Plasma processing equipment and use method thereof

Abstract

The invention provides plasma processing equipment. The plasma processing equipment comprises a reaction cavity, a plasma confinement ring and a moving ring, a base for bearing a wafer is arranged in the reaction cavity; the plasma confinement ring is arranged between the base and the side wall of the reaction cavity, and is provided with a plurality of first air channels penetrating through the thickness of the plasma confinement ring; a first space is defined by the lower surface of the plasma confinement ring and the reaction cavity, the first air channel is communicated with the first space, and the first space is provided with a first extraction opening; the moving ring is arranged above the plasma confinement ring and the base, a plurality of second air channels penetrating through the thickness of the moving ring are formed in the moving ring, a second space is defined by the upper surface of the moving ring and the reaction cavity, and a second extraction opening is formed in the second space. According to the plasma processing equipment and the use method, the first air channel is arranged on the plasma confinement ring, the second air channel is arranged on the moving ring, and air is pumped through the first air channel and the second air channel, so that the air pumping speed is increased, and the edge deviation effect of air pumping can be reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a plasma processing device and its method of use. Background Technology

[0002] In semiconductor manufacturing, wafers are typically placed in a vacuum chamber for etching or other processes. Within the chamber structure, a base supports the wafer, and above the base are a spray head and a radio frequency (RF) feed assembly. The RF feed assembly works in conjunction with the spray head to generate plasma above the wafer. A vacuum pump is located on one side of the bottom of the chamber. To confine the plasma above the base, a plasma confinement ring surrounds the base. A vertically penetrating vacuum slit is formed on the plasma confinement ring. When the vacuum pump is pumping, it evacuates the area above the wafer within the chamber through the vacuum slit on the plasma confinement ring. The aspect ratio of the vacuum slit is set relatively large to maximize the pressure uniformity above the plasma confinement ring. However, a large aspect ratio can lead to excessive air resistance, reducing the pumping speed. Conversely, adjusting the aspect ratio of the vacuum slit to increase the pumping speed would increase the pressure non-uniformity above the plasma confinement ring.

[0003] Therefore, a plasma processing device is needed that can both quickly extract air and maintain uniform air pressure throughout the cavity. Summary of the Invention

[0004] The purpose of this invention is to provide a plasma processing device and method of use, so as to improve the pumping speed and improve the uniformity of gas pressure throughout the cavity.

[0005] To achieve the above objectives, the present invention provides a plasma processing apparatus comprising:

[0006] The reaction chamber contains a base for supporting the wafer;

[0007] A plasma confinement ring is disposed between the base and the side wall of the reaction chamber. The plasma confinement ring has multiple first air channels that penetrate its thickness. The lower surface of the plasma confinement ring and the reaction chamber form a first space. The first air channels are connected to the first space. The first space has a first air extraction port.

[0008] A movable ring is disposed above the plasma confinement ring and the base. The movable ring has multiple second air channels that penetrate its thickness. The upper surface of the movable ring and the reaction chamber form a second space, and the second space has a second air extraction port.

[0009] The base has a center line perpendicular to its surface, and the first air extraction port and the second air extraction port are respectively disposed on both sides of the center line.

[0010] Optionally, the side wall of the reaction chamber is provided with a transfer port, the transfer port has a transfer center, the intersection of the center line and the base is the base center, and the line connecting the base center and the transfer center forms a first line; the second exhaust port has an exhaust port center, the line connecting the base center and the exhaust port center is a second line, and the angle between the first line and the second line is less than 30°.

[0011] Optionally, the area enclosed by the moving ring, the plasma confinement ring, and the base is a plasma environment, the surface of the moving ring facing the plasma environment is an arc-shaped surface, and the height of the edge region of the moving ring is lower than the height of the central region of the moving ring.

[0012] Optionally, the upper surface of the plasma confinement ring is lower than the upper surface of the base.

[0013] Optionally, the upper surface of the plasma confinement ring is lower than the lower surface of the base.

[0014] Optionally, the first airway includes a plurality of first ventilation slots, the first ventilation slots being annular; and the plurality of first ventilation slots are concentrically arranged.

[0015] Optionally, the first airway includes a plurality of first air holes, which are arranged in a ring, and multiple rings of first air holes are provided along the radial direction of the plasma confinement ring.

