Heating disc and semiconductor device processing equipment

Abstract

The invention provides a heating disc and processing equipment of a semiconductor device. The heating disc comprises an edge ring which is located in an edge area of the heating disc and used for supporting a wafer, and the edge ring is covered with a flexible coating and used for buffering acting force between the wafer and the heating disc, so that the damage probability of the circular arc transition position of the edge of the wafer is reduced, and the yield and stability of semiconductor manufacturing are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a heating plate and a semiconductor device processing equipment. Background Technology

[0002] In the field of semiconductor manufacturing technology, intact and undamaged wafer thin films are a core prerequisite for ensuring the accurate implementation of subsequent processes such as photolithography and etching, as well as product yield. Especially in complex processes such as wafer stacking thin films, any tiny film damage can lead to device failure and cause significant production losses.

[0003] In existing thin-film deposition processes, the area near the bottom of the wafer edge arc transition zone is prone to randomly distributed defects of varying sizes. This area happens to be the critical contact point between the wafer and the heating pad. According to statistics from existing process data, the probability of such damage is as high as 16% to 66%, which not only seriously affects the film deposition quality and product yield, but also increases production costs and process control difficulty, becoming a prominent technical bottleneck restricting the improvement of semiconductor manufacturing efficiency. Analysis shows that the core cause of this damage is the direct hard contact between the wafer edge arc and the sealing ring of the heating pad. The impact force and friction generated during the contact process directly lead to film breakage.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a heating plate technology to buffer the force between the wafer and the heating plate, thereby reducing the probability of damage at the arc transition of the wafer edge, so as to improve the yield and stability of semiconductor manufacturing. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] In order to overcome the above-mentioned defects in the prior art, the present invention provides a heating plate and a semiconductor device processing device for buffering the force between the wafer and the heating plate, thereby reducing the probability of damage at the edge arc transition of the wafer and improving the yield and stability of semiconductor manufacturing.

[0007] Specifically, according to a first aspect of the present invention, a heating plate includes: an edge ring located in the edge region of the heating plate for supporting a wafer, wherein the edge ring is covered with a flexible coating.

[0008] Furthermore, in some embodiments of the present invention, the flexible coating is made of silicon nitride-graphite composite material, wherein the mass ratio of silicon nitride to graphite is between 3:1 and 5.6:1, and / or the thickness of the flexible coating is between 0.1 mm and 0.2 mm.

[0009] Furthermore, in some embodiments of the present invention, the edge ring is divided into an inner ring and an outer ring, wherein the height of the outer ring is less than the height of the inner ring, and the diameter of the wafer is greater than the inner diameter of the outer ring and less than the outer diameter of the outer ring.

[0010] Furthermore, in some embodiments of the present invention, the height of the inner ring is greater than the height of the central region of the heating plate, and its width is not less than 4 mm, so as to seal the back side of the wafer.

[0011] Furthermore, in some embodiments of the present invention, the heating plate further includes an adsorption portion located in the central region of the heating plate, for providing an adsorption force to the wafer to press the wafer tightly against the inner ring of the edge ring.

[0012] Furthermore, in some embodiments of the present invention, the heating plate further includes: a limiting portion surrounding the outer periphery of the edge ring, wherein the height of the limiting portion is greater than the height of the edge ring, and the inner surface of the limiting portion is covered with the flexible coating.

[0013] Furthermore, in some embodiments of the present invention, the inner side of the limiting portion has an inwardly extending ramp structure, and / or the upper surface of the limiting portion is covered with the flexible coating.

[0014] Furthermore, in some embodiments of the present invention, the heating plate further includes a wafer lifting mechanism, comprising a driving unit, a pin support plate, and multiple pins, wherein the bottom of the multiple pins is connected to the pin support plate, and the top of the pins passes through multiple pin through holes on the heating plate to contact and support the wafer, and the driving unit adjusts the descent speed of the pin support plate and the multiple pins according to the distance from the wafer to the surface of the heating plate, wherein the descent speed decreases as the distance decreases.

