Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of suppressing generation of temperature deviation in a surface of a substrate. According to one embodiment, a substrate processing apparatus includes: a mounting unit having a mounting table on which a substrate can be mounted, the mounting unit being capable of rotating the mounted substrate; a cooling unit capable of supplying a cooling gas to a space between the mounting table and the substrate via a cooling gas nozzle; and a liquid supply unit capable of supplying a liquid to a surface of the substrate opposite to the surface of the mounting table. The cooling gas nozzle has at least one first nozzle hole inclined in a direction away from a rotational center axis of the substrate as the cooling gas nozzle approaches the substrate side.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus. Background Technology

[0002] A freeze cleaning method has been proposed as a way to remove contaminants such as particles adhering to the surface of substrates such as imprinting templates, photolithography masks, and semiconductor wafers.

[0003] In the freeze cleaning method, liquid is first supplied to the surface of a rotating substrate. Then, the liquid supply is stopped, and a portion of the supplied liquid is discharged, forming a liquid film on the substrate surface. The liquid film formed on the substrate surface is frozen by cooling gas supplied to the back of the substrate. As the liquid film freezes to form a freeze film, contaminants such as particulate matter are drawn into the freeze film, thereby separating the contaminants from the substrate surface. Next, liquid is supplied to the freeze film to melt it, removing the contaminants along with the liquid from the substrate surface.

[0004] Here, the periphery of the substrate is close to the external environment not only in the direction perpendicular to the substrate surface but also in the direction parallel to the substrate surface, thus increasing the amount of heat entering the periphery from the outside. Therefore, if cooling gas is supplied only to the back side of the substrate, temperature deviations may sometimes occur within the substrate surface. If temperature deviations occur within the substrate surface, it is difficult to improve the contaminant removal rate.

[0005] Therefore, it is desirable to develop a substrate processing apparatus that can suppress in-plane temperature deviations in the substrate.

[0006] [Existing technical documents]

[0007] [Patent Literature]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 2018-026436 Summary of the Invention

[0009] [The problem the invention aims to solve]

[0010] The problem to be solved by the present invention is to provide a substrate processing apparatus that can suppress temperature deviations generated in the plane of a substrate.

[0011] [Technical means to solve the problem]

[0012] The substrate processing apparatus of the embodiment includes: a mounting section having a mounting stage capable of mounting a substrate and capable of rotating the mounted substrate; a cooling section capable of supplying cooling gas to the space between the mounting stage and the substrate via a cooling gas nozzle; and a liquid supply section capable of supplying liquid to a surface of the substrate opposite to the surface of the mounting stage. The cooling gas nozzle has at least one first nozzle orifice that is inclined in a direction away from the rotational axis of the substrate as it approaches the substrate side.

[0013] [The effects of the invention]

[0014] The present invention provides a substrate processing apparatus capable of suppressing temperature deviations generated in the plane of a substrate. Attached Figure Description

[0015] Figure 1 This is a schematic diagram illustrating the substrate processing apparatus of this embodiment.

[0016] Figure 2 (a) is a schematic plan view of the cooling gas nozzle viewed from the direction of the rotation center axis of the substrate. Figure 2 (b) is a schematic cross-sectional view of the cooling gas nozzle viewed from a direction intersecting the rotation center axis of the substrate.

[0017] Figure 3 This is a schematic cross-sectional view illustrating a cooling gas nozzle of another embodiment.

[0018] Figure 4 This is a schematic cross-sectional view illustrating a cooling gas nozzle of another embodiment.

[0019] Figure 5 This is a schematic cross-sectional view illustrating a cooling gas nozzle of another embodiment.

[0020] Figure 6 This is a timing diagram used to illustrate the operation of the substrate processing apparatus.

[0021] Figure 7 This is a schematic cross-sectional view used to illustrate the cooling gas nozzle of the comparative example.

[0022] Figure 8 This is a graph used to illustrate the effect of the cooling gas nozzle in the comparative example.

[0023] Figure 9 This is a diagram illustrating the effect of the cooling gas nozzle in this embodiment.

[0024] Explanation of icon numbers

[0025] 1: Substrate processing device

[0026] 2: Loading section

[0027] 2a: Platform

[0028] 2a1: Support section

[0029] 2aa: Hole

[0030] 2b: Shaft

[0031] 2c: Driver Unit

[0032] 3: Cooling section

[0033] 3a: Coolant section

[0034] 3a1: Cooling gas

[0035] 3b: Filter

[0036] 3C: Flow Control Department

[0037] 3d: Cooling gas supply pipe

[0038] 4: First Liquid Supply Department

[0039] 4a, 5a: Liquid storage section

[0040] 4b, 5b: Supply Department

[0041] 4c, 5c: Flow control department

[0042] 4d: Liquid nozzle

[0043] 5: Second Liquid Supply Section

[0044] 6: Casing

[0045] 6a: Cover

[0046] 6b: Divider

[0047] 6c: Discharge outlet

[0048] 6c1: Exhaust pipe

[0049] 6c2: Discharge pipe

[0050] 7: Air Supply Department

[0051] 7a: Air

[0052] 8: Testing Department

[0053] 9: Exhaust section

[0054] 10, 12, 13, 20, 200: Cooling gas nozzles

[0055] 10a: Supply Port

[0056] 10b, 10c: Flow path

[0057] 10d, 12a, 12b, 13a, 20A, 20a, 20B, 20b, 20C, 20c, 220b, 220c: Nozzle orifice

[0058] 10d1, 20b1, 20c1: Extension lines

[0059] 11: Controller

[0060] 12a1, 12b1, 13a1, da: Opening

[0061] 100: Substrate

[0062] 100a: Back

[0063] 100b: Surface

[0064] 100c: Rotation center axis

[0065] 101, 102: Liquid

[0066] A, A1, A2: Points

[0067] G, R, R1, R2: Distance

[0068] θ, θ1, θ2: Inclination angles Detailed Implementation

[0069] Hereinafter, embodiments will be illustrated with reference to the accompanying drawings. Furthermore, in each drawing, the same structural elements will be labeled with the same symbols and detailed descriptions will be omitted where appropriate.

[0070] The substrate 100 shown below can be configured as a plate-like object for semiconductor wafers, imprinting templates, photolithography masks, microelectromechanical systems (MEMS), etc.

[0071] In this case, the substrate 100 may be a substrate with a pattern of irregularities formed on its surface, or it may be a substrate before the irregularities are formed (e.g., a so-called bulk substrate).

[0072] Furthermore, as an example, the following description will illustrate the case where the substrate 100 is a photolithography mask. When the substrate 100 is a photolithography mask, the planar shape of the substrate 100 can be set to approximately quadrilateral.

[0073] Figure 1 This is a schematic diagram illustrating the substrate processing apparatus 1 of this embodiment.

[0074] like Figure 1As shown, the substrate processing apparatus 1 includes, for example, a mounting section 2, a cooling section 3, a first liquid supply section 4, a second liquid supply section 5, a housing 6, an air supply section 7, a detection section 8, an exhaust section 9, a cooling gas nozzle 10, and a controller 11.

[0075] The mounting section 2 includes, for example, a mounting platform 2a, a rotating shaft 2b, and a drive section 2c.

[0076] The mounting stage 2a is rotatably disposed inside the housing 6. The mounting stage 2a is plate-shaped. A plurality of support portions 2a1 for supporting the substrate 100 are provided on one of the main surfaces of the mounting stage 2a. The edge of the back surface 100a of the substrate 100 contacts the plurality of support portions 2a1. When the substrate 100 is supported on the plurality of support portions 2a1, the surface 100b of the substrate 100 (the surface on the cleaning side) faces the opposite side to the mounting stage 2a.