[0016] Optionally, the second airway includes a plurality of second ventilation slots, the second ventilation slots being annular; and the plurality of second ventilation slots are concentrically arranged.

[0017] Optionally, the second airway includes a plurality of second air holes, which are arranged in a ring, and multiple rings of second air holes are provided along the radial direction of the moving ring.

[0018] Optionally, the first air extraction port is connected to a first air extraction pump, and the second air extraction port is connected to a second air extraction pump, wherein the maximum air extraction power of the first air extraction port is greater than the maximum air extraction power of the second air extraction port.

[0019] Optionally, the first pump may include a molecular pump or a dry pump; the second pump may include a molecular pump or a dry pump.

[0020] Optionally, the first air extraction port and the second air extraction port are respectively connected to the same air pump.

[0021] Optionally, it also includes a spray head, which is disposed inside the reaction chamber and located above the base and opposite to the base, with the movable ring surrounding the periphery of the spray head.

[0022] Optionally, the side wall of the reaction chamber is provided with a transfer port, and the plasma processing equipment further includes a lifting assembly. The lifting assembly is connected to the moving ring to drive the moving ring to move up and down in the reaction chamber. When in the process state, the moving ring descends and closes the transfer port. The upper surface of the moving ring and the inner wall of the upper half of the reaction chamber form the second space.

[0023] The present invention also provides a method of using a plasma processing device, the method being used in the plasma processing device as described above, the method comprising:

[0024] Gas is extracted from the reaction chamber through the first extraction port and gas is extracted from the reaction chamber through the second extraction port.

[0025] Optionally, the base has a centerline perpendicular to its surface, and the first and second air extraction ports are respectively located on both sides of the centerline. During the air extraction process, the first and second air extraction pumps measure the gas pressure in the reaction region of the reaction chamber near the plasma confinement ring and the moving ring, respectively. Based on the gas pressure measurement results near the plasma confinement ring and the moving ring, the pumping power of the first air extraction pump relative to the second air extraction pump is adjusted to improve the gas pressure uniformity of the reaction gas at different positions in the reaction chamber.

[0026] Optionally, when the measured air pressure in the reaction chamber near the first pump is higher than the air pressure near the second pump, the ratio of the pumping power of the second pump and the first pump is relatively reduced; when the measured air pressure in the reaction chamber near the first pump is lower than the air pressure near the second pump, the ratio of the pumping power of the second pump and the first pump is relatively increased.

[0027] Compared with the prior art, the technical solution provided by the present invention has at least the following beneficial effects:

[0028] In the plasma processing device of the present invention, by setting a first gas channel on the plasma confinement ring and a second gas channel on the moving ring, and simultaneously drawing gas through the first and second gas channels, the gas extraction speed is improved. In addition, the depth-to-width ratio of the first gas channel is small, and when the first gas extraction port draws gas, the gas pressure near the first gas extraction port is lower than the gas pressure far from the first gas extraction port. By setting the second gas channel on the moving ring and setting the second gas extraction port at a relative position to the first gas extraction port, the gas extraction effect of the second gas extraction port can compensate for the gas pressure deviation caused by the gas extraction of the first gas extraction port. By drawing gas through the first and second gas extraction ports simultaneously, it is possible to achieve rapid gas extraction even with the small depth-to-width ratio of the first gas channel, while ensuring the uniformity of gas pressure throughout the reaction chamber. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the structure of a plasma device.

[0030] Figure 2 This is a schematic diagram of another type of plasma device.

[0031] Figure 3 This is a vertical cross-sectional view of the plasma device structure of the present invention.

[0032] Figure 4 This is a schematic diagram showing the relative positions of the base, the plate inlet, the first exhaust port, and the second exhaust port in the plasma device of the present invention, viewed from above.

[0033] Figure 5 This is a schematic diagram of an embodiment where the first gas channel in the plasma processing device of the present invention is a ventilation slot.

[0034] Figure 6 This is a schematic diagram of an embodiment where the first air passage in the plasma processing device of the present invention is an air hole.

[0035] Figure 7 This is a flowchart of the method of using the plasma processing equipment of the present invention.