[0015] Furthermore, in some embodiments of the present invention, the ejector pin support plate and the plurality of ejector pins rise at a preset first speed. When the distance between the wafer and the surface of the heating plate is greater than or equal to a preset distance threshold, the ejector pin support plate and the plurality of ejector pins descend at the first speed. When the distance between the wafer and the surface of the heating plate is less than the distance threshold, the ejector pin support plate and the plurality of ejector pins decelerate and descend at a preset acceleration, so that the second speed of the wafer when it descends to the surface of the heating plate is not greater than 0.01 m / s.

[0016] Furthermore, in some embodiments of the present invention, the heating plate further includes: a wafer lifting mechanism, including a driving unit, a pin support plate, and multiple pins, wherein the bottom of the multiple pins is connected to the pin support plate, and their tops pass through multiple pin through holes on the heating plate to contact and support the wafer; the driving unit provides the pin support plate with a driving force for rising and falling; and an electromagnetic buffer mechanism for providing a reverse thrust to the wafer when the distance from the wafer to the surface of the heating plate is less than a preset distance threshold.

[0017] Furthermore, in some embodiments of the present invention, the heating plate further includes: a wafer lifting mechanism, including a driving unit, a pin support plate, and multiple pins, wherein the bottom of the multiple pins is connected to the pin support plate, and their tops pass through multiple pin through holes on the heating plate to contact and support the wafer; the driving unit provides an upward and downward driving force to the pin support plate; and multiple pressure sensors disposed at multiple positions on the heating plate for detecting the actual pressure generated at the corresponding position where the wafer contacts the heating plate, wherein the driving unit locks in response to any of the pressure sensors detecting an actual pressure greater than or equal to a preset pressure threshold.

[0018] Furthermore, in some embodiments of the present invention, the plurality of pressure sensors are embedded at multiple locations on the edge ring.

[0019] Furthermore, the semiconductor device processing apparatus provided according to the second aspect of the present invention includes: a process chamber in which a heating plate as described in any one of the first aspects of the present invention is disposed. Attached Figure Description

[0020] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0021] Figure 1 A schematic diagram of a collision between a wafer and its edges, provided by prior art, is shown.

[0022] Figure 2 A schematic diagram of the edge structure of a heating plate provided according to some embodiments of the present invention is shown.

[0023] Figure 3 A schematic diagram of the edge structure of a heating plate provided according to some embodiments of the present invention is shown.

[0024] Figure 4A A simulation diagram of a collision at the wafer edge provided in the prior art is shown.

[0025] Figure 4B A simulation diagram of a wafer edge collision is shown, provided according to some embodiments of the present invention.

[0026] Figure label: 10 Edge ring 11 Inner Circle 12 Outer ring 20 Adsorption section 30 bumps 40 wafers 50 Limiting section Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0028] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0029] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0030] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0031] As mentioned above, in the field of semiconductor manufacturing technology, intact and undamaged wafer thin films are a core prerequisite for ensuring the accurate implementation of subsequent processes such as photolithography and etching, as well as product yield. Especially in complex processes such as wafer stacked thin films, any tiny film damage can lead to device malfunction and cause significant production losses.

[0032] Please refer to Figure 1 , Figure 1 A schematic diagram of a collision between a wafer and its edges, provided by prior art, is shown.

[0033] like Figure 1 As shown, in existing thin film deposition processes, the area near the bottom of the arc transition zone at the edge of wafer 40 is prone to randomly distributed defects of varying sizes. This area is precisely the critical contact point between wafer 40 and the heating pad. According to statistics from existing process data, the probability of such damage is as high as 16% to 66%, which not only seriously affects the film deposition quality and product yield of wafer 40, but also increases production costs and process control difficulty, becoming a prominent technical bottleneck restricting the improvement of semiconductor manufacturing efficiency. Analysis shows that the core cause of this damage is the direct hard contact between the arc edge of wafer 40 and the sealing ring of the heating pad. The impact force and friction generated during the contact process directly lead to film breakage.

[0034] In order to overcome the above-mentioned defects in the prior art, the present invention provides a heating plate for buffering the force between the wafer 40 and the heating plate, thereby reducing the probability of damage at the edge arc transition of the wafer 40, so as to improve the yield and stability of semiconductor manufacturing.

