Cooling cache assembly, wafer surface electrostatic treatment system and wafer surface electrostatic treatment method

Abstract

The invention provides a cooling cache assembly, a wafer surface electrostatic treatment system and a wafer surface electrostatic treatment method. The cooling cache assembly comprises a base, the surface of which is provided with a cooling cache area used for placing a wafer; the top plate is positioned right above the cooling buffer area; one end of the supporting piece is fixed on the base, and the other end of the supporting piece is connected to the lower surface of the top plate; the electrostatic monitoring device is fixed on the top plate, the electrostatic monitoring device monitors the electrostatic state of the surface of the wafer to obtain electrostatic monitoring data, and the electrostatic monitoring data serve as a basis for adjusting the electrostatic elimination efficiency of the ion generator.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment manufacturing, and more particularly to wafer surface electrostatic monitoring and electrostatic treatment technology for device front-end modules (EFEM). Background Technology

[0002] In the semiconductor manufacturing field, as semiconductor process nodes continue to shrink, wafers become significantly more sensitive to static electricity. Static charge accumulation can lead to problems such as device breakdown, pattern defects, or thin film inhomogeneity.

[0003] The Equipment Front-End Module (EFEM) is a critical piece of equipment in semiconductor manufacturing for wafer transport and storage. Its main function is to establish an efficient and clean transport channel between wafer processing equipment (such as thin film deposition equipment, lithography machines, and etching machines) and the wafer storage system. The EFEM typically includes a robotic arm, wafer alignment device, buffer, and environmental control system to ensure high cleanliness and precise alignment of the wafer during transport. As the first gateway in semiconductor manufacturing, the EFEM's environmental control capabilities directly impact the yield of subsequent processes, especially the extremely stringent requirements for electrostatic discharge (ESD) control. Within the EFEM, friction between the wafer and components such as the robotic arm and transport tracks easily generates static charge. The smaller the semiconductor process node (e.g., 28nm and below), the higher the wafer's sensitivity to ESD. Static charge accumulation can lead to serious problems such as device breakdown, pattern defects, or thin film inhomogeneity. Summary of the Invention

[0004] To overcome the shortcomings of the prior art, the present invention provides a cooling buffer component, a wafer surface electrostatic treatment system, and a wafer surface electrostatic treatment method.

[0005] The cooling buffer assembly provided by the present invention includes a base, a top plate, a support component, and an electrostatic monitoring device.

[0006] The surface of the base has a cooling buffer area for placing the wafer.

[0007] The top plate is located directly above the cooling buffer area.

[0008] One end of the support is fixed to the base, and the other end is connected to the lower surface of the top plate.

[0009] The electrostatic monitoring device is fixed on the top plate. The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains electrostatic monitoring data. The electrostatic monitoring data serves as the basis for adjusting the electrostatic elimination efficiency of the ion generator.

[0010] In one embodiment, the electrostatic monitoring data includes the electrostatic voltage on the wafer surface, as well as the synchronously monitored ambient temperature and humidity.

[0011] In one embodiment, the cooling cache component is located within the device front-end module.

[0012] In one embodiment, the height of the support member is adjustable, and the height of the support member satisfies both of the following requirements: It meets the monitoring accuracy requirements of the electrostatic monitoring device; Avoid interference with the movement path of the robotic arm that transports the wafer.

[0013] In one embodiment, the electrostatic monitoring device has a communication module that sends the electrostatic monitoring data to the control system of the device's front-end module.

[0014] The present invention also provides a wafer surface electrostatic treatment system, including a cooling buffer assembly and an ion generator.

[0015] The cooling cache component is located within the front-end module of the device.

[0016] The ion generator is located at the top of the front-end module of the device.

[0017] The cooling buffer assembly includes a base, a top plate, a support component, and an electrostatic monitoring device.

[0018] The surface of the base has a cooling buffer area for placing the wafer.

[0019] The top plate is located directly above the cooling buffer area.

