Support structure for heat treatment system

Abstract

There is provided a rapid heat treatment apparatus including: a rapid heat treatment chamber including a workpiece; a plurality of heat sources configured to heat the workpiece, the plurality of heat sources disposed on either side of the workpiece; and a rotatable support plate operable to support the workpiece during heat treatment, the rotatable support plate configured to allow at least some radiation to partially pass through the rotatable support plate, the rotatable support plate including a support structure extending from the rotatable support plate and configured to support the workpiece, and a support structure support frame configured to support the workpiece, the support structure support frame is configured to releasably secure the support structure to the rotatable support plate, the support structure support frame including a pivot configured such that a tilt momentum of the support structure in a radial direction is greater than a tilt momentum in an azimuthal direction.

Description

[0001] This application is a divisional application of Chinese application entitled “Support Structure for Heat Treatment System”, filed on February 24, 2021, with application number 202180017407.3. Technical Field

[0002] This disclosure generally relates to one or more support structures for heat treatment systems. Background Technology

[0003] As used herein, a heat treatment chamber refers to a device for heating a workpiece, such as a semiconductor wafer. Such a device may include a support plate for supporting one or more semiconductor wafers and an energy source for heating the semiconductor workpiece, such as a heating lamp, laser, or other heat source. During heat treatment, the semiconductor workpiece can be heated under controlled conditions according to a preset temperature scheme.

[0004] Many semiconductor heating processes require heating the workpiece to high temperatures so that various chemical and physical transformations can occur when the workpiece is manufactured into one or more devices. For example, during rapid thermal processing, semiconductor workpieces can be heated to temperatures of approximately 300 °C to approximately 1,200 °C by an array of lamps on a support plate, typically for less than a few minutes. In these processes, a primary objective may be to heat the workpiece as uniformly as possible. Summary of the Invention

[0005] Many aspects and advantages of the embodiments of this disclosure will be set forth in part in the description which follows, or may be learned from the description or from practice of the embodiments.

[0006] One example aspect relates to a rapid heat treatment apparatus, comprising: a rapid heat treatment chamber including a workpiece; a plurality of heat sources configured to heat the workpiece, the plurality of heat sources being disposed on any side of the workpiece; and a rotatable support plate operable to support the workpiece during heat treatment, the rotatable support plate being configured to allow at least some radial portions to pass through the rotatable support plate, the rotatable support plate including a support structure and a support structure support frame, the support structure extending from the rotatable support plate and configured to support the workpiece, the support structure support frame being configured to releasably secure the support structure to the rotatable support plate, the support structure support frame including a pivot, the pivot being configured such that the tilting momentum of the support structure in the radial direction is greater than the tilting momentum in the azimuth direction.

[0007] Other aspects relate to a support plate for supporting a workpiece in a heat treatment apparatus, the support plate comprising: a base defining a radial direction and an azimuth direction; at least one support structure extending from the base, the at least one support structure being configured to support the workpiece during heat treatment, the support structure including a first end and a second end, wherein the first end of the support structure is arranged to support the workpiece during heat treatment, wherein the flexibility of the support structure in the radial direction of the rotatable support plate is greater than the flexibility in the azimuth direction of the rotatable support plate; and a support structure support frame configured to releasably secure the support structure to the base, the support structure support frame including a pivot, the pivot being configured such that the tilting momentum of the support structure in the radial direction is greater than the tilting momentum in the azimuth direction.

[0008] Other example aspects relate to systems, methods, apparatus, and processes for thermally treating semiconductor substrates. Variations and modifications may be made to the example aspects of this disclosure.