[0035] In some non-limiting embodiments, the heating plate provided in the first aspect of the present invention can be configured in a semiconductor device processing apparatus provided in the second aspect of the present invention.

[0036] Please refer to the details. Figure 2 , Figure 2 A schematic diagram of the edge structure of a heating plate provided according to some embodiments of the present invention is shown.

[0037] like Figure 2As shown, the heating plate includes an edge ring 10 located at the edge region of the heating plate for supporting the wafer 40. The edge ring 10 is covered with a flexible coating to buffer the pressure between the wafer 40 and the support platform.

[0038] Thus, this application uses a flexible coating structure on the surface of the edge ring 10. Combined with the ability of this flexible coating to maintain good micro-elastic deformation under high-temperature process conditions, it can effectively absorb the impact force generated when the wafer 40 comes into contact with the sealing ring, thereby avoiding the risk of scratches caused by hard contact from the root.

[0039] In some embodiments, the flexible coating employs a silicon nitride-graphite composite material. The mass ratio of silicon nitride to graphite can be between 3:1 and 5.6:1. By adjusting the ratio of the two components, precise control of the coating's elastic deformation capability and structural stability can be achieved at high temperatures not lower than 570°C, thereby preventing wafer scratches while also preventing the coating material from peeling off or cracking.

[0040] In some embodiments, the thickness of the flexible coating can be between 0.1 mm and 0.2 mm. This lower limit ensures the coating's elastic cushioning, structural integrity, and adhesion to the substrate, preventing protective failure, cracking, and peeling due to excessive thinness. This upper limit avoids problems such as increased thermal resistance, internal stress accumulation, and dimensional interference caused by excessive thickness. Therefore, this thickness range fully utilizes the coating's flexible cushioning effect, absorbing contact impacts and preventing scratches, while ensuring uniform heat conduction, thereby improving structural stability under high-temperature processes.

[0041] Here, the flexible coating can have a high temperature resistance of not less than 600°C and a Shore hardness range of 60D to 70D. Even in high-temperature processing environments, the coating can still maintain stable micro-elastic deformation properties, effectively absorbing the contact impact force generated when wafer 40 comes into contact with the support structure, thus fundamentally avoiding surface scratches on wafer 40 caused by hard contact.

[0042] Preferably, the mass ratio of silicon nitride to graphite can be set to 4:1. Here, silicon nitride, as the main component, has good high-temperature resistance, good structural strength, and chemical stability, providing a reliable high-temperature substrate for the coating and avoiding problems such as softening, decomposition, or peeling of the coating at high temperatures. Graphite, as a functional modifying component, endows the coating with good lubricity and micro-elastic deformation potential due to its layered structure. It can neutralize the brittleness of silicon nitride itself, allowing the coating to absorb energy through slight slippage and deformation of its own microstructure when subjected to contact impact from wafer 40, effectively avoiding hard contact scratches. At the same time, under the action of adsorption force, it can achieve flexible adhesion to the back of wafer 40, filling tiny gaps to improve sealing.

[0043] Please refer to Figure 3 , Figure 3 A schematic diagram of the edge structure of a heating plate provided according to some embodiments of the present invention is shown.

[0044] like Figure 3 As shown, the edge ring 10 is divided into an inner ring 11 and an outer ring 12. The height of the outer ring 12 is less than the height of the inner ring 11. The diameter of the wafer 40 is greater than the inner diameter of the outer ring 12 and less than the outer diameter of the outer ring 12, in order to avoid the edge of the wafer 40 colliding with the edge of the heating pad during the process of placing the wafer 40 on the heating pad.