[0036] Explanation of reference numerals in the attached figures:

[0037] Plasma processing equipment 10

[0038] Reaction chamber 110

[0039] Plasma confinement ring 120

[0040] First airway 130

[0041] First Space 140

[0042] First exhaust port 150

[0043] Base 160

[0044] Transmitter 170

[0045] Moving ring 180

[0046] 190 spray heads

[0047] Plasma processing equipment 20

[0048] Reaction chamber 210

[0049] Plasma confinement ring 220

[0050] First airway 221

[0051] First ventilation slot 2211

[0052] First pore 2212

[0053] First Space 230

[0054] First exhaust port 240

[0055] Moving ring 250

[0056] Second airway 251

[0057] Base 260

[0058] Transmitter 270

[0059] Second exhaust port 280

[0060] 290 spray heads

[0061] Second Space 300 Detailed Implementation

[0062] The following will be combined with the appendix in the embodiments of the present invention. Figure 1 ~Attached Figure 7 The technical solutions, structural features, objectives and effects achieved in the embodiments of the present invention will be described in detail.

[0063] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to facilitate and clarify the purpose of illustrating the embodiments of the present invention, and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationship, or adjustments to the size should still fall within the scope of the technical content disclosed in the present invention, provided that they do not affect the effects and objectives that the present invention can produce.

[0064] It should be noted that, in this invention, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only the expressly listed elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0065] like Figure 1 As shown, a base 160 for supporting wafers and a spray head 190 are provided in the reaction chamber 110 of the plasma processing equipment 10. The spray head 190 is used to supply reaction gas into the reaction chamber 110. A wafer transfer port 170 is opened on the side wall of the reaction chamber 110, which is the channel for wafers to enter and exit the reaction chamber 110. A plasma confinement ring 120 is arranged circumferentially along the base 160. A movable ring 180 is arranged opposite to the plasma confinement ring 120 above it. The movable ring 180 can move up and down in the vertical direction to expose or block the wafer transfer port 170. The space enclosed by the plasma confinement ring 120, the base 160, the spray head 190, and the movable ring 180 is the reaction area. The lower surface of the plasma confinement ring 120 and the reaction chamber 110 enclose a first space 140. The bottom of the reaction chamber 110 is provided with a first exhaust port 150 that is connected to the first space 140. A first air passage 130 is provided on the plasma confinement ring 120, and the first air passage 130 connects the reaction area and the first space 140.

[0066] When gas is extracted from the reaction area through the first extraction port 150 and the first gas channel 130, in order to ensure uniform plasma pressure at all points above the wafer, the first gas channel 130 of the plasma confinement ring 120 needs to maintain a large gas resistance. In some process technologies that require high-speed extraction, excessive gas resistance can lead to poor extraction. Figure 1The arrows shown indicate the direction of gas flow when gas is drawn through the first extraction port 150. The thickness of the arrows indicates the magnitude of the extraction rate. Above the plasma confinement ring 120, the arrow pointing to the first air passage 130 is thinner, indicating that the extraction rate of gas flowing along the circumference of the reaction chamber 110 towards the plasma confinement ring 120 is smaller, the first air passage 130 has greater resistance to the flowing gas, and the gas pressure is more uniform at various points above the plasma confinement ring 120. Below the plasma confinement ring 120, the arrows near the first extraction port 150 are thicker than those far from the first extraction port 150, indicating that the extraction rate near the first extraction port 150 is greater than that far from the first extraction port 150. Along the circumference of the reaction chamber 110, under the suction action of the pump outside the first extraction port 150, the gas pressure is lowest near the first extraction port 150 and gradually increases from near the first extraction port 150 to far from the first extraction port 150.

[0067] If the aspect ratio of the first air passage 130 of the plasma confinement ring 120 is reduced to decrease the air resistance, such as... Figure 2 As shown, increasing the pumping speed can lead to uneven plasma pressure in the area above the wafer, affecting the uniformity of the wafer processing results.

