “above” that other element. Thus, the terms “below” or “under” can encompass both “above” and “below” orientations.

[0069] Given the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., limitations of the measurement system), as used herein, “about” or “approximately” includes stated values ​​and means within an acceptable range of deviation from that particular value as determined by one of ordinary skill in the art. For example, “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0070] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms (such as those defined in common dictionaries) shall be interpreted as having the same meaning as they have in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0071] Embodiments are described herein with reference to schematic cross-sectional views illustrating preferred embodiments. Thus, variations in the shape of the illustrations are expected as a result of, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions illustrated herein, but will include, for example, deviations in shape due to manufacturing processes. For example, regions illustrated or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners in the illustrations may be rounded. Therefore, the regions illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate precise shapes of the regions and are not intended to limit the scope of this disclosure.

[0072] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0073] Figure 1 This is a perspective view showing a display device according to an embodiment. Figure 2 This is a plan view illustrating the display panel and driver IC according to an embodiment.

[0074] Reference Figure 1 and Figure 2 The display device 10, which is a device for displaying moving or still images, can be used to provide displays for various devices such as televisions, laptops, monitors, billboards, and Internet of Things (IoT) devices, as well as portable electronic devices such as mobile phones, smartphones, tablet PCs, smartwatches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, and ultra-mobile PCs (UMPCs).

[0075] The display device 10 according to the embodiments may be an organic light-emitting display such as an organic light-emitting display using organic light-emitting diodes, a quantum dot light-emitting display including a quantum dot light-emitting layer, an inorganic light-emitting display including inorganic semiconductors, or a light-emitting display using micron or nano light-emitting diodes (LEDs). In the following description, for ease of description, an embodiment of the display device 10 as an organic light-emitting display will be primarily described, but this disclosure is not limited thereto.

[0076] The display device 10 according to the embodiment may include a display panel 100, a driver integrated circuit (IC) 200, and a circuit board 300.

[0077] In a planar view, the display panel 100 can be formed as a rectangle having a long side in a first direction (X-axis direction) and a short side in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). The corner formed by the long side in the first direction (X-axis direction) and the short side in the second direction (Y-axis direction) can be a right angle or rounded with a certain curvature. The planar shape of the display panel 100 is not limited to a rectangular shape, and can also be formed as another polygonal shape, a circular shape, or an elliptical shape.

[0078] In this disclosure, the first direction (X-axis direction) and the second direction (Y-axis direction) intersect each other as horizontal directions. For example, the first direction (X-axis direction) and the second direction (Y-axis direction) can be orthogonal to each other. Additionally, a third direction (Z-axis direction) intersects the first direction (X-axis direction) and the second direction (Y-axis direction), and the directions from the first direction to the third direction can be, for example, perpendicular directions that are orthogonal to each other. In this disclosure, the direction indicated by the arrow from the first direction to the third direction (X-axis direction, Y-axis direction, and Z-axis direction) can be referred to as one side, and the opposite direction can be referred to as the other side.

[0079] In one embodiment, the display panel 100 may be formed as flat, but is not limited thereto. In another embodiment, for example, the display panel 100 may include curved portions formed at the left and right ends and having a constant or varying curvature. In another embodiment, the display panel 100 may be flexibly formed such that the display panel 100 may be bent, folded, rolled, or bent.

[0080] The display panel 100 may include a display area DA for displaying images and a non-display area NDA disposed around the display area DA.

[0081] The display area DA can occupy most of the area of ​​the display panel 100. The display area DA can be set at the center of the display panel 100. Pixels, each comprising multiple emission areas, can be set in the display area DA to display images.

[0082] The non-display area NDA can be set adjacent to the display area DA. The non-display area NDA can be an area outside the display area DA. The non-display area NDA can be set to surround the display area DA. The non-display area NDA can be an edge area of ​​the display panel 100.

[0083] The non-display area NDA can include the bending area BA and the pad area PDA.

[0084] The bending area BA can be positioned between the display area DA and the pad area PDA in the second direction (Y-axis direction). The bending area BA can extend in the first direction (X-axis direction). The bending area BA refers to the area that bends towards the bottom of the display panel 100. When the bending area BA bends towards the bottom of the display panel 100, multiple driver ICs 200 and multiple circuit boards 300 can be positioned below the display panel 100.

[0085] The pad area PDA can be the lower edge area of ​​the display panel 100. The pad area PDA can be the area where the display pad PD connected to the circuit board 300 and the drive pad connected to the driver IC 200 are located.

[0086] Display pads (PDs) can be arranged in the pad area (PDA) for connection to the circuit board 300. The display pads (PDs) can be located on one side edge of the display panel 100. In an embodiment, for example, the display pads (PDs) can be located at the lower edge of the display panel 100.

[0087] The driver IC 200 can generate data voltage, source voltage, and scan timing signals, etc. The driver IC 200 can also output data voltage, source voltage, and scan timing signals, etc.

[0088] Driver IC 200 can be disposed in the pad area PDA. Driver IC 200 can also be disposed in the non-display area NDA between the display pad PD and the display area DA. Each of the driver ICs 200 can be attached to the non-display area NDA of the display panel 100 using a chip-on-glass (COG) method. Alternatively, each of the driver ICs 200 can be attached to the non-display area NDA using a chip-on-plastic (COP) method.

[0089] The circuit board 300 can be disposed on the display pad PD, which is disposed on one side edge of the display panel 100. The circuit board 300 can be attached to the display pad PD using a conductive adhesive member such as an anisotropic conductive film and anisotropic conductive adhesive. Accordingly, the circuit board 300 can be electrically connected to the signal lines of the display panel 100. The circuit board 300 can be a flexible printed circuit board or a flexible film such as a flip-chip film.

[0090] The through-hole TH can be defined on one side of the display area DA. The through-hole TH can be a hole that allows light to pass through, and it can be an area where optical devices are installed.

[0091] Figure 3 It is along Figure 1 The cross-sectional view taken by lines XA-XA' and XB-XB'. Figure 4 It shows the bent state. Figure 3 A cross-sectional view of the display device.

[0092] Reference Figure 3 and Figure 4 The display device 10 according to the embodiment may include a display panel 100, a polarizing film PF, a cover window CW, and a lower cover PB. The display panel 100 may include a substrate SUB and a display layer DISL (see... Figure 5 ).

[0093] The substrate SUB may comprise a rigid or hard material. In embodiments, for example, the substrate SUB may comprise or be made of glass. The substrate SUB may be formed or defined from ultrathin glass (UTG) having a thickness of about 200 micrometers (μm) or less.

[0094] The display layer DISL can be disposed on the first surface of the substrate SUB. The display layer DISL can be a layer for displaying images. The display layer DISL may include a thin-film transistor layer (TFTL) in which thin-film transistors are formed (see...). Figure 5 The light-emitting element is disposed in the light-emitting element layer EML in the emission region (see...). Figure 5 ), encapsulation layer ENC and sensor electrode layer SENL.

[0095] In the display area DA of the display layer DISL, scan lines, data lines, or power lines for the emitting area used for light emission can be set. In the non-display area NDA of the display layer DISL, scan drive circuit units for outputting scan signals to scan lines or fan-out lines for connecting data lines and driver IC 200 can be set.

[0096] The encapsulation layer ENC can be a layer used to encapsulate the light-emitting element layer (EML) of the display layer (DISL) to prevent oxygen or moisture from penetrating into the EML of the display layer (DISL). The encapsulation layer ENC can be disposed on the EML of the display layer (DISL). The encapsulation layer ENC can be disposed on the top and side surfaces of the EML of the display layer (DISL). The encapsulation layer ENC can be configured to cover the EML of the display layer (DISL).

[0097] The sensor electrode layer (SENL) can be disposed on the encapsulation layer (ENC). The sensor electrode layer (SENL) can include sensor electrodes. The sensor electrode layer (SENL) can use the sensor electrodes to sense the user's touch.

[0098] A polarizing film PF can be disposed on the sensor electrode layer SENL. The polarizing film PF can be disposed on the display panel 100 to reduce the reflection of external light. The polarizing film PF may include a first substrate member, a linear polarizer, a phase retardation film such as a quarter-wave plate (λ / 4 plate), and a second substrate member. The first substrate member, the phase retardation film, the linear polarizer, and the second substrate member of the polarizing film PF can be sequentially stacked on the display panel 100.

[0099] The cover window (CW) can be placed on the polarizing film (PF). The cover window (CW) can be attached to the polarizing film (PF) using a transparent adhesive component such as an optically clear adhesive (OCA) film.

[0100] The lower panel cover PB can be disposed on the second surface of the substrate SUB of the display panel 100. The second surface of the substrate SUB can be the surface opposite to its first surface. The lower panel cover PB can be attached to the second surface of the substrate SUB of the display panel 100 by means of an adhesive member. The adhesive member can be a pressure-sensitive adhesive (PSA).

[0101] The panel bottom cover PB may include at least one selected from light-blocking members for absorbing light incident from the outside, buffer members for absorbing impacts from the outside, and heat dissipation members for effectively dissipating heat from the display panel 100.

[0102] The driver IC 200 and circuit board 300 can be bent downwards from the display panel 100. The circuit board 300 can be attached to the bottom surface of the panel cover PB via an adhesive member 310. The adhesive member 310 can be a pressure-sensitive adhesive.

[0103] According to an embodiment, a through-hole TH may be defined in the display device 10. The through-hole TH may be a light-transmitting hole and may be a physical hole that penetrates not only the display panel 100 but also the under-panel cover PB and the polarizing film PF. In an embodiment, for example, the through-hole TH may be defined or formed through the substrate SUB and display layer DISL of the display panel 100, as well as the under-panel cover PB and the polarizing film PF. However, this disclosure is not limited thereto, and while the through-hole TH may be defined or formed through the under-panel cover PB, it may not extend through the display panel 100 and the polarizing film PF. A cover window CW may be configured to cover the through-hole TH.

[0104] The electronic device including the display device 10 according to the embodiment may further include an optical element OPD disposed in the through-hole TH. The optical element OPD may be spaced apart from the display panel 100, the panel cover PB, and the polarizing film PF. The optical element OPD may be an optical sensor, such as a proximity sensor, an illuminance sensor, and a camera sensor, that senses light incident through the through-hole TH.

[0105] Figure 5This is a cross-sectional view illustrating an example of the display area of ​​a display panel according to an embodiment.

[0106] Reference Figure 5 According to the embodiment, the display panel 100 may be an organic light-emitting display panel including a light-emitting element LEL containing an organic light-emitting layer 172. The display layer DISL may include a thin film transistor layer TFTL containing a plurality of thin film transistors, a light-emitting element layer EML containing a plurality of light-emitting elements, an encapsulation layer ENC, and a sensor electrode layer SENL.

[0107] The substrate SUB can be made of a rigid or hard material. In embodiments, for example, the substrate SUB can include or be made of glass. The substrate SUB can be formed or defined from a UTG having a thickness of about 200 μm or less.

[0108] A buffer film (BF) can be disposed on a substrate (SUB). The buffer film (BF) may comprise, or be formed of, an inorganic material such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. Alternatively, the buffer film (BF) may be formed as a multilayer in which multiple layers selected from silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide layers are alternately stacked, or defined thereon.

[0109] An active layer comprising the channel region TCH, source region TS, and drain region TD of a thin-film transistor (TFT) can be disposed on a buffer film BF. The active layer may comprise, or be formed from, polycrystalline silicon (e.g., low-temperature polycrystalline silicon), monocrystalline silicon, amorphous silicon, or oxide semiconductor materials. In embodiments where the active layer comprises polycrystalline silicon or oxide semiconductor materials, the source region TS and drain region TD of the active layer may be conductive regions doped with ions or impurities and possessing conductivity.