[0009] These and other features, aspects, and advantages of the various embodiments will be better understood with reference to the following description and the appended claims. The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the relevant principles. Attached Figure Description

[0010] A detailed discussion of embodiments for those skilled in the art is set forth in the description with reference to the accompanying drawings, wherein: Figure 1 An example rapid thermal processing (RTP) apparatus according to an example embodiment of the present disclosure is described; Figure 2 An example support structure according to an example embodiment of the present disclosure is depicted; Figure 3 An example rotatable support plate according to an example embodiment of the present disclosure is depicted; Figure 4 An example notch is depicted on a rotatable support plate according to an example embodiment of the present disclosure; Figure 5 An example rotatable support plate and support structure according to an example embodiment of the present disclosure are depicted; Figure 6 An example support structure according to an example embodiment of the present disclosure is depicted; Figure 7 An example support structure according to an example embodiment of this disclosure is depicted; and Figure 8 An example support structure according to an example embodiment of the present disclosure is depicted. Detailed Implementation

[0011] Reference will now be made in detail to embodiments illustrated in the accompanying drawings, which include one or more examples thereof. Each example is provided by way of explanation of the embodiments and not as a limitation thereof. Indeed, it will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments without departing from the scope or spirit of this disclosure. For example, features shown or described as part of one embodiment may be used with another embodiment to produce yet another embodiment. Therefore, various aspects of this disclosure are intended to cover such modifications and variations.

[0012] An exemplary aspect of this disclosure relates to a support structure for use in a heat treatment system for heating a workpiece, such as a semiconductor workpiece, an optoelectronic workpiece, a flat panel display, or other suitable workpiece. The workpiece material may include, for example, silicon, silicon-germanium, glass, plastic, or other suitable materials. In some embodiments, the workpiece may be a semiconductor wafer. The support structure can be used to support the workpiece in various heat treatment systems implementing various workpiece manufacturing processes, including but not limited to vacuum annealing, rapid heat treatment, etc.

[0013] The heat treatment chamber may include a heat source configured to emit light ranging from the ultraviolet to the near-infrared electromagnetic spectrum. To expose one or both sides of the workpiece to the heat source, the workpiece is supported by one or more support pins mounted on a carrier structure, typically a base beneath the workpiece. The support pins and the base form a support plate. In some configurations, the base is made of a highly transparent, homogeneous material (e.g., quartz glass) to avoid blocking light from the heat source. The workpiece may be supported by pins made of quartz glass. However, during thermal cycling, these pins can cause mechanical damage to the back side of the workpiece, such as scratches, indentations, build-ups, and surface particles. Subsequent workpiece processing may be negatively affected by this mechanical damage. For example, back side damage and particles are known sources of focusing problems during subsequent photolithography processes.

[0014] Most workpiece backside damage is likely caused by relative movement between the pin tip and the workpiece backside during thermal cycling. For example, during thermal cycling, when a workpiece is placed on a pin support, it undergoes thermal expansion and contraction, which causes movement on the workpiece. Quartz pin supports are typically rigidly attached to a support plate. Therefore, mechanical damage can occur on the workpiece backside as it moves against the rigid pin support.

[0015] Other attempts to reduce damage to the back of the workpiece primarily address damage caused by contact forces. Examples include increasing the contact area, changing the pin tip shape, or reducing impact stress during workpiece loading by spring-loading the pin in the vertical direction. However, these solutions do not prevent scratches from forming on the back of the workpiece.

[0016] Typically, circular marks are formed when a cold workpiece is placed on a support pin. These marks are caused by the high contact pressure applied by the precision tip. However, after heat treatment, the pin marks are now radially oriented scratches. This indicates that the scratches are related to the thermal expansion of the silicon workpiece, rather than to the acceleration or deceleration of the workpiece's rotation. The latter would result in azimuthally oriented scratches. The length of the scratches closely matches the estimated thermal expansion from the properties of silicon and the distance between the pin and the workpiece center. Therefore, the rigid pin tip acts on the back of the workpiece during the thermal expansion of the workpiece upon heating and the thermal contraction of the workpiece upon cooling, resulting in scratches.

[0017] According to an example aspect of this disclosure, the support structure may include a rotatable support plate. The support plate may include a base defining a radial direction and an azimuth direction, and at least one support structure (e.g., a support pin) extending from the base. The support structure is more flexible in the radial direction of the base than in the azimuth direction of the base.

[0018] Thus, the exemplary aspects of this disclosure can provide numerous technical effects and benefits. For example, the support structure(s) provided herein (e.g., pins) can be mounted such that it yields to the thermal expansion of the workpiece while possessing sufficient rigidity to allow the workpiece to rotate. During heat treatment, thermal expansion acts only in the radial direction, while rotational forces act in the azimuth direction. The support structure(s) provided herein is movable, allowing it to yield to thermal expansion and contraction while transferring rotational momentum to the workpiece.