[0020] One end of the support is fixed to the base, and the other end is connected to the lower surface of the top plate.

[0021] The electrostatic monitoring device is fixed on the top plate and monitors the electrostatic state of the wafer surface to obtain electrostatic monitoring data.

[0022] The electrostatic elimination efficiency of the ion generator is adjusted in real time based on the electrostatic monitoring data.

[0023] In one embodiment, the electrostatic monitoring data includes the electrostatic voltage on the wafer surface, as well as the synchronously monitored ambient temperature and humidity.

[0024] In one embodiment, the height of the support member is adjustable, and the height of the support member satisfies both of the following requirements: It meets the monitoring accuracy requirements of the electrostatic monitoring device; Avoid interference with the movement path of the robotic arm that transports the wafer.

[0025] In one embodiment, the electrostatic monitoring device has a communication module that sends the electrostatic monitoring data to the control system of the device's front-end module.

[0026] The present invention also provides a method for performing electrostatic treatment on a wafer surface using the wafer surface electrostatic treatment system as described above.

[0027] This method includes, but is not limited to, the following steps: a. Set up a designated electrostatic monitoring station, which is associated with the location of the cooling buffer area; b. Send the current wafer to the designated electrostatic monitoring station; c. The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains the electrostatic monitoring data; d. The electrostatic monitoring device sends the electrostatic monitoring data to the control system; e. The control system determines whether the electrostatic voltage in the electrostatic monitoring data is within a voltage threshold range. If it exceeds the voltage threshold range, step f is executed; if it does not exceed the voltage threshold range, the subsequent transfer process continues and the system waits for the arrival of the next wafer. f. The control system automatically adjusts the operating parameters of the ion generator based on the electrostatic monitoring data, thereby adjusting the electrostatic elimination efficiency; g. Repeat steps c to f until the electrostatic voltage is within the voltage threshold range.

[0028] The cooling buffer assembly, wafer surface electrostatic treatment system, and wafer surface electrostatic treatment method of the present invention have the following beneficial technical effects: First, this invention adds an electrostatic monitoring device above the cooling buffer area inside the front-end module of the equipment to monitor the electrostatic voltage of the wafer substrate and the ambient temperature and humidity, thereby providing early warning of abnormal changes in the electrostatic field on the wafer surface and the potential impact of abnormal static electricity on the product. The electrostatic monitoring device is positioned at a suitable location when the wafer enters or exits the process chamber (i.e., the cooling buffer area), and can monitor the electrostatic field state before and after the wafer process without affecting the normal wafer transport.

[0029] Secondly, based on the electrostatic voltage of the wafer substrate and the ambient temperature and humidity detected by the electrostatic monitoring device, the present invention can actively adjust the ion generator built into the front-end module of the device through pre-made algorithms and software logic, thereby improving the electrostatic elimination efficiency of the front-end module and realizing closed-loop control of the electrostatic environment inside the front-end module of the device. Attached Figure Description

[0030] The above-described invention and the following detailed description will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are merely examples of the claimed invention. In the drawings, the same reference numerals represent the same or similar elements.

[0031] Figure 1 A cooling buffer assembly according to an embodiment of the present invention is shown; Figure 2 An electrostatic monitoring device according to an embodiment of the present invention is shown; Figure 3 The parameter performance of an electrostatic monitoring device according to an embodiment of the present invention is shown; Figure 4 A flowchart of a wafer surface electrostatic treatment method according to an embodiment of the present invention is shown. Detailed Implementation