[0110] The gate insulating film 130 can be disposed on the active layer of the thin-film transistor (TFT). The gate insulating film 130 may include, or be formed from, an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0111] A first gate metal layer, including the gate electrode TG of the thin-film transistor TFT, the first capacitor electrode CAE1 of the capacitor Cst, and the scan line, can be disposed on the gate insulating film 130. The gate electrode TG of the thin-film transistor TFT can overlap with the channel region TCH in the third direction (Z-axis direction). The first gate metal layer can be formed as a single layer or multiple layers including, or defined by, at least one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or alloys thereof.

[0112] The first interlayer insulating film 141 may be disposed on the first gate metal layer. The first interlayer insulating film 141 may include, or be formed of, an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating film 141 may include multiple inorganic films.

[0113] A second gate metal layer, including a second capacitor electrode CAE2 of capacitor Cst, can be disposed on the first interlayer insulating film 141. The second capacitor electrode CAE2 can overlap with the first capacitor electrode CAE1 in a third direction (Z-axis direction). Therefore, capacitor Cst can be formed or defined by or defined by the first capacitor electrode CAE1, the second capacitor electrode CAE2, and an inorganic insulating dielectric layer disposed therebetween to act as a dielectric layer. The second gate metal layer can be formed as a single layer or multiple layers comprising, or defined by, at least one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0114] The second interlayer insulating film 142 may be disposed on the second gate metal layer. The second interlayer insulating film 142 may include, or be formed of, an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating film 142 may include multiple inorganic films.

[0115] A first data metal layer, including a first connection electrode CE1 and a data line, can be disposed on a second interlayer insulating film 142. The first connection electrode CE1 can be connected to the drain region TD through a first contact hole CT1 penetrating the gate insulating film 130, the first interlayer insulating film 141, and the second interlayer insulating film 142. The first data metal layer can be formed as a single layer or multiple layers comprising, or defined by, at least one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0116] A first organic film 160 for flattening the stepped portion caused by the thin-film transistor (TFT) can be disposed on the first connection electrode CE1. The first organic film 160 may include, or be formed from, organic films such as acrylamide resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0117] A second data metal layer, including the second connection electrode CE2, may be disposed on the first organic film 160. The second data metal layer may be connected to the first connection electrode CE1 via a second contact hole CT2 defined or formed through the first organic film 160. The second data metal layer may be formed as a single layer or multiple layers comprising, or defined by, at least one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0118] The second organic film 180 may be disposed on the second connecting electrode CE2. The second organic film 180 may include, or be formed from, organic films such as acrylamide resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0119] In this embodiment, the second data metal layer and the second organic film 180, including the second connecting electrode CE2, may be omitted.

[0120] The light-emitting element layer (EML) is disposed on the thin-film transistor layer (TFTL). The light-emitting element layer (EML) may include a light-emitting element (LEL) and a diaphragm (190).

[0121] Each of the light-emitting elements (LELs) may include a pixel electrode 171, a light-emitting layer 172, and a common electrode 173. Each of the emitting regions (EAs) is a region in which the pixel electrode 171, the light-emitting layer 172, and the common electrode 173 are sequentially stacked such that holes from the pixel electrode 171 and electrons from the common electrode 173 recombine with each other to emit light. In this case, the pixel electrode 171 may be an anode electrode, and the common electrode 173 may be a cathode electrode.

[0122] A pixel electrode layer, including pixel electrode 171, can be formed or disposed on the second organic film 180. Pixel electrode 171 can be connected to the second connection electrode CE2 via a third contact hole CT3 defined or formed through the second organic film 180. The pixel electrode layer can be formed as a single layer or multiple layers comprising at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0123] In embodiments having a top-emitting structure that emits light toward the common electrode 173 relative to the light-emitting layer 172, the pixel electrode 171 may comprise or be formed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be formed as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, or a stacked structure of APC alloy and ITO (ITO / APC / ITO) to increase reflectivity. The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0124] The dam 190 is used to define the emission region EA of the pixel. In an embodiment, the dam 190 may expose a portion of the pixel electrode 171 on the second organic film 180. The dam 190 may cover the edge of the pixel electrode 171. The dam 190 may be disposed in the third contact hole CT3. That is, the third contact hole CT3 may be filled with the dam 190. The dam 190 may comprise, or be formed from, an organic film such as an acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0125] Spacer 191 may be disposed on dam 190. Spacer 191 may be used to support the mask during the process of manufacturing the light-emitting layer 172. Spacer 191 may comprise, or be formed of, an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0126] A light-emitting layer 172 is formed or disposed on the pixel electrode 171. The light-emitting layer 172 may include an organic material for emitting light of a predetermined color. In embodiments, for example, the light-emitting layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits the predetermined light and may be formed using phosphorescent or fluorescent materials.

[0127] A common electrode 173 is formed or disposed on the light-emitting layer 172. The common electrode 173 may be formed to cover the light-emitting layer 172. The common electrode 173 may be commonly formed in the emission regions EA1, EA2, EA3, and EA4 (see...). Figure 6 The common layer in the common electrode 173. The capping layer can be formed or disposed on the common electrode 173.

[0128] In embodiments with a top-emitting structure, the common electrode 173 may comprise, or be formed of, a transparent conductive material (TCO) such as ITO or IZO capable of transmitting light, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). In such embodiments where the common electrode 173 is formed of a semi-transmissive conductive material, luminous efficiency can be increased due to the microcavity effect.

[0129] An encapsulation layer ENC can be disposed on the light-emitting element layer EML. The encapsulation layer ENC may include at least one inorganic film TFE1 and TFE3 for preventing oxygen or moisture from penetrating into the light-emitting element layer EML. Additionally, the encapsulation layer ENC may include at least one organic film TFE2 for protecting the light-emitting element layer EML from foreign matter such as dust. In embodiments, for example, the encapsulation layer ENC may include a first encapsulation inorganic film TFE1, an encapsulation organic film TFE2, and a second encapsulation inorganic film TFE3.

[0130] A first encapsulating inorganic film TFE1 can be disposed on the common electrode 173, an encapsulating organic film TFE2 can be disposed on the first encapsulating inorganic film TFE1, and a second encapsulating inorganic film TFE3 can be disposed on the encapsulating organic film TFE2. The first encapsulating inorganic film TFE1 and the second encapsulating inorganic film TFE3 can be formed or defined by multiple films in which a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The encapsulating organic film TFE2 can be an organic film such as an acrylamide resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0131] The sensor electrode layer SENL can be disposed on the encapsulation layer ENC. The sensor electrode layer SENL may include sensor electrodes TE and RE.

[0132] The second buffer film BF2 can be disposed on the encapsulation layer ENC. The second buffer film BF2 may include at least one inorganic film. In an embodiment, for example, the second buffer film BF2 may be formed by a multilayer film in which multiple inorganic films selected from silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide layers are alternately stacked. In another embodiment, the second buffer film BF2 may be omitted.

[0133] The first connecting portion BE1 can be disposed on the second buffer film BF2. The first connecting portion BE1 can be formed or defined by a monolayer containing molybdenum (Mo), titanium (Ti), copper (Cu) or aluminum (Al), or it can be formed as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and indium tin oxide (ITO) (ITO / Al / ITO), an Ag-Pd-Cu (APC) alloy, or a stacked structure of APC alloy and ITO (ITO / APC / ITO).

[0134] The first sensor insulating film TINS1 may be disposed on the first connection portion BE1. The first sensor insulating film TINS1 may include, or be formed from, an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0135] The sensor electrodes (i.e., the driving electrode TE and the sensing electrode RE) can be disposed on the first sensor insulating film TINS1. Additionally, a dummy pattern can be disposed on the first sensor insulating film TINS1. The driving electrode TE, the sensing electrode RE, and the dummy pattern do not overlap with the emission region EA. The driving electrode TE, the sensing electrode RE, and the dummy pattern can be formed or defined by a monolayer comprising molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or can be formed as a stacked structure having aluminum and titanium (Ti / Al / Ti), a stacked structure having aluminum and indium tin oxide (ITO) (ITO / Al / ITO), an Ag-Pd-Cu (APC) alloy, or a stacked structure having an APC alloy and ITO (ITO / APC / ITO).

[0136] The second sensor insulating film TINS2 can be disposed on the driving electrode TE, the sensing electrode RE, and the dummy pattern. The second sensor insulating film TINS2 can include at least one selected from inorganic and organic films. The inorganic film can be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film can include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0137] Figure 6 yes Figure 2 A magnified view of region A.

[0138] Reference Figure 6 The display area DA may include multiple emission areas EA1, EA2, EA3, and EA4. The multiple emission areas EA1, EA2, EA3, and EA4 may include a first emission area EA1 emitting light of a first color, a second emission area EA2 emitting light of a second color, a fourth emission area EA4 emitting light of a third color, and a third emission area EA3 emitting light of a third color. In embodiments, for example, the first color light may be light in the red band from approximately 600 nanometers (nm) to approximately 750 nm, the second color light may be light in the green band from approximately 480 nm to approximately 560 nm, and the third color light may be light in the blue band from approximately 370 nm to approximately 460 nm, but this disclosure is not limited thereto.

[0139] although Figure 6 The illustration shows an embodiment where the second emission region EA2 and the fourth emission region EA4 emit light of the same color (i.e., light of the second color), but this disclosure is not limited thereto. The second emission region EA2 and the fourth emission region EA4 may emit light of different colors. In an embodiment, for example, the second emission region EA2 may emit light of the second color, and the fourth emission region EA4 may emit light of the fourth color.

[0140] In an embodiment, such as Figure 6As shown, each of the first transmission region EA1, the second transmission region EA2, the third transmission region EA3, and the fourth transmission region EA4 may have a rectangular planar shape, but this disclosure is not limited thereto. In embodiments, in the planar view, each of the first transmission region EA1, the second transmission region EA2, the third transmission region EA3, and the fourth transmission region EA4 may have a polygonal shape, a circular shape, or an elliptical shape other than a rectangular shape.

[0141] The third launch area EA3 can have the largest area, while the second launch area EA2 and the fourth launch area EA4 can have the smallest areas. The size of the second launch area EA2 can be the same as the size of the fourth launch area EA4.

[0142] The second transmission region EA2 and the fourth transmission region EA4 can be alternately arranged in the first direction (X-axis direction). The second transmission region EA2 can be arranged in the second direction (Y-axis direction). The fourth transmission region EA4 can be arranged in the second direction (Y-axis direction). Each of the fourth transmission regions EA4 can have a long side in the first diagonal direction and a short side in the second diagonal direction, while each of the second transmission regions EA2 can have a long side in the second diagonal direction and a short side in the first diagonal direction. The first diagonal direction can refer to the diagonal direction between the first direction (X-axis direction) and the second direction (Y-axis direction), and the second diagonal direction can be a direction orthogonal to the first diagonal direction.

[0143] The first transmission region EA1 and the third transmission region EA3 may be alternately arranged in a first direction (X-axis direction). The first transmission region EA1 may be arranged in a second direction (Y-axis direction). The third transmission region EA3 may be arranged in a second direction (Y-axis direction). Each of the first transmission region EA1 and the third transmission region EA3 may have a square planar shape, but this disclosure is not limited thereto. In an embodiment, each of the first transmission region EA1 and the third transmission region EA3 may include two sides parallel to each other in a first oblique direction and two sides parallel to each other in a second oblique direction.

[0144] The non-display area NDA includes a first non-display area NDA1 and a second non-display area NDA2. The first non-display area NDA1 may be a region in which a structure for driving pixels for the display area DA is disposed. The second non-display area NDA2 may be located outside the first non-display area NDA1. The second non-display area NDA2 may be an edge region of the non-display area NDA. Alternatively, the second non-display area NDA2 may be an edge region of the display panel 100.

[0145] The scan drive circuit unit SDC, the first power line VSL, the first dam DAM1 and the second dam DAM2 can be set in the first non-display area NDA1.

[0146] The scan drive circuit unit SDC may include multiple stages STA. Each stage STA can be connected to a scan line extending in the first direction (X-axis direction) of the display area DA. That is, multiple stages STA can be connected to the scan lines extending in the first direction (X-axis direction) of the display area DA in a one-to-one correspondence. Multiple stages STA can sequentially apply scan signals to multiple scan lines.