[0068] To address the aforementioned difficulties in simultaneously achieving rapid air extraction and uniform air pressure throughout the system, this invention provides the following plasma processing equipment:

[0069] like Figure 3 The plasma processing apparatus 20 of the present invention, as shown, includes a reaction chamber 210, a plasma confinement ring 220, and a moving ring 250. The sidewall of the reaction chamber 210 is provided with a wafer transfer port 270, and a base 260 for supporting wafers is provided inside the chamber. Wafers enter and exit the reaction chamber 210 through the wafer transfer port 270. The plasma confinement ring 220 is located between the base 260 and the sidewall of the reaction chamber 210, and multiple first air channels 221 penetrating its thickness are formed on the plasma confinement ring 220. The moving ring 250 is located above the plasma confinement ring 220 and the base 260. The area enclosed by the plasma confinement ring 220, the base 260, the moving ring 250, and the spray head 290 is the reaction region. The lower surface of the plasma confinement ring 220 and the reaction chamber 210 form a first space 230. The two ends of the first air channels 221 are respectively connected to the reaction region and the first space 230. The first space 230 has a first exhaust port 240, through which the gas reacted in the reaction area is extracted.

[0070] The moving ring 250 has multiple second air channels 251 penetrating its thickness. The upper surface of the moving ring 250 and the reaction chamber 210 form a second space 300, which has a second exhaust port 280. An exhaust pump is connected to the second exhaust port 280. The gas after reaction in the reaction area is extracted through the second exhaust port 280 and the second air channels 251. In this scheme, by opening a first exhaust port 240 and a second exhaust port 280 on the reaction chamber 210, opening a first air channel 221 on the plasma confinement ring 220 to connect the first space 230 and the reaction area, and opening a second air channel 251 on the moving ring 250 to connect the second space 300 and the reaction area, the gas in the reaction area is extracted simultaneously through the first exhaust port 240 and the second exhaust port 280, thereby improving the extraction rate of the gas in the reaction area.

[0071] The base 260 has a centerline perpendicular to the wafer surface (the centerline is as follows). Figure 3 (As shown by the dotted line at the center of the base 260). Figure 3 In the vertical cross-section of the plasma processing device 20 shown, the first extraction port 240 and the second extraction port 280 are respectively located on both sides of the centerline. When gas is extracted from the reaction area through the first extraction port 240 or the second extraction port 280, a pressure gradient is formed along the circumference of the reaction chamber 210 within the first space 230 or the second space 300. Within the first space 230, Figure 3 The downward arrows shown indicate the gas flow direction when gas is drawn through the first extraction port 240. The thickness of the arrows indicates the magnitude of the airflow. The arrows closer to the first extraction port 240 are thicker than those farther away, indicating that a larger amount of gas flows out from the side closer to the first extraction port 240. Under the suction effect of the first extraction port 240, the gas pressure is lower closer to the first extraction port 240 and higher farther away. With the design of increasing the extraction rate in the reaction region, the gas pressure gradient in the first space 230 is conducted to the reaction region through the first air channel 221 on the plasma confinement ring 220. Under the suction effect of the first extraction port 240, in the reaction region, along the circumference of the reaction chamber 210, the gas pressure is lower closer to the first extraction port 240 and higher farther away. In the second space 300, Figure 3The upward arrows shown indicate the direction of gas flow when gas is drawn through the second exhaust port 280. The thickness of the arrows indicates the magnitude of the airflow. The arrows closer to the second exhaust port 280 are thicker than those farther from the second exhaust port 280, indicating that a larger amount of gas flows out from the side closer to the second exhaust port 280. Under the suction effect of the second exhaust port 280, the air pressure is lower closer to the second exhaust port 280 and higher farther away from the second exhaust port 280. At the same time, the air pressure gradient in the second space 300 is transmitted to the reaction area through the second air passage 251. Under the suction effect of the second exhaust port, in the reaction area, along the circumference of the reaction chamber 210, the air pressure is lower closer to the second exhaust port 280 and higher farther away from the second exhaust port 280. By setting the first air extraction port 240 and the second air extraction hole on both sides of the center line of the base 260, the pressure gradient caused by the air extraction from the first air extraction port 240 and the second air extraction port 280 can be balanced within the reaction area, thereby improving the uniformity of air pressure at various locations within the reaction area during the air extraction process.