[0032] The following detailed description of the features and advantages of the present invention provides sufficient information for any person skilled in the art to understand and implement the invention. Furthermore, based on the specification, claims, and drawings disclosed herein, those skilled in the art can easily understand the related objectives and advantages of the invention. Although the description of the invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may arise based on the claims of the invention. To provide a thorough understanding of the invention, numerous specific details will be included in the following description. The invention may also be implemented without using these details. Moreover, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0033] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0034] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0035] It is understood that while terms such as "first," "second," and "third" may be used herein to describe various components, channels, assemblies, regions, layers, and / or parts, these components, channels, assemblies, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, assemblies, regions, layers, and / or parts. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0036] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0037] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0038] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0039] During wafer transfer within the Equipment Front-End Module (EFEM), static electricity accumulates due to mechanical friction, airflow, and other factors. If this static charge is not promptly eliminated, it can lead to a series of serious problems. First, electrostatic discharge (ESD) can directly damage the nanoscale circuitry on the wafer, causing device malfunction or performance degradation; this damage is often irreversible. Second, static electricity can attract particulate contaminants from the environment, which may cause patterning defects or thin-film anomalies in subsequent processes. Furthermore, static electricity can interfere with the normal operation of automated equipment, affecting the precise positioning of robotic arms and sensor readings.

[0040] The cooling buffer in the Equipment Front End Module (EFEM) is a critical functional component in semiconductor manufacturing equipment, primarily used for temperature regulation and stabilization of wafers during transport. This component is typically located inside the EFEM and integrated with the wafer transport path, ensuring the wafer reaches suitable temperature conditions before entering the process module. The cooling buffer rapidly cools the wafer from the high temperature of the previous process stage to the target temperature range through active or passive cooling mechanisms, preventing thermal stress from affecting the wafer structure or subsequent processes. The cooling buffer is a fixed station where the wafer naturally rests within the EFEM, in a static state (after placement by the robotic arm). This stable resting state provides ideal conditions for electrostatic discharge (ESD) monitoring.

[0041] Figure 1 A cooling buffer assembly according to an embodiment of the present invention is shown. The cooling buffer assembly 101 is located within the front-end module of the device.

[0042] The cooling buffer assembly 101 includes a base 1, a top plate 2, a support 3, and an electrostatic monitoring device 4.

[0043] The base 1 is used to support the wafer 5. The surface of the base 1 has a cooling buffer area for placing the wafer 5.

[0044] The wafer 5, conveyed by the robotic arm 6, is placed in the cooling buffer area on the base 1 of the cooling buffer assembly 101 for cooling. At this time, the wafer is in a static state on the base 1, providing ideal conditions for the detection work of the electrostatic detection device 4.

[0045] Top plate 2 is located directly above the cooling buffer area.

[0046] One end of the support member 3 is fixed to the base 1, and the other end is connected to the lower surface of the top plate 2 to support the top plate 2.

[0047] The electrostatic discharge (ESD) monitoring device 4 is fixed on the top plate 2 and is used to monitor the electrostatic state of the wafer surface entering the cooling buffer area, obtain ESD monitoring data, and report the data to the host computer. The ESD monitoring device 4 can detect the electrostatic voltage of the wafer substrate and the ambient temperature and humidity, thereby providing early warning of abnormal changes in the electrostatic field on the wafer surface and avoiding potential impacts on the product. This layout achieves its function without affecting the normal wafer transport and cooling process. Specifically, the ESD monitoring module is installed above the cooling buffer area because it is close to the wafer dwell position and does not affect the transport path and cooling process. Furthermore, the environmental parameters (such as temperature and humidity) at this location are strongly correlated with the electrostatic state of the wafer surface, facilitating comprehensive monitoring and analysis.

[0048] In one embodiment, the electrostatic monitoring data includes electrostatic field data, such as voltage, and may also include synchronously detected electrostatic-related environmental data, such as temperature and humidity information.

[0049] In one embodiment, the electrostatic monitoring device can detect the electrostatic field on the wafer surface when the robotic arm moves to the designated electrostatic monitoring station, and report the data to the CTC industrial control computer. Finally, based on the feedback data, it can determine whether there is a potential risk to the product and automatically adjust the electrostatic elimination efficiency of the ion generator.

[0050] In one embodiment, the height of the support 3 is adjustable. The height of the support needs to meet two conditions: first, it must be able to detect electrostatic voltage and environmental data without contact and meet the detection accuracy; second, it must avoid interference with the movement path of the robotic arm.