[0147] The first power line VSL can be disposed outside the scan drive circuit unit SDC. That is, the first power line VSL can be disposed closer to the edge EG of the display panel 100 than the scan drive circuit unit SDC. The first power line VSL can extend along the second direction (Y-axis direction) in the non-display area NDA on the right side of the display panel 100.

[0148] The first power line VSL can be electrically connected to the common electrode 173, so that the common electrode 173 can be supplied with a first source voltage from the first power line VSL.

[0149] The first dam DAM1 and the second dam DAM2 are structures used to prevent the encapsulating organic film TFE2 of the encapsulation layer ENC from overflowing into the edge EG of the display panel 100. The first dam DAM1 and the second dam DAM2 can extend along a second direction (Y-axis direction) in the non-display area NDA on the right side of the display panel 100. The second dam DAM2 can be disposed outside the first dam DAM1. The first dam DAM1 can be disposed closer to the scan drive circuit unit SDC than the second dam DAM2, and the second dam DAM2 can be disposed closer to the edge EG of the display panel 100 than the first dam DAM1.

[0150] although Figure 6 The illustration shows an embodiment where the first dam DAM1 and the second dam DAM2 are located on the first power line VSL, but this disclosure is not limited thereto. In another embodiment, for example, either the first dam DAM1 or the second dam DAM2 may not be located on the first power line VSL. Alternatively, both the first dam DAM1 and the second dam DAM2 may not be located on the first power line VSL. In such an embodiment, the first dam DAM1 and the second dam DAM2 may be located outside the first power line VSL.

[0151] although Figure 6 The illustrated display panel 100 includes an embodiment with two dams, DAM1 and DAM2, but the embodiments described herein are not limited thereto. That is, the display panel 100 according to another embodiment may include three or more dams.

[0152] The second non-display area NDA2 may include the crack dam (CRD) and the edge region (EGA).

[0153] The crack dam CRD can be a structure used to prevent cracks from forming during the process of cutting the substrate SUB during the manufacturing process of the display device 10. The crack dam CRD can be an outermost structure disposed at the outermost portion of the display panel 100. The crack dam CRD can be configured to surround a second dam DAM2 at the outermost portion of the display panel 100. In embodiments, for example, as... Figure 6 As illustrated, the crack dam CRD can extend along the second direction (Y-axis direction) in the non-display area NDA on the right side of the display panel 100. The crack dam CRD can be positioned in the second non-display area NDA2 closer to the edge EG than the second dam DAM2, and can be positioned between the second dam DAM2 and the edge area EGA.

[0154] Although not shown in the accompanying drawings, the crack dam CRD can extend in either the first direction (X-axis direction) or the second direction (Y-axis direction) on the outermost portion of the display panel 100, even outside the right side. Accordingly, the crack dam CRD can be configured to surround the second dam DAM2.

[0155] The edge region EGA can be set along the edge EG of the display panel 100. The edge region EGA can be an area left by processing marks generated in the process of cutting the substrate SUB.

[0156] In the embodiment, the distance D1 between the crack dam CRD and the edge EG (see...) Figure 7 The distance between the crack dam CRD and the edge region EGA can be approximately 130 μm or less, and the distance between the crack dam CRD and the edge region EGA can be approximately 80 μm or less. The minimum distance from the outermost crack dam CRD to the edge region EGA of the display panel 100 can vary depending on the width of the edge region EGA and the minimum distance from the crack dam CRD to the edge region EGA.

[0157] Figure 7 It shows along Figure 6 A cross-sectional view of an example display panel taken by line XC-XC'.

[0158] Figure 7 The illustration schematically shows a cross-section of the display panel 100 in which the substrate SUB of the display panel 100 is cut by irradiating a laser and then spraying an etchant during the manufacturing process of the display panel 100.

[0159] Reference Figure 7The edge region EGA can be the area formed on the top surface US of the substrate SUB by the irradiated laser when the substrate SUB is cut by irradiating a laser and then spraying an etchant. In an embodiment, the width of the edge region EGA can be less than or equal to about 50 μm, but is not limited thereto. In the display panel 100, the edge region EGA left by the laser processing traces can be formed along the edge EG with a width of about 50 μm or less.

[0160] The substrate SUB of the display panel 100 may include a top surface US on which a light-emitting element layer EML is disposed, a bottom surface BS on the opposite side of the top surface US, and curved side surfaces SS1 and SS2 connecting the top surface US and the bottom surface BS. The substrate SUB of the display panel 100 may include an edge EG that is the outermost protruding portion of the curved side surfaces SS1 and SS2, and the side surfaces SS1 and SS2 may include a first side surface SS1 between the edge EG and the top surface US and a second side surface SS2 between the edge EG and the bottom surface BS.

[0161] In the manufacturing process of the display device 10, the substrate SUB can be removed from the mother substrate MSUB (see [link to manufacturing process]) through laser irradiation and etching processes. Figure 14 Cutting. Here, the shapes of the side surfaces SS1 and SS2 of the substrate SUB of the display panel 100 can be designed to be illuminated onto the mother substrate MSUB (see...). Figure 14 The laser spot SPOT (see) Figure 15 The position is controlled by the mother substrate MSUB (see embodiment). According to an embodiment, during the manufacturing process of the display device 10, the position of the mother substrate MSUB is controlled by the mother substrate MSUB (see embodiment). Figure 14 In the process of cutting the substrate SUB, the laser spot SPOT is irradiated (see... Figure 15 The position of the substrate SUB can have a curved shape in three-dimensional space, and the side surfaces SS1 and SS2 of the cut substrate SUB can also have a curved shape.

[0162] In the process of cutting the substrate SUB, it can be made from the mother substrate MSUB (see...) Figure 14Laser and etching processes are performed on one side of the substrate SUB. The side surfaces SS1 and SS2 of the cut substrate SUB may include a side surface adjacent to the surface where the laser and etching processes are performed, and a side surface adjacent to the opposite surface where the laser and etching processes are not performed. In an embodiment, during the manufacturing process of the display device 10, a laser can be irradiated onto the bottom surface BS of the substrate SUB and an etching process can be performed thereon. The side surfaces SS1 and SS2 of the substrate SUB may include a first side surface SS1 adjacent to the top surface US and a second side surface SS2 adjacent to the bottom surface BS. The first side surface SS1 and the second side surface SS2 may have different degrees of exposure to the laser and etching processes during the cutting process of the substrate SUB, and may each have a certain curvature, and the shapes of the first side surface SS1 and the second side surface SS2 may be different from each other.

[0163] In an embodiment, the substrate SUB of the display panel 100 may include an outermost edge EG, a first side surface SS1 between the edge EG and the top surface US, and a second side surface SS2 between the edge EG and the bottom surface BS. The first side surface SS1 and the second side surface SS2 may each have a certain curvature and may be formed to bend from the ends of the top surface US and the bottom surface BS toward the edge EG.

[0164] The first side surface SS1 and the second side surface SS2 may each have a shape dependent on factors such as the laser spot SPOT irradiated during the laser process (see...). Figure 15 The curvature varies depending on the design of the position and spacing of the substrate SUB. In an embodiment, compared to the bottom surface BS, the edge EG of the substrate SUB of the display panel 100 may be positioned closer to the top surface US, rather than at the center in the thickness direction. Accordingly, the lengths of the first side surface SS1 and the second side surface SS2 may differ from each other. In an embodiment, for example, the length of the first side surface SS1 may be less than the length of the second side surface SS2, and the curvature of the first side surface SS1 may be greater than the curvature of the second side surface SS2. That is, the second side surface SS2 may have a curvature that is gentler than the curvature of the first side surface SS1.

[0165] Because the second side surface SS2, which is adjacent to the bottom surface BS of the display element (which does not have a light-emitting element layer such as EML), has a gentler curvature than the first side surface SS1, the substrate SUB can have greater impact resistance against external impacts.

[0166] If the side surfaces SS1 and SS2 of the substrate SUB of the display panel 100 have a vertical or inclined shape relative to the top surface US and the bottom surface BS, the resistance to external impacts may be low. In embodiments of the display device 10, the substrate SUB of the display panel 100 may have side surfaces SS1 and SS2 with relatively gentle curvatures from the top surface US and the bottom surface BS to improve resistance to external impacts. As mentioned above, the shapes of the side surfaces SS1 and SS2 may vary depending on the conditions of the laser irradiation and etching processes performed during the separation process of the substrate SUB in the manufacturing process of the display device 10. A more detailed description of this will be provided later along with the manufacturing process.

[0167] The position of the edge EG can also depend on the laser spot SPOT irradiated during the substrate SUB cutting process (see...). Figure 15 The design of the laser process varies depending on the process conditions of the etching process performed after the laser process.

[0168] In an embodiment, during the manufacturing process of the display panel 100, the substrate SUB of the display panel 100 can be cut by irradiating a laser and then spraying an etchant, and the first side surface SS1 and the second side surface SS2 of the display panel 100 can be etched by the etchant. The roughness of the first side surface SS1 and the second side surface SS2 of the display panel 100 can be approximately 0.5 μm or less. In the embodiment where the substrate SUB of the display panel 100 is cut by irradiating a laser and then spraying an etchant, the roughness of the first side surface SS1 and the second side surface SS2 of the display panel 100 can be relatively smaller than in the case where the substrate SUB is cut by a cutting member and then a polishing process is performed.

[0169] As described above, since the etching process in the substrate SUB cutting process starts from the bottom surface BS of the substrate SUB, the first side surface SS1 and the second side surface SS2 of the display panel 100 can have different degrees of exposure to the etchant. Accordingly, the roughness of the first side surface SS1 and the roughness of the second side surface SS2 of the display panel 100 can be different from each other. In an embodiment, for example, the roughness of the first side surface SS1 and the roughness of the second side surface SS2 of the display panel 100 can differ from each other by about 1% to about 20%.

[0170] Figure 8 It shows along Figure 6 A cross-sectional view of another example of a display panel, taken by line XC-XC'.

[0171] Reference Figure 8In another embodiment, the edge EG can be located at the midpoint of the total thickness of the substrate SUB or at the center of the third direction, and the first side surface SS1 and the second side surface SS2 can have substantially the same curvature and substantially the same length. The first side surface SS1 and the second side surface SS2 can have a shape symmetrical with respect to the edge EG. As a result, the side surfaces SS1 and SS2 of the substrate SUB can have a shape with uniform curvature, and can further improve resistance to external impacts.

[0172] Figure 9 yes Figure 7 A magnified view of region C.

[0173] Reference Figure 9 The first power line VSL may be made of the same material as the first data metal layer including the first connecting electrode CE1 and the data line, and may be disposed in the same layer as each other (or directly disposed on the same layer). The first power line VSL may be disposed on the second interlayer insulating film 142. The first power line VSL may be formed as a single layer or multiple layers comprising at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or alloys thereof.

[0174] The first dam DAM1 and the second dam DAM2 can be installed on the first power line VSL. The first dam DAM1 can include a first sub-dam SDAM1 and a second sub-dam SDAM2, and the second dam DAM2 can include the first sub-dam SDAM1, the second sub-dam SDAM2, and a third sub-dam SDAM3. The first sub-dam SDAM1 and the first organic membrane 160 can include the same material and can be installed in the same layer as each other (or directly on the same layer). The second sub-dam SDAM2 and the second organic membrane 180 can include the same material and can be installed in the same layer as each other (or directly on the same layer). The third sub-dam SDAM3 can include the same material as the dike 190 and can be installed in the same layer as each other (or directly on the same layer).

[0175] The height of the first dam DAM1 may be lower than the height of the second dam DAM2, but this disclosure is not limited thereto. The height of the first dam DAM1 may be substantially the same as or higher than the height of the second dam DAM2.

[0176] The common electrode 173 can be connected to a first electric line VSL that is exposed by the first organic membrane 160, the second organic membrane 180, and the first dam DAM1 but not covered by them. Accordingly, the common electrode 173 can be supplied with a first source voltage for the first electric line VSL.