[0019] Therefore, workpiece support structures, such as pins, are provided that are more flexible in the radial direction than in the azimuth direction. Furthermore, the support structures provided herein are capable of self-movement and "recovery," preventing scratches on the back of the workpiece from occurring due to shrinkage during cooling. Also advantageously, the support structures provided herein can be made of quartz glass. The contact area between the support structures and the workpiece is minimized to reduce heat conduction. The overall lateral dimension of the support structures (one or more) is also minimized to avoid shading on the workpiece.

[0020] Variations and modifications may be made to these exemplary embodiments of the present disclosure. As used in the specification, the singular forms “a,” “and,” and “the” include plural references unless the context clearly specifies otherwise. The use of “first,” “second,” “third,” etc., is as an identifier and does not necessarily indicate any order, implication, or other manner. For purposes of illustration and discussion, exemplary aspects may be discussed with reference to “substrate,” “wafer,” or “workpiece.” Those skilled in the art using the disclosure provided herein will understand that exemplary aspects of this disclosure can be used with any suitable workpiece. The term “about” used with numerical values ​​means within 20% of the specified value.

[0021] An example embodiment provides a heat treatment apparatus including: a plurality of heat sources configured to heat a workpiece; a rotatable support plate operable to support the workpiece during heat treatment, the rotatable support plate defining a radial direction and an azimuth direction; and a support structure extending from the rotatable support plate. The support structure is configured to contact the workpiece during heat treatment. The support structure also has a greater flexibility in the radial direction of the rotatable support plate than the flexibility in the azimuth direction.

[0022] An example embodiment provides a support plate for supporting a workpiece in a heat treatment apparatus. The support plate includes a base defining a radial direction and an azimuth direction, and at least one support structure extending from the base. The support structure is configured to support the workpiece during heat treatment. The support structure has greater flexibility in the radial direction of the base than in the azimuth direction of the base. The support structure may include one or more support pins, such as three support pins. In some embodiments, the support structure includes a keyed end configured to secure the support structure to the base. In some embodiments, the support structure includes a pivot and a counterweight, and the base includes one or more recesses configured to engage the pivot of the support structure to secure the support structure to the base. Furthermore, in other embodiments, the base includes a support structure support frame configured to releasably secure the support structure to the base. The support structure support frame may be configured such that the tilting momentum of the support structure in the radial direction is greater than its tilting momentum in the azimuth direction.

[0023] Exemplary embodiments of this disclosure will now be discussed in detail with reference to the accompanying drawings. Figure 1 An example Rapid Thermal Processing (RTP) system 100 according to an exemplary embodiment of the present disclosure is depicted. As shown, the RTP system 100 includes an RTP chamber 105, which includes a top 101 and a bottom 102, windows 106, 108, a workpiece 110, a rotatable support plate 120, heat sources 130, 140 (e.g., heating lamps), infrared emitters 150, 152, 154, pyrometers 165, 166, 167, 168, a controller 175, a sidewall / door 180, and a gas flow controller 185.

[0024] The workpiece 110 to be processed is supported in an RTP chamber 105 (e.g., a quartz RTP chamber) by a rotatable support plate 120. The rotatable support plate 120 may be a workpiece support operable to support the workpiece 110 during heat treatment. The workpiece 110 may be or include any suitable workpiece, such as a semiconductor wafer, like a silicon wafer. In some embodiments, the workpiece 110 may be or include a lightly doped silicon wafer. For example, a lightly doped silicon wafer may be doped such that the resistivity of the silicon wafer is greater than about 0.1 Ωcm, such as greater than about 1 Ωcm.

[0025] The rotatable support plate 120 can be or includes any suitable support structure configured to support workpiece 110, such as workpiece 110 configured to support within RTP chamber 105. In some embodiments, the rotatable support plate 120 can be configured to support multiple workpieces 110 for simultaneous heat treatment by a heat treatment system. In some embodiments, the rotatable support plate 120 can rotate the workpiece 110 before, during, and / or after heat treatment. In some embodiments, the rotatable support plate 120 can be permeable and / or, in addition, configured to allow at least some electromagnetic radiation to pass through at least partially. For example, in some embodiments, the material of the rotatable support plate 120 can be selected to allow desired electromagnetic radiation to pass through the rotatable support plate 120, such as electromagnetic radiation emitted by workpiece 110 and / or emitters 150, 152, 154. In some embodiments, the rotatable support plate 120 can be or includes a quartz material, such as hydroxyl-free quartz.