[0045] Here, the edge ring 10 is divided into an inner ring 11 and an outer ring 12 through a stepped design. The inner ring 11 is the core support area of ​​the wafer 40, and its surface is coated with a high-temperature resistant flexible coating to provide stable support and contact buffering for the wafer 40. The outer ring 12 surrounds the outer ring 11 and is machined and milled. Its height is lower than that of the inner ring 11 to form a stepped height difference structure. This height difference creates a clearance space, preventing the edge of the wafer 40 from directly colliding rigidly with the edge of the heating pad body outside the outer ring 12. Therefore, when the wafer 40 is placed on the heating pad, even if there is a slight positional deviation, the annular surrounding structure of the outer ring 12 plays a pre-positioning and guiding role, guiding the wafer 40 to gradually correct its position and finally land smoothly on the support surface of the inner ring 11. This avoids direct friction or impact between the edge of the wafer 40 and the edge of the heating pad, and prevents edge damage from the structural design.

[0046] In some embodiments, the inner diameter of the outer ring 12 can be 298.5 mm, and the diameter of the wafer 40 is typically 300 mm.

[0047] Furthermore, the height of the inner ring 11 is greater than the height of the central area of ​​the heating plate, and its width is not less than 4 mm, for example, 8.5 mm, to seal the back side of the wafer 40. Here, the adsorption force generated by the adsorption part 20 inside the heating plate during operation acts on the wafer 40, and is then conducted to the flexible coating in contact with the wafer 40. Even in a high-temperature process environment, this coating can still undergo controllable adaptive flexible deformation due to its stable micro-elastic deformation properties. This deformation precisely fits the micro-uneven areas on the back side of the wafer 40, fully filling the tiny gaps between the wafer 40 and the support structure, transforming the two from point contact to a close contact state of surface-to-surface bonding. This not only enhances the adhesion of the adsorption force to fix the wafer 40, but also forms a continuous and sealed contact interface, effectively reducing the leakage of reaction gases in processes such as chemical vapor deposition, preventing the intrusion of external impurities or uneven distribution of process gases, ensuring stable gas pressure on the heating plate surface and a pure process environment, thereby further improving the overall process sealing performance of the equipment and providing a reliable guarantee for the uniform film formation and quality stability of the wafer 40 laminated film.

[0048] Furthermore, the heating plate also includes an adsorption section 20. The adsorption section 20 is located in the central region of the heating plate and is used to provide an adsorption force to the wafer 40 to press the wafer 40 tightly against the inner ring 11 of the edge ring 10.

[0049] For example, the adsorption section 20 can be an electrode mesh integrated inside the central region to provide electrostatic adsorption force to the wafer 40.

[0050] For example, the adsorption section 20 can be an air channel. This air channel can be integrated inside the central region, with one end connected to a vacuum pump and the other end connected to the surface of the central region via at least one air hole to provide vacuum adsorption force to the wafer 40.

[0051] In some embodiments, the heating pad further includes a plurality of bumps 30 located in the central region of the heating pad and having a height no greater than the inner ring 11 of the edge ring 10, to adjust the warpage of the wafer 40. Here, the wafer 40 is prone to central depression during high-temperature processing. The bumps 30, positioned in the central region of the heating pad and with a height no greater than the inner ring 11 of the edge ring 10, do not interfere with the primary support and positioning of the wafer 40 by the edge ring 10, while providing distributed auxiliary support for the critical central region of the warped wafer 40. This prevents further stress concentration in the depressed area due to suspension, thereby guiding the wafer 40 back to a flattened shape.

[0052] In some embodiments, the heating plate further includes a limiting portion 50. The limiting portion 50 surrounds the outer periphery of the edge ring 10. The height of the limiting portion 50 is greater than the height of the edge ring 10, and the inner surface of the limiting portion 50 is covered with a flexible coating.

[0053] In some embodiments, the inner side of the limiting portion 50 has an inwardly extending ramp structure and / or the upper surface of the limiting portion 50 is covered with a flexible coating.

[0054] In some embodiments, the heating pad further includes a wafer 40 lifting mechanism. This wafer 40 lifting mechanism includes a drive unit, a pin support plate, and multiple pins. The bottoms of the multiple pins are connected to the pin support plate, while their tops pass through multiple pin through-holes on the heating pad to contact and support the wafer 40. The drive unit adjusts the descent speed of the pin support plate and the multiple pins according to the distance from the wafer 40 to the surface of the heating pad. The descent speed decreases as the distance decreases.