[0177] The first encapsulated inorganic film TFE1 can cover the first dam DAM1, the second dam DAM2 and the crack dam CRD in the non-display area NDA on the left side of the display panel 100.

[0178] The encapsulating organic film TFE2 can be configured to cover the top surface of the first dam DAM1 but not the top surface of the second dam DAM2. However, this disclosure is not limited thereto. The encapsulating organic film TFE2 may not cover either the top surface of the first dam DAM1 or the top surface of the second dam DAM2. Due to the first dam DAM1 and the second dam DAM2, the encapsulating organic film TFE2 may not overflow to the edge EG of the display panel 100.

[0179] The second encapsulated inorganic film TFE3 can cover the first dam DAM1, the second dam DAM2 and the crack dam CRD in the non-display area NDA on the left side of the display panel 100.

[0180] The inorganic encapsulation region where the first encapsulating inorganic film TFE1 and the second encapsulating inorganic film TFE3 are in contact with each other can be formed from the second dam DAM2 to the area adjacent to the edge EG of the display panel 100. The inorganic encapsulation region can be configured to surround the second dam DAM2. The display panel 100 may include an encapsulation layer ENC extending to the edge EG and a crack dam CRD disposed at the outermost portion, thereby ensuring the reliability of the inorganic film directly disposed on the substrate SUB of the display panel 100. In an embodiment of the display panel 100 of the display device 10, the first encapsulating inorganic film TFE1 and the second encapsulating inorganic film TFE3 of the encapsulation layer ENC can extend to the edge EG of the display panel 100, and the edge region EGA can overlap with the encapsulation layer ENC.

[0181] The crack dam CRD may comprise the same material as the first organic membrane 160, but may be disposed on the buffer membrane BF. However, it is not limited thereto, and similar to the first organic membrane 160, the crack dam CRD may be disposed on the second interlayer insulating membrane 142. The crack dam CRD may comprise, or be formed from, an organic membrane such as an acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. In embodiments, the width of the crack dam CRD may be approximately 30 μm or less.

[0182] although Figure 9 The illustrated crack dam CRD includes an embodiment of an organic membrane, but this disclosure is not limited thereto. In embodiments, for example, the crack dam CRD may further include another organic membrane comprising the same material as the second organic membrane 180. Alternatively, the crack dam CRD may further include another organic membrane comprising the same material as the dam 190. Alternatively, the crack dam CRD may further include another organic membrane comprising the same material as the spacer 191.

[0183] In addition, Figure 9 In the diagram, the scanning thin-film transistor (STFT) of the scan drive circuit unit SDC is shown as an example. Because the scanning thin-film transistor STFT is combined with... Figure 5 The thin-film transistors (TFTs) described are essentially the same, therefore any repetitive detailed descriptions of scanning thin-film transistors (STFTs) will be omitted. For example, a scanning thin-film transistor (STFT) may include a gate electrode (STG), a channel region (STCH), a source region (STS), and a drain region (STD).

[0184] Figure 10 yes Figure 2 A magnified view of region B. Figure 11 It is along Figure 10 The cross-sectional view taken from line XD-XD'. Figure 12 yes Figure 11 A magnified view of region D.

[0185] Reference Figures 10 to 12 According to an embodiment, the display panel 100 includes an inorganic encapsulation region IEA surrounding a through-hole TH and a wiring region WLA surrounding the inorganic encapsulation region IEA.

[0186] The first encapsulation inorganic film TFE1 and the second encapsulation inorganic film TFE3 of the encapsulation layer ENC can be in contact with each other, and the inorganic encapsulation region IEA can be a layer used to prevent oxygen or moisture from penetrating into the light-emitting element layer EML of the display layer DISL through the via TH.

[0187] The inorganic encapsulation region (IEA) may include at least one dam, at least one tip, and at least one recess. In embodiments, for example, such as... Figure 12 As illustrated, the inorganic packaging area IEA may include a first dam HDAM1, a second dam HDAM2, a first tip T1 to an eighth tip T8, and a first groove GR1 to a third groove GR3.

[0188] The first tip T1 and the second tip T2 can be positioned closer to the wiring area WLA than the first hole dam HDAM1. The first tip T1 can be positioned closer to the wiring area WLA than the second tip T2. The second tip T2 can be positioned between the first tip T1 and the first hole dam HDAM1.

[0189] The third tip T3, the fourth tip T4, the fifth tip T5, and the sixth tip T6 can be located between the first dam HDAM1 and the second dam HDAM2. At least a portion of the third tip T3 can overlap with the first dam HDAM1 in the third direction (Z-axis direction).

[0190] The seventh tip T7 and the eighth tip T8 may be positioned closer to the through-hole TH than the second hole dam HDAM2. At least a portion of the seventh tip T7 may overlap with the second hole dam HDAM2 in the third direction (Z-axis direction). The distance between the eighth tip T8 and the through-hole TH may be approximately 50 μm, but is not limited to this.

[0191] The first groove GR1 can be defined between the first tip T1 and the second tip T2. The second groove GR2 can be defined between the third tip T3 and the fourth tip T4. The third groove GR3 can be defined between the fifth tip T5 and the sixth tip T6.

[0192] The wiring area WLA can be an area where bypass lines are configured due to vias TH. Some of these bypass lines can connect to data lines, and some others can connect to second power lines to which a second source voltage higher than the first source voltage is applied. Still others can connect to scan lines. The wiring area WLA can be surrounded by the display area DA.

[0193] Figure 11 The illustration schematically shows a cross-section of the edge TEG of the through-hole TH of the substrate SUB of the display panel 100, which is cut by irradiating a laser and then spraying an etchant during the manufacturing process of the display panel 100.

[0194] like Figure 11 As shown, when a substrate SUB is cut by irradiating a laser and then spraying an etchant, the via edge region TEGA can be the area on the top surface US of the substrate SUB formed by the irradiated laser, representing the processing trace. In an embodiment, the width of the via edge region TEGA can be less than or equal to approximately 50 μm, but is not limited thereto. In the display panel 100, the via edge region TEGA left by the laser processing can be formed along the edge TEG of the via TH with a width of approximately 50 μm or less.

[0195] The substrate SUB of the display panel 100 may include curved via side surfaces TSS1 and TSS2 connected to the top surface US and the bottom surface BS. The substrate SUB of the display panel 100 may include the edge TEG of the outermost protruding portion of the via TH on the curved via side surfaces TSS1 and TSS2, and the via side surfaces TSS1 and TSS2 may include a first via side surface TSS1 between the edge TEG of the via TH and the top surface US, and a second via side surface TSS2 between the edge TEG of the via TH and the bottom surface BS.

[0196] The side surfaces SS1 and SS2 of the substrate SUB of the display panel 100 (see...) Figure 7Similarly, in the manufacturing process of display device 10, the shapes of the through-hole side surfaces TSS1 and TSS2 can also be determined based on the surface irradiated onto the mother substrate MSUB (see...). Figure 14 The laser spot SPOT (see) Figure 15 The position of the component is controlled by the design of the component. According to an embodiment, during the manufacturing process of the display device 10, the component is transferred from the mother substrate MSUB (see...) Figure 14 In the process of cutting the substrate SUB, the laser spot SPOT is irradiated (see... Figure 15 The position of the substrate SUB can have a curved shape in three-dimensional space, and the through-hole side surfaces TSS1 and TSS2 of the cut substrate SUB can also have a curved shape.

[0197] In the process of cutting the substrate SUB, it can be made from the mother substrate MSUB (see...) Figure 14 Laser and etching processes are performed on one side of the substrate SUB. The via-side surfaces TSS1 and TSS2 of the cut substrate SUB may include a side surface adjacent to the surface where the laser and etching processes are performed, and a side surface adjacent to the opposite surface where the laser and etching processes are not performed. In an embodiment, during the manufacturing process of the display device 10, a laser can be irradiated onto the bottom surface BS of the substrate SUB and an etching process can be performed thereon. The via-side surfaces TSS1 and TSS2 of the substrate SUB may include a first via-side surface TSS1 adjacent to the top surface US and a second via-side surface TSS2 adjacent to the bottom surface BS. The first via-side surface TSS1 and the second via-side surface TSS2 may have different degrees of exposure to the laser and etching processes during the cutting process of the substrate SUB, and may each have a certain curvature and their shapes may be different from each other.

[0198] In an embodiment, the substrate SUB of the display panel 100 may include an edge TEG of the through-hole TH, a first through-hole side surface TSS1 between the edge TEG of the through-hole TH and the top surface US, and a second through-hole side surface TSS2 between the edge TEG of the through-hole TH and the bottom surface BS. The first through-hole side surface TSS1 and the second through-hole side surface TSS2 may each have a certain curvature and may be formed to bend from the ends of the top surface US and the bottom surface BS toward the edge TEG of the through-hole TH.

[0199] The first via side surface TSS1 and the second via side surface TSS2 can each have a shape dependent on factors such as the laser spot SPOT irradiated during the laser process (see...). Figure 15The curvature varies depending on the design of the position and spacing of the vias. In an embodiment, compared to the bottom surface BS, the edge TEG of the via TH of the substrate SUB of the display panel 100 can be positioned closer to the top surface US, rather than at the center in the thickness direction. Accordingly, the lengths of the first via side surface TSS1 and the second via side surface TSS2 can be different from each other. In an embodiment, for example, the length of the first via side surface TSS1 can be less than the length of the second via side surface TSS2, and the curvature of the first via side surface TSS1 can be greater than the curvature of the second via side surface TSS2. That is, the second via side surface TSS2 can have a curvature that is gentler than the curvature of the first via side surface TSS1.

[0200] Because the second via side surface TSS2, which is adjacent to the bottom surface BS of the display element (which does not have a light-emitting element layer such as EML), has a gentler curvature than the first via side surface TSS1, the substrate SUB can have greater impact resistance against external impacts.

[0201] If the via-side surfaces TSS1 and TSS2 of the substrate SUB of the display panel 100 have a vertical or inclined shape relative to the top surface US and the bottom surface BS, the resistance to external impacts may be low. In embodiments of the display device 10, the substrate SUB of the display panel 100 may have via-side surfaces TSS1 and TSS2 with relatively gentle curvatures from the top surface US and the bottom surface BS to improve resistance to external impacts. As mentioned above, the shape of the via-side surfaces TSS1 and TSS2 can vary depending on the conditions of the laser irradiation and etching processes performed during the separation process of the substrate SUB in the manufacturing process of the display device 10. A more detailed description of this will be provided later along with the manufacturing process.

[0202] The position of the via edge TEG can also depend on the laser spot SPOT irradiated during the substrate SUB cutting process (see...). Figure 15 The design of the laser process varies depending on the process conditions of the etching process performed after the laser process.

[0203] In an embodiment, during the manufacturing process of the display panel 100, the substrate SUB of the display panel 100 can be cut by irradiating a laser and then spraying an etchant, and the first through-hole side surface TSS1 and the second through-hole side surface TSS2 of the display panel 100 can be etched by the etchant. The roughness of the first through-hole side surface TSS1 and the second through-hole side surface TSS2 of the display panel 100 can be approximately 0.5 μm or less. In the embodiment where the substrate SUB of the display panel 100 is cut by irradiating a laser and then spraying an etchant, the roughness of the first through-hole side surface TSS1 and the second through-hole side surface TSS2 of the display panel 100 can be relatively smaller than in the case where the substrate SUB is cut by a cutting member and then a polishing process is performed.

[0204] In the embodiments, as described above, since the etching process in the substrate SUB cutting process starts from the bottom surface BS of the substrate SUB, the first via-hole side surface TSS1 and the second via-hole side surface TSS2 of the display panel 100 can have different degrees of exposure to the etchant. Accordingly, the roughness of the first via-hole side surface TSS1 and the roughness of the second via-hole side surface TSS2 of the display panel 100 can be different from each other. In the embodiments, for example, the roughness of the first via-hole side surface TSS1 and the roughness of the second via-hole side surface TSS2 of the display panel 100 can differ from each other by about 1% to about 20%.

