Integrated testing device and method for photoelectric characteristics of three-dimensional film

Abstract

The invention relates to an integrated testing device and method for photoelectric characteristics of a three-dimensional film. The integrated testing device comprises a base, a three-dimensional motion system, a dual-function testing probe, a double-layer sample objective table and a control system, the three-dimensional motion system comprises two Y-axis linear modules fixed to the base in parallel, a Z-axis cross beam erected on sliding blocks of the two Y-axis linear modules, an X-axis linear module erected on the Z-axis cross beam and a main sliding block capable of moving along the Z-axis cross beam and the X-axis linear module. The dual-function test probe is fixed on the main slide block and comprises a front adapter plate and a rear adapter plate. The invention not only solves the defects of low test efficiency, high cost and incapability of obtaining in-situ associated data caused by separation of film optical and electrical test equipment, but also provides a film photoelectric characteristic integrated test device which is compact in structure, accurate in positioning and integrated in function.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of material performance testing, in particular to a three-dimensional thin film photoelectric property integrated testing device and method. BACKGROUND

[0002] Thin film materials, such as transparent conductive oxides (ITO, AZO), metal mesh, nano silver wire, and various functional polymer thin films, are key basic materials in modern optoelectronic industry. The core performance indicators, especially the optical transmittance and surface sheet resistance (or conductivity), directly determine their performance and application prospects in touch screens, flexible displays, organic photovoltaic cells, and smart windows. Therefore, it is crucial to measure these two parameters quickly and accurately in research and production quality control.

[0003] Currently, the industry generally relies on professional equipment with single function to measure the optical transmittance and surface sheet resistance of thin films. That is, a spectrophotometer or a dedicated transmittance tester is used to measure the optical performance, while a four-probe tester or a contact surface resistance meter is used to measure the electrical performance. This traditional mode of "separate testing and separate data" has the following inherent disadvantages and limitations: First, the cost of equipment and space occupation is high. Research institutions or production enterprises need to purchase two or more precision instruments, which not only increases the cost but also occupies valuable laboratory or workshop space.

[0004] Second, the testing efficiency is low and the operation is complicated. To fully characterize the same sample, it needs to be repeatedly clamped, positioned, and tested between different devices. This process not only consumes time and effort, but also greatly limits the efficiency of large-scale sample screening or process optimization.

[0005] Third, and most importantly, it cannot achieve "in-situ correlation measurement". When the sample is transferred between different devices, it cannot be ensured that the two measurements are of the same microscopic area of the sample. Functional thin films, especially during the preparation process, often have thickness, composition, or crystalline uniformity problems at the microscopic scale. The data measured by traditional methods are "average values" or "mixed values" of different points, and cannot establish a one-to-one correlation between the optical and electrical properties of the same detection point. This is like using two different rulers to measure the length and width of an irregular object, but cannot know the aspect ratio of a specific point, which fundamentally hinders the understanding of the structure-activity relationship of materials and the accurate diagnosis of process defects.

[0006] Therefore, there is an urgent need for a comprehensive testing device that can integrate optical and electrical testing functions and perform in-situ, rapid, and sequential measurements on the same microscopic area without moving the sample, to fundamentally solve the above problems and promote the progress of new material research and quality control. SUMMARY

[0007] In view of the above problems, the present application provides a three-dimensional thin film photoelectric property integrated testing device and method, which not only solves the defects of low testing efficiency, high cost and inability to obtain in-situ related data caused by the separation of thin film optical and electrical testing equipment, but also provides a thin film photoelectric property integrated testing device with compact structure, accurate positioning and integrated functions.

[0008] In order to achieve the above-mentioned and other related purposes, the technical solutions provided by the present application are as follows: A three-dimensional thin film photoelectric property integrated testing device, comprising a base, a three-dimensional motion system, a dual-function testing probe, a double-layer sample carrier and a control system; The three-dimensional motion system comprises two parallel Y-axis linear modules fixed on the base, a Z-axis cross beam arranged above the sliding blocks of the two Y-axis linear modules, an X-axis linear module arranged on the Z-axis cross beam, and a main sliding block movable along the Z-axis cross beam and the X-axis linear module; The dual-function testing probe is fixed on the main sliding block and comprises a front adapter plate and a rear adapter plate; four probes are vertically installed at the lower end of the front adapter plate; and a micro collimated light source is vertically installed at the lower end of the rear adapter plate; The double-layer sample carrier is located below the three-dimensional motion system and comprises an upper sample fixing table and a lower optical sensing table; the upper sample fixing table is provided with a clamping mechanism for flattening the thin film; and the lower optical sensing table is fixedly installed with a photoelectric sensor facing the region of the upper sample fixing table; The control system is electrically connected with the Y-axis linear module, the Z-axis cross beam, the four probes, the micro collimated light source and the photoelectric sensor, respectively.