[0077] In addition, a hole 2aa is provided in the central part of the mounting stage 2a, which extends through the thickness direction of the mounting stage 2a.

[0078] The rotating shaft 2b is cylindrical. One end of the rotating shaft 2b is engaged with the mounting platform 2a. The other end of the rotating shaft 2b is disposed outside the housing 6. The rotating shaft 2b is connected to the drive unit 2c outside the housing 6.

[0079] A cooling gas supply pipe 3d (described later) is installed at the end of the rotating shaft 2b opposite to the side of the mounting platform 2a. A shaft seal (not shown) is provided between the end of the rotating shaft 2b opposite to the side of the mounting platform 2a and the cooling gas supply pipe 3d. Therefore, the end of the rotating shaft 2b opposite to the side of the mounting platform 2a is sealed in an airtight manner.

[0080] The drive unit 2c is disposed outside the housing 6. The drive unit 2c is connected to the rotating shaft 2b. The drive unit 2c may be a rotating device such as a motor. The rotational force of the drive unit 2c is transmitted to the mounting stage 2a via the rotating shaft 2b. Therefore, the mounting stage 2a and the substrate 100 mounted on the mounting stage 2a can be rotated by the drive unit 2c.

[0081] Furthermore, the drive unit 2c can not only change the start and stop of rotation, but also change the rotational speed. The drive unit 2c may include, for example, a control motor such as a servo motor.

[0082] That is, the mounting section 2 has a mounting stage 2a capable of mounting the substrate 100, and the mounted substrate 100 can be rotated.

[0083] In this case, the rotation center axis 100c of the substrate 100 placed on the mounting stage 2a can be approximately coaxial with the rotation center axis of the mounting stage 2a (e.g., the center axis of the rotating shaft 2b).

[0084] The cooling unit 3 supplies cooling gas 3a1 to the back surface 100a of the substrate 100 and the space between the mounting stage 2a and the back surface 100a of the substrate 100 via the cooling gas nozzle 10 described later.

[0085] The cooling unit 3 includes, for example, a coolant section 3a, a filter 3b, a flow control section 3c, and a cooling gas supply pipe 3d. The coolant section 3a, the filter 3b, and the flow control section 3c are disposed outside the housing 6.

[0086] The coolant section 3a collects coolant and generates cooling gas 3a1. The coolant is formed by liquefying the cooling gas 3a1. The cooling gas 3a1 is not particularly limited as long as it is a gas that does not easily react with the material of the substrate 100. For example, the cooling gas 3a1 can be an inert gas such as nitrogen, helium, or argon.

[0087] The coolant section 3a includes a tank and a vaporization section. The tank holds coolant, and the vaporization section vaporizes the coolant in the tank. A cooling device is provided on the tank to maintain the temperature of the coolant. The vaporization section raises the temperature of the coolant, generating cooling gas 3a1 from it. The temperature of the cooling gas 3a1 only needs to be below the freezing point of the liquid 101. For example, the temperature of the cooling gas 3a1 is approximately -170°C.

[0088] The filter 3b is connected to the coolant section 3a via a pipe. The filter 3b prevents contaminants such as particles contained in the coolant from flowing out to the substrate 100 side.

[0089] The flow control unit 3c is connected to the filter 3b via piping. The flow control unit 3c controls the flow rate of the cooling gas 3a1. The flow control unit 3c can be, for example, a mass flow controller (MFC). Alternatively, the flow control unit 3c can also indirectly control the flow rate of the cooling gas 3a1 by controlling the supply pressure of the cooling gas 3a1. In this case, the flow control unit 3c can be, for example, an automatic pressure controller (APC).

[0090] The temperature of the cooling gas 3a1 generated from the coolant in the coolant section 3a is approximately a predetermined temperature. Therefore, by controlling the flow rate of the cooling gas 3a1 using the flow control unit 3c, the temperature of the substrate 100 and the temperature of the liquid 101 on the surface 100b of the substrate 100 can be controlled. For example, by controlling the flow rate of the cooling gas 3a1 using the flow control unit 3c, the liquid 101 can be set to a supercooled state in the supercooling process described later.

[0091] The cooling gas supply pipe 3d is cylindrical. One end of the cooling gas supply pipe 3d is connected to the flow control unit 3c. A cooling gas nozzle 10 (described later) is provided at the other end of the cooling gas supply pipe 3d (the end on the discharge side of the cooling gas 3a1). The cooling gas 3a1, whose flow rate is controlled by the flow control unit 3c, is supplied to the cooling gas nozzle 10 via the cooling gas supply pipe 3d.

[0092] The first liquid supply unit 4 supplies liquid 101 to the surface 100b of the substrate 100 (the side opposite to the stage 2a). During the freezing process (solid-liquid phase) described later, when the liquid 101 solidifies, its volume changes, thus generating pressure waves. It is believed that these pressure waves separate contaminants adhering to the surface 100b of the substrate 100. Therefore, the liquid 101 is not particularly limited as long as it is a liquid that does not readily react with the material of the substrate 100.

[0093] Furthermore, it is believed that if the liquid 101 is configured to increase in volume upon freezing, the physical force accompanying the increase in volume can be used to separate contaminants adhering to the surface of the substrate 100. Therefore, the liquid 101 is preferably configured to be a liquid that does not readily react with the material of the substrate 100 and increases in volume upon freezing. For example, the liquid 101 can be water (e.g., pure water, ultrapure water, etc.) or a liquid with water as its main component. Liquids with water as their main component can be, for example, a mixture of water and alcohol, a mixture of water and an acidic solution, or a mixture of water and an alkaline solution.

[0094] The first liquid supply unit 4 includes, for example, a liquid collection unit 4a, a supply unit 4b, a flow control unit 4c, and a liquid nozzle 4d. The liquid collection unit 4a, the supply unit 4b, and the flow control unit 4c are disposed outside the housing 6.

[0095] The liquid receiving section 4a receives the liquid 101. The liquid 101 is received in the liquid receiving section 4a at a temperature higher than its freezing point. The temperature of the liquid 101 is, for example, room temperature (20°C).

[0096] The supply unit 4b is connected to the liquid receiving unit 4a via piping. The supply unit 4b supplies the liquid 101 collected in the liquid receiving unit 4a to the liquid nozzle 4d. The supply unit 4b is, for example, a pump that is resistant to the liquid 101.

[0097] The flow control unit 4c is connected to the supply unit 4b via piping. The flow control unit 4c controls the flow rate of the liquid 101 supplied by the supply unit 4b. The flow control unit 4c may be configured as a flow control valve, for example. In addition, the flow control unit 4c can also start and stop the supply of liquid 101.

[0098] A liquid nozzle 4d is disposed inside the housing 6. The liquid nozzle 4d is cylindrical. One end of the liquid nozzle 4d is connected to the flow control unit 4c via a pipe. The other end of the liquid nozzle 4d faces the surface 100b of the substrate 100 placed on the mounting stage 2a. Therefore, the liquid 101 ejected from the liquid nozzle 4d is supplied to the surface 100b of the substrate 100.

[0099] The other end of the liquid nozzle 4d (the outlet of the liquid 101) is located, for example, approximately at the center of the surface 100b of the substrate 100. The liquid 101 ejected from the liquid nozzle 4d diffuses from approximately the center of the surface 100b of the substrate 100, forming a liquid film of approximately a certain thickness on the surface 100b of the substrate 100. Hereinafter, the film of liquid 101 formed on the surface 100b of the substrate 100 will be simply referred to as a liquid film.

[0100] The second liquid supply unit 5 supplies liquid 102 to the surface 100b of the substrate 100.

[0101] The second liquid supply unit 5 includes a liquid collection unit 5a, a supply unit 5b, a flow control unit 5c, and a liquid nozzle 4d.