[0205] In another embodiment, although not shown in the drawings, the side surfaces SS1 and SS2 of the substrate SUB of the display panel 100 (see...) Figure 8 Similarly, the edge TEG of the through-hole TH can be positioned at the midpoint of the total thickness of the substrate SUB, and the first through-hole side surface TSS1 and the second through-hole side surface TSS2 can have the same curvature and the same length. The first through-hole side surface TSS1 and the second through-hole side surface TSS2 can have a shape symmetrical with respect to the edge TEG of the through-hole TH. As a result, the through-hole side surfaces TSS1 and TSS2 of the substrate SUB can have a shape with uniform curvature, and can further improve resistance to external impacts.

[0206] In an embodiment, such as Figure 5 and Figure 12As illustrated, the first dummy pattern DP1 may be made of the same material as the second gate metal layer of the second capacitor electrode CAE2, which includes the capacitor Cst, and may be disposed in the same layer (or directly on the same layer). In an embodiment, for example, the first dummy pattern DP1 may be disposed on the first interlayer insulating film 141. The first dummy pattern DP1 may be formed as a single layer or multiple layers comprising, or defined by, at least one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0207] The second dummy pattern DP2 may be made of the same material as the first data metal layer including the first connecting electrode CE1 and the data line, and may be disposed in the same layer (or directly on the same layer). In an embodiment, for example, the second dummy pattern DP2 may be disposed on the second interlayer insulating film 142. The second dummy pattern DP2 may be formed as a single layer or multiple layers comprising at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or alloys thereof.

[0208] The second dummy pattern DP2 can overlap with the first dummy pattern DP1 in the third direction (Z-axis direction).

[0209] The first tip T1 to the eighth tip T8 may be made of the same material as the second data metal layer including the second connection electrode CE2, and may be disposed on the same layer. In an embodiment, for example, the first tip T1 to the eighth tip T8 may be disposed on the first organic film 160. The first tip T1 to the eighth tip T8 may be formed as a single layer or multiple layers comprising at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or alloys thereof.

[0210] Each of the first tips T1 to the eighth tips T8 can be connected to the second dummy pattern DP2 through a contact hole defined by the first organic membrane 160. Each of the first tips T1 to the eighth tips T8 may include an eaves structure in which the top and bottom surfaces are exposed by the first organic membrane 160, the second organic membrane 180, the first dam HDAM1, and the second dam HDAM2, but not covered by the first organic membrane 160, the second organic membrane 180, the first dam HDAM1, and the second dam HDAM2. The fourth tip T4 and the fifth tip T5 may be integrally formed as a single, unified, and indivisible part. Each of the first tips T1 to the eighth tips T8 may be a protruding pattern or groove pattern for forming a recess (or trench). The eighth tip T8 may be the outermost structure adjacent to the edge TEG of the through hole TH. Figure 12In the illustration, the eighth tip T8 is shown as the outermost structure adjacent to the edge TEG of the via TH, but this disclosure is not limited thereto. In an embodiment, for example, if the seventh tip T7 and the eighth tip T8 are omitted, the outermost structure adjacent to the edge TEG of the via TH may be a second dam HDAM2 for preventing the overflow of the encapsulation organic film TFE2 of the encapsulation layer ENC. In another embodiment, if the seventh tip T7 and the eighth tip T8 are omitted, the outermost structure adjacent to the edge TEG of the via TH may be a groove for cutting off the light-emitting layer 172 and the common electrode 173.

[0211] The distance from the eighth tip T8 to the edge TEG of the via TH can be approximately 300 μm, but is not limited to this. The via edge region TEGA can be located between the eighth tip T8 and the edge TEG of the via TH.

[0212] The first groove GR1 can be formed between the first tip T1 and the second tip T2, the second groove GR2 can be formed between the third tip T3 and the fourth tip T4, and the third groove GR3 can be formed between the fifth tip T5 and the sixth tip T6. The first groove GR1 can have an eaves structure formed by the first tip T1 and the second tip T2, the second groove GR2 can have an eaves structure formed by the third tip T3 and the fourth tip T4, and the third groove GR3 can have an eaves structure formed by the fifth tip T5 and the sixth tip T6.

[0213] In one embodiment, the light-emitting layer 172 is deposited by evaporation and the common electrode 173 is deposited by sputtering, such that the light-emitting layer 172 and the common electrode 173 can be configured to be discontinuous at each of the first to third grooves GR1, GR2, and GR3 due to the low step coverage. In such an embodiment, the first encapsulated inorganic film TFE1 and the third encapsulated inorganic film TFE3 can be deposited by chemical vapor deposition or atomic layer deposition, and therefore can be formed as continuous without discontinuity at each of the first to third grooves GR1, GR2, and GR3 due to the high step coverage. Step coverage refers to the ratio of the degree of film coated on the inclined portion to the degree of film coated on the flat portion. The light-emitting layer 172, the discontinuous light-emitting layer residue 172_D, the common electrode 173, and the discontinuous common electrode residue 173_D can be respectively disposed in the first to third grooves GR1, GR2, and GR3.

[0214] The first sub-dam HDAM1 may include first sub-dams to fourth sub-dams HDA1, HDA2, HDA3, and HDA4. The first sub-dam HDA1 may be disposed on the first organic membrane 160 and may contain the same material as the second organic membrane 180. The first sub-dam HDA1 may be disposed on the second tip T2 and the third tip T3. The second sub-dam HDA2 may be disposed on the first sub-dam HDA1 and may contain the same material as the dam 190. The third sub-dam HDA3 and the fourth sub-dam HDA4 may be disposed on the second sub-dam HDA2 and may contain the same material as the spacer 191, but are not limited thereto. The fourth sub-dam HDA4 may be disposed closer to the through-hole TH than the third sub-dam HDA3. The thickness of the fourth sub-dam HDA4 may be greater than the thickness of the third sub-dam HDA3.

[0215] The second dam HDAM2 may include fifth to seventh subdams HDA5, HDA6, and HDA7. The fifth subdam HDA5 may be disposed on the first organic membrane 160 and may contain the same material as the second organic membrane 180. The fifth subdam HDA5 may be disposed on the seventh tip T7. The sixth subdam HDA6 may be disposed on the fifth subdam HDA5 and may contain the same material as the dike 190. The seventh subdam HDA7 may be disposed on the sixth subdam HDA6 and may contain the same material as the spacer 191, but is not limited thereto.

[0216] Overflow of the encapsulated organic membrane TFE2 into the through-hole TH can be effectively prevented by the first dam HDAM1 and the second dam HDAM2.

[0217] The light-emitting layer 172, the common electrode 173, the first encapsulation inorganic film TFE1, and the second encapsulation inorganic film TFE3 can extend to the edge TEG of the through-hole TH. The end of the light-emitting layer 172, the end of the common electrode 173, the end of the first encapsulation inorganic film TFE1, or the end of the second encapsulation inorganic film TFE3 can coincide with the edge TEG of the through-hole TH.

[0218] In an embodiment, such as Figure 12 As illustrated, since the light-emitting layer 172 and the common electrode 173 are disconnected in the first to third grooves GR1, GR2 and GR3 formed by the first tip T1 to the eighth tip T8 respectively, it is possible to effectively prevent the light-emitting layer 172 and the common electrode 173 exposed through the through hole TH from becoming a path for oxygen or moisture to permeate through them.

[0219] Hereinafter, a method for manufacturing a display device 10 according to an embodiment will be described.

[0220] Figure 13 This is a flowchart illustrating a method for manufacturing a display device according to an embodiment. Figure 14 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S100. Figure 15 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S200. Figure 16 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S300. Figure 17 and Figure 18 It is shown Figure 13 A cross-sectional view of the display unit and the area interposed therebetween in process S400. Figure 19 It is shown Figure 13 A cross-sectional view of the dam and the area inserted therebetween in process S100. Figure 20 It is shown Figure 13 A cross-sectional view of the dam and the area inserted therein in process S200. Figure 21 It is shown Figure 13 A cross-sectional view of the orifice dam and the area inserted therebetween in process S300. Figure 22 and Figure 23 It is shown Figure 13 A cross-sectional view of the orifice dam and the area inserted therebetween in process S400.

[0221] Reference Figures 13 to 23 The display device manufacturing method S1 according to the embodiment may include: forming a plurality of display units on a first surface of a mother substrate and attaching a first protective film to each of the plurality of display units (process S100); irradiating a laser on a second surface opposite to the first surface of the mother substrate to form a cutting line along the periphery of each of the plurality of display units and the periphery of a hole dam (process S200); attaching a second protective film and spraying an etchant on the second surface of the mother substrate to reduce the thickness of the mother substrate and cutting the mother substrate along the cutting line (process S300); and removing the second protective film and dummy components (process S400).

[0222] The display device 10 can be formed by a process of separating multiple substrates SUB, each having a display unit DPC formed thereon, from a mother substrate MSUB on which the multiple display units DPC are formed. The process of separating the multiple substrates SUB from the mother substrate MSUB may include a process of irradiating the substrates SUB with a laser and a process of etching the mother substrate MSUB. The display device 10 can be manufactured by performing a laser process, and accordingly, the area of ​​the substrates SUB where the display units DPC are not disposed can be minimized. According to an embodiment, in the manufacturing process of the display device 10, by designing the position of the laser spot SPOT formed in the irradiation laser LR process, the shape of the side surface of the substrate SUB cut from the mother substrate MSUB can be formed to be curved. Accordingly, in embodiments of the display device 10, the substrates SUB of the display panel 100 can have high resistance to external impacts.

[0223] First, such as Figure 14 and Figure 19 As shown, in process S100, multiple display units DPCs are formed on the first surface of the mother substrate MSUB, multiple first protective films PRF1 are attached to the multiple display units DPCs, and the multiple display units DPCs are inspected.

[0224] Each of the multiple display cells (DPCs) has a display layer (DISL) formed on a first surface (e.g., top surface US) of the mother substrate (MSUB). The display layer (DISL) includes a thin-film transistor layer (TFTL), a light-emitting element layer (EML), an encapsulation layer (ENC), and a sensor electrode layer (SENL). The structure of the display layer (DISL) is the same as that described above, and any repeated detailed descriptions will be omitted.

[0225] Subsequently, a first protective film layer is attached to cover the plurality of display units (DPCs) and the mother substrate (MSUB) disposed between the plurality of display units (DPCs). Then, by removing a portion of the first protective film layer disposed on the mother substrate (MSUB), a plurality of first protective films (PRF1) can be respectively disposed on the plurality of display units (DPCs). A portion of the first protective film layer can be removed, and its remaining portion can define the plurality of first protective films (PRF1). The plurality of first protective films (PRF1) can be respectively disposed on the plurality of display units (DPCs). The plurality of first protective films (PRF1) can be disposed in a one-to-one correspondence with the plurality of display units (DPCs).

[0226] Each of the plurality of first protective films PRF1 can be a buffer film used to protect the plurality of display units (DPCs) from external impacts. The plurality of first protective films PRF1 can include or be made of transparent material.

[0227] Then, an inspection device is used to inspect multiple display unit DPCs. After connecting probes to multiple test pads provided on each of the multiple display unit DPCs, an illumination test can be performed on each of the multiple display unit DPCs.

[0228] In an embodiment where a lamp-on test is performed after separating multiple display unit DPCs from the mother substrate MSUB via a cutting process, an additional process for removing multiple test pads may be performed after the lamp-on test is completed. In another embodiment, if the lamp-on test is performed on the mother substrate MSUB before separating the multiple display unit DPCs from the mother substrate MSUB, the multiple test pads are removed when the multiple display unit DPCs can later be separated from the mother substrate MSUB by laser irradiation and etching. Correspondingly, when the lamp-on test is performed on the mother substrate MSUB, the additional process for removing the multiple test pads is not performed.