[0009] Further, the control system is configured to perform the following operations: controlling the movement of the main sliding block to align the micro collimated light source with the center of the photoelectric sensor; recording the reading of the photoelectric sensor as the initial light intensity I0 when there is no sample, recording the transmitted light intensity I1 when the thin film sample is placed on the upper sample fixing table, and calculating the transmittance; controlling the movement of the main sliding block to position the four probes above the sample to be tested and control them to descend and contact the sample, measuring the voltage and current through the source measurement unit, and calculating the square resistance.

[0010] Further, the clamping mechanism is a spiral side clamp.

[0011] Further, the micro collimated light source is a LED collimated light source of a specific wavelength.

[0012] Further, the photoelectric sensor is a silicon photodiode.

[0013] Further, the four probes are connected with the front adapter plate through a buffering mechanism.

[0014] Further, the upper sample fixing table is made of optical glass.

[0015] Further, the Y-axis linear module, the X-axis linear module and the Z-axis crossbeam are high-precision ball screw linear modules.

[0016] In order to achieve the above-mentioned purpose and other related purposes, the application further provides a three-dimensional thin film photoelectric property integrated testing method applied to the three-dimensional thin film photoelectric property integrated testing device. S1. The control system drives the main sliding block to move, so that the light spot of the micro-collimating light source is accurately aligned with the center of the lower photoelectric sensor; S2. In the case where no sample is placed, the photoelectric sensor reading is recorded as the initial light intensity I0; S3. After the thin film sample is fixed on the upper sample fixing table, the transmitted light intensity I1 is measured again at the same position; S4. The system automatically calculates and displays the optical transmittance T=(I1 / I0)×100% of the current test point; S5. On the premise that the optical transmittance test is completed and the sample is not moved, the control system continues to drive the main sliding block to position the four-probe assembly to the same coordinate point of the aforementioned optical test; S6. The four probes are controlled to descend and stably contact the sample surface; S7. The source measurement unit inputs a known current I to a pair of probes, and measures the voltage drop V generated from another pair of probes; S8. The system automatically calculates and displays the sheet resistance of the point according to the four-probe method formula.

[0017] The application has the following positive effects: 1. The function of the application is highly integrated and cost-saving: two independent test functions are integrated into one, which significantly reduces the equipment purchase cost and laboratory space occupation of users.

[0018] 2. The test efficiency and data quality of the application are improved: the automatic process avoids manual station changing operation, and the test speed is greatly improved. More importantly, the "in-situ correlation measurement" in the true sense is realized, and the obtained optical and electrical data are derived from the same sample point, which provides extremely valuable and accurate "structure-performance" relationship data for material science research, and can accurately evaluate the uniformity of the thin film and diagnose process defects.

[0019] 3. The strong expansion capability of the present application: the platform can be further programmed to realize the automatic surface scanning mapping of the sample, quickly generate the "transmittance distribution cloud map" and "sheet resistance distribution cloud map" of the thin film, and provide intuitive and comprehensive data support for macro performance evaluation and process optimization. This is a function that discrete devices cannot achieve. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 is a schematic diagram of the three-dimensional structure of the present application; Figure 2 is a schematic diagram of the top view structure of the present application; Figure 3 is a schematic diagram of the working state of the bifunctional test probe and double-layer sample stage of the present application; Figure 4 is a schematic diagram of the working process of the present application.

[0021] Explanation of figure numbers: 001 - base, 002 - Y-axis linear module, 003 - Z-axis crossbeam, 004 - main slider, 005 - front adapter plate, 006 - four probes, 007 - rear adapter plate, 008 - micro collimating light source, 009 - upper sample fixing table, 010 - clamping mechanism, 101 - lower optical sensing table, 102 - photoelectric sensor, 103 - X-axis linear module. DETAILED DESCRIPTION

[0022] Exemplary embodiments of the present disclosure are described below with reference to the accompanying drawings, which include various details of the embodiments of the present disclosure to assist in understanding, which should be considered only as exemplary. Therefore, those of ordinary skill in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Also, in order to be clear and concise, descriptions of well-known functions and structures are omitted in the following description.