[0051] In one embodiment, the height of the support 3 can be adjusted such that the distance between the electrostatic monitoring device and the top of the wafer is 50 mm.

[0052] Figure 2 An electrostatic monitoring device according to an embodiment of the present invention is shown.

[0053] In one embodiment, the electrostatic monitoring device is installed at a fixed distance of 50mm directly above the wafer for non-contact monitoring, with a measurement range of... It is 100mm.

[0054] In one embodiment, the SUNJE SM-50 integrated electrostatic monitoring device can be selected based on the actual working conditions, which simultaneously meets the requirements for testing accuracy and ease of installation and commissioning.

[0055] Figure 3 The parameter performance of an electrostatic monitoring device according to an embodiment of the present invention is shown. The electrostatic monitoring device simultaneously monitors electrostatic voltage, ambient temperature, and ambient humidity.

[0056] In one embodiment, the electrostatic voltage measurement range is approximately ±2kV, with a resolution of about 1V and an accuracy of about ±2.5%.

[0057] In one embodiment, the ambient temperature measurement range is approximately 0-99°C, with a resolution of approximately 0.1°C and an accuracy of approximately ±3°C.

[0058] In one embodiment, the ambient humidity measurement range is approximately 0-99.9%, with a resolution of approximately 0.10% and an accuracy of approximately ±3%.

[0059] The present invention also provides a wafer surface electrostatic treatment system located inside the device front-end module (EFEM).

[0060] Wafer surface electrostatic treatment systems include, for example Figure 1 The cooling buffer assembly 101 and the ion generator are shown.

[0061] The ion generator is located at the top of the front-end module of the device and can be installed at a certain distance above the cooling buffer assembly.

[0062] In one embodiment, the ion generator may be integrated into the front-end module of the device.

[0063] An ion generator is a device that generates charged particles (ions) through electrical principles. This device uses an electric field or high-voltage power supply to ionize gas molecules in the air, turning them into positively or negatively charged ions, thereby improving air quality, reducing static electricity, and increasing the cleanliness of the product manufacturing environment. The ion generator in the front-end module of the device is only used to improve the wafer transport environment and cannot detect the electrostatic field on the wafer surface. Therefore, for some products that are sensitive to electrostatic fields, the ion generator works in conjunction with the electrostatic monitoring device in the cooling buffer assembly of this invention. This allows for accurate detection of static electricity on the wafer surface and real-time adjustment of the electrostatic elimination efficiency. Specifically, the electrostatic elimination efficiency of the ion generator can be automatically adjusted based on the electrostatic monitoring data detected by the electrostatic monitoring device, thus enabling precise and real-time electrostatic elimination.

[0064] The electrostatic monitoring device of the present invention, positioned above the cooling buffer area of ​​the front-end module (EFEM), has multiple advantages, mainly reflected in the following aspects: First, from a spatial layout perspective, the cooling buffer area is a fixed station where the wafer naturally rests within the front-end module of the equipment, where the wafer is stationary (after the robotic arm has placed it). This stable stationary state provides ideal conditions for inspection. The electrostatic monitoring device is installed at a predetermined distance directly above the wafer, which not only meets the accuracy requirements of non-contact inspection (e.g., ±2.5% electrostatic voltage accuracy) but also completely avoids interference with the robotic arm's movement path, and is easy to install and test. This layout design ensures that the inspection process does not affect the normal wafer transfer flow and does not introduce additional contamination risks. Moreover, the cooling buffer area is where the wafer enters and exits the process chamber. By setting up an electrostatic state monitoring point at this location, the electrostatic field state before and after the wafer process can be monitored.

[0065] Secondly, from the perspective of environmental parameter correlation, the cooling buffer area itself requires temperature regulation, and its surrounding environmental parameters (such as temperature and humidity changes caused by cooling gas flow) directly affect the electrostatic state of the wafer surface. The electrostatic detection device of this invention can simultaneously collect temperature, humidity, and electrostatic data. Through environmental-electrostatic correlation analysis (such as electrostatic accumulation caused by sudden temperature changes), it can more accurately identify the root cause of electrostatic anomalies, improving the pertinence and accuracy of early warning.