[0229] Next, as Figure 15 and Figure 20 As shown, in process S200, a laser LR is irradiated on a second surface (e.g., the bottom surface BS) of the mother substrate MSUB opposite to the first surface to form a laser spot SPOT along the edges of the plurality of display units DPCs. The laser LR can be generated by a laser device LD. (See below for further details.) Figure 24 Provide a description of the laser device LD.

[0230] Cutting lines can be drawn or marked by irradiating a laser (LR) to form multiple laser spots (SPOT) along the edges of multiple display units (DPCs) (between adjacent display units DPCs). The cutting lines can be formed along the edges of multiple display units DPCs.

[0231] Various lasers can be used as lasers (LR) for drawing cutting lines. According to an embodiment, the laser LR can be a Bessel beam with a wavelength in the infrared range of approximately 1030 nm. The laser LR can have a repetition frequency in the range of approximately 10 kHz to approximately 1000 kHz, a pulse duration in the range of approximately 300 femtoseconds (fs) to approximately 10 picoseconds (ps), and a pulse energy in the range of approximately 10 microjoules (μJ) to approximately 500 μJ. Here, the pulse energy can be a processing energy of approximately 10 μJ or less per laser spot (SPOT). When a laser LR with the aforementioned specifications irradiates a mother substrate (MSUB), the length of the laser spot (SPOT) in the thickness direction of the mother substrate (MSUB) can be in the range of approximately 20 μm to approximately 25 μm.

[0232] According to an embodiment, a laser LR irradiates the second surface of a mother substrate MSUB, and the laser LR can form multiple laser spots SPOT in the three-dimensional space of the mother substrate MSUB. The multiple laser spots SPOT can be formed to be spaced apart from each other in the three-dimensional space. The laser LR can irradiate the mother substrate MSUB through optical devices such as diffractive optical elements (DOE) or spatial laser modulators (SLM), and the laser LR can simultaneously form multiple laser spots SPOT in the three-dimensional space of the mother substrate MSUB.

[0233] Multiple laser spot points (SPOTs) can be formed to have specific trajectories in the three-dimensional space of the mother substrate (MSUB). Adjacent laser spot points (SPOTs) can be spaced apart from each other at regular (or irregular) intervals in three-dimensional space, and multiple consecutive laser spot points (SPOTs) can be formed along regular (or irregular) trajectories. In the etching process performed after the laser irradiation process, the etchant can penetrate the laser spot points (SPOTs) and etch the mother substrate (MSUB), and the mother substrate (MSUB) can be cut along the trajectory of the laser spot points (SPOTs).

[0234] The shapes of the side surfaces SS1 and SS2 and the via side surfaces TSS1 and TSS2 of the substrate SUB cut from the mother substrate MSUB can vary in accordance with the trajectory along which the laser spot SPOT has been formed. In the method for manufacturing the display device 10 according to the embodiment, the plurality of laser spots SPOT formed in the process of irradiating the mother substrate MSUB with laser LR can have a trajectory with a certain curvature in three-dimensional space, and the cut substrate SUB can have curved side surfaces SS1 and SS2 and curved via side surfaces TSS1 and TSS2.

[0235] Next, as Figure 16 and Figure 21 As shown, in process S300, the second protective film PRF2 can be attached to multiple first protective films PRF1, and the etchant can be sprayed onto the second surface of the mother substrate MSUB without using a separate mask to etch the mother substrate MSUB.

[0236] The second protective film PRF2 can be attached to multiple first protective films PRF1 and the exposed mother substrate MSUB not covered by the multiple first protective films PRF1. The second protective film PRF2 can cover the area where the laser spot SPOT has been formed. The second protective film PRF2 can be an acid-resistant film used to protect multiple display units DPCs from the etchant during the etching process of the mother substrate MSUB to be performed in the next process.

[0237] The mother substrate (MSUB) can be etched by spraying etchant onto a second surface without using a separate mask. In etch processes using etchant, the thickness of the mother substrate (MSUB) can be reduced, and the mother substrate (MSUB) can be cut along multiple laser spots (SPOT).

[0238] When the etchant is sprayed onto the second surface of the master substrate MSUB, the thickness of the master substrate MSUB can be reduced. Since the master substrate MSUB is etched without a separate mask, isotropic etching can be performed in which all areas of the second surface of the master substrate MSUB, including the area where the laser spot SPOT has been formed, are uniformly etched.

[0239] In such an embodiment, when the thickness of the mother substrate MSUB is reduced by etchant, when the etchant penetrates multiple laser spots formed by laser LR, due to the multiple laser spots, a difference in etching rate can occur between the areas where laser spots have been formed and the areas where laser spots have not yet been formed.

[0240] In the MSUB mother substrate, since the laser spot (SPOT) is formed in the area irradiated by the laser (LR), the surface area of ​​this area can be increased compared to the area not irradiated by the laser (LR). Because the area irradiated by the laser (LR) has a larger surface area than other areas, the contact area with the etchant can be increased, thereby achieving a faster etching rate. Furthermore, the material properties of the MSUB mother substrate can be altered in the area irradiated by the laser (LR). The portion of the MSUB irradiated by the laser (LR) can have a bond with higher etchant reactivity than other portions, thereby achieving a faster etching rate.

[0241] Therefore, the mother substrate MSUB can undergo anisotropic etching where the etching rate in the area where the laser spot SPOT has been formed is faster than the etching rate in the area where the laser spot SPOT has not yet been formed. As a result, in the substrate SUB separated from the mother substrate MSUB, the side surfaces SS1 and SS2 and the via side surfaces TSS1 and TSS2 can have a curved shape similar to the laser spot SPOT, but can be etched further than the area where the laser spot SPOT has been formed. In an embodiment, the curvature of the trajectory of the laser spot SPOT formed on the mother substrate MSUB during the manufacturing process of the display device 10 can be different from the curvature of the side surfaces SS1 and SS2 and the via side surfaces TSS1 and TSS2 of the substrate SUB in the display panel 100 of the display device 10. This is because the curvature of the curved surfaces changes due to the difference in etching rates when the mother substrate MSUB is etched along the laser spot SPOT.

[0242] Additionally, an etching process can be performed on the second surface (e.g., the bottom surface BS) of the mother substrate MSUB, which is the surface irradiated by the laser LR. Accordingly, in the mother substrate MSUB, there can be a difference in etching rate between areas where a laser spot (SPOT) has been formed and areas where a laser spot (SPOT) has not yet been formed, but there can also be a difference in etching rate between the second surface (e.g., the bottom surface BS) and the first surface (e.g., the top surface US) of the mother substrate MSUB. In the mother substrate MSUB, the etching rate of the second surface can be faster than that of the first surface, and more of the area can be etched along the laser spot (SPOT).

[0243] In other words, in a substrate SUB cut from a mother substrate MSUB, a difference in curvature and a difference in the size of the glass holes on the surfaces may occur between a first side surface SS1 (or a first via side surface TSS1) adjacent to the top surface US and a second side surface SS2 (or a second via side surface TSS2) adjacent to the bottom surface BS, due to the difference in etching rates. In an embodiment, for example, because the etchant penetrates from the second surface, the second side surface SS2 (or the second via side surface TSS2) adjacent to the bottom surface BS of the substrate SUB, which is the second surface of the mother substrate MSUB, may have a curvature that is gentler than that of the first side surface SS1 (or the first via side surface TSS1) adjacent to the top surface US of the substrate SUB, which is the first surface of the mother substrate MSUB. Furthermore, the size of the glass holes formed on the surface of the second side surface SS2 (or the second via side surface TSS2) may be smaller than the size of the glass holes formed on the surface of the first side surface SS1 (or the first via side surface TSS1). This description is the same as the description provided above.

[0244] Because the first surface of the mother substrate MSUB is not penetrated by the etchant due to the second protective film, but the second surface of the mother substrate MSUB is etched by the etchant, the first and second surfaces of the mother substrate MSUB can have differences in roughness, hardness, light transmittance, light reflectance, local density, or surface chemical structure, etc. In an embodiment, for example, indentations may appear due to the etchant in the second surface of the mother substrate MSUB.

[0245] Next, as Figure 17 , Figure 18 , Figure 22 and Figure 23 As shown, in process S400, the second protective film PRF2 can be removed after the etching process is completed.

[0246] The dummy element (DUM) sheet remaining from the cutting of the mother substrate (MSUB) between the display units (DPC) and from the formation of the through-hole (TH) can be removed together with the second protective film (PRF2). However, this disclosure is not limited thereto, and the dummy element (DUM) sheet can be removed separately from the second protective film (PRF2).

[0247] In the following text, embodiments of the equipment used in the laser cutting process for manufacturing the display device 10 will be described.

[0248] Figure 24 This is a cross-sectional view showing an apparatus for manufacturing a display device according to an embodiment.

[0249] Reference Figure 24 The display device manufacturing apparatus 1000 according to an embodiment may be a laser processing apparatus. The display device manufacturing apparatus 1000 may be used to process the shape of a target object SBJ using a laser beam. For example, as described above, embodiments of the display device manufacturing apparatus 1000 may be used to cut a mother substrate MSUB, apply heat to a structure on the mother substrate MUSB or the mother substrate MSUB, or perform patterning during the manufacturing of the display device 10. In some embodiments, the display device manufacturing apparatus 1000 may be used as the reference above. Figure 15 and Figure 20 The laser device described is LD.

[0250] In an embodiment, the display device manufacturing equipment 1000 may include a platform 1100, a processing laser unit 1200, a flatness sensing unit 1300, a common optical system 1400, and a thickness sensing unit 1500.

[0251] Platform 1100 provides a space or surface on which a target object SBJ can be placed or set. During the manufacturing process of display device 10, the target object SBJ can be set on platform 1100. The target object SBJ may include the mother substrate MSUB of the display device manufacturing method S1 described above.

[0252] The processing laser unit 1200 can generate a processing laser capable of processing the target object SBJ. The processing laser unit 1200 may include a processing laser generator 1210 and a processing laser optical system 1220.

[0253] The processing laser generator 1210 can generate a first laser LSR1. The processing laser generator 1210 may include a light source for generating the first laser LSR1. The processing laser generator 1210 can emit the first laser LSR1 continuously or discontinuously. The wavelength, amplitude, or energy density of the first laser LSR1 can be adjusted by the processing laser generator 1210.

[0254] The first laser, LSR1, can be a processing laser. The processing laser can directly apply energy to the target object SBJ to process the shape of the target object SBJ.

[0255] The processing laser optics system 1220 can be disposed on one side of the processing laser generator 1210. The processing laser optics system 1220 can change the form of the first laser LSR1. In an embodiment, for example, the processing laser optics system 1220 can change the shape, size, or focusing characteristics of the first laser LSR1 to adjust the initial form of the first laser LSR1 to the final processing laser form.

[0256] The processing laser optical system 1220 may include at least one optical element. In an embodiment, for example, the processing laser optical system 1220 may include a beam converter and a scanner.

[0257] In some embodiments, the beam converter of the processing laser optical system 1220 can convert a first laser LSR1 in the form of a Gaussian beam into a Bessel beam. The beam converter may include at least one selected from an axial conical lens and a relay lens. The first laser LSR1 can be converted from a Gaussian beam to a Bessel beam by the axial conical lens, and can be converted into a ring Bessel beam by the relay lens.

[0258] In some embodiments, the scanner in the processing laser optics system 1220 can change the travel direction of the first laser LSR1. In embodiments, for example, the scanner can be a type of galvanometer scanner or current meter scanner. The scanner may have two mirrors with different axes of rotation, but is not limited thereto.

[0259] The flatness sensing unit 1300 can measure the flatness of the platform 1100 and the target object SBJ. The flatness sensing unit 1300 can measure the flatness of the target object SBJ by measuring the distance to the contact surfaces between the target object SBJ and the platform 1100 (i.e., the bottom surface of the target object SBJ and the top surface of the platform 1100). In some embodiments, the flatness sensing unit 1300 may include an autofocus sensor.

[0260] The flatness sensing unit 1300 may include a sensing laser generator 1310, a sensing laser optical system 1320, and a sensing laser sensor 1330.