[0023] Example 1: as shown in Figure 1 or Figure 2 or Figure 3 A three-dimensional thin film photoelectric property integrated testing device, characterized in that it comprises a base 001, a three-dimensional motion system, a bifunctional test probe, a double-layer sample stage, and a control system. The three-dimensional motion system comprises two parallel Y-axis linear modules 002 fixed on the base 001, a Z-axis crossbeam 003 erected on the sliders of the two Y-axis linear modules 002, an X-axis linear module erected on the Z-axis crossbeam, and a main slider 004 movable along the Z-axis crossbeam 003 and the X-axis linear module 103. The double-function test probe is fixed on the main slider 004, comprising a front adapter plate 005 and a rear adapter plate 007; the lower end of the front adapter plate 005 is vertically installed with four probes 006; the lower end of the rear adapter plate 007 is vertically installed with a miniature collimating light source 008; The double-layer sample carrier is located below the three-dimensional motion system, comprising an upper sample fixing table 009 and a lower optical sensing table 101; the upper sample fixing table 009 is provided with a clamping mechanism 010 for flattening the film; the lower optical sensing table 101 is fixedly installed with a photoelectric sensor 102 opposite the area of the upper sample fixing table 009; The control system is electrically connected with the Y-axis linear module 002, the Z-axis cross beam 003, the four probes 006, the miniature collimating light source 008 and the photoelectric sensor 102 respectively.

[0024] In this embodiment, the control system is configured to perform the following operations: controlling the movement of the main slider (004) to make the miniature collimating light source 008 and the photoelectric sensor 102 center aligned; recording the reading of the photoelectric sensor 102 as the initial light intensity I0 when there is no sample, recording the transmitted light intensity I1 when the film sample is placed on the upper sample fixing table 009, and calculating the transmittance; controlling the movement of the main slider 004 to make the four probes 006 positioned above the sample to be tested and controlled to contact the sample, measuring the voltage and current through the source measurement unit, and calculating the square resistance.

[0025] In this embodiment, the clamping mechanism 010 is a spiral side clamp.

[0026] In this embodiment, the miniature collimating light source 008 is a LED collimating light source of a specific wavelength.

[0027] In this embodiment, the photoelectric sensor 102 is a silicon photodiode.

[0028] In this embodiment, the four probes 006 are connected with the front adapter plate 005 through a buffer mechanism.

[0029] In this embodiment, the upper sample fixing table 009 is made of optical glass.

[0030] In this embodiment, the Y-axis linear module 002, the X-axis linear module 103 and the Z-axis cross beam 003 are all high-precision ball screw linear modules.

[0031] In this embodiment, as shown in Figure 4 The present application provides a three-dimensional thin film photoelectric property integrated test method, which is applied to the three-dimensional thin film photoelectric property integrated test device, and the method comprises the following steps: S1. The control system drives the main slide to move, so that the light spot of the micro-collimating light source is accurately aligned with the center of the lower photoelectric sensor; S2. The photoelectric sensor reading is recorded as the initial light intensity I0 without placing a sample; S3. After fixing the thin film sample on the upper sample fixing table, the transmitted light intensity I1 is measured again at the same position; S4. The system automatically calculates and displays the optical transmittance T = (I1 / I0) x 100% of the current test point; S5. After completing the optical transmittance test without moving the sample, the control system continues to drive the main slide to position the four-probe assembly to the same coordinate point of the aforementioned optical test; S6. The four probes are controlled to stably contact the sample surface; S7. The source measurement unit inputs a known current I to a pair of probes, and measures the voltage drop V generated from another pair of probes; S8. The system automatically calculates and displays the sheet resistance of the point according to the four-probe method formula.

[0032] Example 2: Based on the three-dimensional thin film optical property integrated test device and method of Example 1, the present application is further described and explained as follows.

[0033] As shown in Figures 1 to 3 , the present embodiment provides a three-dimensional thin film photoelectric property integrated test device. The device comprises a base 001 as a basic support. Two sets of Y-axis linear modules 002 are fixedly installed in parallel on the base 001. A Z-axis cross beam 003 is fixed at both ends of the Y-axis linear module 002 through the sliding blocks, so that it can move synchronously along the Y direction with the sliding blocks. The Z-axis cross beam 003 itself is also a linear module, and a main sliding block 004 can move in the Z direction (forward and backward) along it. Through cooperation with the X-axis linear module, high-precision positioning of the main sliding block 004 in the horizontal and vertical planes is realized.

[0034] The front and rear ends of the main sliding block 004 are respectively fixed with a front adapter plate 005 and a rear adapter plate 007. The lower end of the front adapter plate 005 is installed with a set of four probes 006 through a buffer mechanism (such as a micro spring), so as to ensure that the pressure is constant when the probes contact the sample, and to avoid damaging the sample. The lower end of the rear adapter plate 007 is vertically installed with a micro-collimating light source 008, which is preferably a 650nm wavelength LED collimating light source in the present embodiment.

[0035] Below the motion system, a double-layer sample stage is arranged. The upper layer is a sample fixing stage 009, which is provided with a plurality of spiral side clamps 010 for fixing the film sample flatly. The lower layer is an optical sensing stage 101, which is fixed on the base 001 through a support, and is integrated with a high-sensitivity silicon photodiode as a photoelectric sensor 102, with the center of the photosensitive surface directly facing the test area of the upper sample fixing stage 009.