[0072] like Figure 4 As shown, a wafer transfer port 270 is provided on the side wall of the reaction chamber 210, through which wafers are transferred into or out of the reaction chamber 210. The wafer transfer port 270 has a wafer transfer center (the position of the wafer transfer center is shown in the figure). Figure 4 (As shown by the dotted line at the center of the transfer port 270), the intersection of the center line and the base 260 is the center of the base, and the line connecting the center of the base and the transfer port center forms the first line; the second vent port 280 has a vent center, and the line connecting the center of the base and the vent center is the second line, and the angle A between the first line and the second line is less than 30°. The transfer port 270 opened on the reaction chamber 210 will disrupt the continuity of the sidewall of the reaction chamber 210, resulting in a decrease in the amount of plasma generated in the area near the transfer port 270, which in turn affects the uniformity of the wafer processing results in the area near the transfer port 270. In this embodiment, the angle between the first and second lines is less than 30°, meaning that the circumferential transfer port 270 of the reaction chamber 210 is positioned close to the second exhaust port 280. The exhaust pressure of the second exhaust port 280 can be adjusted relative to the first exhaust port 240. By adjusting the ratio of the exhaust pressure of the second exhaust port 280 to the first exhaust port 240, the unevenness of the wafer processing results caused by the reduced plasma quantity at the transfer port 270 is compensated, thereby improving the uniformity of plasma concentration throughout the reaction area and the uniformity of the wafer surface processing results. If the angle between the first and second lines is greater than 30°, although the exhaust pressure of the second exhaust port 280 can be adjusted relative to the first exhaust port 240, the relative distance between the circumferential transfer port 270 and the second exhaust port 280 of the reaction chamber 210 is relatively large, weakening the effect of compensating for the reduced plasma quantity at the transfer port 270 by adjusting the ratio of the exhaust pressure of the second exhaust port 280 to the first exhaust port 240.

[0073] The area enclosed by the moving ring 250, the plasma confinement ring 220, and the base 260 constitutes the plasma environment, which is the reaction zone. The surface of the moving ring 250 facing the plasma environment is an arc-shaped surface, and the height of the edge region of the moving ring 250 is lower than the height of the center region. By setting the side of the moving ring 250 facing the base 260 as an arc-shaped surface with a lower edge and a higher center, the arc-shaped surface structure can reduce the dead angle of gas extraction, avoid gas residue, and improve the efficiency of gas extraction when extracting gas from the reaction zone through the first extraction port 240 and the second extraction port 280.

[0074] In this embodiment, the upper surface of the plasma confinement ring 220 is lower than the upper surface of the base 260. A first air passage 221 is formed on the plasma confinement ring 220 in the vertical direction. Due to the pumping action, the air pressure is lower closer to the lower surface of the plasma confinement ring 220, and the pressure gradient difference is transmitted upward along the plasma confinement ring 220 to the area above the plasma confinement ring 220. In order to avoid the pumping action affecting the plasma concentration above the base 260, the upper surface of the plasma confinement ring 220 is set to be lower than the upper surface of the base 260, so that the upper surface of the plasma confinement ring 220 is far away from the area of ​​the upper surface of the base 260, thereby reducing the influence of the air pressure change near the plasma confinement ring 220 caused by the pumping action on the air pressure change of the upper surface of the base 260.

[0075] In other embodiments, the upper surface of the plasma confinement ring 220 is further lower than the lower surface of the base 260. In this way, the upper surface of the plasma confinement ring 220 can be further away from the upper surface of the base 260, further reducing the impact of pressure changes near the plasma confinement ring 220 caused by air extraction on the pressure changes on the upper surface of the base 260.

[0076] like Figure 5 As shown, the first air passage 221 includes multiple first ventilation slots 2211, each of which is annular and concentrically arranged. Each first ventilation slot 2211 is a narrow, elongated groove formed on the plasma confinement ring 220. The first ventilation slots 2211 are arranged circumferentially around the plasma confinement ring 220, and multiple annular first ventilation slots 2211 are arranged radially along the plasma confinement ring 220. The arrangement of multiple concentric first ventilation slots 2211 on the plasma confinement ring 220 increases the opening area of ​​the first air passage 221 on the plasma confinement ring 220, reduces the resistance of the plasma confinement ring 220 to gas flow, and improves the exhaust rate. In embodiments where the first air passage 221 is a first ventilation slot 2211, the depth-to-width ratio of the first air passage 221 is the ratio of the depth of the first ventilation slot 2211 to its radial width.

[0077] The aspect ratio of the first airway 221 or the second airway 251 can be selected during the manufacturing process of the plasma confinement ring 220 or the moving ring 250 based on the required pumping rate of the actual plasma processing equipment and the pumping power settings of the first pumping pump and the second pumping pump.