[0261] The sensing laser generator 1310 can generate a second laser LSR2. The sensing laser generator 1310 may include a light source for generating the second laser LSR2. The sensing laser generator 1310 can emit the second laser LSR2 continuously or discontinuously. The wavelength, amplitude, or energy density of the second laser LSR2 can be adjusted by the sensing laser generator 1310.

[0262] The second laser LSR2 can be the first sensing laser. The first sensing laser can be reflected from the target object SBJ and provides information about the shape of the target object SBJ (e.g., information about flatness) to the sensing laser sensor 1330.

[0263] The sensing laser optics system 1320 can be positioned to one side of the sensing laser generator 1310. The sensing laser optics system 1320 can transform the form of the second laser LSR2. In embodiments, for example, the sensing laser optics system 1320 can change the shape, size, or focusing characteristics of the second laser LSR2 to adjust the initial form of the second laser LSR2 to the final sensing laser form.

[0264] The sensing laser optical system 1320 may include at least one optical element. In an embodiment, for example, the sensing laser optical system 1320 may include a condenser lens.

[0265] In some embodiments, the focusing lens of the sensing laser optical system 1320 can focus the second laser LSR2 onto the target point to be sensed. Accordingly, the sensing accuracy of the flatness sensing unit 1300 can be improved.

[0266] The sensing laser sensor 1330 can receive the second laser LSR2. In an embodiment, for example, the sensing laser sensor 1330 can receive the second laser LSR2 reflected from the target object SBJ. The sensing laser sensor 1330 can collect information about the shape of the target object SBJ from the received second laser LSR2.

[0267] In some embodiments, the wavelength of the first laser LSR1 reaching the target object SBJ may be different from the wavelength of the second laser LSR2 reaching the target object SBJ. In an embodiment, for example, the wavelength of the first laser LSR1 reaching the target object SBJ may be in the range of approximately 950 nm to approximately 1050 nm, while the wavelength of the second laser LSR2 reaching the target object SBJ may be in the range of approximately 800 nm to approximately 900 nm.

[0268] In some embodiments, the pulse energy of the first laser LSR1 reaching the target object SBJ can be greater than the pulse energy of the second laser LSR2 reaching the target object SBJ. For example, in an embodiment, the pulse energy of the first laser LSR1 reaching the target object SBJ can be in the range of approximately 10 μJ to approximately 500 μJ, while the pulse energy of the second laser LSR2 reaching the target object SBJ can be in the range of approximately 10 nanojoules (nJ) to approximately 1 μJ.

[0269] In some embodiments, the pulse width of the first laser LSR1 reaching the target object SBJ can be greater than the pulse width of the second laser LSR2 reaching the target object SBJ. In one embodiment, for example, the pulse width of the first laser LSR1 reaching the target object SBJ can be in the range of approximately 300 fs to approximately 10 ps, ​​and the pulse width of the second laser LSR2 reaching the target object SBJ can be in the range of approximately 50 fs to approximately 500 fs. In another embodiment, the second laser LSR2 can be a continuous wave.

[0270] A common optical system 1400 may be disposed in the optical paths of the first laser LSR1 and the second laser LSR2. The common optical system 1400 can adjust the path and form of each of the first laser LSR1 and the second laser LSR2. In an embodiment, the display device manufacturing apparatus 1000 may include the common optical system 1400 capable of adjusting both the path and form of the first laser LSR1 and the second laser LSR2, thereby improving the sensing accuracy of the flatness sensing unit 1300.

[0271] The common optical system 1400 may include a beam splitter 1410, an objective lens 1420, an objective lens driver 1430, and a beam collector 1440.

[0272] Beam splitter 1410 can be disposed on one side of processing laser optical system 1220 and one side of sensing laser optical system 1320. In embodiments, for example, a first surface 1410a of beam splitter 1410 can be connected to one side of processing laser optical system 1220, and a second surface 1410b of beam splitter 1410 can be connected to one side of sensing laser optical system 1320. In some embodiments, a first laser LSR1 can be incident on the first surface 1410a of beam splitter 1410 in a vertical direction, and a second laser LSR2 can be incident on the second surface 1410b of beam splitter 1410 in a horizontal direction. However, although the incident directions of the first laser LSR1 and the second laser LSR2 can be different from each other, the first laser LSR1 is not limited to being incident in a vertical direction, and the second laser LSR2 is not limited to being incident in a horizontal direction.

[0273] Beam splitter 1410 can partially transmit and partially reflect each of the first laser LSR1 and the second laser LSR2. Beam splitter 1410 may include a prism or a semi-reflective mirror. Beam splitter 1410 can cause the first laser LSR1 and the second laser LSR2, which are incident from different directions, to be emitted in the same direction.

[0274] Objective lens 1420 can be disposed on the side of beam splitter 1410 where the processing laser unit 1200 and flatness sensing unit 1300 are not located. In an embodiment, for example, objective lens 1420 can be attached to the third surface 1410c of beam splitter 1410.

[0275] Both the first laser LSR1 and the second laser LSR2 can pass through the objective lens 1420. The objective lens 1420 can adjust the focal length of the first laser LSR1 emitted from the processing laser optics system 1220 and the second laser LSR2 emitted from the sensing laser optics system 1320, thereby focusing each of the first laser LSR1 and the second laser LSR2 onto the target object SBJ.

[0276] Objective lens 1420 may include at least one lens. In embodiments where objective lens 1420 includes multiple lenses, the multiple lenses may have a single effective focal length and may function as a single virtual lens.

[0277] The objective lens driver 1430 can adjust the relative position of the objective lens 1420 with respect to the platform 1100 (or the target object SBJ). In an embodiment, for example, the objective lens driver 1430 can provide a driving force to the objective lens 1420 to adjust the distance between the objective lens 1420 and the platform 1100 (or the target object SBJ). Accordingly, the focal positions of the first laser LSR1 and the second laser LSR2 formed on the target object SBJ can be adjusted.

[0278] The beam collector 1440 may be disposed on the side of the beam splitter 1410 where the processing laser unit 1200, the flatness sensing unit 1300, and the objective lens 1420 are not located. In an embodiment, for example, the beam collector 1440 may be connected to the fourth surface 1410d of the beam splitter 1410.

[0279] The beam collector 1440 can absorb each of the first laser LSR1 and the second laser LSR2 dispersed from the beam splitter 1410. A portion of the first laser LSR1 and the second laser LSR2 dispersed from the beam splitter 1410 can be moved in a direction other than toward the objective lens 1420. The beam collector 1440 can absorb such unwanted energy from the first laser LSR1 and the second laser LSR2, thereby preventing damage to the display device manufacturing equipment 1000.

[0280] The thickness sensing unit 1500 can measure the thickness of the target object SBJ. The thickness sensing unit 1500 can measure the thickness of the target object SBJ by measuring the distance to the top surface and the distance to the bottom surface of the target object SBJ. The thickness sensing unit 1500 may include a sensing laser generator and a sensing laser sensor, separately from the flatness sensing unit 1300.

[0281] The sensing laser generator of the thickness sensing unit 1500 can generate a third laser LSR3, and the sensing laser sensor of the thickness sensing unit 1500 can receive the third laser LSR3. The third laser LSR3 can be a second sensing laser. The second sensing laser can be reflected from the target object SBJ and provide information about the shape of the target object SBJ (e.g., information about its thickness) to the sensing laser sensor of the thickness sensing unit 1500.

[0282] In some embodiments, the thickness sensing unit 1500 may include a confocal sensor.

[0283] In one embodiment, the display device manufacturing equipment 1000 may include a flatness sensing unit 1300 and a thickness sensing unit 1500, enabling real-time correction or adjustment of the focal length of the processing laser. Accordingly, the mass production quality and yield of the display device 10 manufactured using the display device manufacturing equipment 1000 can be improved.

[0284] In an embodiment, for example, the focal point of the first laser LSR1 can be formed at a specific location in the thickness direction of the target object SBJ. (Refer to the above.) Figure 15 As described above, the laser spot SPOT (see...) can be expected. Figure 15 It is precisely formed at the target location. In some embodiments, the thickness of the target object SBJ can vary at any point in the horizontal direction, and the flatness of the target object SBJ can also vary at any point in the horizontal direction depending on the flatness of the platform 1100.

[0285] According to the embodiment, the display device manufacturing apparatus 1000 can correct the flatness deviation of the target object SBJ in real time through the flatness sensing unit 1300 and the thickness deviation of the target object SBJ through the thickness sensing unit 1500, thereby making the focus of the first laser LSR1 accurately formed at the target position.

[0286] In the following, an embodiment of a process in which the display device manufacturing equipment 1000 senses the thickness deviation and flatness deviation of the target object SBJ in real time and corrects the focal length of the processing laser will be described.

[0287] Figure 25 This is a cross-sectional view illustrating the operating state of the thickness sensing unit according to an embodiment. Figure 26 This is a cross-sectional view illustrating a thickness sensing method of a thickness sensing unit according to an embodiment.

[0288] Reference Figure 25 and Figure 26In this embodiment, the thickness sensing unit 1500 can form the focal point of the third laser LSR3 at each of a first point P1 located on the bottom surface SBJb of the target object SBJ and a second point P2 located on the top surface SBJa of the target object SBJ. The first point P1 and the second point P2 can be two points located on a straight line in the thickness direction of the target object SBJ.

[0289] The thickness sensing unit 1500 can measure the distance D_151 to the first point P1 and the distance D_152 to the second point P2. The thickness sensing unit 1500 can measure the thickness T_SBJ of the target object SBJ by using the difference between the distance D_152 to the second point P2 and the distance D_151 to the first point P1.

[0290] Figure 27 This is a cross-sectional view illustrating the operating state of the flatness sensing unit according to an embodiment. Figure 28 This is a cross-sectional view illustrating the operating state of the processing laser unit according to an embodiment. Figure 29 This is a cross-sectional view illustrating the operating state of the flatness sensing unit and the processing laser unit according to an embodiment. Figure 30 This is a cross-sectional view illustrating the travel paths of the sensing laser of the flatness sensing unit and the processing laser of the processing laser unit according to an embodiment. Figure 31 This is a cross-sectional view illustrating a flatness sensing method of a flatness sensing unit according to an embodiment.

[0291] Apart from Figure 25 and Figure 26 In addition, refer to Figures 27 to 31 In this embodiment, the flatness sensing unit 1300 can form the focal point of the second laser LSR2 at a first point P1 located on the bottom surface SBJb of the target object SBJ. The flatness sensing unit 1300 can measure the distance between the point where the bottom surface SBJb of the target object SBJ and the top surface of the platform 1100 contact each other, so as to measure the flatness of the target object SBJ.

[0292] The sensing laser generator 1310 of the flatness sensing unit 1300 can generate a second laser LSR2. The second laser LSR2 can pass through the sensing laser optical system 1320 of the flatness sensing unit 1300 and the beam splitter 1410 and objective lens 1420 of the common optical system 1400, and is reflected from the target object SBJ. The reflected second laser LSR2 can again pass through the objective lens 1420 and beam splitter 1410 of the common optical system 1400 and the sensing laser optical system 1320 of the flatness sensing unit 1300 to reach the sensing laser sensor 1330.

[0293] The flatness sensing unit 1300 can measure the distance between the flatness sensing unit 1300 and a first point P1 of the target object SBJ. The distance between the flatness sensing unit 1300 and the first point P1 of the target object SBJ can be measured based on the travel distance of the second laser LSR2 (e.g., the distance along the optical path). In an embodiment, for example, the distance between the flatness sensing unit 1300 and the first point P1 of the target object SBJ can be half the travel distance of the second laser LSR2.