[0102] Liquid 102 can be used in the thawing process described later. Therefore, there is no particular limitation as long as liquid 102 is not likely to react with the material of substrate 100 and is not likely to remain on the surface 100b of substrate 100 during the drying process described later. Liquid 102 can be, for example, water (e.g., pure water, ultrapure water, etc.) or a mixture of water and alcohol.

[0103] The liquid collection section 5a can be the same as the liquid collection section 4a. The supply section 5b can be the same as the supply section 4b. The flow control section 5c can be the same as the flow control section 4c.

[0104] The temperature of liquid 102 can be set to a temperature higher than the freezing point of liquid 101. Additionally, the temperature of liquid 102 can be set to a temperature that allows frozen liquid 101 to thaw. For example, the temperature of liquid 102 can be set to around room temperature (20°C).

[0105] Alternatively, liquid 101 may be used in the thawing process described later. If liquid 101 is also used in the thawing process, the second liquid supply unit 5 may be omitted.

[0106] Furthermore, the liquid nozzle 4d can be used in both the first liquid supply unit 4 and the second liquid supply unit 5. Alternatively, a liquid nozzle for spraying liquid 101 and a liquid nozzle for spraying liquid 102 can be provided separately.

[0107] The housing 6 is box-shaped. A cover 6a is provided inside the housing 6. The cover 6a receives liquids 101 and 102 that are supplied to the substrate 100 and discharged to the outside of the substrate 100 due to the rotation of the substrate 100. In addition, a partition plate 6b is provided inside the housing 6. The partition plate 6b is disposed between the outer surface of the cover 6a and the inner surface of the housing 6.

[0108] A discharge port 6c is provided on the side of the bottom surface of the housing 6. Used cooling gas 3a1, air 7a, liquid 101, and liquid 102 are discharged to the outside of the housing 6 through the discharge port 6c. An exhaust pipe 6c1 and a discharge pipe 6c2 are connected to the discharge port 6c. Used cooling gas 3a1 and air 7a are discharged to the outside of the housing 6 through the exhaust pipe 6c1. Used liquid 101 and liquid 102 are discharged to the outside of the housing 6 through the discharge pipe 6c2.

[0109] An air supply unit 7 is provided, for example, on the top plate of the housing 6. The air supply unit 7 supplies air 7a (external air) to the space between the partition plate 6b and the top plate of the housing 6. Therefore, the pressure in the space between the partition plate 6b and the top plate of the housing 6 is higher than the external pressure. As a result, the air 7a supplied by the air supply unit 7 is easily guided to the exhaust port 6c. Furthermore, it can suppress the intrusion of particulate matter and other pollutants from the exhaust port 6c into the interior of the housing 6.

[0110] The detection unit 8 is disposed in the space between the partition plate 6b and the top plate of the housing 6. The detection unit 8 detects the temperature of the liquid film or the frozen film formed by the freezing of the liquid film. The detection unit 8 may be, for example, a radiation thermometer, a thermal observer, a thermocouple, a temperature measuring resistor, etc. The detected temperature of the liquid film can be used, for example, to control the supercooling state of the liquid 101 in the supercooling process described later.

[0111] The exhaust section 9 is connected to the exhaust pipe 6c1. The exhaust section 9 can be, for example, an exhaust pump such as a blower.

[0112] The controller 11 controls the operation of various elements installed in the substrate processing apparatus 1. The controller 11 may include, for example, an arithmetic unit such as a central processing unit (CPU) and a storage unit such as a semiconductor memory. The controller 11 may be, for example, a computer. The storage unit stores control programs that control the operation of various elements installed in the substrate processing apparatus 1. The arithmetic unit uses the control programs stored in the storage unit, data input by the operator, data from the detection unit 8, etc., to control the operation of various elements installed in the substrate processing apparatus 1.

[0113] Here, if cooling gas 3a1 is supplied only to the back surface 100a of substrate 100, a temperature difference may sometimes occur within the surface of substrate 100. For example, the periphery of substrate 100 is close to the external environment not only in the direction perpendicular to the surface of substrate 100 but also in the direction parallel to the surface of substrate 100, thus increasing the amount of heat entering the periphery of substrate 100 from the outside. Therefore, if cooling gas 3a1 is supplied only to the back surface 100a of substrate, the cooling near the periphery of substrate 100 becomes insufficient compared to the center, sometimes resulting in temperature deviations within the surface of substrate 100. If temperature deviations occur within the surface of substrate 100, the separation state of contaminants in each region of substrate 100 will be deviated in the cooling process (overcooling process + freezing process) described later, sometimes making it difficult to improve the contaminant removal rate throughout the entire region of substrate 100.

[0114] Therefore, a cooling gas nozzle 10 is provided in the substrate processing apparatus 1 of this embodiment. The cooling gas nozzle 10 is a nozzle having at least one nozzle hole that supplies cooling gas 3a1 to the surface of the substrate 100 on the stage 2a side.

[0115] like Figure 1 As shown, the cooling gas nozzle 10 is disposed at the end of the cooling gas supply pipe 3d on the discharge side of the cooling gas 3a1. The cooling gas nozzle 10 is disposed, for example, inside the hole 2aa of the mounting stage 2a. The end of the cooling gas nozzle 10 on the substrate 100 side may protrude further towards the substrate 100 side of the mounting stage 2a than the substrate 100 side surface, may be coplanar with the substrate 100 side surface of the mounting stage 2a, or may be located inside the hole 2aa of the mounting stage 2a. Furthermore, Figure 1 The end of the cooling gas nozzle 10 on the substrate 100 side, as illustrated in the example, protrudes further toward the substrate 100 side than the surface of the mounting stage 2a on the substrate 100 side.

[0116] Figure 2 (a) is a schematic plan view of the cooling gas nozzle 10 as viewed from the direction of the rotation center axis 100c of the substrate 100.

[0117] Figure 2 (b) is a schematic cross-sectional view of the cooling gas nozzle 10 viewed from the direction intersecting the rotation center axis 100c of the substrate 100.

[0118] like Figure 1 , Figure 2 of (a), Figure 2As shown in (b), the cooling gas nozzle 10 is, for example, a cylindrical shape covered at both ends by plate-like members, and has a supply port 10a, a flow path 10b, a flow path 10c, and a nozzle hole 10d (an example of the first nozzle hole). The supply port 10a, the flow path 10b, the flow path 10c, and the nozzle hole 10d are interconnected. The nozzle hole 10d serves as a flow path for supplying cooling gas 3a1 from the cooling gas nozzle 10 to the substrate 100, and is provided with an opening at the end face (nozzle face) of the cooling gas nozzle 10 on the substrate 100 side. Cooling gas 3a1 is supplied from the supply port 10a into the interior of the cooling gas nozzle 10, and then via the flow path 10b and the flow path 10c to the substrate 100 through the nozzle hole 10d.

[0119] A supply port 10a is located approximately at the center of the cooling gas nozzle 10 and extends along the rotational axis 100c of the substrate 100. One end of the supply port 10a opens into a plate-like member at the end of the cooling gas nozzle 10 opposite to the substrate 100 side. A cooling gas supply pipe 3d is connected to one end of the supply port 10a. The other end of the supply port 10a opens into the flow path 10b.

[0120] The flow path 10b is disposed inside the cooling gas nozzle 10. The flow path 10b extends, for example, in a direction intersecting the rotational central axis 100c of the substrate 100. The flow path 10b may be, for example, a cylindrical space surrounded by plate-like members disposed at both ends of the cooling gas nozzle 10 and the inner circumferential surface.