[0066] Third, from the perspective of system response efficiency, this location is usually close to the ion generator, and the detection data can be transmitted to the EFEM control system in real time via the RS-485 communication protocol, forming an efficient "monitoring-adjustment" closed loop. When the electrostatic voltage exceeds the preset threshold, the system can immediately adjust the electrostatic elimination efficiency of adjacent ion generators, significantly improving the real-time performance of electrostatic control.

[0067] Fourth, from an equipment compatibility perspective, adding an electrostatic monitoring device to the existing cooling buffer assembly does not require modification of the EFEM main structure; deployment can be completed simply by expanding the mounting bracket. This design fully preserves the original cleanliness requirements of the EFEM, ensuring that no new sources of contamination are introduced.

[0068] Finally, from the perspective of process optimization, the dwell time of the wafer in the cooling buffer area provides a stable time window for inspection. Inspection is automatically triggered when the robotic arm arrives at this station, and the data is uploaded via the EAP protocol after being bound to the wafer ID, achieving end-to-end data traceability. Compared to random inspection schemes, this fixed-station inspection method significantly improves data consistency, providing a more complete data foundation for process analysis and quality traceability.

[0069] The working process of the wafer surface electrostatic treatment system of the present invention is as follows: A designated electrostatic discharge (ESD) monitoring station is added during wafer transfer. A robotic arm transports the wafer to this station, whose coordinates correspond to the location of the cooling buffer area. Without interfering with normal wafer transfer, the ESD monitoring device monitors the electrostatic field on the wafer surface in real time at appropriate times, simultaneously monitoring ambient temperature and humidity. This data is then reported to the control system (e.g., a CTC industrial computer). Based on the feedback data, the control system determines whether there are potential risks to the product and automatically adjusts the ESD elimination efficiency of the ion generator.

[0070] This invention also provides a method for performing electrostatic treatment on a wafer surface using the wafer surface electrostatic treatment system described above. This method includes, but is not limited to, the following steps: a. Set up a designated electrostatic monitoring station, which is associated with the location of the cooling buffer area; b. Send the current wafer to the designated electrostatic monitoring station; c. The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains the electrostatic monitoring data; d. The electrostatic monitoring device sends the electrostatic monitoring data to the control system; e. The control system determines whether the electrostatic voltage in the electrostatic monitoring data is within a voltage threshold range. If it exceeds the voltage threshold range, step f is executed; if it does not exceed the voltage threshold range, the subsequent transfer process continues and the system waits for the arrival of the next wafer. f. The control system automatically adjusts the operating parameters of the ion generator based on the electrostatic monitoring data, thereby adjusting the electrostatic elimination efficiency; g. Repeat steps c to f until the electrostatic voltage is within the voltage threshold range.

[0071] Figure 4 A flowchart illustrating a wafer surface electrostatic treatment method according to an embodiment of the present invention is shown. The wafer surface electrostatic treatment method of the present invention includes, but is not limited to, the following steps.

[0072] Step 401: Set up the designated electrostatic discharge (ESD) monitoring station. The designated ESD monitoring station is associated with the location of the cooling buffer area within the EFEM. The ESD monitoring device is installed on top of the cooling buffer assembly, directly above the cooling buffer area.

[0073] Step 402: The robotic arm delivers the wafer to the designated electrostatic monitoring station.

[0074] Step 403: The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains electrostatic monitoring data.

[0075] In one embodiment, the electrostatic monitoring data includes electrostatic voltage, ambient temperature, and ambient humidity.

[0076] In one embodiment, the electrostatic monitoring data is bound to the wafer's ID.

[0077] Step 404: The electrostatic monitoring device sends the electrostatic monitoring data to the control system.