[0294] like Figure 28 As shown, the processing laser unit 1200 can form the focal point of the first laser LSR1 at any point in the thickness direction of the target object SBJ. In an embodiment, for example, as shown in the figures, the processing laser unit 1200 can form the focal point of the first laser LSR1 at a first point P1 located on the bottom surface SBJb of the target object SBJ. However, this disclosure is not limited thereto, and as referenced above... Figure 15 Similar to the laser spot SPOT, as described above, the focal point of the first laser LSR1 can be formed at any point in the thickness direction of the target object SBJ for shape control of the target object SBJ (e.g., cutting of the mother substrate MSUB). In the following description, the case where the focal point of the first laser LSR1 is located on the bottom surface SBJb of the target object SBJ will be used as an example.

[0295] The processing laser generator 1210 of the processing laser unit 1200 can generate a first laser LSR1. The first laser LSR1 can pass through the processing laser optical system 1220 of the processing laser unit 1200 and the beam splitter 1410 and objective lens 1420 of the common optical system 1400 to reach the target object SBJ.

[0296] For example, in reference Figure 15 The display device manufacturing method S1 described above (see...) Figure 13 In the process, the first laser LSR1 that reaches the target object SBJ can process the shape of the target object SBJ.

[0297] When processing the shape of the target object SBJ, the focus of the first laser LSR1 can be formed not only at the first point P1 located on the bottom surface SBJb of the target object SBJ, but also at a point between the top surface SBJa and the bottom surface SBJb in the thickness direction of the target object SBJ, and at a point located on the top surface SBJa.

[0298] In an embodiment, before processing the shape of the target object SBJ using the first laser LSR1, the focal length of the first laser LSR1 can be corrected or adjusted in real time by using the thickness of the target object SBJ measured by the thickness sensing unit 1500 and the flatness measured by the flatness sensing unit 1300.

[0299] In an embodiment, for example, the focal length of the first laser LSR1 can be corrected in real time by adding the difference between the thickness of the target object SBJ measured by the thickness sensing unit 1500 and the initial set thickness of the target object SBJ, and the difference between the distance to the bottom surface SBJb of the target object SBJ measured by the flatness sensing unit 1300 and the initial set distance to the bottom surface SBJb of the target object SBJ.

[0300] Already referred to Figure 26 A method for measuring the thickness of a target object SBJ using a thickness sensing unit 1500 is described, and a method for measuring the flatness of the target object SBJ using a flatness sensing unit 1300 will also be described.

[0301] like Figure 31 As shown, the flatness of the target object SBJ can be affected by the flatness of platform 1100. Alternatively, the flatness of the target object SBJ can vary due to the curvature of the target object SBJ itself.

[0302] The flatness sensing unit 1300 can measure the distance between a first measuring point Pa and a second measuring point Pb at different locations on the bottom surface SBJb of the target object SBJ. The first measuring point Pa can serve as a reference point for measuring an initially set distance. The second measuring point Pb can be a target point for real-time correction, which will form the focal point of the first laser LSR1.

[0303] In an embodiment, for example, the flatness sensing unit 1300 can measure the difference H_SBJ between the distance to the first measurement point Pa and the distance to the second measurement point Pb to ensure that the focal point of the first laser LSR1 is formed at the second measurement point Pb. The focal position of the first laser LSR1 can be corrected by the difference H_SBJ between the distance to the first measurement point Pa and the distance to the second measurement point Pb.

[0304] If there is a difference between the thickness of the target object SBJ measured by the thickness sensing unit 1500 and the initial set thickness of the target object SBJ, the focal position of the first laser LSR1 can be corrected by adding the difference between the thickness of the target object SBJ measured by the thickness sensing unit 1500 and the initial set thickness of the target object SBJ to the difference between the distance to the bottom surface SBJb of the target object SBJ measured by the flatness sensing unit 1300 and the initial set distance to the bottom surface SBJb of the target object SBJ.

[0305] In one embodiment, focal length correction of the first laser LSR1 can be performed by the objective lens driver 1430. For example, in another embodiment, the objective lens driver 1430 can adjust the height of the objective lens 1420 to correct the focal length of the first laser LSR1.

[0306] The display device manufacturing apparatus 1000 according to an embodiment can improve sensing accuracy by using a coaxial measurement method. In the embodiment, for example, such as... Figure 29 As shown, the first laser LSR1 generated from the processing laser unit 1200 and the second laser LSR2 generated from the flatness sensing unit 1300 can reach the target object SBJ through the common optical system 1400 along the same optical path.

[0307] Accordingly, the distance D_B between the focal position F1' of the first laser LSR1 and the focal position F1 of the second laser LSR2 can be minimized. In some embodiments, the distance D_B between the focal position F1' of the first laser LSR1 and the focal position F1 of the second laser LSR2 can be less than or equal to approximately 50 μm.

[0308] Furthermore, since both the first laser LSR1 and the second laser LSR2 pass through the common optical system 1400, the focal lengths and other characteristics of the first laser LSR1 and the second laser LSR2 can be adjusted simultaneously by manipulating the beam splitter 1410 or the objective lens 1420 of the common optical system 1400, and the correction error caused by individual adjustment can be minimized.

[0309] In an embodiment, such as Figure 30 As shown, a portion of the first laser LSR1 can be transmitted through the beam splitter 1410 and incident on the objective lens 1420, while a portion of the second laser LSR2 can be reflected by the beam splitter 1410 and incident on the objective lens 1420. In such an embodiment, another portion of the first laser LSR1 can be reflected by the beam splitter 1410 and may not be incident on the objective lens 1420, while another portion of the second laser LSR2 can be transmitted through the beam splitter 1410 and may not be incident on the objective lens 1420.

[0310] Thus, unwanted portions of the first laser LSR1 and the second laser LSR2 incident from the beam splitter 1410 onto the objective lens 1420 can be incident on the beam collector 1440. The beam collector 1440 can absorb the energy of the first laser LSR1 and the second laser LSR2 to prevent damage to the display device manufacturing equipment 1000.

[0311] The following describes an embodiment of a display device manufacturing apparatus 1000 for measuring the thickness and flatness of a target object SBJ and correcting the position of the processing laser.

[0312] First, such as Figure 25 and Figure 26As shown, the thickness of the target object SBJ can be measured by irradiating the top surface SBJa and the bottom surface SBJb of the target object SBJ with a third laser LSR3.

[0313] Next, as Figure 27 As shown, the flatness of the target object SBJ can be measured by irradiating the bottom surface SBJb of the target object SBJ with a second laser LSR2.

[0314] Then, based on the measured thickness and flatness of the target object SBJ, the objective lens driver 1430 can adjust the position of the objective lens 1420, thereby correcting the focal position of the first laser LSR1.

[0315] After that, as Figure 28 As shown, the first laser LSR1 can irradiate the target object SBJ to form a cutting line.

[0316] Although the processes for measuring the flatness of the target object SBJ, correcting the focal position of the first laser LSR1, and forming the cutting line using the first laser LSR1 have been described as being performed sequentially, this disclosure is not limited thereto.

[0317] like Figure 29 and Figure 30 As shown, the process of measuring flatness, the process of correcting the focal position of the first laser LSR1, and the process of forming a cutting line using the first laser LSR1 can be performed simultaneously. Here, simultaneous performance means that each process is performed in the range of a few microseconds (μs) to several hundred microseconds (μs).

[0318] In an embodiment, for example, after the thickness of the target object SBJ is measured by irradiating the third laser LSR3 at a specific point, the second laser LSR2 can track the curvature of the bottom surface SBJb of the target object SBJ in real time at the corresponding point, and based on the real-time tracking information, the objective lens driver 1430 can correct the position of the objective lens 1420 to correct the position of the first laser LSR1, thereby also causing the cutting line of the first laser LSR1 to be corrected in real time.

[0319] By using a coaxial measurement method in which the first laser LSR1 and the second laser LSR2 are incident on the same objective lens 1420 through a beam splitter 1410 of a common optical system 1400, the display device manufacturing apparatus 1000 according to the embodiment can simultaneously perform a cutting process and a height correction of the first laser LSR1 due to the flatness of the target object SBJ. That is, since the focal position F1' of the first laser LSR1 and the focal position F1 of the second laser LSR2 are synchronized through the common optical system 1400, the focal position F1' of the first laser LSR1 can also be adjusted due to this synchronization when the second laser LSR2 tracks the curvature of the bottom surface SBJb of the target object SBJ and adjusts the position of the objective lens 1420 in real time.

[0320] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0321] Although the invention has been specifically shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit or scope of the invention as defined by the claims.

Claims

1. An apparatus for manufacturing a display device, comprising: a stage; a processing laser unit generating a first laser toward the stage; a flatness sensing unit generating a second laser toward the stage; a common optical system disposed in an optical path of the first laser and the second laser; and a thickness sensing unit generating a third laser toward the stage, wherein the common optical system includes an objective lens through which both the first laser and the second laser pass. The common optical system further includes a beam splitter that transmits a portion of each of the first laser and the second laser and reflects another portion of each of the first laser and the second laser, 2. The apparatus of claim 1, wherein, the processing laser unit is disposed on one side of a first surface of the beam splitter, and the flatness sensing unit is disposed on one side of a second surface of the beam splitter different from the first surface of the beam splitter. A direction along which the first laser is incident on the beam splitter is different from a direction along which the second laser is incident on the beam splitter.

3. The apparatus of claim 2, wherein, The objective lens is disposed on one side of a third surface of the beam splitter different from the first surface and the second surface of the beam splitter.

4. The apparatus of claim 2, wherein, The beam splitter causes the first laser and the second laser incident from different directions to be emitted in the same direction.

5. The apparatus of claim 4, wherein, The common optical system further includes a beam collector that absorbs at least a portion of the first laser and the second laser, and 6. The apparatus of claim 5, wherein, the beam collector is disposed on one side of a fourth surface of the beam splitter different from the first surface to the third surface of the beam splitter. The beam splitter includes a prism or a half mirror.

7. The apparatus of claim 2, wherein, The common optical system further includes an objective lens driver that provides a driving force to the objective lens.

8. The apparatus of claim 1, wherein, The objective lens driver moves the objective lens to adjust a focal position of the first laser and the second laser.

9. The apparatus of claim 8, wherein, A separation distance between the focal position of the first laser and the focal position of the second laser is less than or equal to 50 µm.

10. The apparatus of claim 1, wherein, The focal position of the second laser is located on a top surface of the stage.

11. The apparatus of claim 1, wherein, The focal position of the third laser is located on a top surface and a bottom surface of a target object.

12. The apparatus of claim 1, wherein, The flatness sensing unit includes an autofocus sensor.

13. The apparatus of claim 1, wherein, The thickness sensing unit includes a confocal sensor.

14. The apparatus of claim 1, wherein, A wavelength of the first laser is greater than a wavelength of the second laser.

15. The apparatus of claim 1, wherein, 16.A method for manufacturing a display device, the method comprising: measuring a thickness of a mother substrate by irradiating a top surface and a bottom surface of the mother substrate with a first sensing laser; measuring a flatness of the mother substrate by irradiating the bottom surface of the mother substrate with a second sensing laser; correcting a focal position of a processing laser by adjusting a position of an optical system based on the measured thickness and the measured flatness of the mother substrate; and forming a cutting line by irradiating the mother substrate with the processing laser, wherein the measurement of the flatness, the correction of the focal position of the processing laser, and the formation of the cutting line are performed simultaneously. Both the second sensing laser and the processing laser pass through the optical system.

17. The method of claim 16, wherein, ​ 18. The method of claim 16, wherein, The measuring of the flatness and the correcting of the focal position of the processing laser includes tracking the curvature of the bottom surface of the mother substrate in real time by the second sensing laser to adjust the position of the optical system, and The focal position of the processing laser is adjusted together with the position of the optical system.

19. The method of claim 16, wherein, The focal position of the processing laser is synchronized with the focal position of the second sensing laser by the optical system, The position of the optical system is corrected based on the change of the focal position of the second sensing laser, and The focal position of the processing laser is corrected together with the correction of the position of the optical system. 20.An electronic device comprising a display device, wherein, The display device is manufactured by using the apparatus for manufacturing the display device according to any one of claims 1 to 15. The display device is manufactured by using the apparatus for manufacturing the display device according to any one of claims 1 to 15.

Images