[0036] The device further comprises a control system integrated with a motion control card, a source measurement unit and a data acquisition card. In operation, the user sets the test procedure through computer software. The control system first drives the main slider 004 to move, so that the center of the light spot of the micro-collimating light source 008 is accurately aligned with the center of the photoelectric sensor 102. The light intensity I0 is measured without the sample, and the light intensity I1 is measured after the film sample is placed and clamped. The software automatically calculates and displays the transmittance. Subsequently, the control system moves the main slider 004 to position the four probes 006 at the optical test point, controls the four probes 006 to descend and contact the sample, and performs the sheet resistance measurement. All data are automatically recorded, stored, and a uniformity mapping diagram can be generated.

[0037] In summary, the present application not only solves the defects of low test efficiency, high cost and inability to obtain in-situ related data caused by the separation of film optical and electrical test equipment, but also provides a film photoelectric property integrated test device with compact structure, accurate positioning and integrated functions.

[0038] The above specific embodiments do not constitute a limitation on the protection scope of the present disclosure. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A three-dimensional thin-film optoelectronic property integrated testing device, characterized in that, The application relates to a three-dimensional motion system for testing the electrical properties of a sample, comprising a base (001), a three-dimensional motion system, a double-function test probe, a double-layer sample carrier and a control system. The three-dimensional motion system comprises two parallel Y-axis linear modules (002) fixed on the base (001), a Z-axis crossbeam (003) arranged on the sliders of the two Y-axis linear modules (002), an X-axis linear module arranged on the Z-axis crossbeam, and a main slider (004) capable of moving along the Z-axis crossbeam (003) and the X-axis linear module (103). The double-function test probe is fixed on the main slider (004) and comprises a front adapter plate (005) and a rear adapter plate (007); the lower end of the front adapter plate (005) is vertically provided with four probes (006); and the lower end of the rear adapter plate (007) is vertically provided with a micro collimated light source (008). The double-layer sample carrier is located below the three-dimensional motion system and comprises an upper sample fixing table (009) and a lower optical sensor table (101); the upper sample fixing table (009) is provided with a clamping mechanism (010) for flattening a film; and the lower optical sensor table (101) is fixedly provided with a photosensor (102) opposite the area of the upper sample fixing table (009). The control system is electrically connected with the Y-axis linear module (002), the Z-axis crossbeam (003), the four probes (006), the micro collimated light source (008) and the photosensor (102) respectively.

2. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The control system is configured to control the movement of the main slider (004), so that the micro collimated light source (008) is aligned with the center of the photosensor (102); record the reading of the photosensor (102) as an initial light intensity I0 when there is no sample; record the transmitted light intensity I1 when a film sample is placed on the upper sample fixing table (009) and calculate the transmittance; control the movement of the main slider (004), so that the four probes (006) are positioned above the sample to be measured and are controlled to contact the sample, the voltage and current are measured by a source measurement unit, and the square resistance is calculated.

3. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The clamping mechanism (010) is a spiral side clamp.

4. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The micro collimated light source (008) is an LED collimated light source with a specific wavelength.

5. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The photosensor (102) is a silicon photodiode.

6. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The four probes (006) are connected with the front adapter plate (005) through a buffer mechanism.

7. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The upper sample fixing table (009) is made of optical glass.

8. The three-dimensional thin film photoelectric property integrated test device according to claim 1, wherein: The Y-axis linear module (002), the X-axis linear module (103) and the Z-axis crossbeam (003) are high-precision ball screw linear modules.

9. A method for testing photoelectric properties of a three-dimensional thin film, applied to the device for testing photoelectric properties of a three-dimensional thin film according to any one of claims 1-8, characterized in that, The method comprises the following steps: S1. The control system drives the main slider to move, so that the light spot of the micro collimated light source is accurately aligned with the center of the lower photosensor; S2. When there is no sample, the reading of the photosensor is recorded as an initial light intensity I0; S3. After a film sample is fixed on the upper sample fixing table, the transmitted light intensity I1 is measured again at the same position. S4. The system automatically calculates and displays the optical transmittance T = (I1 / I0) x 100% of the current test point; S5. After the optical transmittance test is completed without moving the sample, the control system continues to drive the main slider to position the four-probe assembly to the same coordinate point of the aforementioned optical test; S6. The control system lowers the four probes to make stable contact with the sample surface; S7. The source measurement unit inputs a known current I to one pair of probes while measuring the voltage drop V generated from the other pair of probes; S8. The system automatically calculates and displays the sheet resistance of the point according to the four-probe method formula.

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