[0121] The flow path 10b is, for example, a space with an inner diameter larger than that of the cooling gas supply pipe 3d. Therefore, the cooling gas nozzle 10 can supply cooling gas 3a1 from the nozzle orifice 10d to the back surface of the substrate 100 after the cooling gas 3a1 supplied by the cooling gas supply pipe 3d has been retained in the flow path 10b. Thus, cooling gas 3a1 at a constant pressure within the space of the flow path 10b can be supplied from the nozzle orifice 10d, thereby achieving a stable cooling effect. Furthermore, when multiple nozzle orifices 10d are provided in the cooling gas nozzle 10, these multiple nozzle orifices 10d can be connected to a single flow path 10b. Therefore, by ejecting the cooling gas 3a1 retained in the common flow path 10b from the multiple nozzle orifices 10d, cooling gas 3a1 can be supplied at approximately the same pressure, resulting in a uniform cooling effect within the surface of the substrate 100.

[0122] A flow path 10c is disposed inside the cooling gas nozzle 10. The flow path 10c extends, for example, along the rotational central axis 100c of the substrate 100. One end of the flow path 10c opens at the end of the flow path 10b on the substrate 100 side. Near the other end of the flow path 10c, the end of the nozzle orifice 10d opposite to the substrate 100 side is connected. The flow path 10c is, for example, columnar, and one can be provided relative to one nozzle orifice 10d. Furthermore, if multiple nozzle orifices 10d are provided, one flow path 10c can be provided relative to multiple nozzle orifices 10d. For example, multiple nozzle orifices 10d can be connected to an annular flow path 10c.

[0123] Furthermore, flow path 10c is not necessary and can be omitted. If flow path 10c is omitted, nozzle orifice 10d is connected to flow path 10b.

[0124] At least one nozzle orifice 10d may be provided. In the case of multiple nozzle orifices 10d, for example, the multiple nozzle orifices 10d may be arranged at different positions radially with the rotation center axis 100c of the substrate 100 (the rotation center axis of the stage 2a) as the center. The nozzle orifices 10d are connected to the supply port 10a via flow path 10c and flow path 10b. Figure 2 As shown in (b), the nozzle orifice 10d is inclined relative to the rotation center axis 100c of the substrate 100. For example, the nozzle orifice 10d is inclined in a direction away from the rotation center axis 100c of the substrate 100 as it approaches the side of the substrate 100.

[0125] In this case, such as Figure 2 of (a), Figure 2 As shown in (b), the distance R between the point A (corresponding to an example of the first point) where the extension line 10d1 of the central axis of the nozzle hole 10d intersects the back surface 100a of the substrate 100 and the rotation center axis 100c of the substrate 100 (corresponding to an example of the first distance) can be less than or equal to the maximum value of the distance between the periphery of the substrate 100 and the rotation center axis 100c of the substrate 100 (corresponding to an example of the second distance).

[0126] For example, if the planar shape of the substrate 100 is quadrilateral, the distance R can be shorter than or the same as half the length of the diagonal. For example, if the planar shape of the substrate 100 is circular, the distance R can be shorter than or the same as the radius.

[0127] Furthermore, there is a correlation between the distance R and the angle (tilt angle θ) between the extension line 10d1 of the central axis of the nozzle orifice 10d and the rotation center axis 100c of the substrate 100. For example, the longer the distance R, the larger the tilt angle θ becomes.

[0128] The nozzle hole 10d can be, for example, a hole provided in the cooling gas nozzle 10, or a hole provided in the tube (cylindrical component) of the cooling gas nozzle 10. That is, a tube can be inserted into a hole formed in the end face (nozzle face) of the cooling gas nozzle 10 on the substrate 100 side, and the hole of the tube constitutes the nozzle hole 10d. Figure 2 The nozzle orifice 10d illustrated in (b) is a hole provided in the tube of the cooling gas nozzle 10. The opening da of the nozzle orifice 10d on the substrate 100 side may be located coplanar with the end face (nozzle face) of the cooling gas nozzle 10 on the substrate 100 side. Or, as Figure 2 As shown in (b), the tube can protrude from the end face (nozzle face) of the cooling gas nozzle 10 on the substrate 100 side, and the opening da is located at the position protruding from the end face (nozzle face) of the cooling gas nozzle 10 on the substrate 100 side.

[0129] Thus, when the tube of the cooling gas nozzle 10 protrudes from the end face (nozzle face) on the substrate 100 side, the gap between the cooling gas nozzle 10 and the substrate 100 can be ensured to a certain extent, preventing water droplets adhering to the end face (nozzle face) on the substrate 100 side of the cooling gas nozzle 10 from adhering to the back side of the substrate 100 and becoming contaminated, and approaching the substrate 100 through the opening da of the nozzle hole 10d, thereby supplying low-temperature cooling gas.

[0130] Furthermore, when the nozzle surface of the cooling gas nozzle 10 is machined to form a nozzle hole 10d, there is a concern that processing residue generated in the processing portion may mix into the cooling gas 3a1 passing through the nozzle hole 10d and adhere to the substrate 100, thus becoming particulate matter. In contrast, by inserting a tube into the hole formed in the nozzle surface and supplying the cooling gas 3a1 through the hole of the tube as the nozzle hole 10d, direct contact between the processed portion of the nozzle surface and the cooling gas 3a1 can be prevented, thereby reducing the probability that particulate matter generated in the processing portion will adhere to the substrate 100 along the flow of the cooling gas 3a1.

[0131] Cooling gas 3a1 ejected from nozzle orifice 10d is supplied to the back surface 100a of substrate 100. At this time, since nozzle orifice 10d tilts away from the rotational axis 100c of substrate 100 as it approaches the substrate 100, the cooling gas 3a1 ejected from nozzle orifice 10d mainly flows on the back surface 100a of substrate 100 towards the periphery of substrate 100. Additionally, a portion of the cooling gas 3a1 that collides with the back surface 100a of substrate 100 flows on the back surface 100a of substrate 100 towards the rotational axis 100c of substrate 100. In this case, the flow rate of cooling gas 3a1 flowing towards the periphery of substrate 100 is greater than the flow rate of cooling gas 3a1 flowing towards the rotational axis 100c of substrate 100.

[0132] Here, as described above, the peripheral region of the substrate 100 receives more heat from the outside than the central region. Since the cooling gas nozzle 10 in this embodiment is provided with the nozzle orifice 10d, the amount of cooling gas 3a1 supplied to the peripheral region of the substrate 100, which receives more heat, can be greater than the amount of cooling gas 3a1 supplied to the central region of the substrate 100, which receives less heat.

[0133] Therefore, temperature deviations within the surface of the substrate 100 can be suppressed. As a result, deviations in the separation state of contaminants in each region of the substrate 100 can be suppressed during the cooling process (overcooling process + freezing process) described later, thereby improving the contaminant removal rate throughout the entire region of the substrate 100.

[0134] The number, arrangement, tilt angle θ, diameter of the nozzle holes 10d, and distance G between the opening of the nozzle holes 10d and the back surface 100a of the substrate 100 along the direction of the rotation center axis 100c of the substrate 100 can be appropriately changed according to the planar dimensions of the substrate 100. For example, if the planar dimensions of the substrate 100 are large, the number of nozzle holes 10d can be increased or the tilt angle θ can be increased. In addition, the flow rate of the cooling gas 3a1 can be adjusted by changing the diameter of the nozzle holes 10d. Furthermore, by shortening the distance G, the flow rate of the cooling gas 3a1 directly supplied to the back surface 100a of the substrate 100 can be increased.

[0135] For example, experiments or simulations can be conducted to appropriately determine the number, configuration, tilt angle θ, diameter, and distance G of the nozzle holes 10d, so as to reduce the temperature deviation within the surface of the substrate 100.