[0055] In some embodiments, the ejector plate and multiple ejector pins rise at a preset first speed. Here, the first speed can be 0.08 m / s. When the distance between the wafer 40 and the surface of the heating pad is greater than or equal to a preset distance threshold, the ejector plate and multiple ejector pins descend at the first speed. When the distance between the wafer 40 and the surface of the heating pad is less than the distance threshold, the ejector plate and multiple ejector pins decelerate and descend at a preset acceleration, so that the second speed of the wafer 40 when it descends to the surface of the heating pad is no greater than 0.01 m / s.

[0056] In some embodiments, the heating pad further includes a wafer 40 lifting mechanism and an electromagnetic buffer mechanism. The wafer 40 lifting mechanism includes a drive unit, a pin support plate, and multiple pins. The bottoms of the multiple pins are connected to the pin support plate, while their tops pass through multiple pin through-holes on the heating pad to contact and support the wafer 40. The drive unit provides an upward and downward driving force to the pin support plate. The electromagnetic buffer mechanism provides a reverse thrust to the wafer 40 when the distance between the wafer 40 and the surface of the heating pad is less than a preset distance threshold, thereby buffering the movement of the heating pad.

[0057] Here, the wafer 40 lifting mechanism works in conjunction with the electromagnetic buffer mechanism, forming a dual protection system that combines speed control and buffering. The lifting mechanism actively slows down just before the wafer 40 contacts the heating plate, reducing its descent inertia. The electromagnetic buffer mechanism can output a reverse micro-push force of 0.05N~0.1N in the 5mm pre-contact buffer section to further offset the impact. Together, they transform hard contact into flexible adhesion, completely avoiding scratches and damage to the wafer 40 edges, while ensuring accurate positioning of the wafer 40 and preventing misalignment and collisions.

[0058] In some embodiments, the heating plate further includes a wafer 40 lifting mechanism and multiple pressure sensors. The wafer 40 lifting mechanism includes a drive unit, a pin support plate, and multiple pins. The bottoms of the multiple pins are connected to the pin support plate, while their tops pass through multiple pin through-holes on the heating plate to contact and support the wafer 40. The drive unit provides an upward and downward driving force to the pin support plate. The multiple pressure sensors are located at multiple positions on the heating plate to detect the actual pressure generated at the corresponding position where the wafer 40 contacts the heating plate. The drive unit locks in response to any pressure sensor detecting an actual pressure greater than or equal to a preset pressure threshold. Then, after the actual pressure returns to below the pressure threshold, the pin support plate continues to descend.

[0059] Here, the wafer 40 lifting mechanism works in conjunction with multiple pressure sensors to form active speed control, using real-time monitoring and dynamic adjustment to counteract impacts. Specifically, when the pressure approaches or exceeds a preset threshold, such as 5 N / cm², the sensors immediately trigger a signal, causing the wafer 40 lifting mechanism to pause its descent until the pressure is balanced before resuming operation. This combination avoids localized pressure concentration caused by inaccurate descent, eliminates hard-contact scratches, and ensures uniform force distribution and precise positioning of the wafer 40, adapting to high-temperature process requirements.

[0060] Furthermore, multiple pressure sensors are embedded in multiple locations on the edge ring 10. Here, these multiple locations can be the inner ring 11 and / or the outer ring 12. The multiple pressure sensors can also be embedded in multiple locations on the upper surface and / or inner side surface of the limiting portion 50.

[0061] Please refer to Figures 4A-4B , Figure 4A A simulation diagram of a collision at the wafer edge provided in the prior art is shown. Figure 4B A simulation diagram of a wafer edge collision is shown, provided according to some embodiments of the present invention.

[0062] like Figures 4A-4B As shown, the damage on the outer side of wafer 40 is mostly point-like and concentrated in the arc-shaped area of ​​the edge. The heating plate in this application, through targeted structural optimizations such as the sealing ring circumferential design and the surface flexible coating, can avoid direct hard contact between the edge of wafer 40 and the receiving groove and sealing ring from the contact source, thereby effectively preventing the formation of this type of scratch.