[0026] The rotatable support plate 120 may include at least one support structure, such as a support pin 115 extending from the rotatable support plate 120. In some embodiments, the rotatable support plate 120 may be spaced apart from the top plate 116. In some embodiments, the support pin 115 and / or the rotatable support plate 120 may transfer heat from the heat source 140 and / or absorb heat from the workpiece 110. In some embodiments, the support pin 115, the protective ring 109, and the top plate 116 may be made of quartz.

[0027] The protective ring 109 can be used to reduce edge effects of radiation from one or more edges of the workpiece 110. The sidewall / door 180 allows the workpiece 110 to enter and, when closed, allows the chamber 105 to be sealed, thus enabling heat treatment of the workpiece 110. For example, process gases can be introduced into the RTP chamber 105. Two sets of heat sources 130, 140 (e.g., lamps or other suitable heat sources) operable to heat the workpiece 110 in the RTP chamber 105 are displayed on either side of the workpiece 110. As described more specifically below, windows 106, 108 can be configured to block at least a portion of the radiation emitted by the heat sources 130, 140.

[0028] RTP system 100 may include heat sources 130, 140. In some embodiments, heat sources 130, 140 may include one or more heating lamps. For example, heat sources 130, 140 including one or more heating lamps may emit electromagnetic radiation (e.g., broadband electromagnetic radiation) to heat workpiece 110. In some embodiments, for example, heat sources 130, 140 may be or include arc lamps, halogen tungsten lamps, and / or any other suitable heating lamps, and / or combinations thereof. In some embodiments, directional elements (not depicted) such as, for example, reflectors (e.g., mirrors) may be configured to direct electromagnetic radiation from heat sources 130, 140 into RTP chamber 105.

[0029] According to an exemplary aspect of this disclosure, windows 106, 108 may be disposed between workpiece 110 and heat sources 130, 140. Windows 106, 108 may be configured to selectively block at least a portion of electromagnetic radiation (e.g., broadband radiation) emitted by heat sources 130, 140 from entering a portion of the rapid heat treatment chamber 105. For example, windows 106, 108 may include an opaque region 160 and / or a transmissive region 161. As used herein, "opaque" means having a transmittance of substantially less than about 0.4 (40%) for a given wavelength, and "transmissive" means having a transmittance of substantially greater than about 0.4 (40%) for a given wavelength.

[0030] The opaque region 160 and / or the transparent region 161 can be positioned such that the opaque region 160 blocks stray radiation of certain wavelengths from heat sources 130, 140, and the transparent region 161 allows, for example, transmitters 150, 152, 154 and / or pyrometers 165, 166, 167, 168 to freely interact with radiation of wavelengths blocked by the opaque region 160 in the RTP chamber 105. Thus, windows 106, 108 can effectively shield the RTP chamber 105 from contamination by heat sources 130, 140 of a given wavelength, while still allowing the heat sources 130, 140 to heat the workpiece 110. For a specific wavelength, the opaque region 160 and the transparent region 161 can generally be defined as opaque and transparent, respectively; that is, at least for electromagnetic radiation at a specific wavelength, the opaque region 160 is opaque, while the transparent region 161 is transparent.