[0136] Figure 3 This is a schematic cross-sectional view illustrating a cooling gas nozzle 20 of another embodiment.

[0137] like Figure 3 As shown, the cooling gas nozzle 20 is, for example, a cylindrical shape covered at both ends by plate-like members, and has a supply port 10a, a flow path 10b, a nozzle orifice 20a (an example of a second nozzle orifice), a nozzle orifice 20b (an example of a first nozzle orifice), and a nozzle orifice 20c (an example of a first nozzle orifice). In the cooling gas nozzle 20, the flow path 10c is omitted. The nozzle orifice 20a, nozzle orifice 20b, and nozzle orifice 20c are directly provided in the flow path 10b.

[0138] For example, the nozzle orifice 20a supplies cooling gas 3a1 to the vicinity of the center of the back surface 100a of the substrate 100. The nozzle orifice 20a extends, for example, along the rotational central axis 100c of the substrate 100.

[0139] For example, nozzle orifice 20b supplies cooling gas 3a1 to the vicinity of the periphery of the back surface 100a of substrate 100. For example, nozzle orifice 20c supplies cooling gas 3a1 to the region between the vicinity of the center and the vicinity of the back surface 100a of substrate 100. In addition, like nozzle orifice 10d, nozzle orifice 20c and nozzle orifice 20b are inclined in a direction away from the rotation center axis 100c of substrate 100 as they approach the substrate 100 side.

[0140] The diameter of the opening 20A of nozzle orifice 20a can be smaller than the diameters of the openings 20B and 20C of nozzle orifice 20b and nozzle orifice 20c. If so, compared to the peripheral region where there is a lot of incoming heat from the outside and it is difficult to cool, the flow rate of cooling gas 3a1 directly supplied to the central region of the back surface 100a of substrate 100 can be reduced. Therefore, localized cooling of the central region can be suppressed, and the in-plane temperature deviation of the liquid film formed on the surface 100b of substrate 100 can be reduced. Furthermore, the diameter of opening 20B can be larger than the diameter of opening 20C. This increases the flow rate of cooling gas 3a1 supplied to the peripheral region where it is difficult to cool, further reducing the in-plane temperature deviation of the liquid film formed on the surface 100b of substrate 100.

[0141] Furthermore, the distance R1 (an example of a first distance) between the point A1 (corresponding to an example of a first point) where the extension line 20b1 of the central axis of the nozzle orifice 20b intersects the back surface 100a of the substrate 100 and the rotation center axis 100c of the substrate 100 is longer than the distance R2 (an example of a first distance) between the point A2 (corresponding to an example of a first point) where the extension line 20c1 of the central axis of the nozzle orifice 20c intersects the back surface 100a of the substrate 100 and the rotation center axis 100c of the substrate 100. Additionally, the tilt angle θ1 of the nozzle orifice 20b is greater than the tilt angle θ2 of the nozzle orifice 20c.

[0142] Additionally, at least one nozzle orifice 20a, nozzle orifice 20b, and nozzle orifice 20c may be provided. In this case, the number of nozzle orifices 20b may be the same as or more than the number of nozzle orifices 20c. The number of nozzle orifices 20c may be the same as or more than the number of nozzle orifices 20a.

[0143] Thus, in the case of multiple nozzle holes with different distances (distance R) between the point where the extension line of the central axis of the nozzle hole intersects the back surface 100a of the substrate 100 and the rotation central axis 100c of the substrate 100, if the configuration of the multiple nozzle holes is set such that the relationship between the flow conductance of the nozzle hole and the processing area is as follows, the in-plane temperature deviation of the substrate 100 can be reduced.

[0144] Furthermore, the term "flow conductance" is the reciprocal of the resistance generated when a gas flows in a specific area. In this specification, it refers to the ease of flow of gas flowing in a nozzle orifice.

[0145] In addition, when there are multiple nozzle holes with equal distance R, these nozzle holes are called "nozzle hole groups with equal distance". In contrast to these nozzle hole groups with equal distance, multiple nozzles with different distances R are called "nozzle hole groups with different distances".

[0146] Furthermore, the processing area refers to the area of ​​the back surface 100a of the substrate 100 that is cooled by the outward flow of cooling gas supplied from the cooling gas nozzle 10, which comes into contact with the back surface of the substrate.

[0147] First, the ratio of the sum of the flow conductance of all nozzle orifices equidistant from R, i.e., the flow conductance of the nozzle orifice group (an example of the flow conductance of the first nozzle orifice group), to the sum of the flow conductance of all nozzle orifices provided in the cooling gas nozzle 20 is set as "C".

[0148] For example, consider in Figure 3 In the illustrated cooling gas nozzle 20, there are multiple nozzle holes 20b with a distance R equal to that of nozzle hole 20b, and multiple nozzle holes 20c with a distance R equal to that of nozzle hole 20c. In this case, the ratio of the flow conductance of the multiple nozzle holes 20b to the sum of the flow conductances of all nozzle holes is set as "C1". Similarly, the ratio of the flow conductance of the multiple nozzle holes 20c to the sum of the flow conductances of all nozzle holes is set as "C2".

[0149] If the flow conductance of nozzle orifice 20a is set as c0, the sum of the flow conductances of multiple nozzle orifices 20b is set as c1, and the sum of the flow conductances of multiple nozzle orifices 20c is set as c2, then it can be set as "C1=c1 / (c0+c1+c2)" and "C2=c2 / (c0+c1+c2)".

[0150] Furthermore, the ratio of the processing area of ​​the equally spaced nozzle orifice group to the sum of the processing areas of all nozzle orifices provided in the cooling gas nozzle 20 is defined as "S".

[0151] The "processing area of ​​the equally spaced nozzle orifice group" is calculated based on the difference between the area of ​​the back surface 100a and the area of ​​an imaginary circle with a radius of distance R.

[0152] For example, in Figure 3 In the cooling gas nozzle 20 illustrated, the ratio of the processing area of ​​the plurality of nozzle holes 20b to the sum of the processing areas of all nozzle holes is set as "S1", and the ratio of the processing area of ​​the plurality of nozzle holes 20c to the sum of the processing areas of all nozzle holes is set as "S2".

[0153] If the processing area of ​​nozzle orifice 20a is set as s0, the processing area of ​​multiple nozzle orifices 20b is set as s1, and the processing area of ​​multiple nozzle orifices 20c is set as s2, then it can be set as "S1 = s1 / (s0 + s1 + s2)" and "S2 = s2 / (s0 + s1 + s2)". Furthermore, since the distance R of nozzle orifices 20a is zero, s0 can be set to be the same as the area of ​​the back surface 100a.

[0154] Furthermore, the distance between the point where the extension line of the nozzle hole's central axis intersects the back surface 100a of the substrate 100 and the rotation central axis 100c of the substrate 100 can be set by ensuring that the difference between the maximum and minimum values ​​obtained by "V=C / S" is less than 3.

[0155] For example, in Figure 3 In the case of the cooling gas nozzle 20 shown in the example, the distances R1 and R2 can be set such that the difference between "V1 = C1 / S1" and "V2 = C2 / S2" is 3 or less.

[0156] If this is done, the temperature difference between the substrate 100 in the region between point A1 and the periphery of the substrate 100 and the temperature difference between the substrate 100 in the region between point A2 and point A1 can be reduced. That is, the temperature deviation within the surface of the substrate 100 can be reduced.

[0157] In freeze cleaning, the cleaning power (removal rate of contaminants) is improved by repeatedly freezing and thawing. When the amount of contaminants before cleaning is NI and the amount of contaminants after cleaning is NP, the contaminant removal rate (Particle Removal Efficiency (PRE)) can be expressed by the following formula.