[0078] In another embodiment, such as Figure 6 As shown, the first air passage 221 includes a plurality of first air holes 2212, which are arranged in a ring. Multiple rings of first air holes 2212 are provided along the radial direction of the plasma confinement ring 220 to maximize the number of first air holes 2212 on the plasma confinement ring 220, thereby increasing the opening area of ​​the first air holes 2212, reducing resistance to gas flow, and improving the exhaust rate. In the embodiment where the first air passage 221 is a first air hole 2212, the depth-to-width ratio of the first air passage 221 is the ratio of the depth of the first air hole 2212 to the diameter of the first air hole 2212.

[0079] The second air passage 251 includes multiple second vent slots, which are annular and concentrically arranged. Each second vent slot is a narrow groove formed on the moving ring 250, circumferentially arranged around the moving ring 250, with multiple annular second vent slots arranged radially along the moving ring 250. The multiple concentric second vent slots on the moving ring 250 increase the opening area of ​​the second air passage 251, reduce the resistance of the moving ring 250 to gas flow, and improve the exhaust rate. In embodiments where the second air passage 251 is a second vent slot, the depth-to-width ratio of the second air passage 251 is the ratio of the depth of the second vent slot to its radial width.

[0080] The second air passage 251 includes multiple second air holes arranged in a ring. Multiple rings of second air holes are provided along the radial direction of the moving ring 250 to maximize the number of second air holes on the moving ring 250, thereby increasing the opening area of ​​the second air holes, reducing resistance to gas flow, and improving the exhaust rate. In embodiments where the second air passage 251 is a second air hole, the depth-to-width ratio of the second air passage 251 is the ratio of the depth of the second air hole to its diameter.

[0081] In this embodiment, a first extraction port 240 is connected to a first extraction pump, and a second extraction port 280 is connected to a second extraction pump. The maximum extraction power of the first extraction port 240 is greater than the maximum extraction power of the second extraction port 280. The first extraction port 240 and the second extraction port 280 are respectively connected to the first extraction pump and the second extraction pump. When it is necessary to adjust the extraction pressure of the first extraction port 240 relative to the second extraction port 280 according to the plasma distribution state of the reaction chamber 210, this can be achieved by adjusting the ratio of the extraction power between the first extraction pump and the second extraction pump. Conversely, if the first extraction port 240 and the second extraction port 280 are connected to the same extraction pump, the ratio of the extraction power between the first extraction port 240 and the second extraction port 280 is fixed, and it is impossible to adjust the plasma distribution state of the reaction chamber 210 by changing the extraction power of the first extraction port 240 and the second extraction port 280.

[0082] The first pump can be either a molecular pump or a dry pump; the second pump can also be either a molecular pump or a dry pump. A molecular pump is an oil-free vacuum pump that uses high-speed rotating blades to convert the momentum of gas molecules into directional motion, thereby compressing the gas and driving it towards the pump outlet. A dry pump is a vacuum pump that does not use any oil or other liquid as a sealing or lubricating medium during operation. In this design, either a molecular pump or a dry pump can achieve a vacuum environment for either the first or second pump.

[0083] In other embodiments, the first extraction port 240 and the second extraction port 280 are respectively connected to the same extraction pump, which reduces the number of extraction pumps required for the plasma processing device 20. Furthermore, the extraction port of the extraction pump is directly connected to the first extraction port 240, while the second extraction port 280 is connected to the extraction pump via a pipe. Because the second extraction port 280 is connected to the extraction pump via a pipe, there is power loss due to the pipe connection; therefore, the extraction power of the extraction pump at the second extraction port 280 is less than the extraction power at the first extraction port 240.

[0084] Continue as Figure 3 As shown, the plasma processing equipment 20 also includes a spray head 290, which is disposed within the reaction chamber 210 and positioned above and opposite the base 260. The spray head 290 is used to introduce reactive gas into the reaction chamber 210. The reactive gas generates plasma under the action of the radio frequency components to process the wafer on the base 260. A through-hole for mounting a substrate is provided in the center of the moving ring 250. The spray head 290 is disposed below the mounting substrate and is positioned opposite the base 260. The mounting substrate, together with the spray head 290, is disposed in the through-hole in the center of the moving ring 250. When the moving ring 250 moves vertically, it surrounds the periphery of the spray head 290, and the spray head 290 remains within the through-hole in the center of the moving ring 250, without interfering with the moving ring 250.