[0031] The chamber windows 106, 108, including the opaque region 160 and / or the permeable region 161, can be formed of any suitable material and / or construction. In some embodiments, the chamber windows 106, 108 may be or include quartz material. Furthermore, in some embodiments, the opaque region 160 may be or include hydroxyl (OH)-containing quartz, such as hydroxyl-doped quartz (e.g., quartz doped with hydroxyl), and / or the permeable region 161 may be or include hydroxyl-free quartz (e.g., quartz undoped with hydroxyl). The advantages of hydroxyl-doped and hydroxyl-free quartz can include ease of fabrication. For example, during hydroxyl doping of a monolithic quartz window, the hydroxyl-free quartz region can be shielded to create hydroxyl-doped regions (e.g., opaque regions) and hydroxyl-free regions (e.g., permeable regions) within the monolithic window. Additionally, according to this disclosure, hydroxyl-doped quartz can exhibit desired wavelength blocking properties. For example, hydroxyl-doped silica can block radiation with a wavelength of about 2.7 micrometers, which corresponds to the measurement wavelengths at which some sensors (e.g., pyrometers 165, 166, 167, 168) operate in the heat treatment system 100, while hydroxyl-free silica can transmit radiation with a wavelength of about 2.7 micrometers. Therefore, the hydroxyl-doped silica region can shield the sensors (e.g., pyrometers 165, 166, 167, 168) from stray radiation (e.g., from heat sources 130, 140) in the rapid heat treatment chamber 105, and the hydroxyl-free silica region can be at least partially positioned within the sensor's field of view to allow the sensor to obtain measurements within the heat treatment system. Additionally, hydroxyl-doped silica can be partially opaque (e.g., having a transmittance of about 0.6 or 60%) to radiation with a wavelength of about 2.3 micrometers, which can at least partially reduce contamination from stray radiation (e.g., from heat sources 130, 140) in the rapid heat treatment system 100.

[0032] Gas controller 185 can control the airflow through RTP system 100, which may include inert gases that do not react with workpiece 110 and / or reactive gases such as oxygen or nitrogen that react with the material of workpiece 110 (e.g., semiconductor wafers, etc.) to form a layer on workpiece 110. In some embodiments, an electric current may flow through the atmosphere in RTP system 100 to generate ions that react with or at the surface of workpiece 110, and additional energy may be applied to the surface by bombarding the surface with high-energy ions.

[0033] Controller 175 controls various components within the RTP chamber to guide the heat treatment of workpiece 110. For example, controller 175 may be used to control heat sources 130 and 140. Additionally and / or optionally, controller 175 may be used to control a gas flow controller 185, a gate 180, and / or a temperature measurement system, including, for example, transmitters 150, 152, 154, and / or pyrometers 165, 166, 167, 168. Controller 175 may be configured to measure the temperature of the workpiece.

[0034] As used herein, a controller, control system, or the like may include one or more processors and one or more storage devices. One or more processors may be configured to execute computer-readable instructions stored in one or more storage devices to perform operations, such as any operations for controlling the heat treatment system described herein.

[0035] For the purposes of explanation and discussion, Figure 1 An example heat treatment system 100 is depicted. Those skilled in the art will understand using the disclosure provided herein that various aspects of this disclosure can be used with other heat treatment systems for workpieces without departing from the scope of this disclosure.

[0036] Figure 2 An example support structure, such as a pin, for a workpiece is depicted. As shown, the support structure 200 has a first end 202 and a second end 204. The first end 202 is arranged such that it can support the workpiece during heat treatment. In some embodiments, the first end 202 is a tapered end and the second end 204 is a blunt end. The support structure 200 also includes a substrate 206. The substrate 206 is sized and shaped such that it can engage with one or more openings present in a rotatable support plate to secure the support structure 200 to the rotatable support plate. The substrate 206 can include any shape, i.e., rectangular, oval, circular, triangular, etc., as long as the shape of the substrate 206 is complementary to the openings present in the rotatable support plate. For example, in an embodiment where the substrate 206 is rectangular, the rotatable support plate includes rectangular openings or recesses of similar size and shape for receiving the substrate 206 and securing the substrate 206 to the rotatable support plate. The support structure 200 also includes a keyed end 208. The keyed end 208 is configured to secure the support structure 200 to the rotatable support plate. The keyed end 208 is rotatable to lock the support structure 200 in place within the rotatable support plate. The mechanical dimensions of the locking and keying arrangement of the keyed end 208 ensure unimpeded radial movement of the support structure 200. In some embodiments, the support structure has a length of about 10 mm to about 20 mm, such as about 17 mm. In some embodiments, the support structure has a diameter of about 1.0 mm to about 2 mm, such as about 1.5 mm.