[0158] PRE(%)=((NI-NP) / NI)×100

[0159] If the in-plane temperature deviation of the substrate 100 increases, the in-plane deviation of the cleaning force during each freeze will also increase. As a result, more freeze cycles are required, leading to a decrease in yield. Therefore, it is desirable to reduce the in-plane temperature deviation of the substrate 100 and reduce the in-plane deviation of the cleaning force during each freeze.

[0160] As described above, by keeping the deviation of "V" below 3, the deviation of the cleaning force can be suppressed to less than 20%.

[0161] In addition, when the length of the central axis of the nozzle orifice is set as La and the cross-sectional area of ​​the nozzle orifice is set as sa, the flow conductance ca of the nozzle orifice used in the formula for calculating "V" can be obtained by the following formula.

[0162] ca=(6.28×10 8 )×sa2 / La

[0163] By using the flow conductance calculated in this way, the in-plane temperature deviation of the substrate 100 is reduced.

[0164] In addition, it is preferable to reduce the difference between the maximum value of the ratio of the sum of the flow conductance of all nozzle orifice groups at different distances R to the distance R and the minimum value of the ratio of the sum of the flow conductance of all nozzle orifice groups at different distances R to the distance R, for example, the maximum value can be less than 4 times the minimum value.

[0165] In this way, the in-plane temperature deviation of the substrate 100 is further reduced.

[0166] Figure 4 This is a schematic cross-sectional view illustrating a cooling gas nozzle 12 of another embodiment.

[0167] Figure 4 The cooling gas nozzle 12 shown omits flow path 10b, and the central axis of flow path 10c coincides with the rotation center axis 100c. This is consistent with... Figure 1 , Figure 3 The cooling gas nozzles in the embodiments shown are different.

[0168] like Figure 4 As shown, the cooling gas nozzle 12 is, for example, cylindrical and has a supply port 10a, a flow path 10c, a nozzle orifice 12a, and a nozzle orifice 12b. The supply port 10a, the flow path 10c, and the nozzle orifice 12a are interconnected. The supply port 10a, the flow path 10c, and the nozzle orifice 12b are interconnected.

[0169] The diameter of flow path 10c is approximately the same as the diameter of cooling gas supply pipe 3d. Flow path 10c is connected to supply port 10a.

[0170] Nozzle holes 12a and 12b are disposed inside the cooling gas nozzle 12 and intersect with the flow path 10c. As they approach the substrate 100, nozzle holes 12a and 12b tilt away from the rotation center axis 100c of the substrate 100. One end of each nozzle hole 12a and 12b communicates with the flow path 10c. The other ends of each nozzle hole 12a and 12b open as openings 12a1 and 12b1 on the surface (nozzle surface) of the cooling gas nozzle 12 on the substrate 100 side.

[0171] Cooling gas 3a1 is supplied from the supply port 10a connected to the cooling gas supply pipe 3d to the interior of the cooling gas nozzle 12, and is supplied to the substrate 100 through the flow path 10c from the nozzle hole 12a and the nozzle hole 12b.

[0172] The opening 12b1 of the nozzle orifice 12b can be located at a different position than the opening 12a1 of the nozzle orifice 12a. For example, when viewed from a direction perpendicular to the surface 100b of the substrate 100, the distance between the rotation center axis 100c and the opening 12b1 of the nozzle orifice 12b is different from the distance between the rotation center axis 100c and the opening 12a1 of the nozzle orifice 12a.

[0173] The flow path 10c has space above the position where the inclined nozzle holes 12a and 12b are connected. Therefore, the cooling gas nozzle 12 retains the cooling gas 3a1 supplied by the cooling gas supply pipe 3d within the space of the flow path 10c, allowing cooling gas 3a1 to be supplied to the back surface of the substrate 100 from the nozzle holes 12a and 12b. This ensures that cooling gas 3a1 at a constant pressure is supplied within the space of the flow path 10c from the nozzle holes 12a and 12b, thus achieving a stable cooling effect. Furthermore, by connecting multiple nozzle holes to a single flow path 10c, the cooling gas 3a1 retained within the common flow path 10c can be ejected from the multiple nozzle holes. This allows cooling gas 3a1 to be supplied from each of the multiple nozzle holes at approximately the same pressure. Consequently, a uniform cooling effect is obtained within the surface of the substrate 100.

[0174] In addition, similar to the nozzle hole 10d, a tube (cylindrical member) can be inserted into a hole provided on the end face (nozzle face) of the cooling gas nozzle 12 on the substrate 100 side, and the hole of the tube constitutes the nozzle hole 12a and the nozzle hole 12b.

[0175] Figure 5 This is a schematic cross-sectional view illustrating a cooling gas nozzle 13 in another embodiment.

[0176] like Figure 5 As shown, the cooling gas nozzle 13 has, for example, a supply port 10a, a flow path 10c, a nozzle orifice 12a, and a nozzle orifice 13a. Figure 5 The cooling gas nozzle 13 shown has a nozzle orifice 13a at its end on the substrate 100 side of the flow path 10c. This is consistent with... Figure 4 The cooling gas nozzle 12 is different.

[0177] The supply port 10a, flow path 10c and nozzle orifice 13a are interconnected.

[0178] The nozzle orifice 13a is disposed inside the cooling gas nozzle 13 and extends along the rotation center axis 100c of the substrate 100. One end of the nozzle orifice 13a communicates with the flow path 10c, and the other end of the nozzle orifice 13a opens at the end of the cooling gas nozzle 13 on the substrate 100 side.

[0179] Cooling gas 3a1 is supplied from the supply port 10a connected to the cooling gas supply pipe 3d to the interior of the cooling gas nozzle 13, and is supplied to the substrate 100 via the flow path 10c from the nozzle hole 12a, nozzle hole 12b, and nozzle hole 13a.

[0180] The opening 13a1 of the nozzle hole 13a faces, for example, the center of the back surface 100a of the substrate 100.

[0181] If so, cooling gas 3a1 can be directly supplied to the central region of the back surface 100a of the substrate 100. Therefore, even when the planar size of the substrate 100 is large, it is easy to cool the entire region of the back surface 100a of the substrate 100 to the same degree.

[0182] like Figure 5 As shown, the diameter of the opening 13a1 of nozzle orifice 13a can be smaller than the diameter of the opening 12a1 of nozzle orifice 12a and the diameter of the opening 12b1 of nozzle orifice 12b. If so, the flow rate of cooling gas 3a1 directly supplied to the central region of the back surface 100a of substrate 100 can be reduced compared to the peripheral region of the back surface 100a of substrate 100, which receives a large amount of external heat and is difficult to cool. Therefore, localized cooling of the central region of the back surface 100a of substrate 100 can be suppressed, and the in-plane temperature deviation of the liquid film formed on the surface 100b of substrate 100 can be reduced.

[0183] Alternatively, the center of the opening 13a1 of the nozzle hole 13a can also be located at a position offset from the rotation center axis 100c of the substrate 100.

[0184] If the opening 13a1 is arranged at a position overlapping with the rotation center axis 100c, then even if the substrate 100 rotates, the same part (central portion) of the substrate 100 will always face the opening 13a1. Therefore, the central region of the back surface 100a of the substrate 100 can be easily cooled locally.

[0185] In contrast, if the opening 13a1 is located off the rotation center axis 100c of the substrate, the portion of the back surface 100a of the substrate 100 facing the opening 13a1 will move sequentially as the substrate 100 rotates. Therefore, more uniform cooling can be achieved in the central portion and its surrounding portion near the rotation center axis 100c.

[0186] In addition, similar to the nozzle hole 10d, a tube (cylindrical member) can be inserted into a hole provided on the end face (nozzle face) of the cooling gas nozzle 13 on the substrate 100 side, and the hole of the tube constitutes the nozzle hole 13a.