[0063] Here, the damage morphology in different regions is significantly different. This phenomenon not only confirms the rationality of classifying damage into two different types, but also fully demonstrates the significant beneficial effect of the heating plate's fitting design for the receiving groove and sealing ring in preventing scratches on wafer 40, which can greatly reduce the probability of edge damage on wafer 40.

[0064] In summary, the heating plate and semiconductor device processing equipment provided by the present invention can be used to buffer the force between the wafer 40 and the heating plate, thereby reducing the probability of damage at the edge arc transition of the wafer 40, and improving the yield and stability of semiconductor manufacturing.

[0065] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0066] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating tray, characterized by The edge ring is divided into an inner ring and an outer ring, wherein the height of the outer ring is less than the height of the inner ring, the diameter of the wafer is greater than the inner diameter of the outer ring and less than the outer diameter of the outer ring. The height of the inner ring is greater than the height of the center region of the heating disc, and the width thereof is not less than 4mm, so as to seal the back surface of the wafer.

2. The heating tray of claim 1, wherein, Further comprising: The adsorption part is located in the center region of the heating disc, and is used to provide adsorption force to the wafer, so as to press the wafer against the inner ring of the edge ring.

3. The heating tray of claim 1, wherein, Further comprising:

4. The heating tray of claim 3, wherein, The limiting part is arranged around the outer periphery of the edge ring, wherein the height of the limiting part is greater than the height of the edge ring, and the inner side surface of the limiting part is covered with the flexible coating.

5. The heating tray of claim 4, wherein, The inner side surface of the limiting part has an inwardly extending slope structure, and / or The upper surface of the limiting part is covered with the flexible coating.

6. The heating tray of claim 1, wherein, Further comprising: The wafer lifting mechanism comprises a driving part, a needle support plate and a plurality of needles, wherein the bottom of the plurality of needles is connected to the needle support plate, and the top thereof passes through a plurality of needle through holes on the heating disc to contact and support the wafer, and the driving part adjusts the descending speed of the needle support plate and the plurality of needles according to the distance of the wafer to the surface of the heating disc, wherein the descending speed decreases with the decrease of the distance.

7. The heating tray of claim 6, wherein, The needle support plate and the plurality of needles ascend at a preset first speed, When the distance of the wafer to the surface of the heating disc is greater than or equal to a preset distance threshold, the needle support plate and the plurality of needles descend at the first speed, 8. The heating tray of claim 1, wherein, When the distance of the wafer to the surface of the heating disc is less than the distance threshold, the needle support plate and the plurality of needles decelerate to descend at a preset acceleration, so that the second speed of the wafer when descending to the surface of the heating disc is not greater than 0.01m / s. Further comprising:

9. The heating tray of claim 8, wherein, The wafer lifting mechanism comprises a driving part, a needle support plate and a plurality of needles, wherein the bottom of the plurality of needles is connected to the needle support plate, and the top thereof passes through a plurality of needle through holes on the heating disc to contact and support the wafer, and the driving part provides driving force for the upward and downward movement of the needle support plate; and An electromagnetic buffer mechanism is arranged to provide a reverse thrust to the wafer when the distance of the wafer to the surface of the heating disc is less than a preset distance threshold. Further comprising:

10. The heating tray of claim 1, wherein, The wafer lifting mechanism comprises a driving part, a needle support plate and a plurality of needles, wherein the bottom of the plurality of needles is connected to the needle support plate, and the top thereof passes through a plurality of needle through holes on the heating disc to contact and support the wafer, and the driving part provides driving force for the upward and downward movement of the needle support plate; and ​ ​ ​ 11. The heating tray of claim 1, wherein, ​ ​ a plurality of pressure sensors disposed at a plurality of positions on the heating plate for detecting actual pressures generated by the wafer contacting corresponding positions on the heating plate, wherein the driving portion is locked in response to any of the actual pressures detected by the pressure sensors being greater than or equal to a preset pressure threshold.

12. The heating tray of claim 11, wherein, The plurality of pressure sensors are embedded at a plurality of positions on the edge ring.

13. A processing apparatus of a semiconductor device, characterized by comprising: Comprising: A process chamber, wherein the heating plate as claimed in any one of claims 1-12 is configured.

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