[0078] In one embodiment, the electrostatic monitoring device sends electrostatic monitoring data to the control system via serial communication (e.g., RS-485 protocol).

[0079] In one embodiment, the control system is a PC for the device's front-end module.

[0080] Step 405: The control system determines whether the electrostatic voltage in the electrostatic monitoring data is within a voltage threshold range. If it exceeds the voltage threshold range, proceed to step 408; if it does not exceed the voltage threshold range, proceed to step 406.

[0081] Step 406: The wafer continues with the subsequent transfer process.

[0082] Step 407: Wait for the next wafer to arrive.

[0083] Step 408: The control system automatically adjusts the parameters of the ion generator based on the measured electrostatic monitoring data, such as the frequency of releasing positive or negative ions or adjusting the ratio of the time for releasing positive and negative ions, thereby adjusting the electrostatic elimination efficiency.

[0084] In one embodiment, the voltage threshold range is set to (-m, +n). If the measured electrostatic voltage is less than -m, the release amount of positive ions is increased, or the release ratio of positive ions is increased; if the measured electrostatic voltage is greater than +n, the release amount of negative ions is increased, or the release ratio of negative ions is increased.

[0085] Step 409: During step 408, the electrostatic monitoring device monitors the electrostatic voltage in real time, and the control system determines whether the electrostatic voltage is within the voltage threshold range. If it exceeds the voltage threshold range, step 408 is executed; if it does not exceed the voltage threshold range, step 406 is executed.

[0086] This invention is based on the electrostatic voltage of the wafer substrate and the ambient temperature and humidity detected by the electrostatic monitoring device. Through pre-built algorithms and software logic, it can actively adjust the parameters of the ion generator built into the EFEM to improve the electrostatic elimination efficiency of the EFEM, thereby adjusting the electrostatic state of the wafer in real time and realizing closed-loop control of the electrostatic environment inside the EFEM.

[0087] Those skilled in the art will understand that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein can be implemented in hardware, software (including firmware, resident software, microcode, etc.), or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, modules, blocks, units, circuits, systems, and steps described above are generalized in their functional form. Whether such functionality is implemented in hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0088] This application uses flowcharts to illustrate the operations or steps performed by a system according to embodiments of this application. It should be understood that the preceding or following operations or steps are not necessarily performed in exact order. Instead, various operations or steps can be processed in reverse order or simultaneously. Furthermore, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.

[0089] Unless expressly stated in the claims, the order of processing elements and sequences, the use of numbers and letters, or the use of other names described in this application are not intended to limit the order of the processes and methods of this application.

[0090] Furthermore, aspects of this application may be manifested as a computer product located on one or more computer-readable media, the product including computer-readable program code.

[0091] A computer-readable signal medium may contain a propagated data signal containing computer program encoding, for example, on baseband or as part of a carrier wave. This propagated signal may take various forms, including electromagnetic, optical, and so on, or suitable combinations thereof. A computer-readable signal medium can be any computer-readable medium other than a computer-readable storage medium, which can be connected to an instruction execution system, apparatus, or device to enable communication, propagation, or transmission of a program for use. The program encoding located on the computer-readable signal medium can be propagated through any suitable medium, including radio, cable, fiber optic cable, RF, or similar media, or any combination of the above media.

[0092] The computer program code required for the operation of each part of this application can be written in any one or more programming languages, including object-oriented programming languages ​​such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python, etc., conventional procedural programming languages ​​such as C, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages ​​such as Python, Ruby, and Groovy, or other programming languages. This program code can run entirely on the user's computer, or as a standalone software package on the user's computer, or partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any network, such as a local area network (LAN) or wide area network (WAN), or connected to an external computer (e.g., via the Internet), or in a cloud computing environment, or used as a service such as Software as a Service (SaaS).

[0093] Those skilled in the art will understand that information, signals, and data can be represented using any of a variety of different techniques and skills. For example, the data, instructions, commands, information, signals, bits, symbols, and chips described throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0094] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0095] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer.