[0187] Next, the function of the substrate processing apparatus 1 will be illustrated.

[0188] Figure 6This is a timing diagram used to illustrate the operation of the substrate processing apparatus 1.

[0189] also, Figure 6 This is the case where substrate 100 is a 6025 quartz (Qz) substrate (152mm×152mm×6.35mm) and liquid 101 is pure water.

[0190] First, the substrate 100 is moved into the interior of the housing 6 via a loading / unshown loading / unloading port. After being moved in, the substrate 100 is placed and supported on a plurality of support portions 2a1 of the mounting stage 2a.

[0191] After the substrate 100 is supported on the mounting stage 2a, as Figure 6 The freeze cleaning process shown includes a preparation process, a cooling process (supercooling process + freezing process), a thawing process, and a drying process.

[0192] In the preparatory process, controller 11 controls supply unit 4b and flow control unit 4c to supply a predetermined flow rate of liquid 101 to surface 100b of substrate 100. Additionally, controller 11 controls flow control unit 3c to supply a predetermined flow rate of cooling gas 3a1 to back surface 100a of substrate 100. Furthermore, controller 11 controls drive unit 2c to rotate substrate 100 at a second rotational speed.

[0193] For example, the second rotational speed is approximately 50 rpm to 500 rpm. For example, the flow rate of liquid 101 is approximately 0.1 L / min to 1 L / min. For example, the flow rate of cooling gas 3a1 is approximately 40 NL / min to 200 NL / min.

[0194] Since liquid 101 is in a pouring state, the temperature of the liquid film in the preparation process is approximately the same as the temperature of the supplied liquid 101. For example, if the temperature of the supplied liquid 101 is around room temperature (20°C), the temperature of the liquid film is also around room temperature (20°C).

[0195] Next, as Figure 6 The cooling process (supercooling process + freezing process) is performed as shown. In addition, in this embodiment, the process in the cooling process from changing the liquid 101 to a supercooled state until freezing begins is called the "supercooling process", and the process from changing the supercooled liquid 101 to a frozen state until thawing begins through the thawing process is called the "freezing process".

[0196] Here, if the cooling rate of liquid 101 is too fast, liquid 101 will freeze immediately instead of becoming supercooled. Therefore, controller 11 controls at least one of the flow rate of cooling gas 3a1 and the rotational speed of substrate 100, thereby making the liquid 101 on the surface 100b of substrate 100 supercooled.

[0197] Furthermore, as described above, the nozzle orifices 10d, 20c, and 20b are tilted away from the rotation center axis 100c of the substrate 100 as they are located on the substrate 100 side. As a result, the temperature deviation within the surface of the substrate 100 is reduced, thus allowing the entire area of ​​the liquid 101 on the surface 100b of the substrate 100 to be in a supercooled state.

[0198] In the cooling process (supercooling process + freezing process), such as Figure 6 As illustrated, after setting the first rotational speed, the supply of liquid 101 supplied during the preparation process is stopped. For example, the first rotational speed is approximately 0 rpm to 50 rpm. That is, the controller 11 rotates the substrate 100 at a speed lower than the rotational speed during the preparation process.

[0199] In the cooling process (overcooling process + freezing process), by stopping the supply of liquid 101 and setting the rotation speed of substrate 100 to a first rotation speed lower than the second rotation speed, the liquid 101 present on substrate 100 is brought to a standstill. Therefore, by continuously supplying cooling gas 3a1 to the back surface 100a of substrate 100, the temperature of the liquid film on substrate 100 is further reduced compared to the temperature of the liquid film in the preparation process, resulting in an overcooled state.

[0200] The conditions under which liquid 101 becomes supercooled are influenced by factors such as the size of substrate 100, the viscosity of liquid 101, and the specific heat of cooling gas 3a1. Therefore, the control conditions for liquid 101 to become supercooled are preferably determined appropriately through experiments or simulations.

[0201] In a supercooled state, for example, the liquid 101 may begin to freeze due to the temperature of the liquid film, the presence of contaminants such as particles or bubbles, vibration, etc.

[0202] When the supercooled liquid 101 begins to freeze, the process is transferred from the supercooling step to the freezing step. In the initial stage of the freezing step, liquid 101 and a substance formed by the freezing of liquid 101 are present on the surface 100b of the substrate 100. Then, the liquid 101 completely freezes to form a frozen film. After the frozen film is formed, the temperature of the frozen film on the substrate 100 is further reduced by continuously supplying cooling gas 3a1 to the back surface 100a of the substrate 100.

[0203] In this case, as described above, the nozzle orifice 10d, nozzle orifice 20c, and nozzle orifice 20b are tilted away from the rotation center axis 100c of the substrate 100 as they approach the substrate 100. Therefore, the temperature deviation within the surface of the substrate 100 is reduced, and the entire area of ​​the liquid film on the substrate 100 can be frozen to form a frozen film.

[0204] Next, as Figure 6The thawing process is shown. In addition... Figure 6 The example shown illustrates the case where liquid 101 and liquid 102 are the same liquid. Therefore, Figure 6 In the thawing process, liquid 101 is supplied. During the thawing process, the controller 11 controls the supply unit 4b and the flow control unit 4c to supply a predetermined flow rate of liquid 101 to the surface 100b of the substrate 100. Furthermore, if liquid 101 and liquid 102 are different, the controller 11 controls the supply unit 5b and the flow control unit 5c to supply a predetermined flow rate of liquid 102 to the surface 100b of the substrate 100.

[0205] Furthermore, the controller 11 controls the flow control unit 3c to stop the supply of cooling gas 3a1. Additionally, the controller 11 controls the drive unit 2c to increase the rotational speed of the substrate 100 to a third rotational speed. This third rotational speed is, for example, approximately 200 rpm to 700 rpm. If the rotation of the substrate 100 increases, the liquid 101 and the substance formed by freezing the liquid 101 can be ejected by centrifugal force. Therefore, the liquid 101 and the substance formed by freezing the liquid 101 can be discharged from the surface 100b of the substrate 100. At this time, contaminants separated from the surface 100b of the substrate 100 are also discharged along with the liquid 101 and the substance formed by freezing the liquid 101.

[0206] In this case, by tilting the nozzle orifice 10d, nozzle orifice 20c, and nozzle orifice 20b, a freezing film is formed over the entire area of ​​the substrate 100, thus enabling efficient and effective separation of contaminants over the entire area of ​​the substrate 100. Therefore, the removal efficiency of contaminants over the entire area of ​​the substrate 100 can be improved.

[0207] Next, as Figure 6 The drying process is shown. During the drying process, the controller 11 controls the supply unit 4b and the flow control unit 4c to stop the supply of liquid 101. Furthermore, if liquid 101 and liquid 102 are different liquids, the controller 11 controls the supply unit 5b and the flow control unit 5c to stop the supply of liquid 102.

[0208] Furthermore, the controller 11 controls the drive unit 2c to increase the rotational speed of the substrate 100 to a fourth rotational speed, which is faster than the third rotational speed. If the rotation of the substrate 100 is accelerated, the substrate 100 can be dried quickly. In addition, the fourth rotational speed of the substrate 100 is not particularly limited as long as drying can be performed.

[0209] After the freezing and cleaning process is completed, the substrate 100 is moved out of the housing 6 via a loading / unshown loading / unloading outlet of the housing 6.

[0210] As described above, the substrate 100 can be frozen and cleaned (removal of contaminants).

[0211] Next, the effect on the tilted nozzle orifice will be further explained.

[0212] Figure 7 This is a schematic cross-sectional view of the cooling gas nozzle 200 used to illustrate a comparative example.