[0037] Figure 3 A rotatable support plate 120 with one or more openings 300 is shown, the openings 300 being configured to engage a base plate 206 of a support structure 200. Figure 3 As shown, the rotatable support plate can move in the radial and / or azimuth directions. One or more openings 300 may include pockets or holes configured to engage the base plate 206 of the support structure 200 and secure the support structure 200 to the rotatable support plate 120. In some embodiments, one or more openings 300 are oriented on the rotatable support plate 120 such that the tilt momentum of the support structure 200 in the radial direction is greater than its tilt momentum in the azimuth direction. For example, in some embodiments where one or more openings 300 are essentially rectangular, the shorter side of the rectangle is oriented in the radial direction (e.g., ...). Figure 3 As shown), the longer side of the rectangle is oriented along the orientation direction (as shown). Figure 3 (As shown). This orientation ensures that the tilting moment in the radial direction is less than the tilting moment in the azimuth direction. Therefore, the support structure 200 oriented in this way in the rotatable support plate 120 is more rigid in the azimuth direction and more movable or flexible in the radial direction.

[0038] One or more openings 300 may include various shapes, such as rectangular, oval or elliptical, circular, rhomboid, etc., as long as one or more openings 300 are complementary in shape to the substrate 206 of the support structure 200. Figure 4 An example opening 300 is provided, which is generally circular or oval in shape. Furthermore, the opening 300 is configured such that the keyed end 208 of the support structure 200 can be fitted through the opening 300, while a portion of the substrate remains within the opening 300. Therefore, when the support structure 200 is inserted into the opening 300, the top surface of the substrate 206 can be flush with the surface of the rotatable support plate 120 (e.g., ...). Figure 5 (As shown). In some embodiments, the top surface of the substrate 206 may extend above the top surface of the rotatable support plate 120. The support structure 200 must be configured such that it remains in place and cannot be easily pulled out of the rotatable support plate 120. Therefore, in some embodiments, when the support structure 200 is inserted into the opening 300, the key-shaped end 208 of the support structure 200 extends below the bottom surface of the rotatable support plate 120. The key-shaped end 208 can then be rotated, for example, by a quarter turn, to lock the support structure 200 in place on the rotatable support plate 120 (see...). Figure 5 Therefore, in some embodiments, the support structure 200 includes a keyed end 208 configured to secure the support structure 200 to the rotatable support plate 120.

[0039] Figure 6Another example embodiment of the support structure 600 is shown. In this embodiment, the support structure 600 includes a pivot 602 and has one end configured as a counterweight 604. The support structure 600 also includes a first end 606 designed to engage and support a workpiece during processing. In some embodiments, the pivot 602 includes a pin 608 configured to be removably secured to the support structure 200. For example, in some embodiments, the pin 608 can be inserted into an opening positioned along the axis of the support structure 200. In this way, the support structure 600 can pivot about an axis to which it is secured. The rotatable support plate 120 may also include one or more recesses or openings configured to engage the pivot 602 of the support structure 600. In this way, the support structure 600 can be secured to the rotatable support plate 120 (see...). Figure 7 In some embodiments, the rotatable support plate 120 includes a bearing support 620 configured to receive the axis of the pivot 602. In some embodiments, the bearing support 620 is configured to receive a pin 608 of the support structure 600. The bearing support 620 may be machined into the rotatable support plate 120. One end of the support structure 600 is formed into a counterweight 604. When the support structure 600 is configured as the rotatable support plate 120, the counterweight 604 extends below the bottom surface of the rotatable support plate 120. The counterweight 604 provides the necessary righting momentum to ensure that the support structure 600 has greater flexibility in the radial direction of the rotatable support plate 120 than in the azimuth direction of the rotatable support plate 120.

[0040] Figure 8 An example support structure 800 including a support frame 802 is provided. In this embodiment, the support structure 800 includes a movable pin 804 having a first end 806 configured to support a workpiece and a second end 808 configured to engage the support frame 802. The support frame 802 is configured to releasably secure the pin 804 to a rotatable support plate 120. The support frame 802 generally includes two portions: a first portion extending from the rotatable support plate 120 and configured to securely engage the shaft of the pin 804; and a second portion being a pivoting lower portion having a pivot 810. The pivot 810 may include an axis 812 attached to the support frame 802 and a groove 814 machined into the rotatable support plate 120, which serves as a bearing support. In this way, pin 804 can be inserted into support frame 802 of support structure, and support frame 802 of support structure can provide the necessary momentum transfer to ensure that support structure 800 is more flexible in the radial direction of rotatable support plate 120 than in the azimuth direction of rotatable support plate 120.