[0085] The plasma processing equipment 20 also includes a lifting assembly connected to a moving ring 250 to drive the moving ring 250 to move up and down within the reaction chamber 210. When in process mode, the moving ring 250 descends and closes the wafer transfer port 270. The upper surface of the moving ring 250 and the inner wall of the upper half of the reaction chamber form a second space 300. The lifting assembly drives the moving ring 250 to move vertically within the reaction chamber 210. When it is necessary to open the wafer transfer port 270 to allow wafers to enter or exit the reaction chamber 210, the lifting assembly drives the moving ring 250 to rise vertically until the side of the moving ring 250 no longer obstructs the wafer transfer port 270, thus connecting the wafer transfer port 270 with the reaction area inside the reaction chamber 210. When it is necessary to close the wafer transfer port 270, the lifting assembly drives the moving ring 250 to fall until the side of the moving ring 250 blocks the wafer transfer port 270, thus disconnecting the wafer transfer port 270 with the reaction area inside the reaction chamber 210.

[0086] like Figure 7 As shown, the present invention also provides a method of using a plasma processing device, the method of using the plasma processing device 20 as described above, the method of using the device comprising:

[0087] Gas is extracted from the reaction chamber 210 through the first extraction port 240 and the second extraction port 280. When it is necessary to extract gas from the reaction area in the reaction chamber 210, gas is extracted from the reaction chamber 210 through both the first extraction port 240 and the second extraction port 280. Compared with a reaction chamber that only has one extraction port, this can improve the gas extraction speed.

[0088] The base 260 has a centerline perpendicular to its surface. A first extraction port 240 and a second extraction port 280 are respectively located on either side of the centerline. During the extraction process, the first and second extraction pumps measure the gas pressure in the reaction region of the reaction chamber 210 near the plasma confinement ring 220 and the moving ring 250, respectively. Based on the measured gas pressure near the plasma confinement ring 220 and the moving ring 250, the extraction power of the first extraction pump relative to the second extraction pump is adjusted. Specifically, when the measured gas pressure in the reaction region of the reaction chamber 210 near the first extraction port 240 is higher than the gas pressure near the second extraction port 280... This indicates that the pumping power of the first pump relative to the second pump is too low. In this case, it is necessary to increase the pumping power of the first pump relative to the second pump. This can be done by directly increasing the pumping power of the first pump, decreasing the pumping power of the second pump, or simultaneously increasing the pumping power of the first pump and decreasing the pumping power of the second pump. The specific adjustment method can be determined based on the total pumping power of the first and second pumps and the pumping power of the first or second pump at the time. The goal is to increase the pumping power of the first pump relative to the second pump, thereby improving the uniformity of gas pressure of the reaction gas at different positions in the reaction chamber 210.

[0089] When the gas pressure near the first extraction port 240 in the reaction area of ​​the reaction chamber 210 is measured to be lower than the gas pressure near the second extraction port 280, the ratio of the extraction power of the second extraction pump to the first extraction pump is relatively increased. This can be done by directly increasing the extraction power of the second extraction pump, decreasing the extraction power of the first extraction pump, or increasing the extraction power of the second extraction pump while decreasing the extraction power of the first extraction pump. The specific adjustment method can be determined based on the total extraction power of the first and second extraction pumps and the current extraction power of the first or second extraction pump. The goal is to reduce the extraction power of the second extraction pump relative to the first extraction pump, thereby improving the uniformity of gas pressure of the reaction gas at different positions in the reaction chamber 210.

[0090] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plasma processing device, characterized in that, include: The reaction chamber contains a base for supporting the wafer; A plasma confinement ring is disposed between the base and the side wall of the reaction chamber. The plasma confinement ring has multiple first air channels that penetrate its thickness. The lower surface of the plasma confinement ring and the reaction chamber form a first space. The first air channels are connected to the first space. The first space has a first air extraction port. A movable ring is disposed above the plasma confinement ring and the base. The movable ring has multiple second air channels that penetrate its thickness. The upper surface of the movable ring and the reaction chamber form a second space, and the second space has a second air extraction port. The base has a center line perpendicular to its surface, and the first air extraction port and the second air extraction port are respectively disposed on both sides of the center line.