[0096] The terminology and expressions used above are for descriptive purposes only, and the invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean excluding any illustrative and descriptive equivalent features (or parts thereof), and it should be recognized that various modifications that may exist should also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be considered to cover all such equivalents.

[0097] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims.

[0098] Similarly, it should be noted that although the present invention has been described with reference to the specific embodiments described above, those skilled in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, any changes or modifications to the above embodiments within the scope of the essential spirit of the present invention will fall within the scope of the claims of this application.

Claims

1. A cooling buffer component, characterized in that, include: The base has a cooling buffer area on its surface for placing the wafer; Top plate, located directly above the cooling buffer area; A support member, one end of which is fixed to the base and the other end of which is connected to the lower surface of the top plate; An electrostatic monitoring device is fixed on the top plate. The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains electrostatic monitoring data, which serves as the basis for adjusting the electrostatic elimination efficiency of the ion generator.

2. The cooling buffer component as described in claim 1, characterized in that, The electrostatic monitoring data includes the electrostatic voltage on the wafer surface, as well as the ambient temperature and humidity monitored simultaneously.

3. The cooling buffer component as described in claim 1, characterized in that, The cooling cache component is located within the front-end module of the device.

4. The cooling buffer component as described in claim 1, characterized in that, The height of the support member is adjustable, and the height of the support member meets the following two requirements: It meets the monitoring accuracy requirements of the electrostatic monitoring device; Avoid interference with the movement path of the robotic arm that transports the wafer.

5. The cooling buffer component as described in claim 1, characterized in that, The electrostatic monitoring device has a communication module, which sends the electrostatic monitoring data to the control system of the device's front-end module.

6. A wafer surface electrostatic treatment system, characterized in that, include: Cooling cache components are located within the front-end module of the device; An ion generator is located at the top of the front-end module of the device; The cooling cache component includes: The base has a cooling buffer area on its surface for placing the wafer; Top plate, located directly above the cooling buffer area; A support member, one end of which is fixed to the base and the other end of which is connected to the lower surface of the top plate; An electrostatic monitoring device is fixed on the top plate. The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains electrostatic monitoring data. The electrostatic elimination efficiency of the ion generator is adjusted in real time based on the monitoring data.

7. The wafer surface electrostatic treatment system as described in claim 6, characterized in that, The electrostatic monitoring data includes the electrostatic voltage on the wafer surface, as well as the ambient temperature and humidity monitored simultaneously.

8. The wafer surface electrostatic treatment system as described in claim 6, characterized in that, The height of the support member is adjustable, and the height of the support member meets the following two requirements: It meets the monitoring accuracy requirements of the electrostatic monitoring device; Avoid interference with the movement path of the robotic arm that transports the wafer.

9. The wafer surface electrostatic treatment system as described in claim 6, characterized in that, The electrostatic monitoring device has a communication module, which sends the electrostatic monitoring data to the control system of the device's front-end module.

10. A method for electrostatic treatment of a wafer surface using the wafer surface electrostatic treatment system as described in any one of claims 1 to 9, characterized in that, include: a. Set up a designated electrostatic monitoring station, which is associated with the location of the cooling buffer area; b. Send the current wafer to the designated electrostatic monitoring station; c. The electrostatic monitoring device monitors the electrostatic state of the wafer surface and obtains the electrostatic monitoring data; d. The electrostatic monitoring device sends the electrostatic monitoring data to the control system; e. The control system determines whether the electrostatic voltage in the electrostatic monitoring data is within a voltage threshold range. If it exceeds the voltage threshold range, step f is executed; if it does not exceed the voltage threshold range, the subsequent transfer process continues and the system waits for the arrival of the next wafer. f. The control system automatically adjusts the operating parameters of the ion generator based on the electrostatic monitoring data, thereby adjusting the electrostatic elimination efficiency; g. Repeat steps c to f until the electrostatic voltage is within the voltage threshold range.

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