[0041] Although the subject matter has been described in detail with respect to specific example embodiments thereof, it should be understood that those skilled in the art, upon gaining an understanding of the foregoing, can readily produce changes, variations, and equivalents to these embodiments. Therefore, the scope of this disclosure is exemplary and not restrictive, and this disclosure does not exclude the inclusion of such modifications, variations, and / or additions to the subject matter, which will be apparent to those skilled in the art.

Claims

1. A rapid heat treatment apparatus, comprising: A rapid heat treatment chamber, the rapid heat treatment chamber including a workpiece; Multiple heat sources are configured to heat the workpiece, and the multiple heat sources are disposed on any side of the workpiece; as well as A rotatable support plate operable to support the workpiece during heat treatment, the rotatable support plate being configured to allow at least some radial portions to pass through the rotatable support plate, the rotatable support plate including a support structure and a support structure support frame, the support structure extending from the rotatable support plate and configured to support the workpiece, the support structure support frame being configured to releasably secure the support structure to the rotatable support plate, the support structure support frame including a pivot, the pivot being configured such that the tilt momentum of the support structure in the radial direction is greater than the tilt momentum in the azimuth direction.

2. The rapid heat treatment apparatus according to claim 1, further comprising: Multiple windows are disposed between the workpiece and the heat source, the multiple windows including one or more opaque areas.

3. The rapid heat treatment apparatus according to claim 1, wherein, The support structure includes a first end and a second end, wherein the first end of the support structure is arranged to support the workpiece during heat treatment, and wherein the flexibility of the support structure in the radial direction of the rotatable support plate is greater than its flexibility in the azimuth direction of the rotatable support plate.

4. The heat treatment apparatus according to claim 1, wherein, The device includes multiple support structures, each of which includes a support pin.

5. The heat treatment apparatus according to claim 1, wherein, The support structure includes a substrate, and the rotatable support plate includes one or more openings configured to engage the substrate to secure the support structure to the rotatable support plate.

6. The heat treatment apparatus according to claim 5, wherein, The one or more openings are oriented on the substrate such that the tilt momentum of the support structure in the radial direction is greater than the tilt momentum in the azimuth direction.

7. The heat treatment apparatus according to claim 5, wherein, The support structure includes a keyed end configured to secure the support structure to the rotatable support plate.

8. The heat treatment apparatus according to claim 1, wherein, The support structure includes a counterweight.

9. The heat treatment apparatus according to claim 8, wherein, The pivot includes a pin, wherein the pin is configured to be inserted into an opening in the support structure.

10. The heat treatment apparatus according to claim 9, wherein, The rotatable support plate includes one or more recesses configured to engage the pivot of the support structure to secure the support structure to the rotatable support plate.

11. A support plate for supporting a workpiece in a heat treatment apparatus, the support plate comprising: The base defines the radial and azimuth directions; At least one support structure extending from the base, the at least one support structure being configured to support the workpiece during heat treatment, the support structure including a first end and a second end, wherein the first end of the support structure is arranged to support the workpiece during heat treatment, and wherein the flexibility of the support structure in the radial direction of the rotatable support plate is greater than the flexibility in the azimuth direction of the rotatable support plate; and A support structure support frame is configured to releasably secure the support structure to the base, the support structure support frame including a pivot configured such that the tilt momentum of the support structure in the radial direction is greater than the tilt momentum in the azimuth direction.

12. The support plate according to claim 11, wherein, The at least one support structure includes three support pins.

13. The support plate according to claim 12, wherein, The at least one support structure includes a keyed end configured to secure the at least one support structure to the base.

14. The support plate according to claim 11, wherein, The at least one support structure includes a counterweight.

15. The support plate according to claim 11, wherein, The base includes one or more recesses configured to engage the pivot of the at least one support structure to secure the support structure to the base.

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