2. The plasma processing equipment as described in claim 1, characterized in that, The reaction chamber has a transfer port on its side wall, the transfer port has a transfer center, the intersection of the center line and the base is the base center, and the line connecting the base center and the transfer center forms a first line; the second exhaust port has an exhaust port center, the line connecting the base center and the exhaust port center is a second line, and the angle between the first line and the second line is less than 30°.

3. The plasma processing apparatus as described in claim 1, characterized in that, The area enclosed by the moving ring, the plasma confinement ring, and the base is a plasma environment. The surface of the moving ring facing the plasma environment is an arc-shaped surface, and the height of the edge region of the moving ring is lower than the height of the central region of the moving ring.

4. The plasma processing apparatus as described in claim 1, characterized in that, The upper surface of the plasma confinement ring is lower than the upper surface of the base.

5. The plasma processing apparatus as described in claim 4, characterized in that, The upper surface of the plasma confinement ring is lower than the lower surface of the base.

6. The plasma processing apparatus as described in claim 1, characterized in that, The first airway includes a plurality of first ventilation slots, which are annular; and the plurality of first ventilation slots are arranged concentrically.

7. The plasma processing apparatus as described in claim 1, characterized in that, The first airway includes a plurality of first air holes, which are arranged in a ring, and multiple rings of first air holes are provided along the radial direction of the plasma confinement ring.

8. The plasma processing apparatus as described in claim 1, characterized in that, The second airway includes a plurality of second ventilation slots, which are annular; and the plurality of second ventilation slots are arranged concentrically.

9. The plasma processing apparatus as described in claim 1, characterized in that, The second airway includes a plurality of second air holes, which are arranged in a ring, and multiple rings of second air holes are provided along the radial direction of the moving ring.

10. The plasma processing apparatus as described in claim 1, characterized in that, The first air extraction port is connected to a first air extraction pump, and the second air extraction port is connected to a second air extraction pump. The maximum air extraction power of the first air extraction port is greater than the maximum air extraction power of the second air extraction port.

11. The plasma processing apparatus as described in claim 10, characterized in that, The first pump includes a molecular pump or a dry pump; the second pump includes a molecular pump or a dry pump.

12. The plasma processing apparatus as described in claim 1, characterized in that, The first and second air extraction ports are respectively connected to the same air pump.

13. The plasma processing apparatus as described in claim 1, characterized in that, It also includes a spray head, which is disposed inside the reaction chamber and located above the base and opposite to the base, with the movable ring surrounding the periphery of the spray head.

14. The plasma processing apparatus as described in claim 1, characterized in that, The reaction chamber has a transfer port on its side wall. The plasma processing equipment also includes a lifting assembly connected to the moving ring to drive the moving ring to move up and down in the reaction chamber. When in process mode, the moving ring descends and closes the transfer port. The upper surface of the moving ring and the inner wall of the upper half of the reaction chamber form the second space.

15. A method of using a plasma processing device, characterized in that, The method of use is applied to the plasma processing apparatus as described in any one of claims 1-14, and the method of use includes: Gas is extracted from the reaction chamber through the first extraction port and gas is extracted from the reaction chamber through the second extraction port.

16. The method of using the plasma processing equipment as described in claim 15, characterized in that, The base has a centerline perpendicular to its surface. The first and second air extraction ports are respectively located on both sides of the centerline. During the air extraction process, the first and second air extraction pumps measure the gas pressure in the reaction region of the reaction chamber near the plasma confinement ring and the moving ring, respectively. Based on the gas pressure measurement results near the plasma confinement ring and the moving ring, the pumping power of the first air extraction pump relative to the second air extraction pump is adjusted to improve the gas pressure uniformity of the reaction gas at different positions in the reaction chamber.

17. The method of using the plasma processing equipment as described in claim 16, characterized in that, When the measured air pressure in the reaction chamber near the first pump is higher than the air pressure near the second pump, the ratio of the pumping power of the second pump to the first pump is relatively reduced; when the measured air pressure in the reaction chamber near the first pump is lower than the air pressure near the second pump, the ratio of the pumping power of the second pump to the first pump is relatively increased.

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