[0213] like Figure 7 As shown, the cooling gas nozzle 200 is, for example, plate-shaped and has a supply port 10a, a flow path 10b, a nozzle orifice 20a, a nozzle orifice 220b, and a nozzle orifice 220c. The nozzle orifice 20a supplies cooling gas 3a1 to the vicinity of the center of the back surface 100a of the substrate 100. The nozzle orifice 220b supplies cooling gas 3a1 to the vicinity of the periphery of the back surface 100a of the substrate 100. The nozzle orifice 220b supplies cooling gas 3a1 at a distance R1 from the rotation center axis 100c of the substrate 100. The nozzle orifice 220c supplies cooling gas 3a1 to the region between the vicinity of the center and the vicinity of the periphery of the back surface 100a of the substrate 100. The nozzle orifice 220c supplies cooling gas 3a1 at a distance R2 from the rotation center axis 100c of the substrate 100.

[0214] Nozzle holes 220b and 220c are not tilted and extend along the rotation center axis 100c of substrate 100 in the same manner as nozzle hole 20a.

[0215] If nozzle holes 20a, 220b, and 220c are provided, cooling gas 3a1 can be supplied to a predetermined position on the back surface 100a of the substrate 100. However, since the cooling gas 3a1 is mainly supplied from a direction perpendicular to the back surface 100a of the substrate 100, the amount of cooling gas 3a1 flowing near the periphery of the substrate 100, where there is a lot of incoming heat, cannot be increased.

[0216] Furthermore, as Figure 7 As shown, near the openings of nozzle holes 20a, 220b, and 220c extending along the rotational central axis 100c of the substrate 100, cooling gas 3a1, which collides with the inner wall, is ejected in a direction intersecting the central axis of nozzle holes 20a, 220b, and 220c. Therefore, due to the dispersion of the cooling gas 3a1, it is difficult to control its flow towards the periphery of the substrate 100.

[0217] Thus, if multiple nozzle holes 20a, 220b, and 220c extending along the rotation center axis 100c of the substrate 100 are provided, even if cooling gas 3a1 can be supplied to a wide area of ​​the back surface 100a of the substrate 100, the amount of cooling gas 3a1 supplied to the peripheral region of the substrate 100, where the heat input is high, cannot be greater than the amount of cooling gas 3a1 supplied to the central region of the substrate 100, where the heat input is low. As a result, temperature deviations are easily generated within the surface of the substrate 100, raising concerns about deviations in the contaminant removal rate within the surface of the substrate 100. For example, it is difficult to improve the contaminant removal rate in the peripheral region of the substrate 100.

[0218] Figure 8 This is a graph used to illustrate the effect of the cooling gas nozzle 200 in the comparative example.

[0219] As described above, if multiple nozzle holes 20a, 220b, and 220c extending along the rotation center axis 100c of the substrate 100 are provided, the amount of cooling gas 3a1 supplied to the peripheral region of the substrate 100, which receives more heat, cannot be increased. Therefore, the temperature of the peripheral region of the substrate 100 tends to become higher than the temperature of the central region of the substrate 100.

[0220] The result, such as Figure 8 As shown, the removal rate of contaminants in the peripheral region of substrate 100 is lower than that in the central region of substrate 100.

[0221] Figure 9 This is a diagram illustrating the effect of the cooling gas nozzle 20 in this embodiment.

[0222] As described above, nozzle orifices 20c and 20b are inclined away from the rotation center axis 100c of the substrate 100 as they are located on the substrate 100 side. Therefore, cooling gas 3a1 can be supplied to a wide area of ​​the back surface 100a of the substrate 100, and the amount of cooling gas 3a1 supplied to the peripheral region of the substrate 100, where there is more heat input, can be increased. Therefore, the temperature deviation within the surface of the substrate 100 is reduced. As a result, such as Figure 9 As shown, the removal rate of contaminants can be improved in the entire area of ​​the back surface 100a of the substrate 100.

[0223] The embodiments described above have been illustrated. However, the present invention is not limited to these descriptions. Any embodiments that are created by adding, deleting, or designing structural elements, or by adding, omitting, or changing the conditions of processes, as long as they possess the features of the present invention, are also included within the scope of the present invention.

[0224] For example, the shape, size, quantity, and configuration of the various elements of the substrate processing apparatus 1 may be appropriately changed, and are not limited to the example.

Claims

1. A substrate processing apparatus, comprising: The mounting section has a mounting stage capable of mounting a substrate and is capable of rotating the mounted substrate. The cooling unit is capable of supplying cooling gas to the space between the mounting stage and the substrate via a cooling gas nozzle; as well as The liquid supply unit is capable of supplying liquid to the surface of the substrate opposite to the surface of the mounting stage. The cooling gas nozzle has at least one first nozzle orifice that is inclined toward the rotational center axis of the substrate as it approaches the substrate side.

2. The substrate processing apparatus according to claim 1, wherein, The first distance between the first point where the extension of the central axis of the first nozzle hole intersects the surface of the substrate on the stage side and the central axis of rotation of the substrate is less than or equal to the maximum value of the second distance between the periphery of the substrate and the central axis of rotation of the substrate.

3. The substrate processing apparatus according to claim 2, wherein a plurality of first nozzle holes with different first distances are provided. Compared to the first nozzle hole with a shorter distance, the angle between the extension line of the central axis of the first nozzle hole with a longer distance and the rotation center axis of the substrate is larger.

4. The substrate processing apparatus according to claim 2 or 3, wherein a plurality of first nozzle holes with different first distances and a plurality of first nozzle holes with equal first distances are provided. Let C be the ratio of the sum of the flow conductances of all the first nozzle orifices with equal first distances (i.e., the flow conductance of the first nozzle orifice group) to the sum of the flow conductances of all the first nozzle orifices in the cooling gas nozzle. When S is defined as the ratio of the area of ​​the surface on the stage side of the substrate to the area of ​​a circle with the first distance as its radius, i.e., the processing area of ​​the first nozzle orifice group, to the sum of the processing areas of all the first nozzle orifices. The difference between the maximum and minimum values ​​obtained through C / S is less than 3.

5. The substrate processing apparatus according to claim 4, wherein, When the flow conductance of the first nozzle orifice is set to ca, the length of the central axis of the first nozzle orifice is set to La, and the cross-sectional area of ​​the first nozzle orifice is set to sa, the following formula is satisfied. as=(6.28×10 8 )×sa 2 / To.

6. The substrate processing apparatus according to claim 1, wherein, The cooling unit supplies cooling gas to the cooling gas nozzle via a cooling gas supply pipe. The cooling gas nozzle has a space inside with an inner diameter larger than that of the cooling gas supply pipe. Cooling gas is supplied from the cooling gas supply pipe through the space inside the cooling gas nozzle and the first nozzle orifice.

7. The substrate processing apparatus according to claim 1, further comprising a second nozzle orifice extending along the rotation central axis, The diameter of the opening of the second nozzle orifice is smaller than the diameter of the opening of the first nozzle orifice, which tilts away from the rotation center axis as it approaches the substrate side.

8. The substrate processing apparatus according to claim 1, wherein, The first nozzle orifice is the orifice of a tube inserted into the orifice of the cooling gas nozzle.

9. The substrate processing apparatus according to claim 8, wherein, The opening of the tube protrudes from the end face of the cooling gas nozzle on the substrate side.

10. The substrate processing apparatus according to claim 1, wherein, The cooling gas nozzle has a flow path extending inside it along the rotational central axis of the substrate. The flow path is connected to a first nozzle orifice that is inclined toward the direction away from the rotation center axis as it approaches the substrate side, and has space above the position where the first nozzle orifice is connected.

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